Flexible transparent electronic device, laminated glass, and method for producing a flexible transparent electronic device

Abstract

A flexible transparent electronic device (100) comprises: a flexible transparent substrate (10); a semiconductor element (20) arranged on a main surface of the flexible transparent substrate (10) and having an area of ​​1,000,000 µm 2or smaller; a wiring line (40) connected to the semiconductor element (20); and a protective layer (50) made of a transparent resin and covering the semiconductor element (20) and the wiring line (40) arranged on the flexible transparent substrate (10). The protective layer (50) comprises an optically transparent adhesive layer (51) directly covering the semiconductor element (20) and the wiring line (40); a transparent resin substrate (52) connected to the flexible transparent substrate (10) with the optically transparent adhesive layer (51) interposed therebetween, wherein the transparent resin substrate (52) has a storage elastic modulus at 25°C that is higher than that of the optically transparent adhesive layer (51). A thickness of the optically transparent adhesive layer (51) is greater than that of the semiconductor element (20) and is 100 µm or smaller.

Description

Technical area

[0001] The present invention relates to a flexible transparent electronic device, a laminated glass, and a method for manufacturing a flexible transparent electronic device. State of the art

[0002] As disclosed in Patent Document 1, the inventors develop a transparent display device in which light-emitting diode (LED) elements formed on a transparent substrate are used as pixels. Such a transparent display device is used, for example, for a windshield of an automobile because it is possible to observe a view or the like on the back of the transparent display device therethrough. Furthermore, as disclosed in Patent Document 1, the inventors also develop a transparent detection device in which microsensor(s) are provided on a transparent substrate.

[0003] In this specification, an electronic device such as a transparent display device and a transparent detection device in which semiconductor elements such as small LED elements or sensor elements are formed on a transparent substrate and through which a view or the like on the back side thereof can be observed is referred to as a "transparent electronic device." Regarding such a transparent electronic device, if the transparent substrate is flexible, a "flexible transparent electronic device" can be obtained.

[0004] As disclosed in Patent Document 1, when manufacturing a flexible transparent electronic device, a release layer, a flexible transparent substrate, and semiconductor elements are sequentially formed on a glass support substrate. Thereafter, the flexible transparent electronic device comprising the flexible transparent substrate and the semiconductor elements is peeled off from the glass support substrate.

[0005] Specifically, the release layer formed between the glass support substrate and the flexible transparent substrate is irradiated with UV (ultraviolet) laser light, so that the flexible transparent electronic device is released from the glass support substrate. The above-described method is called the LLO (Laser Lift-Off) method. Since the release layer is formed between the glass support substrate and the flexible transparent substrate, damage to the flexible transparent substrate (i.e., the flexible transparent electronic device) that would otherwise be caused by UV laser light irradiation can be prevented. Document listPatent documents

[0006] Patent Document 1: International Patent Publication No. WO 2021 / 132106 Summary of the inventionTechnical problem

[0007] The flexible transparent electronic device disclosed in Patent Document 1 includes a protective layer made of a transparent resin, covering semiconductor elements and wiring lines arranged on the main surface of the flexible transparent substrate. The inventors considered forming this protective layer from an optically transparent adhesive layer and a transparent resin substrate. The inventors found that if the thickness of the optically transparent adhesive layer is not appropriate, bubbles generated when the optically transparent adhesive layer is bonded to the flexible transparent substrate may remain even after manufacturing and / or cracks may occur during the LLO process, and as a result, wiring lines may break.

[0008] The present invention has been made in view of the above-described circumstances and provides a flexible transparent electronic device that can prevent generation of bubbles and cracks during manufacture. Solution to the problem

[0009] The present invention provides a flexible transparent electronic device having a structure described in the subject matter [1]. [1] Flexible transparent electronic device comprising: a flexible transparent substrate; a semiconductor element arranged on a main surface of the flexible transparent substrate and having an area of ​​1000000 µm 2 or smaller; a wiring line connected to the semiconductor element; and a protective layer made of a transparent resin and the semiconductor element and the wiring line arranged on the flexible transparent substrate, wherein the protective layer includes: an optically transparent adhesive layer directly covering the semiconductor element and the wiring line; a transparent resin substrate bonded to the flexible transparent substrate with the optically transparent adhesive layer interposed therebetween, the transparent resin substrate having a storage elastic modulus at 25°C higher than that of the optically transparent adhesive layer, and a thickness of the optically transparent adhesive layer is greater than that of the semiconductor element and is 100 µm or smaller. [2] Flexible transparent electronic device described in the subject matter [1], wherein a shear storage elastic modulus of the optically transparent adhesive layer at 25 °C is 10 4 Pa or higher and 10 7 Pa or lower and a tensile storage elastic modulus of the transparent resin substrate at 25 °C 10 8 Pa or higher and 10 10 Pa or lower. [3] The flexible transparent electronic device described in item [1] or [2], wherein the thickness of the optically transparent adhesive layer is greater than that of the flexible transparent substrate and is the same as or less than that of the transparent resin substrate. [4] A flexible transparent electronic device as described in any one of items [1] to [3], wherein the optically transparent adhesive layer contains one of an acrylic resin, a silicone resin and a urethane resin. [5] The flexible transparent electronic device described in any one of items [1] to [4], wherein the bending rigidity of the transparent resin substrate is higher than that of the flexible transparent substrate. [6] The flexible transparent electronic device described in any one of items [1] to [5], wherein heat shrinkage ratios of the transparent resin substrate in a machine direction and in a transverse direction when the transparent resin substrate is heated to 130 °C are both 0.2% or lower. [7] A flexible transparent electronic device described in any one of items [1] to [6], wherein a product of a tensile storage elastic modulus of the transparent resin substrate at 25 °C and the cube of a thickness of the transparent resin substrate is greater than 4.0 × 10 4 Pa · m 3 is. [8] Flexible transparent electronic device as described in any one of the items [1] to [7], wherein the semiconductor element is a light-emitting diode element having an area of ​​10000 µm 2 or smaller and the flexible transparent electronic device is a flexible transparent display device.

[0010] The present invention provides a laminated glass having a structure described in the subject matter [9]. [9] Laminated glass comprising: a pair of glass plates facing each other; a first intermediate film and a second intermediate film arranged between the pair of glass plates; and a flexible transparent electronic device disposed between the first and second intermediate films, wherein the flexible transparent electronic device comprises: a flexible transparent substrate; a semiconductor element arranged on a main surface of the flexible transparent substrate and having an area of ​​1000000 µm 2 or smaller; a wiring line connected to the semiconductor element; and a protective layer made of a transparent resin and covering the semiconductor element and the wiring line arranged on the flexible transparent substrate, wherein the protective layer includes: an optically transparent adhesive layer directly covering the semiconductor element and the wiring line; a transparent resin substrate bonded to the flexible transparent substrate with the optically transparent adhesive layer interposed therebetween, the transparent resin substrate having a storage elastic modulus at 25°C higher than that of the optically transparent adhesive layer, and a thickness of the optically transparent adhesive layer is greater than that of the semiconductor element and is 100 µm or smaller.

[10] Laminated glass as described in article [9], wherein a shear storage elastic modulus of the optically transparent adhesive layer at 25 °C is 10 4 Pa or higher and 10 7 Pa or lower and a tensile storage elastic modulus of the transparent resin substrate at 25 °C 10 8 Pa or higher and 10 10 Pa or lower.

[11] The laminated glass described in item [9] or

[10] , wherein the thickness of the optically transparent adhesive layer is greater than that of the flexible transparent substrate and is identical to or less than that of the transparent resin substrate.

[12] The laminated glass described in any one of items [9] to

[11] , wherein the optically transparent adhesive layer contains one of an acrylic resin, a silicone resin and a urethane resin.

[13] The laminated glass described in any one of items [9] to

[12] , wherein the bending rigidity of the transparent resin substrate is higher than that of the flexible transparent substrate.

[14] The laminated glass described in any one of items [9] to

[13] , wherein heat shrinkage ratios of the transparent resin substrate in a machine direction and in a transverse direction when the transparent resin substrate is heated to 130 °C are both 0.2% or lower.

[15] The laminated glass described in any one of items [9] to

[14] , wherein a product of a tensile storage elastic modulus of the transparent resin substrate at 25 °C and the cube of a thickness of the transparent resin substrate is greater than 4.0 × 10 -4 Pa· m 3 is.

[16] The laminated glass described in any one of items [9] to

[15] , wherein the transparent resin substrate is in close contact with the first intermediate film, and a 180-degree peel strength between the transparent resin substrate and the first intermediate film is 5 N / 20 mm or higher.

[17] Laminated glass as described in any one of the items [9] to

[16] , wherein the semiconductor element is a light-emitting diode element having an area of ​​10000 µm 2 or smaller and the flexible transparent electronic device is a flexible transparent display device.

[0011] The present invention provides a method for manufacturing a flexible transparent electronic device having a feature described in the subject matter

[18] .

[18] A method of manufacturing a flexible transparent electronic device, comprising: Arranging a semiconductor element with an area of ​​1,000,000 µm 2 or smaller on a flexible transparent substrate; Forming a wiring line connected to the semiconductor element; and Forming a protective layer made of a transparent resin and covering the semiconductor element and the wiring line arranged on the flexible transparent substrate, wherein the protective layer includes: an optically transparent adhesive layer directly covering the semiconductor element and the wiring line; a transparent resin substrate bonded to the flexible transparent substrate with the optically transparent adhesive layer interposed therebetween, the transparent resin substrate having a storage elastic modulus at 25°C higher than that of the optically transparent adhesive layer, and a thickness of the optically transparent adhesive layer is greater than that of the semiconductor element and is 100 µm or smaller. Advantageous effects of the invention

[0012] According to the present invention, a flexible transparent electronic device can be provided which prevents generation of bubbles and cracks during manufacture. Short description of the drawings Fig. 1 is a schematic partial plan view showing an example of a flexible transparent display device; Fig.Figure 2 is a cross-sectional diagram along a section line II-II shown in the Fig. 1 is shown; Fig. 3 is a cross-sectional diagram showing an example of a method for manufacturing a flexible transparent display device according to a first embodiment; Fig. 4 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 5 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 6 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig.7 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 8 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 9 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 10 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 11 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig.12 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 13 is a cross-sectional diagram showing an example of the method for manufacturing the flexible transparent display device according to the first embodiment; Fig. 14 is a schematic plan view showing an example of a laminated glass according to a second embodiment; Fig. 15 is a schematic cross-sectional diagram showing an example of the laminated glass according to the second embodiment; Fig. 16 is a schematic partial plan view showing an example of a flexible transparent display device according to a third embodiment; Fig. Figure 17 is a schematic partial plan view showing an example of a flexible transparent detection device according to a fourth embodiment; and Fig. Figure 18 is a schematic cross-sectional diagram of a sensor 70. Description of embodiments

[0013] Specific embodiments to which the present invention is applied will be described in detail below with reference to the drawings. However, the present invention is not limited to the embodiments shown below. Furthermore, for clarity of explanation, the following description and drawings are simplified where appropriate.

[0014] The "transparent electronic device" in this specification refers to an electronic device in which semiconductor elements are formed on a transparent substrate and through which visual information, such as a person or a background located on the back, ie, the other side, of the electronic device can be viewed in a desired usage environment.

[0015] The "transparent display device" in this specification refers to a display device through which visual information, such as a person or background located on the back of the display device, can be viewed under a desired usage environment. It should be noted that whether or not viewing through the device or the like is possible is determined in a state where at least the display device is not displaying an image, that is, in a state where the display device is not powered. The "transparent display device" is a form of "transparent electronic device."

[0016] Accordingly, the "transparent sensing device" in this specification refers to a sensing device through which visual information, such as a person or background located on the back of the sensing device, can be viewed in a desired usage environment. The "sensing device" refers to a device that can capture various types of information using a sensor. The "transparent sensing device" is a form of "transparent electronic device."

[0017] The term "transparent" in this specification means that the visible light transmittance is 40% or higher, preferably 60% or higher, and more preferably 70% or higher. Furthermore, it may also mean that the transmittance is 5% or higher and the haze value is 10 or less. When the transmittance is 5% or higher, when viewing the exterior of a building or the like from the interior during the day, the exterior can be viewed with the same or greater brightness as the interior, thus ensuring sufficient visibility.

[0018] Furthermore, when the transmittance is 40% or higher, a view or the like on the back of the transparent display device can be easily viewed even if the brightness on the front side (that is, this side) of the transparent display device and that on the back side (that is, the other side) thereof are approximately identical. Furthermore, when the haze value is 10 or less, sufficient background contrast can be ensured.

