Electrolytic copper foil

Abstract

Copper foil produced by an electroplating process, comprising a method for controlling the aperture density in the copper foil produced by the electroplating process, wherein the method comprises adjusting one or more electroplating parameters, comprising: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the concentration of chloride ions in the electrolyte; and / or (c) Incorporation of one or more additives selected from one or more of chloride ions, gelatin, silane coupling agent and copper anti-lanolin additive; where the adjustment of one or more electroplating parameters allows the controlled adjustment of the pore density in the copper foil; and wherein the copper foil is produced by carrying out the electroplating process with the set one or several electroplating parameters in order to produce the copper foil with a specified pore density.

Description

TECHNICAL AREA

[0001] The present disclosure relates to electrolytic copper foils and copper foils produced by manufacturing processes for controlling the number of needle holes in electrolytic copper foils. BACKGROUND

[0002] This section provides background information relating to the present disclosure, which is not necessarily prior art.

[0003] Electrolytic copper foil is widely used in the electronics industry due to its excellent electrical conductivity, mechanical strength, and chemical stability. It is typically produced by electrolytically depositing copper onto a rotating drum cathode from an acidic copper sulfate solution. FIGURES

[0004] The figures described herein serve only to illustrate selected embodiments, and not all possible implementations are intended to limit the scope of this disclosure. Fig. 1 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 1 to 10, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 1 of Table 1 below according to exemplary processes of the present disclosure. Fig.2 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 51 to 100, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 2 of Table 1 below according to exemplary processes of the present disclosure. Fig. 3 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of more than 100, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 5 of Table 1 below according to exemplary processes of the present disclosure. Fig.4 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 51 to 100, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 6 of Table 1 below according to exemplary processes of the present disclosure. Fig. Figure 5 shows copper foils, in particular porous copper, produced according to exemplary methods of the present disclosure, in particular a verification of the magnification of a copper foil 1 (large raw foil machine) by visual inspection with the naked eye - black light test on the left side of Fig. 5 and a copper foil 3 (small raw foil machine) by visual inspection with the naked eye - black light test on the right side of Fig. 5. DETAILED DESCRIPTION

[0005] Examples of implementation will now be described in more detail with reference to the accompanying figures.

[0006] Known technologies for producing copper foil without pinholes typically emphasize increasing the purity of the electroplating solution, for example, by increasing filter accuracy. In contrast, various known methods have already been applied to produce porous copper foils characterized by high-density pinholes.

[0007] A first known method for producing a copper foil with numerous pinholes involves applying external mechanical forces, such as laser drilling or mechanical perforation, to introduce holes of a specific size and quantity into an initially unperforated copper foil. A second known method uses a chemical etching process in which an etchant and a dry film are used to etch holes of a specific size and quantity into an initially unperforated copper foil.

[0008] A third known method for providing a copper foil with a very large number of pinholes involves a direct electroplating process. This process involves coating the cathode surface with a non-conductive material, thus preventing parts of the cathode surface from being electroplated with copper foil. Conventional methods for producing electrolytic copper foil build upon this to obtain a porous copper foil. However, as has been recognized here, the direct electroplating process requires precise treatment of the cathode, which results in relatively high costs.

[0009] In summary, known methods for producing porous copper foil typically rely on mechanical perforation (e.g., punching or drilling) or chemical etching of a pre-existing, non-perforated copper foil. These methods require the prior acquisition of a solid, non-perforated copper foil and involve complex processing steps. On the other hand, there are also known methods in which the cathode of the copper foil is subjected to various processes, such as the deliberate application of a non-conductive material (e.g., resin) to the surface of the coated cathode, which enables subsequent electroplating of a porous copper foil.

[0010] In view of the limitations of conventional methods, this disclosure provides an exemplary manufacturing technique capable of producing a porous or perforated copper foil with a controlled number of pinholes using existing electrolytic copper foil plating equipment without the need for additional post-processing. The disclosed method achieves this by directly controlling the oxidation state of the cathode surface and / or by incorporating specific additives into the plating process. Therefore, modified conventional electrolytic copper foil manufacturing processes can be used to produce a porous copper foil with the desired pinhole density, offering advantages in terms of cost-efficiency and process controllability.

