Sensor, method for producing a sensor, electronic device and method for operating a sensor

Abstract

A sensor (10) comprises an assembly of sensor elements (1001, 1002,…100n). The sensor elements (1001, 1002,…100n) each have a single readable detector element (1051, 1052,…105n) and a filter element (1091, 1092,…109n) arranged above the detector element, wherein the filter element (1091, 1092,…109n) contains a first compound semiconductor material (135) with a composition ratio which changes along a vertical direction. At least two filter elements (1091, 1092,…109n) have different layer thicknesses of the first compound semiconductor material (135).

Description

[0001] SENSOR, METHOD FOR MANUFACTURING A SENSOR, ELECTRONIC

[0002] DEVICE AND METHOD FOR OPERATING A SENSOR

[0003] DESCRIPTION

[0004] The present disclosure relates to a sensor, in particular a multispectral sensor, which is suitable for detecting incident electromagnetic radiation in different wavelength ranges.

[0005] Sensors, such as those for detecting UV radiation, are based on semiconductor diodes capable of converting incoming electromagnetic radiation into a photocurrent. In general, concepts are being sought that allow the detected radiation to be resolved and quantified according to its wavelength.

[0006] The present invention is based on the object of providing an improved sensor and an improved method for producing a sensor.

[0007] According to embodiments, the problem is solved by the subject matter of the independent patent claims. Further developments are defined in the dependent patent claims.

[0008] According to embodiments, a sensor comprises an arrangement of sensor elements. The sensor elements each have an individually readable detector element and a filter element arranged above the detector element. The filter element contains a first compound semiconductor material with a composition ratio that changes along a vertical direction. The first compound semiconductor material is a II IV semiconductor material that contains elements of group III and at least one element of group V, and the proportion of the elements of group III changes along the vertical direction. The proportion of the at least one element of group V remains greater than zero. At least two filter elements have different layer thicknesses of the first compound semiconductor material. For example, the filter element consists of the first compound semiconductor material. For example, the compound semiconductor material can be Al x Gai-x As, where x changes along the vertical direction. The feature that the proportion of the at least one group V element remains greater than zero may mean that the group V element does not change along the vertical direction. For example, a case may be excluded in which part of the filter element contains an As compound semiconductor and another part of the filter element contains a P- or N-compound semiconductor.

[0009] According to embodiments, the sensor further comprises a cover element arranged between two adjacent filter elements. For example, the cover element can cover part of a surface of the filter elements.

[0010] According to embodiments, the sensor further comprises a filter layer over the filter elements.

[0011] For example, the composition ratio of the first compound semiconductor material may change continuously. According to further embodiments, the composition ratio may change in a stepwise manner.

[0012] According to embodiments, the detector element may be formed in a second compound semiconductor material. At least one composition element of the second compound semiconductor material may be a component of the first compound semiconductor material. According to further embodiments, the detector element may be formed in a semiconductor material that is different from the first compound semiconductor material.

[0013] For example, at least two detector elements can be identical to each other.

[0014] According to embodiments, a band gap of the first compound semiconductor material may decrease with increasing distance from a surface of the associated detector element.

[0015] According to embodiments, the first compound semiconductor material layer may additionally contain impurities, lattice defects, or a semiconductor material with an indirect band gap.

[0016] According to embodiments, the sensor may also further comprise a transparent, insulating passivation layer over the first compound semiconductor layer, wherein the passivation layer contains impurities, lattice defects, lattice defects or a semiconductor material with an indirect band gap.

[0017] Further embodiments relate to a method for producing a sensor with an arrangement of sensor elements, each having an individually readable detector element and a filter element arranged above an associated detector element. The method comprises forming a plurality of filter elements, each containing a first compound semiconductor material having a region with a composition ratio that changes along a vertical direction. The first compound semiconductor material is a II IV semiconductor material that contains elements from group III and at least one element from group V, and the proportion of the elements from group III changes along the vertical direction and the proportion of the at least one element from group V remains greater than zero.The method further comprises the partial removal of the first compound semiconductor material of at least one filter element, so that different layer thicknesses of the first compound semiconductor material are achieved over at least two detector elements.

