Method for producing a multi-material substrate

Abstract

Method for producing a substrate (100) comprising a surface layer of a first material and / or of a second material obtained from the first material, disposed on a support layer (104) of a third material, comprising: - ion implantation in a first substrate comprising the first material; - securing the first substrate to a temporary substrate such that a first part (114) of the first substrate is disposed against the temporary substrate; - cleaving the first substrate in order to retain the surface layer on the temporary substrate; - cutting the obtained assembly into a plurality of portions; - securing the portions to the support layer; - removing the temporary substrate present in each of the portions.

Description

[0001] METHOD FOR PRODUCING A MULTI-MATERIAL SUBSTRATE

[0002] TECHNICAL FIELD OF THE INVENTION

[0003] The field of the invention is that of the production of multi-material substrates, and in particular the production of a substrate comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material. The invention applies in particular to substrates intended to be used for the production of optoelectronic and / or photonic circuits, but also for the production of microelectronic circuits or photovoltaic devices.

[0004] STATE OF THE ART

[0005] Some expensive materials, such as III-V materials based on GaAs and / or InP, which are used in the fields of microelectronics, photonics or even photovoltaics due to their particular electrical and / or optical properties, are only available in the form of small substrates, for example with a diameter of 100 mm or 150 mm. This limitation in the dimensions of these substrates is due in particular to the difficulties encountered during the growth of these crystalline materials. In addition, the production of substrates comprising such materials is very expensive.

[0006] Despite the significant cost of using these materials, technologies using these particular materials and compatible with small substrates can achieve integration of components or circuits directly on these substrates. However, for integrations requiring larger diameter substrates, such as co-integration of InP-based chips with silicon components using 200 mm or 300 mm diameter substrates, commercial small InP substrates are not suitable.

[0007] To achieve co-integration of InP chips on silicon, a first solution consists of cutting a small diameter InP substrate incorporating a stop layer of crystalline material buried under an epitaxially grown InP layer to the desired thickness for the chips, into multiple portions, then transferring the InP portions onto a larger diameter silicon substrate at the desired locations on the silicon substrate. The transferred InP portions are then thinned to the desired thickness (by grinding, etching (chemical or plasma), CMP (chemical-mechanical planarization, or thinning), etc.), i.e. down to the stop layer. This stop layer allows the chip to be disassembled. It is in fact removed by selective etching to retain only the epitaxially grown InP film.

[0008] A major drawback of this first solution is that the InP removed by thinning, which is several hundred microns thick, is lost. The cost problem therefore still arises with this first solution given the large quantity of InP lost during thinning. In addition, this first solution requires, for the thinning of the InP portions, the presence of a necessarily crystalline barrier layer.

[0009] A second solution for co-integrating InP chips on silicon involves cutting a small-diameter InP substrate into multiple portions, then transferring the InP portions onto a first silicon substrate. The InP portions bonded to the first silicon substrate are then used as donors to transfer onto a second silicon substrate, by a Smart-cut™ type process, a thin film of InP in the form of disjointed, or non-contiguous, portions arranged next to each other. This second solution makes it possible, for example, to manufacture an InPOSi type substrate (with oxide present between the InP portions and the second silicon substrate) with a diameter equal to 200 mm or 300 mm. The InP portions bonded to the first silicon substrate can be reused several times to transfer thin films of InP in the form of disjointed portions onto several other second silicon substrates.

[0010] This second solution, however, poses numerous integration problems, in particular:

[0011] - the density with which the InP portions are secured to the first silicon substrate and the position of these portions on the first substrate cannot be modified and must correspond to those desired for all the substrates produced;

[0012] - partial transfer of the InP to the edge of the plate, due to the fact that the portions of InP secured to the first substrate are disjointed, or not contiguous, from each other;

[0013] - difficulties in implementing CMPs, both on the thin film of InP transferred to the second substrate and on the remaining parts of the portions of InP secured to the first substrate, due to the fact that these CMPs are carried out on portions of InP separate from each other.

[0014] Furthermore, the dimension of the final substrate, corresponding to that of the second silicon substrate, and its InP coverage rate must be taken into account when bonding the InP portions to the first substrate and dictates its diameter. This can lead to a low density of the InP portions on the first and second silicon substrates, thereby accentuating the problems described above.

[0015] The various problems set out above are also encountered for materials other than InP, in particular for all materials for which the production of a substrate is expensive and / or for which the dimensions of the substrates of these materials are limited.