[0011] The disclosed manufacturing process can precisely control the pinhole density in the electrolysis copper foil, ranging from zero pinholes to densities of more than 100 pinholes per square decimeter. This is achieved by selectively using additives and / or determining whether cathode polishing should be applied, thus enabling customized adaptation of the copper foil properties for various applications.

[0012] In exemplary embodiments, the aperture density in the copper foil can be adjusted by selectively setting one or more of the following electroplating parameters: (1) Applying or omitting cathode polishing; (2) the concentration of chloride ions in the electrolyte; (3) Incorporation of additive(s), such as chloride ions, gelatin, silane coupling agents and copper tarnish inhibitors; and (4) Setting electroplating parameters, such as one or more of sulfuric acid concentration, electroplating temperature and current density.

[0013] For example, a copper tarnish inhibitor can contain benzotriazole (BTA) or similar triazole derivatives, which can be used to form a temporary protective film on the copper surface. Alternatively, the copper tarnish inhibitor can contain non-conductive substances, oils, etc., which are used to form a protective film.

[0014] Table 1 below includes experimental examples 1 to 6, which show that the aperture density in the copper foil can be controlled by selectively adjusting electroplating parameters, including: (1) applying or omitting cathode polishing; (2) a concentration of chloride ions in the electrolyte; (3) incorporating additive(s), such as chloride ions, gelatin, silane coupling agent, and copper anti-tarnish agent; and (4) adjusting electroplating parameters, such as one or more of sulfuric acid concentration, electroplating temperature, and current density. TABLE 1 Electroplating parameters 1 2 3 4 5 6 Copper(II) sulfate (CuSO4) concentration in g / L 300 300 300 300 300 300 Sulfuric acid (H2SO4) concentration in g / L 120 120 120 120 120 120 Cathode polishing / grinding (Yes / No) Y N N N Y Y Additive: Chloride ions (CI) - ) in ppm 45 45 45 0 45 45 Additive: Gelatin (Yes / No) N Y Additive: Silane coupling agent (Yes / No) Y Additive: Copper tarnish inhibitor (Yes / No) N Current density (dK) in A / dm² 2 60 60 60 60 60 60 Current in amperes (A) 231 231 231 231 231 231 Temperature in degrees Celsius (°C) 65 65 65 65 65 65 Copper layer thickness in micrometers (µm) 12 12 12 12 12 12 Plating time in seconds (s) 45 45 45 45 45 45 Porosity in counts per square decimeter (dm²) 2 ) 1-10 51-100 0 0 >100 51-100

[0015] As shown in the first column of Table 1 above, an exemplary copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 1 to 10 can be produced by an electroplating process which includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) of 300 grams per liter; • a concentration of sulfuric acid (H2SO4) of 120 grams per liter; • Polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 45 parts per million; • No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; • a current density of 60 A / dm2; • a current of 231 A; • a plating temperature of 65 °C; and • a plating time of 45 seconds.

[0016] Fig.1 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 1 to 10, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 1 of the preceding Table 1 according to exemplary processes of the present disclosure.

[0017] As shown in the second column of Table 1 above, an exemplary copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 51 to 100 can be produced by an electroplating process that includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) of 300 grams per liter; • a concentration of sulfuric acid (H2SO4) of 120 grams per liter; • without polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 45 parts per million; • No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; • a current density of 60 A / dm2; • a current of 231 A; • a plating temperature of 65 °C; and • a plating time of 45 seconds.

[0018] Fig. 2 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 51 to 100, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 2 of the preceding Table 1 according to exemplary processes of the present disclosure.

[0019] As shown in the third column of Table 1 above, an exemplary copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 0 can be produced by an electroplating process that includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) of 300 grams per liter; • a concentration of sulfuric acid (H2SO4) of 120 grams per liter; • without polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 45 parts per million; • a concentration of gelatin of 1 part per million or less; • No incorporation of any silane coupling agent additive or copper anti-starting agent additive; • a current density of 60 A / dm2; • a current of 231 A; • a plating temperature of 65 °C; and • a plating time of 45 seconds.

[0020] As shown in the fourth column of Table 1 above, an exemplary copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 0 can be produced by an electroplating process that includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) of 300 grams per liter; • a concentration of sulfuric acid (H2SO4) of 120 grams per liter; • without polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 0 parts per million; • No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; • a current density of 60 A / dm2; • a current of 231 A; • a plating temperature of 65 °C; and • a plating time of 45 seconds.

