Organic compound, light-emitting device, light-emitting apparatus, electronic equipment, and illumination apparatus

Abstract

To provide an organic compound having high heat resistance.SOLUTION: The present invention provides an organic compound represented by general formula (G1) (where Q represents carbon or silicon, R1 and R2 each represent an alkyl group, an aryl group or the like, and n represents an integer of 1 to 3. α1 to α4 each represent a phenylene group or the like. At least one of R15, R25, and R31, and at least one of R45, R55, and R61 represents a single bond, and the other represent H, an alkyl group or the like, R11-R14, R21-R24, R32-R35, R41-R45, R51-R55, and R61-R65 each represent H, an alkyl group or the like).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to an organic compound, a light-emitting device, a light-emitting apparatus, a display device, an electronic device, a lighting apparatus, and an electronic device. Note that an embodiment of the present invention is not limited to the above technical field. The technical field of an embodiment of the present invention disclosed in the present specification and the like relates to an object, a method, or a manufacturing method. Alternatively, an embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of an embodiment of the present invention disclosed in the present specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting apparatus, a power storage device, a storage device, an imaging device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0002] Light-emitting devices (organic EL devices) that utilize electroluminescence (EL) using organic compounds are becoming more and more practical. The basic structure of these light-emitting devices is a pair of electrodes sandwiching an organic compound layer (EL layer) containing a light-emitting material between them. By applying a voltage to this device, carriers are injected, and the recombination energy of the carriers is utilized to emit light from the light-emitting material.

[0003] Since such light-emitting devices are self-luminous, when used as display pixels, they have advantages such as high visibility and no need for backlighting compared to liquid crystals, making them suitable for use in flat panel displays. Another major advantage of displays using such light-emitting devices is that they can be made thin and lightweight. Another characteristic is that they have an extremely fast response speed.

[0004] In addition, these light-emitting devices can have light-emitting layers formed continuously in two dimensions, making it possible to obtain surface-like light emission. This is a feature that is difficult to obtain with point light sources such as incandescent light bulbs and LEDs, or linear light sources such as fluorescent lamps, making them highly valuable as surface light sources for lighting and other applications.

[0005] Displays and lighting devices using such light-emitting devices are applicable to a variety of electronic devices, but research and development is ongoing to find light-emitting devices with better characteristics.

[0006] In improving the characteristics of light-emitting devices, there are many problems that depend on the materials that constitute the light-emitting device, such as organic compounds, metals, and metal compounds, and in order to overcome these problems, material development, improvements in device structures, etc. Patent Document 1 discloses a hole-transporting material, which is a type of organic compound, that can increase the luminous efficiency of a light-emitting device by using it.

[0007] Regarding the heat resistance of light-emitting devices, the glass transition temperature (T g ) is not sufficiently high, there is a problem that the brightness of the light-emitting device is deteriorated due to crystallization or the like. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] JP 2009-298767 A [Non-patent literature]

[0009] [Non-Patent Document 1] Nicholas J. Turro, V. Ramamurthy, JC Scaiano, "MODERN MOLECULAR PHOTOCHEMISTRY OF ORGANIC MOLECULES", UNIVERSITY SCIENCE BOOKS, published February 10, 2010, pp. 204-208 [Non-Patent Document 2] Daisaku TANAKA et al., “Ultra High Efficiency Green Organic Light-Emitting Devices”, Japanese Journal of Applied Physics, Vol. 46, No. 1, 2007, pp. L10-L12 Summary of the Invention [Problem to be solved by the invention]

[0010] One method for improving the heat resistance of organic compounds is to increase their molecular weight. Considering the effect on the carrier transport properties of organic compounds, it is possible to introduce substituents such as aryl groups and heteroaryl groups to increase the molecular weight, but this would cause another problem in that the S1 and T1 levels would be lowered.

[0011] In view of the above, an object of one embodiment of the present invention is to provide an organic compound having high heat resistance. g Another object of one embodiment of the present invention is to provide an organic compound having high S1 level and T1 level. Another object of one embodiment of the present invention is to provide an organic compound having a carrier-transport property.

[0012] Another object of one embodiment of the present invention is to provide a light-emitting device with favorable characteristics, to improve the reliability of the light-emitting device, and to improve the light-emitting efficiency of the light-emitting device.

[0013] Another object of one embodiment of the present invention is to provide a light-emitting device with low power consumption.Another object of one embodiment of the present invention is to provide a display device with low power consumption.Another object of one embodiment of the present invention is to provide a lighting device with low power consumption.

[0014] Another object of one embodiment of the present invention is to provide a novel organic compound, a novel light-emitting device, a novel display device, or a novel lighting device.

[0015] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0016] One embodiment of the present invention is an organic compound represented by the following general formula (G1).

[0017] [ka]

[0018] In the general formula (G1), Q represents carbon or silicon; 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, n represents an integer of 1 to 3, α 1 ~α 4 each independently represents a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenylene group; R 15、 R 25 , R 31 , R 45 , R 55 and R 61at least one of represents a single bond, and the others each independently represent hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; R 11 ~R 14 , R 21 ~R 24 , R 32 ~R 35 , R 41 ~R 44 , R 51 ~R 54 , and R 62 ~R 65 each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, provided that R 15 If is a single bond, R 15 is α 2 It bonds to form a ring. 45 If is a single bond, R 45 is α 4 It also bonds to a ring. 25 and R 31 If both are single bonds, R 25 and R 31 are bonded together to form a ring. 55 and R 61 If both are single bonds, R 55 and R 61 are bonded to each other to form a ring. 25 and R 31 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 2 is a substituted or unsubstituted biphenylene group, R 25 and R 31 One of them is α 2 It bonds to form a ring. 55 and R 61 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 4 is a substituted or unsubstituted biphenylene group, R 55 and R61 One of them is α 4 It bonds to form a ring.

[0019] In addition, one embodiment of the present invention is a method for manufacturing a semiconductor device having the above-mentioned structure, 1 and α 3 are organic compounds each independently a substituted or unsubstituted m-phenylene group.

[0020] Another embodiment of the present invention is an organic compound represented by any one of the following general formulas (G2-1), (G1-2-2), and (G2-3).

[0021] [ka]

[0022] In the general formulas (G2-1), (G1-2-2) and (G2-3), Q represents carbon or silicon; 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, n represents an integer of 1 to 3, α 1 ~α 4 each independently represents a substituted or unsubstituted phenyl group or a substituted or unsubstituted biphenyl group; R 11 ~R 15 , R 21 ~R 25 , R 31 ~R 35 , R 41 ~R 45 , R 51 ~R 55 , R 61 ~R 65 , R 71 ~R 74 , R 81 ~R 84 , R 91 ~R 96 and R 101 ~R 106each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.

[0023] In addition, one aspect of the present invention is a method for manufacturing a semiconductor device comprising the steps of: g is an organic compound whose temperature is 100°C or higher.

[0024] Another embodiment of the present invention is an organic compound represented by any one of the following structural formulas (100), (101), (102), and (114).

[0025] [ka]

[0026] Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer (EL layer). The organic compound layer is located between the first electrode and the second electrode, and the organic compound layer includes the organic compound of one embodiment of the present invention (the organic compound represented by General Formula (G1)).

[0027] Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer (EL layer). The organic compound layer is located between the first electrode and the second electrode. The organic compound layer is composed of a plurality of layers containing an organic compound and includes one or more light-emitting layers. Any of the layers from a layer in contact with the first electrode to at least the light-emitting layer includes the organic compound of one embodiment of the present invention (the organic compound represented by General Formula (G1)).

[0028] Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer (EL layer). The organic compound layer is located between the first electrode and the second electrode. The organic compound layer is composed of a plurality of layers containing an organic compound and includes one or more light-emitting layers. The light-emitting layer includes the organic compound of one embodiment of the present invention (the organic compound represented by General Formula (G1)) and a second organic compound. The second organic compound has a π-electron-deficient heteroaromatic ring.

[0029] Another embodiment of the present invention is a light-emitting device including a first organic compound represented by the following general formula (L1): an organic compound layer (EL layer) formed between a pair of electrodes has a stacked structure of multiple layers including a light-emitting layer, and ends of the organic compound layer are aligned or approximately aligned, the organic compound layer has a first partial structure, a second partial structure, and a third partial structure, the first partial structure and the second partial structure are connected via the third partial structure, at least one of the first partial structure and the second partial structure has one or more of a π-electron-rich heteroaromatic ring, an aromatic amine skeleton, and a π-electron-deficient heteroaromatic ring, and the third partial structure includes a first organic compound represented by the following general formula (L1): The first organic compound includes the organic compound of one embodiment of the present invention described above (an organic compound represented by the general formula (G1)).

[0030] [ka]

[0031] In the general formula (L1), Q represents carbon or silicon, R 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; and n represents an integer of 1 to 3.

[0032] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the first organic compound is contained in a light-emitting layer or in a layer in contact with the light-emitting layer.

[0033] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which either the first partial structure or the second partial structure is represented by the following general formula (T1):

[0034] [ka]

[0035] In general formula (T1), α 1 and α 2 each independently represents a substituted or unsubstituted arylene group having 6 to 12 carbon atoms; Ar 1 ~Ar 3 Each independently represents a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. 1 and α 2 may or may not be bonded to each other to form a ring. 2 and Ar 2 may or may not be bonded to each other to form a ring. 2 and Ar 3 may or may not be bonded to each other to form a ring.

[0036] In addition, in one embodiment of the present invention, in the light-emitting device having the above structure, the first organic compound is T g is 100° C. or higher.

[0037] Another embodiment of the present invention is a light-emitting device including the light-emitting device having any of the above structures and a transistor or a substrate.

[0038] Another embodiment of the present invention is an electronic device including a light-emitting device having any of the above structures and a detection unit, an input unit, or a communication unit.

[0039] Another embodiment of the present invention is a lighting device including a light-emitting device having any of the above structures and a housing. Effect of the Invention

[0040] According to one embodiment of the present invention, an organic compound having high heat resistance can be provided. g According to one embodiment of the present invention, an organic compound having high S1 level and high T1 level can be provided. According to one embodiment of the present invention, an organic compound having a carrier-transporting property can be provided. Furthermore, an organic compound that can be used for a light-emitting layer and a layer in contact with the light-emitting layer of a light-emitting device that exhibits blue fluorescence or phosphorescence can be provided.

[0041] According to one embodiment of the present invention, a light-emitting device with favorable characteristics can be provided. According to one embodiment of the present invention, the reliability of the light-emitting device can be improved. According to one embodiment of the present invention, the light-emitting efficiency of the light-emitting device can be improved. Furthermore, a light-emitting device having heat resistance capable of withstanding heating during manufacturing, storage, operation, and the like can be provided.

[0042] According to one embodiment of the present invention, a light-emitting device with low power consumption can be provided. According to one embodiment of the present invention, a display device with low power consumption can be provided. According to one embodiment of the present invention, a lighting device with low power consumption can be provided.

[0043] According to one embodiment of the present invention, a novel organic compound, a novel light-emitting device, a novel light-emitting apparatus, a novel display device, or a novel lighting device can be provided.

[0044] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief description of the drawings]

[0045] [Figure 1] 1A to 1F are diagrams illustrating a configuration of a light-emitting device according to an embodiment. [Diagram 2] FIG. 2 is a diagram illustrating a configuration of a light emitting device according to an embodiment. [Diagram 3] 3A to 3D are diagrams illustrating a light emitting device according to an embodiment. [Figure 4] 4A to 4C are diagrams illustrating a method for manufacturing a light emitting device according to an embodiment. [Diagram 5] 5(A) to 5(C) are diagrams illustrating a method for manufacturing a light emitting device according to an embodiment. [Figure 6] 6A to 6D are diagrams illustrating a method for manufacturing a light emitting device according to an embodiment. [Figure 7] 7A to 7C are diagrams illustrating a light emitting device according to an embodiment. [Figure 8] 8A to 8F are diagrams for explaining a device and a pixel arrangement according to the embodiment. [Figure 9] 9A to 9C are diagrams illustrating a pixel circuit and a transistor according to an embodiment. [Figure 10] FIG. 10 is a diagram illustrating a light emitting device according to an embodiment. [Figure 11] 11A to 11E are diagrams illustrating electronic devices according to an embodiment. [Figure 12] 12A to 12E are diagrams illustrating electronic devices according to an embodiment. [Figure 13] 13A and 13B are diagrams illustrating an electronic device according to an embodiment. [Figure 14] 14(A) and 14(B) are diagrams illustrating an illumination device according to an embodiment. [Figure 15] FIG. 15 is a diagram illustrating a lighting device according to an embodiment. [Figure 16] FIG. 16 is the 1H NMR spectrum of PSiYGA2. [Figure 17] FIG. 17 is the MS spectrum of PSiYGA2. [Figure 18]FIG. 18 is the 1H NMR spectrum of YGABmP. [Figure 19] FIG. 19 is the MS spectrum of YGABmP. [Figure 20] FIG. 20 shows the emission spectra of PSiYGA2, YGABmP, YGA1BP, and YGABP in toluene solutions. [Figure 21] FIG. 21 is the 1H NMR spectrum of PCCz2PSi. [Figure 22] FIG. 22 shows the emission spectra of PCCz2PSi and PCCP in a toluene solution. [Figure 23] FIG. 23 is the 1H NMR spectrum of mCzCz2PSi. [Figure 24] FIG. 24 is the MS spectrum of mCzCz2PSi. [Diagram 25] FIG. 25 shows the absorption and emission spectra of mCzCz2PSi in a toluene solution. [Figure 26] FIG. 26 shows the absorption and emission spectra of a thin film of mCzCz2PSi. [Figure 27] FIG. 27 shows the emission spectra of mCzCz2PSi and PSiCzCz in toluene solutions. [Figure 28] FIG. 28 shows phosphorescence spectra of thin films of mCzCz2PSi and PSiCzCz. [Figure 29] FIG. 29 is a graph showing the luminance-current density characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Diagram 30] FIG. 30 shows the current efficiency-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 2. [Diagram 31] FIG. 31 is a graph showing the power efficiency-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Diagram 32] FIG. 32 shows the external quantum efficiency-luminance characteristics of the light-emitting device 1 and the comparative light-emitting device 2. [Diagram 33]FIG. 33 shows the electroluminescence spectra of Light-Emitting Device 1 and Comparative Light-Emitting Device 2. [Diagram 34] FIG. 34 is a graph showing the luminance-current density characteristics of the light-emitting device 3 and the comparative light-emitting device 4. As shown in FIG. [Diagram 35] FIG. 35 shows the current efficiency-luminance characteristics of the light-emitting device 3 and the comparative light-emitting device 4. [Diagram 36] FIG. 36 shows the electroluminescence spectra of Light-Emitting Device 3 and Comparative Light-Emitting Device 4. [Figure 37] FIG. 37 is a graph showing the luminance-current density characteristics of the light-emitting device 5 and the comparative light-emitting device 6. As shown in FIG. [Figure 38] FIG. 38 is a graph showing the current efficiency-luminance characteristics of the light-emitting device 5 and the comparative light-emitting device 6. As shown in FIG. [Figure 39] FIG. 39 is a graph showing the external quantum efficiency-luminance characteristics of the light-emitting device 5 and the comparative light-emitting device 6. As shown in FIG. [Diagram 40] FIG. 40 shows the electroluminescence spectra of Light-Emitting Device 5 and Comparative Light-Emitting Device 6. [Diagram 41] FIG. 41 is a graph showing the luminance-current density characteristics of the light-emitting device 7 and the comparative light-emitting device 8. As shown in FIG. [Diagram 42] FIG. 42 shows the current efficiency-luminance characteristics of the light-emitting device 7 and the comparative light-emitting device 8. [Diagram 43] FIG. 43 shows the external quantum efficiency-luminance characteristics of the light-emitting device 7 and the comparative light-emitting device 8. [Diagram 44] FIG. 44 shows the electroluminescence spectra of Light-Emitting Device 7 and Comparative Light-Emitting Device 8. [Diagram 45] FIG. 45 is a graph showing the change in luminance of the light-emitting device 7 and the comparative light-emitting device 8 with respect to the driving time. [Diagram 46] FIG. 46 is a graph showing the luminance-current density characteristics of the light-emitting device 9 and the comparative light-emitting device 10. As shown in FIG. [Figure 47] FIG. 47 is a graph showing the current efficiency-luminance characteristics of the light-emitting device 9 and the comparative light-emitting device 10. As shown in FIG. [Figure 48]FIG. 48 is a graph showing the power efficiency-luminance characteristics of the light-emitting device 9 and the comparative light-emitting device 10. As shown in FIG. [Figure 49] FIG. 49 shows the electroluminescence spectra of Light-Emitting Device 9 and Comparative Light-Emitting Device 10. [Figure 50] FIG. 50 is a graph showing the luminance-current density characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 51] FIG. 51 is a graph showing the current efficiency-luminance characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 52] FIG. 52 is a graph showing the luminance-voltage characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 53] FIG. 53 is a graph showing current density-voltage characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 54] FIG. 54 is a graph showing the power efficiency-luminance characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 55] FIG. 55 is a graph showing the external quantum efficiency-luminance characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 56] FIG. 56 is a graph showing the energy efficiency-luminance characteristics of the light-emitting device 11 and the comparative light-emitting device 12. As shown in FIG. [Figure 57] FIG. 57 shows the electroluminescence spectra of light-emitting device 11 and comparative light-emitting device 12. [Figure 58] FIG. 58 shows the bond energy of the Q-R1 bond of each organic compound. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0046] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and the form and details can be changed in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiment shown below.

[0047] In addition, for ease of understanding, the position, size, range, etc. of each component shown in the drawings, etc. may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings, etc.

[0048] In addition, in this specification, ordinal numbers such as first, second, etc. are used for convenience and may not indicate the order of steps or stacking. Therefore, for example, "first" can be appropriately replaced with "second" or "third" to explain. In addition, the ordinal numbers described in this specification may not match the ordinal numbers used to specify one embodiment of the present invention.

[0049] In addition, in this specification and the like, when describing the configuration of the invention using drawings, the same reference numerals may be used in common between different drawings.

[0050] In addition, in this specification and the like, the term "film" and the term "layer" can be interchanged. For example, the term "conductive layer" may be changed to the term "conductive film." Or, for example, the term "insulating film" may be changed to the term "insulating layer."

[0051] In addition, when the term "substituted or (or) unsubstituted" is used in this specification and the like, "substituted" means that the relevant group has a substituent.

[0052] In this specification and the like, hydrogen includes protium and deuterium. Therefore, unless otherwise specified, even if a formula or a sentence simply describes hydrogen, or even if hydrogen is omitted from a chemical formula, the hydrogen is considered to be deuterium.

[0053] In this specification and the like, the singlet excited state (S *) is a singlet state with excitation energy. The S1 level is the lowest singlet excited energy level, and is the lowest singlet excited state excitation energy level. The triplet excited state (T * ) is a triplet state with an excitation energy. The T1 level is the lowest triplet excited energy level, and is the lowest triplet excited state excitation energy level.

[0054] In the present specification and the like, a fluorescent material and a fluorescent compound are materials and compounds that emit light when relaxing from a singlet excited state to a ground state. On the other hand, a phosphorescent material and a phosphorescent compound are materials and compounds that emit light in the visible light region at room temperature when relaxing from a triplet excited state to a ground state. In other words, a phosphorescent material and a phosphorescent compound are one of materials and compounds that can convert triplet excited energy into visible light.

[0055] In this specification and the like, room temperature refers to any temperature between 0°C and 40°C.

[0056] In addition, regarding the S1 level or T1 level of an organic compound, when a ν=0→ν=0 transition (0→0 band) between the ground state and excited state vibrational levels is clearly observed in the fluorescence spectrum or phosphorescence spectrum, it is preferable to calculate using the 0→0 band (see, for example, Non-Patent Document 1). In addition, when the 0→0 band is not clear, a tangent line is drawn at the value where the slope of the short wavelength side of the peak in the fluorescence spectrum is maximum, and the energy of the wavelength at the intersection of the tangent line with the horizontal axis (wavelength) or the baseline is taken as the S1 level, and a tangent line is drawn at the value where the slope of the short wavelength side of the peak in the phosphorescence spectrum is maximum, and the energy of the intersection of the tangent line with the horizontal axis (wavelength) or the baseline is taken as the T1 level (see, for example, Non-Patent Document 2). In addition, when comparing levels, comparison should be made at levels calculated by the same method.

[0057] In the present specification, the blue wavelength region is a wavelength region of 400 nm or more and less than 490 nm, and blue emission is emission having at least one emission spectrum peak in this region. The green wavelength region is a wavelength region of 490 nm or more and less than 580 nm, and green emission is emission having at least one emission spectrum peak in this region. The red wavelength region is a wavelength region of 580 nm or more and 680 nm or less, and red emission is emission having at least one emission spectrum peak in this region. The near-infrared wavelength region is a wavelength region of 700 nm or more and 2500 nm or less, and near-infrared emission is emission having at least one emission spectrum peak in this region.

[0058] In addition, in this specification and the like, when an aromatic ring (including a heteroaromatic ring) A is described, unless otherwise noted, the contents of the description can also be applied to a fused aromatic ring formed by condensing the aromatic ring A with another aromatic ring or a heteroaromatic ring. For example, when an organic compound having a carbazole ring is described, unless otherwise noted, the description can also be applied to an organic compound having a fused aromatic ring such as a benzocarbazole ring or a dibenzocarbazole ring formed by condensing a carbazole ring with a benzene ring.

[0059] The values ​​of the HOMO level and the LUMO level used in this specification can be determined by electrochemical measurements, such as cyclic voltammetry (CV) measurements and differential pulse voltammetry (DPV) measurements.

[0060] Also, as used herein, T g The value of T can be determined using a differential scanning calorimeter (DSC). g In this specification, the T g The temperature at the onset of the endothermic reaction was recorded as the reading.

[0061] (Embodiment 1) In this embodiment, an organic compound of one embodiment of the present invention will be described.

[0062] An organic compound according to one embodiment of the present invention is an organic compound represented by general formula (G1). In the following general formula (G1), an enclosed line indicating a first partial structure (P1), an enclosed line indicating a second partial structure (P2), and an enclosed line indicating a third partial structure (L1) are added for the sake of explanation. The organic compound represented by general formula (G1) has a structure in which the first partial structure (P1) and the second partial structure (P2) are connected via the third partial structure (L1). The main chain of the third partial structure (L1) connecting the first partial structure (P1) and the second partial structure (P2) is sp 3 It is formed by hybrid orbitals (sigma bonds). By forming such a structure, the S1 and T1 levels of the organic compound can be increased.

