Devices including low refractive index coatings and radiation-modifying layers

Abstract

A semiconductor device having multiple layers deposited on a substrate, the multiple layers extending in at least one lateral plane defined by a lateral axis of the semiconductor device, includes at least one lower refractive index coating disposed on a first layer surface and at least one EM radiation modification layer embedded within the at least one lower refractive index coating and including at least one grain structure comprising the deposited material. Embedding the at least one grain structure of the at least one EM radiation modification layer within the at least one lower refractive index coating modifies the absorption spectrum of the at least one EM radiation modification layer for EM radiation passing at least partially through the at least one EM radiation modification layer at a non-zero angle relative to the internal lateral plane over at least a portion of the EM spectrum. A lower portion including the first at least one lower refractive index coating can be disposed between the first layer surface and the at least one EM radiation modification layer, and a second portion including the second at least one lower refractive index coating can be disposed on the at least one EM radiation modification layer.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application is a continuation of U.S. Provisional Patent Application No. 63 / 090,098 filed October 9, 2020, U.S. Provisional Patent Application No. 63 / 107,393 filed October 29, 2020, U.S. Provisional Patent Application No. 63 / 122,421 filed December 7, 2020, U.S. Provisional Patent Application No. 63 / 141,857 filed January 26, 2021, U.S. Provisional Patent Application No. 63 / 141,857 filed February 25, 2021, U.S. This application claims the benefit of priority to U.S. Provisional Application No. 63 / 153,834, filed March 8, 2021, U.S. Provisional Application No. 63 / 158,185, filed March 19, 2021, and U.S. Provisional Application No. 63 / 163,453, filed March 19, 2021, and U.S. Provisional Application No. 63 / 181,100, filed April 28, 2021, the contents of each of which are incorporated herein by reference in their entirety.

[0002] The present disclosure relates to layered semiconductor devices, and in particular to optoelectronic devices having first and second electrodes separated by a semiconductor layer, having a conductive deposition material deposited thereon, and patterned using a nucleation-inhibiting coating (NIC) and / or a patterning coating that can function as such a NIC. [Background technology]

[0003] In an optoelectronic device, such as an organic light emitting diode (OLED), at least one semiconductor layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and generate holes and electrons, respectively, that migrate toward each other through the at least one semiconductor layer. When a hole-electron pair combines, a photon can be emitted.

[0004] OLED display panels can comprise multiple (sub)pixels, each with an associated electrode pair. The various layers and coatings of such panels are typically formed by vacuum-based deposition processes.

[0005] In some applications, it may be desirable to provide a conductive and / or electrode coating in the pattern of each (sub)pixel of the panel across either or both of its surface and cross-sectional surface by selectively depositing at least one thin film of a conductive coating during the OLED manufacturing process to form device features such as, but not limited to, electrodes and / or conductive elements electrically coupled to the electrodes.

[0006] In some applications, it may be a goal to make the device substantially transparent while still allowing light to be emitted from the device. In some applications, the device includes a plurality of light-emitting regions disposed between a plurality of light-transmitting regions or subpixels. Because light-emitting regions generally include layers, coatings, and / or components that attenuate or suppress transmission of ambient light through such regions, light-transmitting regions generally are provided in non-emissive regions of the display panel, where the presence of such layers, coatings, and / or components that attenuate or suppress transmission of ambient light may be omitted therefrom.

[0007] One method for doing so involves the interposition of a fine metal mask (FMM) during the deposition of deposition materials, which in some non-limiting applications include electrodes and / or conductive elements electrically coupled thereto, and / or EM radiation-modifying layers. However, such deposition materials typically have relatively high evaporation temperatures, which impact the ability to reuse the FMM and / or the pattern accuracy that can be achieved, with attendant increases in cost, effort, and complexity.

[0008] One method for doing so, in some non-limiting examples, involves depositing an electrode material and then removing unwanted areas thereof (including by a laser drilling process) to form a pattern. However, the removal process often involves the creation and / or presence of debris, which can affect the yield of the manufacturing process.

[0009] Furthermore, such methods may not be suitable for some applications and / or for use with some devices involving particular topographical features.

[0010] In some non-limiting applications, the objective may be to increase photon transmission and / or reduce photon absorption, including but not limited to, by providing selective deposition of deposition material to provide improved mechanisms along the optical path through at least a portion of the device in at least a wavelength subrange of the electromagnetic (EM) spectrum.

[0011] In some non-limiting applications, the goal may be to provide a mechanism for depositing thin dispersed layers of metal NPs within optoelectronic devices, which may affect the performance of the device in terms of optical properties, performance, stability, reliability, and / or lifetime. The present invention provides, for example, the following. (Item 1) 1. A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral direction defined by a lateral axis of the semiconductor device, the semiconductor device comprising: at least one lower(er) refractive index coating disposed on the first layer surface; and at least one electromagnetic (EM) radiation modifying layer embedded within the at least one lower refractive index coating, the at least one grain structure comprising a deposited material, wherein the embedding of the at least one grain structure of the at least one EM radiation modifying layer within the at least one lower refractive index coating modifies the absorption spectrum of the at least one EM radiation modifying layer for EM radiation that at least partially passes through the at least one EM radiation modifying layer at a non-zero angle relative to the lateral direction of the device over at least a portion of the EM spectrum. (Item 2) Item 10. The device of item 1, wherein the at least one lower refractive index coating comprises a lower portion disposed between the first layer surface and the at least one EM radiation modifying layer, and an upper portion disposed on the at least one EM radiation modifying layer. (Item 3) Item 3. The device of item 2, wherein the lower portion includes a first lower refractive index coating and the second portion includes a second lower refractive index coating. (Item 4) 4. The device of any one of items 1-3, further comprising a higher refractive index medium disposed at the refractive index interface with the exposed layer surfaces of the plurality of lower refractive index coatings such that the EM radiation modifying layer is disposed between the first layer surface and the refractive index interface. (Item 5) Item 5. The device of item 4, wherein the higher refractive index medium comprises an organic compound. (Item 6) 6. The device of claim 4 or 5, wherein the higher refractive index medium comprises a capping layer of the device. (Item 7) 7. The device of any one of items 4 to 6, further comprising an air gap disposed across the higher refractive index medium. (Item 8) 8. The device of any one of items 4 to 7, wherein the higher refractive index medium comprises a higher refractive index layer deposited on the refractive index interface. (Item 9) 9. The device according to any one of items 4 to 8, wherein the higher refractive index medium is substantially transparent. (Item 10) 10. The device of any one of items 4 to 9, wherein the higher refractive index medium comprises lithium fluoride (LiF). (Item 11) 11. The device of any one of items 4 to 10, wherein the extinction coefficient of the higher refractive index medium is at least one of about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, and about 0.01 or less, at least in a subrange of the visible range of the EM spectrum. (Item 12) Item 12. The device of any one of items 1-11, wherein the EM radiation modifying layer comprises a discontinuous layer of the at least one particle cluster. (Item 13) 13. The device of any one of items 1 to 12, wherein the first(er) lower refractive index coating is composed of a first lower refractive index material and the second(er) lower refractive index coating is composed of a second lower refractive index material. (Item 14) Item 14. The device of item 13, wherein the first low refractive index material and the second low refractive index material are the same. (Item 15) 15. The device of claim 13 or 14, wherein at least one of the first(er) lower refractive index coating and the first lower refractive index material, and at least one of the second(er) lower refractive index coating and the second lower refractive index material, has a refractive index that is at least one of about 1.7 or less, about 1.6 or less, about 1.5 or less, about 1.45 or less, about 1.4 or less, about 1.35 or less, about 1.3 or less, and about 1.25 or less. (Item 16) 16. The device of any one of items 13-15, wherein at least one of the first(er) lower refractive index coating and the first lower refractive index material, and at least one of the second(er) lower refractive index coating and the second lower refractive index material, has a refractive index that is at least one of about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to 1.45, and about 1.25 to 1.4. (Item 17) 17. The device of any one of items 13-16, wherein at least one of the first(er) lower refractive index coating and the first lower refractive index material, and at least one of the second(er) lower refractive index coating and the second lower refractive index material, has an extinction coefficient that is at least one of about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, and about 0.01 or less in the visible wavelength range of the EM spectrum. (Item 18) 18. The device of any one of items 1 to 17, wherein at least one of the plurality of lower refractive index coatings is substantially transparent. (Item 19) 19. The device of any one of items 1 to 18, wherein an average layer thickness of at least one of the plurality of lower refractive index coatings is at least one of about 60 nm or less, about 50 nm or less, about 40 nm or less, about 30 nm or less, about 20 nm or less, about 10 nm or less, about 8 nm or less, and about 5 nm or less. (Item 20) 20. The device of any one of items 1-19, wherein the absorption capability is at least one of increasing absorption, decreasing absorption, upward shifting a wavelength range, downward shifting a wavelength range, and any combination of any of these, of the absorption spectrum of EM radiation passing through the device. (Item 21) 21. The device of any one of items 1 to 20, wherein the portion of the EM spectrum corresponds to at least one of the visible range, the infrared (IR) range, the near-infrared (NIR) range, the ultraviolet (UV) range, the UV-A range, the UV-B range, a sub-range of any of these, and any combination of any of these, of the EM spectrum. (Item 22) 22. The device of any one of items 1 to 21, wherein the deposited material is a metal. (Item 23) Item 23. The device of item 22, wherein the deposited material comprises at least one of magnesium, silver, and ytterbium. (Item 24) 24. The device of any one of items 1 to 23, wherein the deposition material is co-deposited with a co-deposited dielectric material. (Item 25) 25. The device of any one of items 1 to 24, wherein the at least one particle structure has unique characteristics selected from at least one of size, size distribution, shape, surface coverage, configuration, deposition density, and composition. (Item 26) 26. The device of item 25, wherein the at least one particle structure has a coverage of at least one of about 10-50%, about 10-45%, about 12-40%, about 15-40%, about 15-35%, about 18-35%, about 20-35%, and about 20-30%. (Item 27) 27. The device of claim 25 or 26, wherein a majority of the at least one particle structure has a maximum feature size of less than or equal to at least one of about 40 nm, about 35 nm, about 30 nm, about 25 nm, and about 20 nm. (Item 28) 28. The device of any one of items 25 to 27, wherein the at least one particle structure has a feature size that is at least one of a mean and a median of at least one of about 5 to 40 nm, about 5 to 30 nm, about 8 to 30 nm, about 10 to 30 nm, about 8 to 25 nm, about 10 to 25 nm, about 8 to 20 nm, about 10 to 20 nm, about 10 to 15 nm, and about 8 to 15 nm. (Item 29) 29. The device of any one of items 1 to 28, wherein the at least one grain structure comprises a seed around which the deposition material tends to coalesce. (Item 30) a patterned coating disposed on the second layer surface; the first layer surface is an exposed layer surface of the patterned coating; 30. The device of any of items 1 to 29, wherein an initial sticking probability resisting deposition of the deposition material onto a surface of the patterned coating is substantially less than at least one of 0.3 and the initial sticking probability resisting deposition of the deposition material onto a surface of the second layer, such that the patterned coating is substantially devoid of a closure coat of the deposition material. (Item 31) Item 31. The device of item 30, wherein the patterning coating comprises at least one patterning material. (Item 32) Item 32. The device of item 30 or 31, wherein the patterning coating comprises a first patterning material having a first initial sticking probability that resists deposition of the deposition material, and a second patterning material having a second initial sticking probability that resists deposition of the deposition material, wherein the first initial sticking probability is substantially less than the second initial sticking probability. (Item 33) Item 33. The device of item 32, wherein the first patterning material is a nucleation-inhibiting coating (NIC) material and the second patterning material is selected from at least one of an electron transport layer (ETL) material, Liq, and lithium fluoride (LiF). (Item 34) 34. The device of any one of items 1 to 33, wherein the layer extends across a first portion and a second portion in the at least one lateral direction, the at least one EM radiation-modifying layer extends across the first portion, and the device is adapted to pass at least one EM signal through the first portion at a non-zero angle relative to the layer. (Item 35) Item 35. The device of item 34, wherein the at least one EM signal has a wavelength range within at least a portion of at least one of the IR spectrum and the NIR spectrum. (Item 36) Item 36. The device of item 34 or 35, wherein the first portion is substantially devoid of a closure coat of the deposition material. (Item 37) Item 37. The device according to any one of items 34 to 36, wherein the first portion corresponds to at least a part of a signal transmitting region. (Item 38) 38. The device of any one of items 34 to 37, wherein the device is adapted to accept the at least one EM signal through the device for exchange with at least one under-display component. (Item 39) the at least one under-display component: a receiver adapted to receive the at least one EM signal passing through the device; and Item 39. The device of item 38, comprising at least one of the transmitters adapted to radiate. (Item 40) Item 40. The device of item 39, wherein the receiver is an IR detector and the transmitter is an IR emitter. (Item 41) 41. The device of claim 39 or 40, wherein the transmitter emits a first EM signal and the receiver detects a second EM signal that is a reflection of the first EM signal. (Item 42) Item 42. The device of item 41, wherein the exchange of the first and second EM signals provides biometric authentication of a user. (Item 43) 43. A device according to any one of items 38 to 42, wherein the device forms a display panel of a user device, the display panel surrounding the under-display component. (Item 44) 44. The device of any one of items 34 to 43, wherein the second portion includes at least one radiating region for radiating the at least one EM signal at a non-zero angle relative to the layer. (Item 45) further comprising at least one semiconductor layer disposed over the device layer; each emitting region includes a first electrode and a second electrode; the first electrode is disposed between the substrate and the at least one semiconductor layer; Item 45. The device of item 44, wherein the at least one semiconductor layer is disposed between the first electrode and the second electrode. (Item 46) Item 46. The device of item 45, further comprising at least one closure coat of the deposition material disposed on an exposed layer surface of the device in the second portion. (Item 47) Item 47. The device of item 46, wherein the second electrode comprises the at least one occlusive coating of the deposition material. [Brief explanation of the drawings]

[0012] Examples of the present disclosure will now be described with reference to the following figures, in which identical reference numbers in different figures indicate identical, and / or in some non-limiting examples, similar and / or corresponding elements: [Figure 1] FIG. 1 is a simplified block diagram from a cross-sectional view of an exemplary device having multiple layers in a lateral direction with at least one layer of particle structure disposed therein and at least one lower refractive index layer having a high refractive index medium disposed thereon, according to one example. [Figure 2] 1 is a graph plotting refractive index values ​​as a function of surface tension for various exemplary materials, according to an embodiment. [Figure 3] 2 is an exemplary schematic diagram illustrating a partially cutaway plan view of the device of FIG. 1 including at least one lower refractive index layer underlying an EM radiation modifying layer including at least one particle structure, and including a higher refractive index layer deposited thereon, according to an example of the present disclosure; [Figure 4] FIG. 2 is a simplified block diagram from a cross-sectional view of an exemplary version of the device of FIG. 1 in which an underlying lower refractive index layer serves as an EM layer patterning coating, according to an example of the present disclosure. [Figure 5A] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5B] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5C] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5D] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5E] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5F] 5A-5E are charts of transmittance at various wavelengths based on an analysis of the micrographs of FIGS. 5A-5E. [Figure 5G] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5H] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5I] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5J] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5K] 5G-5J are charts of transmittance at various wavelengths based on an analysis of the micrographs of FIGS. 5G-5J. [Figure 5L] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5M] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5N] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5O] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 5P] 5A-5C are charts of transmittance at various wavelengths based on an analysis of the micrographs of FIGS. 5L-5O. [Figure 6A] 2 is a schematic diagram illustrating the EM radiation modifying layer of FIG. 1 proximate an emitting region of the device of FIG. 1 formed by deposition of a patterned film followed by deposition of multiple seeds to form a grain structure according to an example of the present disclosure. [Figure 6B]FIG. 6B is a schematic diagram illustrating a version of the EM radiation modifying layer of FIG. 6A formed by depositing a patterned coating before depositing a plurality of seeds, according to an example of the present disclosure. [Figure 7] 1 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary user device having a display panel with multiple layers including at least one opening therein, according to an example of the present disclosure. [Figure 8A] 8 is a schematic diagram illustrating the use of the user device of FIG. 7, in which at least one aperture is embodied by at least one signal transmission area, to exchange EM radiation in the IR and / or NIR spectrum for the purpose of biometric authentication of a user, according to an example of the present disclosure. [Figure 8B] 8 is a plan view of the user device of FIG. 7 including a display panel according to an example of the present disclosure. [Figure 8C] 8C shows a cross-sectional view taken along line 8C-8C of the device shown in FIG. 8B. [Figure 8D] 8 is a plan view of the user device of FIG. 7 including a display panel according to an example of the present disclosure. [Figure 8E] 8E shows a cross-sectional view taken along line 8E-8E of the device shown in FIG. 8D. [Figure 8F] 8 is a plan view of the user device of FIG. 7 including a display panel according to an example of the present disclosure. [Figure 8G] 8G shows a cross-sectional view taken along line 8G-8G of the device shown in FIG. 8F. [Figure 8H] 1 shows an enlarged plan view of a portion of a panel according to an example of the present disclosure. [Figure 9A] 1A-1C are simplified block diagrams from cross-sectional views of various examples of an exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at a non-zero angle to a layer of the display panel therethrough, according to one example of the present disclosure. [Figure 9B]1A-1C are simplified block diagrams from cross-sectional views of various examples of an exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at a non-zero angle to a layer of the display panel therethrough, according to one example of the present disclosure. [Figure 9C] 1A-1C are simplified block diagrams from cross-sectional views of various examples of an exemplary user device having a display panel for covering a body and at least one under-display component housed therein for exchanging EM signals at a non-zero angle to a layer of the display panel therethrough, according to one example of the present disclosure. [Figure 10A] 1 shows multiple SEM images of an illustrative example, each according to an example of the present disclosure, along with a plot of the number distribution of particles of various unique sizes therein. [Figure 10B] 1 shows multiple SEM images of an illustrative example, each according to an example of the present disclosure, along with a plot of the number distribution of particles of various unique sizes therein. [Figure 10C] 1 shows multiple SEM images of an illustrative example, each according to an example of the present disclosure, along with a plot of the number distribution of particles of various unique sizes therein. [Figure 10D] 1 shows multiple SEM images of an illustrative example, each according to an example of the present disclosure, along with a plot of the number distribution of particles of various unique sizes therein. [Figure 10E] 1 shows multiple SEM images of an illustrative example, each according to an example of the present disclosure, along with a plot of the number distribution of particles of various unique sizes therein. [Figure 11A] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 11B] 1 is a SEM micrograph of an example made in accordance with an embodiment of the present disclosure. [Figure 11C] 11A-11B are charts of average diameters based on analysis of the micrographs of FIGS. [Figure 12]FIG. 1 is a simplified block diagram from a cross-sectional view of an exemplary device having multiple layers in a lateral direction formed by selective deposition of a patterned film in a first portion of the lateral direction, followed by deposition of a closure film of deposition material in a second portion thereof, according to one example of the present disclosure. [Figure 13] 1 is a plot of photoluminescence intensity as a function of wavelength for various experimental examples. [Figure 14] 1 is a plot of transmission attenuation as a function of wavelength for various experimental examples. [Figure 15] 13A-13C are schematic diagrams illustrating an exemplary process for depositing a patterned coating in a pattern onto an exposed layer surface of an underlying layer in an exemplary version of the device of FIG. 12, according to one example of the present disclosure. [Figure 16] 13 is a schematic diagram illustrating an exemplary process for depositing a deposition material onto a second portion of an exposed layer surface including the deposition pattern of the patterned coating of FIG. 12, where the patterned coating is a nucleation-inhibiting coating (NIC). [Figure 17A] FIG. 13 is a schematic diagram illustrating an exemplary version of the device of FIG. 12 in cross-section. [Figure 17B] 17B is a schematic diagram illustrating the device of FIG. 17A in a complementary plan view. [Figure 17C] FIG. 13 is a schematic diagram illustrating an exemplary version of the device of FIG. 12 in cross-section. [Figure 17D] 17D is a schematic diagram illustrating the device of FIG. 17C in a complementary plan view. [Figure 17E] FIG. 13 is a schematic diagram illustrating an example of the device of FIG. 12 in a cross-sectional view. [Figure 17F] FIG. 13 is a schematic diagram illustrating an example of the device of FIG. 12 in a cross-sectional view. [Figure 17G] FIG. 13 is a schematic diagram illustrating an example of the device of FIG. 12 in cross section. [Figure 18A] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18B]13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18C] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18D] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18E] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18F] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18G] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18H] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 18I] 13A-13C are schematic diagrams illustrating various potential behaviors of a patterned coating at a deposition interface with a deposited layer in an exemplary version of the device of FIG. 12, according to various examples of the present disclosure. [Figure 19] 1 is a block diagram of an exemplary electroluminescent device from a cross-sectional view according to one example of the present disclosure. [Figure 20] FIG. 20 is a cross-sectional view of the device of FIG. 19. [Figure 21] FIG. 20 is a schematic diagram illustrating, in plan view, an exemplary patterning electrode suitable for use in a version of the device of FIG. 19, according to one example of the present disclosure. [Figure 22]22 is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 21 taken along line 22-22. [Figure 23A] 20 is a schematic diagram illustrating, in plan view, several exemplary patterns of electrodes suitable for use in an exemplary version of the device of FIG. 19, according to one example of the present disclosure. [Figure 23B] 23B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 23A at an intermediate stage taken along line 23B-23B. [Figure 23C] FIG. 23C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 23A taken along line 23C-23C. [Figure 24] FIG. 20 is a schematic diagram illustrating a cross-sectional view of an exemplary version of the device of FIG. 19 with an exemplary patterning assisting electrode, according to an example of the present disclosure. [Figure 25] 1 is a schematic diagram illustrating, in plan view, an exemplary pattern of auxiliary electrodes overlapping at least one emitting region and at least one non-emitting region, according to an example of the present disclosure. [Figure 26A] 20 is a schematic diagram illustrating, in plan view, an example pattern of an example version of the device of FIG. 19 having multiple groups of diamond-configured emitting regions, according to an example of the present disclosure. [Figure 26B] FIG. 26B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 26A taken along line 26B-26B. [Figure 26C] FIG. 26C is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 26A taken along line 26C-26C. [Figure 27] FIG. 21 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 20 having an additional exemplary deposition step, according to one example of the present disclosure. [Figure 28] FIG. 21 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 20 having an additional exemplary deposition step, according to one example of the present disclosure. [Figure 29] FIG. 21 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 20 having an additional exemplary deposition step, according to one example of the present disclosure. [Figure 30] FIG. 21 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 20 having an additional exemplary deposition step, according to one example of the present disclosure. [Figure 31A] FIG. 20 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 19 including at least one exemplary pixel area and at least one exemplary light-transmitting area having at least one auxiliary electrode, according to an example of the present disclosure. [Figure 31B] FIG. 31B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 31A taken along line 31B-31B. [Figure 32A] FIG. 20 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 19 including at least one example pixel region and at least one example light-transmitting region, according to an example of the present disclosure. [Figure 32B] FIG. 32B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 32A taken along line 32-32. [Figure 32C] FIG. 32B is a schematic diagram illustrating an exemplary cross-sectional view of the device of FIG. 32A taken along line 32-32. [Figure 33] 21A-21C are schematic diagrams that may illustrate exemplary stages in an exemplary process for fabricating an exemplary version of the device of FIG. 20 having subpixel regions with second electrodes of different thicknesses, according to an example of the present disclosure. [Figure 34] FIG. 20 is a schematic diagram illustrating an exemplary cross-sectional view of an exemplary version of the device of FIG. 19, in which the second electrode is coupled with an auxiliary electrode, according to an example of the present disclosure. [Figure 35] 20 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 19 having a partition and a shielding region, such as a recess, in a non-emitting region, according to an example of the present disclosure. [Figure 36A] 20A-20C are schematic diagrams illustrating example cross-sectional views of example versions of the device of FIG. 19 having partitions and shielding regions, such as openings, in non-emitting regions, according to various examples of the present disclosure. [Figure 36B]20A-20C are schematic diagrams illustrating example cross-sectional views of example versions of the device of FIG. 19 having partitions and shielding regions, such as openings, in non-emitting regions, according to various examples of the present disclosure. [Figure 37A] 20A-20C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 19 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 37B] 20A-20C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 19 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 37C] 20A-20C are schematic diagrams illustrating exemplary stages of an exemplary process for depositing a deposition layer in a pattern on an exposed layer surface of an exemplary version of the device of FIG. 19 by a selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 38] 1 is an exemplary energy profile illustrating the relative energy states of adatoms adsorbed on a surface, according to an example of the present disclosure. [Figure 39] FIG. 1 is a schematic diagram illustrating the formation of membrane nuclei according to an example of the present disclosure.

[0013] In this disclosure, a reference number accompanied by at least one numerical value (including, but not limited to, a suffix) and / or lowercase alphabetic character (including, but not limited to, a lowercase character) may be considered to refer to a particular instance of the element or feature described by that reference number and / or a subset thereof. Reference to a reference number without reference to an accompanying value and / or character may refer generally to the element or feature described by the reference number and / or to the set of all instances described thereby, as the context dictates. Similarly, a reference number may have the letter "x" in place of a number. Reference to such a reference number may refer generally to the element or feature described by the reference number with the letter "x" replaced by the number, and / or to the set of all instances described thereby, as the context dictates.

[0014] In this disclosure, for purposes of explanation and not limitation, specific details are set forth, including, but not limited to, particular architectures, interfaces, and / or techniques, to provide a thorough understanding of the present disclosure. In some instances, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications are omitted so as not to obscure the description of the present disclosure with unnecessary detail.

[0015] It will also be appreciated that the block diagrams reproduced herein may represent conceptual views of illustrative components embodying the principles of the present technology.

[0016] Accordingly, the components of the systems and methods have been represented, where necessary, by conventional symbols in the drawings so as not to obscure the disclosure with details that will be readily apparent to those skilled in the art having the benefit of the description herein, and only those specific details relevant to understanding the examples of the disclosure have been shown.

[0017] Any drawings provided herein may not be drawn to scale and may not be considered as limiting the present disclosure in any way.

[0018] Any features or actions shown in dashed outline may, in some instances, be considered optional. Summary of the Invention

[0019] It is an object of the present disclosure to obviate or mitigate at least one disadvantage of the prior art.

[0020] The present disclosure provides a method for manufacturing a semiconductor device comprising: depositing a semiconductor device on a substrate; Lateral direction The present invention discloses a semiconductor device having multiple layers extending from a first layer surface to a second layer surface, the device including at least one lower refractive index coating disposed on a first layer surface, and at least one EM radiation modifying layer embedded within the at least one lower refractive index coating, the at least one grain structure including a deposited material. By embedding the at least one grain structure of the at least one EM radiation modifying layer within the at least one lower refractive index coating, the device provides enhanced signal transduction within at least a portion of the EM spectrum. Lateral direction The at least one EM radiation modifying layer has an absorption spectrum for EM radiation that at least partially passes through the at least one EM radiation modifying layer at a non-zero angle relative to the at least one EM radiation.

[0021] According to a broad aspect, a method for manufacturing a semiconductor device includes depositing a plurality of layers on a substrate, the method comprising: Lateral direction and at least one lower refractive index coating disposed on a first layer surface, and at least one electromagnetic (EM) radiation modifying layer embedded within the at least one lower refractive index coating, the at least one grain structure comprising a deposited material, wherein embedding the at least one grain structure of the at least one EM radiation modifying layer within the at least one lower refractive index coating provides an internal Lateral direction The at least one EM radiation modifying layer has an absorption spectrum for EM radiation that at least partially passes through the at least one EM radiation modifying layer at a non-zero angle relative to the at least one EM radiation.

[0022] In some non-limiting examples, the at least one lower(er) refractive index coating can include a lower portion disposed between the first layer surface and the at least one EM radiation-modifying layer and an upper portion disposed on the at least one EM radiation-modifying layer, hi some non-limiting examples, the lower portion can include a first lower(er) refractive index coating and the upper portion can include a second lower(er) refractive index coating.

[0023] In some non-limiting examples, the device may include a higher refractive index medium disposed at a refractive index interface with an exposed layer surface of the plurality of lower refractive index coatings such that an EM radiation modifying layer is disposed between the refractive index interface and the first layer surface. In some non-limiting examples, the higher refractive index medium may include an organic compound. In some non-limiting examples, the higher refractive index medium may include a capping layer of the device. In some non-limiting examples, the device may include an air gap disposed beyond the higher refractive index medium. In some non-limiting examples, the higher refractive index medium may include a higher refractive index layer deposited on the refractive index interface. In some non-limiting examples, the higher refractive index medium may be substantially transparent. In some non-limiting examples, the higher refractive index medium may include lithium fluoride (LiF).

