ADJUSTABLE PHASE SHIFTER, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE

Abstract

The present disclosure provides an adjustable phase shifter, a method for manufacturing the same, and an electronic device, the adjustable phase shifter comprising: a first substrate and a second substrate arranged opposite one another; an adjustable dielectric layer arranged between the first substrate and the second substrate; a first electrode located on a side of the first substrate facing the adjustable dielectric layer; a second electrode located on a side of the second substrate facing the adjustable dielectric layer, wherein an adjustable capacitor is formed in an overlap region of the first electrode and the second electrode; wherein, along a direction away from the first substrate, the cross-sectional area of ​​the first electrode shows a decreasing trend parallel to a plane in which the first substrate is located;and along a direction away from the second substrate, the cross-sectional area of ​​the second electrode parallel to a plane in which the second substrate is located shows a decreasing trend;

Description

TECHNICAL FIELDThe present disclosure relates to the field of communication technology, and more particularly to an adjustable phase shifter, a method of manufacturing the same, and an electronic device.TECHNOLOGICAL BACKGROUNDThanks to the advancement of new materials, new processes and algorithms, phase shifters have gradually shown and are widely used unique advantages such as compact structure, low cost and reconfiguration. In liquid crystal phase shifters, liquid crystal capacitance may be periodically introduced to adjust the dielectric constant of the liquid crystal layer by controlling the orientation of the liquid crystal, thereby adjusting the total capacitance of the arm per unit length, thereby achieving the phase shift effect. The improvement of the phase shift performance of the phase shifter has become an urgent technical problem to be solved.DISCLOSURE OF THE INVENTIONThe present disclosure provides an adjustable phase shifter, a method of manufacturing the same, and an electronic device. The specific solutions are as follows:An embodiment of the present disclosure provides an adjustable phase shifter comprising:a first substrate and a second substrate disposed opposite to each other;an adjustable dielectric layer disposed between the first substrate and the second substrate;a first electrode located on a side of the first substrate facing the adjustable dielectric layer;a second electrode disposed on a side of the second substrate facing the adjustable dielectric layer, wherein an adjustable capacitor is formed in an overlap region of the first electrode and the second electrode;wherein, along a direction away from the first substrate, the cross-sectional area of the first electrode parallel to a plane in which the first substrate is located exhibits a decreasing trend; and along a direction away from the second substrate, the cross-sectional area of the second electrode parallel to a plane in which the second substrate is located exhibits a decreasing trend.Optionally, in the embodiment of the present disclosure, the cross-sectional shapes of the first electrode and the second electrode along a corresponding thickness direction are each trapezoidal, and the length of a lower edge of the corresponding cross-sectional shape in contact with the corresponding substrate is greater than the length of an upper edge.Optionally, in the embodiment of the present disclosure, the angles between the two side edges and the lower edge of the cross-sectional shape of at least one of the first electrode and the second electrode are equal angles along the corresponding thickness direction.Optionally, in the embodiment of the present disclosure, the range of the angles is (0°, 90°).Optionally, in the embodiment of the present disclosure, the side edges of the cross-sectional shape of the first electrode and the second electrode are arc-shaped along the corresponding thickness direction, and the arc shape is recessed in a direction near the center position of the corresponding cross-sectional shape.Optionally, in the embodiment of the present disclosure, the first electrode and the second electrode are arranged with chamfered corners between respective side edges and upper edges of the cross-sectional shapes along respective thickness directions.Optionally, in the embodiment of the present disclosure, the capacitance value of the adjustable capacitor is: wherein C 1 represents the capacitance value of the adjustable capacitor, ε 0 represents the vacuum dielectric constant, ε r represents the relative dielectric constant, L represents the extension length of the first electrode and the second electrode, L 1 represents the length of the upper edge of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction, L 2' represents the length of the lower edge of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction, D 1 represents the distance between the two upper edges of the cross-sectional shapes of the first electrode and the second electrode along the corresponding thickness direction in the overlapping region, and D 2 represents the distance between the two lower edges of the cross-sectional shapes of the first electrode and the second electrode along the corresponding thickness direction in the overlapping region.Optionally, in the embodiment of the present disclosure, the first electrode includes a first signal electrode and a second signal electrode that are discontinuously arranged, and the second electrode includes a first patch electrode attached to a side of the second substrate facing the adjustable dielectric layer, wherein the orthographic projection of the first signal electrode on the first substrate and the orthographic projection of the second signal electrode on the first substrate each at least partially overlap with the orthographic projection of the first patch electrode on the first substrate to form the adjustable capacitor.Optionally, in the embodiment of the present disclosure, the first electrode includes a first body portion extending along a first direction and a plurality of first branch portions connected to the first body portion and extending along a second direction intersecting with the first direction, and the second electrode includes a second body portion extending along the first direction and a plurality of second branch portions connected to the second body portion and extending along the second direction, the first branch portions respectively at least partially overlapping with the corresponding second branch portions to form the variable capacitor.Optionally, in the embodiment of the present disclosure, the first electrode includes a plurality of first ground electrodes arranged discontinuously, each of the first ground electrodes is coupled to a second ground electrode arranged on a side of the first substrate opposite the adjustable dielectric layer via a through hole passing through the thickness direction of the first substrate, and the orthographic projection of each of the first ground electrodes on the first substrate falls entirely within the range of the orthographic projection of the second ground electrode on the first substrate, and the orthographic projection of each of the first ground electrodes on the first substrate overlaps at least partly with the orthographic projection of the first patch electrode on the first substrate to form the adjustable capacitor.Optionally, in the embodiment of the present disclosure, the first electrode includes a plurality of third ground electrodes arranged discontinuously and a third signal electrode located between two adjacent third ground electrodes, and the second electrode includes a plurality of second patch electrodes arranged discontinuously, wherein the orthographic projections of each of the third ground electrodes and the third signal electrode on the first substrate respectively at least partially overlap with the orthographic projection of the corresponding second patch electrode on the first substrate to form the adjustable capacitor.Optionally, in the embodiment of the present disclosure, the first electrode includes a fourth ground electrode and a fourth signal electrode, the fourth ground electrode includes a first ground electrode and a second ground electrode spaced apart from each other, the fourth signal electrode is located between the first ground electrode and the second ground electrode, and the second electrode includes a plurality of third patch electrodes spaced apart from each other; the fourth signal electrode includes a third body portion extending along a third direction and a plurality of third branch portions connected to the third body portion and extending along a fourth direction intersecting with the third direction; wherein the first ground electrode comprises a fourth body portion extending along the third direction and a plurality of fourth branch portions connected to the fourth body portion and extending along the fourth direction; wherein the second ground electrode comprises a fifth body portion extending along the third direction and a plurality of fifth branch portions connected to the fifth body