Method for constructing a superimposed transistor device

Abstract

Title: Method for Implementing a Stacked Transistor Device. The invention relates to a device comprising two transistors (T1, T2) stacked along z, the first transistor (T1) comprising channels (41a) stacked along z and first source and drain contacts (60Sa, 60Sd), the second transistor (T2) comprising channels (41b) stacked along z and second source and drain contacts (60Sb, 60Db), the device being characterized in that the first source (respectively drain) contact and the second source (respectively drain) contact are distinct and isolated from each other by a first dielectric gate layer (31) and a second dielectric gate layer (35). The invention also relates to a method for manufacturing this device. Figure for the abstract: Fig. 34A

Description

Title of the invention: Method for implementing a superimposed transistor device. Technical field

[0001] The invention relates to the field of microelectronic technologies. It finds a particularly advantageous application in the manufacture of advanced CFET (Complementary Field-Effect Transistor) type devices comprising two co-integrated transistors, of type N and type P, with encapsulated gates. STATE OF THE ART

[0002] The evolution of transistor architecture has played a crucial role in the constant improvement of the performance of microelectronic devices and their continuous miniaturization.

[0003] The classic silicon-based MOSFET (“Metal-Oxide-Semiconductor Field-Effect Transistor”) architecture has been the foundation of the semiconductor industry.

[0004] To meet the increasing integration density requirements, this classic architecture subsequently gave way to other types of architectures better suited to the performance specified in technology nodes below 12 nm. The so-called "finFET" architecture, for example, makes it possible to meet the performance requirements set by the 7 nm and 5 nm technology nodes.

[0005] More recently, a gate-around (GAA) transistor architecture with stacked channels has emerged. This architecture addresses the challenges of the next technological nodes, particularly at 3 nm and below.

[0006] In CFET devices adopting this GAA transistor architecture, two N-type and P-type transistors with encapsulating gates and distinct stacked channel structures are conventionally juxtaposed.

[0007] In order to increase the integration density of microelectronic devices, other GAA architectures for CFETs have been developed. Document FR3090998 discloses an architecture based on the superposition of two N-type and P-type GAA transistors. This reduces the device's footprint in an integrated circuit. However, the process disclosed in this document remains complex to implement. The number of process steps is high. The cost of the process, which depends in particular on the number of steps required, is significant.

[0008] Controlled industrial manufacturing, meeting the required quality requirements and limiting process costs, is an important issue for the development of GAA CFET transistor technologies.

[0009] There is therefore a need for a manufacturing process for GAA CFET transistors with a limited manufacturing cost.

[0010] One objective of the invention is to meet this need by providing such a manufacturing process. Another objective of the invention is to provide a device with a GAA CFET architecture that can be reproduced more easily and with greater control. A further objective of the invention is to overcome, at least partially, the drawbacks of known processes and devices. SUMMARY

[0011] To achieve this objective, according to one embodiment, a microelectronic device is provided comprising at least two transistors superimposed along a principal direction z, comprising: - A first transistor of a first type, comprising: • at least two first channels stacked along the principal z-direction, each channel being based on a first semiconductor material, • a first source and a first drain based on said first semiconductor material, • a first source contact and a first drain contact connected respectively to said first source and said first drain, • a first grid, called the enveloping grid, completely surrounding at least one of the first channels, • a first dielectric grid layer separating each first channel from the first surrounding grid, - A second transistor of a second type, comprising: • at least two secondary channels stacked along the principal z-direction, each channel being based on a second semiconductor material, • a second source and a second drain based on said second semiconductor material, • a second source contact and a second drain contact connected respectively to said second source and said second drain, • a second, so-called enveloping grid, completely surrounding at least one of the second channels, • a second dielectric grid layer separating each second channel from the second surrounding grid.

[0012] Advantageously, the first source contact and one of the second source contact and the second drain contact are distinct and isolated from each other by the first grid dielectric layer and by the second grid dielectric layer.

[0013] Advantageously, the first drain contact and the other among the second source contact and the second drain contact are distinct and isolated from each other by said first grid dielectric layer and by said second grid dielectric layer.

[0014] In this architecture, the first and second dielectric grid layers advantageously have at least two functions: the insulation of the first and second channels from the first and second grids, and the insulation of the first and second contacts from each other.

[0015] This architecture is therefore designed by minimizing the number of distinct elements. Since each distinct element typically requires at least one manufacturing step, this makes it possible to consider a manufacturing process for this device architecture comprising a limited number of steps.

[0016] Another aspect of the invention relates to a method for manufacturing such a microelectronic device, comprising the following steps: - To provide on a substrate a first stack and a second stack superimposed along the z direction, said first stack comprising a plurality of first layers of a first material, alternating with a plurality of second layers of a second material, said second stack comprising a plurality of third layers of a third material, alternating with a plurality of fourth layers of a fourth material, said first and second stacks being separated by a dielectric layer, - To form, in the first and second superimposed stacks, initial openings defining initial patterns, - To form a sacrificial grid straddling the first motifs and partly within the first openings, - To form second openings in the initial patterns, defining further second patterns on either side of the sacrificial grid, - To form a first sacrificial layer in the second openings, on the flanks of the second layers of the first stack, - To form a second sacrificial layer on top of the first sacrificial layer and on the sides of the fourth layers of the second stack, leaving an access space to the first sacrificial layer, - Remove the first sacrificial layer, starting from the access space, while retaining the second sacrificial layer, so as to form the first cavities opening onto the sides of the second layers of the first stack, Remove the second material from the second layers selectively from the first material of the first layers, so as to form second spaces, Forming a first dielectric grid layer in the second spaces on exposed parts of the first material of the first layers, and in the first cavities on exposed parts of the second sacrificial layer, Deposit a layer based on a first semiconductor material in the second spaces, on the first dielectric grid layer, so as to form: • the first channels of the first transistor based on the first semiconductor material, directly above the sacrificial gate, • a first source and a first drain of the first transistor based on the first semiconductor material, on either side of the first channels of the first transistor, Fill the initial cavities with a first electrically conductive material to form the first source and drain contacts of the first transistor, Remove the second sacrificial layer, so as to form second cavities opening onto the sides of the fourth layers of the second stack, Remove the fourth material from the fourth layers selectively from the third material of the third layers, starting from the second cavities, so as to form fourth spaces, Forming a second dielectric grid layer in the fourth spaces on exposed parts of the third material of the third layers, and in the second cavities on the first dielectric grid layer, Deposit a layer based on a second semiconductor material in the fourth spaces, on the second dielectric grid layer, so as to form: • the second channels of the second transistor based on the second semiconductor material, directly above the sacrificial gate, • a second source and a second drain of the second transistor based on the second semiconductor material, on either side of the second channels of the second transistor, - Fill the second cavities with a second electrically conductive material to form second source and drain contacts for the second transistor, - Remove the sacrificial grid to create third openings, - From the third openings, remove the first and third layers to create first and third spaces respectively. - Fill the first and third spaces, to form respectively the first and second surrounding grids of the first and second transistors.

[0017] In this process, the first transistor is formed from the first stack and the second transistor is formed from the second stack. One principle of the process according to the invention consists of selectively replacing certain layers of the initial stacks, here the first and third layers, to typically form two superimposed gates surrounding layers based on a semiconductor material forming the transistor channels, here the second and fourth layers. The advantages mentioned above for the device apply mutatis mutandis to the process according to the invention. In particular, the number of steps is reduced compared to known processes.

[0018] According to one possibility, the second and fourth layers are subsequently replaced by one or more semiconductor materials to form the transistor channels. In this case, the initial stacks do not include the semiconductor materials forming the transistor channels. The subsequent deposition of the semiconductor materials aims to better preserve the semiconductor materials. According to a preferred possibility, the semiconductor materials of the first and second channels are based on a two-dimensional (2D) material selected from the MX2 transition metal dichalcogenides, with M taken from molybdenum (Mo) or tungsten (W), and X taken from sulfur (S) or selenium (Se). The process makes it possible, in particular, to introduce layers of 2D material at the end of the process, after the stack has been structured and, in particular, after the formation of the spacers. This advantageously limits the risk of degradation of the 2D material during the process.The 2D material is not exposed at all stages of the manufacturing process. This preserves the 2D material.