[0019] “Transparent” does not impose any restriction as to whether a color is added or not, i.e. it can be colorless or colored.

[0020] It should be noted that transmittance represents a value (%) measured by a method according to ISO 9050. The turbidity represents a value measured by a method according to ISO 14782. (First embodiment)<Aufbau einer flexiblen transparenten Anzeigevorrichtung>

[0021] First, a structure of a flexible transparent display device manufactured by a method for manufacturing a flexible transparent display device according to a first embodiment will be described with reference to Fig. 1 and Fig. 2. The Fig. 1 is a schematic partial plan view showing an example of a flexible transparent display device. Fig. Figure 2 is a cross-sectional diagram along a section line II-II shown in the Fig. 1 is shown.

[0022] It should be noted that the right-handed orthogonal xyz coordinate system used in each of Fig. 1 and Fig. 2 is, of course, shown merely to explain the positional relationship between components. Generally, the positive direction on the z-axis is vertically upward, and the xy plane is a horizontal plane.

[0023] The flexible transparent display device 100, which is Fig. 1 and Fig. 2 is a flexible transparent electronic device comprising a flexible transparent substrate 10, light-emitting units 20, IC (integrated circuit) chips 30, wiring lines 40, and a protective layer 50. A display area 101 in the flexible transparent display device 100 shown in FIG. Fig. 1 is composed of a plurality of pixels and is an area in which an image is displayed.

[0024] It should be noted that the image contains text. As stated in the Fig. 1, the display area 101 is composed of a plurality of pixels arranged in a row direction (x-axis direction) and a column direction (y-axis direction). A part of the display area 101 is shown in the Fig.1, and a total of four pixels, ie, two pixels in each of the row direction and the column direction, are shown. It should be noted that one of the pixels PIX is indicated as being surrounded by a dash-dot line. Furthermore, the flexible transparent substrate 10 and the protective layer 50 shown in the Fig. 2 are shown in the Fig. 1 is omitted. Furthermore, although the Fig. 1 is a plan view, the light-emitting units 20 and the IC chips 30 are indicated by dots for easy understanding. <Planare Anordnung der lichtemittierenden Einheit 20, des IC-Chips 30 und der Verdrahtungsleitung 40>

[0025] First, the planar arrangement of light-emitting units 20, IC chips 30 and wiring lines 40 will be described with reference to the Fig. 1 described.

[0026] As it is in the Fig.1, pixels PIX, one of which is surrounded by the dot-dash line, are arranged in a matrix pattern at a pixel pitch Px in the row direction (x-axis direction) and a pixel pitch Py in the column direction (y-axis direction). It should be noted that, as shown in the Fig. 1, each pixel PIX includes a light-emitting unit 20 and an IC chip 30. That is, light-emitting units 20 and IC chips 30 are arranged in a matrix pattern at a pixel pitch Px in the row direction (x-axis direction) and a pixel pitch Py in the column direction (y-axis direction).

[0027] It should be noted that the arrangement of pixels PIX, ie, light-emitting units 20, is not limited to the matrix pattern as long as they are arranged in predetermined directions at predetermined pixel pitches.

[0028] As it is in the Fig.1, the light-emitting unit 20 includes at least one light-emitting diode element (hereinafter also referred to as an LED element) in each pixel PIX. That is, the flexible transparent display device is a display device in which LED element(s) is / are used in each pixel PIX, and is thus referred to as an LED display or the like.

[0029] In the example shown in the Fig. As shown in Figure 1, each light-emitting unit 20 includes a reddish LED element 21, a greenish LED element 22, and a bluish LED element 23 as semiconductor elements. The LED elements 21 to 23 correspond to subpixels constituting one pixel. As described above, the flexible transparent display device can display a color image because each light-emitting unit 20 includes LED elements 21 to 23 that emit red, green, and blue, the three primary colors of light.

[0030] It should be noted that each light-emitting unit 20 may comprise two or more LED elements with similar colors. This allows the dynamic range of images to be expanded.

[0031] Each of the LED elements 21 to 23 is a so-called micro-LED element, which is, for example, a semiconductor chip or a semiconductor element with an area of ​​10000 µm 2 or smaller. Specifically, each of the width (length in the x-axis direction) and the length (length in the y-axis direction) of the LED element 21 on the flexible transparent substrate 10 is, for example, 100 µm or shorter, preferably 50 µm or shorter, and more preferably 20 µm or shorter. The same applies to the LED elements 22 and 23. The lower limit of the width and length of the LED element is, for example, 3 µm or more due to various manufacturing conditions.

[0032] It should be noted that the dimensions, ie, the widths and lengths, of the LED elements 21 to 23 in the Fig. 1 are identical, but they may be different from each other.

[0033] Furthermore, an area occupied by each of the LED elements 21 to 23 on the flexible transparent substrate 10 is preferably 3000 µm 2 or smaller and more preferably 500 µm 2 or smaller. It should be noted that the lower limit of the area occupied by an LED element may be, for example, 10 µm due to different manufacturing conditions. 2 or more. It should be noted that in this description, the area of ​​an LED element or the area of ​​a mounting element such as a wiring line refers to an area defined by the LED element or the mounting element such as a wiring line in the xy plane view shown in the Fig.1 is taken.

[0034] It should be noted that the shape of each of the LED elements 21 to 23 shown in the Fig. 1 is rectangular (including square), but is not limited to any particular shapes.

[0035] It should be noted that each of the LED elements 21 to 23 has, for example, a mirror structure for efficiently emitting light to the viewing side. Therefore, the transmittance of each of the LED elements 21 to 23 is low, for example, about 10% or lower. However, as described above, the flexible transparent display device uses small LED elements 21 to 23, each having an area of, for example, 10,000 μm 2or smaller, as described above. Therefore, even when the flexible transparent display device is viewed from a short distance, such as about 10 cm to 2 m, the LED elements 21 to 23 are barely visible. Furthermore, the area in the display area 101 where the transmittance is low is narrow, so that the visibility on the back is excellent. In addition, the degree of freedom regarding the arrangement of the wiring lines 40 and the like is also high.

[0036] It should be noted that the "region in the display area 101 where the transmittance is low" is, for example, a region where the transmittance is 20% or lower. The same applies below.

[0037] Furthermore, since the LED elements 21 to 23 are used, each of which is small in size, the LED elements are hardly damaged even if the flexible transparent display device is curved. Therefore, the flexible transparent display device can be mounted on a curved transparent plate, such as a window glass for an automobile, or sandwiched between two curved transparent plates. It should be noted that since the flexible transparent substrate 10 is flexible (has flexibility), the flexible transparent display device can be curved.

[0038] The material of the LED elements 21 to 23 is not limited to any specific materials, but is, for example, an inorganic material. The material of the reddish LED element 21 is, for example, AlGaAs, GaAsP, GaP, or the like. The material of the greenish LED element 22 is, for example, InGaN, GaN, AlGaN, GaP, AlGaNP, ZnSe, or the like. The material of the bluish LED element 23 is, for example, InGaN, GaN, AlGaN, ZnSe, or the like.

[0039] The light emission efficiency, that is, the light conversion efficiency, of the LED elements 21 to 23 is, for example, 1% or higher, preferably 5% or higher, more preferably 15% or higher. When the light emission efficiency of the LED elements 21 to 23 is 1% or higher, sufficient luminance can be obtained even with the LED elements 21 to 23 each having a small size as described above, and the display device can be used even during the day. Furthermore, when the light emission efficiency of the LED element is 15% or higher, heat generation is prevented, so the LED elements can be easily enclosed within a laminated glass using a resin adhesive layer.

[0040] Each of the pixel pitches Px and Py is, for example, 100 to 3000 µm, preferably 180 to 1000 µm, and more preferably 250 to 400 µm. By setting the pixel pitches Px and Py within the above-described range, high transparency can be achieved while ensuring satisfactory display performance. Furthermore, a diffraction phenomenon that would otherwise be caused by light entering from the back of the flexible transparent display device can be prevented.

[0041] Further, the pixel density in the display area 101 of the flexible transparent display device is, for example, 10 ppi or higher, preferably 30 ppi or higher, more preferably 60 ppi or higher.

[0042] Furthermore, the area of ​​a pixel PIX is expressed as Px × Py. For example, the area of ​​a pixel is 1 × 10 4 µm 2 up to 9 × 10 6 µm 2 , preferably 3 × 104 up to 1 × 10 6 µm 2 , more preferably 6 × 10 4 up to 2 × 10 5 µm 2 By setting the area of ​​a pixel to a range of 1 × 10 4 µm 2 up to 9 × 10 6 µm 2 The transparency of the display device can be improved while ensuring satisfactory display performance. The area of ​​a pixel can be appropriately selected according to the size of the display region 101, its use, the viewing distance, or the like.

[0043] The ratio of the area occupied by the LED elements 21 to 23 to the area of ​​one pixel is, for example, 30% or lower, preferably 10% or lower, more preferably 5% or lower, even more preferably 1% or lower. When the ratio of the area occupied by the LED elements 21 to 23 to the area of ​​one pixel is 30% or lower, the transparency and visibility on the back are improved.

[0044] In the Fig.1, in each pixel, three LED elements 21 to 23 are arranged in a row in this order in the positive x-axis direction. However, their arrangement is not limited to this example. For example, the order in which the three LED elements 21 to 23 are arranged can be changed. Furthermore, the three LED elements 21 to 23 can be arranged in the y-axis direction. Alternatively, the three LED elements 21 to 23 can be arranged at the vertices of a triangle.

[0045] Furthermore, if each light-emitting unit 20 comprises a plurality of LED elements 21 to 23, as shown in the Fig.1, the distance between any two of the LED elements 21 to 23 in the light-emitting unit 20 is, for example, 100 µm or shorter, and preferably 10 µm or shorter. Furthermore, the LED elements 21 to 23 can be arranged so that they are in contact with each other. This makes it easy to use a common first power supply branch line 41a for all the LED elements, so that the aperture ratio can be improved.

[0046] It should be noted that although the orders in which the plurality of LED elements are arranged, the directions in which they are arranged, and the like in the light-emitting units 20 in the example shown in the Fig.1 are identical, they may be different from each other. Furthermore, in the case where each light-emitting unit 20 includes three LED elements that emit light at different wavelengths, the LED elements in some of the light-emitting units 20 may be arranged in the x-axis direction or the y-axis direction, and in other light-emitting units 20, the LED elements of the respective colors may be arranged at the vertices of a triangle.

[0047] In the example shown in the Fig.As shown in Figure 1, the IC chip 30 is a semiconductor element provided in each pixel PIX and drives the light-emitting unit 20. Specifically, the IC chip 30 is connected to each of the LED elements 21 to 23 by a drive line 45 and can drive the LED elements 21 to 23 individually. The IC chip 30 is, for example, a hybrid IC that includes an analog portion and a logic portion. The analog portion includes, for example, a current control circuit, a converter circuit, and the like.

[0048] It should be noted that one IC chip 30 may be arranged for a plurality of pixels, and each IC chip 30 may drive a plurality of pixels connected to these IC chips 30. For example, by arranging one IC chip 30 for every four pixels, the number of IC chips 30 can be reduced to a quarter of the number in the example shown in the Fig.1, so that the area occupied by the IC chips 30 can be reduced. Furthermore, the IC chips 30 are not indispensable. That is, the pixels can be driven by a driving method that does not use the IC chip 30, such as passive matrix driving or by using TFTs (thin film transistors), which are semiconductor elements, instead of the IC chips 30.

[0049] For example, the area of ​​the IC chip 30 is 100000 µm 2 or smaller, preferably 10000 µm 2 or smaller and more preferably 5000 µm 2 or smaller. Although the transmittance of the IC chips 30 is low, that is, about 20% or lower, the area in the display area 101 where the transmittance is low is made narrower by using the IC chips 30 having the size described above, so that the visibility on the back is improved.

[0050] In the case where TFTs are used instead of the IC chips 30, the area of ​​the TFT is, for example, 1000000 µm 2 or smaller and preferably 30000 µm 2 or smaller.

[0051] The wiring lines 40 according to this embodiment are wiring lines for a display, and, as shown in the Fig. 1, include a plurality of power supply lines 41, a plurality of ground lines 42, a plurality of row data lines 43, a plurality of column data lines 44, and a plurality of drive lines 45.

[0052] In the example shown in the Fig. As shown in Figure 1, the power supply lines 41, the ground lines 42, and the column data lines 44 extend, i.e., are wired, in the y-axis direction. Furthermore, the row data lines 43 extend, i.e., are wired, in the x-axis direction.

