Vapor deposition mask and method for manufacturing organic electronic device

Abstract

To provide a vapor deposition mask capable of forming a vapor deposition pattern having definition higher than before with high quality.SOLUTION: A vapor deposition mask consisting of a semiconductor substrate has a plurality of openings for passing vapor deposition particles. A diaphragm portion having the smallest opening width is provided between an end part of the opening on the side of a vapor deposition source and an end part on the side of a substrate to be vapor-deposited; an opening width on the side of the substrate to be vapor-deposited is larger than the diaphragm portion; and at least a part of each inner wall of the plurality of openings is uneven.SELECTED DRAWING: Figure 2

Description

Technical Field

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[0001] The present invention relates to a vapor deposition mask and a method for manufacturing an organic electronic device.

Background Art

[0002] An organic EL (electroluminescence) element is a self-emitting display element. The organic EL element has a structure in which thin films are laminated and can respond at high speed. An organic EL panel (a display panel in which a plurality of organic EL elements are arranged) is light and can display excellent moving images, and has received great attention. The organic EL panel is used in display devices such as a flat panel display (FPD) and a small display for an electronic viewfinder (EVF).

[0003] Many organic EL panels include a step of vapor-depositing an organic material on a substrate to be vapor-deposited using a resistance heating type vacuum vapor deposition apparatus in the manufacturing process. In a full-color organic EL panel, it is necessary to accurately manufacture fine R (red), G (green), and B (blue) display elements (light-emitting elements; pixels). Therefore, a mask vapor deposition method is adopted in which three types of organic materials corresponding to R, G, and B are vapor-deposited at desired positions (different positions) using a metal mask or the like.

[0004] Here, consider manufacturing a higher-definition organic EL panel (organic electronic device). In that case, since it is necessary to increase the definition of the metal mask, it is necessary to process the metal mask thinly and with high accuracy. However, when the metal mask is made thin, it is easily bent, and plastic deformation that occurs when tension is applied becomes very large, so it is difficult to process with high accuracy.

[0005] Patent Document 1 discloses manufacturing a vapor deposition mask using a silicon substrate. The silicon substrate can be processed using semiconductor manufacturing technologies such as photolithography technology and dry etching technology, and can be processed with high accuracy of several μm.

Prior Art Document

[0006] [Patent Document 1] Japanese Patent Publication No. 2001-185350 [Overview of the project] [Problems that the invention aims to solve]

[0007] However, as resolution increases and the aperture of the deposition mask narrows, the deposited film can accumulate on the inner wall of the aperture, blocking it, or the deposited film on the inner wall can peel off and reach the substrate to be deposited, making it easier to cause pixel defects.

[0008] The present invention aims to provide a deposition mask capable of forming higher-resolution deposition patterns with higher quality than conventional methods, and ultimately to provide high-resolution organic electronic devices. [Means for solving the problem]

[0009] A first aspect of the present invention is a deposition mask made of a semiconductor substrate, having a plurality of openings for allowing deposition particles to pass through, wherein a constricted portion with the smallest opening width is provided between the end of the opening on the deposition source side and the end on the substrate side, the opening width on the substrate side is larger than the constricted portion, and at least a portion of the inner wall of each of the plurality of openings has an uneven shape.

[0010] A second aspect of the present invention involves arranging the above-described deposition mask so as to face the substrate to be deposited, This is a method for manufacturing an organic electronic device, characterized by depositing an organic material onto a substrate to be deposited through a deposition mask. [Effects of the Invention]

[0011] According to the present invention, it is possible to provide a deposition mask that can form a deposition pattern with higher resolution and higher quality than conventional masks, and consequently, a high-resolution organic electronic device. [Brief explanation of the drawing]

