Isotope battery unit and isotope battery module including same

Abstract

Provided is an isotope battery unit comprising: a first isotope battery layer including two or more first radiation sources extending in a first direction; and a second isotope battery layer including two or more second radiation sources extending in a second direction different from the first direction, wherein the first isotope battery layer includes: the first radiation sources; a first conductive semiconductor layer partially surrounding the first radiation sources such that one surface of each first radiation source is exposed; and a second conductive semiconductor layer spaced apart from the first radiation sources with the first conductive semiconductor layer interposed therebetween, the second conductive semiconductor layer having first trenches on a surface spaced apart from the first conductive semiconductor layer, wherein the first radiation sources and the second radiation sources intersect and are in contact with each other.

Description

Isotope battery unit and isotope battery module including the same

[0001] The present invention relates to an isotope battery unit and an isotope battery module including the same, and more specifically, to an isotope battery unit and an isotope battery module including the same having excellent heat dissipation and cooling performance.

[0002] The present application claims the benefit of priority based on Korean Patent Application No. 10-2024-0148600 dated October 28, 2024 and Korean Patent Application No. 10-2025-0156754 dated October 27, 2025, and all contents disclosed in the documents of said Korean patent applications are incorporated herein as part of the specification.

[0003] Radiation emitted by a radioactive isotope can be absorbed through the surface of a pn junction semiconductor and converted into electrical energy. Electron-hole pairs are generated in the space charge region within the pn junction semiconductor by the radiation, and the carriers generated at this time exhibit voltage-current characteristics. An isotope battery unit utilizing these properties has the advantage of being able to stably supply power for a long period, but improvements are required in terms of safety, efficiency, and stability.

[0004] The first technical objective of the present invention is to provide an isotope battery unit with excellent heat dissipation and cooling performance.

[0005] The first technical objective of the present invention is to provide an isotope battery module with excellent heat dissipation and cooling performance.

[0006] To achieve the first technical objective, the present invention provides an isotope battery unit comprising: a first isotope battery layer comprising two or more first radiation sources extending in a first direction and a second isotope battery layer comprising two or more second radiation sources extending in a second direction different from the first direction, wherein the first isotope battery layer comprises: the first radiation sources; a first conductive semiconductor layer partially surrounding the first radiation sources such that one surface of the first radiation sources is exposed; and a second conductive semiconductor layer provided spaced apart from the first radiation sources with the first conductive semiconductor layer in between, and having first trenches on the surface spaced apart from the first conductive semiconductor layer, and wherein the first radiation sources and the second radiation sources are in contact with each other.

[0007] In some embodiments, the second isotope cell layer may comprise: the second radiation sources; a first conductive semiconductor layer partially surrounding the second radiation sources such that one surface of the second radiation sources is exposed; and a second conductive semiconductor layer provided spaced apart from the second radiation sources with the first conductive semiconductor layer in between, and having second trenches on the surface spaced apart from the first conductive semiconductor layer.

[0008] In some embodiments, the first conductive semiconductor layer may include at least one surface coplanar with the one surface exposed to the first radiation sources.

[0009] In some embodiments, the first conductive semiconductor layer of the first isotope cell layer and the first conductive semiconductor layer of the second isotope cell layer may be in contact with each other.

[0010] In some embodiments, an interface may exist between the first conductive semiconductor layer of the first isotope cell layer and the first conductive semiconductor layer of the second isotope cell layer. In other embodiments, an interface may not exist between the first conductive semiconductor layer of the first isotope cell layer and the first conductive semiconductor layer of the second isotope cell layer.

[0011] In some embodiments, the first conductive semiconductor layer of the first isotope cell layer comprises: a first portion extending with a substantially constant thickness between the first radiation sources, a second portion covering the mutually facing portions of the first radiation sources, and a third portion covering the opposite side surface of the exposed side surface of the first radiation source, and the first conductive semiconductor layer of the first isotope cell layer may comprise third trenches formed by the first portion and the second portion.

[0012] In some embodiments, the first trenches may each have a corresponding third trench.

[0013] In some embodiments, the first conductive semiconductor layer of the second isotope cell layer comprises: a fourth portion extending with a substantially constant thickness between the second radiation sources, a fifth portion covering the mutually facing portions of the second radiation sources, and a sixth portion covering the opposite surface of the exposed side surface of the second radiation source, and the first conductive semiconductor layer of the second isotope cell layer may comprise fourth trenches formed by the fourth portion and the sixth portion.

[0014] In some embodiments, the second trenches may each have a corresponding fourth trench.

[0015] In some embodiments, the third trenches may extend in the first direction, and the fourth trenches may extend in the second direction.

[0016] In some embodiments, a radiation shielding layer may be further included on at least one of the outer surface of the first isotope cell layer and the outer surface of the second isotope cell layer.

[0017] To achieve the second technical objective, the present invention provides an isotope cell module comprising a first isotope cell unit and a second isotope cell unit stacked in the thickness direction. Each of the first isotope cell unit and the second isotope cell unit may include the isotope cell unit.

[0018] In some embodiments, the first isotope cell unit includes trenches extending in a first direction on a surface facing the second isotope cell unit, and the second isotope cell unit may include trenches extending in a second direction on a surface facing the first isotope cell unit.

[0019] The isotope battery unit and isotope battery module according to the embodiments of the present invention have the effect of excellent heat dissipation and cooling performance.

[0020] The effects obtainable from the exemplary embodiments of the present invention are not limited to those mentioned above, and other unmentioned effects can be clearly derived and understood by those skilled in the art to which the exemplary embodiments of the present disclosure belong from the following description. That is, unintended effects resulting from the implementation of the exemplary embodiments of the present disclosure can also be derived by those skilled in the art from the exemplary embodiments of the present disclosure.

[0021] FIG. 1 is a perspective view showing an isotope battery unit according to one embodiment of the present invention.

[0022] FIG. 2 is a plan view of the isotope cell unit of FIG. 1 centered on the radiation sources (111, 121).