portion and extending along the fourth direction; wherein the orthographic projection of each of the third patch electrodes on the first substrate at least partially overlaps with the orthographic projections of the corresponding third branch portions, fourth branch portions, and fifth branch portions, respectively, on the first substrate to form the adjustable capacitor.Optionally, in the embodiment of the present disclosure, the first electrode includes a plurality of fifth ground electrodes spaced apart from each other and a fifth signal electrode located between two adjacent fifth ground electrodes, and the second electrode includes a fourth patch electrode attached to a tunable dielectric layer-facing side of the second substrate, wherein the orthographic projections of each of the fifth ground electrodes and the fifth signal electrode on the first substrate respectively at least partially overlap with the orthographic projection of the fourth patch electrode on the first substrate to form the tunable capacitor.Accordingly, an embodiment of the present disclosure provides an electronic device comprising:an adjustable phase shifter according to any one of the above-described, a radiation antenna, a power division network and a feed network arranged in an array.Accordingly, an embodiment of the present disclosure provides a method of manufacturing an adjustable phase shifter according to any of the above-described, comprising:forming a pattern of the first electrode on a side of the first substrate and forming a pattern of the second electrode on a side of the second substrate using a plating process;forming the adjustable dielectric layer between the first substrate and the second substrate, so that the adjustable capacitor is formed in the overlap region of the first electrode and the second electrode.Optionally, in the embodiment of the present disclosure, forming a pattern of the first electrode on a side of the first substrate using a plating process includes:depositing an entire first seed layer on a side of the first substrate;forming an entire first metal film layer on a side of the first seed layer facing away from the first substrate using a electroplating process;etching the first seed layer and the first metal film layer using a patterning process to form the pattern of the first electrode.Optionally, in the embodiment of the present disclosure, forming a pattern of the second electrode on a side of the second substrate using a plating process includes:depositing an entire second seed layer on a side of the second substrate;forming an entire second metal film layer on a side of the second seed layer facing away from the second substrate using a electroplating process;etching the second seed layer and the second metal film layer using a patterning process to form the pattern of the second electrode.BRIEF DESCRIPTION OF THE DRAWINGSFIG. 1 is a process flow chart corresponding to a conventional plating solution; FIG. 2 is a schematic plan view of the structure of a part of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 3 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 ; FIG. 4 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 ; FIG. 5 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 ; FIG. 6 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 ; FIG. 7 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 ; FIG. 8 is a schematic structure diagram of a phase shifter structure obtained using the process flow chart shown in FIG. 1 ; FIG. 9 is a schematic diagram of a portion of an SEM morphology of an electrode corresponding to an adjustable capacitor during the actual process of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 10 is a schematic cross-sectional structure diagram along the BB direction in FIG. 2 ; FIG. 11 is a schematic plan view of the structure of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 12 is a schematic cross-sectional structure diagram along the CC direction in FIG. 11 ; FIG. 13 is a schematic plan view of the structure of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 14 is a schematic cross-sectional structure diagram along the DD direction in FIG. 13 ; FIG. 15 is a schematic plan view of the structure of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 16 is a schematic cross-sectional structure diagram along the EE direction in FIG. 15 ; FIG. 17 is a schematic plan view of the structure of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 18 is a schematic diagram of a three-dimensional structure corresponding to FIG. 17 ; FIG. 19 is a schematic plan view of the structure of an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 20 is a schematic cross-sectional structure diagram along the FF direction in FIG. 19 ; FIG. 21 is a schematic cross-sectional structure diagram along the BB direction in FIG. 2 ; FIG. 22 is a schematic plan view of the structure of a phase shifter array provided by an embodiment of the present disclosure; FIG. 23 is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure; FIG. 24 is a process flow diagram of a method of manufacturing an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 25 is a process flow chart of step S 101 in FIG. 24 ; FIG. 26 is a flow diagram of a plating process in a method of manufacturing an adjustable phase shifter provided by an embodiment of the present disclosure; FIG. 27 is a process flow chart of step S 101.SPECIFIC EMBODIMENTSIn order to clarify the purpose, the technical solutions, and the advantages of the embodiments of the present disclosure, the technical solutions of the embodiments of the present disclosure will be clearly and fully described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are some, but not all, embodiments of the present disclosure. And the embodiments and features in the embodiments of the present disclosure may be combined with each other without conflict. Based on the described embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without inventive efforts fall within the scope of the present disclosure.Unless defined otherwise, technical terms or scientific terms used in the present disclosure are intended to have the usual meaning understood by one of ordinary skill in the art to which the present disclosure pertains. The use of "comprise" or "include" and other similar words in the present disclosure means that the elements or things that appear above the word include the elements or things listed after the word and their equivalents without excluding other elements or things.According to the capacitance calculation formula, the inventor has found in actual studies that the distance of the overlapping capacitors between the upper and lower substrates has a decisive influence on the performance of the phase shifter. In combination with the corresponding film layer structure of the phase shifter, the uniformity of the thickness of the transmission lines and the overlapping branch metal capacitor sheets has a decisive influence on device performance.In order to meet the requirements of skin depth on thickness, the glass-based metal film layer has to be produced by electroplating at present. In practical applications, the metal film layer corresponding to the transmission line or electrode in the liquid crystal phase shifter is often relatively thick, usually over 2 μm. A process flow chart corresponding to a conventional plating solution is shown in Fig. 1. The electroplating process flow mainly includes five steps including 1~5. Step 1: depositing a seed layer; accordingly forming a seed layer 01; Step 2: exposing thick photoresist (photoresist, PR); wherein first a thick PR film layer 02 can be formed, the thickness of the PR film layer 02 increasing as the required copper thickness (Cu) increases, and then the PR film layer 02 is patterned to form a PR film layer having the required pattern; Step 3: electroplating with thick Cu; wherein electroplating with thick Cu 03 can be performed after the pattern of the PR film layer 02; Step 4: releasing thick PR; wherein the pattern of the PR film layer 02 can be released; Step 5: etching the seed layer; wherein the seed layer 01 may be etched to form the required pattern of the Cu film layer. Since a PR thick film layer 02 needs to be formed before plating with thick Cu, material and manufacturing process requirements for the PR film layer 02 are relatively high, and mass production cannot be guaranteed. Due to the properties such as current concentration in the electroplating process, the uniformity of the thickness of the film layer in the pattern electroplating is poor. In addition, since the thickness of the metal film layer closely relates to the shape and distribution, etc., of the plating pattern on the substrate, the uniformity of plating is difficult to control. The designed thickness of the metal film layer has a uniformity of 33% to 150%, the uniformity being low, thereby reducing the phase shift performance of the phase shifter.In view of this, embodiments of the present disclosure provide an adjustable phase shifter, a method for manufacturing the same, and an electronic device to ensure uniformity of thickness of the metal film layer and improve phase shift performance of the phase shifter.As illustrated in