Horizontal buffing module

Abstract

To provide a horizontal pre-clean (HPC) module for a chemical mechanical polishing (CMP) processing system.SOLUTION: An HPC module 200 includes a chamber 210 having a basin 214 and a lid 216 which collectively define a processing area 212, and a rotatable vacuum table 230 disposed in the processing area. The rotatable vacuum table includes an array of channels defined in a supporting surface thereof. The HPC module also includes: a pad conditioning station 280 disposed proximate to the rotatable vacuum table; a pad carrier positioning arm 300 coupled to a pad carrier assembly 304; and an actuator 324 that is coupled to the pad carrier positioning arm and that allows the pad carrier assembly to swing between a first position over the rotatable vacuum table and a second position over the pad conditioning station.SELECTED DRAWING: Figure 2A

Description

[Technical field]

[0001]

[0001] The embodiments described herein relate generally to apparatus used in the manufacture of electronic devices, and more particularly to a horizontal buffing module that may be used to clean the surface of a substrate in a semiconductor device manufacturing process. [Background technology]

[0002] Chemical mechanical polishing (CMP) is commonly used in the manufacture of high density integrated circuits to planarize or polish a layer of material deposited on a substrate. In a typical CMP process, the substrate is held in a carrier head that presses the backside of the substrate against a rotating polishing pad in the presence of a polishing fluid. Material is removed throughout the substrate material layer surface that contacts the polishing pad by a combination of chemical and mechanical activity provided by the polishing fluid and the relative motion of the substrate and polishing pad. Typically, after one or more CMP processes are completed, the polished substrate is further processed in one or more post-CMP substrate processing steps. For example, the polished substrate may be further processed using one or a combination of cleaning, inspection, and metrology steps. Once the post-CMP steps are completed, the substrate can be sent from the CMP processing area to the next device manufacturing process, such as a lithography, etching, or deposition process.

[0003] To conserve valuable manufacturing floor space and reduce labor costs, CMP systems generally include a first portion, e.g., a front portion, that includes one or a combination of post-CMP cleaning, inspection, and / or pre-CMP or post-CMP metrology stations, and a second portion, e.g., a back portion, that is integrated with the first portion to form a single polishing system. The second portion may include multiple polishing stations.

[0004]

[0004] The first portion may include one or more vertical buffing modules for post-CMP cleaning of the substrate. Each vertical buffing module has a rotating chuck assembly for holding the substrate and a rotating buffing pad for cleaning the substrate surface. Unfortunately, the orientation of the vertical buffing modules limits the outer diameter of the buffing pad, so that only a limited area of ​​the substrate can be cleaned at a given time. Thus, substrate processing throughput is undesirably reduced according to the longer buffing time associated with the limited cleaning area of ​​the buffing pad.

[0005]

[0005] Furthermore, because the vertical buffing module holds the substrate in a vertical orientation, the vertical orientation of the substrate loaded into the vertical buffing module requires large overhead clearances for insertion and removal of the substrate. As a result, the overall size and / or footprint of the CMP system is undesirably increased in accordance with the larger overhead clearance requirements associated with the vertical orientation of the buffing module. Thus, the throughput density of the CMP system (substrates processed per unit time per unit area of ​​manufacturing floor space) is undesirably limited by the system's buffing module configuration.

[0006]

[0006] Therefore, there is a need in the art for an apparatus and method to solve the above-mentioned problems. Summary of the Invention

[0007]

[0007] The embodiments described herein relate generally to equipment used in the manufacture of electronic devices, and more particularly to a horizontal buffing module that may be used to clean the surface of a substrate in a semiconductor device manufacturing process.

[0008] In one embodiment, a substrate processing module includes a chamber having a vessel and a lid that collectively define a processing region. The module includes a rotatable vacuum table disposed within the processing region, the rotatable vacuum table including a plurality of annular channels defined in its substrate receiving surface. The module includes a pad conditioning station disposed proximate to the rotatable vacuum table. The module includes a pad carrier positioning arm having a first end and a second end distal from the first end, the first end coupled to a pad carrier assembly, and the second end coupled to an actuator configured to swing the pad carrier assembly between a first position above the rotatable vacuum table and a second position above the pad conditioning station.

[0009] In another embodiment, a method of processing a substrate includes positioning the substrate on a vacuum table of a substrate processing module. The vacuum table includes a plurality of annular channels defined in a substrate receiving surface thereof. The substrate receiving surface of the vacuum table is substantially perpendicular to the direction of gravity. A gripping area provided by the plurality of annular channels is between about 5% and about 30% of a surface area of ​​a substrate positioned thereon. The gripping area includes an effective area occupied by the plurality of channels in the substrate receiving surface of the vacuum table. The method includes pressing a buffing pad against a surface of the substrate while rotating the vacuum table thereunder. The buffing pad has a diameter of about 67 mm or greater, and a pressure exerted between the buffing pad and the surface of the substrate is about 3 psi or greater.

[0010] In yet another embodiment, a modular substrate processing system includes a substrate processing module. The module includes a chamber including a container and a lid. The lid includes a plurality of side panels, which together with the container collectively define a processing region. The module includes a rotatable vacuum table disposed within the processing region. The module includes a first substrate handler access door disposed within a first side panel of the plurality of side panels. The substrate handler access door is used to position a substrate on the rotatable vacuum table with the first substrate handler. The module includes a second substrate handler access door disposed within a second side panel of the plurality of side panels. The second substrate handler access door is used to remove a substrate from the rotatable vacuum table with the second substrate handler. The module includes a pad conditioning station disposed proximate to the rotatable vacuum table. The module includes a pad carrier positioning arm having a first end and a second end distal from the first end. The first end is coupled to the pad carrier assembly and the second end is coupled to an actuator configured to swing the pad carrier assembly between a first position above the rotatable vacuum table and a second position above the pad conditioning station.