[0023] FIG. 3 is a schematic cross-sectional view showing a cross-section of an isotope cell unit cut along the line III-III' of FIG. 2.

[0024] Figure 4 is a schematic cross-sectional view showing a cross-section of an isotope cell unit cut along the line IV-IV' of Figure 2.

[0025] Figure 5 is a schematic cross-sectional view showing a cross-section of an isotope cell unit cut along the V-V' line of Figure 2.

[0026] FIG. 6 is a schematic cross-sectional view showing a cross-section of an isotope cell unit cut along the line VI-VI' of FIG. 2.

[0027] FIG. 7 is a schematic side cross-sectional view showing an isotope battery module according to one embodiment of the present invention.

[0028] FIG. 8 is a schematic cross-sectional view showing an isotope battery module according to another embodiment of the present invention.

[0029] FIGS. 9 to 12 are cross-sectional views showing cross-sections of an isotope battery unit according to another embodiment of the present invention.

[0030] FIG. 13 is a schematic cross-sectional view showing an isotope battery module according to another embodiment of the present invention.

[0031] FIG. 14 is a conceptual diagram schematically showing an isotope battery module according to another embodiment of the present invention.

[0032] Hereinafter, preferred embodiments of the concept of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the concept of the present invention may be modified in various different forms, and the scope of the concept of the present invention should not be interpreted as being limited by the embodiments described below. It is preferable to interpret the embodiments of the concept of the present invention as being provided to more completely explain the concept of the present invention to those with average knowledge in the art. Identical reference numerals denote identical elements throughout. Furthermore, various elements and areas in the drawings are depicted schematically. Accordingly, the concept of the present invention is not limited by the relative sizes or spacing depicted in the accompanying drawings.

[0033] Terms such as first, second, etc. may be used to describe various components, but said components are not limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the concept of the present invention, the first component may be named the second component, and conversely, the second component may be named the first component.

[0034] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the concept of the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, expressions such as “comprising” or “having” are intended to indicate the existence of the features, number, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, actions, components, parts, or combinations thereof.

[0035] Unless otherwise defined, all terms used herein, including technical and scientific terms, have the same meaning as commonly understood by those skilled in the art to which the concept of the present invention pertains. Furthermore, it will be understood that commonly used terms, such as those defined in advance, should be interpreted as having meanings consistent with their intent in the context of the relevant technology, and should not be interpreted in an overly formal sense unless explicitly defined herein.

[0036] Where an embodiment can be implemented differently, a specific process sequence may be performed differently from the order described. For example, two processes described in succession may be performed substantially simultaneously or in the reverse order of the description.

[0037] In the accompanying drawings, variations of the depicted shapes may be expected, for example, depending on manufacturing technology and / or tolerances. Accordingly, embodiments of the present invention should not be interpreted as being limited to specific shapes of the areas depicted herein, but should include, for example, variations in shape resulting from the manufacturing process. All terms "and / or" used herein include each of the mentioned components and all combinations of one or more thereof. Additionally, the term "substrate" as used herein may refer to the substrate itself, or a laminated structure including the substrate and a certain layer or film formed on its surface. Furthermore, the term "surface of the substrate" in this specification may refer to the exposed surface of the substrate itself, or the outer surface of a certain layer or film formed on the substrate.

[0038]

[0039] FIG. 1 is a perspective view showing an isotope cell unit (10) according to an embodiment of the present invention. FIG. 2 is a plan view showing the isotope cell unit (10) of FIG. 1 centered on radiation sources (111, 121). FIG. 3 is a schematic cross-sectional view showing a cross section of the isotope cell unit (10) cut along the line III-III' of FIG. 2. FIG. 4 is a schematic cross-sectional view showing a cross section of the isotope cell unit (10) cut along the line IV-IV' of FIG. 2. FIG. 5 is a schematic cross-sectional view showing a cross section of the isotope cell unit (10) cut along the line V-V' of FIG. 2. FIG. 6 is a schematic cross-sectional view showing a cross section of the isotope cell unit (10) cut along the line VI-VI' of FIG. 2.

[0040] Referring to FIGS. 1 through 6, the isotope cell unit (10) may include a first isotope cell layer (101) comprising two or more first radiation sources (111) extending in a first direction (e.g., X-axis direction), and a second isotope cell layer (102) comprising two or more second radiation sources (121) extending in a second direction (e.g., Y-axis direction). Although FIG. 2 is illustrated as having the first direction and the second direction orthogonal, the present invention is not limited thereto. The first direction and the second direction may be any two directions that are not parallel to each other.

[0041] The first isotope cell layer (101) comprises two or more first radiation sources (111) extending in a first direction. In some embodiments, the two or more first radiation sources (111) may extend parallel to each other.

[0042] In some embodiments, the first radiation sources (111) may include a radioactive isotope that emits beta rays. For example, the first radiation sources (111) may be tritium ( 3 H, tritium), calcium-45( 45Ca), nickel-63 63 Ni), copper-67 67 Cu), strontium-90 ( 90 Sr), promethium-147( 147 Pm), osmium-194( 194 OS), Thulium-171( 171 Tm), thallium-204( 204 Tl), tantalum-182( 182 Ta), cadmium-115( 115 Cd), cadmium-113( 113 Cd), germanium-75( 75 Ge), cerium-141( 141 Ce), cerium-144( 144 Ce) and tungsten-185( 185 It may include one or more selected from the group consisting of W). However, the present invention is not limited to these.

[0043] In some embodiments, the first radiation sources (111) may include a radioisotope that emits alpha rays. For example, the first radiation sources (111) may be americium-241 ( 241 Am), americium-243( 243 Am), polonium-209( 209 Po), polonium-210( 210 Po), plutonium-238( 238 Pu), Plutonium-239 ( 239 Pu), curium-242( 242 Cm), curium-244( 244 Cm), curium-249( 249Cm), promethium-147( 147 Pm), uranium-238( 238 U), thorium-232( 232 Th), Radium-226( 226 Ra), bismuth-210( 210 Bi), neptunium-237( 237 Np), europium-152( 152 Eu), Francium-223 223 Fr), astatine-210( 210 At), protactinium-231( 231 Pa), einsteinium-253( 253 Es), californium-252( 2520 Cf), and berkelium-249( 249 It may include one or more selected from the group consisting of Bk). However, the present invention is not limited to these.