[0063] [ka]

[0064] In the general formula (G1), Q represents carbon or silicon, and R 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, n represents an integer of 1 to 3, α 1 ~α 4 each independently represents a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenylene group; R 15、 R 25 , R 31 , R 45 , R 55 and R 61 at least one of represents a single bond, and the others each independently represent hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; R 11 ~R 14 , R21 ~R 24 , R 32 ~R 35 , R 41 ~R 44 , R 51 ~R 54 , and R 62 ~R 65 each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, provided that R 15 If is a single bond, R 15 is α 2 It bonds to form a ring. 45 If is a single bond, R 45 is α 4 It also bonds to a ring. 25 and R 31 If both are single bonds, R 25 and R 31 are bonded together to form a ring. 55 and R 61 If both are single bonds, R 55 and R 61 are bonded to each other to form a ring. 25 and R 31 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 2 is a substituted or unsubstituted biphenylene group, R 25 and R 31 One of them is α 2 It bonds to form a ring. 55 and R 61 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 4 is a substituted or unsubstituted biphenylene group, R 55 and R 61 One of them is α 4 It bonds to form a ring.

[0065] In addition, the T of an organic compound can be obtained by simply introducing a chain-like substituent into the organic compound. g However, chain-like substituents are not as effective in improving heat resistance as aromatic groups such as aryl groups and heteroaryl groups. In addition, when multiple chain-like substituents are introduced into an organic compound, the carrier transport property of the organic compound may be impaired. In contrast, the organic compound according to one embodiment of the present invention has a structure in which a first partial structure (P1) and a second partial structure (P2), each of which has an aromatic amine skeleton with good hole transport property, are connected via a third partial structure (L1) having a main chain formed by a sigma bond, and therefore, T g It is possible to provide an organic compound having a high molecular weight, a good hole transporting property, and high S1 level and T1 level.

[0066] In general formula (G1), R 15 When is a single bond, R 15 is α 2 can be combined with R to form a ring. 45 When is a single bond, R 45 Also α 4 By forming a ring in this manner, it is possible to provide an organic compound having higher S1 and T1 levels than when no ring is formed.

[0067] [ka]

[0068] In addition, in the general formula (G1), R 25 and R 31 When both are single bonds, R 25 and R 31 can be bonded to each other to form a ring. 55 and R 61 When both are single bonds, R 55 and R 61can be bonded to each other to form a ring. By forming a ring in this way, it is possible to provide an organic compound having higher S1 and T1 levels than when no ring is formed. In addition, by forming a ring, a molecular structure having a carbazole skeleton is obtained. Since the carbazole skeleton has excellent hole transport properties, it is possible to provide an organic compound having high hole transport properties.

[0069] [ka]

[0070] In addition, in the general formula (G1), R 25 and R 31 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 2 is a substituted or unsubstituted biphenylene group, R 25 and R 31 One of them is α 2 In the following general formula (G1-3-1), R 25 The formula is shown below when R is a single bond. 55 and R 61 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 4 is a substituted or unsubstituted biphenylene group, R 55 and R 61 One of them is α 4 In the following general formula (G1-3-2), R 55 is a single bond. With this structure, the molecular weight increases, and therefore an organic compound with a high glass transition temperature can be provided. In addition, by forming a ring, an organic compound with high S1 and T1 levels can be provided compared to a case where a ring is not formed.

[0071] [ka]

[0072] In general formulas (G1-3-1) and (G1-3-2), R 91 ~R 96 and R 101 ~R 106 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.

[0073] In addition, in the general formula (G1), α 1 and α 3 are each independently a substituted or unsubstituted m-phenylene group, the organic compound has a bulky molecular structure, and therefore an organic compound having a low sublimation temperature and being less susceptible to thermal decomposition during sublimation can be provided.

[0074] Another embodiment of the present invention is an organic compound represented by the following general formulas (G2-1), (G2-2), and (G2-3).

[0075] [ka]

[0076] In the general formulae (G2-1), (G2-2) and (G2-3), Q represents carbon or silicon; R 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, n represents an integer of 1 to 3, α 1 ~α 4 each independently represents a substituted or unsubstituted phenyl group or a substituted or unsubstituted biphenyl group; R 11 ~R 15 , R 21 ~R 25 , R 31 ~R 35 , R 41 ~R 45 , R 51 ~R 55 , R 61~R 65 , R 71 ~R 74 , R 81 ~R 84 , R 91 ~R 96 and R 101 ~R 106 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.

[0077] General formula (G2-1) is R in general formula (G1). 15 , R 45 , R 25 , R 31 , R 55 and R 61 is a single bond, α 2 and α 4 is a substituted or unsubstituted phenylene group, R 15 is α 2 and R 45 is α 4 and R 25 and R 31 are bonded together to form a ring, and R 55 and R 61 are bonded to each other to form a ring. By forming a ring in this way, it is possible to provide an organic compound with higher S1 level and T1 level than when no ring is formed. In addition, since the structure has a carbazole ring with excellent hole transport properties, it is possible to provide an organic compound with high hole transport properties.

[0078] In addition to the above-mentioned constitution, the general formula (G2-1) has the following structure: 1 and α 3 are each independently a substituted or unsubstituted m-phenylene group. With such a structure, the organic compound can be made bulky, and therefore the intermolecular interaction can be reduced. Therefore, it is possible to provide an organic compound that has a low sublimation temperature and is not easily thermally decomposed during sublimation.

[0079] General formula (G2-2) is a group represented by the general formula (G1), 25and R 31 are single bonds and are bonded to each other to form a ring, and R 55 and R 61 are single bonds and are bonded to each other to form a ring. By forming a ring in this way, it is possible to provide an organic compound having high S1 and T1 levels compared to a case where a ring is not formed. In addition, since the structure has a carbazole ring that has excellent hole transport properties, it is possible to provide an organic compound having high hole transport properties.

[0080] General formula (G2-3) is a group represented by the general formula (G1), 31 is a single bond, α 2 is a substituted or unsubstituted biphenylene group, R 31 is α 2 and R 61 is a single bond, α 4 is a substituted or unsubstituted biphenylene group, R 61 is α 4 and bonded to form a ring. With such a structure, the molecular weight increases, and therefore an organic compound with a higher glass transition temperature can be obtained. Furthermore, by forming a ring, an organic compound with higher S1 level and T1 level can be provided compared to a case where a ring is not formed. Furthermore, since the two carbazole rings, which have excellent hole transport properties, are bonded to each other at the 3-position, an organic compound with even higher hole transport properties can be provided.

[0081] Another embodiment of the present invention is an organic compound represented by the following general formulas (G3-1) and (G3-2).

[0082] [ka]

[0083] In the general formulas (G3-1) and (G3-2), Q represents carbon or silicon; 1 and R 2each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, n represents an integer of 1 to 3, α 1 ~α 4 each independently represents a substituted or unsubstituted phenyl group or a substituted or unsubstituted biphenyl group; R 11 ~R 15 , R 21 ~R 25 , R 31 ~R 35 , R 41 ~R 45 , R 51 ~R 55 , R 61 ~R 65 , R 71 ~R 74 , R 81 ~R 84 , R 91 ~R 96 and R 101 ~R 106 each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.

[0084] General formula (G3-1) is the α 1 and α 3 is a substituted or unsubstituted p-phenylene group. 1 and α 3 is a substituted or unsubstituted p-phenylene group.

[0085] In addition, in each of the above general formulas, when Q is silicon, the atomic radius of the silicon atom is larger than that of the carbon atom, so that the steric hindrance between the substituents bonded to Q can be suppressed compared to when Q is carbon. Therefore, the chemical stability of this organic compound against excitation can be improved. By using such an organic compound in a light-emitting device, a long-life light-emitting device characteristic can be expected.

[0086] In addition, in each of the above general formulas, when Q is silicon, the carrier transport property can be improved. By using such an organic compound in a light-emitting device, a reduction in the driving voltage can be expected.

[0087] In addition, in each of the above general formulas, when Q is carbon, R 1 and R 2 The group bonded to Q (i.e., R 1 , R 2 , the first partial structure and the second partial structure) can be suppressed. Therefore, when Q is carbon, for example, R 1 and R 2 are each independently preferably a chain group such as an alkyl group having 1 to 6 carbon atoms, or a cyclic group such as a cycloalkyl group.

[0088] In addition, in each of the above general formulas, R 1 and R 2 Increasing the molecular weight of R increases the molecular weight of the entire organic compound, but if the molecular weight of the entire organic compound is excessively large, the sublimation temperature (or evaporation temperature) becomes too high, and the material may become susceptible to thermal decomposition during deposition. 1 and R 2 When R is an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, the sublimation temperature (or evaporation temperature) of the organic compound can be prevented from becoming too high. 1 and R 2 When each of is independently a methyl group or a phenyl group, the stability of the organic compound can be increased.

[0089] As described above, the glass transition temperature can be increased by increasing the molecular weight of the organic compound of one embodiment of the present invention. On the other hand, if the molecular weight of the organic compound of one embodiment of the present invention is excessively large, the sublimation temperature (or evaporation temperature) becomes too high, and the material may become prone to thermal decomposition during deposition. Therefore, the molecular weight of the organic compound of one embodiment of the present invention is preferably 600 or more and 1500 or less, and more preferably 700 or more and 1300 or less. This makes it possible to provide an organic compound that has a high glass transition temperature and is not prone to thermal decomposition.

[0090] In addition, in each of the above general formulas, when n is 2 or 3, each of the multiple Qs may be the same or different, and each of the multiple R 1 may be the same or different, and multiple R 2 may be the same or different.

[0091] Next, the substituents applicable to each of the above general formulae, that is, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, and an aryl group having 6 to 12 carbon atoms, will be explained and specific examples will be given. Note that the substituents applicable to the above general formulae are not limited to the specific examples given below.

[0092] <Alkyl group having 1 to 6 carbon atoms> In the present specification, an alkyl group having 1 to 6 carbon atoms refers to a linear or branched alkane (C n H 2n+2 (n=1 to 6)) by removing one hydrogen atom. Specific examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, and a 2-methylpentyl group.

[0093] <Cycloalkyl group having 6 to 8 carbon atoms> In the present specification and the like, a cycloalkyl group having 6 to 8 carbon atoms means a cycloalkane (C n H 2n (n=6 to 8)) represents a monovalent group obtained by removing one hydrogen atom from one of the carbon atoms forming a ring. Specific examples of the cycloalkyl group having 6 to 8 carbon atoms include a cyclohexyl group, a cyclooctyl group, and a cycloheptyl group. When the cycloalkyl group having 6 to 8 carbon atoms has a substituent, specific examples of the substituent include an alkyl group having 1 to 6 carbon atoms.

[0094] <Aryl group having 6 to 12 carbon atoms> In this specification, etc., an aryl group having 6 to 12 carbon atoms refers to a monovalent group obtained by removing one hydrogen atom from one of the carbon atoms forming a ring of a monocyclic or polycyclic aromatic compound having 6 to 12 carbon atoms forming the ring. In addition, in this specification, etc., a polycyclic aromatic compound refers to an aromatic compound having two or more ring structures in the molecule, and includes both those in which multiple rings are bonded by single bonds such as biphenyl, and those in which multiple rings are condensed such as naphthalene. Specific examples of the aryl group having 6 to 12 carbon atoms include a phenyl group, a naphthyl group, a fluorenyl group, and a biphenyl group. When the aryl group having 6 to 12 carbon atoms has a substituent, a specific example of the substituent is an alkyl group having 1 to 6 carbon atoms.

[0095] The above are examples of the substituents that can be applied to the above general formula.

[0096] Specific examples of the organic compound of one embodiment of the present invention represented by the above general formula include organic compounds represented by the following structural formulas (100) to (129).

[0097] [ka]

[0098] [ka]

[0099] [ka]

[0100] [ka]

[0101] The organic compounds represented by the above structural formulas (100) to (129) are examples of organic compounds of one embodiment of the present invention; however, one embodiment of the present invention is not limited thereto.

[0102] Note that when an alkyl group such as a tert-butyl group or a methyl group is introduced into an aromatic ring or a heteroaromatic ring of an organic compound according to one embodiment of the present invention, the organic compound becomes bulky, and therefore the sublimation temperature can be lowered, and an organic compound that is less susceptible to thermal decomposition can be provided. Examples of an alkyl group such as a tert-butyl group or a methyl group introduced into an aromatic ring or a heteroaromatic ring include structural formulas (104), (105), (107), (109) to (111), (118), (119), (123), (124), and (125).

[0103] In addition, as in the structural formulae (109) to (111), (114) to (128), and (130) to (135), the sublimation temperature can be adjusted by binding an alkyl group such as a tert-butyl group or a methyl group to the carbon or silicon of the third partial structure (L1) and adjusting the molecular weight.

[0104] Next, a synthesis method of an organic compound represented by General Formula (G1) will be described as an example of an organic compound according to one embodiment of the present invention. Note that the synthesis method of General Formula (G1) can be performed using various reactions and is not limited to the following synthesis method.

[0105] [ka]

[0106] In the general formula (G1), Q represents carbon or silicon; 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, n represents an integer of 1 to 3, α 1 ~α 4 each independently represents a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenylene group; R 15、 R 25 , R 31 , R 45 , R 55 and R 61 at least one of represents a single bond, and the others each independently represent hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; R 11 ~R 14 , R 21 ~R 24 , R 32 ~R 35 , R 41 ~R 44 , R 51 ~R 54 , and R 62 ~R 65 each independently represents hydrogen, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, provided that R 15 If is a single bond, R 15 is α 2 It bonds to form a ring. 45 If is a single bond, R 45 is α 4 It also bonds to a ring. 25 and R 31 If both are single bonds, R 25 and R 31 are bonded together to form a ring. 55 and R 61 If both are single bonds, R55 and R 61 are bonded to each other to form a ring. 25 and R 31 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 2 is a substituted or unsubstituted biphenylene group, R 25 and R 31 One of them is α 2 It bonds to form a ring. 55 and R 61 is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, 4 is a substituted or unsubstituted biphenylene group, R 55 and R 61 One of them is α 4 It bonds to form a ring.

[0107] The organic compound represented by the general formula (G1) can be obtained by cross-coupling reaction of the halogen compound (a1) with the amine compound (a2) and the amine compound (a3). The synthesis scheme (A-1) is shown.

[0108] [ka]

[0109] In the synthetic scheme (A-1), Q and R 1 , R 2 , α 1 ~α 4 , R 15、 R 25 , R 31 , R 45 , R 55 , R 61 , R 11 ~R 14 , R 21 ~R 24 , R 32 ~R 35 , R 41 ~R 45 , R51 ~R 55 , R 61 ~R 65 is the same as the atom or group described above. 1 and X 2 represents a halogen.

[0110] In the synthesis scheme (A-1), specific examples of halogen include chlorine, bromine, and iodine. 1 and X 2 is preferably bromine or iodine, more preferably iodine. This reaction can proceed under various conditions. For example, a synthesis method using a metal catalyst in the presence of a base can be applied. Specifically, Ullmann coupling or Hartwig-Buchwald reaction can be used.

[0111] In addition, when the amine compound (a2) and the amine compound (a3) ​​have different molecular structures, it is preferable to react the amine compound (a2) and the amine compound (a3) ​​in order with the halogen compound (a1) in order to synthesize the product with good purity and yield. On the other hand, when the amine compound (a2) and the amine compound (a3) ​​have the same molecular structure, it is preferable to react two equivalents of the amine compound (a2) with the halogen compound (a1) in order to reduce the number of reaction steps and the synthesis cost.

[0112] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0113] (Embodiment 2) In this embodiment, a structure of a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

[0114] The light-emitting device of one embodiment of the present invention can include an organic compound (hereinafter referred to as a first organic compound) described below. Note that the first organic compound includes the organic compound represented by General Formula (G1) described in Embodiment 1.

[0115] The first organic compound has a first partial structure, a second partial structure, and a third partial structure, the first partial structure and the second partial structure are connected via the third partial structure, at least one of the first partial structure and the second partial structure has a skeleton having carrier transport properties (hole transport properties or electron transport properties, or both), and the third partial structure is an organic compound represented by general formula (L1).

[0116] [ka]

[0117] In the general formula (L1), Q represents carbon or silicon, R 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; and n represents 1 to 3.

[0118] Examples of the skeleton having hole transport properties include π-electron rich heteroaromatic rings and aromatic amine skeletons, and examples of the skeleton having electron transport properties include π-electron deficient heteroaromatic rings. That is, it is preferable that at least one of the first partial structure and the second partial structure has at least one of π-electron rich heteroaromatic rings, aromatic amine skeletons, and π-electron deficient heteroaromatic rings. This allows the first organic compound to be a carrier transport material.

[0119] The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of a pyrrole ring, a furan ring, and a thiophene ring. More specifically, a carbazole ring, a dibenzofuran ring, a dibenzothiophene ring, or a fused aromatic ring in which an aromatic ring or a heteroaromatic ring is further fused to the ... is preferable because it is chemically stable. In particular, a carbazolyl group substituted at the 9-position is preferable because it can increase the S1 level and the T1 level.

[0120] The aromatic amine skeleton is preferably a tertiary amine having no NH bond, and in particular, a triarylamine skeleton is preferable because it has excellent chemical stability during excitation and has good hole transport properties. The aryl group of the triarylamine skeleton is preferably a substituted or unsubstituted aryl group having 6 to 13 carbon atoms forming a ring, such as a phenyl group, a naphthyl group, and a fluorenyl group. In particular, a phenyl group is preferable because it can increase the S1 level and the T1 level.

[0121] It is more preferable that at least one of the first partial structure and the second partial structure has both a π-electron rich heteroaromatic ring and an aromatic amine skeleton, which can provide an organic compound with excellent hole transport properties, stability, and reliability.

[0122] Examples of the π-electron-deficient heteroaromatic ring include an oxadiazole ring, a triazole ring, a benzimidazole ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a phenanthroline ring, a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, and a pyridazine ring), a triazine ring, a fluorodiazine ring, etc. Among these, a skeleton containing a triazine ring or a diazine ring is preferable because it has excellent electron transport properties and is chemically stable when excited.

[0123] Note that a skeleton having carrier transport properties may be applied to both the first partial structure and the second partial structure, but it is not necessary to apply a skeleton having carrier transport properties to either the first partial structure or the second partial structure.

[0124] The first organic compound may be bipolar, i.e., the first partial structure may have at least one of a π-electron rich heteroaromatic ring and an aromatic amine skeleton, and the second partial structure may have a π-electron deficient heteroaromatic ring.

[0125] When a skeleton having carrier transport properties is applied to both the first partial structure and the second partial structure, the carrier transport properties of the organic compound can be further improved. In addition, the molecular weight increases, so that T gIn addition, when the first partial structure and the second partial structure are the same structure of a skeleton having a carrier transport property, it is preferable because the synthesis of the organic compound becomes easy.

[0126] When the skeleton having carrier transportability is not applied to either the first partial structure or the second partial structure, it is preferable to apply a structure capable of increasing the molecular weight of the first organic compound as the partial structure. For example, as a structure capable of increasing the molecular weight of the first organic compound, for example, a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, preferably a phenyl group, can be mentioned. This can increase the heat resistance of the first organic compound.

[0127] As described above, by linking the first partial structure and the second partial structure via the third partial structure represented by general formula (L1) described in embodiment 1, it is possible to provide an organic compound having high heat resistance and high S1 level and T1 level.

[0128] Furthermore, by using the first organic compound having high S1 and T1 levels in the carrier transport layer of a light-emitting device, the characteristics of the light-emitting device can be improved.

[0129] A specific example of a skeleton having carrier transport properties that is preferably applied to at least one of the first partial structure and the second partial structure is a partial structure represented by general formula (T1).

[0130] [ka]

[0131] In general formula (T1), α 1 and α 2 each independently represents a substituted or unsubstituted arylene group having 6 to 12 carbon atoms; Ar 1 ~Ar 3 Each independently represents a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. 1and α 2 may or may not be bonded to each other to form a ring. 2 and Ar 2 may or may not be bonded to each other to form a ring. 2 and Ar 3 may or may not be bonded to each other to form a ring.

[0132] The partial structure represented by the general formula (T1) has at least one of a π-electron-rich heteroaromatic ring and an aromatic amine skeleton. Therefore, by applying the partial structure represented by the general formula (T1), the first organic compound can be made into a hole transporting material.

[0133] In addition, when a skeleton having carrier transport properties is applied to both the first partial structure and the second partial structure, the heat resistance of the first organic compound can be improved and the carrier transport properties of the first organic compound can be further improved. Therefore, a specific example of the first organic compound is an organic compound represented by the general formula (G0).

[0134] [ka]

[0135] In the general formula (G0), Q represents carbon or silicon, R 1 and R 2 each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, and n represents 1 to 3. 1 ~α 4 each independently represents a substituted or unsubstituted arylene group having 6 to 12 carbon atoms; Ar 1 ~Ar 6 Each independently represents a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. 1 and α 2 Comrade, α 2 and Ar 2 Fellow, Ar 2 and Ar 3One or more of the Ar groups may or may not be bonded to each other to form a ring. 4 and α 4 Comrade, α 4 and Ar 5 Fellow, Ar 5 and Ar 6 One or more of them may or may not be bonded to each other to form a ring.

[0136] In the organic compound represented by general formula (G0), a skeleton having carrier transport properties is applied to both the first partial structure and the second partial structure, and these are bonded via the partial structure represented by general formula (L1). This can increase the heat resistance of the first organic compound and further increase the carrier transport properties of the first organic compound.

[0137] In general formula (T1) and general formula (G0), α 1 ~α 4 It is more preferable that each independently represents a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenylene group. 1 ~Ar 6 More preferably, each of is independently a substituted or unsubstituted phenyl group. This makes it possible to provide an organic compound that has a low sublimation temperature and is unlikely to be thermally decomposed during sublimation.

[0138] In addition, in the general formula (T1) and the general formula (G0), Ar 1 and α 2 Comrade, α 2 and Ar 2 Fellow, Ar 2 and Ar 3 It is more preferable that one or more of the Ar groups are bonded to each other to form a ring. 4 and α 4 Comrade, α 4 and Ar 5 Fellow, Ar 5 and Ar 6It is more preferable that one or more of them are bonded to each other to form a ring, which forms a π-electron-rich heteroaromatic ring such as a carbazole ring in the general formula (T1), thereby enhancing the hole transport property of the first organic compound.

