Substrate processing apparatus

Abstract

To provide a substrate processing apparatus which can reduce the consumption of a processing liquid.SOLUTION: A substrate processing apparatus (100) comprises a substrate holding part (2), a processing liquid supply part (4), a liquid film holding part (71), a moving part (8), and a control part (102). The substrate holding part (2) holds a substrate (W). The processing liquid supply part (4) supplies a processing liquid to the substrate (W) held by the substrate holding part (2). The liquid film holding part (71) is located above the substrate (W) held by the substrate holding part (2) and faces the substrate (W) so that it surrounds liquid films (LM1, LM2) of the processing liquid formed on the substrate (W) and holds the liquid films (LM1, LM2) of the processing liquid. Above the substrate (W), the moving part (8) vertically moves the liquid film holding part (71). The control part (102) controls the moving part (8) such that it changes the vertical position of the liquid film holding part (71).SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Single-wafer substrate processing apparatuses that process substrates with a processing liquid are known. This type of substrate processing apparatus includes a spin chuck and a nozzle (see, for example, Patent Document 1). The spin chuck holds the substrate in a horizontal position. The spin chuck rotates the substrate around its center. The nozzle ejects the processing liquid toward the center of the rotating substrate. As a result, the processing liquid spreads along the upper surface of the substrate due to centrifugal force, and a liquid film of the processing liquid is formed on the upper surface of the substrate, thereby processing the substrate.

[0003] However, when the surface of the substrate is hydrophobic, a part of the periphery of the upper surface of the substrate may not be covered with a liquid film. In contrast, the substrate processing apparatus of Patent Document 1 faces an annular member to the periphery of the upper surface of the substrate so that the entire upper surface of the substrate is covered with a liquid film. More specifically, the lower surface of the annular member is hydrophilic. As a result, even if the surface of the substrate is hydrophobic, the hydrophilic lower surface of the annular member can cover the periphery of the upper surface of the substrate with a liquid film. Therefore, the entire upper surface of the substrate can be covered with a liquid film. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2012-94836 A Summary of the Invention [Problem to be solved by the invention]

[0005] However, in the substrate processing apparatus of Patent Document 1, when the substrate is processed with the processing liquid, the processing liquid passes between the peripheral portion of the upper surface of the substrate and the lower surface of the annular member, and is discharged to the outside of the substrate. Therefore, it is difficult to reduce the consumption of the processing liquid. Therefore, in consideration of the consumption of the processing liquid, there is room for further improvement.

[0006] The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus capable of reducing the consumption of processing liquid. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a substrate holding unit, a processing liquid supply unit, a liquid film holding unit, a moving unit, and a control unit. The substrate holding unit holds the substrate. The processing liquid supply unit supplies processing liquid to the substrate held by the substrate holding unit. The liquid film holding unit is located above the substrate held by the substrate holding unit and faces the substrate, surrounding a liquid film of the processing liquid formed on the substrate and holding the liquid film of the processing liquid. The moving unit moves the liquid film holding unit in a vertical direction above the substrate. The control unit controls the moving unit to change the vertical position of the liquid film holding unit.

[0008] In one embodiment, the liquid film holding unit has a liquid contact surface that comes into contact with the treatment liquid, and the liquid contact surface has water repellency with respect to the treatment liquid.

[0009] In one embodiment, the substrate processing apparatus further includes a substrate rotation unit that rotates the substrate held by the substrate holding unit. The processing liquid includes a chemical liquid. When a liquid film of the chemical liquid is held by the liquid film holding unit, the control unit controls the substrate rotation unit to perform a paddle process that stops the rotation of the substrate or a paddle process that rotates the substrate at a rotation speed that does not cause the chemical liquid to be discharged outside the substrate.

[0010] In one embodiment, the chemical liquid includes a first chemical liquid and a second chemical liquid. The control unit controls the processing liquid supply unit during the puddle process to generate a mixed liquid of the first chemical liquid and the second chemical liquid on the substrate. The control unit controls the moving unit after the puddle process to move the liquid film holding unit from a paddle position where the liquid film of the mixed liquid is held to a retracted position that is above the paddle position and does not surround the liquid film of the mixed liquid. After moving the liquid film holding unit to the retracted position, the control unit controls the processing liquid supply unit to supply the second chemical liquid to the substrate and discharge the mixed liquid from the substrate to form a liquid film of the second chemical liquid on the substrate.

[0011] In one embodiment, after moving the liquid film holding unit to the retracted position, the control unit controls the substrate rotation unit to rotate the substrate at a rotation speed that reduces the amount of the mixed liquid on the substrate.

[0012] In one embodiment, the second chemical liquid has a lower temperature than the first chemical liquid.

[0013] In one embodiment, the processing liquid supply unit includes a shower nozzle that ejects the second chemical liquid toward the substrate in a shower shape.

[0014] In one embodiment, the processing liquid supply unit discharges the first chemical liquid from the shower nozzle.

[0015] In one embodiment, the processing liquid supply unit includes a discharge nozzle and a nozzle movement unit. The discharge nozzle discharges the second chemical liquid toward the substrate. The nozzle movement unit moves the discharge nozzle above the substrate held by the substrate holding unit. During the puddle processing, the control unit controls the nozzle movement unit to move the discharge nozzle while controlling the processing liquid supply unit to discharge the second chemical liquid from the discharge nozzle.

[0016] In one embodiment, the processing liquid supply unit discharges the first chemical liquid from the discharge nozzle.

[0017] In one embodiment, the substrate holder includes a support member for supporting the substrate, and the control unit causes the support member to support the substrate when the puddle process is performed.

[0018] In one embodiment, the substrate holder includes a support member for supporting the substrate, and the control unit causes the support member to support the substrate when discharging the mixed liquid from the substrate.

[0019] In one embodiment, the processing liquid supply unit further supplies a rinsing liquid to the substrate held by the substrate holding unit. The control unit controls the moving unit to move the liquid film holding unit from the retracted position to a cleaning position that is a position below the retracted position. The liquid film holding unit is located at the cleaning position when the rinsing liquid is supplied. The cleaning position is a position above the paddle position and surrounds a liquid film of the rinsing liquid.

[0020] In one embodiment, the substrate processing apparatus further includes a drying unit configured to dry the liquid film holding unit, and the control unit controls the moving unit to move the liquid film holding unit from the cleaning position to a drying position above the cleaning position, and then controls the drying unit to dry the liquid film holding unit.

[0021] In one embodiment, the processing liquid supply unit further supplies a rinsing liquid to the substrate held by the substrate holding unit. The control unit controls the moving unit to move the liquid film holding unit from a paddle position where the liquid film of the chemical liquid is held to a cleaning position that is a position above the paddle position. The liquid film holding unit is located at the cleaning position when the rinsing liquid is supplied. The cleaning position is a position that surrounds the liquid film of the rinsing liquid.

[0022] In one embodiment, the processing liquid supply unit further supplies a rinsing liquid to the substrate held by the substrate holding unit. The control unit controls the moving unit to move the liquid film holding unit from a paddle position where the liquid film of the chemical liquid is held to a retracted position that is a position above the paddle position and does not surround the liquid film of the chemical liquid, and then controls the processing liquid supply unit to supply the rinsing liquid to the substrate. The control unit controls the moving unit to move the liquid film holding unit from the retracted position to a cleaning position that is a position above the paddle position while the rinsing liquid is being supplied. The cleaning position is a position that surrounds the liquid film of the rinsing liquid.

[0023] In one embodiment, the substrate holder includes a support member for supporting the substrate, and the control unit causes the support member to support the substrate when the rinsing liquid is supplied.

[0024] In one embodiment, the rinsing liquid has a lower temperature than the processing liquid.

[0025] In one embodiment, the substrate processing apparatus further includes a blocking member configured to block an area above the substrate held by the substrate holding unit, the blocking member including the liquid film holding unit, and the moving unit configured to move the blocking member.

[0026] In one embodiment, the substrate processing apparatus further includes a blocking member that blocks an area above the substrate held by the substrate holding unit. The blocking member includes the liquid film holding unit and a support unit that supports the liquid film holding unit. The support unit faces the substrate and blocks an area above the substrate. The moving unit moves the blocking member. The processing liquid supply unit includes a shower nozzle provided on the support unit. The shower nozzle ejects the second chemical liquid in a shower-like manner toward the substrate.

[0027] In one embodiment, the substrate processing apparatus further includes a cup portion and a blocking member. The cup portion surrounds the substrate held by the substrate holding portion and receives the first chemical liquid and the second chemical liquid discharged from the substrate. The blocking member blocks an area above the substrate held by the substrate holding portion. The blocking member includes the liquid film holding portion. The moving portion moves the blocking member. The retracted position is a position inside the cup portion.

[0028] In one embodiment, the substrate processing apparatus further includes an exhaust unit that exhausts gas from a space between the blocking member and the substrate.

[0029] In one embodiment, the substrate processing apparatus further includes a blocking member that blocks an area above the substrate held by the substrate holding part. The moving part moves the blocking member. The blocking member includes the liquid film holding part and a support part that supports the liquid film holding part. The support part faces the substrate and blocks an area above the substrate. The support part has a nozzle insertion hole. The processing liquid supply part includes an insertion nozzle that is inserted into the nozzle insertion hole. The insertion nozzle, when inserted into the nozzle insertion hole, ejects at least one of the first chemical liquid and the second chemical liquid toward the substrate.

[0030] In one embodiment, the substrate processing apparatus further includes an exhaust unit configured to exhaust gas from a space between the blocking member and the substrate, the exhaust unit including a suction nozzle inserted into the nozzle insertion hole, the suction nozzle being inserted into the nozzle insertion hole to suck gas from the space between the blocking member and the substrate.

[0031] In one embodiment, the substrate processing apparatus further includes a cup portion, a space forming portion, and a blocking member. The cup portion surrounds the substrate held by the substrate holding portion and receives the first chemical liquid and the second chemical liquid discharged from the substrate. The space forming portion, together with the cup portion, forms a space around the substrate held by the substrate holding portion. The blocking member blocks an area above the substrate held by the substrate holding portion. The blocking member includes the liquid film holding portion. The liquid film holding portion moves vertically inside the space forming portion. Effect of the Invention

[0032] According to the substrate processing apparatus of the present invention, the consumption of processing liquid can be reduced. [Brief description of the drawings]

[0033] [Figure 1] 1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 2] 1 is a diagram illustrating a schematic configuration of the inside of a substrate processing section included in a substrate processing apparatus according to a first embodiment of the present invention. [Diagram 3] 1A is a diagram showing a ring member located at a paddle position, and FIG. 1B is a diagram showing a movement trajectory of a discharge nozzle included in the substrate processing apparatus according to the first embodiment of the present invention. [Figure 4] 1A is an enlarged schematic view of the ring member at the paddle position, FIG. 1B is an enlarged schematic view of the ring member at the retracted position, and FIG. 1C is an enlarged schematic view of the ring member at the cleaning position. [Diagram 5] 1A is a diagram showing a first state of a substrate holding unit included in the substrate processing apparatus according to the first embodiment of the present invention, and FIG. 1B is a diagram showing a second state of a substrate holding unit included in the substrate processing apparatus according to the first embodiment of the present invention. [Figure 6] 5A to 5C are diagrams illustrating an operation of a substrate holding unit included in the substrate processing apparatus according to the first embodiment of the present invention. [Figure 7]5 is a flowchart showing an example of the operation of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 8] 5 is a flowchart showing an example of the operation of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 9] 5 is a flowchart showing an example of the operation of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 10] 6 is a flowchart showing another example of the operation of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 11] 6 is a flowchart showing another example of the operation of the substrate processing apparatus according to the first embodiment of the present invention. [Figure 12] FIG. 11 is a diagram illustrating an internal configuration of a substrate processing section included in a substrate processing apparatus according to a second embodiment of the present invention. [Figure 13] FIG. 11 is a diagram illustrating an internal configuration of a substrate processing section included in a substrate processing apparatus according to a third embodiment of the present invention. [Figure 14] 11 is a flowchart showing an example of the operation of the substrate processing apparatus according to the third embodiment of the present invention. [Figure 15] 11 is a flowchart showing an example of the operation of the substrate processing apparatus according to the third embodiment of the present invention. [Figure 16] FIG. 11 is a diagram illustrating an internal configuration of a substrate processing section included in a substrate processing apparatus according to a fourth embodiment of the present invention. [Figure 17] FIG. 11 is a diagram illustrating an internal configuration of a substrate processing section included in a substrate processing apparatus according to a fourth embodiment of the present invention. [Figure 18] 1A is an enlarged schematic diagram of the cutoff part located at the paddle position, and FIG. [Figure 19] 1A is an enlarged schematic view of the blocking section when it is positioned at the retracted position, and FIG. 1B is an enlarged schematic view of the blocking section when it is positioned at the cleaning position. [Figure 20] 10 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fourth embodiment of the present invention. [Figure 21] 10 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fourth embodiment of the present invention. [Figure 22] 10 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fourth embodiment of the present invention. [Diagram 23] FIG. 13 is a diagram showing another example of the interrupter portion. [Figure 24] FIG. 11 is a diagram illustrating an internal configuration of a substrate processing section included in a substrate processing apparatus according to a fifth embodiment of the present invention. [Diagram 25] FIG. 11 is a diagram showing the configuration of a substrate processing section included in a substrate processing apparatus according to a fifth embodiment of the present invention. [Figure 26] 13 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fifth embodiment of the present invention. [Figure 27] 13 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fifth embodiment of the present invention. [Figure 28] 13 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fifth embodiment of the present invention. [Figure 29] 13 is a flowchart showing an example of the operation of the substrate processing apparatus according to the fifth embodiment of the present invention. [Diagram 30] FIG. 13 is a diagram illustrating a schematic internal configuration of a first alternative example of a substrate processing section included in a substrate processing apparatus according to a fifth embodiment of the present invention. [Diagram 31] FIG. 13 is a diagram illustrating a schematic internal configuration of a second alternative example of a substrate processing section included in a substrate processing apparatus according to a fifth embodiment of the present invention. [Diagram 32] FIG. 13 is a diagram illustrating an internal configuration of a substrate processing section included in a substrate processing apparatus according to a sixth embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0034] Hereinafter, an embodiment of the substrate processing apparatus of the present invention will be described with reference to the drawings (FIGS. 1 to 32). However, the present invention is not limited to the following embodiment, and can be embodied in various forms without departing from the gist of the present invention. Note that where the description is repeated, it may be omitted as appropriate. Also, in the drawings, the same or corresponding parts are denoted by the same reference symbols, and description will not be repeated.

[0035] The "substrate" to be processed in the substrate processing apparatus according to the present invention can be a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. In the following, an embodiment of the present invention will be described mainly taking as an example a case in which a disk-shaped semiconductor wafer is the substrate to be processed, but the substrate processing apparatus according to the present invention can be similarly applied to various substrates other than the above-mentioned semiconductor wafer. Furthermore, the shape of the substrate is not limited to a disk shape, and the substrate processing apparatus according to the present invention can be applied to substrates of various shapes.

[0036] [Embodiment 1] First, a first embodiment of the present invention will be described with reference to Figs. 1 to 11. Fig. 1 is a schematic plan view of a substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 processes substrates W. More specifically, the substrate processing apparatus 100 is a single-wafer type apparatus, and processes substrates W one by one using a processing liquid. Hereinafter, the processing of substrates W using a processing liquid may be referred to as "substrate processing".

[0037] As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 200, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101.

[0038] Each load port LP accommodates a stack of substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the substrate processing unit 200. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the apparatus may be configured to indirectly transfer the substrate W between the indexer robot IR and the center robot CR via the placement stage.

[0039] The multiple substrate processing units 200 form multiple towers TW (four towers TW in FIG. 1). The multiple towers TW are arranged to surround the center robot CR in a plan view. Each tower TW is formed by multiple substrate processing units 200 (three substrate processing units 200 in FIG. 1) stacked one on top of the other.

[0040] Each of the substrate processing units 200 supplies a processing liquid to the upper surface of the substrate W. As a result, the substrate W is processed. The processing liquid includes a chemical liquid and a rinse liquid. In this embodiment, the processing liquid is sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ). The rinse liquid includes, for example, pure water (e.g., deionized water (DIW)), carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, or diluted hydrochloric acid water (e.g., hydrochloric acid water with a concentration of about 10 ppm to 100 ppm). More specifically, the substrate processing unit 200 executes a puddle process, an SPM process, a liquid film replacement process, a rinsing process, a substrate drying process, and a ring drying process.

[0041] In this embodiment, the puddle process refers to a process of forming a puddle state in which the sulfuric acid liquid film LM1 is supported on the upper surface of the substrate W. By the puddle process, the sulfuric acid liquid film LM1 in the puddle state is maintained on the substrate W. More specifically, the substrate processing unit 200 holds the sulfuric acid liquid film LM1 in the puddle state using a ring member 71 shown in FIG.

[0042] The SPM process refers to a process in which a sulfuric acid hydrogen peroxide mixture (SPM) is generated on the upper surface of the substrate W to remove a resist film adhering to the upper surface of the substrate W. By the SPM process, an SPM liquid film LM2 is formed on the upper surface of the substrate W. The SPM is a mixture of sulfuric acid and hydrogen peroxide. The SPM process is performed during the puddle process.

[0043] The liquid film replacement process refers to a process of replacing the liquid film of the processing liquid formed on the upper surface of the substrate W from the liquid film LM2 of SPM to a liquid film LM3 of hydrogen peroxide solution.

[0044] The rinsing process refers to a process for washing away the chemical liquid from the upper surface of the substrate W. By the rinsing process, a liquid film LM4 of the rinsing liquid is formed on the upper surface of the substrate W. Furthermore, by the rinsing process, the ring member 71 shown in FIG. 2 is cleaned.

[0045] The substrate drying process refers to a process for drying the substrate W. Specifically, the substrate drying process causes the rinsing liquid to be discharged from the upper surface of the substrate W to dry the substrate W. The ring drying process refers to a process for drying the ring member 71 shown in FIG.

[0046] The controller 101 controls the operation of each part of the substrate processing apparatus 100. For example, the controller 101 controls the load port LP, the indexer robot IR, the center robot CR, and the substrate processing part 200. The controller 101 includes a control part 102 and a storage part 103.

[0047] The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on various information stored in the storage unit 103. The control unit 102 has, for example, a processor. The control unit 102 includes a CPU (Central Processing Unit) or an MPU (Micro Processing Unit) as the processor. Alternatively, the control unit 102 may have a general-purpose computing device or a dedicated computing device.

[0048] The storage unit 103 stores various information for controlling the operation of the substrate processing apparatus 100. For example, the storage unit 103 stores data and computer programs. The data includes various recipe data. The recipe data includes a process recipe. The process recipe is data that specifies a procedure for substrate processing.

[0049] The storage unit 103 includes a main storage device. The main storage device includes, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may include a removable medium.