[0053] Furthermore, in each pixel PIX, the power supply line 41 and the column data line 44 are arranged on the negative x-axis side of the light-emitting unit 20 and the IC chip 30, while the ground line 42 is arranged on the positive x-axis side of the light-emitting unit 20 and the IC chip 30. Note that the power supply line 41 is arranged on the negative x-axis side of the column data line 44. Furthermore, in each pixel PIX, the row data line 43 is arranged on the negative y-axis side of the light-emitting unit 20 and the IC chip 30.

[0054] Furthermore, as stated in the Fig.1, the power supply line 41 comprises a first power supply branch line 41a and a second power supply branch line 41b (the details of which will be described later). The ground line 42 comprises a ground branch line 42a. The row data line 43 comprises a row data branch line 43a. The column data line 44 comprises a column data branch line 44a. These branch lines are divided into the Wiring lines 40 included.

[0055] As it is in the Fig.As shown in FIG. 1, each power supply line 41 extending in the y-axis direction is connected to the light-emitting unit 20 and the IC chip 30 of each of the pixels PIX arranged in parallel in the y-axis direction. Specifically, in each pixel PIX, the LED elements 21 to 23 are arranged in this order in the x-axis direction on the positive x-axis side of the power supply line 41. Therefore, the first power supply branch line 41a branched in the positive x-axis direction from the power supply line 41 is connected to the ends of the LED elements 21 to 23 on the positive y-axis side.

[0056] Furthermore, in each pixel PIX, the IC chip 30 is arranged on the negative y-axis side of the LED elements 21 to 23. Therefore, between the LED element 21 and the column data lines 44, the second power supply branch line 41b, which branches in the negative y-axis direction from the first power supply branch line 41a, extends in a straight line and is connected to the negative x-axis side of the positive y-axis side end of the IC chip 30.

[0057] As it is in the Fig. As shown in Figure 1, each ground line 42 extending in the y-axis direction is connected to the IC chip 30 of each of the pixels PIX arranged in parallel in the y-axis direction. Specifically, the ground branch line 42a, which branches in the negative x-axis direction from the ground line 42, extends in a straight line and is connected to the end of the IC chip 30 on the positive x-axis side.

[0058] It should be noted that the ground line 42 is connected to the LED elements 21 to 23 through the ground branch line 42a, the IC chips 30 and the drive line 45.

[0059] As it is in the Fig. As shown in Figure 1, each row data line 43 extending in the x-axis direction is connected to the IC chip 30 of each of the pixels PIX arranged in parallel in the x-axis direction (row direction). Specifically, the row data branch line 43a, which branches in the positive y-axis direction from the row data line 43, extends in a straight line and is connected to the end of the IC chip 30 on the negative y-axis side.

[0060] It should be noted that the row data line 43 is connected to the LED elements 21 to 23 through the row data branch line 43a, the IC chip 30 and the Control line 45 is connected.

[0061] As it is in the Fig. As shown in Figure 1, each column data line 44 extending in the y-axis direction is connected to the IC chip 30 of each of the pixels PIX arranged in parallel in the y-axis direction (column direction). Specifically, the column data branch line 44a, which branches in the positive x-axis direction from the column data line 44, extends in a straight line and is connected to the end of the IC chip 30 on the negative x-axis side thereof.

[0062] It should be noted that the column data line 44 is connected to the LED elements 21 to 23 through the column data branch line 44a, the IC chip 30 and the drive line 45.

[0063] In each pixel PIX, the drive line 45 connects the LED elements 21 to 23 to the IC chip 30. Specifically, in each pixel PIX, three drive lines 45 extend in the y-axis direction, and each of them connects the end of a respective one of the LED elements 21 to 23 on the negative y-axis side to the end of the IC chip 30 on the positive y-axis side thereof.

[0064] It should be noted that the arrangement of the power supply lines 41, the ground lines 42, the row data lines 43, the column data lines 44, their branch lines and the drive lines 45 shown in the Fig.1 is merely an example and may be modified as appropriate. For example, at least one of the power supply lines 41 and the ground lines 42 may extend in the x-axis direction instead of extending in the y-axis direction. Furthermore, the power supply lines 41 and the column data lines 44 may be interchanged.

[0065] Furthermore, the entire structure, which is in the Fig. 1, can be flipped vertically or horizontally.

[0066] Furthermore, the row data lines 43, the column data lines 44, their branch lines and the control lines 45 are not indispensable.

[0067] The wiring lines 40 are made of, for example, a metal such as copper (Cu), aluminum (Al), silver (Ag), or gold (Au). From a cost perspective, it is preferable to use a metal composed mainly of copper or aluminum among the above-mentioned metals, both of which have a low specific resistance. Furthermore, the wiring lines 40 may be coated with a material such as titanium (Ti), molybdenum (Mo), copper oxide, or carbon to reduce reflectivity. Furthermore, irregularities may be formed on the surface of the coated material.

[0068] The width of each of the wiring lines 40 in the display area 101 shown in the Fig.1 is, for example, 1 to 300 μm, preferably 100 μm or smaller, and more preferably 3 to 20 μm. Since the width of each of the wiring lines 40 is 100 μm or smaller, the wiring lines 40 are hardly visible even when the transparent display device is viewed from a short distance of, for example, about 10 cm to 2 m, so that the visibility on the back is excellent. Furthermore, when the width of each of the wiring lines 40 is 1 μm or larger in the thickness range described later, an excessive increase in the resistance of the wiring line 40 can be prevented, so that a voltage drop and deterioration in signal strength can be prevented. Furthermore, deterioration in heat conduction due to the wiring lines 40 can be prevented.

[0069] It should be noted that, as stated in the Fig.As shown in Figure 1, when the wiring lines 40 extend predominantly in the x-axis direction and the y-axis direction, a transverse diffraction pattern extending in the x-axis direction and the y-axis direction may be generated by light entering from outside the flexible transparent display device, and the visibility on the back side of the flexible transparent display device may deteriorate. By reducing the width of each wiring line and thereby preventing this diffraction, the visibility on the back side is further improved. To prevent diffraction, the width of the wiring line 40 may be 50 μm or smaller, preferably 10 μm or smaller, more preferably 5 μm or smaller.

[0070] The specific electrical resistance of the wiring line 40 is, for example, 1.0 × 10 -6 Ωm or lower and preferably 2.0 × 10 -8Ωm or lower. Further, the thermal conductivity of the wiring line 40 is, for example, 150 to 5500 W / (m·K), and preferably 350 to 450 W / (m·K).

[0071] The distance between adjacent wiring lines 40 in the display area 101, which is shown in the Fig. 1 is, for example, 3 to 100 µm, and preferably 5 to 30 µm. If there is a region where wiring lines 40 are densely arranged, visibility on the back surface may be impaired. By setting the pitch between adjacent wiring lines 40 to 3 µm or more, such impairment of visibility can be prevented. On the other hand, by setting the pitch between adjacent wiring lines 40 to 100 µm or less, satisfactory display performance can be ensured.

[0072] It should be noted that in the case where distances between wiring lines 40 are not constant, for example, because wiring lines 40 are curved, the above-described distance between adjacent wiring lines 40 refers to the minimum value thereof.

[0073] The ratio of the area occupied by the wiring line 40 to the area of ​​one pixel is, for example, 30% or lower, preferably 10% or lower, more preferably 5% or lower, and even more preferably 3% or lower. The transmittance of the wiring line 40 is low, and is, for example, 20% or lower, or 10% or lower. However, when the ratio of the area occupied by the wiring line 40 in one pixel is 30% or lower, the area in the display region 101 where the transmittance is low is made narrower, so that the visibility on the back is improved.

[0074] Further, the total area occupied by the light-emitting unit 20, the IC chip 30, and the wiring line 40 relative to the area of ​​a substrate is, for example, 30% or lower, preferably 20% or lower, and more preferably 10% or lower. <Querschnittsstruktur einer flexiblen transparenten Anzeigevorrichtung>

[0075] Next, a cross-sectional structure of a flexible transparent display device will be described with reference to Fig. 2 described.

[0076] A flexible transparent substrate 10 is a transparent substrate with an insulating property. In the Fig. In the example shown in Figure 2, the flexible transparent substrate 10 has a two-layer structure composed of a main substrate 11 and an adhesive layer 12.

[0077] The main substrate 11 is, for example, a transparent resin layer based on epoxy, acrylic, olefin, polyimide, or novolak with a thickness of about 1 to 10 µm.

[0078] Corresponding to the main substrate 11, the adhesive layer 12 is, for example, a transparent epoxy-based, acrylic-based, olefin-based, polyimide-based, or novolak-based resin layer with a thickness of 3 µm or less. The adhesive layer 12 is, for example, a pre-curing adhesive, but may not be a post-curing adhesive. Furthermore, the main substrate 11 and the adhesive layer 12 may be made of the same resin material.

[0079] The tensile storage elastic modulus of the flexible transparent substrate 10 at 25 °C is approximately equal to that of the transparent resin substrate 52 (which will be described later) at 25 °C, and is, for example, 10 8 Pa or higher and 10 10 Pa or lower.

[0080] The total thickness of the flexible transparent substrate 10 is approximately 1 to 10 µm. The internal visible light transmittance of the flexible transparent substrate 10 is, for example, 50% or higher, preferably 70% or higher, more preferably 90% or higher.

[0081] Furthermore, since the flexible transparent substrate 10 is also flexible, the flexible transparent display device can be mounted on a curved transparent plate, for example, or arranged between two curved transparent plates.

[0082] As it is in the Fig. 2, the LED elements 21 to 23 and the IC chip 30 are provided on the flexible transparent substrate 10, ie, on the adhesive layer 12, and are connected to the wiring line 40 arranged on the flexible transparent substrate 10. In the Fig.2, the wiring line 40 is composed of a first metal layer M1 formed on the main substrate 11 and a second metal layer M2 formed on the adhesive layer 12.

[0083] The total thickness of the wiring line 40, that is, the total thickness of the first and second metal layers M1 and M2, is, for example, 0.1 to 10 µm, and preferably 0.5 to 5 µm. The thickness of the first metal layer M1 is, for example, about 0.5 µm, and the thickness of the second metal layer M2 is, for example, about 3 µm.

[0084] In particular, as stated in the Fig.2, the ground line 42 extending in the y-axis direction has a two-layer structure including the first and second metal layers M1 and M2, since the amount of current flowing through them is large. That is, at the part where the ground line 42 is provided, the adhesive layer 12 is removed, and the second metal layer M2 is formed on the first Metal layer M1 is formed. Although this is not in the Fig. 2, each of the power supply line 41, the row data line 43 and the column data line 44 shown in the Fig. 1 also has a two-layer structure comprising first and second metal layers M1 and M2.

[0085] It should be noted that, as stated in the Fig.1, the power supply line 41, the ground line 42, and the column data line 44 extending in the y-axis direction intersect the row data line 43 extending in the x-axis direction. Although this is shown in the Fig. 2, the row data line 43 is composed only of the first metal layer M1 at these intersections, while the power supply line 41, the ground line 42, and the column data line 44 are composed only of the second metal layer M2. Furthermore, the adhesive layer 12 is provided at the intersections between the first and second metal layers M1 and M2, so that the first and second metal layers M1 and M2 are insulated from each other.

[0086] Accordingly, at the intersection point of the column data line 44 and the first power supply branch line 41a shown in the Fig.1, the first power supply branch line 41a is composed only of the first metal layer M1, while the column data line 44 is composed only of the second metal layer M2.

[0087] Furthermore, in the example shown in the Fig. 2, the ground branch line 42a, the drive line 45 and the first power supply branch line 41a are composed only of the second metal layer M2 and are formed to cover the ends of the LED elements 21 to 23 and the IC chip 30. Although this is shown in the Fig. 2 is not shown, the second power supply branch line 41b, the row data branch line 43a and the column data branch line 44a are also composed of only the second metal layer M2.

[0088] It should be noted that, as described above, the first power supply branch line 41a is composed only of the first metal layer M1 at the intersection with the column data line 44, and is composed only of the second metal layer M2 in the other parts. Furthermore, a metal pad made of copper, silver, gold, or the like may be disposed on the wiring line 40 formed on the flexible transparent substrate 10. is formed, and at least one of the LED elements 21 to 23 and the IC chip 30 can be arranged on this metal pad.

[0089] The protective layer 50 is a transparent resin formed on substantially the entire surface of the flexible transparent substrate 10 so as to cover and protect the light-emitting unit 20, the IC chip 30, and the wiring line 40.