[0024] In some non-limiting examples, the extinction coefficient of the higher refractive index medium can be at least one of about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, and about 0.01 or less over at least a portion of the visible range of the EM spectrum.

[0025] In some non-limiting examples, the EM radiation-modifying layer can include a discontinuous layer of at least one particle cluster.

[0026] In some non-limiting examples, the first(er) lower refractive index coating can be composed of a first lower refractive index material, and the second(er) lower refractive index coating can be composed of a second lower refractive index material. In some non-limiting examples, the first and second lower refractive index materials can be the same. In some non-limiting examples, at least one of the first(er) lower refractive index coating and the first lower refractive index material, and at least one of the second(er) lower refractive index coating and the second lower refractive index material can have at least one of the following refractive indices: about 1.7 or less, about 1.6, about 1.5 or less, about 1.45 or less, about 1.4 or less, about 1.35 or less, about 1.3 or less, and about 1.25 or less. In some non-limiting examples, at least one of the first(er) lower refractive index coating and first lower refractive index material, and at least one of the second(er) lower refractive index coating and second lower refractive index material, can have at least one of the following refractive indices: about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to about 1.45, and about 1.25 to 1.4. In some non-limiting examples, at least one of the first(er) lower refractive index coating and first lower refractive index material, and at least one of the second(er) lower refractive index coating and second lower refractive index material, has at least one of the following extinction coefficients in the visible wavelength range of the EM spectrum: about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, and about 0.01 or less.

[0027] In some non-limiting examples, at least one of the plurality of lower refractive index coatings can be substantially transparent. In some non-limiting examples, the average layer thickness of at least one of the plurality of lower refractive index coatings can be at least one or more of about 60 nm or less, about 50 nm or less, about 40 nm or less, about 30 nm or less, about 20 nm or less, about 10 nm or less, about 8 nm or less, and about 5 nm or less.

[0028] In some non-limiting examples, the absorption capability can be at least one of increasing absorption, decreasing absorption, upward shifting a wavelength range, downward shifting a wavelength range, and any combination thereof, of the absorption spectrum of EM radiation passing through the device.

[0029] In some non-limiting examples, the portion of the EM spectrum may correspond to at least one of the visible range, the infrared (IR) range, the near-infrared (NIR) range, the ultraviolet (UV) range, the UV-A range, the UV-B range, any subranges thereof, and any combination of any of these of the EM spectrum.

[0030] In some non-limiting examples, the deposition material can be a metal. In some non-limiting examples, the deposition material can include at least one of copper, silver, and ytterbium. In some non-limiting examples, the deposition material can be co-deposited with a co-deposited dielectric material.

[0031] In some non-limiting examples, the at least one particle structure can have a unique characteristic selected from at least one of size, size distribution, shape, surface coverage, configuration, deposition density, and composition. In some non-limiting examples, the at least one particle structure can have a coverage of at least one of about 10-50%, about 10-45%, about 12-40%, about 15-40%, about 15-35%, about 18-35%, about 20-35%, and about 20-30%. In some non-limiting examples, a majority of the at least one particle structure can have a maximum feature size of at most one of about 40 nm, about 35 nm, about 30 nm, about 25 nm, and about 20 nm. In some non-limiting examples, the at least one particle structure can have a feature size that is at least one of a mean and a median of at least one of about 5-40 nm, about 5-30 nm, about 8-30 nm, about 10-30 nm, about 8-25 nm, about 10-25 nm, about 8-20 nm, about 10-20 nm, about 10-15 nm, and about 8-15 nm.

[0032] In some non-limiting examples, the at least one grain structure can include a seed around which the deposited material tends to coalesce.

[0033] In some non-limiting examples, the device may further include a patterned coating disposed on the second layer surface, wherein the first layer surface is an exposed layer surface of the patterned coating, and wherein an initial sticking probability against deposition of a deposition material on the surface of the patterned coating is substantially less than at least one of 0.3 and the initial sticking probability against deposition of a deposition material on the second layer surface, such that the patterned coating is substantially devoid of a closed coating of the deposition material. In some non-limiting examples, the patterned coating may include at least one patterning material. In some non-limiting examples, the patterned coating may include a first patterning material having an initial sticking probability against deposition of a deposition material and a second patterning material having a second initial sticking probability against deposition of a deposition material, wherein the first initial sticking probability is substantially less than the second initial sticking probability. In some non-limiting examples, the first patterning material can be a nucleation inhibiting coating (NIC) material, and the second patterning material can be selected from at least one of an electron transport layer (ETL) material, Liq, and lithium fluoride (LiF).

[0034] In some non-limiting examples, the layer comprises at least one Lateral direction and a second portion of the device, wherein at least one EM radiation-modifying layer may extend across the first portion, and the device is adapted to pass at least one EM signal through the first portion at a non-zero angle relative to the layer.

[0035] In some non-limiting examples, the at least one EM signal can have a wavelength range in at least a portion of at least one of the IR spectrum and the NIR spectrum.

[0036] In some non-limiting examples, the first portion can be substantially devoid of a occlusive coat of deposited material. In some non-limiting examples, the first portion can correspond to at least a portion of a signal transparent region.

[0037] In some non-limiting examples, the device may be adapted to accept at least one EM signal through the device for exchange with at least one under-display component. In some non-limiting examples, the at least one under-display component may include at least one of a receiver adapted to receive and an emitter adapted to emit the at least one EM signal through the device. In some non-limiting examples, the receiver may be an IR detector and the transmitter may be an IR emitter. In some non-limiting examples, the transmitter may emit a first EM signal and the receiver may detect a second EM signal that is a reflection of the first EM signal. In some non-limiting examples, the exchange of the first and second EM signals may provide biometric authentication of the user. In some non-limiting examples, the device may form a display panel of a user device that together surrounds the under-display component.

[0038] In some non-limiting examples, the second portion can include at least one emitting region for emitting at least one EM signal at a non-zero angle relative to the layer.

[0039] In some non-limiting examples, the device may further include at least one semiconductor layer disposed on top of the layer, each emitting region including a first electrode and a second electrode, the first electrode being disposed between the substrate and the at least one half layer, and the at least one semiconductor layer being disposed between the first electrode and the second electrode.

[0040] In some non-limiting examples, the device can further include at least one closure coat of a deposition material disposed on the exposed layer surface of the second portion. In some non-limiting examples, the second electrode can include at least one closure coat of a deposition material. DETAILED DESCRIPTION OF THE INVENTION

[0041] Layered Devices The present disclosure relates generally to layered semiconductor devices, and more particularly to optoelectronic devices. Optoelectronic devices can generally encompass any device that converts electrical signals into photons or vice versa. In some non-limiting examples, layered semiconductor devices, including but not limited to optoelectronic devices, can serve as surfaces, including but not limited to display panels, of user devices.

[0042] Those skilled in the relevant art will understand that while the present disclosure is directed to optoelectronic devices, the principles may be applicable to any panel having multiple layers, including at least one layer of conductive deposited material 1631 (FIG. 16), including but not limited to a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, in whole or in part, at a non-zero angle relative to the plane of at least one of the layers.

[0043] 1, there can be seen a cross-sectional view of an exemplary layered device 100. In some non-limiting examples, as shown in more detail in FIG. 19, device 100 can include multiple layers deposited on a substrate 10.

[0044] A lateral axis, identified as the X-axis, may be shown along with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may be shown as being substantially transverse to the longitudinal axis of the device 100. Lateral direction The longitudinal axis may define the lateral sides of the device 100.

[0045] The layers of device 100 are oriented substantially parallel to the plane defined by the lateral axis. Lateral direction1 may be abstracted for illustrative purposes in some non-limiting examples. In some non-limiting examples, there may be localized substantially planar layers of different thicknesses and dimensions across the lateral extent of device 100, and in some non-limiting examples, layers may be substantially entirely absent and / or may include layers separated by non-planar transition regions (including lateral gaps and even discontinuities).

[0046] Thus, for illustrative purposes, device 100 may be shown in its cross-sectional plane as a substantially layered structure of substantially parallel planar layers, although such a device may locally illustrate a variety of topographies for defining features, each of which may substantially manifest the layered profile discussed in cross-sectional plane.

[0047] Lower refractive index layer Returning again to FIG. 1, in some non-limiting examples, each of the at least one lower refractive index layer 120 may be part of the layered semiconductor device 100, in some non-limiting examples, Lateral direction may be disposed over at least a portion of the first lower refractive index layer 120 on the exposed layer surface 11 of the underlayer 110. In some non-limiting examples, the first lower refractive index layer 120 a may be disposed on the exposed layer surface 11 of the underlayer 110, and a second(er) refractive index layer 120 b is the first(er) refractive index layer 120 a The adhesive layer may be disposed on the exposed surface of the adhesive layer.

[0048] In some non-limiting examples, the at least one lower(er) refractive index layer 120 can include a medium having a low refractive index (low refractive index material).

[0049] In some non-limiting examples, the first low refractive index material for forming the first of the lower refractive index layers 120 may be the same as or different from the second low refractive index material for forming the second of the lower refractive index layers 120.

[0050] In some non-limiting examples, at least one of the lower refractive index layers 120 and / or the lower refractive index material may exhibit a first refractive index when deposited as a film and / or coated in some form and under similar conditions of deposition of the at least one lower refractive index layer 120 in the device 100, in some non-limiting examples.

[0051] In some non-limiting examples, a first low refractive index material for forming a first of the lower refractive index layers 120 can have a first refractive index that can be the same as or different from a first refractive index of a second low refractive index material for forming a second of the lower refractive index layers 120.

[0052] In some non-limiting examples, the first refractive index can be determined and / or measured at a first wavelength range and / or at least one first wavelength (first wavelength (range)). In some non-limiting examples, such first wavelength range can be at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, or about 300-900 nm.

[0053] In some non-limiting examples, the first maximum refractive index may correspond to a maximum value of the first refractive index measured within such first wavelength (range).

[0054] In some non-limiting examples, the first refractive index can vary by no more than at least one of about 0.4, about 0.3, about 0.2, or 0.1 across such first wavelength (range).

[0055] In some non-limiting examples, the first refractive index can be less than or equal to at least one of about 1.7, about 1.6, about 1.5, about 1.45, about 1.4, about 1.35, about 1.3, or about 1.25 at such first wavelength (range).

[0056] In some non-limiting examples, the first refractive index can be at least one of about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to 1.45, or about 1.25 to 1.4 at such first wavelength (range).

[0057] In some non-limiting examples, at least one of the lower refractive index layers 120 and / or the lower refractive index material, when deposited as a film and / or coated in some form, and under similar conditions of deposition of the at least one lower refractive index layer 120 in the device 100, may exhibit a first extinction coefficient at such first wavelength (range) that is less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, or about 0.01.

[0058] In some non-limiting examples, the at least one lower refractive index layer(s) 120 and / or the low refractive index material may be substantially transparent, in some non-limiting examples, when deposited as a form of film and / or coating and under circumstances similar to the deposition of the at least one lower refractive index layer(s) 120 in the device 100.

[0059] In some non-limiting examples, not shown, when deposited as a film and / or coated in some form, and under circumstances similar to the deposition of at least one lower refractive index layer(s) 120 within device 100, at least one lower refractive index layer(s) 120 and / or low refractive index material may comprise a substantially porous film and / or medium having at least one void formed therein. Without being bound by theory, the presence of such pores and / or voids may contribute to a lower first refractive index of at least one lower refractive index layer(s) 120 compared to a layer composed of a similar medium, but which is substantially devoid of such pores and / or voids. In some non-limiting examples, such substantially porous layers and / or media can be considered to be at least one of: a microporous layer and / or medium, which may contain, by way of non-limiting example, at least one pore and / or void having a diameter of 2 nm or less; a mesoporous layer and / or medium, which may contain, by way of non-limiting example, at least one pore and / or void having a diameter of about 2-50 nm; and a macroporous layer and / or medium, which may contain, by way of non-limiting example, at least one pore and / or void having a diameter of at least about 50 nm.

[0060] In some non-limiting examples, the low refractive index material may include and / or be formed by at least one of an organic compound and an organic-inorganic hybrid material.

[0061] In some non-limiting examples, the average layer thickness of the at least one lower refractive index layer 120 may be less than or equal to at least one of about 60 nm, about 50 nm, about 40 nm, about 30 nm, about 20 nm, about 10 nm, about 8 nm, or about 5 nm.

[0062] Without being bound by any particular theory, it may be hypothesized that reducing the average layer thickness of the at least one lower refractive index layer 120, including but not limited to, to at least one of about 5-20 nm, or 5-15 nm, may, in some non-limiting examples, result in an increased rate of extraction of EM radiation, including but not limited to, by reduced absorption and / or increased transmittance, while mitigating the possibility that the presence of such lower refractive index layer(s) 120 in the device 100 may adversely affect the performance of the device 100 and / or the process for manufacturing it.

[0063] Without being bound by any particular theory, it is presently somewhat surprising that materials that exhibit relatively low surface tensions, particularly materials containing and / or formed by organic materials, can, in some non-limiting examples, exhibit relatively low refractive indices. This can be seen in Table 1, which shows the resulting surface tensions and refractive indices for various exemplary materials.

[0064] [Table 1]

[0065] FIG. 2 is a plot of refractive index as a function of surface tension for the example materials listed in Table 1 above.

[0066] Based on the above, it may be assumed that materials exhibiting a relatively low surface energy may be suitable to act as low refractive index materials. In some non-limiting examples, the at least one low refractive index layer 120 may include a low refractive index material exhibiting a surface energy of about 25 dynes / cm or less and a first refractive index that may be about 1.45 or less.

[0067] In some non-limiting examples, the at least one low refractive index layer 120 can include a low refractive index material exhibiting a surface energy of about 20 dynes / cm or less and a first refractive index of about 1.4 or less.

[0068] The exposed layer surface 11 of the uppermost (last deposited) one of the at least one lower refractive index layers 120 may define a refractive index interface 140. A higher refractive index medium may be disposed on the refractive index interface 140, i.e., on the exposed layer surface 11 of the uppermost one of the at least one lower refractive index layers 120. In some non-limiting examples, the higher refractive index medium may include a physical higher refractive index layer 150, which in some non-limiting examples may be a CPL, a TFE layer, or other encapsulation layer 2650 ( FIG. 26B ), a polarizing layer, or other physical layers and / or coatings that may be deposited on device 100 as part of the manufacturing process.

[0069] In some non-limiting examples, such higher refractive index layer 150 may include lithium fluoride (LiF).

[0070] Although not shown, in some non-limiting examples, the exposed layer surface 11 of the uppermost(er) lower refractive index layer 120 may be provided with an air gap at the refractive index interface 140, whether during or after fabrication and / or during operation.

[0071] In some non-limiting examples, the exposed layer surface 11 of the higher refractive index layer 150 can be disposed adjacent to an air gap. As a non-limiting example, the high refractive index layer 150 can be disposed between an air gap and the uppermost(er) lower refractive index layer 120.

[0072] Thus, in view of the above, in some non-limiting examples, versions of device 100 may show only the layers of interest that are forward of refractive index interface 140, with the understanding that in some non-limiting examples, such refractive index interface 140 may define an interface between device 100 and a further medium, whether in the form of a physical higher refractive index layer 150, an air gap, and / or an air interface.

[0073] In some non-limiting examples, higher refractive index layer 150, when present, can include a material having a high refractive index (high refractive index material). Those skilled in the art will understand that a CPL can typically exhibit a relatively high refractive index of at least one of at least about 1.7, 1.8, or 1.9 to facilitate outcoupling of EM radiation emitted through and / or at least partially transmitted through device 100.

[0074] In some non-limiting examples, the higher refractive index layer 150, if present, and / or the high refractive index material, in some non-limiting examples, when deposited as a form of film and / or coating and under circumstances similar to the deposition of the higher refractive index layer 150 in the device 100, may exhibit a second refractive index.

[0075] In some non-limiting examples, the second refractive index can be determined and / or measured in a second wavelength range and / or at least one second wavelength (second wavelength (range)).

[0076] In some non-limiting examples, such second wavelength range may be at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, or about 300-900 nm.

[0077] In some non-limiting examples, the second maximum refractive index can correspond to the maximum value of the second refractive index measured within such second wavelength (range).

[0078] In some non-limiting examples, the second maximum refractive index can correspond to a wavelength within a second wavelength range that is different from the wavelength within the first wavelength range to which the first maximum refractive index can correspond.

[0079] In some non-limiting examples, the second refractive index can be at least one of about 1.7, about 1.8, or about 1.9.

[0080] The second refractive index at the second wavelength (range) exceeds the first refractive index at the first wavelength (range).

[0081] In the present disclosure, a medium in which the at least one lower refractive index layer(s) 120 may be formed may be considered a low refractive index material, provided that it has a first refractive index that is exceeded by a second refractive index of the material, even though the first refractive index of the medium in which the at least one lower refractive index layer(s) 120 may not necessarily be considered low compared to the refractive index of other materials that may be employed in typical optoelectronic devices.

[0082] In some non-limiting examples, the second wavelength (range) may be the same as and / or different from the first wavelength (range).

[0083] In some non-limiting examples, the second refractive index at the second wavelength (range) may be greater than the first refractive index at the first wavelength (range) by at least one of about 0.3, about 0.4, about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, or about 1.5.

[0084] In some non-limiting examples, the second maximum refractive index may exceed the first maximum refractive index by at least one of about 0.5, about 0.7, about 1.0, about 1.2, about 1.3, about 1.4, about 1.5, or about 1.7.

[0085] In some non-limiting examples, the higher refractive index layer 150 and / or the high refractive index material, when deposited as a form of film and / or coating, and under circumstances similar to the deposition of the higher refractive index layer 150 in the device 100, may exhibit a second extinction coefficient at such second wavelength (range) of less than or equal to at least one of about 0.1, about 0.08, about 0.05, about 0.03, or about 0.01.

[0086] In some non-limiting examples, the higher refractive index layer 150 and / or the high refractive index material may be substantially transparent when deposited as a form of film and / or coating and under circumstances similar to the deposition of the higher refractive index layer 150 within the device 100.

[0087] In some non-limiting examples, the high refractive index material may include and / or be formed by an organic compound.

[0088] In some non-limiting examples, device 100 may be configured to substantially allow EM radiation to engage a surface of device 100 along an optical path in at least a first direction indicated by arrow O-C at a non-zero angle relative to a plane of the underlying layers defined by the multiple lateral axes. The optical path may correspond to a (first) direction that may be at least one of a direction from which EM radiation emitted by device 100 may be extracted (as indicated by the orientation of arrow O-C in the figures) and a direction in which EM radiation is incident on and propagates at least partially through exposed layer surface 11 of device 100, where the EM radiation may be incident on exposed layer surface 11 of substrate 10 opposite the surface on which various layers and / or coatings are deposited and at least partially transmitted through substrate 10 and various layers and / or coatings (not shown).

[0089] Those skilled in the art will understand that there may be scenarios in which EM radiation is emitted by device 100 and, at the same time, EM radiation is incident on and at least partially transmitted through exposed layer surface 11 of device 100. In such scenarios, the direction of the optical path is determined by the direction in which the EM radiation emitted by device 100 may be extracted, unless the context indicates otherwise. In some non-limiting examples, EM radiation that is transmitted entirely through device 100 may propagate in the same or similar direction. Nevertheless, nothing in this disclosure should be construed as limiting the propagation of EM radiation entirely through device 100 to a direction that is the same as or similar to the direction of propagation of EM radiation emitted by device 100.

[0090] In the present disclosure, propagation of EM radiation in a given direction in time may give rise to a directional arrangement in which at least one lower refractive index layer 120 may be said to be "forward," "ahead," and / or "before" a higher refractive index layer 150 (if present) in the optical path (first direction of propagation of EM radiation within), including but not limited to, as indicated by arrow OC.

[0091] In some non-limiting examples, device 100 may be a top-emitting optoelectronic device in which EM radiation (including, but not limited to, in the form of light and / or photons) is emitted by device 100 in at least a first direction.

[0092] Although not shown, in some non-limiting examples, device 100 may include at least one optically transparent region through which EM radiation incident on exposed layer surface 11 of substrate 10 upon which various layers and / or coatings are deposited may be transmitted through substrate 10 and the various layers and / or coatings in at least a first direction, which in such a scenario is opposite to the direction indicated by arrow OC in the figure.

[0093] Those skilled in the art will appreciate that it may be well known to use CPLs alone to enhance the outcoupling of light emitted by optoelectronic devices so as to improve the external quantum efficiency (EQE).

[0094] Those skilled in the art will appreciate that the inclusion of at least one lower(er) refractive index layer 120 before the higher refractive index medium in the optical path may, in some non-limiting examples, create a refractive index interface 140 between the uppermost one of such lower(er) refractive index layers 120 and the higher refractive index medium that may reflect EM radiation therefrom toward the underlying layer 110, thereby reasonably expected to reduce the fraction of EM radiation that may be extracted from such a device 100.

[0095] However, somewhat surprisingly, placing a low(er) refractive index layer 120 having a first refractive index that may be lower than the second refractive index of the higher refractive index medium in the optical path, before the higher refractive index medium, between the base layer and the higher refractive index medium, may, in some non-limiting examples, demonstrate enhanced outcoupling of EM radiation compared to a comparable device that may lack a low(er) refractive index layer 120 that may be between the base layer 110 and the higher refractive index medium, and thus, at least in some non-limiting examples, may increase the proportion of EM radiation that can be extracted from the device 100.

[0096] In some non-limiting examples, the average layer thickness of the at least one lower refractive index layer 120 can be less than or equal to the average layer thickness of the higher refractive index medium.

[0097] In some non-limiting examples, the underlayer 110 can include a medium having a high refractive index (high refractive index underlayer material), such that the underlayer 110 can include a higher refractive index underlayer 110.

[0098] In some non-limiting examples, the higher refractive index underlayer 110 and / or the high refractive index underlayer material may exhibit a third refractive index when deposited as a form of film and / or coating and under circumstances similar to the deposition of the higher refractive index underlayer 110 in device 100.

[0099] In some non-limiting examples, the third refractive index can be determined and / or measured in a third wavelength range and / or at least one third wavelength (third wavelength (range)).

[0100] In some non-limiting examples, such a third wavelength range may be at least one of about 315-400 nm, about 450-460 nm, about 510-540 nm, about 600-640 nm, about 456-624 nm, about 425-725 nm, about 350-450 nm, about 300-450 nm, about 300-550 nm, about 300-700 nm, about 380-740 nm, about 750-900 nm, about 380-900 nm, or about 300-900 nm.

[0101] In some non-limiting examples, the third maximum refractive index can correspond to the maximum value of the third refractive index measured within such third wavelength (range).

[0102] In some non-limiting examples, the first maximum refractive index may correspond to a wavelength within the first wavelength range that is different from the wavelength within the third wavelength range to which the third maximum refractive index corresponds.

[0103] In some non-limiting examples, the third refractive index may be at least one of about 1.7, about 1.8, or about 1.9.

[0104] In some non-limiting examples, the third refractive index at the third wavelength (range) can be greater than the first refractive index at the first wavelength (range), so that in some non-limiting examples, the lower refractive index layer 120 can be between two layers comprising higher refractive index materials, i.e., the higher refractive index underlayer 110 and the higher refractive index medium.

[0105] As a non-limiting example, the underlayer 110 can include one of at least one semiconductor layer 1930 ( FIG. 19 ) of an organic stack of an optoelectronic device, including, but not limited to, an organic light emitting diode (OLED). In some non-limiting examples, the underlayer 110 can include one of the top semiconductor layers 1930, including, but not limited to, an electron transport layer (ETL) 1937 ( FIG. 19 ) and / or an electron injection layer (EIL) 1939 ( FIG. 19 ). Typically, the ETL 1937 and / or EIL 1939 materials tend to have a relatively high refractive index.

[0106] Without being bound by any particular theory, it may be hypothesized that disposing a thin low(er) index layer 120 comprising a low index material having a first index lower than the (second) index of the higher index layer 150 and / or the third index of the underlayer 110 may increase the transmission of EM radiation through the device 100 compared to a device in which such low(er) index layer 120 is not present.

[0107] EM radiation correction A nanoparticle (NP) is understood to be a particle structure 131 of a substance whose primary characteristic size is on the nanometer (nm) scale, generally about 1-300 nm. At the nm scale, NPs of a given material can have properties (including, but not limited to, optical, chemical, physical, and / or electrical properties) that are unique to the same material in bulk form.

[0108] These properties can be utilized to improve the performance of multiple NPs when formed in layers of layered semiconductor devices, including but not limited to optoelectronic devices.

[0109] Current mechanisms for introducing such layers of NPs into devices have several drawbacks.

[0110] First, such NPs are typically formed in close-packed layers in such devices and / or dispersed within a matrix material. As a result, the thickness of such NP layers can typically be much greater than the characteristic size of the NPs themselves. The thickness of such NP layers can impart undesirable characteristics with respect to device performance, device stability, device reliability, and / or device lifetime, thereby reducing or even eliminating any perceived benefits provided by the unique properties of the NPs.

[0111] Second, in such devices, and the techniques for synthesizing NPs for use in such devices, large amounts of carbon (C), oxygen (O), and / or sulfur (S) may be introduced by various mechanisms.

[0112] As a non-limiting example, wet chemical methods may be used to introduce NPs into devices, typically with precisely controlled characteristic sizes, size distributions, shapes, surface coverages, configurations, and / or deposition densities. However, such methods typically use organic capping groups to stabilize the NPs (e.g., synthesis of citrate-capped silver (Ag) NPs), which introduce C, O, and / or S into the synthesized NPs.

[0113] Furthermore, NP layers deposited from solution may typically contain C, O, and / or S due to the solvent used during deposition.

[0114] Additionally, these elements may be introduced as contaminants during the wet chemical process and / or deposition of the NP layer.

[0115] However, once introduced, the presence of large amounts of C, O, and / or S in the NP layer of such devices may degrade the performance, stability, reliability, and / or lifetime of such devices.

[0116] Third, when NP layers are deposited from solution, as the solvent used dries, the NP layers tend to have non-uniform properties across the NP layer and / or between different patterned regions of such a layer. In some non-limiting examples, the edges of a given NP layer may be significantly thicker or thinner than the interior regions of such a layer, and this imbalance may adversely affect device performance, stability, reliability, and / or lifetime.

[0117] Fourth, in addition to wet chemical synthesis and solution deposition processes, other methods and / or processes exist for synthesizing and / or depositing NPs, including, but not limited to, vacuum-based processes (e.g., but not limited to, PVD). However, existing methods tend to provide insufficient control over the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersity of the NPs deposited thereby. As a non-limiting example, in conventional PVD processes, NPs tend to form close-packed films as their size increases. As a result, methods such as conventional PVD methods are generally not well suited to forming NP layers of large, dispersed NPs with low surface coverage. Rather, the poor control over the characteristic size, size distribution, shape, surface coverage, composition, and / or deposition density imparted by such conventional methods may result in poor device performance, stability, reliability, and / or lifetime.

[0118] EM radiation-absorbing coatings utilize plasmonics, a branch of nanophotonics that studies the resonant interaction of EM radiation with metals. Those skilled in the art will appreciate that metal NPs can exhibit LSP excitations and / or coherent oscillations of free electrons, whose optical response can be tuned by varying the characteristic size, size distribution, shape, surface coverage, configuration, deposition density, and / or composition of the nanostructures. Such optical response, for EM radiation-modifying coatings, can include absorption of EM radiation incident thereon, thereby reducing its reflection and / or shifting it to lower or higher wavelengths (sub-ranges) of the EM spectrum, including but not limited to the visible spectrum and / or sub-ranges thereof.

[0119] It has also been reported that placing certain metal NPs near a medium with a relatively low refractive index can shift the absorption spectrum of such NPs to lower wavelength (sub)ranges (blue shift).

[0120] Therefore, further, in some non-limiting examples, it may be assumed that disposing the particulate material 135 as a discontinuous layer 160 of at least one particle structure 131 on the exposed layer surface 11 of the underlying at least one lower refractive index coating 120 such that the at least one particle structure 131 is in physical contact with the underlying at least one lower refractive index coating 120 may advantageously shift the absorption spectrum of the particulate material 135, including but not limited to, a blue shift, so that it does not substantially overlap with the wavelength range of the EM spectrum of EM radiation emitted by and / or at least partially transmitted through the device 100.

