Semiconductor device

Abstract

A semiconductor device according to one aspect of the present invention comprises: a semiconductor unit in which a heat spreader, a semiconductor chip arranged on a surface of the heat spreader, and an electrode terminal electrically connected to the semiconductor chip are sealed with resin, the semiconductor unit having a lower surface on which a further surface of the heat spreader is exposed from the sealing resin, the electrode terminal projecting from at least one of a side surface and a top surface; an insulating surface body arranged on the lower surface of the semiconductor unit;and a heat sink with a recess in which the lower surface of the semiconductor unit is received, the depth of the recess being greater than the thickness of the insulating body, the lower surface of the recess and the lower surface of the semiconductor unit being connected to each other via the insulating body so that the semiconductor unit is held in the recess. Consequently, it is possible to specify a semiconductor device in which a reduction in heat dissipation properties is suppressed, while displacement and separation of connecting elements of a semiconductor unit, an insulating body, and a heat sink are prevented.

Description

Technical area

[0001] The present invention relates to a semiconductor device. State of the art

[0002] For example, in semiconductor devices, a semiconductor device used for power conversion is used in the power control of a wide variety of devices, such as industrial devices, household appliances, information terminals, automobiles, and trains. A specific example is an inverter for converting DC power to AC power.

[0003] Particularly for a semiconductor device operating at high current and voltage, it is necessary to ensure high insulation properties and effective dissipation of heat generated during operation. Furthermore, some devices may be used in harsh environmental conditions such as high temperature, low temperature, low pressure, and vibration, and therefore, connection stability between components is necessary to maintain stable reliability even under such harsh environmental conditions. For example, in Patent Document 1, a part of a heat sink is embedded in a semiconductor package, preventing displacement and separation between the semiconductor package, an insulating sheet, and the heat sink. BibliographyPatent document

[0004] Patent Document 1: Japanese Patent Application Laid-Open No. JP 2013-115167 A Summary of the inventionProblem to be solved by the invention

[0005] However, in the conventional configuration shown in Patent Document 1, since the heat sink and the insulating sheet are covered by the semiconductor device, the contact area between the heat sink and a cooling medium is limited, resulting in a problem that the heat dissipation properties are reduced.

[0006] The present invention has been conceived to solve the above problem, and the object of the present invention is to suppress a reduction in heat dissipation characteristics while preventing displacement and separation between a semiconductor unit, an insulating sheet, and a heat sink by covering the semiconductor unit and the insulating sheet with the heat sink. Ways to solve the problem

[0007] A semiconductor device according to one aspect of the present invention comprises: a semiconductor unit in which a heat spreader, a semiconductor chip disposed on a surface of the heat spreader, and an electrode terminal electrically connected to the semiconductor chip are sealed with resin, the semiconductor unit having a lower surface on which another surface of the heat spreader is exposed from the sealing resin, the electrode terminal protruding from at least one of a side surface and a top surface; an insulating sheet disposed on the lower surface of the semiconductor unit;and a heat sink having a recess in which the lower surface of the semiconductor unit is received, the depth of the recess being greater than the thickness of the insulating sheet, the lower surface of the recess and the lower surface of the semiconductor unit being connected to each other via the insulating sheet so that the semiconductor unit is held in the recess; Effect of the invention

