Surface acoustic wave (SAW) filter package employing enhanced thermally conductive cavity frame for heat dissipation and related manufacturing method

Abstract

A surface acoustic wave (SAW) filter package (103) employing an enhanced thermally conductive cavity frame (128) for heat dissipation and related manufacturing methods are disclosed. The SAW filter package also includes a cavity frame including a perimeter structure and a cavity (120) inside the perimeter structure bonded to a substrate of a piezoelectric material (104) including interdigital transducers (IDTs) (108(1), 108(2)). A cap substrate (126) is disposed on the perimeter structure of the cavity frame to surround the air cavity (120) inside the perimeter structure between the substrate and the cap substrate. In an exemplary embodiment, the cavity frame is made of a material with enhanced thermal conductivity greater than 5 W / Km, such as diamond, silicon nitride, aluminum oxide, and sapphire, to effectively dissipate heat generated in the SAW filter package and maintain the desired performance of the SAW filter. Heat generated in the SAW filter package can be more effectively dissipated, especially at the edges and corners of the cavity frame where hot spots may occur. The edges of the cap substrate (126) and frame (128) may be aligned for manufacturing, particularly alignment of the cap and base substrates, and flip-chip connection to the top of the cap substrate with the sidewalls of the cap substrate and frame aligned outwards.

Description

[Technical field]

[0001] Priority Application

[0001] This application claims priority to U.S. Patent Application Publication No. 17 / 409,282, filed August 23, 2021, entitled "SURFACE ACOUSTIC WAVE (SAW) FILTER PACKAGES EMPLOYING AN ENHANCED THERMALLY CONDUCTIVE CAVITY FRAME FOR HEAT DISSIPATION, AND RELATED FABRICATION METHODS," the entire contents of which are incorporated herein by reference. [Background technology]

[0002] I. Field of Disclosure The field of the disclosure relates to surface acoustic wave (SAW) filters, and more particularly to SAW filter packages.

[0003] II. Background

[0003] Mobile wireless device manufacturers pack ever-increasing performance into handheld-sized packages. Increasing performance means that more electronic components must fit into the package. This trend drives the size reduction of electronic components used in radio frequency (RF) signal processing. A challenge to miniaturizing electronic components is to find ways to provide the same functionality in physically smaller electronic devices. Another challenge for miniaturizing electronic components is created by physically smaller devices that dissipate the same or similar amount of power resulting in the same or similar heat generation. The heat generated in the physically smaller device leads to higher operating temperatures in the smaller package, which can affect the performance of the device and its lifespan. Therefore, it is desirable to find ways to dissipate heat more effectively when reducing device size.

[0004]

[0004] One device employed in RF signal processing circuits in smaller electronic devices for signal filtering is the surface acoustic wave (SAW) filter. SAW filters remove or reduce energy in one or more frequency bands from an input analog signal. SAW filters filter frequencies by converting electromagnetic wave propagation to mechanical wave propagation on the surface of a substrate material. As an example, SAW filters can be implemented in die-sized SAW packages (DSSPs) for use in mobile devices. SAW DSSP technology has been important in reducing the size of mobile devices. However, there is a continuing need for further size reduction of SAW DSSPs and effective heat dissipation as such devices are scaled down. Summary of the Invention

[0005]

[0005] Aspects disclosed herein include a surface acoustic wave (SAW) filter package employing an enhanced thermally conductive cavity frame for heat dissipation. Related manufacturing methods are also disclosed. The SAW filter package includes a functional substrate ("substrate"), the substrate including a piezoelectric material and having a first surface with first and second interdigital transducers (IDTs) disposed therein to provide a SAW filter circuit. The SAW filter package also includes a cavity frame including a frame perimeter structure and a cavity inside the frame perimeter structure bonded to the substrate. A cap substrate is disposed on the frame perimeter structure of the cavity frame to enclose an air cavity inside the frame perimeter structure between the substrate and the cap substrate. In an exemplary aspect, the cavity frame is constructed of a material with enhanced thermal conductivity to effectively dissipate heat generated within the SAW filter package to maintain desired performance of the SAW filter. For example, the cavity frame may be constructed of a diamond material to provide a diamond cavity frame. As another example, the cavity frame may be constructed from a material having a thermal conductivity of at least 5 Watts (W) per meter (m) per Kelvin (W / mK) In this manner, heat generated within the SAW filter package can be more effectively dissipated, especially at the edges and corners of the cavity frame where hot spots may particularly occur.

[0006]

[0006] In addition, in other exemplary aspects, the sidewalls of the cavity frame are aligned or coplanar with the sidewalls of the cap substrate in the vertical direction, as opposed to the sidewalls of the cavity frame extending further outward from the sidewalls of the cap substrate forming a shoulder region or offset frame edge. In this manner, the area of ​​the SAW filter is reduced in the horizontal direction to reduce the area of ​​the SAW filter package, which may be desirable when the SAW filter package is employed in a device with reduced area available for circuit packaging. Aligning the sidewalls of the cavity frame and the cap substrate can also reduce the metal interconnect path length between the metal interconnects (e.g., solder bumps) on the cap substrate and the metal interconnects on the substrate. In certain other exemplary aspects, the cavity frame is patterned and formed on the cap substrate as opposed to the substrate to achieve coplanarity between the cap substrate and the cavity frame sidewalls. This allows the cavity frame patterned on the cap substrate to be diced in the vertical direction in the dicing step, so that the respective side walls are flush in the vertical direction. This can avoid or reduce misalignment between the cap substrate and the cavity frame that may otherwise occur if the cavity frame is formed on the substrate, and the cap substrate must be aligned and bonded to the cavity frame having a larger width to provide alignment tolerance to the cap substrate. Furthermore, forming the cavity frame on the cap substrate can also be advantageous when the thermal budget for depositing the cavity frame material exceeds the thermal budget of the substrate. This can avoid diffusion of metal interconnects in the metallization layer of the substrate, which may adversely affect the performance of the SAW filter package. The cap substrate can be formed from a material that does not include metallization structures, and therefore can withstand an increased thermal budget for depositing the cavity frame material.

[0007]

[0007] In this regard, in one exemplary aspect, a SAW filter package is disclosed. The SAW filter package includes a substrate including a piezoelectric material and having a first surface. The SAW filter package also includes a cap substrate. The SAW filter package also includes a diamond cavity frame disposed between the substrate and the cap substrate forming a cavity between the cap substrate and the first surface of the substrate. The SAW filter package also includes a first IDT on the first surface of the substrate within the cavity. The SAW filter package also includes a second IDT on the first surface of the substrate within the cavity.

[0008]

[0008] In another exemplary aspect, a SAW filter package is disclosed. The SAW filter package includes a substrate including a piezoelectric material and having a first surface. The SAW filter package also includes a cap substrate. The SAW filter package also includes a cavity frame having a thermal conductivity of at least 5 Watts (W) per meter (m) per Kelvin (W / mK). The cavity frame is disposed between the substrate and the cap substrate forming a cavity between the cap substrate and the first surface of the substrate. The SAW filter package also includes a first IDT on the first surface of the substrate within the cavity. The SAW filter package also includes a second IDT on the first surface of the substrate within the cavity.

[0009]

[0009] In another exemplary aspect, a method of manufacturing a SAW filter package is disclosed. The method includes providing a cap substrate including a first surface. The method also includes bonding the first surface of a cavity frame to the cap substrate. The cavity frame has a thermal conductivity of at least 5 W / mK. The method also includes providing a substrate including a piezoelectric material, a first surface, a first IDT on the first surface of the substrate, and a second IDT on the first surface of the substrate. The method also includes bonding the second surface of the cavity frame to the first surface of the substrate to form a cavity between the cap substrate and the first surface of the substrate, enclosing the first IDT and the second IDT. [Brief description of the drawings]

[0010] [Figure 1A]

[0010] A side cross-sectional view of an exemplary circuit package including a surface acoustic wave (SAW) filter package employing an enhanced thermally conductive cavity frame for heat dissipation, and a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths. [Figure 1B]

[0011] FIG. 1B is a perspective side view of a SAW filter package within the circuit package of FIG. 1A employing an enhanced thermally conductive cavity frame for heat dissipation and a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths. [Figure 2A]

[0012] FIG. 2 is a cross-sectional side view of the SAW filter package of FIGS. 1A and 1B employing an enhanced thermally conductive cavity frame for heat dissipation and a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths. [Figure 2B]

[0013] 2B is a perspective side view of the SAW filter package of FIG. 2A showing the frame perimeter structure of the cavity frame. [Figure 2C]

[0014] 2B is an enlarged cross-sectional side view of a cross section of the SAW filter package of FIG. 2A showing the coplanarity of the cap substrate and the cavity frame. [Diagram 3]

[0015] FIG. 1 is a side cross-sectional view of a SAW filter package that does not include an enhanced thermally conductive cavity frame for heat dissipation and a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths. [Figure 4]

[0016] FIG. 4 is a flow chart illustrating an exemplary process for manufacturing a SAW filter package using a reinforced thermally conductive cavity frame for heat dissipation having a coplanar cap substrate and cavity frame, including but not limited to the SAW filter packages of FIGS. 1A-2C. [Figure 5A]

[0017] FIG. 4 is a flowchart illustrating another exemplary process for manufacturing a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter packages of FIGS. 1A-2C. [Figure 5B] FIG. 4 is a flowchart illustrating another exemplary process for manufacturing a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter packages of FIGS. 1A-2C. [Figure 5C] FIG. 4 is a flowchart illustrating another exemplary process for manufacturing a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter packages of FIGS. 1A-2C. [Figure 6A]