[0016] STATEMENT OF THE INVENTION

[0017] The present invention aims to remedy all or part of the drawbacks of the state of the art cited above, and in particular to propose a solution for producing a substrate which may have large dimensions and comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material, minimizing the use of the first material and not requiring the use of a stop layer of crystalline material.

[0018] To this end, the invention proposes a method for producing a substrate comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material, comprising at least the following steps:

[0019] - ion implantation in a first substrate comprising the first material, forming an interface, or a cleavage plane, between a first part of the first substrate corresponding to a surface layer and a second part of the first substrate;

[0020] - securing the first substrate to a temporary substrate such that the surface layer of the first substrate is arranged between the temporary substrate and the second part of the first substrate;

[0021] - detachment, at the cleavage interface, of the second part of the first substrate from an assembly comprising at least the surface layer of the first substrate and the temporary substrate; - cutting said assembly into several portions such that each of the portions comprises at least a part of the surface layer of the first substrate and / or a part of a layer of the second material previously formed from the surface layer of the first substrate, and a part of the temporary substrate;

[0022] - securing each of the portions to the support layer such that, for each of the portions, the part of the surface layer of the first substrate and / or the layer of the second material is arranged between the support layer and the part of the temporary substrate;

[0023] - removal of the part of the temporary substrate from each of the portions, the parts of the surface layer of the first substrate and / or the layer of the second material remaining on the support layer forming the surface layer of the first material and / or the second material.

[0024] The portions are thus individualized from each other, i.e. disjointed. During the cutting step, the temporary substrate is completely crossed so that each of the portions obtained comprises a fraction of the temporary substrate.

[0025] A first advantage of this method is that there is no significant thickness of the first material and / or the second material to be removed, since only a surface layer of the first substrate is transferred to the temporary substrate.

[0026] Another advantage of this method is that the cutting of the portions, before transfer to the second substrate, is not carried out directly in the first substrate but after transfer of the surface layer of the first substrate to the temporary substrate. Thus, the first substrate can be reused to produce several substrates with densities of the parts of the first material and / or the second material on the second substrates and / or positions of these parts on the second substrates which can be different from one substrate to another. In addition, this makes it possible to avoid a partial transfer of the first material and / or the second material at the edge of the portions.

[0027] Such a process makes it possible to overcome several technological obstacles inherent in the use of pseudo-donor, to make the manufacturing of the final substrate more versatile (geometry, dimension, distribution, density of chips, nature of the final substrate, etc.) and at the same time offers new possibilities (for example III-V integration on intermediate substrates, etc.). Advantageously, the first material can correspond to at least one of the following materials: I nP, GaAs, GaN, LTO, LNO, SiC, diamond.

[0028] Furthermore, in an advantageous configuration, the diameter of the first substrate (or more generally the dimensions of the first substrate in the principal plane of the first substrate) may be equal to that of the temporary substrate and less than or equal to that of the final substrate (which corresponds to that of the support layer).

[0029] In an exemplary implementation, the method may be such that:

[0030] - the first substrate has a diameter less than or equal to 150 mm, and

[0031] - the support layer has a diameter greater than or equal to 200 mm, and

[0032] - the temporary substrate has a diameter less than or equal to 150 mm.

[0033] The method may further comprise, between the decoupling step and the cutting step, a mechanical-chemical planarization of faces of the second part of the first substrate and of the surface layer of the first substrate originating from the cleavage interface. In this case, the planarization is carried out on solid surfaces, not divided into several portions, which facilitates its implementation.

[0034] The method may further comprise:

[0035] - before the first substrate is secured to the temporary substrate, a first bonding layer is produced on the surface layer of the first substrate, the first substrate being secured to the temporary substrate comprising bonding (for example direct bonding) of the first bonding layer against a second bonding layer produced on the temporary substrate, and / or

[0036] - before the securing of each of the portions on the support layer, a third bonding layer is produced on the surface layer of the first substrate or the layer of the second material, the securing of each of the portions on the support layer comprising a bonding (for example a direct bonding) of the third bonding layer against a fourth bonding layer produced on the support layer.

[0037] Advantageously, the bonding layers may comprise an amorphous material, for example oxide such as silicon oxide, or for example amorphous silicon. In this case, the bonds produced may correspond to direct bonds between these bonding layers.