[0018] For example, forming the plurality of filter elements may include applying the first compound semiconductor material over the array of sensor elements. Subsequently, the first compound semiconductor material may be partially removed after applying the first compound semiconductor material.

[0019] According to embodiments, the filter elements can be applied over the detector elements after the partial removal of the first compound semiconductor material.

[0020] Further embodiments relate to an electronic device comprising the sensor as defined above.

[0021] The electronic device may be selected from an exploration satellite or an analysis device.

[0022] Further embodiments relate to a method for operating a sensor as defined above. The method comprises reading out detector signals from at least two sensor elements, each having different layer thicknesses of the filter element, and determining a spectral signal from the difference between the detector signals. The accompanying drawings serve to understand embodiments of the invention. The drawings illustrate embodiments and, together with the description, serve to explain the same. Further embodiments and many of the intended advantages will become apparent from the following detailed description. The elements and structures shown in the drawings are not necessarily drawn to scale. Like reference symbols refer to like or corresponding elements and structures.

[0023] Fig. 1A shows a schematic cross-sectional view of a sensor according to embodiments.

[0024] Fig. 1B shows a view of a front side of a sensor according to embodiments.

[0025] Fig. 1C shows a view of a back side of a sensor according to embodiments.

[0026] Fig. ID illustrates the principle of spectral resolution of the detected electromagnetic radiation.

[0027] Fig. 2A shows a cross-sectional view of a sensor according to further embodiments.

[0028] Fig. 2B shows a cross-sectional view of a sensor according to further embodiments.

[0029] Fig. 2C shows a cross-sectional view of a sensor according to further embodiments.

[0030] Figs. 3A to 3C illustrate a method for manufacturing a sensor according to embodiments. Figs. 4A and 4B illustrate a method for manufacturing a sensor according to further embodiments.

[0031] Fig. 5A shows an example of a sensor with a control circuit.

[0032] Fig. 5B summarizes a method for manufacturing a sensor.

[0033] Fig. 5C illustrates an electronic device according to embodiments.

[0034] Fig. 5D summarizes a method for operating a sensor.

[0035] In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure, and in which specific embodiments are shown for purposes of illustration. In this context, directional terminology such as "top," "bottom," "front," "back," "over," "on," "in front of," "behind," "fore," "rear," etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology is for the purpose of explanation only and is in no way limiting.

[0036] The description of the embodiments is not limiting, as other embodiments exist and structural or logical changes may be made without departing from the scope defined by the claims. In particular, elements of embodiments described below may be combined with elements of other described embodiments, unless the context indicates otherwise.

[0037] The terms "wafer" or "semiconductor substrate" used in the following description can encompass any semiconductor-based structure having a semiconductor surface. Wafer and structure are to be understood as including doped and undoped semiconductors, epitaxial semiconductor layers, optionally supported by a base substrate, and other semiconductor structures. For example, a layer of a first semiconductor material can be grown on a growth substrate of a second semiconductor material, for example a GaAs substrate, a GaN substrate, or a Si substrate, or of an insulating material, for example a sapphire substrate.

[0038] Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, which can be used to generate ultraviolet, blue, or longer-wavelength light, for example, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds, which can be used to generate green or longer-wavelength light, for example, such as GaAsP, AlGaInP, GaP, AlGaP, as well as other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2Oa, diamond, hexagonal BN, and combinations of the materials mentioned. The stoichiometric ratio of the compound semiconductor materials can vary. Further examples of semiconductor materials can include silicon, silicon-germanium, and germanium.In the context of this description, the term "semiconductor" also includes organic semiconductor materials. The term "substrate" generally includes insulating, conductive or semiconductor substrates.

[0039] The term "vertical," as used in this description, is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction may, for example, correspond to a growth direction during layer growth.

[0040] The terms "lateral" and "horizontal," as used in this description, are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This may, for example, be the surface of a wafer or a chip (die).

