Thermal detector comprising an absorbent membrane suspended from a loop electrode

Abstract

The invention relates to a thermal detector comprising an absorbing membrane (50) suspended above a reading substrate (10), which includes a thermistor layer (53) resting on two electrodes (51, 52). The first electrode (51) is a loop track, and the second electrode (52) has a central portion (52.1) and a radial track (52.2). Furthermore, the thermistor layer (53) has a peripheral contact area (53p) in contact with the first electrode (51) and a central contact area (53c) in contact with the central portion (52.1); the thermistor layer (53) being electrically isolated from the radial track (52.2). See Fig. 3A for abbreviations.

Description

Title of the invention: Thermal detector comprising an absorbing membrane suspended from a loop electrode. Technical field

[0001] The field of the invention is that of thermal detectors of electromagnetic radiation, for example infrared or terahertz, comprising an absorbing membrane that is suspended above a reading substrate and thermally insulated from it. The invention is particularly applicable to the fields of, among others, infrared imaging, thermography, and gas detection. PRIOR TECHNOLOGY

[0002] Thermal detectors are adapted to detect electromagnetic radiation, for example infrared or terahertz. For this purpose, they may comprise an absorbing membrane, suspended above a reading substrate, comprising an absorber of the electromagnetic radiation to be detected, and a thermometer transducer, for example a thermistor layer, thermally coupled to the absorber.

[0003] To ensure thermal insulation of the thermistor layer from the reading substrate, the absorbing membrane is usually suspended above the reading substrate by anchoring pillars and is thermally insulated from it by support arms. These anchoring pillars and support arms also have an electrical function insofar as they allow the thermistor layer to be connected to the reading circuit located in the substrate.

[0004] The support arms can be formed from a stack of two thin insulating layers, made of a thermally and electrically insulating material, between which is placed a thin conductive layer made of an electrically conductive material. This thin conductive layer forms, in the absorbing membrane, the electrodes enabling the connection of the thermistor layer to the reading circuit.

[0005] Fig. 1A and Fig. 1B are top and cross-sectional views of a thermal detector 1 according to an example of the prior art, here adapted to absorb infrared radiation of the LWIR (Long Wavelength Infrared) spectral band whose central wavelength is between approximately 8pm and 14pm.

[0006] The thermal detector 1 comprises an absorbing membrane 50 suspended above a reading substrate 10 by anchoring pillars 20 and thermally insulated from it by retaining and thermally insulated arms 30. These anchoring pillars 20 and retaining arms 30 also have an electrical function by connecting electrically the absorbing membrane 50 to a reading circuit located in the reading substrate 10.

[0007] The absorbing membrane 50 here comprises a thermistor layer 53 in contact with two thin-film electrodes 51, 52. The thermistor layer 53 is also in thermal contact with an absorber 54 adapted to absorb the electromagnetic radiation to be detected. The thermistor layer 53 is made of a material exhibiting an electrical resistance that varies with its temperature. The absorbing membrane 50 is vertically separated from a reflector 12 by a predetermined distance so as to form a quarter-wave interference cavity optimizing the absorption by the absorber 54 of the electromagnetic radiation to be detected.

[0008] It is usually desirable to minimize the electrical resistance of the thermistor layer. Indeed, in the case of a voltage-polarized thermal detector, this improves performance, particularly in terms of the NETD parameter, which corresponds to the noise equivalent temperature difference (NETD, Noise Equivalent Temperature Difference).

[0009] In the example of [Fig. 1A] and [Fig. 1B], the thermistor layer 53 is a rectangular layer, and the two electrodes 51 and 52 have parallel, straight inner edges. The thermistor layer 53 is thus in contact with the electrodes at these edges. It therefore presents an electrically polarized volume with lateral dimensions L and W and a thickness h. The dimension L is measured between the contact areas of the thermistor layer with the electrodes, while the dimension W corresponds to the width of the thermistor layer 53. It appears that the dimension L is limited by the inter-electrode insulation (which depends in particular on the nature of the thin insulating film on which the thermistor layer rests), and the width W is limited by the dimensions of the detection pixel. When the dimension L is large, the polarized volume of the thermistor layer 53 is large, which helps to avoid having too high a 1 / f noise.However, the electrical resistance R of the thermistor layer 53 is not optimal, mainly due to the small value of the width W, which cannot extend beyond the pixel dimension. Recall here that the electrical resistance depends on the ratio L / W by the relation: R = (p / h)x(L / W), where p is the resistivity of the thermistor layer material, and h is its thickness.

[0010] Figure 2 is a top view of a thermal detector 1 according to another prior art example. Here, the thermistor layer 53 is still a rectangular layer, but the two electrodes 51, 52 have an interdigitated shape: the spacing between the electrodes 51, 52 has a serpentine shape of dimensions L and W. Here, the L / W ratio is minimal, which optimizes the electrical resistance R of the thermistor layer 53. On the other hand, its polarized volume is reduced by compared to that of the parallelepiped configuration of [Fig.1A], which results in a higher 1 / f noise. Description of the invention

[0011] The invention aims to remedy at least in part the drawbacks of the prior art, and more particularly to offer a thermal detector which has improved performance in terms of NETD (or NEP, Noise Equivalent Power) parameter, and in particular in terms of electrical resistance R of the thermistor layer and noise in 1 / f.