conjunction with FIGS. 2 and 3, an embodiment of the present disclosure provides an adjustable phase shifter, where FIG. 2 is a schematic plan view of the structure of a part of an adjustable phase shifter, and FIG. 3 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2. In particular, the adjustable phase shifter comprises:a first substrate 10 and a second substrate 20 arranged opposite to each other;an adjustable dielectric layer 30 disposed between the first substrate 10 and the second substrate 20;a first electrode 40 located on a side of the first substrate 10 facing the adjustable dielectric layer 30;a second electrode 50 disposed on a side of the second substrate 20 facing the adjustable dielectric layer 30, wherein an adjustable capacitor 60 is formed in an overlap region of the first electrode 40 and the second electrode 50; wherein, along a direction away from the first substrate 10, the cross-sectional area of the first electrode 40 parallel to a plane in which the first substrate 10 is disposed exhibits a decreasing trend; and, along a direction away from the second substrate 20, the cross-sectional area of the second electrode 50 parallel to a plane in which the second substrate 20 is disposed exhibits a decreasing trend.In the specific embodiment, the adjustable phase shifter provided by the embodiment of the present disclosure includes a first substrate 10 and a second substrate 20 arranged in opposition. The first substrate 10 and the second substrate 20 may be glass substrates, polyimide (PI), or liquid crystal polymer (LCP). Of course, the first substrate 10 and the second substrate 20 may be arranged according to actual application requirements, which is not limited here.The adjustable phase shifter provided by the embodiment of the present disclosure further includes an adjustable dielectric layer 30 disposed between the first substrate 10 and the second substrate 20. In an exemplary embodiment, the adjustable dielectric layer 30 may be a liquid crystal layer, the corresponding adjustable phase shifter may be a liquid crystal phase shifter, and the liquid crystal molecules of the liquid crystal layer may be positive or negative liquid crystal molecules, which is not limited herein. Moreover, the adjustable phase shifter further comprises a first electrode 40 located on a side of the first substrate 10 facing the adjustable dielectric layer 30, and a second electrode 50 located on a side of the second substrate 20 facing the adjustable dielectric layer 30. In an exemplary embodiment, the first electrode 40 may be located on a surface of the side of the first substrate 10 facing the tunable dielectric layer 30, and the second electrode 50 may be located on a surface of the side of the second substrate 20 facing the tunable dielectric layer 30. The materials of the first electrode 40 and the second electrode 50 may be the same or different. For example, the material of the first electrode 40 may be indium tin oxide (ITO), copper (Cu), or silver (Ag), and the like, and the material of the second electrode 50 may be ITO, Cu, or Ag, and the like. Different materials have different conductivities and different losses. In practical applications, the materials of the first electrode 40 and the second electrode 50 may be selected according to the need for the phase shift degree of the adjustable phase shifter, which is not limited here.In the specific embodiment, the adjustable capacitor 60 is formed in the overlapping area of the first electrode 40 and the second electrode 50. In an exemplary embodiment, there may be a plurality of first electrodes 40 and a plurality of second electrodes 50. Accordingly, there may be multiple adjustable capacitors 60. When the adjustable dielectric layer 30 is a liquid crystal layer, different voltages are applied to the first electrode 40 and the second electrode 50 corresponding to the corresponding adjustable capacitor 60, whereby a vertical electric field can be generated between the two, driving liquid crystal molecules of the liquid crystal layer for deflection, thereby changing the dielectric constant of the liquid crystal layer and thus the phase shift amount of the adjustable phase shifter.As illustrated in conjunction with FIG. 3, the cross-sectional area of the first electrode 40 parallel to a plane in which the first substrate 10 is located exhibits a decreasing trend along a direction away from the first substrate 10; wherein the direction away from the first substrate 10 may be a direction represented by Z 1 in FIG. 3. In addition, the cross-sectional area of the second electrode 50 parallel to a plane in which the second substrate 20 is located exhibits a decreasing trend along a direction away from the second substrate 20; wherein the direction away from the second substrate 20 may be a direction represented by Z 2 in FIG. 3. The first electrode 40 and the second electrode 50, whose cross-sectional area shows a decreasing trend, offer the possibility of first electroplating a metal film layer of the required thickness over the entire area during the electroplating process. In practical applications, the entire surface may be first copper plated to eliminate the influence of patterning on electroplating uniformity. Then, the desired metal pattern can be covered and protected with a PR adhesive. The unprotected part may be etched with an etching solution to form the final required metal pattern and finally the PR adhesive may be stripped off. The entire process not only improves the uniformity and controllability of plating, but also reduces process complexity, thereby ensuring the uniformity of the thickness of the metal film layer and improving the phase shift performance of the adjustable phase shifter.In embodiments of the present disclosure, FIG. 4 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 in an exemplary embodiment. Specifically, the cross-sectional shapes of the first electrode 40 and the second electrode 50 along a corresponding thickness direction are each trapezoidal, and the length of a lower edge of the corresponding cross-sectional shape in contact with the corresponding substrate is greater than the length of an upper edge.As illustrated in connection with FIG. 4, the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the respective thickness directions are each trapezoidal, wherein the first electrode 40 and the second electrode 50 may be symmetrically configured; and the length of the lower edge of the respective cross-sectional shape in contact with the respective substrate is greater than the length of the upper edge. As shown in Fig. 4, the length of the lower edge is L2' and the length of the upper edge is L1 with L2' > L1. In an exemplary embodiment, the trapezoidal shape may be a standard shape (as shown in FIG. 4 ) or may not be a standard shape, which is not limited herein. In this way, the first electrode 40 and the second electrode 50 having a trapezoidal cross-sectional shape make it possible to initially electro-deposit a metal film layer having a required thickness over the entire surface during the electro-deposition process. This ensures uniformity of the thickness of the metal film layer and improves the phase shift performance of the adjustable phase shifter.In an embodiment of the present disclosure, the angles (i.e., inclination angles) between the two side edges and the lower edge of the cross-sectional shape of at least one of the first electrode 40 and the second electrode 50 are equal angles along the corresponding thickness direction. In an exemplary embodiment, the angles between the two side edges and the lower edge of the cross-sectional shape of the first electrode 40 along the corresponding thickness direction are the same, and the angles between the two side edges and the lower edge of the cross-sectional shape of the second electrode 50 along the corresponding thickness direction are the same. As illustrated in conjunction with FIG. 4, taking the example of the first electrode 40, the angles between the two side edges and the bottom edge are φ 1 and φ 2 with φ 1= φ 2, respectively, so that the cross-sectional shape of the first electrode 40 may be an isosceles trapezoid accordingly. According to the same construction principle, the cross-sectional shape of the second electrode 50 may also be an isosceles trapezoid configured symmetrically to the first electrode 40. In this way, the symmetry of the overlap area of the adjustable capacitor 60 is ensured. In an exemplary embodiment, only the angles between the two side edges and the lower edge may be the same as the cross-sectional shape of the first electrode 40 along the corresponding thickness direction. In an exemplary embodiment, only the angles between the two side edges and the lower edge may be the same as the cross-sectional shape of the second electrode 50 along the corresponding thickness direction. Of course, the specific values of the same angles of the angles between the two side edges and the lower edge of the cross-sectional shape of at least one of the first electrode 40 and the second electrode 50 along the corresponding thickness direction may be set according to the actual application requirements, which is not limited here.As shown in connection with FIG. 4, the