[0038] In a particular embodiment, the method may further comprise, between the steps of detaching and cutting, a production of the layer of the second material on the surface layer of the first substrate, and in which the attachment of each of the portions to the support layer is implemented such that, for each of the portions, the part of the layer of the second material is arranged between the support layer and the part of the surface layer of the first substrate.

[0039] In this case, the method may further comprise, after the removal of the part of the temporary substrate from each of the portions, removal of the parts of the surface layer of the first substrate remaining on the support layer.

[0040] In another embodiment, the method may further comprise, before the securing of the first substrate to the temporary substrate, a production of the layer of the second material on the surface layer of the first substrate, and in which the securing of the first substrate to the temporary substrate is implemented such that the layer of the second material is arranged between the surface layer of the first substrate and the temporary substrate.

[0041] The method may further comprise, before the first substrate is secured to the temporary substrate, a production of the layer of the second material on the surface layer of the first substrate, and may further comprise, between the steps of detachment and cutting, an elimination of the surface layer of the first substrate.

[0042] The method is advantageously implemented to produce large substrates on which InP blocks or any other material for which the implementation of this method is of interest, for example any material which cannot be obtained directly in the form of a large substrate.

[0043] The method can be implemented to produce InPOX type substrates, i.e. comprising portions of InP arranged on a support layer, for example based on silicon, with a bonding layer arranged between the support layer and the portions of InP. The bonding layer can comprise an amorphous material, for example oxide such as silicon oxide, or for example amorphous silicon.

[0044] Throughout the document, the term "on" is used without distinction of the orientation in space of the element to which this term relates. For example, in the characteristic "on a face of the first substrate", this face of the first substrate is not necessarily oriented upwards but can correspond to a face oriented in any direction. Furthermore, the arrangement of a first element on a second element must be understood as being able to correspond to the arrangement of the first element directly against the second element, without any intermediate element between the first and second elements, or as being able to correspond to the arrangement of the first element on the second element with one or more intermediate elements arranged between the first and second elements.

[0045] BRIEF DESCRIPTION OF THE FIGURES

[0046] Other advantages, aims and particular characteristics of the present invention will emerge from the following non-limiting description of at least one particular embodiment of the devices and methods which are the subject of the present invention, with reference to the appended drawings, in which:

[0047] - figures 1 to 7 represent the steps of a method for producing a substrate comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material, object of the present invention, according to a first embodiment;

[0048] - figures 8 to 16 represent the steps of a method for producing a substrate comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material, object of the present invention, according to a second embodiment;

[0049] - figures 17 to 23 represent the steps of a method for producing a substrate comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material, object of the present invention, according to a third embodiment;

[0050] - figures 24 to 31 represent the steps of a method for producing a substrate comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer of a third material, object of the present invention, according to a fourth embodiment.

[0051] Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the transition from one figure to another.

[0052] The different parts represented in the figures are not necessarily shown on a uniform scale, in order to make the figures more readable. The different possibilities (variants and embodiments) must be understood as not being mutually exclusive and can be combined with each other.

[0053] DETAILED DESCRIPTION OF THE INVENTION

[0054] A first embodiment of a method for producing a substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a layer, or substrate, support 104 of a third material is described below in connection with FIGS. 1 to 7.

[0055] This method is implemented from a first substrate 106 comprising the first material which corresponds for example to an expensive material and / or available only in the form of a small diameter substrate, such as a III-V material based on GaAs, InP, GaN,... or other types of materials such as LTO (lithium tantalate oxide) and / or LNO (LaNiOs) or even SiC (silicon carbide). In the exemplary embodiment described, the first material of the first substrate 106 (visible in FIG. 1) corresponds to InP.

[0056] The first substrate 106 has, for example, a diameter less than or equal to 150 mm. In the exemplary embodiment described, the first substrate 106 has a diameter equal to 100 mm.

[0057] The first substrate 106 is intended to be secured to a temporary substrate 108 of the same diameter as that of the first substrate 106. In the embodiment described, this securing is obtained by direct bonding between bonding layers previously formed on the first substrate 106 and the temporary substrate 108. Thus, a first bonding layer 110, comprising for example an amorphous material such as oxide, in particular SiO2, or amorphous silicon, is therefore deposited on the first substrate 106, on the side of the face of the first substrate 106 intended to form part of the surface layer of the substrate 100 which will be obtained at the end of the method.