[0018] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6B] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6C] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6D] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6E] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6F] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6G] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6H] 5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 6I]5A-5C show exemplary manufacturing stages during the manufacture of a reinforced thermally conductive cavity frame that is flush with a cap substrate for a SAW filter package for heat dissipation, including but not limited to the cavity frame and cap substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process. [Figure 7]

[0019] 1A-1C are flowcharts illustrating an exemplary process for manufacturing a substrate for a SAW filter package, including but not limited to the substrate in the SAW filter package of FIGS. [Figure 8A]

[0020] 8 illustrates an exemplary manufacturing stage during the manufacture of a substrate for a SAW filter package, including but not limited to the substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process of FIG. 7. [Figure 8B] 8 illustrates an exemplary manufacturing stage during the manufacture of a substrate for a SAW filter package, including but not limited to the substrate in the SAW filter package of FIGS. 1A-2C, according to the exemplary manufacturing process of FIG. 7. [Figure 9]

[0021] FIG. 2 is a flowchart illustrating an exemplary process for assembling a reinforced, thermally conductive cavity frame coplanar with a cap substrate and bonded to a substrate to create a SAW filter package, including but not limited to the SAW filter packages of FIGS. 1A-2C. [Figure 10A]

[0022] 9 illustrates an exemplary manufacturing stage during assembly of a reinforced, thermally conductive cavity frame coplanar with a cap substrate that is bonded to a substrate to create a SAW filter package, including but not limited to the SAW filter packages of FIGS. 1A-2C, according to the exemplary manufacturing process of FIG. [Figure 10B]9 illustrates an exemplary manufacturing stage during assembly of a reinforced, thermally conductive cavity frame coplanar with a cap substrate that is bonded to a substrate to create a SAW filter package, including but not limited to the SAW filter packages of FIGS. 1A-2C, according to the exemplary manufacturing process of FIG. [Figure 11]

[0023] 1 is a side cross-sectional view of an exemplary circuit package including a SAW filter employing an enhanced thermally conductive cavity frame for heat dissipation. [Figure 12A]

[0024] FIG. 12 is a perspective side view of a SAW filter package within the circuit package of FIG. 11 employing an enhanced thermally conductive cavity frame for heat dissipation. [Figure 12B]

[0025] 12 is a side cross-sectional view of the SAW filter package of FIG. 11 employing an enhanced thermally conductive cavity frame for heat dissipation. [Figure 13]

[0026] FIG. 1A-FIG. 2C and FIG. 11-FIG. 12B, and in accordance with the exemplary manufacturing process of FIG. 4-FIG. 10B, and includes components that may include a SAW filter package employing an enhanced thermally conductive cavity frame for heat dissipation and / or a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths. [Figure 14]

[0027] FIG. 1A-FIG. 2C and FIG. 11-FIG. 12B, and in accordance with the exemplary manufacturing process of FIG. 4-FIG. 10B, is a block diagram of an exemplary wireless communication device including radio frequency (RF) components that may include a SAW filter package employing an enhanced thermally conductive cavity frame for heat dissipation and / or a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths, including, but not limited to, a SAW filter package according to the exemplary manufacturing process of FIG. 4-FIG. 10B. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011]

[0028] Some exemplary aspects of the present disclosure will now be described with reference to the drawings. The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any aspect described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other aspects.

[0012]

[0029] The embodiments disclosed herein include a surface acoustic wave (SAW) filter package employing an enhanced thermally conductive cavity frame for heat dissipation. Related manufacturing methods are also disclosed. The SAW filter package includes a functional substrate ("substrate"), the substrate including a piezoelectric material and having a first surface with first and second interdigital transducers (IDTs) disposed therein to provide a SAW filter circuit. The SAW filter package also includes a cavity frame including a frame perimeter structure and a cavity inside the frame perimeter structure bonded to the substrate. A cap substrate is disposed on the frame perimeter structure of the cavity frame to enclose an air cavity inside the frame perimeter structure between the substrate and the cap substrate. In an exemplary embodiment, the cavity frame is constructed of a material with enhanced thermal conductivity to effectively dissipate heat generated within the SAW filter package to maintain desired performance of the SAW filter. For example, the cavity frame may be constructed of a diamond material to provide a diamond cavity frame. As another example, the cavity frame may be constructed from a material having a thermal conductivity of at least 5 Watts (W) per meter (m) per Kelvin (W / mK) In this manner, heat generated within the SAW filter package can be more effectively dissipated, especially at the edges and corners of the cavity frame where hot spots may particularly occur.

[0013]

[0030] Also, in other exemplary aspects, the sidewalls of the cavity frame are aligned or coplanar with the sidewalls of the cap substrate in the vertical direction, as opposed to the sidewalls of the cavity frame extending further outward from the sidewalls of the cap substrate forming a shoulder region or offset frame edge. In this manner, the area of ​​the SAW filter is reduced in the horizontal direction to reduce the area of ​​the SAW filter package, which may be desirable when the SAW filter package is employed in a device with reduced area available for circuit packaging. Aligning the sidewalls of the cavity frame and the cap substrate can also reduce the metal interconnect path length between the metal interconnects (e.g., solder bumps) on the cap substrate and the metal interconnects on the substrate. In certain other exemplary aspects, the cavity frame is patterned and formed on the cap substrate as opposed to the substrate to achieve coplanarity between the cap substrate and the cavity frame sidewalls. This allows the cavity frame patterned on the cap substrate to be diced in the vertical direction during the dicing step, with the respective sidewalls being coplanar in the vertical direction. This can avoid or reduce misalignment between the cap substrate and the cavity frame that would otherwise occur if the cavity frame were formed on the substrate, and the cap substrate would have to be aligned and bonded to a cavity frame with a larger width to provide alignment tolerances to the cap substrate. Furthermore, forming the cavity frame on the cap substrate can also be advantageous when the thermal budget for depositing the cavity frame material exceeds the thermal budget of the substrate. This can avoid diffusion of metal interconnects in the metallization layer of the substrate, which can adversely affect the performance of the SAW filter package. The cap substrate can be formed from a material that does not include metallization structures and can therefore withstand the increased thermal budget for depositing the cavity frame material.

[0014]

[0031] In this regard, FIG. 1A is a side cross-sectional view of an exemplary circuit package 100 including a SAW filter package 102 providing a SAW filter circuit 103. The SAW filter package of FIG. 1A is shown along the cross-sectional line A1-A1′ of FIG. 1B. Each of the SAW filter packages 102 is configured to reject a particular frequency range of an input radio frequency (RF) signal. For example, the circuit package 100 may be included in another integrated circuit (IC) package including an RF transmitting and receiving circuit and an antenna, and the SAW filter package 102 is employed to filter the transmitted and / or received RF signal. The SAW filter package 102 includes a substrate 104 made of a piezoelectric material 106 in this example. A first interdigital transducer (IDT) 108(1) is disposed on a first surface 110 of the substrate 104 as an input circuit. A second IDT 108(2) is also disposed on the first surface 110 of the substrate 104 adjacent to the first IDT 108(1) as an output circuit. The first IDT 108(1) is configured to receive an RF signal via a first metal interconnect 112(1) coupled to a first metal conductor 114(1). The first metal conductor 114(1) is coupled to a metal interconnect 124 (e.g., metal line, metal trace, vertical interconnect access (via)) in metallization layers 116(1), 116(2) in the package substrate 118 via a metal interconnect 122(2) (e.g., solder bump, solder ball) on the cap substrate 126 to a signal source. The first IDT 108(1) is configured to convert the received electrical RF signal into an acoustic wave that is radiated in a cavity 120 formed between the substrate 104 and the cap substrate 126. In this example, the cavity 120 is an air cavity. The second IDT 108(2) is configured to receive a filtered acoustic wave of the radiated acoustic wave radiated by the first IDT 108(1) and convert the filtered acoustic wave into a filtered RF signal that is coupled to a second metal interconnect 112(2) that is coupled to a second metal conductor 114(2).The second metal conductor 114(2) is coupled to a metal interconnect 124 in the metallization layers 116(1), 116(2) in the package substrate 118 via a metal interconnect 122(2) (e.g., a solder bump, a solder ball) on the cap substrate 126 to another circuit for receiving the filtered RF signal.

[0015]

[0032] To form the cavity 120 in the SAW filter package 102 of FIG. 1A, the cap substrate 126 is disposed on a cavity frame 128 disposed on the substrate 104. The cavity frame 128 provides a standoff between the cap substrate 126 and the substrate 104. The cap substrate 126 is a substrate of material used to form the cavity 120. The cap substrate 126 is disposed on the frame perimeter structure of the cavity frame 128 to enclose the cavity 120 inside the frame perimeter structure between the substrate 104 and the cap substrate 126. As a result of the operation of the SAW filter circuit 103, heat is generated inside the cavity 120. Excess heat that is not effectively dissipated can increase the temperature of the SAW filter circuit 103 and adversely affect its filtering performance. The SAW filter circuit 103 shifts its rejection frequency upward at lower temperatures and shifts its rejection frequency linearly downward at higher temperatures. It is therefore important to effectively dissipate heat generated in the SAW filter package 102 to maintain the desired performance of the SAW filter circuit 103. In this regard, as described in more detail below, in this example, the cavity frame 128 is constructed of a material having enhanced thermal conductivity, as opposed to, for example, a polymeric material that is not a good thermal conductor. For example, the cavity frame 128 may be constructed of a diamond material to provide a diamond cavity frame. As another example, the cavity frame 128 may be constructed of a material having a thermal conductivity of at least 5 watts (W) per meter (m) per Kelvin (W / mK). The diamond cavity frame may have a thermal conductivity of 600 to 2,000 W / mK, including between 600 and 2,000 W / mK. In this manner, heat generated in the SAW filter package 102 may be more effectively dissipated, particularly at the edges and corners of the cavity frame 128 where hot spots may particularly occur.