[0012] To this end, the object of the invention is a thermal detector comprising a reading substrate and an absorbing membrane. The latter is suspended above the reading substrate and is electrically connected to and thermally insulated from it. It comprises first and second thin-film electrodes and a thermistor layer located on and in contact with the electrodes.

[0013] According to the invention, the first electrode is a looped track extending along the periphery of the absorbing membrane. The second electrode is formed by: a central portion, located at the center of the first looped electrode and partially surrounded by it; and a radial track extending from the central portion to an edge of the absorbing membrane. Furthermore, the thermistor layer has: a peripheral contact zone, extending along the first looped electrode, where it is in contact with it; and a central contact zone, located at the center of the peripheral contact zone and partially surrounded by it, where it is in contact with the central portion of the second electrode, the thermistor layer being electrically insulated from the radial track.

[0014] Some preferred but not limiting aspects of this thermal detector are as follows.

[0015] The peripheral contact zone may have an inner border parallel and concentric to an outer border of the central contact zone.

[0016] The inner border of the peripheral contact area and the outer border of the central contact area can be circular.

[0017] The thermistor layer may have a circular shape and be concentric to the inner edge of the peripheral contact area and to the outer edge of the central contact area.

[0018] The first electrode may have an inner border parallel and concentric to an outer border of the central part of the second electrode.

[0019] The inner border of the first electrode and the outer border of the central part of the second electrode can be circular.

[0020] The absorbing membrane may include a thin insulating layer located between the thermistor layer and the radial track of the second electrode.

[0021] The central part of the second electrode can be located in the center of the absorbing membrane.

[0022] The thermistor layer and the electrodes can be configured so that a parameter Z = R xh / p is less than or equal to 0.3, where R is the electrical resistance of the thermistor layer, h its average thickness, and p the resistivity of the material of the thermistor layer.

[0023] The first electrode and the radial track of the second electrode can be coplanar, the first electrode extending in an open loop which has an opening in which the radial track extends.

[0024] The thermistor layer may have an angular notch located perpendicular to the opening of the first electrode.

[0025] The first electrode and the radial track of the second electrode may not be coplanar, the first electrode extending in a closed loop, the radial track being vertically separated from the first electrode by an intercalated thin insulating layer. Brief description of the drawings

[0026] Other aspects, objects, advantages and features of the invention will become more apparent upon reading the following detailed description of preferred embodiments thereof, given by way of non-limiting example, and made with reference to the accompanying drawings in which:

[0027] [Fig.1A] and [Fig.1B], already described, are schematic and partial views, respectively in top view and in cross-section along line AA, of a thermal detector according to an example of the prior art where the thermistor layer and electrodes have a parallelepiped configuration;

[0028] The [Fig.2], already described, is a schematic and partial cross-sectional view of a thermal detector according to another prior art example where the electrodes of the absorbing membrane have an interdigitated configuration;

[0029] [Fig.3A] and [Fig.3B] are schematic and partial views, respectively in top view and in cross-section along line AA, of a thermal detector according to an embodiment where one of the electrodes has an annular open-loop configuration;

[0030] [Fig.4A] and [Fig.4B] are schematic and partial views, respectively in top view and in cross-section along line AA, of a thermal detector according to an embodiment variant where the absorber is distinct from the electrodes, and where the thermistor layer has a variation in thickness;

[0031] [Fig.5A] is a schematic and partial top view of a thermal detector according to another embodiment where the thermistor layer has an angular notch;

[0032] Fig. 5B illustrates an example of accessible domains, depending on the electrical resistance R and the polarized volume V of the thermistor layer, in the case of a parallelepiped configuration and in the case of two open-loop configurations for a thermistor material of given resistivity and thickness;

[0033] [Fig.6] is a schematic and partial top view of a thermal detector according to another embodiment where one of the electrodes has a rectangular open-loop configuration;

[0034] [Fig.7A] and [Fig.7B] are schematic and partial views, respectively in top view and in cross-section along line AA, of a thermal detector according to another embodiment where one of the electrodes has a closed-loop configuration.

[0035] DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

[0036] In the figures and throughout the description, the same reference numerals represent identical or similar elements. Furthermore, the various elements are not drawn to scale in order to enhance the clarity of the figures. Moreover, the different embodiments and variants are not mutually exclusive and may be combined. Unless otherwise indicated, the terms "approximately," "about," and "in the order of" mean within 10%, and preferably within 5%. Furthermore, the terms "between ... and ..." and equivalents mean that the limits are inclusive, unless otherwise stated.

