Method for influencing charged particle beam, multipole device, and charged particle beam apparatus

Abstract

To provide a multipole device having first and second multipoles provided on the same substrate.SOLUTION: A method includes directing a charged particle beam (11) through at least one aperture (102) of a multipole device (100, 200) including a first multipole (110, 210) having four or more first electrodes (111, 211) and a second multipole (120, 220) having four or more second electrodes (121, 221) arranged in a same cross-sectional plane, the first and second electrodes being arranged alternately around the at least one aperture (102), and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The embodiments described herein relate to charged particle beam devices, for example for inspection system applications, test system applications, lithography system applications, defect review or critical dimension setting applications, in particular to electron beam inspection devices, and more particularly to scanning electron microscopes. The embodiments described herein further relate to multipole devices for influencing a charged particle beam in a charged particle beam device, and methods of influencing a charged particle beam using a multipole device. In particular, the embodiments described herein relate to multipole devices and methods for influencing an electron beam in a particular manner, for example by deflecting, scanning and / or correcting the electron beam, especially in electronic inspection and imaging systems. [Background technology]

[0002] Modern semiconductor technologies create high demands for structuring and probing of specimens on the nanometer or even sub-nanometer scale. Process control, inspection or structuring on the micrometer and nanometer scale is often performed with charged particle beams, e.g. electron beams, which are generated, shaped, deflected and focused in charged particle beam devices such as electron microscopes or electron beam pattern generators. For inspection purposes, charged particle beams offer superior spatial resolution compared to, e.g., photon beams.

[0003] Inspection devices using charged particle beams, such as scanning electron microscopes (SEMs), have many functions in multiple industrial sectors, including but not limited to inspection of electronic circuits during manufacture, exposure systems for lithography, detection systems, defect inspection tools, and test systems for integrated circuits. Such particle beam systems can use fine beam probes with high current densities. For example, in the case of an SEM, a primary electron beam generates signal particles such as secondary electrons (SEs) and / or backscattered electrons (BSEs) that can be used to image and analyze a sample. Summary of the Invention [Problem to be solved by the invention]

[0004] However, it is difficult to rapidly inspect and / or image a sample with a small charged particle beam device. In particular, various scanning deflectors, alignment deflectors, lenses, beam correctors, and / or other beam optical components may be provided along the optical axis within a vacuum housing of the charged particle beam device and may consume a significant amount of space. However, space is generally limited in charged particle beam devices, especially in areas near the objective lens.

[0005] Some charged particle beam devices use multipole devices, e.g. electrostatic multipoles, for beam deflection and / or beam correction. Higher order multipoles, such as 16- or 32-poles, can be used for various purposes, e.g. as quadrupoles or as octopoles. However, typical higher order multipoles are complex devices, and it is difficult to ensure that each of the many electrodes is excited to the right voltage at the right time. Therefore, higher order multipoles are generally adapted to affect the charged particle beam in a specific way, e.g. to correct higher order aberrations.

[0006] In view of the above, it would be advantageous to provide a miniature multipole device adapted to flexibly and reliably influence a charged particle beam. Furthermore, it would be advantageous to provide a method for flexibly and reliably influencing a charged particle beam in a charged particle beam device, even when only limited space is available. Finally, it would be advantageous to provide a charged particle beam device suitable for influencing a charged particle beam in a desired manner within a limited space. [Means for solving the problem]

[0007] In view of the above, a method for influencing a charged particle beam propagating along an optical axis, a multipole device for influencing a charged particle beam propagating along an optical axis and a charged particle beam apparatus for inspecting or imaging a sample are provided by the independent claims.

[0008] According to a first aspect, there is provided a method of influencing a charged particle beam propagating along an optical axis, the method comprising directing the charged particles through at least one aperture of a multipole device including a first multipole with four or more first electrodes and a second multipole with four or more second electrodes arranged in a same cross-sectional plane, the four or more first electrodes and the four or more second electrodes being arranged alternately around the at least one aperture, and at least one of exciting the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner and exciting the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner.

[0009] According to another aspect, a multipole device for influencing a charged particle beam propagating along an optical axis is provided, the multipole device including a substrate with at least one aperture for the charged particle beam, the at least one aperture extending through the substrate along the optical axis, a first multipole including four or more first electrodes provided on the substrate, a second multipole including four or more second electrodes provided on the substrate, the four or more first electrodes and the four or more second electrodes being arranged in an alternating manner around the at least one aperture, a first power supply arrangement for connecting the first electrodes to a first voltage source, and a second power supply arrangement for connecting the second electrodes to a second voltage source.

[0010] The first power supply arrangement can be configured to excite the first multipole to provide a first field distribution for influencing the charged particle beam in a first manner, e.g., to deflect the charged particle beam ("beam shifting"), and the second power supply arrangement can be configured to excite the second multipole to provide a second field distribution for influencing the charged particle beam in a second manner, e.g., to scan the charged particle beam ("beam scanning"), and the first and second field distributions can be superimposed on each other.

[0011] According to another aspect, there is provided a charged particle beam device for imaging and / or inspecting a sample with a charged particle beam, in particular an electron beam, the charged particle beam device may include a charged particle beam source for generating a charged particle beam, an objective lens for focusing the charged particle beam on the sample, and a multipole device for influencing the charged particle beam, the multipole device being configured according to any of the embodiments described herein.

[0012] Charged particle beam instruments can provide a large field of view and allow large beam shifts when the multipole device is arranged near or inside the objective lens.

[0013] The multipole device may include a first multipole adapted for influencing the charged particle beam in a first manner, e.g., beam deflection ("beam shifting"), and a second multipole adapted for influencing the charged particle beam in a second manner, e.g., in particular for beam scanning simultaneously with beam shifting ("beam scanning").

[0014] The embodiments further relate to apparatus for performing the disclosed methods, including apparatus parts for performing the individual method actions. The methods can be performed by hardware parts, by a computer programmed with appropriate software, by any combination of the two, or in any other manner. Furthermore, the embodiments also relate to methods of operating the described apparatus.

[0015] Further advantages, features, aspects and details that can be combined with the embodiments described herein are evident from the dependent claims, the description and the drawings.