[0019] Such a late introduction of the 2D material during the manufacturing process also allows the use of standard microelectronic technologies for stack formation and structuring. It is not necessary to modify or adapt the standard technological structuring steps to the constraints of using the 2D material. The process costs are thus advantageously limited. The process can be more easily implemented in existing production lines.

[0020] The other objects, features and advantages of the present invention will become apparent from an examination of the following description and accompanying drawings. It is understood that other advantages may be incorporated. BRIEF DESCRIPTION OF THE FIGURES

[0021] [Fig.lA][Fig.2A][Fig.3A][Fig.4][Fig.5][Fig.6][Fig.7][Fig.8][Fig.9][Fig.l0][Fig.ll][ Fig.12][Fig.13][Fig.14][Fig.15][Fig.16][Fig.17][Fig.18][Fig.19][Fig.20][Fig.21][Fig.22][Fig.23][Fig.24A] Figures IA, 2A, 3A, 4, ..., 23 and 24A schematically illustrate, according to cross-sections xz, the manufacturing steps of a GAA CFET transistor device, common to the first and second embodiments of the present invention.

[0022] [Fig.1B][Fig.2B][Fig.3B][Fig.24B] Figures IB, 2B, 3B and 24B schematically illustrate, according to transverse sections yz indicated on the corresponding figures nA, the same manufacturing steps of the device as those represented in figures nA (n=1, 2, 3, 24) respectively.

[0023] [Fig.25A][Fig.26A][Fig.27A] Figures nA (n=25...27) schematically illustrate according to cross-sections xz the manufacturing steps of a GAA CFET transistor device which follow the common steps shown in figures IA, 2A, 3A, 4, ..., 23 and 24A, according to a first embodiment of the present invention.

[0024] [Fig.25B][Fig.26B][Fig.27B] Figures nB (n=25...27) schematically illustrate according to transverse sections yz indicated on the corresponding figures nA, the same manufacturing steps of the device as those represented in figures nA (n=25.. .27) respectively, according to a first embodiment of the present invention.

[0025] [Fig.28A][Fig.29A][Fig.30A][Fig.31A][Fig.32A][Fig.33A][Fig.34A] Figures nA (n=28...34) schematically illustrate, according to cross-sections xz, the manufacturing steps of a GAA CFET transistor device which follow the common steps shown in figures IA, 2A, 3A, 4, ..., 23 and 24A, according to a second embodiment of the present invention.

[0026] [Fig.28B][Fig.29B][Fig.30B][Fig.31B][Fig.32B][Fig.33B][Fig.34B] Figures nB (n=28...34) schematically illustrate, according to transverse sections yz indicated on the corresponding figures nA, the same manufacturing steps of the device as those shown in figures nA (n=28...34) respectively, according to a second embodiment of the present invention.

[0027] In the cross-sectional figures, cutting planes are indicated (A-A', B-B', ..., M-M') with cross-references to the cutting planes of the corresponding figures. The drawings are given by way of example and are not limiting of the invention. They constitute schematic representations of principle intended to These diagrams facilitate understanding of the invention and are not necessarily to scale with practical applications. In particular, in the schematic diagrams, the thicknesses and / or dimensions of the various layers, patterns, and reliefs are not representative of reality. For clarity, all alphanumeric references are not systematically repeated from one figure to another. It is understood that elements already described and referenced, when reproduced in another figure, typically bear the same alphanumeric references, even if these are not explicitly stated. A person skilled in the art will readily identify the same element reproduced in different figures. DETAILED DESCRIPTION

[0028] Before proceeding to a detailed review of embodiments of the invention, optional features that may be used in combination or alternatively are listed below:

[0029] According to a first embodiment, the first source contact and the second source contact are distinct and isolated from each other by the first grid dielectric layer and by the second grid dielectric layer, and the first drain contact and the second drain contact are distinct and isolated from each other by said first grid dielectric layer and by said second grid dielectric layer.

[0030] According to a second embodiment, the first source contact and the second drain contact are distinct and isolated from each other by the first grid dielectric layer and by the second grid dielectric layer, and the first drain contact and the second source contact are distinct and isolated from each other by said first grid dielectric layer and by said second grid dielectric layer.

[0031] According to one example, the first grid dielectric layer and the second grid dielectric layer are based on the same material, thus forming a continuous dielectric layer between the first and second source contacts and between the first and second drain contacts.

[0032] According to one example, the first semiconductor material has a first type of conductivity, for example of type N, and the second semiconductor material has a second type of conductivity different from the first type of conductivity, for example of type P.

[0033] According to one example, the first semiconductor material and / or the second semiconductor material are based on a two-dimensional (2D) material chosen from the MX2 transition metal dichal-cogenides with M taken from molybdenum (Mo) or tungsten (W), and X taken from sulfur (S), selenium (Se) or tellurium (Te).

[0034]

[0035]

[0036]

[0037]

[0038]

[0039]

[0040]

[0041]

[0042] According to another example, the first semiconductor material and / or the second semiconductor material are based on a semiconductor oxide, for example based on IGZO (Indium Gallium Zinc Oxide), In2O3, IWO (tungsten doped indium oxide), ITO (Indium Tin Oxide), IAZO (Indium Aluminium Zinc Oxide), InGaZnO, InGaO, InZnO or an amorphous semiconductor oxide. According to another example, the first semiconductor material and / or the second semiconductor material are based on graphene, hexagonal boron nitride "h-BN", phosphorene. According to one example, the first and second surrounding gates form a single gate common to the first and second transistors. According to an alternative example, the first and second enveloping grids are distinct. According to one example, the first gate completely surrounds each first channel of the first transistor, and the second gate completely surrounds each second channel of the second transistor. According to one example, the process further includes the following optional steps: - Forming initial spacers between the first enclosing grid and the first source and drain contacts, Form second spacers between the second enclosing grid and the second source and drain contacts According to one example, the formation of the first and second spacers includes the following steps: - Preferably, form spacers bordering the sacrificial grid and based on the initial motifs, - Before the formation of the first sacrificial layer, partially remove, from the second openings, the first material of the first layers selectively to the second material of the second layers, so as to form first spacer cavities, preferably directly above the spacers, - Fill the first spacer cavities with a first dielectric material to form the first spacers, - Before the formation of the second sacrificial layer, partially remove, from the second openings, the third material of the third layers selectively to the fourth material of the fourth layers, so as to form second spacer cavities, preferably directly above the spacers, - Fill the second spacer cavities with a second dielectric material to form the second spacers. The first and second spacers are typically called internal spacers.

[0043]

[0044]

[0045]

[0046]

[0047]

[0048]

[0049]

[0050]

[0051]

[0052] According to one example, the first and second dielectric materials are identical. According to an example, the first material of the first layers is identical to the third material of the third layers. In one example, the first and second spacers are formed simultaneously. According to one example, the sacrificial grid comprises a first part and a second distinct parts. For example, removing the sacrificial grid includes: - a first withdrawal of the first sacrificial gate portion, configured to form a third opening leading only to the flanks of the first layers, on only one side of the first motif, followed by a withdrawal of the first layers from said third opening to form the first gaps, and a filling of said first gaps to form the first encapsulating gate of the first transistor, and - a second withdrawal of the second sacrificial gate part, configured to form a third opening leading only to flanks of the third layers, on only one second side of the first pattern, followed by a withdrawal of the third layers from said third opening to form the third spaces, and a filling of said third spaces to form the second enclosing gate of the second transistor. According to one example, the second enveloping grid is formed before the first enveloping grid. According to one example, the first withdrawal includes the formation of an insulating portion on the flanks of the second stack at the level of the first side of the first pattern, before filling the first spaces to form the first enveloping grid. According to one example, the second withdrawal includes the formation of a second portion of insulation on the flanks of the first stack at the level of the second side of the first pattern, before filling the third spaces to form the second enveloping grid. According to one example, the process includes, before the removal of the sacrificial grid, a separation of the sacrificial grid into a first and a second distinct part, said first and second parts of sacrificial grid extending respectively over the first and second sides of the first motif, the first removal being carried out on the first part of grid and the second removal being carried out on the second part of grid. According to one example, before the formation of the sacrificial grid, a hard mask is formed on the first patterns, and the separation of the sacrificial grid is carried out by mechano-chemical polishing with a stop on said hard mask.

