Film deposition apparatus, film deposition method, and method for manufacturing electronic devices

Abstract

To provide a film deposition apparatus capable of suppressing an adverse effect caused by a simultaneous preparation operation for a film deposition in two regions.SOLUTION: A film deposition apparatus 1 alternatively and repeatedly performs the steps of: performing a preparation operation for performing a film deposition operation for a substrate transported to a second region B while a film deposition operation is performed by a vapor deposition source 110 in a first region A; and performing the preparation operation to the substrate transported to the first region A while the film deposition operation is performed in the second region B. In a case where a substrate transportation to either the first region A or the second region B is delayed, the preparation operation that is performed in a normal case in the first region A and the second region B is not performed simultaneously.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] Conventionally, a technique is known in which film formation is performed alternately in two regions in a film formation apparatus. In such a technique, while a film formation operation is performed in one region, a preparatory operation such as alignment for aligning a substrate and a mask is performed in the other region. This can increase production efficiency. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-26931 A Summary of the Invention [Problem to be solved by the invention]

[0004] In the conventional technology described above, if the delivery of the substrate to one of the areas is delayed due to some kind of trouble, the time until the preparation operation in that area is completed becomes longer. Therefore, while the preparation operation in the area is in progress, the preparation operation in the other area starts. This results in the preparation operation being performed simultaneously in two areas. In this case, for example, there is a risk of adverse effects such as a temporary concentration of the power load due to the concentration of operations.

[0005] An object of the present invention is to provide a film formation apparatus capable of suppressing adverse effects caused by preparatory operations for film formation being performed simultaneously in two regions. [Means for solving the problem]

[0006] The present invention relates to a deposition chamber having a first region and a second region for forming a thin film on a substrate; A film forming source for forming a thin film on the substrate; Equipped with A film forming apparatus in which a step of performing a preparatory operation for a film forming operation on the substrate carried into the second region while a film forming operation by the film forming source is being performed in the first region, and a step of performing the preparatory operation on the substrate carried into the first region while the film forming operation is being performed in the second region are alternately repeated, When the delivery of the substrate to the first area or the second area is delayed, the preparatory operations that are normally performed are not performed simultaneously in the first area and the second area. Effect of the Invention

[0007] As described above, according to the present invention, it is possible to suppress adverse effects caused by the preparatory operations for film formation being performed simultaneously in two regions. [Brief description of the drawings]

[0008] [Figure 1] 1 is a schematic diagram of an electronic device manufacturing apparatus including a film forming apparatus according to an embodiment. [Diagram 2] FIG. 2 is a perspective view showing an internal configuration of a film forming apparatus according to an embodiment. [Diagram 3] FIG. 2 is a schematic diagram showing an internal configuration of a film forming apparatus according to an embodiment. [Figure 4] FIG. 4 is a schematic diagram showing a film formation source moving mechanism according to the embodiment. [Diagram 5] 11A and 11B are schematic diagrams of a moving mechanism for a film formation source according to an embodiment and a modified example. [Figure 6] FIG. 4 is a diagram illustrating the relationship between elapsed time and various operations. [Figure 7] FIG. 4 is a diagram illustrating the relationship between elapsed time and various operations. [Figure 8] FIG. 1 is an explanatory diagram of an organic EL display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Preferred embodiments of the present invention will be described below with reference to the drawings. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. Furthermore, the hardware and software configurations, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the device in the following description are not intended to limit the scope of the present invention to those alone, unless otherwise specified.

[0010] The present invention can be preferably applied to an apparatus for forming a thin film (material layer) of a desired pattern on the surface of a substrate by vacuum deposition. Any material such as glass, a polymeric film, or metal may be selected as the substrate material, and any material such as an organic material or a metallic material (metal, metal oxide, etc.) may be selected as the deposition material. Specifically, the technology of the present invention can be applied to an apparatus for manufacturing an organic electronic device (e.g., an organic EL display device, a thin-film solar cell), an optical member, etc. Among them, an apparatus for manufacturing an organic EL display device is one of the preferred application examples of the present invention, since an organic EL display element is formed by evaporating a deposition material and depositing it on a substrate through a mask.