[0008] According to the present invention, it is possible to suppress a reduction in heat dissipation characteristics while preventing displacement and separation of the connecting elements of the semiconductor unit, the insulating sheet and the heat sink by covering the semiconductor unit and the insulating sheet with the heat sink. Short description of the drawings Fig. 1 is a plan view of a semiconductor device 100 according to Embodiment 1. Fig. 2 is a sectional view taken along line AA of the semiconductor device 100 according to Embodiment 1, in a case where a wire bonding structure is used. Fig. 3 is a sectional view taken along line AA of the semiconductor device 100 according to Embodiment 1 in a case where a direct lead bonding structure is used. Fig. 4 is a plan view showing an example in which a plurality of semiconductor units 110 are mounted on a heat sink 8 in the semiconductor device 100 according to Embodiment 1. Fig. 5 is a plan view of a semiconductor device 200 according to Embodiment 2. Fig. 6 is a sectional view taken along line BB of the semiconductor device 200 according to Embodiment 2. Fig. 7 is a sectional view taken along line CC of the semiconductor device 200 according to Embodiment 2. Fig. 8 is a sectional view taken along line AA of a semiconductor device 300 according to Embodiment 3. Fig. 9 is a bottom view of a semiconductor unit 310 of the semiconductor device 300 according to Embodiment 3. Fig. 10 is a bottom view of a semiconductor unit 310 of the semiconductor device 300 according to a modification of Embodiment 3. Fig. 11 is a plan view of a semiconductor device 400 according to Embodiment 4. Fig. 12 is a sectional view taken along line DD of the semiconductor device 400 according to Embodiment 4. Fig. 13 is a plan view of the semiconductor device 400 according to a modification of Embodiment 4. Fig. 14 is a sectional view taken along line EE of the semiconductor device 400 according to the modification of Embodiment 4. Description of embodiments

[0009] Hereinafter, a semiconductor device according to embodiments of the present invention will be described with reference to the drawings. Components having the same or corresponding functions may be denoted by the same reference numerals, and repeated descriptions thereof may be omitted. Embodiment 1

[0010] Fig. 1 is a plan view of a semiconductor device 100 according to Embodiment 1, and Fig. 2 is a sectional view along the line AA in Fig. 1, in the semiconductor device according to Embodiment 1 in a case where a wire bonding structure is used. Fig. 3 is a sectional view along the line AA in Fig. 1, in the semiconductor device according to Embodiment 1 in a case where a direct lead bonding structure is used. Fig. 4 is a plan view showing a modification in which a plurality of semiconductor units are arranged on a heat sink 8 in the semiconductor device according to Embodiment 1.

[0011] As in Fig. 1, a semiconductor unit 110 is located on the heat sink 8, and it has a first electrode terminal 2 on one side of the semiconductor unit 110 and a second electrode terminal 3 on the other side. As shown in Fig. As shown in Figure 2, a recess in which a lower surface of the semiconductor unit 110 is received and joined is formed on one surface of the heat sink 8, and the semiconductor unit 110 is joined to a lower surface of the recess via an insulating sheet 7. Further, the semiconductor unit 110 is held by a side wall of the recess formed in the heat sink 8.

[0012] The semiconductor unit 110 includes a heat spreader 4, a semiconductor chip 1 disposed on a surface of the heat spreader 4, the first electrode terminal 2 electrically connected to the semiconductor chip 1 via a wire 5, and the second electrode terminal 3 electrically connected to the semiconductor chip 1 via the heat spreader 4; and is sealed with sealing resin 6. Another surface of the heat spreader 4 is the surface of the semiconductor unit 110, which is connected to the heat sink 8 via the insulating sheet 7, and is exposed to the outside of the semiconductor unit 110.

[0013] The recess of the heat sink 8 only needs to be designed such that the lower surface of the semiconductor unit 110 is received in the recess and the semiconductor unit 110 is held by at least a portion of the side wall of the recess. Therefore, it is sufficient for the base area of ​​the recess to be at least larger than the surface area of ​​the semiconductor unit 110 connected via the insulating sheet 7.

[0014] Furthermore, since the semiconductor unit 110 is held by at least a part of the side wall of the recess, it is sufficient that the thickness of the insulating sheet 7 is smaller than the height of the side wall of the recess.

[0015] Here, the semiconductor chip 1 comprises one or a plurality of elements for controlling large currents, such as an insulated gate transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), or a diode. Fig. 2 shows only one semiconductor chip 1, but a plurality of semiconductor chips may also be mounted. Silicon (Si) may be used as the material of the semiconductor chip 1. Alternatively, a wide bandgap semiconductor material, such as silicon carbide (SiC), gallium nitride (GaN), or diamond (C), may be used.

