Shower Head Faceplate Configuration

Abstract

A showerhead for processing a substrate includes a backplate and a faceplate attached to the backplate. The faceplate includes a first surface facing the backplate, a second surface opposite the first surface, and a plurality of through holes extending between the first surface and the second surface. At least one of the first surface and the second surface is at least partially contoured.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of U.S. Provisional Patent Application No. 63 / 283,971, filed November 29, 2021. The entire disclosure of the above application is incorporated herein by reference.

[0002] The present disclosure relates generally to substrate processing systems, and more particularly to a faceplate configuration for a showerhead used in a substrate processing system. [Background technology]

[0003] The background description provided herein is intended to provide a general overview of the contents of the present disclosure. Work by the currently named inventors within the scope of what is described in this Background section, as well as aspects of the description that may not otherwise be regarded as prior art at the time of filing, are not admitted, expressly or impliedly, as prior art against the present disclosure.

[0004] A substrate processing system (also referred to as a tool) includes a processing chamber (also referred to as a station or process module). In the processing chamber, a semiconductor substrate (also referred to as a wafer) is placed on a pedestal. One or more process gases are supplied to the processing chamber from a showerhead. A plasma is struck between the showerhead and the pedestal to deposit material on or remove (etch) material from the substrate. Summary of the Invention

[0005] A showerhead for processing a substrate includes a backplate and a faceplate attached to the backplate. The faceplate includes a first surface facing the backplate, a second surface opposite the first surface, and a plurality of through holes extending between the first surface and the second surface. At least one of the first surface and the second surface is at least partially contoured.

[0006] In an additional feature, the contoured portion of at least one of the first surface and the second surface is at least partially concave.

[0007] In an additional feature, the contoured portion of at least one of the first surface and the second surface is at least partially convex.

[0008] In an additional feature, the backplate and the faceplate are cylindrical and the contoured portion of at least one of the first surface and the second surface slopes from an outer diameter of the faceplate to an inner diameter of the faceplate.

[0009] In an additional feature, the backplate and the faceplate are cylindrical and the contoured portion of at least one of the first surface and the second surface slopes from an inner diameter of the faceplate to an outer diameter of the faceplate.

[0010] In an additional feature, the backplate and the faceplate are cylindrical. A first contoured portion of one of the first and second surfaces slopes from an inner diameter of the faceplate to an outer diameter of the faceplate. A second contoured portion of the other of the first and second surfaces slopes from the outer diameter of the faceplate to the inner diameter of the faceplate.

[0011] In an additional feature, the contoured portion of at least one of the first surface and the second surface has a linear slope.

[0012] In an additional feature, at least some contoured portions of at least one of the first surface and the second surface have a polynomial slope.

[0013] In an additional feature, at least some contoured portions of at least one of the first surface and the second surface have a linear slope and a polynomial slope.

[0014] In an additional feature, the contoured portion of at least one of the first surface and the second surface extends at least partially toward the backplate.

[0015] In an additional feature, the contoured portion of at least one of the first surface and the second surface extends at least partially in a direction away from the backplate.

[0016] In additional features, the first contoured portion of one of the first and second sides extends at least partially toward the backplate, and the second contoured portion of the other of the first and second sides extends at least partially away from the backplate.

[0017] In an additional feature, the through hole is disposed within a contoured portion of at least one of the first surface and the second surface.

[0018] In an additional feature, a portion of the through hole is disposed outside of the contoured portion of at least one of the first surface and the second surface.

[0019] In an additional feature, the backplate and the faceplate are cylindrical and the contoured portion of at least one of the first surface and the second surface extends within an inner diameter of the faceplate.

[0020] In an additional feature, the backplate and the faceplate are cylindrical and the contoured portion of the second surface extends within an outer diameter of the faceplate.

[0021] In additional features, the backplate and the faceplate are cylindrical. The contoured portion of the first surface extends within an inner diameter of the faceplate. The contoured portion of the second surface extends within an outer diameter of the faceplate.

[0022] In additional features, the backplate and the faceplate are cylindrical. The faceplate includes a sidewall attached to the backplate. The backplate, the faceplate, and the sidewall define a plenum. The showerhead further comprises a stem attached to the backplate. The stem includes a gas inlet. A conduit extends from the gas inlet through the stem, the backplate, and the faceplate to the plenum. The gas inlet, the plenum, and the through-holes are in fluid communication with each other.

[0023] In additional features, the system includes a showerhead, a pedestal for supporting the substrate, an actuator for moving the pedestal relative to the showerhead, and a controller for controlling the actuator.

[0024] In additional features, the system includes a showerhead, a gas source that provides gas to the inlet, a pedestal that supports the substrate, a radio frequency source that provides radio frequency power to activate the gas, and an actuator that moves the pedestal relative to the showerhead. The system includes a controller that controls the gas source, the radio frequency source, and the actuator.

[0025] Other areas of applicability of the present disclosure will become apparent from the detailed description, the claims, and the drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief description of the drawings]

[0026] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0027] [Figure 1] FIG. 1 illustrates an example of a substrate processing system that includes a processing chamber.

[0028] [Diagram 2] FIG. 2 shows a cross-sectional view of an example showerhead.

[0029] [Diagram 3] FIG. 3 is a cross-sectional view of an example showerhead including a faceplate with inner contouring (i.e., contouring of the side of the faceplate that faces away from the substrate).

[0030] [Figure 4] FIG. 4 is a cross-sectional view of an example showerhead including a faceplate with outer contouring (i.e., contouring of the side of the faceplate that faces the substrate). [Diagram 5] FIG. 5 is a cross-sectional view of an example showerhead including a faceplate with outer contouring (i.e., contouring of the side of the faceplate that faces the substrate). [Figure 6] FIG. 6 is a cross-sectional view of an example showerhead including a faceplate with outer contouring (i.e., contouring of the side of the faceplate that faces the substrate).

[0031] [Figure 7] FIG. 7 is a cross-sectional view of an example showerhead including a faceplate with inner and outer contouring (i.e., contouring on both the side of the faceplate that faces away from the substrate and the side that faces the substrate). [Figure 8] FIG. 8 is a cross-sectional view of an example showerhead including a faceplate with inner and outer contouring (i.e., contouring on both the side of the faceplate that faces away from the substrate and the side that faces the substrate). [Figure 9] FIG. 9 is a cross-sectional view of an example showerhead including a faceplate with inner and outer contouring (i.e., contouring on both the side of the faceplate that faces away from the substrate and the side that faces the substrate). [Figure 10]FIG. 10 is a cross-sectional view of an example showerhead including a faceplate with inner and outer contouring (i.e., contouring on both the side of the faceplate that faces away from the substrate and the side that faces the substrate).

[0032] In the drawings, reference numbers may be reused to refer to similar and / or identical elements. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] In a substrate processing system (see example in FIG. 1), a film may be deposited on a substrate disposed on a pedestal by supplying one or more process gases from a showerhead. Some deposition processes also use plasma during deposition. Many factors affect the properties (i.e., thickness profile) of the film deposited on the substrate. Non-limiting examples of factors that affect the film properties include the size, density, and distribution of through-holes in the faceplate of the showerhead, the shape of the faceplate, and the distance between the faceplate and the substrate.

[0034] Some applications require a radially uniform (flat) thickness profile for the film deposited on the substrate, while other applications require a radially varying profile rather than a radially uniform one. Many techniques are used to vary the film properties. For example, the film profile can be adjusted by controlling parameters such as the flow rate of process gases through the showerhead, the plasma density distribution, etc. However, these techniques tend to be inappropriate and produce undesirable side effects.

[0035] The present disclosure provides faceplates of various shapes to adjust the properties of the film deposited on the substrate. Specifically, as described in detail below, the faceplate may be contoured on the inside (i.e., the side facing away from the substrate), the outside (i.e., the side facing the substrate), or a combination thereof. As used herein, contouring a surface means forming a surface as described in the present disclosure. For example, a contoured surface is a surface having a shape, outline, or profile as described herein. For example, a contoured surface includes a curved surface, a sloped surface, or a surface that includes a curved portion, a sloped portion, a flat surface, or any combination thereof. Contouring the faceplate varies the height (or depth) of the through-holes in the faceplate along the radius of the showerhead. The variation in the depth of the through-holes along the radius varies the resistance to the flow of process gases across the radius of the showerhead. The variation in the resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate.

[0036] Specifically, the inner contouring of the faceplate can adjust the radial profile of the film by adjusting the pressure distribution of the process gas radially. The outer contouring of the faceplate can adjust the radial profile of the film by adjusting the pressure distribution of the process gas radially and adjusting the plasma density radially. For example, in addition to using inner contoured and / or outer contoured faceplates, the film properties can be further adjusted by adjusting the distance between the faceplate and the substrate (i.e., the gap between the showerhead and the pedestal). The outer contouring of the faceplate can also affect other properties such as the stress on the substrate. These and other features of the present disclosure are described in more detail below.

[0037] Substrate Processing Systems: 1 illustrates an example of a substrate processing system 100. The substrate processing system 100 includes a process chamber 102, a gas distribution system 104, a manifold 106, a radio frequency (RF) source 108, a valve 110, a pump 112, and a controller 114. The process chamber 102 includes a pedestal 120 and a showerhead 122 disposed above the pedestal 120. A substrate 124 is disposed on the pedestal 120 during processing.

[0038] The pedestal 120 includes one or more heaters, indicated generally at 126. Although not shown, the pedestal 120 may also include cooling channels through which a coolant can be circulated. The pedestal 120 also includes one or more temperature sensors, indicated generally at 128. The heaters 126 and cooling channels control the temperature of the substrate 124 during processing.

[0039] The showerhead 122 includes a base 130 and a stem portion 132. The base 130 is generally cylindrical and includes a backplate and a faceplate (shown and described in detail below with reference to FIGS. 2-10 ). The stem portion 132 extends from the center of the base 130 and is attached to the top of the processing chamber 102. The showerhead 130 may also include heater and cooling channels (neither shown). The showerhead 130 also includes one or more temperature sensors, shown generally at 134.

[0040] The gas distribution system 104 includes multiple gas sources 140, multiple valves 142, and multiple mass flow controllers (MFCs) 144. The gas sources 140 supply process gases to the manifold 106 through the valves 142 and the MFCs 144. The gas distribution system 104 also supplies one or more vaporized precursors 146 to the manifold 106 through one or more valves 148. The manifold 106 supplies one or more process gases and / or one or more vaporized precursors to the showerhead 130 through a stem portion 132 of the showerhead 130. The showerhead 130 supplies gases into the process chamber 102 through through-holes in a faceplate of the showerhead. The through-holes are illustrated in FIGS. 2-10.

[0041] The RF source 108 includes an RF generator 150 and a matching network 152. The RF generator generates RF power. The matching network 152 provides RF power to the showerhead 130 while the pedestal 120 is grounded. Alternatively, RF power can be provided to the pedestal 120 and the showerhead 130 can be grounded. The RF power activates the process gases and / or precursors to generate a plasma 154.

