Method for transferring a MEMS onto a substrate

Abstract

The invention relates to a method for transferring a MEMS onto a substrate. During the transfer process, an intermediate vibration-absorbing pad (10) is interposed between the MEMS (20) and the substrate (8). The intermediate vibration-absorbing pad (10) has a minimum height such that the distance between the MEMS (20) and the substrate (8) is greater than 100 µm. Advantageously, the dimensions of the intermediate vibration-absorbing pad (10) are chosen to more effectively absorb the mechanical vibrations of the substrate. The transfer process according to the invention thus increases the accuracy of the MEMS while limiting its risk of deterioration, or even breakage, particularly when said MEMS is subjected to a vibrational environment of several thousand Hertz. Figure 4

Description

Title of the invention: Method for transferring a MEMS onto a substrate Technical field to which the invention relates

[0001] The present invention relates to the technical field of microelectronics and, more particularly, to a method of transferring a MEMS onto a substrate. Technological background

[0002] The use of micro-electromechanical systems, hereinafter referred to by the English acronym MEMS for "Micro Electro-Mechanical System", has become common in many and diverse industries.

[0003] In the automotive industry, MEMS are used for example to detect a sudden change in the speed of a motor vehicle, in order to trigger safety systems in the event of a collision.

[0004] In the field of aerospace, MEMS are used to track in real time the orientation as well as the speed of movement of aircraft, in order to allow for example its guidance by an onboard navigation system.

[0005] The MEMS mentioned above have the particularity of including moving components to carry out the measurements mentioned above.

[0006] To preserve the integrity of MEMS and facilitate their integration into electronic devices, they are first placed in sealed containers before use. During this encapsulation step, the MEMS are held at the bottom of a container by means of adhesive dots, and then the container is sealed to maintain a controlled atmosphere around the MEMS. This results in a MEMS module, or "packaged MEMS," suitable for integration into larger systems. These larger systems may include electronic devices, integrated circuits, and other components necessary to ensure the proper functioning and communication of the MEMS with their environment.

[0007] The accuracy of measurements performed by MEMS is largely due to the use of so-called sensitive parts, such as vibrating beams or test masses. These sensitive parts react to physical changes in their environment, transforming these changes into measurable signals. For example, vibrating beams oscillate at a specific frequency that changes according to the applied forces, thus making it possible to detect accelerations or rotations. Test masses, for their part, move in response to the movements of the MEMS, and their relative position can be measured with high precision to determine the orientation or acceleration of a device including the MEMS. The sensitivity of these components to the slightest variations makes them particularly effective for high-precision measurements, but also make them vulnerable to unwanted interference.

[0008] These parasitic disturbances include, in particular, mechanical vibrations transmitted to the MEMS by the container in which they are sealed. These mechanical vibrations then propagate to the sensitive parts of the MEMS, distorting the measurements performed by the MEMS, preventing the detection of low-intensity signals, or worse, causing premature and irreversible deterioration of said sensitive parts.

[0009] In order to increase the performance and lifespan of MEMS, it is therefore desirable to mitigate this phenomenon of propagation of parasitic disturbances to the MEMS.

[0010] To achieve this objective, the use of so-called decoupling frames is known. These decoupling frames are interposed between the MEMS and their substrate in order to mitigate this phenomenon of transmission of parasitic disturbances between the MEMS and their substrate.

[0011] However, decoupling frames have the disadvantage of possessing their own mechanical resonance modes, typically a few kilohertz, for example, on the order of 2.6 kHz. A vibration outside the vibration frequency of a mechanical mode specific to a decoupling frame can then be amplified by said decoupling frame. This amplification phenomenon can correspond to the quality factor of the mechanical mode in question, potentially reaching amplifications of several thousand.

[0012] The invention aims to provide a solution to limit the risk of deterioration, or even breakage, of the sensitive part of a MEMS, due to the transmission of mechanical vibrations between said MEMS and its substrate, particularly when the mechanical vibrations are on the order of a few thousand Hertz. Object of the invention

[0013] In order to achieve the objective mentioned above, the invention proposes a method of transferring a MEMS onto a substrate, in which the MEMS is fixed onto the substrate.