[0016] In a case where a wide bandgap semiconductor is used for the semiconductor chip 1, compared to the case where Si is used as the material of the semiconductor chip 1, power losses can be reduced, and therefore, the power consumption of the semiconductor device 100 can be reduced. Furthermore, in the case where a wide bandgap semiconductor is used for the semiconductor chip 1, compared to the case where Si is used as the material of the semiconductor chip 1, the heat resistance is higher, and operation can be performed at a higher temperature, and therefore, the thermal design tolerance is expanded, so that the size of the semiconductor device 100 can be reduced.

[0017] The first electrode terminal 2 and the second electrode terminal 3 are components that provide electrical connection between locations inside and outside the semiconductor device 100. As the materials of the first electrode terminal 2 and the second electrode terminal 3, a metal with high electrical conductivity is preferably used, and copper, for example, is preferably used. Examples of materials other than copper for the first electrode terminal 2 and the second electrode terminal 3 include aluminum, iron, and an alloy of these.

[0018] In Fig. 2, the first electrode terminal and the second electrode terminal protrude outward from the side surfaces of the semiconductor unit 110. However, each terminal may protrude outward from an upper surface of the semiconductor unit 110. That is, the first electrode terminal and the second electrode terminal may protrude from at least one of the side surface and the upper surface of the semiconductor unit 110.

[0019] Here, a semiconductor device is shown having one electrode terminal as each of the first electrode terminal and the second electrode terminal, but a plurality of electrode terminals may be provided as each of the first electrode terminal and the second electrode terminal. Depending on the specifications of the semiconductor device, another electrode terminal may be used in addition to the first electrode terminal and the second electrode terminal.

[0020] The heat spreader 4 is a component for dissipating heat generated by the operation of the semiconductor chip 1 to the outside of the semiconductor unit 110. In Fig. 2, the shape of the heat spreader 4 is, for example, a rectangular parallelepiped shape. However, the shape of the heat spreader 4 is not limited to this, and it may also be another shape, such as a trapezoidal shape, a semi-cylindrical shape, or a columnar shape. As the material of the heat spreader 4, it is preferable to use a metal with high thermal conductivity, and, for example, copper is preferably used. As the material of the heat spreader 4, examples other than copper include aluminum, iron, and an alloy of these.

[0021] The wire 5 is a component that electrically connects the semiconductor chip 1 and the first electrode terminal 2, and is preferably formed of a metal that is easily processed and has high electrical conductivity, such as gold, copper, or aluminum. The wire 5 may be connected as a signal line for controlling the power of the semiconductor chip 1, and in this case, the wire 5 serves to transmit a control signal from a location outside the semiconductor unit 110 to the semiconductor chip 1. As shown in Fig. 3, the semiconductor chip 1 and the first electrode terminal 2 may be directly bonded to each other, so that the wire 5 may be omitted.

[0022] The sealing resin 6 is an insulating sealant that seals the heat spreader 4, the semiconductor chip 1, the wire 5, the first electrode terminal 2, and the second electrode terminal 3, thus forming the semiconductor unit 110. An electric field is particularly high near the outer periphery of the semiconductor chip 1, and therefore the entire semiconductor chip 1 must be covered. The material of the sealing resin 6 can be a resin with high insulating properties, such as epoxy, polyimide, polyamide, or polyamide-imide, or a mixture obtained by adding silicon dioxide, alumina, aluminum nitride, boron nitride, or the like to a resin with high insulating properties, such as epoxy, polyimide, polyamide, or polyamide-imide.