[0090] The protective layer 50 comprises an optically transparent adhesive layer 51 and a transparent resin substrate 52.

[0091] The optically transparent adhesive layer 51 is an optically transparent adhesive (OCA) layer that directly covers the light-emitting unit 20, the IC chip 30, and the wiring line 40. The optically transparent adhesive layer 51 is a transparent resin layer made of, for example, an acrylic resin, a silicone resin, a urethane resin, or the like.

[0092] The transparent resin substrate 52 is a transparent resin layer bonded to the flexible transparent substrate 10 with the optically transparent adhesive layer 51 disposed therebetween.

[0093] Examples of transparent resins from which the transparent resin substrate 52 is made include polyester-based resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), olefin-based resins such as cycloolefin polymer (COP) and cycloolefin copolymer (COC), cellulose-based resins such as cellulose, acetylcellulose and triacetylcellulose (TAC), imide-based resins such as polyimide (PI), amide-based resins such as polyamide (PA), amide-imide-based resins such as polyamideimide (PAI), carbonate-based resins such as polycarbonate (PC), sulfone-based resins such as polyethersulfone (PES), para-xylene-based resins such as poly-para-xylene, vinyl-based resins such as polyethylene (PE), polyvinyl chloride (PVC), polystyrene (PS), Polyvinyl acetate (PVAc), polyvinyl alcohol (PVA) and polyvinyl butyral (PVB), acrylic resins such as polymethyl methacrylate (PMMA), urethane resins such asEthylene-vinyl acetate copolymerization resin (EVA) and thermoplastic polyurethane (TPU), and epoxy resins.

[0094] Of the above-mentioned materials used for the transparent resin substrate 52, polyethylene naphthalate (PEN) and polyimide (PI) are preferred for improving heat resistance. Furthermore, cycloolefin polymer (COP), cycloolefin copolymer (COC), triacetyl cellulose (TAC), acrylic resins such as polymethyl methacrylate (PMMA), polyvinyl butyral (PVB), and the like are preferred because their Birefringence indices are low, so that distortion and blurring of images viewed through the transparent substrate can be reduced.

[0095] The thickness of the optically transparent adhesive layer 51 is greater than those of the light-emitting unit 20 and the IC chip 30, which are semiconductor elements, so that they are completely covered. Therefore, the remaining bubbles generated when the optically transparent adhesive layer 51 is bonded to the flexible transparent substrate 10 can be prevented. Remaining bubbles make it impossible to reduce the stress during the LLO process and thus induce the generation of cracks in the flexible transparent substrate 10. Since the thicknesses of the light-emitting unit 20 and the IC chip 30 are, for example, about 1 to 10 μm, the thickness of the optically transparent adhesive layer 51 is 10 μm or greater, and preferably 20 μm or greater.

[0096] Furthermore, the thickness of the optically transparent adhesive layer 51 is 100 µm or less, and preferably 50 µm or less. When the thickness of the optically transparent adhesive layer 51 is 100 µm or less, the occurrence of cracks during the LLO process can be prevented.

[0097] Furthermore, the thickness of the optically transparent adhesive layer 51 is, for example, larger than that of the flexible transparent substrate 10 and smaller than that of the transparent resin substrate 52.

[0098] The thickness of the transparent resin substrate 52 is, for example, 30 to 300 µm, preferably 50 to 250 µm, and more preferably 100 to 200 µm.

[0099] The shear storage elastic modulus of the optically transparent adhesive layer 51 at 25 °C is, for example, 10 4 Pa or higher and 10 7 Pa or lower, preferably 10 6 Pa or lower and more preferably 10 5Pa or lower. It should be noted that the optically transparent adhesive layer 51 has a tensile storage elastic modulus (at 25 °C) of less than 10 8 Pa can have.

[0100] For example, the tensile storage elastic modulus of the transparent resin substrate 52 at 25 °C is 10 8 Pa or higher and 10 10 Pa or lower. That is, the storage elastic modulus of the transparent resin substrate 52 at 25°C is greater than that of the optically transparent adhesive layer 51.

[0101] For example, the tensile storage modulus of elasticity at 25 °C is measured according to JIS K 7244-4:1999 and the shear storage modulus of elasticity at 25 °C is measured according to JIS K 7244-7:1999.

[0102] The total internal transmittance of the protective layer 50 for visible light is, for example, 50% or higher, preferably 70% or higher, and more preferably 90% or higher.

[0103] The flexural rigidity of the transparent resin substrate 52 is preferably greater than that of the flexible transparent substrate 10. The above-described features improve the overall flexural rigidity of the flexible transparent display device.

[0104] Furthermore, the heat shrinkage ratios of the transparent resin substrate 52 in the machine direction (MD) and in the transverse direction (TD) when the transparent resin substrate 52 is heated to 130°C are both 0.2% or lower. With the above-described features, wrinkles that would otherwise be caused in the wiring lines 40 formed on the transparent resin substrate 52 during the heating step in the manufacture of the laminated glass (which will be described later in a second embodiment) can be prevented.

[0105] The heat shrinkage ratio can be measured, for example, by a method used in examples described later.

[0106] Furthermore, the product of the tensile storage elastic modulus of the transparent resin substrate 52 at 25 °C and the cube of the thickness of the transparent resin substrate 52 is preferably greater than 4.0 × 10 4 [Pa · m 3 ]. It should be noted that the product of the tensile storage elastic modulus of the transparent resin substrate 52 at 25°C and the cube of the thickness of the transparent resin substrate 52 is proportional to the bending rigidity of the transparent resin substrate 52. With the above-described features, in the case where the laminated glass described in the second embodiment is a bent glass, wrinkles that would otherwise be caused in the transparent resin substrate 52 can be prevented.

[0107] It should be noted that although this is Fig. 1 and Fig. 2, the wiring lines 40 are connected, for example, to a ribbon-like flexible wiring board for supplying power at the end of the flexible transparent display device 100. Since the flexible wiring board is thick, it is difficult to cover it with the protective layer 50. Therefore, recess(es) are provided in the protective layer 50 at the connecting part of the flexible wiring board in the flexible transparent Display device 100 is provided. Then, the gap(s) between the recess(es) of the protective layer 50 and the flexible wiring board are filled with a resin. With the above-described features, the occurrence of cracks in the main substrate 11 and the like near the connecting part of the flexible wiring board during the LLO process described later can be prevented. <Verfahren zur Herstellung einer flexiblen transparenten Anzeigevorrichtung>

[0108] Next, an example of a method for manufacturing a flexible transparent display device according to the first embodiment will be described with reference to FIG. Fig. 3 to 13. The Fig. 3 to 13 are cross-sectional diagrams showing an example of a method for manufacturing a flexible transparent display device according to the first embodiment. Each of Fig. 3 to 13 is a cross-sectional diagram showing the Fig. 2 corresponds.

[0109] First, as stated in the Fig. 3, a release layer 2 and a main substrate 11 are sequentially formed on approximately the entire surface of a glass support substrate 1. The glass support substrate 1, the release layer 2, and the main substrate 11 will be described below.

[0110] The glass support substrate 1 is a glass substrate for supporting and transporting a flexible transparent display device 100 to be formed on the glass support substrate 1.

[0111] The release layer 2 is provided for releasing the flexible transparent display device 100 from the glass support substrate 1, as described later. The resin composition for forming the release layer 2 contains, for example, a UV (ultraviolet) curable resin and a UV absorber for absorbing UV laser light for release. Furthermore, this resin composition may also contain a photopolymerization initiator.

[0112] As it is in the Fig.As shown in Figure 13, when the release layer 2 is irradiated with a UV laser beam LB, the UV absorber absorbs the UV laser beam, so that part or all of the release layer 2 is decomposed. As a result, the flexible transparent display device 100 is released from the glass support substrate 1.

[0113] In this process, since the release layer 2 absorbs the UV laser beam LB, the UV laser beam LB hardly reaches the flexible transparent substrate 10. Therefore, damage to the flexible transparent substrate 10, which would otherwise be caused by the irradiation of the UV laser beam LB, and damage to the semiconductor element and the like, which would otherwise be caused by the stress thereon, can be prevented.

[0114] The main substrate 11 is formed, for example, by coating the release layer 2 with a resin composition for forming the main substrate 11 and curing the resin composition.

[0115] It should be noted that a main substrate of film or foil type 11 can be bonded to the release layer 2.

[0116] Next, as stated in the Fig. 4, a first metal layer M1 is formed on approximately the entire surface of the main substrate 11, and then the first metal layer M1 is patterned by photolithography to form lower-layer wiring lines. Specifically, lower-layer wiring lines are formed by the first metal layer M1 at positions where the power supply line 41, the ground line 42, the row data line 43, the column data line 44, and the like shown in FIG. Fig. 1 are shown.

[0117] It should be noted that the lower layer wiring lines are not formed at the intersection points of the power supply line 41, the ground line 42, and the column data line 44 with the row data line 43.

[0118] Next, as stated in the Fig. 5, an adhesive layer 12 is formed on approximately the entire surface of the main substrate 11, and then LED elements 21 to 23 and an IC chip 30 are mounted on the formed adhesive layer 12.

[0119] Next, as stated in the Fig.6, a photoresist FR1 is formed on approximately the entire surface of the flexible transparent substrate 10, including the main substrate 11 and the adhesive layer 12, and then the photoresist FR1 on the first metal layer M1 is partially removed by patterning. It should be noted that parts of the photoresist FR1 located at the intersections of the power supply line 41, the ground line 42, and the column data line 44 with the row data line 43, as shown in Fig. 1 are shown, are not to be removed.

[0120] Next, as stated in the Fig. 7, parts of the adhesive layer 12 located at the parts where the photoresist FR1 has been removed are removed by dry etching, so that the first metal layer M1, ie, the wiring lines of the lower layer, are exposed there.

[0121] Next, as stated in the Fig.8, the photoresist FR1 on the flexible transparent substrate 10 is completely removed. Thereafter, a seed layer for plating (not shown) is formed on approximately the entire surface of the flexible transparent substrate 10.

[0122] Next, as stated in the Fig. 9, a photoresist FR2 is formed on approximately the entire surface of the flexible transparent substrate 10, and then parts of the photoresist FR2 located at the parts where upper layer wiring lines are to be formed are removed by patterning so that the seed layer is exposed there.

[0123] Next, as stated in the Fig.As shown in Figure 10, a second metal layer M2 is formed by plating on the portions where the photoresist FR2 has been removed, that is, on the exposed seed layer. Thus, the wiring lines of the upper layer are formed by the second metal layer M2.

[0124] Next, as stated in the Fig. 11, the photoresist FR2 is removed. Furthermore, the portions of the seed layer exposed by the removal of the photoresist FR2 are removed by etching.

[0125] Next, as stated in the Fig.12, a protective layer 50 composed of an optically transparent adhesive layer 51 and a transparent resin substrate 52 is formed on approximately the entire surface of the flexible transparent substrate 10. That is, the transparent resin substrate 52 is bonded to the flexible transparent substrate 10 with the optically transparent adhesive layer 51 interposed therebetween. As a result, a flexible transparent display device 100 is formed on the glass support substrate 1 with the release layer 2 interposed therebetween.

[0126] Finally, as stated in the Fig.As shown in Fig. 13, a UV laser beam LB, such as an excimer laser beam, is applied from the underside of the glass support substrate 1 in the drawing, and the flexible transparent display device 100 formed on the glass support substrate 1 is peeled off from the glass support substrate 1. The peeling layer 2 is decomposed by the UV laser beam LB having passed through the glass support substrate 1, so that the flexible transparent display device 100 can be peeled off from the glass support substrate 1.

[0127] For example, by scanning with a line-shaped UV laser beam LB, the UV laser beam LB can be applied to the entire surface of the glass carrier substrate 1 For example, an excimer laser beam with a wavelength of 308 nm (XeCl) or a wavelength of 248 nm (KrF) is used as the UV laser beam LB.

[0128] Parts of the release layer 2 remaining in the flexible transparent display device 100 (in particular in the flexible transparent substrate 10) after the release process are removed, for example, by an alkaline solution.

[0129] The flexible transparent display device 100 can be manufactured through the series of steps described above.