[0014] The invention is remarkable in that an intermediate vibration absorption pad is interposed between the MEMS and the substrate, and in that the intermediate vibration absorption pad has a minimum height such that the distance between the MEMS and the substrate is greater than 100 pm.

[0015] Advantageously, when the intermediate vibration absorption pad maintains a distance greater than 100 pm between the MEMS and the substrate, the mechanical vibrations of the substrate and / or the mechanical vibrations of the MEMS are absorbed more effectively by the intermediate vibration absorption pad, in particular when the frequencies of the mechanical vibrations are on the order of a few thousand Hertz.

[0016] The transfer method proposed by the invention thus makes it possible to limit the risk of deterioration or breakage of the MEMS, when the MEMS is held to a substrate vibrating at frequencies on the order of a few thousand Hertz.

[0017] According to another advantage, by absorbing substrate vibrations and / or MEMS vibrations, the intermediate vibration absorption pad significantly limits the influence of these vibrations on the MEMS operation. The MEMS is thus able to perform higher-quality measurements in frequency ranges on the order of a few thousand Hertz. In other words, mechanical vibrations of the substrate and / or mechanical vibrations of the MEMS are less likely to distort or degrade the MEMS sensitivity within the MEMS's own resonance mode ranges.

[0018] By "resonance mode specific to the MEMS", we mean one or more frequencies for which at least one sensitive part of a MEMS, including for example a moving element and / or an oscillating element, is capable of vibrating and possibly entering into resonance.

[0019] The transfer process described above thus makes it possible to increase the performance of the MEMS as well as its longevity.

[0020] According to another embodiment of the invention, the intermediate vibration absorption pad has a minimum height such that the distance between the MEMS and the substrate is greater than 200 pm, preferably between 250 pm and 500 pm or on the order of 275 pm.

[0021] According to another embodiment of the invention, the intermediate vibration absorption pad has a first face facing the substrate and a second face facing the MEMS, the smallest dimension of each of these two faces is equal to or greater than 300 pm, preferably between 400 pm and 600 pm or on the order of 500 pm.

[0022] Advantageously, an intermediate vibration absorption pad having a minimum height and a smaller dimension at its first and second face, selected from the ranges of values ​​mentioned above, allows better absorption of mechanical vibrations of the substrate when said vibrations are within a frequency range from 1,000 Hz to 10,000 Hz, preferably from 2,500 Hz to 2,700 Hz or around 2,600 Hz.

[0023] According to another embodiment of the invention, the first face and / or the second face of the intermediate vibration-absorbing pad has a circular or substantially circular contour. An intermediate absorption pad with this shape offers the advantage of being manufactured using methods that are easier to implement and therefore more economical.

[0024] According to a preferred embodiment, the block has a prismatic or cylindrical shape. These shapes have the advantage of being more easily and quickly produced by implementing a layer cutting process, as described below, by implementing a punching process.

[0025] According to another embodiment of the invention, the transfer process implements the following steps: a) application of a first layer of adhesive material to the substrate; then b) application of the intermediate vibration-absorbing pad onto the first layer of adhesive material, with the first face of the intermediate vibration-absorbing pad coming into contact with said first layer; then c) application of a second layer of adhesive material to the second face of the intermediate vibration-absorbing pad; then d) bringing the MEMS into contact with the second layer of adhesive material.

[0026] According to another advantage of the invention, the transfer method makes it possible to maintain a MEMS at a greater distance from its substrate, using a smaller quantity of adhesive material. Indeed, unlike known prior art transfer methods, the adhesive material is not used to maintain the MEMS at a distance from its substrate, but to maintain an intermediate vibration-absorbing pad between the MEMS and its substrate. Consequently, the thickness, and therefore the quantity of adhesive material used in the transfer method, is significantly less compared to prior art transfer methods.