[0139] Next, an arylene group having 6 to 12 carbon atoms that can be applied to the general formula (T1) and the general formula (G0) will be explained, and specific examples will be given. Note that the alkyl group having 1 to 6 carbon atoms, the substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, and the aryl group having 6 to 12 carbon atoms, which are the substituents that can be applied to the general formula (T1) and the general formula (G0), are the same as those explained in the embodiment 1. Note that the substituents that can be applied to the above general formulas are not limited to the specific examples given below.

[0140] <Arylene group having 6 to 12 carbon atoms> In this specification and the like, an arylene group having 6 to 12 carbon atoms refers to a divalent group obtained by removing one hydrogen atom from one of the carbon atoms forming a ring of an aryl group having 6 to 12 carbon atoms. Specific examples of the arylene group having 6 to 12 carbon atoms include a 1,4-phenylene group, a 1,3-phenylene group, and a 4,4'-biphenylene group. When the arylene group having 6 to 12 carbon atoms has a substituent, specific examples of the substituent include an alkyl group having 1 to 6 carbon atoms.

[0141] The above-mentioned first organic compound (including the organic compound represented by General Formula (G1) described in the first embodiment) has a carrier transport property. Therefore, by using the first organic compound in one or more of the layers (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, and electron injection layer) of the light-emitting device described later, the characteristics of the light-emitting device can be improved.

[0142] In the case where the above-mentioned first organic compound has a hole transport property, the first organic compound can be used in one or more of a hole injection layer, a hole transport layer, and a light-emitting layer, which will be described later, to facilitate the transport of holes in the EL layer 103, thereby improving the luminous efficiency of the light-emitting device 100.

[0143] In the case where the first organic compound has electron transport properties, the first organic compound can be used in one or more of the light-emitting layer, the electron transport layer, and the electron injection layer described below, which facilitates the transport of electrons in the EL layer, thereby improving the luminous efficiency of the light-emitting device.

[0144] Note that the first organic compound may be a bipolar substance (a substance having high electron-transporting and hole-transporting properties).

[0145] In addition, it is preferable that the first organic compound has high heat resistance. When crystallization of the EL layer is a problem, such a configuration can prevent the crystallization of the EL layer, thereby improving the brightness and reliability of the light-emitting device.

[0146] The first organic compound has high heat resistance and high S1 and T1 levels, and is therefore a particularly effective material when the light-emitting substance in the light-emitting layer has a short emission wavelength (e.g., blue light emission). The first organic compound can provide high energy to a light-emitting substance with a short emission wavelength, and therefore can increase the luminous efficiency of the light-emitting device.

[0147] <Basic structure of light-emitting devices> The basic structure of a light-emitting device will be described. Figure 1(A) shows a light-emitting device having an organic compound layer (EL layer) including a light-emitting layer between a pair of electrodes. Specifically, the device has a structure in which an EL layer 103 is sandwiched between a first electrode 101 and a second electrode 102.

[0148] 1B shows a light-emitting device having a stacked structure (tandem structure) in which a plurality of EL layers (103a, 103b in FIG. 1B) are disposed between a pair of electrodes and a charge generating layer 106 is disposed between the EL layers. A light-emitting device having a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0149] The charge generation layer 106 has a function of injecting electrons into one EL layer (103a or 103b) and injecting holes into the other EL layer (103b or 103a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Therefore, in FIG. 1B, when a voltage is applied to the first electrode 101 so that the potential is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the EL layer 103a and holes are injected into the EL layer 103b.

[0150] From the viewpoint of light extraction efficiency, the charge generation layer 106 is preferably transparent to visible light (specifically, the visible light transmittance of the charge generation layer 106 is 40% or more). The charge generation layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102.

[0151] FIG. 1C shows a stacked structure of an EL layer 103 of a light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode. The EL layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are stacked in this order over the first electrode 101. Note that the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having different light emission colors are stacked. For example, a light-emitting layer containing a light-emitting substance that emits red light, a light-emitting layer containing a light-emitting substance that emits green light, and a light-emitting layer containing a light-emitting substance that emits blue light may be stacked, or may have a structure in which the light-emitting layers are stacked with a layer having a carrier transport material interposed therebetween. Alternatively, a light-emitting layer containing a light-emitting substance that emits yellow light and a light-emitting layer containing a light-emitting substance that emits blue light may be combined. However, the stacked structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which a plurality of light-emitting layers having the same light-emitting color are stacked. For example, a first light-emitting layer containing a light-emitting material that emits blue light and a second light-emitting layer containing a light-emitting material that emits blue light may be stacked, or a layer having a carrier transporting material may be interposed between the first light-emitting layer and the second light-emitting layer. In the case of a structure in which a plurality of light-emitting layers having the same light-emitting color are stacked, reliability may be improved more than a single-layer structure. In addition, even in the case of a tandem structure having a plurality of EL layers as shown in FIG. 1B, each EL layer is stacked in order from the anode side as described above. In addition, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the EL layer 103 is reversed. Specifically, the structure is such that 111 on the first electrode 101, which is a cathode, is an electron injection layer, 112 is an electron transport layer, 113 is a light-emitting layer, 114 is a hole transport layer, and 115 is a hole injection layer.

[0152] The light-emitting layer 113 included in the EL layers (103, 103a, 103b) each contains a light-emitting substance and a plurality of other substances in appropriate combination. Also, a structure in which different light-emitting colors are obtained from the plurality of EL layers (103a, 103b) shown in FIG. 1B may be used. In this case, the light-emitting substance and other substances used in each light-emitting layer may be different materials.

[0153] In a light-emitting device according to one embodiment of the present invention, for example, the first electrode 101 shown in FIG. 1C is a reflective electrode, the second electrode 102 is a semi-transmissive and semi-reflective electrode, and a micro-optical resonator (microcavity) structure is formed. This allows light emission from the light-emitting layer 113 included in the EL layer 103 to resonate between the two electrodes, thereby enhancing the light emission emitted from the second electrode 102.

[0154] In addition, when the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a conductive material having reflectivity and a conductive material having light transmission (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to mλ / 2 (where m is an integer of 1 or more) or its vicinity, for the wavelength λ of light obtained from the light-emitting layer 113.

[0155] In order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained to (2m'+1)λ / 4 (where m' is an integer of 0 or more) or close thereto. Note that the light-emitting region here refers to a recombination region of holes and electrons in the light-emitting layer 113.

[0156] By carrying out such optical adjustment, it is possible to narrow the spectrum of the specific monochromatic light obtained from the light-emitting layer 113, and to obtain light emission with excellent color purity.

[0157] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be strictly said to be the total thickness from the reflection area in the first electrode 101 to the reflection area in the second electrode 102. However, since it is difficult to strictly determine the reflection area in the first electrode 101 and the second electrode 102, it is assumed that the above-mentioned effect can be sufficiently obtained by assuming any position of the first electrode 101 and the second electrode 102 as the reflection area. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can be strictly said to be the optical distance between the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer from which the desired light is obtained. However, since it is difficult to strictly determine the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer from which the desired light is obtained, it is assumed that the above-mentioned effect can be sufficiently obtained by assuming any position of the first electrode 101 as the reflection area and any position of the light-emitting layer from which the desired light is obtained as the light-emitting area.

[0158] FIG. 1(D) shows a modified example of the laminated structure shown in FIG. 1(C). In this modification, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode. In this modification, the hole transport layer 112 and the electron transport layer 114 each have a laminated structure of two layers. That is, the EL layer 103 has a structure in which the hole injection layer 111, the first hole transport layer 112-1, the second hole transport layer 112-2, the light-emitting layer 113, the second electron transport layer 114-2, the first electron transport layer 114-1, and the electron injection layer 115 are sequentially laminated on the first electrode 101. The light-emitting layer 113 is located between the first electrode 101 and the second electrode 102. The first hole transport layer 112-1 is located between the first electrode 101 and the light-emitting layer 113. The first electron transport layer 114-1 is located between the light emitting layer 113 and the second electrode 102. The hole injection layer 111 is located between the first electrode 101 and the hole transport layer 112. The electron injection layer 115 is located between the electron transport layer 114 and the second electrode 102. The second hole transport layer 112-2 is located between the first hole transport layer 112-1 and the light emitting layer 113. In other words, the second electron transport layer 114-2 is located between the light emitting layer 113 and the first electron transport layer 114-1. When the EL layer 103 has such a laminated structure, it is preferable that any one or more of the hole injection layer 111, the hole transport layer 112, and the light emitting layer 113 have the first organic compound.

[0159] The second hole transport layer 112-2 is provided, for example, for the purpose of preventing electrons from passing through from the light emitting layer 113 to the first electrode 101 side. Therefore, the second hole transport layer 112-2 can also be called an electron blocking layer. The second electron transport layer 114-2 is provided, for example, for the purpose of preventing holes from passing through from the light emitting layer 113 to the second electrode 102 side. Therefore, the second electron transport layer 114-2 can also be called a hole blocking layer.

[0160] The light-emitting device shown in FIG. 1(E) is a light-emitting device having a tandem structure, and since it has a microcavity structure, it is possible to extract light of different wavelengths (monochromatic light) from each EL layer (103a, 103b). Therefore, it is not necessary to paint different colors (e.g., RGB) to obtain different luminescent colors. Therefore, it is easy to realize high definition. It is also possible to combine it with a colored layer (color filter). Furthermore, it is possible to increase the luminescent intensity of a specific wavelength in the front direction, which allows for low power consumption.

[0161] The light-emitting device shown in FIG. 1(F) is an example of the light-emitting device with the tandem structure shown in FIG. 1(B), and has a structure in which three EL layers (103a, 103b, 103c) are stacked with charge generating layers (106a, 106b) sandwiched therebetween, as shown in the figure. The three EL layers (103a, 103b, 103c) each have a light-emitting layer (113a, 113b, 113c), and the light-emitting colors of the light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be red, green, or yellow, and the light-emitting layer 113c can be blue, but it is also possible to make the light-emitting layer 113a red, the light-emitting layer 113b blue, green, or yellow, and the light-emitting layer 113c red.

[0162] 2 is a schematic diagram of a light-emitting device including a light-emitting device 100A and a light-emitting device 100B which are light-emitting devices according to one embodiment of the present invention. Each of the light-emitting device 100A and the light-emitting device 100B is a light-emitting device in which a part of an organic compound layer (EL layer) is processed by a lithography method.

[0163] The light-emitting device 100A is located on the insulating layer 175 and has a first electrode 101A including an anode, a second electrode 102 including a cathode, and an EL layer 103A. The EL layer 103A is located between the first electrode 101A and the second electrode 102. The EL layer 103A has at least an emitting layer 113A. The emitting layer 113A also has at least a light-emitting material. FIG. 2 shows an example in which the EL layer 103A has a hole injection layer 111A, a hole transport layer 112A, an electron transport layer 108A, and an electron injection layer 109 in addition to the emitting layer 113A. That is, the EL layer 103A shown in FIG. 2 has the hole injection layer 111A, the hole transport layer 112A, the emitting layer 113A, the electron transport layer 108A, and the electron injection layer 109 in this order.

[0164] The light-emitting device 100B is located on the insulating layer 175 and has a first electrode 101B including an anode, a second electrode 102 including a cathode, and an EL layer 103B. The EL layer 103B is located between the first electrode 101B and the second electrode 102. The EL layer 103B has at least an emitting layer 113B. The emitting layer 113B also has at least a light-emitting material. FIG. 2 shows an example in which the EL layer 103B has a hole injection layer 111B, a hole transport layer 112B, an electron transport layer 108B, and an electron injection layer 109 in addition to the emitting layer 113B. That is, the EL layer 103B shown in FIG. 2 has the hole injection layer 111B, the hole transport layer 112B, the emitting layer 113B, the electron transport layer 108B, and the electron injection layer 109 in this order.

[0165] By using a first organic compound in either or both of the EL layer 103A of the light-emitting device 100A and the EL layer 103B of the light-emitting device 100B, it is possible to obtain the same effect as when the first organic compound is used in the EL layer 103 of the light-emitting device 100 shown in Figure 1 (A).

[0166] In the light-emitting device 100A, each layer of the EL layer 103A other than the electron injection layer 109 is processed by a lithography method. Therefore, each layer of the EL layer 103A other than the electron injection layer 109 is independent of the adjacent light-emitting device, the light-emitting device 100B. In addition, the ends (contours) of each layer of the EL layer 103A other than the electron injection layer 109 are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the ends of the hole injection layer 111A, the hole transport layer 112A, the light-emitting layer 113A, and the electron transport layer 108A are independent of the hole injection layer 111B, the hole transport layer 112B, the light-emitting layer 113B, and the electron transport layer 108B. In addition, the ends (contours) of the hole injection layer 111A, the hole transport layer 112A, the light-emitting layer 113A, and the electron transport layer 108A are aligned or approximately aligned in a direction perpendicular to the substrate.

[0167] In the light-emitting device 100B, each layer of the EL layer 103B other than the electron injection layer 109 is processed by a lithography method. Therefore, each layer of the EL layer 103B other than the electron injection layer 109 is independent of the adjacent light-emitting device, the light-emitting device 100A. In addition, the ends (contours) of each layer of the EL layer 103B other than the electron injection layer 109 are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the ends of the hole injection layer 111B, the hole transport layer 112B, the light-emitting layer 113B, and the electron transport layer 108B are independent of the hole injection layer 111A, the hole transport layer 112A, the light-emitting layer 113A, and the electron transport layer 108A. In addition, the ends (contours) of the hole injection layer 111A, the hole transport layer 112A, the light-emitting layer 113A, and the electron transport layer 108A are aligned or approximately aligned in a direction perpendicular to the substrate.

[0168] The electron injection layer 109 and the second electrode 102 are preferably formed after each layer of the EL layer 103A other than the electron injection layer 109 and each layer of the EL layer 103B other than the electron injection layer 109 are processed by a lithography method. In other words, the electron injection layer 109 and the second electrode 102 are preferably a continuous layer shared by the light-emitting device 100A and the light-emitting device 100B.

[0169] It is preferable to use a donor substance (also called an electron donor) in the electron injection layer 109, since this can reduce the voltage of the light-emitting device. Typical examples of donor substances include alkali metals such as lithium (Li) having a small work function, or compounds of the alkali metals.

[0170] When an electron injection layer containing such a donor substance is processed by lithography as the uppermost surface (or interface) of an EL layer, the influence of oxygen or water in the atmosphere, or chemicals or water during the process may cause a significant increase in the driving voltage or a significant decrease in the current efficiency in the light-emitting device. However, in one embodiment of the present invention, the electron injection layer 109 is formed after each layer other than the electron injection layer 109 is processed by lithography, so that even if a donor substance is used for the electron injection layer 109, deterioration of the characteristics of the light-emitting device can be avoided.

[0171] By processing the EL layer by lithography, the distance d between each layer other than the electron injection layer 109 of the EL layer 103a and each layer other than the electron injection layer 109 of the EL layer 103b can be narrowed compared to when performing mask deposition. Specifically, the distance d can be narrowed to less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. In addition, by using an exposure device for LSI, for example, in a process on a Si wafer, the distance d can be narrowed to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less.

[0172] In addition, it is preferable that a partition wall 128 is provided in the gap between each layer other than the electron injection layer 109 of the EL layer 103a and each layer other than the electron injection layer 109 of the EL layer 103b. Each layer other than the electron injection layer 109 of the EL layer 103A can be separated from each layer other than the electron injection layer 109 of the EL layer 103B. In this case, it can be said that the partition wall 128 is provided in a region surrounded by the insulating layer 175, the end of each layer other than the electron injection layer 109 of the EL layer 103A, the electron injection layer 109, and the end of each layer other than the electron injection layer 109 of the EL layer 103B. In this case, it can be said that there is a region in which the partition wall 128 and the electron injection layer 109 or the second electrode 102 are in contact with each other. 2, the partition 128 contacts the end of each layer other than the electron injection layer 109 of the EL layer 103A and the end of each layer other than the electron injection layer 109 of the EL layer 103B, but is not limited to this configuration. For example, an insulating layer may be provided at each of the ends of each layer other than the electron injection layer 109 of the EL layer 103A and the end of each layer other than the electron injection layer 109 of the EL layer 103B, and the partition 128 may be located at the end of each layer other than the electron injection layer 109 of the EL layer 103A and the end of each layer other than the electron injection layer 109 of the EL layer 103B via the insulating layer.

[0173] When the EL layer is processed by lithography, as in light-emitting device 100A and light-emitting device 100B, the processed surface of the EL layer other than electron injection layer 109 is exposed to oxygen or water in the atmosphere, chemicals or water during processing, heat treatment, etc. This can cause problems with crystallization of the EL layer, which can reduce the reliability and brightness of the light-emitting device. This tendency is seen when the organic compound used in the light-emitting device has low heat resistance, so when processing is performed by lithography, it is necessary to add T to the EL layer. g It is preferable to use a first organic compound having a high T g By using the first organic compound having a high thermal conductivity, it is possible to prevent changes in the film thickness of the EL layer due to heating, heat generation, etc., and changes in the film quality such as crystallization, thereby improving the brightness and reliability of the light-emitting device 100A and the light-emitting device 100B.

[0174] T of the first organic compound gis preferably 100° C. or higher, more preferably 110° C. or higher, 120° C. or higher, 130° C. or higher, or 140° C. or higher. This makes it possible to suppress changes in film quality even when the processed surface of the EL layer is exposed to oxygen or water in the atmosphere, chemicals or water during processing, heat treatment, etc. Therefore, the reliability of the light-emitting device 100 can be improved.

[0175] In the light-emitting device according to one embodiment of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is an electrode having translucency (such as a transparent electrode or a semi-transparent / semi-reflective electrode). When the electrode having translucency is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. When the electrode is a semi-transparent / semi-reflective electrode, the visible light reflectance of the semi-transparent / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, these electrodes have a resistivity of 1×10 -2 It is preferable to set it to Ωcm or less.

[0176] In the above-described light-emitting device according to one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%. -2 It is preferable to set it to Ωcm or less.

[0177] <Specific structure of light-emitting device> Next, a specific structure of the light-emitting device according to one embodiment of the present invention will be described. In addition, a tandem structure will be described here with reference to FIG. 1(E). The single-structure light-emitting devices shown in FIG. 1(A) and FIG. 1(C) also have the same EL layer structure. When the light-emitting device shown in FIG. 1(E) has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive and semi-reflective electrode. Therefore, a single or multiple desired electrode materials can be used to form a single layer or a stacked layer. The second electrode 102 is formed by selecting an appropriate material after the EL layer 103b is formed.

[0178] <First Electrode and Second Electrode> As the material for forming the first electrode 101 and the second electrode 102, the following materials can be used in appropriate combination as long as the above-mentioned functions of both electrodes are satisfied. For example, metals, alloys, electrically conductive compounds, and mixtures thereof can be used appropriately. Specific examples include In-Sn oxide (also called ITO), In-Si-Sn oxide (also called ITSO), In-Zn oxide, and In-W-Zn oxide. In addition, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing these in appropriate combinations, can also be used. Other examples that can be used include elements belonging to Group 1 or 2 of the periodic table (e.g., lithium (Li), cesium (Cs), calcium (Ca), and strontium (Sr)) that are not listed above, rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing appropriate combinations of these, as well as graphene.

[0179] 1(E), when the first electrode 101 is an anode, the hole injection layer 111a and the hole transport layer 112a of the EL layer 103a are successively laminated by vacuum deposition on the first electrode 101. After the EL layer 103a and the charge generation layer 106 are formed, the hole injection layer 111b and the hole transport layer 112b of the EL layer 103b are similarly successively laminated on the charge generation layer 106.

[0180] In addition, in the light-emitting device shown in FIG. 1(E), the first electrode 101 is a reflective electrode, the second electrode 102 is a semi-transmissive and semi-reflective electrode, and a micro-optical resonator (microcavity) structure is formed. This makes it possible to resonate light emitted from the light-emitting layer 113 included in the EL layer 103 between the two electrodes, thereby enhancing the light emitted from the second electrode 102.

[0181] In addition, when the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a conductive material having reflectivity and a conductive material having light transmission (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to mλ / 2 (where m is an integer of 1 or more) or its vicinity, for the wavelength λ of light obtained from the light-emitting layer 113.

[0182] In order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained to (2m'+1)λ / 4 (where m' is an integer of 1 or more) or close thereto. Note that the light-emitting region referred to here refers to a recombination region of holes and electrons in the light-emitting layer 113.

[0183] By carrying out such optical adjustment, it is possible to narrow the spectrum of the specific monochromatic light obtained from the light-emitting layer 113, and to obtain light emission with excellent color purity.

[0184] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be strictly said to be the total thickness from the reflection area in the first electrode 101 to the reflection area in the second electrode 102. However, since it is difficult to strictly determine the reflection area in the first electrode 101 and the second electrode 102, it is assumed that the above-mentioned effect can be sufficiently obtained by assuming any position of the first electrode 101 and the second electrode 102 as the reflection area. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which the desired light is obtained can be strictly said to be the optical distance between the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer from which the desired light is obtained. However, since it is difficult to strictly determine the reflection area in the first electrode 101 and the light-emitting area in the light-emitting layer from which the desired light is obtained, it is assumed that the above-mentioned effect can be sufficiently obtained by assuming any position of the first electrode 101 as the reflection area and any position of the light-emitting layer from which the desired light is obtained as the light-emitting area.

[0185] In the light-emitting device according to one embodiment of the present invention described above, at least one of the first electrode 101 and the second electrode 102 is an electrode having translucency (such as a transparent electrode or a semi-transparent / semi-reflective electrode). When the electrode having translucency is a transparent electrode, the visible light transmittance of the transparent electrode is 40% or more. When the electrode is a semi-transparent / semi-reflective electrode, the visible light reflectance of the semi-transparent / semi-reflective electrode is 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, these electrodes have a resistivity of 1×10 -2 It is preferable to set it to Ωcm or less.

[0186] In the above-described light-emitting device according to one embodiment of the present invention, when one of the first electrode 101 and the second electrode 102 is a reflective electrode (reflective electrode), the electrode has a visible light reflectance of 40% to 100%, preferably 70% to 100%. -2 It is preferable to set it to Ωcm or less.

[0187] <Hole injection layer> The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101, which is an anode, and the charge generation layer (106, 106a, 106b) to the EL layer (103, 103a, 103b), and is a layer that contains an organic acceptor material and a material with high hole injection properties.