[0058] An ion implantation is carried out in the first substrate 106, through the first bonding layer 110. The ions implanted in the first substrate 106 correspond for example to H+ ions. This ion implantation forms, within the first substrate 106, a cleavage interface, or plane, 112 between a first part 114 of the first substrate 106 and a second part 116 of the first substrate 106 (see figure 2). The first part 114 of the first substrate 106 forms a surface layer of the first substrate 106 on which the first bonding layer 110 is arranged.

[0059] Prior to the securing of the first substrate 106 to the temporary substrate 108, a second bonding layer 118, comprising for example an amorphous material such as oxide, in particular SiO2, or amorphous silicon, is deposited on the temporary substrate 108.

[0060] The first substrate 106 is then secured to the temporary substrate 108 such that the surface layer of the first substrate 106, i.e. the first part 114 of the first substrate 106, is arranged between the temporary substrate 108 and the second part 116 of the first substrate 106 (see FIG. 3). In the embodiment described, this securing corresponds to a direct oxide-oxide bonding carried out between the first and second bonding layers 110, 118.

[0061] The temporary substrate 108 has, for example, dimensions similar or close to those of the first substrate 106. In the embodiment described, the temporary substrate 108 has a diameter less than or equal to 150 mm, and here equal to 100 mm.

[0062] In the exemplary embodiment described, the temporary substrate 108 comprises silicon. Alternatively, the temporary substrate 108 may comprise any other material having, for example, a CTE close to that of the material of the first substrate 106 and / or inexpensive, for example glass.

[0063] As a variant of the embodiment described here, it is possible for the bonding between the first substrate 106 and the temporary substrate 108 to be obtained by implementing a bonding technique different from direct oxide / oxide bonding. In this case, the first and second bonding layers 110, 118 may not be produced on the first substrate 106 and the temporary substrate 108.

[0064] A detachment, at the cleavage interface 112, of the second part 116 of the first substrate 106 with respect to the assembly comprising at least the first part 114 of the first substrate 106 and the temporary substrate 108, is then implemented. A heat treatment can be implemented during this detachment. The assembly obtained is shown in FIG. 4 and further comprises, in the exemplary embodiment described, the bonding interface formed by the first and second bonding layers 110, 118. The substrate obtained is for example of the InPOSi (or InP on silicon) type. The second part 116 of the first substrate 106 is then recycled to be reused later during the production of a new assembly as shown in FIG. 4.For example, the face of the second portion 116 of the first substrate 106 which has been detached from the first portion 114 can be subjected to polishing and cleaning steps so that the second portion 116 of the first substrate 106 can be used for producing a new assembly such as shown in FIG. 4. Such polishing and cleaning steps are also implemented on the first portion 114 of the first substrate 106.

[0065] At this stage of the process, in a particular configuration, it is possible to implement, from the surface layer formed by the first part 114 of the first substrate 106 transferred to the temporary substrate 108, integration steps conventionally carried out in the field of III-V materials (heat treatment, epitaxy, cleaning, CMP, etc.).

[0066] The assembly obtained comprising at least the first part 114 of the first substrate 106 and the temporary substrate 108 is then cut into several portions, or chips, 120 such that each of the portions 120 comprises at least a part of the surface layer of the first substrate 106, that is to say of the first part 114 of the first substrate 106, and a part of the temporary substrate 108. In the exemplary embodiment described, each of the portions 120 also comprises a part of the bonding interface formed by the first and second bonding layers 110, 118. In FIG. 5, four portions 120 are shown. Each of the portions 120 corresponds for example to a block whose section, in a plane parallel to the face of the first part 114 of the first substrate 106 against which the first bonding layer 110 is located, is rectangular in shape. Other shapes of portions 120 are conceivable.Furthermore, the dimensions of each of the portions 120 depend on the applications envisaged for the substrate 100, and are in particular such that the portions 120 can subsequently be handled during “pick and place” type steps (for example between a few millimeters and several centimeters).

[0067] Figure 5 also shows that the temporary substrate 108 is cut into several parts, that is to say that it is completely crossed according to its thickness during cutting.