[0016]

[0033] Additionally, as described in more detail below, in this example, the SAW filter package 102 employs a cap substrate 126 having sidewalls 130 that are flush with sidewalls 132 of the cavity frame 128 in a vertical direction along the Z axis. This is also shown in the perspective side view of the SAW filter package 102 in FIG. 1B. This contrasts with the sidewalls 130 of the cap substrate 126 being horizontally offset in a Y axis direction from the sidewalls 132 of the cavity frame 128. This can facilitate a reduced die size of the SAW filter package 102 in the X axis direction and shorter metal interconnect paths for the metal conductors 114(1), 114(2). Aligning the sidewalls 132, 130 of the cavity frame 128 with the cap substrate 126 can also reduce the path length of the metal conductors 114(1), 114(2) between the metal interconnects 112(1), 112(2) on the substrate 104, the metal interconnects 122(1), 122(2) on the cap substrate 126, and the metal interconnects 112(1), 112(2) on the substrate 104. In certain other exemplary embodiments, to achieve coplanarity between the sidewalls 130 of the cap substrate 126 and the sidewalls 132 of the cavity frame 128, the cavity frame 128 can be patterned and formed on the cap substrate 126 first in the manufacturing process of the SAW filter package 102, as shown in FIG. 1B. This is in contrast to forming the cavity frame 128 on the substrate 104 first. This allows the cavity frame 128 patterned on the cap substrate 126 to be diced vertically (Z-axis direction) during the dicing step such that the sidewalls 130, 132 of the cap substrate 126 and the cavity frame 128 are vertically coplanar. This can avoid or reduce misalignment between the cap substrate 126 and the cavity frame 128 that may otherwise occur if the cavity frame 128 is first formed on the substrate 104.The latter scenario may require the cavity frame 128 to have a larger width in the horizontal direction (X-axis direction) to support providing alignment tolerance between the cavity frame 128 and the cap substrate 126. Additionally, forming the cavity frame 128 in the horizontal direction (X-axis direction) on the cap substrate 126 may also be advantageous when the thermal budget for depositing the material of the cavity frame 128 exceeds the thermal budget of the substrate 104. For example, heat generated by the deposition of the cavity frame 128 may be dissipated by the metal interconnects 124 in the metallization layers 116(1), 116(2) of the substrate 104, which may adversely affect the performance of the circuit package 100. The cap substrate 126 may be formed from a material that does not include metallization structures and therefore can withstand the increased thermal budget of the material deposition of the cavity frame 128.

[0017]

[0034] 2A and 2B are provided to provide more exemplary details of the SAW filter package 102 of FIGURES 1A and 1B, which employs an enhanced thermally conductive cavity frame 128 for heat dissipation and a coplanar cap substrate 126 and cavity frame 128 for reduced die size and shorter path lengths of the metal conductors 114(1), 114(2). FIGURE 2A is a side cross-sectional view of the SAW filter package 102 of FIGURES 1A and 1B. FIGURE 2B is a perspective side view of the SAW filter package of FIGURE 2A, showing the frame perimeter structure of the cavity frame 128.

[0018]

[0035] In this regard, as shown in FIG. 2A, the first IDT 108(1) and the second IDT 108(2) are disposed on the first surface 110 of the substrate 104. The cavity frame 128 is disposed between the cap substrate 126 and the first surface 110 of the substrate 104. As shown in FIG. 2B, the cavity frame 128 includes a frame perimeter structure 200 having an internal cavity 202 inside the frame perimeter structure 200. The internal cavity 202 forms the cavity 120 of the SAW filter package 102 as a result of the cavity frame 128 being disposed between the substate 104 and the cap substate 126. As previously mentioned, the cavity frame 128 can have a thermal conductivity of at least 5 W / mK so as to be more effective in dissipating heat generated within the SAW filter package 102. This is in contrast to providing the cavity frame 128 of a polymer material, which can have a thermal conductivity of 0.1-0.5 W / mK. For example, the cavity frame 128 may be a diamond cavity frame made from a diamond material having a thermal conductivity between 600 and 2,000 W / mK, inclusive. Providing the cavity frame 128 as a diamond cavity frame also allows the material of the cap substrate 126 to be provided as a less expensive material, such as silicon, since the cavity frame 128 is formed on the cap substrate 126 in an exemplary manufacturing process, as described below. The diamond material can be deposited (e.g., via a deposition or sputtering process) and bonded to the silicon.

[0019]

[0036] 2A , the frame perimeter structure 200 includes a first perimeter surface 204(1) disposed on or adjacent to the first surface 110 of the substrate 104. Other examples of materials that may be used to form the cavity frame 128 and have enhanced thermal conductivity include, by way of non-limiting example, aluminum oxide, silicon nitride, and / or sapphire. The frame perimeter structure 200 also has a second perimeter surface 204(2) that is opposite the first perimeter surface 204(1) in the vertical axis direction (Z-axis direction). The second perimeter surface 204(2) of the frame perimeter structure 200 is disposed on or adjacent to the second surface 205 of the cap substrate 126. The metal interconnects 208(1), 208(2) are disposed on or adjacent to the first surface 210 of the cap substrate 126 to support bonding of the metal interconnects 122(1), 122(2) to the metal conductors 114(1), 114(2). The first perimeter surface 204(1) of the frame perimeter structure 200 of the cavity frame 128 may be disposed on pads 213 disposed on the first surface 110 of the substrate 104 to facilitate bonding of the material of the cavity frame 128 to the substrate 104. For example, the pads 213 may be aluminum pads to support bonding of the diamond cavity frame 128 to the substrate 104. The metal interconnects 112(1), 112(2) may also be of aluminum material to facilitate such bonding.

[0020]

[0037] In the example of the SAW filter package 102 shown in FIG. 2B, the frame perimeter structure 200 of the cavity frame 128 includes a rectangular frame perimeter structure including four side structures 206(1)-206(4) arranged at right angles to each other. The four side structures 206(1)-204(4) of the frame perimeter structure 200 define a perimeter with a cavity 207 formed inside the frame perimeter structure 200. The second perimeter surface 204(2) of the frame perimeter structure 200 is formed by the bottom surfaces of the side structures 206(1)-206(4) in FIG. 2B. The second perimeter surface 204(2) of the frame perimeter structure 200 is formed by the top surfaces of the side structures 206(1)-206(4). To further aid in the performance of the SAW filter circuit provided by the SAW filter package 102, the cavity frame 128 may be provided with a coefficient of thermal expansion (CTE) of 10 parts per million (ppm) per degree Celsius (C) (ppm / °C) or less. In this manner, the cavity frame 128 is less susceptible to expansion and contraction in response to temperature changes that may occur due to heat generated during operation of the SAW filter circuit 103. For example, a cavity frame 128 made from a diamond material may have a CTE of 1 ppm / °C or less. Additionally, to reduce or minimize electrical interference between the cavity frame 128 of the SAW filter package 102 and the substrate 104 and IDTs 108(1), 108(2), a CTE of 1×10 10 The cavity frame 128 can be provided of a material having an electrical resistivity of ohm-centimeters (cm) (ohm-cm) or greater. For example, a cavity frame 128 made from a diamond material has an electrical resistivity of 1×10 14 and 1×10 18 Contains ohm-cm, 1 x 10 14 ~1×10 18 It may have an electrical resistivity of ohm-cm.

[0021]

[0038] FIG. 2C is an enlarged side cross-sectional view of the SAW filter package 102 of FIG. 2A, showing the coplanarity of the sidewalls 130, 132 of the cap substrate 126 and the cavity frame 128, respectively. As shown, in this example, the sidewalls 130 of the cap substrate 126 and the sidewalls 132 of the cavity frame 128 are coplanar or substantially coplanar with each other along the plane P1. In other words, the sidewalls 130 of the cap substrate 126 and the respective sidewalls 132 extend horizontally (in the X-axis direction) to the same or approximately the same position. The sidewalls 130 of the cap substrate 126 and the sidewalls 132 of the cavity frame 128 extend along longitudinal axes L1, L2, respectively, parallel to each other, to the same or substantially the same position in the horizontal direction of the plane P1 in the YX-axis or in the Y-axis. Although FIG. 2C shows only the left side of the SAW filter package 102 of FIG. 2A and FIG. 2B, the other side of the SAW filter package 102 is provided with the same features. By providing sidewalls 130 of cap substrate 126 and sidewalls 132 of cavity frame 128 that are flat or substantially coplanar, metal conductors 114(1) may extend vertically or in the Z-axis direction along the outside of sidewalls 130 of cap substrate 126 and sidewalls 132 of cavity frame 128 without forming jog or shoulder regions that would exist if sidewalls 130 of cap substrate 126 and sidewalls 132 of cavity frame 128 extended in a horizontally staggered arrangement. This allows the length of metal conductors 114(1), 114(2) to be shortened to reduce the resistivity of the coupling between IDTs 108(1), 108(2) and their respective metal conductors 114(1), 114(2) for improved performance. This is in contrast to, for example, SAW filter package 302 shown in cross section in FIG. 3.