[0044] The first radiation source (111) can be formed by any method known to a person skilled in the art. For example, the first radiation source (111) can be formed by various methods such as plating, vapor deposition, and atomic layer deposition (ALD).

[0045] In some embodiments, the first radiation source (111) may be formed by plating. When the first radiation source (111) is formed by plating, the first radiation source (111) may be formed by performing electroplating after forming a seed layer. Optionally, the first radiation source (111) may be formed by electroless plating, in which case the formation of the seed layer may be omitted.

[0046] A first conductive semiconductor layer (113) may be provided on one side of the first radiation sources (111). The first conductive semiconductor layer (113) may partially surround the first radiation sources (111) so that one side surface of the first radiation sources (111) is exposed.

[0047] In some embodiments, the first conductivity type semiconductor layer (113) may be doped with first conductivity type dopants within the substrate.

[0048] The above description may include, for example, a III-V semiconductor material. The III-V semiconductor material may include InAlP, InGaP, InAlGaP, ZnSe, AlAs, AlAsP, or yttria-stabilized zirconia (YSZ).

[0049] In some embodiments, the substrate may comprise a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be undoped substrates.

[0050] In some other embodiments, the substrate may comprise a diamond substrate, a SiC substrate, a GaN substrate, a Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / GeO2 substrate, a Sm2O3 / Bi2O3 / B2O3 substrate, a Sm2O3 / Bi2O3 / GeO2 / B2O3 substrate, a sapphire substrate, or a combination thereof, and these may be substrates doped with a dopant.

[0051] In some other embodiments, the above description may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0052] Specifically, the above description includes BaSnO3, BaHfO3, BaZrO3, and BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x It may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0053] In some embodiments, the substrate may include an insulating substrate. In some embodiments, the substrate may include a semiconductor substrate.

[0054] In some embodiments, the first conductivity semiconductor layer (113) may comprise a metal oxide having a bandgap energy of 2.7 eV or more. In some embodiments, the metal oxide may have the chemical formula AMO3 (wherein A is one or more selected from the group consisting of La, Ba, Sr, and K, and M is one or more selected from the group consisting of Al, In, Ga, Ti, Sn, Hf, Ta, and Zr).

[0055] Specifically, the metal oxides are BaSnO3, BaHfO3, BaZrO3, and BaHf 1-x Ti x O3(here 0 <x<1), Ba 1-x La x SnO3(here 0 <x<1), Bi4Ge3O 12 , Al2O3, Y2O3, La2O3, Ga2O3, Bi2O3, ZrO2, HfO2, Ta2O5, TiO2, LaInO3, LaGaO3, SrZrO3, SrHfO3, SrTaO7, LaIn 1-x Ga x O3(here 0 <x<1), LaGaO3, SrTiO3, KTaO3, HfSiO4, Ta3Ti2O x It may include one or more selected from the group consisting of and LaAlO3 (where 0 <x<1).

[0056] The metal oxide is not only stable even in high temperature and high humidity environments, but also has high carrier mobility, so it can efficiently absorb radiation emitted from the first radiation source (111) and provide high energy conversion efficiency. In addition, there are no inelastic collisions during carrier movement, so there is no energy loss and it is advantageous for heat dissipation. For example, the metal oxide is 45 cm 2 / (V·s) or more, 80 cm 2 / (V·s) or more, 120 cm 2 / (V·s) or more, furthermore 300 cm 2 It can have a high carrier mobility of / (V·s) or higher.

[0057] These metal oxides are bidirectional doping materials and have the advantage of being able to provide high current or high voltage depending on the direction of the applied bias.

[0058] The first isotope cell layer (101) further includes a second conductive semiconductor layer (115). In some embodiments, the second conductive semiconductor layer (115) may be provided spaced apart from the first radiation source (111) with the first conductive semiconductor layer (113) in between. In FIGS. 1 to 6, the first conductive semiconductor layer (113) is shown in direct contact with the second conductive semiconductor layer (115), but the invention is not limited thereto. In some embodiments, an intrinsic semiconductor layer may be further provided between the first conductive semiconductor layer (113) and the second conductive semiconductor layer (115).

[0059] The second conductivity type semiconductor layer (115) may be doped with second conductivity type dopants within the substrate. The substrate of the second conductivity type semiconductor layer (115) may be the same as the substrate described in relation to the first conductivity type semiconductor layer (113). In some embodiments, the substrate of the second conductivity type semiconductor layer (115) may be the same as the substrate of the first conductivity type semiconductor layer (113). In other embodiments, the substrate of the second conductivity type semiconductor layer (115) may be different from the substrate of the first conductivity type semiconductor layer (113).

[0060] In some embodiments, the first conductivity semiconductor layer (113) may be doped with a first conductivity dopant. The second conductivity semiconductor layer (115) may be doped with a second conductivity dopant. The first conductivity semiconductor layer (113) and the second conductivity semiconductor layer (115) may generate electron-hole pairs by radiation emitted from the first radiation source (111).

[0061] In some embodiments, the first conductivity type dopant may be an n-type dopant and the second conductivity type dopant may be a p-type dopant. In other embodiments, the first conductivity type dopant may be a p-type dopant and the second conductivity type dopant may be an n-type dopant. A person skilled in the art will understand that, depending on the conductivity type of the dopant doped in each region, one of the first conductivity type semiconductor layer (113) and the second conductivity type semiconductor layer (115) may operate as a cathode and the other as an anode. That is, if the first conductivity type dopant is an n-type dopant and the second conductivity type dopant is a p-type dopant, the first conductivity type semiconductor layer (113) may act as an anode and the second conductivity type semiconductor layer (115) may act as a cathode. Conversely, if the first conductivity type dopant is a p-type dopant and the second conductivity type dopant is an n-type dopant, the first conductivity type semiconductor layer (113) can act as a cathode and the second conductivity type semiconductor layer (115) can act as an anode.

