Light emitter module
The light-emitting module with dimming structures addresses uneven light output by adjusting brightness through partial transmission and reflection, ensuring uniformity and cost-effectiveness.
Patent Information
- Application Number
- FR2023001943
- Authority / Receiving Office
- FR · FR
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-03-10
- Filing Date
- 2023-03-02
- Publication Date
- 2025-11-28
- Estimated Expiration
- 2043-03-02
AI Technical Summary
Conventional backlight modules using LEDs suffer from uneven light output due to high directivity of LED chips, leading to dark areas and increased costs when spacing is reduced to improve visual quality.
A light-emitting module with dimming structures having varying thicknesses, arranged above the LEDs, which partially transmit and reflect light to adjust brightness and enhance uniformity, using a substrate, encapsulation material, and reflective materials to extend light transmission distance.
The module achieves uniform light output without increasing LED density, reducing manufacturing costs by optimizing light distribution and maintaining brightness.
Smart Images

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Abstract
Description
Title of the invention: Light Emitting Module BACKGROUND 1. Technical field
[0001] The present invention relates to a light-emitting module and, in particular, it relates to a light-emitting module comprising dimming structures. 2. Description of the associated prior art
[0002] In recent years, light-emitting diodes (LEDs) have gradually replaced traditional light sources due to their advantages, such as their small size, high brightness, and low power consumption. Light-emitting diodes are widely used in backlight modules as light-emitting elements.
[0003] The design of current backlight modules includes light-emitting elements mounted on a printed circuit board, which has the disadvantage of a short light transmission path. Consequently, when the spacing between light-emitting elements is too large, a dark area appears between them, resulting in a poor visual experience. Although the above problem can be improved by reducing the spacing between the LEDs, the number of LEDs increases when the spacing is reduced, leading to an increase in cost.
[0004] Furthermore, since LED chips have high directivity, the brightness of the light directly above the LED chips is relatively high in a conventional light-emitting device. Consequently, the light output of the light-emitting device is uneven. In summary, there is a need for a light-emitting module that can solve the above problems. BRIEF SUMMARY
[0005] The present invention relates to a light-emitting module. The light-emitting module comprises a substrate, light-emitting elements, an encapsulation material, and dimming structures. The light-emitting elements are arranged on the substrate. The encapsulation material covers the light-emitting elements and the substrate, and the encapsulation material has an encapsulation height H. The dimming structures are arranged on the encapsulation material or integrated within the encapsulation material, the dimming structures having a maximum dimming thickness h. The encapsulation thickness H and the maximum dimming thickness h satisfy the following relationship: 0.01 < h / H < 1.
[0006] Advantageously, each of the dimming structures is located above one of the light-emitting elements.
[0007] Advantageously, each of the gradation structures has an external diameter D, and the external diameter D, the encapsulation thickness H and the maximum gradation thickness h satisfy the following relationship: 0 < (H + h) / D < 1.
[0008] Advantageously, a spacing P between neighboring light-emitting elements and an external diameter D of each of the dimming structures satisfy the following relationship: 0 < D / P < 1.
[0009] Advantageously, a thickness W of the light-emitting elements is less than an external diameter D of the dimming structures.
[0010] Advantageously, the encapsulation thickness H and the maximum gradation thickness h satisfy the following relationship: 0.1 < h / H < 0.25.
[0011] Advantageously, a position of the gradation structures with the maximum gradation thickness overlaps the light-emitting elements in a direction normal to the substrate.
[0012] Advantageously, a surface of each of the gradation structures is a curved surface with a gradient slope.
[0013] Advantageously, a position of maximum gradation thickness of each of the gradation structures corresponds to the center of the curved surface.
[0014] Advantageously, a shape of the curved surface corresponds to a quadratic function: y = ax2 + bx + c, where x is a position in a direction parallel to the substrate, and y is a position in a direction vertical to the substrate, and a < 0.
[0015] Advantageously, an absolute value of a constant term (Here) of the quadratic function is equal to the maximum gradation thickness h.
