Protective shutter for charged particle microscope

Abstract

To provide a charged particle microscope having a mechanism to protect the components thereof from contaminated substances.SOLUTION: A charged particle microscope 100 is provided, including at least a charged particle column 141 and a focused ion beam (FIB) column 111, a gas injection nozzle 172 coupled to a translation device 170, the translation device 170 configured to insert the gas injection nozzle 172 in close proximity to a stage 125, and a shutter 174 coupled to the gas injection nozzle 172 and arranged to be disposed between a sample 122 and the charged particle column 141 when the gas injection nozzle 172 is inserted in close proximity to the stage 125.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention generally relates to charged particle microscopes, particularly charged particle microscopes including a protective shutter for use during ion processing.

Background Art

[0002] Various forms of charged particle microscopes include a focused ion beam used for sample processing. The processing can include sputtering of sample material, gas-assisted etching of the sample, and / or gas-based material deposition onto the sample. During any of these processes, the interaction between charged particles and gas vapor can cause material to redeposit in unwanted areas or cause deposition in those unwanted areas. If such redeposition or deposition is on sensitive components such as detectors and lens electrodes, it may cause degradation. Other protection means exist, but such protection means have other drawbacks such as consumption of access ports, and better and more useful protection is desired.

Summary of the Invention

[0003] Disclosed herein is a technique directed to a protective shutter for a charged particle microscope. Examples of the apparatus include at least a charged particle column and a focused ion beam (FIB) column, and a gas injection nozzle coupled to a translation device, the translation device being configured to insert the gas injection nozzle in the immediate vicinity of the stage, the gas injection nozzle, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in the immediate vicinity of the stage.

Brief Description of the Drawings

[0004] [Figure 1] An example of a microscope with a shutter incorporated in a gas injection nozzle, according to an embodiment of the present disclosure. [Figure 2]This is a diagram of a system for providing protection to a charged particle column with a shutter, according to one embodiment of the present disclosure. [Figure 3A] An example of a shutter and a diagram of alignment marks according to one embodiment of the present disclosure are shown. [Figure 3B] An example of a shutter and a diagram of alignment marks according to one embodiment of the present disclosure are shown. [Figure 3C] An example of a shutter and a diagram of alignment marks according to one embodiment of the present disclosure are shown. [Figure 3D] An example of a shutter and a diagram of alignment marks according to one embodiment of the present disclosure are shown. [Figure 4] This is an example of a system according to an embodiment of the present disclosure. [Figure 5] This is an example of a method according to one embodiment of the present disclosure. [Figure 6] This is an example of a functional block diagram according to an embodiment of the present disclosure.

[0005] Similar reference numbers refer to corresponding parts across several figures in the drawing. [Modes for carrying out the invention]

[0006] Embodiments of the present invention are described below in the context of a charged particle microscope including a protective shutter coupled to a gas injection nozzle. The protective gas injection nozzle may be inserted toward the sample such that the protective shutter is positioned between the sample and sensitive components of the charged particle column, such as lens electrodes, pole pieces, and detector surfaces. It should be understood that the methods described herein are generally applicable to a wide range of different tomography methods and apparatus, including both cone-beam and parallel-beam systems, and are not limited to any particular type of apparatus, beam type, object type, length, or scanning trajectory.

[0007] As used in this application and claims, the singular forms "a," "an," and "the" also include the plural form unless otherwise explicitly indicated in the context. Additionally, the term "includes" means "equipped with." Furthermore, the term "combined" does not exclude the existence of intermediate elements between combined items.

[0008] The systems, apparatus, and methods described herein should not be construed as restrictive in any way. Rather, this disclosure covers all novel and non-obvious features and aspects of the various disclosed embodiments, both individually and in various combinations and partial combinations. The disclosed systems, methods, and apparatus are not limited to any particular aspect or feature or combination thereof, nor do they require any one or more particular advantages or problems to be solved. Any operating theories provided are for ease of explanation, but the disclosed systems, methods, and apparatus are not limited to such operating theories.