[0121] In some non-limiting examples, the peak absorption wavelength of the at least one particle structure 131 can be less than or equal to the peak wavelength of the EM radiation being emitted through and / or at least partially transmitted through the device 100. By way of non-limiting example, the particle material 135 can exhibit peak absorption at at least one of wavelengths of about 470 nm or less, about 460 nm or less, about 455 nm or less, about 450 nm or less, about 445 nm or less, about 440 nm or less, about 430 nm or less, about 420 nm or less, or about 400 nm or less.

[0122] Somewhat surprisingly, it has been found that providing a particulate material 135, including but not limited to, in the form of at least one particle structure 131, including but not limited to, comprised of a metal within and / or adjacent to at least one lower refractive index coating 120, can further affect the absorption and / or transmission of EM radiation passing in a first direction through device 100 from and / or through at least one lower refractive index layer(s) 120, at least one particle structure 131, and of at least one wavelength (sub)range of the EM spectrum, including but not limited to, the visible spectrum and / or subranges thereof across refractive index interface 140.

[0123] In some non-limiting examples, absorption can be reduced and / or transmission can be concentrated in at least a range of the EM spectrum, including but not limited to the visible spectrum and / or subranges thereof.

[0124] In some non-limiting examples, the absorption can be centered in an absorption spectrum that is in the range of the EM spectrum, including but not limited to the visible spectrum and / or subranges thereof.

[0125] In some non-limiting examples, the absorption spectrum can be blue-shifted and / or shifted (red-shifted) to higher wavelength (sub) ranges including but not limited to the visible spectrum, and / or wavelength (sub) ranges of the EM spectrum, including but not limited to, wavelength (sub) ranges of the EM spectrum, and / or at least partially beyond the visible spectrum.

[0126] Thus, as shown in FIG. 1 , in some non-limiting examples, the layered semiconductor device 100 may have an EM radiation modifying (NP) layer 130 disposed on and / or above the exposed layer surface 11 of one of the at least one lower(er) refractive index layers 120 other than the topmost one of the lower(er) refractive index layers 120 to reduce reflection of EM radiation incident on the device 100 or concomitantly absorb EM radiation incident thereon, modify the spectrum of EM radiation emitted by the device 100, and / or modify the spectrum of EM radiation transmitted through the device 100.

[0127] In some non-limiting examples, the EM radiation modifying layer 130 may be substantially parallel to the refractive index interface 140 and may be substantially parallel to at least one lower refractive index layer 120. a The EM radiation-modifying layer 130 may be between the first (lowest or first deposited) layer of the at least one lower refractive index layer 120 and the refractive index interface 140. In some non-limiting examples, the EM radiation-modifying layer 130 may correspond to the exposed layer surface 11 of the underlying (earlier deposited) one of the at least one lower refractive index layer 120 at the interface between two of the at least one lower refractive index layer 120.

[0128] In some non-limiting examples, the EM radiation modifying layer 130 may be formed by at least one lower refractive index layer 120. a , and may therefore be spaced apart from the exposed layer surface 11 of the underlying layer 110. In some non-limiting examples, thereafter, at least one lower refractive index layer 120 ba second one of which may cover at least one grain structure 131 by which an EM radiation modifying layer 130 may be configured, thereby forming a first lower refractive index layer 120 a and a second(er) refractive index layer 120 b surrounds the EM radiation modifying layer 130 and its at least one grain structure 131, and the EM radiation modifying layer 130 is within the at least one lower refractive index layer(s) 120 and is therefore spaced apart from the uppermost one of the at least one lower refractive index layers 120, in other words, the exposed layer surface 11 of the refractive index layer 150.

[0129] Those skilled in the art will appreciate that, in some non-limiting examples, multiple EM radiation-modifying layers 120 may be formed in various configurations, whether or not separated by additional layers. Lateral direction It will be appreciated that the various layers may have different absorption spectra and be disposed on top of one another. In this manner, the absorption of a particular region of the device may be tailored according to one or more desired absorption spectra.

[0130] First(lower) refractive index layer 120 a and a second(er) refractive index layer 120 b A series of samples were prepared to evaluate the compatibility of the EM radiation-modifying layer 130 interposed between the

[0131] In each sample, a first lower refractive index material was deposited onto a glass substrate to an average layer thickness of 20 nm to form a first(er) refractive index layer 120 a The first low refractive index material has an initial sticking probability against Ag deposition that is lower than the initial sticking probability of glass against Ag deposition.

[0132] Then, a lower refractive index layer 120 a The exposed layer surface 11 of was exposed to a vapor flux of Ag until a nominal layer thickness of 20 nm was reached.

[0133] Thereafter, a second low refractive index material, substantially identical to the first low refractive index material, is deposited to different average layer thicknesses on the exposed layer surface 11 of each sample to form a second(er) low refractive index 120 b Reference sample 1 was formed by not depositing the second lower refractive index material, so that reference sample 1 does not have the second(er) refractive index layer 120. b Sample 1A was formed by depositing the second low refractive index material to an average layer thickness of 5 nm. Sample 1B was formed by depositing the second low refractive index material to an average layer thickness of 10 nm. Sample 1C was formed by depositing the second low refractive index material to an average layer thickness of 15 nm.

[0134] Table 2 below shows the transmittance values ​​(expressed as a percentage of the intensity of light emitted by the light source) measured for various samples at various wavelengths. In each of the experiments performed to obtain these values, EM radiation of known intensity was transmitted through the sample from the glass substrate side, and the intensity of the EM radiation exiting the other side of the sample was measured at various wavelengths.

[0135] [Table 2]

[0136] As can be seen, each of the samples in Table 2 exhibits a relatively small decrease in transmittance across the IR spectrum (700 nm) and even in the R (red) / G (green) region of the visible spectrum (550 nm). In contrast, as the average layer thickness of the second, lower refractive index material increases, an increase in absorption (decrease in transmittance) is exhibited in the visible spectrum, particularly towards the B (blue) region of the visible spectrum (450 nm), and even in the UV (400 nm).

[0137] First(lower) refractive index layer 120 a and a second(er) refractive index layer 120 bA series of samples were prepared to evaluate the compatibility of the EM radiation-modifying layer 130 interposed between the

[0138] In each sample, a first lower refractive index material was deposited onto a glass substrate to an average layer thickness of 20 nm to form a first(er) refractive index layer 120 a The first low refractive index material used was the same as the first low refractive index material used in Reference Sample 1 and Samples 1A, 1B, and 1C, and the first low refractive index material used had an initial sticking probability against Ag deposition that was lower than the initial sticking probability of glass against Ag deposition.

[0139] Then, a lower refractive index layer 120 a The exposed layer surface 11 of was exposed to a vapor flux of ytterbium (Yb) until a nominal layer thickness of 2 nm was reached.

[0140] The exposed layer surface was then exposed to a vapor flux of Ag until a nominal layer thickness of 15 nm was reached.

[0141] Thereafter, different average layer thicknesses of a second low refractive index material, which is substantially identical to the first low refractive index material used herein, are deposited on the exposed layer surface 11 of each sample to different average layer thicknesses to form a second(er) low refractive index 120 b Reference sample 2 was formed by not depositing the second lower refractive index material, so that reference sample 2 does not have the second(er) refractive index layer 120. b Sample 2A was formed by depositing the second, lower refractive index material to an average layer thickness of 25 nm. Sample 2B was formed by depositing the second, lower refractive index material to an average layer thickness of 40 nm.

[0142] In contrast, Sample 2C has a second lower refractive index layer 120 b The second low refractive index material is not deposited, but a high refractive index material is deposited instead, so that the first(er) refractive index layer 120 is substantially devoid of a1B is formed by forming a higher refractive index layer 150 at the refractive index interface 140 with the exposed layer surface 11 of the silicon nitride film.

[0143] Table 3 below shows the transmittance values ​​(expressed as a percentage of the intensity of the EM radiation emitted by the EM radiation source) measured for various samples at various wavelengths. In each of the experiments performed to obtain these values, EM radiation in the form of light of known intensity was transmitted through the sample from the glass substrate side, and the intensity of the EM radiation exiting the other side of the sample was measured.

[0144] [Table 3]

[0145] As can be seen, the measured transmittance values ​​in Table 2 are generally reduced relative to the corresponding values ​​in Table 3. As between Reference Sample 2 and Sample 2A, the increase in absorption (decrease in transmittance) in the IR spectrum (700 nm), visible spectrum (450 nm, 550 nm), and UV (400 nm) due to the introduction of the second low refractive index material is relatively small. However, as the average layer thickness of the second low refractive index material increases (as between Samples 2A and 2B), a decrease in light absorption can be detected. In contrast, replacing the second low refractive index material with a higher refractive index material results in a substantial increase in absorption in both the IR spectrum (700 nm) and the R (red) / G (green) regions of the visible spectrum. In the B (blue) region of the visible spectrum (450 nm), Sample 2C demonstrates a similar level of transmittance to that of Reference Sample 2 and Sample 2B, while a substantial increase in transmittance is detected in the UV (400 nm) compared to that of Reference Sample 2, Sample 2A, and Sample 2B.

[0146] A series of samples were fabricated to evaluate the compatibility of the refractive index interface 140 between at least one lower(er) refractive index layer 120 and a higher refractive index layer 150 .

[0147] In each sample, a first lower refractive index material was deposited onto a glass substrate to an average layer thickness of 20 nm to form a first(er) refractive index layer 120 a The first low refractive index material used was substantially the same as the first low refractive index material used in Reference Sample 1, and Samples 1A, 1B, and 1C.

[0148] A second low refractive index material of a different average layer thickness, substantially identical to the first low refractive index material, is then applied to the lower(er) refractive index layer 120 of each sample. a a second lower refractive index layer 120 b Reference sample 3 was formed by not depositing the second lower refractive index material, so that reference sample 3 does not have the second(er) refractive index layer 120. b Sample 3A was formed by depositing the second low refractive index material to an average layer thickness of 5 nm. Sample 3B was formed by depositing the second low refractive index material to an average layer thickness of 10 nm. Sample 3C was formed by depositing the second low refractive index material to an average layer thickness of 15 nm.

[0149] A high refractive index material was then deposited on the exposed layer surface 11 of each sample to an average thickness of 40 nm to form a higher refractive index layer 150. The high refractive index material used was substantially the same as the high refractive index material used in sample 2C.

[0150] Table 4 below shows the transmittance values ​​(expressed as a percentage of the intensity of the EM radiation emitted by the EM radiation source) measured for various samples at various wavelengths. In each of the experiments performed to obtain these values, EM radiation in the form of light of known intensity was transmitted through the sample from the glass substrate side, and the intensity of the EM radiation exiting the other side of the sample was measured.

[0151] [Table 4]

[0152] As can be seen, there is a slight increase in transmittance across the IR spectrum (700 nm) and in the R / G region of the visible spectrum (550 nm) as the average layer thickness of the second, lower refractive index material increases. There is a very slight decrease in transmittance towards the B region of the visible spectrum (450 nm) and in the UV (400 nm) as the average layer thickness of the second, lower refractive index material increases.

[0153] First(lower) refractive index layer 120 a and a second(er) refractive index layer 120 b A series of samples were fabricated to evaluate the compatibility of both the EM radiation modifying layer 130 interposed between the at least one lower refractive index layer 120 and the higher refractive index layer 150 and the refractive index interface 140.

[0154] In each sample, a first lower refractive index material was deposited onto a glass substrate to an average layer thickness of 20 nm to form a first(er) refractive index layer 120 a The first low refractive index material used was substantially the same as the first low refractive index material used in Reference Samples 1 and 3, and Samples 1A, 1B, 1C, 3A, 3B, and 3C.

[0155] Then, a lower refractive index layer 120 a The exposed layer surface 11 of was exposed to a vapor flux of Ag until a nominal layer thickness of 20 nm was reached.

[0156] Thereafter, a second low refractive index material, substantially identical to the first low refractive index material, is deposited to different average layer thicknesses on the exposed layer surface 11 of each sample to form a second(er) low refractive index 120 b Reference sample 4 was formed by not depositing the second lower refractive index material, so that reference sample 4 does not have the second(er) refractive index layer 120. bSample 4A was formed by depositing the second low refractive index material to an average layer thickness of 5 nm. Sample 4B was formed by depositing the second low refractive index material to an average layer thickness of 10 nm. Sample 4C was formed by depositing the second low refractive index material to an average layer thickness of 15 nm.

[0157] A high refractive index material was then deposited on the exposed layer surface 11 of each sample to an average thickness of 40 nm to form a higher refractive index layer 150. The higher refractive index material used was substantially the same as the high refractive index material used in Reference Sample 3, and Samples 3A, 3B, and 3C.

[0158] Table 5 below shows the transmittance values ​​(expressed as a percentage of the intensity of the EM radiation emitted by the EM radiation source) measured for various samples at various wavelengths. In each of the experiments performed to obtain these values, EM radiation in the form of light of known intensity was transmitted through the sample from the glass substrate side, and the intensity of the EM radiation exiting the other side of the sample was measured.

[0159] [Table 5]

[0160] As can be seen, there is a slight increase in transmittance across the IR spectrum (700 nm) and at various wavelengths in the visible spectrum (450 nm, 550 nm) as the average layer thickness of the second, lower refractive index material increases. In contrast, in the UV (400 nm), there is a slight decrease in transmittance as the average layer thickness of the second, lower refractive index material increases.

[0161] It was further observed that Samples 4A, 4B, and 4C exhibited substantially higher transmittance across the visible spectrum compared to Reference Sample 4. As a non-limiting example, as between Reference Sample 4 and Sample 4A, where the only difference in sample preparation was the presence of a 5 nm thick layer of a second, low refractive index material in Sample 4A, the presence of such a layer resulted in a substantial increase in transmittance of over 10% at wavelengths of 450 nm and 550 nm. Furthermore, the presence of the second, low refractive index material did not substantially affect transmittance at wavelengths corresponding to the UV spectrum (400 nm) and the IR spectrum (700 nm). Thus, somewhat surprisingly, it has been found that, in at least some non-limiting examples, providing a low refractive index material between the EM radiation-modifying layer and the higher refractive index layer can enhance the transmission of EM radiation across at least a portion of the visible spectrum compared to devices in which such a low refractive index material is not provided between the EM radiation-modifying layer and the higher refractive index layer.

[0162] In the above sample, the first low refractive index material and the second low refractive index material had refractive indices of about 1.36 at wavelengths of about 460 nm, 500 nm, and 550 nm, and the high refractive index material had refractive indices of about 1.89 at wavelengths of about 460 nm, about 1.86 at wavelengths of about 500 nm, and about 1.83 at wavelengths of about 550 nm.

[0163] 3 is a simplified, partial cutaway view in a plan view of device 100. Some portions of device 100 have been omitted from FIG. 3 for ease of illustration, although it will be understood that various features described with respect thereto may be combined with features of the non-limiting examples provided therein.

[0164] The figures may show a pair of lateral axes, identified as the X-axis and the Y-axis, respectively, which may, in some non-limiting examples, be substantially transverse to one another. At least one of these lateral axes may be a lateral axis of the device 100. Lateral direction can be defined.

[0165] 3 , the higher refractive index medium is embodied by a physical higher refractive index layer 150 that extends substantially across at least one particle cluster 131 of EM radiation-modifying layer 120. To the extent that any portion of the exposed layer surface of at least one lower(er) refractive index layer 120 upon which EM radiation-modifying layer 130 is disposed is substantially devoid of particle material 135, including, by way of non-limiting example, the gaps between at least one particle structure 131, a higher refractive index medium, including but not limited to any physical higher refractive index layer 150, may extend substantially across and be disposed upon the exposed layer surface 11 of such lower(er) refractive index layer 120.

[0166] While the EM radiation-modifying layer 130 can absorb EM radiation incident thereon beyond the layered semiconductor device 100, thus reducing reflection, those skilled in the relevant art will understand that in some non-limiting examples, the EM radiation-modifying layer 130 can absorb EM radiation emitted by the device 100 and incident thereon.

[0167] In some non-limiting examples, employing an EM radiation-modifying layer 130 as part of the layered semiconductor device 100 may reduce reliance on polarizers therein.

[0168] In some non-limiting examples, the EM radiation-modifying layer 130 may be formed by depositing a discontinuous layer 160, as shown as a non-limiting example in FIG. 1 , or a discrete metal particle structure 131 including an intermediate stage layer (not shown), which may include NPs of given characteristic dimensions, which may be, in some non-limiting examples, a characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, and / or composition thereof.

[0169] In some non-limiting examples, at least one dimension, including but not limited to a characteristic dimension, of at least one grain structure 131 along the EM radiation modifying layer 130 may correspond to a wavelength range in which the absorption spectrum of the at least one grain structure 131 does not substantially overlap with a wavelength range of the EM spectrum of EM radiation emitted by and / or at least partially transmitted through the device 100.

[0170] Those skilled in the art will understand that, given the mechanism by which the material is deposited, due to possible stacking and / or clustering of monomers and / or atoms, the actual size, height, weight, thickness, shape, profile, and / or spacing of grain structures 131 in EM radiation-modifying layer 130 may, in some non-limiting examples, be substantially non-uniform. Additionally, while grain structures 131 in EM radiation-modifying layer 130 are illustrated as having a given profile, this is intended for illustration purposes only and does not dictate the size, height, weight, thickness, shape, profile, and / or spacing of such grain structures 131.

[0171] In some non-limiting examples, the at least one particle structure 131 can have a characteristic dimension of about 200 nm or less. In some non-limiting examples, the at least one particle structure 131 can have a characteristic diameter that can be at least one of about 1-200 nm, about 1-160 nm, about 1-100 nm, about 1-50 nm, or about 1-30 nm.

[0172] In some non-limiting examples, the grain structures 131 making up the EM radiation-modifying layer 130 can be and / or can include discrete metal plasmonic islands or clusters.

[0173] In some non-limiting examples, such grain structure 131 can be formed by depositing a small amount, having an average layer thickness that can be on the order of a fraction of a few angstroms, of deposited material 1631 on an exposed layer surface 11 of an underlying layer, including, but not limited to, first layer 110. In some non-limiting examples, exposed layer surface 11 can be a nucleation-promoting coating (NPC) 1820 ( FIG. 18C ).

[0174] In some non-limiting examples, the particulate material 135 can include at least one of Ag, Yb, and / or magnesium (Mg).

[0175] seed In some non-limiting examples, the size, height, weight, thickness, shape, profile, and / or spacing of grain structures 131 in EM radiation-modifying layer 130 may be specified, to a greater or lesser extent, by depositing seed material in the template layer at appropriate locations and / or at appropriate densities and / or deposition stages as part of EM radiation-modifying layer 130. In some non-limiting examples, such seed material may act as seeds 132 or inhomogeneities and nucleation sites such that deposited material 1631 tends to coalesce around each seed 132 to form grain structures 131.

[0176] In some non-limiting examples, the seed material may include a metal, including but not limited to, Yb or Ag. In some non-limiting examples, the seed material may have high wetting properties with respect to the deposition material 1631 that is deposited and coalesces thereon.

[0177] In some non-limiting examples, the seeds 132 may be deposited in the template layer over the exposed layer surface 11 of the device 100 using, in some non-limiting examples, an open-mask and / or mask-free deposition process of the seed material.

[0178] EM layer patterning coating Referring now to FIG. 4 , a version 400 of device 100 is shown having additional optional layers, in some non-limiting examples, one of at least one lower refractive index layer 120 having an EM radiation modifying layer 130 deposited on exposed layer surface 11, such as an EM layer patterned coating 420. e and the exposed layer surface 11 of a shadow mask 1515 (FIG. 15), which may be, in a non-limiting example, a fine metal mask (FMM), to deposit an EM layer patterned coating 420 for the purpose of depositing an EM radiation modifying layer 130. e It can function as.

[0179] EM layer patterning coating 420 e After selective deposition of the EM layer patterned coating 420, some non-limiting examples include, but are not limited to, e Deposition material 1631 may be deposited on device 400 using an open mask and / or mask-free deposition process to coalesce around each seed 132, if present, that is not covered by the EM radiation modifying layer 130, to form and / or form grain structures 131 that include the EM radiation modifying layer 130 therein.

[0180] EM layer patterning coating 420 e may provide a surface that has a relatively low initial adhesion probability against deposition of the deposition material 1631, which may be substantially less than the initial adhesion probability against deposition of the deposition material 1631 on the exposed layer surface 11 of the underlying layer of the device 400.

[0181] Thus, the exposed layer surface 11 of the underlayer includes, but is not limited to, the EM layer patterned coating 420 e By coalescing around the uncovered seeds 132 with the deposition material 1631, the grain structure 131 may be substantially devoid of a closure coat 1240 (FIG. 12) of deposition material 1631 that may be deposited to form the grain structure 131.

[0182] In this way, the EM layer patterning film 420 eThe deposition material 1631 may be selectively deposited, including but not limited to, using a shadow mask 1515, to form as grain structures 131 by coalescing around each seed 132, including but not limited to, using an open mask and / or a mask-free deposition process.

[0183] In some non-limiting examples, the deposition material 1631 deposited on the exposed layer surface 11 of the device 400 may have dielectric constant properties selected to promote and / or increase absorption of EM radiation by the EM radiation modifying layer 130 generally, or in some non-limiting examples, in wavelength (sub)ranges of the EM spectrum, including but not limited to the visible spectrum, and / or subranges and / or wavelengths thereof, including but not limited to those corresponding to particular colors.

[0184] In some non-limiting examples, the EM layer patterned coating 420 e may include a patterning material 1511 that exhibits a relatively low initial sticking probability to the seed material and / or deposition material 1631, such that the EM layer patterned coating 420 e The surface of the deposition material 1631 (and / or seed material) may, in some instances, be patterned with a non-EM layer 420 n and / or the patterning material 1511 of which they may be configured may exhibit an increased tendency to deposit as grain structures 131, which are used for purposes of inhibiting the deposition of occlusive coating 1240 of deposition material 1631, including applications discussed herein, in addition to forming EM radiation modifying layer 130.

[0185] In some non-limiting examples, the EM layer patterned coating 420 e may include multiple materials, at least one of which is a patterning material 1511, including but not limited to, a patterning material 1511 that exhibits such a relatively low initial adhesion probability relative to the deposition material 1631 and / or seed material, as described above.

[0186] In some non-limiting examples, a first of the plurality of materials may be a patterning material 1511 having a first initial sticking probability that resists deposition of the deposition material 1631 and / or seed material, and a second of the plurality of materials may be a patterning material having a second initial sticking probability that resists deposition of the deposition material 1631 and / or seed material, the second initial sticking probability being greater than the first initial sticking probability.

[0187] In some non-limiting examples, the first initial sticking probability and the second initial sticking probability can be measured using substantially the same conditions and parameters.

[0188] In some non-limiting examples, a first of the plurality of materials may be doped, coated, and / or supplemented with a second of the plurality of materials, whereby the second may act as a seed or heterogeneity and act as a nucleation site for the deposition material 1631 and / or the seed material.

[0189] In some non-limiting examples, the second of the plurality of materials may include NPC 1820. In some non-limiting examples, the second of the plurality of materials may include organic materials, including but not limited to polycyclic aromatic compounds, and / or materials containing non-metallic elements, including but not limited to O, S, nitrogen (N), or C, the presence of which may otherwise be considered contaminants in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the second of the plurality of materials may be deposited at a layer thickness that is a fraction of a monolayer to avoid forming a closure coat 1240 thereof. Rather, monomers 1632 of such material ( FIG. 16 ) may be deposited in a layer thickness that is a fraction of a monolayer to form individual nucleation sites for the deposition material 1631 and / or the seed material. Lateral direction There may be a tendency for the distances to be spaced apart.

[0190] EM layer patterned coating 420 comprising a mixture of first patterning material 15111 and second patterning material 15112e A series of samples were fabricated to evaluate the suitability of the EM radiation-modifying layer 130 formed by the method described above. In all samples, the first patterning material 15111 was a nucleation-inhibiting coating (NIC) that has a substantially low initial sticking probability that resists the deposition of Ag as the deposited material 1631. Three exemplary materials were evaluated as the second patterning material 15112, namely, ETL1937 ( FIG. 19 ) material, Liq, and LiF, which tend to have a relatively high initial sticking probability that resists the deposition of Ag as the deposited material 1631 and may be suitable as NPC1820 in some non-limiting examples.

[0191] For the ETL1937 material, several samples were prepared by co-depositing various ratios of the first patterning material 15111 and the ETL1937 material onto an indium tin oxide (ITO) substrate to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1632 to a nominal layer thickness of 15 nm.

[0192] Six samples were prepared with volume percent ratios of ETL1937 material to first patterning material 15111 of 1:99 (ETL Sample A), 2:98 (ETL Sample B), 5:95 (ETL Sample C), 10:90 (ETL Sample D), 20:80 (ETL Sample E), and 40:60 (ETL Sample F), respectively. Additionally, two comparative samples were prepared with volume percent ratios of ETL1937 material to first patterning material 15111 of 0:100 (Comparative Sample 1) and 100:0 (Comparative Sample 2), respectively.

[0193] ETL sample B demonstrated a total surface coverage of 15.156%, an average characteristic size of 13.6292 nm, a dispersity of 2.0462, a number average particle diameter of 14.5399 nm, and a size average particle diameter of 20.7989 nm.

[0194] ETL sample C demonstrated a total surface coverage of 22.083%, an average characteristic size of 16.6985 nm, a dispersity of 1.6813, a number average particle diameter of 17.8372 nm, and a size average particle diameter of 23.1283 nm.

[0195] ETL Sample D demonstrated a total surface coverage of 27.0626%, an average characteristic size of 19.4518 nm, a dispersity of 1.5521, a number average particle diameter of 20.7487 nm, and a size average particle diameter of 25.8493 nm.

[0196] ETL Sample E demonstrated a total surface coverage of 35.5376%, an average characteristic size of 24.2092 nm, a dispersity of 1.6311, a number average particle diameter of 25.858 nm, and a size average particle diameter of 32.9858 nm.

[0197] 5A to 5E are SEM micrographs of Comparative Sample 1, ETL Sample B, ETL Sample C, ETL Sample D, and ETL Sample E, respectively.

[0198] FIG. 5F is a histogram plotting the histogram distribution of grain structure 131 as a function of characteristic grain size for ETL sample B 505, ETL sample C 510, ETL sample D 515, and ETL sample E 520, with curve fits to histograms 506, 511, 516, and 521, respectively.

[0199] Table 6 below shows the percent reduction in transmittance measured for various samples at various wavelengths.

[0200] [Table 6]

[0201] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of ETL as second patterning material 15112 was relatively low. However, when the ETL concentration was greater than about 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible spectrum, without a significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm in the NIR spectrum.

[0202] For Liq, several samples were prepared by co-depositing various ratios of the first patterning material 15111 and Liq onto an ITO substrate to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1632 to a reference layer thickness of 15 nm.

[0203] Four samples were prepared with volume percent ratios of Liq to first patterning material 15111 of 2:98 (Liq Sample A), 5:95 (Liq Sample B), 10:90 (Liq Sample C), and 20:80 (Liq Sample D), respectively.

[0204] Liq Sample A demonstrated a total surface coverage of 11.1117%, an average characteristic size of 13.2735 nm, a dispersity of 1.651, a number average particle size of 13.9619 nm, and a size average particle size of 17.9398 nm.

[0205] Liq Sample B demonstrated a total surface coverage of 17.2616%, an average characteristic size of 15.2667 nm, a dispersity of 1.7914, a number average particle size of 16.3933 nm, and a size average particle size of 21.941 nm.

[0206] Liquid sample C demonstrated a total surface coverage of 32.2093%, an average characteristic size of 23.6209 nm, a dispersity of 1.6428, a number average particle size of 25.3038 nm, and a size average particle size of 32.4322 nm.

[0207] 5G to 5J are SEM micrographs of Liq Sample A, Liq Sample B, Liq Sample C, and Liq Sample D, respectively.

[0208] FIG. 5K is a histogram plotting the histogram distribution of particle structure 131 as a function of characteristic particle size for Liq sample B 525, Liq sample A 530, and Liq sample C 535, with curve fits to histograms 526, 531, and 536, respectively.

[0209] Table 7 below shows the percent reduction in transmittance measured for various samples at various wavelengths.

[0210] [Table 7]

[0211] As can be seen, there was minimal reduction in transmittance across most wavelengths when the concentration of Liq as second patterning material 15112 was relatively low. However, when the Liq concentration was greater than about 5% by volume, a substantial reduction (>10%) was observed at wavelengths of 450 nm and 550 nm in the visible spectrum, with no significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm and 1,000 nm in the NIR spectrum.

[0212] For LiF, several samples were prepared by first depositing the ETL material onto an ITO substrate to an average layer thickness of 20 nm, then co-depositing a first patterning material 15111 and LiF in various ratios onto the exposed layer surface 11 of the ETL material to an average layer thickness of 20 nm, and then exposing the exposed layer surface 11 to an Ag vapor flux 1632 to a reference layer thickness of 15 nm.