[0021] As shown in the fifth column of Table 1 above, an exemplary copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of more than 100 can be produced by an electroplating process that includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) of 300 grams per liter; • a concentration of sulfuric acid (H2SO4) of 120 grams per liter; • Polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 45 parts per million; • a concentration of silane coupling agent in the range of 0.5 milligrams per liter to 100 milligrams per liter; • No incorporation of any gelatin additive or copper tarnish agent additive; • a current density of 60 A / dm2; • a current of 231 A; • a plating temperature of 65 °C; and • a plating time of 45 seconds.

[0022] Fig. 3 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of more than 100, wherein the copper foil was produced by an electroplating process which includes the electroplating parameters shown in column 5 of the preceding Table 1 according to exemplary processes of the present disclosure.

[0023] As shown in the sixth column of Table 1 above, an exemplary copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 51 to 100 can be produced by an electroplating process that includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) of 300 grams per liter; • a concentration of sulfuric acid (H2SO4) of 120 grams per liter; • Polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 45 parts per million; • a concentration of copper tarnish remover in the range of 0.5 milligrams per liter to 100 milligrams per liter; • No incorporation of any gelatin additive or silane coupling agent additive; • a current density of 60 A / dm2; • a current of 231 A; • a plating temperature of 65 °C; and • a plating time of 45 seconds.

[0024] Fig.4 includes a surface scanning electron microscope (SEM) photograph of a copper foil with a thickness of 12 micrometers and a porosity in counts per square decimeter of 51 to 100, wherein the copper foil was produced by an electroplating process comprising the electroplating parameters shown in column 6 of Table 1 above.

[0025] Examples 1 to 6 demonstrate that the aperture density in the copper foil can be controlled by selectively adjusting one or more of the following electroplating parameters: (1) applying or omitting cathode polishing; (2) a specific concentration of chloride ions in the electrolyte; (3) incorporating additive(s), such as chloride ions, gelatin, silane coupling agents, and copper anti-tarnish agents; and (4) adjusting electroplating parameters, such as one or more of the sulfuric acid concentration, electroplating temperature, and current density. The specific electroplating parameters used in Examples 1 to 6 are merely examples, as the electroplating parameters can be selectively adjusted to obtain a copper foil with varying aperture densities, thicknesses, etc.For example, one or more of the following electroplating parameters can be used in an exemplary procedure for controlling the aperture density in a copper foil produced by electroplating: • a concentration of chloride ions (Cl-) in the electrolyte in the range of 0 parts per million to 70 parts per million; • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; • a concentration of gelatin in the range of 0 parts per million to 1 part per million; • a concentration of silane coupling agent in the range of 0.5 milligrams per liter to 100 milligrams per liter; • a concentration of copper tarnish remover in the range of 0.5 milligrams per liter to 100 milligrams per liter; • a plating temperature between 40 degrees Celsius (°C) and 75 °C; and / or • a current density between 10 amperes per square decimeter (A / dm2) and 120 A / dm2.

[0026] Exemplary methods for controlling the aperture density in a copper foil produced by electroplating are disclosed. In exemplary embodiments, the method comprises adjusting one or more electroplating parameters, including: (a) performing or omitting cathode polishing prior to electroplating; (b) modifying the concentration of chloride ions in the electrolyte; and / or (c) incorporating one or more additives selected from one or more chloride ions, gelatin, silane coupling agents, and copper anti-aging additives. Adjusting the one or more electroplating parameters allows for precise control of the aperture density in the copper foil produced by electroplating.

[0027] In exemplary processes, the concentration of chloride ions (Cl-) in the electrolyte is in a range from 0 parts per million (ppm) to 70 ppm (e.g. 0 ppm, 45 ppm, etc.).

[0028] In exemplary processes, the concentration of copper(II) sulfate (CuSO4) is in a range of 200 grams per liter to 360 grams per liter (e.g. 300 grams per liter, etc.).

[0029] In exemplary processes, the concentration of sulfuric acid (H2SO4) is in a range of 40 grams per liter to 200 grams per liter (e.g. 120 grams per liter, etc.).