[0041] The horizontal direction can, for example, lie in a plane perpendicular to a growth direction during the growth of layers.

[0042] In the context of this description, the term "electrically connected" means a low-resistance electrical connection between the connected elements. The electrically connected elements do not necessarily have to be directly connected to one another. Additional elements may be arranged between electrically connected elements.

[0043] The term "electrically connected" also includes tunnel contacts between the connected elements.

[0044] Fig. 1A shows a cross-sectional view of a sensor 10 according to embodiments. The sensor comprises an array of sensor elements 100i, 1002...100 nEach of the sensor elements 1002 comprises an individually readable detector element 1052 and a filter element 1092 arranged above the detector element 1052. The filter element 1092 comprises a first compound semiconductor material 135 having a region 112 with a composition ratio that changes along a vertical direction. At least two filter elements 109 i f 109 i+1 have different layer thicknesses of the semiconductor material 135.

[0045] As illustrated in Fig. 1A, the individual detector elements 105i can comprise a semiconductor diode. For example, the semiconductor diode can be embodied as a PN or PIN diode. The detector element 105i can, for example, comprise a p-type semiconductor layer 115, an i-type semiconductor layer 116 and an n-type semiconductor layer 120, which are arranged one above the other. The i-type semiconductor layer 116 can be omitted. For example, a first intermediate layer 123 can be arranged between a surface of the p-type semiconductor layer 115 and the corresponding filter element 109i. The first intermediate layer 123 can comprise a plurality of layers. The first intermediate layer 123 can comprise suitable layers, for example buffer layers or other layers. Furthermore, a second intermediate layer 125 can be arranged adjacent to an exposed surface of the n-type semiconductor layer 120.The second intermediate layer 125 may comprise multiple layers. The second intermediate layer 125 may include suitable superlattice structures, for example, for adjusting lattice constants or for lattice constant overphasing, buffer layers, stress-reducing layer sequences, and others.

[0046] A p-contact element 114 is electrically connected to the p-type semiconductor layer 115. An n-contact element 121 is electrically connected to the n-type semiconductor layer 120. For example, the p-contact element 114 and the n-contact element 121 can be contacted from a rear side of the sensor 10. The individual detector elements 105i can each be controlled individually via the p-contact element 114 and the n-contact element 121. The detector elements 105i can each have an identical structure.

[0047] It is self-evident that the specified structure of the individual detector elements 105i is to be understood merely as an example and that the detector elements 105i can be designed in any other manner.

[0048] For example, the detector element 105i may be formed in a second compound semiconductor material, wherein at least one composition element of the second compound semiconductor material is a component of the first compound semiconductor material 135. Accordingly, the semiconductor layers 115, 116, 120 may, for example, comprise the second compound semiconductor material.

[0049] According to further embodiments, however, the detector element 105i can also be formed from a semiconductor material that is different from the first compound semiconductor material 135. For example, the detector element 105i can be formed from silicon. Accordingly, the semiconductor layers 115, 116, 120 can also contain silicon or be made of silicon.

[0050] In general, a second compound semiconductor material or semiconductor material of the detector elements 105i can be selected such that the electromagnetic radiation selectively transmitted through the filter elements 109i is detectable. The lower detection limit can be determined by the selection. As illustrated in Fig. 1A, at least two of the filter elements 109i, 109 i+1a different layer thickness along a vertical direction, for example, the z-direction. For example, the filter elements 109i can each have a region 111 with a constant composition ratio and a region 112 with a changing composition ratio.

[0051] Due to the changing composition ratio, the band gap and thus the electromagnetic radiation transmitted through the respective filter element 109i also varies. In particular, a band gap of the first compound semiconductor material 135 decreases with increasing distance from a surface of the associated detector element. For example, the composition ratio changes monotonically, i.e., the concentration of a component increases or decreases monotonically along the vertical direction. As a result, the band gap of the first compound semiconductor material decreases monotonically with increasing distance from the surface of the associated detector element.