[0011] In another embodiment, a substrate processing module includes a rotatable vacuum table disposed within a processing region of the substrate processing module, the rotatable vacuum table including a support surface including an array of channels. The module includes a pad conditioning station disposed proximate to the rotatable vacuum table. The module includes a pad carrier positioning arm coupled to the pad carrier assembly. The module includes an actuator coupled to the pad carrier positioning arm and configured to position the pad carrier assembly above a first position disposed above the support surface of the rotatable vacuum table and above a second position disposed above the pad conditioning station.

[0012] In another embodiment, a method of processing a substrate includes positioning the substrate on a vacuum table of a substrate processing module. The vacuum table includes an array of channels defined in a support surface thereof. The support surface of the vacuum table is substantially perpendicular to the direction of gravity. A grip area provided by the array of channels is between about 5% and about 30% of a surface area of ​​a substrate positioned thereon. The grip area includes an effective area occupied by the array of channels in the support surface of the vacuum table. The method includes pressing a buffing pad against a surface of the substrate while rotating the vacuum table thereunder. The buffing pad has a diameter of about 67 mm or greater, and a pressure exerted between the buffing pad and the surface of the substrate is about 3 psi or greater.

[0013] In another embodiment, a modular substrate processing system includes a substrate processing module. The module includes a chamber including a vessel and a lid. The lid includes a plurality of side panels, which together with the vessel collectively define a processing region. The module includes a rotatable vacuum table disposed within the processing region. The module includes a first substrate handler access door disposed within a first side panel of the plurality of side panels. The substrate handler access door is used to position a substrate on the rotatable vacuum table with the first substrate handler. The module includes a second substrate handler access door disposed within a second side panel of the plurality of side panels. The second substrate handler access door is used to remove a substrate from the rotatable vacuum table with the second substrate handler. The module includes a pad conditioning station disposed proximate to the rotatable vacuum table. The module includes a pad carrier positioning arm coupled to a pad carrier assembly. The module includes an actuator coupled to the pad carrier positioning arm and configured to position the pad carrier assembly above a first position disposed above the support surface of the rotatable vacuum table and above a second position disposed above the pad conditioning station.

[0014]

[0014] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above will be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only typical embodiments of the present disclosure and therefore should not be considered as limiting its scope, and the present disclosure may admit of other equally effective embodiments. [Brief description of the drawings]

[0015] [Figure 1A] 1 is a schematic plan view of an exemplary chemical mechanical polishing (CMP) processing system using a horizontal pre-clean (HPC) module as described herein, in accordance with one or more embodiments. [Figure 1B] FIG. 1B is a top isometric view of an exemplary CMP processing system, which may correspond to the schematic diagram shown in FIG. 1A, in accordance with one or more embodiments. [Figure 1C] 1B is a top view of the CMP processing system of FIG. 1B, which may correspond to the schematic diagram shown in FIG. 1A, in accordance with one or more embodiments. [Figure 2A] FIG. 2 is a top isometric view of one side of an example HPC module that may be used in the CMP processing system described herein. [Figure 2B] FIG. 2B is another top isometric view of a side of the HPC module of FIG. 2A. [Figure 2C] FIG. 2B is a top isometric view of another side of the HPC module of FIG. 2A. [Figure 3A] FIG. 3A is a side cross-sectional view taken along section line 3A-3A of FIG. 2C. [Figure 3B] FIG. 3B is a bottom isometric view of an example rotatable vacuum table that may be used in the HPC module of FIG. 3A. [Figure 3C] FIG. 3B is a top isometric view of an exemplary rotatable vacuum table that may be used in the HPC module of FIG. 3A. [Figure 3D] FIG. 4 is a plan view of an exemplary carrier film that may be used with the rotatable vacuum table of FIGS. 3B-3C. [Figure 3E]FIG. 3E is an enlarged plan view of a portion of FIG. 3D. [Figure 4A] FIG. 3B is a plan view of the HPC module of FIG. 3A. [Figure 4B] FIG. 3B is a side cross-sectional view of an exemplary pad conditioning station that may be used within the HPC module of FIG. 3A. [Figure 4C] 3B is a side cross-sectional view of an exemplary pad carrier positioning arm that may be used in the HPC module of FIG. 3A. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016]

[0028] For ease of understanding, the same reference numbers have been used, where possible, to designate identical elements that are common to the figures. It is envisioned that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0017]

[0029] The embodiments described herein relate generally to apparatus used in the manufacture of electronic devices, and more particularly to a horizontal buffing module that may be used to clean a surface of a substrate in a semiconductor device manufacturing process.

[0018]

[0030] FIG. 1A is a schematic plan view of an exemplary chemical mechanical polishing (CMP) processing system 100 using a horizontal pre-clean (HPC) module described herein, according to one or more embodiments. FIG. 1B is a top isometric view of the exemplary CMP processing system 100, which may correspond to the schematic view shown in FIG. 1A, according to one or more embodiments. FIG. 1C is a top view of the CMP processing system 100 of FIG. 1B, which may correspond to the schematic view shown in FIG. 1A, according to one or more embodiments. In FIG. 1B and FIG. 1C, certain parts of the housing as well as certain other internal and external components are omitted to more clearly show the HPC module in the CMP processing system 100. Here, the processing system 100 includes a first portion 105 and a second portion 106 coupled to and integral with the first portion 105. The first portion 105 is a substrate polishing portion featuring multiple polishing stations (not shown).