[0030] In exemplary processes, the concentration of gelatin is in a range of 0 ppm to 1 ppm (e.g. 0 ppm, 1 ppm, etc.).

[0031] In exemplary processes, the concentration of the silane coupling agent ranges from 0.5 milligrams per liter to 100 milligrams per liter.

[0032] In exemplary processes, the concentration of the copper tarnish remover ranges from 0.5 milligrams per liter to 100 milligrams per liter.

[0033] In exemplary processes, the electroplating temperature is between 40 degrees Celsius (°C) and 75 °C (e.g. 65 °C etc.).

[0034] In exemplary procedures, the current density ranges between 10 amperes per square decimeter (A / dm2) and 120 A / dm2 (e.g. 60 A / dm2 etc.).

[0035] In exemplary embodiments, the process includes polishing the cathode before electroplating.

[0036] In exemplary embodiments, the method involves adjusting each of the following electroplating parameters: (a) performing or omitting cathode polishing prior to electroplating; (b) modifying a concentration of chloride ions in the electrolyte; and (c) incorporating one or more additives selected from one or more of chloride ions, gelatin, silane coupling agents, and copper anti-tarnish additives.

[0037] In exemplary embodiments, the method further includes (d) setting electroplating conditions, such as one or more of sulfuric acid concentration, electroplating temperature and current density.

[0038] In exemplary embodiments, the method involves carrying out an electroplating process with the set one or several electroplating parameters in order to produce the copper foil with the aperture density.

[0039] In exemplary embodiments, the method involves carrying out the electroplating process with the set one or several electroplating parameters in order to produce the copper foil with a porosity in counts per square decimeter of 0, 1 to 10, 11 to 50, 51 to 100 or more than 100.

[0040] In exemplary embodiments, the method involves producing a copper foil with a thickness of 12 micrometers or less and a porosity in the range of 1 to 10 per square decimeter by means of an electroplating process comprising the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • The concentration of sulfuric acid (H2SO4) ranges from 40 grams per liter to 200 grams per liter; • Polishing the cathode before electroplating; • The concentration of chloride ions (Cl-) in the electrolyte ranges from 0 parts per million to 70 parts per million; • No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; • a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and • a plating temperature between 40 degrees Celsius (°C) and 75 °C.

[0041] In exemplary embodiments, the method involves producing a copper foil with a thickness of 12 micrometers or less and a porosity in the range of 51 to 100 per square decimeter by means of an electroplating process comprising the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • The concentration of sulfuric acid (H2SO4) ranges from 40 grams per liter to 200 grams per liter; • without polishing the cathode before electroplating; • The concentration of chloride ions (Cl-) in the electrolyte ranges from 0 parts per million to 70 parts per million; • No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; • a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and • a plating temperature between 40 degrees Celsius (°C) and 75 °C.

[0042] In exemplary embodiments, the method involves producing a copper foil with a thickness of 12 micrometers or less and a porosity of 0 per square decimeter by means of an electroplating process comprising the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • The concentration of sulfuric acid (H2SO4) ranges from 40 grams per liter to 200 grams per liter; • without polishing the cathode before electroplating; • The concentration of chloride ions (Cl-) in the electrolyte ranges from 0 parts per million to 70 parts per million; • a concentration of gelatin of 1 part per million or less; • No incorporation of any silane coupling agent additive or copper anti-starting agent additive; • a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and • a plating temperature between 40 degrees Celsius (°C) and 75 °C.

[0043] In exemplary embodiments, the method involves producing a copper foil with a thickness of 12 micrometers or less and a porosity of 0 per square decimeter by means of an electroplating process comprising the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • The concentration of sulfuric acid (H2SO4) ranges from 40 grams per liter to 200 grams per liter; • without polishing the cathode before electroplating; • a concentration of chloride ions (Cl-) in the electrolyte of 0 parts per million; • No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; • a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and • a plating temperature between 40 degrees Celsius (°C) and 75 °C.