[0053] The invention relates generally to a GAA transistor microelectronic device and a manufacturing method. Such a microelectronic device may have a "GAA stacked nanosheet" architecture, i.e., with stacked nanosheets and a fully enclosing gate. A stacked nanowire architecture with a fully enclosing gate is also possible.

[0054] Nanowires or nanosheets typically each comprise a conduction channel of a transistor. These channels are stacked along a z-direction. This means that they each occupy a specific elevation level along the z-direction. A level can be defined between two planes perpendicular to the z-direction.

[0055] Advantageously, the process according to the invention can be implemented for the production of GAA MOS transistors for the 5 nm and sub-5 nm technology nodes.

[0056] A microelectronic device comprising GAA stacked channel transistors can be advantageously integrated into logic systems with 3D architectures. These transistors can, in particular, be combined with other structural or functional elements to design complex systems.

[0057] A particular aspect of the invention relates to the implementation of 2D materials to fabricate the nanowires or nanosheets of the device. These 2D materials exhibit semiconductor properties, notably through the presence of an electronic gap.

[0058] 2D materials typically correspond to compounds with a lamellar structure made up of two-dimensional sheets stacked along the c-axis. The atomic bonds within each sheet are strong and covalent. The bonds between sheets are much weaker and of the Van der Waals type. These two-dimensional sheets are also called monolayers.

[0059] In the context of the present invention, the monolayers are preferably MX2 type semiconductor monolayers where M is molybdenum (Mo) or tungsten (W) and X is sulfur (S) or selenium (Se). Each monolayer is composed of a plane of metal cations M sandwiched between two planes of anions X. A monolayer thus typically comprises three atomic planes: the transition metal atoms (Mo or W) form a plane sandwiched between two chalcogen planes (S, Se, or Te, for example). Each transition metal atom is bonded to six chalcogen atoms. These anions are in prismatic trigonal coordination with respect to the metal atoms. The MX2 transition metal dichalcogenide monolayers exhibit a hexagonal atomic lattice.

[0060] The monolayers of transition metal dichalcogenides MX2 are preferably based on molybdenum disulfide MoS2, MoSe2, MoTe2, WS2, WSe2.

[0061] An alternative possibility involves the use of semiconductor oxides to fabricate the nanowires or nanosheets of the device, for example IWO, IGZO, ITO, InGaZnO, InGaO, InZnO, In2O3, IAZO. Another possibility involves the use of work of graphene, hexagonal boron nitride "h-BN", phosphorene (also known as "Black Phosphorous" BP), notably in monolayer form.

[0062] It is specified that, within the framework of the present invention, the terms "on", "overcomes", "covers", "underlying", "opposite" and their equivalents do not necessarily mean "in contact with". Thus, for example, the deposit or application of a first layer on a second layer does not necessarily mean that the two layers are directly in contact with each other, but means that the first layer at least partially covers the second layer by being either directly in contact with it, or by being separated from it by at least one other layer or at least one other element.

[0063] A substrate, film, or layer "based" on a material A is understood to mean a substrate, film, or layer comprising only that material A or that material A and possibly other materials, for example, dopant elements or alloying elements. Thus, a silicon nitride-based spacer (SiN) may, for example, comprise non-stoichiometric silicon nitride (SiN), or stoichiometric silicon nitride (Si3N4), or even silicon oxynitride (SiON).

[0064] The term "dielectric" describes a material whose electrical conductivity is sufficiently low in the given application to serve as an insulator. In the present invention, a dielectric material preferably has a dielectric constant of less than 20.

[0065] Several embodiments of the invention implementing successive steps of the manufacturing process are described below. Unless explicitly stated, the adjective "successive" does not necessarily imply, although this is generally preferred, that the steps follow each other immediately; intermediate steps may separate them.

[0066] Furthermore, the term "step" refers to the execution of a part of the process, and can designate a set of sub-steps.

[0067] Furthermore, the term "step" does not necessarily mean that the actions carried out during a step are simultaneous or immediately successive. Certain actions of a first step may, in particular, be followed by actions related to a different step, and other actions from the first step may be repeated later. Thus, the term "step" does not necessarily imply unitary actions that are inseparable in time and in the sequence of phases of the process.

[0068] The term "selective etching with respect to" or "etching exhibiting selectivity with respect to" means an etching configured to remove a material A or a layer A with respect to a material B or a layer B, and having an etching speed of material A greater than the etching speed of material B. The selectivity is the ratio between the etching speed of material A and the etching speed of material B. It is denoted SA:B. A selectivity SA:b of 10:1 means that the etching speed of material A is 10 times greater than the etching speed of material B.

[0069] The various patterns formed during the manufacturing steps typically have a structure designed to evolve during the process steps. Thus, the patterns may include sacrificial layers of the initial stacks, layers based on 2D material or semiconductor oxide, and continuous or discontinuous dielectric layers. The various patterns are designed to form, at the end of the process, "transistor patterns," each comprising at least one conduction channel, a source and a drain on either side of the channel, a gate surrounding said channel, a dielectric barrier separating the gate from the channel, and the drain and source contacts, respectively, from each other. The assignment of the first, second, third, and fourth layers in the initial stacks may be reversed or swapped.

[0070] A preferably orthonormal coordinate system, comprising the x, y, z axes, is shown in the attached figures.

[0071] In this patent application, the term thickness will preferably be used for a layer or film, and height for a device or structure. Thickness is measured along a direction normal to the principal extension plane of the layer or film. Thus, a surface layer of silicon (topSi) typically has a thickness along the z-axis. A grid pattern formed on such a surface layer has a height along the z-axis. The relative terms "on," "overtop," "under," and "below" refer to positions taken along the z-direction. A "lateral" dimension corresponds to a dimension along a direction in the xy-plane. A "lateral" or "lateral" extension is understood to be an extension along one or more directions in the xy-plane. The flanks here typically extend along a yz-plane.

[0072] An element located "in line with" or "directly above" another element means that these two elements are both located on the same line perpendicular to a plane in which extends mainly a lower or upper face of a substrate, that is to say on the same line oriented vertically on the cross-sectional figures.

[0073] The terms "approximately", "around", "in the order of" mean within 10%, and preferably within 5%. Furthermore, the terms "between ... and ..." and equivalents mean that the bounds are inclusive, unless otherwise stated.

[0074] The following description presents examples of implementation of the method according to the invention in the context of developing a complex 3D device. The scope of this description is obviously not limiting to the invention.

[0075] Figures IA, IB, 2A, 2B, 3A, 3B, 4 to 23, 24A, 24B, 25A, 25B, 26A, 26B, 27A, 27B schematically illustrate manufacturing steps of a CFET device Superimposed GAA transistors having source and drain contacts insulated by at least one gate dielectric layer, according to a first embodiment of the present invention. Figures nA (n=l, 2, 3, 24, 25, 26, 27) and Figures 4 to 23 correspond to first cross-sections along an xz plane, each illustrating a different step of the manufacturing process. Figures nB (n=l, 2, 3, 24, 25, 26, 27) correspond to second cross-sections along a yz plane, each illustrating the same step as the corresponding Figure nA.