[0011] (Example) A film forming apparatus according to an embodiment of the present invention will be described with reference to Figs. 1 to 7. Fig. 1 is a schematic diagram of an electronic device manufacturing apparatus including a film forming apparatus according to an embodiment of the present invention, and is a diagram showing various devices constituting the manufacturing apparatus in a schematic plan view. Fig. 2 is a perspective view showing an internal configuration of a film forming apparatus according to an embodiment of the present invention. Fig. 3 is a schematic diagram of an internal configuration of a film forming apparatus according to an embodiment of the present invention, and is a diagram showing the internal configuration of the film forming apparatus from the front. Fig. 4 is a schematic diagram showing a moving mechanism of a film forming source according to an embodiment of the present invention, and is a diagram showing the moving mechanism in a schematic plan view. Fig. 5 is a schematic diagram of a moving mechanism of a film forming source according to an embodiment and a modified example of the present invention, and is a diagram showing a moving direction of the film forming source. Figs. 6 and 7 are diagrams for explaining the relationship between elapsed time and various operations.

[0012] <Electronic device manufacturing equipment> The electronic device manufacturing apparatus according to the present embodiment includes a plurality of cluster apparatuses and a relay apparatus connecting adjacent cluster apparatuses. As shown in Fig. 1, the cluster apparatus includes a plurality of film forming apparatuses 1 for forming thin films on substrates P, a plurality of mask stock apparatuses 2 for storing masks before and after use, and a transfer chamber 3 disposed in the center thereof. A transfer robot (not shown) is installed in the transfer chamber 3 for transferring substrates P to the plurality of film forming apparatuses 1 and transferring masks M to the film forming apparatuses 1 and the mask stock apparatus 2. The transfer robot is, for example, a robot having a structure in which a robot hand for holding the substrate P or the mask M is attached to an articulated arm.

[0013] In the film forming apparatus 1, an evaporation material stored in an evaporation source 110 serving as a film forming source is evaporated or sublimated by being heated by a heater, and is deposited on a substrate via a mask M. A series of film forming processes, such as delivery of the substrate P to a transfer robot, adjustment (alignment) of the relative positions of the substrate P and the mask M, fixing the substrate P on the mask M, and film formation (deposition), are performed by the film forming apparatus 1.

[0014] In the mask stock device 2, new masks to be used in the film formation process in the film formation device 1 and used masks are stored in two separate cassettes. The transfer robot transfers the used mask from the film formation device 1 to a cassette in the mask stock device 2, and transfers the new mask stored in the other cassette in the mask stock device 2 to the film formation device 1.

[0015] The cluster device is connected to a pass chamber 4 for transporting the substrate P from the upstream side in the flow direction of the substrate P to the cluster device itself, and a buffer chamber 5 for transporting the substrate P for which the film formation process has been completed in the cluster device to another cluster device on the downstream side. The transport robot in the transport chamber 3 receives the substrate P from the upstream pass chamber 4 and transports it to one of the film formation devices 1 in the cluster device. The transport robot also receives the substrate P for which the film formation process has been completed in the cluster device from one of the film formation devices 1 and transports it to the buffer chamber 5 connected to the downstream side. The buffer chamber 5 is preferably configured to be capable of temporarily storing multiple substrates P when there is a difference in processing speed between the cluster device on the upstream side and the cluster device on the downstream side, or when the substrate P cannot be transported normally due to a problem on the downstream side.

[0016] A swirl chamber 6 that changes the orientation of the substrate P is provided between the buffer chamber 5 and the pass chamber 4. A transfer robot (not shown) is provided in the swirl chamber 6 for receiving the substrate P from the buffer chamber 5, rotating the substrate P by 180°, and transferring it to the pass chamber 4. This ensures that the orientation of the substrate P is the same in the upstream cluster device and the downstream cluster device, facilitating substrate processing.

[0017] The pass chamber 4, the buffer chamber 5, and the swirl chamber 6 are so-called relay devices that connect the cluster devices. The relay device installed on the upstream side and / or downstream side of the cluster device includes at least one of the pass chamber, the buffer chamber, and the swirl chamber.

[0018] The film forming apparatus 1, the mask stock apparatus 2, the transfer chamber 3, the buffer chamber 5, the swirl chamber 6, etc. are maintained in a high vacuum state during the manufacturing process of the organic EL display panel. The pass chamber 4 is usually maintained in a low vacuum state, but may be maintained in a high vacuum state as necessary.

[0019] In this embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to Fig. 1, but the present invention is not limited thereto, and other types of apparatuses and chambers may be included, and the arrangement between these apparatuses and chambers may be changed. For example, in a relay apparatus connected to a cluster apparatus of a part of the electronic device manufacturing apparatus, a buffer chamber may not be provided, and pass chambers may be provided on the upstream side and downstream side of the swirl chamber. Also, a substrate rotation device that changes the orientation of a substrate may be provided in the pass chamber without providing a swirl chamber, and if there is no need to change the orientation of the substrate, a substrate rotation device may not be provided.