[0188] An organic acceptor material is a material that can generate holes in an organic compound by charge separation between the organic compound and another organic compound whose LUMO level and HOMO level are close to each other. Therefore, compounds having an electron-withdrawing group (halogen group or cyano group), such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives, can be used as organic acceptor materials. For example, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, and the like can be used. Among organic acceptor materials, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having multiple heteroatoms, such as HAT-CN, are particularly suitable because they have high acceptability and stable film quality against heat. In addition, radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group or a cyano group) [3] are also preferred because they have very high electron-accepting properties, and specifically, α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile], etc. can be used.

[0189] As a material with high hole injection properties, an oxide of a metal belonging to Groups 4 to 8 in the periodic table (transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide) can be used. Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among the above, molybdenum oxide is preferred because it is stable in the air, has low hygroscopicity, and is easy to handle. In addition, perylene tetracarboxylic acid derivatives such as diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA-F6), 3,4,9,10-perylene tetracarboxylic diimide (abbreviation: PTCDI), and 3,4,9,10-perylene tetracarboxyl-bis-benzimidazole (abbreviation: PTCBI), (C 60 -Ih)[5,6]fullerene (abbreviation: C 60 ), (C 70 -D5h)[5,6]fullerene (abbreviation: C 70 ), organic compounds such as phthalocyanine (abbreviation: HPc), copper phthalocyanine (abbreviation: CuPc), zinc phthalocyanine (abbreviation: ZnPc), cobalt phthalocyanine (abbreviation: CoPc), iron phthalocyanine (abbreviation: FePc), tin phthalocyanine (abbreviation: SnPc), tin oxide phthalocyanine (abbreviation: SnOPc), titanium oxide phthalocyanine (abbreviation: TiOPc), vanadium oxide phthalocyanine (abbreviation: VOPc), and metal phthalocyanines having copper, zinc, cobalt, iron, chromium, nickel, and the like, and derivatives thereof can be used. In particular, phthalocyanine-based metal complexes such as CuPc or ZnPc or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine are preferred. Among them, CuPc and ZnPc are preferred because they are inexpensive and have good characteristics. Furthermore, ZnPc has a small diffusion coefficient into silicon, which reduces the risk of affecting the semiconductor characteristics due to diffusion of metal into the semiconductor, making it particularly suitable for use in display devices that use silicon semiconductors.

[0190] In addition to the above materials, the following low molecular weight compounds are also available: 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), N,N'-bis[4-bis(3-methylphenyl)aminophenyl]-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: DNTPD), 1,3,5-tris[N Aromatic amine compounds such as -(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), 3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), and 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1) can be used.

[0191] Also, polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD), etc. can be used. Alternatively, polymer compounds to which an acid has been added, such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid (abbreviation: PEDOT / PSS), polyaniline / polystyrenesulfonic acid (abbreviation: PAni / PSS), etc. can also be used.

[0192] As the material with high hole injection properties, a mixed material containing a hole transport material and the above-mentioned organic acceptor material (electron accepting material) can also be used. In this case, electrons are extracted from the hole transport material by the organic acceptor material, generating holes in the hole injection layer 111, and the holes are injected into the light emitting layer 113 via the hole transport layer 112. The hole injection layer 111 may be formed as a single layer made of a mixed material containing a hole transport material and an organic acceptor material (electron accepting material), or may be formed by laminating the hole transport material and the organic acceptor material (electron accepting material) in separate layers.

[0193] In addition, the hole transport material has a hole mobility of 1×10 at a square root of the electric field strength [V / cm] of 600. -6 cm 2 A substance having a hole mobility of / Vs or more is preferable. Note that other substances can be used as long as they have a higher hole transporting property than an electron transporting property.

[0194] As the hole transporting material, a material having a high hole transporting property such as a compound having a π-electron-rich heteroaromatic ring (for example, a carbazole derivative, a furan derivative, or a thiophene derivative) and an aromatic amine (an organic compound having an aromatic amine skeleton) is preferable. When the first organic compound has a hole transporting property, it can be used as the hole transporting material.

[0195] Examples of the carbazole derivative (organic compound having a carbazole ring) include bicarbazole derivatives (for example, 3,3'-bicarbazole derivatives) and aromatic amines having a carbazolyl group.

[0196] Specific examples of the bicarbazole derivative (e.g., 3,3'-bicarbazole derivative) include 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), and 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP).

[0197] Specific examples of the aromatic amine having a carbazolyl group include 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBiF), and Name: PCBBiF), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]bis(9,9-dimethyl-9H-fluoren-2-yl)amine (abbreviation: PCBFF), N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-(9,9-dimethyl-9H-fluoren-2-yl)-9,9-dimethyl-9H-fluorene -4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-diphenyl-9H-fluoren-4-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluorene )-2-amine, N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi(9H-fluoren)-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-Dimethyl-9H-fluoren-2-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':3',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-(1,1':4',1''-terphenyl-4-yl)-9,9-dimethyl-9H-fluoren-4-amine, 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 4-phenyldiphenyl-(9-phenyl-9H-carbazol-3-yl)amine (abbreviation: PCA1BP), N,N'-bis(9-phenylcarbazol-3-yl)-N,N'-diphenylbenzene-1,3-diamine (abbreviation: PCA2B), N,N',N''-triphenyl-N,N',N''-tris(9-phenylcarbazol-3-yl)benzene-1,3,5-triamine (abbreviation: PCA3B), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 3-[N-(9-phenyl 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 3-[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA1), 3,6-Bis[N-(4-diphenylaminophenyl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzDPA2), 3,6-bis[N-(4-diphenylaminophenyl)-N-(1-naphthyl)amino]-9-phenylcarbazole (abbreviation: PCzTPN2), N-(9,9-spirobi[9H-fluoren]-2-yl)-N,9-diphenylcarbazole-3-amine (abbreviation: PCASF), N-(4-biphenyl)-4-(carbazol-9-yl)phenylaniline (abbreviation: YGA1BP), N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenyl-9,9-dimethylfluorene-2,7-diamine (abbreviation: YGA2F), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA), etc.

[0198] In addition to the above, examples of the carbazole derivative include 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PCPPn), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), and 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA).

[0199] Specific examples of the furan derivatives (organic compounds having a furan ring) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), and the like.

[0200] Specific examples of the thiophene derivatives (organic compounds having a thiophene ring) include 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV).

[0201] Specific examples of the aromatic amine include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP ... Phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), N-(9,9-dimethyl-9H-fluoren-2-yl)-N-{9,9-dimethyl-2-[N'-phenyl-N'-(9,9-dimethyl-9H-fluoren-2-yl)amino]-9H-fluoren-7-yl}phenylamine (abbreviation: DFLADFL), N-(9,9-dimethyl-2-diphenylamino-9H-fluoren-7-yl)diphenylamine (abbreviation: DPNF), N-(9,9-spirobi[9H-fluoren]-2-yl) -N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: DPASF), N,N'-diphenyl-N,N'-bis(4-diphenylaminophenyl)spirobi[9H-fluorene]-2,7-diamine (abbreviation: DPA2SF), 4,4',4''-tris[N-(1-naphthyl)-N-phenylamino]triphenylamine (abbreviation: 1'-TNATA), 4,4',4''-tris(N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3-methylphenyl)-N-phenyla amino]triphenylamine (abbreviation: m-MTDATA), N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), DNTPD, 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2- d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4', 4''-Diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4''-( 7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-Dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), N,N-bis(9,9-dimethyl-9H-fluorene-2- N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, and the like can be mentioned.

[0202] Other examples of the hole transport material that can be used include polymer compounds (oligomers, dendrimers, polymers, etc.) such as poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (abbreviation: Poly-TPD), etc. Alternatively, polymer compounds to which an acid has been added, such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid (abbreviation: PEDOT / PSS) and polyaniline / polystyrenesulfonic acid (abbreviation: PAni / PSS), etc., can also be used.

[0203] However, the hole transporting material is not limited to the above, and one or a combination of various known materials may be used as the hole transporting material.

[0204] The hole injection layers (111, 111a, 111b) can be formed using various known film formation methods, for example, a vacuum deposition method.

[0205] <Hole transport layer> The hole transport layers (112, 112a, 112b) are layers that transport holes injected from the first electrode 101 by the hole injection layers (111, 111a, 111b) to the light emitting layers (113, 113a, 113b). The hole transport layers (112, 112a, 112b) are layers that contain a hole transport material. Therefore, the hole transport materials that can be used for the hole injection layers (111, 111a, 111b) can be used for the hole transport layers (112, 112a, 112b).

[0206] In the light-emitting device according to one embodiment of the present invention, the light-emitting layer (113, 113a, 113b) can be formed using the same organic compound as that of the hole-transport layer (112, 112a, 112b). It is more preferable to use the same organic compound for the hole-transport layer (112, 112a, 112b) and the light-emitting layer (113, 113a, 113b) because holes can be efficiently transported from the hole-transport layer (112, 112a, 112b) to the light-emitting layer (113, 113a, 113b).

[0207] <Light-emitting layer> The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting substance. As the light-emitting substance that can be used for the light-emitting layers (113, 113a, 113b), a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red can be appropriately used. When the light-emitting layer has a plurality of light-emitting layers, a structure that emits different light colors (for example, white light emission obtained by combining light-emitting colors that are complementary to each other) can be obtained by using different light-emitting substances for each light-emitting layer. When the light-emitting layer has a plurality of light-emitting layers, each light-emitting layer can be configured to emit the same color. In the case of a structure in which a plurality of light-emitting layers that emit the same light color are stacked, reliability may be improved more than in a single-layer structure. Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances may be used.

[0208] Furthermore, the light-emitting layers (113, 113a, 113b) may contain one or more types of organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0209] In addition, when a plurality of host materials are used in the light-emitting layer (113, 113a, 113b), it is preferable to use a substance having a larger energy gap than the existing guest material and the first host material as the second host material to be added. In addition, it is preferable that the lowest singlet excitation energy level (S1 level) of the second host material is higher than the S1 level of the first host material, and the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the guest material. In addition, it is preferable that the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the first host material. With such a configuration, an exciplex can be formed by two types of host materials. In addition, in order to efficiently form an exciplex, it is particularly preferable to combine a compound that easily accepts holes (hole transporting material) and a compound that easily accepts electrons (electron transporting material). In addition, with this configuration, high efficiency, low voltage, and long life can be simultaneously achieved.

[0210] As the organic compound used as the host material (including the first host material and the second host material), as long as it satisfies the conditions as a host material used in the light-emitting layer, examples of the organic compound include a hole transporting material that can be used in the hole transporting layer (112, 112a, 112b) described above, or an electron transporting material that can be used in the electron transporting layer (114, 114a, 114b) described below, and may be an exciplex consisting of multiple types of organic compounds (the first host material and the second host material described above). Note that an exciplex (also called an exciplex) that forms an excited state with multiple types of organic compounds has an extremely small difference between the S1 level and the T1 level, and functions as a thermally activated delayed fluorescence (TADF) material that can convert triplet excitation energy into singlet excitation energy. As a combination of a plurality of organic compounds forming an exciplex, for example, one of them has a π-electron deficient heteroaromatic ring and the other has a π-electron rich heteroaromatic ring. As a combination for forming an exciplex, one of the compounds may be a phosphorescent material such as an iridium, rhodium, or platinum-based organometallic complex or a metal complex. The first organic compound can also be used as a host material.

[0211] In addition, when a first organic compound having a hole-transporting property is used as the first host material, it is preferable to use an organic compound having a π-electron-deficient heteroaromatic ring (second organic compound) as the second host material as a combination for forming an exciplex.

[0212] There are no particular limitations on the light-emitting substance that can be used in the light-emitting layers (113, 113a, 113b), and any light-emitting substance that converts singlet excitation energy into light emission in the visible light range, or any light-emitting substance that converts triplet excitation energy into light emission in the visible light range, can be used.

[0213] <Light-emitting material that converts singlet excitation energy into light> Examples of luminescent materials that can be used in the luminescent layers (113, 113a, 113b) and convert singlet excitation energy into luminescence include the following fluorescent materials (fluorescent luminescent materials). For example, pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives are listed. Pyrene derivatives are particularly preferred because of their high luminescence quantum yield. Specific examples of pyrene derivatives include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), N,N'-bis(dibenzothiophene-2-yl)-N, N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), etc.

[0214] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenyl-4,4'-stilbenediamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)phenyl]- N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'- (9-Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), and the like can be used.

[0215] In addition, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[ 4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), Rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinit (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhA FD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), 1,6BnfAP rn-03, 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, 1,6BnfAPrn-03, etc. can be used.

[0216] <Light-emitting material that converts triplet excitation energy into light> Next, examples of a light-emitting material that can be used in the light-emitting layer 113 and converts triplet excitation energy into light emission include a phosphorescent material (phosphorescent light-emitting material) and a TADF material.

[0217] A phosphorescent material is a compound that exhibits phosphorescence but does not exhibit fluorescence in a temperature range from low temperature (e.g., 77 K) to room temperature (i.e., 77 K to 313 K). The phosphorescent material preferably has a metal element with a large spin-orbit interaction, and examples of the phosphorescent material include an organometallic complex, a metal complex (platinum complex), and a rare earth metal complex. Specifically, a transition metal element is preferable, and it is particularly preferable to have a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)). Among these, it is preferable to have iridium, since it can increase the transition probability related to the direct transition between the singlet ground state and the triplet excited state.

[0218] <Phosphorescent material (450nm to 570nm: blue or green)> Examples of phosphorescent substances that exhibit blue or green light and have an emission spectrum with a peak wavelength of 450 nm or more and 570 nm or less include the following substances.

[0219] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato] Organometallic complexes with a 4H-triazole ring, such as iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz)3]), tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1- Organometallic complexes containing a 1H-triazole ring, such as methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(II I) (abbreviation: [Ir(dmpimpt-Me)3]), organometallic complexes with an imidazole ring, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) picolinate (abbreviation: FIrpic), and bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2']iridium(III) picolinate (abbreviation: FIrpic). 2’}Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’] Examples include organometallic complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviation: FIr(acac)).

[0220] <Phosphorescent material (495nm to 590nm: green or yellow)> Examples of phosphorescent substances that exhibit green or yellow light and have an emission spectrum with a peak wavelength of 495 nm or more and 590 nm or less include the following substances.

[0221] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm Organometallic iridium compounds having a pyrimidine ring, such as (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp)2(acac)]), and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]). iridium complexes with pyrazine rings, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinate)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinate)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]); tris(2-phenylpyrazinate-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’)iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy)2(4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl -κN)phenyl-κC], [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) Iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC] Organometallic iridium complexes with a pyridine ring, such as [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), and bis(2,4-diphenyl-1,3-oxazolato-N,C 2’) Iridium(III) acetylacetonate (abbreviation: [Ir(dpo)2(acac)]), bis{2-[4'-(perfluorophenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate (abbreviation: [Ir(p-PF-ph)2(acac)]), bis(2-phenylbenzothiazolato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(bt)2(acac)]), as well as rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]).

[0222] <Phosphorescent material (570nm to 750nm: yellow or red)> Examples of phosphorescent substances that exhibit yellow or red light and have an emission spectrum with a peak wavelength of 570 nm or more and 750 nm or less include the following substances.

[0223] For example, pyrimidinate such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and (dipivaloylmethanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]). Organometallic complexes containing an imidine ring, (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κN)phenyl-κC) 2O,O')iridium(III) (abbreviation: [Ir(dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ 2 O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmCP)2(dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2',6,6'-tetramethyl-3,5-heptanedionato-κ2O,O')iridium(III) (abbreviation: [Ir(dmdppr-dmp)2(dpm)]), (acetylacetonato)bis(2-methyl-3-phenylquinoxalinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(mpq)2(acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ Organometallic complexes with pyrazine rings such as (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(dpq)2(acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]), and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC] (2,4-pentanedionato-κ 2These include organometallic complexes with pyridine rings such as (O,O')iridium(III) (abbreviation: [Ir(dmpqn)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: [PtOEP]), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]), and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]).

[0224] ≪TADF material≫ The following materials can be used as TADF materials. TADF materials are materials in which the difference between the S1 level and the T1 level is small (preferably 0.20 eV or less), the triplet excited state can be upconverted to the singlet excited state by a small amount of thermal energy (reverse intersystem crossing), and the material efficiently emits light (fluorescence) from the singlet excited state. Conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited energy level and the singlet excited energy level of 0.00 eV or more and 0.20 eV or less, preferably 0.00 eV or more and 0.10 eV or less. The delayed fluorescence in TADF materials refers to light emission that has a spectrum similar to that of normal fluorescence but has a significantly long lifespan. The lifespan is 1×10 -6 seconds or 1×10 -3 More than seconds.

[0225] The TADF material can also be used as an electron transporting material, a hole transporting material, or a host material.

[0226] Examples of TADF materials include fullerene and its derivatives, acridine derivatives such as proflavine, eosin, etc. Also included are metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complex (abbreviation: SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (abbreviation: SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviation: SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviation: SnF2(OEP)), etioporphyrin-tin fluoride complex (abbreviation: SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (abbreviation: PtCl2OEP).

[0227] [ka]

[0228] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxy) 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9, 9-Dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Heteroaromatic compounds having a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound, such as 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), may also be used.

[0229] In addition, a substance in which a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound are directly bonded is particularly preferable because the donor property of the π-electron rich heteroaromatic compound and the acceptor property of the π-electron deficient heteroaromatic compound are both strong, and the energy difference between the singlet excited state and the triplet excited state is small. In addition, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used as the TADF material. Such a TADF material has a short emission lifetime (excitation lifetime), so that the efficiency decrease in the high brightness region of the light-emitting device can be suppressed.

[0230] [ka]

[0231] In addition to the above, examples of materials capable of converting triplet excitation energy into luminescence include nanostructures of transition metal compounds having a perovskite structure. In particular, nanostructures of metal halide perovskites are preferred. As the nanostructures, nanoparticles and nanorods are preferred.

[0232] In the light-emitting layers (113, 113a, 113b), one or more substances having an energy gap larger than the energy gap of the light-emitting substance (guest material) may be selected and used as the organic compound (host material, etc.) used in combination with the above-mentioned light-emitting substance (guest material).

[0233] <Fluorescent host material> When the light-emitting substance used in the light-emitting layers (113, 113a, 113b) is a fluorescent light-emitting substance, it is preferable to use an organic compound (host material) that has a high energy level in a singlet excited state and a low energy level in a triplet excited state, or an organic compound with a high fluorescence quantum yield. Therefore, as long as the organic compound satisfies such conditions, a hole-transporting material (described above) and an electron-transporting material (described below) shown in this embodiment mode can be used. In addition, the first organic compound can be used.

[0234] Although some of the examples overlap with those described above, examples of the organic compound (host material) from the viewpoint of a preferable combination with a light-emitting substance (fluorescent light-emitting substance) include condensed polycyclic aromatic compounds such as anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives.

[0235] Specific examples of organic compounds (host materials) that are preferably used in combination with fluorescent substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenylanthracene (abbreviation: N,N-diphenylanthracene), and N,N-diphenylanthracene (abbreviation: N,N-diphenylanthracene). N-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazol-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA) , 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl] Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9-(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl] Anthracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtB ImPBPhA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl-2-yl)tetracene, etc.

[0236] <Phosphorescent host material> Furthermore, when the light-emitting substance used in the light-emitting layers (113, 113a, 113b) is a phosphorescent light-emitting substance, an organic compound having a higher triplet excitation energy (energy difference between the ground state and the triplet excited state) than the triplet excitation energy of the light-emitting substance may be selected as the organic compound (host material) to be combined. Note that when multiple organic compounds (e.g., a first host material and a second host material (or assist material)) are used in combination with the light-emitting substance to form an exciplex, it is preferable to mix these multiple organic compounds with the phosphorescent light-emitting substance. Also, the first organic compound can be used.

[0237] With this structure, it is possible to efficiently obtain light emission using ExTET (Exciplex-Triplet Energy Transfer), which is an energy transfer from an exciplex to a light-emitting substance. As a combination of multiple organic compounds, it is preferable to use one that easily forms an exciplex, and it is particularly preferable to combine a compound that easily receives holes (hole transport material) with a compound that easily receives electrons (electron transport material).

[0238] Although some of the organic compounds (host materials, assist materials) may be used in combination with the light-emitting substance (phosphorescent light-emitting substance), examples of the organic compounds include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (benzoin), and the like. midazole ring), quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), phlodiazine derivatives (organic compounds having a phlodiazine ring), zinc- and aluminum-based metal complexes, and the like.

[0239] Among the organic compounds, specific examples of the aromatic amine and carbazole derivative, which are organic compounds having a high hole-transporting property, are the same as the specific examples of the hole-transporting material described above, and any of these are preferable as the host material.

[0240] Among the above organic compounds, specific examples of the dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds with high hole transport properties, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, 2,8-dipheny Examples of the dibenzothiophene include 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and 4-[3-(triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), all of which are preferable as the host material.

[0241] Other examples of preferred host materials include metal complexes having oxazole- or thiazole-based ligands, such as bis[2-(2-benzoxazolyl)phenolate]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolate]zinc(II) (abbreviation: ZnBTZ).

[0242] Specific examples of the organic compounds having high electron transport properties among the above organic compounds include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, and phenanthroline derivatives. These include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II) , 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), and other heteroaromatic rings with an azole ring; bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), and other heteroaromatic rings with a phenanthroline ring; Organic compounds, 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), and other organic compounds containing a heteroaromatic ring having a dibenzoquinoxaline ring, all of which are preferable as the host material. ,

[0243] Among the above organic compounds, specific examples of organic compounds having high electron transport properties, such as pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furodiazine derivatives, include 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), and 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II). 4,6mCzP2Pm), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (mPCCzPTzn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (35DCzPPy), 1,3 ,5-Tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d ]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 12PCCzPnfpr), 9-[(3'-(9 -phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho [1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9 -[3-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-{(3'-[2,8-diphenyldibenzothiophen-4-yl]biphenyl-3-yl}naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-[3'-(2,8-diphenyldibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9, 9'-Spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-furan Examples of suitable organic compounds include organic compounds containing heteroaromatic rings having a diazine ring, such as phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), all of which are suitable as host materials.

[0244] Among the above organic compounds, specific examples of metal complexes, which are organic compounds with high electron transport properties, include zinc- or aluminum-based metal complexes such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq2), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq), as well as metal complexes having a quinoline ring or a benzoquinoline ring, all of which are preferable as the host material.

[0245] Other preferred host materials include polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy).