[0062] The region doped with the above n-type dopant may be a semiconductor region doped with, for example, nitrogen (N), phosphorus (P), arsenic (As), or antimony (Sb), which are Group 15 elements of the periodic table, or a compound semiconductor doped with nitrogen (N), phosphorus (P), arsenic (As), or antimony, which are Group 15 elements of the periodic table. In this specification, a compound semiconductor refers to a semiconductor composed of two or more elements, and may be, for example, silicon carbide, silicon oxide, aluminum phosphide (AlP), aluminum arsenide (AlAs), gallium arsenide (GaAs), or gallium nitride (GaN).

[0063] The region doped with the above p-type dopant may be a semiconductor region doped with, for example, boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table, or a compound semiconductor doped with boron (B), aluminum (Al), gallium (Ga), or indium (In), which are group 13 elements of the periodic table.

[0064] In some embodiments, the first conductivity semiconductor layer (113) and / or the second conductivity semiconductor layer (115) may include an organic material used in organic layers that receive light and generate power in fields such as solar cells. For example, the first conductivity semiconductor layer (113) and / or the second conductivity semiconductor layer (115) may include a thiophene-type compound. Meanwhile, the first conductivity semiconductor layer (113) and / or the second conductivity semiconductor layer (115) may be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic material and organic material.

[0065] In some embodiments, a depletion region may be formed near the interface where the first conductivity semiconductor layer (113) and the second conductivity semiconductor layer (115) come into contact with each other.

[0066] The second conductive semiconductor layer (115) of the first isotope cell layer (101) may have first trenches (117) on its surface. The first trenches (117) may be provided on the surface of the second conductive semiconductor layer (115) spaced apart from the first conductive semiconductor layer (113). That is, the first trenches (117) may be formed on the outer surface of the isotope cell unit (10).

[0067] In some embodiments, the extension direction of the first trenches (117) may be substantially the same as the extension direction of the first radiation sources (111). In some embodiments, the first trenches (117) may extend in the first direction.

[0068] The second isotope cell layer (102) comprises two or more second radiation sources (121) extending in a second direction. In some embodiments, the two or more second radiation sources (121) may extend parallel to each other.

[0069] Any material that can be used as the first radiation sources (111) may be used for the second radiation sources (121). In some embodiments, the second radiation sources (121) may include the same material as the first radiation sources (111). In some embodiments, the second radiation sources (121) may include a different material from the first radiation sources (111).

[0070] A first conductive semiconductor layer (123) may be provided on one side of the second radiation sources (121). The first conductive semiconductor layer (123) may partially surround the second radiation sources (121) so that one side surface of the second radiation sources (121) is exposed.

[0071] In some embodiments, the first conductivity type semiconductor layer (123) may be doped with first conductivity type dopants within the substrate. The substrate of the first conductivity type semiconductor layer (123) of the second isotope cell layer (102) may be the same as the substrate described in relation to the first conductivity type semiconductor layer (113) of the first isotope cell layer (101).

[0072] The second isotope cell layer (101) further includes a second conductive semiconductor layer (125). In some embodiments, the second conductive semiconductor layer (125) may be provided spaced apart from the second radiation source (121) with the first conductive semiconductor layer (123) in between.

[0073] The second conductivity type semiconductor layer (125) may be doped with second conductivity type dopants within the substrate. The substrate of the second conductivity type semiconductor layer (125) may be the same as the substrate described in relation to the first conductivity type semiconductor layer (113) of the first isotope cell layer (101). In some embodiments, the substrate of the second conductivity type semiconductor layer (125) may be the same as the substrate of the first conductivity type semiconductor layer (123). In other embodiments, the substrate of the second conductivity type semiconductor layer (125) may be different from the substrate of the first conductivity type semiconductor layer (123).

[0074] In some embodiments, the first conductivity semiconductor layer (123) may be doped with a first conductivity dopant. The second conductivity semiconductor layer (125) may be doped with a second conductivity dopant. The first conductivity semiconductor layer (123) and the second conductivity semiconductor layer (125) may generate electron-hole pairs by radiation emitted from the second radiation source (121).

[0075] In some embodiments, the first conductivity type dopant may be an n-type dopant and the second conductivity type dopant may be a p-type dopant. In other embodiments, the first conductivity type dopant may be a p-type dopant and the second conductivity type dopant may be an n-type dopant. Since the types of the n-type dopant and the p-type dopant have been described in relation to the first conductivity type semiconductor layer (113) and the second conductivity type semiconductor layer (115) of the first isotope cell layer (101), a detailed description is omitted here.

[0076] In some embodiments, the first conductivity semiconductor layer (123) and / or the second conductivity semiconductor layer (125) may include an organic material used in organic layers that receive light and generate power in fields such as solar cells. For example, the first conductivity semiconductor layer (123) and / or the second conductivity semiconductor layer (125) may include a thiophene-type compound. Meanwhile, the first conductivity semiconductor layer (123) and / or the second conductivity semiconductor layer (125) may be an organic-inorganic hybrid type by appropriately mixing the aforementioned inorganic material and organic material.

[0077] In some embodiments, a depletion region may be formed near the interface where the first conductivity semiconductor layer (123) and the second conductivity semiconductor layer (125) come into contact with each other.

[0078] The second conductive semiconductor layer (125) of the second isotope cell layer (102) may have second trenches (127) on its surface. The second trenches (127) may be provided on the surface of the second conductive semiconductor layer (125) spaced apart from the first conductive semiconductor layer (123). That is, the second trenches (127) may be formed on the outer surface of the isotope cell unit (10).