[0130] In the method for manufacturing a flexible transparent display device according to this embodiment, the release layer 2, which absorbs a UV laser beam LB, is formed between the glass support substrate 1 and the flexible transparent substrate 10. When the UV laser beam LB is applied, the release layer 2, rather than the flexible transparent substrate 10, is decomposed, so that the flexible transparent display device 100 is released from the glass support substrate 1. Furthermore, since the release layer 2 absorbs the UV laser beam LB, the UV laser beam LB hardly reaches the flexible transparent substrate 10. Therefore, damage to the flexible transparent substrate 10, which would otherwise be caused by irradiation with the UV laser beam, and damage to the semiconductor element and the like, which would otherwise be caused by stress thereon, can be prevented. (Second embodiment) <Struktur eines laminierten Glases, das die flexible transparente Anzeigevorrichtung umfasst>

[0131] Next, a structure of the laminated glass according to a second embodiment will be described with reference to Fig. 14 and Fig. 15. The Fig. 14 is a schematic plan view showing an example of a laminated glass according to the second embodiment. Fig. Fig. 15 is a schematic cross-sectional diagram showing an example of a laminated glass according to the second embodiment. The laminated glass 200 shown in Fig. 14 and Fig. 15 is used from window panes of a motor vehicle to a windshield thereof, but its use is not limited to any specific applications.

[0132] First, a planar structure of the laminated glass 200 is described with reference to the Fig. 14 described.

[0133] As it is in the Fig. 14, for example, a black shielding portion 201 is formed on the entire peripheral edge of the laminated glass 200 The shielding portion 201 blocks sunlight and protects an adhesive for mounting the laminated glass 200 on a motor vehicle from UV rays. Furthermore, the adhesive is not visible from the outside due to the shielding portion 201.

[0134] As it is in the Fig. 14, the flexible transparent display device 100 comprises, in addition to the display area 101 shown in the Fig.1, a non-display area 102 is provided on the edge of the display area. It should be noted that, as described in the first embodiment, the display area 101 is composed of a large number of pixels and is an area where an image is displayed, so its detailed description will be omitted.

[0135] It should be noted that although the Fig. 14 is a plan view, the non-display area 102 and the shielding portion 201 are indicated by dots for easy understanding.

[0136] The non-display area 102 does not include any pixels and is therefore an area where no image is displayed. In the non-display area 102, wiring lines with large widths are provided, which are connected to the power supply lines 41, the ground lines 42, the row data lines 43, and the column data lines 44, which are arranged in the Fig.1 are densely provided. The widths of wiring lines in the non-display area 102 are, for example, 100 to 10,000 µm, and preferably 100 to 5,000 µm. The pitch between wiring lines is, for example, 3 to 5,000 µm, and preferably 50 to 1,500 µm.

[0137] Therefore, while the display area 101 is transparent, the non-display area 102 is opaque and visible from the interior of the vehicle. It should be noted that if the non-display area 102 is visible, the design of the laminated glass 200 is affected. Therefore, in the laminated glass 200 according to the second embodiment, at least a part of the non-display area 102 of the flexible transparent display device 100 is provided in the shielding portion 201. The part of the non-display area 102 provided in the shielding portion 201 is hidden by the shielding portion 201 so that it is not visible. Therefore, the design of the laminated glass 200 is improved compared to the case where the entire non-display area 102 is visible.

[0138] Next, the cross-sectional structure of the laminated glass 200 is described with reference to the Fig. 15. The Fig. 15 is a cross-sectional diagram of the display area 101 of the flexible transparent display device 100.

[0139] As it is in the Fig. As shown in Figure 15, the laminated glass 200 according to the second embodiment is formed by laminating a pair of glass plates 220a and 220b one above the other with intermediate films 210a and 210b interposed therebetween. Furthermore, the laminated glass 200 includes the flexible transparent display device 100 according to the first embodiment between the pair of glass plates 220a and 220b, with the intermediate films 210a and 210b interposed therebetween.

[0140] The intermediate films 210a and 210b are made, for example, of polyvinyl butyral (PVB), an ethylene-vinyl acetate copolymer resin (EVA) or a cycloolefin polymer (COP).

[0141] The intermediate film (first intermediate film) 210a is in close contact with the transparent resin substrate 52 of the protective layer 50. Further, the intermediate film (second intermediate film) 210b is in close contact with the main substrate 11 of the flexible transparent substrate 10.

[0142] It should be noted that, as described above, the heat shrinkage ratios of the transparent resin substrate 52 in the machine direction and in the transverse direction when the transparent resin substrate 52 is heated to 130°C are preferably both 0.2% or lower. With the above-described features, wrinkles that would otherwise be caused in the wiring lines 40 during the heating step (e.g., 130°C × 60 minutes) in the manufacture of the laminated glass can be prevented.

[0143] Furthermore, a 180-degree peel strength between the transparent resin substrate 52 and the intermediate film 210a is preferably 5 N / 20 mm or higher. With the above-described features, wrinkles that would otherwise be caused in the wiring lines 40 during the heating step (e.g., 130°C × 60 minutes) in the manufacture of the laminated glass can be prevented, and peeling between the transparent resin substrate 52 and the intermediate film 210a that would otherwise be caused after manufacture can be prevented.

[0144] For example, the 180 degree peel strength is measured according to JIS K 6854-2:1999.

[0145] Furthermore, the product of the tensile storage elastic modulus of the transparent resin substrate 52 at 25 °C and the cube of the thickness of the transparent resin substrate 52 is preferably greater than 4.0 × 10 -4 [Pa · m 3]. It should be noted that the product of the tensile storage elastic modulus of the transparent resin substrate 52 at 25°C and the cube of the thickness of the transparent resin substrate 52 is proportional to the bending rigidity of the transparent resin substrate 52. With the features described above, when the laminated glass is a curved glass, wrinkles that would otherwise be caused in the transparent resin substrate 52 can be prevented.

[0146] In the case where the area of ​​the flexible transparent display device 100 is smaller than the area of ​​each of the glass plates 220a and 220b, a mounting region in which the flexible transparent display device 100 is provided and a non-mounting region in which the flexible transparent display device 100 is not provided are formed. If the total thickness of the intermediate films 210a and 210b in the mounting region is identical to that in the non-mounting region, stress is caused in the glass plates 220a and 220b due to the difference in the thickness of the interior of the laminated glass 200, so there is a risk that the glass plates 220a and 220b will break. Furthermore, the stress is concentrated at the end of the flexible transparent display device 100, so there is a risk that the flexible transparent display device 100 will be damaged.Therefore, such breakage and damage can be prevented by making the total thickness of the intermediate films 210a and 210b in the mounting area smaller than that of the intermediate films 210a and 210b in the non-mounting area.

[0147] The difference between the thickness of the interior of the glass plates 220a and 220b in the mounting area (i.e., the total thickness of the flexible transparent display device 100 and the intermediate films 210a and 210b) and that of the interior of the glass plates 220a and 220b in the non-mounting area (i.e., the total thickness of the intermediate films 210a and 210b) is preferably 200 μm or less, and more preferably 100 μm or less. Furthermore, the difference is preferably 40 μm or less, so that perspective distortion can be prevented. (Third embodiment)<Aufbau der flexiblen transparenten Anzeigevorrichtung>

[0148] Next, the structure of a flexible transparent display device according to a third embodiment will be described with reference to FIG. Fig. 16. The Fig. Fig. 16 is a schematic partial plan view showing an example of a flexible transparent display device according to the third embodiment. As shown in Fig. 16, the flexible transparent display device according to this embodiment includes, in addition to the structure of the flexible transparent display device according to the first embodiment shown in the Fig. 1, a sensor 70, which is a semiconductor element, in the display area 101.

[0149] In the Fig.In the example shown in Fig. 16, the sensor 70 is provided between certain pixels PIX and connected to the power supply line 41 and the ground line 42. Further, detection data obtained by the sensor 70 is output through a data output line 46 extending in the y-axis direction from the sensor 70. Further, a control signal is input to the sensor 70 through a control signal line 47 extending in the y-axis direction to the sensor 70, so that the sensor 70 is controlled by the control signal. Only one sensor 70 may be provided, or a plurality of sensors 70 may be provided. A plurality of sensors 70 may be arranged at predetermined intervals, for example, in the x-axis direction or in the y-axis direction.

[0150] In the following description, a case will be described where the flexible transparent display device according to this embodiment is mounted on a windshield of various window panes of a motor vehicle. That is, the flexible transparent display device according to this embodiment can also be applied to the laminated glass according to the second embodiment.

[0151] The sensor 70 is, for example, a light intensity sensor (e.g., a light-receiving element) for detecting light intensities inside and outside the vehicle. For example, the brightness of the display area 101 is controlled by the LED elements 21 to 23 according to the light intensities detected by the sensor 70. For example, the higher the light intensity outside the vehicle relative to the light intensity inside the vehicle, the more the brightness of the display area 101 is increased by the LED elements 21 to 23. The features described above further improve the visibility of the flexible transparent display device.

[0152] Furthermore, the sensor 70 may be an infrared sensor (e.g., a light-receiving element) or an image sensor (e.g., a CMOS (Complementary Metal-Oxide-Semiconductor) image sensor) for detecting the viewing direction of a viewer (e.g., the driver). For example, the flexible transparent display device is only driven when the sensor 70 has detected the viewing direction. In the case where, for example, the flexible transparent display device is used in the laminated glass, as shown in the Fig.14, the above-described feature is preferable because the flexible transparent display device does not block the viewer's view as long as the viewer is not looking at the flexible transparent display device. Alternatively, in the case where the sensor 70 is an image sensor, movement of the viewer can be detected, and the flexible transparent display device can be turned on or off, or its display screen can be changed based on the detected movement.

[0153] The rest of the structure is identical to that of the flexible transparent display device according to the first embodiment. (Fourth embodiment)<Aufbau einer flexiblen transparenten Erfassungsvorrichtung>

[0154] Next, the structure of a flexible transparent detection device according to a fourth embodiment will be described with reference to FIG. Fig. 17. The Fig.Fig. 17 is a schematic partial plan view showing an example of a flexible transparent detection device according to the fourth embodiment. The flexible transparent detection device shown in Fig. Fig. 17 is a flexible transparent electronic device having a structure obtained by adding a sensor 70 which is a semiconductor element instead of the light-emitting unit 20 and the IC chip 30 in each pixel PIX in the structure of the flexible transparent display device shown in the Fig. 1. That is, the flexible transparent detection device shown in the Fig. 17 does not include a light-emitting unit 20 and has no display function.

[0155] The sensor 70 is not limited to any particular sensors, but is incorporated in the flexible transparent sensing device shown in the Fig.17 is a CMOS image sensor. That is, the flexible transparent detection device shown in the Fig. 17, includes a photographing area 301 composed of a plurality of pixels PIX arranged in the row direction (x-axis direction) and in the column direction (y-axis direction), and thus has a photographing function. Fig. Figure 17 shows a part of the photographing area 301, and a total of four pixels, ie, two pixels in each of the row direction and the column direction, are shown. It should be noted that one of the pixels PIX is indicated by being surrounded by a dash-dot line. Furthermore, in Figure Fig. 17, the flexible transparent substrate 10 and the protective layer 50 are omitted, as shown in the Fig. 1 are omitted. Furthermore, although the Fig. 17 is a plan view, the sensor 70 is indicated by dots for easy understanding.

[0156] In the Fig. In the example shown in Figure 17, a sensor 70 is provided in each pixel PIX. Furthermore, the sensor 70 is arranged between the power supply line 41 and the ground line 42 extending in the y-axis direction and is connected to both. Furthermore, detection data obtained by the sensor 70 is output through a data output line 46 extending in the y-axis direction from the sensor 70. Furthermore, a control signal is input to the sensor 70 through a control signal line 47 extending in the y-axis direction to the sensor 70, so that the sensor 70 is controlled by the control signal. The control signal is, for example, a synchronization signal or a reset signal.

[0157] It should be noted that the power supply line 41 may be connected to a battery (not shown).

[0158] It should be noted that the Fig.Figure 18 is a schematic cross-sectional diagram of the sensor 70. The sensor 70, which is shown in the Fig. 18 is a back-illuminated CMOS image sensor. It should be noted that the sensor 70, which is an image sensor, is not limited to any particular sensor and may be a front-illuminated CMOS image sensor or a CCD (charge-coupled device) image sensor.

[0159] As it is in the Fig. As shown in Figure 18, each sensor 70 includes a wiring layer, a semiconductor substrate, color filters CF1 to CF3, and microlenses ML1 to ML3. Note that internal wiring lines IW are formed within the wiring layer. Furthermore, photodiodes PD1 to PD3 are formed within the semiconductor substrate.

