Integrated circuit device and method of manufacturing the same

Abstract

To provide an integrated circuit device and a method of manufacturing the same.SOLUTION: An integrated circuit device includes a substrate having a memory cell area and a peripheral circuit area extending around the memory cell area, cell transistors in the memory cell area, a peripheral circuit transistor in the peripheral circuit area, a capacitor structure including lower electrodes on the cell transistors, a dielectric film on a surface of the lower electrodes, an upper material film on the dielectric film, and a metal plate film on the upper material film, an interlayer insulating film covering the metal plate film in the memory cell area and covering the peripheral circuit transistor in the peripheral circuit area, and an etching stop pattern in the interlayer insulating film at a boundary portion between the memory cell area and the peripheral circuit area, spaced laterally from a sidewall of the metal plate film and extending vertically.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to an integrated circuit device and a method for manufacturing the same, and more particularly to an integrated circuit device including a capacitor and a method for manufacturing the same. [Background technology]

[0002] Recently, with the rapid development of miniaturized semiconductor process technology, the area of ​​a unit cell is being reduced as the integration density of integrated circuit devices is accelerating. Therefore, the area that a capacitor can occupy within a unit cell is also being reduced. For example, in the case of dynamic random access memory (DRAM), As the integration density of integrated circuit devices such as semiconductor memory increases, the area of ​​a unit cell becomes smaller while the required capacitance is maintained or increased. As a result, a capacitor structure is required that overcomes spatial and design rule limitations, improves capacitance, and maintains desired electrical characteristics. Summary of the Invention [Problem to be solved by the invention]

[0003] The technical problem to be solved by the present invention is to provide an integrated circuit device and a manufacturing method thereof, which can prevent peeling defects of a metal plate layer in a capacitor structure including an upper material layer and a metal plate layer as an upper electrode.

[0004] The problems that the technical idea of ​​the present invention is intended to solve are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description. [Means for solving the problem]

[0005] An integrated circuit device according to the technical concept of the present invention includes a substrate having a memory cell region and a peripheral circuit region disposed around the memory cell region; a plurality of cell transistors disposed in the memory cell region; a peripheral circuit transistor disposed in the peripheral circuit region; a capacitor structure including a lower electrode disposed on the plurality of cell transistors, a dielectric film disposed on a surface of the lower electrode, an upper material film disposed on the dielectric film, and a metal plate film disposed on the upper material film; an interlayer insulating film covering the metal plate film in the memory cell region and covering the peripheral circuit transistors in the peripheral circuit region; and an etch stop pattern disposed within the interlayer insulating film at a boundary between the memory cell region and the peripheral circuit region, horizontally spaced from a sidewall of the metal plate film and extending vertically.

[0006] an integrated circuit device according to the technical concept of the present invention includes a substrate having a memory cell region and a peripheral circuit region disposed around the memory cell region; a plurality of cell transistors disposed in the memory cell region; a peripheral circuit transistor disposed in the peripheral circuit region; a capacitor structure including a lower electrode disposed on the plurality of cell transistors, a dielectric film disposed on a surface of the lower electrode, an upper material film disposed on the dielectric film, and a metal plate film disposed on the upper material film; an interlayer insulating film covering the metal plate film in the memory cell region and covering the peripheral circuit transistors in the peripheral circuit region; a first etch stop pattern disposed within the interlayer insulating film at a boundary between the memory cell region and the peripheral circuit region, spaced horizontally from a sidewall of the metal plate film and extending vertically; and a second etch stop pattern disposed on the interlayer insulating film in the memory cell region, spaced vertically from a top surface of the metal plate film and extending horizontally.

[0007] an integrated circuit device according to the technical concept of the present invention includes a substrate including a memory cell region and a peripheral circuit region disposed on at least one side of the memory cell region; a plurality of cell transistors disposed in the memory cell region; a peripheral circuit transistor disposed in the peripheral circuit region; a capacitor structure including a lower electrode disposed on the plurality of cell transistors, a dielectric layer disposed on a surface of the lower electrode, an upper material layer disposed on the dielectric layer, and a metal plate layer disposed on the upper material layer; an interlayer insulating layer covering the metal plate layer in the memory cell region and covering the peripheral circuit transistor in the peripheral circuit region; a vertical etch stop pattern disposed within the interlayer insulating layer at a boundary between the memory cell region and the peripheral circuit region, spaced horizontally from a sidewall of the metal plate layer, and extending vertically; a metal contact penetrating the interlayer insulating layer in the memory cell region and connected to the metal plate layer; and a peripheral circuit contact penetrating the interlayer insulating layer in the peripheral circuit region and connected to the peripheral circuit transistor; the vertical etch stop pattern is made of a material having an etch selectivity with respect to the interlayer insulating layer.

[0008] A method for manufacturing an integrated circuit device according to the technical concept of the present invention includes the steps of: preparing a substrate having a memory cell region and a peripheral circuit region disposed around the memory cell region; forming a plurality of cell transistors in the memory cell region, forming peripheral circuit transistors in the peripheral circuit region, and contact pads connected to the peripheral circuit transistors; sequentially forming lower electrodes disposed on the plurality of cell transistors, a dielectric film disposed on a surface of the lower electrodes, and an upper material film disposed on the dielectric film; conformally forming a metal plate film to cover the upper material film in the memory cell region and to cover the contact pads in the peripheral circuit region; and conformally forming the metal plate film. forming a first interlayer insulating film conformally covering the first interlayer insulating film; forming an etch stop film conformally covering the first interlayer insulating film and made of a material having an etch selectivity with the first interlayer insulating film; removing a portion of the etch stop film and a portion of the first interlayer insulating film in the peripheral circuit region to expose a portion of the metal plate film; removing a portion of the metal plate film in the peripheral circuit region to expose the contact pad; forming a second interlayer insulating film conformally covering the etch stop film and the contact pad; polishing the second interlayer insulating film to expose a top surface of the etch stop film; and removing a portion of the etch stop film. Effect of the Invention

[0009] The integrated circuit device according to the technical concept of the present invention has an advantage of having a low defect rate and high reliability since it is possible to prevent peeling of the metal plate layer in a capacitor structure including an upper material layer and a metal plate layer as an upper electrode. [Brief description of the drawings]

[0010] [Figure 1] 1 is a layout diagram illustrating an integrated circuit device according to an embodiment of the inventive concept; [Diagram 2] FIG. 2 is an enlarged view of a portion A1 in FIG. [Diagram 3] FIG. 3 is a cross-sectional view taken along line B1-B1' in FIG. [Figure 4] 4 is a cross-sectional view of an integrated circuit device according to another embodiment of the technical concept of the present invention; [Figure 5A] 4 is a cross-sectional view of an integrated circuit device according to another embodiment of the technical concept of the present invention; [Figure 5B] 4 is a cross-sectional view of an integrated circuit device according to another embodiment of the technical concept of the present invention; [Figure 6] 2 is a flow chart illustrating a method for manufacturing an integrated circuit device according to one embodiment of the inventive concept. [Figure 7] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 8] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 9] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 10] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 11] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 12] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 13] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 14] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 15] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 16]1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 17] 1A to 1C are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the present invention. [Figure 18] 1 is a layout diagram illustrating an integrated circuit device according to still another embodiment of the technical concept of the present invention. [Figure 19] 19 is a cross-sectional view taken along the line C1-C1' in FIG. 18. [Figure 20] 1 is a block diagram showing a system including an integrated circuit device according to an embodiment of the inventive concept; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the technical concept of the present invention will be described in detail with reference to the accompanying drawings.