[0027] According to another advantage, using a smaller quantity of adhesive material significantly reduces the time and / or temperature of any heat treatment carried out after the transfer process, for example during step e), to allow satisfactory polymerization of the adhesive material layers, maintaining the intermediate vibration-absorbing pad between the MEMS and its substrate. The invention thus saves time and resources when transferring a MEMS onto a substrate.

[0028] According to another advantage, during heat treatment following the transfer process, the outgassing of the adhesive layers is significantly reduced due to the smaller quantity of adhesive used, as mentioned above. The risks of dispersion of adhesive compounds into the environment are thus significantly reduced. By limiting this outgassing, the invention also reduces the presence on the surface of the MEMS of compounds originating from the adhesive used to adhere it to a substrate, which could degrade or prevent the MEMS from functioning.

[0029] Preferably, the thickness of the first layer and / or the thickness of the second layer of adhesive material is equal to or less than 20 pm, preferably between 1 pm and 10 pm.

[0030] The first layer of adhesive material may be composed of a synthetic polymer comprising silicon; preferably, the first layer of adhesive material is silicone-based. The second layer of adhesive material may be identical or substantially identical to the first layer of adhesive material.

[0031] According to another embodiment of the invention, the MEMS can be held to the substrate by means of several intermediate vibration-absorbing pads, interposed or intercalated between the substrate and the MEMS. The intermediate vibration-absorbing pads have the same or substantially the same characteristics as the intermediate vibration-absorbing pad described above.

[0032] In other words, steps a) to c) of the transfer method described above, allowing the interposition of an intermediate vibration absorption pad between the substrate and the MEMS, can be reproduced so that several intermediate vibration absorption pads are present between the MEMS and the substrate.

[0033] According to another embodiment of the invention, an intermediate vibration absorption pad according to the invention is chosen so that the smallest distance between the first face and the second face of said pad is equal to or greater than 100 pm, equal to or greater than 200 pm, or preferably between 250 pm and 500 pm or on the order of 275 pm.

[0034] According to another embodiment of the invention, the intermediate vibration-absorbing pad has a form factor between 0.2 and 1, preferably between 0.3 and 0.7. "Form factor" means the ratio between the value of the minimum height of the intermediate vibration-absorbing pad, corresponding to the smallest distance between its first and second faces, and the value of the largest dimension of the first face. Preferably, a high form factor is chosen when increased attenuation of at least one resonance mode characteristic of the MEMS is desired.

[0035] According to another embodiment of the invention, the second face of the intermediate vibration-absorbing pad is parallel or substantially parallel to its first face. This embodiment advantageously allows the use, for example, of an opening resulting from a layer punching process, as an intermediate vibration-absorbing pad.

[0036] According to another embodiment of the invention, the value of the Young's modulus of the intermediate vibration absorption pad is between 5MPa and 10 MPa, preferably between 6 MPa and 9 MPa.

[0037] According to another embodiment of the invention, the intermediate vibration absorption pad is produced by a punching process.

[0038] Preferably, the intermediate vibration-absorbing pad is produced by a punching or die-cutting process. This type of process offers the advantage of allowing the production of intermediate vibration-absorbing pads with controlled shape and dimensions, much more precisely than with a layer of polymerized adhesive material.

[0039] According to another advantage, producing an intermediate vibration-absorbing pad by a punching process makes it possible to obtain pads with an aspect ratio not achievable by depositing an adhesive material on a substrate. In other words, a punching process allows the production of intermediate vibration-absorbing pads with a height and width that cannot be obtained by depositing an adhesive material on a substrate. Consequently, the pads obtained by this method exhibit different absorption properties compared to the layers of adhesive material used to hold a MEMS on a substrate.The production of intermediate vibration absorption pads by a punching process therefore allows the production of pads with the dimensions mentioned above, offering the advantage of better attenuation of thermomechanical stress and a greater reduction in the quality factor of low frequency resonance modes, particularly in the frequency ranges mentioned above.