[0037] The invention relates to a thermal detector of electromagnetic radiation, for example infrared or terahertz, particularly in the LWIR range (8-14 pm), comprising an absorbing membrane suspended above a reading substrate. The absorbing membrane is thermally insulated from the substrate and electrically connected to a reading circuit located within it. It includes, in particular, a thermistor layer and two thin-film electrodes that provide its electrical polarization.

[0038] The thermal detector according to the invention exhibits improved performance, particularly in terms of Noise Equivalent Temperature Difference (NETD). It should be noted that performance can also be evaluated here in terms of Noise Equivalent Power (NEP).

[0039] For this purpose, the first electrode is a loop track (open or closed), which extends along the periphery of the absorbing membrane. It extends along the periphery (i.e., the perimeter) of the absorbing membrane, and preferably the along all sides of the absorbing membrane. The periphery (boundary) of the absorbing membrane is the line that delimits the membrane in an XY plane. The first electrode may open onto the periphery or be located outside of it in the XY plane. A "track" is defined as a thin, strip-shaped layer, meaning its length is greater than its width. Since the track is a thin layer, its thickness is less than both its length and width. Furthermore, the track extends in a loop shape, meaning it extends longitudinally around a central area (hence the loop or ring shape).

[0040] Furthermore, the second electrode consists of a central portion, located at the center of the first loop electrode, and partially surrounded by it (in the same plane or in a different plane). By "located at the center," it is understood that the central portion is situated at an average position at each point of an inner edge of the first loop electrode. The second electrode also consists of a radial track connecting the central portion to an edge of the absorbing membrane (this edge helps define the periphery / boundary of the membrane). It provides the electrical connection between the central portion and the retaining arm in which the conductive thin layer of the second electrode extends.

[0041] The first loop electrode may have an open-loop or closed-loop configuration: • In the case of an open loop, the first electrode is not closed on itself: it has an angular opening that extends across the entire width of the loop track. In this configuration, the first and second electrodes (central part and radial track) can be coplanar: the radial track of the second electrode then extends into the angular opening of the first electrode in an open loop. • In a closed loop, the first electrode is closed upon itself and therefore has no angular opening. To prevent short circuits between the electrodes, the radial track of the second electrode is not coplanar with the first electrode in a closed loop and extends above or below it. Preferably, the central portion of the second electrode is coplanar with the radial track (and therefore not coplanar with the first electrode).

[0042] Finally, the thermistor layer extends over and in contact with the two electrodes. More precisely, it has a peripheral contact zone, which extends along the first electrode in a loop, where it is in contact with it. It also has a central contact zone, located in the center of the peripheral contact zone and partially surrounded by the peripheral contact zone, where it is in contact with the central part of the second electrode.

[0043] Thus, this geometric configuration of the two electrodes and the thermistor layer, where the first electrode is in open or closed loop, optimizes the electrical resistance R of the thermistor layer, while maintaining a sufficient volume V of the electrically polarized thermistor layer to avoid generating more noise in 1 / f. This optimizes the NETD and therefore the performance of the thermal detector.

[0044] Figures 3A and 3B are schematic and partial views, respectively top view and cross-section along section line AA, of a thermal detector 1 according to one embodiment. In this example, the first electrode 51 extends in an open loop. It is therefore coplanar with the radial track 52.2 (and with the central portion 52.1) of the second electrode 52.

[0045] Here and for the remainder of the description, a three-dimensional direct frame XYZ is defined, where the XY plane is substantially parallel to the plane of a reading substrate 10 of the thermal detector 1, the Z axis being oriented in a direction substantially orthogonal to the XY plane, from the reading substrate 10 towards the absorbing membrane 50. Furthermore, the terms "lower" and "upper" are understood as relating to an increasing positioning when moving away from the reading substrate 10 along the +Z direction.

[0046] The thermal detector 1 may belong to an array of identical thermal detectors, preferably arranged periodically in an XY plane. Each thermal detector forms a detection pixel. The absorbing membranes then rest on the same reading substrate. In the case of infrared detection, the array may comprise, for example, between 60x80 and 1280x1024 pixels, with a repetition rate p that may be on the order of 1 Opm, for example.

[0047] The thermal detector 1 comprises an absorbing membrane 50, suspended above the reading substrate 10 by anchoring pillars 20, and thermally insulated from it by retaining arms 30. The anchoring pillars 20 and retaining arms 30 also provide an electrical connection function from the thermistor layer 53 to the reading circuit contained in the reading substrate 10.

[0048] The readout substrate 10 is formed of a support substrate 11 containing the readout circuit (not shown) adapted to control and read the thermistor layer 53. The readout circuit can be in the form of a CMOS integrated circuit. It thus comprises active microelectronic elements (e.g., transistors, diodes, amplifiers, etc.) and electrical interconnection levels. Here, only the upper interconnection level is shown. The interconnection levels are formed of conductive lines or portions connected vertically by conductive vias (not shown). The conductive portions and the conductive vias can be made of copper, aluminum, and / or tungsten, among other materials, for example, in by means of a Damascus process in which trenches made in inter-metal insulating layers are filled. These can be made on the basis of silicon oxide (SiO2, SiOF, SiOC, SiOCH...) and possibly of silicon nitride SiN.