[0068] The portions 120 are then secured to the support layer 104 such that, for each of the portions 120, the part of the first part 114 of the first substrate 106 is arranged between the support layer 104 and the part of the temporary substrate 108. In the exemplary embodiment described, this securing is obtained between bonding layers, corresponding for example to oxide layers allowing the implementation of direct bonding, formed beforehand on the first part 114 of the first substrate 106 and the support layer 104. Thus, prior to this securing, a third bonding layer 122, corresponding for example to a layer of amorphous material such as oxide, for example SiO2, is therefore deposited on the first part 114 of the first substrate 106, and a fourth bonding layer 124, corresponding for example to a layer of amorphous material such as oxide, for example SiO2, is deposited on the support layer 104.The positions of the portions 120 on the support layer 104 as well as the density with which the portions 120 are transferred onto the support layer 104 depend on the intended applications for the substrate 100 obtained at the end of the process.

[0069] In the exemplary embodiment described, the support layer 104 corresponds to a substrate whose diameter is greater than that of the first substrate 106, for example greater than or equal to 200 mm. The support layer 104 comprises, for example, silicon. Alternatively, the support layer 104 may comprise one or more materials other than silicon, depending on the intended applications for the substrate 100 obtained at the end of the method.

[0070] A consolidation annealing of the bonding carried out between the portions 120 and the support layer 104 can be implemented.

[0071] The substrate 100 is completed by removing the portion of the temporary substrate 108 from each of the portions 120. In the exemplary embodiment described, the portions of the bonding interface formed by the first and second bonding layers 110, 118 and present in each of the portions 120 are also removed. This removal of material is for example carried out by implementing a grinding step and / or CMP and / or by liquid phase or plasma chemical etching. The substrate 100 obtained is shown in FIG. 7. In the substrate 100, the portions of the surface layer of the first substrate 106 (formed by the first portion 114 of the first substrate 106) present on the support layer 104 (and also on the bonding interface formed by the third and fourth bonding layers 122, 124) form a surface layer of the first material of the substrate 100.

[0072] A second embodiment of a method for producing a substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on the support layer 104 of a third material is described below in connection with FIGS. 8 to 16.

[0073] The steps previously described in connection with Figures 1 to 4 are first implemented, these steps being represented in Figures 8 to 11. The first substrate 106, the bonding layers 110, 118 and the temporary substrate 108 used in this second embodiment are for example similar to those used in the first embodiment. At the end of these steps, the assembly obtained comprises the first part 114 of the first substrate 106 forming a surface layer arranged on a temporary substrate 108 and secured thereto by a bonding interface formed by the first and second bonding layers 110, 118.

[0074] A layer 126 of at least one second material is then produced on the first part 114 of the first substrate 106 (see FIG. 12). This layer 126 is for example produced by epitaxy using the first part 114 of the first substrate 106 as a growth substrate. The second material corresponds to a material whose crystallographic structure is in lattice agreement with that of the first material of the first part 114 of the first substrate 106. When the first material corresponds to InP, the second material corresponds for example to a III-V material such as InGaP or InGaAs. The layer 126 may also correspond to a stack of several different materials, forming for example devices such as diodes, sensors, etc.

[0075] The assembly obtained is then cut into several portions 120 such that each of the portions 120 comprises at least a part of the surface layer of the first substrate 106, that is to say the first part 114 of the first substrate 106, and a part of the temporary substrate 108. In the exemplary embodiment described, each of the portions 120 also comprises a part of the bonding interface formed by the first and second bonding layers 110, 118 and a part of the layer 126 of the second material. In Figure 13, four portions 120 are shown. Each of the portions 120 has a geometry (shape, dimensions) for example similar to that previously described for the first embodiment.

[0076] The portions 120 are then secured to the support layer 104 such that, for each of the portions 120, the part of the layer 126 of the second material is arranged between the support layer 104 and the part of the temporary substrate 108 (see FIG. 14). In the embodiment described, this securing is obtained between bonding layers, corresponding for example to oxide layers allowing the implementation of direct bonding, previously formed on the layer 126 of the second material and the support layer 104. Prior to this securing, a third bonding layer 122, corresponding for example to a layer of amorphous material such as oxide, for example SiO2, is therefore deposited on the layer 126 of the second material, and a fourth bonding layer 124, corresponding for example to a layer of amorphous material such as oxide, for example SiO2, is deposited on the support layer 104.The positions of the portions 120 on the support layer 104 as well as the density with which the portions 120 are transferred onto the support layer 104 depend on the intended applications for the substrate 100.

[0077] The support layer 104 used in this second embodiment is for example similar to that previously described in connection with the first embodiment.

[0078] A consolidation annealing of the bonding carried out between the portions 120 and the support layer 104 can then be carried out.