[0050] Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to Figures 1, 2, 3(a) and 3(b). Figure 2 is a diagram showing a schematic internal configuration of a substrate processing section 200 included in the substrate processing apparatus 100 of the present embodiment.

[0051] 2, the substrate processing unit 200 includes a processing chamber 200a, a substrate holding unit 2, a substrate rotating unit 3, a nozzle moving unit 5, a cup unit 6, a paddle forming unit 7, a ring moving unit 8, and an exhaust unit 201. The substrate processing apparatus 100 further includes a processing liquid supply unit 4 and a drying unit 9.

[0052] The substrate W is loaded into the processing chamber 200a and processed therein. The processing chamber 200a has a substantially box-like shape. The processing chamber 200a accommodates a substrate holding unit 2, a substrate rotating unit 3, a nozzle moving unit 5, a cup unit 6, a paddle forming unit 7, a ring moving unit 8, a part of an exhaust unit 201, a part of a processing liquid supply unit 4, and a part of a drying unit 9. The processing chamber 200a is, for example, a chamber.

[0053] The substrate holding part 2 holds the substrate W. The operation of the substrate holding part 2 is controlled by the control device 101 (control part 102). More specifically, the substrate holding part 2 holds the substrate W in a horizontal position. In this embodiment, the substrate holding part 2 is a spin chuck. The substrate holding part 2 has a plurality of gripping members 21 and a spin base 22.

[0054] The spin base 22 is substantially disk-shaped and supports the multiple gripping members 21 in a horizontal position. The multiple gripping members 21 are arranged on the periphery of the spin base 22. The multiple gripping members 21 grip the substrate W. More specifically, the multiple gripping members 21 clamp the periphery of the substrate W. The multiple gripping members 21 hold the substrate W in a horizontal position. The multiple gripping members 21 are arranged such that the center of the substrate W coincides with the center of the spin base 22.

[0055] The substrate rotating unit 3 rotates the substrate holding unit 2, thereby rotating the substrate W held by the substrate holding unit 2. Specifically, the substrate rotating unit 3 rotates the substrate W and the substrate holding unit 2 together around a first rotation axis AX1 that extends in the vertical direction. The operation of the substrate rotating unit 3 is controlled by the control device 101 (control unit 102).

[0056] More specifically, the first rotation axis AX1 passes through the center of the spin base 22. Therefore, the spin base 22 rotates about the center of the spin base 22. As already described, the substrate holding unit 2 holds the substrate W such that the center of the substrate W coincides with the center of the spin base 22. Therefore, the substrate W rotates about the center of the substrate W.

[0057] The substrate rotating unit 3 has, for example, a shaft 31 and a motor body 32. The shaft 31 is coupled to the spin base 22. The motor body 32 rotates the shaft 31. As a result, the spin base 22 rotates. The operation of the motor body 32 is controlled by the control device 101 (control unit 102). The motor body 32 is, for example, an electric motor.

[0058] The processing liquid supply unit 4 supplies a processing liquid to the upper surface of the substrate W held by the substrate holding unit 2. In this embodiment, the processing liquid supply unit 4 includes a first processing liquid supply unit 41 and a second processing liquid supply unit 42. The first processing liquid supply unit 41 exclusively supplies sulfuric acid and hydrogen peroxide to the upper surface of the substrate W held by the substrate holding unit 2. The second processing liquid supply unit 42 supplies a rinsing liquid to the upper surface of the substrate W held by the substrate holding unit 2. In this embodiment, sulfuric acid is an example of a "first chemical liquid" and hydrogen peroxide is an example of a "second chemical liquid".

[0059] In detail, the first processing liquid supply unit 41 has a discharge nozzle 41a, a first supply pipe 411, a second supply pipe 412, a first on-off valve 413, a second on-off valve 414, and a flow rate control valve 415. The discharge nozzle 41a is accommodated in the processing chamber 200a. Therefore, the substrate processing unit 200 has the discharge nozzle 41a. A part of the first supply pipe 411 is accommodated in the processing chamber 200a. The remaining part of the first supply pipe 411 is disposed outside the processing chamber 200a. The second supply pipe 412, the first on-off valve 413, the second on-off valve 414, and the flow rate control valve 415 are disposed outside the processing chamber 200a.

[0060] The first supply pipe 411 and the second supply pipe 412 are tubular members through which the processing liquid flows. The downstream end of the first supply pipe 411 is connected to the discharge nozzle 41a. The first on-off valve 413 is provided on the first supply pipe 411. The downstream end of the second supply pipe 412 is connected to the first supply pipe 411 downstream of the first on-off valve 413. The second on-off valve 414 is provided on the second supply pipe 412. The first on-off valve 413 and the second on-off valve 414 can be opened and closed. The opening and closing operations of the first on-off valve 413 and the second on-off valve 414 are controlled by the control device 101 (control unit 102).

[0061] Sulfuric acid is supplied to the upstream end of the first supply pipe 411. Hydrogen peroxide solution is supplied to the upstream end of the second supply pipe 412. The discharge nozzle 41a discharges sulfuric acid and hydrogen peroxide solution toward the upper surface of the substrate W exclusively.

[0062] Specifically, when sulfuric acid is discharged from the discharge nozzle 41a, the control device 101 (control unit 102) opens the first on-off valve 413 and closes the second on-off valve 414 to allow the sulfuric acid to flow through the first supply pipe 411. As a result, the sulfuric acid is supplied to the discharge nozzle 41a and discharged from the discharge nozzle 41a.

[0063] When discharging hydrogen peroxide solution from discharge nozzle 41a, control device 101 (control unit 102) closes first on-off valve 413 and opens second on-off valve 414 to allow hydrogen peroxide solution to flow from second supply piping 412 to first supply piping 411. As a result, hydrogen peroxide solution flows through first supply piping 411, is supplied to discharge nozzle 41a, and is discharged from discharge nozzle 41a.

[0064] The control device 101 (control unit 102) closes the first on-off valve 413 and the second on-off valve 414 when stopping the discharge of the processing liquid (sulfuric acid and hydrogen peroxide) from the discharge nozzle 41a.

[0065] The flow rate control valve 415 is provided in the second supply pipe 412 and adjusts the flow rate of the hydrogen peroxide solution flowing through the second supply pipe 412. Specifically, the opening degree of the flow rate control valve 415 can be controlled, and the flow rate of the hydrogen peroxide solution flowing through the second supply pipe 412 corresponds to the opening degree of the flow rate control valve 415. The flow rate control valve 415 includes, for example, a motor needle valve. The opening degree of the flow rate control valve 415 is controlled by the control device 101 (control unit 102). The control device 101 (control unit 102) controls the opening degree of the flow rate control valve 415 to control the flow rate of the hydrogen peroxide solution discharged from the discharge nozzle 41a to the substrate W.

[0066] For example, the control device 101 (control unit 102) increases the flow rate of hydrogen peroxide when transitioning from the SPM process to the liquid film replacement process. By increasing the flow rate of hydrogen peroxide during the liquid film replacement process, the time required for the liquid film replacement process can be shortened compared to when the flow rate of hydrogen peroxide is constant between the SPM process and the liquid film replacement process.

[0067] The nozzle moving unit 5 moves the discharge nozzle 41a in the vertical and horizontal directions above the substrate W. Specifically, the nozzle moving unit 5 has a nozzle arm 51, a nozzle base 52, and a nozzle moving mechanism 53.

[0068] The nozzle arm 51 is coupled to the nozzle base 52 and extends horizontally from the nozzle base 52. The nozzle arm 51 supports the discharge nozzle 41a. For example, the discharge nozzle 41a is coupled to the tip end of the nozzle arm 51. The nozzle base 52 extends vertically.

[0069] The nozzle moving mechanism 53 moves the nozzle arm 51 in the vertical and horizontal directions. As a result, the discharge nozzle 41a moves in the vertical and horizontal directions. The nozzle moving mechanism 53 is controlled by the control device 101 (control unit 102).

[0070] Specifically, the nozzle movement mechanism 53 swings the nozzle base 52 about a second rotation axis AX2 extending in the vertical direction, causing the nozzle arm 51 to swing along the horizontal plane. As a result, the discharge nozzle 41a moves along the horizontal plane. The nozzle movement mechanism 53 also raises and lowers the nozzle base 52 in the vertical direction, causing the nozzle arm 51 to rise and lower. As a result, the discharge nozzle 41a moves in the vertical direction. The nozzle movement mechanism 53 includes, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor drives the ball screw mechanism.

[0071] The second processing liquid supply unit 42 includes a rinse nozzle 42a, a rinse supply pipe 421, and a rinse on-off valve 422. The rinse nozzle 42a is accommodated in the processing chamber 200a. Thus, the substrate processing unit 200 includes the rinse nozzle 42a. A portion of the rinse supply pipe 421 is accommodated in the processing chamber 200a. The remaining portion of the rinse supply pipe 421 is disposed outside the processing chamber 200a. The rinse on-off valve 422 is disposed outside the processing chamber 200a.

[0072] The rinse supply pipe 421 is a tubular member through which the processing liquid flows. A downstream end of the rinse supply pipe 421 is connected to the rinse nozzle 42a. The rinse on-off valve 422 is provided in the rinse supply pipe 421. The rinse on-off valve 422 can be opened and closed. The opening and closing operation of the rinse on-off valve 422 is controlled by the control device 101 (control unit 102).

[0073] A rinsing liquid is supplied to the upstream end of the rinse supply pipe 421. The rinse nozzle 42a ejects the rinsing liquid toward the upper surface of the substrate W. In this embodiment, the rinse nozzle 42a is a fixed nozzle and ejects the rinsing liquid from a fixed position. In detail, when ejecting the rinsing liquid from the rinse nozzle 42a, the control device 101 (controller 102) opens the rinse on-off valve 422 to circulate the rinsing liquid through the rinse supply pipe 421. As a result, the rinsing liquid is supplied to the rinse nozzle 42a and ejected from the rinse nozzle 42a.

[0074] The cup part 6 surrounds the substrate W held by the substrate holding part 2 and receives the processing liquids (sulfuric acid, hydrogen peroxide solution, and rinsing liquid) discharged from the substrate W. Specifically, the cup part 6 is disposed outward of the substrate W held by the substrate holding part 2. The cup part 6 has a substantially cylindrical shape. The cup part 6 is movable in the vertical direction.

[0075] In detail, the substrate processing unit 200 has a cup moving unit (not shown). The cup moving unit raises and lowers the cup unit 6. The cup moving unit is controlled by the control device 101 (control unit 102). For example, the cup unit 6 is located at a lower position when the substrate W is loaded into the processing chamber 200a. At this time, the upper end 6a of the cup unit 6 is located below the upper surface of the spin base 22. When the substrate W is held by the substrate holding unit 2, the control device 101 (control unit 102) controls the cup moving unit to move the cup unit 6 to an upper position. As a result, the upper end 6a of the cup unit 6 moves above the upper surface of the substrate W. In this way, by moving the upper end 6a of the cup unit 6 above the upper surface of the substrate W, the processing liquid (sulfuric acid, hydrogen peroxide solution, and rinse liquid) discharged from the substrate W can be received by the cup unit 6. When the substrate W is unloaded from the processing chamber 200a, the control device 101 (control unit 102) controls the cup moving unit to move the cup unit 6 from the upper position to the lower position.

[0076] The paddle forming part 7 holds a liquid film of the processing liquid formed on the substrate W. Specifically, the paddle forming part 7 has a ring member 71, two ring supporting parts 72, and a connecting part 73.

[0077] The ring member 71 is an annular member. The ring member 71 is located above the substrate W held by the substrate holding portion 2 and faces the substrate W. Each of the ring supports 72 supports the ring member 71. The ring supports 72 are rod-shaped members. The ring member 71 is connected to the lower ends of the ring supports 72. Each of the ring supports 72 extends upward from the ring member 71. The connecting portion 73 is a rod-shaped member connected to the two ring supports 72. For example, the connecting portion 73 may be connected to the upper ends of the two ring supports 72.

[0078] The ring moving part 8 moves the paddle forming part 7 in the vertical direction above the substrate W. Specifically, the ring moving part 8 is controlled by the control device 101 (control part 102) to raise and lower the paddle forming part 7. The control device 101 (control part 102) controls the ring moving part 8 to change the vertical position of the ring member 71. The ring moving part 8 has a ring arm 81, a ring base 82, and a ring moving mechanism 83.

[0079] The ring arm 81 is coupled to the ring base 82 and extends horizontally from the ring base 82. The ring arm 81 supports the paddle forming portion 7. For example, the tip of the ring arm 81 is coupled to the connection portion 73 of the paddle forming portion 7. The ring base 82 extends vertically.

[0080] The ring moving mechanism 83 moves the ring arm 81 in the vertical direction. As a result, the paddle forming part 7 moves in the vertical direction. That is, the paddle forming part 7 moves up and down. The ring moving mechanism 83 is controlled by the control device 101 (control part 102).

[0081] Specifically, the ring movement mechanism 83 raises and lowers the ring base 82 in the vertical direction, thereby raising and lowering the ring arm 81. As a result, the paddle forming part 7 moves in the vertical direction. The ring movement mechanism 83 includes, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor drives the ball screw mechanism.

[0082] The ring member 71 is located at the standby position P1 when the substrate W is loaded into the processing chamber 200a. FIG. 2 shows the ring member 71 located at the standby position P1. The standby position P1 is a position above the substrate holder 2. Before performing the paddle process, the control device 101 (control unit 102) controls the ring moving unit 8 to move the ring member 71 from the standby position P1 to the paddle position P2. The paddle position P2 is a position below the standby position P1. The paddle position P2 will be described later with reference to FIG. 3(a) and FIG. 4(a). The control device 101 (control unit 102) also controls the ring moving unit 8 to move the ring member 71 to the retreat position P3 and the cleaning position P4. The retreat position P3 will be described later with reference to FIG. 4(b). The cleaning position P4 will be described later with reference to FIG. 4(c).

[0083] The drying unit 9 dries the ring member 71. In this embodiment, the drying unit 9 dries the ring member 71 by blowing gas onto the ring member 71. The gas includes, for example, an inert gas such as nitrogen gas.

[0084] Specifically, the drying unit 9 dries the ring member 71 when the ring member 71 is located at the drying position. The drying position is a position above the paddle position P2. In this embodiment, the drying position is the same position as the standby position P1. However, the drying position may be a position different from the standby position P1.

[0085] In detail, the drying unit 9 has a drying nozzle 9a, a gas supply pipe 9b, and a gas on-off valve 9c. The drying nozzle 9a is accommodated in the processing chamber 200a. Therefore, the substrate processing unit 200 has the drying nozzle 9a. A part of the gas supply pipe 9b is accommodated in the processing chamber 200a. The remaining part of the gas supply pipe 9b is disposed outside the processing chamber 200a. The gas on-off valve 9c is disposed outside the processing chamber 200a.

[0086] The gas supply pipe 9b is a tubular member through which gas flows. The downstream end of the gas supply pipe 9b is connected to the drying nozzle 9a. The gas on-off valve 9c is provided on the gas supply pipe 9b. The gas on-off valve 9c can be opened and closed. The opening and closing operation of the gas on-off valve 9c is controlled by the control device 101 (control unit 102).

[0087] Gas is supplied to the upstream end of the gas supply pipe 9b. The drying nozzle 9a discharges gas toward the ring member 71 to dry the ring member 71. Specifically, when drying the ring member 71, the control device 101 (control unit 102) opens the gas on-off valve 9c to allow gas to flow through the gas supply pipe 9b. As a result, gas is supplied to the drying nozzle 9a and discharged from the drying nozzle 9a.

[0088] The exhaust unit 201 is disposed at the bottom of the processing chamber 200a. The exhaust unit 201 exhausts gas from within the processing chamber 200a. The exhaust unit 201 has an exhaust duct 202 and an exhaust fan 203. The exhaust fan 203 is disposed in the exhaust duct 202. The exhaust fan 203 exhausts gas from the processing chamber 200a. Specifically, when the exhaust fan 203 is driven, gas from within the processing chamber 200a flows into the exhaust duct 202. As a result, gas exhausted from the processing chamber 200a flows through the exhaust duct 202.

[0089] The exhaust duct 202 guides the gas to an exhaust facility provided in a factory in which the substrate processing apparatus 100 is installed. Therefore, when the exhaust fan 203 is driven, the gas in the processing chamber 200a is guided through the exhaust duct 202 to the exhaust facility.

[0090] FIG. 3(a) is a diagram showing the ring member 71 located at the paddle position P2. As shown in FIG. 3(a), when the ring member 71 is located at the paddle position P2, it is close to the upper surface of the substrate W held by the substrate holding part 2. More specifically, the paddle position P2 is a position where the ring member 71 surrounds the liquid film of the processing liquid formed on the substrate W. The ring member 71 surrounds the liquid film of the processing liquid formed on the upper surface of the substrate W by moving to the paddle position P2, and holds the liquid film of the processing liquid. In this embodiment, the ring member 71 is located at the paddle position P2 when the paddle process is performed, and surrounds the liquid film LM1 of sulfuric acid. Also, the ring member 71 is located at the paddle position P2 when the SPM process is performed, and surrounds the liquid film LM2 of SPM. The ring member 71 is an example of a "liquid film holding part".

[0091] 3(b) is a diagram showing a movement trajectory TJ of the discharge nozzle 41a included in the substrate processing apparatus 100 of this embodiment. As shown in FIG. 3(b), the nozzle moving unit 5 moves the discharge nozzle 41a horizontally along an arc-shaped movement trajectory TJ passing through a position facing the center position CT of the substrate W.

[0092] When discharging sulfuric acid from the discharge nozzle 41a, the control device 101 (control unit 102) controls the nozzle moving unit 5 to move the discharge nozzle 41a to a position facing the center position CT of the substrate W held by the substrate holding unit 2. Then, the control device 101 (control unit 102) controls the first processing liquid supply unit 41 to discharge sulfuric acid from the discharge nozzle 41a. As a result, the discharge nozzle 41a discharges sulfuric acid toward the center of the substrate W from the position facing the center position CT of the substrate W.

[0093] When discharging hydrogen peroxide from the discharge nozzle 41a, the control device 101 (control unit 102) controls the nozzle moving unit 5 to move the discharge nozzle 41a above the substrate W held by the substrate holding unit 2, while controlling the first processing liquid supply unit 41 to discharge hydrogen peroxide from the discharge nozzle 41a. As a result, the discharge nozzle 41a discharges hydrogen peroxide while moving horizontally above the substrate W.