[0023] The same function can be obtained by using a material that has a relative permittivity of 20 or less and a volume resistivity of 10 10 ohm-cm or greater in the operating temperature range of the semiconductor device. It is necessary that, during molding, the sealing resin 6 does not contain any factor such as a void that impairs the insulating properties, and that it does not separate from an enclosed object due to an external factor such as vibration or heat. Therefore, the sealing resin 6 is preferably molded by transfer molding using a mold.

[0024] The insulating sheet 7 is a component for isolating the heat spreader 4 and the heat sink 8 from each other and for dissipating heat from the heat spreader 4 to the heat sink 8. In order to prevent displacement and separation between the semiconductor unit 110 and the heat sink 8, the insulating sheet 7 is inserted between the semiconductor unit 110 and the heat sink 8 in a semi-cured state and then pressed and heated to harden it.

[0025] The material of the insulating sheet 7 is a resin with high insulating properties, such as epoxy, polyimide, polyamide, or polyamide-imide, or a mixture obtained by adding silicon dioxide, aluminum oxide, aluminum nitride, boron nitride, or the like to a resin with high insulating properties, such as epoxy, polyimide, polyamide, or polyamide-imide. As a material of the insulating sheet 7, silicone rubber, urethane rubber, or a thermosetting elastomer that has a lower elastic modulus than resin, such as epoxy, polyimide, polyamide, or polyamide-imide, can be used. In this case, the insulating sheet 7 has elasticity and can absorb vibrations, thus advantageously achieving high vibration resistance.

[0026] The insulating sheet 7 preferably has an increased thickness to improve insulating properties, or it preferably has a reduced thickness to improve heat dissipation properties. For example, to ensure the insulating properties and heat dissipation properties, the insulating sheet 7 preferably has a thickness of 20 μm to 500 μm in a case where a resin with high insulating properties is used, such as epoxy, polyimide, polyamide, polyamide-imide, silicone rubber, urethane rubber, or thermosetting elastomer, or it preferably has a thickness of not greater than about 2 mm in a case where a mixture containing a large amount of ceramic filler with high heat dissipation properties is used.

[0027] The heat sink 8 is a component that serves to dissipate heat from the semiconductor device 100. In the present invention, the semiconductor unit 110 is connected to the lower surface of the recess provided on the heat sink 8 via the insulating sheet 7, so that it serves to hold the semiconductor unit 110 via the side wall of the recess. A metal with high thermal conductivity is preferably used as the material of the heat sink 8, and copper, for example, is preferably used.

[0028] As the material of the heat sink 8, examples other than copper include aluminum, iron, and an alloy of these. Although not shown, heat dissipation fins may be connected to the heat sink 8 as a structure with a large surface area for performing effective heat exchange. In this case, the heat of the semiconductor device can be dissipated more effectively, and if the heat sink 8 is integrated with heat dissipation fins, even more effective heat dissipation can be performed.

[0029] Fig. 4 is a plan view showing an example in which a plurality of semiconductor units 110 are mounted on a heat sink 8 in the semiconductor device 100 according to Embodiment 1. Also, in the case where a plurality of semiconductor units are mounted on a heat sink 8 as shown in Fig. 4, the same effects can be achieved as described above.

[0030] The semiconductor device configured as described above includes: a semiconductor unit in which a heat spreader, a semiconductor chip disposed on a surface of the heat spreader, a first electrode terminal electrically connected to the semiconductor chip, and a second electrode terminal electrically connected to the semiconductor chip are sealed with resin, the semiconductor unit having a lower surface where another surface of the heat spreader is exposed from the sealing resin, the first electrode terminal and the second electrode terminal protruding from at least one of a side surface and an upper surface of the semiconductor unit; an insulating sheet disposed on the lower surface of the semiconductor unit and covering at least the surface where the other surface of the heat spreader is exposed;and a heat sink having a recess in which the lower surface of the semiconductor unit is received, the depth of the recess being greater than the thickness of the insulating sheet, the lower surface of the recess and the lower surface of the semiconductor unit being connected to each other via the insulating sheet so that the semiconductor unit is held in the recess.;

[0031] Since the semiconductor unit is connected to the recess formed in the heat sink via the insulating sheet, the heat sink is connected without being covered by the semiconductor unit. Furthermore, since the semiconductor unit is held by the sidewall of the recess, displacement and separation of the connecting elements of the semiconductor unit, the insulating sheet, and the heat sink are prevented.