[0079] The part of the temporary substrate 108 of each of the portions 120 is then removed. In the exemplary embodiment described, the parts of the bonding interface formed by the first and second bonding layers 110, 118 and present in each of the portions 120 are also removed. This removal of material is for example carried out by implementing a grinding step and / or CMP and / or by liquid or plasma phase chemical etching. The structure obtained at this stage is shown in FIG. 15.

[0080] The substrate 100 is completed by removing the parts of the surface layer of the first substrate 106, i.e. the first part 114 of the first substrate 106, present on the parts of the layer 126 of the second material. The layer 126 of the second material can be used as a barrier layer. In the resulting substrate 100 visible in FIG. 16, the parts of the layer 126 of the second material present on the support layer 104 (and also on the bonding interface formed by the third and fourth bonding layers 122, 124) form a surface layer of the first material of the substrate 100.

[0081] Alternatively, it is possible not to remove the parts of the surface layer of the first substrate 106. In this case, the substrate 100 obtained corresponds to the structure visible in FIG. 15, and comprising a surface layer formed by the parts of the surface layer of the first substrate 106 and the parts of the layer 126 of the second material, that is to say comprising the first and second materials.

[0082] The various embodiment variants previously described for the first embodiment can also be applied to the second embodiment.

[0083] A third embodiment of a method for producing a substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on the support layer 104 of a third material is described below in connection with FIGS. 17 to 23.

[0084] The method according to this third embodiment is implemented from the first substrate 106 which is for example similar to that previously described for the first and second embodiments (see figure 17).

[0085] Unlike the first and second embodiments previously described in which the first bonding layer 110 is produced directly on the first substrate 106 before the latter is transferred to the temporary substrate 108, the layer 126 of the second material is here produced directly on the first substrate 106, for example by epitaxy, on the side of the first substrate 106 intended to form the first part 114.

[0086] The layer 126 of the second material produced in this third embodiment is for example similar to that previously described in connection with the second embodiment. Similarly, the temporary substrate 108 used in this third embodiment is for example similar to that used in the first and second embodiments previously described.

[0087] The first bonding layer 110 is then produced on the layer 126 of the second material, then the ion implantation forming the cleavage interface 112 separating the first and second parts 114, 116 of the first substrate 106 is implemented. The assembly obtained at this stage of the process is shown in Figure 18.

[0088] Prior to the securing of the first substrate 106 to the temporary substrate 108, a second bonding layer 118, corresponding for example to a layer of amorphous material such as oxide, for example SiO2, is deposited on the temporary substrate 108.

[0089] The assembly formed by the first substrate 106, the layer 126 of the second material and the first bonding layer 110 is secured to the temporary substrate 108 such that the surface layer of the first substrate 106, i.e. the first part 114 of the first substrate 106, is arranged between the temporary substrate 108 and the second part 116 of the first substrate 106, and the layer 126 of the second material is arranged between the surface layer of the first substrate 106 and the temporary substrate 108 (see FIG. 19). In the embodiment described, this securing corresponds to a direct oxide-oxide bonding carried out between the first and second bonding layers 110, 118. As for the first and second embodiments, other types of securing are possible.

[0090] A detachment, at the cleavage interface 112, of the second part 116 of the first substrate 106 with respect to the assembly comprising the first part 114 of the first substrate 106, the layer 126 of the second material and the temporary substrate 108, is then implemented. The assembly obtained is shown in FIG. 20 and further comprises, in the exemplary embodiment described, the bonding interface formed by the first and second bonding layers 110, 118.

[0091] The assembly obtained is then cut into several portions 120 such that each of the portions 120 comprises at least a part of the surface layer of the first substrate 106, that is to say the first part 114 of the first substrate 106, and a part of the temporary substrate 108. In the exemplary embodiment described, each of the portions 120 also comprises a part of the bonding interface formed by the first and second bonding layers 110, 118 and a part of the layer 126 of the second material. In Figure 21, four portions 120 are shown. Each of the portions 120 has a geometry (shape, dimensions) for example similar to that previously described for the first embodiment.