[0012] FIG. 1 is a layout diagram showing an integrated circuit device according to one embodiment of the technical concept of the present invention, FIG. 2 is an enlarged view of portion A1 of FIG. 1, and FIG. 3 is a cross-sectional view taken along line B1-B1' of FIG. 2.

[0013] 1 through 3 together, the integrated circuit device 100 also includes a substrate 110 that includes a memory cell area MCA and a peripheral circuit area PCA.

[0014] The memory cell area MCA is a dynamic random access memory (DRAM). The peripheral circuit area PCA may be an array area of ​​volatile memory cells of a DRAM device, and the peripheral circuit area PCA may be a core area or a peripheral circuit area of ​​a DRAM device. For example, the peripheral circuit area PCA may include peripheral circuit transistors PG for transmitting signals and / or power to a memory cell array included in the memory cell area MCA.

[0015] In some embodiments, the peripheral circuit transistor PG may include various circuits such as a command decoder, control logic, an address buffer, a row decoder, a column decoder, a sense amplifier, and a data input / output circuit.

[0016] An isolation trench 112T may be formed in the substrate 110, and an isolation film 112 may be formed in the isolation trench 112T. The isolation film 112 may include silicon oxide, silicon nitride, or a combination thereof. The isolation film 112 may define a plurality of first active regions AC1 in the substrate 110 in the memory cell region MCA, and may define a second active region AC2 in the substrate 110 in the peripheral circuit region PCA.

[0017] In the memory cell area MCA, the first active regions AC1 may be arranged to have their major axes in a diagonal direction relative to the first horizontal direction X and the second horizontal direction Y. A plurality of word lines WL may be extended parallel to each other along the first horizontal direction X across the first active regions AC1. A plurality of bit lines BL may be extended parallel to each other along the second horizontal direction Y on the word lines WL. The bit lines BL may be connected to the first active regions AC1 via direct contacts DC. A plurality of buried contacts BC may be formed between two adjacent bit lines BL among the plurality of bit lines BL. The plurality of buried contacts BC may be arranged in a line along a first horizontal direction X and a second horizontal direction Y. A plurality of landing pads LP may be formed on the plurality of buried contacts BC. The plurality of buried contacts BC and the plurality of landing pads LP may serve to connect a lower electrode 181 of a capacitor structure 180 formed on the plurality of bit lines BL to the first active region AC1. The plurality of landing pads LP may be arranged to partially overlap the buried contacts BC in the vertical direction Z.

[0018] The substrate 110 may be a wafer including silicon (Si). In some embodiments, the substrate 110 may be a wafer including a semiconductor element such as germanium (Ge) or a compound semiconductor such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). The substrate 110 may have a silicon-on-insulator (SOI) structure. The substrate 110 may also include a conductive region, such as an impurity-doped well or structure.

[0019] Direct contacts DC may be formed in the direct contact holes DCH of the substrate 110. The direct contacts DC may be coupled to the first active regions AC1. The direct contacts DC may include doped polysilicon. For example, the direct contacts DC may include polysilicon containing a relatively high concentration of impurities such as phosphorus (P), arsenic (As), bismuth (Bi), or antimony (Sb).

[0020] A plurality of bit lines BL may extend long along the second horizontal direction Y on the substrate 110 and the plurality of direct contacts DC. The plurality of bit lines BL may be connected to the first active region AC1 through the direct contacts DC. Each of the plurality of bit lines BL may include a lower conductive pattern 132A, an intermediate conductive pattern 134A, and an upper conductive pattern 136A stacked in sequence on the substrate 110. The lower conductive pattern 132A may include doped polysilicon. The intermediate conductive pattern 134A and the upper conductive pattern 136A may include TiN, TiSiN, W, tungsten silicide, or a combination thereof. In some embodiments, the intermediate conductive pattern 134A may be made of TiN, TiSiN, or a combination thereof, and the upper conductive pattern 136A may include tungsten.

[0021] The bit lines BL are also covered by insulating capping layers 140A. The insulating capping layers 140A may extend in a second horizontal direction Y on the bit lines BL. Spacers 150A may be disposed on both side walls of each of the bit lines BL. The spacers 150A may extend in the second horizontal direction Y on both side walls of the bit lines BL, and a portion of the spacer 150A may extend into the direct contact hole DCH to cover both side walls of the direct contact DC.

[0022] The direct contact DC may be formed in a direct contact hole DCH formed in the substrate 110 and may extend to a level higher than the upper surface of the substrate 110. For example, the upper surface of the direct contact DC may be disposed at the same level as the upper surface of the lower conductive pattern 132A, and the upper surface of the direct contact DC may contact the bottom surface of the intermediate conductive pattern 134A. Also, the bottom surface of the direct contact DC may be disposed at a level lower than the upper surface of the substrate 110.

[0023] A plurality of insulating fences (not shown) and a plurality of conductive plugs 152 may be arranged in a row between each of the plurality of bit lines BL in a second horizontal direction Y. The plurality of conductive plugs 152 may extend long in a vertical direction Z from recess spaces RS formed in the substrate 110. In the second horizontal direction Y, both side walls of each of the plurality of conductive plugs 152 may be insulated from each other by the plurality of insulating fences. The plurality of conductive plugs 152 may form a plurality of buried contacts BC.

[0024] A plurality of landing pads LP may be formed on the plurality of conductive plugs 152. A metal silicide film (not shown) may be further disposed between the plurality of conductive plugs 152 and the plurality of landing pads LP. The metal silicide film may be made of cobalt silicide, nickel silicide, or manganese silicide. Each of the plurality of landing pads LP may include a conductive barrier film 162A and a landing pad conductive layer 164A. The conductive barrier film 162A may include Ti, TiN, or a combination thereof. The landing pad conductive layer 164A may include a metal, a metal nitride, a conductive polysilicon, or a combination thereof. The plurality of landing pads LP may have an island-type pattern shape in a plan view. The plurality of landing pads LP may be electrically insulated from each other by an insulating pattern 166 surrounding the periphery thereof.