[0019]

[0031] The second portion 106 includes one or more post-CMP cleaning systems 110, a plurality of system loading stations 130, one or more substrate handlers, e.g., a first robot 124 and a second robot 150, one or more metrology stations 140, one or more location specific polishing (LSP) modules 142, one or more HPC modules 200, and one or more drying units 170. The HPC modules 200 are configured to process substrates 120 disposed in a substantially horizontal orientation (i.e., in the xy plane). In some embodiments, the second portion 106 optionally includes one or more vertical cleaning modules 112 configured to process substrates 120 disposed in a substantially vertical orientation (i.e., in the zy plane).

[0020]

[0032] Each LSP module 142 is configured to polish only a portion of the substrate surface, typically with a polishing member (not shown) having a surface area smaller than the surface area of ​​the substrate 120 being polished. LSP modules 142 are often used to finish a relatively small portion of the substrate 120 after it has been polished in the polishing modules, e.g., to remove additional material.

[0021]

[0033] The metrology station 140 is used to measure the thickness of a material layer disposed on the substrate 120 before and / or after polishing, to inspect the substrate 120 after polishing to determine whether a material layer has been removed from its field surface, and / or to inspect the substrate surface for defects before and / or after polishing. In those embodiments, the substrate 120 may be returned to the polishing pad for further polishing and / or sent to a different substrate processing module or station, such as a polishing module in the first part 105, or to the LSP module 142, based on the measurements or surface inspection results obtained using the metrology station 140. As shown in FIG. 1A, the metrology station 140 and the LSP module 142 are located in the area of ​​the second part 106 above (in the Z direction) a portion of one cleaning system 110.

[0022]

[0034] The first robot 124 is positioned to transfer the substrate 120 to and from the plurality of system loading stations 130, for example, between the plurality of system loading stations 130 and the second robot 150, and / or between the cleaning system 110 and the plurality of system loading stations 130. In some embodiments, the first robot 124 is positioned to transfer the substrate 120 between any of the system loading stations 130 and a processing system located proximate thereto. For example, in some embodiments, the first robot 124 may be used to transfer the substrate 120 between one of the system loading stations 130 and the metrology station 140.

[0023]

[0035] The second robot 150 is used to transfer the substrate 120 between the first part 105 and the second part 106. For example, here the second robot 150 is arranged to transfer the substrate 120 to be polished received from the first robot 124 to the first part 105 for polishing therein. The second robot 150 is then used to transfer the polished substrate 120 from the first part 105, for example from a transfer station (not shown) in the first part 105 to one of the HPC modules 200 and / or between different stations and modules located in the second part 106. Alternatively, the second robot 150 transfers the substrate 120 from a transfer station in the first part 105 to one of the LSP modules 142 or the metrology station 140. The second robot 150 can also transfer the substrate 120 from either the LSP module 142 or the metrology station 140 to the first part 105 for further polishing therein.

[0024]

[0036] The CMP processing system 100 of FIG. 1A features two cleaning systems 110 arranged on either side of the second robot 150. In FIG. 1A, at least some modules of one of the cleaning systems 110, e.g., one or more vertical cleaning modules 112, are located below (in the Z direction) the metrology station 140 and the LSP module 142 and are therefore not shown. The metrology station 140 and the LSP module 142 are not shown in FIG. 1C. In some other embodiments, the processing system 100 features only one cleaning system 110. Here, each of the cleaning systems 110 includes an HPC module 200, one or more wet cleaning modules 112, e.g., a brush or spray box, a drying unit 170, and a substrate handler 180 for transferring substrates 120 therebetween. Here, each HPC module 200 is located in the second portion 106 and in close proximity to the first portion 105.

[0025]

[0037] Typically, the HPC module 200 receives the polished substrate 120 from the second robot 150 through a first opening (not shown) formed in a side panel of the HPC module 200, for example through a door or slit valve disposed in the side panel. The substrate 120 is received in a horizontal orientation by the HPC module 200 for positioning on a horizontally disposed substrate support surface therein. The HPC module 200 then performs a pre-cleaning process, such as a buffing process, on the substrate 120 before the substrate 120 is transferred therefrom using the substrate handler 180.

[0026]

[0038] The substrate 120 is transferred from the HPC module 200 through a second opening, here a second substrate handler access door 224 (FIG. 1B), which is typically a door, e.g., a horizontal slot disposed through a second side panel of the HPC module 200, closable with a slit valve. Thus, the substrate 120 is still in a horizontal orientation when it is transferred from the pre-cleaning module 200. After the substrate 120 is transferred from the pre-cleaning module 200, the substrate handler 180 positions the substrate 120 in a vertical position for further processing in the vertical cleaning module 112 of the cleaning system 110. For example, the substrate handler 180 can swing the substrate 120 to a vertical position.

[0027]

[0039] In this example, the HPC module 200 has a first end 202 facing the first portion 105 of the processing system 100, a second end 204 facing opposite the first end 202, a first side 206 facing the second robot 150, and a second side facing opposite the first side 206. The first side 206 and the second side 208 extend at a right angle between the first end 202 and the second end 204.

[0028]

[0040] A plurality of vertical cleaning modules 112 are located within the second portion 106. The one or more vertical cleaning modules 112 are any one or combination of contact and non-contact cleaning systems (e.g., spray boxes and / or brush boxes) for removing polishing by-products from the surface of the substrate.