[0049] Here, conductive portions of the upper interconnection level form a reflector 12, as do connecting portions 13 of the anchoring pillars 20. The reflector 12 is adapted to reflect the electromagnetic radiation to be detected towards the absorbing membrane 50, and therefore extends in the XY plane opposite it (and more precisely opposite the absorber of the absorbing membrane 50). The vertical spacing between the absorbing membrane 50 (and more precisely the absorber) and the reflector 12 allows the formation of a quarter-wave interference optical cavity that maximizes the absorption of the electromagnetic radiation to be detected.

[0050] A barrier layer (not shown), for example made of SiN, can cover the support substrate 11 and the upper interconnection line. This prevents the diffusion of metal from the portions of the upper interconnection line to the subsequent upper layers. Finally, a protective layer (not shown) can cover the barrier layer, and therefore also the support substrate 11 and the readout circuit (including the intermetal insulating layers and the interconnection lines). This protective layer is made of a material substantially inert to an etching agent subsequently used to remove the sacrificial layer(s) (for example, hydrofluoric acid in the vapor phase). It can be made, for example, of Al₂O₃ with a thickness of approximately 20 to 40 nm, or of A₂N with a thickness of approximately 100 nm.

[0051] The anchoring pillars 20 extend along the +Z direction so as to space the absorbing membrane 50 a predefined distance from the reading substrate 10 and the reflector 12. They are made of an electrically conductive material, for example tungsten- or copper-based. They consist of conductive vias, each topped with an upper conductive pad, for example made of TiN, approximately 20 to 50 nm thick. This pad prevents diffusion of the material from the conductive vias. Each conductive via may also include a thin layer (not shown), extending around the periphery of the via in the XY plane and made, for example, of TiN, to prevent diffusion of the material from the vias.

[0052] The support arms 30 are formed by a stack of at least one insulating thin layer 41 and a conductive thin layer 42 made of an electrically conductive material. In this example, the stack comprises a lower insulating thin layer 41, a conductive thin layer 42, and an upper insulating thin layer 43. This stack is also found on the anchoring pillars 20 and in the absorbent membrane 50.

[0053] The insulating thin films 41, 43 are preferably made of the same material, for example amorphous silicon, silicon nitride, aluminium nitride, among other things, and preferably have the same thickness. This thickness can be between 100nm and 100nm, preferably between 30nm and 70nm, for example approximately 50nm. It can be adjusted as needed, depending on the width and length of the support arms 30, to ensure good mechanical stability.

[0054] The thin conductive layer 42 extends into the support arms 30 and partly into the absorbing membrane 50 to form the two electrodes 51, 52. It is made of an electrically conductive material, for example of at least one metallic material such as TiN or NiCr, among others, and has a thickness for example between 5 and 15nm, preferably between 6 and 10nm.

[0055] The absorbing membrane 50 comprises a thermistor layer 53, that is to say a layer of a material whose electrical resistance varies according to its thermal heating, the two polarization electrodes 51, 52, and at least one absorber (formed here of the electrodes 51, 52) thermally coupled to the thermistor layer 53.

[0056] The absorbing membrane 50 comprises a portion of the stack of the two insulating thin layers 41, 43 and the conducting thin layer 42. Here, the lower insulating thin layer 41 forms the support layer of the absorbing membrane 50.

[0057] The polarization electrodes 51, 52 are here two distinct parts of the same conductive thin film 42. They are coplanar. They have a geometry in which the first electrode 51 forms an open-loop track that surrounds a central part 52.1 of the second electrode 52. In addition, the angular opening 51.1 of the first electrode allows passage of the radial track 52.2 of the second electrode 52.

[0058] The first electrode 51 extends along the periphery of the absorbing membrane 50 and has an open-loop track shape. It partially surrounds the central portion 52.1 of the second electrode 52 (in the same XY plane) and allows the radial track 52.2 of the latter to pass through its angular aperture 51.1. The angular aperture 51.1 is large enough to ensure good electrical insulation with the radial track 52.2 of the second electrode 52.

[0059] The first electrode 51 is delimited in the XY plane by an inner border 51, oriented towards the central part 52.1 of the second electrode 52, and an opposite outer border which is identical to the border of the absorbing membrane 50. A lateral border connects the two inner and outer borders and laterally delimits (in an orthoradial direction) the angular opening 51.1 of the loop track. The inner border 51 preferably has a circular shape, but other shapes are possible, such as a polygonal shape, for example rectangular or square.