[0022]

[0039] As shown in FIG. 3, the sidewall 330 of the cap substrate 326 is offset from the sidewall 332 of the cavity frame 328. Common elements between the SAW filter package 302 of FIG. 3 and the SAW filter package 102 of FIG. 1 to FIG. 2C are indicated by common element numbers. The sidewall 330 of the cap substrate 326 extends horizontally (in the X-axis direction) in the YX-axis direction to a plane P2. The sidewall 332 of the cavity frame 328 extends horizontally (in the X-axis direction) in the YX-axis direction to a plane P3 that extends further from the cavity 320 than the sidewall 330. This forms a shoulder region 334 between the sidewalls 330, 332, which extends the path length of the metal conductors 314(1), 314(2). The offset cap substrate 326 and cavity frame 328 may also have the effect of expanding the width of the SAW filter package 302 in the horizontal direction (X-axis direction) compared to the SAW filter package 102 of Figures 1A-2C. As mentioned above and described in more detail below, the offset of the cap substrate 326 to the cavity frame 328 in this example may be the result of first forming the cavity frame 328 on the substrate 104 before the cap substrate 326 is placed on the cavity frame 328. Placing the cap substrate 326 on the substrate 104 may require expanding the width of the cavity frame 328 to provide sufficient landing tolerance for the cap substrate 326.

[0023]

[0040] FIG. 4 is a flow chart illustrating an exemplary process 400 for manufacturing a SAW filter package employing an enhanced thermally conductive cavity frame for heat dissipation having a coplanar cap substrate and cavity frame, including, but not limited to, the SAW filter package 102 of FIGS. 1A-2C. The process 400 of FIG. 4 is described with reference to the exemplary SAW filter package 102 of FIGS. 1A-2C. In this regard, a manufacturing step of the manufacturing process 400 for manufacturing the SAW filter package 102 of FIGS. 1A-2C can include providing a cap substrate 126 including a first surface 205 (block 402 of FIG. 4). A next step of the manufacturing process 400 can include bonding a first perimeter surface 204(1) of a cavity frame 128 including a cavity 207 to the cap structure 126 (block 404 of FIG. 4). The cavity frame 128 can have a thermal conductivity of at least 5 W / mK to provide enhanced thermal conductivity for dissipating heat generated within the SAW filter package 102. The cavity frame 128 may be made from a highly thermally conductive material, such as, by way of non-limiting example, diamond, aluminum oxide, silicon nitride, and / or sapphire. A next step in the manufacturing process 400 may include providing a substrate 104 including a piezoelectric material 106, a first surface 110, a first IDT 108(1) on the first surface 110 of the substrate 104, and a second IDT 108(2) on the first surface 110 of the substrate 104 (block 406 of FIG. 4). A next step in the manufacturing process 400 may include bonding a second perimeter surface 204(2) of the cavity frame 128 to the first surface 110 of the substrate 104, thereby forming a cavity 120 between the cap substrate 126 and the first surface 110 of the substrate 104, enclosing the first IDT 108(1) and the second IDT 108(2) (block 408 of FIG. 4).

[0024]

[0041] Other manufacturing methods can be used to manufacture SAW filter packages employing a reinforced thermally conductive cavity frame for heat dissipation having a coplanar cap substrate and cavity frame, including but not limited to the SAW filter package 102 of Figures 1A-2C. For example, Figures 5A-5C are a flow chart illustrating an exemplary manufacturing process 500 for manufacturing a reinforced thermally conductive cavity frame that is coplanar with a cap substrate used in a SAW filter package, including but not limited to the cavity frame 128 and cap substrate 126 in the SAW filter package 102 of Figures 1A-2C. For example, as discussed above with respect to the SAW filter package 102 of Figures 1A-2C, it may be desirable to form the cavity frame 128 on the cap substrate 126 prior to bonding these package components onto the substrate 104 as a convenient way to achieve coplanarity between the sidewalls 130 of the cap substrate 126 and the sidewalls 132 of the cavity frame 128. This can avoid or reduce misalignment between the cap substrate 126 and the cavity frame 128 that may otherwise occur if the cavity frame 128 is formed on the substrate 104, and the cap substrate 126 must be aligned and bonded to the cavity frame 128, which has a staggered width to provide alignment tolerance to the cap substrate 126. Additionally, forming the cavity frame 128 on the cap substrate 126 can also be advantageous when the thermal budget for depositing the material of the cavity frame 128 exceeds the thermal budget of the substrate 104. This can avoid diffusion of metal interconnects in the metallization layers 116(1)-116(2) of the substrate 104, which may adversely affect the performance of the SAW filter package 102. The cap substrate 126 can be formed from a material that does not include metallization structures and therefore can withstand the increased thermal budget for depositing the material of the cavity frame 128.Figures 6A-6I show exemplary manufacturing stages 600A-600I during the fabrication of a reinforced, thermally conductive cavity frame coplanar with a cap substrate for a SAW filter package for heat dissipation, including but not limited to, the cavity frame 128 and cap substrate 126 in the SAW filter package 102 of Figures 1A-2C, according to the exemplary manufacturing process 500 of Figures 5A-5C. The manufacturing process 500 and the exemplary manufacturing stages 600A-600I of Figures 6A-6I will be described with reference to the example SAW filter package 102 of Figures 1A-2C.

[0025]

[0042] In this regard, a step of the manufacturing process 500 of the cavity frame 128 disposed on the cap substrate 126 is to provide the cap substrate 126 (block 502 in FIG. 5A). This is shown in an exemplary manufacturing stage 600A in FIG. 6A. For example, the cap substrate 126 may be a silicon material. As shown in manufacturing stage 600B in FIG. 6B, the next step of the manufacturing process 500 may then include depositing an etching material layer 602 including an etching material 604 on a first surface 606 of the cap substrate 126 (block 504 in FIG. 5A). For example, the etching material 604 may be silicon dioxide. The etching material layer 602 is disposed on the cap substrate 126 as a material into which openings may be patterned for disposing the cavity frame material in the openings to form the cavity frame 128 on the cap substrate 126. This is shown in manufacturing stage 600C in FIG. 6C. As shown in Figure 6C, the next step in the manufacturing process 500 is to pattern the etch material layer 602 to form perimeter openings 608(1), 608(2) in the etch material 604 (block 506 in Figure 5A). Although the manufacturing stage 600C in Figure 6C shows two perimeter openings 608(1), 608(2), it should be noted that the manufacturing stage 600C in Figure 6C is shown as a cross section and that the perimeter opening 608 is formed in the etch material layer 602 in a closed pattern.

[0026]

[0043] As shown in manufacturing stage 600D of FIG. 6D, the next step in the manufacturing process 500 may be to place a cavity frame material 610 used to form the cavity frame 128 in the perimeter openings 608(1), 608(2) (block 508 of FIG. 5B). As shown in manufacturing stage 600E of FIG. 6E, the next step in the manufacturing process 500 may be to grind and / or polish the top surface 612 of the cavity frame material 610 to form the second perimeter surface 204(2) of the cavity frame 128 (block 510 of FIG. 5B). Then, as shown in manufacturing stage 600F of FIG. 6F, the next step in the manufacturing process 500 may be to remove (e.g., etch away) the etching material 604 remaining in the etching material layer 602 to leave the cavity frame 128 formed on the cap substrate 126 (block 512 of FIG. 5B). It should be noted that the manufacturing process 500 may include forming several adjacent cavity frames 128 on the cap substrate 126, which can later be diced to form individual packages as described below.

[0027]

[0044] As shown in manufacturing stage 600G of FIG. 6G, the next step in the manufacturing process 500 may be to back-grind the cap substrate 126 to form the first surface 210 of the cap substrate 126 (block 514 of FIG. 5D). As shown in manufacturing stage 600H of FIG. 6H, a cavity frame 128 having side structures 206(1)-206(4) formed from the cavity frame material 610 is formed on the cap substrate 126 (block 516 of FIG. 5C). As shown in manufacturing stage 600I of FIG. 6I, this process may form a plurality of cavity frames 128 formed on the cap substrate 126. The side structures 206(1)-206(4) may be diced vertically (Z-axis direction) through the cap substrate 126 to form coplanar sidewalls 130, 132 between the cap substrate 126 and the cavity frame 128 as previously described (block 518 of FIG. 6I). For example, a laser may be used to vertically (Z-axis direction) dice the cap substrate 126 to form coplanar sidewalls 130 , 132 between the cap substrate 126 and the cavity frame 128 .

[0028]

[0045] Figure 7 is a flow chart illustrating an exemplary process 700 for manufacturing a substrate for a SAW filter package, including but not limited to the substrate 104 in the SAW filter package 102 of Figures 1A-2C. Figures 8A and 8B illustrate exemplary manufacturing stages 800A, 800B during the manufacturing of a substrate for a SAW filter package, including but not limited to the substrate 104 in the SAW filter package 102 of Figures 1A-2C, according to the exemplary manufacturing process 700 of Figure 7. The manufacturing process 700 and the exemplary manufacturing stages 800A, 800B of Figures 8A and 8B will be described with reference to the example SAW filter package 102 of Figures 1A-2C.