[0040] According to another advantage, producing intermediate vibration-absorbing pads by punching or die-cutting a layer allows for faster, simpler production of the pads with very good reproducibility. Producing one or more intermediate vibration-absorbing pads by a punching process also allows for the automation, and therefore a significant reduction in costs, of the transfer process described above.

[0041] According to another advantage, punching allows the production of intermediate vibration absorption pads, from matrices less likely to contaminate the MEMS, for example during a degassing phenomenon described above.

[0042] According to another embodiment of the invention, the intermediate vibration absorption pad is composed of a synthetic polymer comprising silicon, preferably said pad is silicone-based.

[0043] According to another embodiment of the invention, the MEMS is a resonant MEMS or a capacitive MEMS. By "resonant MEMS" is meant a MEMS comprising at least one oscillating element, the oscillation frequencies of which are measured to characterize a physical phenomenon. By way of non-limiting example, a resonant MEMS is capable of performing the following measurements: acceleration, rotation, detection of mass...

[0044] Of course, the different characteristics, variants and embodiments mentioned above can be combined with each other in various combinations, provided that they are not incompatible or mutually exclusive.

[0045] The invention also relates to a method of encapsulating a MEMS implementing a transfer method described above.

[0046] By way of non-limiting example, after carrying out a transfer process described above, the encapsulation process may implement a step of positioning a hollow housing on the substrate, so that the MEMS held to the substrate by means of at least one intermediate vibration absorption pad, is protected from the external environment by said housing.

[0047] According to one embodiment, the encapsulation process can implement a transfer process according to the invention, of a MEMS in a housing, then a step of sealing said housing with a cover, so that the MEMS is isolated from the environment outside the housing.

[0048] According to a preferred embodiment, following an encapsulation process described above, a MEMS module is obtained, comprising a MEMS in a sealed and / or airtight housing.

[0049] The invention also relates to a MEMS module comprising at least one MEMS encapsulated in a housing and fixed to a substrate. The MEMS module is notable in that it includes at least one intermediate vibration-absorbing pad interposed between the MEMS and the substrate.

[0050] According to another embodiment of the invention, at least one intermediate vibration-absorbing pad has a minimum height such that the distance between the MEMS and the substrate is greater than 100 pm. For the reasons mentioned above, preferably, at least one intermediate vibration-absorbing pad has a minimum height equal to or greater than 200 pm, preferably between 250 pm and 500 pm or on the order of 275 pm.

[0051] According to another embodiment of the invention, at least one intermediate vibration-absorbing pad has a first face facing the substrate and a second face facing the MEMS. The smallest dimension of the first face may be equal to or greater than 300 pm, preferably between 400 pm and 600 pm. The smallest dimension of the second face may be equal to or greater than 300 pm, preferably between 400 pm and 600 pm.

[0052] According to another embodiment of the invention, a first layer of adhesive material is present between the substrate and said at least one intermediate vibration absorption pad.

[0053] According to another embodiment of the invention, a second layer of adhesive material is present between at least one intermediate vibration absorption pad and the MEMS.

[0054] Preferably, the value of the Young's modulus of at least one intermediate vibration absorption pad is between 5 MPa and 10 MPa, preferably between 6 MPa and 9 MPa.

[0055] According to another embodiment of the invention, a wall of the MEMS module is formed by the substrate.

[0056] Preferably, one or more intermediate vibration absorption pads present between the substrate and the MEMS are identical or substantially identical to the intermediate vibration absorption pad used during the implementation of a transfer method described above.

[0057] According to another embodiment, the value of the Young's modulus of at least one intermediate vibration absorption pad is between 5 MPa and 10 MPa, preferably between 6 MPa and 9 MPa.

[0058] According to another embodiment, at least one intermediate vibration-absorbing pad is composed of a synthetic polymer comprising silicon. Preferably, at least one intermediate vibration-absorbing pad is silicone-based.