[0016] Advantageously, each of the gradation structures comprises:
[0017] a main gradation part having the maximum gradation thickness h; and
[0018] a plurality of gradation sub-parts arranged around the main gradation part, and having a thickness less than the maximum gradation thickness h.
[0019] Advantageously, the plurality of grading subparts includes internal grading subparts in contact with the main grading part, and the plurality of grading subparts and the main grading part together form a stepped profile in cross-sectional view.
[0020] Advantageously, the plurality of gradation subparts includes external gradation subparts separate from the main gradation part.
[0021] Advantageously, an external diameter of the main dimming part is greater than a width of the light-emitting elements.
[0022] Advantageously, a refractive index inside the gradation structures is uniform.
[0023] Advantageously, the gradation structures comprise a reflective material and a resin material.
[0024] Advantageously, the light-emitting elements comprise multiple light-emitting diode chips or multiple light-emitting diodes in chip package (CSP LEDs).
[0025] Advantageously, the substrate comprises integrated circuit chips, and each of the integrated circuit chips controls the light-emitting elements.
[0026] Advantageously, the gradation structures include parts with different thicknesses. Brief description of the drawings
[0027] Aspects of the present invention will be better understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with common industry practice, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
[0028] [Fig. 1 A] illustrates a three-dimensional diagram of a light-emitting module, according to certain embodiments of the present invention.
[0029] [Fig. IB] illustrates a cross-sectional view corresponding to line BB' of [Fig.1A], in accordance with certain embodiments of the present invention.
[0030] [Fig.lC] illustrates a cross-sectional view of a light-emitting module, in accordance with certain other embodiments of the present invention.
[0031] [Fig.1D] illustrates a cross-sectional view of a light-emitting module, according to certain other embodiments of the present invention.
[0032] [Fig.2A] illustrates a three-dimensional diagram of a light-emitting module, in accordance with certain other embodiments of the present invention.
[0033] [Fig.2B] illustrates a cross-sectional view corresponding to line BB' of [Fig.2A], in accordance with certain embodiments of the present invention.
[0034] [Fig.3A] illustrates a three-dimensional diagram of a light-emitting module, in accordance with certain other embodiments of the present invention.
[0035] [Fig.3B] illustrates a cross-sectional view corresponding to line BB' of [Fig.3A], in accordance with certain embodiments of the present invention.
[0036] [Fig.3C] illustrates a cross-sectional view corresponding to line CC of [Fig.3A], in accordance with certain embodiments of the present invention.
[0037] [Fig.4A] illustrates a three-dimensional diagram of a light-emitting module, in accordance with certain other embodiments of the present invention.
[0038] [Fig.4B] illustrates a cross-sectional view corresponding to line BB' of [Fig.4A], in accordance with certain embodiments of the present invention.
[0039] [Fig.4C] illustrates a cross-sectional view corresponding to line CC of [Fig.4A], in accordance with certain embodiments of the present invention.
[0040] [Fig.5A] is a light emission image resulting from a conventional light-emitting module during an actual test.
[0041] [Fig.5B] is a light emission image resulting from a light emitting module of the present invention during an actual test. DETAILED DESCRIPTION
[0042] This disclosure provides many different embodiments, or examples, for implementing different features of the provided object. Specific examples of components and arrangements are described below to simplify this disclosure. These are, of course, only examples and are not intended to be exhaustive. For example, the formation of a first feature on or above a second feature in the following description may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact.Furthermore, this disclosure may repeat reference numbers and / or letters in the various examples. This repetition is for the sake of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / or configurations discussed.
[0043] In addition, spatially relative terms, such as "under," "below," "lower," "above," "upper," and the like, may be used in this disclosure to facilitate the description of the relationship between an element or feature and one or more other elements or features as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation, in addition to the orientation shown in the figures. The device may be oriented differently (rotated 90 degrees or in other orientations), and the spatially relative terms used in this disclosure may also be interpreted accordingly.
[0044] The terms "about," "approximately," and "significantly" used in this disclosure generally refer to a given value or a range of 20%, 10%, 5%, 3%, 2%, 1%, or 0.5%. It should be noted that the quantities provided in the specification are approximate quantities, meaning that even if the terms "about," "approximately," or "significantly" are not When specified, the meanings of "about", "approximately" or "significantly" are always implicit.