[0029]

[0046] In this regard, as shown in the exemplary manufacturing stage 800A of FIG. 8A, a substrate 104 is provided (block 702 of FIG. 7). For example, the substrate 104 may be a lithium niobate (LiNbO3) substrate. As shown in the exemplary manufacturing stage 800B of FIG. 8B, a metal layer 802 of a metal material 804 is disposed on a first surface 110 of the substrate 104 to form the IDTs 108(1), 108(2) and their metal interconnects 112(1), 112(2) (block 704 of FIG. 7). For example, the metal material 804 may be aluminum, by way of example. 9 and shown in the exemplary manufacturing steps 1000A, 1000B of FIG. 10A and FIG. 10B, the SAW filter package 102 can be assembled by taking the composite cavity frame 128 formed on the cap substrate 126 according to the exemplary manufacturing process 500 and the exemplary manufacturing steps 600A-600I of FIG. 5A-FIG. 6I, and bonding the composite cavity frame 128 to the substrate 104 manufactured according to the exemplary manufacturing process 700 and the exemplary manufacturing steps 800A, 800B of FIG. 8A and FIG. 8B. This forms a cavity 120 between the substate 104 and the cap substrate 126 by the cavity frame 128 disposed between the substate 104 and the cap substrate 126.

[0030]

[0047] In this regard, as shown in the exemplary manufacturing stage 1000A of FIG. 10A, the cavity frame 128 formed on the cap substrate 126 is bonded to the substrate 104 such that the cavity 120 is formed with the IDTs 108(1), 108(2) disposed within the cavity 120 (block 902 of FIG. 9). The metal interconnects 112(1), 112(1) may be provided as, for example, an aluminum material to facilitate bonding of the cavity frame 128 as a diamond cavity frame, as an example. Bonding of the cavity frame 128 formed on the cap substrate 126 to the substrate 104 may be performed at a lower temperature, including room temperature, such that in this example, the higher temperature that may be required to form the cavity frame 128 is performed on the cap substrate 126 and not on the substrate 104, and thus does not exceed the thermal budget of the substrate 104 and therefore does not affect the substrate 104. Thereafter, as shown in exemplary fabrication stage 1000B of FIG. 10B, metal conductors 114(1), 114(2) may be formed on metal interconnects 112(1), 112(2) adjacent sidewalls 130, 132 and on first surface 210 of cap substrate 126 to form interconnects between IDTs 108(1), 108(2) and metal interconnects 122(1), 122(2) (e.g., solder bumps, solder balls) coupled to metal conductors 114(1), 114(2) (block 904 of FIG. 9). Metal conductors 114(1), 114(2) may be formed, for example, by titanium deposition on a copper seed layer and patterned as copper-nickel traces. The metal interconnects 122(1), 122(2) may be formed as solder bumps or balls (eg, SnAugCu solder balls) on the patterned interconnects.

[0031]

[0048] It should be noted that a SAW filter package may also be provided that includes a cavity frame of enhanced thermally conductive material to facilitate heat dissipation, such as the SAW filter package 102 of Figures 1-2C and 5A-10B, but the cavity frame may be formed on the substrate instead of the cap substrate. In this manner, the cavity frame and cap substrate may include a staggered configuration in which their respective side walls do not extend coplanarly from the air cavity to the same location. Such an example of a SAW filter package 102 is shown in Figures 11-12B.

[0032]

[0049] In this regard, FIG. 11 is a side cross-sectional view of an exemplary circuit package 1100 including a SAW filter package 1102 providing a SAW filter circuit 1103. The SAW filter package 1102 is configured to reject a particular frequency range of an input RF signal. For example, the circuit package 1100 may be included in another IC package including an RF transmit / receive circuit and an antenna, and the SAW filter package 1102 is employed to filter the transmitted and / or received RF signal. The SAW filter package 1102 includes a substrate 1104 made of a piezoelectric material 1106 in this example. A first IDT 1108(1) is disposed on a first surface 1110 of the substrate 1104 as an input circuit. A second IDT 1108(2) is also disposed on the first surface 1110 of the substrate 1104 adjacent to the first IDT 1108(1) as an output circuit. The first IDT 1108(1) is configured to receive an RF signal via a first metal interconnect 1112(1) coupled to a first metal conductor 1114(1). The first metal conductor 1114(1) is coupled to a metal interconnect 1124 (e.g., metal line, metal trace, via) in a metallization layer 1116(1), 1116(2) in a package substrate 1118 to a signal source via a metal interconnect 1122(2) (e.g., solder bump, solder ball) on a cap substrate 1126. The first IDT 1108(1) is configured to convert the received electrical RF signal into an acoustic wave that is radiated in a cavity 1120, which may be an air cavity. The second IDT 1108(2) is configured to receive a filtered acoustic wave of the radiated acoustic wave radiated by the first IDT 1108(1) and convert the filtered acoustic wave into a filtered RF signal. The filtered RF signal is coupled to a second metal interconnect 1112(2), which is coupled to a second metal conductor 1114(2).The second metal conductor 1114(2) is coupled to a metal interconnect 1124 in metallization layers 1116(1), 1116(2) in the package substrate 1118 for another circuit via a metal interconnect 1122(2) (e.g., a solder bump, a solder ball) on the cap substrate 1126 to receive the filtered RF signal.

[0033]

[0050] To form the cavity 1120 in the SAW filter package 1102 of FIG. 11, the cap substrate 1126 is disposed on a cavity frame 1128 that is disposed on the substrate 1104. The cavity frame 1128 provides a standoff between the cap substrate 1126 and the substrate 1104. The cap substrate 1126 is a substrate of material used to form the cavity 1120. The cap substrate 1126 is disposed on the frame perimeter structure of the cavity frame 1128 to enclose the cavity 1120 inside the frame perimeter structure between the substrate 1104 and the cap substrate 1126. As a result of the operation of the SAW filter circuit 1103, heat is generated inside the cavity 1120. Excess heat that is not effectively dissipated can increase the temperature of the SAW filter circuit 1103 and adversely affect its filtering performance. The SAW filter circuit 1103 shifts its rejection frequency upward at lower temperatures and shifts its rejection frequency linearly downward at higher temperatures. It is therefore important to effectively dissipate heat generated in the SAW filter package 102 to maintain the desired performance of the SAW filter circuit 1103. In this regard, as described in more detail below, in this example, the cavity frame 1128 is constructed of a material having enhanced thermal conductivity, as opposed to, for example, a polymeric material that is not a good thermal conductor. For example, the cavity frame 1128 may be constructed of a diamond material to provide a diamond cavity frame. As another example, the cavity frame 1128 may be constructed of a material having a thermal conductivity of at least 5 W / mK. The diamond cavity frame may have a thermal conductivity of 600 to 2,000 W / mK, including 600 and 2,000 W / mK. In this manner, heat generated in the SAW filter package 1102 may be more effectively dissipated, particularly at the edges and corners of the cavity frame 1128 where hot spots may particularly occur.

[0034]

[0051] FIG. 12A shows another cross-sectional side view of the SAW filter package 1102 of FIG. 11. As shown in FIG. 12A, the first IDT 1108(1) and the second IDT 1108(2) of the SAW filter package 1102 are disposed on the first surface 1110 of the substrate 1104. The cavity frame 1128 is disposed between the cap substrate 1126 and the first surface 1110 of the substrate 1104. As shown in FIG. 12B, the cavity frame 1128 includes a frame perimeter structure 1200 having an internal cavity 1202 inside the frame perimeter structure 1200. The internal cavity 1202 forms the cavity 1120 of the SAW filter package 1102 as a result of the cavity frame 1128 being disposed between the substate 1014 and the cap substate 1126. As previously mentioned, the cavity frame 1128 may have a thermal conductivity of at least 5 W / mK so as to be more effective in dissipating heat generated within the SAW filter package 1102. This is in contrast to providing the cavity frame 1128 of a polymeric material, which may have a thermal conductivity of 0.1-0.5 W / mK. For example, the cavity frame 1128 may be a diamond cavity frame made of a diamond material having a thermal conductivity of 600-2,000 W / mK, inclusive. Providing the cavity frame 1128 as a diamond cavity frame also allows the material of the cap substrate 1126 to be provided as a less expensive material, such as silicon, since the cavity frame 1128 is formed on the cap substrate 1126 in an exemplary manufacturing process, as described below. The diamond material may be deposited (e.g., via a deposition or sputtering process) and bonded to the silicon.

[0035]

[0052] 12A , the frame perimeter structure 1200 includes a first perimeter surface 1204(1) disposed on or adjacent to the first surface 1110 of the substrate 1104. Other examples of materials that may be used to form the cavity frame 1128 and have enhanced thermal conductivity include, by way of non-limiting example, aluminum oxide, silicon nitride, and / or sapphire. The frame perimeter structure 1200 also has a second perimeter surface 1204(2) that is opposite the first perimeter surface 1204(1) in the vertical axis direction (Z-axis direction). The second perimeter surface 1204(2) of the frame perimeter structure 1200 is disposed on or adjacent to the second surface 1205 of the cap substrate 1126. Metal interconnects 1208(1), 1208(2) are disposed on or adjacent to a first surface 1210 of the cap substrate 1126 to support bonding of metal interconnects 1122(1), 1122(2) to metal conductors 1114(1), 1114(2). A first perimeter surface 1204(1) of frame perimeter structure 1200 of cavity frame 1128 may be disposed on pads 1213 disposed on the first surface 1110 of substrate 1104 to facilitate bonding of the material of cavity frame 1128 to substrate 1104. For example, pads 1213 may be aluminum pads that support bonding of diamond cavity frame 1128 to substrate 1104.

