Isotope cell and electric power device

Abstract

Provided is an isotope cell, including a plurality of isotope unit cells that includes an electrode including a first electrode and a second electrode, a radioactive source arranged between the first electrode and the second electrode, and an energy conversion layer arranged between the first electrode and the second electrode, and a connector that is arranged in at least some of gaps each existing between any adjacent isotope unit cells among the plurality of isotope unit cells, and electrically connects each electrode of the adjacent isotope unit cells.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2024-0129039, filed on September 24, 2024, in the Korean Intellectual Property Office.FIELD OF THE INVENTION

[0002] The present invention relates to an isotope cell and an electric power device including the isotope cell.BACKGROUND

[0003] A radio-isotope is an element that decays into a stable isotope while emitting radiation. Alpha decay, beta decay, and gamma decay are known as the ways in which a radio-isotope decays. A radio-isotope emits alpha rays, beta rays, or gamma rays while it decays, depending on the type. Meanwhile, the time it takes for the amount of radioactivity to decrease to half of its initial amount as a radio-isotope decays is called a half-life period. The type of radiation emitted by decay and the half-life period are determined, depending on the types of radio-isotopes.

[0004] The isotope cell is a battery that converts nuclear fission energy of radio-isotopes into electrical energy for use as an electrical power source. For example, a beta-voltaic cell is a battery that uses beta rays that are emitted from a radio-isotope. The beta rays are absorbed by a P-N junction semiconductor, thereby forming electron-hole pairs in the depletion region and enabling use of an electric power source through the generated electrons and holes.SUMMARY OF THE INVENTION

[0005] It is an object of the invention to provide an isotope cell and an electric power device that can generate high-density power, so as to be applied to electronic products requiring high power.

[0006] To this end, the present invention provides an isotope cell in accordance with claim 1. Advantageous embodiments are subject to the dependent claims and the following description, referring to the drawings.

[0007] According to an aspect of the present invention, an isotope cell may comprise: a plurality of isotope unit cells arranged above one another in a stack direction with a cell gap formed between adjacent isotope unit cells, each isotope unit cell including: an electrode structure including a first electrode and a second electrode, a radioactive source arranged between the first electrode and the second electrode, and an energy conversion layer arranged between the first electrode and the second electrode; and a connector structure that is arranged in at least some of the cell gaps and electrically connects the electrode structures of the adjacent isotope unit cells.

[0008] Further, the connector structure may include a first connector and a second connector, wherein within each cell gap, a first connector electrically connects first electrodes of adjacent isotope unit cells and / or a second connector electrically connects second electrodes of adjacent isotope unit cells.

[0009] Furthermore, the isotope cell may further comprise an insulating layer that is arranged in at least some of the cell gaps. Herein, the connector structure may run through the insulating layer, electrically connecting the adjacent isotope unit cells.

[0010] The first electrode and the second electrode may be spaced apart from each other in a spacing direction which is perpendicular to the stack direction, so that an electrode gap is formed therebetween. Furthermore, the energy conversion layer may be arranged in the electrode gap, with respect to the spacing direction, between the first electrode and the radioactive source or between the second electrode and the radioactive source.

[0011] Preferably, the energy conversion layer may include an N-type semiconductor and a P-type semiconductor. Herein, the N-type semiconductor may be arranged, with respect to the spacing direction, in the electrode gap between the P-type semiconductor and the radioactive source. The P-type semiconductor may be arranged, with respect to the spacing direction, in the electrode gap between the N-type semiconductor and the first electrode.

[0012] Desirably, the isotope unit cell may further include a hole transport layer which is arranged, with respect to the spacing direction, in the electrode gap between the first electrode and the P-type semiconductor.

[0013] Optionally, in at least some of the plurality of isotope unit cells, the energy conversion layer may surround at least a portion of the first electrode. Furthermore, the radioactive source may surround at least a portion of the energy conversion layer. Additionally, the second electrode may surround at least a portion of the radioactive source. Otherwise, the radioactive source may surround at least a portion of the first electrode. Furthermore, the energy conversion layer may surround at least a portion of the radioactive source. Additionally, the second electrode may surround at least a portion of the energy conversion layer.

[0014] Besides, the N-type semiconductor may surround at least a portion of the P-type semiconductor. Moreover, the P-type semiconductor may surround at least a portion of the first electrode.

[0015] The energy conversion layer may contact at least a portion of the radioactive source.

[0016] Meanwhile, at least one of the first electrode and the second electrode may include a through hole extending through the entire length of the respective electrode in the stack direction. Furthermore, the connector structure may include a section arranged in at least a portion of the through hole.

[0017] Possibly, at least some of the plurality of isotope unit cells may further include a dielectric layer that surrounds at least a portion of the first electrode.

[0018] Optionally, the isotope cell may further comprise: a shielding member that houses the plurality of isotope unit cells and the connector.

[0019] Preferably, the energy conversion layer may not overlap the radioactive source when viewed in the stack direction.

[0020] The radioactive source may be embedded either in the first electrode or the second electrode, being exposed outwardly along the stack direction through only one side.

[0021] Besides, the energy conversion layer may contacts at least a portion of the radioactive source, at least a portion of the first electrode, and at least a portion of the second electrode.

[0022] According to an aspect of the present invention, an isotope cell may include: a plurality of isotope unit cells including an electrode that includes a first electrode and a second electrode, a radioactive source arranged between the first electrode and the second electrode, and an energy conversion layer arranged between the first electrode and the second electrode but not overlapping the radioactive source when viewed in a first direction perpendicular to an upper surface of the electrode; and a connector that is arranged in at least some of gaps each existing between any adjacent isotope unit cells among the plurality of isotope unit cells, and electrically connects each electrode of the adjacent isotope unit cells.

[0023] According to a further aspect, the energy conversion layer may be configured to generate electron-hole-pairs upon receiving radiation irradiated by the radioactive source. For example, the energy conversion layer may comprise at least two sub-layers which, at an interface, define a p-n-junction.

[0024] The connector may include a first connector electrically connecting each first electrode of the adjacent isotope unit cells and a second connector electrically connecting each second electrode of the adjacent isotope unit cells.

[0025] The isotope cell may further include an insulating layer that is arranged in at least some of the gaps existing between the any adjacent isotope unit cells of the plurality of isotope unit cells, in which the connector may penetrate through the insulating layer.

[0026] At least some of the plurality of isotope unit cells may have the energy conversion layer surrounding at least a portion of the first electrode, the radioactive source surrounding at least a portion of the energy conversion layer, and the second electrode surrounding at least a portion of the radioactive source.

[0027] The energy conversion layer may include an N-type semiconductor and a P-type semiconductor, the N-type semiconductor may surround at least a portion of the P-type semiconductor, and the P-type semiconductor may surround at least a portion of the first electrode.

[0028] The isotope unit cell may further include a hole transport layer that is arranged between the first electrode and the N-type semiconductor.

[0029] In at least some of the plurality of isotope unit cells, an energy conversion layer may be in contact with at least a portion of the radioactive source.

[0030] In at least some of the plurality of isotope unit cells, the first electrode and the second electrode may include a through hole penetrated along a first direction perpendicular to an upper surface of the electrode, and the connector may include a region arranged in at least a portion of the through hole.

[0031] The energy conversion layer may contact at least a portion of the radioactive source.

[0032] At least one of the first electrode and the second electrode may include a through hole penetrated along a first direction perpendicular to an upper surface of the electrode, and the connector may include a region arranged in at least a portion of the through hole.

[0033] At least some of the plurality of isotope unit cells may further include a dielectric layer that surrounds at least a portion of the first electrode.

[0034] The isotope cell may further include a shielding member that houses the plurality of isotope unit cells and the connector.

[0035] In at least some of the plurality of isotope unit cells, the radioactive source may surround at least a portion of the first electrode, the energy conversion layer may surround at least a portion of the radioactive source, and the second electrode may surround at least a portion of the energy conversion layer.

[0036] In at least some of the plurality of isotope unit cells, the energy conversion layer may include a first energy conversion layer and a second energy conversion layer, the radioactive source may surround at least a portion of the first energy conversion layer, and the second energy conversion layer may surround at least a portion of the radioactive source.

[0037] According to another aspect, an isotope cell may include: a plurality of isotope unit cells that include an electrode including a first electrode and a second electrode, an energy conversion layer arranged between the first electrode and the second electrode, and a radioactive source arranged on at least one of the first electrode and the second electrode; and a connector that is arranged in at least some of gaps each existing between any adjacent isotope unit cells among the plurality of isotope unit cells, and electrically connects between the respective electrodes of the adjacent isotope unit cells.

[0038] In at least some of the plurality of isotope unit cells, the radioactive source may not penetrate through the first electrode or the second electrode along a first direction perpendicular to an upper surface of the electrode.

[0039] In at least some of the plurality of isotope unit cells, the energy conversion layer may contact at least a portion of the radioactive source, at least a portion of the first electrode, and at least a portion of the second electrode.

[0040] In at least some of the plurality of isotope unit cells, the energy conversion layer may include an N-type semiconductor and a P-type semiconductor, the N-type semiconductor surrounds at least a portion of the P-type semiconductor, and the P-type semiconductor surrounds at least a portion of the first electrode, and the radioactive source may be arranged on the second electrode, but may not penetrate through the second electrode along a first direction perpendicular to an upper surface of the electrode.

[0041] In at least some of the plurality of isotope unit cells, when viewed in a first direction perpendicular to the upper surface of the electrode, the radioactive source may have an extended shape in a direction away from the energy conversion layer.

[0042] The extended shape may be one of the plurality of extended shapes, and the plurality of extended shapes may not overlap each other when viewed in the first direction.

[0043] In at least some of the plurality of isotope unit cells, the radioactive source may include a first radioactive source arranged on the first electrode and a second radioactive source arranged on the second electrode, and the first radioactive source and the second radioactive source may not overlap each other based on a radiation direction directed outward from a center of the isotope cell.