[0042] An actuator 116 moves the pedestal 120 up and down to adjust the gap between the pedestal 120 and the showerhead 130 during processing. Alternatively, or in addition, one or more actuators, not shown, can be used to move the showerhead 130 relative to the pedestal 120. Valves 110 and pumps 112 maintain pressure within the processing chamber 102 as well as evacuate gases from the processing chamber 102. A controller 114 controls all of the elements (i.e., components) of the substrate processing system 100 described above. Shower head

[0043] 2 illustrates a cross-sectional view of a showerhead 200 that can be used in the substrate processing system 100 shown in FIG. The showerhead 200 includes a base 202 and a stem portion 204 extending from the base 202. The stem portion 204 includes an inlet 206 for receiving process gases. The base 202 includes a backplate 210 and a faceplate 212. The backplate 210 is generally cylindrical. The faceplate 212 is attached to an outer diameter (OD) of the backplate 210, as described in more detail below. The stem portion 204 extends from a center of the backplate 210.

[0044] The faceplate 212 is generally C-shaped and also cylindrical. Specifically, the faceplate 212 includes a cylindrical base 220 and a sidewall 222. The sidewall 222 extends from the cylindrical base 220. The sidewall 222 extends toward and is attached to the backplate 210. Specifically, the sidewall 222 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 223 of the sidewall 222. The bottom surface 211 of the backplate 210 is parallel to the cylindrical base 220 and a surface on which the backplate 210 rests.

[0045] The backplate 210 and the faceplate 212 define a plenum 230. Specifically, the bottom surface 211 of the backplate 210, the top surface 221 of the tubular base 220, and the inner surface 223 of the sidewall 222 define the plenum 230. A conduit 205 extends from the inlet 206 through the stem portion 204 and the backplate 210. The conduit 205 is in fluid communication with the plenum 230. The plenum 230 is in fluid communication with the inlet 206. Although not described with reference to Figures 3-10, the conduit 205 is illustrated in Figures 3-10 and similarly connects the inlet 206 to each plenum illustrated in Figures 3-10.

[0046] The cylindrical base 220 includes a plurality of through holes 232-1, 232-2, 232-3, ..., and 232-N (collectively, through holes 232). The through holes 232 extend from a bottom of the face plate 212 to a top of the face plate 212. Specifically, the through holes 232 extend from a bottom of the cylindrical base 220 to a top of the cylindrical base 220. More specifically, the through holes 232 extend from a bottom surface 234 of the cylindrical base 220 to a top surface 221 of the cylindrical base 220. The bottom surface 234 faces the substrate, and the top surface 221 faces a position away from the substrate.

[0047] The following description of the top surface 221 and bottom surface 234 of the cylindrical base 220 applies to the top and bottom surfaces of the cylindrical bases of all showerheads shown and described below with reference to Figures 3-10. The top surface 221 of the cylindrical base 220 faces the bottom surface 211 of the backplate 210 and is parallel to the bottom surface 211 of the backplate 210. Thus, the top surface 221 of the cylindrical base 220 faces away from the substrate. The top surface 221 may be referred to as the inner surface 221 of the cylindrical base 220, and the bottom surface 234 may be referred to as the outer surface 234 of the cylindrical base 220. Generally, the top surface 221 may be referred to as the first surface of the cylindrical base 220, and the bottom surface 234 may be referred to as the second surface of the cylindrical base 220. The alternative terminology for the top and bottom surfaces of the cylindrical base, and the spatial relationship of the top and bottom surfaces of the cylindrical base to the backplate 210 and the substrate, apply to the top and bottom surfaces of the cylindrical base of all showerheads described below with reference to Figures 3-10.

[0048] The through-holes 232 extend vertically through the tubular base 220 along an axis perpendicular to the surface on which the tubular base 220 and backplate 210 rest. The through-holes 232 are distributed from the center of the tubular base 220 to the inner diameter (ID) of the sidewall 222. The through-holes 232 are in fluid communication with the plenum 230 and the inlet 206. Gas received from the inlet 206 flows through the plenum 230 and through the through-holes 232 into the processing chamber.

[0049] The following description of the through holes 232 applies to all the through holes shown and described below with reference to FIGS. 3-10. For convenience of illustration, only a few of the through holes 232 are shown, but the number of the through holes 232 may be on the order of several thousand. In some applications, the through holes 232 may be arranged in different patterns, not shown. For example, the through holes 232 may be arranged in a square pattern, a hexagonal (honeycomb) pattern, etc. In some applications, the through holes 232 may be arranged in different regions or zones of different shapes distributed throughout the tubular base 220. In some applications, the diameter of the through holes 232 may vary and the density of the through holes 232 may vary across the zones. In some applications, the through holes 232 may not be vertical. Additionally, the height of the through holes 232 may be varied by contouring the tubular base 220, as described below with reference to FIGS. 3-10. In some applications, any combination of these arrangements of the through holes 232 may be used.

[0050] 3-10 show showerheads including various configurations of faceplates according to the present disclosure. The showerheads shown in FIGS. 3-10 can be used in the substrate processing system 100 shown in FIG. 1. The faceplates of the showerheads shown in FIGS. 3-10 are different from the faceplate 212, as shown and described below. FIG. 3 shows an example of a faceplate with inner contouring. FIGS. 4-6 show an example of a faceplate with outer contouring. FIGS. 7-10 show an example of a faceplate with inner and outer contouring. It should be noted that the shape of the contoured portion of either or both of the top and bottom surfaces of the cylindrical base can vary depending on the process requirements. The contouring shown in FIGS. 3-10 is merely exemplary and non-limiting. Faceplate with inner contouring

[0051] FIG. 3 illustrates a showerhead 300 including a faceplate according to the present disclosure. The faceplate includes inner contouring as described in detail below. The showerhead 300 includes a base 302 and a stem portion 204. The base 302 includes a backplate 210 and a faceplate 312. The faceplate 312 is generally C-shaped and also cylindrical. Specifically, the faceplate 312 includes a cylindrical base 320 and a sidewall 322. The sidewall 322 extends from the cylindrical base 320. The sidewall 322 extends toward and is attached to the backplate 210. Specifically, the sidewall 322 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 323 of the sidewall 322.

[0052] The backplate 210 and the faceplate 312 define a plenum 330. Specifically, the bottom surface 211 of the backplate 210, the top surface 321 of the tubular base 320, and the inner surface 323 of the sidewall 322 define the plenum 330. The plenum 330 is in fluid communication with the inlet 206.

[0053] The top surface 321 of the tubular base 320, which faces away from the substrate, is not flat. Instead, the top surface 321 of the tubular base 320 is contoured. For example, the top surface 321 of the tubular base 320 is generally concave. Specifically, a first portion 350 of the top surface 321 extends radially inward from the ID of the sidewall 322 a first distance. The first portion 350 extends perpendicularly from the inner surface 323 of the sidewall 322 a first distance. The first portion 350 extends parallel to the bottom surface 334 of the tubular base 320 and parallel to the bottom surface 211 of the backplate 210 a first distance.

[0054] A second portion 352 of the top surface 321 extends radially inward from the first portion 350 a second distance and tapers toward the bottom surface 334 of the tubular base 320. The second portion 352 tapers toward the center of the tubular base 320 a second distance. A third portion 354 of the top surface 321 extends a third distance from the second portion 352 to the center of the tubular base 320. The third portion 354 extends parallel to the bottom surface 334 of the tubular base 320 a third distance. The bottom surface 334 of the tubular base 320 that faces the substrate is perpendicular to the inner surface 323 of the sidewall 322 and parallel to the bottom surface 211 of the backplate 210. Thus, the third portion 354 of the top surface 321 also extends perpendicular to the inner surface 323 of the sidewall 322 a third distance and is parallel to the bottom surface 211 of the backplate 210 .

[0055] Because the top surface 321 of the tubular base 320 is also the inner surface of the faceplate 312, the formation of the generally concave top surface 321 described above is also referred to as an inner contouring of the faceplate 312. It should be noted that the contouring of the top surface 321 may begin at any radial location on the top surface 321 of the tubular base 320. Similarly, the contouring of the top surface 321 may end at any radial location on the top surface 321 of the tubular base 320. For example, the first, second, and third distances can vary. Furthermore, the slope of the contoured portion of the top surface 321 may be linear or polynomial.

[0056] The cylindrical base 320 includes a plurality of through holes 332-1, 332-2, 332-3, ..., and 332-N (collectively, through holes 332). The through holes 332 extend from a bottom of the face plate 312 to a top of the face plate 312. Specifically, the through holes 332 extend from a bottom of the cylindrical base 320 to a top of the cylindrical base 320. More specifically, the through holes 332 extend from a bottom surface 334 of the cylindrical base 320 to a top surface 321 of the cylindrical base 320. The bottom surface 334 faces the substrate, and the top surface 321 faces away from the substrate. The bottom surface 334 may be referred to as the outer surface 334 of the cylindrical base 320, and the top surface 321 may be referred to as the inner surface 321 of the cylindrical base 320.

[0057] The through-holes 332 extend vertically through the tubular base 320 along an axis perpendicular to the surface on which the tubular base 320 and backplate 210 rest. The through-holes 332 are distributed from the center of the tubular base 320 to the inner diameter (ID) of the sidewall 322. The through-holes 332 are in fluid communication with the plenum 330 and the inlet 206. Gas received from the inlet 206 flows through the plenum 330 and through the through-holes 332 into the processing chamber.

[0058] Contouring the top surface 321 of the cylindrical base 320 causes the height (or depth) of the through-holes 332 in the cylindrical base 320 to vary from the ID of the sidewall 322 to the center of the cylindrical base 320, as shown. Varying the height of the through-holes 332 varies the resistance to the flow of process gases across the radius of the showerhead 300. Varying the resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate. Additionally, as discussed above with reference to FIG. 1, the gap between the showerhead 300 and the substrate can be varied. Varying the gap changes the plasma density between the showerhead 300 and the substrate, which further varies the film profile of the film deposited on the substrate.

[0059] Specifically, the contouring of the top surface 321 of the tubular base 320 divides the tubular base 320 into a number of concentric radial zones. In the illustrated example, the tubular base 320 is divided into first, second, and third concentric radial zones, denoted as Z1, Z2, and Z3, respectively. The first zone Z1 of the tubular base 320 extends radially inwardly from the ID of the sidewall 322 toward the center of the tubular base 320 by a first distance. The OD of the first zone Z1 is the same as the ID of the sidewall 322. The second zone Z2 of the tubular base 320 extends radially inwardly from the ID of the first zone Z1 by a second distance toward the center of the tubular base 320. The OD of the second zone Z2 is the same as the ID of the first zone Z1. A third zone Z3 of the tubular base 320 extends radially inward a third distance from the ID of the second zone Z2 to the center of the tubular base 320. The OD of the third zone Z3 is the same as the ID of the second zone Z2.

[0060] The width of the first zone Z1 (i.e., the difference between the OD and ID of the first zone Z1) is equal to a first distance. The width of the second zone Z2 (i.e., the difference between the OD and ID of the second zone Z2) is equal to a second distance. The width of the third zone Z3 (i.e., the distance between the OD of the third zone Z3 and the center of the tubular base 320) is equal to a third distance. The heights of the through holes 332 in the first, second, and third radial zones, denoted as Z1, Z2, and Z3 of the tubular base 320, vary as follows:

[0061] Due to the contouring of the top surface 321 of the cylindrical base 320, the height of the through-holes 332 in the first zone Z1, which is the outermost zone closest to the ID of the sidewall 322, is greater than the height of the through-holes 332 in the second zone Z2 and the third zone Z3. The height of the through-holes 332 in the third zone Z3, which is the innermost zone closest to the center of the cylindrical base 320, is less than the height of the through-holes 332 in the first zone Z1 and the second zone Z2. Thus, the through-holes 332 in the third zone Z3, which is the innermost zone of the cylindrical base 320, provide the least resistance to the flow of the process gas, and the through-holes 332 in the first zone Z1, which is the outermost zone of the cylindrical base 320, provide the most resistance to the flow of the process gas. The height of the through-holes 332 in the second zone 2 is greater than the height of the through-holes 332 in the third zone Z3 and less than the height of the through-holes 332 in the first zone Z1. Thus, the through-holes 332 in the second zone Z2 present a greater resistance to the flow of process gas than the through-holes 332 in the third zone Z3 and a lesser resistance than the through-holes 332 in the first zone Z1.