[0020] The film forming apparatus 1 also includes a control unit. The control unit has a function of performing various controls, such as transport of the substrate P, alignment of the substrate P, alignment of the mask M, control of the evaporation source, and control of film formation. The control unit can be configured, for example, by a computer having a processor, memory, storage, I / O, and the like. In this case, the function of the control unit is realized by the processor executing a program stored in the memory or storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control unit may be configured by a circuit such as an ASIC or FPGA. Also, a control unit may be installed for each film forming apparatus, or one control unit may be configured to control multiple film forming apparatuses. The film forming apparatus 1 will be described in more detail below.

[0021] <Film forming equipment> As shown in Fig. 2 and Fig. 3, the film formation apparatus 1 includes a film formation chamber 10 having a vacuum atmosphere therein, a film formation source unit 100 provided in the film formation chamber 10, and a first moving mechanism 300 and a second moving mechanism 400 for moving the film formation source unit 100. The chamber 10 is an airtight container, and the inside thereof is maintained in a vacuum state (or reduced pressure state) by an exhaust pump (not shown). The first moving mechanism 300 is provided to move the film formation source unit 100 in a first direction (left and right direction in FIG. 3). More specifically, the film formation source unit 100 is configured to move linearly back and forth in the first direction by the first moving mechanism 300. The second moving mechanism 400 is provided to move the film formation source unit 100 in a second direction (front and back direction of the paper in FIG. 3) intersecting the first direction. More specifically, the film formation source unit 100 is configured to move linearly back and forth in the second direction by the second moving mechanism 400. The second moving mechanism 400 is configured to be movable in the first direction by the first moving mechanism 300. In this embodiment, the first direction and the second direction are perpendicular to each other.

[0022] The film forming source unit 100 includes an evaporation source 110 as a film forming source. The evaporation source 110 can employ various known technologies that can be employed in a so-called vacuum deposition apparatus, so detailed description thereof will be omitted. The film forming apparatus 1 is also provided with an opening / closing shutter (not shown) that blocks or passes the deposition material evaporated from the evaporation source 110, and a film thickness monitor (not shown) that monitors the evaporation rate of the deposition material discharged from the evaporation source 110. In addition, a member that supports the substrate P and the mask M, and an alignment device that moves at least one of the member that supports the substrate P and the member that supports the mask M to align the substrate P and the mask M are also provided. As these can also employ known technologies as appropriate, description thereof will be omitted. In this embodiment, the film forming apparatus is a so-called vacuum deposition apparatus, and the film forming source is an evaporation source. However, the film forming apparatus of the present invention can also be applied to, for example, a sputtering apparatus. In this case, the film forming source is composed of a target or the like.

[0023] <Movement mechanism> With particular reference to FIG. 4, the movement mechanism of the film formation source unit 100 including the evaporation source 110 will be described. The film formation source unit 100 is fixed to the second movement mechanism 400. The film formation source unit 100 is provided with an atmospheric box. The inside of the atmospheric box is configured to communicate with the outside of the film formation chamber 10 through the insides of the first atmospheric arm 210 and the second atmospheric arm 220. With this configuration, it is possible to connect electrical wiring and cooling pipes to the film formation source unit 100. Note that the first atmospheric arm 210 and the second atmospheric arm 220 are configured to move following the movement of the film formation source unit 100. More specifically, the first atmospheric arm 210 is configured such that one end thereof is rotatable relative to the bottom plate of the film formation chamber 10. And the second atmospheric arm 220 is rotatably supported at one end thereof relative to the other end of the first atmospheric arm 210, and rotatably supported at the other end thereof relative to the atmospheric box provided in the film formation source unit 100.

[0024] The film forming apparatus 1 according to this embodiment is configured to be able to perform film formation in each of the regions on the A side (referred to as the first region A) and the B side (referred to as the second region B) in Figs. 2 and 4. When performing film formation in the first region A, the film formation source unit 100 is moved to the first region A by the first moving mechanism 300, and the film formation source unit 100 is operated while moving the film formation source unit 100 by the second moving mechanism 400, so that a film can be formed on the substrate P arranged in the first region A through the mask M. When performing film formation in the second region B, the film formation source unit 100 is moved to the second region B by the first moving mechanism 300, and the film formation source unit 100 is operated while moving the film formation source unit 100 by the second moving mechanism 400, so that a film can be formed on the substrate P arranged in the second region B through the mask M.