[0060] The second electrode 52 is formed of a central portion 52.1 and a radial track 52.2. The central portion 52.1 is located at the center of the first open-loop electrode 51 and is also located at the center of the absorbing membrane 50. It is therefore partially surrounded by the first electrode 51. It is delimited in the XY plane by an outer edge 52.1e. This edge preferably has a circular shape, but alternatively may have a polygonal shape, for example, rectangular or square. Its shape is preferably correlated with that of the inner edge 51e of the first electrode 51, so that the outer edge 52.1e is parallel to the inner edge 51e. In other words, the outer edge 52.1e and the inner edge 51e are preferably both circular, or, alternatively, polygonal and parallel to each other.

[0061] The radial track 52.2 extends longitudinally within the angular opening 51.1 of the first electrode 51, running from the central portion 52.1 to a junction of the absorbing membrane 50 with the retaining arm 30 associated with the second electrode 52. It is a track, or a strip, in the sense that its length is greater than its width. Preferably, it extends in a straight line. It may have a constant width or, as in this case, a width that increases with distance from the central portion 52.1. This radial track 52.2 is electrically isolated from the thermistor layer 53: in this example, the thermistor layer 53 covers the radial track 52.2 but is separated (and therefore electrically isolated) from it by a portion of the upper insulating thin layer 43.

[0062] The upper insulating thin layer 43 covers the electrodes 51, 52 and the space between them. It extends continuously in the XY plane through the support arms 30 to the absorbing membrane 50 and has sufficient thickness to ensure good mechanical stability of the absorbing membrane. This thickness can therefore be between 15 nm and 100 nm, preferably between 30 nm and 70 nm, for example approximately 50 nm. The upper insulating thin layer 43 has through-holes opening onto the electrodes 51, 52, so as to allow the thermistor layer 53 to come into contact with the electrodes.

[0063] Note, however, as illustrated in [Fig.4B] (described later), that the upper insulating thin layer 43 can be omitted in the radial inter-electrode spacing if the spacing is sufficient and if the electrical resistivity of the lower insulating thin layer 41 and that of the thermistor layer 53 are sufficient to ensure good electrical insulation between the two electrodes 51, 52. It can thus be absent between the inner edge 511 and outer edge 521e, but be present in the angular opening 511 of the first electrode 51 in open loop, i.e. in the orthoradial inter-electrode spacing.

[0064] The thermistor layer 53 (shown as a dashed line in [Fig. 3A]) is here a material with a thickness, for example, on the order of a few tens to hundreds of nanometers. It may be a material based on a vanadium or titanium oxide, amorphous silicon, or an amorphous silicon germanium compound. In the case of silicon germanium, vanadium oxide, or titanium, additional layers for protection against HF vapor are provided (not shown here, to ensure clarity in the figures).

[0065] The electrical resistivity of the amorphous silicon thermistor layer 53 is, for example, between 60 Ω·cm and 1000 Ω·cm, for example, approximately 60 Ω·cm or 75 Ω·cm. In the case of germanium silicon, the electrical resistivity is, for example, between 100 Ω·cm and 75 Ω·cm, for example, approximately 100 Ω·cm (in the case of a rolling shutter readout mode). The electrical resistivity can be adjusted by growth doping and, if necessary, by the atomic proportion of germanium. The thickness of such a thermistor layer 53 can be on the order of tens to hundreds of nanometers.

[0066] The thermistor layer 53 extends here over the upper insulating thin layer 43. It comes into contact with the two electrodes 51, 52 through through-holes. Thus, it presents a peripheral contact zone 53p which extends along the first electrode 51 in an open loop, where it makes contact with it. It preferably extends over substantially the entire length of the first electrode 51.

[0067] The thermistor layer 53 also has a central contact area 53c, located in the center of the peripheral contact area 53p and partially surrounded by it, where it comes into contact with the central part 52.1 of the second electrode 52. The thermistor layer 53 is electrically insulated from the radial track 52.2. For this purpose, since the thermistor layer 53 has a continuous circular shape here (without angular notch as illustrated in [Fig. 5A]), a portion of the upper insulating thin layer 43 completely covers the radial track 52.2 so as to prevent any contact of the thermistor layer 53 with it.

[0068] Preferably, the outer edge 53ce of the central contact zone 53c is parallel and concentric with the inner edge 53pi of the peripheral contact zone 53p. Here, the edges 53ce and 53pi are advantageously circular. Preferably, the edge 53ce of the central zone 53c, the edge 52.1e of the central portion 52.1, the edge 51i of the first electrode 51, and the edge 53pi of the peripheral zone 53p are parallel and concentric with each other. Here, they are advantageously circular. The thermistor layer 53 then preferably has a circular shape concentric with the inner edge 53pi of the peripheral contact zone 53p and with the outer edge 53ce of the central contact zone 53c.

[0069] A minimum radial distance L can be defined for which the thermistor layer is electrically polarized. This radial distance L is defined between the inner edge 53pi of the peripheral contact area 53p, here circular in shape with radius Rp, and the outer edge 53ce of the central contact area 53c, here circular in shape with radius Rc, such that L = Rp - Rc. An average orthoradial distance W can also be defined for which the thermistor layer 53 is also electrically polarized. This distance W is parallel to the edges 53pi and 53ce and is measured at a position corresponding to Rc + L / 2, that is, at a central radial position within the polarized volume of the thermistor layer 53.