[0062] Specifically, the height of the through-holes 332 in the second zone Z2 varies across the contoured portion in the second zone Z2, so that the through-holes 332 in the second zone Z2 provide varying resistance to the flow of process gas. More specifically, the height of the through-holes 332 in the second zone Z2 gradually decreases from the OD of the second zone Z2 toward the center of the cylindrical base 320 (i.e., toward the ID of the second zone Z2). Thus, the through-holes 332 in the second zone Z2 provide gradually decreasing resistance to the flow of process gas from the OD of the second zone Z2 toward the center of the cylindrical base 320 (i.e., toward the ID of the second zone Z2). The through-holes 332 in the outermost first zone Z1 provide the greatest resistance to the flow of process gas. Thus, the film profile of the substrate processed using the showerhead 300 is different from the film profile of the substrate processed using the showerhead 200.

[0063] 1, the gap between the showerhead 300 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 400, and the substrate, which further changes the film profile of the film deposited on the substrate. Thus, the film profile of a substrate processed using showerhead 300 will be different than the film profile of a substrate processed using showerhead 200.

[0064] Faceplate with outer contouring: 4 illustrates a showerhead 400 including a faceplate according to the present disclosure. The faceplate includes an exterior contouring as described in detail below. The showerhead 400 includes a base 402 and a stem portion 204. The base 402 includes a backplate 210 and a faceplate 412. The faceplate 412 is generally C-shaped and also cylindrical. Specifically, the faceplate 412 includes a cylindrical base 420 and a sidewall 422. The sidewall 422 extends from the cylindrical base 420. The sidewall 422 extends toward and is attached to the backplate 210. Specifically, the sidewall 422 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 423 of the sidewall 422.

[0065] The backplate 210 and the faceplate 412 define a plenum 430. Specifically, the bottom surface 211 of the backplate 210, the top surface 421 of the tubular base 420, and the inner surface 423 of the sidewall 422 define the plenum 430. The plenum 430 is in fluid communication with the inlet 206.

[0066] The top surface 421 of the cylindrical base 420, which faces away from the substrate, is flat. The top surface 421 of the cylindrical base 420 is perpendicular to the inner surface 423 of the sidewall 422. The top surface 421 of the cylindrical base 420 is parallel to the bottom surface 211 of the backplate 210. The bottom surface 434 of the cylindrical base 420 is not flat. Instead, the bottom surface 434 of the cylindrical base 420 is contoured.

[0067] Specifically, the first portion 450 of the bottom surface 434 extends radially inward from the OD of the sidewall 422 a first distance. The first portion 450 extends perpendicularly from the sidewall 422 a first distance. The first portion 450 extends parallel to the top surface 421 of the tubular base 420 and parallel to the bottom surface 211 of the backplate 210 a first distance.

[0068] A second portion 452 of the bottom surface 434 extends radially inward from the first portion 450 a second distance. The second portion 452 tapers toward the center of the tubular base 420 in a direction away from the top surface 421 a second distance. A third portion 454 of the bottom surface 434 extends a third distance from the second portion 452 to the center of the tubular base 420. The third portion 454 extends parallel to the top surface 421 of the tubular base 420 a third distance. The top surface 421 of the tubular base 420, which faces away from the substrate, is perpendicular to the inner surface 423 of the sidewall 422 and parallel to the bottom surface 211 of the backplate 210. Thus, the third portion 454 of the bottom surface 434 also extends perpendicular to the inner surface 423 of the sidewall 422 a third distance and is parallel to the bottom surface 211 of the backplate 210 .

[0069] Because the bottom surface 434 of the cylindrical base 420 is also the outer surface of the faceplate 412, the formation of the generally convex bottom surface 434 described above is also referred to as the outer contouring of the faceplate 412. It should be noted that the contouring of the bottom surface 434 may begin at any radial location on the bottom surface 434 of the cylindrical base 420. Similarly, the contouring of the bottom surface 434 may end at any radial location on the bottom surface 434 of the cylindrical base 420. For example, the first, second, and third distances can vary. Furthermore, the slope of the contoured portion of the bottom surface 434 may be linear or polynomial.

[0070] The cylindrical base 420 includes a plurality of through holes 432-1, 432-2, 432-3, ..., and 432-N (collectively, through holes 432). The through holes 432 extend from a bottom of the face plate 412 to a top of the face plate 412. Specifically, the through holes 432 extend from a bottom of the cylindrical base 420 to a top of the cylindrical base 420. More specifically, the through holes 432 extend from a bottom surface 434 of the cylindrical base 420 to a top surface 421 of the cylindrical base 420. The bottom surface 434 faces the substrate, and the top surface 421 faces away from the substrate. The bottom surface 434 may be referred to as the outer surface 434 of the cylindrical base 420, and the top surface 421 may be referred to as the inner surface 421 of the cylindrical base 420.

[0071] The through holes 432 extend vertically through the tubular base 420 along an axis perpendicular to the surface on which the tubular base 420 and the backplate 210 rest. The through holes 432 are distributed from the center of the tubular base 420 to the ID of the sidewall 422. The through holes 432 are in fluid communication with the plenum 430 and the inlet 206. Gas received from the inlet 206 flows through the plenum 430 and through the through holes 432 into the processing chamber.

[0072] The contouring of the bottom surface 434 of the cylindrical base 420 causes the height (or depth) of the through-holes 432 in the cylindrical base 420 to vary from the ID of the sidewall 422 to the center of the cylindrical base 420, as shown. The variation in the height of the through-holes 432 varies the resistance to the flow of process gases across the radius of the showerhead 400. The variation in the resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate.

[0073] In addition, contouring the bottom surface 434 of the cylindrical base 420 also varies the direction in which the process gas exits the through-holes 432, which further changes the film profile of the film deposited on the substrate. Furthermore, as described above with reference to Figure 1, the gap between the showerhead 400 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 400, and the substrate, which further changes the film profile of the film deposited on the substrate.

[0074] Specifically, the contouring of the bottom surface 434 of the cylindrical base 420 divides the cylindrical base 420 into a number of concentric radial zones. In the illustrated example, the cylindrical base 420 is divided into first, second, and third concentric radial zones, designated as Z1, Z2, and Z3, respectively. The first zone Z1 of the cylindrical base 420 extends radially inwardly from the OD of the sidewall 422 toward the center of the cylindrical base 420 by a first distance. The OD of the first zone Z1 is the same as the ID of the sidewall 422. The second zone Z2 of the cylindrical base 420 extends radially inwardly from the ID of the first zone Z1 by a second distance toward the center of the cylindrical base 420. The OD of the second zone Z2 is the same as the ID of the first zone Z1. A third zone Z3 of the tubular base 420 extends radially inward a third distance from the ID of the second zone Z2 to the center of the tubular base 420. The OD of the third zone Z3 is the same as the ID of the second zone Z2.

[0075] The width of the first zone Z1 (i.e., the difference between the OD and ID of the first zone Z1) is equal to a first distance. The width of the second zone Z2 (i.e., the difference between the OD and ID of the second zone Z2) is equal to a second distance. The width of the third zone Z3 (i.e., the distance between the OD of the third zone Z3 and the center of the tubular base 420) is equal to a third distance. The heights of the through holes 432 in the first, second, and third radial zones, denoted as Z1, Z2, and Z3 of the tubular base 420, vary as follows:

[0076] Due to the contouring of the bottom surface 434 of the cylindrical base 420, the height of the through-holes 432 in the first zone Z1, which is the outermost zone closest to the ID of the sidewall 422, is smaller than the height of the through-holes 432 in the second zone Z2 and the third zone Z3. The height of the through-holes 432 in the third zone Z3, which is the innermost zone closest to the center of the cylindrical base 420, is larger than the height of the through-holes 432 in the first zone Z1 and the second zone Z2. Thus, the through-holes 432 in the first zone Z1, which is the outermost zone, provide the least resistance to the flow of the process gas, and the through-holes 432 in the third zone Z3, which is the innermost zone, provide the most resistance to the flow of the process gas. The height of the through-holes 432 in the second zone 2 is larger than the height of the through-holes 432 in the first zone Z1 and smaller than the height of the through-holes 432 in the third zone Z3. Thus, the through-holes 432 in the second zone Z2 provide a greater resistance to the flow of process gas than the through-holes 432 in the first zone Z1 and a lesser resistance than the through-holes 432 in the third zone Z3.

[0077] Specifically, the height of the through-holes 432 in the second zone Z2 varies across the contoured portion in the second zone Z2, so that the through-holes 432 in the second zone Z2 provide varying resistance to the flow of process gas. More specifically, the height of the through-holes 432 in the second zone Z2 gradually increases from the OD of the second zone Z2 toward the center of the cylindrical base 420 (i.e., toward the ID of the second zone Z2). Thus, the through-holes 432 in the second zone Z2 provide gradually increasing resistance to the flow of process gas from the OD of the second zone Z2 toward the center of the cylindrical base 420 (i.e., toward the ID of the second zone Z2). The through-holes 432 in the innermost third zone Z3 provide the greatest resistance to the flow of process gas.

[0078] Furthermore, due to the contouring, the process gas exits through the through-holes 432 in the second zone Z2 in a different direction than the through-holes 432 in the first zone Z1 and the third zone Z3. Furthermore, the distance between the through-holes 432 and the substrate in different zones is also different. Thus, the film profile of the substrate processed using showerhead 400 is different from the film profile of the substrate processed using showerheads 200 and 300.

[0079] FIG. 5 illustrates a showerhead 500 including a faceplate according to the present disclosure. The faceplate includes exterior contouring as described in detail below. The showerhead 500 includes a base 502 and a stem portion 204. The base 502 includes a backplate 210 and a faceplate 512. The faceplate 512 is generally C-shaped and also cylindrical. Specifically, the faceplate 512 includes a cylindrical base 520 and a sidewall 522. The sidewall 522 extends from the cylindrical base 520. The sidewall 522 extends toward and is attached to the backplate 210. Specifically, the sidewall 522 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 523 of the sidewall 522.

[0080] The backplate 210 and the faceplate 512 define a plenum 530. Specifically, the bottom surface 211 of the backplate 210, the top surface 521 of the tubular base 520, and the inner surface 523 of the sidewall 522 define the plenum 530. The plenum 530 is in fluid communication with the inlet 206.

[0081] The top surface 521 of the cylindrical base 520, which faces away from the substrate, is flat. The top surface 521 of the cylindrical base 520 is perpendicular to the inner surface 523 of the sidewall 522. The top surface 521 of the cylindrical base 520 is parallel to the bottom surface 211 of the backplate 210. The bottom surface 534 of the cylindrical base 520 is not flat. Instead, the bottom surface 534 of the cylindrical base 520 is contoured.