[0092] The portions 120 are then secured to the support layer 104 such that, for each of the portions 120, the part of the layer 126 of the second material is arranged between the support layer 104 and the part of the temporary substrate 108. In the exemplary embodiment described, this securing is obtained between bonding layers, corresponding for example to layers of amorphous material such as oxide allowing the implementation of direct bonding, formed beforehand on the first part 114 of the first substrate 106 and the support layer 104. Prior to this securing, a third bonding layer 122, corresponding for example to an oxide layer such as SiO2, is therefore deposited on the first part 114 of the first substrate 106, and a fourth bonding layer 124, corresponding for example to an oxide layer such as SiO2, is deposited on the support layer 104.The positions of the portions 120 on the support layer 104 as well as the density with which the portions 120 are transferred onto the support layer 104 depend on the intended applications for the substrate 100. The structure obtained at the end of this joining is shown in figure 22. As for the first and second embodiments, other types of joining are possible.

[0093] The support layer 104 used in this third embodiment is for example similar to that previously described in connection with the first and second embodiments.

[0094] A consolidation annealing of the bonding carried out between the portions 120 and the support layer 104 can be implemented.

[0095] The part of the temporary substrate 108 of each of the portions 120 is then removed. In the exemplary embodiment described, the parts of the bonding interface formed by the first and second bonding layers 110, 118 and present in each of the portions 120 are also removed. This removal of material is for example carried out by implementing a grinding and / or CMP step and / or by liquid or plasma chemical etching. In the substrate 100 obtained visible in FIG. 23, the parts of the layer 126 of the second material and of the first part 114 of the first substrate 106 present on the support layer 104 (more precisely on the bonding interface formed by the third and fourth bonding layers 122, 124) form a surface layer of the substrate 100 comprising the first material and the second material.

[0096] The different embodiment variants previously described for the first and second embodiments can also be applied to the third embodiment.

[0097] A fourth embodiment of a method for producing a substrate 100 comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on the support layer 104 of a third material, is described below in connection with FIGS. 24 to 31.

[0098] The steps previously described in connection with Figures 17 to 20 are first implemented, these steps being represented in Figures 24 to 27. The first substrate 106, the bonding layers 110, 118 and the temporary substrate 108 used in this fourth embodiment are for example similar to those used in the other embodiments. At the end of these steps, the assembly obtained comprises the first part 114 of the first substrate 106 and the layer 126 of the second material which form a surface layer arranged on the temporary substrate 108 and secured to it by the bonding interface formed by the first and second bonding layers 110, 118.

[0099] The first portion 114 of the first substrate 106 is then removed. This removal can be implemented using the layer 126 of the second material as a barrier layer (see Figure 28).

[0100] The assembly obtained is then cut into several portions 120 such that each of the portions 120 comprises at least a part of the layer 126 of the second material and a part of the temporary substrate 108. In the exemplary embodiment described, each of the portions 120 also comprises a part of the bonding interface formed by the first and second bonding layers 110, 118. In FIG. 29, four portions 120 are shown. The shape and dimensions of the portions 120 are for example similar or close to those described for the previous embodiments.

[0101] The portions 120 are then secured to the support layer 104 such that, for each of the portions 120, the part of the layer 126 of the second material is arranged between the support layer 104 and the part of the temporary substrate 108. In the exemplary embodiment described, this securing is obtained between bonding layers, corresponding for example to oxide layers allowing the implementation of direct bonding, formed beforehand on the layer 126 of the second material and the support layer 104. Prior to this securing, a third bonding layer 122, corresponding for example to an oxide layer such as SiO2, is therefore deposited on the layer 126 of the second material, and a fourth bonding layer 124, corresponding for example to an oxide layer such as SiO2, is deposited on the support layer 104.The positions of the portions 120 on the support layer 104 as well as the density with which the portions 120 are transferred onto the support layer 104 depend on the applications intended for the substrate 100. The structure obtained at the end of this joining is shown in figure 30.

[0102] The support layer 104 used in this fourth embodiment is for example similar to that previously described in connection with the previous embodiments.

[0103] A consolidation annealing of the bonding carried out between the portions 120 and the support layer 104 can be implemented. The part of the temporary substrate 108 of each of the portions 120 is then eliminated. In the exemplary embodiment described, the parts of the bonding interface formed by the first and second bonding layers 110, 118 and present in each of the portions 120 are also removed. This removal of material is for example carried out by implementing a grinding and / or CMP step and / or by liquid or plasma phase chemical etching. In the substrate 100 obtained visible in FIG. 31, the parts of the layer 126 of the second material present on the support layer 104 (more precisely on the bonding interface formed by the third and fourth oxide layers 122, 124) form a surface layer of the substrate 100 comprising the second material.