[0070] Furthermore, the thickness h of the thermistor layer can be constant in a radial direction, as illustrated in [Fig. 3B]. Alternatively, as described later with reference to [Fig. 4B], it can advantageously be greater at the central contact zone 53c and decrease as one moves away from it. The thermistor layer 53 then has a dome shape.

[0071] A protective top layer (not shown) can cover the thermistor layer 53, to ensure protection of the latter against possible contamination or degradation during the manufacturing process steps, such as the stripping step of the photosensitive resin used to locate the etching of the thermistor layer 53. It can be made of an electrically insulating material, for example a dielectric material such as a silicon oxide, nitride or oxynitride, or even alumina, among others, with a thickness of a few tens of nanometers.

[0072] Furthermore, the absorbing membrane 50 includes an absorber of the electromagnetic radiation to be detected. This absorber is in thermal contact with the thermistor layer 53. It is a thin-film absorber (Salisbury absorber). The material and thickness of the absorber are preferably chosen so that its surface resistance is substantially equal to the impedance of free space. In this example, this absorber is formed by the two electrodes 51, 52. Alternatively, as described later with reference to [Fig. 4B], this absorber can be a thin film located between the thermistor layer 53 and the upper protective layer. It then extends in the XY plane without being perpendicular to the underlying electrodes.

[0073] Thus, the thermal detector 1 exhibits improved performance, particularly in terms of NETD, because the so-called loop geometric configuration (here open loop) of the electrode 51, and therefore of the peripheral contact area 53p of the thermistor layer 53, makes it possible to optimize the electrical resistance R of the thermistor layer 53, while keeping a sufficient polarized volume V so as not to generate more noise in 1 / f.

[0074] Indeed, this configuration makes it possible to obtain a dimension W much greater than that of the thermal detector in the example of [Fig. 1A], while being able to optimize the dimension L so as to maintain a sufficient polarized volume of the thermistor layer 53 in terms of 1 / f noise. Furthermore, since it is therefore possible to maintain a large polarized volume by choosing the L / W ratio, the thickness of the thermistor layer 53 can be reduced compared to usual values, which makes it possible to reduce the duration of the thermistor layer deposition step and therefore lower production costs.

[0075] Fig. 4A and Fig. 4B are schematic and partial views, respectively in top view and in cross-section along the cutting line AA, of a thermal detector 1 according to an alternative embodiment.

[0076] The thermal detector 1 differs from that of [Fig. 3A] and 3B essentially in that the electrodes 51, 52 do not act as absorbers of the electromagnetic radiation to be detected. The distance L is therefore greater than in the case of [Fig. 3A], and a thin-film absorber 54 is located above the thermistor layer 53. It extends so as not to be perpendicular to the underlying electrodes.

[0077] Since the distance L is greater, the thin insulating layer 43 may be absent in the radial inter-electrode spacing. On the other hand, it remains present in the orthoradial inter-electrode spacing, that is to say in the angular opening 51.1 of the first electrode 51, so as to avoid any short circuit between the electrodes 51 and 52.

[0078] Insofar as the thermistor layer 53 covers and is in contact with the entire central part 52.1 of the second electrode 52, the central contact area 53c therefore corresponds to the surface of the central part 52.1. The edges 52.1e and 53ce are therefore coincident.

[0079] Furthermore, the thermistor layer 53 covers and is in contact with the entire inner periphery of the first electrode 51. The peripheral contact area 53p therefore corresponds to the surface covered by the first electrode 51 from the edge 5li. The edges 5li and 53pi are therefore also coincident.

[0080] Finally, the thermistor layer 53 exhibits a radial decrease in thickness h, from the central region 53c, where it has a high value, to the peripheral region 53p, where it has a lower value. Grayscale lithography can be used to obtain this shape of the thermistor layer 53. This radial variation in thickness limits the increase in current density at the center of the thermistor layer 53, and thus limits the local increase in 1 / f noise.

[0081] Figure 5A is a schematic, partial top view of a thermal detector 1 similar to that of Figure 3A. It differs essentially in that the thermistor layer 53 is not in the shape of a complete cylinder, but has a notch 53.1 in the XY plane over an angular sector of angle α. This angular notch 53.1 is located above the radial track 52.2 of the second electrode 52, and above (perpendicularly) the angular opening 51.1 of the first electrode 51. It is advantageous for limiting the risk of short circuits between the two electrodes 51, 52 in the orthoradial inter-electrode spacing, particularly in the absence of a portion of the upper insulating thin layer 43 in this area. In the case where angle a is zero, this configuration is then identical to that of [Fig.3A].