[0009] Some operations of the disclosed methods are described in a particular order for convenience; however, it should be understood that this style of description is inclusive of reordering unless a specific order is required by the specific terminology used below. For example, operations described sequentially may, in some cases, be reordered or performed simultaneously. Furthermore, for simplification, the accompanying diagrams may not show the various ways in which the disclosed systems, methods, and apparatus can be used with other systems, methods, and apparatus. In addition, this specification sometimes uses terms such as “produce” and “provide” to describe the disclosed methods. These terms are high-level abstractions of the actual operations performed. The actual operations corresponding to these terms vary depending on the particular implementation and are readily recognizable to those skilled in the art.

[0010] In some examples, values, procedures, or devices are referred to as “lowest,” “best,” “minimum,” etc. Such descriptions are intended to indicate that a choice is possible from many usable functional options, and it will be understood that such a choice does not need to be superior, smaller, or otherwise desirable compared to other choices.

[0011] Current dual-beam systems can experience malfunctions due to gas processing that affects SEM column components and / or detectors. For example, while depositing or removing material from a sample using a FIB column, sputtered reactive components from the sample can redeposit on the SEM column and / or detector within the chamber. This redepositance can reduce the detector's collection efficiency, and the redepositance on the SEM column components can create a heterogeneous field within or around the column ends, which may become charged by secondary / backscattered electrons and potentially affect detector performance. Existing mitigation measures may involve using shutters to cover the SEM column during FIB-based processing. However, such shutters occupy chamber ports that may be used for further processing and / or analysis. Such shutters may also affect FIB performance or may be inserted simultaneously with the gas injection system (GIS) for FIB processing. Therefore, a solution is needed that protects SEM column components while providing effective FIB processing. It should be noted that such a solution may be incorporated into a transmission electron microscope with a FIB column, so that the components of the objective lens can be protected while the FIB is processing the sample.

[0012] One solution is to attach a shutter to the GIS nozzle that can protect the SEM column components while allowing for effective FIB processing. Such a shutter may extend beyond the GIS nozzle aligned between the processing position and the SEM column pole piece. To ensure the shutter is properly aligned with the SEM column, alignment marks may be formed on the SEM-facing side of the shutter to align it in the X, Y, and Z directions. Furthermore, depending on the shape of the shutter, an image of the shutter may be used to determine the shutter's roll and correct any associated alignment issues.

[0013] Figure 1 shows an example of a microscope 100 with a shutter incorporated into a gas injection nozzle, according to an embodiment of the present disclosure. While microscope 100 is an example of a dual-beam system 100, the disclosed technique can be implemented in any charged particle microscope where it is necessary to protect sensitive components from contamination during ion beam processing of a sample. An example of microscope 100 includes a vertically mounted SEM column and a focused ion beam (FIB) column mounted at an angle of approximately 52 degrees from the vertical plane. However, other orientations of the two columns are also possible and contemplated herein. Microscope 100 includes a shutter that can cover, for example, protect the SEM column while the FIB column is being used to process a sample. The shutter can prevent sputtered material from redepositing onto the SEM column components and / or prevent the processing gas flowing around the SEM column components from being activated for secondary or backscattered charged particles. Such activation can cause the deposition of contaminants on some of the components, which may affect their intended and desired operation.

[0014] The SEM column 141, along with the power supply and control unit 145, is provided with the microscope 100. By applying a voltage between the cathode 152 and the anode 154, an electron beam 143 is emitted from the cathode 152. The electron beam 143 is focused into a fine spot by the focusing lens 156 and the objective lens 158. The electron beam 143 is scanned two-dimensionally on the specimen by the deflection coil 160. The operation of the focusing lens 156, the objective lens 158, and the deflection coil 160 is controlled by the power supply and control unit 145.

[0015] The electron beam 143 can be focused onto the substrate 122, which is located on the movable XY stage 125 in the lower chamber 126. When electrons in the electron beam collide with the substrate 122, secondary electrons are emitted. These secondary electrons are detected by the secondary electron detector 140. The STEM detector 162, located below the TEM sample holder 124 and stage 125, can collect electrons that pass through the sample mounted on the TEM sample holder, as described above.