[0052] As a result, referring to Fig. 1A, the filter element 109i absorbs a comparatively small wavelength range compared to the filter element 109 nA comparatively large wavelength range or energy range is transmitted and detected by the detector element 105i. The filter element 109 n absorbs a comparatively large wavelength range. Accordingly, only a small wavelength range or energy range is transmitted and detected by the detector element 105 n detected. The filter element 109 n The transmitted wavelength range is the higher wavelength range with lower energy relative to the broad wavelength range transmitted by the filter element 109i. This will be explained in more detail with reference to Fig. 1D.

[0053] Fig. 1B shows a top view of the sensor 10. As can be seen, the individual filter elements 109i can each be arranged in rows and columns. For example, within a column, the layer thickness of the first compound semiconductor layer 135 can be identical and can increase or decrease along a row direction.

[0054] Fig. 1C shows a view of the underside of the sensor. As can be seen, a plurality of p-contact elements 114 and n-contact elements 121 are arranged in rows and columns. By contacting and controlling the corresponding p-contact elements 114 and n-contact elements 121, individual sensor elements 1001 can be specifically addressed.

[0055] As shown in Fig. 1A, the layer thickness of the first compound semiconductor layer 135 varies among the filter elements 1091. Examples of suitable compound semiconductor materials include Al x Gai-x As . For example, x can vary in a range from 0.4 to 0.05 . For example, x can decrease in the vertical direction, so that areas near a surface of the detector elements have a higher Al content than areas further away from the surface of the detector elements . Al x Gai- x As has a lattice constant that is largely independent of the composition ratio. Accordingly, Al x Gai- x As with different composition ratios can be formed largely stress-free. According to embodiments, the second compound semiconductor material can contain GaAs. Accordingly, the detector elements 105i can detect electromagnetic radiation with an energy greater than 1.4 eV. By virtue of the fact that, as shown in Fig. 1A, the detector element 109 ncovers a large band gap range , only electromagnetic radiation with an energy that is greater than the largest band gap of the first compound semiconductor material 135 is passed through the filter element 109 n passed through and then by the detector element 105 n Conversely, a large wavelength range is transmitted by the filter element 109+ and detected by the detector element 105+. An intermediate wavelength range is transmitted by an intermediate filter element 109i and detected by the detector element 105i.

[0056] Fig. ID shows examples of measured intensities of electromagnetic radiation at the individual detector elements 105i, 1052, 105I, 1051+1, - 105 n -i , 105 nAn example of an intensity distribution to be resolved is shown in the inset image top right, together with absorption coefficients for different composition ratios of the first compound semiconductor material.

[0057] The minimum of the detected intensity at detector element i corresponds, for example, to the intensity minimum of the radiation to be detected. As can be seen in Fig. 1D, the intensity in the area i is obtained, for example, by directly comparing the intensity signals of neighboring detector elements 105m, 105i. More precisely, by comparing the intensities in neighboring detector elements, a conclusion can be drawn about the intensity contribution of the spectrum in the corresponding interval. By pixel-fine ablation, it is possible to adjust which energies are still filtered out or absorbed by the pixel layer and do not reach the associated detector element 105+. The filter material can comprise any compound semiconductor materials whose band gap can be varied by changing the composition ratio. Further examples of suitable material systems include x AlyGaioo-x- y N, Inx Gaioo- x Ace y P 100-y or In x GAioo- x Ace y SBioo-y - For example, a material system can be selected in which the lattice constant changes only slightly with change in the composition ratio.

[0058] Fig. 2A shows a cross-sectional view of a sensor 10 according to further embodiments. The sensor 10 has identical or similar components to the sensor shown in Fig. 1A. In addition, a cover element or a mask layer 128 is provided at the edge of each filter element 109i. The cover element 128 covers the side flanks. The cover element 128 can further cover part of the surface in the edge region of each filter element 109i. The cover element 128 can, for example, comprise a non-light-permeable material or a material that is not transparent to the incident electromagnetic radiation. Specific examples include, for example, any metals or polymers, for example silicone, which can contain suitable additives, for example soot particles, optionally with a passivating, for example insulating, intermediate layer.The cover element 128 can reduce crosstalk between adjacent sensor elements 1001.