[0082] Specifically, a first portion 550 of the bottom surface 534 extends radially inward from the OD of the sidewall 522 a first distance. The first portion 550 extends perpendicularly from the sidewall 522 a first distance and is parallel to the bottom surface 211 of the backplate 210. And, a second portion 552 of the bottom surface 534 extends from the first portion 550 a second distance. The second portion 552 tapers radially inward toward the top surface 521 a second distance. The second portion 552 tapers toward the center of the tubular base 520 a second distance.

[0083] And, a third portion 554 of the bottom surface 534 extends a third distance from the second portion 552. The third portion 554 extends radially inwardly toward the center of the tubular base 520 a third distance. The third portion 554 extends a third distance perpendicular to the sidewall 522 and is parallel to the bottom surface 211 of the backplate 210. The third portion 554 is parallel to the first portion 550.

[0084] A fourth portion 556 of the bottom surface 534 extends from the third portion 554 by a fourth distance. The fourth portion 556 tapers toward the center of the tubular base 520 in a direction away from the top surface 521 by a fourth distance. A fifth portion 558 of the bottom surface 534 extends from the fourth portion 556 by a fifth distance. The fifth portion 558 extends from the fourth portion 556 to the center of the tubular base 520 by a fifth distance. The fifth portion 558 extends parallel to the top surface 521 of the tubular base 520 and is parallel to the bottom surface 211 of the backplate 210 by a fifth distance. The top surface 521 of the tubular base 520 facing away from the substrate is perpendicular to the inner surface 523 of the sidewall 522 and is parallel to the bottom surface 211 of the backplate 210. Thus, the fifth portion 558 of the bottom surface 534 also extends a fifth distance perpendicular to the inner surface 523 of the side wall 522 and is parallel to the bottom surface 211 of the backplate 210. The fifth portion 558 is parallel to the third portion 554 and the first portion 550.

[0085] Because the bottom surface 534 of the cylindrical base 520 is also the outer surface of the faceplate 512, the formation of the generally convex bottom surface 534 described above is also referred to as the outer contouring of the faceplate 512. It should be noted that the contouring of the bottom surface 534 may begin at any radial location on the bottom surface 534 of the cylindrical base 520. Similarly, the contouring of the bottom surface 534 may end at any radial location on the bottom surface 534 of the cylindrical base 520. For example, the first, second, third, fourth, and fifth distances can vary. Furthermore, the slope of the contoured portion of the bottom surface 534 may be linear or polynomial.

[0086] The cylindrical base 520 includes a plurality of through holes 532-1, 532-2, 532-3, ..., and 532-N (collectively, through holes 532). The through holes 532 extend from a bottom of the face plate 512 to a top of the face plate 512. Specifically, the through holes 532 extend from a bottom of the cylindrical base 520 to a top of the cylindrical base 520. More specifically, the through holes 532 extend from a bottom surface 534 of the cylindrical base 520 to a top surface 521 of the cylindrical base 520. The bottom surface 534 faces the substrate, and the top surface 521 faces away from the substrate. The bottom surface 534 may be referred to as the outer surface 534 of the cylindrical base 520, and the top surface 521 may be referred to as the inner surface 521 of the cylindrical base 520.

[0087] The through holes 532 extend vertically through the tubular base 520 along an axis perpendicular to the surface on which the tubular base 520 and the backplate 210 rest. The through holes 532 are distributed from the center of the tubular base 520 to the ID of the sidewall 522. The through holes 532 are in fluid communication with the plenum 530 and the inlet 206. Gas received from the inlet 206 flows through the plenum 530 and through the through holes 532 into the processing chamber.

[0088] The contouring of the bottom surface 534 of the cylindrical base 520 causes the height (or depth) of the through-holes 532 in the cylindrical base 520 to vary from the ID of the sidewall 522 to the center of the cylindrical base 520, as shown. The variation in the height of the through-holes 532 varies the resistance to the flow of process gases across the radius of the showerhead 500. The variation in resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate.

[0089] In addition, the contouring of the bottom surface 534 of the cylindrical base 520 also varies the direction in which the process gas exits the through-holes 532, which further changes the film profile of the film deposited on the substrate. Furthermore, as described above with reference to Figure 1, the gap between the showerhead 500 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 500, and the substrate, which further changes the film profile of the film deposited on the substrate.

[0090] Specifically, the contouring of the bottom surface 534 of the cylindrical base 520 divides the cylindrical base 520 into a number of concentric radial zones. In the illustrated example, the cylindrical base 520 is divided into first, second, third, fourth, and fifth concentric radial zones, designated as Z1, Z2, Z3, Z4, and Z5, respectively. The first zone Z1 of the cylindrical base 520 extends radially inward from the OD of the sidewall 522 toward the center of the cylindrical base 520 a first distance. The OD of the first zone Z1 is the same as the OD of the sidewall 522. In the illustrated example, the first zone Z1 does not include any through holes 532.

[0091] A second zone Z2 of the tubular base 520 extends radially inward a second distance from the ID of the first zone Z1 toward the center of the tubular base 520. The OD of the second zone Z2 is the same as the ID of the first zone Z1. A third zone Z3 of the tubular base 520 extends radially inward a third distance from the ID of the second zone Z2 toward the center of the tubular base 520. The OD of the third zone Z3 is the same as the ID of the second zone Z2.

[0092] A fourth zone Z4 of the tubular base 520 extends radially inward a fourth distance from the ID of the third zone Z3 toward the center of the tubular base 520. The OD of the fourth zone Z4 is the same as the ID of the third zone Z3. A fifth zone Z5 of the tubular base 520 extends radially inward a fifth distance from the ID of the fourth zone Z4 to the center of the tubular base 520. The OD of the fifth zone Z5 is the same as the ID of the fourth zone Z4.

[0093] The width of the first zone Z1 (i.e., the difference between the OD and ID of the first zone Z1) is equal to the first distance. The width of the second zone Z2 (i.e., the difference between the OD and ID of the second zone Z2) is equal to the second distance. The width of the third zone Z3 (i.e., the difference between the OD and ID of the third zone Z3) is equal to the third distance. The width of the fourth zone Z4 (i.e., the difference between the OD and ID of the fourth zone Z4) is equal to the fourth distance. The width of the fifth zone Z5 (i.e., the distance between the OD of the fifth zone Z5 and the center of the tubular base 520) is equal to the fifth distance. The heights of the through holes 532 in the first, second, and third radial zones, denoted as Z1, Z2, and Z3, of the tubular base 520 vary as follows:

[0094] Due to the contouring of the bottom surface 534 of the cylindrical base 520, the height of the through-holes 532 in the outermost second zone Z2 varies, and therefore provides a varying resistance to the flow of process gas. Specifically, the height of the through-holes 532 in the second zone Z2 gradually decreases from the OD of the second zone Z2 to the ID of the second zone Z2 (i.e., toward the center of the cylindrical base 520). Thus, the through-holes 532 in the second zone Z2 provide a gradually decreasing resistance to the flow of process gas from the OD of the second zone Z2 to the ID of the second zone Z2 (i.e., toward the center of the cylindrical base 520).

[0095] The height of the through-holes 532 in the third zone Z3 is smaller than the height of the through-holes 532 in the second zone Z2, the fourth zone Z4, and the fifth zone Z5. Thus, the through-holes 532 in the third zone Z3 provide a smaller resistance to the flow of the process gas than the through-holes 532 in the second zone Z2, the fourth zone Z4, and the fifth zone Z5. In the illustrated example, the height of the through-holes 532 in the third zone Z3 is the smallest compared to the through-holes 532 in the second zone Z2, the fourth zone Z4, and the fifth zone Z5. Thus, the through-holes 532 in the third zone Z3 provide a smaller resistance to the flow of the process gas than the through-holes 532 in the second zone Z2, the fourth zone Z4, and the fifth zone Z5.

[0096] The height of the through-holes 532 in the fourth zone Z4 varies, and therefore provides a varying resistance to the flow of the process gas. Specifically, the height of the through-holes 532 in the fourth zone Z4 gradually increases from the OD of the fourth zone Z4 to the ID of the fourth zone Z4 (i.e., toward the center of the cylindrical base 520). Thus, the through-holes 532 in the fourth zone Z4 provide a gradually increasing resistance to the flow of the process gas from the OD of the fourth zone Z4 to the ID of the fourth zone Z4 (i.e., toward the center of the cylindrical base 520). The height of the through-holes 532 in the fourth zone Z4 is greater than the height of the through-holes 532 in the third zone Z3 and less than the height of the through-holes 532 in the fifth zone Z5. Thus, the through-holes 532 in the fourth zone Z4 provide a greater resistance to the flow of the process gas than the through-holes 532 in the third zone Z3 and less than the through-holes 532 in the fifth zone Z5.

[0097] The height of the through-holes 532 in the innermost fifth zone Z5 is the largest and therefore provides the most resistance to the flow of process gas. Furthermore, due to the contouring, the process gas exits through the through-holes 532 in the second zone Z2 and the fourth zone Z4 in a different direction than the through-holes 532 in the third zone Z3 and the fifth zone Z5. Furthermore, the distance between the through-holes 532 in the different zones and the substrate is also different. Thus, the film profile of the substrate processed using the showerhead 500 is different from the film profile of the substrate processed using the showerheads 200, 300, and 400.

[0098] FIG. 6 illustrates a showerhead 600 including a faceplate according to the present disclosure. The faceplate includes exterior contouring as described in detail below. The showerhead 600 includes a base 602 and a stem portion 204. The base 602 includes a backplate 210 and a faceplate 612. The faceplate 612 is generally C-shaped and also cylindrical. Specifically, the faceplate 612 includes a cylindrical base 620 and a sidewall 622. The sidewall 622 extends from the cylindrical base 620. The sidewall 622 extends toward and is attached to the backplate 210. Specifically, the sidewall 622 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 623 of the sidewall 622.

[0099] The backplate 210 and the faceplate 612 define a plenum 630. Specifically, the bottom surface 211 of the backplate 210, the top surface 621 of the tubular base 620, and the inner surface 623 of the sidewall 622 define the plenum 630. The plenum 630 is in fluid communication with the inlet 206.

[0100] The top surface 621 of the cylindrical base 620, which faces away from the substrate, is flat. The top surface 621 of the cylindrical base 620 is perpendicular to the inner surface 623 of the sidewall 622. The top surface 621 of the cylindrical base 620 is parallel to the bottom surface 211 of the backplate 210. The bottom surface 634 of the cylindrical base 620 is not flat. Instead, the bottom surface 634 of the cylindrical base 620 is contoured.

[0101] Specifically, the first portion 650 of the bottom surface 634 extends radially inward from the OD of the sidewall 622 a first distance. The first portion 650 extends perpendicularly from the sidewall 622 a first distance. The first portion 650 extends parallel to the top surface 621 of the tubular base 620 and parallel to the bottom surface 211 of the backplate 210 a first distance.

[0102] And, a second portion 652 of the bottom surface 634 extends radially inward from the first portion 650 a second distance. The second portion 652 tapers toward the top surface 621 of the tubular base 620 a second distance. The second portion 652 tapers toward the center of the tubular base 620 a second distance.