[0012] [Figure 1] This is a diagram showing the configuration of the deposition mask in the first embodiment. [Figure 2] This is a schematic cross-sectional view of the opening of the deposition mask in the first embodiment. [Figure 3] This is a schematic cross-sectional view of the opening of the deposition mask in the first embodiment. [Figure 4] This is a schematic cross-sectional view of the opening of the deposition mask in the second embodiment. [Figure 5] This is a schematic cross-sectional view of the opening of the deposition mask in the third embodiment. [Figure 6] This is a schematic cross-sectional view of the opening of the deposition mask in the fourth embodiment. [Figure 7] This is a schematic cross-sectional view of the opening of a conventional vapor deposition mask. [Figure 8] This is a schematic cross-sectional view of the opening of a conventional vapor deposition mask. [Figure 9] This is a schematic cross-sectional view of the opening of a conventional vapor deposition mask. [Figure 10] (a) A schematic plan view and (b) a schematic cross-sectional view of the opening of the deposition mask of the first embodiment. [Figure 11] (a) and (b) are schematic plan views of the opening of the deposition mask in the fifth embodiment, and (c) and (d) are schematic cross-sectional views. [Figure 12] (a), (c), (d), and (e) are schematic plan views of the narrowest part of the opening of the deposition mask in the fifth embodiment, and (b) is a schematic cross-sectional view. [Modes for carrying out the invention]

[0013] The embodiments for carrying out the present invention will be described below with reference to the drawings. However, the present invention can be carried out in many different ways, and is not limited to the embodiments described below. In addition, the drawings may schematically represent the width, thickness, shape, etc. of each part in order to clarify the explanation, but these are merely examples and do not limit the interpretation of the present invention.

[0014] <Problems Associated with High Definition> When depositing an organic EL using a deposition mask, as the definition increases, the openings of the deposition mask become narrower. When the openings become narrower, it becomes easier for the deposition film to block the openings or for abnormal growth of the deposition film to occur. In particular, when the size of the openings becomes as narrow as the thickness of the deposition film, the above problems cannot be ignored.

[0015] FIG. 7 is a schematic cross-sectional view of the inner wall 704 at the opening of the deposition mask. The inner wall 704 is vertical and its surface is flat. The deposition particles 710 adhere to the inner wall 704 to form a deposition film 714. Since the surface of the inner wall 704 is flat, when the thickness of the deposition film 714 increases, it is likely to peel off from the inner wall 704 and become foreign matter. The foreign matter reaches the substrate to be deposited 711 due to static electricity or the collision of the deposition particles 710, resulting in pixel defects.

[0016] FIGS. 8(a) to 8(c) show schematic cross-sectional views of a deposition mask 800 in which an opening 805 having a vertical cross-section is formed. FIG. 8(a) shows the deposition mask 800 before the deposition film 814 adheres, FIG. 8(b) shows the deposition mask 800 in the initial stage of deposition, and FIG. 8(c) shows the deposition mask 800 in the later stage of deposition.

[0017] ​​​​​​​​

[0019] Figures 9(a) to 9(c) show schematic cross-sectional views of a deposition mask 900 in which an opening 805 having a cross-section composed of slopes is formed. Figure 9(a) shows the deposition mask 900 before the deposition film 914 is attached, Figure 9(b) shows the deposition mask 900 in the early stages of deposition, and Figure 9(c) shows the deposition mask 900 in the later stages of deposition.

[0020] By making the sidewall of the opening 905 a sloped (tapered) surface, the effect of shadows can be reduced. However, when vapor-deposited particles 910 adhere to the vapor deposition mask 900, the vapor-deposited film 914 not only accumulates on the sidewall of the opening 905, but also wraps around to the back surface of the vapor deposition mask 900, creating abnormal growth 915. Here, in order to avoid blurring of pixels due to the diffusion of vapor-deposited particles 910, the distance between the vapor deposition mask 900 and the substrate 911 to be vapor-deposited is kept as narrow as possible. In this way, when the distance between the vapor deposition mask 900 and the substrate 911 to be vapor-deposited is narrow, as shown in Figure 9(c), the abnormal growth 915 comes into contact with the substrate 911 to be vapor-deposited, becomes foreign matter, and generates pixel defects.

[0021] <First Embodiment> A first embodiment of the present invention will be described below. Figure 1(a) is a schematic plan view of the deposition mask 1 according to this embodiment, and Figure 1(b) is a schematic cross-sectional view obtained by a plane passing through the line segment A-A' in Figure 1(a) and perpendicular to the deposition mask 1.