[0044] According to still another aspect, a power device may include an isotope cell and a load that receives power generated by the isotope cell through a power line. In addition, the power device may include a plurality of isotope unit cells that includes an electrode including a first electrode and a second electrode, a radioactive source arranged between the first electrode and the second electrode, and an energy conversion layer arranged between the first electrode and the second electrode but not overlapping the radioactive source when viewed in a first direction perpendicular to an upper surface of the electrode, and a connector that is arranged in at least some of gaps each existing between any adjacent isotope unit cells among the plurality of isotope unit cells and electrically connects each electrode of the adjacent isotope unit cells, the connector includes a first connector that electrically connects each first electrode of the adjacent isotope unit cells and a second connector electrically connecting each second electrode of the adjacent isotope unit cells, the wire line includes a first wire line that is electrically connected to the first connector and a second wire line that is electrically connected to the second connector, and the load is arranged to be electrically connected to the first wire line and the second wire line.

[0045] The power device may further include: an energy storage device that is electrically connected to the isotope cell through the wire line; and a switching device that connects the wire line to the load or the energy storage device.

[0046] According to a further aspect, it may be possible to provide an isotope cell and a power device that may be applied to electronic products, which require high power, by generating high-density power.BRIEF DESCRIPTION OF THE DRAWINGS

[0047] The drawings provided herein are based on example embodiments of the present invention, and the ratios of the width, length, or thickness (or height) of components are provided for a detailed description of the present invention and may differ from the actual dimensions. In addition, each axis in coordinate systems illustrated in the drawings may be perpendicular to each other, and a direction pointed by an arrow may be a + direction, and a direction (direction rotated by 180°) opposite to the direction pointed by an arrow may be a - direction. FIG. 1 is a perspective view illustrating at least a portion of an isotope cell according to an example embodiment of the present invention. FIG. 2 is a perspective view illustrating a portion of adjacent isotope unit cells in the isotope cell according to an example embodiment of the present invention. FIG. 3 is a plan view illustrating a portion of an isotope unit cell according to an example embodiment of the present invention. FIGS. 4a to 4e are enlarged plan views of portion P of FIG. 3, illustrating an interface between a radioactive source and an energy conversion layer. FIGS. 5a to 5e are enlarged plan views of portion Q of FIG. 3, illustrating an interface between an N-type semiconductor and a P-type semiconductor. FIG. 6 is a plan view illustrating a portion of the isotope unit cell according to an example embodiment of the present invention. FIG. 7 is a plan view illustrating a portion of the isotope unit cell according to an example embodiment of the present invention. FIG. 8 is a plan view illustrating a portion of the isotope unit cell according to an example embodiment of the present invention. FIG. 9 is a plan view illustrating a portion of the isotope unit cell according to an example embodiment of the present invention. FIG. 10 is a perspective view illustrating a portion of adjacent isotope unit cells in the isotope cell according to an example embodiment of the present invention. FIG. 11 is a plan view illustrating a portion of the isotope unit cell according to an example embodiment of the present invention. FIG. 12 is a perspective view illustrating a portion of the isotope unit cell according to an example embodiment of the present invention. FIG. 13 schematically illustrates a structure of a power device according to an example embodiment of the present invention. FIGS. 14 to 16 are plan views illustrating at least a portion of an isotope unit cell according to an example embodiment of the present invention. DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

[0048] Before describing exemplary embodiments of the present invention, the terms or terminologies used herein and claims may not be construed as common meanings or the meanings in dictionaries. Further, the inventor(s) may appropriately define the concepts of terms in accordance with the principle that the inventor(s) may describe their inventions in the best possible way, and the terms should be interpreted in a manner consistent with the technical idea of the present invention. The example embodiments described in this specification and the structures illustrated in the drawings are merely the most example embodiments of the present invention and may not represent the entire technical idea of the present invention. Accordingly, as of the filing date of the present invention, various equivalents and modifications that may replace these may exist.

[0049] The reference numerals or symbols described in the accompanying drawings of the specification may indicate parts or components that perform substantially the same functions. For the convenience of description and understanding, the same reference numbers or symbols may be used for description even in different example embodiments. That is, even if components having the same reference numbers are illustrated in multiple drawings, it may not necessarily mean that all of the multiple drawings represent one embodiment.

[0050] In the following description, singular forms are intended to include plural forms unless the context clearly indicates otherwise. It will be further understood that the terms "comprise" or "constitute" used in this specification specify the presence of stated features, steps, operations, components, parts, or a combination thereof, but do not preclude the presence or addition of one or more other features, numerals, steps, operations, components, parts, or a combination thereof.

[0051] In addition, in the following description, terms such as upper side, upper portion, lower side, lower portion, side, front, and rear are based on the directions illustrated in the drawings, and they may be expressed differently when the direction of the subject changes.

[0052] Further, terms including ordinal numbers such as "first" and "second" may be used in the specification and claims to discriminate components. Such ordinal numbers are used to distinguish the same or similar components from each other, the meanings of terms should not be limited by such ordinal numbers. For example, the order of use or the order or arrangement of a component combined with an ordinal number should not be limited by the number. If necessary, ordinal numbers may be exchanged with each other.

[0053] Hereinafter, example embodiments of the present invention are described in detail with reference to the accompanying drawings. However, the present invention may not be limited to the proposed example embodiments. The shapes and sizes of the components in the drawings may be exaggerated for a clearer explanation.

[0054] FIG. 1 is a perspective view exemplarily illustrating an isotope cell 10. FIG. 2 is a perspective view illustrating a portion of adjacent isotope unit cells 100A and 100B in the isotope cell 10. FIG. 3 is a plan view illustrating the isotope unit cell 100.

[0055] The present invention can provide an isotope cell 10 that can generate high-density energy, which may be applied to electronic products requiring high power. Electronic products requiring high power may be any power-consuming product, for example, semiconductor memories such as DRAM or NAND flash, processors, mobile devices, cars, drones, and computers.

[0056] As exemplarily shown in FIG. 1, the isotope cell 10 may include at least one isotope unit cell 100. For example, the isotope cell 10 may include a plurality of isotope unit cells 100 that are electrically connected. As exemplarily shown, the isotope unit cells 100 may be arranged above one another, e.g., stacked, in a first or stack direction D1. A gap, herein also referred to as cell gap, may be respectively formed between two unit cells adjacent, or neighboring, in the stack direction D1. That is, two adjacent, or neighboring, cells are spaced from each other by a cell gap. The isotope cell 10 may be advantageous in generation of high-density energy by electrically connecting the plurality of isotope unit cells 100.

[0057] The isotope unit cell 100 may include an electrode structure 110. The electrode structure 110 may include an anode that provides electrons and a cathode that receives electrons.

[0058] For example, the electrode structure 110 may include a first electrode 111 and a second electrode 112. The second electrode 112 may be a counter electrode of the first electrode 111. That is, when the first electrode 111 is an anode, the second electrode 112 may be a cathode, and when the first electrode 111 is a cathode, the second electrode 112 may be an anode. In one example, the first electrode 111 may be a cathode and the second electrode 112 may be an anode.

[0059] The electrode structure 110 may be a current collector. The electrode structure 110 is not specifically limited in terms of type, size, and shape as long as it has electrical conductivity without causing physical or chemical changes to the isotope cell 10. For example, the electrode structure 110 may have a cylindrical, tetrahedral, hexahedral, or torus shape. In addition, the electrode structure 110 may have a form in which a central portion is hollow. Further, for example, the electrode structure 110 may include metallic materials such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), may include transparent oxides such as fluorine (F)-doped tin oxide (FTO) or indium tin oxide (ITO, In 2-x Sn x O 3 , 0<x<2), or may include carbon-based compounds such as carbon-nanotubes, graphene, or graphene oxide.

[0060] The first electrode 111 and the second electrode 112 may be arranged spaced apart from each other in a predefined spacing direction D3, e.g., a radial direction, as exemplarily shown in FIGS. 1 to 3. For example, the first electrode 111 may have a cylindrical shape, and the second electrode 112 may be ring shaped, that is, it may have the shape of a hollow cylinder. The first electrode 111 may be arranged in a center of the second electrode 112, so that the second electrode 112 surrounds the first electrode 111. However, the invention is not limited to this configuration. Generally, it may be advantageous when the second electrode 112 has the shape of a closed frame and surrounds the first electrode 111. More generally, the first electrode 111 and the second electrode 112 may be arranged spaced in the spacing direction D3 so that a gap is formed therebetween. Said gap, herein, is also referred to as an electrode gap.

[0061] The isotope unit cell 100 may include a radioactive source 120. The radioactive source 120 may be arranged between the first electrode 111 and the second electrode 112. In particular, the radioactive source 120 may be arranged between the first electrode 111 and the second electrode 112 with respect to the spacing direction D3, e.g., the radial direction. That is, the radioactive source 120 may be arranged within the electrode gap formed between the first electrode 111 and the second electrode 112.

[0062] For example, the radioactive source 120 may include a radio-isotope. The radioactive source 120 may include a radioactive isotope that emits radiation. Examples of the radio-isotope, may include isotopes emitting alpha rays including one or more selected from the group consisting of americium-241 ( 241< Am), americium-243 ( 243< Am), polonium-209 ( 209< Po), polonium-210 ( 210< Po), plutonium-238 ( 238< Pu), plutonium-239 ( 239< Pu), curium-242 ( 242< Cm), curium-244 ( 244< Cm), curium-249 ( 249< Cm), promethium-147 ( 147< Pm), uranium-238 ( 238< U), thorium-232 ( 232< Th), radium-226 ( 226< Ra), bismuth-210 ( 210< Bi), neptunium-237 ( 237< Np), europium-152 ( 152< Eu), francium-223 ( 223< Fr), astatine-210 ( 210< At), protactinium-231 ( 231< Pa), einsteinium-253 ( 253< Es), californium-252 ( 252< Cf), and berkelium-249 ( 249< Bk). In another example, the radio-isotope may include isotopes emitting beta rays including one or more selected from the group consisting of tritium ( 3< H), calcium-45 ( 45< Ca), nickel-63 ( 63< Ni), copper-67 ( 67< Cu), strontium-90( 90< Sr), promethium-147( 147< Pm), osmium-194 ( 194< Os), thulium-171 ( 171< Tm), tantalum-179 ( 179< Ta), cadmium-109 ( 109< Cd), germanium-68 ( 68< Ge), cerium-159 ( 159< Ce), and tungsten-181 ( 181< W). In another example, the radio-isotope may include a gamma-emitting isotope including one or more of cobalt-60 ( 60< Co), cesium-137 ( 137< Cs), iodine-131 ( 131< I), gallium-67 ( 67< Ga), and thallium-201 ( 201< T1). The radio-isotope included in the radioactive source 120 may include an alpha-emitting isotope. The radio-isotope included in the radioactive source 120 may include a beta-emitting isotope. The radio-isotope included in the radioactive source 120 may include one or more of an alpha-emitting isotope and a beta-emitting isotope. The radio-isotope included in the radioactive source 120 may include one or more of an isotope that emits alpha rays, an isotope that emits beta rays, and an isotope that emits gamma rays.