[0160] A semiconductor substrate (e.g., a silicon substrate) is formed on the wiring layer. Internal wiring lines IW formed within the wiring layer connect wiring lines 40 (a power supply line 41, a ground line 42, a data output line 46, and a control signal line 47) to the photodiodes PD1 to PD3. When the photodiodes PD1 to PD3 are irradiated with light, currents are output from the photodiodes PD1 to PD3. Each of the currents output from the photodiodes PD1 to PD3 is amplified by an amplifier circuit (not shown) and output through the internal wiring line IW and the data output line 46.

[0161] The color filters CF1 to CF3 are formed on the photodiodes PD1 to PD3, respectively, which are formed within the semiconductor substrate. The color filters CF1 to CF3 are, for example, a red filter, a green filter, and a blue filter, respectively.

[0162] The microlenses ML1 to ML3 are arranged on the color filters CF1 to CF3, respectively. Light rays concentrated by the microlenses ML1 to ML3, which are convex lenses, enter the respective photodiodes PD1 to PD3 through the respective color filters CF1 to CF3.

[0163] The sensor 70 according to this embodiment is, for example, a microsensor with a small size, the area of ​​which on the flexible transparent substrate 10 is 500000 µm 2 or smaller. In other words, in this specification, the microsensor is a microsensor with a small size, the area of ​​which in a plan view is 250000 µm 2 or smaller. The area of ​​the sensor 70 is preferably 25000 µm 2 or smaller and more preferably 2500 µm 2 or smaller. It should be noted that the lower limit of the area of ​​the sensor 70 may be, for example, 10 µm due to different manufacturing conditions2 or larger.

[0164] It should be noted that although the shape of the sensor 70 shown in the Fig. 17 is rectangular, the shape is not limited to any particular shapes.

[0165] The flexible transparent detection device according to this embodiment can also be applied to the laminated glass according to the second embodiment. In the case where the flexible transparent detection device according to this embodiment is mounted on a windshield of various window panes of a vehicle (e.g., an automobile), an image of at least one of the inside and the outside of the vehicle can be detected by the sensor 70. That is, the flexible transparent detection device according to this embodiment functions as a dashboard camera.

[0166] It should be noted that only one sensor 70 may be provided in the flexible transparent sensing device according to the fourth embodiment. Furthermore, the sensor 70 in the flexible transparent sensing device according to the fourth embodiment is not limited to image sensors either. That is, the sensor 70 may be a light intensity sensor, an infrared sensor, or the like, as exemplified in the third embodiment. Further, the sensor 70 may be a radar sensor, a lidar sensor, or the like. A window pane for a vehicle on which a flexible transparent sensing device using such a sensor 70 is mounted can enable monitoring of, for example, the inside and / or the outside of the vehicle.

[0167] That is, the sensor 70 according to the fourth embodiment is not limited to any particular sensors, as long as it is a microsensor with a small size, the area of ​​which on the flexible transparent substrate 10 is 250000 µm 2 or smaller. For example, the sensor 70 may be a temperature sensor, a UV sensor, a radio wave sensor, a pressure sensor, a sound sensor, a speed / acceleration sensor, or the like.

[0168] The rest of the structure is identical to that of the flexible transparent display device according to the first embodiment. (Further embodiment)

[0169] Next, further embodiments will be described.

[0170] Although not shown in the drawings, the flexible transparent display device 100 according to the first embodiment can be bonded to one of the surfaces of a glass panel for a building or vehicle using an adhesive or the like. The glass panel in this case may be, for example, soda-lime glass or laminated glass with a thickness greater than 3 mm.

[0171] Furthermore, the flexible transparent display device 100, which is connected to this glass plate, can be covered with a protective substrate for protecting the flexible transparent display device 100. The protective substrate is, for example, a rectangular transparent substrate that is larger than the flexible transparent display device 100 and whose four sides are connected to the glass plate with an adhesive or a sealing material. The protective substrate can be a flexible substrate. Examples[Assessment of crack occurrence]

[0172] Examples according to the present invention are shown below, but the present invention is not limited to the examples shown below.

[0173] For each of Examples 1 to 11 shown in Table 1, whether or not cracks occurred during the LLO process was evaluated. Regarding evaluations regarding crack occurrence, Examples 1-4, 6-8, and 11 are examples according to the present invention, and Examples 5, 9, and 10 are comparative examples. Table 1] type Film thickness [µm] G'[Pa] G''[Pa] tanδ Assessment result Example 1 OCA1 10 23400 6030 0,258 Good Example 2 25 Good Example 3 OCA2 50 39700 23800 0,599 Good Example 4 100 Acceptable Example 5 175 Unacceptable Example 6 OCA3 25 26800 14400 0,536 Good Example 7 OCA4 50 13000 4790 0,369 Good Example 8 OCA5 100 28700000 15700000 0,546 Acceptable Example 9 OCA6 125 26300 14200 0,540 Unacceptable Example 10 OCA7 300 43900 14700 0,334 Unacceptable Example 11 OCA8 100 17500 5640 0,322 Acceptable

[0174] Table 1 collectively shows types, thicknesses (µm), shear storage moduli G' (Pa) at 25 °C, shear loss moduli G'' (Pa) at 25 °C, loss coefficients tanδ (= G'' / G') at 25 °C, and evaluation results (crack occurrence states) of optically transparent adhesive layers 51 according to Examples 1 to 11. In the evaluation results shown in Table 1, "Good" indicates that no crack occurred; "Acceptable" indicates that cracks occurred only at the end of the device; and "Unacceptable" indicates that cracks also occurred inside the device.

[0175] It should be noted that the elastic modulus in Example 8 was so high that its measurement in shear mode was difficult. Therefore, for Example 8, only values ​​for the tensile storage elastic modulus E' (Pa) at 25 °C, the tensile loss modulus E'' (Pa) at 25 °C, and the loss coefficient tanδ (= E'' / E') at 25 °C measured in tensile mode are given in Table 1. <Beispiel 1 >[Formation of a release layer 2 and a flexible transparent substrate 10]

[0176] First, a release layer 2 with a thickness of 3 μm and a flexible transparent substrate 10 with a thickness of 8 μm were sequentially formed on a glass support substrate 1 with a thickness of 0.7 mm by spin coating. A glass plate (AN-100) manufactured by AGC Inc. was used for the glass support substrate 1. A lift-off photoresist (LOR B) manufactured by Kayaku Advanced Materials, which is an alkali-soluble lift-off photoresist, was used for the release layer 2. An epoxy resin (InterVia 8023) manufactured by DowDuPont was used for the flexible transparent substrate 10. [Formation of a wiring line 40]

[0177] Next, a W-10Ti alloy film with a thickness of 0.1 µm and a metal layer comprising a Cu film with a thickness of 0.6 µm were formed in this order. The metal layer was then patterned by photolithography, thereby forming wiring lines 40.

[0178] It should be noted that the formation of a semiconductor element was omitted in Examples 1 to 11. [Formation of a protective layer 50]

[0179] A transparent resin substrate 52 was bonded to one of the main surfaces of the optically transparent adhesive layer 51, and a flexible transparent substrate 10 on which wiring lines 40 were formed was bonded to the other main surface of the optically transparent adhesive layer 51. That is, a protective layer 50 comprising the optically transparent adhesive layer 51 and the transparent resin substrate 52 was formed on the flexible transparent substrate 10.

[0180] As shown in Table 1, an optically transparent acrylic adhesive film 1 (OCA 1 in Table 1) with a thickness of 10 µm was used for the optically transparent adhesive layer 51. As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 23400 Pa; the shear loss modulus G'' at 25 °C was 6030 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.258.

[0181] A transparent PET film with a thickness of 125 µm (A4360) manufactured by Toyobo Co., Ltd. was used for the transparent resin substrate 52. [Removal of a thin resin film by the LLO process]

[0182] The release layer 2 was irradiated with a UV laser beam LB through the glass support substrate 1, and a laminate comprising the flexible transparent substrate 10 and the protective layer 50 was peeled off from the glass support substrate 1. An excimer laser annealing device manufactured by Lightec Inc. was used, and XeCl with an oscillation wavelength of 308 nm was used as the laser light source. The irradiation energy density of the UV laser beam LB was set to 750 mJ / cm 2 set.

[0183] It should be noted that parts of the release layer 2 remaining in the laminate were removed by an alkaline solution. [Evaluation procedure and evaluation result]

[0184] Through visual inspection and microscope examination, it was checked whether cracks occurred or not in the laminate that had been peeled off from the glass support substrate 1.

[0185] As shown in Table 1, no cracks caused by the LLO process were found in the laminate according to Example 1, and thus its evaluation result was good. <Beispiel 2>

[0186] As shown in Table 1, the laminate in Example 2 was prepared in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film 1 (OCA 1 in Table 1) having a thickness of 25 µm was used for the optically transparent adhesive layer 51.

[0187] As shown in Table 1, no cracks caused by the LLO process were found in the laminate according to Example 2, and thus its evaluation result was good. <Beispiel 3>

[0188] As shown in Table 1, the laminate in Example 3 was manufactured in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film 2 (OCA 2 in Table 1) with a thickness of 50 μm was used for the optically transparent adhesive layer 51. As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 39700 Pa; the loss modulus G'' at 25 °C was 23800 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.599.

[0189] As shown in Table 1, no cracks caused by the LLO process were found in the laminate according to Example 3, and thus its evaluation result was good. <Beispiel 4>

[0190] As shown in Table 1, the laminate in Example 4 was prepared in the same manner as that in Example 3, except that an optically transparent acrylic adhesive film 2 (OCA 2 in Table 1) having a thickness of 100 µm was used for the optically transparent adhesive layer 51.

[0191] As shown in Table 1, in the laminate according to Example 4, cracks caused by the LLO process were only observed at the end of the laminate, and thus its evaluation result was acceptable. <Beispiel 5>

[0192] As shown in Table 1, the laminate in Example 5 was prepared in the same manner as that in Example 3, except that an optically transparent acrylic adhesive film 2 (OCA 2 in Table 1) having a thickness of 175 µm was used for the optically transparent adhesive layer 51.

[0193] As shown in Table 1, in the laminate according to Example 5, cracks caused by the LLO process were observed not only at the end of the laminate but also inside the laminate, and thus its evaluation result was unacceptable. <Beispiel 6>

[0194] As shown in Table 1, the laminate in Example 6 was prepared in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film 3 (OCA 3 in Table 1) having a thickness of 25 µm was used for the optically transparent adhesive layer 51.

[0195] As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 26800 Pa; the shear loss modulus G'' at 25 °C was 14400 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.536. As shown in Table 1, no cracks caused by the LLO process were observed in the laminate according to Example 6, and thus its evaluation result was good. <Beispiel 7>

[0196] As shown in Table 1, the laminate in Example 7 was prepared in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film 4 (OCA 4 in Table 1) with a thickness of 50 μm was used for the optically transparent adhesive layer 51. As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 13000 Pa; the shear loss modulus G'' at 25 °C was 4790 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.369.

[0197] As shown in Table 1, no cracks caused by the LLO process were found in the laminate according to Example 7, and thus its evaluation result was good. <Beispiel 8>

[0198] As shown in Table 1, the laminate in Example 8 was prepared in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film of light-curing type 5 (OCA 5 in Table 1) with a thickness of 100 µm was used for the optically transparent adhesive layer 51 and was light-cured after forming a protective layer 50. As shown in Table 1, the tensile storage elastic modulus E' of this optically transparent adhesive film at 25°C after light-curing was 287,000,000 Pa; the gain modulus E'' at 25°C was 157,000,000 Pa; and the loss coefficient tanδ (= E'' / E') at 25°C was 0.546.

[0199] As shown in Table 1, in the laminate according to Example 8, cracks caused by the LLO process were observed only at the end of the laminate, and thus its evaluation result was acceptable. As described above, the optically transparent adhesive layer 51 according to Example 8 can be cured. Furthermore, although it has a higher elastic modulus than that of the optically transparent adhesive layers 51 according to other examples, the tensile storage elastic modulus E' at 25 °C after curing is lower than 10 8 Pa, so that it can be used as the optically transparent adhesive layer 51. <Beispiel 9>

[0200] As shown in Table 1, the laminate in Example 9 was prepared in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film 6 (OCA 6 in Table 1) with a thickness of 125 μm was used for the optically transparent adhesive layer 51. As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 26300 Pa; the shear loss modulus G'' at 25 °C was 14200 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.540.

