OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH INSULATING LAYER AND METHOD FOR MANUFACTURING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Abstract

Optoelectronic semiconductor device (10) comprising: a first semiconductor layer (110) of a first conductivity type; a second semiconductor layer (120) of a second conductivity type, wherein the first and the second semiconductor layers (110, 120) are stacked on top of each other to form a semiconductor layer stack; a first contact layer (130) which is in direct contact with the first semiconductor layer (110) and is electrically conductive; a first insulating layer (125) which is formed over the first and the second semiconductor layers (110, 120); and a second current expansion structure (135) which is electrically connected to the second semiconductor layer (120), wherein a maximum lateral extent of the second semiconductor layer (120) is greater than the maximum lateral extent of the first semiconductor layer (110).such that a step structure is formed and the first insulating layer (125) is formed as a conformal layer over the step structure of the first and second semiconductor layers and is directly adjacent to the first and second semiconductor layers (110, 120), respectively, and the optoelectronic semiconductor device further comprises a second insulating layer (127) between a horizontal surface of the first contact layer (130) and the second current expansion structure (135), wherein the second insulating layer (127) is arranged directly adjacent to the entire surface of the first contact layer (130) and the thickness of the second insulating layer (127) is less than the minimum thickness of the first insulating layer (125) over the step structure.