[0082] It is possible to estimate the polarized volume V of the thermistor layer of constant thickness h, as well as the associated electrical resistance R, by the following relations:

[0083] v= (1--^) xttx (Rp2-Rc2) xh “ hx^Ha) X RZ

[0084] Figure 5B illustrates an example of accessible domains, in terms of polarized volume V and electrical resistance R, for the parallelepiped configuration of Figure 1A (denoted Cp) and for the circular loop configuration of Figure 5A (denoted Cbc). In this example, the thermistor layer has an electrical resistivity p equal to 10 Ω·cm, and a constant thickness h equal to 80 nm. It is assumed here that the dimension L can vary between 1 and 4 pm, that the dimension W can vary between 4 and 7 pm, that the diameter Rp can vary between 2.5 and 3.5 pm, and finally that the diameter Rc can vary between 500 nm and 2 pm.

[0085] It appears that the circular loop configuration Cpc makes it possible to address pairs of values ​​(R,V) inaccessible with the parallelepiped configuration Cp, both in terms of electrical resistance R and polarized volume V. Thus, in the accessible range of the parallelepiped configuration Cp, the electrical resistance R remains high. It can only fall below 175 kΩ at the cost of a relatively small polarized volume V, here 0.6 pm³. Conversely, it is possible to increase the polarized volume only up to 1.4 pm³, and this results in an increase in electrical resistance up to 450 kΩ. On the other hand, in the case of a circular loop configuration Cbc with a zero angle α, the accessible range covers low values ​​of electrical resistance R, here up to 100 kΩ for a polarized volume that can reach up to 2 pm³. It is also possible to achieve a polarized volume of up to 3 pm3 for an electrical resistance of 300 kΩ.

[0086] Furthermore, if we compare the two types of configuration more directly, for an electrical resistance R of 175 kQ, the parallelepiped configuration Cp imposes A polarized volume of 0.6 pm³, whereas at the same electrical resistance value, the circular loop configuration Cbc allows for a polarized volume of 2.6 pm³, representing an increase of over 300%. Conversely, for a polarized volume of 1.4 pm³, the parallelepiped configuration Cp imposes an electrical resistance of 450 kΩ, while at the same polarized volume value, the circular loop configuration Cbc allows for an electrical resistance of 100 kΩ, representing a decrease of 75%.

[0087] Furthermore, according to one embodiment, the thermistor layer 53 is advantageously configured so that the parameter Z = R xh / p is less than or equal to 0.3: Z < 0.3. The thickness h can be an average value in the case where the thermistor layer 53 has a variation in thickness.

[0088] Indeed, the inventors have observed that below this value, the annular loop configuration optimizes the ratio between the effective polarized volume and the geometric volume of the thermistor layer 53, compared to the parallelepiped configuration. The effective polarized volume is evaluated here from the spatial distribution of the electric field in the thermistor layer 53. Optimizing this ratio prevents the current density from becoming too high at the center of the thermistor layer 53, more precisely at the central contact zone 53c. This, in particular, helps to limit the 1 / f noise.

[0089] By way of example, for the annular loop configuration, a vanadium oxide thermistor layer 53 with a resistivity p equal to 10 Q.cm, a constant thickness h equal to 80 nm and a resistance R of 300 kQ, a parameter Z of 0.24 is obtained. Similarly, for an amorphous silicon thermistor layer with a resistivity p of 70 Q.cm, a constant thickness h of 300 nm and a resistance R of 500 kQ, a parameter Z of 0.21 is obtained. In these two examples, the ratio is better in the case of the annular loop configuration compared to the parallelepiped configuration.

[0090] Specific embodiments have just been described. Various variants and modifications will be apparent to those skilled in the art.

[0091] Thus, [Fig. 6] is a schematic and partial top view of a thermal detector 1 according to another embodiment. In this example, the thermal detector 1 is similar to that of [Fig. 3A] and differs essentially in that the electrodes 51, 52 and the thermistor layer 53 have a rectangular (here square) open-loop configuration.

[0092] Figures [Fig. 7A] and [Fig. 7B] are schematic and partial views, respectively in top view and in cross-section along section line AA, of a thermal detector 1 according to another embodiment. The thermal detector 1... It differs here from that of [Fig.3A] and 3B essentially in that electrode 51 extends in a closed loop, and not in an open loop.

[0093] The electrode 51 extends continuously along the edge of the absorbing membrane 50. It therefore does not have the angular opening 51.1 illustrated in particular on [Fig.3A].

[0094] The electrode 52 comprises the central portion 52.1 and the radial track 52.2. To avoid any contact with the electrode 51, the radial track 52.2 extends above the electrode 51 and is vertically separated from it by an intervening insulating thin layer 44. The electrode 51 and the radial track 52.2 are therefore not coplanar. Furthermore, the central portion 52.1 of the second electrode 52 is also located above the electrode 51. It also rests on the intervening insulating thin layer 44. Finally, the upper insulating thin layer 43 covers the second electrode 52 as well as the intervening insulating thin layer 44.