[0094] Specifically, the discharge nozzle 41a discharges hydrogen peroxide water in a continuous flow while moving in the horizontal direction above the substrate W during SPM processing. Specifically, the movement trajectory TJ passes through two of the positions facing the end EG of the substrate W. Hereinafter, the position facing the end EG of the substrate W may be referred to as the "end facing position." The control device 101 (control unit 102) may cause the discharge nozzle 41a to discharge hydrogen peroxide water while moving the discharge nozzle 41a between the two end facing positions. That is, the control device 101 (control unit 102) may cause the discharge nozzle 41a to perform a full scan. Alternatively, the control device 101 (control unit 102) may cause the discharge nozzle 41a to discharge hydrogen peroxide water while moving the discharge nozzle 41a between one of the two end facing positions and a position facing the center position CT of the substrate W. That is, the control device 101 (control unit 102) may cause the discharge nozzle 41a to perform a half scan.

[0095] During the liquid film replacement process, the discharge nozzle 41a discharges a continuous flow of hydrogen peroxide solution from a position facing the center position CT of the substrate W. Specifically, the control device 101 (control unit 102) controls the nozzle moving unit 5 to move the discharge nozzle 41a to a position facing the center position CT of the substrate W held by the substrate holding unit 2, and then controls the first processing liquid supply unit 41 to discharge a continuous flow of hydrogen peroxide solution from the discharge nozzle 41a. Note that the control device 101 (control unit 102) may perform a full scan or half scan of the discharge nozzle 41a during the liquid film replacement process.

[0096] Next, the paddle forming unit 7 will be described with reference to Figures 3(a) and 3(b). As shown in Figures 3(a) and 3(b), the ring member 71 faces the peripheral edge of the substrate W. Specifically, the diameter of the ring member 71 is smaller than the diameter of the substrate W. More specifically, when the ring member 71 moves to the paddle position P2, the ring member 71 is positioned inside the multiple gripping members 21 described with reference to Figure 2.

[0097] The two ring support parts 72 are disposed at positions where they do not interfere with the discharge nozzle 41a moving along the movement trajectory TJ. In this embodiment, the ring arm 81 is coupled to the center part of the connection part 73. The center part of the connection part 73 faces the center position CT of the substrate W.

[0098] Next, the paddle position P2 will be described with reference to Fig. 4(a). Fig. 4(a) is an enlarged schematic diagram showing the ring member 71 located at the paddle position P2. Figs. 4(a) to 4(c) show cross sections of the ring member 71.

[0099] As shown in Figure 4(a), the paddle position P2 is a position above the substrate W, where the ring member 71 does not contact the substrate W and where the processing liquid does not leak out from the gap between the lower surface 71b of the ring member 71 and the upper surface of the substrate W.

[0100] When performing the paddle process, the control device 101 (control unit 102) controls the ring moving unit 8 to move the ring member 71 to the paddle position P2, and then controls the first processing liquid supply unit 41 to discharge from the discharge nozzle 41a an amount of sulfuric acid sufficient to cover the upper surface of the substrate W. As a result, a liquid film LM1 of sulfuric acid is held by the ring member 71. More specifically, the sulfuric acid is blocked by the ring member 71. Therefore, the sulfuric acid is not discharged from the substrate W.

[0101] The controller 101 (controller 102) controls the first processing liquid supply unit 41 to supply hydrogen peroxide solution to the substrate W during the paddle process. As a result, the SPM process is performed during the paddle process. The controller 101 (controller 102) positions the ring member 71 at the paddle position P2 until the end of the SPM process. As a result, the SPM liquid film LM2 is held by the ring member 71.

[0102] Next, the retracted position P3 will be described with reference to FIG. 4(b). FIG. 4(b) is an enlarged schematic diagram showing the ring member 71 positioned at the retracted position P3. As shown in FIG. 4(b), the retracted position P3 is a position above the paddle position P2 shown in FIG. 4(a) and indicates a position that does not surround the liquid film LM2 of the SPM. More specifically, the retracted position P3 indicates a position below the standby position P1 shown in FIG. 2. The SPM is an example of a "mixed liquid."

[0103] The control device 101 (controller 102) controls the ring moving part 8 to move the ring member 71 between the paddle position P2 and the retreat position P3. Specifically, after the SPM processing, the control device 101 (controller 102) controls the ring moving part 8 to move the ring member 71 from the paddle position P2 to the retreat position P3. As a result, the paddle state in which the SPM liquid film LM2 is supported on the upper surface of the substrate W is released.

[0104] The control device 101 (controller 102) executes a liquid film replacement process after moving the ring member 71 to the retracted position P3. Specifically, the control device 101 (controller 102) controls the first processing liquid supply unit 41 to supply hydrogen peroxide to the substrate W. As a result, SPM is discharged from the substrate W, and the liquid film of the processing liquid on the substrate W is replaced from the liquid film LM2 of SPM to a liquid film LM3 of hydrogen peroxide.

[0105] During the liquid film replacement process, the hydrogen peroxide solution is discharged from the substrate W. The control device 101 (control unit 102) controls the first processing liquid supply unit 41 to form a liquid film LM3 of the hydrogen peroxide solution on the substrate W while discharging the hydrogen peroxide solution from the substrate W.

[0106] Next, the cleaning position P4 will be described with reference to Fig. 4(c). Fig. 4(c) is an enlarged schematic diagram showing the ring member 71 positioned at the cleaning position P4. As shown in Fig. 4(c), the cleaning position P4 is a position surrounding the liquid film LM4 of the rinsing liquid. More specifically, the cleaning position P4 is a position lower than the retracted position P3 shown in Fig. 4(b) and higher than the paddle position P2 shown in Fig. 4(a). More specifically, the cleaning position P4 is a position where the processing liquid leaks out from a gap between the lower surface 71b of the ring member 71 and the upper surface of the substrate W.

[0107] The control device 101 (control unit 102) executes a rinsing process after the liquid film replacement process. Specifically, after executing the liquid film replacement process, the control device 101 (control unit 102) controls the second processing liquid supply unit 42 to supply a rinsing liquid to the upper surface of the substrate W. As a result, a liquid film LM4 of the rinsing liquid is formed on the upper surface of the substrate W. More specifically, the liquid film of the processing liquid on the substrate W is replaced from the liquid film LM3 of hydrogen peroxide solution to the liquid film LM4 of the rinsing liquid.

[0108] The ring member 71 is located at the cleaning position P4 during the rinsing process. That is, the ring member 71 is located at the cleaning position P4 when the rinsing liquid is supplied to the substrate W. The ring member 71 may move from the retreat position P3 to the cleaning position P4 before the supply of the rinsing liquid starts. Alternatively, the ring member 71 may move from the retreat position P3 to the cleaning position P4 after the supply of the rinsing liquid starts. That is, the ring member 71 may move from the retreat position P3 to the cleaning position P4 after a liquid film LM4 of the rinsing liquid is formed on the substrate W. For example, the control device 101 (control unit 102) may control the ring moving unit 8 to move the ring member 71 from the retreat position P3 to the cleaning position P4, and then control the second processing liquid supply unit 42 to supply the rinsing liquid to the upper surface of the substrate W.

[0109] According to this embodiment, the ring member 71 is located at the cleaning position P4 during the rinsing process, so that the ring member 71 can be cleaned with the rinsing liquid. Specifically, the chemical liquid adhering to the ring member 71 can be washed away with the rinsing liquid.

[0110] 4(c) does not exceed the upper surface 71c of the ring member 71, the liquid level position of the liquid film LM4 of the rinsing liquid may exceed the upper surface 71c of the ring member 71. In this case, the rinsing liquid flows through the gap between the lower surface 71b of the ring member 71 and the upper surface of the substrate W to be discharged from the substrate W, and also exceeds the upper surface 71c of the ring member 71 to be discharged from the substrate W. As a result, the inner circumferential surface 71a, the lower surface 71b, the upper surface 71c, and the outer circumferential surface 71d of the ring member 71 are cleaned by the rinsing liquid.

[0111] Next, the ring member 71 will be described with reference to Figures 4(a) and 4(c). As shown in Figures 4(a) and 4(c), the inner circumferential surface 71a and the lower surface 71b of the ring member 71 are liquid-contacting surfaces that come into contact with the treatment liquid. In this embodiment, the inner circumferential surface 71a and the lower surface 71b of the ring member 71 include hydrophobic surfaces. The hydrophobic surfaces are water-repellent to the treatment liquid.

[0112] According to this embodiment, since the liquid contact surface of the ring member 71 is a hydrophobic surface, the time required for drying the ring member 71 can be shortened compared to when the liquid contact surface of the ring member 71 is hydrophilic. Also, since the liquid contact surface of the ring member 71 is a hydrophobic surface, the processing liquid is less likely to adhere to the liquid contact surface of the ring member 71 compared to when the liquid contact surface of the ring member 71 is hydrophilic. As a result, it is possible to reduce the possibility of a malfunction in which the processing liquid drops onto the substrate W from the ring member 71 located at the standby position P1 shown in Fig. 2. Note that the entire surface of the ring member 71 (the inner circumferential surface 71a, the lower surface 71b, the upper surface 71c, and the outer circumferential surface 71d) may be a hydrophobic surface.

[0113] Next, the substrate holding part 2 will be described with reference to Figures 5(a), 5(b) and 6. Figure 5(a) is a diagram showing a first state of the substrate holding part 2 included in the substrate processing apparatus 100 of the present embodiment. Figure 5(b) is a diagram showing a second state of the substrate holding part 2 included in the substrate processing apparatus 100 of the present embodiment. Figure 6 is a diagram showing the operation of the substrate holding part 2 included in the substrate processing apparatus 100 of the present embodiment.

[0114] As shown in FIG. 5(a), the substrate holder 2 includes, in addition to a plurality of gripping members 21 and a spin base 22, a plurality of support members 23, a plurality of pedestals 25, and a gripper rotation mechanism 27.

[0115] The plurality of pedestals 25 are disposed on the periphery of the spin base 22. Each of the pedestals 25 supports one of the plurality of gripping members 21 and one of the plurality of support members 23. Each of the support members 23 protrudes upward from the corresponding pedestal 25.

[0116] The substrate holding part 2 holds the substrate W horizontally at two positions, a support position and a gripping position. The support position is a position lower than the gripping position. Specifically, the multiple support members 23 support the peripheral portion of the substrate W. The multiple support members 23 support the substrate W, thereby holding the substrate W at the support position. As already described, the multiple gripping members 21 grip the peripheral portion of the substrate W. The multiple gripping members 21 grip the substrate W, thereby holding the substrate W at the gripping position. As shown in FIG. 5(a), the substrate holding part 2 in the first state holds the substrate W at the support position. As shown in FIG. 5(b), the substrate holding part 2 in the second state holds the substrate W at the gripping position.

[0117] Each of the gripping members 21 has a V-shaped holding groove 26 that opens horizontally. Each of the holding grooves 26 faces inward (toward the center position CT of the substrate W). Each of the gripping members 21 is rotatable about the corresponding third rotation axis AX3 with respect to the pedestal 25. Each of the support members 23 is disposed inward (toward the center position CT of the substrate W) from the corresponding third rotation axis AX3. The third rotation axes AX3 each extend vertically.

[0118] The gripper rotation mechanism 27 is controlled by the control device 101 (control unit 102) to synchronously rotate each gripper member 21 around each third rotation axis AX3. The gripper rotation mechanism 27 is housed, for example, in the spin base 22. The gripper rotation mechanism 27 synchronously rotates each gripper member 21 between a grip contact position where each gripper member 21 contacts the peripheral end surface of the substrate W and a grip retract position where each gripper member 21 is separated from the peripheral end surface of the substrate W.

[0119] Specifically, as shown in FIG. 6, the gripper rotation mechanism 27 rotates each gripper 21 in a first rotation direction R1 and a second rotation direction R2. The first rotation direction R1 is a rotation direction opposite to the second rotation direction R2. The first rotation direction R1 and the second rotation direction R2 indicate rotation directions with the corresponding third rotation axis AX3 as the rotation center. When the gripper 21 rotates in the first rotation direction R1 while the plurality of support members 23 are supporting the substrate W, each gripper 21 comes into contact with the peripheral end surface of the substrate W. As a result, the substrate W is gripped by the plurality of gripper members 21. That is, the state of the substrate holder 2 transitions from the first state to the second state. When the gripper 21 rotates in the second rotation direction R2 while the plurality of gripper members 21 are gripping the substrate W, each gripper 21 moves away from the peripheral end surface of the substrate W. As a result, the substrate W is supported by the plurality of support members 23. That is, the state of the substrate holding part 2 transitions from the second state to the first state.

[0120] For example, when the substrate W is loaded into the processing chamber 200a, the state of the substrate holder 2 is the first state, and the center robot CR shown in Fig. 1 places the substrate W on the multiple support members 23. As a result, the upper ends of the support members 23 come into point contact with the peripheral portion of the lower surface of the substrate W, and the substrate W is held horizontally at the support position.

[0121] With the substrate W held horizontally at the support position, the gripper rotation mechanism 27 rotates the multiple gripping members 21 from the gripping retract position to the gripping contact position in the first rotation direction R1, so that the peripheral edge of the substrate W enters each holding groove 26, and the substrate W is lifted upward by the inclination of each holding groove 26. As a result, the lower surface of the substrate W separates from the multiple support members 23, and the substrate W is held horizontally at the gripping position.

[0122] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 1 to Fig. 9. Fig. 7 to Fig. 9 are flowcharts showing an example of the operation of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 7 to Fig. 9 show an example of the flow of processing executed by the control device 101 (control unit 102). The processing shown in Fig. 7 to Fig. 9 includes steps S1 to S23.

[0123] 7, when processing a substrate W, the control device 101 (control unit 102) first controls the center robot CR to load the substrate W into the processing chamber 200a (step S1). In detail, the center robot CR places the substrate W on the multiple support members 23 of the substrate holder 2. As a result, the substrate W is held at the support position.

[0124] When the substrate W is supported at the support position, the control device 101 (control unit 102) controls the gripper rotation mechanism 27 to rotate each of the gripping members 21 in the first rotation direction R1 from the gripping retraction position to the gripping contact position. As a result, the substrate W is gripped by the multiple gripping members 21 and held at the gripping position (step S2).

[0125] When the substrate W is gripped by the multiple gripping members 21, the control device 101 (control unit 102) controls the substrate rotation unit 3 to rotate the substrate at a first rotation speed (step S3). The first rotation speed indicates a rotation speed at which the processing liquid discharged to the central portion of the substrate W is spread to the peripheral portion of the substrate W by centrifugal force. The first rotation speed is, for example, 50 rpm.

[0126] When the rotation speed of the substrate W reaches the first rotation speed, the control device 101 (control unit 102) controls the ring moving unit 8 to lower the ring member 71 from the standby position P1 to the paddle position P2 (step S4).

[0127] When the ring member 71 moves to the paddle position P2, the control device 101 (control unit 102) causes sulfuric acid to be discharged from the discharge nozzle 41a (step S5). More specifically, the control device 101 (control unit 102) controls the nozzle moving unit 5 to move the discharge nozzle 41a to a position facing the center position CT of the substrate W. The discharge nozzle 41a is located at a nozzle standby position before the movement. The nozzle standby position may be, for example, a position outside the cup unit 6. When the discharge nozzle 41a moves to a position facing the center position CT of the substrate W, the control device 101 (control unit 102) controls the first processing liquid supply unit 41 to discharge sulfuric acid from the discharge nozzle 41a. As a result, a liquid film LM1 of sulfuric acid is formed on the upper surface of the substrate W. The liquid film LM1 of sulfuric acid is held on the substrate W by the ring member 71.

[0128] The control device 101 (controller 102) controls the substrate rotation unit 3 to perform the puddle process while the sulfuric acid liquid film LM1 is held by the ring member 71. In other words, the control device 101 (controller 102) performs the puddle process after the sulfuric acid liquid film LM1 is formed on the upper surface of the substrate W. In this embodiment, the control device 101 (controller 102) stops the rotation of the substrate W (step S6). As a result, the sulfuric acid liquid film LM1 becomes in a puddle state.

[0129] The control device 101 (controller 102) performs SPM processing after stopping the rotation of the substrate W. More specifically, the control device 101 (controller 102) controls the nozzle movement unit 5 to move the discharge nozzle 41a, while controlling the first processing liquid supply unit 41 to discharge hydrogen peroxide solution from the discharge nozzle 41a (step S7). Specifically, the discharge nozzle 41a discharges hydrogen peroxide solution toward the upper surface of the substrate W while performing a half scan or full scan. As a result, an SPM liquid film LM2 is formed on the upper surface of the substrate W, and the substrate W is processed.

[0130] During SPM treatment, the control device 101 (control unit 102) controls the flow rate adjustment valve 415 to adjust the flow rate of the hydrogen peroxide solution so that the mixture ratio of sulfuric acid and hydrogen peroxide solution falls within a predetermined range.

[0131] The SPM process ends when the discharge nozzle 41a executes a half scan or full scan a preset number of times. Specifically, when the number of half scans or full scans executed by the discharge nozzle 41a reaches the preset number, the control device 101 (control unit 102) controls the first processing liquid supply unit 41 to stop discharging the hydrogen peroxide solution onto the substrate W. As a result, the SPM process ends. After finishing the SPM process, the control device 101 (control unit 102) controls the nozzle movement unit 5 to move the discharge nozzle 41a to a position facing the center position CT of the substrate W. The preset number of times is stored in advance in the memory unit 103.

[0132] After the SPM process is completed, the control device 101 (control unit 102) controls the ring moving unit 8 to raise the ring member 71 from the paddle position P2 to the retreat position P3 (step S8). As a result, the paddle state of the SPM liquid film LM2 is released.

[0133] The control device 101 (controller 102) moves the ring member 71 from the paddle position P2 to the retracted position P3, and then executes the SPM reduction process. Specifically, as shown in Fig. 8, the control device 101 (controller 102) controls the substrate rotation unit 3 to rotate the substrate W at a second rotation speed (step S9). The second rotation speed indicates a rotation speed that reduces the amount of SPM on the substrate W. More specifically, the second rotation speed indicates a rotation speed that discharges the SPM on the substrate W from the peripheral portion of the substrate W to the outside of the substrate W. The second rotation speed is, for example, 200 rpm.

[0134] The control device 101 (control unit 102) stops the rotation of the substrate W when the time that has elapsed since the start of the SPM reduction process reaches a first preset time (step S10). The first preset time is pre-stored in the memory unit 103. The first preset time indicates the length of time during which only a portion of the SPM on the substrate W is discharged from the substrate W. In other words, the first preset time is set to a length of time that prevents all of the SPM on the substrate W from being discharged. The amount of SPM on the substrate W is reduced by the SPM reduction process. More specifically, the thickness of the SPM liquid film LM2 becomes thinner.

[0135] After stopping the rotation of the substrate W, the control device 101 (control unit 102) releases the substrate W from the gripping members 21 (step S11). Specifically, the control device 101 (control unit 102) controls the gripping member rotation mechanism 27 to rotate the gripping members 21 in the second rotation direction R2 from the gripping contact positions to the gripping retraction positions. As a result, the substrate W is supported by the multiple support members 23 and held at the support positions.