[0103] And, a third portion 654 of the bottom surface 434 extends a third distance from the second portion 652 to the center of the tubular base 620. The third portion 654 extends a third distance parallel to the top surface 621 of the tubular base 620. The top surface 621 of the tubular base 620, which faces away from the substrate, is perpendicular to the inner surface 623 of the sidewall 622 and parallel to the bottom surface 211 of the backplate 210. Thus, the third portion 654 of the bottom surface 634 also extends a third distance perpendicular to the inner surface 623 of the sidewall 622 and parallel to the bottom surface 211 of the backplate 210.

[0104] Because the bottom surface 634 of the cylindrical base 620 is also the outer surface of the faceplate 612, the formation of the generally concave bottom surface 634 described above is also referred to as an outer contouring of the faceplate 612. It should be noted that the contouring of the bottom surface 634 may begin at any radial location on the bottom surface 634 of the cylindrical base 620. Similarly, the contouring of the bottom surface 634 may end at any radial location on the bottom surface 634 of the cylindrical base 620. For example, the first, second, and third distances can vary. Furthermore, the slope of the contoured portion of the bottom surface 634 may be linear or polynomial.

[0105] The cylindrical base 620 includes a plurality of through holes 632-1, 632-2, 632-3, ..., and 632-N (collectively, through holes 632). The through holes 632 extend from a bottom of the face plate 612 to a top of the face plate 612. Specifically, the through holes 632 extend from a bottom of the cylindrical base 620 to a top of the cylindrical base 620. More specifically, the through holes 632 extend from a bottom surface 634 of the cylindrical base 620 to a top surface 621 of the cylindrical base 620. The bottom surface 634 faces the substrate, and the top surface 621 faces away from the substrate. The bottom surface 634 may be referred to as the outer surface 634 of the cylindrical base 620, and the top surface 621 may be referred to as the inner surface 621 of the cylindrical base 620.

[0106] The through holes 632 extend vertically through the tubular base 620 along an axis perpendicular to the surface on which the tubular base 620 and the backplate 210 rest. The through holes 632 are distributed from the center of the tubular base 620 to the ID of the sidewall 622. The through holes 632 are in fluid communication with the plenum 630 and the inlet 206. Gas received from the inlet 206 flows through the plenum 630 and through the through holes 632 into the processing chamber.

[0107] Contouring the bottom surface 634 of the cylindrical base 620 causes the height (or depth) of the through-holes 632 in the cylindrical base 620 to vary from the ID of the sidewall 622 to the center of the cylindrical base 620, as shown. The variation in the height of the through-holes 632 varies the resistance to the flow of process gases across the radius of the showerhead 600. The variation in resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate.

[0108] In addition, contouring the bottom surface 634 of the cylindrical base 620 also varies the direction in which the process gas exits the through-holes 632, which further changes the film profile of the film deposited on the substrate. Furthermore, as described above with reference to Figure 1, the gap between the showerhead 600 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 600, and the substrate, which further changes the film profile of the film deposited on the substrate.

[0109] Specifically, the contouring of the bottom surface 634 of the tubular base 620 divides the tubular base 620 into a number of concentric radial zones. In the illustrated example, the tubular base 620 is divided into first, second, and third concentric radial zones, designated as Z1, Z2, and Z3, respectively. The first zone Z1 of the tubular base 620 extends radially inwardly from the OD of the sidewall 622 toward the center of the tubular base 620 by a first distance. The OD of the first zone Z1 is the same as the ID of the sidewall 622. The second zone Z2 of the tubular base 620 extends radially inwardly from the ID of the first zone Z1 by a second distance toward the center of the tubular base 620. The OD of the second zone Z2 is the same as the ID of the first zone Z1. A third zone Z3 of the tubular base 620 extends radially inward a third distance from the ID of the second zone Z2 to the center of the tubular base 620. The OD of the third zone Z3 is the same as the ID of the second zone Z2.

[0110] The width of the first zone Z1 (i.e., the difference between the OD and ID of the first zone Z1) is equal to a first distance. The width of the second zone Z2 (i.e., the difference between the OD and ID of the second zone Z2) is equal to a second distance. The width of the third zone Z3 (i.e., the distance between the OD of the third zone Z3 and the center of the tubular base 620) is equal to a third distance. The heights of the through holes 632 in the first, second, and third radial zones, denoted as Z1, Z2, and Z3 of the tubular base 620, vary as follows:

[0111] Due to the contouring of the bottom surface 634 of the cylindrical base 620, the height of the through-holes 632 in the first zone Z1, which is the outermost zone closest to the ID of the sidewall 622, is greater than the height of the through-holes 632 in the second zone Z2 and the third zone Z3. The height of the through-holes 632 in the third zone Z3, which is the innermost zone closest to the center of the cylindrical base 620, is less than the height of the through-holes 632 in the first zone Z1 and the second zone Z2. Thus, the through-holes 632 in the first zone Z1, which is the outermost zone, provide the greatest resistance to the flow of the process gas, and the through-holes 632 in the third zone Z2, which is the innermost zone, provide the least resistance to the flow of the process gas. The height of the through-holes 632 in the second zone 2 is less than the height of the through-holes 632 in the first zone Z1 and greater than the height of the through-holes 632 in the third zone Z3. Thus, the through-holes 632 in the second zone Z2 provide less resistance to the flow of process gas than the through-holes 632 in the first zone Z1 and provide more resistance than the through-holes 632 in the third zone Z3.

[0112] Specifically, the height of the through-holes 632 in the second zone Z2 varies across the contoured portion in the second zone Z2, so that the through-holes 632 in the second zone Z2 provide varying resistance to the flow of process gas. Specifically, the height of the through-holes 632 in the second zone Z2 gradually decreases from the OD of the second zone Z2 toward the center of the cylindrical base 620 (i.e., toward the ID of the second zone Z2). Thus, the through-holes 632 in the second zone Z2 provide gradually decreasing resistance to the flow of process gas from the OD of the second zone Z2 toward the center of the cylindrical base 620 (i.e., toward the ID of the second zone Z2). The through-holes 632 in the innermost third zone Z3 provide the least resistance to the flow of process gas.

[0113] Furthermore, due to the contouring, the process gas exits the through-holes 632 in the second zone Z2 in a different direction than the through-holes 632 in the first zone Z1 and the third zone Z3. Furthermore, the distance between the through-holes 632 and the substrate in the different zones is also different. Thus, the film profile of a substrate processed using the showerhead 600 will be different than the film profile of a substrate processed using the showerhead illustrated in FIGS. Faceplate with inner and outer contouring

[0114] 7 illustrates a showerhead 700 including a faceplate according to the present disclosure. The faceplate includes both inner and outer contouring as described in detail below. The showerhead 700 includes a base 702 and a stem portion 204. The base 702 includes a backplate 210 and a faceplate 712. The faceplate 712 includes a combination of features of the faceplates 302 and 402 shown in FIGS. 3 and 4.

[0115] The faceplate 712 is generally C-shaped and also cylindrical. Specifically, the faceplate 712 includes a cylindrical base 720 and a sidewall 722. The sidewall 722 extends from the cylindrical base 720. The sidewall 722 extends toward and is attached to the backplate 210. Specifically, the sidewall 722 is attached to an OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to an inner surface 723 of the sidewall 722.

[0116] The backplate 210 and the faceplate 712 define a plenum 730. Specifically, the bottom surface 211 of the backplate 210, the top surface 721 of the tubular base 720, and the inner surface 723 of the sidewall 722 define the plenum 730. The plenum 730 is in fluid communication with the inlet 206.

[0117] Neither the top surface 721 of the tubular base 720, which faces away from the substrate, nor the bottom surface 734, which faces the substrate, is flat, but instead is contoured, e.g., the top surface 721 of the tubular base 720 is generally concave, and the bottom surface 734 of the tubular base 720 is generally convex.

[0118] Specifically, a first portion 750 of the top surface 721 extends radially inward from the ID of the sidewall 722 a first distance. The first portion 750 extends perpendicularly from the inner surface 723 of the sidewall 722 a first distance. The first portion 750 extends parallel to the bottom surface 211 of the backplate 210 a first distance. And, a second portion 752 of the top surface 721 extends radially inward from the first portion 750 a second distance and tapers toward the bottom surface 734 of the tubular base 720. The second portion 752 tapers toward the center of the tubular base 720 a second distance.

[0119] And, a third portion 754 of the top surface 721 extends a third distance from the second portion 752 to the center of the tubular base 720. The third portion 754 extends a third distance parallel to the bottom surface 211 of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 723 of the sidewall 722. Thus, the third portion 754 of the top surface 721 also extends a third distance perpendicular to the inner surface 723 of the sidewall 722.

[0120] Because the top surface 721 of the tubular base 720 is also the inner surface of the faceplate 712, the formation of the generally concave top surface 721 described above is also referred to as an inner contouring of the faceplate 712. It is noted that the contouring of the top surface 721 may begin at any radial location on the top surface 721 of the tubular base 720. Similarly, the contouring of the top surface 721 may end at any radial location on the top surface 721 of the tubular base 720. For example, the first, second, and third distances about the top surface 721 can vary. Additionally, the slope of the contoured portion of the top surface 721 may be linear or polynomial.

[0121] Additionally, a first portion 751 of the bottom surface 734 extends radially inward from the OD of the sidewall 722 a first distance. The first portion 751 extends perpendicularly from the sidewall 722 a first distance. The first portion 751 extends parallel to the bottom surface 211 of the backplate 210 a first distance. And, a second portion 753 of the bottom surface 734 extends radially inward from the first portion 751 a second distance. The second portion 753 tapers toward the center of the tubular base 720 in a direction away from the top surface 721 a second distance.

[0122] And, a third portion 755 of the bottom surface 734 extends a third distance from the second portion 753 to the center of the tubular base 720. The third portion 755 extends a third distance parallel to the bottom surface 211 of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 723 of the sidewall 722. Thus, the third portion 755 of the bottom surface 734 also extends a third distance perpendicular to the inner surface 723 of the sidewall 722.

[0123] Because the bottom surface 734 of the cylindrical base 720 is also the outer surface of the faceplate 712, the formation of the generally convex bottom surface 734 described above is also referred to as the outer contouring of the faceplate 712. It should be noted that the contouring of the bottom surface 734 may begin at any radial location on the bottom surface 734 of the cylindrical base 720. Similarly, the contouring of the bottom surface 734 may end at any radial location on the bottom surface 734 of the cylindrical base 720. For example, the first, second, and third distances about the bottom surface 734 can vary. Additionally, the slope of the contoured portion of the bottom surface 734 may be linear or polynomial.

[0124] Although the contouring of the top surface 721 and the bottom surface 734 of the tubular base 720 is shown symmetrical, the contouring of the top surface 721 and the bottom surface 734 may be asymmetrical. For example, in some applications, the first, second, and third distances for the top surface 721 and the bottom surface 734 may vary differently.

[0125] The cylindrical base 720 includes a plurality of through holes 732-1, 732-2, 732-3, ..., and 732-N (collectively, through holes 732). The through holes 732 extend from a bottom of the face plate 712 to a top of the face plate 712. Specifically, the through holes 732 extend from a bottom of the cylindrical base 720 to a top of the cylindrical base 720. More specifically, the through holes 732 extend from a bottom surface 734 of the cylindrical base 720 to a top surface 721 of the cylindrical base 720. The bottom surface 734 faces the substrate, and the top surface 721 faces away from the substrate. The bottom surface 734 may be referred to as the outer surface 734 of the cylindrical base 720, and the top surface 721 may be referred to as the inner surface 721 of the cylindrical base 720.