[0059] Fig. 2B shows a cross-sectional view of a sensor according to further embodiments. In addition to elements shown in Fig. 1A or 2A, a filter layer 131 is arranged above the filter elements 109i. For example, the filter layer 131 can comprise a bandpass filter that can filter out the irrelevant part of the spectrum. As a result, the signal-to-noise ratio can be increased. For example, the filter layer can be realized as a dielectric mirror or comprise another semiconductor material, for example with a larger band gap, which can be, for example, greater than 3 eV. The filter layer 131 can be used for all sensor elements 1002, 1002, ...100 n be identical .

[0060] Furthermore, a passivation layer can be arranged over the filter elements 109i. The passivation layer 130 can, for example, comprise SiO2, SiN or another material that is transparent to the incident electromagnetic radiation. The passivation layer can, for example, reduce oxidative stress. According to further embodiments, impurities, lattice defects or lattice defects can be incorporated into the passivation layer or first compound semiconductor material layer. For example, a concentration of lattice defects or lattice defects on the order of IO -8 to IO - 9be included. According to further embodiments, a semiconductor material with an indirect band gap, for example silicon, can also be incorporated. The impurities, lattice defects or the semiconductor material with an indirect band gap facilitate non-radiative recombination of the charge carriers generated in the filter element 1092. The passivation layer can, for example, have a layer thickness of greater than 50 nm. For example, the layer thickness can be less than approximately 3 pm. For example, the layer thickness can be a few hundred nm.

[0061] According to embodiments, the composition of the first compound semiconductor material 135 may change continuously. However, according to further embodiments, the composition may also change stepwise. For example, each of the filter elements 1092 may comprise a plurality of sublayers 1332, ... 133 nwhich each have a different composition ratio. For example, the composition ratio can change monotonically in a vertical direction from sublayer to sublayer, i.e. the proportion of a component can only increase but not decrease from sublayer to sublayer. In this embodiment, the composition ratio within a sublayer is constant. As a result, for example, the lattice constant of the first compound semiconductor material can also be constant. By a suitable selection of corresponding material regions, for example four to five material regions, the individual regions can also be covered with an almost constant lattice constant. As a result, stress-free and therefore arbitrarily thick layer growth is possible.

[0062] As will be explained below, the respective different layer thicknesses of the first compound semiconductor layer 135 are achieved, for example, by etching back. In this case, an etching process can be selected in which the etching rate is strongly dependent on the material composition.

[0063] 3A to 3C illustrate a method for manufacturing the sensor according to embodiments. For example, the detector elements 105i can first be formed in a suitable material system. Fig. 3A shows a cross-sectional view of the finished detector elements 105i. Then, a first compound semiconductor material layer 135 is applied with a composition ratio that changes in the vertical direction. As explained with reference to Fig. 2C, the composition of the first compound semiconductor layer 135 can change continuously or stepwise. The composition ratio changes such that the band gap decreases with increasing distance from a surface of the detector elements 105i. For example, the first compound semiconductor material can be selected such that the lattice constant remains constant as a result of the change in the composition ratio. Fig.3B shows an example of a resulting workpiece.

[0064] Subsequently, an etching process is performed, wherein different regions of the first compound semiconductor material layer 135 are etched to different depths. For example, the step profile shown in Fig. 3C may result. Subsequently, for example, the individual filter elements 109i may be separated from one another by etching, resulting in the structure shown in Fig. 1A or 2A.

[0065] According to further embodiments, as shown in Fig. 4A, the individual filter elements 109i can also be formed on a separate carrier 137. For example, this can be done by forming a first compound semiconductor layer 135 over the carrier 137 and then etching it back. Subsequently, as further shown in Fig. 4A, the carrier 137 with the filter elements 109i can be connected to an array of detector elements 105i.

[0066] The result may be the arrangement shown in Fig. 4B. For example, this approach may be advantageous if different material systems are used for the filter elements 109i and the detector elements 105i.