range of angles is (0°, 90°). For example, φ 1= φ 2= 45 ° applies. In the specific embodiment, the specific angle between the side edge and the bottom edge of the trapezoid corresponding to each cross-sectional shape can be designed according to the required phase shift degree of the adjustable phase shifter, which is not limited here.In embodiments of the present disclosure, FIG. 5 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 in an exemplary embodiment.As illustrated in conjunction with FIG. 5, the side edges of the cross-sectional shape of the first electrode 40 and the second electrode 50 are arc-shaped along the corresponding thickness direction, and the arc shape is recessed in a direction near the center position of the corresponding cross-sectional shape. Accordingly, in the first electrode 40 in the direction away from the first electrode 40, the angle between the corresponding position of the side edge and a plane parallel to the corresponding bottom edge exhibits an increasing trend. In this case, when the thickness of the metal film layer corresponding to the first electrode 40 and the second electrode 50 is relatively large, the time of contact with the etching solution at different positions of the metal film layer also varies due to the longer etching time, so that it is possible to initially electro-deposit a metal film layer of the required thickness over the entire area during the electro-deposition process. As shown in FIG. 5, the angles between the three different positions of the side edge and a plane parallel to the corresponding bottom edge are φ 3, φ 4 and φ 5 with φ 3< φ 4< φ 5. respectively. Moreover, the construction principle of the second electrode 50 is the same as that of the first electrode 40, and will not be described again here.It should be noted that, under the same process parameters, the angle between the side edges of the cross-sectional shape of the first electrode 40 having the same thickness and a plane parallel to the corresponding lower edge is the same angle; and the angle between the side edges of the cross-sectional shape of the second electrode 50 having the same thickness and a plane parallel to the corresponding lower edge is the same angle.In embodiments of the present disclosure, FIG. 6 is a schematic cross-sectional structure diagram along the AA direction in FIG. 2 in an exemplary embodiment. Specifically, the first electrode 40 and the second electrode 50 are arranged with chamfered corners between respective side edges and upper edges of the cross-sectional shapes along respective thickness directions. As further illustrated in conjunction with FIG. 6, the first electrode 40 and the second electrode 50 are formed with rounded corners between the respective side edges and top edges of the cross-sectional shapes along the respective thickness directions. As illustrated in FIG. 7, the first electrode 40 and the second electrode 50 are formed with cut-off corners between the respective side edges and upper edges of the cross-sectional shapes along the respective thickness directions. That is, the right angles of the first electrode 40 and the second electrode 50 on the adjustable capacitor 60 can be adjusted to rounded or cut corners, thereby avoiding the risk of peak discharge in high power signals.As illustrated in conjunction with FIG. 4, in an embodiment of the present disclosure, the capacitance value of the adjustable capacitor 60 is: where C 1 represents the capacitance value of the adjustable capacitor 60, ε 0 represents the vacuum dielectric constant, ε r represents the relative dielectric constant, L represents the extension length of the first electrode 40 and the second electrode 50, L 1 represents the length of the upper edge of the cross-sectional shape of the first electrode 40 and the second electrode 50 along the corresponding thickness direction, L 2' represents the length of the lower edge of the cross-sectional shape of the first electrode 40 and the second electrode 50 along the corresponding thickness direction, D 1 represents the distance between the two upper edges of the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the corresponding thickness direction in the overlapping area, and D 2 represents the distance between the two lower edges of the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the corresponding thickness direction in the overlapping area.In the specific embodiment, the cross-sectional shapes of the first electrode 40 and the second electrode 50 may be equivalent to an isosceles trapezoidal shape illustrated in FIG. 4, where the angles between the side edges and the bottom edge are each φ (i.e., φ 1= φ 2= φ). Accordingly, the capacitance value of the adjustable capacitor 60 may be equivalent to:Accordingly, the same appliesIn an embodiment of the present disclosure, the inventor has found that the phase shifter structure obtained using the process flow chart shown in FIG. 1 is illustrated in FIG. 8. In order to simultaneously ensure that the capacitance value of the adjustable capacitor 60 of the adjustable phase shifter provided by the embodiment of the present disclosure is equal to the capacitance value of the phase shifter shown in FIG. 8, in consideration of the uniformity of the thickness of the metal film layer, it is necessary to increase the corresponding capacitor width of the adjustable capacitor 60, i.e., the corresponding width of the first electrode 40 and the second electrode 50, when the capacitor lengths of the two are equal.Ideally, the capacitance value of the overlap capacitor corresponding to the phase shifter shown in FIG. 8 is: where ε 0 represents the vacuum dielectric constant, ε r represents the relative dielectric constant, L represents the extension length of the corresponding electrode of the overlap capacitor, L 2 represents the width of the overlap capacitor, and D 1 represents the distance between the two electrodes of the overlap capacitor.In this way, when the two capacitance values are equal, the capacitor width of the adjustable phase shifter in the embodiment of the present disclosure may be:In actually manufacturing the adjustable phase shifter according to an embodiment of the present disclosure, the capacitor width of the corresponding overlap capacitor may be compensated for according to the capacitance value of the overlap capacitor required for the conventional plating process to determine the capacitor width of the adjustable capacitor 60 of the required adjustable phase shifter, thereby ensuring the phase shift performance of the adjustable phase shifter while considering the uniformity of the thickness of the metal film layer of the corresponding electrode of the overlap capacitor.Moreover, it should be noted that in the actual production of the adjustable phase shifter according to an embodiment of the present disclosure, the angle between the respective side edges and the bottom edge of the first electrode 40 and the second electrode 50 is changed by various factors such as the composition of the etching solution, the thickness of the copper, the device, and the like, and the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the respective thickness directions are not standard trapezoidal. In the actual process, in the first electrode 40 and the second electrode 50, the material of which is copper, the thickness of the plated seed layer of molybdenum (Mo) / Cu is 300 angstroms / 5000 angstroms, and the thickness of the entire metal film layer (including the seed layer) after plating with thick Cu is 2 μm, and a schematic diagram of the morphology of a part of the corresponding electrode in the scanning electron microscope (SEM) is shown in FIG. 9. Of course, for different process parameters, the respective SEM morphologies of the first electrode 40 and the second electrode 50 are different, which will not be described in detail here.In view of the fact that the cross-sectional shapes of the first electrode 40 and the second electrode 50 along the respective thickness directions are not standard trapezoidal, in order to more accurately determine the capacitor width of the adjustable phase shifter in the embodiment of the present disclosure, the equivalent capacitance value may be determined by segmental integration based on the shape of the actual film layer and the inclination angles at different positions of the respective side edges. Then, based on the equivalent relationship between the equivalent capacitance value and the ideal equivalent capacitance value, the width to be compensated is determined, and then the required capacitor width of the adjustable phase shifter is determined in the embodiment of the present disclosure, thereby improving the capacitance compensation accuracy of the adjustable phase shifter.Note that the relevant solution regarding the metal film layer of the corresponding electrode of the adjustable capacitor 60 in the embodiment of the present disclosure is suitable for the design of various types of adjustable phase shifters, thereby achieving better control of the process variation of the capacitor pitch and ensuring the overall performance of the corresponding adjustable phase shifter. In the specific embodiment, the adjustable phase shifter provided by the