[0104] The different embodiment variants previously described for the first, second and third embodiments can also be applied to the fourth embodiment.

[0105] In the various embodiments previously described, the support layer 104 used corresponds to a material substrate not comprising active elements, for example a silicon substrate. Alternatively, it is possible for the support layer 104 to correspond to a substrate comprising several materials, for example a semiconductor-on-insulator type substrate such as an SOI (silicon-on-insulator) substrate, and / or comprising active elements or components such as CMOS components.

Claims

CLAIMS 1. Method for producing a substrate (100) comprising a surface layer of a first material and / or a second material obtained from the first material, arranged on a support layer (104) of a third material, comprising at least the following steps: - ion implantation in a first substrate (106) comprising the first material, forming a cleavage interface (112) between a first part (114) of the first substrate (106) corresponding to a surface layer and a second part (116) of the first substrate (106); - securing the first substrate (106) to a temporary substrate (108) such that the surface layer of the first substrate (106) is arranged between the temporary substrate (108) and the second part (116) of the first substrate (106); - detachment, at the cleavage interface (112), of the second part (116) of the first substrate (106) from an assembly comprising at least the surface layer of the first substrate (106) and the temporary substrate (108); - cutting said assembly into several portions (120) such that each of the portions (120) comprises at least a part of the surface layer of the first substrate (106) and / or a part of a layer of the second material (126) previously formed from the surface layer of the first substrate (106), and a part of the temporary substrate (108); - securing each of the portions (120) to the support layer (104) such that, for each of the portions (120), the part of the surface layer of the first substrate (106) and / or of the layer of the second material (126) is arranged between the support layer (104) and the part of the temporary substrate (108); - removing the part of the temporary substrate (108) from each of the portions (120), the parts of the surface layer of the first substrate (106) and / or of the layer of the second material (126) remaining on the support layer (104) forming the surface layer of the first material and / or of the second material.

2. Method according to claim 1, in which the first material corresponds to at least one of the following materials: I nP, GaAs, GaN, LTO, LNO, SiC, diamond.

3. Method according to one of the preceding claims, in which the diameter of the first substrate (106) is equal to that of the temporary substrate (108) and is less than or equal to that of the support layer (104).

4. Method according to one of the preceding claims, further comprising, between the detachment step and the cutting step, a mechanical-chemical planarization of faces of the second part (116) of the first substrate (106) and of the surface layer of the first substrate (106) originating from the cleavage interface (112).

5. Method according to one of the preceding claims, further comprising: - before the securing of the first substrate (106) to the temporary substrate (108), a production of a first bonding layer (110) on the surface layer of the first substrate (106), the securing of the first substrate (106) to the temporary substrate (108) comprising a bonding of the first bonding layer (110) against a second bonding layer (118) produced on the temporary substrate (108), and / or - before the securing of each of the portions (120) on the support layer (104), a production of a third bonding layer (122) on the surface layer of the first substrate (106) or the layer of the second material (126), the securing of each of the portions (120) on the support layer (104) comprising a bonding of the third bonding layer (122) against a fourth bonding layer (124) produced on the support layer (104).

6. Method according to one of the preceding claims, further comprising, between the steps of detaching and cutting, a production of the layer of the second material (126) on the surface layer of the first substrate (106), and in which the securing of each of the portions (120) on the support layer (104) is implemented such that, for each of the portions (120), the part of the layer of the second material (126) is arranged between the support layer (104) and the part of the surface layer of the first substrate (106).

7. Method according to claim 5, further comprising, after the removal of the part of the temporary substrate (108) from each of the portions (120), a removal of the parts of the surface layer of the first substrate (106) remaining on the support layer (104).

8. Method according to one of claims 1 to 5, further comprising, before the securing of the first substrate (106) on the temporary substrate (108), a production of the layer of the second material (126) on the surface layer of the first substrate (106), and in which the securing of the first substrate (106) on the temporary substrate (108) is implemented such that the layer of the second material (126) is arranged between the surface layer of the first substrate (106) and the temporary substrate (108).

9. Method according to one of claims 1 to 5, further comprising, before the securing of the first substrate (106) on the temporary substrate (108), a production of the layer of the second material (126) on the surface layer of the first substrate (106), and further comprising, between the steps of detachment and cutting, an elimination of the surface layer of the first substrate (106).

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