[0213] Four samples were prepared in which the volume percentage ratios of LiF to first patterning material 15111 were 2:98 (LiF Sample A), 5:95 (LiF Sample B), 10:90 (LiF Sample C), and 20:80 (LiF Sample D), respectively.

[0214] 5L to 5O are SEM micrographs of LiF sample A, LiF sample B, LiF sample C, and LiF sample D, respectively.

[0215] FIG. 5P is a histogram plotting the histogram distribution of grain structure 131 as a function of characteristic grain size for LiF sample A 540, LiF sample B 545, and LiF sample D 550, with the curves designated histograms 541, 546, and 551, respectively.

[0216] Table 8 below shows the percent reduction in transmittance measured for various samples at various wavelengths.

[0217] [Table 8]

[0218] As can be seen, there was minimal reduction in transmittance across most wavelengths for relatively low concentrations of LiF as second patterning material 15112. However, when the LiF concentration was increased above about 10% by volume, a significant reduction (8%) was observed at a wavelength of 450 nm in the visible spectrum, with no significant reduction in transmittance at wavelengths of 700 nm in the IR spectrum and 850 nm and 1,000 nm in the NIR spectrum.

[0219] Additionally, substantially no degradation in transmittance at wavelengths above 700 nm was observed for concentrations of LiF up to 20% by volume.

[0220] Table 9 below shows the measured refractive indices of the materials used in the above samples at various wavelengths.

[0221] [Table 9]

[0222] It will be appreciated that for layers or films formed by co-depositing two or more materials, the refractive index of such a layer or film may be estimated using, as a non-limiting example, the leverage rule, which may be applied by calculating, for each material comprising such a layer or film, the product of the material's concentration multiplied by the refractive index of the material, and then taking the sum of all of the products calculated for the materials comprising such a layer or film.

[0223] Co-deposition with dielectric materials Although not shown, in some non-limiting examples, the grain structure 131 that may comprise the EM radiation modifying layer 130 may be formed without the use of a seed 132, for example, including but not limited to, by co-depositing the deposition material 1631 with a co-deposited dielectric material.

[0224] In some non-limiting examples, the ratio of deposition material 1631 to co-deposited dielectric material can range from at least one of about 50:1 to 5:1, about 30:1 to 5:1, and about 20:1 to 10:1. In some non-limiting examples, the ratio can be at least one of about 50:1, about 45:1, about 40:1, about 35:1, about 30:1, about 25:1, about 20:1, about 19:1, about 15:1, about 12.5:1, about 10:1, about 7.5:1, or about 5:1.

[0225] In some non-limiting examples, the co-deposited dielectric material can have an initial sticking probability that can be less than 1 against the deposition of the deposition material 1631 that can be co-deposited.

[0226] In some non-limiting examples, the ratio of deposition material 1631 to codeposited dielectric material can vary depending on the initial sticking probability of the codeposited dielectric material against the deposition of deposition material 1631 .

[0227] In some non-limiting examples, the co-deposited dielectric material can be an organic material. In some non-limiting examples, the co-deposited dielectric material can be a semiconductor. In some non-limiting examples, the co-deposited dielectric material can be an organic semiconductor.

[0228] In some non-limiting examples, co-depositing the deposition material 1631 with the co-deposited dielectric material can facilitate the formation of the grain structure 131 in the EM radiation modifying layer 130 in the absence of a template layer containing the seeds 132.

[0229] In some non-limiting examples, co-depositing the deposition material 1631 with the co-deposited dielectric material can promote and / or increase absorption of EM radiation by the EM radiation modifying layer 130 generally, or in some non-limiting examples, in wavelength (sub)ranges of the EM spectrum, including but not limited to the visible spectrum and / or sub-ranges and / or wavelengths thereof, including but not limited to those corresponding to particular colors.

[0230] Absorption around the emission area In some non-limiting examples, the layered semiconductor device 100 may be an optoelectronic device 600, such as an OLED, that includes at least one emissive region 910 (FIG. 9A). a (FIG. 6A). In some non-limiting examples, the emission region 910 may correspond to at least one semiconductor layer 1930 disposed between a first electrode 1920 (FIG. 19), which in some non-limiting examples may be an anode, and a second electrode 1940 (FIG. 19), which in some non-limiting examples may be a cathode. The anode and cathode are electrically coupled to a power source 1905 (FIG. 19) and may generate holes and electrons, respectively, that move toward each other through the at least one semiconductor layer 1930. When a pair of holes and electrons combine, EM radiation may be emitted in the form of photons.

[0231] In some non-limiting examples, the EM radiation-modifying layer 130 may be deposited on and / or above the exposed layer surface 11 of the second electrode 1940 .

[0232] In some non-limiting examples, the exposed layer surface 11 of the device 100 Lateral directioncan include a first portion 601 ( FIG. 6A ) and a second portion 602 ( FIG. 6A ). In some non-limiting examples, the second portion 602 can include a portion of the exposed layer surface 11 of the underlying layer of the device 100 that is beyond the first portion 601.

[0233] In some non-limiting examples, EM radiation-modifying layer 130 may be omitted or may not extend over first portion 601, but rather may extend only over second portion 602. In some non-limiting examples, first portion 601 may be more or less the same as version 600 of device 100, as shown by way of non-limiting example in FIG. a At least one non-emitting region 2302 (FIG. 23A) Lateral direction 2020 (FIG. 20), and the seed 132 may correspond to the non-EM layer patterned coating 420 n may be deposited before the deposition of

[0234] Such non-limiting configurations may be suitable to enable and / or maximize the transmittance of EM radiation emitted from at least one emitting region 910 while reducing the reflection of external EM radiation incident on the exposed layer surface 11 of the device 100.

[0235] Thus, in such a scenario, as shown in FIG. 6A, the non-EM layer patterned coating 420 n may be deposited not for the purpose of depositing the EM radiation modifying layer 130 but to limit its lateral extent, such a non-EM layer patterned coating 420 n The patterning material 1511, which may comprise, may not exhibit such a relatively low initial sticking probability to the deposition material 1631 and / or seed material as described above.

[0236] Those skilled in the art will understand that, in some non-limiting examples, EM radiation-modifying layer 130 may be omitted from regions of device 100 other than and / or in addition to emitting region 910 of device 100, and second portion 602 may, in some examples, correspond to and / or include such other regions.

[0237] In some non-limiting examples, the change and / or shift in absorption may be centered in an absorption spectrum that is a (sub)range of the EM spectrum, including but not limited to the visible spectrum and / or subranges thereof.

[0238] In some non-limiting examples, as shown in FIG. 6A, a non-EM layer patterned coating 420 n If present, the seed 132 may be deposited on the exposed layer surface 11 after depositing the seed 132 on the template layer, such that the seed 132 may be deposited over both the first portion 601 and the second portion 602, and the non-EM layer patterned coating 420 may be deposited on the exposed layer surface 11. n may cover the seeds 132 deposited over the first portion 601.

[0239] In some non-limiting examples, the non-EM layer patterned coating 420 n can provide a surface with a relatively low initial sticking probability that resists deposition of the seed material as well as the deposition material 1631. b In such an example shown in FIG. 1, the non-EM layer patterned coating 420 n may be deposited before, but not after, any deposition of seed material.

[0240] Non-EM layer patterned coating 420 over first portion 601 n After selective deposition of the conductive deposition material 1631, the conductive deposition material 1631 may be deposited on the device 600 using, in some non-limiting examples, open mask and / or mask-free deposition processes. b A non-EM layer patterned coating 420 may be deposited on n Each seed 132, if present, is not coated with, including but not limited to, the surrounding grain structure 131. t As and / or to form the patterned coating 420, it may remain substantially only in the second portion 602, which may be substantially devoid of the patterned coating 420.

[0241] Non-EM layer patterned coating 420 across first portion 601 n After selective deposition of the seed material, the device 600 may be deposited using, in some non-limiting examples, open mask and / or mask-free deposition processes. b The seed 132 may be deposited on the template layer over the exposed layer surface 11 of the non-EM layer patterned coating 420. n The ionic liquid may remain substantially only in the second portion 602, which may be substantially devoid of ionic liquid.

[0242] Additionally, the deposition material 1631 may be deposited over the exposed layer surfaces 11 of the device 600 using, in some non-limiting examples, open mask and / or mask-free deposition processes, but the deposition material 1631 may be deposited over the non-EM layer patterned coating 420. n Particle structure 131 that may be substantially devoid of t The second portion 602 may remain substantially only within the second portion 602, including, but not limited to, coalescing around the respective seeds 132 as and / or to form therein.

[0243] Non-EM layer patterning coating 420 n In the first portion 601, the device 600 in the second portion 602 b This may provide a surface with a relatively low initial sticking probability against deposition of the deposition material 1631 and / or seed material (if present), which may be substantially less than the initial sticking probability against deposition of the deposition material 1631 and / or seed material, if present, on the exposed layer surface 11 of the underlying layer.

[0244] Thus, the first portion 601 may include the occlusive coating 1240 of the seed 132 and / or the grain structure 131. t , may be substantially devoid of deposition material 1631 that may be deposited within second portion 602 to form by coalescing around seed 132, including but not limited to.

[0245] Those skilled in the art will appreciate that even if some of the deposition material 1631 and / or some of the seed material remain in the first portion 601, the amount of any such deposition material 1631 and / or seeds 132 formed from the seed material may be substantially less in the first portion 601 than in the second portion 602, and any such deposition material 1631 in the first portion 601 may tend to form a discontinuous layer 160 that may be substantially devoid of grain structure 131. The grain structure 131 may be formed by dissolving some of such deposition material 1631 in the first portion 601, including but not limited to, around the seeds 132 formed from the seed material. d Nevertheless, even if such a particle structure 131 d The size, height, weight, thickness, shape, profile, and / or spacing of the grain structure 131 of the EM radiation-modifying layer 130 in the second portion 602 may be such that the absorption of EM radiation in a wavelength (sub) range of the EM spectrum, including but not limited to the visible spectrum, and / or sub-ranges and / or wavelengths thereof, may be substantially less than the absorption in the second portion 602, including but not limited to the visible spectrum, and / or sub-ranges and / or wavelengths thereof, corresponding to a particular color in the first portion 601. t may be sufficiently different from that of

[0246] In this way, the EM layer patterning film 420 n are selectively deposited, including but not limited to, using a shadow mask 1515, and coalesce around each seed 132 to form a grain structure 131. t The deposition material 1631 may be deposited using an open mask and / or a mask-free deposition process to form the

[0247] Those skilled in the art will appreciate that structures that exhibit relatively low reflectivity may be suitable for providing the EM radiation-modifying layer 130 in some non-limiting examples.

[0248] Display panel 7, there is shown a cross-sectional view of a display panel 710. In some non-limiting examples, the display panel 710 may be a version of the layered semiconductor device 100, including, but not limited to, an optoelectronic device 700, with the outermost layer forming a surface 701 thereof.

[0249] The face 701 of the display panel 710 is oriented substantially along a plane defined by the lateral axis. Lateral direction The distance may extend over a range of 100 m.

[0250] User Device In some non-limiting examples, surface 701, or indeed the entire display panel 710, may serve as a surface of user device 700 through which at least one EM signal 731 may be exchanged at a non-zero angle relative to the plane of surface 701. In some non-limiting examples, user device 700 may be a computing device such as, but not limited to, a smartphone, a tablet, a laptop, and / or an e-reader, and / or some other electronic device such as a monitor, a television set, and / or a smart device, including, but not limited to, an automobile display and / or windshield, a domestic appliance, and / or a medical, commercial, and / or industrial device.

[0251] In some non-limiting examples, the surface 701 may correspond to and / or mate with a body 720 and / or an opening 721 therein in which at least one under-display component 730 may be housed.

[0252] In some non-limiting examples, at least one under-display component 730 may be formed integrally with or as an assembled module with the display panel 710 on its surface opposite face 701. In some non-limiting examples, at least one under-display component 730 may be formed on the exposed layer surface 11 of the substrate 10 of the display panel 710 opposite face 701.

[0253] In some non-limiting examples, at least one opening 713 may be formed in the display panel 710 to allow exchange of at least one EM signal 731 through the surface 701 of the display panel 710 at a non-zero angle relative to a plane defined by a lateral axis or, concomitantly, a layer of the display panel 710, including, but not limited to, the surface 701 of the display panel 710.

[0254] In some non-limiting examples, the at least one opening 713 may be understood to include a lack and / or reduction in thickness and / or opacity of a substantially opaque coating that is otherwise disposed across the display panel 710. In some non-limiting examples, the at least one opening 713 may be embodied as a signal transmissive region 820 as described herein.

[0255] However, if at least one aperture 713 is implemented, at least one EM signal 731 may pass therethrough to pass through face 701. As a result, at least one EM signal 731 may be considered to exclude any EM radiation that may extend along a plane defined by the lateral axis, including, but not limited to, any current that may be conducted across the EM radiation-modifying layer 130 laterally across the display panel 710.

[0256] Furthermore, those skilled in the art will understand that the at least one EM signal 731 may be distinguished from EM radiation itself, including, but not limited to, electrical current and / or the electric field generated thereby, in that the at least one EM signal 731, alone or in conjunction with other EM signals 731, may convey some information content, including, but not limited to, an identifier that may distinguish the at least one EM signal 731 from other EM signals 731. In some non-limiting examples, the information content may be conveyed by specifying, altering, and / or modulating at least one of the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and / or other characteristics of the at least one EM signal 731.

[0257] In some non-limiting examples, the at least one EM signal 731 passing through the at least one aperture 713 of the display panel 710 may include at least one photon and, in some non-limiting examples, may have a wavelength spectrum within at least one of, but not limited to, the visible spectrum, the IR spectrum, and / or the NIR spectrum. In some non-limiting examples, the at least one EM signal 731 passing through the at least one aperture 713 of the display panel 710 may have a wavelength within, but not limited to, the IR and / or NIR spectrum.

[0258] In some non-limiting examples, the at least one EM signal 731 passing through the at least one opening 713 of the display panel 710 may include ambient light incident thereon.

[0259] In some non-limiting examples, at least one EM signal 731 exchanged through at least one opening 713 in the display panel 710 can be transmitted and / or received by at least one under-display component 730.

[0260] In some non-limiting examples, the at least one under-display component 730 may have a size larger than a single signal transparent region 820, but may also have multiple, as well as at least one emissive region 910 extending therebetween. Similarly, in some non-limiting examples, the at least one under-display component 730 may have a size larger than a single one of the at least one opening 713.

[0261] In some non-limiting examples, the at least one under-display component 730 may transmit at least one received EM signal 731 beyond the user device 700 and passing through the at least one aperture 713. r a receiver 730 adapted to receive and process r Such a receiver 730 may include rNon-limiting examples include an under-display camera (UDC) and / or sensors including, but not limited to, an IR sensor, a NIR sensor, a LIDAR detection module, a fingerprint detection module, a light detection module, an IR (proximity) detection module, an iris recognition detection module, and / or a facial recognition detection module.

[0262] In some non-limiting examples, the at least one under-display component 730 may include a transmitter 730 adapted to emit at least one transmitted EM signal 731t through the at least one aperture 713 beyond the user device 700. t Such a transmitter 730 may include t Non-limiting examples of include EM radiation sources including, but not limited to, built-in flash, flashlight, IR emitter, and / or NIR emitter, and / or LIDAR detection module, fingerprint detection module, light detection module, IR (proximity) detection module, iris recognition detection module, and / or facial recognition detection module and / or portions thereof.

[0263] In some non-limiting examples, at least one EM signal 731 passing through at least one opening 713 in the display panel 710 across the user device 700 may include, but is not limited to, a transmitter 730 t those transmitted EM signals 731 emitted by at least one under-display component 730 including t , emanating from the display panel 710 and passing through at least one opening 713 in the display panel 710 to generate a radiated EM signal 731 r Receiver 730 r 7. The at least one under-display component 730 may include:

[0264] In some non-limiting examples, under-display components 730 may include an IR emitter and an IR sensor. As non-limiting examples, such under-display components 730 may include as a part, component, or module thereof a dot-matrix projector, a time-of-flight (ToF) sensor module capable of operating as a direct and / or indirect ToF sensor, a vertical cavity surface-emitting laser (VCSEL), a flood illuminator, a NIR imager, folded optics, or a diffraction grating.

[0265] In some non-limiting examples, there may be multiple under-display components 730 within the user device 700, the first of which transmits at least one transmitted EM signal 731 for passing through at least one aperture 713 beyond the user device 700. t a transmitter 730 for emitting t a second of which includes at least one received EM signal 731 r a receiver 730 for receiving r In some non-limiting examples, such a transmitter 730 t and receiver 730 r may be embodied in a single common under-display component 730.

[0266] This can be seen as a non-limiting example in FIG. 8A, where the version of the user device 700 is Lateral direction In some non-limiting examples, the user device 700 is shown as having a display panel 710 including at least one display portion 815 adjacent to, and separated in some non-limiting examples by, at least one signal exchanging display portion 816 across the face 701 (shown vertically in the figures). The user device 700 may also include at least one transmitted EM signal 731 that, in some non-limiting examples, substantially corresponds to the first signal exchanging display portion 816 beyond the face 701. t at least one transmitter 730 for transmitting through at least one first signal transmitting region 820t , and at least one received EM signal 731 through at least one second signal transparent area 820, which in some non-limiting examples substantially corresponds to a second signal exchanging display portion 816. r A receiver 730 for receiving r In some non-limiting examples, at least one of the first and second signal exchange display units 816 may be the same.

[0267] 8B, which shows a planar version of a user device 700 according to a non-limiting example, including a display panel 710 defining a face of the device 700. The device 700 includes at least one transmitter 730 positioned beyond the face 701. t and at least one receiver 730 r 8C shows a cross-sectional view of device 700 taken along line 8C-8C.

[0268] The display panel 710 includes a display portion 815 and a signal switching display portion 816. The display portion 815 includes a plurality of emissive regions 910 (not shown). The signal switching display portion 816 includes a plurality of emissive regions 910 (FIG. 9A) (not shown) and a plurality of signal transmitting regions 820. The plurality of emissive regions 910 in the display portion 815 and the signal switching display portion 816 may correspond to the subpixels 710 of the display panel 264x. The plurality of signal transmitting regions 820 in the signal switching display portion 816 may be configured to allow EM signals having wavelengths (ranges) corresponding to the IR spectrum to pass through the entire cross-sectional surface thereof. At least one transmitter 730 t and at least one receiver 730 r may be positioned behind a corresponding signal exchanging display portion 816 of the panel 710 such that IR signals may be emitted and received, respectively, by passing through the signal exchanging display portion 816 of the panel 710. In the illustrated non-limiting example, at least one transmitter 730 t and at least one receiver 730 rEach of these is shown as having a corresponding signal exchange display portion 816 disposed in the path of the signal transmission.

[0269] FIG. 8D illustrates a planar version of a user device 700 according to a non-limiting example, including at least one transmitter 730. t and at least one receiver 730 r are both located behind a common signal exchange and display unit 816. As a non-limiting example, the signal exchange and display unit 816 may be t and receiver 730 r 8E shows a cross-sectional view taken along line 8E-8E of FIG. 8D.

[0270] 8F illustrates a planar version of user device 700, according to a non-limiting example, in which display panel 710 further includes non-display portion 851. In some non-limiting examples, display panel 710 includes at least one transmitter 730. t and at least one receiver 730 r, each of which may be disposed behind a corresponding signal exchanging display portion 816. The non-display portion 851 may be disposed adjacent to and between the two signal exchanging display portions 816 in a plan view. The non-display portion 851 may be substantially devoid of an emissive area 910. In some non-limiting examples, the device 700 may house a camera 840 disposed in the non-display portion 851. In some non-limiting examples, the non-display portion 851 may include a through-hole portion 852 that may be disposed to overlap the camera 840. In some non-limiting examples, the panel 710 within the through-hole portion 852 may be substantially devoid of any layers, coatings, and / or components that may be present in the display portion 815 and / or the signal exchanging display portion 816. As a non-limiting example, the panel 710 within the through-hole portion 852 may be substantially devoid of backplane and / or frontplane components; otherwise, the presence of the backplane and / or frontplane components may interfere with images captured by the camera 840. In some non-limiting examples, the cover glass of the panel 710 can extend substantially across the display portion 815, the signal exchanging display portion 816, and the through-hole portion 852, and can be present in all of the aforementioned portions of the panel 710. In some non-limiting examples, the panel 710 can further include a polarizer (not shown), and the polarizer can extend substantially across the display portion 815, the signal exchanging display portion 816, and the through-hole portion 852, such that the polarizer can be present in all of the aforementioned portions of the panel 710. In some non-limiting examples, the through-hole portion 852 can be substantially devoid of a polarizer to enhance transmission of light through such portion of the panel 710.

[0271] In some non-limiting examples, the non-display portion 851 of the panel 710 can further include a non-through-hole portion 853. As a non-limiting example, the non-through-hole portion 853 can include: Lateral directionThe non-through-hole portion 853 may be disposed within the display panel 710 between the through-hole portion 852 and the signal exchanging display portion 816. In some non-limiting examples, the non-through-hole portion 853 may surround at least a portion or all of the periphery of the through-hole portion 852. Although not specifically shown, the device 700 may include additional modules, components, and / or sensors in a portion of the device 700 that corresponds to the non-through-hole portion 853 of the display panel 710.

[0272] In some non-limiting examples, the signal exchanging display portion 816 may reduce the number of or be substantially devoid of backplane components that would otherwise impede or reduce transmission of EM radiation through the signal exchanging display portion 816. As a non-limiting example, the signal exchanging display portion 816 may be substantially devoid of TFT structures 901, including, but not limited to, metal trace lines, capacitors, and / or other opaque or light-absorbing elements. In some non-limiting examples, the emissive region 910 in the signal exchanging display portion 816 may be electrically coupled to one or more TFT structures 901 located in the non-through-hole portion 853 of the non-display portion 851. Specifically, the TFT structures 901 for actuating the subpixels 264x in the signal exchanging display portion 816 may be relocated outside the signal exchanging display portion 816 and within the non-through-hole portion 853 of the panel 710 to achieve a relatively high transmittance of EM radiation in at least the IR and / or NIR spectrum through the non-emissive region 2302 (not shown) in the signal exchanging display portion 816. As a non-limiting example, the TFT structure 901 in the non-through-hole portion 853 may be electrically coupled to the subpixel 264x in the signal switching display portion 816 via a conductive trace. t and receiver 730 r so that the distance that current travels between the TFT structure 901 and the subpixel 264x can be reduced. Lateral direction The through-hole portion 853 is disposed adjacent to and / or in close proximity to the non-through-hole portion 853.

[0273] In some non-limiting examples, the emissive regions 910 may be configured such that at least one of their aperture ratio and pixel density may be the same in both the display portion 815 and the signal exchanging display portion 816. In some non-limiting examples, the pixel density may be greater than at least one of about 300 ppi, about 350 ppi, about 400 ppi, about 450 ppi, about 500 ppi, about 550 ppi, or about 600 ppi. In some non-limiting examples, the aperture ratio value may be at least one of about 25%, about 27%, about 30%, about 33%, about 35%, or about 40%. In some non-limiting examples, the emissive regions 910 or pixels 264x of the panel 710 may be substantially identically shaped and positioned between the display portion 815 and the signal exchanging display portion 816 to reduce the likelihood that a user will detect a visual difference between the display portion 815 and the signal exchanging display portion 816 of the panel 710.

[0274] 8H shows a partially cutaway, enlarged view of a portion of panel 710 in plan view, according to a non-limiting example. Specifically, the configuration and layout of emissive regions 910, represented as subpixels 264x, within display portion 815 and signal switching display portion 816 are shown. Within each portion, multiple emissive regions 910 may be provided, each corresponding to a subpixel 264x. In some non-limiting examples, subpixels 264x may correspond to R (red) subpixel 2641, G (green) subpixel 2642, and / or B (blue) subpixel 2643, respectively. Within signal switching display portion 816, multiple signal transmissive regions 820 may be provided between adjacent subpixels 264x.

[0275] In some non-limiting examples, the display panel 710 may further include a transition region (not shown) between the display portion 815 and the signal switching display portion 816, and the configuration of the emissive regions 910 and / or signal transmitting regions 820 may differ from the configuration of adjacent display portions 815 and / or signal switching display portions 816. In some non-limiting examples, the presence of such a transition region may be omitted such that the emissive regions 910 are provided in a substantially continuous repeating pattern across the display portion 815 and the signal switching display portion 816.

[0276] Here, an exemplary version 900 of the user device 700 a 9A , which is a simplified block diagram of the TFT insulating layer 909, although not shown, in some non-limiting examples, the thickness of the pixel definition layer (PDL) 940 in at least one signal transmitting region 820, in some non-limiting examples, in at least a region spaced laterally from an adjacent emissive region 910, and in some non-limiting examples, the thickness of the pixel definition layer (PDL) 940 of the TFT insulating layer 909 may be reduced to increase the transmittance and / or transmittance angle to and through the layers of the surface 701.

[0277] In some non-limiting examples, at least one of the radiating regions 910 Lateral direction 2010 (FIG. 20) may extend across and include at least one TFT structure 901 associated therewith for driving the emissive region 910 along a data line and / or a scan line (not shown), and in some non-limiting examples may be formed from copper (Cu) and / or transparent conducting oxide (TCO).

[0278] In some non-limiting examples, at least one received EM signal 731 r is at least one transmitted EM signal 731 t , which is reflected from or otherwise returned by the exterior surface of the user device 700.

[0279] Referring again to FIG. 8A, in some non-limiting examples, the user device 700 may include at least one transmitter 730. t At least one transmitted EM signal 731 t and pass through the display panel 710 so that it is incident on a face, profile, or other portion of a user 80 of the user device 700. At least one transmitted EM signal 731 incident on the user 80 t A fraction of the signal is reflected or otherwise returned by the user 80 to produce at least one received EM signal 731. r and then at least one receiver 730 r The signal passes through the display panel 710 to be received and / or detected by the

[0280] In some non-limiting examples, at least one transmitter 730 t At least one transmitted EM signal 731 t and reflecting it from the user 80 to at least one receiver 730 r and at least one received EM signal 731 associated therewith, detected by r (collectively EM signal pair 731) to provide biometric authentication of user 80.

[0281] In some non-limiting examples, at least one transmitter 730 t transmits at least one transmitted IR signal 731 t 7. The at least one receiver 730 may be an IR emitter for emitting at least one EM signal 731 having a wavelength range within the IR spectrum and / or the NIR spectrum. r at least one received IR signal 731 r 731. As an example, the EM signal 731 may be an IR sensor for receiving at least one EM signal 731 having a wavelength within the IR spectrum and / or the NIR spectrum.

[0282] In some non-limiting examples, the signal transmissive regions 820 of the display panel 710 may be arranged in an array, with at least one transmitter 730 t and / or at least one receiver 730 r may be positioned within the user device 700 behind the display panel 710 such that at least one EM signal pair 731 associated therewith is configured to pass through at least one signal-transmitting region 820 of the display panel 710.

[0283] In some non-limiting examples, at least one transmitter 730- t and at least one receiver 730 r may be positioned to allow at least one EM signal pair 731 associated therewith to pass through a common signal transmission region 820. In some non-limiting examples, at least one transmitter 730 t and at least one receiver 730 r may be positioned to allow at least one EM signal pair 731 associated with them to pass through a different signal transparent region 820.

[0284] As shown in FIG. 9A, at least one emissive region 910 in the display panel 710 Lateral direction 16. The exposed layer surface 11 of the underlying layer may be associated with the second portion 602 of the underlying layer, and the closed coating 1240 of the deposition material 1631 may be deposited thereon.

[0285] At least one signal-transmitting region 820 in the display panel 710 is formed by the EM layer patterned coating 420. e may be disposed on the exposed layer surface 11 of the underlying layer. Lateral direction and at least one grain structure 131 t 1. The EM radiation-modifying layer 130 may be associated with an exposed layer surface 11 having an EM radiation-modifying layer 130 disposed thereon, the EM radiation-modifying layer 130 including a discontinuous layer 160 of

[0286] In some non-limiting examples, at least one signal transparent region 820 can be substantially devoid of occlusive coating 1240 of deposition material 1631 .

[0287] In some non-limiting examples, at least one signal transparent region 820 may facilitate absorption of EM radiation in at least the wavelength range of the visible spectrum while transmitting EM radiation in at least the wavelength range of the IR spectrum.