[0126] The through holes 732 extend vertically through the tubular base 720 along an axis perpendicular to the surface on which the tubular base 720 and the backplate 210 rest. The through holes 732 are distributed from the center of the tubular base 720 to the ID of the sidewall 722. The through holes 732 are in fluid communication with the plenum 730 and the inlet 206. Gas received from the inlet 206 flows through the plenum 730 and through the through holes 732 into the processing chamber.

[0127] The contouring of the top surface 721 and bottom surface 734 of the cylindrical base 720 allows the height (or depth) of the through-holes 732 in the cylindrical base 720 to vary from the ID of the sidewall 722 to the center of the cylindrical base 720. For example, although the distances over which portions of the top surface 721 and bottom surface 734 extend are shown to be the same, those distances may vary. Thus, in the illustrated example, the heights of the through-holes 732 are shown to be the same, but the heights of the through-holes 732 in different zones may be different (discussed below). The variation in the height of the through-holes 732 varies the resistance to the flow of process gases across the radius of the showerhead 700. The variation in the resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate.

[0128] In addition, contouring the bottom surface 734 of the cylindrical base 720 also varies the direction in which the process gas exits the through-holes 732, which further changes the film profile of the film deposited on the substrate. Furthermore, as described above with reference to Figure 1, the gap between the showerhead 700 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 700, and the substrate, which further changes the film profile of the film deposited on the substrate.

[0129] Specifically, the contouring of the top surface 721 and the bottom surface 734 of the cylindrical base 720 divides the cylindrical base 720 into a plurality of concentric radial zones. In the illustrated example, the cylindrical base 720 is divided into first, second, and third concentric radial zones, denoted as Z1, Z2, and Z3, respectively. The first zone Z1 of the cylindrical base 720 extends radially inwardly from the ID of the sidewall 722 toward the center of the cylindrical base 720 by a first distance. The OD of the first zone Z1 is the same as the ID of the sidewall 722. The second zone Z2 of the cylindrical base 720 extends radially inwardly from the ID of the first zone Z1 by a second distance toward the center of the cylindrical base 720. The OD of the second zone Z2 is the same as the ID of the first zone Z1. A third zone Z3 of the tubular base 720 extends radially inward a third distance from the ID of the second zone Z2 to the center of the tubular base 720. The OD of the third zone Z3 is the same as the ID of the second zone Z2.

[0130] The width of the first zone Z1 (i.e., the difference between the OD and ID of the first zone Z1) is equal to the first distance. The width of the second zone Z2 (i.e., the difference between the OD and ID of the second zone Z2) is equal to the second distance. The width of the third zone Z3 (i.e., the distance between the OD of the third zone Z3 and the center of the cylindrical base 720) is equal to the third distance. The heights of the through-holes 732 in the first, second, and third radial zones, designated as Z1, Z2, and Z3, of the cylindrical base 720 can vary depending on the contouring of the top surface 721 and the bottom surface 734 of the cylindrical base 720. Furthermore, the contouring of the bottom surface 734 of the cylindrical base 720 causes the process gas to exit the through-holes 732 in the second zone Z2 in a different direction than the through-holes 732 in the first zone Z1 and the third zone Z3. Additionally, the distance between the through-holes 732 in different zones and the substrate is also different, and therefore the film profile of a substrate processed using the showerhead 700 will be different than the film profile of a substrate processed using the showerhead illustrated in FIGS.

[0131] 8 illustrates a showerhead 800 including a faceplate according to the present disclosure. The faceplate includes both inner and outer contouring as described in detail below. The showerhead 800 includes a base 802 and a stem portion 204. The base 802 includes a backplate 210 and a faceplate 812. The faceplate 812 includes a combination of features of the faceplates 302 and 502 shown in FIGS. 3 and 5.

[0132] The faceplate 812 is generally C-shaped and also cylindrical. Specifically, the faceplate 812 includes a cylindrical base 820 and a sidewall 822. The sidewall 822 extends from the cylindrical base 820. The sidewall 822 extends toward and is attached to the backplate 210. Specifically, the sidewall 822 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 823 of the sidewall 822. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 823 of the sidewall 822.

[0133] The backplate 210 and the faceplate 812 define a plenum 830. Specifically, the bottom surface 211 of the backplate 210, the top surface 821 of the tubular base 820, and the inner surface 823 of the sidewall 822 define the plenum 830. The plenum 830 is in fluid communication with the inlet 206.

[0134] Neither the top surface 821 of the tubular base 820, which faces away from the substrate, nor the bottom surface 834, which faces the substrate, is flat, but instead is contoured, e.g., the top surface 821 of the tubular base 820 is generally concave, and the bottom surface 834 of the tubular base 820 is generally convex.

[0135] Specifically, a first portion 850 of the top surface 821 extends radially inward from the ID of the sidewall 822 a first distance. The first portion 850 extends perpendicularly from the inner surface 823 of the sidewall 822 a first distance. The first portion 850 extends parallel to the bottom surface 211 of the backplate 210 a first distance. And, a second portion 852 of the top surface 821 extends radially inward from the first portion 850 a second distance and tapers toward the bottom surface 834 of the tubular base 820. The second portion 852 tapers toward the center of the tubular base 820 a second distance.

[0136] And, a third portion 854 of the top surface 821 extends a third distance from the second portion 852 to the center of the tubular base 820. The third portion 854 extends a third distance parallel to the bottom surface 211 of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 823 of the sidewall 822. The third portion 854 of the top surface 821 also extends a third distance perpendicular to the inner surface 823 of the sidewall 822.

[0137] Because the top surface 821 of the tubular base 820 is also the inner surface of the faceplate 812, the formation of the generally concave top surface 821 described above is also referred to as an inner contouring of the faceplate 812. It is noted that the contouring of the top surface 821 may begin at any radial location on the top surface 821 of the tubular base 820. Similarly, the contouring of the top surface 821 may end at any radial location on the top surface 821 of the tubular base 820. For example, the first, second, and third distances about the top surface 821 can vary. Furthermore, the slope of the contoured portion of the top surface 821 may be linear or polynomial.

[0138] Additionally, a first portion 860 of the bottom surface 834 extends radially inward from the OD of the sidewall 822 a first distance. The first portion 860 extends perpendicularly from the sidewall 822 a first distance and is parallel to the bottom surface 211 of the backplate 210. And a second portion 862 of the bottom surface 834 extends from the first portion 860 a second distance. The second portion 860 tapers radially inward toward the top surface 821 a second distance. The second portion 862 tapers toward the center of the tubular base 820 a second distance.

[0139] And, a third portion 864 of the bottom surface 834 extends from the second portion 862 by a third distance. The third portion 864 extends radially inward toward the center of the tubular base 820 by a third distance. The third portion 864 extends perpendicular to the sidewall 822 by a third distance and is parallel to the bottom surface 211 of the backplate 210. The third portion 864 is also parallel to the first portion 860. Note that the first, second, and third distances about the bottom surface 834 of the tubular base 820 are different from the first, second, and third distances about the top surface 821 of the tubular base 820.

[0140] And, a fourth portion 866 of the bottom surface 834 extends from the third portion 864 by a fourth distance. The fourth portion 866 tapers toward the center of the tubular base 820 in a direction away from the top surface 821 by a fourth distance. And, a fifth portion 868 of the bottom surface 834 extends from the fourth portion 866 by a fifth distance. The fifth portion 868 extends from the fourth portion 866 to the center of the tubular base 820 by a fifth distance. The fifth portion 868 extends parallel to the bottom surface 211 of the backplate 210. The fifth portion 868 extends perpendicular to the inner surface 823 of the sidewall 822 by a fifth distance. The fifth portion 868 is also parallel to the third portion 864 and the first portion 860.

[0141] Because the bottom surface 834 of the cylindrical base 820 is also the outer surface of the face plate 812, the formation of the generally convex bottom surface 834 described above is also referred to as the outer contouring of the face plate 812. It should be noted that the contouring of the bottom surface 834 may begin at any radial location on the bottom surface 834 of the cylindrical base 820. Similarly, the contouring of the bottom surface 834 may end at any radial location on the bottom surface 834 of the cylindrical base 820. For example, in some applications, the first, second, third, fourth, and fifth distances about the bottom surface 834 can vary differently. Furthermore, the slope of the contoured portion of the bottom surface 834 may be linear or polynomial.

[0142] Although the contouring of portions of the top surface 821 and bottom surface 834 of the tubular base 820 is shown symmetrical, the contouring of these portions of the top surface 821 and bottom surface 834 may be asymmetrical. For example, in some applications, the second distance and the third distance for the top surface 821 and the fourth distance and the fifth distance for the bottom surface 834 can vary differently.

[0143] The cylindrical base 820 includes a plurality of through holes 832-1, 832-2, 832-3, ..., and 832-N (collectively, through holes 832). The through holes 832 extend from a bottom of the face plate 812 to a top of the face plate 812. Specifically, the through holes 832 extend from a bottom of the cylindrical base 820 to a top of the cylindrical base 820. More specifically, the through holes 832 extend from a bottom surface 834 of the cylindrical base 820 to a top surface 821 of the cylindrical base 820. The bottom surface 834 faces the substrate, and the top surface 821 faces away from the substrate. The bottom surface 834 may be referred to as the outer surface 834 of the cylindrical base 820, and the top surface 821 may be referred to as the inner surface 821 of the cylindrical base 820.

[0144] The through holes 832 extend vertically through the tubular base 820 along an axis perpendicular to the surface on which the tubular base 820 and the backplate 210 rest. The through holes 832 are distributed from the center of the tubular base 820 to the ID of the sidewall 822. The through holes 832 are in fluid communication with the plenum 830 and the inlet 206. Gas received from the inlet 206 flows through the plenum 830 and through the through holes 832 into the processing chamber.

[0145] The contouring of the top surface 821 and bottom surface 834 of the tubular base 820 allows the height (or depth) of the through holes 832 in the tubular base 820 to vary from the ID of the sidewall 822 to the center of the tubular base 820. For example, although portions of the contouring of the top surface 821 and bottom surface 834 are illustrated as similar, the contouring of these portions of the top surface 821 and bottom surface 834 may be different. Thus, in the illustrated example, the height of some of the through holes 832 is shown to be the same, but the height of the through holes 832 in different zones may be different, similar to what was described above with reference to Figures 3 and 5.

[0146] Further, in the illustrated example, the height of the through-holes 832 in the outermost zone closest to the ID of the sidewall 822 is greater than the height of the remaining through-holes 832. An example of the outermost zone is shown in FIG. 5 as the second zone Z2. Further, due to the contouring of the bottom surface 834 of the cylindrical base 820, the height of the through-holes 832 in the outermost zone varies, and therefore provides a varying resistance to the flow of process gas. Specifically, the height of the through-holes 832 in the outermost zone gradually decreases from the ID of the sidewall 822 toward the center of the cylindrical base 820. Thus, the through-holes 832 in the outermost zone provide a gradually decreasing resistance to the flow of process gas from the ID of the sidewall 822 toward the center of the cylindrical base 820.