[0059] According to another embodiment, at least one intermediate vibration absorption pad is produced by a punching process. Description of the figures

[0060] The invention will be better understood from the following description, which relates to preferred embodiments, given by way of non-limiting examples, and explained with reference to the accompanying schematic drawings, in which:

[0061] - [Fig. 1] represents a first step in a method of transferring a MEMS onto a substrate, according to the invention, consisting of depositing a first layer of adhesive material on the surface of the substrate;

[0062] - [Fig.2] represents a second step of the transfer process according to the invention, consisting of positioning an intermediate vibration absorption pad on the first layer of adhesive material;

[0063] - [Fig.3] represents a third step of the transfer process according to the invention, consisting of depositing a second layer of adhesive material on the intermediate vibration absorption pad;

[0064] - [Fig.4] represents a fourth step of the transfer process according to the invention, consisting of positioning a MEMS on the second layer of adhesive material;

[0065] - [Fig. 5] represents a first step in the construction of an intermediate stud vibration absorption according to the invention, by implementing a punching process;

[0066] - Figure 6 represents a second punching process, consisting of move the punch visible on [Fig.5], through a matrix to obtain an intermediate vibration absorption pad;

[0067] - [Fig. 7] represents a third step in the punching process, consisting of to position the punch opposite a first layer of adhesive material covering a substrate;

[0068] - Figure 8 represents a fourth step in the punching process, consisting of extract the intermediate vibration absorption pad from the punch so that said pad is in contact with the first layer of adhesive material;

[0069] - Figure 9 represents a graph on which several simulations of damping factor, obtained from modeling of test devices, each test device comprising a MEMS held to a substrate of the same nature, by the same transfer process according to the invention, the dimensions of the intermediate vibration absorption pads holding the MEMS to its substrate being different for each test device;

[0070] - Fig. 10 represents a schematic cross-section of a MEMS module, obtained from of a transfer method according to the invention. Detailed description of the invention

[0071] As a reminder, the invention proposes a method of transferring a MEMS onto a substrate, allowing the vibrations of the MEMS to be significantly attenuated for at least one resonance mode specific to the MEMS.

[0072] A non-limiting embodiment of a method for transferring a MEMS onto a substrate, according to the invention, is illustrated by Figures 1 to 4 below.

[0073] According to a first step illustrated in [Fig. 1], an adhesive material 2 is deposited as a first layer 4 on a first face 6 of a substrate 8. Preferably, the first face 6 of the substrate is flat or substantially flat. The substrate may be composed of a metallic material and / or a ceramic material. In this case, the substrate 8 is a ceramic.

[0074] According to the present example, the adhesive material 2 is deposited by sponging. This deposition method advantageously allows the formation of a first layer 4 of thin adhesive material on the first face 6 of the substrate. By "thin" is meant a thickness between 1 µm and 10 µm. The thickness of the first layer 4 is measured in a direction normal or substantially normal to the first face 6 of the substrate.

[0075] It should be noted that in order to facilitate understanding of the invention, the elements represented in the figures are not to scale.

[0076] The area of ​​the first face 6 of the substrate, covered by the first layer 4, is chosen according to the dimensions of an intermediate vibration-absorbing pad that is to be maintained on the substrate 8, as described below. The first layer 4 can, for example, cover an area of ​​the first face 6 that is between 0.05 mm² and 0.2 mm².

[0077] The adhesive material 2 forming the first layer 4 can be composed of a synthetic polymer comprising silicon, preferably silicone.

[0078] According to a second step illustrated by [Fig.2], an intermediate vibration absorption pad 10 is superimposed on the first layer 4, so that a first face 12 of said pad, also called the lower face, is opposite the first face 6 of the substrate and in contact with the adhesive material 2. Preferably, the entire lower face of the intermediate vibration absorption pad is in contact with the adhesive material.

[0079] The intermediate vibration-absorbing pad 10 is delimited by a second face 14, also called the upper face, opposite its lower face. Preferably, the lower face is flat, and the upper face is parallel or substantially parallel to the lower face. The height of the intermediate vibration-absorbing pad, corresponding to the smallest distance measured between its lower face and its upper face, is equal to or greater than 100 pm or equal to or greater than 200 pm, preferably between 250 pm and 300 pm or approximately 275 pm.