[0063] In one example, the radioactive source 120 may be manufactured by one or more of, for example, electroplating, electroless plating, and chemical vapor deposition (CVD), but is not limited thereto. Among these, the electroplating (electroplating) method may be appropriate considering radiation shielding and safety of a worker.

[0064] In one example, the radioactive source 120 may be manufactured into a plating solution for electroplating. For example, when nickel-63 ( 63< Ni) is used as the radioactive source 120, nickel-63 ( 63< Ni) may be manufactured by irradiating nickel-62 ( 62< Ni) with neutrons to manufacture nickel-63 ( 63< Ni), and then chlorinating nickel-63 ( 63< Ni) to produce 63< NiCl 2 , thereby manufacturing a nickel-63 ( 63< Ni) plating solution. Alternatively, nickel-62 ( 62< Ni) may be first chlorinated to produce 62< NiCl 2 , and then irradiated with neutrons to produce a nickel-63 ( 63< Ni) plating solution containing 63< NiCl 2 , but is not limited thereto.

[0065] In one example, the plating solution may further include additives such as a pH regulator and a pH stabilizer, which may help uniformly form the radioactive source 120 by controlling the speed or growth rate of plating.

[0066] The isotope unit cell 100 may include an energy conversion layer 130 that is arranged between the first electrode 111 and the second electrode 112. Preferably, the energy conversion layer 130 does not overlap with the radioactive source 120 when viewed in the first direction D1 that is perpendicular to an upper, or top, surface 100US of the isotope unit cell 100. In other words, the energy conversion layer 130 may be arranged between the first electrode 111 and the second electrode 112 without overlapping with the radioactive source 120 in the spacing direction, e.g., the radial direction D3. That is, the radioactive source 120 and the conversion layer 130, preferably, are not arranged on top of or above each other in the vertical or stack direction D1. Generally, the energy conversion layer 130 may be arranged in the gap between the first electrode 111 and the second electrode 112, in a space not occupied by the radioactive source 120. Hence, the energy conversion layer 130 may either be arranged between the radioactive source 120 and the first electrode 111, as exemplarily shown in FIG. 3, or between the radioactive source 120 and the second electrode 112. Otherwise, the energy conversion layer 130 may be arranged in both spaces.

[0067] The first or upper surface 100US, which is the top surface of the isotope unit cell 100 in the first direction D1, may include an upper surface 110US, which is the top surface of the electrode structure 110 in the first direction D1. The upper surface 100US of the isotope unit cell 100 may be planar. For example, the upper surface 110US of the electrode structure 110, an upper surface of the radioactive source 120, and an upper surface of the energy conversion layer 130 may form a common plane. In addition, a lower surface 100BS of the isotope unit cell 100 is oriented opposite to the upper surface 100US of the isotope unit cell 100 in the first direction D1. The lower surface 100BS may include a lower surface 110BS of the electrode structure 110, which is oriented opposite to the upper surface 110US of the electrode structure 110. The lower surface 100BS of the isotope unit cell 100 may be planar. For example, the lower surface 110BS of the electrode structure 110, a lower surface of the radioactive source 120, and a lower surface of the energy conversion layer 130 may form a common plane.

[0068] In addition, the first direction D1 is perpendicular to the upper surface 100US of the isotope unit cell 100, as well as the upper surface 110US of the electrode structure 110. Therefore, in this disclosure, the first direction D1 perpendicular to the upper surface 100US of the isotope unit cell 100 may be understood as referring to the first direction D1 perpendicular to the upper surface 110US of the electrode structure 110. That is, the energy conversion layer 130, arranged between the first electrode 111 and the second electrode 112, may not overlap with the radioactive source 120 when viewed from the first direction D1 perpendicular to the upper surface 110US of the electrode structure 110. When the isotope unit cell 100 has the shape of a cylinder, as exemplarily shown in FIGS. 1 to 3, the first direction D1 may be parallel to the central axis of the cylinder (cylinder axis).

[0069] In one example, the plurality of isotope unit cells 100 may be stacked along one direction. That is, the direction in which the plurality of isotope unit cells 100 are stacked may mean, for example, a first direction D1. By having the structure in which the plurality of isotope unit cells 100 are stacked, it is advantageous in terms of yield and scale-up.

[0070] Unless specifically defined herein, the first direction D1 may mean the direction perpendicular to the upper surface 100US of the isotope unit cell 100. The second direction D2 may mean the direction that intersects (for example, is perpendicular) to the first direction D1 and is horizontal to the upper surface 100US of the isotope unit cell 100. The third direction D3 may intersect (e.g., perpendicular) with the first direction D1 and the second direction D2, and may mean the direction that is horizontal to the upper surface 100US of the isotope unit cell 100.

[0071] The energy conversion layer 130 may be configured to form electron-hole pairs by the radiation rays, e.g., alpha rays, beta rays, or gamma rays, emitted from the radioactive source 120. That is, radiation emitted from the radioactive source 120 may cause formation of electron-hole pairs in the energy conversion layer 130. For example, the energy conversion layer 130 may be an inorganic layer, an organic layer, an organic-inorganic hybrid layer, a dye sensitized layer, or a combination thereof, and can generate electrical energy by forming electron-hole pairs using radiation rays.

[0072] In one example, the inorganic layer may include an inorganic material that receives light and generates electrical energy. The inorganic material may include, but is not limited to, for example, one or more of silicon, single crystal silicon, polycrystalline silicon, amorphous silicon, InGaSe, CuSe, InSe, InGaP, GaAs, a chalcopyrite compound, a perovskite compound, and a kesteride compound.

[0073] InGaSe may include one or more of a single or mixture of In, In 4 Se 3 , InSe, In 2 Se 3 , GaSe, Ga 2 Se 3 , and Se, CuSe may include one or more of a single and mixture of Cu, Cu 2 Se, CuSe 2 , and Se, and InSe may include one or more of a single or mixture of In, In 4 Se 3 , InSe, In 2 Se 3 , and Se. Examples of the chalcopyrite compound may include one of CuAlS 2 , CuAlSe 2 , CuAlTe 2 , CuGaS 2 , CuGaSe 2 , CuGaTe 2 , CuInS 2 , CuInSe 2 , CuInTe 2 , AgAlS 2 , AgAlSe 2 , AgAlTe 2 , AgGaS 2 , AgGaSe 2 , AgGaTe 2 , AgInS 2 , AgInSe 2 , and AgInTe 2 . Examples of the perovskite compound may include one or more of SrTiO 3 and CaTiO 3 . Examples of the kesterite compound may include a group I 2 -II-IV-VI 4 kesterite compound, and specifically may include one or more of Cu 2 ZnSnS 4 , Cu 2 ZnSnSe 4 , Cu 2 ZnGeS 4 , Cu 2 ZnGeSe 4 , Cu 2 MnSnS 4 , Cu 2 MnSnSe 4 , Cu 2 MnGeS 4 , Cu 2 MnGeSe 4 , Ag 2 ZnSnS 4 , Ag 2 ZnSnSe 4 , Ag 2 ZnGeS 4 , Ag 2 ZnGeSe 4 , Ag 2 MnSnS 4 , Ag 2 MnSnSe 4 , Ag 2 MnGeS 4 , and Ag 2 MnGeSe 4 .

[0074] The organic layer may include an organic material that receives light and generates electrical energy. The inorganic material is not particularly limited, but may include, for example, one or more of fullerene (C 60 ) compounds, phenanthroline derivatives such as 2.9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), phenylpyridine derivatives such as 4,6-bis(3,5-di-4-pyridinylphenyl)-2-methylpyrimidine (B4PymPm) or tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane (3TPYMB), thiophene derivatives such as poly(3-hexylthiophene-2,5-diyl)(P3HT), phthalocyanine derivatives, porphyrin derivatives, triarylamine derivatives, carbazole derivatives, and oligothiophenes.

[0075] The organic-inorganic hybrid layer may include an organic-inorganic hybrid material that receives light and generates electrical energy. The organic-inorganic hybrid material may include, but is not particularly limited to, an organic-inorganic perovskite compound, for example, a halide-based organic-inorganic perovskite compound. The organic-inorganic hybrid material may include (0 ≤ x ≤ 3, 0 ≤ y ≤1) one or more of CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 SnI 3 , CH 3 NH 3 SnBr 3 , CH 3 NH 3 SnCl 3 , CH 3 NH 3 PbI (3-x) Cl x , CH 3 NH 3 PbI (3-x) Br x , CH 3 NH 3 PbBr (3-x) Cl x , CH 3 NH 3 Pb (1-y) SnyI 3 , CH 3 NH 3 Pb (1-y) Sn y Br 3 , CH 3 NH 3 Pb (1-y) Sn y Cl 3 , CH 3 NH 3 Pb (1-y) Sn y I (3-x) Cl x , CH 3N H 3 Pb (1-y) Sn y I (3-x) Br x , and CH 3 NH 3 Pb (1-y) Sn y Br (3-x) Cl x , and may include ones using CFH 2 NH 3 , CF 2 HNH 3 , CF 3 NH 3 , or NH 2 CH = NH 2 instead of CH 3 NH 3 in the compound.

[0076] The dye-sensitive layer may include a dye that receives light to generate electrical energy. The dye is not particularly limited, but may include one or more of a ruthenium complex compound, an indoline organic dye, and a natural dye. Examples of the ruthenium complex compound may include one or more of N3 and N719. Examples of the indoline organic dye may include D149. The natural dye may be extracted from fruits or vegetables, and may include, for example, one or more of anthocyanin, chlorophyll, beta-carotene, curcumin, betalain, and rosmarinic acid.

[0077] In one example, the energy conversion layer 130 may include a scintillator that absorbs the energy of radiation generated from the radioactive source 120 and converts the energy of radiation into light energy or electrical energy.