[0201] As shown in Table 1, in the laminate according to Example 9, cracks caused by the LLO process were observed not only at the end of the laminate but also inside the laminate, and thus its evaluation result was unacceptable. <Beispiel 10>

[0202] As shown in Table 1, the laminate in Example 10 was prepared in the same manner as that in Example 1, except that an optically transparent urethane-based adhesive film 7 (OCA 7 in Table 1) with a thickness of 300 μm was used for the optically transparent adhesive layer 51. As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 43900 Pa; the shear loss modulus G'' at 25 °C was 14700 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.334.

[0203] As shown in Table 1, in the laminate according to Example 10, cracks caused by the LLO process were observed not only at the end of the laminate but also inside the laminate, and thus its evaluation result was unacceptable. <Beispiel 11 >

[0204] As shown in Table 1, the laminate in Example 11 was prepared in the same manner as that in Example 1, except that an optically transparent acrylic adhesive film 8 (OCA 8 in Table 1) with a thickness of 100 μm was used for the optically transparent adhesive layer 51. As shown in Table 1, the shear storage elastic modulus G' of this optically transparent adhesive film at 25 °C was 17500 Pa; the shear loss modulus G'' at 25 °C was 5640 Pa; and the loss coefficient tanδ (= G'' / G') at 25 °C was 0.322.

[0205] As shown in Table 1, in the laminate according to Example 8, cracks caused by the LLO process were only observed at the end of the laminate, and thus its evaluation result was acceptable.

[0206] Based on the evaluation results of Examples 1 to 11 shown in Table 1, it was found that the occurrence of cracks during the LLO process could be prevented regardless of the shear storage elastic modulus G' and the like of the optically transparent adhesive layer 51 as long as the thickness of the optically transparent adhesive layer 51 was 100 μm or smaller. Furthermore, it was also found that the occurrence of cracks during the LLO process could be even better prevented when the thickness of the optically transparent adhesive layer 51 was 50 μm or smaller. [Evaluation of a bladder residue]

[0207] It should be noted that with respect to the optically transparent adhesive layers 51 of Examples 2, 3, and 11, it was also separately evaluated whether bubbles generated when the optically transparent adhesive layer 51 was bonded to the flexible transparent substrate 10 remained after production or not.

[0208] The transparent resin substrate 52 was bonded to one of the main surfaces of the optically transparent adhesive layer 51, and a glass plate on which protrusions made of a resin, each having a height of 48 μm and a diameter of 0.5 mm, were formed at regular intervals was bonded to the other main surface of the optically transparent adhesive layer 51. That is, a protective layer 50 comprising an optically transparent adhesive layer 51 and a transparent resin substrate 52 was formed on a glass plate on which protrusions had been formed. A glass plate (AN-100) manufactured by AGC Inc. with a thickness of 0.7 mm was used for the glass plate described above. A transparent PET film with a thickness of 125 μm (A4360) manufactured by Toyobo Co., Ltd. was used as the transparent resin substrate 52.

[0209] It should be noted that in this evaluation method, the glass plate corresponds to the flexible transparent substrate 10, and the protrusions correspond to the semiconductor elements formed on the flexible transparent substrate 10.

[0210] Furthermore, the bonded glass plate and the protective layer 50 were heated in an autoclave at 0.5 MPa and 50°C for 30 minutes. Afterward, the presence of residual bubbles around the protrusions was checked by visual inspection and microscopic examination.

[0211] Since the thickness of the optically transparent adhesive layer 51 according to Example 2 was 25 µm and was 23 µm smaller than the protrusions with the height (thickness) of 48 µm, residual bubbles were observed.

[0212] Since the thickness of the optically transparent adhesive layer 51 according to Example 3 was 50 µm and was 2 µm larger than the protrusions with the height (thickness) of 48 µm, residual bubbles were not observed, which shows that the optically transparent adhesive layer 51 was good.

[0213] Since the thickness of the optically transparent adhesive layer 51 according to Example 11 was 100 µm and was 52 µm larger than the protrusions with the height (thickness) of 48 µm, residual bubbles were not observed, which shows that the optically transparent adhesive layer 51 was good.

[0214] Based on these evaluation results, it was found that when the thickness of the optically transparent adhesive layer 51 is greater than that of the semiconductor element, the remaining of bubbles generated when the optically transparent adhesive layer 51 is bonded to the flexible transparent substrate 10 can be prevented. [Evaluation of the occurrence of wrinkles in a wiring line]

[0215] Next, in Examples 12 to 17 shown in Table 2, whether or not wrinkles appeared in wiring lines 40 during the production of the laminated glass was evaluated. In this evaluation of the occurrence of wrinkles in a wiring line, Examples 13 to 17 are examples according to the present invention, and Example 12 is a comparative example. [Table 2] material Film thickness [µm] MD heat shrinkage ratio [%] TD heat shrinkage ratio [%] 180 degree peel strength [N / 20mm] Assessment result Example 12 PET 125 0,53 0,47 22,6 Unacceptable Example 13 COP 40 0,04 -0,01 4,4 Acceptable Example 14 TAC 80 0,13 0,05 <1 Acceptable Example 15 Pl 50 0,01 0,03 20,0 Good Example 16 PEN 125 0,05 0,04 7,9 Good Example 17 PET (annealed material) 125 0,14 0,03 22,6 Good

[0216] Table 2 collectively shows materials, thicknesses (µm), heat shrinkage ratios (%) in the machine direction (MD: machine direction) and in the transverse direction (TD: transverse direction) when heated at 130°C, 180 degree peel strengths (N / 20 mm) for the PVB films, and evaluation results (conditions of occurrence of wrinkles in wiring lines 40) of the transparent resin substrates 52 according to Examples 12 to 17. In the evaluation results shown in Table 2, “Good” indicates that no wrinkles occurred in the wiring lines 40; “Acceptable” indicates that wrinkles occurred in the wiring lines 40 only at the end of the device; and “Unacceptable” indicates that wrinkles occurred in the wiring lines 40 also inside the device.

[0217] It should be noted that a 150 mm square test piece was cut out from each of the transparent resin substrates 52 according to Examples 12 to 17. Then, the length of each of the four sides of the test piece was measured before and after heating to 130 °C using the CNC image measuring machine Quick Vision manufactured by Mitutoyo Corporation, and heat shrinkage rates in the machine direction and in the transverse direction were calculated.

[0218] Further, for each of Examples 12 to 17, the transparent resin substrate 52 and the PVB film were heated at 1.0 MPa and 130°C for 60 minutes in an autoclave to bond them together. A narrow rectangular test strip with a width of 20 mm was prepared from the bonded transparent resin substrate 52 and the PVB film, and the 180-degree peel strength of the transparent resin substrate 52 and the PVB film was measured. <Beispiel 12>

[0219] Steps up to the formation of wiring lines 40 on the flexible transparent substrate 10 were identical to those in Example 1, and therefore their description is omitted.

[0220] Thereafter, a transparent resin substrate 52 was bonded to one of the main surfaces of the optically transparent adhesive layer 51, and a flexible transparent substrate 10 on which wiring lines 40 were formed was bonded to the other main surface of the optically transparent adhesive layer 51. That is, a protective layer 50 comprising the optically transparent adhesive layer 51 and the transparent resin substrate 52 was formed on the flexible transparent substrate 10.

[0221] For the optically transparent adhesive layer 51, an optically transparent adhesive film 1 (OCA 1 in Table 1) with a thickness of 25 μm, which was used in Example 2, was used. As shown in Table 2, a transparent PET film with a thickness of 125 μm (A4360) manufactured by Toyobo Co., Ltd. was used for the transparent resin substrate 52.

[0222] As shown in Table 2, the heat shrinkage ratio of this transparent PET film in the machine direction when heated to 130°C was 0.53%, and the heat shrinkage ratio in the transverse direction was 0.47%. Furthermore, the 180° peel strength for the PVB film was 22.6 N / 20 mm. [Removal of a thin resin film by the LLO process]

[0223] The release layer 2 was irradiated with a UV laser beam LB through the glass support substrate 1, and a laminate comprising the flexible transparent substrate 10 and the protective layer 50 was peeled off from the glass support substrate 1. An excimer laser annealing device manufactured by Lightec Inc. was used, and XeCl with an oscillation wavelength of 308 nm was used as the laser light source.

[0224] It should be noted that parts of the release layer 2 remaining in the laminate were removed by an alkaline solution. [Manufacturing a laminated glass]

[0225] A laminated glass was prepared by placing the laminate separated from the glass support substrate 1 between a pair of glass plates 220a and 220b, with a pair of intermediate films 210a and 210b interposed therebetween. A transparent PVB film with a thickness of 0.76 mm was used for each of the intermediate films 210a and 210b. A glass plate with a thickness of 3.0 mm, manufactured by AGC Inc., was used for each of the glass plates 220a and 220b.

[0226] Furthermore, this laminated glass was heated in an autoclave at 1.0 MPa and 130 °C for 60 minutes. [Evaluation procedure and evaluation result]

[0227] For the laminated glass that was pressurized and heated, the occurrence of wrinkles in the wiring line 40 was examined by visual inspection and microscope inspection.

[0228] As shown in Table 2, in the laminated glass according to Example 12, wrinkles in wiring lines 40 were observed not only in the end of the laminated glass but also inside the laminated glass, and thus its evaluation result was unacceptable. <Beispiel 13>

[0229] As shown in Table 2, the laminated glass in Example 13 was manufactured in the same manner as that in Example 12, except that a transparent COP film with a thickness of 40 μm was used for the transparent resin substrate 52. As shown in Table 2, the heat shrinkage ratio of this transparent COP film in the machine direction when heated at 130°C was 0.04%, and the heat shrinkage ratio in the transverse direction was -0.01%. Furthermore, the 180-degree peel strength for the PVB film was 4.4 N / 20 mm.

[0230] As shown in Table 2, in the laminated glass according to Example 13, wrinkles in wiring lines 40 were observed only at the end of the laminated glass, and thus its evaluation result was acceptable. <Beispiel 14>

[0231] As shown in Table 2, the laminated glass in Example 14 was manufactured in the same manner as that in Example 12, except that a transparent TAC film with a thickness of 80 μm was used for the transparent resin substrate 52. As shown in Table 2, the heat shrinkage ratio of this transparent TAC film in the machine direction when heated at 130°C was 0.13%, and the heat shrinkage ratio in the transverse direction was 0.05%. Furthermore, the 180-degree peel strength for the PVB film was less than 1 N / 20 mm.

[0232] As shown in Table 2, in the laminated glass according to Example 14, wrinkles in wiring lines 40 were observed only at the end of the laminated glass, and thus its evaluation result was acceptable. <Beispiel 15>

[0233] As shown in Table 2, the laminated glass in Example 15 was manufactured in the same manner as that in Example 12, except that a transparent PI film with a thickness of 50 μm was used for the transparent resin substrate 52. As shown in Table 2, the heat shrinkage ratio of this transparent PI film in the machine direction when heated at 130°C was 0.01%, and the heat shrinkage ratio in the transverse direction was 0.03%. Furthermore, the 180-degree peel strength for the PVB film was 20.0 N / 20 mm.

[0234] As shown in Table 2, no wrinkles were observed in wiring lines 40 in the laminated glass according to Example 15, and thus its evaluation result was good. <Beispiel 16>

[0235] As shown in Table 2, the laminated glass in Example 16 was manufactured in the same manner as that in Example 12, except that a transparent PEN film with a thickness of 125 μm was used for the transparent resin substrate 52. As shown in Table 2, the heat shrinkage ratio of this transparent PEN film in the machine direction when heated at 130°C was 0.05%, and the heat shrinkage ratio in the transverse direction was 0.04%. Furthermore, the 180-degree peel strength for the PVB film was 7.9 N / 20 mm.

[0236] As shown in Table 2, no wrinkles were observed in wiring lines 40 in the laminated glass according to Example 16, and thus its evaluation result was good. <Beispiel 17>

[0237] As shown in Table 2, the laminated glass in Example 17 was manufactured in the same manner as that in Example 12, except that a film obtained by annealing a transparent PET film (A4360) manufactured by Toyobo Co., Ltd. used in Example 12 at 130°C for 60 minutes was used as the transparent resin substrate 52. As shown in Table 2, the heat shrinkage ratio of this transparent PEN film in the machine direction when heated at 130°C was 0.14%, and the heat shrinkage ratio in the transverse direction was 0.03%. Furthermore, the 180-degree peel strength for the PVB film was identical to that in Example 12.

[0238] As shown in Table 2, no wrinkles were observed in wiring lines 40 in the laminated glass according to Example 17, and thus its evaluation result was good.