[0016] The microscope 100 further includes a FIB column 111, which comprises a vacuum chamber having an upper neck portion 112 in which an ion source 114 and a focusing column 116 including an extraction electrode and an electrostatic optics system are located. The upper neck portion 112 includes the ion source 114, an extraction electrode 115, a focusing element 117, a deflection element 120, and a focused ion beam 118. The focused ion beam 118 passes from the ion source 114 through the focusing column 116 and the electrostatic deflection means schematically shown in 120 toward a substrate 122, which comprises a sample positioned, for example, on a movable XY stage 125 in a lower chamber 126.

[0017] The stage 125 is preferably movable in the horizontal plane (X and Y axes) and vertically (Z axis). The stage 125 can also be tilted at approximately 60 degrees and rotated around the Z axis. In some embodiments, a separate TEM sample stage (not shown) may be used. Such a TEM sample stage is also preferably movable in the X, Y, and Z axes. The door 161 is opened to insert the substrate 122 into the XY stage 125 and, if an internal gas supply reservoir is used, to maintain it. The door is interlocked so that it cannot be opened when the system is under vacuum.

[0018] Ion pump 168 is used to evacuate the neck portions of the FIB and SEM columns 111 and 141, respectively. Chamber 126 is evacuated using a turbomolecular and mechanical pump system 130 under the control of vacuum controller 132. The vacuum system provides a vacuum of approximately 1 × 10⁻⁷ Torr to 5 × 10⁻⁴ Torr within chamber 126. If etching aid gases, etching delay gases, or deposition precursor gases are used, the background pressure in the chamber may rise to typically about 1 × 10⁻⁵ Torr.

[0019] A high-voltage power supply provides an appropriate acceleration voltage to the electrodes in the focusing column 116 to energize and focus the ion beam 118. When it collides with the substrate 122, the material is sputtered, i.e., physically ejected, from the sample. Alternatively, the ion beam 118 can decompose a precursor gas to deposit the material.

[0020] The high-voltage power supply 134 is connected to appropriate electrodes in the liquid metal ion source 114 and the ion beam focusing column 116 to form an ion beam 118 of about 1 keV to 60 keV and direct it towards the sample. A deflection controller and amplifier 136 operating according to a predetermined pattern provided by the pattern generator 138 are coupled to the deflection plates 120, whereby the ion beam 118 can be manually or automatically controlled to track the corresponding pattern on the upper surface of the substrate 122. A beam blanking electrode (not shown) in the focusing column 116 causes the ion beam 118 to impinge on a blanking aperture (not shown) instead of the substrate 122 when a blanking controller (not shown) applies a blanking voltage to the blanking electrode.

[0021] The liquid metal ion source 114 typically provides a gallium metal ion beam. Typically, the source can be focused into a beam with a width of sub-1 / 10 micrometer at the substrate 122 for the purpose of modifying the substrate 122 by ion milling, enhanced etching, material deposition, or for imaging the substrate 122. Alternatively, the liquid metal ion source 114 may be replaced by a plasma-based ion source that can provide various ion species for processing the sample.

[0022] A charged particle detector 140, such as an Everhart Thornley or a multi-channel plate used to detect secondary ions or electron emission, is connected to a video circuit 142 that supplies a drive signal to the video monitor 144 and receives a deflection signal from the system controller 119. The position of the charged particle detector 140 within the lower chamber 126 can vary in different embodiments. For example, the charged particle detector 140 can be coaxial with the ion beam and include a hole for the ion beam to pass through. In other embodiments, secondary particles can be collected through the final lens of the SEM column 141 and then deflected from the axis for collection.

[0023] The micromanipulator 147 can accurately move an object within a vacuum chamber. The micromanipulator 147 may include a precision electric motor 148 positioned outside the vacuum chamber to provide X, Y, Z, and theta control of a portion 149 positioned within the vacuum chamber. The micromanipulator 147 can be fitted with different end effectors for manipulating small objects. In an embodiment, the end effector is a thin probe 150.

