Solution for post etch residue removal (PERR)

Abstract

The present invention relates to a composition for removing post etch residues from a substrate, the substrate comprising a surface of a molybdenum layer, the composition comprising: (a) 10 to 60 % by weight of a water-miscible organic solvent; (b) 4 to 15 % by weight of a C1-C12 amine; (c) 0.1 to 4 % by weight of a C4 to C16 quaternary ammonium hydroxide; (d) 0.5 to 5 % by weight of a C2 to C10 polyol; (e) 0.01 to 1 % by weight of a polyalkoxylated polyethyleneimine; (f) 0.001 to 0.07 % by weight of at least one guanidine derivative selected from 1,3-diphenylguanidine, 1-(o-tolyl)biguanide, buformin, phenformin, guanine, proguanil hydrochloride, 2-guanidinobenzimidazole, polyhexamethylene biguanide hydrochloride, polyaminopropyl biguanide, chlorhexidine or chlorhexidine salts; and (g) water.

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