Residual current detection device powered by current extraction from a power line

Abstract

The present invention relates to a residual differential current detection device corresponding to the difference between the current flowing in a phase P supply line and the current flowing in a neutral N supply line. The device is configured to operate: - in a first operating mode when the voltage between the phase supply line and the neutral supply line is greater than a predefined voltage; and - in a second operating mode when the voltage between the phase supply line and the neutral supply line is less than the predefined voltage. In the first operating mode, the detection portion of the device is powered by the voltage present between the phase supply line and the neutral supply line.In the second operating mode, the detection part of the device is powered from a current flowing in the phase supply line and / or in the neutral supply line. Figure for the abbreviation: Figure 13.

Description

Title of the invention: RESIDUAL DIFFERENTIAL CURRENT DETECTION DEVICE POWERED BY CURRENT EXTRACTION ON A SUPPLY LINE technical field

[0001] The present invention relates to the general field of power supply devices for providing electrical energy to an electronic circuit. In particular, and more specifically, the invention relates to a power supply device for a residual current detection device (such a detection device is known by the acronym RCD for "residual current device", or also by the term "residual current switch"). Prior art

[0002] A residual current device (RCD) includes a sensor enabling the detection of a leakage current corresponding, for example, in a single-phase system, to the difference between the current flowing in the phase and the current flowing in the neutral.

[0003] This sensor generally takes the form of a magnetic circuit comprising a first coil that generates a first electromagnetic field from the current flowing in the phase, a second coil that generates a second electromagnetic field from the current flowing in the neutral, and a third coil that generates a current from the resulting electromagnetic field. When there is a difference between the current flowing in the phase and the current flowing in the neutral, the resulting electromagnetic field generates a current (and / or a voltage) in the third coil. This current (and / or voltage) can then power an electromechanical device whose tripping causes the electrical circuit to break. In such a case, the residual current device is entirely passive.

[0004] There are also DDR devices comprising an active sensor allowing, for example, monitoring or predictive maintenance of the system. The device is then powered directly by the mains voltage.

[0005] However, the European standard requires that RCDs be functional regardless of the supply voltage. Furthermore, the constraints are very stringent because the device must withstand a very wide range of current values, for example, from ten milliamperes to several amperes. The EN61008 standard and its annexes describe all the specifications and constraints for the DDR devices in Europe. Currently, there are no active DDR devices that meet all of these specifications.

[0006] In another area, patent application FR3092444A1 describes a home automation electronic control device for a luminaire. The device is powered by a leakage current when the luminaire is switched off. The device's design allows operation independent of the supply voltage, but it requires two poles to function. Description of the invention

[0007] The present invention aims to remedy all or part of the drawbacks of the prior art, in particular those set out above, by proposing a current extraction power supply device intended to be connected in series on a single pole of an electrical power source (for example a single supply line of a single-phase electrical network).

[0008] To this end, the present invention proposes a residual differential current detection device comprising: - a first current extraction power supply device suitable for connection in series to a neutral supply line of an electrical energy source in a single-phase or polyphase electrical network; and - at least one second current extraction power supply device suitable for being connected in series on a phase supply line of the single-phase or polyphase electrical network energy source.

[0009] Each power supply device comprises: - at least one power transistor intended to be connected in series on the respective power supply line, said power transistor having an input electrode, an output electrode, and a control electrode, the input and output electrodes of the power transistor being configured to be connected on the respective power supply line, - a voltage booster configured to convert a voltage VDS across the power transistor, i.e., a voltage VDS available between the input and output electrodes of the power transistor, into a first output voltage Vout i, Vout 2 greater than the voltage VDS across the power transistor, - a voltage booster control module configured to stabilize the first output voltage Vout 1, Vout 2 at a reference value V out_set, - a regulation module configured to control the power transistor, via the control electrode.

[0010] The detection device further comprising, for each pair consisting of a second power supply device and the first power supply device: • a system for detecting the residual differential leakage current corresponding to the difference between the current flowing in the respective phase supply line and the current flowing in the neutral supply line, the detection system being powered by a supply voltage Vaiim; and • an auxiliary power supply module powered by the respective phase supply line and the neutral supply line, the auxiliary power supply module being configured to deliver a second output voltage VoutpN as well as an information signal PN0K representative of whether a voltage between the phase supply line and the neutral supply line is greater or less than a predefined voltage,

[0011] the detection device 300 being configured to operate, for each pair consisting of a second power supply device and the first power supply device: • when the voltage between the respective phase supply line and the neutral supply line is greater than the predefined voltage, in a first operating mode in which the supply voltage Vaiim of the detection system is a function of the second output voltage VoutPN and in which the regulation modules, based on the information signal, control the respective power transistors to put them into saturation mode; • when the voltage between the respective phase supply line and the neutral supply line is less than the predefined voltage, in a second operating mode in which the supply voltage VaUm of the detection system is a function of at least a first output voltage Vout1, Vout2 and in which the regulation modules, based on the information signal, control the respective power transistors to limit the output voltages Vout1, Vout2 around a first threshold value

[0012] Thus, in the first operating mode, the detection section of the device is powered by the voltage present between the phase supply line and the neutral supply line. The power transistors are forced into saturation, and their electrical power dissipation is thus minimized.

[0013] Conversely, in the second operating mode, the detection part of the device is powered from the current flowing in the supply line of phase and / or in the neutral supply line. Electrical energy is thus drawn via the power transistors through which the current flows. More specifically, in the second operating mode, the configuration of the power supply devices allows for generating a power supply by introducing a relatively low voltage drop in series on a single supply line. Such a power supply device is functional regardless of the voltage of the power source to which the supply line is connected.

[0014] The power transistor makes it possible, for example, to generate a voltage drop of between a few millivolts (mV) and about twenty volts (V) from which it is possible to extract power to supply an electronic system, such as for example an active sensor of an DDR device.

[0015] Regulating the voltage across the power transistor to a constant value is not desirable because it would lead to particularly poor energy efficiency and a large amount of power that would be difficult to dissipate when a high current flows through the line. A voltage booster advantageously provides a voltage gain for an equivalent power input. The voltage booster thus reduces the voltage across the transistor, and therefore also the power that must be dissipated in the transistor.

[0016] The voltage booster control module manages the variations in the current flowing in the supply line to maintain a stable output voltage Vout.

[0017] The idea is to draw only the useful power from the power supply line. The useful power is calculated in the form P = VDs * U (Pu is the useful power, VDs is the voltage across the transistor, and iL is the current flowing on the power supply line, i.e., the current drawn by the equipment connected downstream to the power supply line). The current iL is therefore not controllable; it is a given. The only parameter that can be adjusted to vary the collected power is the voltage VDS across the power transistor. The idea is then to regulate the voltage drop VDS so that VDS takes a value equal to Pu / iL. The voltage VDs is then variable depending on the current iL flowing on the line and the useful power Pu at each instant.The voltage booster and its control module then allow the variable VDs voltage to be converted into a constant supply voltage for the electronic system.