[0045] Certain embodiments of the invention are described. Additional operations may be performed before, during, and / or after the steps described in these embodiments. Some of the steps described may be replaced or eliminated in different embodiments. Additional features may be added to the semiconductor device structure. Some of the described features may be replaced or eliminated in different embodiments. Although some embodiments are described with operations performed in a particular order, these operations may be performed in a different logical order.
[0046] The present invention relates to a light-emitting module comprising light-emitting elements and dimming structures located above the light-emitting elements, respectively, the dimming structures having the effect of partially transmitting light and partially reflecting light. Since the dimming structures of the present invention have sections of varying thicknesses, they can be used to adjust the brightness of the light above the light-emitting elements, so that the overall light output of the light-emitting module is more uniform. Consequently, the light-emitting module of the present invention has excellent brightness and uniformity, and can reduce the use of light-emitting diodes, thereby reducing manufacturing costs.
[0047] With reference to Figures IA and IB, [Fig. IA] is a three-dimensional diagram of a light-emitting module according to certain embodiments of the present invention, and [Fig. 1B] is a cross-sectional view corresponding to line BB' of [Fig. IA]. As shown in Figures IA and IB, a light-emitting module 10 may comprise a substrate 100, light-emitting elements 200, an encapsulation material 300, and dimming structures 400. A detailed description of the aforementioned elements will be given below.
[0048] In some embodiments, the substrate 100 comprises a base 101. For example, the base 101 may be a transparent or opaque substrate. In some embodiments, the base 101 is a flexible substrate. Therefore, the light-emitting module 10 may be a light-emitting module in the form of a highly curved backlight. In other embodiments, the base 101 is a rigid substrate. For example, the material of the base 101 may be resin, sapphire, silicon, glass, metal, ceramic, etc. As shown in [Fig. 1A], the substrate 100 may be a rectangular substrate.
[0049] As shown in [Fig. 1B], the substrate 100 may further comprise a conductive layer 102 on the base 101. Consequently, the substrate 100 can be electrically connected to the light-emitting elements 200 via the conductive layer 102. In some embodiments, as shown in [Fig. 1B], the light-emitting elements 200 are arranged on the substrate 100 in the manner of an inverted chip, and connecting elements 103 are located between the positive and negative electrodes of the light-emitting elements 200 and the conductive layer 102. The positive and negative electrodes of the light-emitting elements 200 are electrically connected to the conductive layer 102 via the connecting elements 103. In some embodiments, the conductive layer 102 comprises wiring lines drivers.
[0050] The material of the bonding elements 103 is a conductive material, which may include: alloys containing Au, alloys containing Ag, alloys containing Pd, alloys containing In, alloys containing Pb-Pd, alloys containing Au-Ga, alloys containing Au-Sn, alloys containing Sn, alloys containing Sn-Cu, alloys containing Sn-Cu-Ag, alloys containing Au-Ge, alloys containing Au-Si, alloys containing Al, alloys containing Cu-In, or other metallic materials. In one embodiment, the bonding elements 103 are mixtures comprising a metal and a flux.
[0051] It should be noted that [Fig. 1 A] is used only to schematically illustrate the structure of the light-emitting module 10; the structure of the conductive layer 102, the connecting elements 103, and other structures are not shown in detail. Furthermore, in some embodiments, the substrate 100 further comprises an insulating material (not shown) beneath the base 101.
[0052] As shown in Figures IA and IB, light-emitting elements 200 are arranged on the substrate 100. The light-emitting elements 200 of the present invention may comprise light-emitting diode chips or packaged light-emitting diodes (CSP LEDs). In some embodiments, the light-emitting elements 200 comprise light-emitting diode chips capable of emitting a specific wavelength. For example, the light-emitting elements 200 may include light-emitting diode chips emitting blue light or ultraviolet light. Furthermore, the light-emitting elements 200 may comprise a submillimeter-wavelength light-emitting diode chip (Mini LED Chip), or a micro-light-emitting diode chip (Micro LED Chip).The lateral length dimension of the aforementioned "Mini LED chip" can be approximately 100 sqm, 150 sqm, 200 sqm, 250 sqm, 300 sqm, 350 sqm, or 400 sqm. The lateral length dimension of the aforementioned "Micro LED chip" can be approximately 100 sqm or less, for example. of approximately 30 pm, 40 pm, 50 pm, 60 pm, 70 pm, 80 pm or 90 pm or less. In some embodiments, the 200 light-emitting elements may be in a housing with a reflector.