[0079] In some embodiments, the extension direction of the second trenches (127) may be substantially the same as the extension direction of the second radiation sources (121). In some embodiments, the second trenches (127) may extend in the second direction.

[0080] In some embodiments, the first conductive semiconductor layer (113) of the first isotope cell layer (101) may include first portions (1131) that extend with a substantially constant thickness between the first radiation sources (111). In some embodiments, the first conductive semiconductor layer (113) may include second portions (1132) that cover mutually facing portions of adjacent first radiation sources (111). In some embodiments, one side surface of the first radiation source (111) may be exposed from the first conductive semiconductor layer (113), and the first conductive semiconductor layer (113) may further include a third portion (1133) that covers the surface opposite to the one side surface.

[0081] In some embodiments, the first conductive semiconductor layer (113) of the first isotope cell layer (101) may include at least one surface that is substantially coplanar with the one side surface of the first radiation sources (111). In some embodiments, the first portion (1131) of the first conductive semiconductor layer (113) of the first isotope cell layer (101) may be disposed substantially coplanar with the one side surface of the first radiation sources (111).

[0082] In some embodiments, the first conductive semiconductor layer (123) of the second isotope cell layer (102) may include fourth portions (1234) that extend with substantially constant thickness between the second radiation sources (121). In some embodiments, the first conductive semiconductor layer (123) may include fifth portions (1235) that cover mutually facing portions of adjacent second radiation sources (121). In some embodiments, one side surface of the second radiation source (121) may be exposed from the second conductive semiconductor layer (123), and the second conductive semiconductor layer (123) may further include a sixth portion (1236) that covers the surface opposite to the one side surface.

[0083] In some embodiments, the first conductive semiconductor layer (123) of the second isotope cell layer (102) may include at least one surface that is substantially coplanar with the one side surface of the second radiation sources (121). In some embodiments, a fourth portion (1234) of the first conductive semiconductor layer (123) of the second isotope cell layer (102) may be disposed substantially coplanar with the one side surface of the second radiation sources (121).

[0084] In some embodiments, the first conductive semiconductor layer (113) of the first isotope cell layer (101) and the first conductive semiconductor layer (123) of the second isotope cell layer (102) may be in contact with each other. In some embodiments, the first portion (1131) of the first conductive semiconductor layer (113) of the first isotope cell layer (101) and the fourth portion (1234) of the first conductive semiconductor layer (123) of the second isotope cell layer (102) may be in contact with each other.

[0085] In some embodiments, when the first conductive semiconductor layer (113) of the first isotope cell layer (101) and the first conductive semiconductor layer (123) of the second isotope cell layer (102) come into contact, an interface may exist between the first conductive semiconductor layer (113) of the first isotope cell layer (101) and the first conductive semiconductor layer (123) of the second isotope cell layer (102).

[0086] In some other embodiments, when the first conductive semiconductor layer (113) of the first isotope cell layer (101) and the first conductive semiconductor layer (123) of the second isotope cell layer (102) come into contact, there may be no interface between the first conductive semiconductor layer (113) of the first isotope cell layer (101) and the first conductive semiconductor layer (123) of the second isotope cell layer (102).

[0087] In some embodiments, the first portion (1131), the second portion (1132), and the third portion (1133) of the first conductive semiconductor layer (113) of the first isotope cell layer (101) may have substantially constant thickness. In some embodiments, the first conductive semiconductor layer (113) of the first isotope cell layer (101) may have a third trench (119) defined by the first portion (1131) and the second portion (1132). In some embodiments, the third trench (119) may extend in the first direction. In some embodiments, the third trench (119) may correspond to the first trench (117) respectively. That is, the first trenches (117) may each have a corresponding third trench (119).

[0088] In some embodiments, the fourth portion (1234), the fifth portion (1235), and the sixth portion (1236) of the first conductive semiconductor layer (123) of the second isotope cell layer (102) may have substantially constant thickness. In some embodiments, the first conductive semiconductor layer (123) of the second isotope cell layer (102) may have a fourth trench (129) defined by the fourth portion (1234) and the fifth portion (1235). In some embodiments, the fourth trench (129) may extend in the second direction. In some embodiments, the fourth trench (129) may correspond to the second trench (127) respectively. That is, the second trenches (127) may each have a corresponding fourth trench (129).

[0089] The first trench (117) and the second trench (127) may be spaces filled with air or other fluids for cooling, and each may increase the heat transfer area where heat can be removed by natural convection and / or forced convection of the fluid. Accordingly, heat generated in the first isotope cell layer (101) and the second isotope cell layer (102) can be effectively released by the first trench (117) and the second trench (127). Furthermore, because the directions in which the first trench (117) and the second trench (127) extend are different from each other, relatively constant heat dissipation performance can be secured regardless of the orientation of the isotope cell unit (10).

[0090] In some embodiments, the cooling fluid filling the first trench (117) and the second trench (127) may be air. In some embodiments, the cooling fluid filling the first trench (117) and the second trench (127) may be a cooling gas such as an inert gas, nitrogen, etc. In other embodiments, the cooling fluid filling the first trench (117) and the second trench (127) may be a cooling liquid such as water, a glycol solution, or a dielectric fluid.

[0091] The above-described isotope battery unit (10) may include a first electrode (141) and a second electrode (142) capable of transmitting generated electrical energy to the outside. The type, size, and shape thereof of the first electrode (141) and the second electrode (142) are not particularly limited as long as they possess electrical conductivity without causing physical and chemical changes in the isotope battery unit (10). For example, the first electrode (141) and the second electrode (142) may be cylindrical, tetrahedral, hexahedral, torus-shaped, or pad-shaped. In some embodiments, the first electrode (141) and the second electrode (142) may each independently include a metal material such as gold (Au), silver (Ag), platinum (Pt), stainless steel, copper (Cu), aluminum (Al), nickel (Ni), or titanium (Ti), or include a transparent oxide such as fluorine (F)-doped tin oxide (FTO) or indium oxide (ITO, In2O3), or include a carbon-based compound such as a carbon nanotube, graphene, or graphene oxide.