[0076] As illustrated in Figures IA, IB, a first step consists of creating on a substrate S a superposition along the z-direction of a first stack El comprising alternating semiconductor layers 1, 2 and a second stack E2 comprising alternating semiconductor layers 3, 4, the stacks El, E2 being separated by an insulating layer 201. The substrate S can be a substrate of the type SOI (Silicon On Insulator), GeOI (Germanium On Insulator) or SGOI (Silicon-Germanium On Insulator). These known substrates comprise, according to the terminology commonly used by those skilled in the art, a thick silicon SI layer called "Si bulk", a silicon oxide S2 layer called "BOX" (Burn Oxide) and a thin surface layer, respectively based on silicon, germanium or silicon-germanium.This thin surface layer can advantageously correspond to the first layer 1 of the first EL stack. Alternatively, the substrate S can be a bulk substrate "Si bulk".

[0077] The first stack E1 comprises, by example, an alternation of first layers 1 of silicon-germanium (SiGe) and second layers 2 of silicon (Si). Advantageously, the second stack E2 also comprises an alternation of third layers 3 of silicon-germanium (SiGe) and fourth layers 4 of silicon (Si). Generally, the material pair forming the third layers 3 and the fourth layers 4 of the second stack E2 may be different from the material pair forming the first layers 1 and the second layers 2 of the first stack E1. In what follows, the same material pair forming layers 1, 2 and layers 3, 4 is adopted.

[0078] The concentration of Ge in the SiGe alloy can be, for example, 20%, 30%, or 45%. This germanium concentration is chosen to ensure good selectivity of the SiGe etching with respect to Si during the selective etching steps. The higher the Ge concentration, the greater the selectivity for Si during the subsequent SiGe removal.

[0079] The first stack E1 is typically formed on a first substrate and the second stack E2 is typically formed separately on a second substrate. The alternation of layers 1, 2 and 3, 4 in the respective stacks E1, E2 is advantageously formed by epitaxy of the SiGe 1, 3 and Si 2, 4 layers. This step of The formation of each El, E2 stack is inexpensive and well understood by those skilled in the art. The thicknesses of the Si and SiGe layers can typically be on the order of 10 nm, and more generally range from 5 nm to 20 nm, for example. As is known, in order to avoid the formation of structural defects, the maximum permissible thicknesses for the SiGe layers 1 and 3 depend, in particular, on the chosen Ge concentration.

[0080] An oxide deposit, for example based on SiO2, is preferably applied to each stack El, E2. The assembly and superposition of the two stacks El, E2 can then be carried out in a known manner by oxide-to-oxide transfer and bonding. After bonding, the first stack El is thus separated from the second stack E2 by a continuous insulating layer 201, the thickness of which can typically be between 10 nm and 100 nm.

[0081] In the example illustrated in Figures IA and IB, four layers 1 and 3 of SiGe are alternated with three epitaxial layers 2 and 4 of Si. This results in a Si / SiGe superlattice. The number of Si and SiGe layers can naturally be increased. This ultimately allows for an increase in the number of stacked channels per transistor in the final device.

[0082] Generally, the material(s) forming layers 1, 3 and the material(s) forming layers 2, 4 are chosen so that some can be selectively etched with respect to others, in particular the material(s) of layer 1 with respect to that of layer 2 or vice versa, and the material(s) of layer 3 with respect to that of layer 4 or vice versa. Thus, other material pairs are possible. While respecting this condition of selectivity for etching, the materials forming layers 1, 2, 3, 4 can be chosen from among dielectric materials (oxides and nitrides, for example), semiconductor materials, and metallic materials.

[0083] As illustrated in Figures 2A and 2B, a conventional lithography / etching step is performed to define the first 101M motifs and the first 100 apertures. The etching is anisotropic and z-directed. It is configured to etch all the stacks El, E2, here the two Si / SiGe superlattices separated by the insulating layer 201, over its entire height, stopping at the substrate S, here the BOX S2. It can be performed by plasma using HBr / O2 etching chemistry. The first 101M motifs can have a length Li along x between 10 nm and 500 nm. Preferably, they have a width Li along y between 10 nm and 120 nm, for example, on the order of 40 nm. This first structuring of the El, E2 stacks in the form of fins or "fins" according to the common Anglo-Saxon terminology, makes it possible to define a plurality of superimposed nanowires or nanosheets.

[0084] For the sake of clarity, the following figures iB (i=3, 24, ..., 34) illustrate only one "end" motif 10IM.

[0085] As illustrated in Figures 3A and 3B, sacrificial grids 150 are then formed on the "end" motifs 101M. The formation of these sacrificial grids 150 is typically carried out by deposition followed by lithography / etching. The formation of the sacrificial grids 150 is configured so that the sacrificial grids 150 straddle the "end" motifs 101M, as illustrated in [Fig. 3B]. The sacrificial grids 150 typically comprise an upper portion located on the "end" motif 101M, and lateral portions located on the lateral sides of the "end" motif 101M. The sacrificial grids 150 typically rest on the substrate S. At this stage, the sacrificial grids 150 are typically surmounted by an engraving mask 161, called a hard mask, implemented in the structuring of the sacrificial grids 150.Sacrificial grids 150 typically comprise, for example, a thin SiO2 oxide layer (thickness between 3 nm and 7 nm, for example) and a thick layer of polycrystalline silicon or amorphous silicon. The thin SiO2 oxide layer (not shown in the figures) can act as a stop layer during the etching of the polycrystalline silicon in the sacrificial grids 150. This thin SiO2 oxide layer is thus sandwiched between the sacrificial grids 150 and the "fin" motifs 101M. The hard mask 161 can be based on silicon dioxide (SiO2), silicon nitride (SiN), or a SiO2 / SiN bilayer.

[0086] As illustrated in [Fig. 4], spacers 170 are then formed on the yz-oriented flanks of the sacrificial grids 150. In general, in z-projection, these spacers form a continuous ring around each sacrificial grid 150, with a closed contour. In cross-section, however, along the xz plane illustrated in [Fig. 4], the spacer 170 has two opposing parts on each flank of the sacrificial grid 150. These two parts are generally referred to as the spacers 170, even though they can be considered as belonging to a single spacer. The spacers 170 typically extend to an upper face of the hard mask 161. The spacers 170 are typically based on silicon nitride (SiN) or a dielectric material with a low dielectric constant, for example, SiCO₃.

[0087] As illustrated in [Fig.5], after the formation of the spacers 170 by deposition / etching, the anisotropic etching along z is extended in order to define second motifs 102M, and second apertures 200. The etching is configured to etch all the stacks El, E2 over their entire height, stopping on the substrate S. It can be carried out by plasma using an HBr / O2 etching chemistry.

[0088] As illustrated in [Fig. 6], after the formation of the second openings 200, the first layers 1 and the third layers 3 are partially and selectively etched to the second layers 2 and the fourth layers 4 respectively, to the insulating layer 201, to the substrate S and to the spacers 170. The first layers 1 and the The third layers 3 are advantageously etched by the same etching process. The etching of the material of layers 1, 3 typically exhibits a selectivity of Si:2 (S3:4) relative to the material of layers 2, 4 of at least 5:1, preferably at least 10:1. This partial etching aims to form first and third spaces 10, 30 directly above the spacers 170 in the first and third layers 1, 3 respectively. This partial etching is typically time-locked. It exhibits isotropic characteristics and can be carried out wet or dry, starting from the second openings 200. Following this partial etching, central portions of layers 1, 3 are preserved under the sacrificial grids 150.

[0089] As illustrated in [Fig. 7], the first and third spaces 10, 30 are then filled with a dielectric material, for example with silicon nitride or a low permittivity dielectric, to form first and third internal spacers 101, 131. These "internal" spacers 101, 131 are integrated into the stacks El, E2, preferably directly above the spacers 170. They are in contact with the central parts of the layers 1, 3. The formation of the internal spacers 101, 131 typically occurs from the second openings 200.