[0246] Furthermore, bipolar organic compounds having high hole transport properties and high electron transport properties, such as 9-phenyl-9'-(4-phenyl-2-quinazolinyl)-3,3'-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[ Organic compounds having a diazine ring, such as 2,1-b]carbazole (abbreviation: mINc(II)PTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenyl-indolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as the host material.

[0247] <Electron transport layer> The electron transport layers (114, 114a, 114b) are layers that transport electrons injected from the second electrode 102 and the charge generation layers (106, 106a, 106b) by the electron injection layers (115, 115a, 115b) described below to the light-emitting layers (113, 113a, 113b). Note that the light-emitting device according to one embodiment of the present invention can have improved heat resistance by having an electron transport layer with a stacked structure. In addition, the electron transport material used for the electron transport layers (114, 114a, 114b) has an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. -6 cm 2A substance having an electron mobility of 100 / Vs or more is preferable. Note that other substances can be used as long as they have a higher electron transporting property than holes. The electron transporting layer (114, 114a, 114b) can function as a single layer, but may have a stacked structure of two or more layers. Note that the above mixed materials have heat resistance, so that the effect of a thermal process on device characteristics can be suppressed by performing a photolithography process on an electron transporting layer using the mixed materials.

[0248] ≪Electron transport material≫ As the electron transporting material that can be used for the electron transport layer (114, 114a, 114b), an organic compound with high electron transporting properties can be used, for example, a heteroaromatic compound. The heteroaromatic compound is a cyclic compound containing at least two different elements in a ring. The ring structure includes a three-membered ring, a four-membered ring, a five-membered ring, a six-membered ring, etc., and a five-membered ring or a six-membered ring is particularly preferred, and the element contained is preferably a heteroaromatic compound containing one or more of nitrogen, oxygen, or sulfur in addition to carbon. In particular, a heteroaromatic compound containing nitrogen (nitrogen-containing heteroaromatic compound) is preferred, and it is preferable to use a material with high electron transporting properties (electron transporting material) such as a nitrogen-containing heteroaromatic compound or a π-electron-deficient heteroaromatic compound containing the same.

[0249] The electron transport material may be a material different from the material used in the light-emitting layer. Not all of the excitons generated by the recombination of carriers in the light-emitting layer can contribute to light emission, and they may diffuse to layers adjacent to or in the vicinity of the light-emitting layer. In order to avoid this phenomenon, it is preferable that the energy level (lowest singlet excitation level or lowest triplet excitation level) of the material used in the layer adjacent to or in the vicinity of the light-emitting layer is higher than that of the material used in the light-emitting layer. Therefore, by using a material different from the material used in the light-emitting layer as the electron transport material, a highly efficient device can be obtained.

[0250] A heteroaromatic compound is an organic compound that contains at least one heteroaromatic ring.

[0251] The heteroaromatic ring has any one of a pyridine ring, a diazine ring, a triazine ring, an azole ring, an oxazole ring, and a thiazole ring. The heteroaromatic ring having a diazine ring includes a heteroaromatic ring having a pyrimidine ring, a pyrazine ring, and a pyridazine ring. The heteroaromatic ring having an azole ring includes a heteroaromatic ring having an imidazole ring, a triazole ring, and an oxadiazole ring.

[0252] The heteroaromatic ring also includes a condensed heteroaromatic ring having a condensed ring structure, such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a quinazoline ring, a benzoquinazoline ring, a dibenzoquinazoline ring, a phenanthroline ring, a phlodiazine ring, or a benzimidazole ring.

[0253] Incidentally, among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a five-membered ring structure include heteroaromatic compounds having an imidazole ring, heteroaromatic compounds having a triazole ring, heteroaromatic compounds having an oxazole ring, heteroaromatic compounds having an oxadiazole ring, heteroaromatic compounds having a thiazole ring, and heteroaromatic compounds having a benzimidazole ring.

[0254] Furthermore, for example, among heteroaromatic compounds containing one or more of nitrogen, oxygen, and sulfur in addition to carbon, examples of heteroaromatic compounds having a 6-membered ring structure include heteroaromatic compounds having a heteroaromatic ring such as a pyridine ring, a diazine ring (including a pyrimidine ring, a pyrazine ring, and a pyridazine ring), a triazine ring, and an azole ring. Included in the heteroaromatic compounds having a structure in which pyridine rings are linked are heteroaromatic compounds having a bipyridine structure and heteroaromatic compounds having a terpyridine structure.

[0255] Further, examples of heteroaromatic compounds having a fused ring structure partially including the above-mentioned 6-membered ring structure include heteroaromatic compounds having a fused heteroaromatic ring such as a quinoline ring, a benzoquinoline ring, a quinoxaline ring, a dibenzoquinoxaline ring, a phenanthroline ring, a phlodiazine ring (including a structure in which an aromatic ring is fused to the furan ring of a phlodiazine ring), and a benzimidazole ring.

[0256] Specific examples of the heteroaromatic compound having a five-membered ring structure (such as an azole ring (including an imidazole ring, a triazole ring, and an oxadiazole ring), an oxazole ring, a thiazole ring, and a benzimidazole ring) include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl nyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), and the like.

[0257] Specific examples of the heteroaromatic compound having a 6-membered ring structure (including a heteroaromatic ring having a pyridine ring, a diazine ring, a triazine ring, etc.) include heteroaromatic compounds having a pyridine ring such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) and 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB); ,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (PCDBfTzn), 2-(biphenyl-3 heteroaromatic compounds containing heteroaromatic rings having a triazine ring, such as 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), mFBPTzn, 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-Bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 4,6mCzBP2Pm, 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2P Pm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 4-[3-(dibenzothiophen-4-yl)phenyl]-8-(naphthalen-2-yl)-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8βN-4mDBtPBfpm), 8BP-4mDBtPBfpm, 9mDBtBPN fpr, 9pmDBtBPNfpr, 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl and heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm). The aromatic compounds containing a heteroaromatic ring include heteroaromatic compounds having a condensed heteroaromatic ring.

[0258] Other examples include 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mB heteroaromatic compounds containing a heteroaromatic ring having a diazine (pyrimidine) ring, such as 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviation: 2Py3Tz), 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), and the like.

[0259] Specific examples of the heteroaromatic compound having a fused ring structure partially including a 6-membered ring structure (heteroaromatic compound having a fused ring structure) include bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenylene)bis(1,2-phenylene)-2,2'-(1,3 ... mPPhen2P), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPD and heteroaromatic compounds having a quinoxaline ring, such as 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-III), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), and 2mpPCBPDBq.

[0260] In addition to the heteroaromatic compounds described above, the electron transport layer (114, 114a, 114b) may include the following metal complexes: metal complexes having a quinoline ring or a benzoquinoline ring, such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3), Almq3, 8-quinolinolato-lithium (abbreviation: Liq), BeBq2, bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), and bis(8-quinolinolato)zinc(II) (abbreviation: Znq), and metal complexes having an oxazole ring or a thiazole ring, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0261] In addition, polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2'-bipyridine-6,6'-diyl)] (abbreviation: PF-BPy) can also be used as electron transport materials.

[0262] In addition, the electron transport layer (114, 114a, 114b) may be not only a single layer, but also a laminate structure of two or more layers made of the above-mentioned substances.

[0263] <Electron injection layer> The electron injection layers (115, 115a, 115b) are layers containing a substance with high electron injection properties. The electron injection layers (115, 115a, 115b) are layers for increasing the efficiency of electron injection from the second electrode 102, and it is preferable to use a material having a small difference (0.50 eV or less) between the work function value of the material used for the second electrode 102 and the LUMO level value of the material used for the electron injection layers (115, 115a, 115b). Therefore, the electron injection layer 115 may contain any of the following: lithium, cesium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-quinolinolato-lithium (abbreviation: Liq), 2-(2-pyridyl)phenolatolithium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatolithium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)phenolatolithium (abbreviation: LiPPP), lithium oxide (LiO x), cesium carbonate, or other alkali metals, alkaline earth metals, or compounds thereof can be used. Rare earth metals or rare earth metal compounds, such as erbium fluoride (ErF3) and ytterbium (Yb), can also be used. 1-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine (abbreviation: 2hppSF), 1,1'-(9,9'-spirobi[9H-fluorene]-2,7-diyl)bis( ... Compounds having a 1,3,4,6,7,8-tetrahydro-2H-pyrimido[1,2-a]pyrimidine skeleton, such as 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: 2,7hpp2SF) and 1,1'-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: hpp2Py), can also be used. The electron injection layer (115, 115a, 115b) may be formed by mixing a plurality of the above materials, or may be formed by stacking a plurality of the above materials. The electron injection layer (115, 115a, 115b) may also be formed by using an electride. Examples of the electride include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. The substances constituting the above-mentioned electron transport layer (114, 114a, 114b) can also be used.

[0264] In addition, a mixed material obtained by mixing an organic compound and an electron donor (donor) may be used for the electron injection layer (115, 115a, 115b). Such a mixed material has excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that is excellent in transporting the generated electrons, and specifically, for example, the above-mentioned electron transport material (metal complex, heteroaromatic compound, etc.) used for the electron transport layer (114, 114a, 114b) can be used. As the electron donor, a substance that exhibits electron donating properties to the organic compound can be used. Specifically, alkali metals, alkaline earth metals, and rare earth metals are preferred, and examples of the material include lithium, cesium, magnesium, calcium, erbium, and ytterbium. In addition, alkali metal oxides and alkaline earth metal oxides are preferred, and examples of the material include lithium oxide, calcium oxide, and barium oxide. In addition, a Lewis base such as magnesium oxide can also be used. In addition, an organic compound such as tetrathiafulvalene (abbreviation: TTF) can also be used. Moreover, a plurality of these materials may be laminated.

[0265] Alternatively, the electron injection layer (115, 115a, 115b) may be made of a mixed material made of an organic compound and a metal. The organic compound used here preferably has a LUMO level of -3.60 eV or more and -2.30 eV or less. In addition, a material having an unshared electron pair is preferable.

[0266] Therefore, as the organic compound used in the above mixed material, a mixed material obtained by mixing a heteroaromatic compound with a metal, which is described above as being usable in the electron transport layer, may be used. As the heteroaromatic compound, a material having an unshared electron pair, such as a heteroaromatic compound having a 5-membered ring structure (imidazole ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, benzimidazole ring, etc.), a heteroaromatic compound having a 6-membered ring structure (pyridine ring, diazine ring (including pyrimidine ring, pyrazine ring, pyridazine ring, etc.), triazine ring, bipyridine ring, terpyridine ring, etc.), or a heteroaromatic compound having a condensed ring structure (quinoline ring, benzoquinoline ring, quinoxaline ring, dibenzoquinoxaline ring, phenanthroline ring, etc.) that partially contains a 6-membered ring structure, is preferable. Specific materials have been described above, so a description thereof will be omitted here.

[0267] As the metal used in the above mixed material, it is preferable to use a transition metal belonging to Group 5, Group 7, Group 9 or Group 11 in the periodic table and a material belonging to Group 13, such as Ag, Cu, Al, or In. In this case, the organic compound forms a half occupied molecular orbital (SOMO) with the transition metal.

[0268] For example, when the light obtained from the light-emitting layer 113b is amplified, the optical distance between the second electrode 102 and the light-emitting layer 113b is preferably less than ¼ of the wavelength λ of the light emitted by the light-emitting layer 113b. In this case, the thickness can be adjusted by changing the thickness of the electron-transporting layer 114b or the electron-injecting layer 115b.

[0269] In addition, as in the light-emitting device shown in FIG. 1(E), by providing two EL layers (103a, 103b) and providing a charge generation layer 106 between the two EL layers, a structure in which a plurality of EL layers are stacked between a pair of electrodes (also referred to as a tandem structure) can be formed.

[0270] <Charge generation layer> The charge generation layer 106 has a function of injecting electrons into the EL layer 103a and injecting holes into the EL layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be a structure in which an electron acceptor is added to a hole transporting material (also called a P-type layer), or a structure in which an electron donor is added to an electron transporting material (also called an electron injection buffer layer). In addition, both of these structures may be stacked. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. By forming the charge generation layer 106 using the above-mentioned material, it is possible to suppress an increase in driving voltage when EL layers are stacked.

[0271] In the case where the charge generation layer 106 has a structure (P-type layer) in which an electron acceptor is added to a hole transporting material that is an organic compound, the material shown in this embodiment mode can be used as the hole transporting material. Examples of the electron acceptor include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ) and chloranil. Examples of the oxide of a metal that belongs to Groups 4 to 8 of the periodic table can also be used. Specific examples of the oxide include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Note that the above-mentioned acceptor material may also be used. In addition, a mixed film obtained by mixing materials constituting the P-type layer may be used, or single films containing each material may be stacked.

[0272] In the charge generation layer 106, when an electron donor is added to an electron transporting material (electron injection buffer layer), the material shown in this embodiment can be used as the electron transporting material. In addition, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table, and an oxide or carbonate thereof can be used as the electron donor. Specifically, it is preferable to use lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li2O), cesium carbonate, or the like. In addition, an alkali metal compound such as Liq may be used. In addition, an organic compound such as tetrathianaphthacene may be used as the electron donor. In addition, an organic compound having a 1,3,4,6,7,8-tetrahydro-2H-pyrimido[1,2-a]pyrimidine skeleton, such as 2hppSF, 2,7hpp2SF, or hpp2Py, may be used as the electron donor. When these organic compounds are used as electron donors, it is preferable to combine them with electron transport materials that contain an organic compound having a heteroaromatic ring with a phenanthroline ring, such as bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), or 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), because this reduces the driving voltage of the light-emitting device.

[0273] In the case where an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transport properties and has a function of preventing interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer and the LUMO level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer can be −5.00 eV or more, preferably −5.00 eV or more and −3.00 eV or less. Note that, as the substance having electron transport properties used in the electron relay layer, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0274] From the viewpoint of light extraction efficiency, the charge generation layer 106 is preferably transparent to visible light (specifically, the visible light transmittance of the charge generation layer 106 is 40% or more). The charge generation layer 106 functions even if it has a lower conductivity than the first electrode 101 and the second electrode 102.

[0275] Although FIG. 1E shows a structure in which the EL layer 103 has two stacked layers, a stacked structure of three or more EL layers may be used by providing a charge generating layer between different EL layers.

[0276] <Cap layer> Although not shown in FIGS. 1A to 1F, a capping layer may be provided on the second electrode 102 of the light-emitting device. For example, a material with a high refractive index can be used for the capping layer. By providing the capping layer on the second electrode 102, the extraction efficiency of light emitted from the second electrode 102 can be improved.

[0277] Specific examples of materials that can be used for the capping layer include 5,5'-diphenyl-2,2'-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc) and 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II).

[0278] <Substrate> The light-emitting device shown in this embodiment mode can be formed on various substrates. The type of substrate is not limited to a specific one. Examples of the substrate include a semiconductor substrate (e.g., a single crystal substrate or a silicon substrate), an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a metal substrate, a stainless steel substrate, a substrate having stainless steel foil, a tungsten substrate, a substrate having tungsten foil, a flexible substrate, a laminated film, a paper containing a fibrous material, or a base film.

[0279] Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, soda lime glass, etc. Examples of flexible substrates, laminated films, base films, etc. include plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethersulfone (PES), synthetic resins such as acrylic resins, polypropylene, polyester, polyvinyl fluoride, polyvinyl chloride, polyamide, polyimide, aramid, epoxy resins, inorganic deposition films, and papers.

[0280] In addition, a gas phase method such as a vapor deposition method, a spin coating method, and a liquid phase method such as an inkjet method can be used to manufacture the light-emitting device shown in this embodiment. When a vapor deposition method is used, a physical vapor deposition method (PVD method) such as a sputtering method, an ion plating method, an ion beam deposition method, a molecular beam deposition method, and a vacuum deposition method, a chemical vapor deposition method (CVD method), and the like can be used. In particular, layers having various functions included in the EL layer of the light-emitting device (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115) can be formed by a vapor deposition method (vacuum deposition method, etc.), a coating method (dip coating method, die coating method, bar coating method, spin coating method, spray coating method, and the like), a printing method (inkjet method, screen (screen printing) method, offset (lithographic printing) method, flexo (relief printing) method, gravure method, microcontact method, and the like), and the like.

[0281] In addition, when applying a film formation method such as the coating method or printing method, it is possible to use a high molecular compound (oligomer, dendrimer, polymer, etc.), a medium molecular compound (a compound in the intermediate range between a low molecular weight and a high molecular weight: a molecular weight of 400 to 4000), an inorganic compound (quantum dot material, etc.), etc. In addition, as the quantum dot material, it is possible to use a colloidal quantum dot material, an alloy type quantum dot material, a core-shell type quantum dot material, a core type quantum dot material, etc.

[0282] The layers constituting the EL layer 103 of the light-emitting device described in this embodiment (hole injection layer 111, hole transport layer 112, light-emitting layer 113, electron transport layer 114, and electron injection layer 115) are not limited to the materials described in this embodiment, and other materials can be used in combination as long as they fulfill the functions of each layer.

[0283] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0284] (Embodiment 3) In this embodiment, a light receiving and emitting device 700 will be described in order to explain a specific configuration example of a light emitting device according to one embodiment of the present invention and an example of a manufacturing method thereof. The light receiving and emitting device 700 is a device having both a light emitting device and a light receiving device, and can also be called a light emitting device including a light receiving device or a light receiving device including a light emitting device. The light receiving and emitting device 700 can also be called a display panel or a display device because it can be applied to a display unit of an electronic device or the like.

[0285] <Configuration example of light emitting and receiving device 700> The light receiving and emitting device 700 shown in FIG. 3A has a light emitting device 550B, a light emitting device 550G, a light emitting device 550R, and a light receiving device 550PS formed on a functional layer 520 provided on a first substrate 510. The functional layer 520 includes a driving circuit such as a gate driver and a source driver composed of a plurality of transistors, as well as wiring and the like that electrically connects them. These driving circuits are, for example, electrically connected to the light emitting device 550B, the light emitting device 550G, the light emitting device 550R, and the light receiving device 550PS, respectively, and can drive them. The light receiving and emitting device 700 also includes an insulating layer 705 on the functional layer 520 and each device (the light emitting device and the light receiving device), and the insulating layer 705 has a function of bonding the second substrate 770 and the functional layer 520 together.

[0286] At least one of the light-emitting devices 550B, 550G, and 550R has the device structure shown in the above embodiment. The configuration of the EL layer 103 (see FIG. 1(A)) is different between the light-emitting devices. For example, the light-emitting layer 105B of the EL layer 103B can emit blue light, the light-emitting layer 105G of the EL layer 103G can emit green light, and the light-emitting layer 105R of the EL layer 103R can emit red light. For example, the light-emitting layer 105B can have the configuration of the light-emitting layer described in the above embodiment, and the light-emitting layer 105G and the light-emitting layer 105R can be made of known materials.

[0287] In the present embodiment, a case will be described in which each device (a plurality of light-emitting devices and a light-receiving device) is formed separately. However, a part of the EL layer of the light-emitting device (a hole injection layer, a hole transport layer, and an electron transport layer) and a part of the active layer of the light-receiving device (a hole injection layer, a hole transport layer, and an electron transport layer) may be formed simultaneously from the same material in the manufacturing process.

[0288] In this specification and the like, a structure in which the light-emitting layers of the light-emitting devices of each color (e.g., blue (B), green (G), and red (R)) and the light-receiving layers of the light-receiving devices are separately manufactured or separately painted may be referred to as a side-by-side (SBS) structure. In the light-receiving and light-emitting device 700 shown in FIG. 3A, the light-emitting device 550B, the light-emitting device 550G, the light-emitting device 550R, and the light-receiving device 550PS are arranged in this order, but one embodiment of the present invention is not limited to this configuration.

[0289] In FIG. 3A, the light-emitting device 550B has an electrode 551B, an electrode 552, and an EL layer 103B sandwiched between the electrodes 551B and 552. The light-emitting device 550G has an electrode 551G, an electrode 552, and an EL layer 103G sandwiched between the electrodes 551G and 552. The light-emitting device 550R has an electrode 551R, an electrode 552, and an EL layer 103R sandwiched between the electrodes 551R and 552. The EL layers (103B, 103G, 103R) have a laminated structure including a plurality of layers with different functions including the light-emitting layers (105B, 105G, 105R). Note that the specific configuration of each layer of the light-emitting device is as shown in the above embodiment, but is not limited thereto.

[0290] 3(A), light-receiving device 550PS has electrode 551PS, electrode 552, and light-receiving layer 103PS sandwiched between electrode 551PS and electrode 552. Light-receiving layer 103PS has a laminated structure consisting of a plurality of layers with different functions, including active layer 105PS. Active layer 105PS includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon, and organic semiconductors including organic compounds. The specific configurations of the other layers of the light-receiving device can be similar to those of the light-emitting device.

[0291] FIG. 3(A) illustrates a case in which the EL layer 103B has a hole injection / transport layer 104B, an emitting layer 105B, an electron transport layer 108B, and an electron injection layer 109, the EL layer 103G has a hole injection / transport layer 104G, an emitting layer 105G, an electron transport layer 108G, and an electron injection layer 109, the EL layer 103R has a hole injection / transport layer 104R, an emitting layer 105R, an electron transport layer 108R, and an electron injection layer 109, and the light receiving layer 103PS has a hole injection / transport layer 104PS, an active layer 105PS, an electron transport layer 108PS, and an electron injection layer 109, but the present invention is not limited to this.

[0292] In FIG. 3A, electron injection layer 109 and electrode 552 are layers (common layers) common to each device (light-emitting device 550B, light-emitting device 550G, light-emitting device 550R, and light-receiving device 550PS).

[0293] Hereinafter, for the sake of simplicity, light-emitting device 550B, light-emitting device 550G, and light-emitting device 550R may be collectively referred to as light-emitting device 550, electrode 551B, electrode 551G, and electrode 551R may be collectively referred to as electrode 551, EL layer 103B, EL layer 103G, and EL layer 103R may be collectively referred to as EL layer 103, hole injection / transport layer 104B, hole injection / transport layer 104G, and hole injection / transport layer 104R may be collectively referred to as hole injection / transport layer 104, light-emitting layer 105B, light-emitting layer 105G, and light-emitting layer 105R may be collectively referred to as light-emitting layer 105, and electron transport layer 108B, electron transport layer 108G, and electron transport layer 108R may be collectively referred to as electron transport layer 108.