[0044] In exemplary embodiments, the method involves producing a copper foil with a thickness of 12 micrometers or less and a porosity of more than 100 per square decimeter by means of an electroplating process that includes the following electroplating parameters: • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • The concentration of sulfuric acid (H2SO4) ranges from 40 grams per liter to 200 grams per liter; • Polishing the cathode before electroplating; • The concentration of chloride ions (Cl-) in the electrolyte ranges from 0 parts per million to 70 parts per million; • a concentration of silane coupling agent in the range of 0.5 milligrams per liter to 100 milligrams per liter; • No incorporation of any gelatin additive or copper tarnish agent additive; • a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and • a plating temperature between 40 degrees Celsius (°C) and 75 °C.

[0045] In exemplary embodiments, the method includes an electroplating process that produces copper foil with a thickness of 12 micrometers or less and a porosity in the range of 51 to 100 per square decimeter using electroplating parameters that include the following: • a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; • The concentration of sulfuric acid (H2SO4) ranges from 40 grams per liter to 200 grams per liter; • Polishing the cathode before electroplating; • The concentration of chloride ions (Cl-) in the electrolyte ranges from 0 parts per million to 70 parts per million; • a concentration of copper tarnish remover in the range of 0.5 milligrams per liter to 100 milligrams per liter; • No incorporation of any gelatin additive or silane coupling agent additive; • a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and • a plating temperature between 40 degrees Celsius (°C) and 75 °C.

[0046] In exemplary embodiments, a copper foil is produced by a process as disclosed herein. In exemplary embodiments, the copper foil has a porosity in the range of 1 to 10 per square decimeter. In exemplary embodiments, the copper foil has a porosity in the range of 11 to 50 per square decimeter. In exemplary embodiments, the copper foil has a porosity in the range of 51 to 100 per square decimeter. In exemplary embodiments, the copper foil has a porosity of more than 100 per square decimeter. In exemplary embodiments, the copper foil comprises perforated apertures with a diameter of 10 micrometers or less. In exemplary embodiments, the copper foil has a thickness in the range of 3 micrometers to 15 micrometers. In exemplary embodiments, the copper foil has a thickness of 12 micrometers or less.

[0047] In exemplary embodiments, a copper foil has a thickness of 12 micrometers or less (e.g. 12 micrometers, 6 micrometers, etc.), apertures with a diameter of 10 micrometers or less, and a porosity in the range of 1 to 10 per square decimeter.

[0048] In exemplary embodiments, a copper foil has a thickness of 12 micrometers or less (e.g. 12 micrometers, 6 micrometers, etc.), apertures with a diameter of 10 micrometers or less, and a porosity in the range of 11 to 50 per square decimeter.

[0049] In exemplary embodiments, a copper foil has a thickness of 12 micrometers or less (e.g. 12 micrometers, 6 micrometers, etc.), apertures with a diameter of 10 micrometers or less, and a porosity in the range of 51 to 100 per square decimeter.

[0050] In exemplary embodiments, a copper foil has a thickness of 12 micrometers or less (e.g. 12 micrometers, 6 micrometers, etc.), apertures with a diameter of 10 micrometers or less, and a porosity of more than 100 per square decimeter.

[0051] In an exemplary embodiment, a device or system includes a copper foil as disclosed herein. The copper foil is configured to be used for managing thermal and / or electromagnetic properties of the device or system.

[0052] In exemplary embodiments, a smartphone includes a copper foil as disclosed herein. The copper foil is configured to be used for managing the thermal and / or electromagnetic properties of the smartphone.

[0053] Exemplary embodiments are provided to ensure that this disclosure is complete and fully conveys its scope to those skilled in the art. Numerous specific details are set forth, such as examples of specific components, devices, and methods, to provide a thorough understanding of embodiments of the present disclosure. It is obvious to those skilled in the art that specific details need not be used, that exemplary embodiments can be implemented in many different forms, and that none of these should be interpreted in such a way as to limit the scope of the disclosure. In some exemplary embodiments, well-known methods, well-known device structures, and well-known technologies are not described in detail.Furthermore, advantages and improvements that may be achieved with one or more exemplary embodiments of the present disclosure are provided for illustrative purposes only and do not limit the scope of the present disclosure, since exemplary embodiments disclosed herein may provide all or none of the above-mentioned advantages and improvements and yet still fall within the scope of the present disclosure.