[0029]

[0041] The drying unit 170 is used to dry the substrate 120 after it has been processed by the cleaning module 112 and before it is transferred to the system loading station 130 by the first robot 124. Here, the drying unit 170 is a horizontal drying unit, where the drying unit 170 is configured to receive the substrate 120 through an opening (not shown) while the substrate 120 is disposed in a horizontal orientation.

[0030]

[0042] Here, the substrate 120 is moved between the HPC module 200 and the vertical cleaning module 112 , between the individual cleaning modules 112 , and between the cleaning modules 112 and the drying unit 170 using the substrate handler 180 .

[0031]

[0043] In embodiments herein, operation of the CMP processing system 100, including the substrate handler 180, is directed by a system controller 160. The system controller 160 includes a programmable central processing unit (CPU) 161 operable with memory 162 (e.g., non-volatile memory) and support circuits 163. The support circuits 163 are conventionally coupled to the CPU 161 and include caches, clock circuits, input / output subsystems, power supplies, and the like, and combinations thereof, coupled to the various components of the CMP processing system 100 to facilitate control thereof. The CPU 161 is one of any form of general-purpose computer processor used in industrial environments, such as a programmable logic controller (PLC), to control the various components and sub-processors of the processing system. The memory 162 coupled to the CPU 161 is non-transitory and is typically one or more of readily available memory, such as random access memory (RAM), read only memory (ROM), a floppy disk drive, a hard disk, or any other form of local or remote digital storage.

[0032]

[0044] Typically, memory 162 is in the form of a non-transitory computer-readable storage medium (e.g., non-volatile memory) that contains instructions that, when executed by CPU 161, facilitate operation of CMP processing system 100. The instructions in memory 162 are in the form of a program product, such as a program that implements the methods of the present disclosure. The program code may conform to any one of a number of different programming languages. In one example, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The programs of the program product define the functions of the embodiments (including the methods described herein).

[0033]

[0045] Exemplary non-transitory computer readable storage media include, but are not limited to, (i) non-writable storage media in which information may be permanently stored (e.g., a CD-ROM disk readable by a CD-ROM drive, a flash memory, a ROM chip, or any type of solid-state non-volatile semiconductor memory device, e.g., a read-only memory device in a computer, such as a solid-state drive (SSD)), and (ii) a writeable storage medium in which changeable information is stored (e.g., a floppy disk in a diskette drive, or a hard disk drive, or any type of solid-state random access semiconductor memory). Such computer readable storage media, when storing computer readable instructions that direct the functions of the methods described herein, are embodiments of the present disclosure. In some embodiments, the methods described herein, or portions thereof, are performed by one or more application specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), or other types of hardware implementations. In some other embodiments, the substrate processing and / or handling methods described herein are performed by a combination of software routines, ASICs, FPGAs, and / or other types of hardware implementations. One or more system controllers 160 may be used with one or any combination of the various modular polishing systems described herein and / or with the individual polishing modules thereof.

[0034]

[0046] FIG. 2A is a top isometric view of a second side 208 of an exemplary HPC module 200 that can be used in the CMP processing system 100 described herein. In FIG. 2A, the maintenance access panel has been omitted to more clearly show the internal components of the HPC module 200. FIG. 2B is another top isometric view of the second side 208 of the HPC module 200 of FIG. 2A. In FIG. 2B, the top panel of the lid 216 has also been omitted to more clearly show the internal components of the HPC module 200. FIG. 2C is a top isometric view of the first side 206 of the HPC module 200 of FIG. 2A. In FIG. 2C, the lid 216 has been omitted to more clearly show the internal components of the HPC module 200.

[0035]

[0047] Generally, HPC module 200 includes a chamber 210 (here, a vessel 214 and a lid 216 ) formed from a number of side panels that collectively define a processing region 212 .

[0036]

[0048] A first side panel 218 is formed on a first side 206 of the HPC module 200 facing the second robot 150. The first side panel 218 includes a first substrate handler access door 220 that is used to position the substrate 120 on the rotatable vacuum table 230 with the second robot 150. A second side panel 222 is formed on a second end 204 of the HPC module 200 facing away from the first portion 105. The second side panel 222 includes a second substrate handler access door 224 that is used to remove the substrate 120 from the rotatable vacuum table 230 with the substrate handler 180. A third side panel 226 is formed on a second side 208 of the HPC module 200. The third side panel 226 includes a maintenance access panel opening 228. The symmetry of the first substrate handler access door 220 and the maintenance access panel opening 228 formed in opposing side panels of the HPC module 200 advantageously provides a horizontal buffing module that can be installed on either side of the processing system 100, as shown in FIG. 1C.

[0037]

[0049] The rotatable vacuum table 230 may be disposed within the processing region 212 of the HPC module 200 and used to vacuum chuck the substrate 120. Also disposed within the processing region 212 may be an annular substrate lift mechanism 270 disposed radially outward of the rotatable vacuum table 230, a pad conditioning station 280 disposed proximate to the rotatable vacuum table 230, and a pad carrier positioning arm 300 movable between a first position on the rotatable vacuum table 230 and a second position on the pad conditioning station 280. For example, the pad carrier positioning arm 300 may position a pad carrier assembly 304 over a first position disposed above a support surface of the rotatable vacuum table 230 and over a second position disposed above the pad conditioning station 280.