[0036]

[0053] In the example of the SAW filter package 1102 shown in FIG. 12B, the frame perimeter structure 1200 of the cavity frame 1128 includes a rectangular frame perimeter structure including four side structures 1206(1)-1206(4) arranged at right angles to each other. The four side structures 1206(1)-1204(4) of the frame perimeter structure 1200 define a perimeter with a cavity 1207 formed inside the frame perimeter structure 1200. A first perimeter surface 1204(1) of the frame perimeter structure 1200 is formed by the bottom surfaces of the side structures 1206(1)-1206(4) of FIG. 12B. A second perimeter surface 1204(2) of the frame perimeter structure 1200 is formed by the top surfaces of the side structures 1206(1)-206(4). To further aid in the performance of the SAW filter circuit provided by the SAW filter package 1102, the cavity frame 1128 may be provided with a CTE of 10 ppm / °C or less. In this manner, the cavity frame 1128 is less susceptible to expansion and contraction in response to temperature changes that may occur due to heat generated during operation of the SAW filter circuit 1103. For example, a cavity frame 1128 made from a diamond material may have a CTE of 1 ppm / °C or less. Additionally, to reduce or minimize electrical interference between the cavity frame 1128 and the substrate 1104 and the IDTs 1108(1), 1108(2) in the SAW filter package 102, a cavity frame 1128 having a CTE of 1×10 10 The cavity frame 1128 can be provided of a material having an electrical resistivity of ohm-cm or greater. For example, a cavity frame 1128 made from a diamond material has an electrical resistivity of 1×10 14 and 1×10 18 Contains ohm-cm, 1 x 10 14 ~1×10 18 It may have an electrical resistivity of ohm-cm.

[0037]

[0054] Referring back to FIG. 12A, the sidewall 1130 of the cap substrate 1126 is offset from the sidewall 1132 of the cavity frame 1128. The sidewall 1130 of the cap substrate 1126 extends horizontally (X-axis direction) in the YX-axis direction to a plane P4. The sidewall 1132 of the cavity frame 1128 extends horizontally (X-axis direction) in the YX-axis direction to a plane P5 that extends further from the cavity 1120 than the sidewall 1130. This forms a shoulder region 1234 between the sidewalls 1130, 1132 that extends the path length of the metal conductors 1114(1), 1114(2). However, the offset cap substrate 1126 and cavity frame 1128 can also have the effect of expanding the width of the SAW filter package 1102 in the horizontal direction (X-axis direction) compared to the SAW filter package 102 of FIGS. 1A-2C. This is because there is an alignment tolerance between the cavity frame 1128 and the cap substrate 1126 .

[0038]

[0055] SAW filter packages employing enhanced thermally conductive cavity frames for heat dissipation and / or coplanar cap substrates and cavity frames for reduced die size and shorter metal interconnect paths, including but not limited to the exemplary SAW filter packages in Figures 1-2B and 11-12B and according to the exemplary manufacturing processes of Figures 4-10B, may be provided or integrated within any processor-based device. Examples include, but are not limited to, set-top boxes, entertainment units, navigation devices, communication devices, fixed location data units, mobile location data units, global positioning system (GPS) devices, mobile phones, cellular phones, smartphones, session initiation protocol (SIP) phones, tablets, phablets, servers, computers, portable computers, mobile computing devices, wearable computing devices (e.g., smart watches, health or fitness trackers, eyewear, etc.), desktop computers, personal digital assistants (PDAs), monitors, computer monitors, televisions, tuners, radios, satellite radios, music players, digital music players, portable music players, digital video players, video players, digital video disc (DVD) players, portable digital video players, automobiles, vehicle components, avionics systems, drones, and multicopters.

[0039]

[0056] In this regard, FIG. 13 illustrates an example of a processor-based system 1300. A component of the processor-based system 1300 is an IC 1302. Some or all of the IC 1302 in the processor-based system 1300 can be provided in a SAW filter package 1304 employing an enhanced thermally conductive cavity frame for heat dissipation and / or a coplanar cap substrate and cavity frame for reduced die size and shorter metal interconnect paths, including but not limited to the exemplary SAW filter packages in FIGS. 1-2B and 11-12B according to the exemplary manufacturing process of FIGS. 4-10B and according to any embodiment disclosed herein. In this example, the processor-based system 1300 can be formed as a SAW filter package 1304 and as a system-on-chip (SoC) 1306. The processor-based system 1300 includes a CPU 1308 including one or more processors 1310, sometimes referred to as a CPU core or processor core. The CPU 1308 may have a cache memory 1312 coupled to the CPU 1308 for rapid access to temporarily stored data. The CPU 1308 is coupled to a system bus 1314, which may interconnect master and slave devices included within the processor-based system 1300. As is well known, the CPU 1308 communicates with these other devices by exchanging address, control, and data information via the system bus 1314. For example, the CPU 1308 may communicate bus transaction requests to a memory controller 1316, as an example of a slave device. Although not shown in FIG. 13, multiple system buses 1314 may be provided, with each system bus 1314 constituting a different fabric.

[0040]

[0057] Other master and slave devices may be connected to the system bus 1314. As shown in FIG. 13, these devices may include, by way of example, a memory system 1320 including a memory controller 1316 and a memory array 1318(s), one or more input devices 1322, one or more output devices 1324, one or more network interface devices 1326, and one or more display controllers 1328. Each of the memory system 1320, the one or more input devices 1322, the one or more output devices 1324, the one or more network interface devices 1326, and the one or more display controllers 1328 may be provided in the same or different circuit packages. The input device(s) 1322 may include any type of input device, including, but not limited to, input keys, switches, voice processors, and the like. The output device(s) 1324 may include any type of output device, including, but not limited to, audio, video, other visual indicators, and the like. The network interface device(s) 1326 may be any device configured to enable the exchange of data to and from the network 1330. The network 1330 may be any type of network, including, but not limited to, a wired or wireless network, a private or public network, a local area network (LAN), a wireless local area network (WLAN), a wide area network (WAN), a BLUETOOTH network, and the Internet. The network interface device(s) 1326 may be configured to support any type of communication protocol desired.

[0041]

[0058] The CPU 1308 may also be configured to access a display controller(s) 1328 via the system bus 1314 to control information sent to one or more displays 1332. The display controller(s) 1328 send information to the display(s) 1332 for display via one or more video processors 1334, which process the information to be displayed into a format suitable for the display(s) 1332. The display controller(s) 1328 and the video processor(s) 1334 may be included in the same or different circuit package as the SAW filter package 1304, and in the same or different circuit package that includes the CPU 1308, as an example. The display(s) 1332 may include any type of display, including, but not limited to, a cathode ray tube (CRT), a liquid crystal display (LCD), a plasma display, a light emitting diode (LED) display, and the like.

[0042]

[0059] FIG. 14 illustrates an exemplary wireless communication device 1400 including a radio frequency (RF) component formed from one or more ICs 1402, any of which may include a SAW filter package 1403(s) employing an enhanced thermally conductive cavity frame for heat dissipation and / or a flush cap substrate and cavity frame for die size reduction and shorter metal interconnect paths, including, but not limited to, an exemplary SAW filter package according to any embodiment disclosed herein, according to the exemplary manufacturing process of FIG. 4-10B, in FIG. 1-FIG. 2B and FIG. 11-FIG. 12B. The wireless communication device 1400 may include, or be provided within, any of the above-mentioned devices, as examples. As illustrated in FIG. 14, the wireless communication device 1400 includes a transceiver 1404 and a data processor 1406. The data processor 1406 may include a memory for storing data and program codes. The transceiver 1404 includes a transmitter 1408 and a receiver 1410 supporting bidirectional communication. In general, the wireless communication device 1400 may include any number of transmitters 1408 and / or receivers 1410 for any number of communication systems and frequency bands. All or a portion of the transceiver 1404 may be implemented on one or more analog ICs, RFICs, mixed-signal ICs, etc.

[0043]

[0060] The transmitter 1408 or the receiver 1410 can be implemented with a super-heterodyne architecture or a direct-conversion architecture. In the super-heterodyne architecture, the signal is frequency converted between RF and baseband in multiple stages in the receiver 1410, for example, from RF to an intermediate frequency (IF) in one stage and then from IF to baseband in another stage. In the direct-conversion architecture, the signal is frequency converted between RF and baseband in one stage. The super-heterodyne architecture and the direct-conversion architecture may use different circuit blocks and / or have different requirements. In the wireless communication device 1400 in FIG. 14, the transmitter 1408 and the receiver 1410 are implemented with a direct-conversion architecture.

[0044]

[0061] On the transmit path, the data processor 1406 processes data to be transmitted and provides I and Q analog output signals to a transmitter 1408. In the example wireless communication device 1400, the data processor 1406 includes digital-to-analog converters (DACs) 1412(1) and 1412(2) to convert digital signals generated by the data processor 1406 into I and Q analog output signals, e.g., I and Q output currents, for further processing.

[0045]

[0062] Within the transmitter 1408, low pass filters 1414(1) and 1414(2) filter the I and Q analog output signals, respectively, to remove unwanted signals caused by the previous digital-to-analog conversion. Amplifiers (AMPs) 1416(1), 1416(2) amplify the signals from low pass filters 1414(1), 1414(2), respectively, and provide I and Q baseband signals. An upconverter 1418 upconverts the I and Q baseband signals using I and Q TX local oscillator (LO) signals from a transmit (TX) LO signal generator 1422 through mixers 1420(1), 1420(2) to provide an upconverted signal 1424. A filter 1426 filters the upconverted signal 1424 to remove unwanted signals caused by frequency upconversion as well as noise in the receive frequency band. A power amplifier (PA) 1428 amplifies the upconverted signal 1424 from filter 1426 to obtain a desired output power level and provides a transmit RF signal. The transmit RF signal is routed through a duplexer or switch 1430 and transmitted via an antenna 1432.