[0239] Based on the evaluation results of Examples 12 to 17 shown in Table 2, it was found that when the heat shrinkage ratios of the transparent resin substrate 52 in the machine direction and in the transverse direction when heated to 130°C are both 0.2% or lower, wrinkles that would otherwise be caused in the wiring lines 40 during the laminated glass manufacturing process can be prevented. Furthermore, it was also found that when the 180-degree peel strength of the transparent resin substrate 52 for the intermediate film 210a is 5 N / 20 mm or higher, wrinkles that would otherwise be caused in the wiring lines 40 during the laminated glass manufacturing process can be further prevented. [Evaluation of substrate folds]

[0240] Next, for each of the transparent resin substrates 52 according to Examples 14 to 17 shown in Table 2, it was also evaluated whether or not wrinkles occurred in the transparent resin substrate 52 when the laminated glass is a bent glass.

[0241] Table 3 shows together materials, thicknesses (µm), tensile storage moduli E' (Pa) at 25 °C, products E' × t 3 (Pa · m 3 ) of the tensile storage moduli E' at 25°C and the cube of thickness t, and evaluation results of the transparent resin substrates 52 according to Examples 14 to 17 (conditions of occurrence of wrinkles of the transparent resin substrates 52). In the evaluation results shown in Table 3, "Good" indicates that no wrinkles occurred in the transparent resin substrate 52, and "Unacceptable" indicates that wrinkles occurred in the transparent resin substrate 52.

[0242] For each of Examples 14 to 17, a laminated glass was prepared by placing the transparent resin substrate 52, which had been cut into 100 mm square, between a pair of glass plates 220a and 220b, with a pair of intermediate films 210a and 210b interposed therebetween. A glass plate with a thickness of 3.0 mm, manufactured by AGC Inc., was used for each of the glass plates 220a and 220b. Each of the glass plates 220a and 220b is a multi-curved glass. Further, the radius of curvature of two opposite sides of the four sides is R1000, and the radius of curvature of the other two opposite sides is R500.

[0243] Further, this laminated glass was heated in an autoclave at 1.0 MPa and 130°C for 60 minutes. Afterward, the occurrence of wrinkles in the transparent resin substrate 52 was examined by visual inspection and microscopic examination. [Table 3] material Film thickness [µm] E'[Pa] E' × t 3 [Pa · m 3 ] Assessment result Example 14 TAC 80 2,74 × 10 9 1,40 × 10 -3 Good Example 15 Pl 50 3,10 × 10 9 3,88 × 10- 4 Unacceptable Example 16 PEN 125 4,92 × 10 9 9,61 × 10 -3 Good Example 17 PET (annealed material) 125 3,40 × 10 9 6,64 × 10 -3 Good

[0244] As shown in Table 3, in the transparent resin substrate 52 made of TAC having a thickness of 80 µm according to Example 14, the tensile storage elastic modulus E' at 25 °C was 2.74 × 10 9 Pa and the product E' × t 3 of the tensile storage elastic modulus E' at 25 °C and the cube of the thickness t was 1.40 × 10 -3 Pa · m 3 .

[0245] As shown in Table 3, no wrinkles were observed in the transparent resin substrate 52 according to Example 14 and thus it was good.

[0246] As shown in Table 3, in the transparent resin substrate 52 made of PI having a thickness of 50 µm according to Example 15, the tensile storage elastic modulus E' at 25 °C was 3.10 × 10 9 Pa and the product E' × t 3of the tensile storage elastic modulus E' at 25 °C and the cube of the thickness t was 3.88 × 10 -4 Pa · m 3 .

[0247] As shown in Table 3, wrinkles were observed in the transparent resin substrate 52 according to Example 15 and thus it was unacceptable.

[0248] As shown in Table 3, in the transparent resin substrate 52 made of PEN having a thickness of 125 µm according to Example 16, the tensile storage elastic modulus E' at 25 °C was 4.92 × 10 9 Pa and the product E' × t 3 of the tensile storage elastic modulus E' at 25 °C and the cube of the thickness t was 9.61 × 10 -3 Pa · m 3 .

[0249] As shown in Table 3, no wrinkles were observed in the transparent resin substrate 52 according to Example 16, and thus it was good.

[0250] As shown in Table 3, in the transparent resin substrate 52 made of PET having a thickness of 125 µm according to Example 17, the tensile storage elastic modulus E' at 25 °C was 3.40 × 10 9 Pa and the product E' × t 3 of the tensile storage elastic modulus E' at 25 °C and the cube of the thickness t was 6.64 × 10 -3 Pa · m 3 .

[0251] As shown in Table 3, no wrinkles were observed in the transparent resin substrate 52 according to Example 16, and thus it was good.

[0252] Based on the evaluation results shown in Table 3, it was found that when the product of the tensile storage elastic modulus E' at 25 °C and the cube of the thickness of the transparent resin substrate 52 is greater than 4.0 × 10- 4 [Pa · m 3], wrinkles in the transparent resin substrate 52 can be prevented when the laminated glass was a bent glass.

[0253] It should be noted that the present invention is not limited to the embodiments described above and can be modified in an appropriate manner without departing from the scope and essence of the invention.

[0254] This application is based on and claims priority from Japanese Patent Application No. 2022-211953, filed on December 28, 2022, the disclosure of which is incorporated herein by reference in its entirety. List of reference symbols 1 GLASS CARRIER SUBSTRATE 2 release layer 10 FLEXIBLE TRANSPARENT SUBSTRATE 11 MAIN SUBSTRATE 12 ADHESIVE LAYER 20 LIGHT-EMITTING UNIT 21-23 LED ELEMENT 30 IC chips 40 WIRING CABLE 41 POWER SUPPLY LINE 41a FIRST POWER SUPPLY BRANCH LINE 41b Second power supply branch line 42 GROUNDING WIRE 42a Earthing branch line 43 Row Data Line 43a Row data branch line 44 Column Data Line 44a Column Data Branch Line 45 CONTROL LINE 46 DATA OUTPUT LINE 47 CONTROL SIGNAL LINE 50 PROTECTIVE LAYER 51 OPTICALLY TRANSPARENT ADHESIVE LAYER 52 TRANSPARENT RESIN SUBSTRATE 70 SENSOR 100 FLEXIBLE TRANSPARENT DISPLAY DEVICE 101 DISPLAY AREA 102 NON-DISPLAY AREA 200 LAMINATED GLASS (WINDOW PANE) 201 SHIELDING SECTION 210a, 210b INTERMEDIATE LAYER 220a, 220b GLASS PLATE 301 PHOTOGRAPHY AREA CF1-CF3 COLOR FILTERS FR1, FR2 PHOTORESISTANT IW INTERNAL WIRING CABLE M1 FIRST METAL LAYER M2 SECOND METAL LAYER ML1-ML3 MICROLENS PD1-PD3 PHOTODIODE PIX PIXEL QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] WO 2021 / 132106

[0006] JP 2022-211953

[0254] Cited non-patent literature

[0000] JIS K 6854-2:1999

[0144]

Claims

[1] Flexible transparent electronic device comprising: a flexible transparent substrate; a semiconductor element arranged on a main surface of the flexible transparent substrate and having an area of ​​1000000 µm 2 or smaller; a wiring line connected to the semiconductor element; and a protective layer made of a transparent resin and covering the semiconductor element and the wiring line arranged on the flexible transparent substrate, wherein the protective layer includes: an optically transparent adhesive layer directly covering the semiconductor element and the wiring line; a transparent resin substrate bonded to the flexible transparent substrate with the optically transparent adhesive layer interposed therebetween, the transparent resin substrate having a storage elastic modulus at 25 °C higher than that of the optically transparent adhesive layer, and a thickness of the optically transparent adhesive layer is greater than that of the semiconductor element and is 100 µm or smaller. [2] A flexible transparent electronic device according to claim 1, wherein a shear storage elastic modulus of the optically transparent adhesive layer at 25 °C is 10 4 Pa or higher and 10 7 Pa or lower and a tensile storage elastic modulus of the transparent resin substrate at 25 °C 10 8 Pa or higher and 10 10 Pa or lower. [3] A flexible transparent electronic device according to claim 1 or 2, wherein the thickness of the optically transparent adhesive layer is greater than that of the flexible transparent substrate and is identical to or less than that of the transparent resin substrate. [4] A flexible transparent electronic device according to claim 1 or 2, wherein the optically transparent adhesive layer contains one of an acrylic resin, a silicone resin and a urethane resin. [5] A flexible transparent electronic device according to claim 1 or 2, wherein the bending rigidity of the transparent resin substrate is higher than that of the flexible transparent substrate. [6] The flexible transparent electronic device according to claim 1 or 2, wherein heat shrinkage ratios of the transparent resin substrate in a machine direction and in a transverse direction when the transparent resin substrate is heated to 130°C are both 0.2% or lower. [7] A flexible transparent electronic device according to claim 1 or 2, wherein a product of a tensile storage elastic modulus of the transparent resin substrate at 25 °C and the cube of a thickness of the transparent resin substrate is greater than 4.0 × 10 -4 Pa · m 3 is. [8] A flexible transparent electronic device according to claim 1 or 2, wherein the semiconductor element is a light-emitting diode element having an area of ​​10000 µm 2 or smaller and the flexible transparent electronic device is a flexible transparent display device. [9] Laminated glass comprising: a pair of glass plates facing each other; a first intermediate film and a second intermediate film arranged between the pair of glass plates; and a flexible transparent electronic device disposed between the first and second intermediate films, wherein the flexible transparent electronic device comprises: a flexible transparent substrate; a semiconductor element arranged on a main surface of the flexible transparent substrate and having an area of ​​1000000 µm 2 or smaller; a wiring line connected to the semiconductor element; and a protective layer made of a transparent resin and covering the semiconductor element and the wiring line arranged on the flexible transparent substrate, wherein the protective layer includes: an optically transparent adhesive layer directly covering the semiconductor element and the wiring line; a transparent resin substrate bonded to the flexible transparent substrate with the optically transparent adhesive layer interposed therebetween, the transparent resin substrate having a storage elastic modulus at 25 °C higher than that of the optically transparent adhesive layer, and a thickness of the optically transparent adhesive layer is greater than that of the semiconductor element and is 100 µm or smaller. [10] The laminated glass according to claim 9, wherein a shear storage elastic modulus of the optically transparent adhesive layer at 25 °C is 10 4 Pa or higher and 10 7 Pa or lower and a tensile storage elastic modulus of the transparent resin substrate at 25 °C 10 8 Pa or higher and 10 10 Pa or lower. [11] The laminated glass according to claim 9 or 10, wherein the thickness of the optically transparent adhesive layer is greater than that of the flexible transparent substrate and is identical to or less than that of the transparent resin substrate. [12] The laminated glass according to claim 9 or 10, wherein the optically transparent adhesive layer contains one of an acrylic resin, a silicone resin and a urethane resin. [13] The laminated glass according to claim 9 or 10, wherein the bending rigidity of the transparent resin substrate is higher than that of the flexible transparent substrate. [14] The laminated glass according to claim 9 or 10, wherein heat shrinkage ratios of the transparent resin substrate in a machine direction and in a transverse direction when the transparent resin substrate is heated to 130°C are both 0.2% or lower. [15] The laminated glass according to claim 9 or 10, wherein a product of a tensile storage elastic modulus of the transparent resin substrate at 25 °C and the cube of a thickness of the transparent resin substrate is greater than 4.0 × 10 4 Pa · m 3 is. [16] The laminated glass according to claim 9 or 10, wherein the transparent resin substrate is in close contact with the first intermediate film, and a 180-degree peel strength between the transparent resin substrate and the first intermediate film is 5 N / 20 mm or higher. [17] Laminated glass according to claim 9 or 10, wherein the semiconductor element is a light-emitting diode element having an area of ​​10000 µm 2 or smaller and the flexible transparent electronic device is a flexible transparent display device. [18] A method of manufacturing a flexible transparent electronic device, comprising: Arranging a semiconductor element with an area of ​​1,000,000 µm 2 or smaller on a flexible transparent substrate; Forming a wiring line connected to the semiconductor element; and Forming a protective layer made of a transparent resin and covering the semiconductor element and the wiring line arranged on the flexible transparent substrate, wherein the protective layer includes: an optically transparent adhesive layer directly covering the semiconductor element and the wiring line; a transparent resin substrate bonded to the flexible transparent substrate with the optically transparent adhesive layer interposed therebetween, the transparent resin substrate having a storage elastic modulus at 25 °C higher than that of the optically transparent adhesive layer, and a thickness of the optically transparent adhesive layer is greater than that of the semiconductor element and is 100 µm or smaller.

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