[0032] In a case where the semiconductor device includes the semiconductor unit of which at least one of the first electrode terminal or the second electrode terminal protrudes from a side surface, the depth of the recess of the heat sink is set to be larger than the thickness of the insulating sheet and smaller than the minimum length from the bottom surface of the semiconductor unit to the positions where the first electrode terminal and the second electrode terminal protrude, so that the same function can be obtained.

[0033] Consequently, the configuration of the semiconductor device described in Embodiment 1 can provide a semiconductor device in which a reduction in heat dissipation characteristics is suppressed while preventing displacement and separation of connecting elements of a semiconductor unit, an insulating sheet, and a heat sink. Embodiment 2

[0034] Fig. 5 is a plan view of a semiconductor device 200 according to Embodiment 2. Fig. 6 shows a sectional view along the line BB in Fig. 5, and Fig. 7 shows a sectional view along the line CC in Fig. 5. As in Fig. 5, the semiconductor device 200 comprises a semiconductor unit 210 having a first electrode terminal 2, a second electrode terminal 3 and a third electrode terminal 10. As shown in Fig. 6 and Fig. 7, a recess in which a lower surface of the semiconductor unit 210 is received and connected is formed on a surface of the heat sink 8, and the semiconductor unit 210 is connected and received in the recess of the heat sink 8 via the insulating sheet 7.

[0035] As in Fig. As shown in Figure 6, the semiconductor unit 210 includes a heat spreader 4 and a heat spreader 11, and the heat spreader 4 and the heat spreader 11 are electrically connected via a bridge 12. A semiconductor chip 1 is disposed on the heat spreader 4, and the semiconductor chip 1 and the first electrode terminal 2 are electrically connected via a wire 5. A semiconductor chip 9 is disposed on the heat spreader 11, and the semiconductor chip 9 and the third electrode terminal 10 are electrically connected via a wire 5. The heat spreader 11 and the second electrode terminal 3 are electrically connected via a wire 5. The semiconductor chip 1 and the semiconductor chip 9 can be operated at different timings.

[0036] Here, the bridge 12 is a component that connects the heat spreader 4 and the heat spreader 11. A metal with high electrical conductivity is preferably used as the material of the bridge 12, and copper, for example, is preferably used. Examples of materials other than copper for the bridge 12 include aluminum, iron, and an alloy of these. A wire 5 can be used instead of the bridge 12.

[0037] Although a configuration with two semiconductor chips that can be operated at different timings is shown in Embodiment 2, a configuration with three or more semiconductor chips may also be used.

[0038] In the semiconductor device configured as described above, since the semiconductor unit is connected to the recess formed in the heat sink via the insulating sheet, in which the lower surface of the semiconductor unit is received and connected, the heat sink is connected without being covered by the semiconductor unit. Furthermore, since the semiconductor unit is held by the side wall of the recess in the present embodiment, displacement and separation of connecting elements of the semiconductor unit, the insulating sheet, and the heat sink are prevented.

[0039] Further, in the semiconductor device according to the present embodiment, for example, where a potential when the semiconductor chip 1 is driven is denoted by HV, power control can be performed at the three levels of 0, HV, and 2HV, and by using a configuration with two or more semiconductor chips, power control can be performed at three or more levels.