[0022] The deposition mask 1 is made of a semiconductor substrate such as single-crystal silicon and has a first region 2 containing multiple apertures 5 (apertures corresponding to pixels; pixel apertures) for allowing deposited particles to pass through, and a second region 3 surrounding the first region 2. Specifically, the first region 2 contains multiple pixel areas 8 corresponding to multiple chips, and multiple apertures 5 are arranged in each pixel area 8. The second region 3 surrounds the first region 2, and the thickness of the second region 3 is greater than the thickness of the first region 2 in order to support the first region 2.

[0023] In this embodiment, the first region 2 has a circular shape, and the second region 3 has an annular shape. For example, the outer diameter of the second region 3 is 100 mm to 300 mm. Also in this embodiment, the thickness of the first region 2 is 1 μm to 100 μm, and the thickness of the second region 3 is 100 μm to 775 μm.

[0024] In this embodiment, the deposition mask 1 is composed of an integrated substrate including a first region 2 and a second region 3. The substrate material is, for example, a silicon single crystal, SOI (Silicon On Insulator), or glass. Alternatively, the deposition mask 1 may be composed of a mask substrate corresponding to the first region 2 and an outer frame substrate corresponding to the second region joined together. In this case, the mask substrate and the outer frame substrate may be made of the same material or different materials. The outer frame substrate may be made of, for example, a metal, ceramic, or resin.

[0025] As shown in Figure 1(c), when manufacturing an organic electronic device using the deposition mask 1, the deposition mask 1 is placed on the mask holder 21. Deposition particles 10 from a deposition source (not shown) located on the opposite side of the substrate 11 to be deposited (lower side of the drawing) pass through the opening 5 of the deposition mask 1 and reach the substrate 11. In the following description, the direction in which the deposition source is located relative to the deposition mask 1 is considered downward. The direction in which the deposited substrate 11 exists is sometimes referred to as the upward direction.

[0026] Figure 2 is a schematic cross-sectional view of the opening 5 for allowing the deposited particles 10 to pass through. In this embodiment, the opening 5 is larger in the downward direction (towards the deposition source). Specifically, the opening 5 has a tapered first part (tapered portion) 51 in which the opening gradually decreases (narrows) and a second part (straight portion) 52 in which the size of the opening is substantially constant. The size of the opening may be evaluated by the width of the opening or by the area of ​​the opening. For example, the width of the opening can be the length of the diameter if the opening shape is circular, or the length of the diagonal if the opening shape is rectangular.

[0027] In this embodiment, the inner wall of the second portion 52, which is the narrowest part of the opening 5, has an uneven shape. Figures 3(a) to 3(d) show schematic cross-sectional views of the inner wall 4 of the second portion 52 of the opening 5. Since the inner wall has an uneven shape, the narrowest part of the opening is microscopically the convex part of the uneven shape, but when referring to the narrowest part of the opening 5, we should consider it on a more macroscopic scale, for example, on the order of about 10 times or more the thickness of the deposited film 14.

[0028] Figure 3(a) is an enlarged view of the inner wall 4 of the second section 52, and Figure 3(b) is a further enlarged view of one of the inner walls 4. In this example, the inner wall 4 has an uneven shape because multiple protrusions 7 with approximately constant height (steps) are formed on the inner wall 4. The height (steps) of the protrusions is at least equal to or greater than the thickness of the deposited film 14.

[0029] The height of the protrusions 7 (length in the direction perpendicular to the inner wall 4) is approximately constant in the depth direction of the opening. It is desirable that the height of the protrusions 7 is equal to or greater than the thickness of the vapor-deposited film 14. In this embodiment, the height of the protrusions 7 is defined as the difference between the average opening width 30 (diameter, diagonal, etc.) of the opening 5 and the opening width 31 (diameter, diagonal, etc.) of the portion where the protrusions 7 are located. The height of the protrusions 7 can be, for example, 1 to 10 times the thickness of the vapor-deposited film 14, or 2 to 5 times. If the thickness of the vapor-deposited film 14 is 10 nm, the height of the protrusions 7 can be 10 nm to 100 nm, or 20 nm to 50 nm. Also, if the thickness of the vapor-deposited film 14 is 50 nm, the height of the protrusions 7 can be 50 nm to 500 nm, or 100 nm to 250 nm. Furthermore, it is desirable that the thickness (length in the vertical direction) of the protrusion 7 be no more than twice the thickness of the deposited film 14.