[0054] Specific dimensions, materials, and / or shapes disclosed herein are exemplary and do not limit the scope of this disclosure. The disclosure herein of specific values ​​and ranges of values ​​for given electroplating parameters does not preclude other values ​​and ranges of values ​​that may be useful in one or more of the examples disclosed herein. Furthermore, it is provided that any two specific values ​​for a given parameter may define the endpoints of a range of values ​​that may be suitable for the given parameter (i.e., the disclosure of a first and second value for a given parameter may be interpreted as disclosing that any value between the first and second value could also be used for the given parameter).For example, if parameter X is specified herein by way of example with the value A and also by way of example with the value Z, it is intended that parameter X may have a range of values ​​from approximately A to approximately Z. Likewise, it is intended that the disclosure of two or more ranges of values ​​for a parameter (regardless of whether these ranges are nested, overlapping, or distinct) includes all possible combinations of ranges for the value that could be claimed using the endpoints of the disclosed ranges. For example, if parameter X is specified herein by way of example with values ​​in the range of 1-10, 2-9, or 3-8, it is also intended that parameter X may have other ranges of values, such as 1-9, 1-8, 1-3, 1-2, 2-10, 2-8, 2-3, 3-10, and 3-9.

[0055] The terminology used herein serves only to describe certain exemplary embodiments and is not intended to be restrictive. For example, where permissible expressions such as "may include," "may have," and the like are used, at least one embodiment includes or has the feature(s). As used herein, the singular forms "a," "an," and "the" may also include the plural forms unless the context clearly indicates otherwise. The terms "includes," "comprising," "as," and "having" are inclusive and therefore indicate the presence of the specified features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.The procedural steps, processes, and procedures described here are not to be understood as necessarily having to be carried out in the described or depicted order, unless this is explicitly stated as the execution sequence. It is also understood that additional or alternative steps may be applied.

[0056] When an element or layer is described as "on," "interacting with," "connected with," or "coupled with" another element or layer, it may be directly on, interacting with, connected with, or coupled to that other element or layer, or there may be intervening elements or layers. Conversely, when an element is described as "directly on," "directly interacting with," "directly connected with," or "directly coupled with" another element or layer, there may be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted similarly (e.g., "between" versus "directly between," "adjacent" versus "directly adjacent," etc.).As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed elements.

[0057] Although the terms first, second, third, etc., may be used herein to describe different elements, components, areas, layers, and / or sections, these elements, components, areas, layers, and / or sections should not be restricted by these terms. These terms may only be used to distinguish one element, component, area, layer, or section from another. Terms such as "first," "second," and other numerical terms, when used herein, do not imply any sequence or order unless clearly indicated by the context.Thus, a first element, a first component, a first area, a first layer or a first section described below could be referred to as a second element, a second component, a second area, a second layer or a second section without deviating from the teachings of the exemplary embodiments.

[0058] Spatially relative terms, such as "inner," "outer," "below," "under," "lower," "above," "upper," and the like, may be used herein to simplify the description and to describe the relationship of one element or feature to another element(s) or feature(s), as illustrated in the figures. Spatially relative terms may be intended to encompass different orientations of the device in use or operation, in addition to the orientation shown in the figures. For example, if the device in the figures is inverted, elements described as "below" or "underneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation from above and from below.The device may be oriented differently (rotated by 90 degrees or in other orientations) and the spatially relative descriptors used herein may be interpreted accordingly.

[0059] The foregoing description of the embodiments has been provided for illustrative and descriptive purposes. It is not intended to be exhaustive or to limit the disclosure. Individual elements, intended or stated uses, or features of a particular embodiment are generally not limited to that particular embodiment but are interchangeable and may be used in a selected embodiment, even if not specifically shown or described. The same can also be varied in many respects. Such variations are not to be considered a departure from the disclosure, and all such modifications are to be included within the scope of the disclosure.