[0090] As illustrated in [Fig.8], a dielectric layer 202, for example based on SiO2, is deposited on and between the second motifs 102M so as to fill the openings 200. This dielectric layer 202 is then planarized, typically by chemical-mechanical polishing CMP with stopping on the hard mask 161.

[0091] As illustrated in [Fig.9], the dielectric layer 202 is opened by etching so as to partially reform the second openings 200. The second openings 200 here define the location of the contacts of the two stacked transistors.

[0092] As illustrated in [Fig. 10], a conforming oxide layer 12 is preferably first deposited in the openings 200. The oxide layer 12 covers the sides and bottom of the second openings 200. A first sacrificial layer 13 is then deposited in the second openings 200 on top of the oxide layer 12, so as to fill the second openings 200. This first sacrificial layer 13 is typically based on polycrystalline silicon or amorphous silicon. The oxide layer 12 and the sacrificial layer 13 are then typically planarized by chemical-mechanical polishing (CMP) with a stop on the hard mask 161.

[0093] As illustrated in [Fig. 1 1], the first sacrificial layer 13 is then partially removed by wet etching to form an access space 400 located opposite the layers 3, 4 of the second stack. The etching is configured so that the remaining part of the first sacrificial layer 13 extends along z to the insulating layer 201. This wet etching can be based on a solution of ammonia salts TM AH (tetramethylammonium hydroxide) or TEAH (tetraethylammonium hydroxide).

[0094] As illustrated in [Fig. 12], a second sacrificial layer 14, for example based on SiO2, is formed in the access space 400, against the motif 102M and on the remaining portion of the first sacrificial layer 13. The formation of this second sacrificial layer 14 is typically achieved by deposition followed by etching. The second sacrificial layer 14 typically extends along the z-axis from the insulating layer 201 to the upper face of the hard mask 161.

[0095] As illustrated in [Fig. 13], the remaining portion of the first sacrificial layer 13 is then removed from the access space 400 by selective etching with respect to the second sacrificial layer 14, typically by wet etching. The exposed portion of the oxide layer 12 is also removed from the access space 400 to form first cavities 400a opening onto the flanks of the second layers 2 of the first stack EL. The unexposed portion of the oxide layer 12, located between the second sacrificial layer 14 and the flanks of the second stack, is retained.

[0096] As illustrated in [Fig. 14], the second layers 2 of the first stack EL are then selectively etched onto the central portions of the first layers 1 and onto the internal spacers 101 of the first stack EL. The etching of the material of the second layers 2 typically exhibits a selectivity S2:1 with respect to the material of the first layers 1 of at least 5:1, preferably at least 10:1. This total etching can be stopped at time t, possibly after an over-etching time intended to ensure the complete removal of the second layers 2. This total etching exhibits isotropic characteristics and can be carried out wet or dry, starting from the first cavities 400a. Following this etching, the second layers 2 are completely removed to form second spaces 22. The central portions of the first layers 1 are held in place by the sacrificial grids 150.

[0097] As illustrated in [Fig. 15], a first gate dielectric layer 31 is then deposited in the second spaces 22 from the first cavities 400a. This first gate dielectric layer 31 is typically based on a high permittivity material, for example, based on HfO2. The first gate dielectric layer 31 is intended to form at least part of the gate dielectric layer between the channels of the first transistor and the first encapsulating gate. It can be formed by CVD (Chemical Vapor Deposition), MOCVD (Metal-Organic Chemical Vapor Deposition) with organometallic precursors, or ALD (Atomic Layer Deposition).It thus covers at least the central parts of the first layers 1 and, in the first cavities 400a, the exposed faces of the second sacrificial layer 14 and the oxide layer 12. The first dielectric grid layer 31 typically has a . thickness between 1 nm and 5 nm.

[0098] As illustrated in [Fig. 16], a layer 40 based on a first semiconductor material is then deposited on the first dielectric gate layer 31 in the second spaces 22. The deposition of the first semiconductor material is configured here so that the layer 40 completely fills the second spaces 22. The portions of the layer 40 located in the second spaces 22 thus have a perfectly controlled thickness, close to the thickness of the initial second layers. This layer 40 is intended to form the channels 41a of the first transistor T1, directly above the sacrificial gate 150 and the central portions of the first layers 1. This layer 40 is also intended to form the sources 42a and the drains 43a of the first transistor T1 directly above the first internal spacers 101.

[0099] Layer 40 is also typically deposited outside the second spaces 22, on the flanks of the internal spacers 101. This improves contact re-establishment with the sources 42a and drains 43a of the first transistor TL. Layer 40 thus has horizontal portions in the second spaces 22, particularly between the remaining portions of the first layers 1, and vertical portions on the flanks of the first internal spacers 101. According to one possibility, the thickness of the vertical portions of layer 40 is greater than the thickness of the horizontal portions of layer 40. This reduces the contact resistance for the sources 42a and drains 43a of the first transistor TL. The sources 42a and drains 43a of the first transistor TL may include the horizontal portions directly above the internal spacers 101, and at least partially the vertical portions on the flanks of the internal spacers 101.

[0100] The first semiconductor material of layer 40 is advantageously a two-dimensional material taken from among the transition metal dichalcogenides, for example MoS2 for a first N-type transistor, and WSe2 or WS2 for a first P-type transistor. Such a 2D material can advantageously be deposited as a thin film comprising 1 to 10 atomic layers, preferably 1 to 5 atomic layers. The deposition of this 2D material can be carried out by CVD, MOCVD, or ALD. According to another possibility, the semiconductor material of layer 40 is a semiconductor oxide such as 1TTO (acronym for "Indium Tin Oxide"), IGZO (acronym for "Indium Zinc Oxide"), IWO (meaning "Tungsten-Doped Indium Oxide"), or In2O3.

[0101] According to a second, unillustrated embodiment, the layer 40 based on the first semiconductor material is deposited on the first dielectric gate layer 31 in the second spaces 22 without completely filling the second spaces 22. In this case, the portions of the layer 40 located in the second spaces 22 can be significantly thinner than the initial second layers. These horizontal portions These layers can have a thickness corresponding to only a few atomic layers, for example, between 1 and 5 atomic layers of the first semiconductor material. Reducing the thickness of layer 40 improves the electrostatic control of the first transistor and thus reduces the dimensions of the channels 41a of the first transistor Tl. The performance of the first transistor Tl can be improved. According to this second variant, a dielectric plug is then formed between the horizontal portions of layer 40 to fill the second gaps 22. This electrically isolates the channels 41a of the first transistor Tl from each other. This also improves the mechanical strength of the device and / or prevents deformation of the channels 41a of the first transistor Tl, for example, due to heating during operation. This dielectric plug can be formed by CVD or ALD deposition followed by isotropic etching along the z-axis, in a conventional manner.

[0102] As illustrated in [Fig. 17], the first cavities 400a can then be filled with one or more metallic materials to form the first source and drain contacts 60Sa, 60Da of the first TL transistors. These metallic materials are, for example, based on Ti, TiN, W, or other metals that ensure low contact resistance, such as Bi, Ni, Au, Sb, etc. A chemical-mechanical polishing (CMP) is typically performed to remove excess metal deposited on the 102M motifs.

[0103] As illustrated in [Fig. 18], an advantageous step is to form protective plugs 162 to protect the first source and drain contacts 60Sa, 60Da during subsequent fabrication steps of the second transistor. The protective plugs 162 can be based on silicon dioxide SiO2, silicon nitride SiN, or a SiO2 / SiN bilayer.

[0104] As illustrated in [Fig. 19], the oxide layer 12 and the second sacrificial layer 14 are then removed at least partially so as to define second cavities 400b opening onto the flanks of the fourth layers 4 of the second stack E2. According to one possibility, part of the oxide layer 12 and part of the second sacrificial layer 14 are retained at the level of the dielectric layer 201, as illustrated in [Fig. 19]. According to another possibility not illustrated, the oxide layer 12 and the second sacrificial layer 14 are completely removed.