[0030] The uneven surface created by the rectangular protrusions 7 described above can be formed by using materials with different etching selectivity ratios for the protrusions 7 and the rest of the material. The height of the uneven surface of the protrusions 7 can be controlled by using a material with an appropriate etching selectivity ratio.

[0031] Figure 10 shows the same schematic cross-sectional view as Figure 1(c) described in the first embodiment, and its schematic plan view. The opening width 6 is narrowed in some of the multiple openings 5 ​​of the deposition mask 1. The narrowest part of the opening 5 has an uneven side wall. The inner walls of the multiple openings 5 ​​are composed of layers of different materials, and are characterized by having different etching rates. With materials that have different etching rates, in the dry etching or wet etching process, there are differences not only in the etching rate in the depth direction but also in the etching rate in the lateral direction, so layers with narrow opening widths 6 and layers with wide opening widths 6 are formed, and the inner walls of the openings 5 ​​have uneven sides.

[0032] Figure 3(c) is an enlarged view of one of the inner walls 4 of the second section 52, showing another specific example of the uneven shape. In this example, the inner wall 4 has an uneven shape because it is formed on the inner wall 4 in multiple periods of projections 7 whose height changes continuously and periodically.

[0033] The height of the protrusions 7 (length in the direction perpendicular to the inner wall 4) is preferably equal to or greater than the thickness of the deposited film 14. In this example, the height of the protrusions 7 is perpendicular to the inner wall 4. It is defined as the difference in horizontal length between the shortest and longest parts (the difference in horizontal length between the highest and lowest parts). The height of the protrusions 7 can be, for example, 1 to 10 times the thickness of the deposited film 14, or 2 to 5 times.

[0034] Furthermore, if the repeating period of the wavy irregularities of the protrusions 7 is too long, it will be equivalent to a flat surface, so it is desirable that it be relatively short. For example, the repeating period of the protrusions 7 is preferably five times or less, or twice or less, the thickness of the deposited film 14.

[0035] The uneven shape created by the wavy protrusions 7 described above can be formed, for example, by using the Bosch process, known as deep etching of silicon. In the Bosch process, periodic scallops are formed on the sidewalls to facilitate gas switching.

[0036] When the deposited particles 10 reach the protrusions 7 of the inner wall 4, which has an uneven shape as shown in Figures 3(a) to 3(c), the deposited film 14 is supported by the protrusions 7 and stably deposited on the inner wall 4. In this way, the presence of multiple protrusions 7 on the inner wall 4 increases the adhesion force of the deposited film 14, suppressing the peeling off of the deposited film 14 and preventing it from becoming foreign matter.

[0037] In Figures 3(b) and 3(c), a periodic structure of protrusions 7 is provided, but a similar effect can be obtained if the inner wall 4 has sufficiently large irregularities. Therefore, as shown in Figure 3(d), the inner wall 4 may have a non-periodic shape with a surface roughness Ra. In other words, the irregular shape of the inner wall 4 may be composed of rough surfaces with a surface roughness Ra. Here, it is desirable that the surface roughness Ra is equal to or greater than the thickness of the deposited film 14. For example, the surface roughness Ra of the inner wall 4 can be 1 to 10 times, or 2 to 5 times, the thickness of the deposited film 14. For example, the surface roughness Ra is 10 nm or more.

[0038] Furthermore, in this embodiment, the inner wall 4 of the second portion 52, which is the narrowest part of the opening 5, is provided with an uneven shape, but the inner wall of the tapered first portion 51 may also be provided with an uneven shape. Also, the opening 5 has a tapered first portion 51 and a straight second portion 52 from the vapor deposition source side, but the second portion 52 may be a tapered shape with a smaller reduction in opening width (closer to parallel) than the first portion 51. In this case, the uneven shape is provided around the narrowest part of the second portion or on the entire inner wall 4.

[0039] This section describes a part of the process for fabricating an OLED (Organic Light Emitting Diode), an example of an organic electronic device, using the deposition mask of this embodiment.