[0016] So that the above-described features of the present disclosure can be understood in detail, a more detailed description of what has been briefly summarized above may be had by reference to the following embodiments, the accompanying drawings of which relate to one or more embodiments and which are described below. [Brief description of the drawings]

[0017] [Figure 1] FIG. 2 is a schematic diagram of a multipole device according to embodiments described herein adapted to operate according to any of the methods described herein. [Diagram 2] FIG. 2 is a schematic diagram of a multipole device according to embodiments described herein adapted to operate according to any of the methods described herein. [Figure 3a] FIG. 3 shows the multipole device of FIG. 2 in a first mode of operation in which the first multipole generates a dipole field. [Figure 3b] FIG. 3 shows the multipole device of FIG. 2 in a first mode of operation in which the first multipole generates a dipole field. [Figure 3c] FIG. 3 shows the multipole device of FIG. 2 in a first mode of operation in which the first multipole generates a dipole field. [Figure 3d] FIG. 2 illustrates a dipole field produced by a conventional octopole. [Figure 4] 3 shows the multipole device of FIG. 2 in a second mode of operation in which the first multipole generates a quadrupole field. [Diagram 5] 1 is a schematic diagram of a charged particle beam device according to embodiments described herein. [Figure 6] 1 is a flow diagram illustrating a method for influencing a charged particle beam according to embodiments described herein. [Figure 7]1 is a flow diagram illustrating a method for influencing a charged particle beam according to embodiments described herein. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the figures. In the following description of the drawings, like reference numerals refer to like components. Generally, only the differences with respect to individual embodiments are described. Each example is provided for purposes of explanation and is not meant to be limiting. Furthermore, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to still yield further embodiments. It is intended that the description include such modifications and variations.

[0019] 1 is a schematic diagram of a multipole device 100 for influencing a charged particle beam propagating along an optical axis A according to an embodiment described herein. The multipole device 100 includes a substrate 103 with at least one aperture 102 for the charged particle beam. The at least one aperture 102 extends through the substrate 103 along the optical axis A.

[0020] The multipole device 100 comprises a first multipole 110 with four or more first electrodes 111 provided on a substrate 103 and a second multipole 120 with four or more second electrodes 121 provided on the substrate 103. The first electrodes 111 and the second electrodes 121 can be arranged on the same main surface of the substrate 103, in particular on the same cross-sectional plane perpendicularly intersecting the optical axis A. Accordingly, a charged particle beam propagating through the at least one aperture 102 can be influenced by the first multipole 110 and by the second multipole 120 in a beam interaction space at or near the center of the at least one aperture 102.

[0021] The first multipole 110 can be an electrostatic or magnetic multipole. The second multipole 120 can be an electrostatic or magnetic multipole. In some embodiments, the first multipole 110 and the second multipole 120 are both electrostatic multipoles. An electrostatic multipole is configured to affect a charged particle beam by an electric field, and the electrodes of the electrostatic multipole are generally conductors (e.g., conductive objects or traces) that can be set to a predetermined potential. A magnetic multipole is configured to affect a charged particle beam by a magnetic field, and the electrodes of the magnetic multipole are generally magnets (e.g., coils) that can provide a predetermined magnetic field.

[0022] As shown diagrammatically in FIG. 1 , the first electrodes 111 of the first multipole 110 can be arranged at equidistant angular positions around the at least one aperture 102, and the second electrodes 121 of the second multipole 120 can be arranged at equidistant angular positions around the at least one aperture 102. For example, when the first multipole 110 and the second multipole 120 are quadrupoles (as in FIG. 1 ), the four first electrodes 111 can be arranged such that two adjacent first electrodes each surround an angle of 90° with respect to the optical axis A (e.g., the first electrodes are arranged at positions Θ1=0°, 90°, 180°, 270°), and the four second electrodes 121 can be arranged such that two adjacent second electrodes each surround an angle of 90° with respect to the optical axis A (e.g., the second electrodes are arranged at positions Θ2=45°, 135°, 225°, 315°).

[0023] The four or more first electrodes 111 and the four or more second electrodes 121 are arranged in an alternating manner around the at least one aperture 102. In the figure, the first electrodes 111 are shown with a first hatching and the second electrodes 121 are shown with a second hatching, so that the alternating arrangement of the first electrodes 111 and the second electrodes 121 around the at least one aperture is clearly visible.

[0024] Thus, the multipole device 100 includes two separate multipoles arranged in an interleaved manner on the same substrate, the substrate forming a support for the electrodes. Since the two separate multipoles are arranged on the same substrate in the same cross-sectional plane and interact with the charged particle beam in the same beam interaction area, space can be saved and a compact multipole device is provided. For example, a multipole device with at least two separate multipoles can be placed in or near an objective lens, where space is typically limited.

[0025] A "multipole" can be understood as an arrangement of electrodes (e.g., electrodes for providing electric and / or magnetic fields) configured to affect a charged particle beam in a particular manner. The multipoles of the multipole devices described herein each have at least four electrodes. For example, the multipoles can be quadrupoles with four electrodes, octopoles with eight electrodes, or higher order multipoles such as 12-pole or 16-pole.

[0026] A quadrupole with four electrodes can of course be used to generate a quadrupole field, for example for aberration correction (e.g. astigmatism correction), but the quadrupole can also be used to generate a dipole field that can be applied in a selectable direction. Thus, the quadrupole can be used as a beam deflector for deflecting a beam in a selectable deflection direction. Similarly, an octopole can of course be used to generate an octopole field, but the octopole can also be used to generate a quadrupole field acting in a selectable direction (e.g. for astigmatism correction), and the octopole can also be used to generate a dipole field acting in a selectable direction (e.g. for deflecting a charged particle beam in a selectable deflection direction).

[0027] According to the embodiments described herein, two multipoles (at least quadrupoles or higher order multipoles) are provided in the same cross-sectional plane on the same substrate, so that the charged particle beam can be influenced in at least two different ways with one compact multipole device in a small beam interaction space. For example, the first multipole can be configured for beam correction and the second multipole can be configured for beam alignment, or the first multipole can be configured to deflect the beam to a specific region of interest of the sample ("beam shift") and the second multipole can be configured to scan the beam over the sample in the specific region of interest ("beam scan"). Hence, a flexible and compact multipole device is provided by the embodiments described herein.

[0028] The multipole device 100 may further comprise a first power supply arrangement 116 for connecting the first electrode 111 of the first multipole 110 to a first voltage source 115 and a second power supply arrangement 126 for connecting the second electrode 121 of the second multipole 120 to a second voltage source 125. By connecting each of the first and second multipoles to respective separate voltage sources, control of each multipole is facilitated and it is ensured that, in effect, two separate multipoles are provided. For example, it may be ensured that the first electrode 111 of the first multipole may be excited and controlled simultaneously at respective predefined voltages without adversely affecting and being adversely affected by the voltage source of the second electrode of the second multipole when the first and second multipoles are connected to different voltage sources. Furthermore, the first voltage source 115 may be particularly adapted for the task of the first multipole (e.g., a strong slowly varying or periodically constant beam deflection, also referred to herein as "beam shifting", advantageously performed by a slow high-voltage power supply), and the second voltage source 125 may be particularly adapted for the task of the second multipole (e.g., a rapid scanning of the charged particle beam, also referred to herein as "beam scanning", advantageously performed by a fast low-voltage power supply).