[0018] It should be noted that the voltage booster is not controlled in a conventional manner. Indeed, when the output voltage drops, the voltage gain of the voltage booster must be reduced, which is counterintuitive to those skilled in the art. For example, if a "Boost" type voltage booster is used, when As the output voltage drops, the duty cycle of the voltage booster should be decreased (whereas in a conventional control system, the duty cycle would be increased). This is because the input is not a voltage source but a current source. The lower the duty cycle, the higher the output voltage (VDS) rises, and the higher the input power (VDS x iL). We can refer to this as a "complemented" duty cycle for the voltage booster.

[0019] In the second operating mode, the power transistor regulation module is configured to close the power transistor when a significant current iL flows on the supply line and the first output voltage Vout i, Vout 2 exceeds the threshold value Voutjimit_i. When this occurs, the voltage booster and its control module reach their voltage gain limit, and the first output voltage Vout b Vout 2 exceeds the desired reference value Vout set. In the case of a Boost-type voltage booster, this voltage gain limit is related, in particular, to a threshold value of the duty cycle and also to losses that increase with gain. Generally speaking, the gain range of a voltage booster is not unlimited, and there is always a maximum gain that cannot be exceeded.Closing the power transistor, via a control electrode, allows a portion of the current iL flowing on the line to pass through the power transistor, thereby lowering the first output voltage Vout b Vout 2. Thus, the power transistor regulation module acts as a limiter of the first output voltage Vout b Vout 2. The action of the power transistor regulation module is particularly useful during startup, when the voltage booster is not yet powered / operational, or during a sudden and significant increase in the current iL flowing on the supply line.

[0020] In embodiments, in the first mode of operation and for at least one power supply device by current extraction, a power supply to at least one device among the voltage booster, the servo module and the regulation module is cut off.

[0021] Thus, the electrical energy consumption of the residual differential current detection device in the first operating mode is further reduced.

[0022] In particular embodiments, the voltage booster control module includes a proportional-integral controller.

[0023] The integral part of the voltage booster control module corrector makes it possible to improve the accuracy of the power booster regulation as a function of the current iL flowing on the supply line.

[0024] In particular embodiments, the power transistor regulation module includes a proportional controller without an integrator.

[0025] The absence of an integrator in the corrector of the power transistor regulation module gives it a high reaction speed.

[0026] In particular embodiments, the power supply device further includes a protection module allowing rapid clipping of the first output voltage Vout b Vout 2, when the first output voltage Vout b Vout 2 is greater than a second threshold value Voutjimit_2, by control of the power transistor via the control electrode.

[0027] The protection module prevents the first output voltage Vout b Vout 2 and / or the voltage VDs across the power transistor from exceeding the breakdown voltages of the circuit. Preferably, this protection module is a passive device that operates before any power supply is present. It is a very fast-triggering protection module to withstand overcurrents on the supply line. This is the case, for example, in the event of a short circuit on the line, or in the event of a high starting current, when the voltage booster and its control module, as well as the power transistor regulation module, are not yet operational.

[0028] It should be noted that the higher the voltage rating of the transistor, the more expensive it becomes. Therefore, it is advantageous to limit the value of the voltage drop VDS across the transistor.

[0029] In particular embodiments, the power supply device further includes a bypass diode allowing the voltage booster to be bypassed.

[0030] The bypass diode allows the voltage boost stage to be bypassed when the output capacitance is discharged and the circuit is not yet powered (at startup), or when the current iL flowing on the supply line is low and VDs= Pu / L is approaching the desired reference output voltage Vout_set (the voltage booster is then no longer necessary).

[0031] According to a second aspect, the invention relates to a residual differential current detection device comprising: - a first current extraction power supply device suitable for connection in series to a neutral supply line of an electrical energy source in a single-phase or polyphase electrical network; and - at least one second current extraction power supply device intended to be connected in series on a phase supply line (80) of the single-phase or polyphase electrical network power source.

[0032] Each power supply device comprises: - at least one first power transistor intended to be connected in series on the respective power supply line, - a first voltage booster configured to convert the voltage across the first power transistor into an output voltage higher than the voltage across the first power transistor, - at least one second power transistor intended to be connected in series on the respective power supply line in opposition to the first power transistor, - a second voltage booster configured to raise the voltage across the second power transistor to an output voltage higher than the voltage across the second power transistor, - a common servo module for the first and second voltage boosters, configured to stabilize the output voltage at a reference value, and - a regulation module configured to control the first power transistor and the second power transistor, via the respective control electrode of each power transistor.

[0033] The detection device further comprises, for each pair consisting of a second power supply device and the first power supply device: - a system for detecting the residual differential leakage current corresponding to the difference between the current flowing in the respective phase supply line and the current flowing in the neutral supply line, the detection system being powered by a supply voltage Vaiim; and - an auxiliary power supply module powered by the respective phase supply line and the neutral supply line, the auxiliary power supply module being configured to deliver a second output voltage VoutpN as well as an information signal PN0K representative of the fact that a voltage between the phase supply line and the neutral supply line is greater or less than a predefined voltage,

[0034] The detection device being configured to operate, for each pair consisting of a second power supply device and the first power supply device: - when the voltage between the respective phase supply line and the neutral supply line is greater than the predefined voltage, in a first operating mode in which the supply voltage Vaiim of the detection system is a function of the second output voltage VoutPN and in which the regulation modules, based on the information signal, control the respective first and second power transistors to put them into saturated mode; - when the voltage between the respective phase supply line and the neutral supply line is less than the predefined voltage, in a second operating mode in which the supply voltage V aUm of the detection system is a function of at least a first output voltage Vout i, Vout 2 and in which the regulation modules, on the basis of the information signal, control the first power transistors and the respective second power transistors to limit the output voltage Vout 1, Vout 2 around a first threshold value Voutjimit_i.

[0035] Thus, in the second operating mode, each of the first and second power transistors alternately provides a positive input voltage to the power booster with which it is associated, depending on whether the current iL is positive or negative. Such arrangements make it possible to take advantage of a negative current iL while sharing most of the functions, in particular the control of the voltage boosters and the regulation of the power transistors.

[0036] In embodiments, in the first mode of operation and for at least one power supply device by current extraction, a power supply to at least one device among the first voltage booster, the second voltage booster, the servo module and the regulation module is cut off.

[0037] Thus, the electrical energy consumption of the residual differential current detection device in the first operating mode is further reduced.

[0038] In particular embodiments, the power supply device further comprises a first voltage comparator to close the first power transistor when the voltage across its terminals is negative and a second voltage comparator to close the second power transistor when the voltage across its terminals is negative.

[0039] Such arrangements make it possible to reduce the voltage drop, and therefore the losses related to the unexploited negative polarity, for the transistor for which the voltage across its terminals is negative.

[0040] Such arrangements allow for the inclusion, within the residual current detection device, of an active system powered by the power supply device(s). This could be, for example, a fault current detection system for implementing monitoring or predictive maintenance. Brief description of the drawings

[0041] Other features and advantages of the invention will become apparent from the following description, given by way of non-limiting example, and made with reference to the accompanying figures, among which:

[0042] [Fig-1] schematically represents an example of a power supply device according to the invention.

[0043] [Fig.2] schematically represents a power transistor and its different connection terminals.