embodiment of the present disclosure may be a two-wire structure phase shifter or a single-wire structure schematic diagram.For a phase shifter with two-wire structure, FIG. 10 is a schematic cross-sectional structure diagram along the BB direction in FIG. 2 ; in particular, the first electrode 40 includes a first signal electrode 401 and a second signal electrode 402 that are arranged discontinuously, and the second electrode 50 includes a first patch electrode 501 attached to a side of the second substrate 20 facing the adjustable dielectric layer 30, wherein the orthographic projection of the first signal electrode 401 on the first substrate 10 and the orthographic projection of the second signal electrode 402 on the first substrate 10 respectively at least partially overlap with the orthographic projection of the first patch electrode 501 on the first substrate 10 to form the adjustable capacitor 60. In an exemplary embodiment, the first patch electrode 501 may be attached to a surface of a side of the second substrate 20 facing the adjustable dielectric layer 30. As is also shown in conjunction with FIG. 10, an adjustable capacitor 60 is formed in each case in the overlap region between the first signal electrode 401 and the first patch electrode 501 and in the overlap region between the second signal electrode 402 and the patch electrode. Moreover, as will be shown still in connection with FIG. 10, a ground electrode is provided on a surface of a side of the first substrate 10 facing away from the adjustable dielectric layer 30 to provide a reference ground for the first signal electrode 401 and the second signal electrode 402, thereby forming a structure similar to a microstrip transmission line.For a phase shifter having a two-wire structure, in an exemplary embodiment, as shown in FIGS. 11 and 12, FIG. 11 is a schematic plan view of the structure of an adjustable phase shifter, and FIG. 12 is a schematic cross-sectional structure diagram along the CC direction in FIG. 11 ; in particular, the first electrode 40 includes a first body portion 41 extending along a first direction and a plurality of first branch portions 42 connected to the first body portion 41 and extending along a second direction intersecting with the first direction, and the second electrode 50 includes a second body portion 51 extending along the first direction and a plurality of second branch portions 52 connected to the second body portion 51 and extending along the second direction, the first branch portions 42 at least partially overlapping with the corresponding second branch portions 52, to form the variable capacitor 60.As further illustrated in conjunction with FIGS. 11 and 12, the first electrode 40 includes a first body portion 41 extending along a first direction and a plurality of first branch portions 42 connected to the first body portion 41 and extending along a second direction intersecting with the first direction, the first direction being a direction illustrated by the arrow X 1 in FIG. 11 and the second direction being a direction illustrated by the arrow Y 1 in FIG. 11. The number of the plurality of first branch portions 42 may be adjusted according to the actual requirement on the phase shift degree of the adjustable phase shifter, and is not limited here. Moreover, the second electrode 50 includes a second body portion 51 extending along the first direction and a plurality of second branch portions 52 connected to the second body portion 51 and extending along the second direction. The number of the plurality of second branch portions 52 may be adjusted according to the actual requirement of the phase shift amount of the adjustable phase shifter. The orthographic projection of a first branch portion 42 on the first substrate 10 overlaps at least partially with the orthographic projection of a corresponding second branch portion 52 on the first substrate 10, in which case a corresponding variable capacitor 60 may be formed in the overlap region of the first branch portion 42 and the second branch portion 52, thereby ensuring the phase shift performance of the variable phase shifter. In practical applications, the number of the first branch sections 42 and the second branch sections 52 and their overlap area can be adjusted according to the actual requirement for the phase shift degree of the adjustable phase shifter, which is not described in detail here.For a phase shifter having a two-wire structure, in an exemplary embodiment, as shown in FIGS. 13 and 14, FIG. 13 is a schematic plan view of the structure of an adjustable phase shifter, and FIG. 14 is a schematic cross-sectional structure diagram along the DD direction in FIG. 13, in particular, the first electrode 40 includes a plurality of first ground electrodes 403 arranged discontinuously, each of the first ground electrodes 403 being coupled to a second ground electrode 70 arranged on a side of the first substrate 10 facing away from the adjustable dielectric layer 10 via a through hole passing through the thickness direction of the first substrate 10, and the orthographic projection of each of the first ground electrodes 403 on the first substrate 10 entirely falls within the range of the orthographic projection of the second ground electrode 70 on the first substrate 10, and the orthographic projection of each of the first ground electrodes 403 on the first substrate 10 at least partially overlaps with the orthographic projection of the first patch electrode 501 on the first substrate 10 to form the variable capacitor 60.As further illustrated in connection with FIGS. 13 and 14, the first electrode 40 includes a plurality of first ground electrodes 403 arranged discontinuously, each of the first ground electrodes 403 being coupled via a through hole passing through the thickness direction of the first substrate 10 to a second ground electrode 70 arranged on a side of the first substrate 10 opposite to the adjustable dielectric layer 30 to provide a reference ground for the first signal electrode 401 and the second signal electrode 402, thereby forming a structure similar to a microstrip transmission line. Moreover, the orthographic projection of each of the first ground electrodes 403 on the first substrate 10 falls entirely within the range of the orthographic projection of the second ground electrode 70 on the first substrate 10, thereby improving the use performance of the adjustable phase shifter. In this case, in addition to the first signal electrode 401 and the first patch electrode 501 forming an adjustable capacitor 60 in the overlap region and the second signal electrode 402 and the first patch electrode 501 forming an adjustable capacitor 60 in the overlap region, each of the first ground electrodes 403 and the first patch electrode 501 may also form an adjustable capacitor 60 in the overlap region, since the orthographic projection of each of the first ground electrodes 403 on the first substrate 10 at least partially overlaps with the orthographic projection of the first patch electrode 501 on the first substrate 10, thereby ensuring the phase shift performance of the adjustable phase shifter.A phase shifter having a single-wire structure may be a phase shifter having a coplanar waveguide (CPW) structure. In an exemplary embodiment, as shown in FIGS. 15 and 16, FIG. 15 is a schematic plan view of the structure of an adjustable phase shifter, and FIG. 16 is a schematic cross-sectional structure diagram along the EE direction in FIG. 15. Specifically, the first electrode 40 includes a plurality of third ground electrodes 404 arranged discontinuously and a third signal electrode 405 located between two adjacent third ground electrodes 404, and the second electrode 50 includes a plurality of second patch electrodes 502 arranged discontinuously, wherein the orthographic projections of each of the third ground electrodes 404 and the third signal electrode 405 on the first substrate 10 respectively at least partially overlap with the orthographic projection of the corresponding second patch electrodes 502 on the first substrate 10 to form the adjustable capacitor 60.As further illustrated in connection with FIGS. 15 and 16, the first electrode 40 includes a plurality of third ground electrodes 404 arranged discontinuously and a third signal electrode 405 located between two adjacent third ground electrodes 404. In an exemplary embodiment, the plurality of third ground electrodes 404 and the third signal electrode 405 may each be located on a surface of a side of the first substrate facing the adjustable dielectric layer 30. The second electrode 50 comprises a plurality of second patch electrodes 502 arranged spaced apart from each other, wherein the orthographic projections of each of the third ground electrodes 404 and the third signal electrode 405 on the first substrate 10 respectively at least partially overlap with the orthographic projection of the corresponding second patch electrode 502 on the first substrate 10. In this case, the adjustable capacitor 60 can be formed in the overlap region of each of the third ground electrodes 404 and the third signal electrode 405 with a respective second patch electrode 502. In practical applications, the number of the third ground