[0053] The light-emitting elements 200 in certain embodiments of the present invention may also include light-emitting diode chips or chip-packed light-emitting diodes (CSP LEDs). As shown in [Fig. 1B], each of the light-emitting elements 200 using CSP LEDs comprises a light-emitting diode (LED) chip 210 and a wavelength conversion layer 220 covering a top surface and side surfaces of the LED chip 210.
[0054] The light-emitting diode chip 210 is capable of emitting a specific wavelength. The wavelength conversion layer 220 may include quantum dot materials, phosphors, other suitable materials, or combinations thereof. The light-emitting module 10 can serve as a backlight for a display device. A light-emitting module 10 emitting white light is taken as an example. The light-emitting diode chip 210 may be a blue LED chip to emit blue light, while the wavelength conversion layer 220 includes yellow phosphors, which absorb some of the blue light and convert it into yellow light, and the yellow light is mixed with some of the blue light to produce white light.Alternatively, the 220 wavelength conversion layer includes red and green wavelength conversion materials to absorb some of the blue light and convert it into red and green light, respectively, and the red and green light are mixed with some of the blue light to produce white light.
[0055] In some other embodiments, as shown in [Fig. 1C], each of the light-emitting elements 200 may not have the wavelength conversion layer, and may include a light-emitting diode chip 210'. In embodiments in which each of the light-emitting elements 200 does not have a wavelength conversion layer, a wavelength conversion material such as phosphors or a quantum dot material may be added to the subsequently formed encapsulation material 300, the encapsulation material 300 covering the light-emitting elements 200 and the substrate 100. Consequently, the light-emitting wavelength of the light-emitting diode chip 210' is converted.In another embodiment, a wavelength conversion material can also be integrated into the LED chip 210', thereby converting the wavelength of light emission from the LED chip 210'.
[0056] In some embodiments, integrated circuit chips (not shown) may be arranged on the surface of the substrate 100, and each of the integrated circuit chips controls the light-emitting elements 200, respectively. In some embodiments, the integrated circuit chips and the light-emitting diode chips are located on the same surface of the substrate 100 and may be covered by the encapsulation material 300. In some embodiments, the light-emitting diode chips are located on the upper surface of the substrate 100, and the integrated circuit chips are located on the lower surface of the substrate 100. It should be noted that, for illustrative purposes, the following embodiments of the present invention will generally be described with the light-emitting elements 200 having the wavelength conversion layers 220.In reality, a person skilled in the art can adjust the configuration of the light-emitting elements according to the design requirements of the light-emitting module, which is not a limitation in the present invention.
[0057] With reference to Figures IA and IB, the encapsulation material 300 completely covers the light-emitting elements 200 and the substrate 100, and the encapsulation material 300 has an encapsulation thickness H. More specifically, the encapsulation material 300 may have a rough or smooth upper surface, which is not a limitation of the present invention. In some embodiments, as shown in [Fig. 1B], the encapsulation material has two lateral surfaces, which are coplanar with the two lateral surfaces of the substrate 100, respectively. The present invention does not specifically limit the composition of the encapsulation material 300. The encapsulation material 300 may comprise silicone resin, epoxy, acrylic, other suitable transparent materials, or combinations thereof. In some embodiments, the refractive index of the encapsulation material 300 is about 1.49 to about 1.6.