[0046]

[0063] In the receive path, an antenna 1432 receives a signal transmitted by a base station and provides a received RF signal, which is routed through a duplexer or switch 1430 and provided to a low noise amplifier (LNA) 1434. The duplexer or switch 1430 is designed to operate at a particular RX to TX duplexer frequency separation such that the receive (RX) signal is separated from the TX signal. To obtain a desired RF input signal, the received RF signal is amplified by the LNA 1434 and filtered by a filter 1436. Downconversion mixers 1438(1), 1438(2) mix the output of the filter 1436 with I and Q RX LO signals (i.e., LO_I and LO_Q) from a RX LO signal generator 1440 to generate I and Q baseband signals. The I and Q baseband signals are amplified by AMPs 1442(1), 1442(2) and further filtered by low pass filters 1444(1), 1444(2) to obtain I and Q analog input signals, which are provided to data processor 1406. In this example, data processor 1406 includes analog-to-digital converters (ADCs) 1446(1), 1446(2) to convert the analog input signals to digital signals for further processing by data processor 1406.

[0047]

[0064] In the wireless communication device 1400 of FIG. 14, a TX LO signal generator 1422 generates I and Q TX LO signals used for frequency up-conversion, and a RX LO signal generator 1440 generates I and Q RX LO signals used for frequency down-conversion. Each LO signal is a periodic signal having a particular fundamental frequency. A TX phase-locked loop (PLL) circuit 1448 receives timing information from the data processor 1406 and generates a control signal used to adjust the frequency and / or phase of the TX LO signal from the TX LO signal generator 1422. Similarly, a RX PLL circuit 1450 receives timing information from the data processor 1406 and generates a control signal used to adjust the frequency and / or phase of the RX LO signal from the RX LO signal generator 1440.

[0048]

[0065] Those skilled in the art will further appreciate that the various exemplary logic blocks, modules, circuits, and algorithms described in connection with the aspects disclosed herein may be implemented as electronic hardware, instructions stored in a memory or in another computer-readable medium and executed by a processor or other processing device, or a combination of both. The memory disclosed herein may be any type and size of memory and may be configured to store any type of information desired. To clearly illustrate this interchangeability, various exemplary components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. How such functionality is implemented depends on the particular application, design choices, and / or design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in various ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.

[0049]

[0066] The various example logic blocks, modules, and circuits described in connection with the aspects disclosed herein may be implemented or performed using a processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. The processor may be a microprocessor, but alternatively the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration).

[0050]

[0067] Aspects disclosed herein may be embodied in hardware and instructions stored in the hardware and may reside in, for example, a random access memory (RAM), a flash memory, a read-only memory (ROM), an electrically programmable ROM (EPROM), an electrically erasable programmable ROM (EEPROM), a register, a hard disk, a removable disk, a CD-ROM, or any other form of computer readable medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. Alternatively, the storage medium may be integral to the processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a remote station. Alternatively, the processor and the storage medium may reside as discrete components in a remote station, base station, or server.

[0051]

[0068] It should also be noted that the operational steps described in any of the exemplary aspects herein are described to provide examples and explanations. The described operations may be performed in many different sequences other than the sequence shown. Furthermore, an operation described in a single operational step may actually be performed in several different steps. In addition, one or more operational steps discussed in the exemplary aspects may be combined. It should be understood that many different modifications may be made to the operational steps shown in the flowchart diagrams, as would be readily apparent to one of ordinary skill in the art. Those skilled in the art will also understand that information and signals may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be referred to throughout the above description may be represented by voltages, currents, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0052]

[0069] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other examples. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0053]

[0070] The following numbered clauses describe example implementations. 1. a substrate including a piezoelectric material and having a first surface; A cap substrate; a diamond cavity frame disposed between the substrate and the cap substrate forming a cavity between the cap substrate and a first surface of the substrate; a first interdigital transducer (IDT) on a first surface of the substrate within the cavity; a second IDT on the first surface of the substrate within the cavity; A surface acoustic wave (SAW) filter package comprising: 2. The SAW filter package of claim 1, wherein the cap substrate includes at least one cap substrate sidewall that is vertically coplanar with at least one frame sidewall of the diamond cavity frame. 3. The cap substrate includes a first cap substrate sidewall extending along a first longitudinal axis and a second cap substrate sidewall extending along a second longitudinal axis parallel to the first longitudinal axis; The diamond cavity frame includes a first frame sidewall extending along a first longitudinal axis and a second frame sidewall extending along a second longitudinal axis; the first cap substrate sidewall is coplanar with the first frame sidewall in the vertical direction, and the second cap substrate sidewall is coplanar with the second frame sidewall in the vertical direction; The SAW filter package according to item 1 or 2. 4. The cap substrate includes a rectangular cap substrate frame perimeter structure; The diamond cavity frame includes a rectangular diamond frame perimeter structure; the rectangular cap substrate frame perimeter structure is coplanar with the rectangular diamond frame perimeter structure; Any of the SAW filter packages described in items 1 to 3. 5. The SAW filter package of any of paragraphs 1 to 4, wherein the diamond cavity frame has a thermal conductivity of 600 to 2,000 Watts (W) per meter (m) per Kelvin (W / mK), including 600 and 2,000 Watts (W) per meter (m) per Kelvin (W / mK). 6. A SAW filter package according to any one of clauses 1 to 5, wherein the diamond cavity frame has a coefficient of thermal expansion (CTE) of 1 part per million (ppm) per degree Celsius (C) (ppm / ℃) or less. 7. Diamond cavity frame, 1×10 14 and 1×10 18 Contains ohm-cm, 1 x 10 14 ~1×10 187. The SAW filter package of any of paragraphs 1 to 6, having an electrical resistivity of ohm centimeter (cm) (ohm-cm). 8. A first metal interconnect coupled to a first surface of the cap substrate opposite the second surface of the cap substrate; a second metal interconnect coupled to the first surface of the cap substrate; a first metal conductor disposed on a first of the at least one cap substrate sidewall and on a first of the at least one frame sidewall, coupling the first metal interconnect to the first IDT; a second metal conductor disposed on a second of the at least one cap substrate sidewall and on a second of the at least one frame sidewall, coupling the second metal interconnect to the second IDT; Item 3. The SAW filter package of item 2, further comprising: 9. The SAW filter package according to any one of claims 1 to 8, further comprising an aluminum pad disposed on the first surface of the substrate, The diamond cavity frame is bonded to an aluminum pad to bond the diamond cavity frame to the substrate; A SAW filter package according to any one of items 1 to 8. 10. The SAW filter package of any one of paragraphs 1 to 9, wherein the cap substrate comprises a silicon material. 11. The diamond cavity frame includes a diamond frame perimeter structure including a first perimeter surface and a second perimeter surface bonded to a first surface of the substrate; a cap substrate including a second surface bonded to a second perimeter surface of the diamond frame perimeter structure to surround an inner cavity of the diamond frame perimeter structure between the substrate and the cap substrate; A SAW filter package according to any one of items 1 to 10. 12. The SAW filter package of any of clauses 1 to 11 integrated into a device selected from the group consisting of a set-top box, an entertainment unit, a navigation device, a communication device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smartphone, a session initiation protocol (SIP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a portable digital video player, an automobile, a vehicle component, an avionics system, a drone, and a multicopter. 13. A substrate including a piezoelectric material and having a first surface; A cap substrate; a cavity frame having a thermal conductivity of at least 5 Watts (W) per meter (m) per Kelvin (W / mK), the cavity frame being disposed between the substrate and the cap substrate forming a cavity between the cap substrate and a first surface of the substrate; a first interdigital transducer (IDT) on a first surface of the substrate within the cavity; a second IDT on the first surface of the substrate within the cavity; A surface acoustic wave (SAW) filter package comprising: 14. The SAW filter package of claim 13, wherein the cap substrate includes at least one cap substrate sidewall that is vertically coplanar with at least one frame sidewall of the cavity frame. 15. The cap substrate includes a first cap substrate sidewall extending along a first longitudinal axis and a second cap substrate sidewall extending along a second longitudinal axis parallel to the first longitudinal axis; the cavity frame includes a first frame sidewall extending along a first longitudinal axis and a second frame sidewall extending along a second longitudinal axis; the first cap substrate sidewall is coplanar with the first frame sidewall in the vertical direction, and the second cap substrate sidewall is coplanar with the second frame sidewall in the vertical direction; Item 13 or 14 SAW filter package. 16. The cap substrate includes a rectangular cap substrate frame perimeter structure; The cavity frame includes a rectangular frame perimeter structure; the rectangular cap substrate frame perimeter structure is coplanar with the rectangular frame perimeter structure; Any of the SAW filter packages according to items 13 to 15. 17. A SAW filter package according to any one of clauses 13 to 15, wherein the cavity frame has a coefficient of thermal expansion (CTE) of 10 parts per million (ppm) per degree Celsius (C) (ppm / °C) or less. 18. Cavity frame is 1×10 10 18. The SAW filter package according to any one of items 13 to 17, having an electrical resistivity of ohm centimeter (cm) or more (ohm cm). 19. The SAW filter package of any of paragraphs 13 to 18, wherein the cavity frame includes a material selected from the group consisting of aluminum oxide, silicon nitride, and sapphire. 20. A first metal interconnect coupled to a first surface of the cap substrate opposite the second surface of the cap substrate; a second metal interconnect coupled to the first surface of the cap substrate; a first metal conductor disposed on a first of the at least one cap substrate sidewall and on a first of the at least one frame sidewall, coupling the first metal interconnect to the first IDT; a second metal conductor disposed on a second of the at least one cap substrate sidewall and on a second of the at least one frame sidewall, coupling the second metal interconnect to the second IDT; Item 15. The SAW filter package of item 14, further comprising: 21. The SAW filter package according to any one of claims 13 to 15, further comprising an aluminum pad disposed on the first surface of the substrate, The cavity frame is bonded to an aluminum pad to bond the cavity frame to the substrate; Any of the SAW filter packages according to items 13 to 15. 22. The SAW filter package of any one of paragraphs 13 to 21, wherein the cap substrate comprises a silicon material. 23. The SAW filter package of any of clauses 13 to 22 integrated into a device selected from the group consisting of a set-top box, an entertainment unit, a navigation device, a communication device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smartphone, a session initiation protocol (SIP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a portable digital video player, an automobile, a vehicle component, an avionics system, a drone, and a multicopter. 24. A method for manufacturing a surface acoustic wave (SAW) filter package, comprising: providing a cap substrate including a first surface; bonding a first surface of a cavity frame having a thermal conductivity of at least 5 Watts (W) per meter (m) per Kelvin (W / mK) to a cap substrate; providing a substrate including a piezoelectric material, a first surface, a first interdigital transducer (IDT) on the first surface of the substrate, and a second IDT on the first surface of the substrate; bonding a second surface of the cavity frame to the first surface of the substrate to form a cavity between the cap substrate and the first surface of the substrate to enclose the first IDT and the second IDT; A method comprising: 25. The method of claim 24, including bonding the first surface of the cavity frame to the first surface of the cap substrate before bonding the second surface of the cavity frame to the first surface of the substrate. 26. The method of claim 24 or 25, further comprising forming a cavity frame, the forming comprising: disposing an etching material layer on a first surface of a cap substrate, the etching material layer comprising an etching material; patterning the layer of etch material to form a peripheral opening in the etch material; disposing a cavity frame material of a cavity frame over the etching material and within the peripheral opening of the etching material; removing the etching material layer; Including, The method of paragraph 24 or 25. 27. The method of claim 26, further comprising grinding the cavity frame material to form the second surface of the cavity frame. 28. The method of any of clauses 26 or 27, further comprising vertically dicing the cavity frame coupled to the cap substrate to form one or more cap substrate sidewalls of the cap substrate that are coplanar with one or more frame sidewalls of the cavity frame. 29. The method of any one of paragraphs 26 to 28, further comprising forming a first metal interconnect on the first surface of the substrate, coupling the second surface of the cavity frame to the first surface of the substrate includes coupling the second surface of the cavity frame to a first metal interconnect on the first surface of the substrate; Any of the methods set forth in paragraphs 26 to 28. 30. Forming a second metal interconnect on a second surface of the cap substrate opposite the first surface of the cap substrate; disposing a metal conductor on a cap substrate sidewall of the cap substrate and on a frame sidewall of the cavity frame coupling the first metal interconnect to the second metal interconnect; 30. The method of claim 29, further comprising: 31. The method of any one of paragraphs 24 to 30, wherein the cavity frame includes a diamond cavity frame. 32. The method of any of paragraphs 24 to 31, wherein the cavity frame has a coefficient of thermal expansion (CTE) of 10 parts per million (ppm) per degree Celsius (°C) (ppm / °C) or less. 33. Cavity frame is 1×10 10 33. The method of any of items 24 to 32, having an electrical resistivity of ohm centimeter (cm) or more.