[0040] As shown in Figure 1(c), the deposition mask 1 is positioned so that its upper surface faces the lower surface of the substrate 11 to be deposited. After aligning the deposition mask 1 with respect to the substrate 11, an unshown deposition source located below the deposition mask 1 (on the side opposite to the substrate 11) is heated to scatter deposition particles 10 from the deposition source. The scattered deposition particles 10 pass through the opening 5 of the deposition mask 1 and reach the substrate 11. As a result, deposition particles 10 are deposited on the substrate.

[0041] Here, the deposited particles 10 are organic light-emitting materials. For example, organic materials that emit red light (R), organic materials that emit green light (G), and organic materials that emit blue light (B) can be selected to form the deposited particles 10. In this case, it is necessary to deposit (form a film) each of the three types of organic materials at desired positions (different positions). Therefore, three deposition masks 1 corresponding to R, G, and B are used, specifically three deposition masks 1 with different positions for the aperture 5. The width of the aperture 5 can be reduced to a few micrometers depending on the size of the pixel.

[0042] Although an example of depositing multiple organic materials with different emission colors has been described, this is not required. For example, an OLED could be manufactured using only white-emitting organic material as the deposited particles 10, and a color filter could be used to change the white light into red, green, or blue light. In that case, a single aperture approximately the same size as the pixel area 8 could be placed in the pixel area 8. The width of such an aperture can be freely selected, for example, within the range of 0.1 mm to 100 mm.

[0043] By using the deposition mask 1 described in this embodiment, even if the aperture 5 is made highly detailed, it is possible to prevent the aperture 5 from being blocked by the deposition film 14 and to suppress the generation of foreign matter. Furthermore, it is possible to manufacture high-resolution organic electronic devices such as OLEDs with a high yield.

[0044] <Second Embodiment> A second embodiment of the present invention will be described with reference to Figure 4. Figure 4 is a schematic cross-sectional view of the same location as in Figure 2 described in the first embodiment. The opening width in a part of the opening 5 of the deposition mask 1 is further narrowed, and the opening width 6 is narrowest in the part closest to the substrate 11 to be deposited.

[0045] Specifically, the opening 5 in this embodiment has, in order from the deposition source side (bottom of the drawing), a first portion 51, a second portion 52, and a constricted portion 53. The first portion 51 and the second portion 52 have a tapered shape in which the opening width gradually narrows, and the size of the opening changes discontinuously at the point where the first portion 51 and the second portion 52 connect, with the opening at the lower end of the second portion 52 being smaller than the opening at the upper end of the first portion 51. The constricted portion 53 is provided at the end of the mask substrate on the substrate to be deposited, and the opening width 6 is narrowest due to the provision of a projection. Note that the inner walls of the second portion 52 and the constricted portion 53 may be provided with an uneven shape, similar to the first embodiment.

[0046] According to the structure of this embodiment, in areas other than the narrowest opening, the constricted portion 53, the attached vapor-deposited particles 10 do not block the opening 5. Furthermore, even if the vapor-deposited particles 10 peel off and become foreign matter, the presence of the constricted portion 53 reduces the likelihood of the foreign matter reaching the substrate 11 to be vapor-deposited. Therefore, according to this embodiment, it is possible to provide a vapor deposition mask that can manufacture organic electronic devices with a high yield.

[0047] <Third Embodiment> A third embodiment of the present invention will be described with reference to Figure 5. Figure 5 is a schematic cross-sectional view of the same location as in Figure 2 described in the first embodiment. In this embodiment, the narrowest part of the opening width 6 is located midway between the upper and lower ends of the opening 5 of the deposition mask 1, and the opening width 6 in the part closest to the substrate 11 to be deposited is wider than the narrowest part.

[0048] Specifically, the opening 5 of this embodiment has, in order from the vapor deposition source side (bottom of the drawing), a first portion 51, a constricted portion 53, and a second portion 52. The first portion 51 has a tapered shape in which the opening width gradually narrows, and the second portion 52 has an inverse tapered shape in which the opening width gradually widens. The constricted portion 53 is provided between the first portion 51 and the second portion 52, and the opening width 6 is narrowest in this portion. Note that the inner walls of the second portion 52 and the constricted portion 53 may be provided with an uneven shape, similar to the first embodiment.