[0058] Referring again to Figures IA and IB, the gradation structures 400 are arranged on the surface of the encapsulation material 300, the gradation structures 400 comprising parts with different thicknesses, and the gradation structures having a maximum gradation thickness h. In embodiments of the present invention, the encapsulation thickness H and the maximum gradation thickness h satisfy the following relationship: 0.01 < h / H < 1. In some embodiments, the encapsulation thickness H and the maximum gradation thickness h satisfy the following relationship: 0.01 < h / H < 0.4. In some embodiments, the encapsulation thickness H and the maximum gradation thickness h satisfy the following relationship: 0.1 < h / H < 0.25.
[0059] As shown in Figures IA and IB, each dimming structure 400 can be located above the respective light-emitting element 200. In certain modes In realization, the position of each gradation structure 400 having the maximum gradation thickness h overlaps a light-emitting element 200 in the normal direction of the substrate 100.
[0060] The dimming structures 400 have the effect of partially transmitting and partially reflecting light, and can be used to adjust the brightness of the light emitted by the light-emitting elements 200. More specifically, since LED chips have high directivity, in conventional light-emitting devices, the brightness of the light directly above the LED chips is relatively high, resulting in uneven light output from the light-emitting devices. According to the dimming structures 400 in various embodiments of the present invention, the brightness of the light above the light-emitting elements can be adjusted, so that the light output of the light-emitting module as a whole is more uniform.
[0061] The 400 gradation structures may comprise a reflective material and a resin material. The reflective material may comprise metal oxide particles such as titanium oxide, aluminum oxide, zirconium oxide, silicon oxide, other suitable metal oxides, or combinations thereof. The resin material may comprise silicone resin, epoxy, acrylic, other suitable transparent materials, or a combination thereof. The 400 gradation structures are white in appearance.
[0062] In certain embodiments, since the reflective material (such as metal oxide particles) is uniformly distributed within the 400 gradation structures, the refractive index inside the 400 gradation structures is uniform. More specifically, when the refractive index inside the 400 gradation structures is uniform, the interior of the 400 gradation structures does not have any interfaces exhibiting an abrupt change in refractive index.
[0063] The transmission path of light from a light-emitting element 200 is illustrated by the arrows in [Fig. 1B]. Part of the light emitted by the light-emitting elements 200 passes through and is transmitted by the dimming structures 400, and another part of the light is reflected back into the encapsulating material 300 by the dimming structures 400. As a result, the transmission distance of the light emitted by the light-emitting elements 200 into the encapsulating material 300 can be increased, and the light output of the light-emitting module 10 can be more uniform. In some embodiments, the upper surface of the encapsulating material 300 has a rough surface, so as to eliminate total light reflection at the interface between the encapsulating material 300 and the dimming structures 400 or the air, thus increasing the efficiency of the light output.
[0064] Referring to [Fig. 1D], in some embodiments, an insulating layer 500 may also be disposed on the substrate 100. In some embodiments, since the insulating layer 500 covers the substrate 100 and the conductive layer 102 is exposed where the light-emitting element 200 is not present, oxidation of the conductive layer can be prevented. Furthermore, the insulating layer 500 may have a white appearance, which serves to reflect light. Therefore, disposing of both the dimming structures 400 and the insulating layer 500 can further increase the transmission distance of the light emitted by the light-emitting elements 200 in the encapsulating material 300, and make the light output of the light-emitting module 10 more uniform.Therefore, uniformity of light output can be maintained without reducing or increasing the spacing between the LEDs. The insulating layer material can include epoxy resin, silicone resin, urethane resin, oxetane resin, acrylic adhesive, polycarbonate, or polyimide. Other suitable white reflective materials can be added to the insulating layer.
[0065] Continuing with reference to [Fig. 1D], in some embodiments, reflective layers 600 may be provided on the upper surface of the light-emitting elements 200. The reflective layers 600 can reflect light from the light-extracting surface (such as the upper surfaces of the light-emitting elements 200), increase the light transmission distance in the encapsulating material 300, and make the light output of the light-emitting module 10 more uniform. Although the LED chips have high directivity, the brightness of the light directly above the light-emitting elements 200 can be reduced by arranging the reflective layers 600. Consequently, the uniformity of the light output can be maintained without reducing or increasing the spacing between the LEDs.The 600 reflective layers can be specular metallic material, reflective sheets, white ink, or other suitable materials.