[0044] [Fig.3] schematically represents another example of a power supply device according to the invention.

[0045] [Fig.4] schematically represents a detailed example of the embodiment of a device power supply according to the invention.

[0046] [Fig.5] is a graph representing the evolution of the voltage VDS across the terminals of the power transistor and output current iout as a function of the value of the current iL flowing on the supply line.

[0047] [Fig.6] schematically represents the transfer function of the control module (Evolution of the voltage VGs applied to the control electrode of the power transistor as a function of the output voltage Vout).

[0048] [Fig.7] corresponds to the graph of [Fig.5] to which is added a representation of the VGs voltage controlled by the regulation module.

[0049] [Fig.8] corresponds to the graph of [Fig.5] to which is added a representation of the VDS voltage limitation by the protection module.

[0050] [Fig.9] is a graph representing the evolution over time of the tension of output Vout, of the voltage VDs across the terminals of the power transistor and of the voltage VGS applied to the control electrode of the transistor in a scenario where the current iL of the supply line is very high at startup and then decreases subsequently.

[0051] [Fig. 10] schematically represents another example of an embodiment of a power supply device according to the invention, with two power transistors placed in reverse relative to each other.

[0052] [Fig. 11] schematically represents another example of an embodiment of a power supply device similar to that shown in [Fig. 10].

[0053] [Fig. 12] schematically represents an example of the implementation of a residual differential current detection device in a single-phase system.

[0054] [Fig. 13] schematically represents another example of the implementation of a residual differential current detection device in a single-phase system.

[0055] In these figures, identical reference numerals from one figure to another designate identical or analogous elements. For clarity, the elements shown are not necessarily to the same scale, unless otherwise stated.

[0056] Detailed description of particular embodiments

[0057] Figure 1 schematically represents a power supply device 100 according to the invention. The power supply device 100 is connected in series to a single pole 80 of an electrical power source. In the example considered, the power supply device 100 is connected in series to a supply line 80 of a single-phase electrical network. The supply line 80 corresponds, for example, to the phase or neutral of said single-phase electrical network.

[0058] Figure 1 schematically illustrates the main components of the power supply device 100. The functions of these different components are described below.

[0059] The power supply device 100 includes a power transistor 10 connected in series on the power supply line 80. The power transistor 10 generates a voltage drop VDS from which power can be extracted to supply an electronic system. In the example considered, the electronic system is an active sensor of an RCD (Remote Control Device). The voltage VDS available across the power transistor 10 is, for example, between a few millivolts (mV) and ten volts (V).

[0060] As illustrated in [Fig.2], the power transistor 10 comprises an input electrode 11 connected to an input terminal D, an output electrode 12 connected to an output terminal S, and a control electrode 13 connected to a control terminal G. The term "transistor voltage" refers to the difference between the voltage at the input electrode 11 and the voltage at the output electrode 12. In other words, the "transistor voltage" corresponds to the difference between the voltage VD at terminal D and the voltage Vs at terminal S (VDS = VD - Vs).

[0061] In the example considered, the power transistor 10 corresponds to a metal-oxide semiconductor field-effect transistor (MOSFET). The input electrode 11 then corresponds to the transistor's drain, the output electrode 12 to the transistor's source, and the control electrode 13 to the transistor's gate. In such a case, the voltage VDs across the transistor corresponds to the voltage difference between the transistor's drain and source.

[0062] However, nothing prevents the use of another type of transistor, for example a bipolar transistor (in which case the input electrode 11 corresponds to the collector of the transistor, the output electrode 12 corresponds to the emitter of the transistor, and the control electrode 13 corresponds to the base of the transistor).

[0063] According to yet another example, the power transistor 10 can correspond to an insulated gate bipolar transistor (IGBT for "Isolated Gate Bipolar Transistor" in the Anglo-Saxon literature).

[0064] As illustrated in [Fig.2], the transistor can be associated with a diode 14 mounted in reverse between the input terminal 11 and the output terminal 12.

[0065] In certain embodiments, a plurality of power transistors 10 are connected in parallel, with the input electrodes 11 of each power transistor 10 connected together and the output electrodes 12 of each power transistor 10 connected together. Such a parallel connection reduces the equivalent resistance seen between the input electrodes 11 and output electrodes 12, and thus reduces the power consumption of the power transistors 10 when they are in saturation. Furthermore, to control the various power transistors 10 in a common manner, the control electrodes 13 of each power transistor 10 are also connected together.

[0066] Returning to [Fig. 1], the power supply device 100 also includes a voltage booster 20 configured to convert the voltage VDS available across the power transistor 10 into an output voltage Vout greater than VDs. The voltage booster 20 advantageously provides a voltage gain for an equivalent power input. The voltage booster thus reduces the voltage VDS across the power transistor 10, and therefore also the power that must be dissipated in it.

[0067] The power supply device 100 also includes a servo module 30 for the voltage booster 20. The servo module 30 manages variations in the current iL flowing in the supply line in order to maintain a stable output voltage Vout. Indeed, the network load is variable, and consequently, the current iL flowing in the supply line 80 is also variable. The servo module 30 thus regulates the voltage drop VDS, so that the collected power Pu = VDs * û corresponds to the required output power.

[0068] The voltage booster 20 and its control module 30 thus make it possible to convert the variable voltage VDS across the transistor into a substantially constant voltage to supply the electronic system through an output capacitor 71. In the example considered, the voltage booster 20 and its control module 30 aim to provide an output voltage Vout stabilized around a reference value Vout set equal to 10V.

[0069] The servo module 30 of the voltage booster 20 may advantageously include a proportional and integral effect controller in order to improve accuracy of the regulation of the voltage booster 20 as a function of the current iL flowing on the supply line.

[0070] Optionally, the power supply device 100 may also include a regulation module 40 to control the power transistor 10, via its control electrode 13, in order to limit the output voltage Vout around a first threshold value Voutjimit_i. In the example considered, the first threshold value Voutjimit_i is equal to 12V.

[0071] The regulation module 40 is configured to close the power transistor 10 when the output voltage Vout exceeds the threshold value Voutjimit_i when a significant current iL flows on the supply line 80. Closing the power transistor 10 allows some of the current iL to pass through it, thereby reducing the output voltage Vout. The regulation module 40 acts as a limiter of the output voltage Vout. The action of the regulation module 40 is particularly useful during startup, when the voltage booster 20 is not yet powered / operational, or during a sudden and significant increase in the current iL flowing on the supply line 80.

[0072] Preferably, the regulation module 40 of the power transistor 10 includes a proportional controller without integral part in order to promote the responsiveness of the regulation module 40.

[0073] Optionally, the power supply device 100 may also include a protection module 50 allowing rapid clipping of the output voltage Vout when it is greater than a second threshold value Voutjimit_2, by control of the power transistor 10 via the control electrode 13. In the example considered, the second threshold value Voutjimit_2 is equal to 15V.

[0074] The protection module 50 is designed to absorb overcurrents on the supply line, for example, in the event of a short circuit, or in the event of a start-up with a high current from the outset, when the voltage booster 20 and its control module 30, as well as the regulation module 40 of the power transistor 10, are not yet operational.