[0029] Thus, even though the multipole device 100 of FIG. 1 includes a total of eight electrodes arranged around at least one aperture 102, the multipole device 100 of FIG. 1 is substantially different from a conventional octopole with eight electrodes, which is powered by one single voltage source and can therefore only be excited in one way at a time, e.g., for either deflection or beam correction. Furthermore, since the conventional octopole is powered by one voltage source with eight output terminals, voltage changes in some of the output terminals will also affect the other output terminals, so that the conventional octopole can only apply one common field distribution provided by all electrodes of the octopole at one time. In contrast to the conventional octopole, the multipole device 100 of FIG. 1 includes two separate quadrupoles that can be controlled and operated completely independently by being connected to respective voltage sources via respective power supply arrangements. Each quadrupole can thus be tailored to a specific task; changes in the output voltage at the output terminal of the first voltage source do not affect the output terminal of the second voltage source; as a result, the first and second multipole can be controlled independently, thereby allowing more precise and more reliable beam control.

[0030] Specifically, the first multipole 110 can be excited to provide a first field distribution for affecting the charged particle beam in a first manner, and the second multipole 120 can be excited (concurrently or subsequently, as appropriate) to provide a second field distribution for affecting the charged particle beam in a second manner.

[0031] The multipole device 100 described herein can be used to affect a charged particle beam, in particular an electron beam, propagating along an optical axis A, as follows: The charged particle beam can be directed through at least one aperture 102 of the multipole device 100, which includes a first multipole 110 with four or more first electrodes 111 and a second multipole 120 with four or more second electrodes 121 arranged in a cross-sectional plane, the four or more first electrodes 111 and the four or more second electrodes 121 being arranged alternately around the at least one aperture 102.

[0032] The first multipole 110 can be excited to provide a first field distribution for affecting the charged particle beam in a first manner. Simultaneously or subsequently, the second multipole 120 can be excited to provide a second field distribution for affecting the charged particle beam in a second manner.

[0033] Affecting the charged particle beam in a first manner can be selected from the group consisting of beam deflection, beam scanning, aberration correction, stigmation, collimation, focusing, beam alignment, and blanking. Affecting the charged particle beam in a second manner can be selected from the group consisting of beam deflection, beam scanning, aberration correction, stigmation, collimation, focusing, beam alignment, and blanking. The second manner is generally different from the first manner. For example, the first field distribution can provide a shift of the charged particle beam to a particular area of ​​interest of the sample in the xy plane (which is the plane of the sample), and the second field distribution can provide a fast scanning of the beam across the sample in said area of ​​interest. In another example, the first field distribution can provide an aberration correction, e.g., astigmatism correction, of the charged particle beam, and the second field distribution can provide a fast beam scanning across the sample, or a beam alignment of the charged particle beam for propagation along a predetermined beam path. Other examples are possible where the two multipoles affect the charged particle beam in two different ways.

[0034] In some embodiments, which may be combined with other embodiments described herein, the first field distribution and / or the second field distribution may be selected from the group consisting of a dipole field with a selectable azimuthal angle, a quadrupole field with a selectable azimuthal angle, and an octapole field. For example, the first field distribution may be a dipole field with a selectable azimuthal angle, such that the charged particle beam is deflected in a particular direction defined by the selectable azimuthal angle. For example, the second field distribution may be a rapidly varying dipole field to provide beam scanning across the sample, e.g., raster scanning in an xy plane defined by the sample.

[0035] In some embodiments, which can be combined with other embodiments described herein, the first multipole 110 and the second multipole 120 are excited simultaneously to provide a first field distribution superimposed on a second field distribution. Hence, the charged particle beam can be simultaneously affected in two different ways by the two superimposed field distributions applied by the first and second multipoles. For example, the first field distribution can be a quadrupole field that provides astigmatism correction, and the second field distribution can be a dipole field that provides beam scanning, so that the charged particle beam is simultaneously corrected and scanned by the multipole device.

[0036] In some embodiments, the first field distribution and / or the second field distribution are dipole fields. In other words, the first multipole (including at least four electrodes) is configured to apply a first dipole field to the charged particle beam, and / or the second multipole (including at least four electrodes) is configured to apply a second dipole field to the charged particle beam, particularly at the same time. The two dipole fields can have different strengths, directions, and / or can change at different rates. The two dipole fields can be applied for different purposes, for example, to deflect and direct the beam to a predetermined region of interest of the sample ("beam shift") and to rapidly scan the charged particle beam across the sample. Hence, the two dipole fields may be substantially different in strength and change rate, as described in more detail below.

[0037] In particular, the first field distribution may be a first dipole field and the second field distribution may be a second dipole field, the first dipole field being stronger than the second dipole field. For example, at least temporarily, the ratio between the maximum field strength of the first dipole field and the maximum field strength of the second dipole field is 5:1 or more, in particular 10:1, or even 20:1 or more. The maximum field strength of the dipole field is generally located at the optical axis A, generally approximately in the center of the at least one aperture 102.

[0038] In some implementations, the first voltage source 115 and the second voltage source 125 can be different types of voltage sources. For example, the first and second voltage sources can be configured to provide different maximum output voltages and / or different maximum output voltage change rates. In particular, the second voltage source 125 can be adapted to change the output voltage more quickly than the first voltage source 115. Alternatively or additionally, the first voltage source 115 can be adapted to a higher maximum output voltage than the second voltage source 125. For example, the first voltage source 115 can be configured for a maximum output voltage of 100V or more and / or a maximum voltage change rate of less than 1GHz, for example in the MHz range. Alternatively or additionally, the second voltage source 125 can be configured for a maximum output voltage of 50V or less, in particular 20V or less, or even 10V or less, and / or a maximum voltage change rate of more than 1GHz. In particular, the first voltage source 115 can be a slow high-voltage power supply and / or the second voltage source 125 can be a fast low-voltage power supply.