[0092] In some embodiments, the isotope cell unit (10) may further include a radiation shielding layer (130). In some embodiments, the radiation shielding layer (130) may be provided on the outer surface of the second conductive semiconductor layer (115) of the first isotope cell layer (101). In some embodiments, the radiation shielding layer (130) may be provided on the outer surface of the second conductive semiconductor layer (125) of the second isotope cell layer (102).

[0093] In some embodiments, the radiation shielding layer (130) may be formed on the surface of the first trench (117) with a substantially constant thickness. In some embodiments, the radiation shielding layer (130) may be formed on the surface of the second trench (127) with a substantially constant thickness.

[0094] Since the radiation shielding layer (130) is formed with a substantially constant thickness, the shape of the first trench (117) and the second trench (127) can be substantially maintained. Therefore, while radiation leakage is prevented by the radiation shielding layer (130), the heat dissipation performance obtained by the first trench (117) and the second trench (127) can be substantially maintained.

[0095] In some embodiments, the radiation shielding layer (130) may include, for example, a metal such as copper or aluminum, a conductive polymer such as polyaniline, or a magnetic material such as iron oxide. Additionally, the radiation shielding layer (130) may be provided in the form of a sheet, mesh, coating layer, spray coating, nonwoven fabric, tape, or fabric layer. By faithfully providing the radiation shielding layer (130) to the isotope battery unit (10), the electromagnetic compatibility (EMC) of the isotope battery unit (10) can be ensured. Furthermore, in some embodiments, the radiation shielding layer (130) may prevent or reduce beta rays or other radiation (e.g., alpha rays or gamma rays) from escaping the isotope battery unit (10).

[0096] FIG. 7 is a schematic cross-sectional view showing an isotope battery module (1) according to one embodiment of the present invention.

[0097] Referring to FIG. 7, the isotope battery module (1) may include a first isotope battery unit (11) and a second isotope battery unit (12) stacked in the thickness direction. The first isotope battery unit (11) and the second isotope battery unit (12) may each include the isotope battery unit (10) described with reference to FIG. 1 to 6. Therefore, a detailed description of the first isotope battery unit (11) and the second isotope battery unit (12) is omitted here.

[0098] In some embodiments, the first isotope cell unit (11) and the second isotope cell unit (12) may be electrically connected in series. In some embodiments, the first isotope cell unit (11) and the second isotope cell unit (12) may be electrically connected in parallel. Although FIG. 7 shows the isotope cell module (1) comprising two isotope cell units (11, 12), a person skilled in the art will understand that the isotope cell module (1) may comprise any number of isotope cell units greater than two.

[0099] The first trenches (117) of the first isotope cell unit (11) of FIG. 7 may be extended in a first direction (e.g., the X-axis direction). Also, the second trenches (127, see FIG. 4) of the second isotope cell unit (12) may be extended in a second direction (e.g., the Y-axis direction). The first trenches (117) of the first isotope cell unit (11) and the second trenches (127) of the second isotope cell unit (12) may be arranged adjacent to each other in a third direction (e.g., the Z-axis direction). Furthermore, the first trenches (117) of the first isotope cell unit (11) and the second trenches (127) of the second isotope cell unit (12) may be connected to allow for the movement of gas between them.

[0100] Since the first trenches (117) of the first isotope battery unit (11) and the second trenches (127) of the second isotope battery unit (12) are connected to each other and allow for the movement of gas, natural convection in any direction can be carried out relatively smoothly. Therefore, a relatively constant heat dissipation performance can be secured regardless of the orientation of the isotope battery module (1).

[0101] FIG. 8 is a schematic cross-sectional view showing an isotope battery module (1a) according to another embodiment of the present invention.

[0102] The isotope cell module (1a) illustrated in FIG. 8 differs from the isotope cell module (1) illustrated in FIG. 7 in that some radiation shielding layers (130) are omitted, while all other aspects are identical. Therefore, the following description will focus on these differences.

[0103] Radiation shielding layers (130) may be omitted on the surface where the first isotope battery unit (11) and the second isotope battery unit (12) face each other in the above-mentioned isotope battery module (1a). The radiation shielding layer (130) is intended to prevent radiation emitted from the first radiation sources (111) or the second radiation sources (121) from leaking out of the isotope battery module (1a). Accordingly, radiation shielding layers (130) located between the isotope battery unit positioned at the top (here, the first isotope battery unit (11)) and the isotope battery unit positioned at the bottom (here, the second isotope battery unit (12)) in the isotope battery module may be omitted.

[0104] By omitting the radiation shielding layers between the isotope battery unit positioned at the top and the isotope battery unit positioned at the bottom of the above isotope battery module, the facing second conductivity semiconductor layers (115, 125) of adjacent isotope battery units (11, 12) can be electrically connected to each other.

[0105] FIGS. 9 to 12 are cross-sectional views showing cross-sections of an isotope cell unit according to another embodiment of the present invention, where FIGS. 9 to 12 each show cross-sections cut along the lines III-III', IV-IV', V-V', and VI-VI' of FIG. 2.

[0106] The embodiments of FIGS. 9 to 12 differ from the embodiments described with reference to FIGS. 1 to 6 in that they further include photon generating layers (151, 152), and the following description focuses on these differences.

[0107] Referring to FIGS. 9 to 12, a first photon generating layer (151) may be provided on the surface of the first radiation sources (111). Additionally, a second photon generating layer (152) may be provided on the surface of the second radiation sources (121). In FIGS. 9 to 12, the first photon generating layer (151) is shown to completely surround the outer edge of the first radiation sources (111) and the second photon generating layer (152) is shown to completely surround the outer edge of the second radiation sources (121), but the present invention is not limited thereto.

[0108] The first photon generating layer (151) may be provided on at least a portion of the surface of the first radiation sources (111). In some embodiments, the first photon generating layer (151) may be disposed between the first radiation sources (111) and the first conductive semiconductor layer (113) of the first isotope cell layer (101).

