LOW LEAKAGE CURRENT MOS TRANSISTOR

The field-effect transistor with a lateral grid conductor addresses GIDL current and parasitic capacitances in SOI transistors, improving electrical performance and simplifying manufacturing by reducing vertical electric fields and enhancing short-channel control.

FR3157669B1Active Publication Date: 2026-06-19COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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Patent Information

Authority / Receiving Office
FR · FR
Patent Type
Patents
Current Assignee / Owner
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Filing Date
2023-12-22
Publication Date
2026-06-19

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Abstract

One aspect of the invention relates to a field-effect transistor (3) comprising: a channel region (11); a source region (12) and a drain region (13); a gate structure (14) comprising: a gate dielectric layer (14b); a gate electrode (14a) having a first work output (W1); and a lateral gate conductor (14c) disposed at least against the flank of the gate electrode (14a) located on the side of the drain region (13), the lateral gate conductor (14c) extending to the gate dielectric layer (14b) in direct contact with the gate electrode (14a) and having a second work output (W2); the second work output (W2) being: strictly greater than the first work output (W1) when the transistor is of type p; strictly less than the first work output (W1) when the transistor is of type n. Figure to be published with the abbreviation: Figure 3
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