[0075] Optionally, and as illustrated in [Fig. 3], the power supply device 100 may also include a voltage regulator 73 to provide, via another capacitor 72, a voltage Vdd with a value different from the output voltage Vout. The voltage Vdd can, in particular, be used to power the control module 30 and / or the regulation module 40 (rather than powering them directly from the output voltage Vout).

[0076] It can be noted that two limit values ​​must be taken into account for the power supply device 100.

[0077] First, it is necessary to consider the maximum voltage VDSmax that the power transistor 10 can withstand (or the maximum voltage drop that is permitted on the supply line 80). The higher the voltage rating of the power transistor 10, the more expensive it becomes. It is therefore advantageous to limit this voltage VDSmax to a relatively low value, for example, 20V. The role of the protection module 50 is, in particular, to ensure that the voltage across the power transistor 10 remains below this value VDSmax.

[0078] On the other hand, a minimum voltage VDsmin must be taken into account below which the voltage booster 20 will not be able to function correctly. This minimum voltage VDSmin must not, however, be too high in order to limit the power iLmax x VDSmin to be dissipated when a maximum current iLmax flows on the supply line 80 under nominal operating conditions.

[0079] Four levels of operation can be distinguished in steady state.

[0080] A first level of operation corresponds to the case where the current iL that flows The current on line 80 is sufficiently low that the voltage booster 20 is not required. This is the case when iL < P( / Vout set). In this case, the current iL should be transferred directly to the output capacitor 71.

[0081] A second level of operation corresponds to the case where Pu / Vout set < iL < Pu / VDSmin* In this case, the control module 30 regulates the voltage Vout to the reference value Vout set by varying the voltage VDS across the power transistor 10.

[0082] A third operating level corresponds to the case where iL > Pu / VDsmm. In this case, Vout > Vout set is also true. The control module 30 then reaches its limit in terms of duty cycle (in other words, the maximum gain of the voltage booster 20 is reached). The regulation module 40 then comes into play by controlling the power transistor 10, via the control electrode 13, to limit the output voltage Vout around a first threshold value Voutjimit_b. Indeed, in the case of a MOSFET-type power transistor 10, the regulation module 40 typically acts on the gate voltage of the power transistor 10, which has the effect of adjusting the current flowing through it and thus adjusting the voltage VDS. The voltage VDS, which is amplified by the maximum gain of the voltage booster 20, leads to an output voltage Vout close to Voutjimit_i thanks to the action of the regulation module 40.It should be noted that this control loop may exhibit a static error, particularly in the absence of an integral type correction to limit the latency of the control module 40.

[0083] A fourth operating level corresponds to the case where the output voltage Vout becomes greater than the second threshold value Voutjimit2 (for example, if the regulation module 40 is not functional). In this case, the protection module 50 must come into play, as ultimate transient protection, to prevent the VDS voltage from reaching a value that would destroy the power transistor 10.

[0084] It can be noted that if the system conditions are such that we are always in the second operating level, then the power transistor 10, the voltage booster 20 and the control module 30 are sufficient to realize the power supply device 100.

[0085] On the other hand, if the system conditions are such that one can sometimes find oneself in the third or fourth level of operation, then it is desirable that the power supply device 100 also include the regulation module 40 and / or the protection module 50.

[0086] Fig. 4 schematically represents an example of an embodiment of a power supply device 100 as described previously with reference to Fig. 1.

[0087] In the example considered, and as illustrated in [Fig. 4], the voltage booster 20 is similar to a switched-mode power supply. In the example considered and illustrated in [Fig. 4], a boost-type voltage booster 20 is presented. The voltage booster 20 comprises an inductor 21, a diode 22, a switching transistor forming a switch 23, and a capacitor 24. The operating principle is as follows. During an energy storage phase, when the switch 23 is closed, energy is stored magnetically in the inductor 21. The diode 22 is then reverse-biased. During an energy transfer phase, when the switch 23 is open, the diode 22 becomes forward-biased and the energy stored in the inductor 21 is transferred to the output capacitor 71 with a boost effect. The switch 23 is periodically switched from the closed position to the open position following a duty cycle a.The duty cycle α corresponds to the ratio between the time the switch is closed and the time of a complete switching cycle (a complete switching cycle is the sum of the time the switch is closed and the time it is open). This results in a voltage gain: the output voltage Vout of the voltage booster 20 is greater than the input voltage VDS. The value of the voltage gain produced by the voltage booster 20 depends on the value of the duty cycle α.

[0088] The capacitor 24 filters the input voltage with respect to the switching frequency of the boost converter circuit. Indeed, by considering the current iL as a current source, and if the power transistor 10 is open (second operating level), then, without the capacitor 24, each opening of the switch 23 would result in a significant increase in the voltage VDS. By choosing a capacitor 24 with an impedance lower than the impedance of the inductor 21 (by (example five times weaker, or even twenty times weaker), we limit the ripple of the VDS voltage to the switching frequency.

[0089] The voltage booster 20 can operate in continuous conduction mode (in which case the current through the inductance 21 never cancels out) or in discontinuous conduction mode (in which case the current through the inductance 21 cancels out during part of the switching period).

[0090] The larger the duty cycle α (i.e., the larger the conduction time of switch 21 relative to the switching period), the greater the gain of the voltage booster 20. In the example considered, the voltage booster 20 is configured so that a maximum duty cycle αmax provides a gain on the order of 100 to 1000. Thus, for a desired reference voltage Vout set around 10V, the power transistor 10 will only experience a voltage drop VDs min on the order of 10mV to 100mV. Consequently, the power dissipated in the power transistor 10 is lower when the current iL is greater than Pu / VDSmin. The maximum duty cycle αmax is, for example, between 98% and 99.9%.

[0091] The voltage booster 20 is not regulated in a conventional manner. Indeed, when the output voltage Vout falls below the reference value Vout_set, the gain of the voltage booster 20 must be decreased, and therefore, in this case, the duty cycle α of the voltage booster 20 must be decreased (whereas in a typical application of a voltage booster, the duty cycle would be increased, based on the assumption that the input source is a voltage source with no current limitation relative to the demand). This is because the input is not a voltage source but a current source, which is not infinite. On the contrary, the more current is drawn, the more the voltage VDS collapses, and the less power can be drawn. The output current requirement is relatively stable, but the available upstream current iL varies.The system must therefore be capable of inverse regulation, that is, not increasing the input current when the output voltage drops, but on the contrary decreasing it so as to allow the voltage VDS to rise and increase the useful power VDS x iL. The lower the duty cycle, the higher the voltage VDS is allowed to rise and the higher the input power VDS x iL is drawn.

[0092] The servo module 30 regulates the output voltage Vout by controlling the voltage booster 20. To do this, the servo module 30 controls the duty cycle value α as a function of the output voltage Vout to stabilize the output voltage Vout at the reference value Vout set. As illustrated in [Fig. 4], the servo module 30 includes a pulse-width modulator 32 (PWM modulator). In the example considered, the servo module 30 also includes an inversion module. State inversion module 33 is used to account for the "reverse" operation of the voltage booster 20. Indeed, if the modulator 32 is a conventional PWM modulator, then increasing its control voltage also increases the modulator's duty cycle. According to the invention, the opposite behavior must be achieved. The idea is to complement the output of the PWM modulator with the state inversion module 33 (a high state is transformed into a low state and vice versa). The duty cycle is thus also complemented (a duty cycle close to 100% becomes close to 0% and vice versa).