[0078] For example, the energy conversion layer 130 may include a scintillator at least internally. In another example, the energy conversion layer 130 may include a thin film layer including a scintillator provided on at least one surface.

[0079] In one example, the scintillator may include, but is not particularly limited to, one or more of an inorganic compound and an organic compound. Examples of the inorganic compound may include one or more of NaI(Tl), CsI(Tl), GoS, CsI(Tl), CsI(Na), CsI(pure), CsF, KI(Tl), LiI(Eu), BGO, BaF 2 , CaF 2 (Eu), ZnS(Ag), CaWO 4 , CdWO 4 , YAG(Ce) (Y 3 Al 5 O1 2 (Ce)), GSO, LSO, GAGG:Ce, ZnO(Ga), LaCl 3 (Ce), and LaBr 3 (Ce). Examples of the organic compound may include one or more of anthracene, stilbene, naphthalene, and polyethylene naphthalate.

[0080] For example, the energy conversion layer 130 may include an N-type semiconductor 131 and a P-type semiconductor 132. Examples of the N-type semiconductor 131 may be silicon or diamond doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb) that are group 15 elements of the periodic table, or may be a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb) that are group 15 elements of the periodic table. Herein, a compound semiconductor refers to a semiconductor composed of two or more elements, and, examples of a compound semiconductor may include silicon carbide (SiC), silicon oxide (SiO 2 ), aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), and gallium nitride (GaN). Examples of the P-type semiconductor 132 may be silicon or diamond doped with boron (B), aluminum (Al), gallium (Ga), or indium (In) that are group 13 elements of the periodic table, or may be a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In) that are group 13 elements of the periodic table.

[0081] In one example, the N-type semiconductor 131 and the P-type semiconductor 132 may each independently include a metal oxide having a chemical formula of AMO 3 . Here, A may be one selected from La, Ba, Sr, and K, and M may be one selected from Al, In, Ga, Ti, Sn, Hf, Ta, and Zr. In some cases, the N-type semiconductor 131 and the P-type semiconductor 132 may each independently include a plurality of metal oxides of different types. Different types may mean that the elements of A or M are different. In one example, in this case, the N-type semiconductor 131 and the P-type semiconductor 132 may form a homojunction with each other.

[0082] For example, the N-type semiconductor 131 and the P-type semiconductor 132 may each independently include one or more of BaSnO 3 , BaHfO 3 , BaZrO 3 , BaHf 1-x Ti x O 3 (wherein, 0 < x < 1), Ba 1-x La x SnO 3 (wherein 0 < x < 1), Bi 4 Ge 3 O 12 , Al 2 O 3 , Y 2 O 3 , La 2 O 3 , Ga 2 O 3 , Bi 2 O 3 , ZrO 2 , HfO 2 , Ta 2 O 5 , TiO 2 , LaInO 3 , LaGaO 3 , SrZrO 3 , SrHfO 3 , SrTaO 7 , LaIn 1-x Ga x O 3 (wherein, 0 < x < 1), LaGaO 3 , SrTiO 3 , KTaO 3 , HfSiO 4 , Ta 3 Ti 2 O x (wherein, 0 < x < 1), and LaAlO 3 .

[0083] In one example, the electrode 110 and the energy conversion layer 130 may be manufactured through, for example, deposition or epitaxial growth, but are not limited thereto. Here, the deposition may be one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD).

[0084] In the isotope cell 10, in at least some of the plurality of isotope unit cells 100, the energy conversion layer 130 may surround at least a portion of the first electrode 111. In addition, the radioactive source 120 may surround at least a portion of the energy conversion layer 130. In addition, the second electrode 112 may surround at least a portion of the radioactive source 120. Generally, in the gap formed between the first electrode 111 and the second electrode 112, the energy conversion layer 130 may be arranged neighboring to the first electrode, and the radioactive source 120 may be arranged between the energy conversion layer 130 and the second electrode 112. However, it may also be provided that the radioactive source 120 surrounds at least a portion of the first electrode 111, the energy conversion layer 130 surrounds at least a portion of the radioactive source 120, and the second electrode 112 surrounds at least a portion of the energy conversion layer 130.

[0085] Optionally, the energy conversion layer 130 may surround a side surface of the first electrode 111. In addition, the radioactive source 120 may surround the side surface of the energy conversion layer 130. In addition, the second electrode 112 may surround the side surface of the radioactive source 120. Generally, side surfaces of the isotope unit cell 100, the electrode structure 110, the radioactive source 120, or the energy conversion layer 130 may mean their respective outer surfaces, other than the upper or top surface 100US and the lower or bottom surface 100BS arranged at two opposite sides in the first direction D1. As exemplarily shown in FIGS. 1 to 3, the energy conversion layer 130 may surround an outer circumferential surface of the first electrode 111, the radioactive source 120 may surround an outer circumferential surface of the energy conversion layer 130, and the second electrode 112 may surround an outer circumferential surface of the radioactive source 120. In this example, the outer circumferential surfaces of the first electrode 111, the energy conversion layer 130, and the radioactive source 120 are cylindrical surfaces, but the invention is not limited thereto. Further, as already mentioned above, the respective positions of the radioactive source 120 and the energy conversion layer 130 in the radial direction, in-between the first electrode 111 and the second electrode 112, may be interchanged.

[0086] In one example, the energy conversion layer 130 may be in contact with at least a portion of the first electrode 111. Additionally, the radioactive source 120 may be in contact with at least a portion of the energy conversion layer 130. Additionally, the second electrode 112 may be in contact with at least a portion of the radioactive source 120.

[0087] Optionally, the N-type semiconductor 131 may surround at least a portion of the P-type semiconductor 132. In particular, the N-type semiconductor 131 may surround the side surface of the P-type semiconductor 132. As exemplarily shown in FIG. 3, the N-type semiconductor 131 may surround a circumference of the P-type semiconductor 132. In this example, the P-type semiconductor 132 may be arranged adjacent to the first electrode 111. The P-type semiconductor 132 may surround at least a portion of the first electrode 111. In particular, the P-type semiconductor 132 may surround the side surface of the first electrode 111. For example, the P-type semiconductor 132 may surround a circumference of the N-type semiconductor 131. In one example, a surface area of the N-type semiconductor 131 may be larger than that of the P-type semiconductor 132. Meanwhile, the first electrode 111 may be a cathode and the second electrode 112 may be an anode.

[0088] Alternatively, the positions of the N-type semiconductor 131 and the P-type semiconductor 132 may be switched over. In this example, the first electrode 111 may be an anode and the second electrode 112 may be a cathode.

[0089] Optionally, the energy conversion layer 130 may be in contact with at least a portion of the radioactive source 120. For example, by arranging the energy conversion layer 130 and the radioactive source 120 in contact, the radioactive radiation, e.g., beta rays, generated from the radioactive source 120 may easily reach the depletion region of the energy conversion layer 130, which is advantageous for forming the electron-hole pairs.

[0090] As further shown in FIG. 1, the plurality of isotope unit cells 100 may be arranged adjacent to one another in the first direction D1, e.g., along a common cylinder axis.

[0091] As exemplarily shown in FIG. 1, the isotope unit cell 100 optionally may include connector structure 200. The connector structure 200 may be arranged respectively in at least some of the gaps existing between any adjacent isotope unit cells 100A and 100B of a plurality of isotope unit cells 100. The connector structure 200 electrically connect the electrodes 110 of the isotope unit cells 100A and 100B.

[0092] In one example, the connector structure 200 may include a conductive material. In this case, examples of the conductive material may include one or more selected from the group consisting of tin (Sn), indium (In), bismuth (Bi), antimony (Sb), copper (Cu), silver (Ag), zinc (Zn), and lead (Pb). The number, gap, arrangement, and shape of the connector structure 200 are not limited to those illustrated in the figures and may be changed, depending on design. Referring to FIG. 1, the connector structure 200 may have a solder ball or solder bump shape.

[0093] Referring to FIG. 2, in one example, the connector structure 200 may include a first connector 210 electrically connecting first electrodes 111A and 111B of adjacent isotope unit cells 100A and 100B, and a second connector 220 electrically connecting second electrodes 112A and 112B of adjacent isotope unit cells 100A and 100B.

[0094] Adjacent isotope unit cells 100A and 100B may include a first isotope unit cell 100A and a second isotope unit cell 100B. As regards the configurations of each isotope unit cells 100A and 100B, one may refer to the contents described above or to be described below, as long as they are not contradictory. The first isotope unit cell 100A may include an electrode structure 110A including a first electrode 111A and a second electrode 112A, a radioactive source 120A, and an energy conversion layer 130A. The second isotope unit cell 100B may include an electrode structure 110B including a first electrode 111B and a second electrode 112B, a radioactive source 120B, and an energy conversion layer 130B.

[0095] In one example, the first connector 210 may be in contact with the first electrode 111A of the first isotope unit cell 100A and the first electrode 111B of the second isotope unit cell 100B, respectively, to electrically connect the first electrodes 111A, 111B to each other. The second connector 220 may be in contact with each of the second electrode 112A of the first isotope unit cell 100A and the second electrode 112B of the second isotope unit cell 100B so as to electrically connect the second electrodes 112A, 112B to each other.

[0096] Referring to FIG. 1, in one example, the connector structure 200 may be arranged between all adjacent or neighboring ones of the plurality of isotope unit cells 100, and through this, all the first electrodes 111 of each isotope unit cell 100 in the plurality of isotope unit cells 100 may be electrically connected to the first connector 210, and all the second electrodes 112 may be electrically connected to the second connector 220. Through this structure, the isotope unit cells 100 can be effectively connected in parallel, so that high-density energy may be generated.

[0097] Within the isotope cell 10, all isotope unit cells 100 may have identical configurations, e.g., as shown in FIG. 3. Alternatively, it may be possible that the isotope cell 10 includes isotope unit cells 100 of a first type and a second type.

[0098] The isotope unit cells 100 of the first type may be configured such that the P-type semiconductor 132 is arranged between the N-type semiconductor 131 and the first electrode 111, as exemplarily shown in FIG. 3. That is, in the first type isotope unit cell, the first electrode 111 may be a cathode and the second electrode 112 may be an anode.