[0105] As illustrated in [Fig. 20], the fourth layers 4 of the second stack E2 are then selectively etched into the central parts of the third layers 3 and the internal spacers 131. The etching of the material of the fourth layers 4 typically exhibits a selectivity S4:3 with respect to the material of the third layers 3 of at least 5:1, preferably at least 10:1. This total etching can be stopped at time t, possibly after an over-etching time intended to ensure the complete removal of the fourth layers 4. This total etching exhibits an isotropic character and can be carried out by wet or dry method, from the second cavities 400b. Following this engraving, the fourth layers 4 are completely removed to form fourth spaces 44. The central parts of the third layers 3 are held in place by sacrificial grids 150.

[0106] As illustrated in [Fig. 21], a second gate dielectric layer 35 is then deposited in the fourth spaces 44 from the second cavities 400b. This second gate dielectric layer 35 is typically based on a high permittivity material, for example, based on HfO2. The second gate dielectric layer 35 is intended to form the gate dielectric layer between the channels of the second transistor T2 and the second encapsulating gate. It can be formed by CVD, MOCVD, or ALD. It thus covers at least the central parts of the third layers 3 and the exposed part of the first gate dielectric layer 31, and preferably the spacers 170 and the internal spacers 131. The second gate dielectric layer 35 typically has a thickness of between 1 nm and 5 nm. It can be based on the same material forming the first gate dielectric layer 31.The first and second dielectric grid layers 31, 35 then form a continuous insulating layer over the upper part of the first source and drain contacts 60Sa, 60Da, opposite the second cavities 400b. Alternatively, the first and second dielectric grid layers 31, 35 are made of two different dielectric materials. In all cases, the first and second dielectric grid layers 31, 35 are in contact with each other at least at the upper part of the first source and drain contacts 60Sa, 60Da, opposite the second cavities 400b.

[0107] As illustrated in [Fig. 22], a layer 45 based on a second semiconductor material is then deposited on the second gate dielectric layer 35 in the fourth spaces 44 and in the second cavities 400b. As before, the deposition of the second semiconductor material is configured here so that the layer 45 completely fills the fourth spaces 44. The portions of the layer 45 located in the fourth spaces 44 thus have a perfectly controlled thickness, close to the thickness of the initial fourth layers. This layer 45 is intended to form the channels 41b of the second transistor T2 directly above the sacrificial gate 150 and the central portions of the third layers 3. This layer 45 is also intended to form the sources 42b and the drains 43b of the second transistor T2 directly above the spacers 170 and the internal spacers 131.

[0108] Layer 45 is also typically deposited outside the fourth spaces 44, on the flanks of the spacers 170 and the internal spacers 131. This improves the re-establishment of contact with the sources 42b and the drains 43b of the second transistor T2. Layer 45 thus has horizontal portions in the fourth spaces 44, particularly between the remaining portions of the third layers 3, and vertical portions on the flanks of the spacers 170 and the internal spacers 131. According to one possibility, the thickness of the vertical portions of layer 45 is greater than the thickness of the horizontal portions of layer 45. This reduces the contact resistance for the sources 42b and drains 43b of the second transistor T2. The sources 42b and drains 43b of the second transistor T2 may include the horizontal portions directly above the spacers 170 and the internal spacers 131, and at least partially the vertical portions on the flanks of the spacers 170 and the internal spacers 131.

[0109] The second semiconductor material of layer 45 is chosen so as to form a second transistor T2 having a conductivity of the opposite type to that of the first transistor TL. This second semiconductor material of layer 45 is also preferably a two-dimensional material taken from among the dichalcogenides of transition metals, MoS2 for example for a second N-type transistor, and WSe2 or WS2 for a second P-type transistor. According to another possibility, the second semiconductor material of layer 45 is a semiconductor oxide such as 1TTO (acronym for "Indium Tin Oxide"), 1TGZO (acronym for "Indium Zinc Oxide"), IWO (meaning "Tungsten-Doped Indium Oxide"), or In2O3 indium oxide.

[0110] The layer 45 based on the second semiconductor material can also be made according to the second variant described above.

[0111] As illustrated in [Fig. 23], the second cavities 400b can then be filled with one or more metallic materials to form the second source and drain contacts 60Sb, 60Db of the second transistor T2. These metallic materials are, for example, based on Ti, TiN, W, or other metals that ensure low contact resistance, such as Bi, Ni, Au, Sb, etc. A chemical-mechanical polishing (CMP) is typically performed to remove excess metal deposited on the 102M motifs.

[0112] At this stage of the process, the CFET device comprises superimposed or stacked z-shaped transistors T1, T2. The channels 41a, 41b of each transistor T1, T2 have been formed and are also stacked z-shaped. The source contacts 60Sa, 60Sb and drain contacts 60Da, 60Db of each transistor T1, T2 have also been formed. The first source contact 60Sa is advantageously isolated from the second source contact 60Sb by the combination of the first and second gate dielectric layers 31, 35. The first drain contact 60Da is advantageously isolated from the second drain contact 60Db by the combination of the first and second gate dielectric layers 31, 35.

[0113] In order to obtain stacked GAA transistors, the steps described below concern the realization of the functional grids surrounding the transistors, replacing the sacrificial grid and layers 1 and 3, according to two embodiments.

[0114] Figures 24A, 24B to 27A, 27B schematically illustrate, according to the first embodiment of the present invention, the realization of a common gate for the transistors T1, T2 of the CFET device.

[0115] According to this first embodiment, as illustrated in Figures 24A, 24B, a mask 203 is formed to protect the first source and drain contacts 60Sa, 60Da and the second source and drain contacts 60Sb, 60Db. This mask 203 is open to expose the hard mask 161 above the sacrificial grid. This mask 203 can conventionally be made of a dielectric material, for example, SiN or SiO2.

[0116] According to the first embodiment, as illustrated in Figures 25A, 25B, the hard mask 161 is first removed, and then the sacrificial grid 150 is also removed. This latter removal can be carried out by wet etching with a stop on the thin stop layer based on SiO2 or another dielectric. This wet etching typically exhibits high selectivity with respect to the stop layer and / or the spacers 170. This wet etching can be based on a solution of TM AH (tetramethylammonium hydroxide) or TEAH (tetraethylammonium hydroxide). This removal of the sacrificial grid 150 makes it possible to form a main gap 601 and third openings 600G, 600D opening onto the central parts of the first layers 1 and the third layers 3 ([Fig. 25B]).

[0117] As illustrated in Figures 26A, 26B, the central portions of the first layers 1 and the third layers 3 are then fully etched selectively at the internal spacers 101, 131, the insulating layer 201, the first dielectric grid layer 31, and the second dielectric grid layer 35 from the third openings 600G, 600D. One or more etches may be carried out, depending on whether the materials of the first layers 1 and the third layers 3 are identical or different. For simplicity, only one etch is mentioned here. This etch aims to form first spaces 11 in place of the central portions of the first layers 1, and third spaces 33 in place of the central portions of the third layers 3.This total etching can be stopped at a time, possibly after an over-etching time intended to guarantee the total removal of the first material from the first layers 1 and the total removal of the third material from the third layers 3. This total etching has an isotropic character and can be carried out by wet or dry process, from the third openings 600G, 600D.

[0118] As illustrated in Figures 27A, 27B, the third openings 600G, 600D, the main space 601, the first spaces 11 and the third spaces 33 are then filled with one or more metallic layers, for example TiN-based, W, to form a gate 50 common to the first and second transistors T1, T2. This gate 50 is called the encapsulating gate and completely surrounds the channels 41a, 41b of the first and second transistors T1, T2. In one possibility, before deposition of the metallic layers of the gate 50, a dielectric layer based on a material with high permittivity, for example HfO2-based, is first deposited via the third openings 600G, 600D, in the main space 601, the first spaces 11, and the third spaces 33. This increases the thickness of the gate dielectric layers between the channels of transistors T1, T2 and the encapsulating gate 50. A chemical-mechanical polishing (CMP) is typically performed to remove excess metal deposited on the motifs 102M.This process in which the functional gate 50 is produced at the end of the process, after the formation of the other elements of the transistors T1, T2, in particular after the formation of the channels 41a, 41b, is called "gate last".