[0025] The first moving mechanism 300 and the second moving mechanism 400 have the same basic configuration and operation mechanism. These moving mechanisms are equipped with a device called a linear motion guide device, etc. The guide rail extends along the guide rail, and a movable body moves along the guide rail.

[0026] The first movement mechanism 300 includes a pair of first guide rails 310 arranged parallel to each other. On each pair of first guide rails 310, two first moving bodies (not shown) are provided to move along each of the first guide rails 310. The pair of second guide rails 410 constituting the second movement mechanism 400 are fixed to a plurality of first moving bodies. Specifically, one end side of one of the second guide rails 410 is fixed to a first moving body provided on one of the pair of first guide rails 310, and the other end side is fixed to a first moving body provided on the other of the pair of first guide rails 310. The same is true for the other second guide rail 410. The pair of second guide rails 410 are connected by a pair of connecting members 330. At least one of the pair of connecting members 330 is provided with a gear 340 that rotates by a driving source (such as a motor) not shown. The gear 340 is configured to mesh with a rack formed on the side surface of the first guide rail 310. With the above-described configuration, by rotating the gear 340 using a drive source, it is possible to move the entire second moving mechanism 400 together with the multiple first moving bodies linearly back and forth in the first direction.

[0027] The second moving mechanism 400 includes a pair of second guide rails 410 arranged parallel to each other. On each pair of second guide rails 410, two second moving bodies (not shown) are provided, which move along the second guide rails 410. The film formation source unit 100 is fixed on the second moving bodies. The film formation source unit 100 includes a rotating shaft 441 and gears 442 provided on both ends of the rotating shaft 441. These gears 442 are configured to mesh with racks formed on the upper surface of the second guide rail 410. With the above configuration, the film formation source unit 100 can be moved linearly back and forth in the second direction together with the second moving bodies by rotating the gear 442 together with the rotating shaft 441 by a driving source (not shown).

[0028] As described above, the film forming source unit 100 is directly fixed to the second moving body and indirectly fixed to the first moving body. In the above-mentioned first moving mechanism 300 and second moving mechanism 400, a so-called rack and pinion mechanism is used as a mechanism for moving the moving body. However, in these moving mechanisms, the mechanism for moving the moving body is not limited to the rack and pinion mechanism, and various known techniques such as a ball screw mechanism may be used.

[0029] <Modification of the movement mechanism> FIG. 5(a) shows a schematic plan view of the movement range of the evaporation source 110 provided in the film forming source unit 100 relative to the first region A and the second region B in the above-mentioned movement mechanism. In the film forming apparatus 1 according to this embodiment, the film forming operation is performed while the evaporation source 110 moves relative to the substrate P in a stationary state. When the above-mentioned movement mechanism is adopted, the direction S in which the evaporation source 110 moves between the first region A and the second region B and the directions TA and TB in which the evaporation source 110 moves during the film forming operation are configured to intersect. More specifically, the direction S is perpendicular to the directions TA and TB. The direction TA is the movement direction of the evaporation source 110 when the film forming operation is performed in the first region A, and the direction TB is the movement direction of the evaporation source 110 when the film forming operation is performed in the second region B. The directions TA and TB are parallel to each other.

[0030] In the present invention, the moving mechanism is not limited to the above. Another example is shown in FIG. 5(b). In this illustrated example, the direction S in which the evaporation source 110 moves between the first region A and the second region B is parallel to the directions TA and TB in which the evaporation source 110 moves during the film formation operation. When such a configuration is adopted, a single moving mechanism can be used to perform the film formation operation in the first region A and the film formation operation in the second region B by the evaporation source 110. That is, the guide rails and the moving body for moving the evaporation source 110 between the first region A and the second region B can be shared, and the guide rails and the moving body for moving the evaporation source 110 during film formation in the first region A and the second region B can be shared. In addition, the driving source for moving the moving body can also be shared. Therefore, there is an advantage in that the moving mechanism can be simplified.

[0031] <Film formation> A film forming operation by the film forming apparatus 1 configured as above will be described. In the film forming apparatus 1 according to this embodiment, a preparatory operation is performed for a film forming operation on a substrate P carried into the second area B while a film forming operation is performed by the evaporation source 110 in the first area A. Also, a preparatory operation is performed for a substrate P carried into the first area A while a film forming operation is performed in the second area B. In the film forming apparatus 1, these steps are repeated alternately. Note that the preparatory operation means an operation required before a film forming operation on a substrate P is started, and includes, for example, an operation of carrying out a substrate P on which a film has been formed and an operation of aligning the carried-in substrate P with a mask M by an alignment device (not shown).