[0288] This allows at least one transmitted IR signal 731 t and at least one received IR signal 731 r However, they may be transmitted therethrough to at least some extent in the IR spectrum, while at the same time allowing them to absorb at least a portion of these (or other) EM signals 731, including EM signals 731 (not shown) within at least the wavelength range of the visible spectrum, that may be incident on the display panel 710 from an external source, to some extent in the visible spectrum.

[0289] In this way, the IR emitter 730 t and IR detector 730 r The presence of at least one transmitted IR signal 731 t and at least one received IR signal 731 r However, the display panel 710 may be at least partially hidden from the user 80 without substantially preventing other functions from being transmitted through the display panel 710 , including, but not limited to, providing biometric authentication of the user 80 .

[0290] Such a configuration of the display panel 710 allows, for example, the IR emitter 730 to be illuminated without substantially impairing the user experience. t and / or IR detector 730 r may be positioned within the user device 700, at least one signal transmissive area 820 may be positioned within a lateral extent of the display panel 710, and / or an IR emitter 730 from the user 80. t and / or IR detector 730 rThis can be advantageous to facilitate concealment of

[0291] In some non-limiting examples, the IR emitter 730 t and / or IR detector 730 r It will be appreciated that the at least one under-display component 730, including but not limited to, may be sized to underlie not only a single signal transparent region 820, but multiple signal transparent regions 820, and / or at least one emissive region 910 extending therebetween. In such an example, the at least one under-display component 730 may be positioned under such multiple signal transparent regions 820 and may exchange EM signals 731 passing through such multiple signal transparent regions 820 at a non-zero angle relative to and through the layers of the display panel 710.

[0292] In some non-limiting examples, in at least a portion of the emitting region 910, at least one semiconductor layer 1930 may be deposited on the exposed layer surface 11 of the face 701, which in some non-limiting examples includes the first electrode 1920.

[0293] In some non-limiting examples, exposed layer surface 11 of face 701, which may include at least one semiconductor layer 1930, may be exposed to a vaporized flux 1512 of patterning material 1511 ( FIG. 15 ), including but not limited to, using a shadow mask 1515, to form patterned film 420 in first portion 601. Whether or not a shadow mask 1515 is employed, patterned film 420 may be formed by the use of a Lateral direction , may be substantially limited to the signal transmission area 820.

[0294] In some non-limiting examples, the exposed layer surface 11 of face 701 may be exposed to a vapor flux 1632 of deposition material 1631 in an open-mask and / or mask-free deposition process, including but not limited to.

[0295] In some non-limiting examples, at least one signal transparent region 820 Lateral direction The exposed layer surface 11 of the face 701 in 2020 may include a patterned coating 420. Thus, at least one signal transmissive region 820 Lateral direction In 2020, a vapor flux 1632 of deposition material 1631 incident on the exposed layer surface 11 of the patterned coating 420 forms at least one grain structure 131 on the exposed layer surface 11 of the patterned coating 420. t may be formed as EM radiation-modifying layer 130. In some non-limiting examples, the surface coverage in EM radiation-modifying layer stack 130 may be less than or equal to at least one of about 70%, 60%, 50%, 40%, 30%, 25%, 20%, 15%, or 10%.

[0296] At the same time, the patterned coating 420 Lateral direction In some non-limiting examples, the emitting region 910 is substantially restricted to the non-emitting region 2302. Lateral direction The exposed layer surface 11 of the face 710 in 2010 may include at least one semiconductor layer 1930. Thus, at least one emitting region 910 Lateral direction Within the second portion 602 of 2010 , the vapor flux 1632 of the deposition material 1631 incident on the exposed layer surface 11 may form a closure film 1240 of the deposition material 1631 as the second electrode 1940 .

[0297] Thus, in some non-limiting examples, the patterned coating 420 may serve a dual purpose: to provide a base for deposition of the EM layer radiation modifying layer 130 in the first portion 601; e and a non-EM layer patterned coating 420 for limiting the lateral extent of deposition of the deposition material 1631 as the second electrode 1940 onto the second portion 602 without employing a shadow mask 1515 during deposition of the deposition material 1631. n It can be useful as.

[0298] In some non-limiting examples, the average film thickness of the closure coating 1240 of the deposition material 1631 can be at least one of about 5 nm, 6 nm, or 8 nm. In some non-limiting examples, the deposition material 1631 can include MgAg.

[0299] In some non-limiting examples, the second electrode 1920 can extend partially over the patterned coating 420 in the transition region 925 .

[0300] EM Radiation Modification Layer Details In some non-limiting examples, the EM radiation modifying layer 130 is deposited using a mask-free and / or open-mask deposition process to form the EM layer patterned coating 420. e At least one particle structure 131 deposited on t may include:

[0301] Without wishing to be limited to any particular theory, it is believed that the formation of the closure coating 1240 on the deposited material 1631 is due to the EM layer patterning coating 420 e While the EM layer patterning coating 420 may be substantially inhibited by and / or on e When the vaporized monomers 1632 of the deposition material 1631 are exposed to deposition of the deposition material 1631 thereon, the vaporized monomers 1632 of the deposition material 1631 eventually form at least one particle structure 131 of the deposition material 1631 thereon. t It can be assumed that the following can be formed:

[0302] Thus, the EM radiation modifying layer 130 may, in some non-limiting examples, be formed by modifying at least one grain structure 131 of the deposited material 1631. t In some non-limiting examples, the grain structure 131 may include a discontinuous layer 160. In some non-limiting examples, the grain structure 131 may include a discontinuous layer 160. t In other words, in some non-limiting examples, the discontinuous coating 130 may have grain structures 131 that may be physically separated from one another such that the EM radiation-modifying layer 130 does not form a closed coating 1240. tThe present invention may include features including:

[0303] Such an EM radiation modifying layer 130 may therefore, in some non-limiting examples, be used as an EM layer patterning coating 420 in the display panel 710. e and at least one coating layer 915, and substantially laterally interposed therebetween. t The deposition material 1631 may include a thin, dispersed layer of the deposition material 1631 formed as a

[0304] In some non-limiting examples, the grain structure 131 of the deposited material 1631 in the EM radiation modifying layer 130 t At least one of the EM layer patterning coating 420 e In some non-limiting examples, the grain structure 131 of the deposited material 1631 in the EM radiation-modifying layer 130 may be in physical contact with the exposed layer surface 11 of the deposited material 1631. t Substantially all of the EM layer patterned coating 420 e The exposed layer surface 11 may be in physical contact with the exposed layer surface 11.

[0305] Without being bound by any particular theory, it is somewhat surprising that the EM layer patterning coating 420 e The metal grain structure 131 in the discontinuous layer 160 of the exposed layer surface 11 t At least one particle structure 131, including but not limited to t The presence of such a thin dispersed EM radiation modifying layer 130 of deposited material 1631, including but not limited to, may manifest one or more various properties and associated various behaviors, including but not limited to, optical effects and properties of the display panel 710, as discussed herein. In some non-limiting examples, such effects and properties may be manifested by the EM layer patterned coating 420 e Grain structure on 131 t can be controlled to some extent by judicious selection of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or degree of dispersion of the particles.

[0306] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such EM radiation modifying layer 130 may be determined, in some non-limiting examples, by at least one property of patterning material 1511, EM layer patterning coating 420, e Average thickness of EM layer patterned coating 420 e Introduction of non-uniformity in the EM layer and / or patterned coating 420 e The patterning material 1511 may be controlled by carefully selecting at least one of the deposition environment, including but not limited to, temperature, pressure, duration, deposition rate, and / or deposition process.

[0307] In some non-limiting examples, the formation of at least one of the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or dispersion of such EM radiation modifying layer 130 may be determined, in some non-limiting examples, by at least one property of the deposited material 1631, the EM layer patterned coating 420, e The degree to which the deposition material 1631 may be exposed to deposition (which may, in some non-limiting examples, be specified in terms of the thickness of the corresponding discontinuous layer 160) and / or may be controlled by judiciously selecting at least one of the deposition environment, including, without limitation, the temperature, pressure, duration, deposition rate, and / or deposition method of the deposition material 1631.

[0308] In some non-limiting examples, at least one grain structure 131 of the EM radiation modifying layer 130 t can be provided to exhibit greater absorption in at least a wavelength subrange of the visible spectrum than in the IR and / or NIR spectrum. In some non-limiting examples, the at least one grain structure 131 of the EM radiation-modifying layer 130 t can be provided such that they absorb EM radiation within at least a wavelength subrange of the visible spectrum and do not substantially absorb EM radiation within the IR and / or NIR spectrum.

[0309] In some non-limiting examples, at least one particle structure 131 t The EM radiation modifying layer 130 of deposited material 1631, including but not limited to, may include and / or function as a UVA absorbing coating 130, which may absorb EM radiation generally in the UVA spectrum.

[0310] In some non-limiting examples, it may be beneficial to provide such a UVA absorbing coating 130 to reduce and / or mitigate the transmission of UVA radiation through the display panel 710. As a non-limiting example, the presence of such a UVA absorbing coating 130 may enhance the quality of the image captured by the under-display component 730 through the display panel 710 by reducing interference caused by UVA radiation.

[0311] In some non-limiting examples, the EM radiation modifying layer 130 may absorb EM radiation in at least a portion of the UV spectrum and at least a portion of the visible spectrum, while demonstrating reduced and / or substantially no absorption of EM radiation in the IR and / or NIR spectrum.

[0312] In some non-limiting examples, an optical effect can be described in terms of its effect on the transmission and / or absorption wavelength spectrum, including the wavelength range and / or its peak intensity.

[0313] Additionally, while the presented models may suggest specific effects imparted to the transmission and / or absorption of EM radiation passing through such EM radiation modifying layer 130, in some non-limiting examples, such effects may reflect local effects that may not be reflected on a broad and observable basis.

[0314] In some non-limiting examples, the grain structure 131 in the EM radiation modifying layer 130 (used observation window) t The characteristic size of may reflect a statistical distribution.

[0315] In some non-limiting examples, the absorption spectrum intensity ist For a particular distribution of characteristic sizes, there may be a trend proportional to the deposition density of the EM radiation modifying layer 130.

[0316] In some non-limiting examples, the grain structure 131 in the EM radiation modifying layer 130 (used observation window) t The characteristic sizes of may be concentrated around a single value and / or within a relatively narrow range.

[0317] In some non-limiting examples, the grain structure 131 in the EM radiation modifying layer 130 (used observation window) t The characteristic size of may be concentrated around multiple values ​​and / or within multiple relatively narrow ranges. As a non-limiting example, the grain structure of the EM radiation-modifying layer 130 may be characterized by the grain structure 131 within (the used observation window of) the EM radiation-modifying layer 130. t may manifest multimodal behavior such that there are several different values ​​and / or ranges around which the characteristic size of

[0318] In some non-limiting examples, the EM radiation-modifying layer 130 may include at least one first grain structure 1311 having a first range of characteristic sizes and at least one second grain structure 1312 having a second range of characteristic sizes. In some non-limiting examples, the first range of characteristic sizes may correspond to sizes of approximately 50 nm or less, and the second range of characteristic sizes may correspond to sizes of at least 50 nm. As non-limiting examples, the first range of characteristic sizes may correspond to sizes of approximately 1-49 nm, and the second range of characteristic sizes may correspond to sizes of approximately 50-300 nm. In some non-limiting examples, the at least one grain structure 1311 may have a characteristic size in at least one range of approximately 10-40 nm, 5-30 nm, 10-30 nm, 15-35 nm, 20-35 nm, or 25-35 nm. In some non-limiting examples, the majority of the second grain structures 1312 can have a characteristic size in at least one range of about 50-250 nm, about 50-200 nm, about 60-150 nm, about 60-100 nm, or about 60-90 nm. In some non-limiting examples, the first grain structures 1311 and the second grain structures 131-2 can be interspersed with each other.

[0319] To study the formation of such multimodal particle structures 131, a series of five samples was fabricated. Each sample consisted of a glass substrate with an approximately 20 nm thick organic semiconductor layer 1930, followed by an approximately 34 nm thick Ag layer, followed by an approximately 30 nm thick EM layer patterned coating 420. e is deposited, and then an EM layer patterning film 420 is formed. e The surfaces of the samples were prepared by subjecting them to Ag vapor flux 1632. SEM images of each sample were taken at various magnifications.

[0320] 10A shows an SEM image 1000 of a first sample and a further enlarged SEM image 1005. As can be seen in image 1000, there are a large number of first grain structures 1311 that may tend to be concentrated around a first small characteristic size, and a smaller number of second grain structures 1312 that may tend to be concentrated around a second larger characteristic size. Grain structures 1311 as a function of characteristic grain size t The plot 1010 of counts may show that the majority of the first grain structures 1311 may be concentrated around about 30 nm. Analysis shows that the surface coverage of the observation window of the image 1000 of the first grain structures 1311, which have a characteristic size of about 50 nm or less, was about 38%, while the surface coverage of the observation window of the image 1000 of the second grain structures 1312, which have a characteristic size of at least about 50 nm, was about 1%.

[0321] 10B shows an SEM image 1020 of the second sample and a further enlarged SEM image 1025. As can be seen from image 1020, there continues to be a large number of first grain structures 1311, which may tend to be concentrated around a first characteristic size, while a large number of second grain structures 1312, which may tend to be concentrated around a second characteristic size, may be larger. Furthermore, such second grain structures 1312 may tend to be more prominent. Grain structures 131 as a function of characteristic grain size t The plot 1030 of counts may show two distinguishable peaks: a large peak for the first particle structure 1311 centered around about 30 nm, and a smaller peak for the second particle 1312 centered around about 75 nm. Analysis shows that the surface coverage of the observation window in the image 1020 of the first particle structure 1311, which had a characteristic size of about 50 nm or less, was about 23%, while the surface coverage of the observation window in the image 1020 of the second particle structure 1312, which had a characteristic size of at least about 50 nm, was about 10%.

[0322] 10C shows an SEM image 1040 of the third sample and a further enlarged SEM image 1045. As can be seen from image 1040, there is still a large number of first grain structures 1311 that may tend to be concentrated around a first characteristic size, while a large number of second grain structures 1312 that may tend to be concentrated around a second characteristic size are present, as shown in the diagram of grain structure 131 as a function of characteristic grain size. t The counts of the second sample A plot 1050 may be even greater than the first particle structure 131 -1 The image 1040 of the first particle structure 1311, which has a characteristic size of about 50 nm or less, shows two distinct peaks, with a large peak centered around 30 nm and a smaller (but larger than that shown in plot 1030) peak for the second particle structure 1312 centered around 75 nm. The analysis shows that the surface coverage of the observation window in the image 1040 of the first particle structure 1311, which has a characteristic size of about 50 nm or less, was about 19%, while the surface coverage of the observation window in the image 1040 of the second particle structure 1312, which has a characteristic size of at least about 50 nm, was about 21%.

[0323] 10D shows an SEM image 1060 of the fourth sample and a further enlarged SEM image 1065. As can be seen from image 1060, there continues to be a large number of first grain structures 1311, which may tend to be concentrated around a first characteristic size, while a large number of second grain structures 1312, which may tend to be concentrated around a second characteristic size, may be larger. t Plot 1070 of the counts may show two distinguishable peaks: a large peak for the first grain structure 1311 centered around about 20 nm, and a small peak for the second grain structure 1312 centered around about 85 nm. Analysis shows that the surface coverage of the observation window in image 1060 for the first grain structure 1311, which had a characteristic size of about 50 nm or less, was about 14%, while the surface coverage of the observation window in image 1060 for the second grain structure 1312, which had a characteristic size of at least about 50 nm, was about 34%.

[0324] 10E shows an SEM image 1080 of the fifth sample and a further enlarged SEM image 1085. As can be seen from image 1080, there continues to be a large number of first grain structures 1311, which may tend to be concentrated around a first characteristic size, while a large number of second grain structures 1312, which may tend to be concentrated around a second characteristic size, may be larger. In fact, the second grain structures 1312 may tend to dominate. Grain structures 131 as a function of characteristic grain size t Plot 1090 of the counts shows two distinguishable peaks, a major peak centered around 15 nm for the first particle structure 1311 and a minor peak centered around 85 nm for the second particle structure 1312. Analysis shows that the surface coverage of the observation window in image 1080 of the first particle structure 1311, which has a characteristic size of about 50 nm or less, was about 3%, while the surface coverage of the observation window in image 1080 of the second particle structure 1312, which has a characteristic size of at least about 50 nm, was about 55%.

[0325] Without wishing to be limited to any particular theory, in some non-limiting examples, such multi-modal behavior of the EM radiation-modifying layer 130 may be due to the EM layer patterning coating 420, including, but not limited to, doping, coating, and / or supplementing the patterning material 1511 with another material that may function as a seed or inhomogeneity that may act as such nucleation sites. e It may be hypothesized that the first grain structure 1311 of a first characteristic size may be generated by introducing a plurality of nucleation sites for the deposition material 1631 within the EM layer patterned coating 420, which may be substantially free of such nucleation sites. e It can be hypothesized that second grain structures 1312 of a second characteristic size may tend to form at the locations of such nucleation sites.

[0326] Those skilled in the art will appreciate that there may be other mechanisms by which such multi-modal behavior may be produced.

[0327] The above also assumes, as a simplifying assumption, that the NPs modeling each particle structure 131 may have a perfect spherical shape. Typically, the particle structures 131 within the EM radiation-modifying layer 130 t The shape of the grain structure 131 can depend greatly on the deposition process. t The shape of can have a significant effect on the width, wavelength range, and / or intensity of the resonance band, and concomitantly, its absorption band, including but not limited to, for the SP excitations manifested thereby.

[0328] In some non-limiting examples, (grain structure 131 t The material surrounding the EM radiation-modifying layer 130, whether underlying it (such that a material may be deposited on its exposed layer surface 11) or subsequently disposed on the exposed layer surface 11 of the EM radiation-modifying layer 130, can affect the optical effects produced by the emission of and / or transmission of EM radiation and / or EM signals 731 through the EM radiation-modifying layer 130.

[0329] Particle structure 131 t The EM radiation modifying layer 130 containing e It can be hypothesized that disposing the EM radiation-modifying layer 130 on, and / or in physical contact with, and / or proximity to, the exposed layer surface 11 may, in some non-limiting examples, shift the absorption spectrum of the EM radiation-modifying layer 130.

[0330] The EM radiation modifying layer 130 is an EM layer patterned coating 420 e The display panel 710 may be disposed on and / or in physical contact with and / or proximity to the EM layer patterned coating 420, including but not limited to such that such absorption spectrum may be substantially overlapping and / or non-overlapping with at least a wavelength (sub)range of the EM spectrum, including but not limited to the visible spectrum, UV spectrum, and / or IR spectrum. eThe presence of may be configured such that the absorption spectrum of the EM radiation-modifying layer 130 may be adjusted and / or modified.

[0331] In some non-limiting examples, when deposited as a film and / or coated in some form, and the EM layer patterned coating 420 in the display panel 710 e Under the same conditions as the deposition of EM layer patterning film 420 e , and / or the patterning material 1511, when deposited as a film and / or coated in some form, and under conditions similar to the deposition of the EM radiation modifying layer 130 in the display panel 710, may have a first surface energy that is less than or equal to the second surface energy of the deposited material 1631, in some non-limiting examples.

[0332] In some non-limiting examples, the quotient of the second surface energy / first surface energy can be at least one of at least about 1, 5, 10, or 20.

[0333] In some non-limiting examples, at least one grain structure 131 deposited thereon t EM layer patterning coating 420 e The surface coverage of the region may be less than or equal to a maximum threshold coverage.

[0334] In some non-limiting examples, the particle structure 131 t may have a characteristic size that may be in at least one of the following ranges: approximately 1-200 nm, 1-150 nm, 1-100 nm, 1-50 nm, 1-40 nm, 1-30 nm, 1-20 nm, 5-20 nm, or 8-15 nm, in the context of allowing transmission of EM signals 731 in the IR and / or NIR spectrum through signal transmission region 820 of face 701 of display panel 710 passing at a non-zero angle relative to the layers of face 701.

[0335] In some non-limiting examples, the particle structure 131 tmay have an average feature size and / or median feature size of at least one of about 5-100 nm, about 5-50 nm, about 5-40 nm, about 5-30 nm, about 5-25 nm, about 5-20 nm, or about 8-15 nm, in the context of enabling transmission of EM signals 731 in the IR and / or NIR spectrum through signal transmissive region 820 of surface 701 of display panel 710 passing at a non-zero angle relative to the layers of surface 701. By way of non-limiting example, such average and / or median dimensions may be used to characterize the grain structure 131 of EM radiation-modifying layer 130. t may correspond to the mean diameter and / or median diameter, respectively.

[0336] In some non-limiting examples, the particle structure 131 t A majority of the may have at least one maximum feature size of about 100 nm or less, about 80 nm or less, about 50 nm or less, about 40 nm, about 30 nm or less, about 25 nm or less, about 20 nm or less, or about 15 nm or less in the context of allowing transmission of EM signals 731 in the IR and / or NIR spectrum through the signal transmission region 820 of the face 701 of the display panel 710 passing at a non-zero angle relative to the layers of the face 701.

[0337] In some non-limiting examples, the particle structure 131 t The percentage may have a maximum feature size of at least one of about 70%, about 60%, about 50%, about 40%, about 30%, about 25%, about 20%, about 15%, or about 10% of the EM radiation modifying layer 130 in the context of allowing transmission of EM signals 731 in the IR and / or NIR spectrum through the signal transmission region 820 of the face 701 of the display panel 710 passing at a non-zero angle relative to the layers of the face 701.

[0338] In some non-limiting examples, the particle structure 131 tmay be configured to permit transmission of EM signals 731 in the IR and / or NIR spectrum passing through the signal transmissive region 820 of the face 701 of the display panel 710 at a non-zero angle relative to the layers of the face 701, while absorbing EM signals 731 in at least a subrange of the visible and / or UV spectrum. In some non-limiting examples, such particle structures 131 t (i) a coverage of at least one of about 10-50%, about 10-45%, about 12-40%, about 15-40%, about 15-35%, about 18-35%, about 20-35%, or about 20-30%, (ii) a majority of the particle structures 131t may have a maximum feature size of at least one of about 40 nm, about 35 nm, about 30 nm, about 25 nm, or about 20 nm, and (iii) an average feature size and / or median feature size of at least one of about 5-40 nm, about 5-30 nm, about 8-30 nm, about 10-30 nm, about 8-25 nm, about 10-25 nm, about 8-20 nm, about 10-15 nm, or about 8-15 nm.

[0339] In some non-limiting examples, at least one particle structure 131 for enhancing transmission of EM signals 731 passing through non-emitting regions 2302 of surface 701 of display panel 710 at a non-zero angle relative to the layers of surface 701. t The resonance given by is the particle structure 131 t The particle size can be adjusted by judicious selection of at least one of the characteristic size, size distribution, shape, surface coverage, composition, dispersion, and / or material of the particles.

[0340] In some non-limiting examples, the resonance can be tuned by varying the deposition thickness of the deposited material 1631.

[0341] In some non-limiting examples, the resonance can be achieved by patterning the EM layer 420 e The thickness can be adjusted by changing the average thickness of the film.

[0342] In some non-limiting examples, the resonance can be tuned by varying the thickness of the at least one coating layer 915. In some non-limiting examples, the thickness of the at least one coating layer 915 can range from 0 nm (corresponding to the absence of the at least one coating layer 915) to 10 nm (corresponding to the absence of the at least one coating layer 915) to 10 nm (corresponding to the absence of the at least one coating layer 915) t The characteristic may range from 0 to 100%.

[0343] In some non-limiting examples, the composition of metals in the deposited material 1631 can be modified to change the deposited grain structure 131 t By changing the dielectric constant of the , the resonance can be tuned.

[0344] In some non-limiting examples, the resonance can be tuned by doping the patterning material 1511 with organic materials having different compositions.

[0345] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the patterning material 1511 to have a particular refractive index and / or a particular extraction coefficient.

[0346] In some non-limiting examples, the resonance can be tuned by selecting and / or modifying the material deposited as at least one cladding layer 915 to have a particular refractive index and / or a particular extinction coefficient. As a non-limiting example, typical organic CPL materials may have refractive indices in the range of about 1.7 to 2.0, while SiON, a material typically used as a TFE material, may have a refractive index in the range of about 1.7 to 2.0. x may have a refractive index that may be greater than about 2.4. x may have a high extinction coefficient that may affect the desired resonance properties.

[0347] Those skilled in the art will appreciate that additional parameters and / or values ​​and / or ranges thereof may prove suitable for tuning the resonance provided by the EM radiation modifying layer 130 to allow transmission of the EM signal 731 passing through the non-emitting region 2302 of the surface 701 of the display panel 710 at a non-zero angle relative to the layers of the surface 701 and / or to enhance absorption of EM radiation, which may be, by way of non-limiting example, visible light, incident on the surface 701 of the display panel 710.

[0348] Those skilled in the art will understand that while particular values ​​and / or ranges of these parameters may be suitable for tuning the resonance provided by the EM radiation modifying layer 130 to enhance the transmission of EM signals 731 passing at a non-zero angle relative to the layers of surface 701 through the non-emitting region 2302 of surface 701 of the display panel 710, other values ​​and ranges of such parameters may be suitable for other purposes beyond enhancing the transmission of EM signals 731, including improving the performance, stability, reliability, and / or lifetime of surface 701, and in some non-limiting examples, depositing a second electrode 1940 on the second portion 602 suitable for its emitting region 910, thereby facilitating the emission of EM radiation.

[0349] Additionally, one of ordinary skill in the art will appreciate that there may be additional parameters and / or values ​​and / or ranges that may be suitable for such other purposes.

[0350] In some non-limiting examples, the vapor flux 1632 of deposition material 1631 incident on the exposed layer surface 11 of face 701 in second portion 602 (i.e., the exposed layer surface 11 of face 701 is in contact with the patterned coating 420 of the EM layer) e The first part 601 is Lateral direction Beyond), EM layer patterning coating 420 e Even if there is no occlusive coating 1240 of the deposition material 1631, there may be some ratio and / or duration where the deposition material 1631 may not form. In such a scenario, the amount of the second portion 602 Lateral directionThe vapor flux 1632 of deposition material 1631 on the exposed layer surface 11 in the discontinuous layer 160 may also include, but is not limited to, at least one grain structure 131 as shown in FIG. 9B. d may be formed thereon.

[0351] FIG. 9B illustrates an example version 900 of the user device 700. b 7 is a simplified block diagram of a display panel 710. b 16, when the vapor flux 1632 of the deposition material 1631 is incident on the exposed layer surface 11, rather than forming a closed coating 1240 as the second electrode 1940 of the second portion 602, the vapor flux 1632 of the deposition material 1631 is formed by forming at least one grain structure 131 as in the surface 701. d A discontinuous layer 160 may be formed in the second portion 602, including at least one grain structure 131. d When electrically coupled, the discontinuous layer 160 can serve as the second electrode 1940 .

[0352] In some non-limiting examples, the characteristic size, size distribution, shape, surface coverage, composition, deposition density, and / or at least one grain structure 131 of the EM radiation modifying layer 130 of the first portion 601 may be t The degree of dispersion of the grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602 is d may differ from that of

[0353] In some non-limiting examples, at least one grain structure 131 of the EM radiation modifying layer 130 of the first portion 601 t The characteristic size of at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602 d The characteristic size may be larger than the characteristic size of the

[0354] In some non-limiting examples, at least one grain structure 131 of the EM radiation-modifying layer 130 in the first portion 601 tThe surface coverage of at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602. d The surface coverage may be greater than 100%.

[0355] In some non-limiting examples, at least one grain structure 131 of the EM radiation modifying layer 130 of the first portion 601 t The deposition density of the second electrode 1940 in the second portion 602 is determined by the density of the at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940. d The deposition density may be greater than that of the

[0356] In some non-limiting examples, at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602 d The characteristic size, size distribution, shape, surface coverage, configuration, deposition density, and / or dispersity of the may be such that they allow for being electrically coupled.

[0357] In some non-limiting examples, at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602 d The characteristic size of at least one grain structure 131 of the EM radiation-modifying layer 130 in the first portion 601 t The characteristic size may be larger than the characteristic size of the

[0358] In some non-limiting examples, at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602 d The surface coverage of at least one grain structure 131 of the EM radiation-modifying layer 130 in the first portion 601 t The surface coverage may be greater than 100%.