[0038]

[0050] The rotatable vacuum table 230, the annular substrate lift mechanism 270, the pad conditioning station 280, and the pad carrier positioning arm 300 are each independently mounted to the vessel 214. The HPC module 200 further includes a rinse manifold 290 mounted to the vessel 214. A substrate center rinse bar 292 and one or more substrate spray bars 294 extend from the sides of the rinse manifold 290. The substrate center rinse bar 292 is used to direct a rinse fluid, e.g., cleaning fluid or water, toward a central region of the rotatable vacuum table 230. The substrate spray bar 294 is used to direct a spray toward one or more other regions of the rotatable vacuum table 230, e.g., a peripheral region or a side of the vacuum table 230. The rinse manifold 290 is positioned toward a corner of the vessel 214, and the rinse bar 292 and spray bar 294 extend along the second end 204 of the HPC module 200 inside the second side panel 222. In some embodiments, the rinse manifold 290 is adjacent the second side 208 (FIGS. 2A-2B). In some other embodiments, the rinse manifold 290 is adjacent the first side 206 (FIG. 2C). The HPC module 200 further includes a brush rinse 296 attached to the vessel 214. The brush rinse 296 is positioned adjacent the pad conditioning station 280 near the first end 202 of the HPC module 200 for rinsing one or more components of the pad conditioning station 280.

[0039]

[0051] In embodiments herein, the HPC module 200 includes a rotating chuck assembly having a carrier film disposed thereon and secured thereto. The chuck assembly holds the substrate in place during rotation using vacuum pressure applied through a plurality of channels formed through the carrier film. In some embodiments, the plurality of channels are formed in an array. This structural configuration of channels used in a typical carrier film may result in substrate slippage at higher torques and localized deformation of the substrate surface. For example, an area of ​​the substrate coinciding with an array of vacuum channels may deform relative to an adjacent area of ​​the substrate that is disposed on a solid portion of the carrier film. The locally deformed area of ​​the substrate reduces the buffing pad pressure applied thereto, causing uneven substrate cleaning. Thus, the embodiments described below reduce and / or substantially eliminate localized deformation of the carrier film.

[0040]

[0052] Figure 3A is a side cross-sectional view taken along section line 3A-3A of Figure 2C. Figures 3B-3C are bottom and top isometric views, respectively, of an exemplary rotatable vacuum table 230 that may be used in the HPC module 200 of Figure 3A. Figure 3D is a plan view of an exemplary carrier film that may be used with the rotatable vacuum table 230 of Figures 3B-3C. Figure 3E is an enlarged plan view of a portion of Figure 3D.

[0041]

[0053] The vacuum table 230 includes a chuck plate 232 having an upper surface 234. The upper surface 234 of the chuck plate 232 is substantially perpendicular to the direction of gravity. The chuck plate 232 is a cylindrical plate having a longitudinal axis c1 aligned with the direction of gravity. The chuck plate 232 includes a central hole 236 connecting a plurality of radial channels 238 (e.g., formed in a radial array). Here, the chuck plate 232 has six channels 238 equally spaced circumferentially. In some other embodiments, the chuck plate 232 includes 3-12 channels, e.g., 5-10 channels, e.g., 6-8 channels. Each of the channels in the array of radial channels 238 extends from the central hole 236 to a plurality of ports 240 formed in the upper surface 234. Here, each of the array of radial channels 238 includes five ports 240. In some other embodiments, each radial channel 238 includes 3-7 ports, e.g., 4-6 ports. Here, the plurality of ports 240 are equally spaced from one another in a radial direction along one of the arrays of channels 238. In some other embodiments, the plurality of ports 240 are non-uniformly spaced. The central hole 236, the array of radial channels 238, and the plurality of ports 240 are configured to provide pressure and fluid communication from a vacuum source 359 to the top surface 234 of the chuck plate 232 to vacuum-chuck the substrate 120 thereon. In some embodiments, the vacuum pressure is about -8 psi to about -4.5 psi relative to atmospheric pressure, e.g., about -7 psi to about -5.5 psi relative to atmospheric pressure. Thus, applying a vacuum negative pressure through the plurality of ports 240 secures the substrate 120 against the top surface 234. To remove the substrate 120 from the chuck plate 232, the vacuum pressure is vented and an optional positive pressure nitrogen purge is applied.

[0042]

[0054] The bottom surface of the chuck plate 232 is coupled to the chuck adapter 244. The chuck adapter 244 is a cylindrical plate disposed between the chuck plate 232 and the chuck motor 248 and couples the chuck plate 232 to the chuck motor 248. The chuck motor 248 is configured to rotate the chuck plate 232 and the chuck adapter 244 about a longitudinal axis c1. A longitudinal motor bore 250 of the chuck motor 248 receives a rotatable manifold 252 having a flange 254 at a proximal end. The flange 254 is coupled to the chuck adapter 244 such that the rotatable manifold 252 is rotated by rotation of the chuck adapter 244. The chuck plate 232, the chuck adapter 244, and the rotatable manifold 252 are removable from the motor bore 250 as a subassembly. In some embodiments, the chuck plate 232, the chuck adapter 244, the rotatable manifold 252, the screws and alignment pins between the chuck plate 232 and the chuck adapter 244, and the screws between the flange 254 and the chuck adapter 244 are formed from a plastic or polymer, such as polyetheretherketone (PEEK). The use of plastic parts throughout the subassembly instead of metal parts, such as stainless steel, reduces trace metal contamination of the substrate 120. A bearing 256 is disposed within the motor bore 250 at a distal end of the rotatable manifold 252 to center the rotatable manifold 252 within the motor bore 250. The bearing 256 has an inner diameter for rotatably coupling with an outer diameter of the rotatable manifold 252 to facilitate relative rotation between the rotatable manifold 252 and the motor bore 250. A rotating elbow 258 is coupled to the distal end of the rotatable manifold 252 by a jam nut 260. The rotating elbow 258 provides pressure and fluid communication between a stationary vacuum source 359 and the rotatable manifold 252 .