[0032] 6 and 7 show various operations in the first region A and various operations in the second region B with respect to elapsed time. FIG. 6(a) shows various operations when normal operation is continuously performed. In the figure, T1 is a period during which a film formation operation is performed, T2 is a period during which the evaporation source 110 moves between the first region A and the second region B, and T3 is a period during which a preparation operation is performed. If the operation is performed normally, during the period T1 during which the film formation operation is performed in the first region A, a preparation operation is simultaneously performed in the second region B (see period T3). Then, after these operations are completed, the evaporation source 110 moves to the second region B, and during the period T1 during which the film formation operation is performed in the second region B, a preparation operation is simultaneously performed in the first region A (see period T3). Then, the evaporation source 110 moves to the first region A. Such operations are repeated. Therefore, since a film formation operation is performed in one region during a period during which a preparation operation for a film formation operation is performed in the other region, productivity can be improved.

[0033] However, if the substrate delivery to any of the regions is delayed due to some trouble, the time until the preparation operation in that region is completed will be longer. FIG. 6(b) shows an example of this. In the figure, T4 is the period during which the substrate delivery is delayed. As shown in the figure, if the substrate delivery is delayed in the second region B, the start and end of the preparation period T3 in the second region B will be delayed. As a result, even if the film formation operation is completed in the first region A and the preparation operation for a new substrate P is completed thereafter, the film formation operation in the second region B is not completed. Therefore, in the first region A, the film formation operation cannot be started until the film formation operation in the second region B is completed and the evaporation source 110 moves to the first region A. Therefore, in the first region A, a waiting period is required after the preparation operation is completed. In the figure, T5 is the waiting period. After that, unless a trouble such as the substrate delivery recurs, the same operation as the normal operation described above is performed.

[0034] When the substrate loading is delayed and the above operation is performed, as is clear from FIG. 6(b), a period occurs in which the preparatory operations are performed simultaneously in the first area A and the second area B (see period T3A in the figure). When the preparatory operations are performed simultaneously in the first area A and the second area B in this manner, for example, adverse effects such as a temporary concentration of power load due to concentration of operations may occur. In addition, for example, when the alignment device is aligning the substrate P and the mask M in the preparatory operation in the first area A during period T3A, vibrations generated by the preparatory operation in the second area B may be transmitted to the first area A. As a result, the alignment of the substrate P and the mask M in the preparatory operation in the first area A may be adversely affected by the vibrations. Therefore, in the film forming apparatus 1 according to this embodiment, when the substrate loading to the first area A or the second area B is delayed, the preparatory operations that are normally performed are performed simultaneously in the first area A and the second area B. It is configured not to do this at all times.

[0035] In the film forming apparatus 1, as described above, the transport of the substrate P, the alignment of the substrate P with the mask M, and the operation of the evaporation source 110 are controlled by the control unit. Therefore, in the film forming apparatus 1 according to this embodiment, when the substrate loading into the first area A or the second area B is delayed, the control unit can also be said to control the first area A and the second area B so that the preparatory operations that are normally performed are not performed simultaneously.

[0036] Here, various known techniques can be adopted as a method for detecting a delay in substrate loading. For example, a sensor for detecting the substrate P can be provided at a position in the film formation chamber 10 where the substrate P is loaded, or a sensor for detecting the substrate P can be provided on a member supporting the substrate P, and a delay in substrate loading can be detected based on information from these sensors. Also, a delay in substrate loading can be detected by detecting the operation of a transfer robot (not shown) provided in the transfer chamber 3 described above.

[0037] Below, we will explain several operating procedures to prevent preparatory operations that are normally performed in the first area A and the second area B from being performed simultaneously in the case where the delivery of substrates to the first area A or the second area B is delayed.

[0038] <<Operation procedure example 1>> In the operation procedure example 1, when the substrate loading into the first area A or the second area B is delayed, a configuration is adopted in which the preparatory operation is not performed in the other area at least while the preparatory operation is being performed in the first area A or the second area B. An example of this is shown in FIG.

[0039] 6(c), if a delay occurs in carrying in the substrate in the second region B (see period T4), the start and end of the preparation period T3 in the second region B will be delayed. Therefore, even if the film formation operation is completed and the evaporation source 110 moves to the second region B, the first region A is configured to wait (see waiting period T5) until the preparation operation in the second region B is completed, and not to start the preparation operation.