[0025] In the peripheral circuit region PCA, a peripheral circuit transistor PG may be disposed on the second active region AC2. The peripheral circuit transistor PG may include a gate dielectric layer 116, a gate electrode PGS, and a gate capping pattern 140B, which are sequentially stacked on the second active region AC2. The gate dielectric layer 116 is made of at least one selected from silicon oxide, silicon nitride, silicon oxynitride, and a high dielectric material having a higher dielectric constant than silicon oxide. The gate electrode PGS also includes a lower conductive pattern 132B, an intermediate conductive pattern 134B, and an upper conductive pattern 136B. The materials of the lower conductive pattern 132B, the intermediate conductive pattern 134B, and the upper conductive pattern 136B are the same as the materials of the lower conductive pattern 132A, the intermediate conductive pattern 134A, and the upper conductive pattern 136A included in the bit line BL located in the memory cell area MCA. The gate capping pattern 140B also includes silicon nitride.

[0026] In some embodiments, both sidewalls of the gate electrode PGS are also covered by gate spacers 150B. The gate spacers 150B may also include silicon oxide, silicon nitride, or a combination thereof.

[0027] The peripheral circuit transistor PG is also covered by a first insulating film 142. A second insulating film 144 may be disposed on the first insulating film 142. In the peripheral circuit region PCA, a contact plug CP may be formed in a contact hole CPH that vertically penetrates the first insulating film 142 and the second insulating film 144. The contact plug CP also includes a conductive barrier film 162B and a landing pad conductive layer 164B, similar to the multiple landing pads LP formed in the memory cell region MCA.

[0028] In the memory cell region MCA, an upper insulating pattern 170 may be disposed on the insulating pattern 166. The upper insulating pattern 170 may include a material having an etch selectivity with respect to the second insulating film 144 and the insulating pattern 166. For example, the upper insulating pattern 170 may include silicon nitride.

[0029] In the memory cell region MCA, a capacitor structure 180 may be disposed on the upper insulating pattern 170. The capacitor structure 180 may include a plurality of lower electrodes 181, a capacitor dielectric layer 183, a silicon germanium layer 185, and a metal plate layer 187. Here, the silicon germanium layer 185 and the metal plate layer 187 may be provided as an upper electrode of the capacitor structure 180. The silicon germanium layer 185 may be referred to as an upper material layer. Here, it is needless to say that the material constituting the upper material layer is not limited to silicon germanium.

[0030] The lower electrodes 181 may extend in the vertical direction Z on the landing pads LP. The bottoms of the lower electrodes 181 may be disposed within the openings of the upper insulating pattern 170. A support layer SPT may be disposed on sidewalls of the lower electrodes 181. The support layer SPT may maintain a constant distance between two adjacent lower electrodes 181 and prevent the lower electrodes 181 from tilting or falling. The support layer SPT may be formed at different levels in the vertical direction Z on the sidewalls of the lower electrodes 181.

[0031] A capacitor dielectric layer 183 may be disposed on the plurality of lower electrodes 181. The capacitor dielectric layer 183 may extend on sidewalls of the plurality of lower electrodes 181, onto an upper surface and a bottom surface of the support layer SPT, and onto the upper insulating pattern 170. A silicon germanium layer 185 may be disposed on the capacitor dielectric layer 183 to cover the plurality of lower electrodes 181.

[0032] In some embodiments, the plurality of bottom electrodes 181 are each made of a metal, such as ruthenium (Ru), titanium (Ti), tantalum (Ta), niobium (Nb), iridium (Ir), molybdenum (Mo), tungsten (W); a conductive metal nitride, such as titanium nitride (TiN), tantalum nitride (TaN), niobium nitride (NbN), molybdenum nitride (MoN), tungsten nitride (WN); and an iridium oxide (IrO 2 ), ruthenium oxide (RuO 2 ), strontium ruthenium oxide (SrRuO 3 ) may be included.

[0033] In some embodiments, the capacitor dielectric film 183 also includes at least one of zirconium oxide, hafnium oxide, titanium oxide, niobium oxide, tantalum oxide, yttrium oxide, strontium titanium oxide, barium strontium titanium oxide, scandium oxide, and lanthanum oxides.

[0034] The plurality of bottom electrodes 181, the capacitor dielectric layer 183, and the silicon germanium layer 185 may be formed only in the memory cell region MCA. That is, the plurality of bottom electrodes 181, the capacitor dielectric layer 183, and the silicon germanium layer 185 are not formed in the peripheral circuit region PCA. Therefore, due to a large step between the memory cell region MCA and the peripheral circuit region PCA, the surface of the silicon germanium layer 185 includes a horizontal upper surface and vertical side surfaces. That is, the silicon germanium layer 185 located on the plurality of bottom electrodes 181 in the memory cell region MCA may have a substantially perpendicular surface.

[0035] A metal plate film 187 may be disposed along the surface of the silicon germanium film 185 having such a shape. Thus, the surface of the metal plate film 187 may include a flat upper surface and vertical side surfaces. However, a lower portion of the metal plate film 187 may be located in the peripheral circuit area PCA. In some embodiments, the metal plate film 187 may include, but is not limited to, tungsten.

[0036] The interlayer insulating film 190 may be disposed to cover both the memory cell region MCA and the peripheral circuit region PCA. The interlayer insulating film 190 may have different thicknesses in the vertical direction Z in the memory cell region MCA and the peripheral circuit region PCA to cover steps due to the presence or absence of the capacitor structure 180.

[0037] In the integrated circuit device 100 of the present invention, an etch stop pattern ESP may be disposed at the boundary between the memory cell region MCA and the peripheral circuit region PCA, more precisely, into the peripheral circuit region PCA and within the interlayer insulating film 190. In some embodiments, the etch stop pattern ESP may be disposed to be spaced apart from a vertical sidewall of the metal plate film 187 in the first horizontal direction X and extend long in the vertical direction Z.

[0038] In some embodiments, the etch stop pattern ESP may be made of a material having an etch selectivity with respect to the interlayer insulating film 190. For example, the interlayer insulating film 190 may include silicon oxide, and the etch stop pattern ESP may include at least one selected from the group consisting of amorphous silicon, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon germanium.

[0039] In some embodiments, the level of the top surface of the etch stop pattern ESP is higher than the level of the top surface of the metal plate film 187. Also, the level of the bottom surface of the etch stop pattern ESP is higher than the level of the bottom surface of the metal plate film 187. In addition, the level of the top surface of the etch stop pattern ESP is lower than the level of the top surface of the interlayer insulating film 190. That is, the etch stop pattern ESP may be completely surrounded by the interlayer insulating film 190.