[0040] Therefore, the configuration of the semiconductor device described in Embodiment 2 can provide a semiconductor device that can perform power control at three or more levels, in addition to the same effects as in Embodiment 1. Embodiment 3

[0041] Fig. Fig. 8 is a sectional view of a semiconductor device 300 according to Embodiment 3 taken along the same line as line AA in Fig. 1. A plan view of the semiconductor device in Embodiment 3 is the same as in Fig. 1. Fig. 9 is a bottom view of a semiconductor unit 310 of the semiconductor device according to Embodiment 3. Fig. 10 is a bottom view of a semiconductor unit 320 of the semiconductor device 300 according to a modification of Embodiment 3, which can achieve the same effects as Embodiment 3.

[0042] As in Fig. As shown in Figure 8, the semiconductor unit 310 has a protrusion 13 formed by the sealing resin 6 on the plane including the surface of the heat spreader 4 in contact with the insulating sheet 7, and projecting toward the lower surface of the recess from the plane including the surface of the heat spreader 4 in contact with the insulating sheet 7. The protrusion 13 is continuously formed with a constant height smaller than the thickness of the insulating sheet 7.

[0043] Therefore, the protrusion 13 is directly in contact with the lower surface of the recess, and not via the insulating sheet 7, the other surface of the heat spreader 4 is connected to the lower surface of the recess via the insulating sheet 7, and the thickness of the insulating sheet 7 is defined by the height of the protrusion 13.

[0044] As in Fig. As shown in Figure 9, the protrusion 13 is formed continuously in the vicinity of the outer periphery of the lower surface of the semiconductor unit 310. The protrusion 13 may have any shape as long as—when the semiconductor unit 310 is placed on a flat surface with the protrusion 13 facing downward—the semiconductor unit 310 stands stable, and the thickness of the insulating sheet 7 is defined by the height of the protrusion 13. For example, in a modification shown in Fig. 10, columnar projections 13 having the same height may be arranged at four corners of the lower surface of the semiconductor unit 310 opposite to the lower surface of the recess.

[0045] In the semiconductor device configured as described above, since the semiconductor unit is connected to the recess formed in the heat sink via the insulating sheet, the heat sink is connected without being covered by the semiconductor unit. Furthermore, since the semiconductor unit is held by the side wall of the recess, displacement and separation of connecting elements of the semiconductor unit, the insulating sheet, and the heat sink are prevented.

[0046] Further, in the present embodiment, the semiconductor unit has a protrusion continuously formed with a constant height or a plurality of protrusions having equal heights, wherein the protrusion or the plurality of protrusions are formed by the sealing resin on the plane including the surface of the heat spreader in contact with the insulating sheet and protrude toward the lower surface of the recess from the plane including the surface of the heat spreader in contact with the insulating sheet.

[0047] The height of the protrusion or the plurality of protrusions is smaller than the thickness of the insulating sheet before the semiconductor device, the insulating sheet and the heat spreader are joined, and the protrusion or the plurality of protrusions are not in contact with the lower surface of the recess via the insulating sheet.

[0048] The other surface of the heat spreader presses the insulating sheet, and the other surface of the heat spreader is connected to the lower surface of the recess via the insulating sheet. With this configuration, in the semiconductor device according to the present embodiment, the distance between the other surface of the heat spreader and the lower surface of the recess is defined by the protrusion, and fluctuation in the thickness of the insulating sheet that occurs when the semiconductor unit, the insulating sheet, and the heat sink are connected is suppressed. Consequently, tilting of the connection plane between the semiconductor unit and the heat sink is suppressed.

[0049] Consequently, the configurations of the semiconductor device described in Embodiment 3 and its modification can provide a semiconductor device in which tilting of a connection plane between a semiconductor unit and a heat sink is suppressed, so that stability in manufacturing is improved, in addition to the same effects as in Embodiment 1. Embodiment 4

[0050] Fig. 11 shows a plan view of a semiconductor device 400 according to Embodiment 4, and Fig. 12 shows a sectional view along the line DD in Fig. 11. As in Fig. 11 and Fig. 12, the semiconductor device 400 in Embodiment 4 is configured such that an insulating block 14 is disposed between the first electrode terminal 2 and the heat sink 8 and between the second electrode terminal 3 and the heat sink 8 in the semiconductor device 100 of Embodiment 1.