[0099] The isotope unit cells 100 of the second type may be configured such that the N-type semiconductor 131 is arranged between the P-type semiconductor 132 and the first electrode 111. That is, in the second type isotope unit cell, the first electrode 111 may be an anode and the second electrode 112 may be a cathode.

[0100] Within the isotope cell 10, the first type unit cell and the second type unit cell may be alternately arranged in the stack direction D1. Preferably, in each cell gap, only the first electrodes 111 of adjacent unit cells 110 are connected by a first connector 210 or only the second electrodes 112 of adjacent unit cells 110 are connected by a second connector 220. Thereby, adjacent unit cells of different types may be series connected, thus increasing the overall voltage of the isotope cell 10.

[0101] The isotope cell 10 optionally may include an insulating layer 300 arranged in at least some of the gaps existing between any adjacent isotope unit cells 100A and 100B of the plurality of isotope unit cells 100. In one example, the insulating layer 300 may be arranged between the adjacent isotope unit cells 100 in which the connector structure 200 is arranged. Meanwhile, the insulating layer 300 may prevent a short circuit due to contact between electrodes and may prevent unexpected damage due to transmission of beta rays generated from the radioactive source 120 of one isotope unit cell 100 to another isotope unit cell 100. In that regard, the insulation layer 300 may be made of or may include a material or a combination of materials that shield beta radiation, such as any of the shielding materials disclosed herein or otherwise known in the art. For example, the insulation layer 300 may include a composite, such as a beta radiation shielding material having an outer layer of electrically insulating material surrounding it. Such outer layer may be, for example, positioned above and below the beta radiation shielding material along the first direction D1, as well as being positioned around the connector(s) 200 in the D2-D3 plane (i.e., between each connector 200 and the beta radiation shielding material).

[0102] The insulation layer 300 is not specifically limited as long as it is made of a material with an electrical insulation property For example, the insulation layer 300 may include one or more selected from the group consisting of, for example, a silicate (for example, TEOS), silicon nitride (SiN), hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, and aluminum oxide.

[0103] The connector structure 200 may penetrate through the insulating layer 300. Specifically, the connector structure 200 may include regions exposed from both surfaces of the insulating layer 300 and regions embedded in the insulating layer 300.

[0104] In one example, referring to FIG. 2, a width LT of the isotope unit cell 100 may be larger than a thickness TH of the isotope unit cell 100. Here, the width LT of the isotope unit cell 100 may mean the width in the second direction D2 or the third direction D3, and the thickness TH of the isotope unit cell 100 may mean the width in the first direction D1. Through this, a more compact stacked structure of the isotope unit cell 100 may be formed.

[0105] In one example, the ratio TH / LT of the thickness TH of the isotope unit cell 100 to the width LT of the isotope unit cell 100 may be 0.005 to 0.01, 0.0055 to 0.015, or 0.006 to 0.02. This allows a more compact stacked structure of the isotope unit cell 100 to be formed. In addition, the width LT of the isotope unit cell 100 may be, for example, 1 cm to 50 cm, 5 cm to 30 cm, or 10 cm to 20 cm. In addition, the thickness TH of the isotope unit cell 100 may be, for example, 10 µm to 300 µm, 50 µm to 250 µm, or 100 µm to 200 µm.

[0106] The connector structure 200 may electrically connect the respective electrodes 110A and 110B of the adjacent isotope unit cells 100A and 100B through the regions exposed from both surfaces of the insulating layer 300. Advantageously, the connector structure 200 may stably electrically connect each electrode structure 110 of the adjacent isotope unit cells 100 while being fixed in position by the region embedded in the insulating layer 300.

[0107] FIGS. 4a to 4e are enlarged plan views of portion P of FIG. 3, illustrating the interface between the radioactive source 120 and the energy conversion layer 130. FIGS. 5a to 5e are enlarged plan views of portion Q of FIG. 3, illustrating the interface between the N-type semiconductor and the P-type semiconductor.

[0108] In the isotope unit cell 100, it may be advantageous in terms of high output if the beta rays generated from the radioactive source 120 are incident on the energy conversion layer 130 over the widest possible range, i.e., if the contact area is maximized. For example, as described above, the energy conversion layer 130 and the radioactive source 120 may contact each other in at least some regions to form the interface, and specifically, the radioactive source 120 may form the interface with the N-type semiconductor 131. Since the contact area between the radioactive source 120 and the N-type semiconductor 131 is wide and the surface area increases, the amount of electron-hole pairs formed per unit time increases, which has the effect of improving the efficiency of the isotope cell 10.

[0109] In one example, the radioactive source 120 and the N-type semiconductor 131 may define a boundary that extends perpendicular to the direction in which the radioactive source 120 and the N-type semiconductor 131 are spaced from each other. For example, where the radioactive source 120 and the N-type semiconductor 131 are side-by-side in a transverse plane to the isotope cell 10 (e.g., the D2-D3 plane), the boundary may be flat so as to form a parallel interface (see FIG. 4a). Alternatively, where the radioactive source 120 and the N-type semiconductor 131 are concentric with respect to one another (e.g., in a cylindrical-shaped unit cell 100), the interface may extend at a fixed radius from the central axis of the unit cell 100. In other examples, the radioactive source 120 and the N-type semiconductor 131 may have various types of interfaces to expand the surface area in contact with each other, such as by having portions of the interface extend along a direction in which the radioactive source 120 and the N-type semiconductor 131 are spaced from one another (e.g., along a radial direction in a cylindrical unit cell). For example, the interface may have a uneven shape such as a concave block or box shape like a square or rectangular waveform (see FIG. 4b), a concave triangle shape (see FIG. 4c), a wave shape (see FIG. 4d), a stepped triangular shape (see FIG. 4e), or a sinusoidal shape (not shown), and the uneven shape may form a pattern. However, these are merely examples and the shape of the interface is not particularly limited, as long as it expands the surface area in contact. In particular, the surfaces of the N-type semiconductor 131 and the radioactive source 120 may be formed with protruding and recessing structures configured to engage each other, so that the N-type semiconductor 131 and the radioactive source 120 form a corrugated interface.

[0110] Referring to FIGS. 4b to 4e, in the direction in which the radioactive source 120 and the N-type semiconductor 131 are spaced apart, the distance between the low point and the high point of the uneven shape of the interface may be referred to as a first height h 1 . In one example, that spacing direction of the radioactive source 120 and the N-type semiconductor 131 may be the second direction D2 or the third direction D3. In FIGS. 4b to 4e, that spacing direction of the radioactive source 120 and the N-type semiconductor 131 may mean the third direction D3. In one example, the first height h 1 may be, but is not limited to, 0.01% to 90%, 0.01% to 80%, 0.01% to 70%, 0.01% to 60%, or 0.01% to 50% of the width of the radioactive source 120 or the N-type semiconductor 131. Here, the width of the radioactive source 120 or the N-type semiconductor 131 may mean, for example, the overall width of those components in the second direction D2 or the third direction D3 as illustrated in the arrangement of FIG. 3.

[0111] With reference to FIGS. 4b to 4e, in the direction (for example, the second direction D2) perpendicular to the first height h 1 direction of the uneven shape (for example, the third direction D3), the uneven shape may have a pattern having a first width d 1 . The first width d1 may be, but is not limited to, 10 -5< % to 30%, 10 -4< % to 30%, 10 -3< % to 30%, or 10 -2< % to 30% of the width of the radioactive source 120 or the N-type semiconductor 131.

[0112] In one example, the ratio S B / S A of a second area S B (which is defined as the surface area of the interface between the radioactive source 120 and the N-type semiconductor 131 having an uneven shape, such as shown in FIGS. 4B to 4E) compared to a first area S A (which is defined as the surface area of the interface without an uneven shape, such as shown in FIG. 4A) may be, but is not limited to, 1.1 to 4, 1.1 to 3.5, 1.1 to 3, or 1.1 to 2.5. By increasing that surface area at the interface, the amount of electron-hole pairs formed per unit time will increase, which will have the effect of improving the efficiency of the isotope cell 10.

[0113] In the isotope unit cell 100, the N-type semiconductor 131 and the P-type semiconductor 132 of the energy conversion layer 130 may be in contact with each other so as to form an interface. In addition, if the contact area between the N-type semiconductor 131 and the P-type semiconductor 132 is increased, the number of electron-hole pairs generated per unit time will correspondingly increase, thereby improving the efficiency of the isotope cell 10.

[0114] In one example, the N-type semiconductor 131 and the P-type semiconductor 132 may define a boundary that extends perpendicular to the direction in which the N-type semiconductor 131 and the P-type semiconductor 132 are spaced from each other. For example, where the N-type semiconductor 131 and the P-type semiconductor 132 are side-by-side in a transverse plane to the isotope cell 10 (e.g., the D2-D3 plane), the boundary may be flat so as to form a parallel interface (see FIG. 5a). Alternatively, where the N-type semiconductor 131 and the P-type semiconductor 132 are concentric with respect to one another (e.g., in a cylindrical-shaped unit cell 100), the interface may extend at a fixed radius from the central axis of the unit cell 100. In other examples, the N-type semiconductor 131 and the P-type semiconductor 132 may have various types of interfaces to expand the surface area in contact with each other, such as by having portions of the interface extend along a direction in which the N-type semiconductor 131 and the P-type semiconductor 132 are spaced from one another (e.g., along a radial direction in a cylindrical unit cell). For example, the interface may have a uneven shape such as a concave block or box shape like a square or rectangular waveform (see FIG. 5b), a concave triangle shape (see FIG. 5c), a wave shape (see FIG. 5d), a stepped triangular shape (see FIG. 5e), or a sinusoidal shape (not shown), and the uneven shape may form a pattern. However, these are merely examples and the shape of the interface is not particularly limited, as long as it expands the surface area in contact.

[0115] Referring to FIGS. 5b to 5e, in the direction in which the N-type semiconductor 131 and the P-type semiconductor 132 are spaced apart, the distance between the low point and the high point of the uneven shape of the interface may be referred to as the second height h2. In one example, that spacing direction of the N-type semiconductor 131 and the P-type semiconductor 132 may be the second direction D2 or the third direction D3. In FIGS. 5b to 5e, that spacing direction of the N-type semiconductor 131 and the P-type semiconductor 132 may mean the third direction D3. In one example, the second height h2 may be, but is not limited to, 0.01% to 90%, 0.01% to 80%, 0.01% to 70%, 0.01% to 60%, or 0.01% to 50% of the width of the N-type semiconductor 131 or the P-type semiconductor 132. Here, the width of the N-type semiconductor 131 or the P-type semiconductor 132 may mean, for example, the overall width of those components in the second direction D2 or the third direction D3 as illustrated in the arrangement of FIG. 3.