[0040] In some embodiments, in the first horizontal direction X, the sidewalls of the etch stop patterns ESP may be disposed to face vertical sidewalls of the metal plate film 187. In addition, in the vertical direction Z, the etch stop patterns ESP may be disposed to overlap a lower portion of the metal plate film 187. The reason for the position at which the etch stop patterns ESP are formed will be described in detail in the manufacturing method described below.

[0041] In the memory cell region MCA, a plurality of metal contacts MC may be disposed penetrating the interlayer insulating film 190 and extending in the vertical direction Z. Bottoms of the plurality of metal contacts MC may contact and be electrically connected to the metal plate film 187. That is, the plurality of metal contacts MC may be electrically connected to the upper electrode of the capacitor structure 180 through the metal plate film 187. Each of the plurality of metal contacts MC may also include a conductive barrier film 192 and a contact conductive layer 194.

[0042] In the peripheral circuit region PCA, peripheral circuit contacts PC may be disposed penetrating the interlayer insulating film 190 and extending in the vertical direction Z. The bottom of the peripheral circuit contact PC may be connected to a contact pad, which is an upper part of the contact plug CP. That is, the peripheral circuit contact PC may be electrically connected to the peripheral circuit transistor PG through the contact plug CP. The peripheral circuit contact PC may also include a conductive barrier film 192 and a contact conductive layer 194, similar to the metal contact MC formed in the memory cell region MCA.

[0043] In the integrated circuit element 100 of the present invention, the level of the bottom surface of the plurality of metal contacts MC is lower than the level of the top surface of the etching stop pattern ESP. Also, the level of the bottom surface of the peripheral circuit contact PC is lower than the level of the bottom surface of the etching stop pattern ESP. In addition, in the vertical direction Z, the vertical length of the peripheral circuit contact PC is substantially equal to the sum of the vertical length of the metal plate film 187 and the vertical length of the metal contact MC.

[0044] Recently, with the rapid development of miniaturized semiconductor process technology, the integration of integrated circuit devices has accelerated, and the area of ​​a unit cell has been reduced. Accordingly, the area that a capacitor can occupy within the unit cell has also been reduced. For example, as the integration density of integrated circuit devices such as DRAMs increases, the area of ​​a unit cell has become smaller, while the required capacitance has been maintained or increased. As a result, a structure that can overcome spatial limitations and design rule limitations in a capacitor, improve capacitance, and maintain desired electrical characteristics is required.

[0045] Recently, in order to secure a sensing margin in the capacitor structure 180 in the integrated circuit device 100, a metal plate film 187 is formed to cover the silicon germanium film 185, and both the silicon germanium film 185 and the metal plate film 187 are used as upper electrodes. In this case, in a polishing process of the interlayer insulating film 190 covering the metal plate film 187, a peeling defect occurs in which the corners of the metal plate film 187 are separated from each other.

[0046] In order to efficiently solve such defects, according to the technical idea of ​​the present invention, first, a part of the interlayer insulating film 190 (referred to as a first interlayer insulating film) is formed on the metal plate film 187 so as to completely cover the metal plate film 187, and then an etching stop film is formed on the first interlayer insulating film. Then, the remaining part of the interlayer insulating film 190 (referred to as a second interlayer insulating film) is formed, and finally, a polishing process is performed on the second interlayer insulating film to form the interlayer insulating film 190 of the integrated circuit device 100. In some embodiments, a part of the etching stop film is removed, and an etching stop pattern ESP may be present inside the interlayer insulating film 190. In such a manufacturing method, since the first interlayer insulating film is formed with a sufficient thickness under the etching stop film, the metal plate film 187 may be protected by the first interlayer insulating film even in a portion where over-etching may occur (e.g., a corner portion).

[0047] Ultimately, the integrated circuit device 100 according to the technical concept of the present invention can prevent peeling defects of the metal plate film 187 in the capacitor structure 180 including the silicon germanium film 185 and the metal plate film 187 as an upper electrode, thereby having a low defect rate and high reliability.

[0048] 4, 5A and 5B are cross-sectional views of an integrated circuit device according to another embodiment of the inventive concept.

[0049] Most of the components and materials constituting the integrated circuit devices 100A, 100B, and 100C described below are substantially the same as or similar to those described above with reference to Figures 1 to 3. Therefore, for ease of explanation, the following description will focus on the differences from the integrated circuit device 100 described above.

[0050] Referring to FIG. 4, the integrated circuit device 100A also includes a substrate 110 that includes a memory cell area MCA and a peripheral circuit area PCA.

[0051] In the integrated circuit device 100A of the present invention, a first etch stop pattern ESP1 may be disposed at a boundary between the memory cell region MCA and the peripheral circuit region PCA, more precisely, within the interlayer insulating film 190A, penetrating into the peripheral circuit region PCA. In some embodiments, the first etch stop pattern ESP1 may be disposed to be spaced apart from a vertical sidewall of the metal plate film 187 in a first horizontal direction X and extend long in a vertical direction Z. The first etch stop pattern ESP1 may be referred to as a vertical etch stop pattern.

[0052] In the integrated circuit device 100A of the present invention, a second etch stop pattern ESP2 may be disposed on the interlayer insulating film 190A in the memory cell region MCA, spaced apart from a top surface of the metal plate film 187 in the vertical direction Z, and extended long in the first horizontal direction X. In some embodiments, the second etch stop pattern ESP2 may be disposed such that it is spaced apart from a horizontal upper surface of the metal plate film 187 in the vertical direction Z, and extended long in the first horizontal direction X. The second etch stop pattern ESP2 may be referred to as a horizontal etch stop pattern.

[0053] The first etch stop pattern ESP1 and the second etch stop pattern ESP2 may be spaced apart from each other at different vertical levels. In some embodiments, the first etch stop pattern ESP1 and the second etch stop pattern ESP2 may each be made of a material having an etch selectivity with respect to the interlayer insulating film 190A. For example, the interlayer insulating film 190A may include silicon oxide, and the first etch stop pattern ESP1 and the second etch stop pattern ESP2 may each include at least one selected from amorphous silicon, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon germanium. Here, the first etch stop pattern ESP1 and the second etch stop pattern ESP2 may each include the same material.

[0054] In the memory cell region MCA, a plurality of metal contacts MC may be disposed penetrating the second etch stop pattern ESP2 and the interlayer insulating film 190A and extending in the vertical direction Z. Bottoms of the plurality of metal contacts MC may contact and be electrically connected to the metal plate film 187. That is, the plurality of metal contacts MC may be electrically connected to the upper electrode of the capacitor structure 180 through the metal plate film 187. Sidewalls of the plurality of metal contacts MC may contact the second etch stop pattern ESP2 and the interlayer insulating film 190A.