[0067] Fig. 5A shows an example of a sensor 10 with different sensor areas Hi, I I2, Ha. The sensor areas each contain arrangements of sensor elements in which the individual filters are based on different material systems. By cleverly combining different material systems, a large energy range in a range from <0.5 eV to >3 eV can be covered, i.e. the NIR to N-UV range. As is also shown in Fig. 5A, the filter elements can have a different layer thickness within each individual sensor area Hi, I I2, H3. Fig. 5A further illustrates a control logic 139 for controlling the respective detector elements 105i and for readout.

[0068] The special design of the individual filter elements makes it possible to tune the absorption properties of a sensor over a wide range. In particular, when the composition ratio within the first compound semiconductor layer changes continuously, the absorption or detection edges can be tuned continuously. This results in a wide variability in the tuning of the detection wavelength ranges to be separated from one another. The design of the sensor means that the collected light is used more efficiently than with conventional sensors. In particular, the filter area filters out that portion of the spectrum which is not to be detected by the corresponding detector area. A comparison of detected intensities allows conclusions to be drawn about the spectrum portion.Accordingly, a higher proportion of the incoming electromagnetic radiation is fed to the sensor and thus not filtered.

[0069] Fig. 5B summarizes a method for manufacturing a sensor with an array of sensor elements, each having an individually readable detector element and a filter element arranged above an associated detector element. The method comprises forming (S 100) a plurality of filter elements, each containing a first compound semiconductor material with a composition ratio varying along a vertical direction, and

[0070] Removing ( S 110 ) a part of the first compound semiconductor material of at least one filter element so that different layer thicknesses of the first compound semiconductor material are achieved over at least two detector elements .

[0071] Fig. 5C shows an electronic device 15 comprising the sensor 10 as described above. The electronic device 15 can, for example, be selected from an exploration satellite suitable for determining surfaces (earth, vegetation, water, etc.), exploring natural resources, or making meteorological forecasts. Other examples of the electronic device 15 include an analysis device, for example for biomedical applications, for example for examining (skin) burns, documents, works of art, or for monitoring the growth of plants in the horticulture sector or generally in the military sector.

[0072] Fig. 5D summarizes a method for operating a sensor as described above. The method comprises reading (S200) detector signals from at least two sensor elements, each having different layer thicknesses of the filter element, and determining (S210) a spectral signal from the difference between the detector signals.

[0073] Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that numerous alternative and / or equivalent embodiments may be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

[0074] LIST OF REFERENCE SYMBOLS

[0075] 10 Sensor

[0076] 111 , 112 , 113 Sensor area

[0077] 15 electronic device

[0078] 1001 , 1002, . . . 1001 , ...100 n Sensor element

[0079] 105i , 1052, ...105i , ...105 n Detector element

[0080] 109i , 1092, ...109i , ...109 n filter element

[0081] 111 Area with constant composition ratio

[0082] 112 Area with changing composition ratio

[0083] 114 p-contact element

[0084] 115 p-type semiconductor layer

[0085] 116 i-type semiconductor layer

[0086] 120 n-type semiconductor layer

[0087] 121 n-contact element

[0088] 123 first intermediate layer

[0089] 125 second intermediate layer

[0090] 128 Cover element

[0091] 130 Passivation layer

[0092] 131 filter layer

[0093] 1332, 1332, ...133i , . . 133 n lower class

[0094] 135 first compound semiconductor material

[0095] 137 carriers

[0096] 139 Control logic

[0097] 140 Evaluation interface

Claims

CLAIMS 1. Sensor (10) comprising an arrangement of sensor elements (1002, 1002, ...100 n ), each of which has an individually readable detector element (1052, 1052, ...105 n ) and a filter element (1092, 1092, ...109 n ), wherein the filter element (1092, 1092, ...109 n ) contains a first compound semiconductor material (135) with a composition ratio that changes along a vertical direction, wherein the first compound semiconductor material (135) is a III-V semiconductor material that contains elements of group III and at least one element of group V, and the proportion of the elements of group III changes along the vertical direction and the proportion of the at least one element of group V remains greater than zero, at least two filter elements (1092, 1092, ...109 n) have mutually different layer thicknesses of the first compound semiconductor material (135).