electrodes 404 and the second patch electrodes 502 may be adjusted as needed to the phase shift degree of the adjustable phase shifter, which is not limited here.For a phase shifter with single wire structure, in an exemplary embodiment, as shown in FIGS. 17 and 18, FIG. 17 is a schematic plan view of the structure of an adjustable phase shifter, and FIG. 18 is a schematic diagram of a three-dimensional structure corresponding to FIG. 17, in particular, the first electrode 40 includes a fourth ground electrode 406 and a fourth signal electrode 407, the fourth ground electrode 406 includes a first ground electrode 4061 and a second ground electrode 4062 that are spaced apart from each other, the fourth signal electrode 407 being located between the first ground electrode 4061 and the second ground electrode 4062, and the second electrode 50 includes a plurality of third patch electrodes 503 that are spaced apart from each other; wherein the fourth signal electrode 407 comprises a third body portion 4071 extending along a third direction and a plurality of third branch portions 4072 connected to the third body portion 4071 and extending along a fourth direction intersecting with the third direction; wherein the first bottom electrode 4061 comprises a fourth body portion 40611 extending along the third direction and a plurality of fourth branch portions 40612 connected to the fourth body portion 40611 and extending along the fourth direction; wherein the second bottom electrode 4062 comprises a fifth body portion 40621 extending along the third direction and a plurality of fifth branch portions 40622 connected to the fifth body portion 40621 and extending along the fourth direction; wherein the orthographic projection of each of the third patch electrodes 503 on the first substrate 10 at least partially overlaps with the orthographic projections of the corresponding third branch portions 4072, fourth branch portions 40612, and fifth branch portions 40622 on the first substrate 10 to form the variable capacitor 60.As further illustrated in conjunction with FIGS. 17 and 18, the third direction is a direction illustrated by the arrow X 2 in FIG. 17, and the fourth direction is a direction illustrated by the arrow Y 2 in FIG. 17. The fourth signal electrode 407 has tunable multiple third branch portions 4072. The first ground electrode 4061 of the fourth ground electrode 406 includes tunable multiple fourth branch portions 40612. The second ground electrode 4062 of the fourth ground electrode 406 includes tunable multiple fifth branch portions 40622. In this case, not only the adjustable capacitor 60 may be formed by partially overlapping each third patch electrode 503 with the corresponding fourth branch portion 40612and the third branch portion 4072, but also the adjustable capacitor 60 may be formed by partially overlapping each third patch electrode 503 with the corresponding fifth branch portion 40622and the third branch portion 4072, thereby ensuring the phase shift performance of the adjustable phase shifter.For a phase shifter having a single-wire structure, in an exemplary embodiment, as shown in FIGS. 19 and 20, FIG. 19 is a schematic plan view of the structure of an adjustable phase shifter, and FIG. 20 is a schematic cross-sectional structure diagram along the FF direction in FIG. 19. Specifically, the first electrode 40 includes a plurality of fifth ground electrodes 408 arranged spaced apart from each other and a fifth signal electrode 409 located between two adjacent fifth ground electrodes 408, and the second electrode 50 includes fourth patch electrode 504 attached to a side of the second substrate 20 facing the adjustable dielectric layer 30, wherein the orthographic projections of each of the fifth ground electrodes 408 and the fifth signal electrode 409 on the first substrate 10 respectively at least partially overlap with the orthographic projection of the fourth patch electrodes 504 on the first substrate 10 to form the variable capacitor 60.As further illustrated in connection with FIGS. 19 and 20, the orthographic projection of the fifth signal electrode 409, which is arranged on a surface of a side of the first substrate 10 facing the adjustable dielectric layer 30, on the first substrate 10 falls completely into the area of the orthographic projection of the fourth patch electrode 504, which is attached to a surface of a side of the second substrate 20 facing the adjustable dielectric layer 30, on the first substrate 10. Moreover, the orthographic projection of each fifth ground electrode 408 on the first substrate 10 partially overlaps with the orthographic projection of the fourth patch electrode 504 on the first substrate 10, so that the adjustable capacitor 60 can be formed in the overlapping area of the fifth ground electrode 408 and the fourth patch electrode 504. In this way, the phase shift performance of the adjustable phase shifter is ensured.In an embodiment of the present disclosure, FIG. 21 is a schematic cross-sectional structure diagram along the BB direction in FIG. 2 In addition to the above-mentioned related film layers, in the example of the first substrate 10, the adjustable phase shifter further includes a pattern of the mark metal layer 80 disposed on a side of the first substrate 10 facing the adjustable dielectric layer 30, a first passivation layer (not illustrated in the figure) disposed on a side of the mark metal layer 80 facing away from the first substrate 10, a second passivation layer 90 disposed on a side of the first electrode 40 facing away from the first substrate 10, a fill layer 100 disposed on a side of the second passivation layer 90 facing away from the first substrate 10, a plurality of pillars 110 disposed between the first substrate 10 and the second substrate 20, and an alignment layer (not shown in the figure) disposed on a side of the tunable dielectric layer 30 near the first substrate 10. Here, the material of the mark metal layer 80 may be Mo or Al, which is not limited here.The material of the first passivation layer and the second passivation layer 90 may be silicon nitride (SiN) or silicon oxide (SiO), which is not limited here. In an exemplary embodiment, the dielectric constant of the first passivation layer may be controlled between 2 and 4, thereby reducing the influence on the phase shift degree and the insertion loss of the adjustable phase shifter. The second passivation layer 90 may mitigate the internal stress caused by the subsequent metal transfer line and simultaneously protect the metal film layer corresponding to the electrode to prevent a chemical reaction upon contact with the liquid crystal or the air. The filling layer 100 may be a resin layer material. In the actual process, the relevant film layer may be smoothed with the film layer of the metal transmission line by a spin coating process, and the height of the film layer may also be controlled to be about 0.5 μm above the metal film layer of the transmission line by a slot coating process, and a support column may be formed thereover after a hardening process, for example, the height of the support column is 2 μm to 5 μm. As another example, in a low frequency adjustable phase shifter, the height of the support column 110 may be 30 μm to 40 μm. Of course, the height of the support column 110 can also be adjusted according to the actual application requirements, which is not limited here.Moreover, the alignment layer may be a polyimide (PI) film. When the adjustable dielectric layer 30 in the phase shifter is a liquid crystal layer, the liquid crystal molecules in the liquid crystal layer may be tilted by the preset alignment layer to a predetermined angle. The relevant film layer structures on the first substrate 10 and the second substrate 20 are arranged symmetrically. For the relevant film layer structures on the second substrate 20, reference may be made to the description of the corresponding parts of the first substrate 10, which will not be described again here. In this case, after the drive voltage is applied to the relevant electrodes, the matching efficiency of the dielectric constant of the liquid crystal layer is improved, thereby improving the phase shift efficiency of the adjustable phase shifter. Of course, other film layers of the adjustable phase shifter may also be adjusted according to actual application requirements. For the details, reference may be made to the specific settings in related technologies, which will not be described in detail herein.Note that the adjustable phase shifter provided by the embodiments of the present disclosure may also have a specific structure according to actual application requirements, in addition to the above-mentioned structure, which will not be described in detail herein. Moreover, based on the adjustable phase shifter provided by the embodiment of the present disclosure, a plurality of adjustable phase shifters are arranged in an array to be able to form a phase shifter array, as shown in FIG. 22. In this case, the region S represents a phase shifter. In the specific embodiment, each adjustable phase shifter in the phase shifter array may be a CPW-based coplanar phase shifter or a CPW-based anisotropic phase shifter. Here, in the coplanar phase