Multilayer structure for an elastic wave device

Abstract

The invention relates to a multilayer structure configured for an elastic wave device (11), the elastic wave device comprising at least one transducer (19) and operating with an elastic wave having a shear wavelength λ and a frequency between 100 MHz and 50 GHz, in particular between 600 MHz and 1 GHz, the multilayer structure comprising: a piezoelectric layer (3), a dielectric layer (5), and a base substrate (7), the piezoelectric layer (3) being made of Lithium Niobate (LiNbO3), the dielectric layer (5) being made of Silicon Dioxide (SiO2), and the base substrate (7) being a silicon substrate, in particular silicon Si (100) or Si (111), characterized in that the piezoelectric layer (3) has an orientation (YXl) / θ with θ between 26° and 64°, in particular between 26° and 41°, more particularly between 36° and 41°, more preferably 41° according to the standard definition IEEE 1949 std-176, with hLNO / hSiO2 = between 0.75 and 0,85 preferably between 0.79 and 0.81, hLNO being the thickness of the piezoelectric layer (3) and hSiO2 being the thickness of the dielectric layer (5). Fig. 1,