[0359] In some non-limiting examples, at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 in the second portion 602 d The deposition density of the at least one grain structure 131 of the EM radiation modifying layer 130 in the first portion 601t The deposition density may be greater than that of the

[0360] In some non-limiting examples, at least one grain structure 131 of the discontinuous layer 160 forming the second electrode 1940 d The EM layer patterned coating 420 in the transition region 925 e It may extend partially over

[0361] FIG. 9C illustrates an example version 900 of the user device 700. c 9B is a simplified block diagram of the display panel 710 of FIG. b Now, the display panel 710 b of Lateral direction At least one TFT structure 901 for driving an emissive region 910 in the second portion 602 of the display panel 710 b of Lateral direction 19. The first electrode 1920 may be co-located with the emissive region 910 in the second portion 602 of the TFT structure 901, and the first electrode 1920 may extend through the TFT insulating layer 909 and be electrically coupled to a terminal of the power source 1905 and / or ground through at least one drive circuit incorporating such at least one TFT structure 901.

[0362] In contrast, the display panel 710 of FIG. c Now, on face 701 Lateral direction There is no TFT structure 901 in the second portion 602 of the display panel 710 that is co-located with the emissive region 910 that it drives. c The first electrode 1920 does not extend through the TFT insulating layer 909 .

[0363] Rather, the display panel 710 c of Lateral direction At least one TFT structure 901 for driving the emissive region 910 in the second portion 602 of the Lateral direction 7. The conductive channel 935 is located elsewhere in the display panel 710 (not shown). c of Lateral directionWithin, beyond the second portion 602, a display panel 710 c 909. In some non-limiting examples, the conductive channel 935 may extend onto the exposed layer surface 11 of the display panel 710, which may be the TFT insulating layer 909. In some non-limiting examples, the conductive channel 935 may extend onto the exposed layer surface 11 of the display panel 710. c of Lateral direction The conductive channel 935 may extend across at least a portion of the first portion 601 of the surface 701. In some non-limiting examples, the conductive channel 935 may have an average thickness that maximizes the transmittance of the EM signal 731 passing therethrough at a non-zero angle relative to the layers of the surface 701. In some non-limiting examples, the conductive channel 935 may be formed from Cu and / or TCO.

[0364] EM layer patterning coating 420 e In order to analyze the characteristics of the EM radiation-modifying layer 130 formed on the exposed layer surface 11 of the silicon dioxide film, a series of samples were prepared after exposing the exposed layer surface 11 to a vapor flux 1632 of Ag.

[0365] The sample was prepared by depositing organic materials onto a silicon (Si) substrate to form an EM layer patterned film 420. e Next, an EM layer patterning film 420 was formed. e The exposed layer surface 11 was subjected to an Ag vapor flux 1632 until a nominal thickness of 8 nm was reached. e Following exposure of the exposed layer surface 11 to the vapor flux 1632, the EM layer patterned coating 420 e Discrete grain structure 131 of Ag on the exposed layer surface 11 t The formation of a discontinuous layer 160 in the form of

[0366] The characteristic of such discontinuous layer 160 is the EM layer patterning coating 420 e Discrete grain structure 131 of Ag deposited on the exposed layer surface 11 of t The particles were characterized by SEM to measure the size of each discrete particle structure. t The average diameter of the EM layer patterned film is 420 eThe surface area occupied by each grain structure 131 is measured when viewed in plan view of the exposed layer surface 11 of the grain structure 131. t The average diameter was calculated by fitting the area occupied by the particles to a circle of equivalent area. An SEM photograph of the sample is shown in Figure 11A, and Figure 11C shows the distribution of average diameters 1110 obtained from this analysis. For comparison, a reference sample was prepared in which 8 nm of Ag was deposited directly on a Si substrate. An SEM micrograph of this reference sample is shown in Figure 11B, and an analysis 1120 of this micrograph is also reflected in Figure 11C.

[0367] As can be seen, the EM layer patterned coating 420 e Discrete Ag grain structure 131 on the exposed layer surface 11 t The median size of the Ag film deposited on the Si substrate in the reference sample was found to be approximately 28 nm, while the median grain size of the Ag film deposited on the Si substrate in the reference sample was found to be approximately 13 nm. The discrete Ag grain structure 131 of the discontinuous layer 160 in the analyzed portion of the sample t EM layer patterned coating 420 e The area percentage of the exposed layer surface 11 of the Si substrate covered by Ag particles in the reference sample was found to be about 22.5%, while the area percentage of the exposed layer surface 11 of the Si substrate covered by Ag particles in the reference sample was found to be about 48.5%.

[0368] Additionally, an EM layer patterning coating 420 e and Ag particle structure 131 t A glass sample was prepared using substantially the same process by depositing a discontinuous layer 160 of 420 on a glass substrate, and this sample (Sample B) was analyzed to determine the effect of the discontinuous layer 160 on the transmittance through the sample. A comparative glass sample was prepared by depositing a discontinuous layer 160 of 420 on a glass substrate. e(Comparative Sample A), and by depositing an 8 nm thick Ag coating directly onto a glass substrate (Comparative Sample C). The transmittance of EM radiation, expressed as a percentage of the intensity of EM radiation detected as EM radiation passes through each sample, was measured at various wavelengths for each sample and is summarized in Table 10 below.

[0369] [Table 10]

[0370] As can be seen, Sample B exhibited a relatively high EM radiation transmittance of about 88% at a wavelength of 850 nm in the NIR spectrum, while exhibiting a relatively low EM radiation transmittance of about 54% at a wavelength of 450 nm in the visible spectrum due to EM radiation absorption caused by the presence of EM radiation modifying layer 130. Because Comparative Sample A exhibited a transmittance of about 90% at a wavelength of 850 nm, it will be understood that the presence of EM radiation modifying layer 130 did not substantially attenuate the transmission of EM radiation, including but not limited to EM signal 731, at such wavelengths. Comparative Sample C exhibited a relatively low transmittance of 30-40% in the visible spectrum and an even lower transmittance at a wavelength of 850 nm in the NIR spectrum compared to Sample B.

[0371] For the purposes of the above analysis, approximately 10 nm on a 500 nm scale 2 and approximately 2.5 nm on a 200 nm scale 2 Small grain structure below the threshold region131 t were ignored because these approached the image resolution.

[0372] Covering layer In some non-limiting examples, the at least one cover layer 915 can be provided in the form of at least one layer of an outcoupling and / or sealing coating of the display panel 710, including, but not limited to, an outcoupling layer, a CPL, a layer of TFE, a polarizing layer, or other physical layers and / or coatings that may be deposited on the display panel 710 as part of the manufacturing process. In some non-limiting examples, the at least one cover layer 915 can include lithium fluoride (LiF).

[0373] In some non-limiting examples, the CPL may be deposited over the entire surface of device 300. The function of the CPL may generally be to increase the outcoupling of light emitted by device 300, thus increasing the external quantum efficiency (EQE).

[0374] In some non-limiting examples, the at least one coating layer 915 may be deposited at least partially over a lateral extent of the surface 701, and in some non-limiting examples, the at least one grain structure 131 of the EM radiation-modifying layer 130 in the first portion 601. t and at least partially covering the exposed layer surface 11 with an EM layer patterned coating 420 e In some non-limiting examples, the at least one covering layer 915 can also at least partially cover the second electrode 1920 in the second portion 602.

[0375] In some non-limiting examples, the at least one coating layer 915 can have a high refractive index. In some non-limiting examples, the at least one coating layer 915 can have a high refractive index. e It may have a refractive index greater than the refractive index of

[0376] In some non-limiting examples, the display panel 710 includes an EM layer patterned coating 420 eAn air gap and / or air interface may be provided at the interface of the EM radiation-modifying coating 120 with the exposed layer surface 11, whether during manufacturing, after manufacturing, and / or during operation. Accordingly, in some non-limiting examples, such air gap and / or air interface may be considered at least one covering layer 915. In some non-limiting examples, the display panel 710 may be provided with both a CPL and an air gap, and the EM radiation-modifying coating 120 may be covered by the CPL, and the air gap may be disposed on or above the CPL.

[0377] In some non-limiting examples, the grain structure 131 of the deposited material 1631 in the EM radiation modifying layer 130 t At least one of the grain structures 131 of the deposited material 1631 in the EM radiation-modifying layer 130 may be in physical contact with the at least one coating layer 915. In some non-limiting examples, the grain structure 131 of the deposited material 1631 in the EM radiation-modifying layer 130 may be in physical contact with the at least one coating layer 915. t Substantially all of the may be in physical contact with at least one cover layer 915.

[0378] Those skilled in the art will appreciate that there may be additional layers introduced at various stages of manufacture that are not shown.

[0379] In some non-limiting examples, grain structure 131 in first portion 601 at the interface between patterning layer 420, which includes patterning material 1511 having a low refractive index, and at least one coating layer 915, including, but not limited to, a CPL, which includes a material that may have a high refractive index. t The thin scattered EM radiation modifying layer 130 may enhance outcoupling of at least one EM signal 731 passing through a signal transmissive region 820 of the face 701 of the display panel 710 at a non-zero angle relative to the layers of the face 701 .

[0380] Patterning Those skilled in the art will appreciate that further details of using patterned coating 420 to pattern deposited material 1631 (whether for purposes of forming EM radiation-modifying layer 130 or not) are described herein.

[0381] In some non-limiting examples, in first portion 601, patterned coating 420, which in some non-limiting examples may be a NIC, includes patterning material 1511, which in some non-limiting examples may be a NIC material, and may be selectively deposited as a closure coating 1240 only in first portion 601 onto exposed layer surface 11 of the underlying layer, including but not limited to, substrate 10 of device 100. However, in second portion 602, exposed layer surface 11 of the underlying layer may be substantially devoid of closure coating 1240 of patterning material 1511.

[0382] Patterned Coating 12 is a cross-sectional view of a layered semiconductor device 1200, of which device 100 may be, in some non-limiting examples. Patterned film 420 may include patterning material 1511. In some non-limiting examples, patterned film 420 may include a closure film 1240 of patterning material 1511.

[0383] The patterned coating 420 can provide an exposed layer surface 11 with a relatively small initial adhesion probability against deposition of the deposition material 1631 (in some non-limiting examples, under conditions identified in the dual QCM technique described by Walker et al.), which, in some non-limiting examples, may be substantially smaller than the initial adhesion probability against deposition of the deposition material 1631 of the exposed layer surface 11 of the underlying layer of the device 1200 on which the patterned coating 420 is deposited.

[0384] Due to the low initial adhesion probability of the patterned film 420 and / or patterning material 1511, in some non-limiting examples, when deposited as a film and / or a film within a feature, under conditions similar to the deposition of the patterned film 420 within device 1200, the first portion 601 including the patterned film 420 may be substantially devoid of a closed film 1240 of the deposited material 1631, which resists the deposition of the deposited material 1631.

[0385] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, may have an initial adhesion probability against deposition of the deposition material 1631 that is less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001.

[0386] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, may have an initial sticking probability against Ag and / or Mg deposition that is less than or equal to at least one of about 0.9, about 0.3, about 0.2, about 0.15, about 0.1, about 0.08, about 0.05, about 0.03, about 0.02, about 0.01, about 0.008, about 0.005, about 0.003, about 0.001, about 0.0008, about 0.0005, about 0.0003, or about 0.0001.

[0387] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, may have a viscosity of about 0.15 to 0.0001, about 0.1 to 0.0003, about 0.08 to about 0.0005, about 0.08 to 0.00 008, approximately 0.05 to 0.001, approximately 0.03 to 0.0001, approximately 0.03 to 0.0003, approximately 0.03 to 0.0005, approximately 0.03 to 0.0008, approximately 0.03 to 0.001, approximately 0.03 to 0.005, approximately 0.03 to 0.008, approximately 0.03 to 0.01, approximately 0.02 to 0.0001, approximately 0.02 to 0.0003, approximately 0.02 to 0.0005, approximately 0.02 to 0.00 08, approx. 0.02 to 0.001, approx. 0.02 to 0.005, approx. 0.02 to 0.008, approx. 0.02 to 0.01, approx. 0.01 to 0.0001, approx. 0.01 to 0.0003, approx. 0.01 to 0.0005, approx. 0.01 to 0.0008, approx. 0.01 to 0.001, approx. 0.01 to 0.005, approx. 0.01 to 0.008, approx. 0.008 to 0.0001, approx. 0.008 to 0.000 3, about 0.008-0.0005, about 0.008-0.0008, about 0.008-0.001, about 0.008-0.005, about 0.005-0.0001, about 0.005-0.0003, about 0.005-0.0005, about 0.005-0.0008, or about 0.005-0.001.

[0388] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, in some non-limiting examples, when deposited as a film and / or some form of coating and under circumstances similar to the deposition of the patterned film 420 in device 1200, can have an initial sticking probability against deposition of the plurality of deposition materials 1631 that is less than or equal to a threshold value. In some non-limiting examples, such a threshold value can be at least one of approximately 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, or 0.001.

[0389] In some non-limiting examples, patterned film 420 and / or patterning material 1511, in some non-limiting examples, when deposited as a film and / or some form of coating and under circumstances similar to the deposition of patterned film 420 in device 1200, can have an initial sticking probability that is below such a threshold that resists deposition of a plurality of deposition materials 1631 selected from at least one of Ag, Mg, Yb, cadmium (Cd), and zinc (Zn). In some further non-limiting examples, patterned film 420 can exhibit an initial sticking probability that is below such a threshold that resists deposition of a plurality of deposition materials 1631 selected from at least one of Ag, Mg, and Yb.

[0390] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited, in some non-limiting examples, as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, can exhibit an initial sticking probability that resists deposition of the first deposition material 1631 below a first threshold and an initial sticking probability that resists deposition of the second deposition material 1631 below a second threshold. In some non-limiting examples, the first deposition material 1631 can be Ag and the second deposition material 1631 can be Mg. In some other non-limiting examples, the first deposition material 1631 can be Ag and the second deposition material 1631 can be Yb. In some other non-limiting examples, the first deposition material 1631 can be Yb and the second deposition material 1631 can be Mg. In some non-limiting examples, the first threshold may be greater than the second threshold.

[0391] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, may have a transmittance to EM radiation of at least a threshold transmittance value after being subjected to a vapor flux 1632 of deposition material 1631 (FIG. 16), including, but not limited to, Ag.

[0392] In some non-limiting examples, such transmittance may be measured after exposing the exposed layer surface 11 of the patterned coating 420 and / or patterned material 1511, which is formed as a thin film under typical conditions that may be used to deposit an electrode of an optoelectronic device, which may be the cathode of an OLED device, to a vapor flux 1632 of a deposition material 1631, including, but not limited to, Ag.

[0393] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to a vapor flux 1632 of a deposition material 1631, including but not limited to Ag, include (i) a temperature of about 10 -4 Torr or 10 -5 Torr vacuum pressure, (ii) a vapor flux 1632 of deposition material 1631, including but not limited to Ag, that substantially corresponds to a reference deposition rate of about 1 angstrom (Å) / second, which may be monitored and / or measured using a QCM, as a non-limiting example, and (iii) the exposed layer surface 11 being subjected to the vapor flux 1632 of deposition material 1631, including but not limited to Ag, until a reference average layer thickness of about 15 nm is reached, and once such reference average layer thickness is achieved, the exposed layer surface 11 is not further subjected to the vapor flux 1632 of deposition material 1631, including but not limited to Ag.

[0394] In some non-limiting examples, the exposed layer surface 11 subjected to the vapor flux 1632 of the deposition material 1631, including but not limited to Ag, can be substantially at room temperature (e.g., about 25° C.). In some non-limiting examples, the exposed layer surface 11 subjected to the vapor flux 1632 of the deposition material 1631, including but not limited to Ag, can be positioned about 65 cm away from an evaporation source that evaporates the deposition material 1631, including but not limited to Ag.

[0395] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 460 nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the IR and / or NIR spectrum. As a non-limiting example, the threshold transmittance value may be measured at a wavelength of about 700 nm, 900 nm, or about 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that can be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least one of about 60%, 65%, 70%, 75%, 80%, 85%, or 90%.

[0396] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the patterned film 420 and / or patterned material 1511, in some non-limiting examples, when deposited as a film and / or some form of film and under conditions similar to the deposition of the patterned film 420 in device 1200, and the average layer thickness of the deposited material 1631 thereon.

[0397] Those skilled in the art will appreciate that a high transmittance may generally indicate the absence of a closed coat 1240 of the deposited material 1631, which may be Ag as a non-limiting example. On the other hand, a thin metal film, particularly when formed as the closed coat 1240, may exhibit a high degree of absorption of EM radiation, so a low transmittance may generally indicate the presence of a closed coat 1240 of the deposited material 1631, including, but not limited to, Ag, Mg, and / or Yb.

[0398] It may further be hypothesized that an exposed layer surface 11 that exhibits a low initial sticking probability to deposited materials 1631, including but not limited to Ag, Mg, and / or Yb, may exhibit high permeability. On the other hand, an exposed layer surface 11 that exhibits a high sticking probability to deposited materials 1631, including but not limited to Ag, Mg, and / or Yb, may exhibit low permeability.

[0399] A series of samples were prepared to measure the transmittance of exemplary materials and to visually observe whether a closed coating 1240 of Ag formed on the exposed layer surface 11 of such example materials. Each sample was prepared by depositing an approximately 50 nm thick coating of the exemplary material on a glass substrate and then subjecting the exposed layer surface 11 of the coating to an Ag vapor flux 1632 at a rate of approximately 1 Å / sec until a nominal layer thickness of approximately 15 nm was reached. Each sample was then visually analyzed, and the transmittance through each sample was measured.

[0400] The molecular structures of exemplary materials used in the samples herein are set forth in Table 11 below.

[0401] [Table 11-1]

[0402] [Table 11-2]

[0403] [Table 11-3]

[0404] Samples that had formed a substantially occlusive coating 1240 of Ag were visually identified, and the presence of such a coating in these samples was further confirmed by measuring the transmittance through them, which showed transmittance of about 50% or less at a wavelength of about 460 nm.

[0405] Samples were also identified in which no occlusive coating of Ag 1240 had formed, and the absence of such a coating in these samples was further confirmed by measurements of the transmittance through them, which showed a transmittance of greater than about 70% at a wavelength of about 460 nm.

[0406] The results are summarized in Table 12 below.

[0407] [Table 12]

[0408] Based on the above, it has been found that the materials used in the first seven samples (HT211 to Exemplary Material 2) in Tables 11 and 12 may not be well suited to inhibiting deposition of deposition materials 1631 thereon, including, but not limited to, Ag and / or Ag-containing materials.

[0409] On the other hand, it has been found that exemplary material 3 through exemplary material 9 may be suitable, at least in some non-limiting applications, to function as a patterned coating 420 to inhibit the deposition of deposition material 1631, including, but not limited to, Ag and / or Ag-containing materials.

[0410] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, can have a surface energy of less than or equal to at least one of about 24 dynes / cm, about 22 dynes / cm, about 20 dynes / cm, about 18 dynes / cm, about 16 dynes / cm, about 15 dynes / cm, about 13 dynes / cm, about 12 dynes / cm, or about 11 dynes / cm.

[0411] In some non-limiting examples, the surface energy can be at least one of about 6 dynes / cm, 7 dynes / cm, or 8 dynes / cm.

[0412] In some non-limiting examples, the surface energy can be at least one of about 10-20 dynes / cm, or 13-19 dynes / cm.

[0413] In some non-limiting examples, the critical surface tension of a surface can be determined according to the Zisman method, as further detailed in W. A. ​​Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0414] By way of non-limiting example, a series of samples were prepared to measure the critical surface tension of surfaces formed by various materials, and the results are summarized in Table 13 below.

[0415] [Table 13]

[0416] Based on the above-described measurements of critical surface tensions in Table 13 and previous observations regarding the presence or absence of a substantially occlusive coating 1240 of Ag, it has been found that a material that forms a low surface energy surface when deposited as a coating may be a material having at least one critical surface tension of, by way of non-limiting example, about 13-20 dynes / cm, or about 13-19 dynes / cm, and may be suitable for inhibiting the deposition of deposition materials 1631, including, but not limited to, Ag and / or Ag-containing materials, thereon to form a patterned coating 420.

[0417] Without being bound by any particular theory, it can be hypothesized, by way of non-limiting example, that materials that form surfaces having surface energies lower than about 13 dynes / cm may be less suitable as patterning material 1511 in certain applications because such materials may exhibit relatively low adhesion to layers surrounding them, exhibit low melting points, and / or exhibit low sublimation temperatures.

[0418] In some non-limiting examples, the patterned film 420 and / or the patterned material 1511 may have a low refractive index when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in the device 1200.

[0419] In some non-limiting examples, the patterned coating 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned coating 420 in device 1200, can have a refractive index for EM radiation at a wavelength of 550 nm that can be less than or equal to at least one of about 1.55, about 1.5, about 1.45, about 1.43, about 1.4, about 1.39, about 1.37, about 1.35, about 1.32, or about 1.3.

[0420] Without wishing to be bound by any particular theory, it has been observed that providing a patterned coating 420 with a low refractive index can enhance the transmission of external EM radiation through its second portion 602 in at least some devices 1200. As a non-limiting example, a device 1200 including air gaps therein, which may be disposed near or adjacent to a patterned coating 420, can exhibit a higher transmission rate when the patterned coating 420 has a low refractive index compared to a similarly configured device that was not provided with such a low refractive index patterned coating 420.

[0421] By way of non-limiting example, a series of samples were prepared to measure the refractive index at a wavelength of 550 nm of coatings formed from some of the various exemplary materials, and the results are summarized in Table 14 below.

[0422] [Table 14]

[0423] Based on the foregoing measurements of refractive index in Table 14 and previous observations regarding the presence or absence of a substantially occlusive coating 1240 of Ag in Table 12, it has been found that a material that forms a low refractive index coating may be a material having a refractive index less than or equal to at least one of, by way of non-limiting example, about 1.4 or 1.38, and may be suitable for inhibiting the deposition of deposition material 1631, including, but not limited to, Ag and / or Ag-containing materials, thereon to form patterned coating 420.

[0424] In some non-limiting examples, the patterned coating 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned coating 420 in device 1200, can have an extinction coefficient that can be about 0.01 or less for photons at wavelengths that are at least one of about 600 nm, about 500 nm, about 460 nm, about 420 nm, or about 410 nm.

[0425] In some non-limiting examples, patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of patterned film 420 in device 1200, may not substantially attenuate EM radiation passing therethrough, at least in the visible spectrum.

[0426] In some non-limiting examples, patterned coating 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of patterned coating 420 in device 1200, may not substantially attenuate EM radiation passing therethrough, at least in the IR and / or NIR spectrum.

[0427] In some non-limiting examples, the patterned coating 420 and / or patterning material 1511, in some non-limiting examples, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned coating 420 in device 1200, can have an extinction coefficient for EM radiation at wavelengths shorter than at least one of at least about 400 nm, about 390 nm, about 380 nm, or about 370 nm that can be at least one of about 0.05, about 0.1, about 0.2, or about 0.5.

[0428] In this manner, patterned coating 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of patterned coating 420 in device 1200, can absorb EM radiation in the UVA spectrum incident on device 1200, thereby reducing the likelihood that EM radiation in the UVA spectrum can have undesirable effects on device performance, device stability, device reliability, and / or device lifetime.

[0429] In some non-limiting examples, the patterned film 420 and / or patterning material 1511, when deposited as a film and / or some form of coating and under conditions similar to the deposition of the patterned film 420 in device 1200, can have a glass transition temperature that is less than or equal to at least one of about 300°C, about 150°C, about 130°C, about 30°C, about 0°C, about -30°C, or about -50°C.

[0430] In some non-limiting examples, patterning material 1511 can have a sublimation temperature of at least one of about 100-320° C., about 120-300° C., about 140-280° C., or about 150-250° C. In some non-limiting examples, such a sublimation temperature can allow patterning material 1511 to be readily deposited as a film using PVD.

[0431] The sublimation temperature of a material can be determined using a variety of methods apparent to those skilled in the relevant art, including heating the material in a crucible under high vacuum; Observing the onset of material deposition on the surface on a QCM mounted at a fixed distance from the crucible; Observing a specific deposition rate onto the surface on a QCM mounted at a fixed distance from the crucible, for example, 0.1 Å / sec; and / or As a non-limiting example, about 10 -4 or 10 -5 These include, but are not limited to, determining the temperature that can be achieved to reach the material's threshold vapor pressure in Torr.

[0432] In some non-limiting examples, the sublimation temperature of the material can be increased in a high vacuum environment (for non-limiting examples, about 10 -4 This can be determined by heating the material in an evaporation source at temperatures below 1000 .ANG. / s (Torr) and determining the temperature that can be reached to evaporate the material, so that, as a non-limiting example, a vapor flux sufficient to cause deposition of the material onto a surface on a QCM mounted a fixed distance from the source is generated at a deposition rate of about 0.1 .ANG. / s.

[0433] In some non-limiting examples, the QCM can be mounted approximately 65 cm from the crucible for purposes of determining the sublimation temperature.

[0434] In some non-limiting examples, patterning film 420 and / or patterning material 1511 can include fluorine (F) atoms and / or Si atoms. As a non-limiting example, patterning material 1511 for forming patterning film 420 can be a compound including F and / or Si.

[0435] In some non-limiting examples, patterning material 1511 can include a compound containing F. In some non-limiting examples, patterning material 1511 can include a compound containing F and carbon (C) atoms. In some non-limiting examples, patterning material 1511 can include a compound containing F and C in an atomic ratio corresponding to a quotient F / C of at least one of at least about 1, 1.5, or 2. In some non-limiting examples, the atomic ratio of F to C counts all of the F atoms present in the compound structure, and for the C atoms, counts only the sp atoms present in the compound structure. 3 It can be determined by counting only the hybridized C atoms. In some non-limiting examples, patterning material 1511 can include a compound that includes, as part of its molecular substructure, a moiety that includes F and C in an atomic ratio corresponding to a quotient F / C of at least about 1, 1.5, or 2.

[0436] In some non-limiting examples, the compound of patterning material 1511 can include an organic-inorganic hybrid material.

[0437] In some non-limiting examples, patterning material 1511 may be or include an oligomer.

[0438] In some non-limiting examples, patterning material 1511 may be or may include a compound having a molecular structure containing a backbone and at least one functional group attached to the backbone, in some non-limiting examples, the backbone may be an inorganic moiety and the at least one functional group may be an organic moiety.

[0439] In some non-limiting examples, such compounds can have molecular structures that include siloxane groups. In some non-limiting examples, the siloxane groups can be linear, branched, or cyclic siloxane groups. In some non-limiting examples, the backbone can be or include siloxane groups. In some non-limiting examples, the backbone can be or include siloxane groups and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F can be a fluoroalkyl group. Non-limiting examples of such compounds include fluorosiloxanes. Non-limiting examples of such compounds are Exemplary Material 6 and Exemplary Material 9.

[0440] In some non-limiting examples, the compound can have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group can be a POSS. In some non-limiting examples, the backbone can be or include a silsesquioxane group. In some non-limiting examples, the backbone can be or include a silsesquioxane group and at least one functional group including F. In some non-limiting examples, the at least one functional group including F can be a fluoroalkyl group. Non-limiting examples of such compounds include fluoro-silsesquioxane and / or fluoro-POSS. A non-limiting example of such a compound is Exemplary Material 8.

[0441] In some non-limiting examples, the compound may have a molecular structure including a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be phenyl or naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be replaced by a heteroatom (which may be, for non-limiting examples, O, N, and / or S) to derive a heteroaryl group. In some non-limiting examples, the backbone may be or may include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group. In some non-limiting examples, the backbone may be or may include a substituted or unsubstituted aryl group and / or a substituted or unsubstituted heteroaryl group, and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group.

[0442] In some non-limiting examples, the compounds may have molecular structures that include substituted or unsubstituted linear, branched, or cyclic hydrocarbon groups. In some non-limiting examples, one or more C atoms of the hydrocarbon group may be replaced by a heteroatom, which may be, by way of non-limiting example, O, N, and / or S.

[0443] In some non-limiting examples, the compound can have a molecular structure that includes a phosphazene group. In some non-limiting examples, the phosphazene group can be a linear, branched, or cyclic phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group. In some non-limiting examples, the backbone can be or include a phosphazene group and at least one functional group that includes F. In some non-limiting examples, the at least one functional group that includes F can be a fluoroalkyl group. Non-limiting examples of such compounds include fluorophosphazenes. A non-limiting example of such a compound is Exemplary Material 4.

[0444] In some non-limiting examples, the compound can be a fluoropolymer. In some non-limiting examples, the compound can be a block copolymer comprising F. In some non-limiting examples, the compound can be an oligomer. In some non-limiting examples, the oligomer can be a fluoro-oligomer. In some non-limiting examples, the compound can be a block oligomer comprising F. Non-limiting examples of fluoropolymers and / or fluoro-oligomers are those having the molecular structure of Exemplary Material 3, Exemplary Material 5, and / or Exemplary Material 7.