[0136] After the substrate W is held at the support position, the control device 101 (controller 102) executes a liquid film replacement process. Specifically, the control device 101 (controller 102) first controls the substrate rotation unit 3 to rotate the substrate W at a third rotation speed (step S12). When the rotation speed of the substrate W reaches the third rotation speed, the control device 101 (controller 102) controls the first processing liquid supply unit 41 to discharge hydrogen peroxide solution from the discharge nozzle 41a in a continuous flow (step S13). As a result, the liquid film of the processing liquid on the substrate W is replaced from the liquid film LM2 of SPM to a liquid film LM3 of hydrogen peroxide solution.

[0137] Specifically, the third rotation speed is a rotation speed at which the processing liquid discharged to the central portion of the substrate W is spread to the peripheral portion of the substrate W by centrifugal force, and at which the position of the substrate W supported by the multiple support members 23 does not shift. The third rotation speed is, for example, 300 rpm.

[0138] The control device 101 (control unit 102) rotates the substrate W at a third rotation speed and supplies a continuous flow of hydrogen peroxide solution to the substrate W. As a result, a liquid film LM3 of the hydrogen peroxide solution spreads on the substrate W, and the liquid film LM2 of the SPM is swept away by the liquid film LM3 of the hydrogen peroxide solution, so that the SPM is discharged from the substrate W, and the liquid film of the processing liquid on the substrate W is replaced from the liquid film LM2 of the SPM to the liquid film LM3 of the hydrogen peroxide solution.

[0139] In addition, the liquid film replacement process requires a larger amount of hydrogen peroxide water than the SPM process because the hydrogen peroxide water liquid film LM3 must push the SPM liquid film LM2 out of the substrate W. Therefore, the control device 101 (control unit 102) controls the flow rate adjustment valve 415 during the liquid film replacement process to increase the flow rate of the hydrogen peroxide water compared to the SPM process.

[0140] According to this embodiment, the control device 101 (control unit 102) causes the plurality of supporting members 23 to support the substrate W during the liquid film replacement process. Therefore, during the liquid film replacement process, the substrate W is not gripped by the plurality of gripping members 21. As a result, it is possible to prevent defects caused by stress from occurring in the substrate W during the liquid film process.

[0141] Specifically, the temperature of sulfuric acid used in the SPM process is 100° C. or higher. For example, the temperature of sulfuric acid is 120° C. or 170° C. Furthermore, during the SPM process, sulfuric acid reacts with hydrogen peroxide water to generate reaction heat. Therefore, the substrate W becomes hot due to the SPM process. On the other hand, the temperature of hydrogen peroxide is lower than that of sulfuric acid. For example, the temperature of hydrogen peroxide is approximately equal to room temperature. Therefore, during the liquid film replacement process, hydrogen peroxide, which is lower in temperature than the substrate W, is supplied to the upper surface of the high-temperature substrate W. As a result, the substrate W may be warped. If the substrate W is warped while the peripheral portion of the substrate W is being held by the multiple holding members 21 during the liquid film replacement process, stress is generated inside the substrate W, and there is a possibility that a defect caused by the stress occurs in the substrate W. In contrast, according to the present embodiment, the substrate W is not held during the liquid film replacement process, so that the occurrence of a defect caused by the stress in the substrate W can be avoided.

[0142] Furthermore, according to this embodiment, the ring member 71 is retracted to the retracted position P3 during the liquid film replacement process. Therefore, even if the substrate W warps and the peripheral edge of the substrate W is raised, the ring member 71 does not interfere with the substrate W. This makes it possible to prevent defects in the substrate W caused by the ring member 71 interfering with the substrate W.

[0143] Furthermore, during the liquid film replacement process, a larger amount of hydrogen peroxide solution is supplied to the substrate W compared to during the SPM process, and a larger amount of fumes (smoke-like gas) is generated from the substrate W. The fumes are generated due to a reaction between sulfuric acid and hydrogen peroxide solution. According to this embodiment, the amount of SPM on the substrate W can be reduced before the liquid film replacement process. In other words, the amount of sulfuric acid on the substrate W can be reduced before the liquid film replacement process. Therefore, the amount of fumes generated from the substrate W can be reduced. Furthermore, by reducing the amount of SPM on the substrate W before the liquid film replacement process, the time required for the liquid film replacement process can be shortened.

[0144] During the liquid film replacement process, the discharge nozzle 41a may discharge the hydrogen peroxide solution toward the upper surface of the substrate W while performing a half scan or full scan.

[0145] When the time elapsed since the start of the liquid film replacement process reaches the second preset time, the control device 101 (control unit 102) controls the first processing liquid supply unit 41 to stop discharging hydrogen peroxide. As a result, the liquid film replacement process ends. After stopping the discharge of hydrogen peroxide, the control device 101 (control unit 102) controls the nozzle moving unit 5 to move the discharge nozzle 41a to the nozzle standby position. Furthermore, after the second preset time has elapsed, the control device 101 (control unit 102) controls the substrate rotating unit 3 to stop the rotation of the substrate W (step S14). When the rotation of the substrate W stops, the control device 101 (control unit 102) causes the substrate W to be gripped by the multiple gripping members 21 in the same manner as in step S2 (step S15). The second preset time is preset in the memory unit 103 in advance. The second preset time may be set based on the length of time required for the temperature of the substrate W to return to a temperature approximately equal to room temperature and for the warp of the substrate W to be eliminated, for example.

[0146] 9, the control device 101 (control unit 102) causes the multiple gripping members 21 to grip the substrate W, and then executes a rinse process (step S16). Specifically, after the control device 101 (control unit 102) causes the multiple gripping members 21 to grip the substrate W, the control device 101 (control unit 102) controls the substrate rotation unit 3 to rotate the substrate W at a fourth rotation speed. When the rotation speed of the substrate W reaches the fourth rotation speed, the control device 101 (control unit 102) controls the second processing liquid supply unit 42 to discharge the rinse liquid in a continuous flow from the rinse nozzle 42a toward the center of the substrate W. As a result, the chemical liquid (hydrogen peroxide solution) on the substrate W is washed away by the rinse liquid, and a liquid film LM4 of the rinse liquid is formed on the substrate W.

[0147] The fourth rotation speed indicates a rotation speed at which the processing liquid discharged to the central portion of the substrate W is discharged from the outer periphery of the substrate W to the outside of the substrate W by centrifugal force. More specifically, the fourth rotation speed indicates a rotation speed faster than the third rotation speed. For example, the fourth rotation speed is 500 rpm.

[0148] During the rinsing process, the control device 101 (control unit 102) controls the ring moving unit 8 to lower the ring member 71 from the retreat position P3 to the cleaning position P4 (step S17). As a result, the ring member 71 is cleaned by the rinsing liquid.

[0149] According to this embodiment, the ring member 71 can be moved to the cleaning position P4 during the rinsing process and cleaned with the rinsing liquid. Furthermore, according to this embodiment, the substrate W is rotated at the fourth rotation speed during the rinsing process, thereby shortening the time required for the rinsing process.

[0150] The control device 101 (control unit 102) may control the substrate rotation unit 3 to rotate the substrate W at a fifth rotation speed before lowering the ring member 71 from the retracted position P3 to the cleaning position P4. In this case, when the rotation speed of the substrate W reaches the fifth rotation speed, the control device 101 (control unit 102) controls the ring moving unit 8 to lower the ring member 71 from the retracted position P3 to the cleaning position P4. The fifth rotation speed indicates a rotation speed slower than the fourth rotation speed. More specifically, the fifth rotation speed indicates a rotation speed slower than the first rotation speed. For example, the fifth rotation speed is 10 rpm.

[0151] Specifically, if the substrate W is rotated at the fourth rotation speed when cleaning the ring member 71, the rinsing liquid may splash due to the ring member 71. Furthermore, if the substrate W is rotated at the fourth rotation speed when cleaning the ring member 71, the outer peripheral surface 71d of the ring member 71 may not be sufficiently cleaned. According to this embodiment, by rotating the substrate W at the fifth rotation speed when cleaning the ring member 71, it is possible to suppress splashing of the rinsing liquid. Furthermore, by rotating the substrate W at the fifth rotation speed when cleaning the ring member 71, it is possible to sufficiently clean the outer peripheral surface 71d of the ring member 71.

[0152] The rotation speed (fifth rotation speed) of the substrate W during cleaning of the ring member 71 may be variable. Specifically, the control device 101 (control unit 102) may control the substrate rotation unit 3 during cleaning of the ring member 71 to change the rotation speed (fifth rotation speed) of the substrate W.

[0153] When the time that has elapsed since the start of the discharge of the rinsing liquid reaches the third preset time, the control device 101 (control unit 102) controls the second processing liquid supply unit 42 to stop the discharge of the rinsing liquid. As a result, the rinsing process ends. After the rinsing process ends, the control device 101 (control unit 102) controls the ring moving unit 8 to raise the ring member 71 to the drying position (step S18). The third preset time is pre-stored in the memory unit 103. As described with reference to FIG. 2, in this embodiment, the drying position is equal to the standby position P1.

[0154] The control device 101 (control unit 102) moves the ring member 71 to the drying position (standby position P1) and then executes the ring drying process (step S19). Specifically, the control device 101 (control unit 102) controls the drying unit 9 to dry the ring member 71. For example, when the time that has elapsed since the start of the ring drying process reaches a fourth preset time, the control device 101 (control unit 102) may control the drying unit 9 to stop the discharge of gas from the drying nozzle 9a. The fourth preset time is stored in advance in the storage unit 103.

[0155] Furthermore, the control device 101 (control unit 102) moves the ring member 71 to the drying position (standby position P1) and then executes a substrate drying process (step S20). Specifically, the control device 101 (control unit 102) controls the substrate rotation unit 3 to increase the rotation speed of the substrate W to be higher than the rotation speed during the rinsing process. As a result, a large centrifugal force is applied to the rinsing liquid on the substrate W, and the rinsing liquid adhering to the substrate W is shaken off around the substrate W. In this manner, the rinsing liquid is removed from the substrate W and the substrate W is dried.

[0156] When the time that has elapsed since the start of the substrate drying process reaches a fifth preset time, the control device 101 (control unit 102) controls the substrate rotation unit 3 to stop the rotation of the substrate W (step S21). The fifth preset time is stored in advance in the storage unit 103.

[0157] After stopping the rotation of the substrate W, the control device 101 (control unit 102) releases the substrate W from the multiple gripping members 21 (step S22), similar to step S11. As a result, the substrate W is supported by the multiple support members 23.

[0158] After the substrate W is supported by the plurality of supporting members 23, the control device 101 (control unit 102) controls the center robot CR to unload the substrate W from the processing chamber 200a (step S23).

[0159] 7 to 9 is completed by completing the ring drying process and unloading the substrate W. In the processes shown in Figures 7 to 9, step S9 (SPM reduction process) and step S10 may be omitted.

[0160] Next, another example of the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 10 and Fig. 11. Fig. 10 and Fig. 11 are flow charts showing another example of the operation of the substrate processing apparatus 100 of this embodiment. In detail, Fig. 10 and Fig. 11 show a part of another example of the flow of processing executed by the control device 101 (control unit 102).

[0161] As shown in FIG. 10, the process of step S2 shown in FIG. 7 may be omitted. That is, the control device 101 (control unit 102) may not cause the multiple gripping members 21 to grip the substrate W after the center robot CR carries the substrate W into the processing chamber 200a. Also, as shown in FIG. 11, the SPM reduction process may be omitted. That is, steps S9 to S11 shown in FIG. 8 may be omitted. As a result, in a state in which the substrate W is supported by the multiple support members 23, the processes of steps S3 to S8 and steps S12 to S14 are performed. That is, the substrate W is supported by the multiple support members 23 until the rinse process is performed. In other words, the multiple gripping members 21 do not grip the substrate W until the rinse process is performed.

[0162] 10 and 11, the control device 101 (control unit 102) causes the multiple support members 23 to support the substrate W during paddle processing. Therefore, the multiple gripping members 21 do not grip the substrate W during paddle processing, and the chemical liquid (sulfuric acid) is less likely to adhere to the gripping members 21. This reduces the possibility that the chemical liquid (sulfuric acid) remaining on the gripping members 21 will contaminate the substrate W to be processed next. This improves the quality of the substrate W after substrate processing.

[0163] The first embodiment of the present invention has been described above with reference to Figs. 1 to 11. According to this embodiment, the consumption of the processing liquid can be reduced. Specifically, when the sulfuric acid liquid film LM1 and the SPM liquid film LM2 are formed, the sulfuric acid and the SPM do not pass between the peripheral portion of the upper surface of the substrate W and the lower surface 71b of the ring member 71. Therefore, it is sufficient to use an amount of sulfuric acid that allows the sulfuric acid liquid film LM1 to cover the entire upper surface of the substrate W, and the consumption of sulfuric acid can be reduced compared to a configuration in which the sulfuric acid is discharged from the substrate W while the sulfuric acid liquid film LM1 is formed on the substrate W.

[0164] Furthermore, according to this embodiment, the sulfuric acid can be blocked by the inner circumferential surface 71a of the ring member 71, so that the amount of sulfuric acid discharged from the discharge nozzle 41a can be increased as long as the amount does not exceed the upper surface of the ring member 71. Therefore, it is possible to reduce the possibility of a problem that a part of the upper surface of the substrate W is not covered with the sulfuric acid liquid film LM1.

[0165] Furthermore, according to this embodiment, the sulfuric acid liquid film LM1 and the SPM liquid film LM2 are surrounded by the ring member 71. Therefore, even if turbulence occurs inside the cup portion 6 due to the gas exhaust process by the exhaust section 201, the sulfuric acid liquid film LM1 and the SPM liquid film LM2 are unlikely to be exposed to the turbulence, and therefore a decrease in temperature of the sulfuric acid and SPM due to the turbulence can be suppressed.

[0166] In this embodiment, the discharge nozzle 41a discharges sulfuric acid and hydrogen peroxide solution exclusively, but the substrate processing unit 200 may have a discharge nozzle that discharges sulfuric acid and a discharge nozzle that discharges hydrogen peroxide solution.

[0167] Furthermore, in this embodiment, the rinse nozzle 42a is a fixed nozzle, but the rinse nozzle 42a may be a nozzle that is movable in the horizontal and vertical directions, similar to the discharge nozzle 41a.

[0168] [Embodiment 2] Next, a second embodiment of the present invention will be described with reference to Fig. 12. However, differences from the first embodiment will be described, and a description of the same points as in the first embodiment will be omitted. The second embodiment differs from the first embodiment in that hydrogen peroxide is supplied to the substrate W by a shower nozzle 44a.

[0169] Fig. 12 is a diagram showing a schematic internal configuration of a substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. As shown in Fig. 12, the substrate processing section 200 has a processing chamber 200a, a substrate holding section 2, a substrate rotating section 3, a first nozzle moving section 5A, a second nozzle moving section 5B, a cup section 6, a paddle forming section 7, a ring moving section 8, and an exhaust section 201. The substrate processing apparatus 100 also includes a processing liquid supply section 4 and a drying section 9.

[0170] In this embodiment, the processing liquid supply unit 4 includes a second processing liquid supply unit 42, a third processing liquid supply unit 43, and a fourth processing liquid supply unit 44. The third processing liquid supply unit 43 supplies sulfuric acid to the upper surface of the substrate W held by the substrate holding unit 2. The fourth processing liquid supply unit 44 supplies hydrogen peroxide to the upper surface of the substrate W held by the substrate holding unit 2.

[0171] In detail, the third processing liquid supply unit 43 has a discharge nozzle 43a, a first supply pipe 411, and a first on-off valve 413. The fourth processing liquid supply unit 44 has a shower nozzle 44a, a second supply pipe 412, a second on-off valve 414, and a flow rate adjustment valve 415. The discharge nozzle 43a and the shower nozzle 44a are accommodated in the processing chamber 200a. Therefore, the substrate processing unit 200 has the discharge nozzle 43a and the shower nozzle 44a.

[0172] In this embodiment, a downstream end of the first supply pipe 411 is connected to a discharge nozzle 43a. The discharge nozzle 43a discharges sulfuric acid toward the upper surface of the substrate W. A downstream end of the second supply pipe 412 is connected to a shower nozzle 44a. The shower nozzle 44a discharges hydrogen peroxide solution in a shower-like manner toward the upper surface of the substrate W. A portion of the second supply pipe 412 is housed in the processing chamber 200a. The remaining portion of the second supply pipe 412 is disposed outside the processing chamber 200a.

[0173] The first nozzle moving unit 5A moves the discharge nozzle 43a in the vertical and horizontal directions above the substrate W. Specifically, the first nozzle moving unit 5A has a first nozzle arm 51A, a first nozzle base 52A, and a first nozzle moving mechanism 53A. When discharging sulfuric acid from the discharge nozzle 43a, the first nozzle moving unit 5A moves the discharge nozzle 43a from the first nozzle standby position to a position facing the center position CT of the substrate W. The configuration of the first nozzle moving unit 5A is the same as that of the nozzle moving unit 5 described with reference to FIG. 2, and therefore description thereof will be omitted.

[0174] The second nozzle movement unit 5B moves the shower nozzle 44a vertically and horizontally above the substrate W. Specifically, the second nozzle movement unit 5B has a second nozzle arm 51B, a second nozzle base 52B, and a second nozzle movement mechanism 53B.

[0175] The second nozzle arm 51B is connected to the second nozzle base 52B and extends horizontally from the second nozzle base 52B. The second nozzle arm 51B supports the shower nozzle 44a. For example, the shower nozzle 44a is connected to the tip of the second nozzle arm 51B. The second nozzle base 52B extends vertically.

[0176] The second nozzle moving mechanism 53B moves the second nozzle arm 51B in the vertical and horizontal directions. As a result, the shower nozzle 44a moves in the vertical and horizontal directions. The second nozzle moving mechanism 53B is controlled by the control device 101 (control unit 102).

[0177] Specifically, the second nozzle moving mechanism 53B swings the second nozzle base 52B around a fourth rotation axis AX4 extending vertically, causing the second nozzle arm 51B to swing along the horizontal plane. As a result, the shower nozzle 44a moves along the horizontal plane. The second nozzle moving mechanism 53B also raises and lowers the second nozzle base 52B vertically, causing the second nozzle arm 51B to rise and lower. As a result, the shower nozzle 44a moves vertically. The second nozzle moving mechanism 53B includes, for example, a ball screw mechanism and an electric motor capable of forward and reverse rotation. The electric motor drives the ball screw mechanism.

[0178] When discharging hydrogen peroxide solution, the shower nozzle 44a moves from the second nozzle standby position to above the substrate W. Specifically, the second nozzle movement unit 5B performs a full scan or half scan of the shower nozzle 44a during SPM processing. The second nozzle movement unit 5B moves the shower nozzle 44a to a position facing the center position CT of the substrate W during liquid film replacement processing. Note that the second nozzle movement unit 5B may perform a full scan or half scan of the shower nozzle 44a during liquid film replacement processing.