[0024] The gas delivery system 146 extends into the lower chamber 126 for introducing and directing various gas vapors towards the substrate 122. For example, iodine can be delivered to enhance etching, or a metal organic compound can be delivered to deposit metal. The gas delivery system 146, which may also be referred to as a gas injection system (GIS) 146, includes a nozzle 172 and is coupled to a motion control motor 170. The motion control motor 170 can be controlled to move the GIS 146 to and from a position proximate to the SEM and FIB columns and the stage 125 during sample processing using the FIB column 111 so that components of the SEM column are protected. A shutter 174 can be coupled to or integrally formed at the end of the nozzle 172 of the GIS 146. The shutter 174 can be formed from a conductive material so that charge accumulation does not occur when it is in the inserted position. In some examples, when the shutter 174 is coupled to the nozzle 172 and the nozzle moves to a position proximate to the stage 125 to provide gas to the sample, the shutter covers or provides a protective barrier to the SEM column 141 during sample processing.

[0025] The system controller 119 controls the operation of various parts of the microscope 100. Through the system controller 119, the user can cause the ion beam 118 or electron beam 143 to scan in a desired manner via commands entered into a conventional user interface (not shown). Alternatively, the system controller 119 may be stored in memory 121 and control the microscope 100 according to programmed instructions. In some examples, the microscope 100 incorporates image recognition software to automatically identify a region of interest, and the system can then manually or automatically extract a sample according to the present invention. For example, the system can automatically locate the locations of similar features on a semiconductor wafer containing multiple devices and acquire samples of those features on different (or the same) devices.

[0026] In some examples, the system controller 119 includes or is coupled with a code that, when executed by the system controller 119, causes the motor 170 to move the GIS 146, and consequently, the shutter 174 between an insertion or processing position and a retraction position. For example, the insertion or processing position may cause the shutter 174 to be aligned between the end of the SEM column 141 and the stage 125. In such a position, the shutter 174 may provide protective cover to the SEM column 141 and its components from redeposition of sputtered material or interaction of erroneously charged particles interacting with the processing gas during sample processing by the FIB 111. When no sample is being processed, the controller 119 can retract the GIS 146 and shutter 174 from the processing position to a retracted position that does not obstruct the SEM column 141.

[0027] Figure 2 shows a system 200 for providing protection to a charged particle column with a shutter, according to one embodiment of the present disclosure. The system 200 may be included, for example, in a microscope 100 or any charged particle microscope system that includes sample processing with charged particles such as sputtering, etching, and deposition. In some examples, the system 200 may be used to protect SEM column components from contamination and degradation caused by processing samples with an ion beam, such as a focused ion beam. In other examples, the system 200 may be used to protect transmission electron microscope (TEM) components from contamination and degradation caused by processing samples with an ion beam.

[0028] The system 200 includes a charged particle column 241 (or a portion thereof), a stage 225, a GIS nozzle 272 (or simply a nozzle 272), and a shutter 274. In some examples, a portion of the charged particle column 241 may be a pole piece of an SEM column. In other examples, a portion of the charged particle column 241 may be an electron-optical lens, such as the objective lens of a TEM.

[0029] Stage 225 may support a sample (not shown) for ion treatment and imaging using a charged particle column 241. Similar to Stage 125, Stage 225 may be coupled to a component that allows the stage to move in multiple directions, for example, one that can translate in three directions and rotate around one or more axes.

[0030] The focused ion beam 218 can be directed onto the sample on the stage 225 by a FIB column (not shown), such as FIB column 118. For simplicity, only the direction of the FIB 218 to the stage 225 is shown in the figure.

[0031] The shutter 274 is coupled to or incorporated into the end of the GIS nozzle 272, thereby aligning the shutter 274 between the stage 225 and the charged particle column 241 when the GIS nozzle 272 is in the insertion position 280. While the GIS nozzle 272 is in the insertion or processing position 280, the shutter 274 can protect the charged particle column 241 during sample processing by the FIB 218. For example, the FIB 218 approaches the stage 218 from an angle to the charged particle column 241 and moves below the shutter 274 to interact with the sample on the stage 225. This interaction may occur in the region below the shutter 274, preventing generated processing debris, such as sputtered material, from reaching and redepositing on or within the charged particle column 241. Furthermore, if the GIS nozzle 272 is supplying a processing gas for etching or deposition, the shutter 274 may prevent secondary or backscattered charged particles from reaching the column 241 and interacting with any present processing gas.