Claims

1. A substrate including a piezoelectric material and having a first surface, A cap substrate, A cavity frame having a thermal conductivity of at least 5 watts (W) per meter (m) per Kelvin (W / m-K), the cavity frame being disposed between the cap substrate and the substrate and forming a cavity between the cap substrate and the first surface of the substrate, A first interdigital transducer (IDT) on the first surface of the substrate within the cavity, A second IDT on the first surface of the substrate within the cavity, A first metal interconnect coupled to the first surface of the substrate, A first metal conductor disposed horizontally on the first metal interconnect and located outside the cavity, A surface acoustic wave (SAW) filter package comprising.

2. The SAW filter package according to claim 1, wherein the cavity frame is a diamond cavity frame.

3. The SAW filter package according to claim 1 or 2, wherein the cap substrate includes at least one cap substrate sidewall that is in the same plane in a direction perpendicular to at least one frame sidewall of the cavity frame.

4. The cap substrate includes a first cap substrate sidewall extending along a first longitudinal axis in a horizontal direction and a second cap substrate sidewall extending along a second longitudinal axis parallel to the first longitudinal axis, The cavity frame includes a first frame sidewall extending along the first longitudinal axis and a second frame sidewall extending along the second longitudinal axis, The first cap substrate sidewall is in the same plane in a vertical direction as the first frame sidewall, and the second cap substrate sidewall is in the same plane in the vertical direction as the second frame sidewall, The SAW filter package according to claim 1 or 2.

5. The cap substrate includes a rectangular cap substrate frame outer peripheral structure, The cavity frame includes a rectangular frame outer peripheral structure, The rectangular cap substrate frame outer peripheral structure is in the same plane in a vertical direction as the rectangular frame outer peripheral structure, The SAW filter package according to claim 1 or 2. **Claim 6**: The diamond cavity frame has a thermal conductivity of 600 to 2,000 W / m-K, including 600 and 2,000 watts (W) per meter (m) per kelvin (W / m-K), for the SAW filter package according to claim 2. **Claim 7** The cavity frame has a coefficient of thermal expansion (CTE) of 10 parts per million (ppm) per degree Celsius (°C) (ppm / °C) or less, for the SAW filter package according to claim 1, or the diamond cavity frame has a CTE of 1 ppm / °C or less, for the SAW filter package according to claim 2. **Claim 8** The cavity frame has an electrical resistivity of 1×10 １０ ohm centimeter (cm) (ohm cm) or more, the SAW filter package according to claim 1, or, The diamond cavity frame has an electrical resistivity of 1×10^14 to 1×10^18 ohm-cm, including 1×10^14 and 1×10^18 ohm-cm, for the SAW filter package according to claim 2. **Claim 9** The cavity frame comprises a material composed of a group consisting of aluminum oxide, silicon nitride, and sapphire, for the SAW filter package according to claim 1. **Claim 10**: A second metal interconnect coupled to a first surface of the cap substrate opposite a second surface of the cap substrate facing the first surface of the substrate, a third metal interconnect coupled to the first surface of the cap substrate, a first metal conductor further disposed on a first cap substrate sidewall of the at least one cap substrate sidewall and a first frame sidewall of the at least one frame sidewall, coupling the second metal interconnect to the first IDT, a second metal conductor disposed on a second cap substrate sidewall of the at least one cap substrate sidewall and a second frame sidewall of the at least one frame sidewall, coupling the third metal interconnect to the second IDT, further comprising the SAW filter package according to claim 3. **Claim 11** further comprising an aluminum pad disposed on the first surface of the substrate, the cavity frame being coupled to the aluminum pad for coupling the cavity frame to the substrate, the SAW filter package according to claim 1 or 2. **Claim 12** the cap substrate comprises a silicon material, for the SAW filter package according to claim 1 or 2. **Claim 13** The SAW filter package according to claim 1 or 2, integrated into a device selected from the group consisting of a set-top box, an entertainment unit, a navigation device, a communication device, a fixed location data unit, a mobile location data unit, a global positioning system (GPS) device, a mobile phone, a cellular phone, a smartphone, a session initiation protocol (SIP) phone, a tablet, a phablet, a server, a computer, a portable computer, a mobile computing device, a wearable computing device, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, a portable digital video player, an automobile, vehicle parts, an avionics system, a drone, and a multicopter.

14. A method of manufacturing a surface acoustic wave (SAW) filter package, comprising: providing a cap substrate having a first surface; coupling a first surface of a cavity frame having a thermal conductivity of at least 5 watts per meter per kelvin (W / m-K) to the cap substrate; providing a substrate comprising a piezoelectric material, a first surface, a first interdigital transducer (IDT) on the first surface of the substrate, a second IDT on the first surface of the substrate, and a first metal interconnect coupled to the first surface of the substrate; forming a cavity between the cap substrate and the first surface of the substrate by coupling a second surface of the cavity frame to the first surface of the substrate, surrounding the first IDT and the second IDT; forming a first metal conductor disposed horizontally on the first metal interconnect and located outside the cavity; A method comprising the above steps.

15. Before coupling the second surface of the cavity frame to the first surface of the substrate, coupling the first surface of the cavity frame to the first surface of the cap substrate. forming the cavity frame, comprising: disposing an etching material layer containing an etching material on the first surface of the cap substrate; patterning the etching material layer to form an outer peripheral opening in the etching material; disposing a cavity frame material of the cavity frame on the etching material and within the outer peripheral opening of the etching material; removing the etching material layer; grinding the cavity frame material to form the second surface of the cavity frame; dicing the cavity frame coupled to the cap substrate in a vertical direction to form one or more cap substrate sidewalls of the cap substrate that are coplanar with one or more frame sidewalls of the cavity frame; forming a first metal interconnect on the first surface of the substrate, wherein coupling the second surface of the cavity frame to the first surface of the substrate comprises coupling the second surface of the cavity frame to the first metal interconnect on the first surface of the substrate; forming a second metal interconnect on a second surface of the cap substrate opposite to the first surface of the cap substrate; disposing a first metal conductor on a cap substrate sidewall of the cap substrate and on a frame sidewall of the cavity frame coupling the first metal interconnect to the second metal interconnect; The method according to claim 14. ​

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