[0147] Thus, the variation in the height of the through-holes 832 varies the resistance to the flow of the process gas across the radius of the showerhead 800. The variation in the resistance to the flow of the process gas across the radius varies the film profile of the film deposited on the substrate. In addition, the contouring of the bottom surface 834 of the cylindrical base 820 also varies the direction in which the process gas exits the through-holes 832, which further varies the film profile of the film deposited on the substrate. Also, the distance between the through-holes 832 in different zones and the substrate is different. Additionally, as described above with reference to FIG. 1, the gap between the showerhead 800 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 800, and the substrate, which further varies the film profile of the film deposited on the substrate. Thus, the film profile of the substrate processed using the showerhead 800 will be different than the film profile of the substrate processed using the showerheads illustrated in FIGS. 2-7.

[0148] FIG. 9 illustrates a showerhead 900 that is a variation of the showerhead 800 illustrated in FIG. 8. The showerhead 900 includes a faceplate 812-1 according to the present disclosure. The showerhead 900 is similar to the showerhead 800, except for the following differences in the faceplate 812-1. As described above with reference to FIG. 8, in the showerhead 800, the first portion 850 of the top surface 821 of the tubular base 820 extends parallel to the bottom surface 211 of the backplate 210 for a first distance. Instead, in the showerhead 900, the outermost portion of the top surface 821 tapers, as shown at 870 in FIG. 9. Thus, the first portion 850 shown in FIG. 8 is shown in FIG. 9 as first portion 850-1.

[0149] Specifically, the outermost portion 870 of the top surface 821 extends radially inward from the ID of the sidewall 822 a fourth distance. The outermost portion 870 extends toward the bottom surface 211 of the backplate 210 a fourth distance. And the first portion 850-1 extends radially inward from the outermost portion 870 a distance less than the first distance described with reference to the first portion 850 illustrated in FIG. 8. The first portion 850-1 extends perpendicular to the inner surface 823 of the sidewall 822 and parallel to the bottom surface 211 of the backplate 210 a distance less than the first distance. The remainder of the showerhead 900 is similar to the remainder of the showerhead 800.

[0150] The tapered outermost portion 870 causes the height of the outermost through-holes 832 (e.g., in the second zone Z2 shown in FIG. 5) to vary, resulting in a varying resistance to the flow of process gas. In addition, the tapered outermost portion 870 also varies the direction in which the process gas exits the outermost through-holes 832, thereby further changing the film profile of the film deposited on the substrate as compared to the showerhead 800. Furthermore, the distance between the outermost through-holes 832 and the substrate is also different. Thus, the film profile of a substrate processed using the showerhead 900 is different from the film profile of a substrate processed using the showerhead 800, as well as the other showerheads illustrated in FIGS. 2-7.

[0151] 10 illustrates a showerhead 1000 including a faceplate according to the present disclosure. The faceplate includes both inner and outer contouring as described in detail below. The showerhead 1000 includes a base 1002 and a stem portion 204. The base 1002 includes a backplate 210 and a faceplate 1012. The faceplate 1012 includes a combination of features of the faceplates 302 and 602 shown in FIGS. 3 and 6.

[0152] The faceplate 1012 is generally C-shaped and also cylindrical. Specifically, the faceplate 1012 includes a cylindrical base 1020 and a sidewall 1022. The sidewall 1022 extends from the cylindrical base 1020. The sidewall 1022 extends toward and is attached to the backplate 210. Specifically, the sidewall 1022 is attached to the OD of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 1023 of the sidewall 1022.

[0153] The backplate 210 and the faceplate 1012 define a plenum 1030. Specifically, the bottom surface 211 of the backplate 210, the top surface 1021 of the tubular base 1020, and the inner surface 1023 of the sidewall 1022 define the plenum 1030. The plenum 1030 is in fluid communication with the inlet 206.

[0154] Neither the top surface 1021 of the cylindrical base 1020, which faces away from the substrate, nor the bottom surface 1034, which faces the substrate, is flat, but instead is contoured. For example, the top surface 1021 of the cylindrical base 1020 is generally concave, and the bottom surface 1034 of the cylindrical base 1020 is also generally concave. In the illustrated example, the contours of the top surface 1021 and the bottom surface 1034 of the cylindrical base 1020 are mirror images of each other. However, in some applications, the contours of the top surface 1021 and the bottom surface 1034 of the cylindrical base 1020 may be different.

[0155] As shown, a first portion 1050 of the top surface 1021 extends radially inward from the ID of the sidewall 1022 a first distance. The first portion 1050 extends perpendicularly from the inner surface 1023 of the sidewall 1022 a first distance. The first portion 1050 extends parallel to the bottom surface 211 of the backplate 210 a first distance. And, a second portion 1052 of the top surface 1021 extends radially inward from the first portion 1050 a second distance and tapers toward the bottom surface 1034 of the tubular base 1020. The second portion 1052 tapers toward the center of the tubular base 1020 a second distance. And, a third portion 1054 of the top surface 1021 extends from the second portion 1052 a third distance to the center of the tubular base 1020. The third portion 1054 extends a third distance parallel to the bottom surface 211 of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 1023 of the sidewall 1022. Thus, the third portion 1054 of the top surface 1021 also extends a third distance perpendicular to the inner surface 1023 of the sidewall 1022.

[0156] Because the top surface 1021 of the tubular base 1020 is also the inner surface of the faceplate 1012, the formation of the generally concave top surface 1021 described above is also referred to as an inner contouring of the faceplate 1012. It is noted that the contouring of the top surface 1021 may begin at any radial location on the top surface 1021 of the tubular base 1020. Similarly, the contouring of the top surface 1021 may end at any radial location on the top surface 1021 of the tubular base 1020. For example, the first, second, and third distances for the top surface 1021 can vary. Furthermore, the slope of the contoured portion of the top surface 1021 may be linear or polynomial.

[0157] Additionally, a first portion 1051 of the bottom surface 1034 extends radially inward from the OD of the sidewall 1022 by a first distance. The first portion 1051 extends perpendicularly from the sidewall 1022 by a first distance. The first portion 1051 extends parallel to the bottom surface 211 of the backplate 210 by a first distance. The first portion 1051 of the top surface 1021 is parallel to the first portion 1050 of the bottom surface 1034. And, a second portion 1053 of the bottom surface 1034 extends radially inward from the first portion 1051 by a second distance. The second portion 1053 tapers toward the top surface 1021 of the tubular base 1020 by a second distance. The second portion 1053 tapers toward the center of the tubular base 1020 by a second distance.

[0158] And, a third portion 1055 of the bottom surface 1034 extends a third distance from the second portion 1053 to the center of the tubular base 1020. The third portion 1055 extends parallel to the bottom surface 211 of the backplate 210. The bottom surface 211 of the backplate 210 is perpendicular to the inner surface 1023 of the sidewall 1022. Thus, the third portion 1055 of the bottom surface 1034 also extends a third distance perpendicular to the inner surface 1023 of the sidewall 1022. The third portion 1054 of the top surface 1021 is parallel to the third portion 1055 of the bottom surface 1034.

[0159] Because the bottom surface 1034 of the cylindrical base 1020 is also the outer surface of the faceplate 1012, the formation of the generally concave bottom surface 1034 described above is also referred to as the outer contouring of the faceplate 1012. It should be noted that the contouring of the bottom surface 1034 may begin at any radial location on the bottom surface 1034 of the cylindrical base 1020. Similarly, the contouring of the bottom surface 1034 may end at any radial location on the bottom surface 1034 of the cylindrical base 1020. For example, the first, second, and third distances about the bottom surface 1034 can vary. Additionally, the slope of the contoured portion of the bottom surface 1034 may be linear or polynomial.

[0160] In the illustrated example, the first, second, and third distances are shown to be equal for the top surface 1021 and the bottom surface 1034. However, in some applications, the first, second, and third distances for the top surface 1021 may be different than the first, second, and third distances for the bottom surface 1034. Thus, although the contouring of the top surface 1021 and the bottom surface 1034 is shown symmetrical, the contouring of the top surface 1021 and the bottom surface 1034 may be asymmetrical.

[0161] The cylindrical base 1020 includes a plurality of through holes 1032-1, 1032-2, 1032-3, ..., and 1032-N (collectively, through holes 1032). The through holes 1032 extend from a bottom of the face plate 1012 to a top of the face plate 1012. Specifically, the through holes 1032 extend from a bottom of the cylindrical base 1020 to a top of the cylindrical base 1020. More specifically, the through holes 1032 extend from a bottom surface 1034 of the cylindrical base 1020 to a top surface 1021 of the cylindrical base 1020. The bottom surface 1034 faces the substrate, and the top surface 1021 faces away from the substrate. The bottom surface 1034 may be referred to as the outer surface 1034 of the tubular base 1020 , and the top surface 1021 may be referred to as the inner surface 1021 of the tubular base 1020 .

[0162] The through holes 1032 extend vertically through the tubular base 1020 along an axis perpendicular to the surface on which the tubular base 1020 and the backplate 210 rest. The through holes 1032 are distributed from the center of the tubular base 1020 to the ID of the sidewall 1022. The through holes 1032 are in fluid communication with the plenum 1030 and the inlet 206. Gas received from the inlet 206 flows through the plenum 1030 and through the through holes 1032 into the processing chamber.

[0163] Contouring the top 1021 and bottom 1034 surfaces of the cylindrical base 1020 allows the height (or depth) of the through-holes 1032 in the cylindrical base 1020 to vary from the ID of the sidewall 1022 to the center of the cylindrical base 1020. Varying the height of the through-holes 1032 varies the resistance to the flow of process gases across the radius of the showerhead 1000. Varying the resistance to the flow of process gases across the radius varies the film profile of the film deposited on the substrate.

[0164] In addition, contouring the bottom surface 1034 of the cylindrical base 1020 also varies the direction in which the process gas exits the through-holes 1032, which further changes the film profile of the film deposited on the substrate. Furthermore, as described above with reference to Figure 1, the gap between the showerhead 1000 and the substrate can be varied. Varying the gap changes the plasma density, the showerhead 1000, and the substrate, which further changes the film profile of the film deposited on the substrate.

[0165] Specifically, the contouring of the top surface 1021 and the bottom surface 1034 of the cylindrical base 1020 divides the cylindrical base 1020 into a plurality of concentric radial zones. In the illustrated example, the cylindrical base 1020 is divided into first, second, and third concentric radial zones, denoted as Z1, Z2, and Z3, respectively. The first zone Z1 of the cylindrical base 1020 extends radially inward from the ID of the sidewall 1022 toward the center of the cylindrical base 1020 by a first distance. The OD of the first zone Z1 is the same as the ID of the sidewall 1022. The second zone Z2 of the cylindrical base 1020 extends radially inward from the ID of the first zone Z1 by a second distance toward the center of the cylindrical base 1020. The OD of the second zone Z2 is the same as the ID of the first zone Z1. A third zone Z3 of the tubular base 1020 extends radially inward a third distance from the ID of the second zone Z2 to the center of the tubular base 1020. The OD of the third zone Z3 is the same as the ID of the second zone Z2.

[0166] The width of the first zone Z1 (i.e., the difference between the OD and ID of the first zone Z1) is equal to the first distance. The width of the second zone Z2 (i.e., the difference between the OD and ID of the second zone Z2) is equal to the second distance. The width of the third zone Z3 (i.e., the distance between the OD of the third zone Z3 and the center of the cylindrical base 1020) is equal to the third distance. The heights of the through holes 1032 in the first, second, and third radial zones, denoted as Z1, Z2, and Z3, of the cylindrical base 1020 can vary depending on the contouring of the top surface 1021 and the bottom surface 1034 of the cylindrical base 1020.