[0109] The second photon generating layer (152) may be provided on at least a portion of the surface of the second radiation sources (121). In some embodiments, the second photon generating layer (152) may be disposed between the second radiation sources (121) and the first conductive semiconductor layer (123) of the second isotope cell layer (102).

[0110] The first photon generating layer (151) and the second photon generating layer (152) may be any material layer capable of emitting photons in response to radiation particles, such as alpha rays, emitted from the first radiation source (111) and the second radiation source (121). In some embodiments, the first radiation sources (111) and the second radiation source (121) may be materials that emit alpha rays, and since such materials have been described above, a detailed description is omitted here.

[0111] For example, the first photon generating layer (151) and the second photon generating layer (152) may each independently employ materials such as Ba2Ca(BO3)2, BaHfO3, BaI2:Ce, BeO, BaF2, BaMgF4, Cs2LiLuCi6:Ce, K2YF5, KCaF3, YI3:Ce, but are not limited thereto. Various examples of the photon generating layer (210) are disclosed at https: / scintillator.lbl.gov / inorganic-scintillator-library / .

[0112] The first photon generating layer (151) and the second photon generating layer (152) can emit photons in response to alpha rays incident from the first radiation source (111) and the second radiation source (121). Photons generated in the first photon generating layer (151) and / or the second photon generating layer (152) can be incident on the junction region between the first conductive semiconductor layer (113, 123) and the second conductive semiconductor layer (115, 125), and electrical energy can be generated by the photons.

[0113] FIG. 13 is a schematic cross-sectional view showing an isotope battery module (1b) according to another embodiment of the present invention.

[0114] The isotope cell module (1b) illustrated in FIG. 13 differs from the isotope cell module (1a) described with reference to FIG. 8 in that it further includes photon generating layers (151, 152), and this difference will be explained below.

[0115] Referring to FIG. 13, the isotope battery module (1b) may include a first isotope battery unit (11) and a second isotope battery unit (12) stacked in the thickness direction. The first isotope battery unit (11) and the second isotope battery unit (12) may each include the isotope battery unit (10) described with reference to FIG. 9 to FIG. 12. Therefore, a detailed description of the first isotope battery unit (11) and the second isotope battery unit (12) is omitted here.

[0116] The first trenches (117) of the first isotope cell unit (11) of FIG. 13 may be extended in a first direction (e.g., the X-axis direction). Also, the second trenches (127, see FIG. 4) of the second isotope cell unit (12) may be extended in a second direction (e.g., the Y-axis direction). The first trenches (117) of the first isotope cell unit (11) and the second trenches (127) of the second isotope cell unit (12) may be arranged adjacent to each other in a third direction (e.g., the Z-axis direction). Furthermore, the first trenches (117) of the first isotope cell unit (11) and the second trenches (127) of the second isotope cell unit (12) may be connected to allow for the movement of gas between them.

[0117] Since the first trenches (117) of the first isotope battery unit (11) and the second trenches (127) of the second isotope battery unit (12) are connected to each other and allow for the movement of gas, natural convection in any direction can be carried out relatively smoothly. Therefore, relatively constant heat dissipation performance can be secured regardless of the orientation of the isotope battery module (1b).

[0118] Furthermore, the above-mentioned isotope battery module (1b) further includes photon generating layers (151, 152) on the surface of the radiation sources (111, 121).

[0119] In some embodiments, a first photon generating layer (151) may be provided on the surface of the first radiation sources (111). Also, a second photon generating layer (152) may be provided on the surface of the second radiation sources (121). In FIG. 13, the first photon generating layer (151) is shown to completely surround the outer edge of the first radiation sources (111) and the second photon generating layer (152) is shown to completely surround the outer edge of the second radiation sources (121), but the present invention is not limited thereto.

[0120] The first photon generating layer (151) may be provided on at least a portion of the surface of the first radiation sources (111). In some embodiments, the first photon generating layer (151) may be disposed between the first radiation sources (111) and the first conductive semiconductor layer (113) of the first isotope cell layer (101).

[0121] The second photon generating layer (152) may be provided on at least a portion of the surface of the second radiation sources (121). In some embodiments, the second photon generating layer (152) may be disposed between the second radiation sources (121) and the first conductive semiconductor layer (123) of the second isotope cell layer (102).

[0122] In some embodiments, photons emitted from the photon generating layers (151, 152) of the first isotope cell unit (11) may be incident on the second isotope cell unit (12) to contribute to generating electrical energy. In some embodiments, photons emitted from the photon generating layers (151, 152) of the second isotope cell unit (12) may be incident on the first isotope cell unit (11) to contribute to generating electrical energy.

[0123]

[0124] FIG. 14 is a conceptual diagram schematically showing an isotope battery module (1c) according to another embodiment of the present invention.

[0125] Referring to FIG. 14, a plurality of isotope cell units (11, 12, ..., N) may be stacked in the thickness direction. Each of the plurality of isotope cell units (11, 12, ..., N) may include an isotope cell unit (10) described with reference to FIG. 1 to 6.

[0126] The plurality of isotope cell units (11, 12, ..., N) may be accommodated within a housing (20). In some embodiments, the housing (20) may be configured to seal the plurality of isotope cell units (11, 12, ..., N) from the outside. In some embodiments, the housing (20) may include its own radiation shielding layer. In this case, the radiation shielding layer (130) of the isotope cell units (11, 12, ..., N) may be omitted.

[0127] A person skilled in the art will understand that the plurality of isotope cell units (11, 12, . . ., N) may be electrically connected to each other in series and / or parallel as needed. The plurality of isotope cell units (11, 12, . . ., N) may be connected to an external load through the first module electrode (31) and the second module electrode (32).

[0128] In some embodiments, the isotope cell module (1c) may further include a cooling device (40). The cooling device (40) may be configured to receive gas from inside the housing (20), cool it, and then supply it back into the housing (20).