[0179] Above, the second embodiment of the present invention has been described with reference to Fig. 12. According to the second embodiment, it is possible to reduce the consumption of processing liquid, similarly to the first embodiment. Furthermore, according to the second embodiment, since the hydrogen peroxide solution is supplied from the shower nozzle 44a, it is possible to more reliably supply the hydrogen peroxide solution to substantially the entire upper surface of the substrate W during SPM processing.

[0180] In this embodiment, the substrate processing apparatus 100 discharges sulfuric acid from the discharge nozzle 43a. However, the substrate processing apparatus 100 may discharge sulfuric acid and hydrogen peroxide solution exclusively from the shower nozzle 44a.

[0181] [Embodiment 3] Next, a third embodiment of the present invention will be described with reference to Fig. 13 to Fig. 15. However, differences from the first and second embodiments will be described, and a description of the same matters as the first and second embodiments will be omitted. Unlike the first and second embodiments, the third embodiment performs a rinsing process after supplying a chemical liquid to the substrate W. The chemical liquid is, for example, hydrofluoric acid (HF) or phosphoric acid.

[0182] 13 is a diagram showing a schematic internal configuration of a substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. In the present embodiment, the substrate processing unit 200 executes a puddle process, a rinse process, a substrate drying process, and a ring drying process. Here, the puddle process refers to a process for forming a puddle state in which a liquid film of the chemical liquid is supported on the upper surface of the substrate W. The puddle process maintains the liquid film of the chemical liquid in the puddle state on the substrate W. More specifically, the substrate processing unit 200 uses a ring member 71 to hold the liquid film of the chemical liquid in the puddle state.

[0183] 13, the substrate processing unit 200 includes a processing chamber 200a, a substrate holding unit 2, a substrate rotating unit 3, a nozzle moving unit 5, a cup unit 6, a paddle forming unit 7, a ring moving unit 8, and an exhaust unit 201. The substrate processing apparatus 100 includes a processing liquid supply unit 4 and a drying unit 9.

[0184] In this embodiment, the processing liquid supply unit 4 includes a second processing liquid supply unit 42 and a fifth processing liquid supply unit 45. The fifth processing liquid supply unit 45 supplies a chemical liquid to the upper surface of the substrate W held by the substrate holding unit 2. In detail, the fifth processing liquid supply unit 45 has a chemical liquid discharge nozzle 45a, a chemical liquid supply pipe 451, and a chemical liquid on-off valve 452. The chemical liquid discharge nozzle 45a is accommodated in the processing chamber 200a. Therefore, the substrate processing unit 200 has the chemical liquid discharge nozzle 45a. A part of the chemical liquid supply pipe 451 is accommodated in the processing chamber 200a. The remaining part of the chemical liquid supply pipe 451 is arranged outside the processing chamber 200a. The chemical liquid on-off valve 452 is arranged outside the processing chamber 200a.

[0185] The chemical liquid supply pipe 451 is a tubular member through which the chemical liquid flows. The downstream end of the chemical liquid supply pipe 451 is connected to the chemical liquid discharge nozzle 45a. The chemical liquid on-off valve 452 is provided in the chemical liquid supply pipe 451. The chemical liquid on-off valve 452 can be opened and closed. The opening and closing operation of the chemical liquid on-off valve 452 is controlled by the control device 101 (control unit 102). The chemical liquid is supplied to the upstream end of the chemical liquid supply pipe 451. When the chemical liquid on-off valve 452 opens, the chemical liquid flows through the chemical liquid supply pipe 451 to the chemical liquid discharge nozzle 45a. As a result, the chemical liquid is supplied to the chemical liquid discharge nozzle 45a and discharged from the chemical liquid discharge nozzle 45a. When the chemical liquid on-off valve 452 closes, the flow of the chemical liquid through the chemical liquid supply pipe 451 stops.

[0186] The nozzle moving unit 5 moves the chemical solution discharge nozzle 45a in the vertical and horizontal directions above the substrate W. When discharging the chemical solution from the chemical solution discharge nozzle 45a, the nozzle moving unit 5 moves the chemical solution discharge nozzle 45a to a position facing the center position CT of the substrate W.

[0187] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Figs. 13 to 15. Figs. 14 and 15 are flowcharts showing an example of the operation of the substrate processing apparatus 100 of this embodiment. In detail, Figs. 14 and 15 show an example of the flow of processing executed by the control device 101 (control unit 102). The processing shown in Figs. 14 and 15 includes steps S31 to S43.

[0188] 14, when processing a substrate W, the control device 101 (control unit 102) first controls the center robot CR to load the substrate W into the processing chamber 200a (step S31). In detail, the center robot CR places the substrate W on the multiple support members 23 of the substrate holder 2. As a result, the substrate W is held at the support position.

[0189] In this embodiment, similar to the processing described with reference to Figures 10 and 11, the control device 101 (control unit 102) does not cause the multiple gripping members 21 to grip the substrate W after the center robot CR transports the substrate W into the processing chamber 200a.

[0190] When the substrate W is supported by the multiple support members 23, the control device 101 (control unit 102) controls the substrate rotation unit 3 to rotate the substrate W at a third rotation speed (step S32). As already described, the third rotation speed is a rotation speed at which the processing liquid discharged to the central portion of the substrate W is spread to the peripheral portion of the substrate W by centrifugal force, and indicates a rotation speed at which the position of the substrate W supported by the multiple support members 23 does not shift.

[0191] When the rotation speed of the substrate W reaches the third rotation speed, the control device 101 (control section 102) controls the ring moving section 8 to lower the ring member 71 from the standby position P1 to the paddle position P2 (step S33).

[0192] When the ring member 71 moves to the paddle position P2, the control device 101 (control unit 102) discharges the chemical liquid from the chemical liquid discharge nozzle 45a (step S34), similar to step S5 described with reference to Fig. 7. As a result, a liquid film of the chemical liquid is formed on the upper surface of the substrate W. In addition, the liquid film of the chemical liquid is held on the substrate W by the ring member 71.

[0193] The control device 101 (control unit 102) controls the substrate rotation unit 3 to perform the puddle process while the liquid film of the chemical liquid is held by the ring member 71. In other words, the control device 101 (control unit 102) performs the puddle process after the liquid film of the chemical liquid is formed on the upper surface of the substrate W. In this embodiment, the control device 101 (control unit 102) stops the rotation of the substrate W (step S35). As a result, the liquid film of the chemical liquid is in a puddle state. After the liquid film of the chemical liquid is formed on the substrate W, the control device 101 (control unit 102) controls the nozzle movement unit 5 to move the chemical liquid discharge nozzle 45a to the nozzle standby position.

[0194] When the time that has elapsed since the rotation of the substrate W was stopped reaches a sixth preset time, the control device 101 (control unit 102) controls the ring moving unit 8 to raise the ring member 71 from the paddle position P2 to the cleaning position P4 (step S36). The sixth preset time is stored in advance in the memory unit 103.

[0195] 15, the control device 101 (control unit 102) moves the ring member 71 from the paddle position P2 to the cleaning position P4, and then performs a rinsing process (step S37). Specifically, the control device 101 (control unit 102) controls the substrate rotation unit 3 to rotate the substrate W at a third rotation speed. When the rotation speed of the substrate W reaches the third rotation speed, the control device 101 (control unit 102) controls the second processing liquid supply unit 42 to discharge the rinsing liquid in a continuous flow from the rinsing nozzle 42a toward the center of the substrate W. As a result, the chemical liquid on the substrate W is washed away by the rinsing liquid, and a liquid film LM4 of the rinsing liquid is formed on the substrate W.

[0196] According to this embodiment, during the rinsing process, the ring member 71 can be moved to the cleaning position P4 and cleaned with the rinsing liquid.

[0197] Moreover, according to this embodiment, the substrate W is not gripped during the rinsing process. As a result, it is possible to prevent the occurrence of defects due to stress in the substrate W during the rinsing process. In detail, the temperature of hydrofluoric acid or phosphoric acid used in the substrate processing is 100° C. or higher. Therefore, the substrate W becomes hot due to the puddle process. On the other hand, the temperature of the rinsing liquid is lower than the temperature of hydrofluoric acid and phosphoric acid. For example, the temperature of the rinsing liquid is approximately equal to room temperature. Therefore, during the rinsing process, a rinsing liquid that is lower in temperature than the substrate W is supplied to the upper surface of the high-temperature substrate W. As a result, there is a risk of the substrate W warping. If the substrate W warps while the peripheral portion of the substrate W is being gripped by the multiple gripping members 21 during the rinsing process, stress is generated inside the substrate W, and there is a possibility that defects due to stress will occur in the substrate W. In contrast, according to this embodiment, the substrate W is not gripped during the rinsing process, so that it is possible to prevent the occurrence of defects due to stress in the substrate W.

[0198] Furthermore, according to this embodiment, the ring member 71 is located at the cleaning position P4 during the rinsing process. Therefore, even if the substrate W warps and the peripheral edge of the substrate W is raised, the ring member 71 does not interfere with the substrate W. This makes it possible to prevent defects in the substrate W caused by the ring member 71 interfering with the substrate W.

[0199] The processes after the rinsing process (steps S38 to S43) are similar to steps S18 to S23 described with reference to Fig. 9, and therefore their description will be omitted. However, in this embodiment, after the rinsing process is completed, the gripping members 21 are rotated in the first rotation direction R1 from their gripping retraction positions to their gripping contact positions to cause the multiple gripping members 21 to grip the substrate W. Then, with the substrate W gripped by the multiple gripping members 21, a substrate drying process is performed (step S40).

[0200] The third embodiment of the present invention has been described above with reference to Figs. 13 to 15. According to the third embodiment, as in the first and second embodiments, the consumption of the processing liquid can be reduced. Furthermore, according to this embodiment, since the multiple gripping members 21 do not grip the substrate W during the paddle processing, the chemical liquid is less likely to adhere to the gripping members 21. Therefore, it is possible to reduce the possibility that the next substrate W to be processed will be contaminated by the chemical liquid remaining on the gripping members 21. This makes it possible to improve the quality of the substrate W after the substrate processing. However, as in the processing described with reference to Figs. 7 to 9, the substrate W may be gripped by the multiple gripping members 21 during the paddle processing.

[0201] In this embodiment, the ring member 71 is moved from the paddle position P2 to the cleaning position P4 before the start of the rinsing process, but the ring member 71 may be moved from the paddle position P2 to the retracted position P3 before the start of the rinsing process. In this case, the control device 101 (controller 102) moves the ring member 71 from the retracted position P3 to the cleaning position P4 during the execution of the rinsing process. Specifically, the control device 101 (controller 102) moves the ring member 71 from the retracted position P3 to the cleaning position P4 after the temperature of the substrate W is lowered by the rinsing liquid and the warpage of the substrate W is eliminated. In this way, by moving the ring member 71 to the cleaning position P4 after the warpage of the substrate W is eliminated, it is possible to prevent the occurrence of defects in the substrate W due to the ring member 71 interfering with the substrate W.

[0202] Furthermore, in this embodiment, the substrate W rotates at the third rotation speed when the ring member 71 is cleaned with the rinsing liquid, but when the ring member 71 is moved from the retracted position P3 to the cleaning position P4 during the rinsing process as described above, the control device 101 (control unit 102) may control the substrate rotation unit 3 to change the rotation speed of the substrate W from the third rotation speed to the fifth rotation speed before moving the ring member 71 from the retracted position P3 to the cleaning position P4. In other words, the rotation speed of the substrate W when the ring member 71 is cleaned may be the fifth rotation speed.

[0203] [Embodiment 4] Next, a fourth embodiment of the present invention will be described with reference to Figures 16 to 23. However, differences from the first to third embodiments will be described, and a description of the same aspects as the first to third embodiments will be omitted. The fourth embodiment differs from the first to third embodiments in that the substrate processing unit 200 has a blocking unit 10A. In this embodiment, the side wall 112 included in the blocking unit 10A corresponds to the "liquid film holding unit."

[0204] Figures 16 and 17 are diagrams showing a schematic internal configuration of the substrate processing unit 200 included in the substrate processing apparatus 100 of this embodiment. In detail, Figure 16 shows the side wall portion 112 located at the standby position P1. Figure 17 shows the side wall portion 112 located at the paddle position P2. Figures 16 and 17 show a cross section of the blocking unit 10A.

[0205] The substrate processing unit 200 performs a puddle process, an SPM process, a liquid film replacement process, a rinsing process, a substrate drying process, and a ring drying process, similar to the substrate processing unit 200 included in the substrate processing apparatus 100 of the first embodiment. As shown in Fig. 16, the substrate processing unit 200 includes a processing chamber 200a, a substrate holding unit 2, a substrate rotating unit 3, a cup unit 6, a blocking unit 10A, a moving unit 16, and a first exhaust unit 201A. The substrate processing apparatus 100 includes a processing liquid supply unit 4 and a drying unit 9.

[0206] The blocking section 10A blocks the area above the substrate W held by the substrate holding section 2 (see FIG. 17). Specifically, the blocking section 10A has a top plate 11. The top plate 11 faces the substrate W held by the substrate holding section 2 and blocks the area above the substrate W (see FIG. 17). In other words, the top plate 11 is positioned above the substrate W and covers it. The top plate 11 is an example of a "blocking member." The top plate 11 has a canopy portion 111 and a side wall portion 112.

[0207] Canopy portion 111 is approximately circular in shape. The lower surface of canopy portion 111 faces the upper surface of substrate W held by substrate holding portion 2. Sidewall portion 112 is approximately cylindrical in shape. Sidewall portion 112 protrudes downward from the outer periphery of canopy portion 111. Therefore, sidewall portion 112 is supported by canopy portion 111. Canopy portion 111 is an example of a "support portion".

[0208] Specifically, the side wall portion 112 is located above the substrate W held by the substrate holding portion 2 and faces the substrate W. The diameter of the side wall portion 112 is smaller than the diameter of the substrate W. More specifically, when the side wall portion 112 moves to the paddle position P2, the side wall portion 112 is located inside the multiple gripping members 21 (see FIG. 17).

[0209] Blocker 10A has a first flow path 121 and a second flow path 122. First flow path 121 and second flow path 122 allow the treatment liquid to flow. A lower end of first flow path 121 opens to a lower surface 111a of canopy 111. Similarly, a lower end of second flow path 122 opens to a lower surface 111a of canopy 111. A lower end of first flow path 121 forms an outlet 121a (see FIG. 18(b)) for discharging the treatment liquid. A lower end of second flow path 122 forms an outlet 122a (see FIG. 18(b)) for discharging the treatment liquid.

[0210] The moving unit 16 moves the blocking unit 10A in the vertical direction above the substrate W. Specifically, the moving unit 16 is controlled by the control device 101 (control unit 102) to raise and lower the blocking unit 10A. The control device 101 (control unit 102) controls the moving unit 16 to change the vertical position of the side wall portion 112 included in the blocking unit 10A. Specifically, the moving unit 16 raises and lowers the blocking unit 10A so that the side wall portion 112 of the top plate 11 moves between the waiting position P1, the paddle position P2, the retreat position P3, and the cleaning position P4. The moving unit 16 includes a support arm 161, a base 162, and a moving mechanism 163. The configuration of the moving unit 16 is substantially the same as that of the ring moving unit 8 described with reference to FIG. 2, and therefore, description thereof will be omitted.

[0211] In the present embodiment, the processing liquid supply unit 4 includes a fourth processing liquid supply unit 44 and a sixth processing liquid supply unit 46. The sixth processing liquid supply unit 46 exclusively supplies sulfuric acid and a rinsing liquid to the upper surface of the substrate W held by the substrate holding unit 2.

[0212] Specifically, the sixth processing liquid supply unit 46 has a first supply pipe 411, a first on-off valve 413, a rinse supply pipe 421, and a rinse on-off valve 422. A downstream end of the first supply pipe 411 is connected to the first flow path 121 of the interrupter 10A. A downstream end of the rinse supply pipe 421 is connected to the second flow path 122 of the interrupter 10A. Thus, the sixth processing liquid supply unit 46 supplies sulfuric acid to the first flow path 121 of the interrupter 10A, and supplies a rinse liquid to the second flow path 122 of the interrupter 10A.

[0213] In detail, when the first on-off valve 413 is opened, sulfuric acid flows from the first supply pipe 411 into the first flow path 121. As a result, the sulfuric acid flows through the first flow path 121, and is discharged from the lower end (discharge port 121a) of the first flow path 121. Similarly, when the rinse on-off valve 422 is opened, the rinse liquid flows from the rinse supply pipe 421 into the second flow path 122. As a result, the rinse liquid flows through the second flow path 122, and is discharged from the lower end (discharge port 122a) of the second flow path 122.

[0214] The fourth processing liquid supply unit 44 supplies hydrogen peroxide to the upper surface of the substrate W held by the substrate holding unit 2. In detail, the fourth processing liquid supply unit 44 has a second supply pipe 412, a second on-off valve 414, and a flow rate adjustment valve 415. The second supply pipe 412 supplies hydrogen peroxide to a shower flow path 416 included in the blocker 10A, as will be described later with reference to FIG. 18(a).

[0215] In this embodiment, the drying unit 9 dries the side wall portion 112 included in the blocking unit 10A. Specifically, the drying unit 9 discharges gas from a drying nozzle 9a toward the side wall portion 112 to dry the side wall portion 112.

[0216] The first exhaust unit 201A exhausts gas from inside the processing chamber 200a. The configuration of the first exhaust unit 201A is similar to that of the exhaust unit 201 described with reference to FIG.

[0217] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 18(a) and Fig. 18(b). Fig. 18(a) is an enlarged schematic diagram of the blocking unit 10A located at paddle position P2. Fig. 18(b) is a bottom view of the blocking unit 10A. Fig. 18(a) shows a cross section of the blocking unit 10A.

[0218] 18(a), the fourth treatment liquid supply unit 44 further includes a shower channel 416 provided in the blocking unit 10A. The shower channel 416 is provided, for example, inside the canopy unit 111. The second supply pipe 412 distributes the hydrogen peroxide solution up to the shower channel 416. Therefore, the second supply pipe 412 supplies the hydrogen peroxide solution to the shower channel 416. The shower channel 416 distributes the hydrogen peroxide solution.

[0219] 18(b), the fourth treatment liquid supply unit 44 further includes a plurality of shower outlets 44c. The plurality of shower outlets 44c are provided on the underside 111a of the canopy portion 111. More specifically, the plurality of shower outlets 44c are provided on substantially the entire surface of the underside 111a of the canopy portion 111. The plurality of shower outlets 44c discharge the hydrogen peroxide solution in a shower-like manner. Thus, the fourth treatment liquid supply unit 44 further includes a shower nozzle provided on the canopy portion 111.