[0080] The intermediate vibration-absorbing pad is characterized by a form factor between 0.2 and 1. The term "form factor" refers to the ratio between the height of the intermediate vibration-absorbing pad and its width. The width of the intermediate vibration-absorbing pad corresponds to the smallest distance measured between opposite lateral faces 16 of said pad along a direction parallel to its lower face 12. The width of the intermediate vibration-absorbing pad can be between 250 µm and 500 µm.

[0081] According to the present example, the plot 10 is cylindrical in shape and its diameter is on the order of 500 pm.

[0082] The intermediate vibration absorption pad 10 is composed of a material whose Young's modulus value is between 5 MPa and 10 MPa. The measurement of the Young's modulus is based on measurements of damped resonance modes, carried out using the instrument marketed by WATERS under the reference "ElectroForce 3200".

[0083] At the end of the second step, the intermediate vibration absorption pad 10 is held by the adhesive material 2 to the first face 6 of the substrate and extends perpendicularly or substantially perpendicularly to said first face 6.

[0084] According to a third step illustrated in [Fig. 3], an adhesive material 2 is deposited on the upper surface of the intermediate vibration-absorbing pad 10, in the form of a second layer 18. Preferably, the second layer 18 is composed of the same material or substantially the same material as the first layer 4, and the second layer 18 is deposited using the same method as the first layer 4. The second layer 18 is preferably of the same or substantially the same thickness as the first layer 4 described above. Preferably, the second layer 18 covers the entire upper surface of the intermediate vibration-absorbing pad 10.

[0085] According to a fourth step illustrated by [Fig.4], a MEMS 20 is deposited on the second layer 18, so that the MEMS is supported by the intermediate vibration absorption pad 10.

[0086] Optionally, according to a fifth step (not shown), the assembly obtained at the end of the fourth step can be heat-treated to promote faster and higher-quality polymerization of the first layer 4 and the second layer 18 of adhesive material. By way of non-limiting example, the heat treatment is at approximately 150°C for a period of approximately one hour.

[0087] Advantageously, the transfer method according to the invention makes it possible to keep the MEMS 20 at a distance from the first face 6 of the substrate, with a significantly smaller quantity of adhesive material compared to the prior art. The presence of the intermediate vibration-absorbing pad 10 between the substrate 8 and the MEMS 20 makes it possible to save a considerable amount of adhesive material, which is usually used to maintain a certain distance between the MEMS and the substrate.

[0088] The invention therefore allows a substantial saving of adhesive material when transferring a MEMS onto a substrate.

[0089] According to another advantage, because less adhesive material is used, the risks of environmental release of compounds from the adhesive material are significantly reduced. The invention thus minimizes the risk of environmental pollution of the MEMS by the adhesive material.

[0090] The interposition of an intermediate vibration-absorbing pad 10 between the substrate 8 and the MEMS 20 advantageously dampens certain vibration modes of the MEMS. Advantageously, the dimensions and shape of the intermediate vibration-absorbing pad 10 can be chosen to significantly attenuate or dampen vibration modes specific to the MEMS.

[0091] By "natural vibration mode", we mean a vibration of the MEMS at a specific frequency at which the MEMS vibrates and / or oscillates under the effect of an external excitation.

[0092] The transfer method according to the invention is particularly advantageous when it is desired to minimize or at least attenuate a natural vibration mode of a resonant MEMS, which may degrade or distort the measurements made by the MEMS.

[0093] According to an alternative embodiment not shown of the transfer method described above, each step can be reproduced several times so that a MEMS can be held to a substrate, by means of several pads identical or substantially identical to the intermediate vibration absorption pad 10.

[0094] Preferably, the intermediate vibration absorption pad 10 is produced by a punching process, the steps of which are illustrated by the attached figures 5 to 8.

[0095] Figure 5 illustrates a first step of the punching process according to the invention, consisting of placing a punch 22 opposite a die 24. The die 24 is preferably a layer of thickness identical or substantially identical to the height of the intermediate vibration absorption pad 10 described above.