[0055] In the peripheral circuit region PCA, peripheral circuit contacts PC may be disposed penetrating the interlayer insulating film 190A and extending in the vertical direction Z. The bottoms of the peripheral circuit contacts PC may be connected to contact pads, which are the tops of the contact plugs CP. That is, the peripheral circuit contacts PC may be electrically connected to the peripheral circuit transistors PG through the contact plugs CP. The sidewalls of the peripheral circuit contacts PC contact the interlayer insulating film 190A but do not contact the second etch stop pattern ESP2.

[0056] Referring to FIG. 5A, the integrated circuit device 100B also includes a substrate 110 that includes a memory cell area MCA and a peripheral circuit area PCA.

[0057] In the integrated circuit device 100B of the present invention, the interlayer insulating film 190B may be disposed to cover both the memory cell region MCA and the peripheral circuit region PCA. The interlayer insulating film 190B may have different thicknesses in the vertical direction Z in the memory cell region MCA and the peripheral circuit region PCA to cover the steps caused by the presence or absence of the capacitor structure 180.

[0058] In the integrated circuit element 100B of the present invention, there is no etching stop pattern ESP (FIG. 3). More specifically, first, a part of the interlayer insulating film 190B (referred to as a first interlayer insulating film) is formed on the metal plate film 187 so as to completely cover the metal plate film 187, and then an etching stop film is formed on the first interlayer insulating film. Next, a part of the first interlayer insulating film and a part of the etching stop film are removed. In addition, the remaining part of the interlayer insulating film 190B (referred to as a second interlayer insulating film) is formed, and finally, a polishing process is performed on the second interlayer insulating film to form the interlayer insulating film 190B of the integrated circuit element 100B. After the polishing process, the etching stop film is removed, and there is no etching stop pattern ESP (FIG. 3) inside or outside the interlayer insulating film 190B.

[0059] Referring to FIG. 5B, the integrated circuit device 100C also includes a substrate 110 that includes a memory cell area MCA and a peripheral circuit area PCA.

[0060] In the integrated circuit element 100C of the present invention, the interlayer insulating film 190C may be disposed to cover both the memory cell area MCA and the peripheral circuit area PCA. Also, like the integrated circuit element 100B (FIG. 5A) described above, the integrated circuit element 100C does not have an etch stop pattern ESP (FIG. 3).

[0061] In the integrated circuit device 100C of the present invention, during the deposition process of the silicon germanium film 185C, more deposition may occur at the corners than at other parts. As a result, the silicon germanium film 185C may have overhangs (OH) at the corners. In addition, since the metal plate film 187C is conformally formed along the silicon germanium film 185C, the metal plate film 187C may also have overhangs (OH) at the corners.

[0062] FIG. 6 is a flow chart illustrating a method for fabricating an integrated circuit device according to one embodiment of the inventive concept.

[0063] Referring to FIG. 6, the method of manufacturing an integrated circuit device (S200) includes a process sequence of a first step (S210) to an eighth step (S280).

[0064] It is understood that certain embodiments may be implemented differently, and therefore certain steps may be performed out of the order described. For example, two steps described in succession may be performed substantially simultaneously or in the reverse order from that described.

[0065] The method for manufacturing an integrated circuit device according to the technical idea of ​​the present invention (S200) includes a first step (S210) of forming a cell transistor in a memory cell region and a peripheral circuit transistor and a contact pad connected thereto in a peripheral circuit region, a second step (S220) of forming a lower electrode, a dielectric film and a silicon germanium film disposed on a plurality of cell transistors, a third step (S230) of conformally forming a metal plate film covering the silicon germanium film in the memory cell region and covering the contact pad in the peripheral circuit region, and a third step (S240) of conformally forming a metal plate film covering the silicon germanium film in the memory cell region and the contact pad in the peripheral circuit region. The method also includes a fourth step (S240) of forming a first interlayer insulating film conformally covering the first interlayer insulating film; a fifth step (S250) of forming an etch stop film conformally covering the first interlayer insulating film; a sixth step (S260) of removing a portion of the etch stop film, a portion of the first interlayer insulating film, and a portion of the metal plate film in the peripheral circuit region to expose the contact pads; a seventh step (S270) of forming a second interlayer insulating film conformally covering the etch stop film and the contact pads; and an eighth step (S280) of polishing the second interlayer insulating film to expose the etch stop film.

[0066] The technical features of each of the first to eighth steps (S210, S280) will be described in detail with reference to FIGS.

[0067] 7 to 17 are cross-sectional views illustrating a method for manufacturing an integrated circuit device according to an embodiment of the technical concept of the present invention.

[0068] 7, a plurality of isolation trenches 112T and a plurality of isolation layers 112 may be formed in a substrate 110 having a memory cell region MCA and a peripheral circuit region PCA.

[0069] A plurality of first active regions AC1 are defined in the memory cell region MCA of the substrate 110 by the plurality of element isolation films 112, and a plurality of second active regions AC2 are defined in the peripheral circuit region PCA.

[0070] Next, a gate dielectric film 116 may be formed on the substrate 110 in the peripheral circuit area PCA.

[0071] Next, a portion of the substrate 110 may be removed to form a direct contact hole DCH exposing the first active region AC1, and a direct contact DC may be formed in the direct contact hole DCH.

[0072] Next, a bit line BL and an insulating capping layer 140A may be formed on the direct contact DC, and a gate electrode PGS and a gate capping pattern 140B may be formed on the gate dielectric layer 116.

[0073] Next, a gate spacer 150B may be formed on the sidewall of the gate electrode PGS, and a first insulating film 142 may be formed to cover the gate electrode PGS.

[0074] Next, in the memory cell area MCA, spacers 150A may be formed on sidewalls of the bit lines BL and the insulating capping layers 140A, forming a plurality of insulating fences (not shown) between the plurality of bit lines BL.

[0075] Next, a portion of the substrate 110 disposed at the bottom of a contact space (not shown) between the plurality of bit lines BL and the plurality of insulating fences may be removed to form a plurality of recess spaces RS exposing the first active regions AC1 between the plurality of bit lines BL.

[0076] Next, a plurality of conductive plugs 152 may be formed between the plurality of bit lines BL, filling a portion of the contact space while filling the plurality of recess spaces RS.

[0077] Next, in the peripheral circuit area PCA, the first insulating film 142 may be etched to form a plurality of contact holes CPH exposing the second active area AC2.

[0078] Next, a plurality of landing pads LP composed of a conductive barrier film 172A and a landing pad conductive layer 174A can be formed in the memory cell area MCA, and a plurality of contact plugs CP composed of a conductive barrier film 172B and a landing pad conductive layer 174B can be formed in the peripheral circuit area PCA.

[0079] Next, an insulating pattern 166 surrounding sidewalls of the landing pads LP and a second insulating film 144 covering sidewalls of the contact plugs CP may be formed.