[0095] Openings form the central contact zone 53c and the peripheral contact zone 53p. The central contact zone 53c corresponds to an opening made through the upper insulating thin layer 43, which leads to the central portion 52.1 of the second electrode 52. The peripheral contact zone 53p corresponds to an opening made through the upper insulating thin layer 43 and the intermediate insulating thin layer 44, which leads to the first electrode 51. The thermistor material 53 extends through these openings to make contact with the electrodes 51 and 52. Obviously, the opening of the peripheral contact zone 53p extends in an open loop to avoid leading to the radial track 52.2.

[0096] Note that this closed-loop configuration is similar to the embodiment of [Fig.3A], but it could also be applied to the embodiment of [Fig.4A], 5A and 6. Furthermore, the electrodes 51 and 52 can be close to each other (in projection in an XY plane) so as to do without a dedicated absorber 54, or can be far apart so that the absorber 54 is present.

[0097] As mentioned previously, the thermal detector 1 according to this embodiment exhibits the same improved performance, particularly in terms of NETD, because the so-called loop geometric configuration of the electrode 51 (here in closed loop), and therefore of the peripheral contact area 53p (in open loop) of the thermistor layer 53, makes it possible to optimize the electrical resistance R of the thermistor layer 53, while keeping a sufficient polarized volume V so as not to generate more noise in 1 / f.

[0098] In this example, electrode 52 (central part 52.1 and radial track 52.2) extends above electrode 51 in a closed loop. Alternatively, electrode 52 can extend below electrode 51, i.e., it is located between the insulating thin layers 41 and 44, while electrode 51 is located between the insulating thin layers 44 and 43. In this case, the opening of the peripheral contact area 53p can extend in a closed loop because there is no risk of opening onto the radial track 52.2.

Claims

Demands

1. Thermal detector (1), comprising: • a reading substrate (10); • an absorbing membrane (50), suspended above the reading substrate (10), electrically connected and thermally insulated from it, comprising: • a first and a second thin-film electrode (51, 52); • a thermistor layer (53), located on and in contact with the electrodes (51, 52); • characterized in that: • the first electrode (51) is a looped track extending along the periphery of the absorbing membrane (50); • the second electrode (52) is formed of: a central portion (52.1), located at the center of the first looped electrode (51), and partially surrounded by it; and a radial track (52.2) extending from the central portion (52.1) up to an edge of the absorbing membrane (50); • the thermistor layer (53) has: a peripheral contact area (53p), extending along the first electrode (51) in a loop, where it is in contact with it; and a central contact area (53c), located in the center of the peripheral contact area (53p) and partly surrounded by it, where it is in contact with the central part (52.1) of the second electrode (52), the thermistor layer (53) being electrically isolated from the radial track (52.2).

2. Thermal detector (1) according to claim 1, wherein the peripheral contact area (53p) has an inner border (53pi) parallel and concentric to an outer border (53ce) of the central contact area (53c).

3. Thermal detector (1) according to claim 2, wherein the inner edge (53pi) of the peripheral contact area (53p) and the outer border (53ce) of the central contact area (53c) are circular.

4. Thermal detector (1) according to claim 3, wherein the thermistor layer (53) has a circular shape and is concentric to the inner edge (53pi) of the peripheral contact area (53p) and to the outer edge (53ce) of the central contact area (53c).

5. Thermal detector (1) according to any one of claims 1 to 4, wherein the first electrode (51) has an inner edge (51i) parallel and concentric to an outer edge (52.1e) of the central part (52.1) of the second electrode (52).

6. Thermal detector (1) according to claim 5, wherein the inner edge (51) of the first electrode (51) and the outer edge (52.1e) of the central part (52.1) of the second electrode (52) are circular.

7. Thermal detector (1) according to any one of claims 1 to 6, wherein the absorbing membrane (50) has an insulating thin layer (43) located between the thermistor layer (53) and the radial track (52.2) of the second electrode (52).

8. Thermal detector (1) according to any one of claims 1 to 7, wherein the central part (52.1) of the second electrode (52) is located at the center of the absorbing membrane (50).

9. Thermal detector (1) according to any one of claims 1 to 8, wherein the thermistor layer (53) and the electrodes (51, 52) are configured such that a parameter Z = R xh / p is less than or equal to 0.3, where R is the electrical resistance of the thermistor layer (53), h its average thickness, and p the resistivity of the material of the thermistor layer (53).

10. Thermal detector (1) according to any one of claims 1 to 9, wherein the first electrode (51) and the radial track (52.2) of the second electrode (52) are coplanar, the first electrode (51) extending in an open loop which includes an opening (51.1) in which the radial track (52.2) extends.

11. Thermal detector (1) according to claim 10, wherein the thermistor layer (53) has an angular notch (53.1) located perpendicular to the opening (51.1) of the first electrode (51).

12. Thermal detector (1) according to any one of claims 1 to 9, wherein the first electrode (51) and the radial track (52.2) of the second electrode (52) are not coplanar, the first electrode (51) extending in a closed loop, the radial track (52.2) being vertically separated from the first electrode (51) by an intercalated insulating thin layer (44).

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