[0116] Referring to FIGS. 5b to 5e, in the direction (for example, the second direction D2) perpendicular to the second height h2 direction of the uneven shape (for example, the third direction D3), the uneven shape may have a pattern having a second width d2. The second width d2 may be, but is not limited to, 10 -5< % to 30%, 10 -4< % to 30%, 10 -3< % to 30%, or 10 -2< % to 30% of the width of the N-type semiconductor 131 or the P-type semiconductor 132.

[0117] In one example, the ratio S D / S C of a fourth area S D (defined as the surface area of the interface between the N-type semiconductor 131 and the P-type semiconductor 132 having an uneven shape, such as shown in FIGS. 5b to 5e) to a third area S C (defined as the surface area of the interface without an uneven shape, such as shown in FIG. 5a) may be, but is not limited to, 1.1 to 4, 1.1 to 3.5, 1.1 to 3, or 1.1 to 2.5. By increasing that surface area at the interface, the amount of electron-hole pairs formed per unit time will increase, which will have the effect of improving the efficiency of the isotope cell 10.In the isotope unit cell 100, the energy conversion layer 130 may include an intrinsic semiconductor (not illustrated) between the N-type semiconductor 131 and the P-type semiconductor 132. The intrinsic semiconductor is a semiconductor without any significant dopant species present. The intrinsic semiconductor may be arranged between the N-type semiconductor 131 and the P-type semiconductor 132 to further expand the depletion region. In addition, the intrinsic semiconductor may be in contact with the N-type semiconductor 131 and the P-type semiconductor 132, and the interface between the intrinsic semiconductor and the N-type semiconductor 131 and the interface between the intrinsic semiconductor and the P-type semiconductor 132 may be formed so that they may be in contact over a wide range as described above.

[0118] In one example, the uneven shape formed at the interface between the radioactive source 120 and the N-type semiconductor 131 and the interface between the N-type semiconductor 131 and the P-type semiconductor 132 may be implemented by a method of forming a microstructure using a printing process such as CLICHE, an etching process such as wet etching or dry etching, or a lithography method. The CLICHE may be a metal plate having an uneven surface. Specifically, for example, when the first height h 1 , the first width d 1 , the second height h 2 , and the second width d 2 are 1 µm or more and less than 1,000 µm, the uneven shape may be manufactured by wet etching. In addition, specifically, for example, when the first height h 1 , the first width d 1 , the second height h 2 , and the second width d 2 are 1 nm or more and less than 1,000 nm, the uneven shape may be manufactured by the dry etching.

[0119] FIG. 6 is a plan view illustrating a further example of an isotope unit cell 100. FIG. 7 is a plan view illustrating at least a portion of a still further example of isotope unit cell 100. The isotope unit cells 100 shown in FIGS. 6 and 7 have similar configurations as the ones described above with reference to FIGS. 1 to 5. Therefore, to avoid unnecessary repetition, the following description focuses on the differences. It should be noted that all features and advantages disclosed in connection with FIGS. 1 to 5 are also applicable to the following examples.

[0120] In one example, the isotope unit cell 100 may include a hole transport layer (HTL) 140 between the first electrode 111 and the P-type semiconductor 132. In addition, in one example, the isotope unit cell 100 may include an electron transport layer (ETL) 150 between the second electrode 112 and the radioactive source 120. Meanwhile, although not illustrated in the drawing, the isotope unit cell 100 may include an electron transport layer 150 while not including the hole transport layer 140. The hole transport layer 140 or the electron transport layer 150 may assist in the transport of holes or electrons. Meanwhile, the first electrode 111 may be a cathode and the second electrode 112 may be an anode.

[0121] In one example, the hole transport layer 140 may include a material used in a hole transport layer in the field of perovskite solar cells or organic light emitting diodes (OLEDs). For example, the HTL 140 may include PEDOT:PSS (poly(3,4-ethylenedioxythiophene), NiO x (wherein x is greater than 0 and less than 1 or greater than 0 and less than 0.3), PTAA (poly(triarylamine)), N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB or NPD), 4,4',4"-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), TPD (N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine), Spiro-OMeTAD (2,2',7,7'-Tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene), or similar.

[0122] In one example, the electron transport layer 150 may include a material used in an electron transport layer in the field of perovskite solar cells or organic light emitting diodes (OLEDs). The ETL 150 may, for example, include titanium dioxide, tin oxide, zinc oxide, fullerene and its derivatives (e.g., PCBM), Alq 3 (Tris(8-hydroxyquinolinato)aluminum), BPhen (4,7-Diphenyl-1,10-phenanthroline), TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)), TmPyPB (1,3,5-Tri(m-pyrid-3-yl-phenyl)benzene), or similar.

[0123] FIG. 8 is a plan view illustrating a further example of an isotope unit cell 100. The isotope unit cell 100 shown in FIG. 8 has a similar configuration as the ones described above with reference to FIGS. 1 to 7. Therefore, to avoid unnecessary repetition, the following description focuses on the differences. It should be noted that all features and advantages disclosed in connection with FIGS. 1 to 7 are also applicable to the following examples.

[0124] As exemplarily shown in FIG. 8, the isotope unit cell 100 may include a dielectric layer 115 that surrounds at least a portion of the first electrode 111. The dielectric layer 115 positioned on one side of the first electrode 111 in the direction(s) in which the first electrode 111 is spaced from the other components of the unit cell 100. For example, the dielectric layer 115 may be positioned concentrically inside of the first electrode 111 within the transverse plane (or D2-D3 plane), as shown in FIG. 8.

[0125] For example, the dielectric layer 115 may include a dielectric material. In one example, the dielectric material is not specifically limited as long as it is used in the field. The dielectric layer 115 may optimize the arrangement of the radioactive source 120 and may further improve electrical stability by minimizing occurrence of leakage current. As exemplarily shown in FIG. 8, if a HTL 140 is provided, the dielectric layer 115 may be arranged between the HTL 140 and the first electrode 111.

[0126] The dielectric layer 115, for example, may include a low-k dielectric with a dielectric constant of less than 3.9. The low-k dielectric is not specifically limited as long as it is used in the field, but may include one or more from the group consisting of Fluorinated TetraEthylOrthoSilicate (FTEOS), Hydrogen SilsesQuioxane (HSQ), Bis-benzoCycloButene (BCB), TetraMethylOrthoSilicate (TMOS), OctaMethyleyCloTetraSiloxane (OMCTS), HexaMethylDiSiloxane (HMDS), TriMethylSilyl Borate (TMSB), DiAcetoxyDitertiaryButoSiloxane (DADBS), TriMethylSilil Phosphate (TMSP), PolyTetraFluoroEthylene (PTFE), Tonen SilaZen (TOSZ), Fluoride Silicate Glass (FSG), polyimide nanofoams such as polypropylene oxide, Carbon Doped silicon Oxide (CDO), Organo Silicate Glass (OSG), SiLK, Amorphous Fluorinated Carbon, silica aerogels, silica xerogels, and mesoporous silica. When the dielectric layer 115 includes a low-k dielectric, it is possible to minimize occurrence of leakage current and, for example, it is possible to enable the radiation generated from the radioactive source 120 to be efficiently transmitted to the energy conversion layer 130.

[0127] Alternatively, the dielectric layer 115 may, for example, include a high-k dielectric with a dielectric constant of 3.9 or higher. The high-k dielectric is not particularly limited as long as it is used in the art, but examples of the high-k dielectric may include, but is not limited to, one or more from the group consisting of boron nitride, hafnium oxide, hafnium silicon oxide, hafnium aluminum oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate. When the dielectric layer 115 includes a high-k dielectric, it is possible to minimize occurrence of leakage current and design the isotope cell 10 with a high integration density.

[0128] FIG. 9 is a plan view illustrating a further example isotope unit cell 100. FIG. 10 is a perspective view illustrating a portion of adjacent isotope unit cells 100A and 100B in the isotope cell 10. The isotope unit cells 100 shown in FIGS. 9 and 10 have a similar configuration as the ones described above with reference to FIGS. 1 to 8. Therefore, to avoid unnecessary repetition, the following description focuses on the differences. It should be noted that all features and advantages disclosed in connection with FIGS. 1 to 8 are also applicable to the following examples.

[0129] In the isotope unit cell 100 exemplarily shown in FIG. 9, at least one of the first electrode 111 and the second electrode 112 may include a through hole 111H and 112H. The through hole 111H, 112H extends along the first direction D1 that is perpendicular to the upper surface 110US of the electrode structure 110. In other words, the through hole 111H, 112H may extend in a direction perpendicular to the spacing direction in which the first electrode 111 and the second electrode 112 are spaced apart from each other. For example, the through hole 111H, 112H may extend between the upper and lower surface of the respective electrode 111, 112. The first electrode 111 may include the through hole 111H that extends along the first direction D1 that is perpendicular to the upper surface 110US of the electrode structure 110. The through hole 111H of the first electrode 111 may also be referred to as the first through hole 111H in the following. The second electrode 112 may include the through hole 112H that extends along the first direction D1 that is perpendicular to the upper surface 110US of the electrode structure 110. The through hole 112H of the second electrode 111 may also be referred to as the second through hole 112H in the following. The through holes 111H and 112H, preferably, may be formed in both the first electrode 111 and the second electrode 112. However, it may also be possible that only the first electrode 111 or the second electrode 112 has a through hole.

[0130] In one example, the through holes 111H and 112H may be manufactured by, for example, but not limited to, a physical method (such as boring a hole using a drill-like tool), wet etching, dry etching, or a photolithography process.