[0080] Referring to FIG. 8, in the memory cell region MCA, a mold structure including a first mold layer, a second mold layer, and a third mold layer sequentially disposed on an upper insulating pattern 170 may be formed.

[0081] In addition, a support layer SPT may be selectively formed between the first mold layer and the second mold layer, between the second mold layer and the third mold layer, and on the third mold layer.

[0082] Next, a mask pattern may be formed on the mold structure, and an opening may be formed through the mold structure using the mask pattern as an etching mask, and a bottom electrode 181 may be formed in the opening.

[0083] Then, the mold structure may be removed, and the upper insulating pattern 170, the lower electrode 181, and the support layer SPT may be formed.

[0084] 9, a capacitor dielectric layer 183 may be formed on the upper insulating pattern 170, the lower electrode 181 and the support layer SPT, and a silicon germanium layer 185 and a metal plate layer 187 may be sequentially formed thereon.

[0085] Specifically, in the memory cell area MCA, the metal plate film 187 may be conformally formed to cover the silicon germanium film 185, and in the peripheral circuit area PCA, the metal plate film 187 may be conformally formed to cover the contact pads of each of the contact plugs CP. The metal plate film 187 may include tungsten, but is not limited thereto.

[0086] Referring to FIG. 10, a first interlayer insulating layer 190P may be formed to conformally cover the metal plate layer 187. As shown in FIG.

[0087] Specifically, the first interlayer insulating film 190P can constitute a part of the interlayer insulating film 190 (FIG. 15) described later. The first interlayer insulating film 190P can include silicon oxide, but is not limited to this.

[0088] Referring to FIG. 11, an etch stop layer ESL may be formed to conformally cover the first interlayer insulating layer 190P.

[0089] Specifically, the etch stop layer ESL may be separated into a first etch stop pattern ESP1 (FIG. 12) and a second etch stop pattern ESP2 (FIG. 12) described below. The etch stop layer ESL may be made of a material having an etch selectivity with respect to the first interlayer insulating film 190P. The etch stop layer ESL may include at least one selected from the group consisting of amorphous silicon, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon germanium, but is not limited thereto.

[0090] 12, in the peripheral circuit area PCA, a portion of the etch stop layer ESL (FIG. 11) and a portion of the first interlayer insulating layer 190P may be removed to expose a portion of the metal plate layer 187.

[0091] Specifically, the etch stop layer ESL (FIG. 11) may be separated into a first etch stop pattern ESP1 and a second etch stop pattern ESP2. The first etch stop pattern ESP1 may be disposed at the boundary between the memory cell region MCA and the peripheral circuit region PCA, more precisely, into the peripheral circuit region PCA, on a sidewall of the first interlayer insulating film 190P. In addition, the second etch stop pattern ESP2 may be disposed on an upper surface of the first interlayer insulating film 190P in the memory cell region MCA.

[0092] Referring to FIG. 13, in the peripheral circuit area PCA, a portion of the metal plate layer 187 may be removed to expose the contact pads of each of the contact plugs CP.

[0093] Specifically, an outermost sidewall of the first etch stop pattern ESP1, an outermost sidewall of the first interlayer insulating film 190P, and an outermost sidewall of the metal plate film 187 may be coplanar in the vertical direction Z.

[0094] Referring to FIG. 14, a second interlayer insulating layer 190Q may be formed to conformally cover the first and second etch stop patterns ESP1 and ESP2, and the contact pads of each of the contact plugs CP.

[0095] Specifically, the second interlayer insulating film 190Q may constitute a part of the interlayer insulating film 190 (FIG. 15) described later. The second interlayer insulating film 190Q may contain silicon oxide, like the first interlayer insulating film 190P, but is not limited to this.

[0096] Referring to FIG. 15, the second interlayer insulating film 190Q (FIG. 14) may be polished using the second etch stop pattern ESP2 as an etch stop layer.

[0097] Specifically, the upper portion of the second interlayer insulating film 190Q (FIG. 14) may be polished to expose the upper surface of the second etch stop pattern ESP2. Through such a polishing process, the interlayer insulating film 190 may be formed of the first interlayer insulating film 190P (FIG. 14) and the second interlayer insulating film 190Q (FIG. 14).

[0098] That is, first, a first interlayer insulating film 190P (FIG. 10) is formed on the metal plate film 187, and then an etching stop film ESL (FIG. 11) is formed on the first interlayer insulating film 190P (FIG. 11). Thereafter, a second interlayer insulating film 190Q (FIG. 14) is formed, and a polishing process is performed on the second interlayer insulating film 190Q (FIG. 14) to form the interlayer insulating film 190.

[0099] According to the technical idea of ​​the present invention, a first interlayer insulating film 190P (FIG. 11) of sufficient thickness is formed under the etching stop film ESL (FIG. 11), so that the metal plate film 187 can be protected by the first interlayer insulating film 190P (see FIG. 11) even in areas where over-etching may occur (e.g., corner areas) during the polishing process of the second interlayer insulating film 190Q (FIG. 14).

[0100] Referring to FIG. 16, optionally, the second etch stop pattern ESP2 (FIG. 15) may be removed to form a plurality of metal contact holes MCH penetrating the interlayer insulating film 190 in the memory cell region MCA, and a peripheral circuit contact hole PCH penetrating the interlayer insulating film 190 in the peripheral circuit region PCA.

[0101] Although a step of removing the second etch stop pattern ESP2 (FIG. 15) is illustrated here, in other embodiments, the second etch stop pattern ESP2 (FIG. 15) is not removed.

[0102] Specifically, the metal contact holes MCH may expose the top surface of the metal plate film 187, and the peripheral circuit contact hole PCH may expose the top surface of the contact pad of the contact plug CP.

[0103] Referring to FIG. 17, a conductive barrier layer 192 conformally covering the inner sidewalls of a plurality of metal contact holes MCH and a conductive barrier layer 192 conformally covering the inner sidewalls of a peripheral circuit contact hole PCH may be formed.

[0104] Specifically, the conductive barrier film 192 may be continuously and conformally formed across the memory cell region MCA and the peripheral circuit region PCA. The conductive barrier film 192 may include, but is not limited to, Ti, TiN, or a combination thereof.

[0105] Referring again to FIG. 3, a contact conductive layer 194 may be formed to fill a plurality of metal contact holes MCH and peripheral circuit contact holes PCH, and an upper portion of the contact conductive layer 194 and an upper portion of the conductive barrier film 192 may be polished to form a plurality of metal contacts MC and peripheral circuit contacts PC.

[0106] The method for manufacturing an integrated circuit device according to the present invention described above has the effect of preventing peeling defects of the metal plate film 187 in the capacitor structure 180 including the silicon germanium film 185 and the metal plate film 187 as an upper electrode, thereby having a low defect rate and high reliability.