[0096] The punch 22 defines a cavity 26 with a shape complementary to the desired pin 10. In this example, the cavity defines a cylindrical volume. The cavity 26 is open at a first end 27 facing the die 24. The cavity height is sufficient to allow a cut to be made in the die when the punch 22 passes through the die, as illustrated in [Fig. 6].

[0097] Following the movement of the punch through the die 24, a stud 10 is present in the cavity 26 of the punch 22.

[0098] Advantageously, the bottom 28 of the cavity is connected to suction means 30, so as to ensure that the intermediate vibration absorption pad 10 is kept in the cavity during the movement of the punch 22.

[0099] As illustrated by [Fig.7], the punch 22 can be used to position the intermediate vibration absorption pad 10 opposite the first layer 4 of adhesive material, during the second step of the transfer process described above.

[0100] To facilitate the extraction of the intermediate vibration-absorbing pad 10 from the cavity 26 of the punch during the positioning of the intermediate vibration-absorbing pad 10 on the first layer 4, the suction means 30 can be disconnected from the cavity. According to an alternative embodiment, the suction means 30 can be reversed so as to increase the atmospheric pressure in the bottom of the cavity to allow the expulsion of the intermediate vibration-absorbing pad 10 from said cavity, as illustrated in [Fig. 8].

[0101] The punch 22 can then be moved away from the substrate 8 in order to implement the third step of the transfer process according to the invention, illustrated by [Fig.3].

[0102] In other words, the punch 22 can also be used as a tool to move and position the intermediate vibration absorption pad 10 during a MEMS transfer process as proposed by the invention.

[0103] By way of non-limiting example, Table 1 below and the accompanying [Fig. 9] present the results of finite element simulations: damping factors as a function of the height of the intermediate vibration absorption pads. The theoretical finite element model was validated by measurements carried out on several test devices with intermediate vibration absorption pad heights of 100 pm and 250 pm.

[0104] Each test device consists of the same MEMS held to the same substrate by the same transfer process as described above.

[0105] [Tables 1] Height of intermediate vibration absorption pads (pm) Amplification factor (Q) 50 128 100 108 150 59 200 37 250 27 300 20

[0106] More specifically, each MEMS is held to its substrate by the same number of intermediate vibration-absorbing pads. The intermediate vibration-absorbing pads are identical in shape and arranged similarly between the MEMS and its substrate.

[0107] The measurements are carried out by applying, using known means, a mechanical vibration to the substrate of each test device. The frequency of this vibration is equal to or substantially equal to the resonance frequency of the first mechanical mode of the MEMS, in this case approximately 2.6 kHz. The amplification factor (Q) is determined by calculating the ratio between the vibration amplitude observed at the sensitive element (inside the decoupling frame that resonates) and the applied vibration amplitude.

[0108] More specifically, the tests performed are of the spectroscopic type, that is to say, an excitation frequency is applied to each test device, and that said frequency The excitation signal is modulated around a resonance frequency of approximately 2.6 kHz, resulting in a significant amplification of the resonance frequency, referred to hereafter as the "resonance peak." The amplitude and width of the resonance peak allow us to determine the amplification factor (Q) as described above.

[0109] The excitation applied to the devices was achieved by applying mechanical excitation. To do this, each test device is positioned on a vibrating platform, allowing the application of mechanical excitation within a desired frequency range, in this case around 2.6 kHz. Damping factor measurements are obtained from acceleration measurements at the sensitive elements of the MEMS.

[0110] As illustrated in Table 1 and [Fig. 9], the implementation of the invention advantageously makes it possible to significantly reduce the amplification factor of a test device when the height of the intermediate vibration-absorbing pads holding the MEMS to its substrate increases. The invention thus makes it possible to precisely control the damping factor of a test device, and therefore of a MEMS module, more accurately and efficiently, thereby improving the sensitivity of the measurements performed by the MEMS and also increasing its lifespan.