[0032] In some examples, a sputtering target (not shown) may be formed or coupled to a shutter 274 which can be used to deposit material onto a sample. For example, a solid source sputtering target of gold may be formed on the shutter 274, for example, in a position close to the shutter 274 where the FIB 218 is located. Then, in order to deposit gold from the sputtering target, the FIB 218 may be directed toward the sputtering target to remove material that can be deposited onto the sample on the stage 225.

[0033] If imaging needs to be performed by the charged particle column 241, the GIS nozzle 272 may be retracted to a retracted position 282 so that the shutter 274 does not obstruct any charged particle beam provided by the column 241. The movement of the GIS nozzle 272 may be performed by one or more motors (not shown), such as motor 170 in Figure 1. In some examples, the movement of the GIS nozzle 272 may be a simple back-and-forth movement between positions 280 and 282. In other examples, the movement of the GIS nozzle 272 may include translation and rotation around at least one axis so that the shutter 274 can be aligned with the optical axis of the charged particle column 241. In some examples, the shutter 274 includes an alignment mark on the side facing the charged particle column 241, and the alignment mark may be imaged to help align the shutter 274 with the optical axis of the charged particle column 241.

[0034] Figures 3A to 3D show examples of shutters 374 and alignment marks 376 according to embodiments of the present disclosure, respectively. Each of the examples of shutters 374A to 374C may be used in, for example, systems 100, 200, or 400.

[0035] Figure 3A is a cross-sectional view of an example of shutter 374A according to an embodiment of the present disclosure. The shutter 374A has a crescent shape, with the concave side 378A facing the stage / sample area and the convex side 379A facing the charged particle column component. The side surface 379A may also be the side surface / surface where the alignment marks are located. Figure 3B is similar to 374A except that the cross-sectional shape is flat instead of crescent.

[0036] Figure 3C is a cross-sectional view of an example of a shutter 374C according to an embodiment of the present disclosure. The shutter 374C is cylindrical with an inner surface 378C and an outer surface 379C. The shutters 374C may be arranged such that the working area of ​​the sample is within the shutter 374C. Although not shown, the shutter 374C may have a hole, slit, or recess cut out from one side to accommodate an ion beam for sample interaction.

[0037] Figure 3D shows an example of an alignment mark 376 according to an embodiment of the present disclosure. The alignment mark 376 may be any pattern or structure formed on or within the shutter that can be imaged by a charged particle beam. The illustrated plus sign alignment mark should not be considered limiting in any way.

[0038] Figure 4 shows an example of system 400 according to an embodiment of the present disclosure. The example of system 400 shows a part of a charged particle microscope, such as microscope 100, including a shutter for protecting the charged particle column components. Many of the features of system 400 are the same as those shown in system 200 and will not be described again for brevity. Further features of system 400 include a voltage source 486, an amplifier 482, and a detection / imaging system 484. The combination of these features enables the shutter to provide imaging capabilities in addition to protection of the charged particle column.

[0039] The amplifier 482 may be configured, for example, to be electrically coupled to the shutter 474 via conductive leads to amplify the current signal received from the shutter 474. The detection and imaging system 484 may convert the current signal received from the amplifier 482 into an image for display to or recording to the user. Since the shutter 474 may block a charged particle column 441 which may contain a detector used for imaging, the detection and imaging system 484 may provide a detection scheme when the shutter 474 is in the insertion position. The voltage source 486 may be coupled to the stage 425 to bias the stage with either a positive or negative voltage.

[0040] In operation, further components of system 400 are capable of imaging the sample during FIB processing and while the shutter 474 is in the insertion position. For example, with stage 425 biased by voltage source 486, secondary electrons generated during sample processing by FIB 418 can be directed away from stage 425 to shutter 474. The secondary electrons can then be collected by shutter 474, which generates a current. The generated current can then be amplified by amplifier 482 and supplied to detection and imaging system 484. The detection and imaging system 484 may then form an image of the sample based on this current.

[0041] Figure 5 shows an example of Method 501 according to embodiments of the present disclosure. Method 501 may be performed by a charged particle microscope including a shutter mounted on a retractable GIS system. For example, Method 501 may be performed by microscope 100. An example of Method 501 may be used to position the shutter at the processing / insertion position during FIB processing of a sample and to retract the shutter when not needed. By positioning the shutter at the processing position during FIB processing, the charged particle column components may be protected by the shutter (e.g., covered), resulting in reduced or prevented undesirable deposition or redeposition of material.