[0294] As shown in FIG. 3(A), an insulating layer 107 may be formed on the side surfaces (or ends) of the hole injection / transport layer 104, the light-emitting layer 105, and the electron transport layer 108 of the EL layer 103, and on the side surfaces (or ends) of the hole injection / transport layer 104PS, the active layer 105PS, and the electron transport layer 108PS of the light-receiving layer 103PS. The insulating layer 107 is formed in contact with the side surfaces (or ends) of the EL layer 103 and the light-receiving layer 103PS. This makes it possible to suppress the intrusion of oxygen, moisture, or their constituent elements from the side surfaces of the EL layer 103 and the light-receiving layer 103PS into the inside. The insulating layer 107 has a structure that continuously covers the side surfaces of a part of the EL layer 103 of the adjacent light-emitting device or a part of the light-receiving layer 103PS of the light-receiving device. For example, in FIG. 3A, the sides of a portion of EL layer 103B of light-emitting device 550B and a portion of EL layer 103G of light-emitting device 550G are covered by continuous insulating layer 107.

[0295] 3(A), a partition 528 is provided between each of the devices. However, the electron injection layer 109 and the electrode 552, which are common layers of each device, are not divided by the partition 528 but are provided continuously. Therefore, it can be said that the partition 528 is provided in a region surrounded by the electron injection layer 109 and the insulating layer 107. The partition 528 is located, via the insulating layer 107, on the side surface (or end portion) of the electrode 551, part of the EL layer 103 (hole injection / transport layer 104, light-emitting layer 105, and electron transport layer 108), and part of the light-receiving layer 103PS (hole injection / transport layer 104PS, active layer 105PS, and electron transport layer 108PS).

[0296] In the EL layer 103 and the light receiving layer 103PS, the hole injection layer included in the hole transport region located between the anode and the light emitting layer, and between the anode and the active layer, often has high conductivity, and therefore may cause crosstalk if it is formed as a layer common to adjacent devices. Therefore, as shown in this configuration example, by separating a part of the EL layer 103 (hole injection / transport layer 104, light emitting layer 105, and electron transport layer 108) from a part of the light receiving layer 103PS (hole injection / transport layer 104PS, active layer 105PS, and electron transport layer 108PS) and providing an insulating layer 107 and a partition wall 528 between them, it is possible to suppress the occurrence of crosstalk between adjacent devices.

[0297] In addition, it is also possible to flatten a recess formed between adjacent devices by providing the partition wall 528. By flattening the recess, it is possible to prevent disconnection of the electron injection layer 109 and the electrode 552 formed on the EL layer 103 and the light receiving layer 103PS.

[0298] For example, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, indium gallium zinc oxide, silicon nitride, or silicon nitride oxide can be used for the insulating layer 107. The insulating layer 107 may be formed by stacking the above-mentioned materials. The insulating layer 107 can be formed by sputtering, CVD, molecular beam epitaxy (MBE), pulsed laser deposition (PLD), atomic layer deposition (ALD), or the like, but the ALD method, which has good coverage, is more preferable.

[0299] As the insulating material used to form the partition 528, for example, an organic material such as an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimideamide resin, a silicone resin, a siloxane resin, a benzocyclobutene-based resin, a phenol resin, or a precursor of these resins can be used. In addition, an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or an alcohol-soluble polyamide resin may be used. In addition, a photosensitive resin such as a photoresist can be used. In addition, the photosensitive resin can be a positive material or a negative material.

[0300] By using a photosensitive resin, the partition 528 can be formed only by the steps of exposure and development. Alternatively, the partition 528 may be formed using a negative photosensitive resin (e.g., a resist material). When an insulating layer containing an organic material is used as the partition 528, it is preferable to use a material that absorbs visible light. When a material that absorbs visible light is used for the partition 528, it becomes possible for the partition 528 to absorb light emitted from the EL layer, and light (stray light) that may leak to the adjacent EL layer and light receiving layer can be suppressed. Therefore, a light receiving and emitting device with high display quality can be provided.

[0301] The difference in height between the upper surface of the partition 528 and the upper surface of either the EL layer 103 or the light receiving layer 103PS is, for example, preferably 0.5 times or less, more preferably 0.3 times or less, the thickness of the partition 528. For example, the partition 528 may be provided so that the upper surface of either the EL layer 103 or the light receiving layer 103PS is higher than the upper surface of the partition 528. For example, the partition 528 may be provided so that the upper surface of the partition 528 is higher than the upper surfaces of the light emitting layers of the EL layer 103B, EL layer 103G, and EL layer 103R and the active layer of the light receiving layer 103PS.

[0302] In a high-definition light-emitting / receiving device exceeding 1000 ppi, if crosstalk occurs between devices, the color gamut that can be displayed by the light-emitting / receiving device becomes narrow. In a high-definition light-emitting / receiving device exceeding 1000 ppi, preferably a high-definition light-emitting / receiving device exceeding 2000 ppi, and more preferably an ultra-high-definition light-emitting / receiving device exceeding 5000 ppi, an insulating layer 107 and a partition wall 528 are provided between a part of the EL layer 103 (hole injection / transport layer 104, light-emitting layer 105B, and electron transport layer 108) and a part of the light-receiving layer 103PS (hole injection / transport layer 104, active layer 105PS, and electron transport layer 108), thereby providing a light-emitting / receiving device capable of displaying vivid colors.

[0303] 3(B) and 3(C) are schematic top views of the light receiving and emitting device 700 corresponding to the dashed line Ya-Yb in the cross-sectional view of FIG. 3(A). That is, each device is arranged in a matrix. FIG. 3(B) shows a so-called stripe arrangement in which light emitting devices or light receiving devices of the same color are arranged in the X direction. FIG. 3(C) shows a configuration in which light emitting devices or light receiving devices of the same color are arranged in the X direction, but a pattern is formed for each pixel. The arrangement method of the light emitting devices is not limited to this, and an arrangement method such as a delta arrangement or a zigzag arrangement may be applied, or a pentile arrangement, a diamond arrangement, or the like may be used.

[0304] In addition, since pattern formation is performed using photolithography in the separation processing of a part of the EL layer 103 (hole injection / transport layer 104, light-emitting layer 105B, and electron transport layer 108) and a part of the light-receiving layer 103PS (hole injection / transport layer 104, active layer 105PS, and electron transport layer 108), a high-definition light-receiving / light-emitting device (display panel) can be manufactured. Note that the ends (side surfaces) of the parts of the EL layer 103 and the parts of the light-receiving layer 103PS processed by pattern formation using photolithography have shapes that have approximately the same surface (or are located on approximately the same plane). In this case, the width (SE) of the gap 580 between each EL layer and light-receiving layer is preferably 5 μm or less, and more preferably 1 μm or less.

[0305] Fig. 3(D) is a schematic cross-sectional view corresponding to dashed line C1-C2 in Fig. 3(B) and Fig. 3(C). Fig. 3(D) shows connection portion 560C where connection electrode 551C and electrode 552 are electrically connected. In connection portion 560C, electrode 552 is provided in contact with connection electrode 551C. In addition, partition wall 528 is provided to cover the end of connection electrode 551C.

[0306] <Example of a manufacturing method for a light emitting / receiving device> 4A, an electrode 551B, an electrode 551G, an electrode 551R, and an electrode 551PS are formed. For example, a conductive film is formed on the functional layer 520 formed on the first substrate 510, and processed into a predetermined shape by photolithography.

[0307] The conductive film can be formed by sputtering, CVD, MBE, vacuum deposition, PLD, ALD, etc. CVD methods include plasma enhanced chemical vapor deposition (PECVD) and thermal CVD. Metal organic chemical vapor deposition (MOCVD) is one type of thermal CVD.

[0308] In addition to the above-mentioned photolithography method, the conductive film may be processed by a nanoimprint method, a sandblast method, a lift-off method, etc. Also, an island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0309] There are two typical photolithography methods. One is a method in which a resist mask is formed on a thin film to be processed, the thin film is processed by etching or the like, and the resist mask is removed. The other is a method in which a photosensitive thin film is formed, and then the thin film is processed into a desired shape by exposure and development. Note that the former method includes heat treatment steps such as baking after resist application (PAB: Pre Applied Bake) and baking after exposure (PEB: Post Exposure Bake). In one embodiment of the present invention, lithography is used not only for processing a conductive film, but also for processing a thin film (a film made of an organic compound or a film partially containing an organic compound) used to form an EL layer.

[0310] In the photolithography method, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. In addition, ultraviolet light, KrF laser light, ArF laser light, or the like may be used. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. Electron beams may also be used instead of light used for exposure. Extreme ultraviolet light, X-rays, or electron beams are preferable because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0311] For etching the thin film using a resist mask, a dry etching method, a wet etching method, a sandblasting method, or the like can be used.

[0312] Next, as shown in FIG. 4(B), the hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B are formed on the electrodes 551B, 551G, 551R, and 551PS. The hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B can be formed by, for example, vacuum deposition. Furthermore, a sacrificial layer 110B is formed on the electron transport layer 108B. In forming the hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B, for example, the materials shown in the previous embodiment can be used.

[0313] In addition, it is preferable to use a film having high resistance to the etching treatment of the hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B, that is, a film having a large etching selectivity, for the sacrificial layer 110B. In addition, it is preferable that the sacrificial layer 110B has a laminated structure of a first sacrificial layer and a second sacrificial layer having different etching selectivity. In addition, the sacrificial layer 110B can be a film that can be removed by a wet etching method that causes little damage to the EL layer 103B. Oxalic acid or the like can be used as an etching material for wet etching. In this specification and the like, the sacrificial layer may be called a mask layer.

[0314] The sacrificial layer 110B may be, for example, an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film. The sacrificial layer 110B may be formed by various film formation methods such as a sputtering method, a vapor deposition method, a CVD method, or an ALD method.

[0315] The sacrificial layer 110B may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing the metal material. In particular, it is preferable to use a low melting point material such as aluminum or silver.

[0316] Also, as the sacrificial layer 110B, a metal oxide such as indium gallium zinc oxide (In-Ga-Zn oxide, also written as IGZO) can be used. Furthermore, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), etc. can be used. Alternatively, indium tin oxide containing silicon, etc. can be used.

[0317] The present invention can also be applied to a case where an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) is used instead of the above-mentioned gallium. In particular, it is preferable that M is one or more elements selected from gallium, aluminum, and yttrium.

[0318] The sacrificial layer 110B may be made of an inorganic insulating material such as aluminum oxide, hafnium oxide, or silicon oxide.

[0319] In addition, it is preferable to use a material that can be dissolved in a chemically stable solvent for at least the uppermost electron transport layer 108B as the sacrificial layer 110B. In particular, a material that dissolves in water or alcohol can be suitably used for the sacrificial layer 110B. When forming the sacrificial layer 110B, it is preferable to apply the sacrificial layer 110B by a wet film formation method in a state where the sacrificial layer 110B is dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, by performing the heat treatment under a reduced pressure atmosphere, the solvent can be removed at a low temperature in a short time, and therefore thermal damage to the hole injection / transport layer 104B, the light-emitting layer 105B, and the electron transport layer 108B can be reduced, which is preferable.

[0320] When the sacrificial layer 110B has a laminated structure, a layer made of the above-mentioned material may be used as a first sacrificial layer, and a second sacrificial layer may be formed thereon to form a laminated structure.

[0321] In this case, the second sacrificial layer is a film used as a hard mask when etching the first sacrificial layer. In addition, when processing the second sacrificial layer, the first sacrificial layer is exposed. Therefore, the first sacrificial layer and the second sacrificial layer are selected as a combination of films having a large etching selectivity. Therefore, a film that can be used for the second sacrificial layer can be selected according to the etching conditions of the first sacrificial layer and the etching conditions of the second sacrificial layer.

[0322] For example, when dry etching using a gas containing fluorine (also called a fluorine-based gas) is used for etching the second sacrificial layer, silicon, silicon nitride, silicon oxide, tungsten, titanium, molybdenum, tantalum, tantalum nitride, an alloy containing molybdenum and niobium, or an alloy containing molybdenum and tungsten can be used for the second sacrificial layer. Here, as a film that can have a large etching selectivity (i.e., can slow down the etching rate) with respect to the dry etching using the fluorine-based gas, there are metal oxide films such as IGZO and ITO, which can be used for the first sacrificial layer.

[0323] However, the second sacrificial layer is not limited to this, and can be selected from various materials according to the etching conditions of the first sacrificial layer and the etching conditions of the second sacrificial layer. For example, it can be selected from the films that can be used for the first sacrificial layer.

[0324] The second sacrificial layer may be, for example, a nitride film, such as silicon nitride, aluminum nitride, hafnium nitride, titanium nitride, tantalum nitride, tungsten nitride, gallium nitride, or germanium nitride.

[0325] Alternatively, an oxide film can be used as the second sacrificial layer. Typically, an oxide film or an oxynitride film such as silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, hafnium oxide, or hafnium oxynitride can be used.

[0326] Next, as shown in Fig. 4(C), resist is applied onto the sacrificial layer 110B, and the resist is formed into a desired shape (resist mask: RES) using photolithography. When performing such a method, there are heat treatment steps such as heating after resist application (PAB: Pre Applied Bake) and heating after exposure (PEB: Post Exposure Bake). For example, the PAB temperature is around 100°C, and the PEB temperature is around 120°C. Therefore, it is necessary for the light emitting device to be able to withstand these processing temperatures.

[0327] Next, the obtained resist mask RES is used to etch away a portion of the sacrificial layer 110B that is not covered by the resist mask RES. After removing the resist mask RES, the hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B that are not covered by the sacrificial layer are etched away to process the hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B into a shape having a side surface on the electrode 551B (or a side surface is exposed) or into a strip shape extending in a direction intersecting the paper surface. Dry etching can be used for the etching. In the case where the sacrificial layer 110B has a laminated structure of the first sacrificial layer and the second sacrificial layer, a portion of the second sacrificial layer is etched by the resist mask RES, and then the resist mask RES is removed, and a portion of the first sacrificial layer is etched using the second sacrificial layer as a mask, to process the hole injection / transport layer 104B, the light emitting layer 105B, and the electron transport layer 108B into a predetermined shape. By these etching processes, the shape shown in FIG. 5(A) is obtained.

[0328] 5(B), the hole injection / transport layer 104G, the light emitting layer 105G, and the electron transport layer 108G are formed on the sacrificial layer 110B, the electrode 551G, the electrode 551R, and the electrode 551PS. In forming the hole injection / transport layer 104G, the light emitting layer 105G, and the electron transport layer 108G, the materials shown in the previous embodiment can be used. In addition, in forming the hole injection / transport layer 104G, the light emitting layer 105G, and the electron transport layer 108G, for example, a vacuum deposition method can be used.

[0329] Thereafter, in the same manner as in the formation of the hole injection / transport layer 104B, the light-emitting layer 105B, the electron transport layer 108B, and the sacrificial layer 110B, a hole injection / transport layer 104G, a light-emitting layer 105G, an electron transport layer 108G, and a sacrificial layer 110G are formed on the electrode 551G, a hole injection / transport layer 104R, a light-emitting layer 105R, an electron transport layer 108R, and a sacrificial layer 110R are formed on the electrode 551R, and a hole injection / transport layer 104PS, an active layer 105PS, an electron transport layer 108PS, and a sacrificial layer 110PS are formed on the electrode 551PS, thereby obtaining the shape shown in FIG. 5(C).

[0330] Next, as shown in FIG. 6(A), the insulating layer 107 is formed on the sacrificial layers 110B, 110G, 110R, and 110PS.

[0331] The insulating layer 107 can be formed by, for example, ALD. In this case, the insulating layer 107 is formed in contact with each side surface (each end portion) of the hole injection / transport layers (104B, 104G, 104R, 104PS), the light-emitting layers (105R, 105G, 105R), the active layer 105PS, and the electron transport layers (108B, 108G, 108R, 108PS) of each device, as shown in Fig. 6(A). This makes it possible to suppress the intrusion of oxygen, moisture, or their constituent elements into the interior from each side surface.

[0332] 6(B), a resin film 528a is formed on the insulating layer 107. For example, a negative photosensitive resin or a positive photosensitive resin can be used as the resin film 528a.

[0333] Next, as shown in FIG. 6C, a portion of the resin film 528a, a portion of the insulating layer 107, and the sacrificial layers (110B, 110G, 110R, 110PS) are removed to expose the upper surface of the electron transport layer (108B, 108G, 108R, 108PS).

[0334] 6(D), a heat treatment is performed to curve the upper end of the resin film 528a, thereby forming the partition wall 528. By curvedly shaping the upper end of the partition wall 528, it is possible to improve the coverage of the electron injection layer 109 to be formed later. For example, when a positive photosensitive acrylic resin is used as the resin film 528a, it is preferable that the upper end of the partition wall 528 has a curved surface having a radius of curvature (0.2 μm or more and 3 μm or less).

[0335] Next, the electron injection layer 109 is formed over the insulating layer 107, the electron transport layers (108B, 108G, 108R, and 108PS), and the partition 528. The materials described in the above embodiment can be used for forming the electron injection layer 109. Note that the electron injection layer 109 is formed by, for example, a vacuum deposition method.

[0336] 7A, an electrode 552 is formed on the electron-injection layer 109. The electrode 552 is formed by, for example, a vacuum deposition method.

[0337] Through the above steps, EL layers 103B, 103G, 103R, and light receiving layers 103PS in light emitting devices 550B, 550G, and 550R, and light receiving device 550PS can be processed separately.

[0338] As described above, in the process of separating the EL layer 103 and the light receiving layer 103PS, a high-definition light receiving and emitting device (display panel) can be manufactured by forming a pattern using photolithography. In addition, the end (side) of each layer of the EL layer and the light receiving layer processed by pattern formation using photolithography has a shape having approximately the same surface (or being located on approximately the same plane). In addition, by forming a pattern using photolithography, it is possible to suppress the occurrence of crosstalk occurring between adjacent light emitting devices and light receiving devices. In addition, each end (side) processed by pattern formation using photolithography has a gap 580 between adjacent devices. In FIG. 7(C), when the gap 580 is represented by the distance between the EL layers of adjacent light emitting devices as SE, the smaller the distance SE, the higher the aperture ratio and the higher the definition. On the other hand, the larger the distance SE, the higher the manufacturing yield can be because the influence of the manufacturing process variation between adjacent light emitting devices can be tolerated. Since the light-emitting devices fabricated according to the present specification are suitable for miniaturization processes, the distance SE between the EL layers of adjacent light-emitting devices can be 0.5 μm to 5 μm, preferably 1 μm to 3 μm, more preferably 1 μm to 2.5 μm, and even more preferably 1 μm to 2 μm. Typically, the distance SE is preferably 1 μm to 2 μm (e.g., 1.5 μm or close thereto).

[0339] In this specification etc., a device fabricated using a metal mask or FMM (fine metal mask, high-definition metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification etc., a device fabricated without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure. Since a light emitting and receiving device with an MML structure is fabricated without using a metal mask, it has a higher degree of design freedom in terms of pixel arrangement, pixel shape, etc. than a light emitting and receiving device with an FMM structure or an MM structure.

[0340] The island-shaped EL layer of the MML-structure light-receiving / emitting device is not formed by a metal mask pattern, but is formed by processing the EL layer after it is formed. This makes it possible to realize light-receiving / emitting devices with higher resolution or a higher aperture ratio than ever before. Furthermore, since the EL layer can be made separately for each color, it is possible to realize light-receiving / emitting devices that are extremely vivid, have high contrast, and have high display quality. Furthermore, by providing a sacrificial layer on the EL layer, damage to the EL layer during the manufacturing process can be reduced, thereby improving the reliability of the light-emitting device.

[0341] In the light-emitting device 550 shown in Figures 3(A) and 7(A), the width of the EL layer 103 is approximately equal to the width of the electrode 551, and in the light-receiving device 550PS, the width of the light-receiving layer 103PS is approximately equal to the width of the electrode 551PS, but one embodiment of the present invention is not limited to this.

[0342] In the light-emitting device 550, the width of the EL layer 103 may be smaller than the width of the electrode 551. In the light-receiving device 550PS, the width of the light-receiving layer 103PS may be smaller than the width of the electrode 551PS. Fig. 7(B) shows an example in which the width of the EL layer 103B is smaller than the width of the electrode 551B in the light-emitting device 550B.

[0343] In addition, in the light-emitting device 550, the width of the EL layer 103 may be greater than the width of the electrode 551. In the light-receiving device 550PS, the width of the light-receiving layer 103PS may be greater than the width of the electrode 551PS. Fig. 7(C) shows an example in which the width of the EL layer 103B is greater than the width of the electrode 551R in the light-emitting device 550B.

[0344] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0345] (Embodiment 4) In this embodiment, the device 720 will be described with reference to Figs. 8 to 10. The device 720 shown in Figs. 8 to 10 is a light-emitting device because it has the light-emitting device described in the previous embodiment, but the device 720 described in this embodiment can also be called a display panel or a display device because it can be applied to a display unit of an electronic device or the like. In addition, when the device is configured to use the light-emitting device as a light source and to include a light-receiving device that can receive light from the light-emitting device, it can also be called a light-receiving and emitting device. Note that these light-emitting devices, display panels, display devices, and light-receiving and emitting devices are configured to include at least a light-emitting device.

[0346] The light-emitting device, the display panel, the display device, and the light-receiving and light-emitting device of the present embodiment can be a high-resolution or large light-emitting device, a display panel, a display device, and a light-receiving and light-emitting device. Therefore, the light-emitting device, the display panel, the display device, and the light-receiving and light-emitting device of the present embodiment can be used for the display unit of electronic devices having a relatively large screen, such as a television device, a desktop or notebook personal computer, a monitor for a computer, digital signage, a large game machine such as a pachinko machine, as well as a digital camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a smartphone, a wristwatch-type terminal, a tablet terminal, a mobile information terminal, and an audio reproducing device.

[0347] FIG. 8A shows a top view of such a device (including a light-emitting device, a display panel, a display device, and a light-receiving and light-emitting device) 720.

[0348] In Fig. 8(A), a device 720 has a structure in which a substrate 710 and a substrate 711 are bonded together. The device 720 also has a display region 701, a circuit 704, and wiring 706. Note that the display region 701 has a plurality of pixels, and a pixel 703(i,j) shown in Fig. 8(A) has a pixel 703(i+1,j) adjacent to the pixel 703(i,j) as shown in Fig. 8(B).

[0349] 8A, the device 720 has an example in which an IC (integrated circuit) 712 is provided on a substrate 710 by a chip on glass (COG) method or a chip on film (COF) method. Note that an IC having a scanning line driver circuit or a signal line driver circuit, for example, can be used as the IC 712. In FIG. 8A, an IC having a signal line driver circuit is used as the IC 712, and a configuration having a scanning line driver circuit is shown as the circuit 704.