[0111] The invention also relates to a MEMS module 32, as illustrated in the accompanying [Fig. 10]. According to the present example, the MEMS module 32 is obtained from a transfer process described above.

[0112] The MEMS module 32 thus consists of a substrate 8 on which a MEMS 20 is maintained, by means of at least one intermediate vibration absorption pad 10 and adhesive layers 4 and 18 described previously.

[0113] The MEMS module 32 also includes a housing 34, delimiting a hollow space 36. The housing 34 is held opposite the substrate 8, preferably against said substrate, so that the MEMS is present in the space 36 delimited by said housing.

[0114] The housing is preferably held against said substrate so as to protect the MEMS 20 from the external environment 38. The MEMS module can be hermetically sealed and / or watertight against the external environment 38.

Claims

Demands

1. A method for transferring a MEMS (20) onto a substrate (8) in which the MEMS (20) is fixed to the substrate (8), characterized in that an intermediate vibration absorption pad (10) is interposed between the MEMS (20) and the substrate (8), and in that the intermediate vibration absorption pad (10) has a minimum height such that the distance between the MEMS (20) and the substrate (8) is greater than 100 pm.

2. A transfer method according to claim 1, wherein the intermediate vibration absorption pad (10) has a first face (12) facing the substrate (8) and a second face (14) facing the MEMS (20), the smallest dimension of each of these two faces being equal to or greater than 300 pm.

3. The method according to claim 2, implementing the following steps: a) depositing a first layer (4) of adhesive material (2) on the substrate (8); then b) depositing the intermediate vibration absorption pad (10) on the first layer (4) of adhesive material (2), the first face (12) of the intermediate vibration absorption pad (10) coming into contact with said first layer (4); then c) depositing a second layer (18) of adhesive material (2) on the second face (14) of the intermediate vibration absorption pad (10); then d) bringing the MEMS (20) into contact with the second layer (18) of adhesive material (2).

4. A transfer method according to claim 2 or 3, wherein the smallest distance between the first face (12) and the second face (14) of the intermediate vibration absorption pad (10) is equal to or greater than 100 pm.

5. A transfer method according to any one of claims 1 to 4, wherein the value of the Young's modulus of the intermediate vibration absorption pad (10) is between 5 MPa and 10 MPa.

6. A transfer method according to any one of claims 1 to 5, wherein the intermediate vibration absorption pad (10) is obtained by a punching process.

7. A transfer method according to any one of claims 1 to 6, wherein the MEMS (20) is of the resonant or capacitive type.

8. Method of encapsulating a MEMS (20) implementing a transfer method according to any one of claims 1 to 7.

9. MEMS module (32) comprising at least one MEMS (20) encapsulated in a housing (34) and fixed to a substrate (8), characterized in that it comprises at least one intermediate vibration absorption pad (10) interposed between the MEMS (20) and the substrate (8).

10. MEMS module (32) according to claim 9, wherein said at least one intermediate vibration absorption pad (10) has a minimum height such that the distance between the MEMS (20) and the substrate (8) is greater than 100 pm.

11. MEMS module (20) according to claim 9 or 10, wherein said at least one intermediate vibration absorption pad (10) has a first face (12) facing the substrate (8) and a second face (14) facing the MEMS (20), the smallest dimension of each of these two faces being equal to or greater than 300 pm.

12. MEMS module (20) according to any one of claims 9 to 11, wherein a first layer (4) of adhesive material is present between the substrate (8) and said at least one intermediate vibration absorption pad (10).

13. MEMS module (20) according to any one of claims 9 to 12, wherein the value of the Young's modulus of said at least one intermediate vibration absorption pad (10) is between 5 MPa and 10 MPa.

14. MEMS module (20) according to any one of claims 9 to 13, wherein said at least one intermediate vibration absorption pad (10) is composed of a synthetic polymer comprising silicon.

15. MEMS module (20) according to any one of claims 9 to 14, wherein said at least one intermediate vibration absorption pad (10) is produced by a punching process.

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