[0220] 18(a) communicates with a plurality of shower outlets 44c. Therefore, when hydrogen peroxide flows through the shower channel 416, the hydrogen peroxide is discharged in a shower-like manner from the plurality of shower outlets 44c.

[0221] 18(b), the outlet 121a of the first flow path 121 and the outlet 122a of the second flow path 122 open to the center of the lower surface 111a of the canopy portion 111. More specifically, the outlet 121a and the outlet 122a face the center of the substrate W held by the substrate holding portion 2. Therefore, sulfuric acid is discharged from the outlet 121a toward the center of the substrate W. In addition, the rinsing liquid is discharged from the outlet 122a toward the center of the substrate W.

[0222] Next, the paddle position P2 will be described with reference to Fig. 18(a). As shown in Fig. 18(a), the paddle position P2 is a position above the substrate W, where the side wall portion 112 of the top plate 11 does not contact the substrate W, and where the processing liquid does not leak out from the gap between the lower surface 112b of the side wall portion 112 of the top plate 11 and the upper surface of the substrate W. Therefore, similar to the ring member 71 described with reference to Fig. 2, the sulfuric acid liquid film LM1 and the SPM liquid film LM2 can be held by the side wall portion 112 of the top plate 11.

[0223] Next, the retracted position P3 will be described with reference to Fig. 19(a). Fig. 19(a) is an enlarged schematic diagram showing the interrupter 10A located at the retracted position P3. Fig. 19(a) shows a cross section of the interrupter 10A.

[0224] 19(a), the retracted position P3 is a position above the paddle position P2, a position that does not surround the SPM liquid film LM2 and the hydrogen peroxide liquid film LM3, and is a position below the standby position P1 shown in Fig. 16. More specifically, the retracted position P3 is a position inside the cup portion 6. Specifically, the retracted position P3 is a position where the lower surface 112b of the side wall portion 112 of the top plate 11 is below the upper end 6a of the cup portion 6.

[0225] According to this embodiment, since the lower surface 112b of the side wall portion 112 of the top plate 11 is located inside the cup portion 6 during the liquid film replacement process, the fumes generated from the substrate W flow inside the cup portion 6 due to the exhaust process by the first exhaust section 201A. As a result, the fumes are less likely to diffuse inside the process chamber 200a.

[0226] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 19(a). As shown in Fig. 19(a), the substrate processing apparatus 100 further includes a second exhaust section 201B.

[0227] 19(a), the second exhaust section 201B includes a suction mechanism 211, a suction pipe 212, and a suction flow path 214. The second exhaust section 201B sucks gas from the space above the substrate W held by the substrate holding section 2. In detail, the second exhaust section 201B sucks gas from the space between the top plate 11 and the substrate W, and exhausts the gas present in the space between the top plate 11 and the substrate W.

[0228] Suction flow path 214 is provided in blocking unit 10A. For example, suction flow path 214 is provided inside canopy unit 111. Suction flow path 214 allows gas to flow. An upstream end of suction flow path 214 opens to lower surface 111a of canopy unit 111, for example.

[0229] An upstream end of the suction pipe 212 is connected to a downstream end of the suction passage 214. A part of the suction pipe 212 is housed in the processing chamber 200a. The other part of the suction pipe 212 is disposed outside the processing chamber 200a. The suction pipe 212 allows gas to flow therethrough.

[0230] The suction mechanism 211 is disposed outside the processing chamber 200a. The suction mechanism 211 is connected to a downstream end of the suction pipe 212. The suction mechanism 211 is controlled by the control device 101 (control unit 102) to perform a suction operation of sucking in gas.

[0231] When the suction mechanism 211 performs a suction operation, gas is sucked from the upstream end of the suction passage 214. Specifically, gas is sucked from the space above the substrate W to the upstream end of the suction passage 214. The gas sucked into the suction passage 214 is sucked into the suction mechanism 211 via the suction passage 214 and the suction piping 212. The gas sucked into the suction mechanism 211 is guided to, for example, an exhaust facility provided in a factory in which the substrate processing apparatus 100 is installed.

[0232] According to this embodiment, for example, fumes generated from the substrate W during the liquid film replacement process can be sucked by the second exhaust section 201B and exhausted to the outside of the processing chamber 200a. Therefore, the fumes are less likely to diffuse inside the processing chamber 200a.

[0233] Next, the cleaning position P4 will be described with reference to Fig. 19(b). Fig. 19(b) is an enlarged schematic diagram of the blocking part 10A positioned at the cleaning position P4. As shown in Fig. 19(b), the cleaning position P4 is a position surrounding the liquid film LM4 of the rinsing liquid. Specifically, the cleaning position P4 is a position lower than the retracted position P3 and higher than the paddle position P2. More specifically, the cleaning position P4 is a position where the processing liquid leaks out from a gap between the lower surface 112b of the sidewall part 112 included in the blocking part 10A and the upper surface of the substrate W.

[0234] Next, the blocking unit 10A will be described with reference to Figures 18(a), 19(a) and 19(b). As shown in Figures 18(a), 19(a) and 19(b), the inner circumferential surface 112a and the lower surface 112b of the side wall portion 112 of the top plate 11 are liquid-contacting surfaces that come into contact with the processing liquid. In this embodiment, the inner circumferential surface 112a and the lower surface 112b of the side wall portion 112 of the top plate 11 include hydrophobic surfaces, similar to the ring member 71.

[0235] According to this embodiment, since the liquid contact surface of the side wall 112 is a hydrophobic surface, the time required for drying the side wall 112 can be shortened compared to when the liquid contact surface of the side wall 112 is hydrophilic. Also, since the liquid contact surface of the side wall 112 is a hydrophobic surface, the processing liquid is less likely to adhere to the liquid contact surface of the side wall 112 compared to when the liquid contact surface of the side wall 112 is hydrophilic. As a result, it is possible to reduce the possibility of a problem occurring in which the processing liquid drops onto the substrate W from the side wall 112 located at the standby position P1 shown in FIG.

[0236] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Figs. 16 to 22. Figs. 20 to 22 are flowcharts showing an example of the operation of the substrate processing apparatus 100 of this embodiment. In detail, Figs. 20 to 22 show an example of the flow of processing executed by the control device 101 (controller 102). The processing shown in Figs. 20 to 22 includes steps S51 to S73.

[0237] The processes of steps S51 to S53 shown in Fig. 20 are similar to steps S1 to S3 described with reference to Fig. 7, and therefore their description will be omitted. As shown in Fig. 20, when the rotation speed of the substrate W reaches the first rotation speed, the control device 101 (control unit 102) controls the moving unit 16 to lower the side wall portion 112 of the top plate 11 from the standby position P1 to the paddle position P2 (step S54).

[0238] When the sidewall portion 112 moves to the paddle position P2, the controller 101 (controller 102) causes the blocker 10A to discharge sulfuric acid (step S55). In particular, the controller 101 (controller 102) controls the sixth processing liquid supply unit 46 to discharge sulfuric acid from the discharge port 121a of the canopy portion 111. As a result, a sulfuric acid liquid film LM1 is formed on the upper surface of the substrate W. In addition, the sulfuric acid liquid film LM1 is held on the substrate W by the sidewall portion 112 of the top plate 11.

[0239] The process of step S56 is the same as step S6 described with reference to FIG. 7, and therefore description thereof will be omitted. The controller 101 (controller 102) performs SPM processing after stopping the rotation of the substrate W. More specifically, the controller 101 (controller 102) controls the fourth processing liquid supply unit 44 to discharge hydrogen peroxide solution in a shower-like manner from the multiple shower outlets 44c (step S57). As a result, a liquid film LM2 of SPM is formed on the upper surface of the substrate W, and the substrate W is processed. Note that, similar to step S7 described with reference to FIG. 7, the controller 101 (controller 102) controls the flow rate adjustment valve 415 during SPM processing to adjust the flow rate of hydrogen peroxide solution so that the mixture ratio of sulfuric acid and hydrogen peroxide solution falls within a predetermined range.

[0240] When a seventh preset time has elapsed since the start of the discharge of hydrogen peroxide solution, the control device 101 (control unit 102) controls the fourth treatment liquid supply unit 44 to stop the discharge of hydrogen peroxide. As a result, the SPM process ends. The seventh preset time is pre-stored in the memory unit 103. After the SPM process ends, the control device 101 (control unit 102) controls the moving unit 16 to raise the side wall portion 112 of the top plate 11 from the paddle position P2 to the retracted position P3 (step S58). As a result, the paddle state of the SPM liquid film LM2 is released.

[0241] The processes in steps S59 to S62 shown in FIG. 21 are similar to those in steps S9 to S12 described with reference to FIG. 8, and therefore will not be described again. As shown in FIG. 21, when the rotation speed of the substrate W reaches the third rotation speed, the control device 101 (control unit 102) controls the fourth processing liquid supply unit 44 to discharge hydrogen peroxide water in a shower-like manner from the multiple shower outlets 44c (step S63). As a result, the liquid film of the processing liquid on the substrate W is replaced from the liquid film LM2 of SPM to a liquid film LM3 of hydrogen peroxide water. Note that, similar to step S13 described with reference to FIG. 8, the control device 101 (control unit 102) controls the flow rate adjustment valve 415 during the liquid film replacement process to increase the flow rate of hydrogen peroxide water compared to that during the SPM process.

[0242] The processes of step S64 and step S65 shown in FIG. 21 are the same as steps S14 and S15 described with reference to FIG. 8, and therefore the description thereof will be omitted. After the control device 101 (control unit 102) has the substrate W held by the plurality of holding members 21, it executes a rinse process as shown in FIG. 22 (step S66). Specifically, after the control device 101 (control unit 102) has the substrate W held by the plurality of holding members 21, it controls the substrate rotation unit 3 to rotate the substrate W at a fourth rotation speed. When the rotation speed of the substrate W reaches the fourth rotation speed, the control device 101 (control unit 102) controls the sixth processing liquid supply unit 46 to discharge the rinse liquid from the blocking unit 10A in a continuous flow. Specifically, the control device 101 (control unit 102) controls the sixth processing liquid supply unit 46 to discharge the rinse liquid from the discharge port 122a of the canopy unit 111 in a continuous flow. As a result, the chemical liquid (hydrogen peroxide solution) on the substrate W is washed away by the rinse liquid, and a liquid film LM4 of the rinse liquid is formed on the substrate W.

[0243] During the rinsing process, the control device 101 (control unit 102) controls the moving unit 16 to lower the side wall 112 of the top plate 11 from the retreat position P3 to the cleaning position P4 (step S67). As a result, the side wall 112 of the top plate 11 is cleaned by the rinsing liquid. Note that the control device 101 (control unit 102) may control the substrate rotator 3 to change the rotation speed of the substrate W from the fourth rotation speed to the fifth rotation speed before lowering the side wall 112 of the top plate 11 from the retreat position P3 to the cleaning position P4. In other words, the rotation speed of the substrate W when cleaning the side wall 112 of the top plate 11 may be the fifth rotation speed.

[0244] After the rinsing process is completed, the control device 101 (control unit 102) controls the moving unit 16 to raise the side wall 112 of the top plate 11 to the drying position (step S68). As described with reference to FIG. 2, in this embodiment, the drying position is equal to the standby position P1.

[0245] The control device 101 (control unit 102) moves the side wall portion 112 of the top plate 11 to the drying position (standby position P1), and then executes the blocking unit drying process (step S69). Specifically, the control device 101 (control unit 102) controls the drying unit 9 to dry the side wall portion 112 of the top plate 11.

[0246] The processes in steps S70 to S73 shown in FIG. 22 are similar to those in steps S20 to S23 described with reference to FIG. 9, and therefore will not be described again.

[0247] Next, another example of the blocking unit 10A will be described with reference to Fig. 23. Fig. 23 is a diagram showing another example of the blocking unit 10A. As shown in Fig. 23, hydrogen peroxide solution may be discharged from the center of the top plate 11 (canopy portion 111) in the same manner as sulfuric acid and rinsing liquid.

[0248] 23 further includes a third flow path 123. The lower end of third flow path 123 opens into lower surface 111a of canopy portion 111 to form discharge port 123a. Discharge port 123a opens into the center of lower surface 111a of canopy portion 111. More specifically, discharge port 123a faces the center of substrate W held by substrate holding portion 2.

[0249] 23, the downstream end of the second supply pipe 412 is connected to the third flow path 123. Therefore, hydrogen peroxide is supplied to the third flow path 123 via the second supply pipe 412. Specifically, when the second on-off valve 414 is opened, hydrogen peroxide flows from the second supply pipe 412 into the third flow path 123. The third flow path 123 distributes the hydrogen peroxide toward the discharge port 123a. As a result, the hydrogen peroxide is discharged from the discharge port 123a. Specifically, the hydrogen peroxide is discharged from the discharge port 123a toward the center of the substrate W.

[0250] Above, the fourth embodiment of the present invention has been described with reference to Fig. 16 to Fig. 23. According to the fourth embodiment, it is possible to reduce the consumption of processing liquid, similarly to the first to third embodiments. Furthermore, according to the fourth embodiment, since the blocking part 10A blocks the area above the substrate W during substrate processing, fumes are less likely to diffuse within the processing chamber 200a.

[0251] In this embodiment, the substrate processing apparatus 100 discharges sulfuric acid from the outlet 121a. However, the substrate processing apparatus 100 may discharge sulfuric acid and hydrogen peroxide solution exclusively from the multiple shower outlets 44c.

[0252] [Embodiment 5] Next, a fifth embodiment of the present invention will be described with reference to Figures 24 to 31. However, differences from the first to fourth embodiments will be described, and descriptions of the same aspects as the first to fourth embodiments will be omitted. The fifth embodiment differs from the first to fourth embodiments in that the substrate processing unit 200 has a blocking unit 10B, a first inserted nozzle 43b, and a second inserted nozzle 42b. In this embodiment, the side wall 172 included in the blocking unit 10B corresponds to the "liquid film holding unit."

[0253] Fig. 24 is a diagram showing a schematic internal configuration of the substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. In detail, Fig. 24 shows a sidewall portion 172 located at the paddle position P2. Fig. 24 shows a cross section of the blocking portion 10B.

[0254] The substrate processing unit 200 performs a puddle process, an SPM process, a liquid film replacement process, a rinsing process, a substrate drying process, and a ring drying process, similar to the substrate processing unit 200 included in the substrate processing apparatus 100 of the fourth embodiment. As shown in Fig. 24, the substrate processing unit 200 includes a processing chamber 200a, a substrate holding unit 2, a substrate rotating unit 3, a cup unit 6, a blocking unit 10B, a moving unit 18, a first exhaust unit 201A, and a second exhaust unit 201B. The substrate processing apparatus 100 includes a processing liquid supply unit 4 and a drying unit 9.

[0255] Blocking section 10B blocks the area above substrate W held by substrate holding section 2. Specifically, blocking section 10B has a top plate 17. Top plate 17 faces substrate W held by substrate holding section 2 and blocks the area above substrate W. In other words, top plate 17 is positioned above substrate W and covers substrate W. Top plate 17 is an example of a "blocking member." Top plate 17 has a canopy portion 171 and a side wall portion 172.

[0256] Canopy portion 171 is substantially in the shape of an annular plate. Specifically, canopy portion 171 has a nozzle insertion hole 173. Nozzle insertion hole 173 is provided in the center of canopy portion 171 and penetrates canopy portion 171 in the vertical direction. The lower surface of canopy portion 171 faces the upper surface of substrate W held by substrate holding portion 2. Sidewall portion 172 is substantially cylindrical. Sidewall portion 172 protrudes downward from the outer periphery of canopy portion 171. Therefore, sidewall portion 172 is supported by canopy portion 171. Canopy portion 171 is an example of a "support portion".

[0257] Specifically, the side wall portion 172 is located above the substrate W held by the substrate holding portion 2 and faces the substrate W. The diameter of the side wall portion 172 is smaller than the diameter of the substrate W. More specifically, when the side wall portion 172 moves to the paddle position P2, the side wall portion 172 is located inside the multiple gripping members 21.

[0258] The top plate 17 has a shower channel 416 and a plurality of shower outlets 44c, similar to the top plate 11 shown in Figures 18(a) and 18(b). Furthermore, the top plate 17 has a suction channel 214, similar to the top plate 11 described with reference to Figure 19(a).

[0259] The moving unit 18 moves the blocking unit 10B in the vertical direction above the substrate W. Specifically, the moving unit 18 is controlled by the control device 101 (control unit 102) to raise and lower the blocking unit 10B. The control device 101 (control unit 102) controls the moving unit 18 to change the vertical position of the side wall portion 172 included in the blocking unit 10B. Specifically, the moving unit 18 raises and lowers the blocking unit 10B so that the side wall portion 172 of the top plate 17 moves among the standby position P1, the paddle position P2, the retracted position P3, and the cleaning position P4.

[0260] The moving unit 18 includes a connection part 181, a support arm 182, a base 183, and a moving mechanism 184. The connection part 181 connects the support arm 182 and the top plate 17 (blocking unit 10B) to connect the support arm 182 and the top plate 17 (blocking unit 10B). The connection part 181 may be connected to the tip of the support arm 182 and extend vertically downward from the tip of the support arm 182. The top plate 17 (blocking unit 10B) may be connected to the tip of the connection part 181. The support arm 182 supports the top plate 17 (blocking unit 10B) via the connection part 181. The configurations of the support arm 182, the base 183, and the moving mechanism 184 are similar to the nozzle arm 51, the nozzle base 52, and the nozzle moving mechanism 53 of the nozzle moving unit 5 described with reference to FIG. 2, and therefore detailed description thereof will be omitted.

[0261] In this embodiment, the processing liquid supply unit 4 includes a second processing liquid supply unit 42, a third processing liquid supply unit 43, and a fourth processing liquid supply unit 44. The third processing liquid supply unit 43 includes a first supply pipe 411, a first on-off valve 413, and a first inserted nozzle 43b. The fourth processing liquid supply unit 44 includes a second supply pipe 412, a second on-off valve 414, a flow rate control valve 415, a shower flow path 416, and a plurality of shower outlets 44c, similar to the fourth processing liquid supply unit 44 described with reference to FIG. 18(a) and FIG. 18(b). The second processing liquid supply unit 42 includes a rinse supply pipe 421, a rinse on-off valve 422, and a second inserted nozzle 42b. The first inserted nozzle 43b and the second inserted nozzle 42b are accommodated in the processing chamber 200a. Therefore, the substrate processing section 200 has a first insertion nozzle 43b and a second insertion nozzle 42b.

[0262] The third processing liquid supply unit 43 supplies sulfuric acid to the first inserted nozzle 43b via the first supply pipe 411. The first inserted nozzle 43b discharges sulfuric acid when sulfuric acid is supplied via the first supply pipe 411. The second processing liquid supply unit 42 supplies a rinsing liquid to the second inserted nozzle 42b via the rinse supply pipe 421. The second inserted nozzle 42b discharges the rinsing liquid when the rinsing liquid is supplied via the rinse supply pipe 421. The configuration of the fourth processing liquid supply unit 44 is similar to that of the fourth processing liquid supply unit 44 described with reference to FIGS. 18(a) and 18(b), and therefore description thereof will be omitted.