[0040] By adopting such a configuration, when the substrate loading into the first area A or the second area B is delayed, the preparatory operations that are normally performed can be prevented from being performed simultaneously in the first area A and the second area B. In the case of this procedure example 1, the preparatory operations are not performed simultaneously in the first area A and the second area B. Therefore, it is possible to suppress adverse effects caused by the preparatory operations for film formation being performed simultaneously in the first area A and the second area B.

[0041] After the preparation period T3 ends in the second region B, a film formation operation is performed in the second region B, and a preparation operation is simultaneously performed in the first region A. After that, unless a trouble such as substrate loading reoccurs, an operation similar to the normal operation described above is performed.

[0042] <<Operation procedure example 2>> In the operation procedure example 2, when the substrate loading into the first area A or the second area B is delayed, a configuration is adopted in which the preparatory operation is performed at a slower speed than normal in the other area while the preparatory operation is being performed at least in the first area A or the second area B. An example of this is shown in Fig. 7(b). Note that, in order to make it easier to compare with the case where normal operation is continuously performed, Fig. 7(a) shows various operations when normal operation is continuously performed.

[0043] As shown in FIG. 7(b), when a delay occurs in carrying in the substrate in the second area B (see period T4), the start and end of the preparation period T3 in the second area B are delayed. In the region A, in the preparatory operation performed after the film formation operation is completed and the evaporation source 110 moves to the second region B, the preparatory operation is performed at a slower speed than normal (see preparatory operation period T3X with slower speed). In the example shown in FIG. 7(b), even if the preparatory operation is performed at a slower speed in the first region A, the film formation operation in the second region B has not been completed at the end of the preparatory operation, so a waiting period T5 is provided. However, depending on the delay period T4 and the way in which the speed of the preparatory operation is slowed down, there are cases in which the waiting period T5 is not provided.

[0044] By adopting such a configuration, when the substrate loading into the first area A or the second area B is delayed, the preparatory operations that are normally performed in the first area A and the second area B can be prevented from being performed simultaneously. In the case of this procedure example 2, although there is a period in which the preparatory operations are performed simultaneously in the first area A and the second area B, the preparatory operations in the areas other than the area where the substrate loading is delayed are performed at a slower speed than normal. Therefore, it is possible to suppress adverse effects caused by the preparatory operations for film formation being performed simultaneously in the first area A and the second area B. It is possible to reduce the required power by slowing down the speed of the preparatory operations (for example, by slowing down the unloading speed of the substrate P on which the film has been formed, or by slowing down the operation speed when aligning the substrate P and the mask M).

[0045] After the film formation operation is completed in the second region B, the same operation as the normal operation described above is performed unless a trouble such as the substrate loading occurs again.

[0046] <<Operation procedure example 3>> In the operation procedure example 3, when the substrate loading into the first area A or the second area B is delayed, while the preparatory operation is being performed in the first area A or the second area B, the preparatory operation is performed at a slower speed than normal in the other area. An example of this is shown in Fig. 7(c).

[0047] As shown in FIG. 7(c), when a delay occurs in carrying in the substrate in the second region B (see period T4), the start and end of the preparation period T3 in the second region B are delayed. Therefore, in the preparation operation performed in the first region A after the film formation operation is completed and the evaporation source 110 moves to the second region B, the preparation operation is performed at a slower speed than normal until the preparation operation in the second region B is completed (see preparation operation period T3X with slower speed). In the case of this procedure example 3, unlike procedure example 2, after the preparation operation in the second region B is completed, the preparation operation is performed in the first region A at the same speed as in normal times. Note that, in the example shown in FIG. 7(c), unlike the example shown in procedure example 2, the waiting period T5 is not provided in the first region A, but depending on the delay period T4 and the preparation operation period T3X, the waiting period T5 may be provided.

[0048] By adopting such a configuration, when the substrate loading into the first region A or the second region B is delayed, the preparatory operations that are normally performed can be prevented from being performed simultaneously in the first region A and the second region B. In the case of this procedure example 3, although there is a period in which the preparatory operations are performed simultaneously in the first region A and the second region B, the preparatory operations in the regions other than the region where the substrate loading is delayed are performed at a slower speed than normal. Therefore, it is possible to suppress adverse effects caused by the preparatory operations for film formation being performed simultaneously in the first region A and the second region B.