[0042] Method 501 begins with processing block 503, which includes translating a shutter (the shutter is coupled to a gas injection nozzle) within a position between the charged particle column and the stage. The gas injection nozzle may be part of a GIS system that includes a motor coupled to move the nozzle to a predetermined position. The motor may also be rotated to move the nozzle in other directions and align the shutter with the optical axis of the charged particle column.

[0043] Processing block 503 may be followed by processing block 505, which includes aligning the shutter to the optical axis of the charged particle column. This alignment may be based on an image acquired by the charged particle column of alignment marks formed on the shutter. The alignment marks are formed on the side of the shutter facing the charged particle column. Alignment of the shutter to the charged particle column includes both linear alignment in the orthogonal X, Y, Z directions and rotation around the axis of the GIS system. Once the shutter is inserted and aligned, FIB processing of the sample may proceed while sensitive components of the charged particle column are protected from degradation.

[0044] Figure 6 is an example of a functional block diagram 600 according to an embodiment of the present disclosure. Figure 6 is a block diagram of a computer system 600 which may include an example of a microscope implementing the disclosed technology. The computing system 600 may be an example of computing hardware, such as a controller 119, included in the microscope 100, 200, or 400. The computer system 600 includes at least a hardware processor (e.g., a core 630, main memory 632, RIM 634, storage device 636, and communication interface 638). The hardware processor 642 may be, for example, a general-purpose microprocessor. The computing system 600 may be used to implement methods and techniques disclosed herein, such as method 501.

[0045] Main memory 632, which may be random access memory (RAM) or other dynamic storage devices, is combined to store information and instructions executed by the processor 630. Main memory 632 may also be used to store temporary variables or other intermediate information during the execution of instructions by the processor 630. When stored in a non-temporary storage medium accessible to the processor 630, such instructions make the computer system 600 a dedicated machine customized to perform the operations specified by the instructions.

[0046] A read-only memory (ROM) 634 or other static storage device is coupled to store static information and instructions for the processor 630. A storage device 636, such as a magnetic disk or optical disk, is provided and coupled to store information and instructions.

[0047] The computer system 600 may implement the techniques described herein by combining customized hardwired logic, one or more ASICs or FPGAs, firmware, and / or the computer system with program logic to make the computer system 600 a dedicated machine or to program it in such a way. According to one embodiment, the techniques described herein are executed by the computer system 600 in response to a processor 630 that executes one or more sequences of one or more instructions contained in main memory 632. Such instructions may be read into main memory 632 from another storage medium, such as a storage device 636. By executing the sequence of instructions contained in main memory 632, the processor 30 performs the processing steps described herein. In alternative embodiments, hardwired circuits may be used instead of, or in combination with, software instructions.

[0048] As used herein, the term “storage medium” refers to any non-temporary medium that stores data and / or instructions that cause a machine to operate in a particular manner. Such storage mediums may include non-volatile media and / or volatile media. Non-volatile media include, for example, optical or magnetic disks such as storage device 636. Volatile media include dynamic memory such as main memory 632. Common forms of storage media include, for example, floppy disks, flexible disks, hard disks, solid-state drives, magnetic tapes or any other magnetic data storage media, CD-ROMs, any other optical data storage media, any physical media with a pattern of holes, RAM, PROMs, EPROMs, FLASH®-EPROMs, NVRAMs, any other memory chips or cartridges, associative memory (CAM), and tertiary associative memory (TCAM).

[0049] A storage medium is distinct from a transmission medium, but can be used in conjunction with one. A transmission medium is involved in the transfer of information between storage mediums. For example, a transmission medium includes coaxial cables, copper wires, and optical fibers, which connect the components of a computer system 600 to one another. A transmission medium can also take the form of acoustic or optical waves, such as those generated during radio and infrared data communications.