[0350] The wiring 706 has a function of supplying signals and power to the display region 701 and the circuit 704. The signals and power are input to the wiring 706 from the outside via a flexible printed circuit (FPC) 713, or are input to the wiring 706 from an IC 712. Note that the device 720 may not include an IC. Alternatively, the IC may be mounted on the FPC by a COF method or the like.

[0351] FIG. 8B shows pixels 703(i,j) and 703(i+1,j) in the display region 701. That is, the pixel 703(i,j) can be configured to have a plurality of subpixels having light-emitting devices that emit different colors. Alternatively, in addition to the above, the pixel can be configured to include a plurality of subpixels having light-emitting devices that emit the same color. For example, the pixel can be configured to have three types of subpixels. The three subpixels can be subpixels of three colors, red (R), green (G), and blue (B), or subpixels of three colors, yellow (Y), cyan (C), and magenta (M). Alternatively, the pixel can be configured to have four types of subpixels. The four subpixels can be subpixels of four colors, R, G, B, and white (W), or subpixels of four colors, R, G, B, and Y. Specifically, the pixel 703(i,j) may be composed of a sub-pixel 702B(i,j) that displays blue, a sub-pixel 702G(i,j) that displays green, and a sub-pixel 702R(i,j) that displays red.

[0352] Furthermore, the subpixel may have not only a light-emitting device but also a light-receiving device. When the subpixel has a light-receiving device, the device 720 is also called a light-receiving / light-emitting device.

[0353] Pixels 703(i,j) shown in Fig. 8(C) to Fig. 8(F) show examples of various layouts including subpixels 702PS(i,j) having light receiving devices. The pixel arrangement shown in Fig. 8(C) is a stripe arrangement, and the pixel arrangement shown in Fig. 8(D) is a matrix arrangement. The pixel arrangement shown in Fig. 8(E) has a configuration in which three subpixels (subpixels R, G, and PS) are vertically arranged next to one subpixel (subpixel B). The pixel arrangement shown in Fig. 8(F) has a configuration in which three vertically elongated subpixels G, B, and R are horizontally arranged, and below them, subpixel PS and horizontally elongated subpixel IR are horizontally arranged. Although the wavelength of light detected by subpixel 702PS(i,j) is not particularly limited, it is preferable that the light receiving device of subpixel 702PS(i,j) is sensitive to light emitted by the light emitting device of subpixel 702R(i,j), subpixel 702G(i,j), subpixel 702B(i,j), or subpixel 702IR(i,j). For example, it is preferable to detect one or more of light in wavelength ranges such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red, and light in the infrared wavelength range.

[0354] 8(F), a subpixel 702IR(i,j) that emits infrared light may be added to the above set to form pixel 703(i,j). Specifically, a subpixel that emits light that includes light having a wavelength of 650 nm or more and 1000 nm or less may be used for pixel 703(i,j).

[0355] The arrangement of the sub-pixels is not limited to the configuration shown in Fig. 8, and various methods can be applied. Examples of the arrangement of the sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a Pentile arrangement.

[0356] Examples of the top surface shape of the subpixel include a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a shape with rounded corners of these polygons, an ellipse, a circle, etc. The top surface shape of the subpixel here corresponds to the top surface shape of the light-emitting region of the light-emitting device.

[0357] Furthermore, when a pixel has not only a light-emitting device but also a light-receiving device, the pixel has a light-receiving function, and therefore it is possible to detect the contact or proximity of an object while displaying an image. For example, in addition to displaying an image using all of the sub-pixels of the light-emitting device, some of the sub-pixels can emit light as a light source and the remaining sub-pixels can display an image.

[0358] It is preferable that the light receiving area of ​​the sub-pixel 702PS(i,j) is smaller than the light emitting area of ​​the other sub-pixels. The smaller the light receiving area, the narrower the imaging range, making it possible to suppress blurring of the imaging result and improve the resolution. Therefore, by using the sub-pixel 702PS(i,j), it is possible to perform imaging with high definition or high resolution. For example, the sub-pixel 702PS(i,j) can be used to perform imaging for personal authentication using a fingerprint, palm print, iris, pulse shape (including vein shape and artery shape), face, or the like.

[0359] The subpixel 702PS(i,j) can be used as a touch sensor (also called a direct touch sensor) or a near-touch sensor (also called a hover sensor, hover touch sensor, non-contact sensor, or touchless sensor). For example, the subpixel 702PS(i,j) preferably detects infrared light. This allows touch detection even in a dark place.

[0360] Here, the touch sensor or near-touch sensor can detect the proximity or contact of an object (such as a finger, a hand, or a pen). The touch sensor can detect an object by directly contacting the light receiving / emitting device with the object. The near-touch sensor can detect the object even if the object does not contact the light receiving / emitting device. For example, it is preferable that the light receiving / emitting device can detect the object when the distance between the light receiving / emitting device and the object is in the range of 0.1 mm to 300 mm, preferably 3 mm to 50 mm. With this configuration, it is possible to operate the light receiving / emitting device without the object directly touching it, in other words, it is possible to operate the light receiving / emitting device in a non-contact (touchless) manner. With the above configuration, it is possible to reduce the risk of the light receiving / emitting device becoming dirty or scratched, or it is possible to operate the light receiving / emitting device without the object directly touching dirt (such as dust, bacteria, or viruses) attached to the light receiving / emitting device.

[0361] In order to capture high-definition images, it is preferable that the sub-pixels 702PS(i,j) are provided in all pixels of the light emitting and receiving device. On the other hand, when used in a touch sensor or near-touch sensor, the sub-pixels 702PS(i,j) do not require high accuracy compared to capturing images of fingerprints, and therefore may be provided in some pixels of the light emitting and receiving device. The detection speed can be increased by making the number of sub-pixels 702PS(i,j) in the light emitting and receiving device smaller than the number of sub-pixels 702R(i,j), etc.

[0362] Next, an example of a pixel circuit of a subpixel having a light-emitting device will be described with reference to Fig. 9(A). The pixel circuit 530 shown in Fig. 9(A) has a light-emitting device (EL) 550, a transistor M15, a transistor M16, a transistor M17, and a capacitor C3. A light-emitting diode can be used as the light-emitting device (EL) 550. In particular, it is preferable to use the light-emitting device described in the previous embodiment as the light-emitting device (EL) 550.

[0363] 9A, the transistor M15 has a gate electrically connected to the wiring VG, one of its source and drain electrically connected to the wiring VS, and the other of its source and drain electrically connected to one electrode of the capacitor C3 and the gate of the transistor M16. One of the source and drain of the transistor M16 is electrically connected to the wiring V4, and the other is electrically connected to the anode of the light-emitting device (EL) 550 and one of the source and drain of the transistor M17. The transistor M17 has a gate electrically connected to the wiring MS, and the other of its source and drain electrically connected to the wiring OUT2. The cathode of the light-emitting device (EL) 550 is electrically connected to the wiring V5.

[0364] A constant potential is supplied to the wiring V4 and the wiring V5. The anode side of the light emitting device (EL) 550 can be set to a high potential, and the cathode side can be set to a lower potential than the anode side. The transistor M15 is controlled by a signal supplied to the wiring VG, and functions as a selection transistor for controlling the selection state of the pixel circuit 530. The transistor M16 also functions as a drive transistor for controlling the current flowing through the light emitting device (EL) 550 according to the potential supplied to the gate. When the transistor M15 is in a conductive state, the potential supplied to the wiring VS is supplied to the gate of the transistor M16, and the light emission brightness of the light emitting device (EL) 550 can be controlled according to the potential. The transistor M17 is controlled by a signal supplied to the wiring MS, and has a function of outputting the potential between the transistor M16 and the light emitting device (EL) 550 to the outside via the wiring OUT2.

[0365] Note that it is preferable that the transistors M11, M12, M13, and M14 in the pixel circuit 531 in Figures 9(A) and 9(B), and the transistors M15, M16, and M17 in the pixel circuit 530 each include a transistor using a metal oxide (oxide semiconductor) for a semiconductor layer in which a channel is formed.

[0366] A transistor using a metal oxide, which has a wider band gap and a lower carrier density than silicon, can achieve an extremely small off-state current. Therefore, the small off-state current allows the charge stored in the capacitor connected in series to the transistor to be held for a long period of time. Therefore, it is preferable to use transistors using an oxide semiconductor for the transistor M11, the transistor M12, and the transistor M15, which are connected in series to the capacitor C2 or the capacitor C3. In addition, by using transistors using an oxide semiconductor for the other transistors as well, the manufacturing cost can be reduced.

[0367] Alternatively, the transistors M11 to M17 may each be a transistor in which silicon is used as a semiconductor in which a channel is formed. In particular, the use of silicon with high crystallinity, such as single crystal silicon or polycrystalline silicon, is preferable because high field-effect mobility can be achieved and faster operation can be achieved.

[0368] Alternatively, a structure in which an oxide semiconductor is used for at least one of the transistors M11 to M17 and silicon is used for the remaining transistors may be used.

[0369] Next, an example of a pixel circuit of a sub-pixel having a light receiving device will be described with reference to Fig. 9(B). The pixel circuit 531 shown in Fig. 9(B) has a light receiving device (PD) 560, a transistor M11, a transistor M12, a transistor M13, a transistor M14, and a capacitance element C2. Here, an example is shown in which a photodiode is used as the light receiving device (PD) 560.

[0370] 9B, the anode of the light receiving device (PD) 560 is electrically connected to the wiring V1, and the cathode is electrically connected to one of the source and drain of the transistor M11. The gate of the transistor M11 is electrically connected to the wiring TX, and the other of the source and drain is electrically connected to one electrode of the capacitance element C2, one of the source and drain of the transistor M12, and the gate of the transistor M13. The gate of the transistor M12 is electrically connected to the wiring RE1, and the other of the source and drain is electrically connected to the wiring V2. The source or drain of the transistor M13 is electrically connected to the wiring V3, and the other of the source or drain is electrically connected to one of the source or drain of the transistor M14. The gate of the transistor M14 is electrically connected to the wiring SE1, and the other of the source or drain is electrically connected to the wiring OUT1.

[0371] A constant potential is supplied to the wiring V1, the wiring V2, and the wiring V3. When the light receiving device (PD) 560 is driven with a reverse bias, a potential higher than the potential of the wiring V1 is supplied to the wiring V2. The transistor M12 is controlled by a signal supplied to the wiring RE1, and has a function of resetting the potential of the node connected to the gate of the transistor M13 to the potential supplied to the wiring V2. The transistor M11 is controlled by a signal supplied to the wiring TX, and has a function of controlling the timing at which the potential of the node changes according to the current flowing through the light receiving device (PD) 560. The transistor M13 functions as an amplification transistor that outputs according to the potential of the node. The transistor M14 is controlled by a signal supplied to the wiring SE1, and functions as a selection transistor for reading out the output according to the potential of the node in an external circuit connected to the wiring OUT1.

[0372] Note that although the transistors are shown as n-channel transistors in FIGS. 9A and 9B, p-channel transistors can also be used.

[0373] The transistors included in the pixel circuit 530 and the transistors included in the pixel circuit 531 are preferably formed side by side on the same substrate. In particular, it is preferable that the transistors included in the pixel circuit 530 and the transistors included in the pixel circuit 531 are mixed and periodically arranged in one region.

[0374] It is also preferable to provide one or more layers having one or both of a transistor and a capacitor element at a position overlapping with the light receiving device (PD) 560 or the light emitting device (EL) 550. This can reduce the effective area occupied by each pixel circuit, and realize a high-definition light receiving section or display section.

[0375] Next, an example of a specific structure of a transistor that can be applied to the pixel circuits described in Fig. 9(A) and Fig. 9(B) is shown in Fig. 9(C). Note that as the transistor, a bottom-gate transistor, a top-gate transistor, or the like can be appropriately used.

[0376] 9C includes a semiconductor film 508, a conductive film 504, an insulating film 506, a conductive film 512A, and a conductive film 512B. The transistor is formed over, for example, an insulating film 501C. The transistor also includes an insulating film 516 (insulating films 516A and 516B) and an insulating film 518.

[0377] The semiconductor film 508 has a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B. The semiconductor film 508 has a region 508C between the region 508A and the region 508B.

[0378] The conductive film 504 has a region overlapping with the region 508C, and functions as a gate electrode.

[0379] The insulating film 506 has a region sandwiched between the semiconductor film 508 and the conductive film 504. The insulating film 506 functions as a first gate insulating film.

[0380] The conductive film 512A has either a function of a source electrode or a function of a drain electrode, and the conductive film 512B has the other function of a source electrode or a drain electrode.

[0381] The conductive film 524 can be used for a transistor. The conductive film 524 has a region where the semiconductor film 508 is sandwiched between the conductive film 524 and the conductive film 504. The conductive film 524 functions as a second gate electrode. The insulating film 501D is sandwiched between the semiconductor film 508 and the conductive film 524 and functions as a second gate insulating film.

[0382] The insulating film 516 functions as, for example, a protective film that covers the semiconductor film 508. As the insulating film 516, specifically, for example, a film containing a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used.

[0383] The insulating film 518 is preferably formed using a material that has a function of suppressing diffusion of, for example, oxygen, hydrogen, water, an alkali metal, an alkaline earth metal, and the like. Specifically, for example, silicon nitride, silicon oxynitride, aluminum nitride, aluminum oxynitride, or the like can be used for the insulating film 518. The number of oxygen atoms contained in silicon oxynitride and the number of nitrogen atoms contained in aluminum oxynitride are preferably greater than the number of oxygen atoms contained in the silicon oxynitride and the aluminum oxynitride.

[0384] Note that a semiconductor film to be used for a transistor in a driver circuit can be formed in a process of forming a semiconductor film to be used for a transistor in a pixel circuit. For example, a semiconductor film having the same composition as that of the semiconductor film to be used for a transistor in a pixel circuit can be used for the driver circuit.

[0385] The semiconductor film 508 preferably contains, for example, indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0386] In particular, it is preferable to use an oxide containing In, Ga, and Zn (also referred to as IGZO) as the semiconductor film 508. Alternatively, it is preferable to use an oxide containing In, Sn, and Zn. Alternatively, it is preferable to use an oxide containing In, Ga, Sn, and Zn. Alternatively, it is preferable to use an oxide containing In, Al, and Zn (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing In, Al, Ga, and Zn (also referred to as IAGZO).

[0387] When the semiconductor film is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. The atomic ratios of metal elements in such an In-M-Zn oxide include a composition of In:M:Zn=1:1:1 or nearby, In:M:Zn=1:1:1.2 or nearby, In:M:Zn=1:3:2 or nearby, In:M:Zn=1:3:4 or nearby, In:M:Zn=2:1:3 or nearby, In:M:Zn=3:1:2 or nearby, In:M:Zn=4:2:3 or a composition in the vicinity thereof, In:M:Zn=4:2:4.1 or a composition in the vicinity thereof, In:M:Zn=5:1:3 or a composition in the vicinity thereof, In:M:Zn=5:1:6 or a composition in the vicinity thereof, In:M:Zn=5:1:7 or a composition in the vicinity thereof, In:M:Zn=5:1:8 or a composition in the vicinity thereof, In:M:Zn=6:1:6 or a composition in the vicinity thereof, In:M:Zn=5:2:5 or a composition in the vicinity thereof, etc. Note that a composition in the vicinity thereof includes a range of ±30% of the desired atomic ratio.

[0388] For example, when describing a composition with an atomic ratio of In:Ga:Zn=4:2:3 or thereabout, it includes cases where, when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. When describing a composition with an atomic ratio of In:Ga:Zn=5:1:6 or thereabout, it includes cases where, when In is 5, Ga is more than 0.1 and 2 or less, and Zn is more than 5 and 7 or less. When describing a composition with an atomic ratio of In:Ga:Zn=1:1:1 or thereabout, it includes cases where, when In is 1, Ga is more than 0.1 and 2 or less, and Zn is more than 0.1 and 2 or less.

[0389] The crystallinity of a semiconductor material used in a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially having a crystalline region) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0390] When a metal oxide is used for the semiconductor film 508, the device 720 has a configuration in which a metal oxide is used for the semiconductor film and a light-emitting device has an MML (metal maskless) structure. With this configuration, it is possible to extremely reduce a leakage current that may flow through a transistor and a leakage current that may flow between adjacent light-emitting devices (also called a lateral leakage current or a side leakage current). In addition, with the above configuration, when an image is displayed on a display device, an observer can observe one or more of image sharpness, image sharpness, high saturation, and a high contrast ratio. Note that, with a configuration in which the leakage current that may flow through a transistor and the lateral leakage current between light-emitting devices are extremely low, it is possible to achieve a display (also called a true black display) with extremely little light leakage (so-called black floating) that may occur during black display.

[0391] Silicon may be used for the semiconductor film 508. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, it is preferable to use a transistor having low temperature polysilicon (LTPS (Low Temperature Poly Silicon)) in the semiconductor layer (hereinafter, also referred to as an LTPS transistor). The LTPS transistor has high field effect mobility and good frequency characteristics.

[0392] By using silicon transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, simplifying the external circuits mounted on the light-emitting device and reducing component and mounting costs.

[0393] In addition, the configuration of the transistors used in the display panel may be appropriately selected according to the screen size of the display panel. For example, when single crystal Si transistors are used as the transistors of the display panel, the display panel can be applied to a screen size with a diagonal size of 0.1 inch to 3 inches. When LTPS transistors are used as the transistors of the display panel, the display panel can be applied to a screen size with a diagonal size of 0.1 inch to 30 inches, preferably 1 inch to 30 inches. When LTPO (a configuration in which LTPS transistors and OS transistors are combined) is used in the display panel, the display panel can be applied to a screen size with a diagonal size of 0.1 inch to 50 inches, preferably 1 inch to 50 inches. When OS transistors (transistors having metal oxide in a semiconductor in which a channel is formed) are used as the transistors of the display panel, the display panel can be applied to a screen size with a diagonal size of 0.1 inch to 200 inches, preferably 50 inch to 100 inches.

[0394] It is very difficult to increase the size of a single crystal Si transistor due to the size of a single crystal Si substrate. In addition, since a laser crystallization device is used in the manufacturing process of an LTPS transistor, it is difficult to accommodate large sizes (typically, screen sizes exceeding 30 inches in diagonal size). On the other hand, since an OS transistor is not restricted by the use of a laser crystallization device or the like in the manufacturing process, or can be manufactured at a relatively low process temperature (typically 450° C. or lower), it is possible to accommodate display panels with a relatively large area (typically, diagonal sizes of 50 inches to 100 inches). In addition, LTPO can be applied to display panel sizes in the range between the size when an LTPS transistor is used and the size when an OS transistor is used (typically, diagonal sizes of 1 inch to 50 inches).

[0395] Next, a cross-sectional view of the light emitting and receiving device is shown in Fig. 10. Fig. 10 shows a cross-sectional view of the device shown in Fig. 8(A).

[0396] The cross-sectional view of FIG. 10 shows a cross-sectional view of a part of the region including the FPC 713 and the wiring 706, and a part of the display region 701 including the pixel 703(i,j).

[0397] In Fig. 10, the device 720 has a functional layer 520 between a first substrate 510 and a second substrate 770. The functional layer 520 includes the transistors (M11, M12, M13, M14, M15, M16, M17) and capacitance elements (C2, C3) described in Fig. 9, as well as wiring (VS, VG, V1, V2, V3, V4, V5) that electrically connects them. Note that in Fig. 10, the functional layer 520 shows a configuration including a pixel circuit 530X(i,j) and a pixel circuit 530S(i,j), and a circuit GD, but is not limited thereto.

[0398] In addition, the pixel circuits (for example, pixel circuits 530X(i,j) and 530S(i,j) shown in FIG. 10) formed in the functional layer 520 are electrically connected to the light-emitting devices and light-receiving devices (for example, light-emitting devices 550X(i,j) and light-receiving devices 550S(i,j) shown in FIG. 10) formed on the functional layer 520. Specifically, the light-emitting devices 550X(i,j) are electrically connected to the pixel circuits 530X(i,j) via wiring 591X, and the light-receiving devices 550S(i,j) are electrically connected to the pixel circuits 530S(i,j) via wiring 591S. In addition, an insulating layer 705 is provided on the functional layer 520, the light-emitting devices, and the light-receiving devices, and the insulating layer 705 has a function of bonding the second substrate 770 and the functional layer 520 together.

[0399] Note that a substrate provided with touch sensors arranged in a matrix can be used as the second substrate 770. For example, a substrate provided with a capacitive touch sensor or an optical touch sensor can be used as the second substrate 770. In this way, the light-emitting and receiving device of one embodiment of the present invention can be used as a touch panel.

[0400] Note that the structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0401] (Embodiment 5) In this embodiment, the structure of an electronic device of one embodiment of the present invention will be described with reference to FIGS.

[0402] 11(A) to 13(B) are diagrams illustrating the configuration of an electronic device of one embodiment of the present invention. FIG. 11(A) is a block diagram of an electronic device, and FIG. 11(B) to FIG. 11(E) are perspective views illustrating the configuration of the electronic device. FIG. 12(A) to FIG. 12(E) are perspective views illustrating the configuration of the electronic device. FIG. 13(A) and FIG. 13(B) are perspective views illustrating the configuration of the electronic device.

[0403] An electronic device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 11A).

[0404] The arithmetic unit 5210 has a function of receiving operation information and a function of supplying image information based on the operation information.

[0405] The input / output device 5220 has a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function of supplying operation information, and a function of being supplied with image information. The input / output device 5220 also has a function of supplying detection information, a function of supplying communication information, and a function of being supplied with communication information.

[0406] The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on an operation by a user of the electronic device 5200B.

[0407] Specifically, the input unit 5240 can use a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, an eye-gaze input device, a posture detection device, or the like.

[0408] The display portion 5230 has a function of displaying a display panel and displaying image information. For example, the display panel described in Embodiment 3 can be used for the display portion 5230.

[0409] The detection unit 5250 has a function of supplying detection information, for example, a function of detecting the surrounding environment in which the electronic device is used and supplying the detected information.

[0410] Specifically, the detection unit 5250 can include an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like.

[0411] The communication unit 5290 has a function of receiving and supplying communication information. For example, it has a function of connecting to other electronic devices or communication networks by wireless communication or wired communication. Specifically, it has functions such as wireless local area communication, telephone communication, and short-distance wireless communication.