[0167] For example, the height of the through-hole 1032 in the outermost first zone Z1 is greater than the height of the through-hole 1032 in the second zone Z2 and the third zone Z3. Thus, the through-hole 1032 in the first zone Z1 provides a greater resistance to the flow of the process gas than the through-hole 1032 in the second zone Z2 and the third zone Z3. The height of the through-hole 1032 in the innermost third zone Z3 is less than the height of the through-hole 1032 in the first zone Z1 and the second zone Z2. Thus, the through-hole 1032 in the third zone Z3 provides a lesser resistance to the flow of the process gas than the through-hole 1032 in the first zone Z1 and the second zone Z2.

[0168] Additionally, the height of the through-holes 1032 in the second zone Z2 decreases from the OD of the second zone Z2 to the ID of the second zone Z2 (i.e., toward the center of the cylindrical base 1034). Thus, the through-holes 1032 in the second zone Z2 provide a gradually decreasing resistance to the flow of process gas from the OD of the second zone Z2 to the ID of the second zone Z2 (i.e., toward the center of the cylindrical base 1034).

[0169] Additionally, due to the contouring of the bottom surface 1034 of the cylindrical base 1020, the process gases exit the through-holes 1032 in the second zone Z2 in a different direction than the through-holes 1032 in the first zone Z1 and the third zone Z3. Additionally, the distance between the through-holes 1032 and the substrate in different zones is also different. Thus, the film profile of a substrate processed using the showerhead 1000 will be different than the film profile of a substrate processed using the showerheads illustrated in FIGS. 2-9.

[0170] It should be noted that, although convex inner contouring of the faceplate is not explicitly shown, in the showerhead 200, the top surface 221 of the cylindrical base 234 of the faceplate 212 can be contoured to have a convex shape. For example, the top surface 221 of the cylindrical base 234 of the faceplate 212 can be curved toward the bottom surface 211 of the backplate 210. In this configuration, the characteristics of the through-holes and the process gas flow therethrough described with reference to FIG. 3 would be reversed or inverted. Additionally, similar convex contouring of the top surface of the cylindrical base can be implemented in conjunction with the contouring of the bottom surface of the cylindrical base in the showerheads shown in FIGS. 4-10 to achieve additional film profiles and properties.

[0171] The foregoing description is merely exemplary in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in various forms. Thus, while the disclosure includes certain examples, the true scope of the disclosure should not be so limited, since other variations will become apparent upon review of the drawings, the specification, and the following claims. It should be understood that one or more steps in a method may be performed in different orders (or simultaneously) without altering the principles of the disclosure. Furthermore, although each of the embodiments is described above as having certain features, any one or more of these features described with respect to any embodiment of the disclosure may be implemented in any of the other embodiments and / or combined with features of any of the other embodiments, even if the combinations are not explicitly described. In other words, the described embodiments are not mutually exclusive, and the order of one or more of the embodiments may be rearranged with one another within the scope of the disclosure.

[0172] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms including "connected," "engaged," "coupled," "adjacent," "next to," "on," "above," "below," and "disposed." Unless expressly described as "direct," when a relationship between a first element and a second element is described in the disclosure above, the relationship may be a direct relationship where no other intervening elements exist between the first element and the second element, but it may also be an indirect relationship where one or more intervening elements exist (either spatially or functionally) between the first element and the second element. As used herein, the phrase at least one of A, B, and C should be interpreted to mean a logical non-exclusive OR (A OR B OR C), and not to mean "at least one of A, at least one of B, and at least one of C."

[0173] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may include semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics to control the operation of the electronics before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as a "controller" that may control various parts or sub-parts of one or more systems. The controller may be programmed to control any of the processes disclosed herein (e.g., delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid delivery settings, position and motion settings, wafer loading and unloading to and from the tool, and other transport tools and / or load locks connected or interlocked with the particular system, etc.) depending on the processing requirements and / or type of system.

[0174] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that, for example, receive instructions, issue instructions, control operations, enable cleaning operations, and enable end-point metrology. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operational parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0175] In some implementations, the controller may be part of or coupled to a computer integrated with, coupled to, or otherwise networked to the system, or a combination thereof. For example, the controller may be all or part of a host computer system in the "cloud" or in a fabrication factory that allows remote access to wafer processing. The computer may allow remote access to the system to monitor the current progress of a fabrication operation, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of a current process, set processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows input or programming of parameters and / or settings, which are then communicated from the remote computer to the system.

[0176] In some examples, the controller receives instructions in the form of data that specifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed or the type of tool the controller is configured to couple to or control. Thus, as described above, the controller may be distributed, such as by including one or more separate controllers that are networked together and work toward a common purpose, such as the processes and controls described herein. An example of a controller distributed for such purposes includes one or more integrated circuits on the chamber that are combined to control the processes on the chamber and communicate with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer).

[0177] Examples of systems include, but are not limited to, a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system that may be associated with or used in the fabrication and / or manufacturing of semiconductor wafers.

[0178] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool parts, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used in material transport to and from containers of wafers to and from tool locations and / or load ports within a semiconductor manufacturing factory.

Claims

1. 1. A showerhead for processing a substrate, comprising: The back plate and a faceplate attached to the backplate; The face plate is a first surface facing the backplate; a second surface opposite to the first surface; a plurality of through holes extending between the first surface and the second surface; The showerhead, wherein a center of the second surface of the faceplate is convex.

2. 10. The showerhead of claim 1, the backplate and the faceplate are cylindrical, the faceplate includes a sidewall attached to the backplate, the backplate, the faceplate, and the sidewall define a plenum, and the showerhead comprises: a stem portion attached to the backplate and including a gas inlet; a conduit extending from the gas inlet through the stem, the backplate, and the faceplate to the plenum; the gas inlet, the plenum, and the through-holes are in fluid communication with one another.

3. 1. A system comprising: The showerhead of claim 1 ; a base for supporting the substrate; an actuator that moves the pedestal relative to the showerhead; a controller for controlling the actuator; A system comprising:

4. 1. A system comprising: The showerhead according to claim 2; a gas source supplying gas to the gas inlet; a base for supporting the substrate; a radio frequency source that provides radio frequency power to activate the gas; an actuator that moves the pedestal relative to the showerhead; a controller for controlling the gas source, the radio frequency source, and the actuator; A system comprising:

5. 10. The showerhead of claim 1, the backplate and the faceplate are cylindrical, and the remainder of the second surface of the faceplate extends radially outward from an edge of the center of the faceplate and is flat.

6. 6. The showerhead of claim 5, the first surface of the faceplate facing the backplate is flat and parallel to the remaining portions.

7. 6. The showerhead of claim 5, The showerhead, wherein the central portion and a portion of the remaining portion include the plurality of through holes.

8. 10. The showerhead of claim 1, The showerhead, wherein the first surface of the faceplate facing the backplate is flat.

9. 10. The showerhead of claim 1, the backplate and the faceplate are cylindrical; a first remaining portion of the second surface of the face plate extends radially outward from an end of the central portion and is flat; a second remaining portion of the second surface of the faceplate extends radially outward from an end of the first remaining portion and extends radially outward and downward.

10. 10. The showerhead of claim 9, the first surface of the faceplate facing the backplate is flat and parallel to the first remaining portion.

11. 10. The showerhead of claim 9, the center portion, the first remaining portion, and a portion of the second remaining portion include the plurality of through-holes.

12. 10. The showerhead of claim 1, The showerhead, wherein a center of the first surface of the faceplate is convex.

13. 13. The showerhead of claim 12, the center of the first surface of the faceplate is parallel to the center of the second surface of the faceplate.

14. 13. The showerhead of claim 12, the backplate and the faceplate are cylindrical; a first remaining portion of the first surface of the face plate extends radially outward from an edge of the central portion of the first surface and is flat; a second remaining portion of the second surface of the face plate extends radially outward from an edge of the central portion of the second surface and is flat; The showerhead, wherein the first remaining portion is parallel to the second remaining portion.

15. 15. The showerhead of claim 14, The showerhead, wherein the central portion of the first surface and the second surface, and a portion of the first remaining portion and a portion of the second remaining portion include the plurality of through-holes.

16. 13. The showerhead of claim 12, the backplate and the faceplate are cylindrical; a remainder of the first surface of the face plate extends radially outward from an edge of the central portion of the first surface and is flat; a first remaining portion of the second surface of the face plate extends radially outward from an edge of the central portion of the second surface and is flat; a second remaining portion of the second surface of the face plate extending radially outward from an end of the first remaining portion and extending radially outward and downward; the remaining portion of the first surface of the faceplate is parallel to the first remaining portion of the second surface of the faceplate.

17. 17. The showerhead of claim 16, the center of the first surface and the center of the second surface, a portion of the remaining portion of the first surface, and a portion of the first remaining portion and a portion of the second remaining portion of the second surface are provided with the plurality of through holes.

18. 13. The showerhead of claim 12, the backplate and the faceplate are cylindrical; a first remaining portion of the first surface of the face plate extends radially outward from an edge of the central portion of the first surface and is flat; a second remaining portion of the first surface of the face plate extending radially outward from an end of the first remaining portion and extending radially outward and downward; a third remaining portion of the second surface of the face plate extends radially outward from an edge of the central portion of the second surface and is flat; a fourth remaining portion of the second surface of the faceplate extends radially outward from an end of the third remaining portion and extends radially outward and downward.

19. 20. The showerhead of claim 18, the first remaining portion of the first surface of the faceplate is parallel to the third remaining portion of the second surface of the faceplate; the second remaining portion of the first surface of the faceplate is parallel to the fourth remaining portion of the second surface of the faceplate.

20. 20. The showerhead of claim 18, the center of the first surface and the center of the second surface, and a portion of the first remaining portion to the fourth remaining portion of the first surface and the second surface, include the plurality of through-holes.

21. 1. A showerhead for processing a substrate, comprising: The back plate and a faceplate attached to the backplate, the backplate and the faceplate being cylindrical, the faceplate comprising: a first surface facing the backplate; a second surface opposite to the first surface; a faceplate including a plurality of through holes extending between the first surface and the second surface; Equipped with the second surface has a central portion that is convex; the remainder of the second surface of the faceplate extends radially outward from an edge of the center of the faceplate and is flat.

22. 22. The showerhead of claim 21, The showerhead, wherein the central portion and a portion of the remaining portion include the plurality of through holes.

23. 22. The showerhead of claim 21, The showerhead, wherein the first surface of the faceplate facing the backplate is flat.

24. 22. The showerhead of claim 21, the first surface of the faceplate facing the backplate is flat and parallel to the remaining portions.

25. 22. The showerhead of claim 21, a central portion of the first surface of the faceplate is convex; the remainder of the first surface extends radially outward from the edge of the central portion of the first surface and is flat.

26. 26. The showerhead of claim 25, The showerhead, wherein the first side of the faceplate is a mirror image of the second side of the faceplate.

27. 26. The showerhead of claim 25, the center of the first surface of the faceplate, the center of the second surface of the faceplate, a portion of the remaining area of ​​the second surface of the faceplate, and a portion of the remaining area of ​​the first surface of the faceplate are provided with the plurality of through holes.

28. 28. The showerhead of claim 27, the portion of the remaining portion of the second surface is parallel to the portion of the remaining portion of the first surface.

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