shifter, the signal electrode and the ground electrode are located on the same surface of the same substrate, that is, on the same side inside the adjustable dielectric layer 30, and there are overlapping electrode sheets each forming a projected orthogonal area, thereby forming the adjustable capacitor 60. In the anisotropic phase shifter, the signal electrode and the ground electrode are located on two opposite sides within the adjustable dielectric layer 30, and the overlapping electrode sheets are formed by the branches of the signal electrode and / or the ground electrode, and form a projected orthogonal area, thereby forming an adjustable capacitor 60.Based on the same disclosed concept, an embodiment of the present disclosure as illustrated in FIG. 23 provides an electronic device comprising:an adjustable phase shifter 1000 as described above, a radiation antenna 2000, a power division network 3000 and a feed network 4000 arranged in an array.In the specific embodiment, power sharing network 3000 and feed network 4000 may have the same network structure. Moreover, for the specific structures of the radiation antenna 2000, the power sharing network 3000, and the feed network 4000, specific implementations in related technologies may be referred to, which will not be described in detail herein. Moreover, the problem solution principle of this electronic device is similar to that of the above-mentioned adjustable phase shifter. Therefore, for the execution of this electronic device, reference can be made to the execution of the above-mentioned adjustable phase shifter, and the repetition will not be described again.Based on the same disclosed concept, an embodiment of the present disclosure as shown in FIG. 24 provides a method of manufacturing an adjustable phase shifter as described above, comprising:S 101: forming a pattern of the first electrode on a side of the first substrate and forming a pattern of the second electrode on a side of the second substrate using a plating process;S 102: forming the adjustable dielectric layer between the first substrate and the second substrate, so that the adjustable capacitor is formed in the overlap region of the first electrode and the second electrode.In the specific embodiment, the specific implementation process from step S 101 to step S 102 is as follows:First, using a plating process, a pattern of the first electrode on a side of the first substrate and a pattern of the second electrode on a side of the second substrate are respectively formed. For the specific formation process of the first electrode pattern and the second electrode pattern, reference may be made to the following description of the respective parts. Then, an adjustable dielectric layer is formed between the first substrate and the second substrate, the first substrate and the second substrate are joined together, and an adjustable capacitor is formed in the overlapping area of the first electrode and the second electrode.In an embodiment of the present disclosure, as shown in FIG. 25, in step S 101, forming a pattern of the first electrode on a side of the first substrate using a plating process includes:S201: depositing an entire first seed layer on a side of the first substrate;S 202: forming an entire first metal film layer on a side of the first seed layer facing away from the first substrate using a plating process;S 203: etching the first seed layer and the first metal film layer using a patterning process to form the pattern of the first electrode.In the specific embodiment, the specific implementation process from step S 201 to step S 203 in conjunction with the adjustable phase shifter shown in FIG. 21 and the electroplating process flowchart shown in FIG. 26 is as follows:Taking the example of forming a pattern of the first electrode on one side of the first substrate using a plating process, an Al / Mo metal film layer is first deposited on the first substrate using a physical vapor deposition (PVD); then, a specific mask (mask) for the mark used in the subsequent process is formed through a photomask having a specific pattern (pattern) in combination with an etching process;then, a SiNxfilm layer is formed on the above film layer by chemical vapor deposition (CVD), the dielectric constant of the SiNxfilm layer is controlled to be between 2 and 4 to reduce the influence on the phase shift amount and the insertion loss of the adjustable phase shifter; thereafter, a drive wiring is deposited and formed on the above film layer, wherein the drive wiring may be a wiring formed of an ITO film layer having a line width of 10 μm and a line pitch of 5 μm; In addition, the driving wiring may also be an array line formed by a MoNb / Cu film layer, which, in combination with a thin film transistor (TFT) device, forms an active matrix (AM) for driving the array film layer;Subsequently, a transfer line film layer is formed on the above film layer again using the electroplating process, an entire seed layer can be formed first by PVD; and then, using an electroplating apparatus using the electroplating process, an entire first metal film layer is formed on a side of the first seed layer facing away from the first substrate, that is, the metal growth having the required film thickness is completed; thereafter, using a patterning process, the first seed layer and the first metal film layer are etched to form the pattern of the first electrode. The desired metal pattern can be covered with a PR adhesive andThe exposed portion may be protected and etched with an etching solution to form a metal film layer having the required pattern, and then the PR adhesive may be peeled off to form the first electrode having the required pattern.Then, a negative voltage film layer may be deposited on the above film layer. The negative voltage film layer may be made of SiNx, thereby alleviating the internal stress caused by the excessively thick metal transmission line layer and simultaneously protecting the metal film layer to prevent contact with liquid crystals or air from causing a chemical reaction. Thereafter, the resin layer material may be sprayed on a side of the above-mentioned film layer opposite to the first substrate, and the film layer having the metal transfer line film layer is smoothed by a spin coating process. The height of the film layer may also be controlled to be about 0.5 μm above the metal film layer of the transmission line by a slot coating process, and a filling layer is formed after a curing process. This fill layer ensures flatness during subsequent fabrication of the film layer. Then, above it (in the non-metal transmission line region), a support column is produced, the height of which may be 2 μm to 5 μm. The support column may be formed in a space in which the first substrate does not overlap with the metal transmission line or the electrode. The material of the support column may be a polystyrene (polystyrene, PS) type resin material or an oleoresin capsicum (OC) material. The cross-sectional shape of the support pillar may be square, round, and the like. After preparation of the support column and the filling layer, the PI film layer may be uniformly coated over the above-mentioned film layer by an ink jet printing (inkjet) process, and then the optical alignment process of the PI film layer may be performed by an OA device to form the alignment layer.In an embodiment of the present disclosure, as shown in FIG. 27, in step S 101, forming a pattern of the second electrode on a side of the second substrate using a plating process includes:S 301: depositing an entire second seed layer on a side of the second substrate;S 302: forming an entire second metal film layer on a side of the second seed layer facing away from the second substrate using a plating process;S 303: etching the second seed layer and the second metal film layer using a patterning process to form the pattern of the second electrode.For the specific implementation process from step S 301 to step S 303, a similar process may also be used to form the pattern of the second electrode on the second substrate and prepare film layers other than the support pillars. The specific process will not be described in detail. Then, by applying a frame seal adhesive around the device, dropping liquid crystals therein, and assembling, preparation of the entire device can be completed. It is also possible to apply frame seal adhesives around the device and then, after assembly, inject liquid crystal by a crystal filling method to complete the preparation of the entire device.Although preferred embodiments of the present disclosure have been described, those skilled in the art can make additional changes and modifications to these embodiments once the basic inventive concepts are known. Therefore, it is intended that the appended claims be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present disclosure.Obviously, various changes and modifications can be made to the present disclosure by those skilled in the art without departing from the spirit and scope of the present disclosure. Thus, when these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and the corresponding technology, the present disclosure is intended to include these modifications and variations as well.