[0049] After the preparatory operation is completed in the second area B, the same operation as the normal operation described above is performed unless a trouble such as substrate loading occurs again.

[0050] <<Operation procedure example 4>> In the operation procedure example 4, when the substrate loading into the first area A or the second area B is delayed, the moving speed of the evaporation source 110 in the other area is slower than normal while the preparation operation is being performed in at least the first area A or the second area B. An example of this is shown in FIG.

[0051] As shown in FIG. 7(d), when a delay occurs in the substrate loading in the second region B (see period T4), the start and end of the preparation period T3 in the second region B are delayed. Therefore, in the first region A, the film formation operation is performed by slowing down the movement speed of the evaporation source 110 compared to normal times at least while the preparation operation is being performed in the second region B (see the film formation operation period T1X with the speed reduced). In the case of this procedure example 4, the movement speed of the evaporation source 110 in the first region A is slowed down, including the delay period T4 in the second region B, but the movement speed may be slowed down when the preparation operation in the second region B is started. When the movement speed of the evaporation source 110 is slowed down, it may be considered to control the evaporation rate of the evaporation source 110 so as to obtain a desired film thickness.

[0052] By adopting such a configuration, when the substrate loading into the first region A or the second region B is delayed, the preparatory operations that are normally performed can be prevented from being performed simultaneously in the first region A and the second region B. In the case of this procedure example 4, the preparatory period T3 in the first region A starts after the preparatory period T3 in the second region B ends. Therefore, similar to procedure example 1, the preparatory operations are not performed simultaneously in the first region A and the second region B. Therefore, it is possible to suppress adverse effects caused by the preparatory operations for film formation being performed simultaneously in the first region A and the second region B.

[0053] After the preparation period T3 in the second region B is completed, a film forming operation is performed in the second region B, and a preparation operation is simultaneously performed in the first region A. Thereafter, unless a trouble such as substrate loading reoccurs, the same operation as the normal operation described above is performed. The above-described operation procedure examples 1 to 4 can be appropriately selected and adopted according to the usage environment, etc.

[0054] (Electronic device manufacturing method) An example of an apparatus and method for manufacturing an electronic device using the film forming apparatus according to the above embodiment will be described below. As an example of an electronic device, the configuration and manufacturing method of an organic EL display device will be illustrated below. First, the organic EL display device to be manufactured will be described. Fig. 8(a) shows an overall view of an organic EL display device 50, and Fig. 8(b) shows a cross-sectional structure of one pixel.

[0055] As shown in FIG. 8(a), a plurality of pixels 52 each including a plurality of light-emitting elements are arranged in a matrix in a display area 51 of an organic EL display device 50. Although details will be described later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display area 51. In the case of the organic EL display device according to this embodiment, the pixel 52 is configured by a combination of a first light-emitting element 52R, a second light-emitting element 52G, and a third light-emitting element 52B that emit light different from each other. The pixel 52 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0056] Fig. 8(b) is a partial cross-sectional schematic diagram taken along line AB in Fig. 8(a). The pixel 52 has an organic EL element provided on a substrate 53, the organic EL element comprising a first electrode (anode) 54, a hole transport layer 55, light-emitting layers 56R, 56G, 56B, an electron transport layer 57, and a second electrode (cathode) 58. Of these, the hole transport layer 55, the light-emitting layers 56R, 56G, 56B, and the electron transport layer 57 correspond to organic layers. In this embodiment, the light-emitting layer 56R is an organic EL layer that emits red light, the light-emitting layer 56G is an organic EL layer that emits green light, and the light-emitting layer 56B is an organic EL layer that emits blue light. Light-emitting layers 56R, 56G, and 56B are formed in a pattern corresponding to the light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue, respectively. The first electrode 54 is formed separately for each light-emitting element. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common with the plurality of light-emitting elements 52R, 52G, and 52B, or may be formed for each light-emitting element. In order to prevent the first electrode 54 and the second electrode 58 from being shorted by foreign matter, an insulating layer 59 is provided between the first electrodes 54. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 60 is provided to protect the organic EL element from moisture and oxygen.

[0057] 8(b), the hole transport layer 55 and the electron transport layer 57 are shown as a single layer, but may be formed of multiple layers including a hole blocking layer and an electron blocking layer depending on the structure of the organic EL display element. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 54 to the hole transport layer 55 can be formed between the first electrode 54 and the hole transport layer 55. Similarly, an electron injection layer can be formed between the second electrode 58 and the electron transport layer 57.