Claims

[1] Copper foil produced by an electroplating process comprising a method for controlling the aperture density in the copper foil produced by the electroplating process, the method comprising adjusting one or more electroplating parameters, comprising: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the concentration of chloride ions in the electrolyte; and / or (c) Incorporation of one or more additives selected from one or more of chloride ions, gelatin, silane coupling agent and copper anti-lanolin additive; where the adjustment of one or more electroplating parameters allows the controlled adjustment of the pore density in the copper foil; and wherein the copper foil is produced by carrying out the electroplating process with the set one or several electroplating parameters in order to produce the copper foil with a specified pore density. [2] Copper foil according to claim 1, wherein the copper foil is produced by an electroplating process comprising a concentration of chloride ions (Cl-) in the electrolyte in a range of 0 parts per million to 70 parts per million. [3] Copper foil according to any of the preceding claims, wherein the copper foil is produced by an electroplating process comprising a concentration of copper(II) sulfate (CuSO4) in a range of 200 grams per liter to 360 grams per liter. [4] Copper foil according to any of the preceding claims, wherein the copper foil is produced by an electroplating process comprising a concentration of sulfuric acid (H2SO4) in a range of 40 grams per liter to 200 grams per liter. [5] Copper foil according to any of the preceding claims, wherein the copper foil is produced by an electroplating process comprising a concentration of gelatin in a range of 0 parts per million to 1 part per million. [6] Copper foil according to one of the preceding claims, wherein the copper foil is produced by an electroplating process comprising a concentration of the silane coupling agent in a range of 0.5 milligrams per liter to 100 milligrams per liter. [7] Copper foil according to one of the preceding claims, wherein the copper foil is produced by an electroplating process comprising a concentration of the copper tarnish inhibitor in a range of 0.5 milligrams per liter to 100 milligrams per liter. [8] Copper foil according to any of the preceding claims, wherein the copper foil is produced by an electroplating process comprising an electroplating temperature between 40 degrees Celsius (°C) and 75 °C. [9] Copper foil according to any of the preceding claims, wherein the copper foil is produced by an electroplating process comprising a current density between 10 amperes per square decimeter (A / dm2) and 120 A / dm2. [10] Copper foil according to any of the preceding claims, wherein the copper foil is produced by an electroplating process comprising polishing the cathode prior to electroplating. [11] Copper foil according to any of the preceding claims, wherein the setting of one or more electroplating parameters comprises each of the following steps: (a) Performing or omitting cathode polishing prior to electroplating; (b) Modifying the concentration of chloride ions in the electrolyte; and (c) Incorporation of one or more additives selected from one or more of chloride ions, gelatin, silane coupling agent and copper anti-lanolin additive. [12] Copper foil according to one of the preceding claims, wherein the setting of one or more electroplating parameters further comprises (d) setting electroplating conditions, including one or more of sulfuric acid concentration, electroplating temperature and current density. [13] Copper foil according to one of the preceding claims, wherein the copper foil is produced by carrying out the electroplating process with the set one or the set several electroplating parameters in order to produce the copper foil with a porosity of 0, 1 to 10, 11 to 50, 51 to 100 or more than 100 per square decimeter. [14] Copper foil according to claim 1, wherein the copper foil has a thickness of 12 micrometers or less and a porosity of 1 to 10 per square decimeter by means of an electroplating process having the following electroplating parameters: a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; Polishing the cathode before electroplating; a concentration of chloride ions (Cl-) in the electrolyte in a range of 0 parts per million to 70 parts per million; No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and a galvanizing temperature between 40 degrees Celsius (°C) and 75 °C. [15] Copper foil according to claim 1, wherein the copper foil has a thickness of 12 micrometers or less and a porosity of 51 to 100 per square decimeter by means of an electroplating process comprising the following electroplating parameters: a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; without polishing the cathode before electroplating; a concentration of chloride ions (Cl-) in the electrolyte in a range of 0 parts per million to 70 parts per million; No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and a galvanizing temperature between 40 degrees Celsius (°C) and 75 °C. [16] Copper foil according to claim 1, wherein the copper foil has a thickness of 12 micrometers or less and a porosity of 0 per square decimeter by means of an electroplating process comprising the following electroplating parameters: a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; without polishing the cathode before electroplating; a concentration of chloride ions (Cl-) in the electrolyte in a range of 0 parts per million to 70 parts per million; a