[0129] After being cooled to a predetermined temperature in the cooling device (40), the gas supplied into the interior of the housing (20) can pass through the first trenches (117) and second trenches (127) described above. The gas can pass through the first trenches (117) and second trenches (127) by natural convection and / or forced convection. Since the extension directions of the first trenches (117) and the second trenches (127) are different from each other, a relatively constant heat dissipation performance can be secured regardless of the orientation of the isotope cell module (1c). In addition, because the adjacent first trenches (117) and second trenches (127) of two neighboring isotope cell units (11, 12, ..., N) are connected to each other, the cooling effect by convection can be maximized. As a result, the heat generated in the above-mentioned isotope cell units (11, 12, . . ., N) can be effectively removed.

[0130] As described above, although embodiments of the present invention have been described in detail, a person skilled in the art to which the present invention pertains will be able to modify and implement the present invention in various ways without departing from the spirit and scope of the present invention as defined in the appended claims. Therefore, future modifications to the embodiments of the present invention will not depart from the technology of the present invention.

[0131]

[0132] [Explanation of the symbol]

[0133] 1, 1a, 1b: Isotope battery modules

[0134] 10, 11, 12: Isotope battery unit

[0135] 20: Housing

[0136] 31: 1st module electrode

[0137] 32: Second module electrode

[0138] 40: Cooling device

[0139] 101: First isotope cell layer

[0140] 102: Second isotope cell layer

[0141] 111: First radiation source

[0142] 113, 123: First conductivity type semiconductor layer

[0143] 115, 125: Second conductivity type semiconductor layer

[0144] 117: 1st Trench

[0145] 119: 3rd Trench

[0146] 121: Second radiation source

[0147] 127: 2nd Trench

[0148] 129: 4th Trench

[0149] 130: Radiation shielding layer

[0150] 141: First electrode

[0151] 142: Second electrode

[0152] 151: First photon generation layer

[0153] 152: Second photon generation layer

Claims

1. A first isotope battery layer comprising two or more first radiation sources extending in a first direction; and A second isotope cell layer comprising two or more second radiation sources extending in a second direction different from the first direction; Includes, The above-mentioned first isotope cell layer is: The above first radiation sources; A first conductive semiconductor layer that partially surrounds the first radiation sources such that one side surface of the first radiation sources is exposed; and A second conductivity type semiconductor layer provided spaced apart from the first radiation sources with the first conductivity type semiconductor layer in between, and having first trenches on a surface spaced apart from the first conductivity type semiconductor layer; Includes, The above-mentioned first radiation sources and the above-mentioned second radiation sources are isotope cell units that cross and come into contact with each other.

2. In Paragraph 1, The above second isotope cell layer is: The above second radiation sources; A first conductive semiconductor layer partially surrounding the second radiation sources such that one surface of the second radiation sources is exposed; and A second conductivity type semiconductor layer provided spaced apart from the second radiation sources with the first conductivity type semiconductor layer in between, and having second trenches on a surface spaced apart from the first conductivity type semiconductor layer; An isotope battery unit characterized by including 3. In Paragraph 2, An isotope cell unit characterized in that the first trenches and the second trenches are each filled with a cooling fluid capable of cooling the first isotope cell layer and the second isotope cell layer.

4. In Paragraph 2, An isotope cell unit characterized in that the first conductive semiconductor layer comprises at least one surface coplanar with the one surface exposed to the first radiation sources.

5. In Paragraph 2, An isotope battery unit characterized in that the first conductive semiconductor layer of the first isotope battery layer and the first conductive semiconductor layer of the second isotope battery layer are in contact with each other.

6. In Paragraph 5, An isotope battery unit characterized by having an interface between the first conductive semiconductor layer of the first isotope battery layer and the first conductive semiconductor layer of the second isotope battery layer.

7. In Paragraph 5, An isotope battery unit characterized by the absence of an interface between the first conductive semiconductor layer of the first isotope battery layer and the first conductive semiconductor layer of the second isotope battery layer.

8. In Paragraph 2, The first conductivity type semiconductor layer of the first isotope cell layer is: A first portion extending with a substantially constant thickness between the first radiation sources; A second portion covering the mutually facing portions of the first radiation sources; and A third part covering the opposite surface of the exposed one-sided surface of the first radiation source; Includes, An isotope battery unit characterized in that the first conductive semiconductor layer of the first isotope battery layer comprises third trenches formed by the first portion and the second portion.

9. In Paragraph 8, An isotope battery unit characterized in that each of the above first trenches has a corresponding above third trench.

10. In Paragraph 8, The first conductivity type semiconductor layer of the second isotope cell layer is: A fourth portion extending with substantially constant thickness between the second radiation sources; A fifth portion covering the mutually facing portions of the second radiation sources; and A sixth part covering the opposite surface of the exposed one-sided surface of the second radiation source; Includes, An isotope battery unit characterized in that the first conductive semiconductor layer of the second isotope battery layer comprises fourth trenches formed by the fourth portion and the sixth portion.

11. In Paragraph 10, An isotope battery unit characterized in that each of the above-mentioned second trenches has a corresponding above-mentioned fourth trench.

12. In Paragraph 10, An isotope cell unit characterized in that the third trenches extend in the first direction and the fourth trenches extend in the second direction.

13. In Paragraph 1, An isotope battery unit characterized by further including a radiation shielding layer on at least one of the outer surface of the first isotope battery layer and the outer surface of the second isotope battery layer.

14. In Paragraph 13, An isotope battery unit characterized by the above-mentioned radiation shielding layer being formed with substantially uniform thickness.

15. Includes a first isotope cell unit and a second isotope cell unit stacked in the thickness direction, Each of the first isotope cell unit and the second isotope cell unit is an isotope cell module comprising the isotope cell unit of claim 1.

16. In Paragraph 15, The first isotope cell unit includes trenches extending in a first direction on the surface facing the second isotope cell unit, and An isotope cell module characterized in that the second isotope cell unit includes trenches extending in a second direction on a surface facing the first isotope cell unit.

Images