[0039] In some embodiments, the first power arrangement 116 is configured for a higher voltage than the second power arrangement 126. In particular, the first power arrangement 116 can include a high voltage connection between each of the first electrodes 111 and the first voltage source 115. For example, the high voltage connection can be adapted for a voltage of 100V or more. The second power arrangement 126 can include a low voltage connection between each of the second electrodes 121 and the second voltage source 125. For example, the low voltage connection can be adapted for a voltage of 50V or less. In some implementations, the cross-sectional area of ​​the high voltage connection is larger than the cross-sectional area of ​​the low voltage connection. Alternatively or additionally, the second power arrangement 126 can be configured as a high speed connection between each of the second electrodes 121 and the second voltage source 125. For example, the high speed connection of the second power array 126 may be shielded and / or impedance matched to allow voltage change rates in the GHz range to be reliably transmitted to the second electrode of the second multipole.

[0040] 1 shows an embodiment of a multipole device 100 including two independent quadrupoles arranged in an interleaved manner in one cross-sectional plane. Space can be saved and charged particle beams can be influenced in different ways, synchronously or subsequently, within the same beam interaction space.

[0041] 2 shows another embodiment of a multipole device 200 for influencing a charged particle beam, in particular an electron beam, according to the embodiments described herein. Except for the number of electrodes of the first and second multipoles, the multipole device 200 is similar to the multipole device 100 of FIG. 1, therefore reference can be made to the above description, which will not be repeated here.

[0042] The multipole device 200 comprises a substrate 103 with at least one aperture 102 for a charged particle beam propagating along an optical axis A. Eight first electrodes 211 of a first multipole 210 are provided on the substrate 103 and eight second electrodes 221 of a second multipole 220 are provided on the substrate 103, in particular on the same main surface of the substrate, equiangularly surrounding the at least one aperture 102. The eight first electrodes 211 and the eight second electrodes 221 are arranged alternately around the at least one aperture 102.

[0043] Thus, the multipole device 200 of Fig. 2 includes two independent octopoles arranged in an interleaved manner in one cross-sectional plane: space can be saved and charged particle beams can be influenced in different ways, synchronously or subsequently, within the same beam interaction space.

[0044] According to the embodiments described herein, the first multipole 210 can be excited to provide a first field distribution for influencing the charged particle beam in a first manner, and the second multipole 220 can be excited to provide a second field distribution for influencing the charged particle beam in a second manner, in particular different from the first manner. For example, the first multipole 210 can apply a first dipole field to the charged particle beam, for example to deflect the charged particle beam to a region of interest of the sample to be inspected. The second multipole 220 can apply a second dipole field to the charged particle beam, for example to scan the charged particle beam in a raster scan pattern over the sample, in particular over the region of interest. The charged particle beam may be influenced in other ways, as described above with reference to FIG. 1. By simultaneously exciting the first and second multipoles, the first field distribution can be superimposed on the second field distribution.

[0045] According to some embodiments described herein, the first multipole 210 is a first octopole having eight first electrodes 211, the second multipole 220 is a second octopole having eight second electrodes 221, and the first octopole and the second octopole are independent octopoles that are independently controllable and operable. Accordingly, the multipole device 200 includes a total of 16 poles arranged around the at least one aperture 102, with eight first poles belonging to the first octopole, eight second poles belonging to the second octopole, and the eight poles of the first octopole and the eight poles of the second octopole being arranged alternately around the at least one aperture 102.

[0046] In some embodiments, the first multipole 210 and the second multipole 220 are electrostatic multipoles, and the first electrode 211 and the second electrode 221, respectively, are conductive parts that are provided on a substrate and configured to be set to a predetermined potential. A "substrate" can be understood as a support, e.g., a thin plate, for supporting the electrodes of the first and second multipoles. The substrate is not necessarily circular (as shown in the figures) but can also have different shapes. The substrate can include an insulating surface on which the electrodes are arranged.

[0047] The first multipole 210 can be configured to provide a first dipole field to deflect the charged particle beam, in particular to direct the beam to a predetermined region of interest of the sample over a predetermined period of time ("beam shift"), and the second multipole 220 can be configured to provide a second dipole field that is superimposed on the first dipole field to scan the charged particle beam across the sample.

[0048] The multipole device 200 described herein allows superimposing a large beam deflection in a predefined selectable deflection direction by the first multipole with a fast scanning of the charged particle beam in a predefined scan pattern, in particular allowing a slow deflection and a fast scanning of the charged particle beam simultaneously. In general, the deflection is relatively slow, but a relatively high deflection voltage is used to deflect the charged particle beam to a predefined region of interest of the sample. In general, the scan voltage is relatively fast changing, but with a relatively low maximum deflection voltage, for example, changing quickly between −10V and +10V in steps or continuously. As a result, it is advantageous to use two separately controllable octopoles, each octopole being powered by a respective power supply arrangement and a respective voltage source, so that each octopole is adapted to the task to be performed. Two independently operating and controllable octopoles with electrodes provided in the same cross-sectional plane are provided by the embodiments described herein.

[0049] A first power supply arrangement 116 can be provided for connecting the first electrode 211 to the first voltage source 115 and a second power supply arrangement 126 can be provided for connecting the second electrode 221 to the second voltage source 125. Hence, two independently controllable octopoles are arranged in an interleaved manner in one cross-sectional plane.

[0050] The first and second multipoles can be excited simultaneously to provide first and second field distributions for synchronously affecting the charged particle beam in a first and second manner.

[0051] Specifically, at least one or both of the first and second field distributions can be dipole fields. The first field distribution can be a slowly varying or periodically constant dipole field and the second field distribution can be a rapidly varying dipole field for scanning.

[0052] In some embodiments, the first field distribution is a first dipole field and the second field distribution is a second dipole field, the first dipole field being at least temporarily stronger than the second dipole field, e.g., by more than 5 times or more than 10 times. The first field distribution can be a dipole field that deflects the charged particle beam to a predetermined region of interest of the sample to be inspected, and the second field distribution can be a dipole field that scans the charged particle beam across the sample, particularly in the region of interest.

[0053] In some embodiments, the first field distribution is maintained for a predetermined time (e.g., one second or more) to deflect the charged particle beam onto a predetermined region of interest of the sample, while the second field distribution is changed to scan the charged particle beam over said predetermined region of interest.

[0054] After the region of interest has been scanned, e.g. in a raster scan manner, by varying the second field distribution, the first field distribution may be altered to deflect the charged particle beam into a predefined second region of interest of the sample to be inspected. The altered first field distribution may be maintained for a predefined time (e.g., one second or more) while the second field distribution is changed to scan the charged particle beam over said predefined second region of interest.