[0049] According to the structure of this embodiment, in areas other than the narrowest opening, the constricted portion 53, the attached vapor-deposited particles 10 do not block the opening 5. Furthermore, even if the vapor-deposited particles 10 peel off and become foreign matter, the presence of the constricted portion 53 reduces the likelihood of the foreign matter reaching the substrate 11 to be vapor-deposited. Moreover, even if the vapor-deposited particles 10 wrap around to the back side of the constricted portion 53 and grow abnormally, they do not come into contact with the substrate 11 to be vapor-deposited, thus preventing the generation of foreign matter. Therefore, according to this embodiment, the yield is This makes it possible to provide a deposition mask that can manufacture highly efficient organic electronic devices.

[0050] <Fourth Embodiment> A fourth embodiment of the present invention will be described with reference to Figure 6. Figure 6 is a schematic cross-sectional view of the same location as in Figure 2 described in the first embodiment. In this embodiment, in addition to the configuration of the third embodiment, the opening width 6 at the position furthest from the substrate 11 to be deposited is narrowed to the same extent as the narrowest part.

[0051] Specifically, the opening 5 of this embodiment has, in order from the deposition source side (bottom of the drawing), a diaphragm 54, a first section 51, a diaphragm 53, and a second section 52. The first section 51 has a tapered shape in which the opening width gradually narrows, and the second section 52 has an inverse tapered shape in which the opening width gradually widens. The diaphragm 54 is provided at the position closest to the deposition source (the position furthest from the substrate 11 to be deposited). The diaphragm 53 is provided between the first section 51 and the second section 52. The opening widths 6 of the diaphragm 53 and the diaphragm 54 are substantially the same, and these sections have the narrowest opening width 6. Note that the opening widths 6 of the diaphragm 53 and the diaphragm 54 do not have to be exactly the same; for example, the opening width 6 of the diaphragm 54 may be wider than the opening width 6 of the diaphragm 53. In addition, the inner walls of the second section 52 and the diaphragm sections 53 and 54 may be provided with an uneven shape, similar to the first embodiment.

[0052] According to the structure of this embodiment, in areas other than the narrowest openings, the deposited vapor-deposited particles 10 do not block the opening 5. Furthermore, even if the vapor-deposited particles 10 peel off and become foreign matter, the presence of the narrowed portion 53 reduces the likelihood of the foreign matter reaching the substrate 11 to be vapor-deposited. Moreover, even if the vapor-deposited particles 10 wrap around to the back of the narrowed portion 53 and grow abnormally, they do not come into contact with the substrate 11 to be vapor-deposited, thus preventing the generation of foreign matter. In addition, because there are two narrowed portions 53 and 54, only vapor-deposited particles 10 with high straight-line propagation properties are deposited on the substrate to be vapor-deposited. For these reasons, therefore, according to this embodiment, it is possible to provide a vapor-deposited mask that can manufacture organic electronic devices with high performance and high yield.

[0053] <Fifth Embodiment> A fifth embodiment of the present invention will be described below with reference to Figures 11 and 12.

[0054] Figures 11(b) and (d) and Figure 12(b) are schematic cross-sectional views identical to those in Figure 2 described in the first embodiment. Figures 11(a) and (c) and Figures 12(a)(c) to (f) are schematic plan views.

[0055] In the examples shown in Figures 11(a) and (b), the cross-sectional shape of the narrowest part of the opening 5 is polygonal. That is, in this example, the opening width 6 in a part of the opening 5 of the deposition mask 1 has parts that are narrower and parts that are wider than the average diameter of the narrowest part of the opening 5 in the circumferential direction of the inner wall of the opening 5. In other words, the opening 5 is formed by an inner wall with different distances from the center. Also, as shown in Figures 11(c) and (d), the part of the opening 5 with a polygonal cross-sectional shape may have a tapered shape in which the opening width narrows with depth.

[0056] Furthermore, the cross-sectional shape of the opening 5 can be any shape as long as the distance from the center differs in the circumferential direction, as shown in Figures 12(a), (c) to (f). In other words, the inner wall of the narrowest part of the opening 5 does not have to be circular, but it can be polygonal. It is desirable that the polygon has three or more vertices but less than 20. It is desirable that the interior angles at the vertices of the polygon alternate between 180 degrees or less and 180 degrees or more. The vertices of the polygon may be acute or chamfered.