[0093] The control module 30 preferably includes an integrator 31 and behaves as a proportional / integral controller (PI controller).

[0094] It should be noted that the example of a control module 30 described above is not limiting. The control module 30 could, in particular, take into account other measures to improve its response time and stability, such as, for example, a measurement of the voltage VDS and the current flowing through the switching transistor forming the switch 23.

[0095] In the first operating stage (iL < Pu / Vout_set), the bypass diode 25 allows the voltage booster 20 to be bypassed. The voltage VDS across the power transistor 10 is then close to the output voltage Vout. In this case, the output capacitor 71 is directly charged via the bypass diode 25. The maximum power output can be achieved by collecting iL x VDSmax.

[0096] In the second operating level (Pu / Vout set < iL < Pu / VDSmin), the servo module 30 regulates the voltage Vout by controlling the gain of the voltage booster 20.

[0097] Fig. 5 schematically represents the evolution of the voltage VDS across the terminals of the power transistor 10 (curve 504) and of the output current iout (curve 505) as a function of the value of the current iL flowing on the supply line 80.

[0098] Part 501 of the graph corresponds to the first operating level during which the servo module 30 is not yet functional (a = 0) and the current iL is sufficiently low that the power transistor 10 does not need to be closed.

[0099] Part 502 of the graph corresponds to the second operating level. The gain value of the voltage booster 20 increases progressively as the current iL increases, until it reaches the maximum gain value of the voltage booster 20. In the context of a Boost-type voltage booster, the duty cycle value a increases progressively as the current iL increases, until it reaches the maximum value amax corresponding to the limits of the voltage booster 20. The value of the voltage VDs across the transistor of power gradually decreases as the value of the duty cycle increases, that is, as the converter gain increases.

[0100] When the available current exceeds a certain threshold (iL > P( / VDSmin), the voltage booster 20 is blocked in open loop with a maximum gain corresponding to a maximum duty cycle amax. This corresponds to the third operating level and to part 503 of the graph shown in [Fig. 5].

[0101] The output voltage Vout is then a multiple of the voltage VDS and exceeds the target reference value Vout_set. It is then possible to control the voltage VDs by a regulation module 40 which regulates the output voltage Vout by acting on the voltage VGs applied to the control electrode 13 (the gate) of the power transistor 10. Applying a voltage VGS to the control electrode 13 closes the power transistor 10 and thus allows a portion of the current iL to flow through the power transistor 10 (current iT, with iT = iL - Pu / VDs). The higher the voltage VGS, the higher the current iT flowing through the power transistor 10. Alternatively, for example in the case of a current-controlled transistor, such as a bipolar transistor, the control is then achieved by current according to the same control law.

[0102] The control module 40 limits the output voltage Vout around the first threshold value Voutjimit_i. The control module 40 activates when the voltage Vout exceeds Vout set, and more specifically when the voltage Vout exceeds Voutjimit_i (the first threshold value Voutjimit_i is greater than the reference value Vout set). For example, the control module 40 is configured to maintain the voltage Vout at a value between ±15% of the first threshold value Voutjimit_i (or even ±30% of the first threshold value Voutjimit_i). In the example considered, the control module 40 includes an operational amplifier subtractor 41 whose transfer function is shown in [Fig. 6]. The operational amplifier subtractor 41 has a gain K compatible with the voltage range of VGS.The regulation module 40 is configured (notably via the choice of the value Voutjimit_i) to activate when the voltage booster 20 is operating at its maximum gain.

[0103] Preferably, the control module 40 includes a proportional controller without an integrator to ensure a high response time. The control module 40 must be able to quickly manage variations in the current iL flowing in the supply line 80.

[0104] The action of the regulation module 40 of the power transistor 10 can be particularly useful at system start-up, when the voltage booster 20 is not not yet functional, or during a sudden and significant increase in the iL current flowing on the 80 supply line.

[0105] Fig.7 reproduces the graph illustrated in Fig.5 on which is added a representation of the voltage VGS (curve 506) controlled by the regulation module 40 at the third level of operation (part 503).

[0106] The protection module 50 has the role of limiting the output voltage Vout when it becomes greater than the second threshold value Voutjimit2 (in particular when the regulation module 40 is not yet functional, for example at the start of the system if the current iL is important) by acting on the voltage VGs applied to the control electrode 13 (the gate) of the power transistor 10.

[0107] In the example considered, the protection module 50 consists of a combination of a Zener diode 51 and a diode 52. When the output voltage Vout exceeds the second threshold value Voutjimit2, the protection module 50 applies a voltage VGS that closes the power transistor 10. The idea is that this ultimate protection only acts when Vout exceeds Voutjimit_2, that is, when the regulation module 40 is no longer able to limit the output voltage around Voutjimit_i (for example, at system startup or during a sudden current spike iL). This is a last resort protection, taking over the closing of the power transistor 10 if the regulation module 40 has not had time to act. Once the regulation module 40 has resumed control, this protection no longer has any effect.

[0108] [Fig.8] reproduces the graph illustrated in [Fig.5] on which is added a representation of the limitation of the voltage VDs (curve 507) by the protection module 50. The curve 508 represents the voltage VGS.

[0109] Fig. 9 schematically illustrates the evolution over time of the output voltage Vout (curve 609), the voltage VDs across the power transistor 10 (curve 610) and the voltage VGS applied to the gate of the power transistor 10 (curve 611) in a scenario where the current iL (curve 612) flowing on the supply line 80 is particularly high at startup and then decreases subsequently.

[0110] Part 601 of the graph shown in [Fig. 9] illustrates the sharp increase in the voltage Vout and the voltage VDs when the current iL suddenly reaches a high value. When the voltage Vout exceeds the second threshold value Voutjimit_2, the protection module 50 activates by applying a non-zero voltage VGS to the gate of the power transistor 10, thus clipping the voltages Vout and VDS, as illustrated in part 602 of the graph. Part 603 of the graph corresponds to the moment when the regulation module 40 activates: the voltage VGS increases, which reduces the voltage VDs. In part 604 of the graph, the voltage VDs has reached its minimum value VDSmin. The voltage Vout gradually decreases until The first threshold value Voutjimit_i is reached. The control module 40 maintains the voltage Vout at the first threshold value Voutjimit_i as long as the current iL remains high, as illustrated in section 605 of the graph. In section 606 of the graph, the current iL gradually decreases. The voltage Vout also decreases until it reaches the reference value Vout_set. The voltage VGs is also downward controlled by the control module 40. When the servo module 30 of the voltage booster 20 becomes operational (for example, in section 604 of the graph), it remains locked with a maximum duty cycle value amax as long as the voltage Vout is greater than the reference value Vout_set.When the output voltage Vout falls below the reference value Vout_set, as shown in parts 607, 608, and 609 of the graph, the control module 30 regulates the voltage booster 20 by changing the duty cycle α to maintain the output voltage Vout close to the reference value Vout_set. For example, as illustrated in part 608 of the graph, when the current iL decreases, the duty cycle α decreases to allow the voltage VDS across the power transistor 10 to rise.