[0043]

[0055] 3D, a carrier film 264 is disposed on the top surface 234 of the chuck plate 232. In some embodiments, the carrier film 264 is secured to the top surface 234 using an adhesive. In some embodiments, the carrier film 264 is removably attached to the top surface 234 so that the carrier film 264 can be replaced. The carrier film 264 has a support surface 266 (e.g., a substrate receiving surface) facing away from the top surface 234 of the chuck plate 232. The support surface 266 is substantially perpendicular to the direction of gravity. In some embodiments, the carrier film 264 has a closed-cell porous structure to communicate vacuum pressure and form a seal between the chuck plate 232 and the substrate 120. In some embodiments, the carrier film 264 is formed from a polymer or plastic, such as polyurethane. Beneficially, the carrier film 264 improves the contact area between the chuck plate 232 and the substrate 120, reduces trace metal contamination, reduces scratch and defect formation due to particles trapped between the chuck plate 232 and the substrate 120, and / or optimizes the distribution of vacuum pressure applied to the substrate 120. The carrier film 264 includes a plurality of channels 268 formed in an array in the support surface 266. The array of channels 268 are openings in the carrier film 264 that are aligned with corresponding annular channels disposed therebelow.

[0044]

[0056] Here, the array of channels 268 is annular channels surrounding a longitudinal axis c1. In some other embodiments, the array of channels 268 has a non-annular shape. Here, the innermost channel of the array of channels 268 is radially spaced a distance r1 from the longitudinal axis c1 through the center of the carrier film 264. In some embodiments, the distance r1 is about 100 mm or more, such as about 100 mm to about 200 mm, such as about 150 mm. Here, the carrier film 264 includes five concentric channels 268 with equal radial spacing s1 between adjacent channels 268. In some other embodiments, the carrier film 264 includes 3 to 7 concentric channels, such as 4 to 6 concentric channels. In some other embodiments, the array of channels 268 is non-uniformly spaced. In some embodiments, the spacing s1 between the channels 268 is about 50 mm or less, such as about 20 mm to about 50 mm, such as about 30 mm to about 40 mm. Here, each of the array of channels 268 includes six arcuate segments. In some other embodiments, the array of channels 268 includes between 3 and 12 arcuate segments, e.g., between 5 and 10 arcuate segments, e.g., between 6 and 8 arcuate segments. In some embodiments, the circumferential spacing s2 between adjacent arcuate segments of the same channel 268 is about 50 mm or less, e.g., between about 20 mm and about 50 mm.

[0045]

[0057] Beneficially, the array of channels 268 has a width w1 that prevents deformation of the substrate 120 when a vacuum is applied. In some embodiments, the width w1 is about 10 mm or less, such as about 5 mm or less, such as about 2 mm or less, such as about 1 mm or less, or between about 1 mm and about 2 mm, such as about 1.5 mm. In some embodiments, the use of narrower channels 268 allows for a higher vacuum pressure to be applied without causing deformation of the substrate 120. In some embodiments, the grip area provided by the array of channels 268 is about 5% or more, such as between about 5% and about 30%, such as between about 10% and about 30%, such as between about 15% and about 30%, such as between about 15% and about 25%, such as about 20%, of the surface area of ​​the substrate 120 to be processed placed thereon. The grip area is defined as the effective area occupied by the array of channels 268 in the support surface 266 of the vacuum table 230. In some embodiments, the HPC module 200 uses higher torques compared to the vertical cleaning module 112. To handle the higher torques compared to other designs, the array of channels 268 described herein has increased vacuum grip to prevent the substrate 120 from slipping off the vacuum table 230 without causing deformation of the substrate 120, where the increased vacuum grip is provided by a larger gripping area, a higher vacuum pressure, or both.

[0046]

[0058] 4A is a plan view of the HPC module 200 of FIG. 2C. An annular substrate lift mechanism 270 is disposed radially outward of the vacuum table 230. The lift mechanism 270 includes a plurality of substrate contact points 272 disposed proximate to the periphery of the vacuum table 230. Each of the substrate contact points 272 is an upwardly facing shoulder formed on a substrate hoop 274 that surrounds the chuck plate 232. The lift mechanism 270 is configured such that when lifting the substrate 120 from the support surface 266 of the vacuum table 230, one of the plurality of substrate contact points 272 contacts the substrate 120 prior to other substrate contact points of the plurality of substrate contact points 272. The annular substrate lift mechanism 270 works in conjunction with the previously described vacuum pressure vent and optional nitrogen purge to remove the substrate 120 from the chuck plate 232. Beneficially, the use of the substrate lift mechanism 270 allows for faster dechucking of the substrate 120 as compared to venting and optional nitrogen purging alone.

[0047]

[0059] FIG. 4B is a side cross-sectional view of an exemplary pad conditioning station 280 that may be used within the HPC module 200 of FIG. 3A. The pad conditioning station 280 is disposed proximate to the rotatable vacuum table 230. The pad conditioning station 280 includes a conditioning brush 282 that faces away from the vessel 214. In some embodiments, the brush 282 includes a fibrous material. In some embodiments, the fibers are formed from nylon or another similar material. The brush 282 is coupled to a rotatable brush shaft 284. The brush shaft 284 extends through the vessel 214 and is fluidly coupled to a conditioning fluid source (not shown). The brush shaft 284 is configured to convey a conditioning fluid, for example deionized water, to a spray nozzle 286 disposed proximate to the brush 282. During operation of the pad conditioning station 280, the brush 282 is rotated by the brush shaft 284. During rotation, the conditioning fluid flows through the brush shaft 284 to the spray nozzles 286, thereby wetting the brushes 282 and facilitating the conditioning process.

