New method for oriented growth of a ferroelectric thin film of α-GeTe or a rhombohedral Ge1-xSnxTe alloy
The method of using a van der Waals-bonded growth sublayer and controlled deposition techniques addresses the challenge of oriented growth of rhombohedral α-GeTe or Ge1-xSnxTe alloy films, facilitating industrial-scale production with aligned ferroelectric domains for enhanced spin-charge interconversion in spintronic and ferroelectric devices.
FR3170802A1Pending Publication Date: 2026-06-26COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES +3
Patent Information
- Authority / Receiving Office
- FR · FR
- Patent Type
- Applications
- Current Assignee / Owner
- COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Filing Date
- 2024-12-20
- Publication Date
- 2026-06-26
Smart Images
Figure 00000000_0000_ABST
Abstract
The invention relates to a method for growing a ferroelectric layer (11) of α-GeTe or a rhombohedral Ge1-xSnxTe alloy on a substrate (10), wherein a growth sublayer (21) formed of a stack of crystalline sheets linked together by van der Waals bonds is arranged on the substrate, and then rhombohedral crystalline α-GeTe or Ge1-xSnxTe in the form of crystalline grains (12) is deposited onto the growth sublayer at a suitable temperature with a component that segregates between the crystalline grains. Figure for the abstract: Fig. 1.
Need to check novelty before this filing date? Find Prior Art