Claims

An adjustable phase shifter comprising: a first substrate and a second substrate disposed opposite to each other; an adjustable dielectric layer disposed between the first substrate and the second substrate; a first electrode disposed on a side of the first substrate facing the adjustable dielectric layer; a second electrode disposed on a side of the second substrate facing the adjustable dielectric layer, wherein an adjustable capacitor is formed in an overlap region of the first electrode and the second electrode; wherein along a direction away from the first substrate, the cross-sectional area of the first electrode parallel to a plane in which the first substrate is disposed exhibits a decreasing trend; and along a direction away from the second substrate, the cross-sectional area of the second electrode parallel to a plane in which the second substrate is disposed exhibits a decreasing trend.The adjustable phase shifter according to claim 1, wherein the cross-sectional shapes of the first electrode and the second electrode along a corresponding thickness direction are each trapezoidal, and the length of a lower edge of the corresponding cross-sectional shape in contact with the corresponding substrate is greater than the length of an upper edge.The adjustable phase shifter according to claim 2, wherein the angles between the two side edges and the bottom edge of the cross-sectional shape of at least one of the first electrode and the second electrode are equal angles along the corresponding thickness direction.The adjustable phase shifter of claim 3, wherein the range of angles is (0°, 90°).The adjustable phase shifter according to any one of claims 1 to 4, wherein the side edges of the cross-sectional shape of the first electrode and the second electrode are arc-shaped along the corresponding thickness direction, and the arc shape is recessed in a direction near the center position of the corresponding cross-sectional shape.The adjustable phase shifter of claim 5, wherein the first electrode and the second electrode are arranged with chamfered corners between respective side edges and top edges of the cross-sectional shapes along respective thickness directions.The variable phase shifter according to claim 6, wherein the capacitance value of the variable capacitor is: C 1 = ε 0 ε r × L × ( L 1 + L 2 ' ) / 2 ( D 1 + D 2 ) / 2, wherein C 1 represents the capacitance value of the variable capacitor, ε 0 represents the vacuum dielectric constant, ε r represents the relative dielectric constant, L represents the extension length of the first electrode and the second electrode, L 1 represents the length of the upper edge of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction, L 2' represents the length of the lower edge of the cross-sectional shape of the first electrode and the second electrode along the corresponding thickness direction, D 1 represents the distance between the two upper edges of the cross-sectional shapes of the first electrode and the second electrode along the corresponding thickness direction in the overlapping region, and D 2 represents the distance between the two lower edges of the cross-sectional shapes of the first electrode and the second electrode along the corresponding thickness direction in the overlapping region.The adjustable phase shifter of claim 7, wherein the first electrode comprises a first signal electrode and a second signal electrode arranged discontinuously, and the second electrode comprises a first patch electrode attached to a side of the second substrate facing the adjustable dielectric layer, wherein the orthographic projection of the first signal electrode on the first substrate and the orthographic projection of the second signal electrode on the first substrate each at least partially overlap with the orthographic projection of the first patch electrode on the first substrate to form the adjustable capacitor.The adjustable phase shifter of claim 7, wherein the first electrode comprises a first body portion extending along a first direction and a plurality of first branch portions connected to the first body portion and extending along a second direction intersecting with the first direction, and the second electrode comprises a second body portion extending along the first direction and a plurality of second branch portions connected to the second body portion and extending along the second direction, the first branch portions at least partially overlapping with the corresponding second branch portions to form the adjustable capacitor.The adjustable phase shifter of claim 8, wherein the first electrode comprises a plurality of first ground electrodes arranged discontinuously, each of the first ground electrodes being coupled via a through hole passing through the thickness direction of the first substrate to a second ground electrode arranged on a side of the first substrate opposite the adjustable dielectric layer, and the orthographic projection of each of the first ground electrodes on the first substrate falls entirely within the range of the orthographic projection of the second ground electrode on the first substrate, and the orthographic projection of each of the first ground electrodes on the first substrate overlaps at least partly with the orthographic projection of the first patch electrode on the first substrate to form the adjustable capacitor.The adjustable phase shifter of claim 7, wherein the first electrode comprises a plurality of third ground electrodes arranged discontinuously and a third signal electrode located between two adjacent third ground electrodes, and the second electrode comprises a plurality of second patch electrodes arranged discontinuously, wherein the orthographic projections of each of the third ground electrodes and the third signal electrode on the first substrate respectively at least partially overlap with the orthographic projection of the corresponding second patch electrode on the first substrate to form the adjustable capacitor.The adjustable phase shifter of claim 7, wherein the first electrode comprises a fourth ground electrode and a fourth signal electrode, wherein the fourth ground electrode comprises a first ground electrode and a second ground electrode spaced apart from each other, wherein the fourth signal electrode is located between the first ground electrode and the second ground electrode, and wherein the second electrode comprises a plurality of third patch electrodes spaced apart from each other; wherein the fourth signal electrode comprises a third body portion extending along a third direction and a plurality of third branch portions connected to the third body portion and extending along a fourth direction intersecting the third direction; wherein the first ground electrode comprises a fourth body portion extending along the third direction and a plurality of fourth branch portions connected to the fourth body portion and extending along the fourth direction; wherein the second ground electrode comprises a fifth body portion extending along the third direction and a plurality of fifth branch portions connected to the fifth body portion and extending along the fourth direction; wherein the orthographic projection of each of the third patch electrodes on the first substrate at least partially overlaps with the orthographic projections of the corresponding third branch portions, fourth branch portions, and fifth branch portions, respectively, on the first substrate to form the adjustable capacitor.The adjustable phase shifter of claim 7, wherein the first electrode comprises a plurality of fifth ground electrodes spaced apart from each other and a fifth signal electrode located between two adjacent fifth ground electrodes, and the second electrode comprises a fourth patch electrode attached to a side of the second substrate facing the adjustable dielectric layer, wherein the orthographic projections of each of the fifth ground electrodes and the fifth signal electrode on the first substrate respectively at least partially overlap with the orthographic projection of the fourth patch electrode on the first substrate to form the adjustable capacitor.An electronic device comprising: - an adjustable phase shifter according to any one of claims 1 to 13, a radiation antenna, a power division network and a feed network arranged in an array.A method for manufacturing an adjustable phase shifter according to any one of claims 1 to 13, comprising: - forming a pattern of the first electrode on a side of the first substrate and forming a pattern of the second electrode on a side of the second substrate using a plating process; - forming the adjustable dielectric layer between the first substrate and the second substrate such that the adjustable capacitor is formed in the overlap region of the first electrode and the second electrode.The method of claim 15, wherein forming a pattern of the first electrode on a side of the first substrate using a electroplating process comprises: - depositing an entire first seed layer on a side of the first substrate; - forming an entire first metal film layer on a side of the first seed layer opposite the first substrate using an electroplating process; - etching the first seed layer and the first metal film layer using a patterning process to form the pattern of the first electrode.The method of claim 15, wherein forming a pattern of the second electrode on a side of the second substrate using a electroplating process comprises: - depositing an entire second seed layer on a side of the second substrate; - forming an entire second metal film layer on a side of the second seed layer opposite the second substrate using an electroplating process; - etching the second seed layer and the second metal film layer using a patterning process to form the pattern of the second electrode.

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