[0055] Thus, the sample inspection process can proceed by subsequently directing the charged particle beam to different regions of interest by varying the first field distribution provided by the first multipole. The first field distribution can be maintained at each region of interest for a predetermined time, so that each region of interest can be inspected by rapidly varying the second field distribution to scan the charged particle beam across the sample in the respective region of interest. This allows large sample surfaces to be inspected by varying the dipole fields provided by the first and second multipoles accordingly.

[0056] Reliable beam deflection superimposed with rapid beam scanning can be provided by connecting a first multipole to a first voltage source adapted for relatively slow but large beam deflection, and by connecting a second multipole to a second voltage source adapted for rapid voltage changes for beam scanning with a relatively low maximum voltage.

[0057] 3a-3c show the multipole device 200 of FIG. 2 in a first mode of operation, where a first field distribution, i.e. a first dipole field, is provided by the first electrodes of the first multipole 210, while a small or zero voltage V2≈0 is applied to the second electrodes of the second multipole 220. The dipole field can be provided by applying a voltage of V1*sin(θ1) to the first electrodes of the first multipole, where θ1 refers to the angular position of the respective first electrode (the position of θ1=0 can be chosen arbitrarily to apply the dipole field in a selectable direction), and V1 is the maximum voltage supplied by the first voltage source 115 at a particular time. As shown diagrammatically in FIG. 3a, the following voltages V are applied to the eight first electrodes of the first multipole 210 to provide the dipole field: V1*sin0°=0 V1*sin45°=+0.707*V1 V1*sin90°=+V1 V1*sin135°=+0.707*V1 V1*sin180°=0 V1*sin225°=-0.707*V1 V1*sin270°=-V1 V1*sin315°=-0.707*V1. At the same time, a voltage smaller than the voltage V1 (for example, zero voltage, V2 = 0 as shown in FIG. 3a) is applied to the eight second electrodes of the second multipole 220, and the resulting field distribution is shown in FIG. 3a via electric field lines. As shown in FIG. 3a, an electric dipole field is created in the central region of the multipole device 200, and the optical axis A extends through the multipole device. As a result, the dipole field is applied to the charged particle beam propagating along the optical axis A, thereby causing a beam shift in the xy plane. Instead of V2 = 0 as shown in FIG. 3a, it is possible to apply a small variable voltage V2*sin(θ2) with V2 < V1 to the second electrodes in particular to cause beam scanning.

[0058] By adjusting the maximum voltage V1 supplied by the first voltage source, the deflection intensity caused by the first multipole 210 can be set as required. Further, the deflection direction can be set as required in the xy plane when θ2 is replaced by θ2 + ε with ε as a phase term. The field distribution exemplarily shown in FIG. 3a causes beam deflection in the x direction.

[0059] In particular, the dipole field created by the first multipole 210 of the multipole device 200 is different from the dipole field created by a conventional octupole (schematically shown in FIG. 3d) because the second electrodes of the second multipole 220 provided at a relatively small or zero potential (V2 ≈ 0 V in FIG. 3a) are respectively arranged between two adjacent first electrodes of the first multipole 210. Therefore, the potential on the ring line with a radius r (r = electrode radius) extending around the optical axis A repeatedly changes between V = V1*sin(θ1) and zero at the positions of the first and second electrodes as schematically shown by the solid line in FIG. 3b. In particular, for simplicity of calculation, the electrodes are here modeled as being infinitely small (i.e., point electrodes), and a linear voltage change is assumed between two adjacent point electrodes respectively.

[0060] In contrast, a conventional octopole creates an essentially sinusoidal electric potential depending on the angle θ on a ring line with radius r about the optical axis A, as shown diagrammatically by the dashed line in Figure 3b.

[0061] Knowing the voltage on a ring line of radius r (r = electrode radius), the multipole components of the resulting overall field distribution at the location of the optical axis A can be calculated using Fourier analysis. Figure 3c shows the intensity of the harmonics of the field distribution of Figure 3a. As can be seen in Figure 3c, the coefficient of the fundamental dipole is about 0.5 and all harmonics below order 7 are zero, but a clearly visible 7th harmonic with a coefficient of about -0.3 and a clearly visible 9th harmonic with a coefficient smaller than 0.2 are generated. The field of the 7th harmonic is R -6 Since the 7th harmonic contribution is proportional to the 1 / R (where R is the distance of the electron from the optical axis A), the contribution of the 7th harmonic is extremely small and can be practically ignored. Similarly, the contribution of the 9th harmonic is very small. Thus, even when a relatively small or zero voltage is simultaneously applied to the second electrode of the second multipole 220, a generally good dipole field can be created using the first multipole 210 of the multipole device 200 according to the embodiments described herein.

[0062] In some embodiments, the second dipole field is generated by the second multipole 220, while the first dipole field is generated by the first multipole. Specifically, a voltage of V2*sin(θ2) is applied to the second electrodes of the second multipole, where θ2 refers to the angular position of the respective second electrode (the position of θ2=0 can be arbitrarily chosen or changed to apply the dipole field in a selectable direction), and V2 is the maximum voltage supplied by the second voltage source at a particular time. The value V2 can be rapidly changed (e.g., from -V2 to +V2) to scan the charged particle beam along a line across the sample. In addition, the value of V2*sin(θ2) can be rapidly changed to raster scan the charged particle beam in the xy plane across the region of interest to be inspected.

[0063] In a typical embodiment, the maximum voltage V1 supplied by the first voltage source (which changes slowly or causes a periodic and constant beam shift) is substantially greater than, for example, five times or ten times greater than the maximum voltage V2 supplied by the second voltage source (which causes rapid beam scanning). For example, the first voltage source supplies a maximum voltage of 100 V or more, thereby being configured to enable a large-angle beam shift, while the second voltage source supplies a maximum voltage V2 of 20 V or less or 10 V or less, for example, to inspect a region of interest of a sample to find defects within the region of interest, thereby being configured to enable beam scanning over a predetermined (small) region of interest of the sample.

[0064] FIG. 4 shows the multipole device 200 of FIG. 2 in the second operating mode, where the first field distribution, i.e., the quadrupole field, is provided by the first electrode of the first multipole, while a small or zero voltage V2≈0 is applied to the second electrode of the second multipole. The quadrupole field can be provided by applying voltages of +V1, 0, +V1, 0, -V1, 0, -V1, 0 to the first electrodes in this order in the circumferential direction. The quadrupole field can be used, for example, for astigmatism correction.