[0445] In some non-limiting examples, the compound can be a metal complex. In some non-limiting examples, the metal complex can be an organometallic complex. In some non-limiting examples, the organometallic complex can include F. In some non-limiting examples, the organometallic complex can include at least one ligand that includes F. In some non-limiting examples, the at least one ligand that includes F can be or include a fluoroalkyl group.

[0446] In some non-limiting examples, patterning material 1511 can be or include an organic-inorganic hybrid material.

[0447] In some non-limiting examples, patterning material 1511 can include multiple different materials.

[0448] In some non-limiting examples, the molecular weight of the compound of patterning material 1511 can be less than or equal to at least one of about 5,000 g / mol, about 4,500 g / mol, about 4,000 g / mol, about 3,800 g / mol, or about 3,500 g / mol.

[0449] In some non-limiting examples, the molecular weight of the compound of patterning material 1511 can be at least one of about 1,500 g / mol, about 1,700 g / mol, about 2,000 g / mol, about 2,200 g / mol, and about 2,500 g / mol.

[0450] Without wishing to be bound by any particular theory, it can be hypothesized that for compounds adapted to form surfaces having relatively low surface energy, at least in some applications, the molecular weight of such compounds may be aimed for to be at least one of about 1,500-5,000 g / mol, 1,500-4,500 g / mol, 1,700-4,500 g / mol, 2,000-4,000 g / mol, 2,200-4,000 g / mol, or 2,500-3,800 g / mol.

[0451] Without wishing to be bound by any particular theory, it can be hypothesized that such compounds may exhibit at least one property that may be suitable for forming films and / or layers having a substantially amorphous structure when deposited using, as a non-limiting example, a relatively high melting point of at least 100°C, (ii) a relatively low surface energy, and / or (iii) as a non-limiting example, a vacuum-based thermal evaporation process.

[0452] In some non-limiting examples, the percentage of the molar weight of such compounds that can be attributed to the presence of F atoms can be at least one of about 40-90%, 45-85%, 50-80%, 55-75%, or 60-75%. In some non-limiting examples, the F atoms can constitute a majority of the molar weight of such compounds.

[0453] In some non-limiting examples, the patterned coating 420 may be disposed in a pattern that may be defined by at least one region therein that may be substantially devoid of the closure coating 1240 of the patterned coating 420. In some non-limiting examples, the at least one region may separate the patterned coating 420 into a plurality of individual pieces thereof. In some non-limiting examples, the plurality of individual pieces of the patterned coating 420 may be separated into a plurality of individual pieces thereof. Lateral directionIn some non-limiting examples, the plurality of individual pieces of patterned coating 420 may be arranged in an ordered structure, including, but not limited to, an array or matrix, such that, in some non-limiting examples, the individual pieces of patterned coating 420 may be arranged in a repeating pattern.

[0454] In some non-limiting examples, at least one of the plurality of individual segments of patterned coating 420 may each correspond to an emissive region 910 .

[0455] In some non-limiting examples, the aperture ratio of the emitting region 910 can be less than or equal to at least one of about 50%, about 40%, about 30%, or about 20%.

[0456] In some non-limiting examples, the patterned coating 420 can be formed as a single monolithic coating.

[0457] In some non-limiting examples, the patterned coating 420 can have and / or provide at least one nucleation site for the deposition material 1631 due to, but not limited to, the patterning material 1511 used and / or the deposition environment.

[0458] In some non-limiting examples, the patterned coating 420 may be doped, coated, and / or supplemented with another material that can function as a seed or inhomogeneity to serve as such nucleation sites for the deposited material 1631. In some non-limiting examples, such other material may include NPC 1820 material. In some non-limiting examples, such other material may include, by way of non-limiting example, organic materials such as polycyclic aromatic compounds and / or materials containing non-metallic elements such as, but not limited to, at least one of O, S, N, or C, the presence of which may otherwise be contaminants in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a fraction of a monolayer to avoid forming a closure coating 1240 thereof. Rather, monomers of such other material may be deposited in a layer thickness that is a fraction of a monolayer to form individual nucleation sites for the deposited material. Lateral direction There may be a tendency for the distances to be spaced apart.

[0459] In some non-limiting examples, the patterned coating 420 can function as an optical coating. In some non-limiting examples, the patterned coating 420 can modify at least one property and / or characteristic of the EM radiation (including, but not limited to, the form of photons) emitted by the device 1200. In some non-limiting examples, the patterned coating 420 can exhibit a degree of haze to scatter the emitted EM radiation. In some non-limiting examples, the patterned coating 420 can include a crystalline material to scatter EM radiation transmitted therethrough. Such scattering of EM radiation can, in some non-limiting examples, facilitate enhanced outcoupling of EM radiation from the device 1200. In some non-limiting examples, the patterned coating 420 can initially be deposited as a substantially amorphous coating, including, but not limited to, a substantially amorphous coating, whereupon, after its deposition, the patterned coating 420 can be crystallized and then serve as an optical coupling.

[0460] In some non-limiting examples, materials suitable for use as the patterned coating 420 may generally have low surface energy when deposited as a thin film or coating on a surface. In some non-limiting examples, materials with low surface energy may exhibit low intermolecular forces. In some non-limiting examples, materials with low intermolecular forces may exhibit a low melting point. In some non-limiting examples, materials with low melting points may not be suitable for use in some applications requiring high-temperature reliability up to at least one of approximately 60°C, 85°C, or 100°C, by way of non-limiting example, due to changes in the physical properties of the coating or material at operating temperatures approaching the material's melting point. As a non-limiting example, a material with a melting point of 120°C may not be suitable for applications where high-temperature reliability up to 100°C is a priority. Thus, materials with higher melting points may be suitable for some applications requiring at least high-temperature reliability. Without wishing to be bound by any particular theory, it is hypothesized herein that materials with relatively high surface energy may be suitable for some applications requiring at least high-temperature reliability.

[0461] In some non-limiting examples, materials with low intermolecular forces may exhibit low sublimation temperatures. In some non-limiting examples, materials with low sublimation temperatures may not be suitable for manufacturing processes requiring a high degree of control over the layer thickness of the deposited film of the material. As a non-limiting example, for materials with sublimation temperatures below about 140°C, about 120°C, about 110°C, about 100°C, or about 90°C, it may be difficult to control the deposition rate and layer thickness of films deposited using vacuum thermal evaporation or other methods in the art. In some non-limiting examples, materials with higher sublimation temperatures may be suitable for at least some applications requiring a high degree of control over film thickness. Without wishing to be bound by any particular theory, it may be hypothesized herein that materials with relatively high surface energies may be suitable for at least some applications requiring a high degree of control over film thickness.

[0462] In general, materials with low surface energy may exhibit a large or wide optical gap, which may correspond, by way of non-limiting example, to the HOMO-LUMO gap of the material. At least some materials with large or wide optical gaps and / or HOMO-LUMO gaps may exhibit relatively weak or no photoluminescence in the visible spectrum, its deep blue region, and / or the near-UV spectrum. As a non-limiting example, such materials may exhibit limited photoluminescence when subjected to EM radiation having a wavelength of approximately 365 nm, a common wavelength of radiation sources used in fluorescence microscopy. The presence of such materials may be difficult to detect using standard optical detection techniques, such as fluorescence microscopy, because the materials exhibit limited photoluminescence, especially when deposited as thin films. This may pose challenges for applications in which materials are selectively deposited over portions of the substrate 10, for example, through FMM, with the goal of determining the portions where such materials are present following deposition of the materials. In some non-limiting examples, materials with relatively small HOMO-LUMO gaps may be suitable for applications in which films of materials are detected using optical techniques. In some non-limiting examples, materials with higher surface energies may be suitable for applications in which films of materials are detected using optical techniques.

[0463] In some non-limiting examples, the goal may be to provide a patterned coating 420 to cause the formation of a discontinuous layer 160 of at least one grain structure 131 when the patterned coating 420 is subjected to a vapor flux 1632 of deposition material 1631. In at least some applications, the patterned coating 420 may exhibit a sufficiently low initial sticking probability such that a discontinuous layer 160 of at least one grain structure 131 having at least one characteristic may form in the first portion 601 on the patterned coating 420, while a closure coating 1240 of the deposition material 1631 may form in the second portion 602, which may be substantially devoid of the patterned coating 420. In some non-limiting examples, the goal may be to form a discontinuous layer 160 of at least one grain structure 131 of deposition material 1631, which may be a metal or metal alloy, for example, while depositing a closure coat 1240 of deposition material 1631 having a thickness of at least one of about 100 nm, about 50 nm, about 25 nm, or about 15 nm or less in the second portion 602. In some non-limiting examples, the relative amount of deposition material 1631 deposited as the discontinuous layer 160 of the at least one grain structure 131 in the first portion 601 may correspond to at least one of about 1-50%, about 2-25%, about 5-20%, or about 7-10% of the amount of deposition material 1631 deposited as the closure coat 1240 in the second portion 602, and may correspond to a thickness of at least one of about 100 nm, about 75 nm, about 50 nm, about 25 nm, or about 15 nm or less, for example, without limitation.

[0464] Without wishing to be bound by any particular theory, it has been found that a patterned film 420 containing a material that exhibits a relatively high surface energy when deposited as a thin film can, in some non-limiting examples, form a discontinuous layer 160 of at least one grain structure 131 of the deposited material 1631 in the first portion 601 and a closed film 1240 of the deposited material 1631 in the second portion 602 when the thickness of the closed film is, by way of non-limiting example, less than or equal to at least one of about 100 nm, about 75 nm, about 50 nm, about 25 nm, or about 15 nm.

[0465] In some non-limiting examples, the patterned coating 420 can include multiple materials. In some non-limiting examples, the patterned coating 420 can include a first material and a second material.

[0466] In some non-limiting examples, at least one of the materials of patterned coating 420 can serve as a NIC when deposited as a thin film.

[0467] In some non-limiting examples, at least one of the materials of patterned coating 420 may serve as a NIC when deposited as a film, and another material may form NPC 1820 when deposited as a thin film. In some non-limiting examples, a first material may form NPC 1820 when deposited as a thin film, and a second material may form a NIC when deposited as a thin film. In some non-limiting examples, the presence of a first material in patterned coating 420 may result in an increased initial adhesion probability compared to when patterned coating 420 is formed from the second material and is substantially devoid of the first material.

[0468] In some non-limiting examples, at least one of the materials of patterned coating 420 can be adapted to form a surface having a low surface energy when deposited as a thin film. In some non-limiting examples, a first material can be adapted to form a surface having a lower surface energy when deposited as a thin film than a surface provided by a thin film including a second material.

[0469] In some non-limiting examples, patterned coating 420 may exhibit photoluminescence, including but not limited to including a material that exhibits photoluminescence.

[0470] In some non-limiting examples, the patterned coating 420 may exhibit photoluminescence at wavelengths corresponding to the UV spectrum and / or the visible spectrum. In some non-limiting examples, the photoluminescence may occur at wavelengths (ranges) corresponding to the UV spectrum, including but not limited to the UVA spectrum and / or the UVB spectrum. In some non-limiting examples, the photoluminescence may occur at wavelengths (ranges) corresponding to the visible spectrum. In some non-limiting examples, the photoluminescence may occur at wavelengths (ranges) corresponding to deep blue or near UV.

[0471] In some non-limiting examples, the first material can have a first optical gap and the second material can have a second optical gap. In some non-limiting examples, the second optical gap can be larger than the first optical gap. In some non-limiting examples, the difference between the first and second optical gaps can be greater than at least one of approximately 0.3 eV, 0.5 eV, 0.7 eV, 1 eV, 1.3 eV, 1.5 eV, 1.7 eV, 2 eV, 2.5 eV, and / or 3 eV.

[0472] In some non-limiting examples, the first optical gap may be less than or equal to at least one of about 4.1 eV, 3.5 eV, or 3.4 eV, and in some non-limiting examples, the second optical gap may be greater than at least one of about 3.4 eV, about 3.5 eV, about 4.1 eV, about 5 eV, or about 6.2 eV.

[0473] In some non-limiting examples, the first optical gap and / or the second optical gap may correspond to a HOMO-LUMO gap.

[0474] In some non-limiting examples, the first material may exhibit photoluminescence at wavelengths corresponding to the UV spectrum and / or the visible spectrum. In some non-limiting examples, the photoluminescence may occur at wavelengths corresponding to the UV spectrum, including but not limited to the UVA spectrum and / or the UVB spectrum. In some non-limiting examples, the photoluminescence may occur at wavelengths corresponding to the visible spectrum. In some non-limiting examples, the photoluminescence may occur at wavelengths corresponding to the deep B (blue) region of the visible spectrum.

[0475] In some non-limiting examples, the first material may exhibit photoluminescence at wavelengths corresponding to the visible spectrum, and the second material may not exhibit substantial photoluminescence at any wavelengths corresponding to the visible spectrum.

[0476] In some non-limiting examples, at least one of the materials of the patterned coating 420 that can exhibit photoluminescence can include at least one of a conjugated bond, an aryl moiety, a donor-acceptor group, or a heavy metal complex.

[0477] As a non-limiting example, photoluminescence of a coating and / or material can be observed through a photoexcitation process. In a photoexcitation process, the coating and / or material can be subjected to EM radiation emitted by a source, including, but not limited to, a UV lamp. When the emitted EM radiation is absorbed by the coating and / or material, its electrons can be temporarily excited. Following the excitation, at least one relaxation process, including, but not limited to, fluorescence and / or phosphorescence, can occur, in which EM radiation can be emitted from the coating and / or material. The EM radiation emitted from the coating and / or material during such a process can be detected, for example, by a photodetector, to characterize the photoluminescence properties of the coating and / or material. As used herein, the wavelength of photoluminescence with respect to a coating and / or material can generally refer to the wavelength of EM radiation emitted by such coating and / or material as a result of relaxation of electrons from an excited state. As will be understood by those skilled in the art, the wavelength of light emitted by a coating and / or material as a result of the photoexcitation process may, in some non-limiting examples, be longer than the wavelength of the radiation used to initiate the photoexcitation. Photoluminescence may be detected and / or characterized using various techniques known in the art, including, but not limited to, fluorescence microscopy. As used herein, a photoluminescent coating or material may exhibit photoluminescence at a wavelength when irradiated with excitation radiation of a particular wavelength. In some non-limiting examples, a photoluminescent coating or material may exhibit photoluminescence at wavelengths greater than about 365 nm when irradiated with excitation radiation having a wavelength of 365 nm. Photoluminescent coatings may be detected on substrate 10 using standard optical techniques, including, but not limited to, fluorescence microscopy, which may quantify, measure, and / or investigate the presence of such coatings or materials.

[0478] In some non-limiting examples, the optical gaps of the various coatings and / or materials, including but not limited to the first optical gap and / or the second optical gap, may correspond to the energy gaps of the coatings and / or materials where EM radiation is absorbed or emitted during the photoexcitation process.

[0479] In some non-limiting examples, photoluminescence can be detected and / or characterized by subjecting the coating and / or material to EM radiation having a wavelength corresponding to the UV spectrum, including but not limited to the UVA spectrum or the UVB spectrum. In some non-limiting examples, the EM radiation for initiating photoexcitation can have a wavelength of about 365 nm.

[0480] In some non-limiting examples, the second material may exhibit substantially no photoluminescence at any wavelength corresponding to the visible spectrum. In some non-limiting examples, the second material may exhibit no photoluminescence when subjected to EM radiation having a wavelength of at least one of about 300 nm, about 320 nm, about 350 nm, or about 365 nm. In some non-limiting examples, the second material may exhibit little and / or no detectable absorption when subjected to such EM radiation. In some non-limiting examples, the second optical gap of the second material may be wider than the photon energy of the EM radiation emitted by the source such that the second material does not undergo photoexcitation when subjected to such EM radiation. However, in some non-limiting examples, a patterned coating 420 containing such a second material may nevertheless exhibit photoluminescence when subjected to EM radiation because the first material exhibits photoluminescence. In some non-limiting examples, the presence of patterned coating 420 may be detected and / or observed using routine characterization techniques, such as fluorescence microscopy, during deposition of patterned coating 420.

[0481] In some non-limiting examples, the concentration of the first material in the patterned coating 420 can be equal to or less than the concentration of the second material in the patterned coating 420, including but not limited to, by concentration. In some non-limiting examples, the patterned coating 420 can include at least about 0.1%, about 0.2%, about 0.5%, about 0.8%, about 1%, about 3%, about 5%, about 8%, about 10%, about 15%, or about 20% by weight of at least one of the first materials. In some non-limiting examples, the patterned coating 420 can include no more than about 50%, about 40%, about 30%, about 25%, about 20%, about 15%, about 10%, about 8%, about 5%, about 3%, or about 1% by weight of at least one of the first materials. In some non-limiting examples, the remainder of patterned coating 420 can consist substantially of the second material. In some non-limiting examples, patterned coating 420 can include additional materials, including but not limited to a third material and / or a fourth material.

[0482] In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the first material and / or the second material, can include at least one of F and Si. As a non-limiting example, at least one of the first material and the second material can include at least one of F and Si. In some further non-limiting examples, the first material can include F and / or Si, and the second material can include F and / or Si. In some non-limiting examples, the first material and the second material can both include F. In some non-limiting examples, the first material and the second material can both include Si. In some non-limiting examples, each of the first material and the second material can include F and / or Si.

[0483] In some non-limiting examples, at least one of the first material and the second material can include both F and Si. In some non-limiting examples, one of the first material and the second material can be free of F and / or Si. In some non-limiting examples, the second material can include F and / or Si, and the first material can be free of F and / or Si.

[0484] In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the other materials of patterned coating 420 may include sp 2 In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the other materials of patterned coating 420 may include sp 3 In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may contain F and sp 3 The patterned coating 420 may include carbon, and at least one of the other materials may include sp 2 In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may contain F and sp 3 carbon, and all F bonded to the carbon (C) are sp 3 The carbon may be bonded to at least one of the other materials of the patterned coating 420. 2 In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may contain F and sp 3 may contain carbon, and all F bonded to C may be sp 3 The carbon may be bonded to at least one of the other materials of the patterned coating 420. 2It may include carbon and may not include F. As a non-limiting example, in any of the above non-limiting examples, "at least one of the materials of patterned coating 420" may correspond to the second material, and "at least one of the other materials of patterned coating 420" may correspond to the first material.

[0485] As will be appreciated by those skilled in the art, F,sp 2 Carbon, sp 3 The presence of materials in the coating that include at least one of carbon, aromatic hydrocarbon moieties, and / or other functional groups or moieties can be detected using various methods known in the art, including, by way of non-limiting example, X-ray Photoelectron Spectroscopy (XPS).

[0486] In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the other materials of patterned coating 420 may include an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the materials of patterned coating 420 may not include an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F and may not include an aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 420 may include an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F and may not include an aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 420 may include an aromatic hydrocarbon moiety and may not include F. Non-limiting examples of aromatic hydrocarbon moieties include at least one of a substituted polycyclic aromatic hydrocarbon moiety, an unsubstituted polycyclic aromatic hydrocarbon moiety, a substituted phenyl moiety, and an unsubstituted phenyl moiety.

[0487] In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the other materials of patterned coating 420 may include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the materials of patterned coating 420 may not include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and may not include a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 420 may include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F and may be free of polycyclic aromatic hydrocarbon moieties, and at least one of the other materials of patterned coating 420 may include polycyclic aromatic hydrocarbon moieties and may be free of F.

[0488] In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the other materials of the patterned coating 420 may include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the materials of the patterned coating 420 may not include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety, and may not include a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterned coating 420 may include a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety and may not include a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of patterned coating 420 may include a polycyclic aromatic hydrocarbon moiety and may not include a fluorocarbon moiety or a siloxane moiety.

[0489] In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the other materials of patterned coating 420 may include a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F, and at least one of the materials of patterned coating 420 may not include a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F and not include a phenyl moiety, and at least one of the other materials of patterned coating 420 may include a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include F and may not include a phenyl moiety, and at least one of the other materials of patterned coating 420 may include a phenyl moiety and may not include F.

[0490] In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the other materials of the patterned coating 420 may include a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety, and at least one of the materials of the patterned coating 420 may not include a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety and may not include a phenyl moiety, and at least one of the other materials of the patterned coating 420 may include a phenyl moiety. In some non-limiting examples, at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety and may not include a phenyl moiety, and at least one of the other materials of patterned coating 420 may include a phenyl moiety and may not include a fluorocarbon moiety or a siloxane moiety.

[0491] In general, the molecular structures and / or molecular compositions of the materials of the patterned coating 420, which may be, for example, the first and second materials, may differ from one another. In some non-limiting examples, the materials may be selected to have at least one property that is substantially similar to or different from one another, including, but not limited to, at least one of the following: monomer molecular structure, monomer backbone, and / or functional groups, presence of common elements, similarity of molecular structure, characteristic surface energy, refractive index, molecular weight, and thermal properties, including, but not limited to, melting point, sublimation temperature, glass transition temperature, or thermal decomposition temperature.

[0492] Characteristic surface energy, when used herein particularly with respect to a material, may generally refer to the surface energy determined from such a material. As a non-limiting example, characteristic surface energy may be measured from a surface formed by a material deposited and / or coated in thin film form. Various methods and theories are known for determining the surface energy of a solid. As a non-limiting example, surface energy may be calculated and / or derived based on a series of contact angle measurements in which various liquids are allowed to come into contact with the surface of the solid to measure the contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, the surface energy of a solid surface may be equal to the surface tension of the liquid with the highest surface tension that completely wets the surface. As a non-limiting example, a Zisman plot may be used to determine the highest surface tension value that results in complete wetting with the surface (i.e., a contact angle of 0°).

[0493] In some non-limiting examples, at least one of the first material and the second material of patterned coating 420 can be an oligomer.

[0494] In some non-limiting examples, the first material can include a first oligomer and the second material can include a second oligomer. Each of the first oligomer and the second oligomer can include multiple monomers.

[0495] In some non-limiting examples, at least a fraction of the molecular structure of at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may be represented by the following formula: Mon n (I) is determined from Mon represents a monomer, n is an integer of at least two.

[0496] In some non-limiting examples, n can be at least one integer between about 2-00, 2-50, 3-20, 3-15, 3-10, or 3-7.

[0497] In some non-limiting examples, the molecular structures of the first material and the second material of the patterned coating 420 can each independently be represented by Formula (I). As a non-limiting example, n of the monomer and / or the first material can be different from that of the second material. In some non-limiting examples, n of the first material can be the same as n of the second material. In some non-limiting examples, n of the first material can be different from n of the second material. In some non-limiting examples, the first material and the second material can be oligomers.

[0498] In some non-limiting examples, the monomer can include at least one of F and Si.

[0499] In some non-limiting examples, the monomer may include a functional group. In some non-limiting examples, at least one functional group of the monomer may have low surface tension. In some non-limiting examples, at least one functional group of the monomer may include at least one of F and Si. Non-limiting examples of such functional groups include at least one of a fluorocarbon group and a siloxane group. In some non-limiting examples, the monomer may include a silsesquioxane group.

[0500] Although some non-limiting examples have been described herein with respect to a first material and a second material, it will be understood that the patterned film may further include at least one additional material, and the descriptions regarding the molecular structure and / or properties of the first material, second material, first oligomer, and / or second oligomer may be applicable with respect to the additional material that may be contained in the patterned film.

[0501] Surface tensions attributable to molecular fragments, including but not limited to, monomers, monomer backbone units, linkers, or functional groups, can be determined using various methods known in the art. Non-limiting examples of such methods include the use of Parachor, as may be further described in, for example, "Conception and Significance of the Parachor" Nature 196:890-891. In some non-limiting examples, at least one monomer functional group may have a surface tension of less than or equal to at least one of about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, or 10 dynes / cm.

[0502] In some non-limiting examples, the monomer may include at least one of a CF2 and a CF2H moiety. In some non-limiting examples, the monomer may include at least one of a CF2 and a CF3 moiety. In some non-limiting examples, the monomer may include a CH2CF3 moiety. In some non-limiting examples, the monomer may include at least one of a C and an O. In some non-limiting examples, the monomer may include a fluorocarbon monomer. In some non-limiting examples, the monomer may include at least one of a vinyl fluoride moiety, a vinylidene fluoride moiety, a tetrafluoroethylene moiety, a chlorotrifluoroethylene moiety, a hexafluoropropylene moiety, or a fluorinated 1,3-dioxole moiety.

[0503] In some non-limiting examples, a monomer may comprise a monomer backbone and a functional group. In some non-limiting examples, the functional group may be attached to the monomer backbone directly or through a linker group. In some non-limiting examples, a monomer may comprise a linker group, and the linker group may be attached to the monomer backbone and the functional group. In some non-limiting examples, a monomer may comprise multiple functional groups, which may be the same as or different from one another. In such examples, each functional group may be attached to the monomer backbone directly or through a linker group. In some non-limiting examples, when multiple functional groups are present, multiple linker groups may also be present.

[0504] In some non-limiting examples, the molecular structure of at least one of the materials of the patterned coating 420, which may be the first material and / or the second material, may include a plurality of different monomers. In some non-limiting examples, such molecular structure may include monomer species having different molecular compositions and / or molecular structures. Non-limiting examples of such molecular structures include those represented by the following formula: (Mon A ) k (Mon B ) m (I-1) (Mon A ) k (Mon A ) m (Mon C ) o (I-2) is determined from Mon A , Mon B , and Mon C represent the monomer species, k, m, and o each represent an integer of at least two.

[0505] In some non-limiting examples, k, m, and o each represent at least one integer from about 2 to 100, about 2 to 50, about 3 to 20, about 3 to 15, about 3 to 10, or about 3 to 7. Those skilled in the art will recognize that the various non-limiting examples and descriptions of the monomer, Mon, are Mon. A, Mon B , and Mon C It will be understood that the above may be applicable with respect to each of the above.

[0506] In some non-limiting examples, the monomer may be represented by the following formula:

[0507] M-(LR x ) y (II) is determined from M represents a monomer backbone unit; L represents a linker group; R represents a functional group; x is an integer from 1 to 4, y is an integer of 1 to 3.

[0508] In some non-limiting examples, the linker group may be represented by at least one of a single bond, O, N, NH, C, CH, CH, and S.

[0509] The various non-limiting examples of functional groups described herein can be applied with respect to R in Formula (II). In some non-limiting examples, the functional group R can comprise an oligomeric unit, which can further comprise a plurality of functional group monomeric units. In some non-limiting examples, the functional group monomeric unit can be at least one of CH or CF. In some non-limiting examples, the functional group can comprise a CHCF moiety. For example, such functional group monomeric units can be linked together to form at least one of alkyl or fluoroalkyl oligomeric units. In some non-limiting examples, the oligomeric unit can further comprise a functional terminal unit. In some non-limiting examples, the functional terminal unit can be located at the end of the oligomeric unit and bonded to the functional monomeric unit. In some non-limiting examples, the end at which the functional terminal unit can be located can correspond to a functional fragment that can be distal to the monomer backbone unit. In some non-limiting examples, the functional terminal unit can comprise at least one of CFH or CF.

[0510] In some non-limiting examples, the monomeric backbone unit M can have a high surface tension. In some non-limiting examples, the monomeric backbone unit can have a higher surface tension than at least one of the functional groups R attached to it. In some non-limiting examples, the monomeric backbone unit can have a higher surface tension than any of the functional groups R attached to it.

[0511] In some non-limiting examples, the monomer backbone unit can have a surface tension of at least one of about 25 dynes / cm, about 30 dynes / cm, about 40 dynes / cm, about 50 dynes / cm, about 75 dynes / cm, about 100 dynes / cm, about 150 dynes / cm, about 200 dynes / cm, about 250 dynes / cm, about 500 dynes / cm, about 1,000 dynes / cm, about 1,500 dynes / cm, or about 2,000 dynes / cm.

[0512] In some non-limiting examples, the monomer backbone unit may include phosphorus (P) and N, including but not limited to phosphazenes, where a double bond exists between P and N, which may be represented as "NP" or "N=P". In some non-limiting examples, the monomer backbone unit may include SiO 3 / 2 The silsesquioxanes may contain Si and O, including but not limited to, silsesquioxanes, which may be represented as:

[0513] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, is represented by the following formula: (NP-(LR x ) y ) n (III) is determined from NP represents a phosphazene monomer backbone unit; L represents a linker group; R represents a functional group; x is an integer from 1 to 4, y is an integer from 1 to 3, n is an integer of at least two.

[0514] In some non-limiting examples, the molecular structure of the first material and / or the second material can be represented by Formula (III). In some non-limiting examples, at least one of the first material and the second material can be cyclophosphazene. In some non-limiting examples, the molecular structure of cyclophosphazene can be represented by Formula (III).