[0058] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0059] First, a substrate 53 on which a circuit (not shown) for driving the organic EL display device and a first electrode 54 are formed is prepared.

[0060] An acrylic resin is formed by spin coating on the substrate 53 on which the first electrode 54 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 54 is formed, thereby forming an insulating layer 59. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0061] The substrate 53 on which the insulating layer 59 has been patterned is carried into a film forming apparatus, and the substrate is supported by a substrate supporting means, and a hole transport layer 55 is formed as a common layer on the first electrodes 54 in the display area. The hole transport layer 55 is formed by vacuum deposition. In practice, the hole transport layer 55 is formed to be larger than the display area 51, so that a high-definition mask is not required.

[0062] Next, the substrate 53 on which the hole transport layer 55 has been formed is carried into another film forming apparatus and supported by a substrate support means. The substrate and the mask are aligned, the substrate is placed on the mask, and a red light emitting layer 56R is formed on the portion of the substrate 53 where the red light emitting element is to be disposed. In the same manner as the formation of the light emitting layer 56R, a green light emitting layer 56G is formed by another film forming apparatus, and a blue light emitting layer 56B is formed by another film forming apparatus. After the formation of the light emitting layers 56R, 56G, and 56B is completed, an electron transport layer 57 is formed on the entire display area 51 by yet another film forming apparatus. The electron transport layer 57 is formed as a layer common to the three light emitting layers 56R, 56G, and 56B.

[0063] The substrate on which the electron transport layer 57 has been formed is transferred to a sputtering device, where the second electrode 58 is formed, and then transferred to a plasma CVD device where the protective layer 60 is formed, thereby completing the organic EL display device 50.

[0064] If the substrate 53 on which the insulating layer 59 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the formation of the protective layer 60 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this example, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere. [Explanation of symbols]

[0065] 1: Film forming device 2: Mask stock device 3: Transfer chamber 4: Pass chamber 5: Buffer chamber 6: Swirling chamber 10: Film formation chamber 100: Film formation source unit 110: Evaporation source 210: First atmospheric arm 220: Second atmospheric arm 300: First moving mechanism 310: First guide rail 330: Connection member 340: Gear 400: Second moving mechanism 410: Second guide rail 441: Rotating shaft 442: Gear A: First region B: Second region M: Mask P: Substrate

Claims

1. A film deposition chamber having a first region and a second region for forming a thin film on a substrate, A film deposition source for forming a thin film on the aforementioned substrate, Equipped with, A film deposition apparatus in which a process is alternately repeated in which a preparatory operation for film deposition is performed on the substrate that is brought into the second region while a film deposition operation is performed in the first region by the film deposition source, and a preparatory operation is performed on the substrate that is brought into the first region while the film deposition operation is performed in the second region, A film deposition apparatus characterized in that, if the loading of a substrate into the first or second region is delayed, the preparation operations that are normally performed are not performed simultaneously in the first and second regions.

2. The film deposition apparatus according to claim 1, characterized in that, if the loading of a substrate into the first or second region is delayed, the preparation operation is not performed in the other region while the preparation operation is being performed in at least that region.

3. The film deposition apparatus according to claim 1, characterized in that, if the loading of the substrate into the first or second region is delayed, the preparation operation is performed in the other region at a reduced speed compared to normal conditions while the preparation operation is being performed in at least that region.

4. The film deposition operation is performed while the film deposition source moves relative to the stationary substrate, If the delivery of the substrate to the first or second region is delayed, at least the said region The film deposition apparatus according to claim 1, characterized in that while the preparation operation is being performed in one region, the film deposition operation is performed in the other region with the movement speed of the film deposition source reduced compared to normal conditions.

5. The film deposition operation is performed while the film deposition source moves relative to the stationary substrate, The film deposition apparatus according to claim 1, characterized in that the direction in which the film deposition source moves between the first region and the second region and the direction in which the film deposition source moves during the film deposition operation intersect.

6. The film deposition operation is performed while the film deposition source moves relative to the stationary substrate, The film deposition apparatus according to claim 1, characterized in that the direction in which the film deposition source moves between the first region and the second region is parallel to the direction in which the film deposition source moves during the film deposition operation.

7. A step in which the preparatory operation described in Claim 1 is performed, A film deposition step in which a thin film is formed on the substrate using a film deposition source, A film formation method characterized by including the following:

8. A method for manufacturing an electronic device, characterized by manufacturing an electronic device using the film formation method described in Claim 7.

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