[0065] Simulations have shown that the quadrupole field created by the first multipole at the position of the optical axis A is quite good even when a small (V2<V1) voltage or essentially zero voltage (V2≈0) is simultaneously applied to the second electrode of the second multipole, for example, to scan a charged particle beam or to perform higher-order correction.

[0066] Therefore, it has been shown that it is possible to simultaneously affect a charged particle beam in two ways by two multipoles (e.g., quadrupoles or octupoles) provided in one cross-sectional plane in an interleaved manner that has not been considered or demonstrated heretofore. A space-saving, small and flexibly usable multipole device is provided by the embodiments described herein.

[0067] It should be understood that the multipole device described herein can include more than two multipoles on the same substrate, for example, three independently operable quadrupoles, hexapoles, or octopoles on the same cross-sectional plane. The "alternating" arrangement of the first and second electrodes as used herein is meant to encompass an alternating arrangement of the first, second, and third (or further) electrodes in a circumferential direction around the optical axis. Furthermore, the multipole may be a quadrupole or a higher order multipole, in particular an octapole, but also a dodeca-pole or hexa-pole. It is further possible for the multipole device to be configured for a multi-beamlet apparatus. In the latter case, the substrate includes two or more apertures, and the first and second electrodes of the two independently operable multipoles are arranged alternately around each of the two or more apertures.

[0068] According to a further aspect described herein, there is provided a charged particle beam device 500 for inspecting and / or imaging a sample 10. Figure 5 shows a schematic diagram of a charged particle beam device 500 for inspecting a sample 10, for example using an electron beam.

[0069] The charged particle beam device 500 may be an electronic inspection device, for example a scanning electron microscope (SEM), configured to inspect and / or image a sample 10 disposed on a sample stage 560 .

[0070] The charged particle beam device 500 includes a charged particle beam source 505 for generating a charged particle beam 11 propagating along an optical axis A. The charged particle beam source 505 may be an electron source, for example a cold field emitter (CFE), a thermal field emitter (TFE), or another type of electron source.

[0071] The charged particle beam device 500 includes an objective lens 520 configured to focus the charged particle beam 11 onto the sample 10. The objective lens 520 can be a magnetic objective lens, an electrostatic objective lens, or a combined magnetic-electrostatic objective lens.

[0072] The sample 10, e.g. a wafer, an electronic circuit, or another substrate to be inspected, can be placed on a sample stage 560. The sample stage 560 can be movable in the plane of the sample, i.e. in the xy plane, and / or in the direction z of the optical axis A.

[0073] The charged particle beam device 500 may include a vacuum housing 501 in which the beam optical components of the charged particle beam device 500 are arranged. The vacuum housing 501 may be vacuumed to a pressure of less than 1 mbar, e.g., 10 -5 It can be evacuated to subatmospheric pressures of up to mbar.

[0074] The charged particle beam device 500 may include further beam optical components, such as a condenser lens 510 for collimating the charged particle beam 11, an aberration corrector for correcting beam aberrations, a beam separator 540 for separating signal particles (e.g., secondary electrons SE and / or backscattered electrons BSE) generated when the charged particle beam 11 collides with the sample 10 from the charged particle beam 11, and / or a detector 550 for detecting the signal particles.

[0075] The charged particle beam device 500 further includes a multipole device 100 (or 200) according to any of the embodiments described herein. The multipole device 100 can be arranged such that an optical axis A extends through at least one aperture 102 of the multipole device.

[0076] In some embodiments, which can be combined with other embodiments described herein, the multipole device 100 is arranged adjacent to or within the objective lens 520. Arranging the multipole device 100 near or within the objective lens 520 is advantageous because larger deflection angles are possible when the multipole device 100 is arranged near the sample 10. A charged particle beam device with a large field of view (FOV) can be provided. FIG. 5 shows the multipole device 100 at a position upstream of the objective lens, at a distance of 2 cm or less from the objective lens. Furthermore, an alternative position of the multipole device 100 within the objective lens 520 is shown in dashed lines in FIG. 5. In general, the distance along the optical axis A between the multipole device 100 and the objective lens 520 can be 5 cm or less, thereby providing an electron beam inspection device with a large FOV.

[0077] In some embodiments, which can be combined with other embodiments described herein, the multipole device 100 is configured to deflect a charged particle beam to a region of interest of a sample by applying a first dipole field to a first electrode of the first multipole 110. Additionally, the multipole device 100 is configured to scan the charged particle beam across the sample in the region of interest by applying a second dipole field to a second electrode of the second multipole 120 such that the first and second dipole fields are superimposed on one another.

[0078] The first dipole field is generally larger (e.g., 5 or more times larger or 10 or more times larger) than the second dipole field, and the second dipole field generally changes more quickly than the first dipole field, providing fast scanning movement of the charged particle beam 11 across the sample (e.g., having a change rate of 1 GHz or more).

[0079] The first multipole 110 can deflect the charged particle beam to different regions of interest on the sample and maintain a respective first dipole field for a predetermined period of time for each region of interest to be inspected. The second multipole 120 can rapidly scan the charged particle beam over each region of interest, for example in a raster scan pattern, so that each region of interest can be inspected in detail.

[0080] FIG. 6 is a flow diagram illustrating a method for influencing a charged particle beam according to embodiments described herein.

[0081] In box 610, the charged particle beam is directed through at least one aperture of a multipole device including a first multipole having four or more first electrodes and a second multipole having four or more second electrodes arranged in the same cross-sectional plane, the four or more first electrodes and the four or more second electrodes being arranged alternately around the at least one aperture.

[0082] In box 620, a first multipole is excited to provide a first field distribution for affecting the charged particle beam in a first manner. For example, the first field distribution can be a first dipole field and the first manner can be beam deflection of the charged particle beam to a predetermined region of interest of the sample. Alternatively, the first field distribution can be a quadrupole field and the first manner can be astigmatism correction or another aberration correction.

[0083] In box 630, a second multipole is excited to provide a second field distribution for affecting the charged particle beam in a second manner. For example, the second field distribution can be a second dipole field that can be rapidly changed to scan the charged particle beam across the sample in the region of interest.

[0084] The excitation of the first and second multipoles in boxes 620 and 630 can occur simultaneously, so that the charged particle beam is simultaneously affected in two different ways by one multipole device. Specifically, a "slow" beam deflection can be superimposed on a "fast" beam scanning by two independently controlled multipoles arranged in the same cross-sectional plane of the same substrate.

[0085] FIG. 7 is a flow diagram illustrating a method for influencing a charged particle beam according to embodiments described herein.