[0107] FIG. 18 is a layout diagram showing an integrated circuit device according to still another embodiment of the technical concept of the present invention, and FIG. 19 is a cross-sectional view taken along line C1-C1' of FIG.

[0108] Most of the components and materials constituting the integrated circuit device 300 described below are substantially the same as or similar to those described above with reference to Figures 1 to 3. Therefore, for ease of explanation, the following description will focus on the differences from the integrated circuit device 100 described above.

[0109] 18 and 19, the integrated circuit device 300 also includes a plurality of first conductive lines 320, a channel layer 330, a gate electrode layer 340, a gate insulating layer 350 and a capacitor structure 180 arranged on the memory cell area MCA of the substrate 110.

[0110] The integrated circuit element 300 of the present invention is also a memory element including a vertical channel transistor, which may refer to a structure in which the channel length of the channel layer 330 extends from the substrate 110 along the vertical direction Z.

[0111] A lower insulating layer 312 may be disposed on the substrate 110, and a plurality of first conductive lines 320 may be spaced apart from each other in a first horizontal direction X and extend in a second horizontal direction Y on the lower insulating layer 312. A plurality of first insulating patterns 322 may be disposed on the lower insulating layer 312 to fill spaces between the first conductive lines 320. The first conductive lines 320 may correspond to bit lines BL of the integrated circuit device 300.

[0112] In some embodiments, the first conductive lines 320 may include doped polysilicon, a metal, a conductive metal nitride, a conductive metal silicide, a conductive metal oxide, or a combination thereof. The first conductive lines 320 may include a single layer or multiple layers of the aforementioned materials. In other embodiments, the first conductive lines 320 may include a two-dimensional semiconductor material, such as a graphene, a carbon nanotube, a nanosheet, or a combination thereof.

[0113] The channel layer 330 may be arranged in an island shape spaced apart in a first horizontal direction X and a second horizontal direction Y on the plurality of first conductive lines 320. The channel layer 330 has a first width along the first horizontal direction X and a first height along the vertical direction Z, and the first height may be greater than the first width. A bottom portion of the channel layer 330 may function as a first source / drain region (not shown), an upper portion of the channel layer 330 may function as a second source / drain region (not shown), and a portion of the channel layer 330 between the first source / drain and the second source / drain regions may function as a channel region (not shown).

[0114] The gate electrode layer 340 may surround the sidewalls of the channel layer 330 and extend in the first horizontal direction X. In a plan view, the gate electrode layer 340 may be of a gate-all-around type, in which the gate electrode layer 340 surrounds the entire sidewalls (e.g., all four sidewalls) of the channel layer 330. The gate electrode layer 340 may correspond to a word line WL of the integrated circuit device 300.

[0115] In another embodiment, the gate electrode layer 340 may be of a dual gate type, for example including a first sub-gate electrode (not shown) facing a first sidewall of the channel layer 330 and a second sub-gate electrode (not shown) facing a second sidewall opposite to the first sidewall of the channel layer 330. In yet another embodiment, the gate electrode layer 340 may be of a single gate type covering only the first sidewall of the channel layer 330 and extending in the first horizontal direction X.

[0116] The gate electrode layer 340 may also comprise doped polysilicon, a metal, a conductive metal nitride, a conductive metal silicide, a conductive metal oxide, or a combination thereof.

[0117] A gate insulating layer 350 may surround the sidewalls of the channel layer 330 and be interposed between the channel layer 330 and the gate electrode layer 340. In some embodiments, the gate insulating layer 350 may be made of silicon oxide, silicon oxynitride, a high-k material, or a combination thereof.

[0118] A first buried insulating layer 342 surrounding the lower sidewalls of the channel layer 330 may be disposed on the plurality of first insulating patterns 322, and a second buried insulating layer 344 surrounding the lower sidewalls of the channel layer 330 and covering the gate electrode layer 340 may be disposed on the first buried insulating layer 342.

[0119] A capacitor contact 360 may be disposed on the channel layer 330. The capacitor contacts 360 may be disposed to overlap the channel layer 330 in a vertical direction Z and may be arranged in a matrix shape spaced apart in a first horizontal direction X and a second horizontal direction Y. An upper insulating layer 362 may surround a sidewall of the capacitor contact 360 on the second buried insulating layer 344. An upper insulating pattern 170 may be disposed on the upper insulating layer 362, and a capacitor structure 180 may be disposed on the upper insulating pattern 170.

[0120] FIG. 20 is a block diagram showing a system including an integrated circuit device according to an embodiment of the inventive concept.

[0121] Referring to FIG. 20, a system 1000 includes a controller 1010 , an input / output device 1020 , a storage device 1030 , an interface 1040 and a bus 1050 .

[0122] The system 1000 may be a mobile system or a system that transmits or receives information. In some embodiments, the mobile system may be a portable computer, a web tablet, a mobile phone, a digital music player, or a memory card.

[0123] The controller 1010 is for controlling the execution of programs in the system 1000 and may be a microprocessor, a digital signal processor, a microcontroller, or a similar device.

[0124] The input / output device 1020 may be used to input and output data to and from the system 1000. The system 1000 may be connected to an external device, such as a personal computer or a network, using the input / output device 1020 to exchange data with the external device. The input / output device 1020 may be, for example, a touch screen, a touch pad, a keyboard, or a display.

[0125] The memory device 1030 may store data for the operation of the controller 1010 or store data processed by the controller 1010. The memory device 1030 may include any one of the integrated circuit devices 100, 100A, 100B, 100C, and 300 according to the technical concept of the present invention.

[0126] The interface 1040 is also a data transmission path between the system 1000 and an external device. The controller 1010, the input / output device 1020, the storage device 1030, and the interface 1040 may communicate with each other via a bus 1050.

[0127] Although the embodiments of the technical concept of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will understand that the present invention can be embodied in other specific forms without changing the technical concept or essential features of the present invention. Therefore, it should be understood that the embodiments described above are illustrative in all respects and are not limiting. [Explanation of symbols]

[0128] 100, 100A, 100B, 100C Integrated circuit element 110 Substrate 180 Capacitor Structure 181 Lower electrode 183 Capacitor Dielectric Film 185 Silicon Germanium Film 187 Metal Plate Membrane S200 Integrated circuit element manufacturing method 300 Integrated circuit elements ESP Etch Stop Pattern MCA Memory Cell Area PCA peripheral circuit area

Claims

1. a substrate having a memory cell region and a peripheral circuit region arranged around the memory cell region; a plurality of cell transistors arranged in the memory cell region; a peripheral circuit transistor disposed in the peripheral circuit region; a capacitor structure including a lower electrode disposed on the plurality of cell transistors, a dielectric layer disposed on a surface of the lower electrode, an upper material layer disposed on the dielectric layer, and a metal plate layer disposed on the upper material layer; an interlayer insulating film covering the metal plate film in the memory cell region and covering the peripheral circuit transistors in the peripheral circuit region; an etch stop pattern disposed within the interlayer insulating film at a boundary between the memory cell region and the peripheral circuit region, spaced horizontally from a sidewall of the metal plate film, and extending vertically.