[0119] According to another possibility not illustrated, the gate 50 common to the transistors T1, T2 can be made before the formation of the channels 41a, 41b of the transistors T1, T2, in particular before the deposition of the first sacrificial layer 13, according to a process called "gate first".

[0120] According to the first embodiment of the present invention, a CFET device comprising superimposed GAA Tl, T2 transistors, with common gate 50, and having source contacts 60Sa, 60Sb and drain contacts 60Da, 60Db isolated from each other by the gate dielectric layers 31, 35, is made.

[0121] Figures 28A, 28B to 34A, 34B schematically illustrate a second embodiment of the CFET manufacturing process with GAA transistors having separate gates for each transistor T1, T2. Figures nA (n=28.. .34) correspond to first cross-sections along an xz plane, each illustrating a different step of the manufacturing process. Figures nB (n=28.. .34) correspond to second cross-sections along a yz plane, each illustrating the same step as the corresponding figure nA.

[0122] According to the second embodiment, as illustrated in Figures 28A, 28B, the sacrificial grid is typically separated into two distinct parts 150a, 150b. This separation can be achieved by means of a hard mask 163. In particular, before the sacrificial grid 150 is formed on the motifs 101M, the hard mask 163 is first formed on the motifs 101M. After deposition of the sacrificial grid, a chemical-mechanical polishing step with a stop on the hard mask 163 allows the formation of two distinct parts 150a, 150b of the sacrificial grid. The first part 150a of the sacrificial grid extends over one side of the motif 101M. The second part 150b of the sacrificial grid extends over a second side of the motif 101M. In the following, these two distinct parts, 150a and 150b, are successively removed. to be replaced by first and second functional grids.

[0123] The mask 203 is formed so as to protect the first source and drain contacts 60Sa, 60Da and the second source and drain contacts 60Sb, 60Db, as before.

[0124] As illustrated in Figures 29A, 29B, the second sacrificial grid portion 150b is first removed to form a third opening 600G exposing the flanks of the third layers 3 of the second stack E2, on a second side of the motif 101M. A second insulating portion 204, for example based on SiO2, is then formed at the bottom of the third opening 600G, at the level of the stack E1. Only the flanks of the third layers 3 of the second stack E2 are exposed here through the opening 600G.

[0125] As illustrated in Figures 30A, 30B, the central portions of the third layers 3 are then selectively etched to the internal spacers 131, the insulating layer 201, and the second gate dielectric layer 35 from the third opening 600G. This etching aims to form the third spaces 33 in place of the central portions of the third layers 3 for the purpose of creating the second gate of the second transistor T2. This complete etching can be stopped at a specific time, possibly after an over-etching time intended to ensure the complete removal of the third material from the third layers 3. This complete etching is isotropic and can be carried out wet or dry, starting from the third opening 600G.

[0126] As illustrated in Figures 31A, 31B, the third spaces 33 and the third opening 600G are then filled to form the second gate 50b around the channels 41b of the second transistor T2. According to one possibility, an additional dielectric layer is deposited in the third spaces 33 on the second gate dielectric layer 35, prior to filling the third spaces 33 and the third opening 600G with one or more metal layers. As before, the metal layers can be TiN-based, W-based.

[0127] As illustrated in Figures 32A, 32B, the first portion 150a of the sacrificial gate is preferably first partially removed so as to form a third opening 600D on the first side of the motif 10IM. During this intermediate step, the flanks of the second stack E2 on the first side of the motif 101M are exposed. The flanks of the first stack E1 on the first side of the motif 101M are masked by the remaining portion 150a of the sacrificial gate. A first insulating portion 205, for example based on SiO2, is then formed in the third opening 600D, on the remaining portion 150a of the sacrificial gate, to insulate the future first gate of the first transistor from the second gate 50b and the channels 41b of the second transistor T2.

[0128] As illustrated in Figures 33A, 33B, the remaining sacrificial gate portion 150a is then completely removed through the third opening 600D. The central portions of the first layers 1 are then selectively etched to the internal spacers 101, the insulating layer 201, and the first gate dielectric layer 31, from the third opening 600D. This etching aims to form first spaces 11 in place of the central portions of the first layers 1 for the purpose of creating the first gate of the first transistor T1. This complete etching can be stopped at a specific time, possibly after an over-etching time intended to ensure the complete removal of the first material from the first layers 1. This complete etching is isotropic and can be carried out wet or dry, from the third opening 600D.

[0129] As illustrated in Figures 34A, 34B, the first spaces 11 and the third opening 600D are then filled to form the first gate 50a around the channels 41a of the first transistor T1. According to one possibility, an additional dielectric layer is deposited in the first spaces 11 on the first gate dielectric layer 31, prior to filling the first spaces 11 and the third opening 600D with one or more metal layers. As before, the metal layers can be TiN-based, W-based.

[0130] According to this second embodiment, a CFET device comprising superimposed GAA T1, T2 transistors with independent gates 50a, 50b, and having source contacts 60Sa, 60Sb and drain contacts 60Da, 60Db isolated from each other by the gate dielectric layers 31, 35, is provided. The independent gates 50a, 50b are electrically independent and allow independent control of the superimposed P-type transistor and the N-type transistor.

[0131] The solutions detailed in this invention are particularly effective for fabricating CFET devices with stacked GAA transistors. However, the invention is not limited to the embodiments described above.

[0132] In particular, the embodiment described with reference to Figures 34A and 34B provides for isolation of the first source contact from the second source contact by the first grid dielectric layer and by the second grid dielectric layer, as well as isolation of the first drain contact from the second drain contact by said first grid dielectric layer and by said second grid dielectric layer. The invention also extends to embodiments in which the first source contact and the second drain contact are separate and isolated from each other by the first grid dielectric layer and by the second grid dielectric layer, and in which the first drain contact and the second source contact are separate and isolated from each other by said first grid dielectric layer and by said second grid dielectric layer. grid.

Claims

Claims

1. Microelectronic device comprising at least two superimposed transistors (T1, T2) in a main direction (z), comprising: A first transistor (Tl), comprising: • at least two first channels (41a) stacked in the main direction (z), each channel being based on a first semiconductor material, • a first source (42a) and a first drain (43a) based on said first semiconductor material, • a first source contact (60Sa) and a first drain contact (60Da) connected respectively to said first source (42a) and to said first drain (43a), • a first grid (50, 50a) called a covering grid, completely surrounding at least one of the first channels (41a), • a first dielectric gate layer (31) separating each first channel (41a) from the first encapsulating gate (50, 50a), A second transistor (T2), comprising: • at least two second channels (41b) stacked in the main direction (z), each channel being based on a second semiconductor material, • a second source (42b) and a second drain (43b) based on said second semiconductor material, • a second source contact (60Sb) and a second drain contact (60Db) connected respectively to said second source (42b) and to said second drain (43b), • a second grid (50, 50b) called a covering grid, completely surrounding at least one of the second channels (41b), • a second gate dielectric layer (35) separating each second channel (41b) from the second surrounding gate (50, 50b), the device being characterized in that the first source contact (60Sa) and one of the second source contact (60Sb) and the second drain contact (60Db) are distinct and isolated from each other by the first gate dielectric layer (31) and by the second gate dielectric layer (35), and in that the first drain contact (60Da) and the other of the second source contact (60Sb) and the second drain contact (60Db) are distinct and isolated from each other by said first gate dielectric layer (31) and by said second gate dielectric layer (35).

