Method for manufacturing or determining a multilayer substrate for an elastic wave device

Abstract

The invention relates to a method for manufacturing or determining a multilayer substrate for an elastic wave device comprising at least one transducer (19) and operating with an elastic wave having a shear wavelength λ and preferably with a frequency below 1 GHz, in particular with a frequency between 500 MHz and 1 GHz, the multilayer substrate comprising a piezoelectric layer (3), a dielectric layer (5), and a base substrate (7), the piezoelectric layer (3) in particular being lithium tantalate LiTaO3 (LTO), the dielectric layer (5) being silicon dioxide (SiO2), and the base substrate (7) being a silicon substrate, in particular silicon Si(100) or Si(111), comprising steps for determining, for a predetermined operating wavelength, the thickness hLTO of the piezoelectric layer (3) and / or hSiO2 of the dielectric layer (5). Fig. 1