[0086] In box 710, the charged particle beam is directed through at least one aperture of a multipole device including a first multipole having four or more first electrodes and a second multipole having four or more second electrodes arranged in the same cross-sectional plane, the four or more first electrodes and the four or more second electrodes being arranged alternately around the at least one aperture.

[0087] In box 720, the charged particle beam is deflected to a first region of interest (ROI) of the sample by applying a first dipole field to a first multipole. The first dipole field is maintained during box 730, for example, for a period of one second or more.

[0088] In box 730, the charged particle beam is scanned across the first region of interest, e.g., in a raster scan pattern, by applying a rapidly varying scanning field to the second multipole. The first region of interest can be inspected, e.g., to locate defects in the specimen within the first region of interest.

[0089] In box 740, the charged particle beam is deflected to a second region of interest (ROI) of the sample by applying another dipole field to the first multipole. The other dipole field is maintained for a period of time, e.g., one second or more, during box 750.

[0090] In box 750, the charged particle beam is scanned across a second region of interest, e.g., in a raster scan pattern, by applying a rapidly varying scanning field to the second multipole. The second region of interest can be inspected, e.g., to locate defects in the specimen within the second region of interest.

[0091] The method can then continue by examining further regions of interest of the sample.

[0092] Specifically, the following embodiments are described herein: EMBODIMENT 1 1. A method of affecting a charged particle beam propagating along an optical axis, the method comprising: directing the charged particles through at least one aperture of a multipole device including a first multipole having four or more first electrodes and a second multipole having four or more second electrodes arranged in a same cross-sectional plane, the four or more first electrodes and the four or more second electrodes being arranged alternately around the at least one aperture; and at least one of: exciting the first multipole to provide a first field distribution for affecting the charged particle beam in a first manner and exciting the second multipole to provide a second field distribution for affecting the charged particle beam in a second manner. EMBODIMENT 2 2. The method of embodiment 1, wherein the first multipole is a first octopole including eight first electrodes and / or the second multipole is a second octopole including eight second electrodes. In particular, the first and second multipoles are octopoles. Alternatively, the first and second multipoles can be quadrupoles. Alternatively, the first and second multipoles can be 16-poles. EMBODIMENT 3 3. The method of embodiment 1 or 2, wherein affecting the charged particle beam in a first manner and affecting the charged particle beam in a second manner are selected from the group consisting of beam deflection, beam scanning, aberration correction, astigmatism correction, collimation, focusing, beam alignment, and blanking. In particular, affecting the charged particle beam in a first manner can include beam deflection and affecting the charged particle beam in a second manner can include beam scanning. Alternatively, beam deflection may be combined with aberration correction, such as astigmatism correction. EMBODIMENT 4 4. The method of any one of embodiments 1 to 3, wherein the first field distribution and the second field distribution are selected from the group consisting of a dipole field with selectable azimuthal angle, a quadrupole field with selectable azimuthal angle, and an octapole field. EMBODIMENT 5 5. The method according to any of the preceding embodiments, wherein the first and second multipoles are excited simultaneously to provide a first field distribution superimposed on a second field distribution. EMBODIMENT 6 6. The method according to any of the preceding embodiments, wherein at least one or both of the first and second field distributions are dipole fields. In particular, both the first and second field distributions may be dipole fields. EMBODIMENT 7 7. The method according to any of the preceding claims, wherein the first field distribution is a first dipole field and the second field distribution is a second dipole field, the first dipole field being stronger than the second dipole field. In particular, the ratio between the maximum field strength of the first dipole field and the maximum field strength of the second dipole field is equal to or greater than 5:1, in particular 10:1. EMBODIMENT 8 8. The method according to any of the preceding claims, wherein a voltage of V1*sin(θ1) is applied to the first electrodes of the first multipole, θ1 referring to the angular position of the respective first electrodes in the circumferential direction, and V1 being an adjustable deflection voltage. Alternatively or additionally, a voltage of V2*sin(θ2) is applied to the second electrodes of the second multipole, θ2 referring to the angular position of the respective second electrodes in the circumferential direction, and V2 being a varying scanning voltage of 20V or less. EMBODIMENT 9 9. The method according to any of the preceding claims, wherein the first field distribution is a dipole field that deflects the charged particle beam and the second field distribution is a dipole field that scans the charged particle beam across the sample. The beam deflection and scanning can be performed simultaneously by exciting both the first and second multipoles. EMBODIMENT 10 10. The method of embodiment 9, wherein a first field distribution is maintained for a predetermined time to deflect the charged particle beam onto a first region of interest on the sample, while a second field distribution is changed to scan the charged particle beam across the first region of interest. EMBODIMENT 11 11. The method of embodiment 10, further comprising altering the first field distribution to deflect the charged particle beam to a second region of interest on the sample, and subsequently maintaining the first field distribution for a predetermined time while the second field distribution is changed to scan the charged particle beam across the second region of interest. EMBODIMENT 12 12. The method according to any of the preceding claims, wherein the first electrode of the first multipole is connected to a first voltage source, in particular a low-speed high-voltage source, and the second electrode of the second multipole is connected to a second voltage source, in particular a high-speed low-voltage source. The methods according to the above-mentioned embodiments may be performed by any of the multipole devices and / or charged particle beam devices described herein. EMBODIMENT 13 1. A multipole device for influencing a charged particle beam propagating along an optical axis, comprising: a substrate having at least one aperture for the charged particle beam, the at least one aperture extending through the substrate along the optical axis; a first multipole including four or more first electrodes provided on the substrate; a second multipole including four or more second electrodes provided on the substrate, the four or more first electrodes and the four or more second electrodes being arranged in an alternating manner around the at least one aperture; a first power supply arrangement for connecting the first electrodes to a first voltage source; and a second power supply arrangement for connecting the second electrodes to a second voltage source. The multipole device may be configured to operate according to any of the methods described herein. EMBODIMENT 14 14. The multipole device of embodiment 13, wherein the first multipole is a first octapole comprising eight first electrodes and / or the second multipole is a second octapole comprising eight second electrodes. EMBODIMENT 15 15. A multipole device as described in embodiment 13 or 14, wherein the first and second multipoles are electrostatic multipoles, and the first and second electrodes are conductive parts provided on a substrate and configured to be set to a predetermined potential. EMBODIMENT 16 A multipole device according to any one of embodiments 13 to 15, wherein the first voltage source is a low-speed high-voltage source specifically configured for a maximum voltage of 100V or more and a rate of change of less than 1GHz, and the second voltage source is a high-speed low-voltage power source specifically configured for a maximum voltage of 50V or less and a rate of change of more than 1GHz. EMBODIMENT 17 A multipole device as described in any of embodiments 13 to 16, wherein the first power supply arrangement includes a high voltage connection between each of the first electrodes and a first voltage source, and the second power supply arrangement includes a high speed connection between each of the second electrodes and a second voltage source. EMBODIMENT 18 A multipole device according to any of embodiments 13 to 16, wherein the first multipole is configured to provide a first dipole field for beam deflection and the second multipole is configured to provide a second dipole field for scanning the charged particle beam across a sample, the second dipole field being superimposed on the first dipole field. EMBODIMENT 19 19. The multipole device according to any one of embodiments 13 to 18, wherein the first and second multipole are independently controllable multipoles. EMBODIMENT 20 A charged particle beam device for inspecting or imaging a sample with a charged particle beam, comprising: a charged particle beam source for generating a charged particle beam; an objective lens for focusing the charged particle beam on the sample; and a multipole device for influencing the charged particle beam according to any of the embodiments described herein. EMBODIMENT 21 21. The charged particle beam device of embodiment 20, wherein the multipole device is arranged adjacent to or within the objective lens. EMBODIMENT 22 22. The charged particle beam apparatus of embodiment 20 or 21, wherein the multipole device is configured to deflect the charged particle beam to a region of interest of the sample and to scan the charged particle beam across the region of interest.