[0048]

[0060] FIG. 4C is a side cross-sectional view of an exemplary pad carrier positioning arm 300 that may be used in the HPC module 200 of FIG. 3A. The pad carrier positioning arm 300 is positioned proximate to the rotatable vacuum table 230 and the pad conditioning station 280. The distal end 302 of the pad carrier positioning arm 300 includes a vertically movable pad carrier assembly 304 for supporting a rotatable buffing pad 306 on a buffing pad support surface disposed at a lower end thereof. In some embodiments, the pad carrier assembly 304 is sized to support a buffing pad 306 having a diameter of about 67 mm, e.g., about 67 mm to about 150 mm, e.g., about 67 mm, or about 134 mm. In some embodiments, the pad carrier positioning arm 300 of the present disclosure supports a larger buffing pad 306 compared to conventional pre-clean modules, the larger buffing pad improving performance and reducing buffing time. The pad carrier assembly 304 includes a head motor 308 for rotating the buffing pad 306 and the buffing pad support surface about an axis c2 substantially aligned with the direction of gravity. The pad carrier assembly 304 includes a gimbal base 310 coupled to the head motor 308 by a spherical bearing 312 to allow the buffing pad support surface of the pad carrier assembly 304 to pivot relative to a plane perpendicular to the axis c2. For ease of disclosure, the pad conditioning station 280 is not shown in FIG. 4C for illustrative purposes, but would be located within the cavity 480.

[0049]

[0061] After CMP, the HPC module 200 is configured to clean the polishing slurry and debris before the substrate 120 dries. In some embodiments, the HPC module 200 replaces one or more cleaning steps performed by the multiple polishing stations of the first portion 105 of the processing system 100. The buffing pad 306 of the HPC module 200 has a smaller form factor than the polishing surface of the polishing station because it can perform cleaning locally as opposed to the material removal by CMP, which is performed globally across the entire surface of the substrate 120. In other words, the buffing pad 306 is smaller in diameter than the substrate 120 and is sized to perform localized buffing and is not designed to cover the entire surface of the substrate 120 at one time.

[0050]

[0062] The pad carrier positioning arm 300 includes a linear actuator 314, e.g., a pneumatic cylinder, coupled between the pad carrier assembly 304 and a proximal end 322 of the pad carrier positioning arm 300. The linear actuator 314 is configured to raise and lower the pad carrier assembly 304 along axis c2 to position the buffing pad 306 against a substrate 120 disposed on the rotatable vacuum table 230 or against a brush 282 of the pad conditioning station 280 such that the buffing pad 306 exerts an effective downward force thereon. In some embodiments, the pressure applied between the buffing pad 306 and the surface of the substrate 120 is about 0.5 psi or more, e.g., about 0.5 psi to about 4 psi, e.g., about 3 psi, or about 4 psi. In some embodiments, the thrust load of the downward force exerted by the buffing pad 306 against the substrate 120 is proportional to the pressure. In some embodiments, the thrust load is between about 0.5 lbf and about 100 lbf, such as between about 10 lbf and about 65 lbf. The underside of the pad carrier positioning arm 300 includes a chemical manifold 316 having a plurality of spray nozzles for dispensing chemicals (e.g., process fluids) onto the surface of the substrate 120.

[0051]

[0063] A proximal end 322 of the pad carrier positioning arm 300 is coupled to an actuator 324, e.g., a motor, configured to swing the pad carrier assembly 304 between a first position on the rotatable vacuum table 230 and a second position on the pad conditioning station 280. The pad carrier positioning arm 300 is configured to swing the pad carrier assembly 304 through a maintenance access panel opening 228 to facilitate maintenance access.

[0052]

[0064] In some embodiments, the downward force of the pad carrier assembly 304, the torque of the buffing pad 306, the torque of the substrate 120, and the holding and gripping force of the vacuum table 230 through the carrier film 264 are adjusted and controlled to optimize performance. In some embodiments, the torque of the buffing pad 306 is about 2 Nm or more, such as about 2 Nm to about 6 Nm, such as about 3 Nm to about 5 Nm. In some embodiments, the torque of the substrate 120 is about 10 Nm or more, such as about 10 Nm to about 30 Nm, such as about 15 Nm to about 25 Nm. In some embodiments, the holding force for the wet substrate 120 is about 25 lbf or more, such as about 30 lbf or more, such as about 30 lbf to about 40 lbf, such as about 30 lbf. In some embodiments, the edge lift grip force on a wet substrate is about 2 lbf or more, such as from about 2 lbf to about 3 lbf, such as from about 2 lbf to about 2.4 lbf.

[0053]

[0065] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, which scope is determined by the following claims.

Claims

1. 1. A substrate processing module comprising: a rotatable vacuum table disposed within a processing region of the substrate processing module, the rotatable vacuum table including a support surface including an array of channels; a pad conditioning station disposed proximate to said rotatable vacuum table; a pad carrier positioning arm coupled to the pad carrier assembly; and an actuator coupled to the pad carrier positioning arm, the actuator configured to position the pad carrier assembly over a first location disposed above the support surface of the rotatable vacuum table and over a second location disposed above the pad conditioning station; A substrate processing module comprising:

2. The substrate processing module of claim 1 , wherein an individual channel of the array of channels has a width of about 10 mm or less.