[0051] Preferably, the insulating block 14 is arranged without gaps at least between the first electrode terminal 2 and the heat sink 8 and between the second electrode terminal 3 and the heat sink 8, and is formed in contact with a semiconductor unit 410, the first electrode terminal 2 and the second electrode terminal 3. As shown in the plan view in Fig. 11, the insulating block 14 is formed in a larger area than the area formed by the first electrode terminal 2 and the second electrode terminal 3, so that the creepage distances between the first electrode terminal 2 and the heat sink 8 and between the second electrode terminal 3 and the heat sink 8 can be extended by the insulating block 14.

[0052] As the material of the insulating block 14, a resin with high insulating properties is preferably used, and a resin such as epoxy, polyimide, polyamide, or polyamide-imide, or a mixture obtained by adding silicon dioxide, aluminum oxide, aluminum nitride, boron nitride, or the like to a resin with high insulating properties, such as epoxy, polyimide, polyamide, or polyamide-imide, is used. Here, the same effects are obtained as long as the material of the insulating block 14 has a relative permittivity of 20 or less and a volume resistivity of 10 10 Ω·cm in the operating temperature range of the semiconductor device.

[0053] Fig. 13 shows a plan view of the semiconductor device 400 according to a modification of Embodiment 4, and Fig. 14 shows a sectional view along the line EE in Fig. 13. As in Fig. 13, also in the modification of Embodiment 4, insulating blocks 14 without gaps are arranged at least between the first electrode terminal 2 and the heat sink 8 and between the second electrode terminal 3 and the heat sink 8.

[0054] The difference to embodiment 4 is that - as in Fig. 14 - the insulating block 14 between the first electrode terminal 2 and the heat sink 8 and the insulating block 14 between the second electrode terminal 3 and the heat sink 8 each have, at least on a surface forming a creepage path, a groove which is recessed parallel to the connecting plane between the heat sink 8 and the insulating block 14.

[0055] Since the insulating block 14 between the first electrode terminal 2 and the heat sink 8 and the insulating block 14 between the second electrode terminal 3 and the heat sink 8 each have a groove recessed parallel to the connection plane between the heat sink 8 and the insulating block 14 at least on a surface forming a creepage path, the creepage distance between the first electrode terminal 2 and the heat sink 8 and the creepage distance between the second electrode terminal 3 and the heat sink 8 are lengthened compared to the case without grooves.

[0056] Although the example in which the insulating blocks 14 have grooves is shown in the modification of Embodiment 4, it is sufficient that the creepage distance between the first electrode terminal 2 and the heat sink 8 and the creepage distance between the second electrode terminal 3 and the heat sink 8 are extended, and therefore, the grooves formed in the insulating blocks 14 may also be replaced by ribs parallel to the joint plane between the heat sink 8 and the insulating block 14, or a groove and a rib may be used in combination.

[0057] In the semiconductor device configured as described above, since the semiconductor unit is connected to the recess formed in the heat sink via the insulating sheet, the heat sink is connected without being covered by the semiconductor unit. Furthermore, since the semiconductor unit is held by the side wall of the recess, displacement and separation of connecting elements of the semiconductor unit, the insulating sheet, and the heat sink are prevented.

[0058] Furthermore, the semiconductor device according to the present embodiment includes the insulating block disposed in the gap through which the heat sink and at least a part of the first electrode terminal protruding from the semiconductor unit oppose each other, and in the gap through which the heat sink and at least a part of the second electrode terminal protruding from the semiconductor unit oppose each other. Thus, the insulating block is in contact with the semiconductor unit and fills the gap between the first electrode terminal and the heat sink and the gap between the second electrode terminal and the heat sink.