concentration of gelatin of 1 part per million or less; no incorporation of any silane coupling agent additive or copper anti-starting agent additive; a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and a galvanizing temperature between 40 degrees Celsius (°C) and 75 °C. [17] Copper foil according to claim 1, wherein the copper foil has a thickness of 12 micrometers or less and a porosity of 0 per square decimeter by means of an electroplating process comprising the following electroplating parameters: a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; without polishing the cathode before electroplating; a concentration of chloride ions (Cl-) in the electrolyte of 0 parts per million; No incorporation of any gelatin additive, silane coupling agent additive or copper anti-tallow additive; a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and a galvanizing temperature between 40 degrees Celsius (°C) and 75 °C. [18] Copper foil according to claim 1, wherein the copper foil has a thickness of 12 micrometers or less and a porosity of more than 100 per square decimeter by means of an electroplating process comprising the following electroplating parameters: a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; Polishing the cathode before electroplating; a concentration of chloride ions (Cl-) in the electrolyte in a range of 0 parts per million to 70 parts per million; a concentration of silane coupling agent in the range of 0.5 milligrams per liter to 100 milligrams per liter; No incorporation of any gelatin additive or copper tarnish agent additive; a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and a galvanizing temperature between 40 degrees Celsius (°C) and 75 °C. [19] Copper foil according to claim 1, wherein the copper foil has a thickness of 12 micrometers or less and a porosity of 51 to 100 per square decimeter by means of an electroplating process comprising the following electroplating parameters: a concentration of copper(II) sulfate (CuSO4) in the range of 200 grams per liter to 360 grams per liter; a concentration of sulfuric acid (H2SO4) in the range of 40 grams per liter to 200 grams per liter; Polishing the cathode before electroplating; a concentration of chloride ions (Cl-) in the electrolyte in a range of 0 parts per million to 70 parts per million; a concentration of copper tarnish remover in the range of 0.5 milligrams per liter to 100 milligrams per liter; no incorporation of any gelatin additive or silane coupling agent additive; a current density between 10 amperes per square decimeter (A / dm²) and 120 A / dm²; and a galvanizing temperature between 40 degrees Celsius (°C) and 75 °C. [20] Copper foil according to any one of claims 1 to 13, wherein: the copper foil has a porosity per square decimeter in a range of 1 to 10, 11 to 50, 51 to 100 or more than 100; the copper foil includes aperture plates with a diameter of 10 micrometers or less; and the copper foil has a thickness of 12 micrometers or less. [21] Copper foil according to any one of claims 1 to 13, wherein the copper foil has a porosity per square decimeter in a range of 1 to 10. [22] Copper foil according to any one of claims 1 to 13, wherein the copper foil has a porosity per square decimeter in a range of 11 to 50. [23] Copper foil according to any one of claims 1 to 13, wherein the copper foil has a porosity per square decimeter in a range of 51 to 100. [24] Copper foil according to any one of claims 1 to 13, wherein the copper foil has a porosity per square decimeter of more than 100. [25] Copper foil according to any one of claims 1 to 13, wherein the copper foil comprises apertures with a diameter of 10 micrometers or less. [26] Copper foil according to any one of claims 1 to 13, wherein the copper foil has a thickness in the range of 3 micrometers to 15 micrometers. [27] Copper foil according to any one of claims 1 to 13, wherein the copper foil has a thickness of 12 micrometers or less. [28] Copper foil according to any one of claims 1 to 13, wherein: the copper foil has a thickness of 12 micrometers or less; the copper foil includes aperture plates with a diameter of 10 micrometers or less; and The copper foil has a porosity per square decimeter in a range of 1 to 10. [29] Copper foil according to any one of claims 1 to 13, wherein: the copper foil has a thickness of 12 micrometers or less; the copper foil includes aperture plates with a diameter of 10 micrometers or less; and The copper foil has a porosity per square decimeter in a range of 11 to 50. [30] Copper foil according to any one of claims 1 to 13, wherein: the copper foil has a thickness of 12 micrometers or less; the copper foil includes aperture plates with a diameter of 10 micrometers or less; and The copper foil has a porosity per square decimeter in the range of 51 to 100. [31] Copper foil according to any one of claims 1 to 13, wherein: the copper foil has a thickness of 12 micrometers or less; the copper foil includes aperture plates with a diameter of 10 micrometers or less; and The copper foil has a porosity of more than 100 per square decimeter. [32] Device or system comprising the copper foil according to any of the preceding claims, wherein the copper foil is configured to be used for managing thermal and / or electromagnetic properties of the device or system. [33] Smartphone comprising the copper foil according to any one of claims 1 to 31, wherein the copper foil is configured to be used for managing thermal and / or electromagnetic properties of the smartphone.

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