3. 3. The substrate processing module of claim 2, wherein a gripping area provided by the array of channels is between about 5% and about 30% of a surface area of ​​a substrate to be processed placed thereon, the gripping area including an effective area occupied by the array of channels in the support surface of the vacuum table.

4. The substrate processing module of claim 1 , wherein the pad carrier assembly is sized to support a buffing pad having a diameter of about 67 mm or greater.

5. The substrate processing module of claim 1 , wherein the support surface of the vacuum table is substantially perpendicular to a direction of gravity.

6. The substrate processing module of claim 1 , further comprising an annular substrate lift mechanism disposed radially outwardly of the vacuum table.

7. 7. The substrate processing module of claim 6, wherein the annular substrate lift mechanism comprises a plurality of substrate contact points disposed proximate a periphery of the vacuum table, and wherein the annular substrate lift mechanism is configured such that when lifting a substrate from the support surface of the vacuum table, one of the plurality of substrate contact points contacts the substrate before other of the plurality of substrate contact points.

8. 1. A method for processing a substrate, comprising: positioning a substrate on a vacuum table of a substrate processing module, the vacuum table including a support surface including an array of channels, the support surface of the vacuum table being substantially perpendicular to a direction of gravity, a grip area provided by the array of channels being between about 5% and about 30% of a surface area of ​​the substrate positioned thereon, the grip area including an effective area occupied by the array of channels in the support surface of the vacuum table; pressing a buffing pad against the surface of the substrate while rotating the vacuum table underneath, the buffing pad having a diameter of about 67 mm or greater and a pressure exerted between the buffing pad and the surface of the substrate being about 3 psi or greater; The method includes:

9. 9. The method of claim 8, further comprising a vacuum table film having the array of channels formed therethrough, the vacuum table film being secured to a chuck plate of the vacuum table with an adhesive, the chuck plate having a plurality of openings disposed on an upper surface thereof, the array of channels in the vacuum table film being aligned with corresponding ones of the openings disposed therebelow.

10. The vacuum table is disposed within a processing region of the substrate processing module, the substrate processing module comprising: a chamber including a container and a lid that together define said processing region; the vacuum table disposed within the processing region; a pad conditioning station disposed adjacent to said vacuum table; a pad carrier positioning arm coupled to the pad carrier; an actuator coupled to the pad carrier positioning arm, the actuator configured to position a pad carrier assembly over a first location disposed above the support surface of the vacuum table and over a second location disposed above the pad conditioning station; The method of claim 8 comprising:

11. 1. A modular substrate processing system comprising a substrate processing module, the substrate processing module comprising: a chamber comprising a container and a lid, the lid comprising a plurality of side panels that collectively define, with the container, a processing area; a rotatable vacuum table disposed within the processing region; a first substrate handler access door disposed in a first one of the side panels, the first substrate handler access door being used to position a substrate on the rotatable vacuum table with a first substrate handler; a second substrate handler access door disposed in a second one of the side panels, the second substrate handler access door being used to remove the substrate from the rotatable vacuum table with a second substrate handler; a pad conditioning station disposed proximate to said rotatable vacuum table; a pad carrier positioning arm coupled to the pad carrier assembly; and an actuator coupled to the pad carrier positioning arm, the actuator configured to position the pad carrier assembly over a first location disposed above the rotatable vacuum table and over a second location disposed above the pad conditioning station; A modular substrate processing system comprising:

12. 12. The modular substrate processing system of claim 11, wherein a third side panel of the plurality of side panels has a maintenance opening, and the pad carrier positioning arm is configured to position the pad carrier assembly through the maintenance opening to facilitate maintenance access.

13. a first substrate processing region including a plurality of polishing stations; a second substrate processing region including the substrate processing module and the first substrate handler, the first substrate handler positioned to transfer a substrate from the first substrate processing region to the substrate processing module; The modular substrate processing system of claim 11 further comprising:

14. The modular substrate processing system of claim 13 , wherein the second substrate processing region further comprises a substrate cleaning system, and the substrate processing module is disposed above the substrate cleaning system.

15. 15. The modular substrate processing system of claim 14, wherein the second substrate handler is positioned to transfer a substrate from the substrate processing module to a cleaning station of the substrate cleaning system located therebelow.

16. The modular substrate processing system of claim 11 , wherein the substrate processing module further comprises an annular substrate lift mechanism surrounding the vacuum table.

17. 17. The modular substrate processing system of claim 16, wherein the annular substrate lift mechanism comprises a plurality of substrate contact points disposed proximate a periphery of the vacuum table, and wherein the annular substrate lift mechanism is configured such that when lifting a substrate from a support surface of the vacuum table, one of the plurality of substrate contact points contacts the substrate before other of the plurality of substrate contact points.

18. 12. The modular substrate processing system of claim 11, wherein the vacuum table comprises an array of channels defined in a support surface thereof, each channel of the array of channels having a width of about 10 mm or less.

19. 20. The modular substrate processing system of claim 18, wherein a gripping area provided by the array of channels is between about 5% and about 30% of a surface area of ​​a substrate to be processed placed thereon, the gripping area including an effective area occupied by the array of channels in the support surface of the vacuum table.

20. 20. The modular substrate processing system of claim 19, wherein the pad carrier assembly is sized to support a buffing pad having a diameter of about 67 mm or greater.

Images