[0059] Therefore, while preventing displacement between the semiconductor device and the heat sink, the spatial distance between the heat sink and each of the first electrode terminal and the second electrode terminal can be secured, and the external creepage distance therebetween can be extended. Furthermore, in the semiconductor device according to the present embodiment, the insulating block may have a groove machined or a rib projecting at least on each of the surfaces forming creepage paths between the first electrode terminal and the heat sink and between the second electrode terminal and the heat sink, respectively, parallel to the junction plane between the heat sink and the insulating block. Consequently, compared with the case where no grooves or ribs are provided, the creepage distances from the first electrode terminal and the second electrode terminal to the heat sink can be further extended.

[0060] Consequently, the semiconductor device described in Embodiment 4 and its modification can provide a semiconductor device in which displacement between a semiconductor unit and a heat sink is further prevented and insulation properties between the heat sink and each of a first electrode terminal and a second electrode terminal are further improved, in addition to the same effects as in Embodiment 1. List of reference symbols 1 semiconductor chip 2 first electrode connection 3 second electrode connection 4 heat distributors 5 wire 6 Sealing resin 7 Insulating surface bodies 8 heat sinks 9 semiconductor chip 10 third electrode connection 11 heat distributors 12 Bridge 13 lead 14 Insulation block 100 semiconductor devices 110 semiconductor unit 200 semiconductor devices 210 semiconductor unit 300 semiconductor devices 310 semiconductor unit 320 semiconductor units 400 semiconductor device 410 semiconductor unit QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] JP 2013-115 167 A

[0004]

Claims

[1] Semiconductor device comprising: - a semiconductor unit in which a heat spreader, a semiconductor chip arranged on a surface of the heat spreader, and an electrode terminal electrically connected to the semiconductor chip are sealed with resin, the semiconductor unit having a lower surface on which another surface of the heat spreader is exposed from the sealing resin, the electrode terminal protruding from at least one of a side surface and a top surface; - an insulating sheet disposed on the lower surface of the semiconductor unit; and - a heat sink having a recess in which the lower surface of the semiconductor unit is received, the depth of the recess being greater than the thickness of the insulating sheet, the lower surface of the recess and the lower surface of the semiconductor unit being connected to one another via the insulating sheet so that the semiconductor unit is held in the recess. [2] A semiconductor device according to claim 1, comprising two or more electrode terminals as the electrode terminal. [3] A semiconductor device according to claim 1 or 2, wherein at least one electrode terminal protrudes from at least one side surface of the semiconductor unit, and the depth of the recess is smaller than a minimum length from the electrode terminal protruding from the side surface to the lower surface of the semiconductor unit. [4] A semiconductor device according to claim 3, further comprising an insulating block disposed in a space through which the electrode terminal projecting from the side surface and the heat sink are opposed to each other. [5] The semiconductor device according to claim 4, wherein the insulating block has, on at least one surface forming a creepage path between the heat sink and the electrode terminal projecting from the side surface, a groove or a rib recessed or projecting parallel to a connecting plane between the heat sink and the insulating block. [6] A semiconductor device according to any one of claims 1 to 5, wherein the semiconductor unit has a projection formed continuously with a constant height or a plurality of projections having equal heights, the projection or the plurality of projections being formed by the sealing resin on the plane including a surface of the heat spreader in contact with the insulating sheet and projecting toward the lower surface of the recess from the plane including the surface of the heat spreader in contact with the insulating sheet, wherein the height of the projection or the plurality of projections is smaller than the thickness of the insulating sheet before the semiconductor unit, the insulating sheet and the heat spreader are connected, and the projection or the plurality of projections are not in contact with the lower surface of the recess via the insulating sheet, and the other surface of the heat spreader presses against the insulating sheet, and the other surface of the heat spreader is connected to the lower surface of the recess via the insulating sheet. [7] A semiconductor device according to any one of claims 1 to 6, wherein the insulating sheet comprises silicone rubber, urethane rubber or a thermosetting elastomer.

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