[0111] Figure 10 represents another embodiment of a power supply device 200 according to the invention. The power supply device 200 advantageously comprises two power transistors 10a and 10b intended to be connected in series on a single power supply line 80, as well as two voltage boosters 20a and 20b. The first power transistor 10a and the second power transistor 10b are connected in opposition (reverse) with respect to each other.When the voltage VDsa across power transistor 10a is positive, the voltage booster 20a converts VDSa into an output voltage Vout greater than VDsa. When the voltage VDsb across power transistor 10b is positive, the voltage booster 20b converts VDSb into an output voltage Vout greater than VDSb. Thus, each of the two power transistors alternately provides a positive input voltage to the power booster to which it is connected, depending on whether the current iL is positive or negative. A control module 30, common to both voltage boosters 20a and 20b, stabilizes the output voltage Vout at a reference value Vout_set according to the same operating principles as those detailed above with reference to Figures 1 to 9.

[0112] In certain embodiments, a plurality of first power transistors 10a are connected in parallel, the input electrodes 11 of each first power transistor 10a being connected together, the output electrodes 12 of each first power transistor 10a being connected together. Similarly, in certain modes In this implementation, a plurality of second power transistors 10b are connected in parallel, with the input electrodes 11 of each second power transistor 10b connected together, and the output electrodes 12 of each second power transistor 10b connected together. This parallel connection reduces the equivalent resistance seen between the input electrode 11 and the output electrode 12, and therefore reduces the power consumption of the power transistors 10a and 10b when they are in saturation. Furthermore, to control the first and second power transistors 10a and 10b in a common manner, the control electrodes 13 of each first power transistor 10a are also connected together. Similarly, the control electrodes 13 of each second power transistor 10b are also connected together.

[0113] As illustrated in [Fig.10], the power supply device 200 may further include a regulation module 40 common to the two power transistors 10a and 10b to limit the output voltage Vout around a threshold value Voutjimit _i according to the same operating principles as those detailed above with reference to the regulation module 40 of Figures 1 to 3.

[0114] As illustrated in [Fig.10], the power supply device 200 may further include a protection module 50 common to the two power transistors 10a and 10b to limit the output voltage Vout below a threshold value Voutjimit_2 according to the same operating principles as those detailed above with reference to the protection module 50 of Figures 1 to 3.

[0115] Such arrangements make it possible to take advantage of a negative current iL while sharing most of the functions, in particular the control of the voltage boosters 20a and 20b and the regulation of the power transistors 10a and 10b.

[0116] It can be noted that the two power transistors 10a and 10b are controlled by the same voltage VGs, regardless of whether the voltage VDS across their terminals is positive or negative. Therefore, in principle, they are semi-conducting in the same way and exhibit the same voltage drop. However, the negative voltage VDS is not used.

[0117] Figure 11 represents another embodiment of a power supply device 200 according to the invention. The embodiment of Figure 11 is similar to that of Figure 10. In addition, the power supply device 200 comprises two voltage comparators 60a and 60b associated respectively with each power transistor 10a and 10b. The voltage comparator 60a is configured to close the power transistor 10a when the voltage VDSa across said power transistor 10a is negative. Similarly, the voltage comparator 60b is configured to close the power transistor 10b when the voltage VDSb across said power transistor 10b is negative.

[0118] This reduces the voltage drop and therefore the losses at the power transistor, for which the voltage across its terminals is negative. It is also possible to use the result of the comparison to inhibit the duty cycle control of the associated voltage booster.

[0119] The invention also relates to a residual current detection device (RCD device) comprising at least one 100 or 200 power supply device according to any one of the embodiments presented above.

[0120] In particular, [Fig. 12] schematically represents an example of an embodiment of a residual current detection device 300 in a single-phase system. The RCD 300 device comprises two power supply devices 100-1 and 100-2 similar to the power supply device 100 shown with reference to [Fig. 3]. Each power supply device 100-1, 100-2 is connected in series to a supply terminal 81, 82 of the single-phase system. In the example considered, the power supply device 100-1 is connected in series to the supply terminal 81 corresponding to neutral N, and the power supply device 100-2 is connected in series to the supply terminal 82 corresponding to phase P. Such arrangements are advantageous because they ensure that the detection system 90 remains powered even when one of the two supply terminals 81, 82 is disconnected.

[0121] The DDR 300 device includes a leakage current detection system 90, which detects the difference between the current flowing in the phase and the current flowing in the neutral. The detection system 90 is an active system powered by the supply devices 100-1 and 100-2, enabling the generation of a stabilized voltage Vdd. This system 90 can also be capable of controlling the opening of the phase and / or the neutral.

[0122] The DDR 300 device comprises a magnetic circuit including a first coil 91 which generates a first electromagnetic field from the current flowing in the neutral N, a second coil 92 which generates a second electromagnetic field from the current flowing in the phase P, and a third coil 93 which generates a current (and / or a voltage) from the resulting electromagnetic field. The three coils 91, 92, and 93 are wound around a ferromagnetic core 94. When there is a difference between the current flowing in the phase P and the return current flowing in the neutral N, the resulting electromagnetic field generates a current (and / or a voltage) in the third coil 93. The current (or voltage) generated by the third coil 93 can then be detected by the detection system 90.

[0123] Similar to the power supply device 100 shown with reference to [Fig. 3], each of the two power supply devices 100-1, 100-2 comprises a power transistor 10-1, 10-2, a voltage booster 20-1, 20-2, a servo module The voltage step-up module 30-1, 30-2, the regulation module 40-1, 40-2, the protection module 50-1, 50-2, and the voltage regulator 73-1, 73-2 are all part of the system. The transformer 75 ensures galvanic isolation between the two supply poles 81 and 82. The voltage regulator 74 provides a stabilized Vdd voltage to power the detection system 90.

[0124] Alternatively, the DDR 300 device may include two power supply devices 200 such as those described with reference to Figures 10 and 11. These devices have the advantage of operating regardless of the current polarity. It is thus possible to power the detection device 90 from at least one positive or negative current present on the phase or neutral conductor.

[0125] According to the embodiment illustrated in [Fig. 13], the DDR 300 device further comprises an auxiliary power supply module 130 supplied by the phase P power supply line 82 and the neutral N power supply line 81.

[0126] More specifically, the auxiliary power supply module 130 is configured to deliver:

[0127] - an output voltage VoutpN; and

[0128] - a PN0K information signal representative of the fact that a voltage between the line The voltage between the power supply line 82 (phase P) and the neutral supply line 81 (neutral N) is greater or less than a predefined voltage. Such a predefined voltage is, for example, equal to the nominal voltage supplied by the electrical power source between the power supply line 82 (phase P) and the neutral supply line 81 (neutral N), less e.g., 10% or 20%.

[0129] Such an auxiliary power supply module 130 is known in itself, it can be implemented e.g. in the form of the corresponding device described in patent document FR2752479B1.