2. the level of the top surface of the etch stop pattern is higher than the level of the top surface of the metal plate film; the level of the bottom surface of the etch stop pattern is higher than the level of the bottom surface of the metal plate film; 2. The integrated circuit device according to claim 1, wherein the level of the top surface of the etch stop pattern is lower than the level of the top surface of the interlayer insulating film.

3. In the horizontal direction, a sidewall of the etching stop pattern and a sidewall of the metal plate film are disposed to face each other; 2. The integrated circuit device according to claim 1, wherein the etch stop pattern is disposed to overlap the metal plate film in the vertical direction.

4. 2. The integrated circuit device of claim 1, wherein the etch stop pattern is completely surrounded by the interlayer insulating film.

5. a metal contact penetrating the interlayer insulating film in the memory cell region and connected to the metal plate film; 2. The integrated circuit device of claim 1, further comprising: a peripheral circuit contact in the peripheral circuit region, the peripheral circuit contact penetrating the interlayer insulating film and connected to the peripheral circuit transistor.

6. the level of the bottom surface of the metal contact is lower than the level of the top surface of the etch stop pattern; 6. The integrated circuit device of claim 5, wherein the level of the bottom surface of the peripheral circuit contact is lower than the level of the bottom surface of the etch stop pattern.

7. 6. The integrated circuit device of claim 5, wherein the length of the peripheral circuit contact along the vertical direction is longer than the length of the metal plate film along the vertical direction.

8. 2. The integrated circuit device of claim 1, wherein the upper material layer and the metal plate layer are an upper electrode of the capacitor structure, the upper material layer comprising a silicon germanium layer, and the metal plate layer comprising tungsten.

9. 2. The integrated circuit device of claim 1, wherein the etch stop pattern is made of a material having an etch selectivity with respect to the interlayer insulating film.

10. the interlayer insulating film contains silicon oxide; 10. The integrated circuit device of claim 9, wherein the etch stop pattern comprises at least one selected from the group consisting of amorphous silicon, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon germanium.

11. a substrate having a memory cell region and a peripheral circuit region arranged around the memory cell region; a plurality of cell transistors arranged in the memory cell region; a peripheral circuit transistor disposed in the peripheral circuit region; a capacitor structure including a lower electrode disposed on the plurality of cell transistors, a dielectric layer disposed on a surface of the lower electrode, an upper material layer disposed on the dielectric layer, and a metal plate layer disposed on the upper material layer; an interlayer insulating film covering the metal plate film in the memory cell region and covering the peripheral circuit transistors in the peripheral circuit region; a first etch stop pattern disposed within the interlayer insulating film at a boundary between the memory cell region and the peripheral circuit region, spaced apart from a sidewall of the metal plate film in a horizontal direction and extending vertically; a second etch stop pattern disposed on the interlayer insulating film in the memory cell region, spaced apart from a top surface of the metal plate film in the vertical direction and extending long in the horizontal direction.

12. the first etch stop pattern and the second etch stop pattern are spaced apart from each other at different vertical levels; A sidewall of the first etch stop pattern is disposed opposite a sidewall of the metal plate film in the horizontal direction; 12. The integrated circuit device of claim 11, wherein a bottom surface of the second etch stop pattern and a top surface of the metal plate film are disposed opposite each other in the vertical direction.

13. a metal contact penetrating the second etch stop pattern and the interlayer insulating layer in the memory cell region and connected to the metal plate layer; 12. The integrated circuit device of claim 11, further comprising: a peripheral circuit contact in the peripheral circuit region, the peripheral circuit contact penetrating the interlayer insulating film and connected to the peripheral circuit transistor.

14. a sidewall of the metal contact contacts the second etch stop pattern and the interlayer dielectric; 14. The integrated circuit device of claim 13, wherein a sidewall of the peripheral circuit contact contacts the interlayer insulating film but does not contact the second etch stop pattern.

15. the interlayer insulating film contains silicon oxide; the first etch stop pattern and the second etch stop pattern include the same material as each other; 12. The integrated circuit device of claim 11, wherein each of the first etch stop pattern and the second etch stop pattern comprises at least one selected from the group consisting of amorphous silicon, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon germanium.

16. a substrate including a memory cell region and a peripheral circuit region disposed on at least one side of the memory cell region; a plurality of cell transistors arranged in the memory cell region; a peripheral circuit transistor disposed in the peripheral circuit region; a capacitor structure including a lower electrode disposed on the plurality of cell transistors, a dielectric layer disposed on a surface of the lower electrode, an upper material layer disposed on the dielectric layer, and a metal plate layer disposed on the upper material layer; an interlayer insulating film covering the metal plate film in the memory cell region and covering the peripheral circuit transistors in the peripheral circuit region; a vertical etch stop pattern disposed within the interlayer insulating film at a boundary between the memory cell region and the peripheral circuit region, spaced apart from a sidewall of the metal plate film in a horizontal direction and extending vertically; a metal contact penetrating the interlayer insulating film in the memory cell region and connected to the metal plate film; a peripheral circuit contact penetrating the interlayer insulating film in the peripheral circuit region and connected to the peripheral circuit transistor; 4. An integrated circuit device comprising: a first insulating layer formed on said first insulating film and a second insulating layer formed on said second insulating film;

17. the level of the top surface of the metal plate film is lower than the level of the top surface of the vertical etch stop pattern; the level of the bottom surface of the metal contact is lower than the level of the top surface of the vertical etch stop pattern; 17. The integrated circuit device of claim 16, wherein the level of the bottom surface of the peripheral circuit contact is lower than the level of the bottom surface of the vertical etch stop pattern.

18. a horizontal etch stop pattern disposed on the interlayer insulating film in the memory cell region, spaced apart from a top surface of the metal plate film in the vertical direction and extending in the horizontal direction; 17. The integrated circuit device of claim 16, wherein the horizontal etch stop pattern and the vertical etch stop pattern comprise the same material.

19. the vertical etch stop pattern is positioned so as to be completely surrounded by the interlayer insulating film; 20. The integrated circuit device of claim 18, wherein the horizontal etch stop pattern is disposed on the interlayer dielectric.

20. the upper material film includes a silicon germanium film; the metal plate film includes tungsten; the interlayer insulating film contains silicon oxide; 20. The integrated circuit device of claim 18, wherein each of the horizontal etch stop pattern and the vertical etch stop pattern comprises at least one selected from the group consisting of amorphous silicon, silicon nitride, silicon oxynitride, silicon carbonitride, and silicon germanium.

Images