[0066] The relationship of the geometric dimensions between the dimming structures 400 and other elements of the light-emitting module 10 will be described in detail below. As shown in [Fig. 1B], in some embodiments, each dimming structure 400 has an external diameter D, and the external diameter D, the encapsulation thickness H, and the maximum dimming thickness h satisfy the following relationship: 0 < (H + h) / D < 1. In some embodiments, the distance P between neighboring light-emitting elements 200 and the external diameter D of each dimming structure 400 satisfy the following relationship: 0 < D / P < 1. In some In embodiments, the width W of the light-emitting elements 200 is less than the external diameter D of each dimming structure 400.
[0067] The present invention does not specifically limit the shape of the dimming structures 400 in a vertical cross-section with respect to the substrate 100, provided that the dimming structures 400 include parts with different thicknesses. For example, in some embodiments, as shown in Figures IA to 1D, the surface of each dimming structure 400 is a curved surface with a gradient slope. The position of such a dimming structure 400 having the maximum dimming thickness h can overlap each light-emitting element 200 in the normal direction of the substrate 100. In some embodiments, the shape of the aforementioned curved surface corresponds to the quadratic function: y = ax² + bx + c, where x is the position in the direction parallel to the substrate, y is the position in the direction perpendicular to the substrate, and a < 0.In some embodiments, the absolute value Ici of the constant term of the quadratic function is equal to the maximum gradation thickness h.
[0068] Although the dimming structures 400 are arranged on the upper surface of the encapsulating material 300 in the above embodiments, the present invention is not limited thereto. Figure 2A is a three-dimensional diagram of a light-emitting module 20 according to certain embodiments of the present invention, and Figure 2B is a cross-sectional view corresponding to line BB' of Figure 2A. As shown in Figures 2A and 2B, each of the dimming structures 400, having a curved surface with a gradual slope, can be integrated into the encapsulating material 300. Consequently, the thickness of the light-emitting module 20 can be reduced.
[0069] In the embodiment of [Fig. 2B], the relationship of the geometric dimensions between the dimming structures 400 and other elements of the light-emitting module 20 is similar to that described in [Fig. 1B], and the latter is omitted here for the sake of brevity. The shape of the curved surface of each of the dimming structures 400 integrated into the encapsulation material 300 also corresponds to the quadratic function: y = ax² + bx + c, where x is the position in the direction parallel to the substrate, and y is the position in the direction perpendicular to the substrate, and a > 0. In some embodiments, the absolute value Ici of the constant term of the quadratic function is equal to the maximum dimming thickness h.
[0070] In certain other embodiments of the present invention, as shown in Figures 3A to 3C, the dimming structure 400 of a light-emitting module 30 comprises a main dimming portion 410 and a plurality of dimming sub-portions 420 surrounding the main dimming portion 410. The The main dimming section 410 and the dimming sub-sections 420 are used to increase the distance over which the light emitted by the light-emitting element 200 travels within the encapsulation material 300, thereby making the light output of the light-emitting module 30 more uniform. The main dimming section 410 has a maximum dimming thickness hl, and the dimming sub-sections 420 arranged around the main dimming section 410 may have a thickness h2 less than the maximum dimming thickness hl. As shown in Figures 3B and 3C, the encapsulation thickness H and the maximum gradation thickness hl satisfy the following relationship: 0.01 < hl / H < 1. In some other embodiments, the encapsulation thickness H and the maximum gradation thickness hl satisfy the following relationship: 0.1 < hl / H < 0.25.
[0071] It must be understood that [Fig.3B] is a cross-sectional view corresponding to line BB' of [Fig.3A], and that [Fig.3C] is a cross-sectional view corresponding to line CC of [Fig.3A].
[0072] The grading sub-parts 420 may include internal grading sub-parts 422 in contact with the main grading part 410, for example two internal grading sub-parts 422 in contact with the main grading part 410 in [Fig. 3B]. As shown in Figures 3A and 3B, the internal grading sub-parts 422 and the main grading part 410 together form a stepped profile in cross-sectional view (for example, in [Fig. 3B]).