[0130] Returning to [Fig. 13], the DDR 300 device is configured to operate:

[0131] - when the voltage between the phase P supply line and the supply line neutral N is greater than the predefined voltage, in a first operating mode in which the supply voltage Vaiim of the detection system 90 is a function of the second output voltage VoutPN and in which the regulation modules 40-1, 40-2, based on the information signal, control the respective power transistors 10-1, 10-2 to put them into saturation, e.g., by forcing the gate-source voltage VGs to a value greater than the threshold voltage for a MOS transistor, preferably a value much greater than the threshold voltage. According to some implementations, the supply voltage Vaiim of the detection system 90 is, e.g., directly the second output voltage VoutPN. According to another example, the The Vaiim supply voltage of the 90 detection system is a regulated version of the second output voltage VoutpN;

[0132] - when the voltage between the phase P supply line and the supply line neutral N is lower than the predefined voltage, in a second operating mode in which the supply voltage of the detection system 90 is a function of at least a first output voltage Vout b Vout 2 and in which the regulation modules 40-1, 40-2, based on the information signal, control the respective power transistors 10-1, 10-2 to limit the first output voltages Vout i, Vout 2 around a first threshold value Voutjimit_i. In such an operating mode, the power transistors 10-1, 10-2 are preferentially in linear mode. For example, the supply voltage Vaiim of the detection system 90 is a regulated (or stabilized) version of at least one of the first output voltages Vout b Vout 2. Such a regulated (or stabilized) version is e.g. the voltage Vdd as delivered by the voltage regulator 74 as described above in relation to [Fig. 12].According to another example, the supply voltage Vaiim of the detection system 90 is directly one or the other of the first output voltages Vout b Vout 2 depending on which of these two voltages is non-zero.

[0133] Thus, in the first operating mode, i.e., when the power supplied by the phase P supply line and the neutral N supply line is greater than the predefined voltage, the power consumption of the power transistors is minimized, as they are in saturation and therefore exhibit low resistance between their input electrodes 11 and output electrodes 12. The transistors in question cannot then develop a sufficient voltage between their input electrodes 11 and output electrodes 12 for the voltage booster 20 to provide initial output voltages Vout i, Vout 2, thus correctly powering the detection system 90. The auxiliary power supply module 130, powered by the phase P supply line and the neutral N supply line, then takes over to power the detection system 90 via the output voltage VoutPN. Conversely, in the second operating mode, i.e.When the power supplied by the phase P power line and the neutral N power line is lower than the predefined voltage, the auxiliary power supply module 130, powered by the phase P power line and the neutral N power line, is no longer necessarily able to supply the detection system 90 via the output voltage VoutPN. The power supply devices 100 then take over to supply the detection system 90 via at least one of the output voltages Vout2, according to the mechanism described previously.

[0134] According to some implementations, the DDR 300 device is configured for residual current detection in a polyphase (e.g., three-phase) system. In some of these implementations, the DDR 300 device comprises:

[0135] - a first 100 current extraction power supply device suitable for being connected in series on the neutral N supply line of the polyphase system under consideration; and

[0136] - at least one second 100 suitable current extraction power supply device to be connected in series on a respective phase P power supply line of a polyphase system energy source.

[0137] More specifically, the detection device 300 further comprises, for each pair consisting of a second power supply device 100 and the first power supply device 100, a residual differential leakage current detection system 90 and an auxiliary power supply module 130 as described above. In particular, the auxiliary power supply module 130 provides power to the detection system 90 associated with the pair in question in the first operating mode. Similarly, the auxiliary power supply module 130 delivers an information signal PNok, enabling the control modules 40-1, 40-2 associated with the pair to control the respective power transistors 10-1, 10-2 to bring them into saturation.

[0138] In this way, for each pair consisting of a second 100 power supply device and the first 100 power supply device, we find the first and second modes of operation as described above.

[0139] In certain embodiments, in the first operating mode and for at least one current-extraction power supply device 100, the power supply to at least one device among the voltage booster, the servo module, and the control module is cut off. Thus, the electrical energy consumption in the first operating mode is further reduced.

[0140] As described above, in certain implementations, the DDR 300 device includes power supply devices 200 such as those described with reference to Figures 10 and 11 instead of the power supply devices 100. It is thus possible to power the detection device 90 from at least one positive or negative current present on the phase or neutral conductor. In such implementations, the DDR 300 device can be configured for residual current detection in a single-phase or polyphase system. Thus, depending on the number of phases to be monitored, the DDR 300 device comprises:

[0141] - a first 200 current extraction power supply device, such as those described with reference to Figures 10 and 11, suitable for being connected in series on the neutral supply line N of the polyphase system under consideration; and

[0142] - at least one second 200 current extraction power supply device suitable to be connected in series on a respective phase P power supply line of a polyphase system energy source.

[0143] Furthermore, the DDR 300 device also includes, for each pair consisting of a second 200 power supply device and the first 200 power supply device, a residual differential leakage current detection system 90 and an auxiliary power supply module 130 as described above.

[0144] The DDR 300 device is thus configured, for each pair consisting of a second 200 power supply device and the first 200 power supply device, to operate:

[0145] - when the voltage between the respective phase P supply line and the line The neutral supply voltage N is higher than the predefined voltage in a first operating mode where the supply voltage Viim of the detection system 90 is a function of the second output voltage VoutpN, and where the regulation modules 40-1, 40-2, based on the information signal, control the respective power transistors 10a, 10b to saturate them. For example, the supply voltage Vaiim of the detection system 90 is directly the second output voltage VoutpN. In another example, the supply voltage Vaiim of the detection system 90 is a regulated version of the second output voltage VoutpN.

[0146] - when the voltage between the respective phase P supply line and the line The neutral supply voltage N is lower than the predefined voltage, in a second operating mode in which the supply voltage of the detection system 90 is a function of at least a first output voltage delivered by a first power supply device 200, and in which the regulation modules 40-1, 40-2, based on the information signal, control the respective power transistors 10a, 10b to limit the output voltages Vout b Vout 2 around a first threshold value Voutjimit_i. In such an operating mode, the power transistors 10a, 10b are preferentially in linear mode.

[0147] In certain embodiments, in the first operating mode and for at least one current-extraction power supply device, the power supply to at least one device among the first voltage booster, the second voltage booster, the servo module, and the control module is cut off. Thus, the electrical energy consumption in the first operating mode is further reduced.

[0148] The foregoing description clearly illustrates that, by its various features and their advantages, the present invention achieves the stated objectives. In particular, the The power supply device according to the invention makes it possible to draw current from one pole of an energy source under a low voltage drop, regardless of the voltage value of said pole.

[0149] More generally, it should be noted that the embodiments considered above have been described as non-limiting examples, and that other variants are therefore conceivable.

[0150] The invention has been described with a Boost type voltage booster 20. However, it is possible to use another type of voltage booster whose voltage gain is controllable, for example a "Flyback", "Buck-Boost", "Forward", or SEPIC (English acronym for "Single Ended Primary Inductor Converter") voltage booster, or a resonant type converter or a switched-capacitor type converter.