[0515] In some non-limiting examples, L may represent oxygen, x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, at least a portion of the molecular structure of at least one material of patterned coating 420, which may be, for example, the first material and / or the second material, may be represented by the following formula: (NP(OR f )2) n (IV) is determined from R f represents a fluoroalkyl group, n is an integer of 3 to 7.

[0516] In some non-limiting examples, the fluoroalkyl group may include at least one of a CF2 group, a CF2H group, a CH2CF3 group, and a CF3 group. In some non-limiting examples, the fluoroalkyl group may be represented by the following formula:

[0517] [ka] is determined from p is an integer from 1 to 5, q is an integer from 6 to 20; Z represents hydrogen or F.

[0518] In some non-limiting examples, p can be 1 and q can be an integer from 6 to 20.

[0519] In some non-limiting examples, the fluoroalkyl group R f can be represented by formula (V).

[0520] In some non-limiting examples, at least a fraction of the molecular structure of at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may be represented by the following formula: (SiO 3 / 2 -(LR)) n (VI) is determined from L represents a linker group; R represents a functional group; n is an integer from 6 to 12.

[0521] In some non-limiting embodiments, L can represent at least one occurrence of a single bond, O, substituted alkyl, or unsubstituted alkyl. In some non-limiting examples, n can be 8, 10, or 12. In some non-limiting examples, R can include a functional group having low surface tension. In some non-limiting examples, R can include at least one of an F-containing group and a Si-containing group. In some non-limiting examples, R can include at least one of a fluorocarbon group and a siloxane-containing group. In some non-limiting examples, R can include at least one of a CF2 group and a CF2H group. In some non-limiting examples, R can include at least one of a CF2 and a CF3 group. In some non-limiting examples, R can include a CH2CF3 group. In some non-limiting examples, the material represented by Formula (VI) can be a polyoctahedral silsesquioxane.

[0522] In some non-limiting examples, at least a fraction of the molecular structure of at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may be represented by the following formula: (SiO 3 / 2 -R f ) n(VII) is determined from n is an integer from 6 to 12, R f represents a fluoroalkyl group.

[0523] In some non-limiting examples, n may be 8, 10, or 12. In some non-limiting examples, R f may include functional groups with low surface tension. In some non-limiting examples, R f can include at least one of a CF2 moiety and a CF2H moiety. In some non-limiting examples, R f can include at least one of a CF2 moiety and a CF3 moiety. In some non-limiting examples, R f may include a CHCF moiety. In some non-limiting examples, the material represented by formula (VII) may be a polyoctahedral silsesquioxane.

[0524] In some non-limiting examples, the fluoroalkyl group, R f can be represented by formula (V).

[0525] In some non-limiting examples, at least a fraction of the molecular structure of at least one of the materials of patterned coating 420, which may be, for example, the first material and / or the second material, may be represented by the following formula: (SiO 3 / 2 -(CH2) x (CF3)) n (VIII) is determined from x is an integer from 1 to 5, n is an integer from 6 to 12.

[0526] In some non-limiting examples, n may be 8, 10, or 12.

[0527] In some non-limiting examples, the compound represented by formula (VIII) can be a polyoctahedral silsesquioxane.

[0528] In some non-limiting examples, the functional group R and / or the fluoroalkyl group R f may be independently selected at each occurrence of such group in any of the foregoing formulas. It will also be understood that any of the foregoing formulas may represent a substructure of a compound, and that additional groups or moieties may be present that are not explicitly shown in the formula above. It will also be understood that the various formulas provided in this application may represent linear, branched, cyclic, cyclic-linear, and / or bridged structures.

[0529] In some non-limiting examples, the patterned coating 420 may include at least one material represented by at least one of the following formulas: (I), (I-1), (I-2), (II), (III), (IV), (VI), (VII), and (VIII), and at least one material having at least one of the following properties: (a) including an aromatic hydrocarbon moiety; (b) including sp2 carbon; (c) including a phenyl moiety; (d) having a characteristic surface energy greater than about 20 dynes / cm; and (e) exhibiting photoluminescence, including but not limited to, exhibiting photoluminescence at a wavelength of at least about 365 nm, when irradiated with excitation radiation having a wavelength of about 365 nm.

[0530] In some non-limiting examples, the patterned film can further include a third material different from the first material and the second material, hi some non-limiting examples, the third material can include a monomer in common with at least one of the first material and the second material.

[0531] In some non-limiting examples, the difference in sublimation temperatures of the materials of patterned coating 420, including but not limited to the difference between the first and second materials, can be no more than about one of 5° C., 10° C., 15° C., 20° C., 30° C., 40° C., or 50° C. In some non-limiting examples, at least one of the materials of patterned coating 420, including but not limited to the first and / or second materials, can include at least one of F and Si, and the sublimation temperatures of the materials of patterned coating 420 can differ by no more than about one of 5° C., 10° C., 15° C., 20° C., 25° C., 40° C., or 50° C. In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the first material and / or the second material, may include at least one of a fluorocarbon moiety and a siloxane moiety, and the sublimation temperatures of the materials of the patterned coating 420 may differ by at least one of about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C.

[0532] In some non-limiting examples, the difference in melting temperatures of the materials of patterned coating 420, including but not limited to the difference between the first and second NIC materials, may be no more than at least one of about 5° C., about 10° C., about 15° C., about 20° C., about 30° C., about 40° C., or about 50° C. In some non-limiting examples, at least one of the materials of patterned coating 420, including but not limited to the first material and / or the second material, may comprise at least one of F and Si, and the melting temperatures of the materials of patterned coating 420 may differ by no more than at least one of about 5° C., about 10° C., about 15° C., about 20° C., about 25° C., about 40° C., or about 50° C. In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the first material and / or the second material, may include at least one of a fluorocarbon portion and a siloxane portion, and the melting temperatures of the materials of the patterned coating 420 may differ by at least one of about 5°C, about 10°C, about 15°C, about 20°C, about 25°C, about 40°C, or about 50°C.

[0533] In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the first material and / or the second material, can have a low characteristic surface energy. In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the first material and / or the second material, can have a low characteristic surface energy, and at least one of the materials of the patterned coating 420 can include at least one of F and Si. In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the first material and / or the second material, can have a low characteristic surface energy and include at least one of F and Si, and at least one other material of the patterned coating 420 can have a high characteristic surface energy. In some non-limiting examples, the presence of F and Si can be explained by the presence of fluorocarbon moieties and siloxane moieties, respectively. In some non-limiting examples, at least one of the materials, including but not limited to the second material, may have a low characteristic surface energy of at least one of about 10-20 dynes / cm, about 12-20 dynes / cm, about 15-20 dynes / cm, or about 17-19 dynes / cm, and another material, including but not limited to the first material, may have a high characteristic surface energy of at least one of about 20-100 dynes / cm, about 20-50 dynes / cm, or about 25-45 dynes / cm. In some non-limiting examples, at least one of the materials may include at least one of F and Si. In some non-limiting examples, the second material may include at least one of F or Si.

[0534] In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the second material, may have a low specific surface energy of about 20 dynes / cm or less and may include at least one of F and / or Si, and another material, including but not limited to the first material, may have a specific surface energy of at least about 20 dynes / cm.

[0535] In some non-limiting examples, at least one of the materials of the patterned coating 420, including but not limited to the second material, may have a low specific surface energy of about 20 dynes / cm or less and may include at least one of a fluorocarbon moiety and a siloxane moiety, and another material of the patterned coating 420, including but not limited to the first material, may have a specific surface energy of at least about 20 dynes / cm.

[0536] In some non-limiting examples, the surface energy of each of the two or more materials of the patterned coating 420, including but not limited to the surface energies of the first material and the second material, is less than about 25 dynes / cm, less than about 21 dynes / cm, less than about 20 dynes / cm, less than about 19 dynes / cm, less than about 18 dynes / cm, less than about 17 dynes / cm, less than about 16 dynes / cm, less than about 15 dynes / cm, less than about 14 dynes / cm, less than about 13 dynes / cm, less than about 12 dynes / cm, less than about 11 dynes / cm, or less than about 10 dynes / cm.

[0537] In some non-limiting examples, at least one of the materials of patterned coating 420, including but not limited to the first material and the second material, can have a refractive index at at least one of wavelengths of 500 nm and 460 nm that is less than or equal to at least one of about 1.5, about 1.45, about 1.44, about 1.43, about 1.42, or about 1.41. In some non-limiting examples, patterned coating 420 can include at least one material that exhibits photoluminescence, and patterned coating 420 can have a refractive index at at least one of wavelengths of 500 nm and 460 nm that is less than or equal to at least one of about 1.5, about 1.45, about 1.44, about 1.43, about 1.42, or about 1.41.

[0538] In some non-limiting examples, the molecular weight of at least one of the materials of the patterned coating 420, including but not limited to the first material and the second material, may be greater than at least one of about 750, about 1,000, about 1,500, about 2,000, about 2,500, or about 3,000.

[0539] In some non-limiting examples, the molecular weight of at least one of the materials of the patterned coating 420, including but not limited to the first material and the second material, may be less than or equal to at least one of about 10,000, about 7,500, or about 5,000.

[0540] In some non-limiting examples, the patterned coating 420 may include multiple materials that exhibit similar thermal properties, and at least one of the materials may exhibit photoluminescence. In some non-limiting examples, the patterned coating 420 may include multiple materials with similar thermal properties, and at least one of the materials may be photoluminescent, and at least one of the materials may include F or Si. In some non-limiting examples, the patterned coating 420 may include multiple materials with similar thermal properties, including but not limited to the melting or sublimation temperatures of the materials, and at least one of the materials may exhibit photoluminescence at a wavelength of at least about 365 nm when excited by radiation having an excitation wavelength of about 365 nm, and at least one of the materials may include at least one of F and Si.

[0541] In some non-limiting examples, the patterned coating 420 may include a plurality of materials having at least one common element or at least one common substructure, and at least one of the materials may exhibit photoluminescence. In some non-limiting examples, at least one of the materials may include F and Si. In some non-limiting examples, the patterned coating 420 may include a plurality of materials having similar thermal properties, and at least one of the materials may exhibit photoluminescence at wavelengths greater than about 365 nm when excited by radiation having an excitation wavelength of about 365 nm, and at least one of the materials may include at least one of F and Si. In some non-limiting examples, the at least one common element may include at least one of F and Si. In some non-limiting examples, the at least one particle structure may include at least one of a fluorocarbon and a siloxyl.

[0542] In some non-limiting examples, a method for fabricating optoelectronic device 700 includes: Lateral direction depositing a patterned film on the first exposed layer surface 11 of the device 700 in the first portion 601; and Lateral direction The method may include depositing a deposition material 1631 on the second exposed layer surface 11 of the device 700 in the second portion 602 of the patterned coating 420. An initial sticking probability against deposition of the deposition material 1631 on the exposed layer surface 11 of the patterned coating 420 in the first portion 601 may be substantially less than an initial sticking probability against deposition of the deposition material 1631 on the exposed layer surface 11 in the second portion 602, such that the exposed layer surface 11 of the patterned coating 420 in the first portion 601 may be substantially devoid of a closure coat 1240 of the deposition material 1631. The patterned coating 420 deposited on the first exposed layer surface 11 of the device 700 may include a first material and a second material.

[0543] In some non-limiting examples, depositing the patterned coating 420 on the first exposed layer surface 11 of the device 700 may include providing a mixture containing multiple materials and depositing the mixture on the first exposed layer surface 11 of the device 700 to form the patterned coating 420 thereon. In some non-limiting examples, the mixture may include a first material and a second material. In some non-limiting examples, both the first material and the second material may be deposited on the first exposed layer surface 11 to form the patterned coating 420 thereon.

[0544] In some non-limiting examples, a mixture containing multiple materials may be deposited on the first exposed layer surface 11 of the device 700 by a PVD process, including, but not limited to, thermal evaporation. In some non-limiting examples, the patterned coating 420 may be formed by evaporating the mixture from a common evaporation source and depositing the mixture on the first exposed layer surface 11 of the device 700. In some non-limiting examples, by way of non-limiting example, the mixture containing the first and second materials may be placed in a common crucible and / or evaporation source that is heated under vacuum. Upon reaching the evaporation temperature of the materials, the vapor flux 1632 generated therefrom may be directed toward the first exposed layer surface 11 of the device 700 to deposit the patterned coating 420 thereon.

[0545] In some non-limiting examples, the patterned coating 420 may be deposited by co-evaporation of a first material and a second material. In some non-limiting examples, a first material may be evaporated from a first crucible and / or a first evaporation source, and a second material may be co-evaporated from a second crucible and / or a second evaporation source to form a mixture in the vapor phase and co-deposited on the first exposed layer surface 11 to provide the patterned coating 420 thereon.

[0546] To evaluate the properties of a particular exemplary patterned coating 420 containing at least two materials, a series of samples were prepared by depositing in vacuum an approximately 20 nm thick layer of an organic material that can be used as an HTL material, followed by depositing nucleation-modifying coatings having various compositions on top of the organic material layer, as summarized in Table 15 below.

[0547] [Table 15]

[0548] In this example, the patterning material is selected such that when deposited, for example as a thin film, the patterning material exhibits a low initial sticking probability that resists deposition of the deposition material 1631, which includes, but is not limited to, at least one of Ag and Yb.

[0549] In this example, PL material 1 and PL material 2 were selected such that, by way of non-limiting example, when deposited as a thin film, each of PL material 1 and PL material 2 can exhibit photoluminescence detectable by standard optical measurement techniques, including, but not limited to, fluorescence microscopy.

[0550] In Table 15, Sample 1 is a comparative sample in which a nucleation modification coating was provided by depositing a patterning material. Sample 2 is an exemplary sample in which a nucleation modification coating was provided by co-depositing a patterning material and PL material 1 together to form a coating containing PL material 1 at a concentration of 0.5% by volume. Sample 3 is an exemplary sample in which a nucleation modification coating was provided by co-depositing a patterning material and PL material 2 together to form a coating containing PL material 2 at a concentration of 0.5% by volume. Sample 4 is a comparative sample in which a nucleation modification coating was provided by depositing PL material 1. Sample 5 is a comparative sample in which a nucleation modification coating was provided by depositing PL material 2. Sample 6 is a comparative sample in which a nucleation modification coating was not provided on the organic material layer.

[0551] The photoluminescence (PL) response of each of Sample 1 1310, Sample 2 1320, and Sample 3 1330, as well as Sample 6 (not shown), was measured and plotted as shown in FIG. 13. The PL intensities of Sample 1 and Sample 6 were observed to be identical, thus indicating that the patterning material did not exhibit photoluminescence in the detected wavelength range. For simplicity, the PL intensity of Sample 6 is not plotted in FIG. 13. For each of Sample 2 and Sample 3, photoluminescence was detected at wavelengths from near 500 nm to approximately 600 nm.

[0552] Next, each of Samples 1-6 was subjected to open-mask deposition of Yb followed by Ag. Specifically, the samples were subjected to open-mask deposition of Yb followed by Ag on the surface of the nucleation modification coating formed by the above materials. More specifically, each sample was subjected to Yb vapor flux 1632 until a reference thickness of approximately 1 nm was reached, and then to Ag vapor flux 1632 until a reference thickness of approximately 12 nm was reached. Once the samples were prepared, optical transmission measurements were performed to determine the relative amounts of Yb and / or Ag deposited on the exposed layer surface 11 of the nucleation modification coating. As will be appreciated, samples with relatively little or no metal thereon may be substantially transparent, while samples having metal deposited thereon, particularly as a closed coating 1240, may generally exhibit substantially lower optical transmittance. Therefore, the relative performance of various exemplary coatings as patterned coating 420 can be evaluated by measuring the EM radiation transmittance, which can be directly correlated to the amount or thickness of metal deposition material deposited thereon from deposition of either Ag, Yb, or both.

[0553] The decrease in light transmittance as a function of wavelength for each of Sample 1 1410, Sample 2 1420, Sample 3 1430, Sample 4 1440, Sample 5 1450, and Sample 6 1460 was measured and plotted as shown in Figure 14. Additionally, the decrease in light transmittance at a wavelength of 600 nm after subjecting each sample to an Ag vapor flux was measured and is summarized in Table 16 below.

[0554] [Table 16]

[0555] Specifically, the % transmittance loss for each sample in Table 15 was determined by measuring the light transmittance through the sample before and after exposure to Yb and Ag vapor flux 1632 and expressing the loss in EM radiation transmittance as a percentage.

[0556] As can be seen, Samples 1, 2, and 3 exhibited relatively low transmittance reductions of less than 2%, or in the case of Samples 1 and 3, less than 1%. Thus, it can be observed that the nucleation modification coatings provided on these samples functioned as NICs. In contrast, Sample 4 exhibited transmittance reductions of 43%, Sample 5 of 47%, and Sample 6 of 45%, respectively. Thus, the nucleation modification coatings provided on these samples did not function as NICs, but may in fact have functioned as NPC1820.

[0557] Additionally, Sample 1, in which patterned coating 420 consists essentially of NIC material, was found to not exhibit photoluminescence. However, Samples 2 and 3, in which patterned coating 420 includes PL material 1 and PL material 2, respectively, in addition to the NIC material, were found to exhibit photoluminescence while also functioning as a NIC by providing a surface with a low initial sticking probability that resists the deposition of deposition material 1631.

[0558] sedimentary layer In some non-limiting examples, the device 1200 Lateral direction In the second portion 602 , a deposition layer 1230 including a deposition material 1631 may be disposed as a closed coating 1240 on an exposed layer surface 11 of an underlying layer, including but not limited to a substrate 10 .

[0559] In some non-limiting examples, the deposition layer 1230 can include a deposition material 1631.

[0560] In some non-limiting examples, the deposition material 1631 may include an element selected from at least one of potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum (Al), Mg, Zn, Cd, tin (Sn), or yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, or Yb. In some non-limiting examples, the element can include at least one of Mg, Ag, Al, Yb, or Li. In some non-limiting examples, the element can include at least one of Mg, Ag, or Yb. In some non-limiting examples, the element can include at least one of Mg or Ag. In some non-limiting examples, the element can be Ag.

[0561] In some non-limiting examples, the deposition material 1631 may be and / or include a pure metal. In some non-limiting examples, the deposition material 1631 may be at least one of pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%. In some non-limiting examples, the deposition material 1631 may be at least one of pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least one of about 95%, 99%, 99.9%, 99.99%, 99.999%, or 99.9995%.

[0562] In some non-limiting examples, the deposition material 1631 can include an alloy. In some non-limiting examples, the alloy can be at least one of an Ag-containing alloy, an Mg-containing alloy, or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy can have an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0563] In some non-limiting examples, the deposition material 1631 may include other metals instead of and / or in combination with Ag. In some non-limiting examples, the deposition material 1631 may include an alloy of Ag and at least one other metal. In some non-limiting examples, the deposition material 1631 may include an alloy of Ag and at least one of Mg or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5-95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the deposition material 1631 may include Ag and Mg. In some non-limiting examples, the deposition material 1631 may include an Ag:Mg alloy having a composition of about 1:10 to 10:1 by volume. In some non-limiting examples, the deposition material 1631 may include Ag and Yb. In some non-limiting examples, the deposition material 1631 may include a Yb:Ag alloy having a composition of...

Claims

1. 1. A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral direction defined by a lateral axis of the semiconductor device, the semiconductor device comprising: at least one lower refractive index coating disposed on a surface of the first layer, the at least one lower refractive index coating comprising a low refractive index material; and at least one electromagnetic (EM) radiation modifying layer embedded within the at least one lower refractive index coating and including at least one grain structure; Equipped with the at least one grain structure comprises a deposition material, and embedding the at least one grain structure of the at least one EM radiation modifying layer within the at least one lower refractive index coating modifies the absorption spectrum of the at least one EM radiation modifying layer for EM radiation that at least partially passes through the at least one EM radiation modifying layer at a non-zero angle relative to the lateral direction of the semiconductor device in at least a portion of the EM spectrum.

2. 2. The semiconductor device of claim 1, wherein the at least one lower refractive index coating includes a lower portion disposed between the first layer surface and the at least one EM radiation modifying layer and an upper portion disposed on the at least one EM radiation modifying layer.

3. The semiconductor device of claim 2 , wherein the lower portion includes a first coating and the upper portion includes a second coating.

4. 4. The semiconductor device of claim 1, further comprising a higher refractive index medium disposed at the refractive index interface with exposed layer surfaces of the plurality of lower refractive index coatings such that the EM radiation modifying layer is disposed between the first layer surface and the refractive index interface with the exposed layer surfaces of the plurality of lower refractive index coatings.

5. The semiconductor device of claim 4 , wherein the higher refractive index medium comprises an organic compound.

6. 6. The semiconductor device of claim 4 or 5, wherein the higher refractive index medium comprises a capping layer of the semiconductor device.

7. The semiconductor device of any one of claims 4 to 6, further comprising an air gap disposed across the higher refractive index medium.

8. The semiconductor device of any one of claims 4 to 7, wherein the higher refractive index medium comprises a higher refractive index layer deposited on the refractive index interface.

9. The semiconductor device according to any one of claims 4 to 8, wherein the higher refractive index medium is substantially transparent.

10. The semiconductor device of any one of claims 4 to 9, wherein the higher refractive index medium comprises lithium fluoride (LiF).

11. 11. The semiconductor device of claim 4, wherein the extinction coefficient of the higher refractive index medium is one of about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, and about 0.01 or less in at least a subrange of the visible range of the EM spectrum.

12. The semiconductor device of any one of claims 1 to 11, wherein the EM radiation modifying layer comprises a discontinuous layer of the at least one particle cluster.

13. 13. The semiconductor device of claim 1, wherein the first coating is made of a first low refractive index material and the second coating is made of a second low refractive index material.

14. 14. The semiconductor device of claim 13, wherein the first low refractive index material and the second low refractive index material are the same.

15. 15. The semiconductor device of claim 13 or 14, wherein at least one of the first coating and the first low refractive index material, and at least one of the second coating and the second low refractive index material, has a refractive index that is one of about 1.7 or less, about 1.6 or less, about 1.5 or less, about 1.45 or less, about 1.4 or less, about 1.35 or less, about 1.3 or less, and about 1.25 or less.

16. 16. The semiconductor device of claim 13, wherein at least one of the first coating and the first low refractive index material, and at least one of the second coating and the second low refractive index material, has a refractive index that is one of about 1.2 to 1.6, about 1.2 to 1.5, about 1.25 to 1.45, and about 1.25 to 1.

4.

17. 17. The semiconductor device of claim 13, wherein at least one of the first coating and the first low refractive index material, and at least one of the second coating and the second low refractive index material, has an extinction coefficient in the visible wavelength range of the EM spectrum that is one of about 0.1 or less, about 0.08 or less, about 0.05 or less, about 0.03 or less, and about 0.01 or less.

18. The semiconductor device of any one of claims 1 to 17, wherein at least one of the plurality of lower refractive index coatings is substantially transparent.

19. 19. The semiconductor device of any one of claims 1 to 18, wherein an average layer thickness of at least one of the plurality of lower refractive index coatings is one of about 60 nm or less, about 50 nm or less, about 40 nm or less, about 30 nm or less, about 20 nm or less, about 10 nm or less, about 8 nm or less, and about 5 nm or less.

20. 20. The semiconductor device of any one of claims 1 to 19, wherein the absorption capability is at least one of increasing absorption, decreasing absorption, upward shifting a wavelength range, downward shifting a wavelength range, and any combination of any of the above, of the absorption spectrum of EM radiation passing through the semiconductor device.

21. 21. The semiconductor device of any one of claims 1 to 20, wherein the portion of the EM spectrum corresponds to at least one of the visible range, the infrared (IR) range, the near infrared (NIR) range, the ultraviolet (UV) range, the UV-A range, the UV-B range of the EM spectrum, any sub-ranges thereof, and any combination of any of these.

22. The semiconductor device of any one of claims 1 to 21, wherein the deposited material is a metal.

23. 23. The semiconductor device of claim 22, wherein the deposited material comprises at least one of magnesium, silver, and ytterbium.

24. The semiconductor device of any one of claims 1 to 23, wherein the deposition material is co-deposited with a co-deposited dielectric material.

25. 25. The semiconductor device of any one of claims 1 to 24, wherein the at least one grain structure has unique characteristics selected from at least one of size, size distribution, shape, surface coverage, configuration, deposition density, and composition.

26. 26. The semiconductor device of claim 25, wherein the at least one grain structure has a coverage of one of about 10-50%, about 10-45%, about 12-40%, about 15-40%, about 15-35%, about 18-35%, about 20-35%, and about 20-30%.

27. 27. The semiconductor device of claim 25 or 26, wherein a majority of the at least one grain structure has a maximum feature size of less than or equal to one of about 40 nm, about 35 nm, about 30 nm, about 25 nm, and about 20 nm.

28. 28. The semiconductor device of any one of claims 25-27, wherein the at least one grain structure has a feature size that is at least one of a mean and a median of one of about 5-40 nm, about 5-30 nm, about 8-30 nm, about 10-30 nm, about 8-25 nm, about 10-25 nm, about 8-20 nm, about 10-20 nm, about 10-15 nm, and about 8-15 nm.

29. The semiconductor device of any one of claims 1 to 28, wherein the at least one grain structure comprises a seed around which the deposited material tends to coalesce.

30. a patterned coating disposed on the second layer surface; the first layer surface is an exposed layer surface of the patterned coating; 30. A semiconductor device according to any of claims 1 to 29, wherein an initial sticking probability against deposition of the deposition material onto a surface of the patterned coating is substantially less than at least one of 0.3 and the initial sticking probability against deposition of the deposition material onto a surface of the second layer, such that the patterned coating is substantially devoid of a closure coat of the deposition material.

31. 31. The semiconductor device of claim 30, wherein the patterned coating comprises at least one patterned material.

32. 32. The semiconductor device of claim 30 or 31, wherein the patterning film comprises a first patterning material having a first initial sticking probability that resists deposition of the deposition material, and a second patterning material having a second initial sticking probability that resists deposition of the deposition material, the first initial sticking probability being substantially less than the second initial sticking probability.

33. 33. The semiconductor device of claim 32, wherein the first patterning material is a nucleation inhibiting coating (NIC) material and the second patterning material is selected from at least one of an electron transport layer (ETL) material, Liq, and lithium fluoride (LiF).

34. 34. The semiconductor device of claim 1, wherein the layer extends across first and second portions in the at least one lateral direction, the at least one EM radiation-modifying layer extends across the first portion, and the semiconductor device is adapted to pass at least one EM signal through the first portion at a non-zero angle relative to the layer.

35. 35. The semiconductor device of claim 34, wherein the at least one EM signal has a wavelength range within at least a portion of at least one of an IR spectrum and an NIR spectrum.

36. 36. The semiconductor device of claim 34 or 35, wherein the first portion is substantially devoid of a closure coat of the deposition material.

37. The semiconductor device according to any one of claims 34 to 36, wherein the first portion corresponds to at least a part of a signal transmitting region.

38. 38. The semiconductor device of any one of claims 34 to 37, wherein the semiconductor device is adapted to accept the at least one EM signal through the semiconductor device for exchange with at least one under-display component.

39. the at least one under-display component: a receiver adapted to receive the at least one EM signal passing through the semiconductor device; and 40. The semiconductor device of claim 38, comprising at least one of the transmitters adapted to emit.

40. 40. The semiconductor device of claim 39, wherein the receiver is an IR detector and the transmitter is an IR emitter.

41. 41. The semiconductor device of claim 39 or 40, wherein the transmitter emits a first EM signal and the receiver detects a second EM signal that is a reflection of the first EM signal.

42. 42. The semiconductor device of claim 41, wherein said exchange of said first and second EM signals provides biometric authentication of a user.

43. 43. The semiconductor device of any one of claims 38 to 42, wherein the semiconductor device forms a display panel of a user device, the display panel surrounding the under-display component.

44. The semiconductor device of any one of claims 34 to 43, wherein the second portion includes at least one radiating region for radiating the at least one EM signal at a non-zero angle relative to the layer.

45. further comprising at least one semiconductor layer disposed over the semiconductor device layer; each emitting region includes a first electrode and a second electrode; the first electrode is disposed between the substrate and the at least one semiconductor layer; 45. The semiconductor device of claim 44, wherein the at least one semiconductor layer is disposed between the first electrode and the second electrode.

46. 46. ​​The semiconductor device of claim 45, further comprising at least one closure coating of said deposition material disposed on an exposed layer surface of said semiconductor device in said second portion.

47. 47. The semiconductor device of claim 46, wherein the second electrode comprises the at least one occlusive coating of the deposition material.

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