[0131] The optional connector structure 200 may include a region that is arranged in at least a portion of the through hole 111H, 112H. That is, at least a portion of the connector structure 200 may be arranged in the through holes 111H and 112H. In one example, the connector 200 disposed in at least a portion of the through holes 111H and 112H may be manufactured by applying a paste containing a conductive material or by a printing method. Meanwhile, the connector structure 200 may include a region that is not arranged in at least a portion of the through hole 111H, 112H, which may be embedded in the insulating layer 300. As exemplarily shown in Fig. 10, the first connector 210 may be pin-shaped and extend within the first hole 111HA of a first electrode 111A of one isotope unit cell 110A, within the first hole 111HB of a first electrode 111B of another isotope unit cell 110B arranged adjacent to the isotope unit cell 110A, and through the cell gap. Similar, the second connector 220 may be pin-shaped and extend within the second hole 112HA of a second electrode 112A of one isotope unit cell 110A as well as within the second hole 112HB of a second electrode 112B of said another isotope unit cell 110B arranged adjacent to the isotope unit cell 110A, and through the cell gap.

[0132] For example, the first connector 210 may include a region arranged in at least a portion of the first through hole 111H formed in the first electrode 111. The second connector 220 may include a region arranged in at least a portion of the second through hole 112H formed in the second electrode 112.

[0133] In one example, a through hole 111HA may be formed in the first electrode 111A of the first isotope unit cell 100A, and a through hole 112HA may also be formed in the second electrode 112A. In addition, a through hole 111HB may be formed in the first electrode 111B of the second isotope unit cell 100B, and a through hole 112HB may also be formed in the second electrode 112B.

[0134] In one example, the first connector 210 may include a region arranged in at least a portion of each of the through hole 111HA formed in the first electrode 111A and the through hole 111HB formed in the first electrode 111B. The second connector 220 may include a region arranged in at least a portion of each of the through hole 112HA formed in the second electrode 112A and the through hole 112HB formed in the second electrode 112B.

[0135] FIG. 11 is a plan view illustrating a portion of another example of an isotope unit cell 100. FIG. 12 is a perspective view illustrating the isotope unit cell 100 of FIG. 11. The isotope unit cell 100 of FIGS. 11 and 12 differ from the previously described isotope unit cells in the shape of the radioactive source 120. Therefore, descriptions regarding other configurations may refer to the aforementioned contents unless they are contradictory. The features and advantages of the previously described isotope unit cells, therefore, are also applicable to the following examples.

[0136] As exemplarily shown in FIG. 11, the isotope unit cell 100 may include the electrode structure 110 including the first electrode 111 and the second electrode 112. In addition, the isotope unit cell 100 may include the energy conversion layer 130 arranged between the first electrode 111 and the second electrode 112. In addition, the isotope unit cell 100 may include the radioactive source 120 arranged on at least one of the first electrode 111 and the second electrode 112.

[0137] Referring to FIG. 11, the radioactive source 120 may be disposed on the second electrode 112. Although not illustrated in the drawings, the radioactive source 120 may be disposed on the first electrode 111 instead of the second electrode 112. As will be described later, referring to FIG. 16, the radioactive source 120 may be disposed independently on the first electrode 111 and the second electrode 112, respectively.

[0138] In one example, in at least some of the plurality of isotope unit cells 100, the radioactive source 120 does not penetrate through the first electrode 111 or the second electrode 112 along the transverse plane in which the first and second electrodes 111, 112 are spaced apart from one another (i.e., along the D2-D3 plane in the arrangement of FIG. 11). That is, the radioactive source 120 may be embedded into the first electrode 111 or the second electrode 112 along a first direction in which the first and second electrodes 111, 112 are spaced apart from one another, and the radioactive source 120 may be provided as discrete portions spaced apart from one another along a second direction transverse to the first direction. For example, in a cylindrical-shaped isotope unit cell 100 as depicted in FIG. 11, where the first and second electrodes 111, 112 are spaced apart from one another in a radial direction, the discrete portions of the radioactive source 120 may be spaced apart from one another along a circumferential direction while penetrating partially into the electrode 112 along the radial direction.

[0139] In one example, the radioactive source 120 may not extend entirely from the upper surface 110US till the lower surface 110BS of the electrode structure 110. Rather, the radioactive source 120 may be embedded in either the first electrode 111 or the second electrode 112, only being exposed to a limited number of surfaces of the isotope unit cell 100, for example, one surface, viz. upper surface 110US as shown in FIG. 12.

[0140] As exemplarily and schematically shown in FIG. 11, the energy conversion layer 130 may be in contact with at least a portion of the radioactive source 120, at least a portion of the first electrode 111, and at least a portion of the second electrode 112. In this way, electrons formed in the energy conversion layer 130 may move directly to the second electrode 112 from the energy conversion layer 130, and specifically from the N-type semiconductor 131, without having to pass through the radioactive source 120.

[0141] In one example, the first electrode 111 may be the cathode and the second electrode 112 may be the anode. Here, the radioactive source 120 may be arranged being embedded in the second electrode 112. In this way, the radioactive source 120 may be provide efficient radiation to the energy conversion layer 130.

[0142] The energy conversion layer 130 may include the N-type semiconductor 131 and the P-type semiconductor 132 as described above. Here, the N-type semiconductor 131 may surround at least a portion of the P-type semiconductor 132. In addition, the P-type semiconductor 132 may surround at least a portion of the first electrode 111. Here, the first electrode 111 may be the cathode and the second electrode 112 may be the anode. In addition, the radioactive source 120 may be arranged on the second electrode 112, being embedded in the second electrode 112. That is, the radioactive source 120 may not extend entirely from the upper surface 110US till the lower surface 110BS of the electrode structure 110.

[0143] In one example, in at least some of the plurality of isotope unit cells 100, the radioactive source 120 may include an extended shape ES that extends in a direction away from the energy conversion layer 130 when viewed in a first direction D1 perpendicular to the upper surface 110US of the electrode. Here, the direction away from the energy conversion layer 130 may include both a radiation direction toward the outside of the isotope cell 10 and a radiation direction toward the center of the isotope cell 10 with respect to the energy conversion layer 130 as reference, as illustrated in FIG. 11.

[0144] In one example, the extended shapes ES may be plural. The plurality of extended shapes ES may not overlap each other when viewed in the first direction D1. This structure may minimize the amount of isotopes included in the radioactive source 120.

[0145] In one example, the plurality of extended shapes ES may have a specific arrangement. For example, the plurality of extended shapes ES may be arranged so that the distance from the center of the isotope cell 10 is substantially the same. In addition, for example, the plurality of extended shapes ES may be arranged so as to have a symmetrical structure based on a specific axis passing through the center of the isotope cell 10 when viewed in the first direction D1. However, this is only an example and is not particularly limited thereto.

[0146] In one example, the shape of the extended shape ES is not particularly limited, but the width of the extended shape ES may decrease as it moves away from the energy conversion layer 130. Referring to FIG. 11, the width of the extended shape ES may gradually decrease as it moves away from the energy conversion layer 130. In addition, at least a portion of the end of the extended shape ES may be round, but is not particularly limited thereto. FIG. 13 schematically and exemplarily illustrates a structure of a power device 1.

[0147] The isotope cell 10 may include a shielding member 15 that houses the plurality of isotope unit cells 100 and the connector structure 200. The shielding member 15 may include a metal material.

[0148] The shielding member 15 may include a material capable of shielding or reflecting radiation, such as the radiation emitted by the radioactive source 120 (e.g., alpha, beta, and / or gamma rays). For example, the shielding member 15 may include one or more of a metal material such as copper, silver, and aluminum, and a polymer material such as polyolefin, polyester, and poly(meta)acrylate. The polyolefin may include one or more of, but is not particularly limited to, polyethylene, polypropylene, and an ethylene-propylene copolymer. The polyester may include, but is not particularly limited to, polyethylene terephthalate. The poly(meth)acrylate may include, but is not particularly limited to, an ethylene-(meta)acrylate copolymer. The shielding member 15 may include one or more of lead (Pb) and concrete, for example, if the radioactive source 120 contains an isotope that emits gamma rays.

[0149] The shielding member 15 may minimize electromagnetic interference, occurrence of a parasitic circuit, or power loss that is caused by driving the plurality of radioactive unit cells 100 and the connector 200.

[0150] Optionally, the power device 1 according to an example embodiment of the present invention may include a load 30 electrically connected to the isotope cell 10 through a wire line 20. Meanwhile, the wire line 20 may include a first wire line 21 electrically connected to the first connector 210 and a second wire line 22 electrically connected to the second connector 220.

[0151] For example, the first wire line 21 may be electrically connected to the load 30 arranged outside the isotope cell 10 by passing through the shielding member 15. In addition, the second wire line 22 may be electrically connected to the load 30 arranged outside the isotope cell 10 by passing through the shielding member 15.

[0152] Optionally, the power device 1 may include an energy storage device 40 electrically connected to the isotope cell 10 via the wire line, also referred to as wiring 20. The energy storage device 40 is not particularly limited as long as it may store power, and may be, for example, a capacitor, a standby power device for an uninterruptible power supply system.

[0153] In one example, the power device 1 may include a switching device 50 that is configured to connect the wire line 20 to either the load 30 or the energy storage device 40. The switching device 50 may connect the wire line 20 to either the load 30 or to the energy storage device 40 according to an electrical signal. In one example, the switching device 50 may be a component device including a metal-oxide-semiconductor field effect transistor (MOSFET) structure. However, the invention is not limited to a MOSFET but may also be realized by another electric or electronic element that is configured to be switched between a first state, in which it electrically connects the isotope cell 10 with the load, and a second state, in which it electrically connects the isotope cell 10 with the energy storage device 40. In the second state, the switching device 50, preferably, disconnects the load 30 from the isotope cell 10.

[0154] Thus, optionally, when the wire line 20 is connected to the load 30 through the switching device 50, the electrical connection between the isotope cell 10 and the energy storage device 40 may be blocked. Also, when the wire line 20 is connected to the energy storage device 40 through the switching device 50, the electrical connection between the isotope cell 10 and the load 30 may be blocked. As a result, it is possible to control the flow of power of the isotope cell 10 that continuously generates power.

[0155] FIGS. 14 to 16 are plan views illustrating at least a portion of the isotope unit cell 100 according to one embodiment of the present application. The description of FIGS. 14 to 16 may refer to the description of FIGS. 1 to 13 unless they are contradictory.