[0073] The gradation sub-parts 420 may also include external gradation sub-parts 424 separated from the main gradation part 410, for example, two external gradation sub-parts 424 separated from the main gradation part 410 in [Fig. 3C]. As shown in Figures 3A and 3C, there are intervals of different sizes between each of the external gradation sub-parts 424 and the main gradation part 410, thus obtaining a gradual gradation effect.
[0074] It should be understood that, although [Fig. 3C] shows only two internal dimming sub-parts 422 and two external dimming sub-parts 424 arranged opposite the main dimming part 410, the present invention does not limit the position of the dimming sub-parts 420 around the main dimming part 410 and their distance from the main dimming part 410. The light-emitting module 30 can include dimming sub-parts 420 with various configurations according to the design requirements.
[0075] As shown in Figures 3A to 3C, the 400 gradation structure can be located above the light-emitting element 200. In some embodiments, the position of the dimming structures 400 having the dimming thickness maximum hl overlaps the light-emitting element 200 in the normal direction of the substrate 100.
[0076] The relationship of the geometric dimensions between the dimming structures 400 and other elements of the light-emitting module 30 will be described in detail below. As shown in Figures 3B and 3C, in some embodiments, the main dimming part 410 of the dimming structure 400 has an external diameter Dl, and the external diameter Dl, the encapsulation thickness H, and the maximum dimming thickness h satisfy the following relationship: 0 < (H + h) / Dl < 1. In some embodiments, the distance P between neighboring light-emitting elements 200 (not shown in Figures 3B and 3C) and the external diameter Dl of the main dimming part 410 satisfy the following relationship: 0 < Dl / P < 1. In some embodiments, the external diameter Dl of the main dimming part 410 is greater than the width W of the light-emitting element 200.
[0077] Figure 4A is a three-dimensional diagram of a light-emitting module 40 according to certain embodiments of the present invention, Figure 4B is a cross-sectional view corresponding to line BB' of Figure 4A, and Figure 4C is a cross-sectional view corresponding to line CC of Figure 4A. As shown in Figures 4A to 4C, the dimming structure 400, comprising the main dimming part 410 and the dimming sub-parts 420, can also be integrated into the encapsulation material 300. Consequently, the thickness of the light-emitting module 40 can be reduced.
[0078] In the embodiments of Figures 4B and 4C, the relationship of the geometric dimensions between the dimming structure 400 and other elements of the light-emitting module 40 is similar to that described in Figures 3B and 3C, and the description thereof is omitted here for the sake of brevity.
[0079] The following will illustrate the excellent effects resulting from the use of the dimming structures of the present invention with the light emission images generated by the light-emitting module during actual tests. Due to the high directivity of the light-emitting diode chips, in conventional light-emitting devices, the brightness of the light directly above the LED chips is relatively high, such that the light output of the light-emitting devices is uneven. As shown in [Fig. 5A], in the light emission image of a conventional light-emitting module, a regular checkerboard-shaped irregularity (mura) appears. By using dimming structures having parts with different thicknesses in the light-emitting module, as shown in [Fig.5B], a light emission image with uniform brightness can be generated, and no irregularity (mura) is generated in it.
[0080] The present invention relates to a light-emitting module that can be applied to the backlighting of a display device, various light-emitting devices, and the like. The light-emitting module comprises dimming structures, each of which is located above one of the light-emitting elements. The dimming structures have the effect of partially transmitting and partially reflecting light. Since the dimming structures of the present invention have portions of varying thicknesses, they can be used to adjust the brightness of the light above the light-emitting elements, so that the overall light output of the light-emitting module is more uniform.Therefore, the light-emitting module of the present invention exhibits excellent brightness and uniformity, and can reduce the use of light-emitting diodes, thus reducing manufacturing costs.
[0081] The foregoing describes features of several embodiments so that those skilled in the art may better understand aspects of the present invention. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other methods and structures to achieve the same objectives and / or obtain the same advantages of the embodiments presented herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the scope of the present invention, and that they can make various changes, substitutions, and modifications without departing from the scope of the present invention.