[0050] The computer system 600 also includes a communication interface 638. The communication interface 638 provides bidirectional data communication that connects to the network and / or other components of the microscope. For example, the communication interface 638 may be an Integrated Services Digital Network (ISDN) card, a cable modem, a satellite modem, or a modem that provides data communication connectivity to a corresponding form of telephone line. As another example, the communication interface 638 may be a local area network (LAN) card that provides data communication connectivity to a compatible LAN. Wireless links may also be implemented. In any such implementation, the communication interface 656 transmits and receives electrical, electromagnetic, or optical signals that carry digital data streams representing various forms of information.

[0051] The embodiments considered herein for illustrative purposes of the disclosed technology should not be considered limiting, but merely provide examples of implementation. For example, the shutter can be formed in any shape that can cover various components of the charged particle column. Those skilled in the art will understand the countless other ways in which the disclosed technology can be implemented that are assumed herein and within the scope of this disclosure.

Claims

1. An apparatus comprising: an SEM column and a focused ion beam column (FIB column); a gas injection nozzle coupled to a translation device, the translation device being configured to insert the gas injection nozzle into a processing position; a shutter coupled to the gas injection nozzle and arranged to be disposed between a sample on a stage and the SEM column when the gas injection nozzle is inserted into the processing position.

2. The shutter is arranged to protect components of the SEM column while processing the sample using the FIB column. The apparatus according to claim 1.

3. The apparatus according to claim 1, wherein the shutter includes one or more alignment marks disposed on a side facing the SEM column.

4. The apparatus according to claim 3, wherein the SEM column acquires one or more images and aligns the shutter with the optical axis of the SEM column such that the shutter covers the SEM column.

5. The apparatus according to claim 1, wherein the shutter is arranged such that a focused ion beam provided by the FIB column is not blocked by the shutter when directed towards the stage.

6. a voltage source coupled to the stage; a current amplifier coupled to the shutter; an imaging system coupled to the current amplifier; and further comprising the apparatus according to claim 1.

7. A method comprising: translating a shutter into a position between components of a charged particle column and a stage using a translation device of a charged particle microscope, the shutter being coupled to a gas injection nozzle; aligning the shutter with the optical axis of the charged particle column based on an image of an alignment mark formed on the shutter, the alignment mark facing the charged particle column.

8. Aligning the shutter with the optical axis of the charged particle column based on an alignment mark disposed on the shutter includes: acquiring one or more images of the alignment mark using the charged particle column. Based on the one or more acquired images, translating the shutter in the x, y, or z direction to align the alignment mark with the optical axis of the charged particle column, the method according to claim 7, comprising:

9. Based on an alignment mark disposed on the shutter, aligning the shutter with the optical axis of the charged particle column, acquiring one or more images of the alignment mark using the charged particle column, Based on the one or more acquired images, rotating the shutter about the axis of the shutter to ensure roll alignment of the shutter to the optical axis of the charged particle column, the method according to claim 7, comprising:

10. Processing a sample with a focused ion beam using an ion beam with the shutter arranged between the component of the charged particle column and the stage, the sample being disposed on the stage, further comprising processing, the method according to claim 7,

11. Further comprising providing a processing gas to the surface of the sample using the gas injection nozzle, the method according to claim 7,

12. An apparatus, a charged particle column, a stage arranged in the vicinity of the charged particle column, the stage being configured to support a sample, a stage, a gas injection system including a nozzle at a distal end, the gas injection system being coupled to a moving device, the gas injection system being further coupled to a gas source for delivery of gas, a gas injection system, a shutter coupled to the distal end of the gas injection system, a controller coupled to at least control the moving device, the controller being coupled to or including computer instructions, when the computer instructions are executed by the controller, to the controller, inserting the gas injection system into a processing position such that gas is delivered to the surface of a sample disposed on the stage, a controller; comprising an apparatus in which the shutter is inserted into a position between the stage and a component of the charged particle column.

13. The apparatus according to claim 12, wherein the shutter includes an alignment mark disposed on a side facing the pole piece.

14. The apparatus according to claim 1 or 12, wherein the shutter includes a sputter target.

15. The apparatus according to claim 12, further comprising a focused ion beam column arranged to direct a focused ion beam towards the sample when the shutter is inserted.

16. The apparatus according to claim 6 or 12, wherein the shutter is crescent-shaped and the concave side faces the stage.

Images