[0156] Referring to FIG. 14, in the isotope cell 10 according to an embodiment of the present application, in at least some of the plurality of isotope unit cells 100, the radioactive source 120 surrounds at least a portion of the first electrode 111. In addition, the energy conversion layer 130 may surround at least a portion of the radioactive source 120. In addition, the second electrode 112 may surround at least a portion of the energy conversion layer 130. This structure (in which the volume of the energy conversion layer 130 is smaller than that positioned at a larger radial distance, such as in FIG. 3) may be advantageous in minimizing the amount of isotopes included in the radioactive source 120 and maximizing the efficiency of the isotope cell 10.

[0157] In one example, the radioactive source 120 may surround a side surface of the first electrode 111. In addition, the energy conversion layer 130 may surround a side surface of the radioactive source 120. In addition, the second electrode 112 may surround a side surface of the energy conversion layer 130.

[0158] In one example, the radioactive source 120 may contact at least a portion of the first electrode 111. In addition, the energy conversion layer 130 may contact at least a portion of the radioactive source 120. In addition, the second electrode 112 may contact at least a portion of the energy conversion layer 130.

[0159] Referring to FIG. 15, in an isotope cell 10 according to one embodiment of the present application, in at least some of the plurality of isotope unit cells 100, the energy conversion layer 130 includes a first energy conversion layer 130-1 and a second energy conversion layer 130-2. In one example, the radioactive source 120 may surround at least a portion of the first energy conversion layer 130-1. In addition, the second energy conversion layer 130-2 may surround at least a portion of the radioactive source 120. In addition, the first energy conversion layer 130-1 may surround at least a portion of the first electrode 111. In addition, the second electrode 112 may surround at least a portion of the second energy conversion layer 130-2.

[0160] In one example, the radioactive source 120 may surround a side surface of the first energy conversion layer 130-1. In addition, the second energy conversion layer 130-2 may surround the side of the radioactive source 120. In addition, the first energy conversion layer 130-1 may surround the side of the first electrode 111. In addition, the second electrode 112 may surround the side of the second energy conversion layer 130-2. This structure may increase the surface area of the interface between the radioactive source 120 and the energy conversion layer 130 and the interface within the energy conversion layer 130, thereby increasing the amount of electron-hole pairs formed per unit time.

[0161] In one example, the radioactive source 120 may be in contact with at least a portion of the first energy conversion layer 130-1. In addition, the second energy conversion layer 130-2 may be in contact with at least a portion of the radioactive source 120. In addition, the first energy conversion layer 130-1 may be in contact with at least a portion of the first electrode 111e. In addition, the second electrode 112 may be in contact with at least a portion of the second energy conversion layer 130-2.

[0162] In one example, the first energy conversion layer 130-1 may include a first N-type semiconductor 131-1 and a first P-type semiconductor 132-1. The second energy conversion layer 130-2 may include a second N-type semiconductor 131-2 and a second P-type semiconductor 132-2. The first N-type semiconductor 131-1 and the second N-type semiconductor 131-2 may refer to the description of the N-type semiconductor 131 described above, and the first P-type semiconductor 132-1 and the second P-type semiconductor 132-2 may refer to the description of the P-type semiconductor 132 described above.

[0163] Referring to FIGe16, in the isotope cell 10 according to an embodiment of the present application, in at least some of the plurality of isotope unit cells 100, the radioactive soruce 120 includes a first radioactive source 120-1 that is arranged on a first electrode 111 and a second radioactive source 120-2 that is arranged on a second electrode 112.

[0164] In one example, the first radioactive source 120-1 may have a first extended shape ES-1 extending away from the energy conversion layer 130 when viewed in a first direction D1 perpendicular to the upper surface 110US of the electrode. The second radioactive source 120-2 may have a second extended shape ES-2 extending away from the energy conversion layer 130 when viewed in a first direction D1 perpendicular to the upper surface 110US of the electrode. Here, the direction away from the energy conversion layer 130 may include both the radiation direction toward the outside of the isotope cell 10 and the radiation direction toward the center of the isotope cell 10 based on the energy conversion layer 130 as shown in FIG. 16.

[0165] In one example, the first extended shape ES-1 may extend in a direction toward the center of the isotope cell 10. The second extended shape ES-2 may extend in a direction toward the outside of the isotope cell 10.

[0166] In one example, the first radioactive source 120-1 may be located at different angular positions about the central axis than the second radioactive source 120-2, such that a respective radius passing through each of the discrete locations of the first radioactive source 120-1 does not pass through any of the discrete locations of the second radioactive source 120-2, but rather may be arranged at an angular midpoint between respective adjacent second radioactive sources 120-2, as shown in FIG. 16. In this way, the radioactive source 120 may be efficiently arranged in space to minimize the amount of isotopes included in the radioactive source 120 while minimizing any shadow area where the radiation does not reach the interface within the energy conversion layer 130, thereby improving the efficiency of the isotope cell 10.

[0167] In one example, the first extended shape ES-1 and the second extended shape ES-2 may each independently be a plurality. The plurality of first extended shapes ES-1 may be non-overlapping with each other when viewed from the first direction D1. The plurality of second extended shapes ES-2 may be non-overlapping with each other when viewed from the first direction D1. This structure may minimize the amount of isotopes included in the radioactive source 120.

[0168] In one example, the first extended shape ES-1 and the second extended shape ES-2 may each independently have a specific arrangement. A specific arrangement may refer to, for example, the contents of the extended shape ES described in FIG. 11. In one example, the first extended shape ES-1 and the second extended shape ES-2 may each independently have a width that decreases as they extend away from the energy conversion layer 130. In addition, the first extended shape ES-1 and the second extended shape ES-2 may each independently have at least a portion of an end that is rounded, but is not limited thereto.

[0169] While various example embodiments of the present invention have been illustrated and described above, it will be apparent to those skilled in the art that modifications and variations could be made without departing from the scope of the present invention as defined by the appended claims. In addition, the example embodiments may be implemented by deleting some components from the above-described example embodiments, and each embodiment may be implemented in combination with each other.

Claims

1. An isotope cell (10), comprising: a plurality of isotope unit cells (100) arranged above one another in a stack direction (D1) with a cell gap formed between adjacent isotope unit cells (100), each isotope unit cell (100) including: an electrode structure (110) including a first electrode (111) and a second electrode (112), a radioactive source (120) arranged between the first electrode (111) and the second electrode (112), and an energy conversion layer (130) arranged between the first electrode (111) and the second electrode (112); and a connector structure (200) that is arranged in at least some of the cell gaps and electrically connects the electrode structures (110) of the adjacent isotope unit cells (100).

2. The isotope cell (10) of claim 1, wherein the connector structure (200) includes a first connector (210) and a second connector (220), wherein within each cell gap, a first connector (210) electrically connects first electrodes (111) of adjacent isotope unit cells (100) and / or a second connector (220) electrically connects second electrodes (112) of adjacent isotope unit cells (100).

3. The isotope cell (10) of claim 1 or 2, further comprising: an insulating layer (300) that is arranged in at least some of the cell gaps, wherein the connector structure (200) runs through the insulating layer (300), electrically connecting the adjacent isotope unit cells (100).

4. The isotope cell (10) of any one of the preceding claims, wherein the first electrode (111) and the second electrode (112) are spaced apart from each other in a spacing direction (D3) which is perpendicular to the stack direction (D1), so that an electrode gap is formed therebetween, and wherein the energy conversion layer (130) is arranged in the electrode gap, with respect to the spacing direction (D3), between the first electrode (111) and the radioactive source (120) or between the second electrode (112) and the radioactive source (120).

5. The isotope cell (10) of claim 4, wherein the energy conversion layer (130) includes an N-type semiconductor (131) and a P-type semiconductor (132), wherein the N-type semiconductor is arranged, with respect to the spacing direction (D3), in the electrode gap between the P-type semiconductor (132) and the radioactive source (120), and the P-type semiconductor is arranged, with respect to the spacing direction (D3), in the electrode gap between the N-type semiconductor and the first electrode (111).

6. The isotope cell (10) of claim 5, wherein the isotope unit cell (100) further includes a hole transport layer (140) which is arranged, with respect to the spacing direction (D3), in the electrode gap between the first electrode (111) and the P-type semiconductor (132).

7. The isotope cell (10) of any one of the preceding claims, wherein in at least some of the plurality of isotope unit cells (100), the energy conversion layer (130) surrounds at least a portion of the first electrode (111), the radioactive source (120) surrounds at least a portion of the energy conversion layer (130), and the second electrode (112) surrounds at least a portion of the radioactive source (120), or the radioactive source (120) surrounds at least a portion of the first electrode (111), the energy conversion layer (130) surrounds at least a portion of the radioactive source (120), and the second electrode (112) surrounds at least a portion of the energy conversion layer (130).

8. The isotope cell (10) of claim 7, insofar as being dependent upon claim 5, wherein the N-type semiconductor surrounds at least a portion of the P-type semiconductor (132), and the P-type semiconductor surrounds at least a portion of the first electrode (111).

9. The isotope cell (10) of any one of the preceding claims, wherein the energy conversion layer (130) contacts at least a portion of the radioactive source (120).

10. The isotope cell (10) of any one of the preceding claims, wherein at least one of the first electrode (111) and the second electrode (112) includes a through hole (111H, 112H) extending through the entire length of the respective electrode (111, 112) in the stack direction (D1), and the connector structure (200) includes a section arranged in at least a portion of the through hole (111H, 112H).

11. The isotope cell (10) of any one of the preceding claims, wherein at least some of the plurality of isotope unit cells (100) further include a dielectric layer (115) that surrounds at least a portion of the first electrode (111).

12. The isotope cell (10) of any one of the preceding claims, further comprising: a shielding member (15) that houses the plurality of isotope unit cells (100) and the connector (200).

13. The isotope cell (10) of any one of the preceding claims, wherein the energy conversion layer (130) does not overlap the radioactive source (120) when viewed in the stack direction (D1).

14. The isotope cell (10) of any one of the preceding claims, wherein the radioactive source (120) is embedded either in the first electrode (111) or the second electrode (112), being exposed outwardly along the stack direction (D1) through only one side.

15. The isotope cell (10) of any one of the preceding claims, wherein the energy conversion layer (130) contacts at least a portion of the radioactive source (120), at least a portion of the first electrode (111), and at least a portion of the second electrode (112).

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