Claims
Demands
1. Light-emitting module (10; 20; 30; 40), characterized in that it comprises: a substrate (100); light-emitting elements (200) arranged on the substrate (100); an encapsulation material (300) covering the light-emitting elements (200) and the substrate (100), the encapsulation material (300) having an encapsulation height H; and dimming structures (400) arranged on the encapsulation material (300) or integrated into the encapsulation material (300), the dimming structures (400) having a maximum dimming thickness h, the encapsulation thickness H and the maximum dimming thickness h satisfying the following relationship: 0.01 < h / H < 1, the dimming structures (400) comprising a reflective material and a resin material.
2. Light emitting module (10; 20) according to claim 1, characterized in that each of the dimming structures (400) is located above one of the light emitting elements (200).
3. Light-emitting module (10; 20) according to claim 1, characterized in that each of the dimming structures (400) has an external diameter D, and the external diameter D, the encapsulation thickness H and the maximum dimming thickness h satisfy the following relationship: 0 < (H + h) / D < 1.
4. Light-emitting module (10; 20) according to claim 1, characterized in that a spacing P between neighboring light-emitting elements (200) and an external diameter D of each of the dimming structures (400) satisfy the following relationship: 0 < D / P < 1.
5. Light emitting module (10; 20) according to claim 1, characterized in that a thickness W of the light emitting elements (200) is less than an external diameter D of the dimming structures (400).
6. Light-emitting module (10; 20) according to claim 1, characterized in that the encapsulation thickness H and the thickness of maximum gradation h satisfy the following relation: 0.1 < h / H < 0.
25.
7. Light-emitting module (10; 20) according to claim 1, characterized in that a position of the dimming structures (400) with the maximum dimming thickness overlaps the light-emitting elements (200) in a direction normal to the substrate (100).
8. Light emitting module (10; 20) according to claim 1, characterized in that a surface of each of the dimming structures (400) is a curved surface with a gradient slope.
9. Light emitting module (10; 20) according to claim 8, characterized in that a position of maximum gradation thickness of each of the gradation structures (400) corresponds to the center of the curved surface.
10. Light-emitting module (10; 20) according to claim 8, characterized in that a shape of the curved surface corresponds to a quadratic function: y = ax2 + bx + c, where x is a position in a direction parallel to the substrate (100), and y is a position in a direction vertical to the substrate (100), and a < 0.
11. Light-emitting module (10; 20) according to claim 10, characterized in that an absolute value of a constant term (1 cl) of the quadratic function is equal to the maximum gradation thickness h.
12. Light emitting module (30; 40) according to claim 1, characterized in that each of the dimming structures (400) comprises: a main dimming part (410) having the maximum dimming thickness h; and a plurality of dimming sub-parts (420) arranged around the main dimming part (410) and having a thickness less than the maximum dimming thickness h.
13. Light emitting module (30; 40) according to claim 12, characterized in that the plurality of dimming subparts (420) comprises internal dimming subparts (422) in contact with the main dimming part (410), and the plurality of dimming subparts (420) and the main dimming part (410) together form a stepped profile in cross-sectional view.
14. Light emitting module (30; 40) according to claim 12, characterized in that the plurality of dimming sub-parts (420=) comprises external dimming sub-parts (424) separated from the main dimming part (410).
15. Light emitting module (30; 40) according to claim 12, characterized in that an external diameter of the main dimming part (410) is greater than a width of the light emitting elements (200).
16. Light emitting module (10; 20; 30; 40) according to claim 1, characterized in that a refractive index inside the dimming structures (400) is uniform.
17. Light emitting module (10; 20; 30; 40) according to claim 1, characterized in that the light emitting elements (200) comprise multiple light-emitting diode chips or multiple light-emitting diodes in chip package, CSP LEDs.
18. Light emitting module (10; 20; 30; 40) according to claim 1, characterized in that the substrate (100) comprises integrated circuit chips, and each of the integrated circuit chips controls the light emitting elements (200).
19. Light emitting module (10; 20; 30; 40) according to claim 1, characterized in that the dimming structures (400) comprise parts with different thicknesses.