2. Sensor (10) according to claim 1, further comprising a cover element (128) arranged between two adjacent filter elements (1092, 1092, ...109 n ) is arranged.

3. Sensor (10) according to claim 2, wherein the cover element (128) covers part of a surface of the filter elements (1092, 1092, ...109 n ) covered.

4. Sensor (10) according to one of the preceding claims, further comprising a filter layer (131) over the filter elements (1092, 1092, ...109 n ) .

5. Sensor (10) according to one of the preceding claims, wherein the composition ratio changes continuously.

6. Sensor (10) according to one of claims 1 to 4, wherein the composition ratio changes in steps.

7. Sensor (10) according to one of the preceding claims, wherein the detector element (1052, 1052, ...105 n) is formed in a second compound semiconductor material and at least one composition element of the second compound semiconductor material is a component of the first compound semiconductor material (135).

8. Sensor (10) according to one of claims 1 to 6, wherein the Detector element (1052, 1052, ...105 n ) is formed in a semiconductor material different from the first compound semiconductor material (135).

9. Sensor (10) according to one of the preceding claims, wherein at least two detector elements (1052, 1052, ...105 n ) are identical.

10. Sensor (10) according to one of the preceding claims, wherein a band gap of the first compound semiconductor material (135) with increasing distance from a surface of the associated detector element (1052, 1052, ...105 n ) decreases.

11. Sensor (10) according to one of the preceding claims, wherein the first compound semiconductor material layer additionally contains impurities, lattice defects, lattice defects or a semiconductor material with an indirect band gap.

12. Sensor (10) according to one of the preceding claims, further comprising a transparent, insulating passivation layer over the first compound semiconductor layer, wherein the passivation layer contains impurities, lattice vacancies, lattice defects or a semiconductor material with an indirect band gap.

13. Method for producing a sensor (10) with an arrangement of sensor elements (100 lz 1002, ...100 n ), each of which has an individually readable detector element (1052, 1052, ...105 n ) and one above an associated detector element (1052, 1052, ...105 n ) arranged filter element (1092, 1092, ...109 n ), comprising: Forming (S100) a plurality of filter elements (1092, 1092, ...109 n ) each containing a first compound semiconductor material (135) with a composition ratio varying along a vertical direction, wherein the first compound semiconductor material (135) is a III-V semiconductor material containing elements of group III and at least one element of group V, and the proportion of the elements of group III varies along the vertical direction and the proportion of the at least one element of group V remains greater than zero, Removing (S110) a part of the first compound semiconductor material (135) of at least one filter element (1092, 1092, ...109 n ) , so that at least two detector elements (1052, 1052, ...105 n ) different layer thicknesses of the first compound semiconductor material (135) can be achieved.

14. The method according to claim 13, wherein forming the plurality of filter elements (1092, 1092, ...109 n ) applying a first compound semiconductor material (135) over the array of sensor elements (1002, 1002, ...100 n ) and the Part of the first compound semiconductor material (135) after applying the first compound semiconductor material (135) over the arrangement of sensor elements (1002, 1002, ...100 n ) is removed.

15. The method according to claim 13, wherein the filter elements (1092, 1092, ...109 n ) after removing the part of the first compound semiconductor material (135) above the detector elements (1052, 1052, ...105 n ) can be applied.

16. Electronic device (15) comprising the sensor (10) according to one of claims 1 to 12.

17. The electronic device of claim 16, which is selected from an exploration satellite or an analysis device.

18. A method for operating a sensor according to any one of claims 1 to 12, comprising: Reading (S200) of detector signals of at least two sensor elements (1002, 1002, ...100 n ), each with different layer thicknesses of the filter element (1092, 1092, ...109 n ) and Determining (S210) a spectral signal from the difference between the detector signals.

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