[0263] In this embodiment, the drying unit 9 dries the side wall portion 172 included in the blocking unit 10B. Specifically, the drying unit 9 discharges gas from a drying nozzle 9a toward the side wall portion 172 to dry the side wall portion 172.

[0264] The first exhaust unit 201A exhausts gas from inside the processing chamber 200a. The configuration of the first exhaust unit 201A is similar to that of the exhaust unit 201 described with reference to FIG.

[0265] The second exhaust section 201B sucks gas from the space between the top plate 17 and the substrate W, and exhausts the gas present in the space between the top plate 17 and the substrate W. The configuration of the second exhaust section 201B is similar to that of the second exhaust section 201B described with reference to FIG. 19(a), and therefore a description thereof will be omitted.

[0266] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 25. Fig. 25 is a diagram showing the configuration of a substrate processing section 200 included in the substrate processing apparatus 100 of this embodiment. As shown in Fig. 25, the substrate processing section 200 further includes a third nozzle movement section 5C and a fourth nozzle movement section 5D.

[0267] The third nozzle moving unit 5C moves the first inserted nozzle 43b in the vertical and horizontal directions. Specifically, the third nozzle moving unit 5C moves the first inserted nozzle 43b from the third nozzle standby position to the nozzle insertion hole 173 of the blocking unit 10B (top plate 17) and inserts the first inserted nozzle 43b into the nozzle insertion hole 173. The first inserted nozzle 43b ejects sulfuric acid toward the upper surface of the substrate W while being inserted into the nozzle insertion hole 173. More specifically, when the first inserted nozzle 43b is inserted into the nozzle insertion hole 173, it faces the center position CT of the substrate W. Therefore, the first inserted nozzle 43b ejects sulfuric acid toward the center of the substrate W.

[0268] The third nozzle movement unit 5C has a connection unit 51C, a third nozzle arm 52C, a third nozzle base 53C, and a third nozzle movement mechanism 54C. The connection unit 51C is connected to the third nozzle arm 52C and the first inserted nozzle 43b, and connects the third nozzle arm 52C and the first inserted nozzle 43b. The connection unit 51C may be connected to, for example, the tip of the third nozzle arm 52C and extend vertically downward from the tip of the third nozzle arm 52C. The first inserted nozzle 43b may be connected to the tip of the connection unit 51C. The third nozzle arm 52C supports the first inserted nozzle 43b via the connection unit 51C.

[0269] The third nozzle movement mechanism 54C swings the third nozzle base 53C about a fifth rotation axis AX5 extending in the vertical direction as the center of rotation, thereby swinging the third nozzle arm 52C along a horizontal plane. The third nozzle movement mechanism 54C also raises and lowers the third nozzle base 53C in the vertical direction, thereby raising and lowering the third nozzle arm 52C. The configurations of the third nozzle arm 52C, the third nozzle base 53C, and the third nozzle movement mechanism 54C are similar to the nozzle arm 51, the nozzle base 52, and the nozzle movement mechanism 53 of the nozzle movement unit 5 described with reference to FIG. 2, and therefore detailed description thereof will be omitted.

[0270] The fourth nozzle movement unit 5D, like the third nozzle movement unit 5C, moves the second inserted nozzle 42b from the fourth nozzle standby position to the nozzle insertion hole 173 and inserts the second inserted nozzle 42b into the nozzle insertion hole 173. Like the first inserted nozzle 43b, when the second inserted nozzle 42b is inserted into the nozzle insertion hole 173, it faces the center position CT of the substrate W. Therefore, the second inserted nozzle 42b ejects the rinsing liquid toward the center of the substrate W.

[0271] The fourth nozzle moving section 5D has a connection section 51D, a fourth nozzle arm 52D, a fourth nozzle base 53D, and a fourth nozzle moving mechanism 54D, similar to the third nozzle moving section 5C. The fourth nozzle moving mechanism 54D swings the fourth nozzle base 53D about a sixth rotation axis AX6 extending in the vertical direction as a rotation center, thereby swinging the fourth nozzle arm 52D along a horizontal plane. The fourth nozzle moving mechanism 54D also raises and lowers the fourth nozzle base 53D in the vertical direction, thereby raising and lowering the fourth nozzle arm 52D. The configuration of the fourth nozzle moving section 5D is similar to that of the third nozzle moving section 5C, and therefore a detailed description thereof will be omitted.

[0272] Next, the operation of the substrate processing apparatus 100 of this embodiment will be described with reference to Figs. 24 to 29. Figs. 26 to 29 are flowcharts showing an example of the operation of the substrate processing apparatus 100 of this embodiment. In detail, Figs. 26 to 29 show an example of the flow of processing executed by the control device 101 (controller 102). The processing shown in Figs. 26 to 29 includes steps S111 to S137.

[0273] The processes of steps S111 to S113 shown in Fig. 26 are similar to steps S1 to S3 described with reference to Fig. 7, and therefore will not be described again. As shown in Fig. 26, when the rotation speed of the substrate W reaches the first rotation speed, the control device 101 (control unit 102) controls the moving unit 18 to lower the side wall portion 172 of the top plate 17 from the standby position P1 to the paddle position P2 (step S114).

[0274] The control device 101 (control unit 102) moves the side wall portion 172 of the top plate 17 from the standby position P1 to the paddle position P2, and then controls the third nozzle movement unit 5C to insert the first insertion nozzle 43b into the nozzle insertion hole 173 of the top plate 17, as described with reference to Figure 25 (step S115).

[0275] After inserting the first inserted nozzle 43b into the nozzle insertion hole 173 of the top plate 17, the control device 101 (control unit 102) controls the third processing liquid supply unit 43 to discharge sulfuric acid from the first inserted nozzle 43b (step S116). As a result, a sulfuric acid liquid film LM1 is formed on the upper surface of the substrate W. In addition, the sulfuric acid liquid film LM1 is held on the substrate W by the side wall portion 172 of the top plate 17.

[0276] The process of step S117 is similar to step S6 described with reference to Fig. 7, and therefore description thereof will be omitted. As shown in Fig. 27, after stopping the rotation of the substrate W, the control device 101 (control unit 102) controls the fourth processing liquid supply unit 44 to discharge hydrogen peroxide solution in a shower shape from the multiple shower outlets 44c (step S118), similar to step S57 described with reference to Fig. 20. As a result, a liquid film LM2 of SPM is formed on the upper surface of the substrate W, and the substrate W is processed.

[0277] After the SPM process is completed, the control device 101 (control unit 102) controls the moving unit 18 and the fourth nozzle moving unit 5D to raise the top plate 17 and the second insertion nozzle 42b so that the side wall 172 of the top plate 17 rises from the paddle position P2 to the retreat position P3 (step S119). As a result, the paddle state of the SPM liquid film LM2 is released.

[0278] The processes in steps S120 to S123 are similar to those in steps S9 to S12 described with reference to Fig. 8, and therefore will not be described again. When the rotation speed of the substrate W reaches the third rotation speed, the control device 101 (control unit 102) controls the fourth processing liquid supply unit 44 to discharge the hydrogen peroxide solution in a shower-like manner from the multiple shower outlets 44c (step S124), similar to step S63 described with reference to Fig. 21. As a result, the liquid film of the processing liquid on the substrate W is replaced from the liquid film LM2 of SPM to a liquid film LM3 of hydrogen peroxide solution.

[0279] The processes of step S125 shown in Fig. 27 and step S126 shown in Fig. 28 are similar to steps S14 and S15 described with reference to Fig. 8, and therefore the description thereof will be omitted. As shown in Fig. 28, the control device 101 (control unit 102) causes the substrate W to be gripped by the multiple gripping members 21, and then controls the third nozzle moving unit 5C to retreat the first inserted nozzle 43b from the nozzle insertion hole 173 to the third nozzle waiting position (step S127). After moving the first inserted nozzle 43b to the third nozzle waiting position, the control device 101 (control unit 102) controls the fourth nozzle moving unit 5D to insert the second inserted nozzle 42b into the nozzle insertion hole 173, as described with reference to Fig. 25 (step S128).

[0280] After inserting the second insertion nozzle 42b into the nozzle insertion hole 173, the control device 101 executes a rinse process (step S129). Specifically, the control device 101 (controller 102) controls the substrate rotation unit 3 to rotate the substrate W at a fourth rotation speed. When the rotation speed of the substrate W reaches the fourth rotation speed, the control device 101 (controller 102) controls the second processing liquid supply unit 42 to eject the rinse liquid from the second insertion nozzle 42b in a continuous flow. As a result, the chemical liquid (hydrogen peroxide solution) on the substrate W is washed away by the rinse liquid, and a liquid film LM4 of the rinse liquid is formed on the substrate W.

[0281] During the rinsing process, the control device 101 (control unit 102) controls the moving unit 18 to lower the side wall portion 172 of the top plate 17 from the retreat position P3 to the cleaning position P4 (step S130). As a result, the side wall portion 172 of the top plate 17 is cleaned by the rinsing liquid. Note that the control device 101 (control unit 102) may control the substrate rotator 3 to change the rotation speed of the substrate W from the fourth rotation speed to the fifth rotation speed before lowering the side wall portion 172 of the top plate 17 from the retreat position P3 to the cleaning position P4. In other words, the rotation speed of the substrate W when cleaning the side wall portion 172 of the top plate 17 may be the fifth rotation speed.

[0282] After the rinsing process is completed, the control device 101 (control unit 102) controls the fourth nozzle moving unit 5D to retract the second inserted nozzle 42b from the nozzle insertion hole 173 to the fourth nozzle standby position (step S131). After moving the second inserted nozzle 42b to the fourth nozzle standby position, the control device 101 (control unit 102) controls the moving unit 18 to raise the side wall portion 112 of the top plate 11 to the drying position (step S132). As described with reference to FIG. 2, in this embodiment, the drying position is equal to the standby position P1.

[0283] 29, the control device 101 (control unit 102) moves the side wall portion 172 of the top plate 17 to the drying position (standby position P1), and then executes a blocking unit drying process (step S133). Specifically, the control device 101 (control unit 102) controls the drying unit 9 to dry the side wall portion 172 of the top plate 17.

[0284] The processes in steps S134 to S137 shown in FIG. 29 are similar to those in steps S20 to S23 described with reference to FIG. 9, and therefore will not be described again.

[0285] Next, a first modified example of the substrate processing apparatus 100 of the present embodiment will be described with reference to Fig. 30. Fig. 30 is a diagram illustrating a schematic internal configuration of a first modified example of the substrate processing section 200 included in the substrate processing apparatus 100 of the present embodiment.

[0286] 30, the second exhaust unit 201B includes a suction mechanism 211, a suction pipe 212, and a third inserted nozzle 215. The third inserted nozzle 215 is accommodated in the processing chamber 200a. Thus, the substrate processing unit 200 has the third inserted nozzle 215.

[0287] The third inserted nozzle 215, like the first inserted nozzle 43b and the second inserted nozzle 42b, is movable between the fifth nozzle standby position and the nozzle insertion hole 173. In detail, the substrate processing unit 200 further includes a fifth nozzle moving unit (not shown). The fifth nozzle moving unit is controlled by the control device 101 (control unit 102) and moves the third inserted nozzle 215, like the third nozzle moving unit 5C and the fourth nozzle moving unit 5D.

[0288] The upstream end of the suction pipe 212 is connected to the third inserted nozzle 215. The control device 101 (control unit 102) controls the fifth nozzle moving unit to insert the third inserted nozzle 215 into the nozzle insertion hole 173, and then drives the suction mechanism 211. As a result, gas is sucked into the third inserted nozzle 215 from the space between the top plate 17 and the substrate W, and the gas present in the space between the top plate 17 and the substrate W is exhausted.

[0289] In detail, after the liquid film replacement process, the control device 101 (control unit 102) inserts the third insertion nozzle 215 into the nozzle insertion hole 173 and drives the suction mechanism 211. As a result, fumes generated from the substrate W by the liquid film replacement process are sucked by the second exhaust unit 201B and exhausted to the outside of the processing chamber 200a. The third insertion nozzle 215 is an example of a "suction nozzle."

[0290] Next, a second modified example of the substrate processing apparatus 100 of the present embodiment will be described with reference to Fig. 31. Fig. 31 is a diagram illustrating a schematic internal configuration of a second modified example of the substrate processing section 200 included in the substrate processing apparatus 100 of the present embodiment.

[0291] In the configuration shown in FIG. 31, the top plate 17 has a first nozzle insertion hole 173a and a second nozzle insertion hole 173b. The fourth processing liquid supply unit 44 includes a second supply pipe 412, a second opening / closing valve 414, a flow rate control valve 415, and a fourth inserted nozzle 44d. The second exhaust unit 201B includes a suction mechanism 211, a suction pipe 212, and a third inserted nozzle 215, similar to the second exhaust unit 201B shown in FIG. 30. The third inserted nozzle 215 and the fourth inserted nozzle 44d are accommodated in the processing chamber 200a. Therefore, the substrate processing unit 200 has the third inserted nozzle 215 and the fourth inserted nozzle 44d.

[0292] 24 and 25, the first nozzle insertion hole 173a penetrates the center of the top plate 17 in the vertical direction. The second nozzle insertion hole 173b penetrates the top plate 17 in the vertical direction at a position different from that of the first nozzle insertion hole 173a.

[0293] The first inserted nozzle 43b is movable between the third standby position and the first nozzle insertion hole 173a. The second inserted nozzle 42b is movable between the fourth standby position and the first nozzle insertion hole 173a. The third nozzle movement unit 5C described with reference to FIG. 25 moves the first inserted nozzle 43b between the third standby position and the first nozzle insertion hole 173a. The fourth nozzle movement unit 5D described with reference to FIG. 25 moves the second inserted nozzle 42b between the fourth standby position and the first nozzle insertion hole 173a.

[0294] The third inserted nozzle 215 is movable between a fifth nozzle standby position and the second nozzle insertion hole 173b. In detail, the substrate processing unit 200 further includes a fifth nozzle moving unit (not shown). The fifth nozzle moving unit is controlled by the control device 101 (control unit 102) to move the third inserted nozzle 215 between the fifth nozzle standby position and the second nozzle insertion hole 173b.

[0295] The fourth inserted nozzle 44d is movable between a sixth nozzle standby position and the first nozzle insertion hole 173a. In detail, the substrate processing unit 200 further includes a sixth nozzle moving unit (not shown). The sixth nozzle moving unit is controlled by the control device 101 (control unit 102) to move the fourth inserted nozzle 44d between the sixth nozzle standby position and the first nozzle insertion hole 173a.

[0296] The upstream end of the second supply pipe 412 is connected to the fourth inserted nozzle 44d. The control device 101 (control unit 102) controls the sixth nozzle movement unit to insert the fourth inserted nozzle 44d into the first nozzle insertion hole 173a, and then controls the fourth processing liquid supply unit 44 to supply hydrogen peroxide to the fourth inserted nozzle 44d. As a result, hydrogen peroxide is discharged from the fourth inserted nozzle 44d toward the center of the substrate W.

[0297] The control device 101 (control unit 102) controls the fifth nozzle moving unit to insert the third insertion nozzle 215 into the second nozzle insertion hole 173b, and then drives the suction mechanism 211. As a result, gas is sucked from the space above the substrate W to the upstream end of the suction flow path 214.

[0298] In detail, the control device 101 (control unit 102) drives the suction mechanism 211 when supplying hydrogen peroxide solution to the substrate W. As a result, fumes generated from the substrate W are sucked by the second exhaust unit 201B and exhausted to the outside of the processing chamber 200a.

[0299] 24 to 31, the fifth embodiment of the present invention has been described above. According to the fifth embodiment, it is possible to reduce the consumption of processing liquid, similarly to the first to fourth embodiments. Furthermore, according to the fifth embodiment, since the blocking portion 10B blocks the area above the substrate W during substrate processing, fumes are less likely to diffuse within the processing chamber 200a.

[0300] [Embodiment 6] Next, a sixth embodiment of the present invention will be described with reference to Fig. 32. However, differences from the first to fifth embodiments will be described, and a description of the same aspects as the first to fifth embodiments will be omitted. The sixth embodiment differs from the first to fifth embodiments in that the substrate processing unit 200 has a blocking unit 10D. In this embodiment, the side wall 192 of the top plate 19 included in the blocking unit 10D corresponds to the "liquid film retaining unit."

[0301] Fig. 32 is a diagram showing a schematic internal configuration of the substrate processing unit 200 included in the substrate processing apparatus 100 of the present embodiment. In detail, Fig. 32 shows a sidewall portion 192 located at the paddle position P2. Fig. 32 shows a cross section of the blocking unit 10D.

[0302] The substrate processing unit 200 performs a puddle process, an SPM process, a liquid film replacement process, a rinsing process, a substrate drying process, and a ring drying process, similar to the substrate processing unit 200 included in the substrate processing apparatus 100 of the fourth embodiment. As shown in Fig. 32, the substrate processing unit 200 includes a processing chamber 200a, a substrate holding unit 2, a substrate rotating unit 3, a cup unit 6, a blocking unit 10D, a first moving unit 92, a second moving unit 194, and an exhaust unit 201. The substrate processing apparatus 100 includes a processing liquid supply unit 4 and a drying unit 9.

[0303] The processing liquid supply unit 4 includes a seventh processing liquid supply unit 47. The seventh processing liquid supply unit 47 exclusively supplies sulfuric acid, hydrogen peroxide solution, and a rinsing liquid to the substrate W held by the substrate holding unit 2. Specifically, the seventh processing liquid supply unit 47 includes a discharge nozzle 47a, a first supply pipe 411, a second supply pipe 412, a first on-off valve 413, a second on-off valve 414, a flow rate adjustment valve 415, a rinsing supply pipe 421, and a rinsing on-off valve 422.

[0304] The discharge nozzle 47a extends in the vertical direction. The discharge nozzle 47a is movable in the vertical direction. More specifically, the discharge nozzle 47a penetrates the center of the blocking part 10D. The lower end surface (discharge surface) of the discharge nozzle 47a faces the substrate W held by the substrate holding part 2. Furthermore, the discharge nozzle 47a penetrates the upper wall of the processing chamber 200a and extends from the inside to the outside of the processing chamber 200a. A through hole through which the discharge nozzle 47a is inserted is formed in the upper wall of the processing chamber 200a.

[0305] The discharge nozzle 47a exclusively discharges sulfuric acid, hydrogen peroxide solution, and a rinsing liquid toward the substrate W held by the substrate holder 2. In detail, the downstream end of the first supply pipe 411 and the downstream end of the rinse supply pipe 421 are connected to the discharge nozzle 47a. The downstream end of the second supply pipe 412 is connected to the first supply pipe 411, similar to the second supply pipe 412 described with reference to FIG.