[0151] The invention has been described in the context of a power supply device used to electrically power an active detection system of an RCD for a single-phase electrical network. However, there is nothing to prevent the use of the power supply device according to the invention in other systems. In particular, the invention is applicable to a multi-phase electrical network, for example, a three-phase network. In this case, a 100 or 200 power supply device is, for example, arranged on each of the phases.

[0152] Also, the invention has been described in the case of an alternating mains voltage, but the power supply device could operate in the same way on a direct current voltage. For example, the power supply device according to the invention could be used to power a monitoring sensor for a photovoltaic installation.

Claims

1. Demands Residual current detection device (300) comprising: • a first current extraction power supply device (100) suitable for connection in series to a neutral supply line (81) of an electrical energy source in a single-phase or polyphase electrical network; and • at least one second current extraction power supply device (100) capable of being connected in series on a phase supply line (82) of the energy source of said single-phase or polyphase electrical network, in which each power supply device comprises: • at least one power transistor (10-1, 10-2) intended to be connected in series with the respective power supply line (81, 82), said power transistor (10-1, 10-2) having an input electrode (11), an output electrode (12), and a control electrode (13), the input electrode (11) and the output electrode (12) of the power transistor (10-1, 10-2) being configured to be connected to the respective power supply line (81, 82), • a voltage booster (20-1, 20-2) configured to convert a voltage (VDS) across the terminals of the power transistor (10-1, 10-2), i.e. a voltage (VDs) available between the input electrode (11) and the output electrode (12) of the power transistor (10-1, 10-2), into a first output voltage (Vout i, Vout 2) greater than the voltage (VDS) across the terminals of the power transistor (10-1, 10-2), • a servo module (30-1, 30-2) of the voltage booster (20-1, 20-2) configured to stabilize the first output voltage (Vout 1, Vout 2) at a reference value (VOut_set), • a control module (40-1, 40-2) configured to control the power transistor (10-1, 10-2), via the control electrode, the detection device (300) further comprising, for each pair consisting of a second power supply device and the first power supply device: • a system (90) for detecting the residual differential leakage current corresponding to the difference between the current flowing in the respective phase supply line and the current flowing in the neutral supply line, the detection system (90) being powered by a supply voltage (Vaiim); and • an auxiliary power supply module (130) supplied by the respective phase supply line and the neutral supply line, the auxiliary power supply module being configured to deliver a second output voltage (Vout PN) as well as an information signal (PN0K) representative of whether a voltage between the phase supply line and the neutral supply line is greater or less than a predefined voltage, the detection device (300) being configured to operate, for each pair consisting of a second power supply device and the first power supply device: • when the voltage between the respective phase supply line and the neutral supply line is greater than the predefined voltage, in a first operating mode in which the supply voltage (Vaiim) of the detection system (90) is a function of the second output voltage (Vout PN) and in which the regulation modules (40-1, 40-2), on the basis of the information signal, control the respective power transistors (10-1, 10-2) to put them into saturation mode; • when the voltage between the respective phase supply line and the neutral supply line is less than the predefined voltage, in a second operating mode in which the supply voltage (Vaiim) of the detection system (90) is a function of at least one first output voltage (Vout i, Vout 2) and in which the regulating modules (40-1, 40-2), based on the signal information, control the respective power transistors (10-1, 10-2) to limit the output voltages (Vout b Vout 2) around a first threshold value (Voutjimit_i).

2. Detection device according to claim 1, wherein, in the first mode of operation and for at least one current extraction power supply device (100), a power supply to at least one device among the voltage booster, the servo module and the regulation module is cut off.

3. Detection device according to claim 1 or 2, wherein the voltage booster control module includes an integral proportional controller.

4. A detection device according to any one of claims 1 to 3, wherein the power transistor regulation module comprises a proportional controller without an integrator.

5. Detection device according to any one of claims 1 to 4, wherein each power supply device further comprises a protection module (50-1, 10-2) enabling rapid clipping of the first output voltage, when the first output voltage is greater than a second threshold value (Voutjimit_2), by control of the power transistor via the control electrode.

6. Detection device according to any one of claims 1 to 5, wherein each power supply device further comprises a bypass diode (25) allowing the voltage booster to be bypassed.

7. Residual current detection device (300) comprising: • a first current extraction supply device (200) suitable for connection in series with a neutral supply line (81) of an electrical power source in a single-phase or polyphase electrical network; and • at least a second current extraction supply device (200) suitable for connection in series with a phase supply line (82) of the power source in the single-phase or polyphase electrical network, in which each power supply device comprises: • at least one first power transistor (10a) intended to be connected in series on the respective power supply line (81, 82), • a first voltage booster (20a) configured to convert a voltage (VDSa) across the first power transistor (10a) into a first output voltage greater than the voltage (VDSa) across the first power transistor (10a), • at least one second power transistor (10b) intended to be connected in series on the respective power supply line (81, 82) in opposition to the first power transistor (10a), • a second voltage booster (20b) configured to raise a voltage (VDSb) across the second power transistor (10b) to another first output voltage higher than the voltage (VDSb) across the second power transistor (10b), • a control module (30) common to the first voltage booster (20a) and the second voltage booster (20b) configured to stabilize the output voltage at a reference value (Vout set); and • a control module (40) configured to control the first power transistor (10a) and the second power transistor (10b), via the respective control electrode of each power transistor, the detection device (300) further comprising, for each pair consisting of a second power supply device and the first power supply device: • a system (90) for detecting the residual differential leakage current corresponding to the difference between the current flowing in the respective phase supply line and the current flowing in the neutral supply line, the detection system (90) being powered by a supply voltage (Vaiim); and • an auxiliary power supply module (130) supplied by the respective phase supply line and the neutral supply line, the auxiliary power supply module being configured to deliver a second output voltage (Vout PN) as well as an information signal (PN0K) representative of whether a voltage between the phase supply line and the neutral supply line is greater or less than a predefined voltage, the detection device (300) being configured to operate, for each pair consisting of a second supply device and the first supply device: • when the voltage between the respective phase supply line and the neutral supply line is greater than the predefined voltage, in a first operating mode in which the supply voltage (Vaiim) of the detection system (90) is a function of the second output voltage (Vout PN) and in which the regulation modules (40-1, 40-2), based on the information signal,control the respective first power transistors (10a) and the respective second power transistors (10b) to put them into saturation mode; • when the voltage between the respective phase supply line and the neutral supply line is less than the predefined voltage, in a second operating mode in which the supply voltage (Vaiim) of the detection system (90) is a function of at least a first output voltage and in which the regulation modules (40-1, 40-2), based on the information signal, control the respective first power transistors (10a) and the respective second power transistors (10b) to limit the output voltages around a first threshold value (Voutjimit).

8. Detection device according to claim 7, wherein, in the first mode of operation and for at least one current extraction power supply device (200), a power supply to at least one device among the first voltage booster, the second voltage booster, the servo module and the regulation module is cut off.

9. A detection device according to claim 7 or 8, wherein at least one power supply device (200) further comprises: a first voltage comparator (60a) to close the first power transistor (10a) when the voltage (VDsa) across its terminals is negative, a second voltage comparator (60b) to close the second power transistor (10b) when the voltage (VDSb) across its terminals is negative.

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