[0057] Because the cross-sectional shape is polygonal, the inner wall of the narrowest part of the opening 5 consequently forms irregularities. In other words, the vertices of the polygonal cross-section have the same effect as the protrusions 7 in the first embodiment. As a result, the deposited film is supported by the protrusions and stably deposited on the inner wall. The presence of protrusions on the inner wall increases the adhesion of the deposited film, suppressing the peeling of the deposited film and its formation as foreign matter.

[0058] The inner wall of the narrowest part of opening 5 will have vertical grooves formed in the depth direction. When considering a method for regenerating the deposition mask, the vertical grooves in the depth direction are a structure that does not easily hinder the melting, evaporation, or sublimation of the deposited deposition film during the removal process of the deposited film. In other words, a chemical solution for dissolving the deposition film can be flowed along the vertical grooves in the depth direction. Furthermore, by heating the deposition film, the deposition film can vaporize and detach along the vertical grooves in the depth direction. As a result, the deposition mask is easier to regenerate, which provides advantages such as a shorter regeneration time and less deposition film residue after regeneration, making it more preferable. [Explanation of symbols]

[0059] 1: Evaporation mask, 4: Inner wall, 5: Opening, 7: Protrusion

Claims

1. A deposition mask comprising a semiconductor substrate having a first surface and a second surface, a plurality of openings extending between the first surface and the second surface for allowing vapor deposition particles to pass therethrough; an inner wall facing the opening has a protrusion between an end portion on the first surface side and an end portion on the second surface side; the inner wall has a tapered shape between the end portion on the first surface side and the protrusion portion, the opening diameter of which increases toward the end portion on the first surface side. A deposition mask comprising:

2. The inner wall has a plurality of protrusions between the end portion on the first surface side and the end portion on the second surface side.

2. The deposition mask according to claim 1.

3. The protrusion is a portion of the opening having the smallest opening width in a depth direction of the opening.

2. The deposition mask according to claim 1.

4. The protrusion has a shape in which the distance from the center of the opening varies in the circumferential direction of the opening.

2. The deposition mask according to claim 1.

5. The protrusion is formed in a plurality of steps with a substantially uniform height.

4. The deposition mask according to claim 1, wherein the deposition mask is a deposition mask having a thickness of 100 nm or less.

6. a step between the protrusion and the inner wall is equal to or greater than a thickness of a film to be deposited; The deposition mask according to claim 5 .

7. The height of the protrusions changes periodically and is formed over a plurality of periods.

4. The deposition mask according to claim 1, wherein the deposition mask is a deposition mask having a thickness of 100 nm or less.

8. a difference between the shortest and longest lengths of the protrusions in a direction perpendicular to the inner wall is equal to or greater than a thickness of a film to be deposited; The deposition mask according to claim 7 .

9. The repetition period of the protrusions is 5 times or less the thickness of the deposited film.

9. The deposition mask according to claim 7 or 8.

10. The protrusion is composed of a plurality of layers of different materials, The layers of different materials have different etching rates; The deposition mask according to claim 7 .

11. The protrusion portion is formed of a rough surface having a surface roughness Ra of 10 nm or more.

5. The deposition mask according to claim 1, wherein the deposition mask is a deposition mask having a thickness of 100 nm or less.

12. The first surface is a surface facing a deposition source, and the second surface is a surface facing a deposition substrate. The deposition mask according to claim 1 .

13. The narrowing portion having the smallest opening width is provided at an end of the opening on the substrate side. The deposition mask according to claim 1 .

14. The opening width on the deposition substrate side from the narrowing portion is larger as it is farther from the narrowing portion. The deposition mask according to claim 13 .

15. a second throttling portion having substantially the same opening width as the throttling portion is provided at an end of the opening on a deposition source side; 15. The deposition mask according to claim 13 or 14.

16. The semiconductor substrate is made of single crystal silicon. The deposition mask according to claim 1 .

17. The deposition mask according to claim 1 is disposed so as to face a deposition target substrate; Depositing an organic material onto the deposition substrate through the deposition mask; 2. A method for producing an organic electronic device comprising the steps of:

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