[0306] For example, when the state changes from one in which the first on-off valve 413, the second on-off valve 414, and the rinse on-off valve 422 are closed to one in which only the first on-off valve 413 is open, sulfuric acid flows from the first supply pipe 411 to the discharge nozzle 47a. As a result, sulfuric acid is supplied to the discharge nozzle 47a via the first supply pipe 411, and is discharged from the discharge nozzle 47a.

[0307] Furthermore, when the state changes from one in which the first on-off valve 413, the second on-off valve 414, and the rinse on-off valve 422 are closed to one in which only the second on-off valve 414 is open, hydrogen peroxide flows from the second supply piping 412 to the first supply piping 411. The first supply piping 411 distributes the hydrogen peroxide flowing in from the second supply piping 412 to the discharge nozzle 47a. As a result, the hydrogen peroxide is supplied to the discharge nozzle 47a via the first supply piping 411, and the hydrogen peroxide is discharged from the discharge nozzle 47a.

[0308] Similarly, when the state where the first on-off valve 413, the second on-off valve 414, and the rinse on-off valve 422 are all closed changes to a state where only the rinse on-off valve 422 is open, the rinse liquid flows from the rinse supply pipe 421 to the discharge nozzle 47a. As a result, the rinse liquid is supplied to the discharge nozzle 47a via the rinse supply pipe 421, and the rinse liquid is discharged from the discharge nozzle 47a.

[0309] The blocking unit 10D blocks the area above the substrate W held by the substrate holding unit 2. Specifically, the blocking unit 10D has a top plate 19, a space forming unit 91, a first elastic member 93, a second elastic member 94, and a connecting unit 193.

[0310] When blocking part 10D is in the lower position, space forming part 91, together with cup part 6, forms a space around the substrate W held by substrate holding part 2. Specifically, space forming part 91, together with cup part 6, forms a substantially sealed space around the substrate W. The substantially sealed space refers to the space inside space forming part 91 and cup part 6. Figure 32 shows blocking part 10D in the lower position.

[0311] Here, the substantially sealed space indicates that the space formed by the space forming portion 91 and the cup portion 6 is in communication with the outside. For example, the substantially sealed space is in communication with the outside through a gap between the space forming portion 91 and the cup portion 6 and a gap in the cup portion 6.

[0312] Specifically, the space forming portion 91 has a canopy portion 911 and a side wall portion 912. The canopy portion 911 is substantially in the shape of an annular plate. Specifically, the canopy portion 911 has a through hole. The through hole is provided in the center of the canopy portion 911 and passes through the canopy portion 911 in the vertical direction. The side wall portion 912 is substantially cylindrical and protrudes downward from the outer periphery of the canopy portion 911. The diameter of the side wall portion 912 is larger than the diameter of the spin base 22, and the side wall portion 912 faces the upper end 6a of the cup portion 6.

[0313] The top plate 19 is disposed inside the space forming portion 91. When the blocking portion 10D is in the lower position, the top plate 19 is located within a substantially sealed space. The top plate 19 faces the substrate W held by the substrate holding portion 2 and blocks the substrate W from above. In other words, the top plate 19 is located above the substrate W and covers the substrate W. The top plate 19 is an example of a "blocking member." The top plate 19 has a canopy portion 191 and a side wall portion 192.

[0314] Canopy portion 191 is substantially in the shape of an annular plate. Specifically, canopy portion 191 has a through hole. The through hole is provided in the center of canopy portion 191 and passes through canopy portion 191 in the vertical direction. The lower part of discharge nozzle 47a is inserted through the through hole of canopy portion 191. Canopy portion 191 is fixed to discharge nozzle 47a inserted through the through hole of canopy portion 191.

[0315] The lower surface of canopy portion 191 faces the upper surface of substrate W held by substrate holding portion 2. Sidewall portion 192 is approximately cylindrical. Sidewall portion 192 protrudes downward from the outer periphery of canopy portion 191. Sidewall portion 192 is therefore supported by canopy portion 191. Canopy portion 191 is an example of a "support portion".

[0316] Specifically, the side wall portion 192 is located above the substrate W held by the substrate holding portion 2 and faces the substrate W. The diameter of the side wall portion 192 is smaller than the diameter of the substrate W. More specifically, when the side wall portion 192 moves to the paddle position P2, the side wall portion 192 is located inside the multiple gripping members 21.

[0317] The connecting portion 193 is substantially annular. Specifically, the connecting portion 193 has a through hole. The through hole is provided in the center of the connecting portion 193 and passes through the connecting portion 193 in the vertical direction. The diameter of the connecting portion 193 is smaller than the diameter of the through hole provided in the canopy portion 911 of the space forming portion 91. The connecting portion 193 is fixed to the discharge nozzle 47a. Specifically, the connecting portion 193 is fixed to the discharge nozzle 47a inserted into the through hole of the connecting portion 193. The connecting portion 193 passes through the through hole provided in the canopy portion 911 of the space forming portion 91 when the discharge nozzle 47a moves up and down.

[0318] The first telescopic member 93 is freely telescopic in the vertical direction. The first telescopic member 93 is, for example, a bellows. The first telescopic member 93 is cylindrical and extends in the vertical direction. The lower end of the first telescopic member 93 is connected to the edge of a through hole provided in the canopy portion 911 of the space forming portion 91. The first telescopic member 93 extends upward from the canopy portion 911 of the space forming portion 91. The upper end of the first telescopic member 93 is connected to the upper wall of the processing chamber 200a.

[0319] The second elastic member 94 is freely expandable and contractable in the vertical direction. The second elastic member 94 is, for example, a bellows. The second elastic member 94 is cylindrical and extends in the vertical direction. The lower end of the second elastic member 94 is connected to the peripheral edge of the connecting portion 193. The second elastic member 94 extends upward from the connecting portion 193. The upper end of the second elastic member 94 is connected to the upper wall of the processing chamber 200a.

[0320] The first moving unit 92 raises and lowers the blocking unit 10D between an upper position and a lower position. The upper position indicates a position higher than the lower position. Specifically, the first moving unit 92 is controlled by the control device 101 (control unit 102) to move the space forming unit 91 between the upper position and the lower position. The control device 101 (control unit 102) controls the first moving unit 92 to change the vertical position of the blocking unit 10D (space forming unit 91). In detail, the first moving unit 92 has a support arm 921, a base 922, and a moving mechanism 923. The configuration of the first moving unit 92 is substantially the same as that of the ring moving unit 8 described with reference to FIG. 2, and therefore the description thereof will be omitted.

[0321] The second moving part 194 is disposed, for example, outside the processing chamber 200a. When the blocking part 10A (space forming part 91) is located at the lower position, the second moving part 194 moves the discharge nozzle 47a in the vertical direction. As a result, the top plate 19 moves in the vertical direction above the substrate W.

[0322] Specifically, the second moving unit 194 is controlled by the control device 101 (control unit 102) to raise and lower the top plate 19. The control device 101 (control unit 102) controls the second moving unit 194 to change the vertical position of the side wall portion 192 of the top plate 19. In particular, when the blocking unit 10A (space forming unit 91) is located at the lower position, the second moving unit 194 raises and lowers the top plate 19 so that the side wall portion 192 of the top plate 19 moves between the paddle position P2, the retracted position P3, and the cleaning position P4. For example, the second moving unit 194 may include a support arm, a base, and a moving mechanism, similar to the first moving unit 92.

[0323] Furthermore, when the blocking section 10A (space forming section 91) is located at the upper position, the control device 101 (control section 102) controls the second moving section 194 to position the side wall section 192 of the top plate 19 at the standby position P1.

[0324] The sixth embodiment of the present invention has been described above with reference to Fig. 32. According to the sixth embodiment, as in the first to fifth embodiments, the consumption of the processing liquid can be reduced. Furthermore, according to the sixth embodiment, the position of the side wall portion 112 of the top plate 19 can be changed among the paddle position P2, the retracted position P3, and the cleaning position P4 while maintaining a state in which a substantially sealed space is formed around the substrate W. Therefore, fumes are less likely to diffuse within the processing chamber 200a.

[0325] The embodiments of the present invention have been described above with reference to the drawings (FIGS. 1 to 32). However, the present invention is not limited to the above embodiments, and can be implemented in various aspects without departing from the gist of the present invention. In addition, the components disclosed in the above embodiments can be modified as appropriate. For example, a certain component among all the components shown in one embodiment may be added to a component of another embodiment, or some of all the components shown in one embodiment may be deleted from the embodiment.

[0326] The drawings are mainly schematic illustrations of each component to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configurations of each component shown in the above embodiment are merely examples and are not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0327] 1 to 32, the rotation of the substrate W is stopped during the paddle processing, but during the paddle processing, the substrate W may be rotated at a rotation speed that does not cause the processing liquid to be discharged outside the substrate W. For example, during the paddle processing, the substrate W may be rotated at 10 rpm. [Industrial Applicability]

[0328] The present invention is useful in an apparatus for processing a substrate. [Explanation of symbols]

[0329] 2: Board holding part 3: Substrate rotation section 4: Processing liquid supply section 5: Nozzle moving part 5A: First nozzle moving part 5B: Second nozzle moving part 5C: 3rd nozzle moving part 5D: 4th nozzle moving part 6: Cup section 6a: Upper end 8: Ring moving part 9:Drying section 10A: Breaking section 10B: Breaking section 10D: Breaking section 11: Top plate 16: Moving part 17: Top plate 18: Moving part 19: Top plate 21: Gripping member 23: Support member 41: First processing liquid supply unit 41a: Discharge nozzle 42: Second processing liquid supply unit 42a: Rinse nozzle 42b: Second insertion nozzle 43: Third processing liquid supply unit 43a: Discharge nozzle 43b: First insertion nozzle 44: Fourth processing liquid supply unit 44a: Shower nozzle 44c: Shower outlet 44d: 4th insertion nozzle 45: Fifth processing liquid supply unit 45a: Chemical solution discharge nozzle 46: Sixth processing liquid supply unit 47: Seventh processing liquid supply unit 47a: Discharge nozzle 71: Ring member 71a: Inner peripheral surface 71b: Bottom surface 71c:Top surface 71d: Outer surface 91: Space forming part 92: First moving part 100: Substrate processing apparatus 101: Control device 102: Control unit 111: Canopy 112: Side wall 112a: Inner surface 112b: Bottom surface 171: Canopy 172: Side wall 173: Nozzle insertion hole 173a: First nozzle insertion hole 173b: Second nozzle insertion hole 191: Canopy 192: Side wall 194: Second moving part 200: Substrate processing section 201: Exhaust section 201A: First exhaust section 201B: Second exhaust section 215: 3rd insertion nozzle LM1:Liquid film LM2:Liquid film LM3:Liquid film LM4:Liquid film P1: Standby position P2: Paddle position P3: Evacuation position P4: Cleaning position W: Substrate

Claims

1. A substrate processing apparatus for processing a substrate, A substrate holder for holding the substrate; a processing liquid supply unit that supplies a processing liquid to the substrate held by the substrate holder; a liquid film holding part that is positioned above the substrate held by the substrate holding part, faces the substrate, surrounds a liquid film of the processing liquid formed on the substrate, and holds the liquid film of the processing liquid; a moving unit that moves the liquid film holding unit in a vertical direction above the substrate; a control unit that controls the moving unit to change the vertical position of the liquid film holding unit; The substrate processing apparatus includes:

2. the liquid film retaining unit has a liquid contact surface that comes into contact with the treatment liquid, The substrate processing apparatus according to claim 1 , wherein the liquid contact surface is water repellent with respect to the processing liquid.

3. a substrate rotation unit that rotates the substrate held by the substrate holding unit, The treatment liquid includes a chemical liquid.

3. The substrate processing apparatus of claim 1, wherein the control unit controls the substrate rotation unit to perform a paddle process that stops the rotation of the substrate while the liquid film of the chemical liquid is held by the liquid film holding unit, or a paddle process that rotates the substrate at a rotation speed at which the chemical liquid is not discharged outside the substrate.

4. The chemical solution includes a first chemical solution and a second chemical solution, The control unit is During the puddle treatment, the treatment liquid supply unit is controlled to generate a mixed liquid of the first chemical liquid and the second chemical liquid on the substrate; After the paddle process, the moving unit is controlled to move the liquid film holding unit from a paddle position where the liquid film of the mixed liquid is held to a retracted position that is above the paddle position and does not surround the liquid film of the mixed liquid; 4. The substrate processing apparatus of claim 3, further comprising: a processing unit for controlling a processing liquid supply unit to supply the second chemical liquid to the substrate and to discharge the mixed liquid from the substrate, the processing unit being configured to form a liquid film of the second chemical liquid on the substrate after the liquid film holding unit is moved to the retracted position.

5. 5. The substrate processing apparatus according to claim 4, wherein the control unit controls the substrate rotation unit to rotate the substrate at a rotation speed that reduces an amount of the mixed liquid on the substrate after moving the liquid film holding unit to the retracted position.

6. The substrate processing apparatus according to claim 4 , wherein the second chemical liquid has a lower temperature than the first chemical liquid.

7. The substrate processing apparatus according to claim 4 , wherein the processing liquid supply unit includes a shower nozzle that discharges the second chemical liquid toward the substrate in a shower shape.

8. The substrate processing apparatus according to claim 7 , wherein the processing liquid supply unit discharges the first chemical liquid from the shower nozzle.

9. The processing liquid supply unit includes: a discharge nozzle that discharges the second chemical liquid toward the substrate; a nozzle moving unit that moves the discharge nozzle above the substrate held by the substrate holding unit; Includes The substrate processing apparatus according to claim 4 , wherein the control unit, during the puddle processing, controls the nozzle moving unit to move the discharge nozzle, while controlling the processing liquid supply unit to discharge the second chemical liquid from the discharge nozzle.

10. The substrate processing apparatus according to claim 9 , wherein the processing liquid supply unit discharges the first chemical liquid from the discharge nozzle.

11. the substrate holder includes a support member for supporting the substrate, The substrate processing apparatus according to claim 3 , wherein the control unit causes the support member to support the substrate when the puddle process is performed.

12. the substrate holder includes a support member for supporting the substrate, The substrate processing apparatus according to claim 4 , wherein the control unit causes the support member to support the substrate when discharging the mixed liquid from the substrate.

13. the processing liquid supply unit further supplies a rinsing liquid to the substrate held by the substrate holder; the control unit controls the moving unit to move the liquid film holding unit from the retracted position to a cleaning position that is a position below the retracted position; the liquid film retaining unit is located at the cleaning position when the rinse liquid is supplied, The substrate processing apparatus according to claim 4 , wherein the cleaning position is a position above the paddle position and surrounds the liquid film of the rinsing liquid.

14. A drying unit that dries the liquid film holding unit is further provided, 14. The substrate processing apparatus according to claim 13, wherein the control unit controls the moving unit to move the liquid film holding unit from the cleaning position to a drying position above the cleaning position, and then controls the drying unit to dry the liquid film holding unit.

15. the processing liquid supply unit further supplies a rinsing liquid to the substrate held by the substrate holder; The control unit controls the moving unit to move the liquid film retaining unit from a paddle position where the liquid film of the chemical liquid is retained to a cleaning position that is a position above the paddle position, the liquid film retaining unit is located at the cleaning position when the rinse liquid is supplied, The substrate processing apparatus according to claim 3 , wherein the cleaning position is a position surrounding the liquid film of the rinsing liquid.

16. the processing liquid supply unit further supplies a rinsing liquid to the substrate held by the substrate holder; The control unit is controlling the moving unit to move the liquid film holding unit from a paddle position where the liquid film of the chemical liquid is held to a retreated position that is above the paddle position and does not surround the liquid film of the chemical liquid, and then controlling the processing liquid supply unit to supply the rinsing liquid to the substrate; During the supply of the rinsing liquid, the moving unit is controlled to move the liquid film retaining unit from the retreated position to a cleaning position that is a position above the paddle position; The substrate processing apparatus according to claim 3 , wherein the cleaning position is a position surrounding the liquid film of the rinsing liquid.

17. the substrate holder includes a support member for supporting the substrate, The substrate processing apparatus according to claim 15 , wherein the control unit causes the support member to support the substrate when the rinsing liquid is supplied.

18. The substrate processing apparatus of claim 15 , wherein the rinsing liquid has a lower temperature than the processing liquid.

19. a blocking member that blocks an area above the substrate held by the substrate holding unit, the blocking member includes the liquid film retaining portion, The substrate processing apparatus according to claim 1 , wherein the moving part moves the blocking member.

20. a blocking member that blocks an area above the substrate held by the substrate holding unit, the blocking member includes the liquid film retaining portion and a support portion that supports the liquid film retaining portion, the support portion faces the substrate and blocks an area above the substrate, The moving unit moves the blocking member, the processing liquid supply unit includes a shower nozzle provided on the support unit, The substrate processing apparatus according to claim 4 , wherein the shower nozzle ejects the second chemical liquid toward the substrate in a shower-like manner.

21. a cup portion that surrounds the substrate held by the substrate holding portion and receives the first chemical liquid and the second chemical liquid discharged from the substrate; a blocking member that blocks an area above the substrate held by the substrate holding unit; Further comprising: the blocking member includes the liquid film retaining portion, The moving unit moves the blocking member, The substrate processing apparatus according to claim 4 , wherein the retracted position is a position inside the cup portion.

22. The substrate processing apparatus according to claim 19 , further comprising an exhaust unit that exhausts gas from a space between the blocking member and the substrate.

23. a blocking member that blocks an area above the substrate held by the substrate holding unit, The moving unit moves the blocking member, the blocking member includes the liquid film retaining portion and a support portion that supports the liquid film retaining portion, the support portion faces the substrate and blocks an area above the substrate, The support portion has a nozzle insertion hole, the processing liquid supply unit includes an insertion nozzle that is inserted into the nozzle insertion hole, The substrate processing apparatus according to claim 4 , wherein the insertion nozzle ejects at least one of the first chemical liquid and the second chemical liquid toward the substrate while being inserted into the nozzle insertion hole.

24. an exhaust unit that exhausts gas from a space between the blocking member and the substrate; The exhaust unit includes a suction nozzle that is inserted into the nozzle insertion hole, The substrate processing apparatus according to claim 23 , wherein the suction nozzle sucks gas from a space between the blocking member and the substrate while being inserted into the nozzle insertion hole.

25. a cup portion that surrounds the substrate held by the substrate holding portion and receives the first chemical liquid and the second chemical liquid discharged from the substrate; a space forming portion that, together with the cup portion, forms a space around the substrate held by the substrate holding portion; a blocking member that blocks an area above the substrate held by the substrate holding unit; Further comprising: the blocking member includes the liquid film retaining portion, The substrate processing apparatus according to claim 4 , wherein the liquid film holding part moves vertically inside the space forming part.

Images