[0093] While the forgoing is directed to exemplary embodiments, other and further embodiments may be devised without departing from the basic scope thereof, the scope of which is determined by the claims that follow.

Claims

1. 1. A method of affecting a charged particle beam propagating along an optical axis, comprising: directing the charged particles through at least one aperture of a multipole device including a first multipole with four or more first electrodes and a second multipole with four or more second electrodes arranged in the same cross-sectional plane, the four or more first electrodes and the four or more second electrodes being arranged alternately around the at least one aperture; exciting the first multipole to provide a first dipole field for influencing the charged particle beam in a first manner; and exciting the second multipole to provide a second dipole field for influencing the charged particle beam in a second manner. Including, the first multipole and the second multipole are excited simultaneously to provide the first dipole field superimposed on the second dipole field to synchronously affect the charged particle beam in the first and second manners.

2. 2. The method of claim 1, wherein the first multipole is a first octapole including eight first electrodes and the second multipole is a second octapole including eight second electrodes.

3. 2. The method of claim 1, wherein the influencing the charged particle beam in a first manner and the influencing the charged particle beam in a second manner are selected from the group consisting of beam deflection and beam scanning.

4. The method of any of claims 1 to 3, wherein the first dipole field and the second dipole field are dipole fields each having a selectable azimuthal angle.

5. A method according to any one of claims 1 to 3, wherein the first dipole field is stronger than the second dipole field, in particular, the ratio between the maximum field strength of the first dipole field and the maximum field strength of the second dipole field is, at least temporarily, 5:1 or greater.

6. a voltage of V1*sin(θ1) is applied to the first electrodes of the first multipole, θ1 being the angular position of the respective first electrodes in the circumferential direction, and V1 being an adjustable deflection voltage; 4. The method according to claim 1, wherein a voltage of V2*sin(θ2) is applied to the second electrodes of the second multipole, θ2 being the angular position of the respective second electrodes in the circumferential direction, and V2 being a varying scanning voltage of less than or equal to 20V.

7. 4. The method of claim 1, wherein the first dipole field is a dipole field that deflects the charged particle beam and the second dipole field is a dipole field that scans the charged particle beam across a sample.

8. 8. The method of claim 7, wherein the first dipole field is maintained for a predetermined time to deflect the charged particle beam into a first predetermined region of interest of the sample, while the second dipole field is changed to scan the charged particle beam over the first predetermined region of interest.

9. 10. The method of claim 8, further comprising varying the first dipole field to deflect the charged particle beam to a second region of interest on the sample, and subsequently maintaining the first field distribution for a predetermined time while the second dipole field is changed to scan the charged particle beam across the second region of interest.

10. 4. The method according to claim 1, wherein the first electrodes of the first multipole are connected to a first voltage source and the second electrodes of the second multipole are connected to a second voltage source different from the first voltage source, in particular a high speed source configured for a rate of change of more than 1 GHz.

11. 1. A multipole device for influencing a charged particle beam propagating along an optical axis, comprising: a substrate having at least one aperture for the charged particle beam, the at least one aperture extending through the substrate along the optical axis; a first multipole including four or more first electrodes provided on the substrate; a second multipole including four or more second electrodes provided on the substrate, the four or more first electrodes and the four or more second electrodes being arranged in an alternating manner around the at least one aperture; a first power arrangement for connecting the first electrode to a first voltage source; a second power supply arrangement for connecting the second electrode to a second voltage source; Including, A multipole device, wherein the first multipole is configured to provide a first dipole field and the second multipole is configured to provide a second dipole field superimposed on the first dipole field.

12. 12. The multipole device of claim 11, wherein the first multipole is a first octupole including eight first electrodes and the second multipole is a second octupole including eight second electrodes.

13. 12. The multipole device according to claim 11, wherein the first and second multipoles are electrostatic multipoles, and the first and second electrodes are conductive portions provided on the substrate and configured to be set to a predetermined potential.

14. 12. The multipole device of claim 11, wherein the first voltage source is a low speed, high voltage power supply specifically configured for a maximum voltage of 100 V or more and a rate of change of less than 1 GHz, and the second voltage source is a high speed, low voltage power supply specifically configured for a maximum voltage of 50 V or less and a rate of change of more than 1 GHz.

15. The multipole device according to any one of claims 11 to 14, wherein the first dipole field is configured for beam deflection and the second dipole field is configured for scanning the charged particle beam across a sample.

16. The multipole device according to any one of claims 11 to 14, wherein the first and second multipole are independently controllable multipoles.

17. 1. A charged particle beam device for inspecting or imaging a sample using a charged particle beam, comprising: a charged particle beam source for generating said charged particle beam; an objective lens for focusing the charged particle beam onto the sample; The multipole device for influencing the charged particle beam according to any one of claims 11 to 14, 13. A charged particle beam device comprising:

18. Charged particle beam device according to claim 17, wherein the multipole device is arranged adjacent to or within the objective lens.

19. 18. The charged particle beam device of claim 17, wherein the multipole device is configured to deflect the charged particle beam to a region of interest of the sample and to scan the charged particle beam across the region of interest.

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