2. Device according to the preceding claim in which the first gate dielectric layer (31) and the second gate dielectric layer (35) are based on the same material, thus forming a continuous dielectric layer between the first and second source contacts (60Sa, 60Sb) and between the first and second drain contacts (60Da, 60Db).

3. Device according to any one of the preceding claims in which the first semiconductor material and the second semiconductor material are based on a two-dimensional (2D) material chosen from transition metal dichalcogenides MX2 with M taken from molybdenum (Mo) or tungsten (W), and X taken from sulfur (S), selenium (Se) or tellurium (Te).

4. Device according to any one of the preceding claims in which the first and second encapsulating gates (50a, 50b) form the same gate (50) common to the first and second transistors (T1, T2).

5. Device according to any one of claims 1 to 3, in which the first and second surrounding gates (50a, 50b) are distinct, the first gate (50a) completely surrounding each first channel (41a) of the first transistor (T1), and the second gate (50b) completely surrounding each second channel (41b) of the second transistor (T2).

6. Device according to any one of the preceding claims in which the first semiconductor material has a first conductivity type, for example N-type, and the second semiconductor material has a second conductivity type different from the first conductivity type, for example P-type.

7. A method of manufacturing a microelectronic device according to any one of the preceding claims, the method comprising the following steps: Providing on a substrate (S) a first stack (El) and a second stack (E2) superimposed in the direction (z), said first stack (El) comprising a plurality of first layers (1) made of a first material, alternating with a plurality of second layers (2) made of a second material, said second stack (E2) comprising a plurality of third layers (3) made of a third material, alternating with a plurality of fourth layers (4) made of a fourth material, said first and second stacks (El, E2) being separated by a dielectric layer (201), Forming, in the superimposed first stack (El) and second stack (E2), first openings (100) defining first patterns (101M), Form a sacrificial grid (150) straddling the first patterns (101M) and partly in the first openings (100), Forming in the first patterns (101M) second openings (200) defining second patterns (102M), on either side of the sacrificial grid (150), Forming a first sacrificial layer (13) in the second openings (200), on the sides of the second layers (2) of the first stack (El), Forming a second sacrificial layer (14) on the first sacrificial layer (13) and on the sides of the fourth layers (4) of the second stack (E2), leaving a space (400) for access to the first sacrificial layer (13), Removing the first sacrificial layer (13), from the access space (400), while retaining the second sacrificial layer (14), so as to form first cavities (400a) opening onto the sides of the second layers (2) of the first stack (El), Removing from the first cavities (400a) the second material of the second layers (2) selectively to the first material of the first layers (1), so as to form second spaces (22), Forming a first gate dielectric layer (31) in the second spaces (22) on exposed portions of the first material of the first layers (1), and in the first cavities (400a) on exposed parts of the second sacrificial layer (14), • Deposit a layer (40) based on a first semiconductor material in the second spaces (22), on the first gate dielectric layer (31), so as to form: • the first channels (41a) of the first transistor (Tl) based on the first semiconductor material, directly above the sacrificial gate (150), • a first source (42a) and a first drain (43a) of the first transistor (Tl) based on the first semiconductor material, on either side of the first channels (41a) of the first transistor (Tl), Filling the first cavities (400a) with a first electrically conductive material to form first source and drain contacts (60Sa, 60Da) of the first transistor (Tl), Removing the second sacrificial layer (14), so as to form second cavities (400b) opening onto the sides of the fourth layers (4) of the second stack (E2), Removing from the second cavities (400b) the fourth material of the fourth layers (4) selectively to the third material of the third layers (3), so as to form fourth spaces (44), Forming a second gate dielectric layer (35) in the fourth spaces (44) on exposed portions of the third material of the third layers (3), and in the second cavities (400b) on the first gate dielectric layer (30), Depositing a layer (45) based on a second semiconductor material in the fourth spaces (44), on the second gate dielectric layer (35), so as to form: second channels (41b) of the second transistor (T2) based on the second semiconductor material, directly above the sacrificial gate (150), a second source (42b) and a second drain (43b) of the second transistor (T2) based on the second semiconductor material, on either side of the second channels (41b) of the second transistor (T2), • Filling the second cavities (400b) with a second electrically conductive material to form second source and drain contacts (60Sb, 60Db) of the second transistor (T2), • Remove the sacrificial grid to form third openings (600G, 600D), • Remove from the third openings (600G, 600D), the first layers (1) and the third layers (3), to form first spaces (11) and third spaces (33) respectively, • Fill the first and third spaces (11, 33), to form respectively the first and second grids (50a, 50b) surrounding the first and second transistors (T1, T2).

8. A manufacturing method according to the preceding claim, further comprising the following steps: • Form first spacers (101) between the first encapsulating grid (50a) and the first source and drain contacts (60Sa, 60Da), • Form second spacers (131) between the second wrapping gate (50b) and the second source and drain contacts (60Sb, 60Db).

9. A manufacturing method according to the preceding claim, wherein the formation of the first and second spacers (101, 131) comprises the following steps: • Preferably form spacers (170) bordering the sacrificial grid (150) and resting on the first patterns (101M), • Before forming the first sacrificial layer (13), partially remove, from the second openings (200), the first material of the first layers (1) selectively to the second material of the second layers (2), so as to forming first spacer cavities (10), preferably directly above the spacers (170), • Filling the first spacer cavities (10) with a first dielectric material to form the first spacers (101) • Before forming the second sacrificial layer (14), partially removing, from the second openings (200), the third material of the third layers (3) selectively to the fourth material of the fourth layers (4), so as to form second spacer cavities (30), preferably directly above the spacers (170), • Filling the second spacer cavities (30) with a second dielectric material to form the second spacers (131).

10. Manufacturing method according to the preceding claim, wherein the first material of the first layers (1) is identical to the third material of the third layers (3), and wherein the first and second spacers (101, 131) are formed simultaneously.

11. Manufacturing method according to any one of claims 7 to 10, wherein the sacrificial gate comprises a first part (150a) and a second part (150b) which are distinct, and wherein the removal of the sacrificial gate comprises: • a first removal of the first part (150a) of the sacrificial gate configured to form a third opening (600D) opening only onto flanks of the first layers (1), on a first side only of the first pattern (101M), followed by a removal of the first layers (1) from said third opening (600D) to form the first spaces (11), and a filling of said first spaces (11) to form the first gate (50a) surrounding the first transistor (T1), and • a second removal of the second part (150b) of the sacrificial gate configured to form a third opening (600G) opening only onto flanks of the third layers (3),from only a second side of the first pattern (101M), followed by removal of the third layers (3) from said third opening (600G) to form the, third spaces (33), and a filling of said third spaces (33) to form the second gate (50b) surrounding the second transistor (T2).

12. Manufacturing method according to the preceding claim in which the first removal comprises a formation of a first insulation portion (205) on sides of the first stack (E2) at the level of the first side of the first pattern (101M), before filling the first spaces (11) to form the first surrounding grid (50a).

13. Manufacturing method according to any one of claims 11 to 12 wherein the second removal comprises forming a second insulation portion (204) on sides of the first stack (El) at the second side of the first pattern (101M), before filling the third spaces (33) to form the second surrounding grid (50b).

14. A manufacturing method according to any one of claims 11 to 13, wherein the second encapsulating grid (50b) is formed before the first encapsulating grid (50a).

15. A manufacturing method according to any one of claims 11 to 14 comprising, before removing the sacrificial gate, separating the sacrificial gate into a first portion (150a) and a second portion (150b) distinct from each other, said first and second portions (150a, 150b) of sacrificial gate extending respectively on the first and second sides of the first pattern (101M), the first removal being carried out on the first portion (150a) of gate and the second removal being carried out on the second portion (150b) of gate.

16. Manufacturing method according to the preceding claim, in which, before forming the sacrificial gate, a hard mask (163) is formed on the first patterns (101M), and in which the separation of the sacrificial gate is carried out by chemical-mechanical polishing with stopping on said hard mask (163).

Images