[0412] FIG. 11B shows an electronic device having an outer shape along a cylindrical pillar or the like. One example is a digital signage. The display panel of one embodiment of the present invention can be applied to the display portion 5230. Note that the display panel may have a function of changing the display method depending on the illuminance of the usage environment. The display panel may also have a function of detecting the presence of a person and changing the display content. Thus, the display panel can be installed on a pillar of a building, for example. Alternatively, advertisements, guidance, or the like can be displayed.

[0413] Fig. 11(C) shows an electronic device having a function of generating image information based on the trajectory of a pointer used by a user. Examples include an electronic whiteboard, an electronic bulletin board, an electronic signboard, etc. Specifically, a display panel having a diagonal length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Alternatively, multiple display panels can be arranged to be used in one display area. Alternatively, multiple display panels can be arranged to be used in a multi-screen.

[0414] FIG. 11D shows an electronic device that can receive information from another device and display it on the display unit 5230. An example of the electronic device is a wearable electronic device. Specifically, several options can be displayed, or a user can select some of the options and send the selected information back to a sender of the information. Alternatively, the electronic device has a function of changing the display method according to the illuminance of the usage environment. This can reduce the power consumption of the wearable electronic device, for example. Alternatively, an image can be displayed on the wearable electronic device so that the electronic device can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0415] 11(E) shows an electronic device having a display unit 5230 with a curved surface that is gently curved along the side surface of the housing. An example is a mobile phone. The display unit 5230 has a display panel, and the display panel has a function of displaying information on, for example, the front, side, top, and back of the mobile phone. This allows information to be displayed not only on the front surface of the mobile phone, but also on the side, top, and back.

[0416] FIG. 12A shows an electronic device that can receive information from the Internet and display it on the display unit 5230. An example of the electronic device is a smartphone. For example, a created message can be confirmed on the display unit 5230. Or, the created message can be transmitted to another device. Or, for example, the smartphone has a function of changing the display method according to the illuminance of the usage environment. This can reduce the power consumption of the smartphone. Or, for example, an image can be displayed on the smartphone so that the smartphone can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0417] FIG. 12(B) shows an electronic device in which a remote controller can be used as the input unit 5240. An example is a television system. Alternatively, for example, information can be received from a broadcasting station or the Internet and displayed on the display unit 5230. Alternatively, a user can be photographed using the detection unit 5250. Alternatively, a video of the user can be transmitted. Alternatively, a viewing history of the user can be acquired and provided to a cloud service. Alternatively, recommendation information can be acquired from a cloud service and displayed on the display unit 5230. Alternatively, a program or video can be displayed based on the recommendation information. Alternatively, for example, the device has a function of changing the display method according to the illuminance of the usage environment. As a result, the video can be displayed on the television system so that it can be used suitably even when strong external light shines into the room on a sunny day.

[0418] 12C shows an electronic device that can receive learning materials from the Internet and display them on the display unit 5230. An example is a tablet computer. Alternatively, a report can be input using the input unit 5240 and transmitted to the Internet. Alternatively, a correction result or evaluation of the report can be obtained from a cloud service and displayed on the display unit 5230. Alternatively, suitable learning materials can be selected and displayed based on the evaluation.

[0419] For example, an image signal can be received from another electronic device and displayed on the display unit 5230. Alternatively, the display unit 5230 can be used as a sub-display by leaning it against a stand or the like. This allows images to be displayed on the tablet computer so that it can be used suitably even in an environment with strong external light, such as outdoors on a sunny day.

[0420] FIG. 12D shows an electronic device having a plurality of display units 5230. One example is a digital camera. For example, an image can be captured by the detection unit 5250 and displayed on the display unit 5230. Alternatively, the captured image can be displayed on the detection unit. Alternatively, the captured image can be decorated using the input unit 5240. Alternatively, a message can be attached to the captured image. Alternatively, the captured image can be transmitted to the Internet. Alternatively, the electronic device has a function of changing the capture conditions according to the illuminance of the usage environment. This allows the subject to be displayed on the digital camera so that it can be viewed favorably even in an environment with strong external light, such as outdoors on a sunny day.

[0421] FIG. 12(E) shows an electronic device that can control another electronic device by using the electronic device of this embodiment as a master while using the other electronic device as a slave. One example is a portable personal computer. For example, a part of the image information can be displayed on the display unit 5230, and another part of the image information can be displayed on the display unit of the other electronic device. Alternatively, an image signal can be supplied. Alternatively, information to be written can be obtained from an input unit of the other electronic device using the communication unit 5290. This allows a wide display area to be used, for example, by using a portable personal computer.

[0422] FIG. 13(A) shows an electronic device having a detection unit 5250 that detects acceleration or orientation. An example is a goggle-type electronic device. Alternatively, the detection unit 5250 can supply information related to the position of the user or the direction in which the user is facing. Alternatively, the electronic device can generate image information for the right eye and image information for the left eye based on the position of the user or the direction in which the user is facing. Alternatively, the display unit 5230 has a display area for the right eye and a display area for the left eye. This allows, for example, an image of a virtual reality space that provides an immersive feeling to be displayed on the goggle-type electronic device.

[0423] FIG. 13B shows an electronic device having a detection unit 5250 that detects an imaging device, acceleration, or orientation. An example is a glasses-type electronic device. Alternatively, the detection unit 5250 can supply information related to the position of the user or the direction in which the user is facing. Alternatively, the electronic device can generate image information based on the position of the user or the direction in which the user is facing. This makes it possible to display, for example, information attached to a real landscape. Alternatively, an image of an augmented reality space can be displayed on the glasses-type electronic device.

[0424] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0425] (Embodiment 6) In this embodiment, a structure in which the light-emitting device described in the previous embodiment is used as a lighting device will be described with reference to Fig. 14. Fig. 14(A) is a cross-sectional view taken along line ef in a top view of the lighting device shown in Fig. 14(B).

[0426] In the lighting device of this embodiment, a first electrode 401 is formed on a light-transmitting substrate 400, which is a support. The first electrode 401 corresponds to the first electrode 101 in the above embodiment. When light is extracted from the first electrode 401 side, the first electrode 401 is formed of a light-transmitting material.

[0427] A pad 412 for supplying a voltage to the second electrode 404 is formed on the substrate 400 .

[0428] An EL layer 403 is formed over the first electrode 401. The EL layer 403 has a structure corresponding to the EL layer 103 in Embodiment 2. For the structure thereof, refer to the description therein.

[0429] A second electrode 404 is formed to cover the EL layer 403. The second electrode 404 corresponds to the second electrode 102 in the previous embodiment. When light is extracted from the first electrode 401 side, the second electrode 404 is formed of a material with high reflectivity. The second electrode 404 is connected to a pad 412 to supply a voltage.

[0430] As described above, the lighting device described in this embodiment has a light-emitting device including the first electrode 401, the EL layer 403, and the second electrode 404. Since the light-emitting device has high emission efficiency, the lighting device in this embodiment can have low power consumption.

[0431] The substrate 400 on which the light-emitting device having the above structure is formed and a sealing substrate 407 are fixed and sealed using sealing materials (405, 406), thereby completing the lighting device. Either one of the sealing materials 405 and 406 may be used. Also, a desiccant may be mixed into the inner sealing material 406 (not shown in FIG. 14(B)), which can adsorb moisture and improve reliability.

[0432] Moreover, the pad 412 and a part of the first electrode 401 can be extended outside the sealing materials 405 and 406 to serve as an external input terminal. Also, an IC chip 420 equipped with a converter or the like may be provided thereon.

[0433] (Embodiment 7) In this embodiment, an application example of a lighting device manufactured using a light-emitting device which is one embodiment of the present invention or a light-emitting device which is a part of the light-emitting device will be described with reference to FIGS.

[0434] As an indoor lighting device, it can be applied as a ceiling light 8001. The ceiling light 8001 is available in two types: a direct ceiling mount type and a ceiling recessed type. Such lighting devices are constructed by combining a light emitting device with a housing and a cover. It can also be applied to a cord pendant type (a type suspended from the ceiling by a cord).

[0435] The footlight 8002 can also irradiate light onto the floor surface to improve the safety of the feet. For example, it is effective to use it in bedrooms, stairs, and corridors. In that case, the size and shape can be changed appropriately according to the size and structure of the room. It is also possible to make a stationary lighting device consisting of a combination of a light-emitting device and a support stand.

[0436] The sheet-like lighting 8003 is a thin sheet-like lighting device. Since it is attached to a wall surface, it does not take up much space and can be used for a wide range of purposes. It is also easy to make it larger. It can also be used on curved walls, housings, etc.

[0437] It is also possible to use a lighting device 8004 in which light from a light source is controlled to only a desired direction.

[0438] The desk lamp 8005 has a light source 8006, and as the light source 8006, a light-emitting device which is one embodiment of the present invention or a light-emitting device which is a part of the light-emitting device can be used.

[0439] In addition to the above, by applying the light-emitting device of one embodiment of the present invention or a light-emitting device that is a part of the light-emitting device to a piece of furniture provided in a room, the lighting device can have a function as the piece of furniture.

[0440] As described above, various lighting devices using the light-emitting device can be obtained. Note that these lighting devices are included in one embodiment of the present invention.

[0441] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiment modes. EXAMPLES

[0442] (Synthesis Example 1) In this example, 4,4'-(diphenylsilanediyl)bis{N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylaniline} (abbreviation: PSiYGA2) (structural formula (100)), which is an organic compound according to one embodiment of the present invention, was synthesized and various measurements were performed. The structure of PSiYGA2 is shown below.

[0443] [ka]

[0444] Into a 300mL three-neck flask, 1.5g (3.0mmol) of bis(4-bromophenyl)diphenylsilane, 2.0g (6.0mmol) of N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylaniline, 1.0g (10mmol) of sodium tert-butoxide (abbreviation: tBuONa), and 0.1mg (0.1mmol) of bis(dibenzylideneacetone)palladium(0) (abbreviation: Pd(dba)2) were added, and the atmosphere in the flask was replaced with nitrogen. To this mixture, 100mL of dehydrated xylene was added. After this mixture was degassed while stirring under reduced pressure, 0.8mL (0.4mmol) of tri(tert-butyl)phosphine (abbreviation: (tBu)3P) (10wt% hexane solution) was added. This mixture was heated and stirred at 120°C for 6 hours under a nitrogen stream to react. After the reaction, 150 mL of toluene was added to the reaction mixture, and the suspension was filtered through Florisil and Celite. The filtrate was concentrated and purified by silica gel column chromatography (the developing solvent was a mixture of toluene and hexane), and then recrystallized to obtain the target white powder in an amount of 2.1 g and a yield of 70%. The reaction scheme of the above synthesis method is shown below in (a-1).

[0445] [ka]

[0446] The Rf value of silica gel thin layer chromatography (TLC) (eluent: ethyl acetate:hexane=1:5) was 0.49 for the target compound and 0.41 for bis(4-bromophenyl)diphenylsilane.

[0447] PSiYGA2 after sublimation purification 1 The H NMR spectrum is shown in FIG. 1 The measurement results by 1 H NMR are shown below. From these results, it was confirmed that PSiYGA2 was obtained.

[0448] 1H NMR(CDCl3,300MHz):δ(ppm)=7.11(t,J=7.2Hz,2H),7.17(d,J=8.4,4H),7.2 5-7.44(m,34H),7.51(d,J=8.4,4H),7.61-7.65(m,4H),8.13(d,J=7.8,4H).

[0449] Next, the PSiYGA2 obtained in this example was analyzed by liquid chromatography mass spectrometry (abbreviation: LC / MS analysis).

[0450] In the LC / MS analysis, LC (liquid chromatography) separation was performed using an Ultimate 3000 manufactured by Thermo Fisher Scientific, and MS analysis (mass spectrometry) was performed using a Q Exactive manufactured by Thermo Fisher Scientific.

[0451] For LC separation, an arbitrary column was used, the column temperature was set to 40°C, and the solvent (acetonitrile aqueous solution) was appropriately selected as the liquid delivery condition. The sample was prepared by dissolving PSiYGA2 of an arbitrary concentration in an organic solvent, and the injection volume was 5.0 μL.

[0452] MS / MS measurements of m / z 1000.40, which is the exact mass of PSiYGA2, were performed using the parallel reaction monitoring (PRM) method. The PRM settings were set to a target ion mass range of m / z 1000.40 ± 2.0 (isolation window = 4), and detection was performed in positive mode. The energy NCE (Normalized Collision Energy) for accelerating the target ion in the collision cell was set to 40. The MS spectrum obtained from the MS / MS measurements is shown in Figure 17.

[0453] The results in Figure 17 show that for PSiYGA2, product ions were detected mainly around m / z = 243, 334, 410, 486, 514, 609, 758, 776, 835, 924, and 941.

[0454] m / z=243 is the product ion C derived from the carbazolylphenyl group. 18 H 13 N ·+ m / z=334 corresponds to the product ion C derived from the carbazolyldiphenylamino group. 24 H 18 N2 ·+ m / z=410 corresponds to the product ion C derived from the carbazolyltriphenylamino group. 30 H 22 N2 ·+ m / z=486 corresponds to the product ion C derived from the carbazolyltriphenylamino group with a phenyl group added. 36 H 26 N2 ·+ m / z=514 corresponds to the product ion C 36 H 26 N2Si ···+ m / z=609 corresponds to product ion C, which is formed by the elimination of the carbazolyltriphenylamino group from PSiYGA2 and the addition of water. 42 H 33 N2OSi + m / z=758 corresponds to the product ion C 54 H 40 N3Si ··+ m / z=776 corresponds to product ion C, which is formed by removing the carbazolyl group and the phenyl group from PSiYGA2 and adding water. 54 H 42 N3OSi + m / z=835 corresponds to the product ion C 60 H 45 N3Si ·+m / z=924 corresponds to the product ion C 66 H 48 N4Si ·+ m / z=941 corresponds to product ion C, which is formed by removing the phenyl group from PSiYGA2 and adding water. 66 H 49 N4OSi + is equivalent to.

[0455] The above results suggest that PSiYGA2 contains a carbazole skeleton and a benzene skeleton. It is possible that ±1 product ions may be detected as proton addition and removal products.

[0456] As described above, when Q in general formula (G1) is silicon, one of the characteristics is that the m / z corresponding to the product ion forming a silanol group (SiOH) is detected by adding water to the ion resulting from the elimination of the first partial structure or the second partial structure (aryl group) bonded to silicon. EXAMPLES

[0457] (Synthesis Example 2) In this example, 4,4'-(propane-2,2-diyl)bis{N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylaniline} (abbreviation: YGABmP) (structural formula (114)) was synthesized and the results of various measurements are shown.

[0458] [ka]

[0459] (Method of synthesis of YGABmP) 2.2g (5.0mmol) of 4,4'-(propane-2,2-diyl)bis(iodobenzene), 3.5g (11mmol) of N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylaniline, 4.0g (40mmol) of sodium tert-butoxide (abbreviation: tBuONa) and 0.2mg (0.4mmol) of bis(dibenzylideneacetone)palladium(0) (abbreviation: Pd(dba)2) were added to a 100mL three-neck flask, and the atmosphere in the flask was replaced with nitrogen. 20mL of dehydrated xylene was added to this mixture. After degassing this mixture with stirring under reduced pressure, 0.8mL (0.4mmol) of tri(tert-butyl)phosphine (abbreviation: (tBu)3P) (10wt% hexane solution) was added. This mixture was heated and stirred at 120°C for 6 hours under a nitrogen stream to react. After the reaction, 150 mL of toluene was added to the reaction mixture, and the suspension was filtered through Florisil and Celite. The filtrate was concentrated and purified by silica gel column chromatography (developing solvent: mixed solution of toluene and hexane), and then recrystallized to obtain 2.1 g of the target white powder in 70% yield. The reaction scheme is shown in (b-1) below.

[0460] [ka]

[0461] The Rf values ​​of silica gel thin layer chromatography (TLC) (eluent: ethyl acetate:hexane = 1:10) were 0.24 for the target compound, 0.73 for 4,4'-(propane-2,2-diyl)bis(iodobenzene), and 0.20 for N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylaniline.

[0462] The obtained organic compound 1 The H NMR spectrum is shown in FIG. 1 The results of H NMR are shown below, and it was confirmed that the target product, YGABmP, was obtained.

[0463] 1H NMR (CDCl3,300MHz): δ(ppm)=2.81(s,6H),7.04-7.44(m,38H),8.13(d,J=7.8Hz,4H).

[0464] Next, the YGABmP obtained in this example was analyzed by LC / MS analysis.

[0465] As in Example 1, MS / MS measurement of m / z 860.39, which is the exact mass of YGABmP, was performed by the PRM method. The PRM settings were set to a target ion mass range of m / z 860.39±2.0 (isolation window=4), and detection was performed in positive mode. The energy NCE (Normalized Collision Energy) for accelerating the target ion in the collision cell was set to 30 for measurement. The MS spectrum obtained from the MS / MS measurement is shown in FIG.

[0466] From the results in FIG. 19, it was found that for YGABmP, product ions were detected mainly at m / z=451, 618, 680, 695, and 845.

[0467] m / z=451 is the product ion C produced by the elimination of the carbazolyldiphenylamino group and the phenyl group from YGABmP. 33 H 27 N2 ··+ m / z=618 corresponds to the product ion C 45 H 36 N3 ··+ m / z=680 corresponds to the product ion C 50 H 38 N3 ··+ m / z=695 corresponds to the product ion C 51 H 41 N3 ·+ m / z=845 corresponds to the product ion C 62H 45 N4 + is equivalent to.

[0468] The above results suggest that YGABmP contains a carbazole skeleton and a benzene skeleton. It is possible that ±1 of the product ions may be detected as proton additions and eliminations. As described above, when Q in general formula (G1) is carbon, one of the characteristics is that the m / z corresponding to the product ion from which the first partial structure or the second partial structure (aryl group) bonded to the carbon is eliminated is detected.

[0469] Next, PSiYGA2, whose synthesis method was shown in Example 1, YGABmP, whose synthesis method was shown in this example, and a comparative compound were g The results of measuring the emission spectrum are shown. As comparative compounds, N-(4-biphenyl)-4-(carbazol-9-yl)phenylaniline (abbreviation: YGA1BP) and N,N'-bis[4-(carbazol-9-yl)phenyl]-N,N'-diphenylbiphenyl-4,4'-diamine (abbreviation: YGABP), which have a unit in common with PSiYGA2 and YGABmP but do not have a sigma bond, were used. The chemical formula representing Unit A, which is a unit that PSiYGA2, YGABmP, YGA1BP, and YGABP have in common with these compounds, is shown below.

[0470] [ka]

[0471] The emission spectrum of each compound in toluene solution was measured using a fluorometer (FS920, manufactured by Hamamatsu Photonics). Figure 20 shows the emission spectra of PSiYGA2, YGABmP, YGA1BP, and YGABP in toluene solution. A tangent was drawn at the value where the slope of the short wavelength side of the peak in each emission spectrum was maximum, and the energy of the wavelength (emission edge) at the intersection of the tangent with the horizontal axis (wavelength) or the baseline was taken as the S1 level.

[0472] In addition, the T g The measurements were performed using a differential scanning calorimeter (DSC, PerkinElmer, Pyris 1 DSC or DSC8500). For PSiYGA2, the sample powder was first heated to 370°C (above the melting point) and then cooled to -5°C at 50°C / min or more. The T was then measured from the DSC chart obtained by heating the powder to 370°C at 40°C / min. g The T of other compounds was also read. g was also measured in the same way.

[0473] For each compound, the peak wavelength read from the emission spectrum, the emission edge on the short wavelength side, the S1 level calculated from the emission edge, and the T g The measurement results are summarized in the table below.

[0474] [Table 1]

[0475] From FIG. 20 and the above table, it was found that PSiYGA2 and YGABmP have shorter peak wavelengths and shorter wavelength emission edge wavelengths than YGA1BP.

[0476] In addition, the above table shows that PSiYGA2 and YGABmP have higher S1 levels than YGA1BP and YGABP. This is because PSiYGA2 and YGABmP have structures in which two Unit A are bonded via a sigma bond, whereas YGA1BP has a structure in which a phenyl group is directly bonded to Unit A, and YGABP has a structure in which two Unit A are directly bonded.

[0477] In addition, from the above table, the T gIt was found that it was as high as 140 °C or higher, equivalent to YGABP, and significantly higher than YGA1BP. This can be said to be because PSiYGA2 and YGABmP, like YGABP, have two Unit A, so the molecular weight is sufficiently high.

[0478] From the above results, PSiYGA2 and YGABmP of one aspect of the present invention have a high S1 level and a high T g It was found that they are materials having.

Example

[0479] (Synthesis Example 3) In this example, diphenyl-bis{4-[3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}silane (abbreviation: PCCz2PSi) (structural formula (101)), which is an organic compound of one aspect of the present invention, was synthesized, and the results of various measurements are shown. The structure of PCCz2PSi is shown below.

[0480]

Chemical formula

[0481] <Synthesis of PCCz2PSi> 0.44g (0.89mmol) of bis(4-bromophenyl)-diphenylsilane, 0.73g (1.8mmol) of 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole, and 0.74g (5.4mmol) of potassium carbonate (abbreviation: K2CO3) were added to a 50mL three-neck flask. 9.0mL of dehydrated xylene was added to this mixture, and the mixture was degassed by stirring under reduced pressure. 4.0mg (18μmol) of palladium(II) acetate (abbreviation: Pd(OAc)2) and 18mg (89μmol) of tri-t-butylphosphine (abbreviation: P(tBu)3) were added to this mixture, and the mixture was stirred at 140°C for 10 hours under a nitrogen stream. After stirring, the mixture was allowed to cool to room temperature. The mixture was extracted with toluene. The extracted solution was then concentrated to obtain an oily product. This oily substance was purified by silica gel column chromatography (developing solvent: hexane, then toluene:hexane = 1:2). The obtained fraction was concentrated to obtain an oily substance. This oily substance was purified by high performance liquid column chromatography (developing solvent: chloroform). The obtained fraction was concentrated to obtain an oily substance. Hexane was added to this oily substance and it was irradiated with ultrasound. The precipitated solid was collected by suction filtration to obtain the target white solid (0.66 g, yield 65%). The synthesis scheme of PCCz2PSi is shown in the following formula (b-1).

[0482] [ka]

[0483] The obtained white solid (0.66 g) was purified by train sublimation. The purification was carried out for 17 hours under the conditions of argon flow rate 5 mL / min, pressure 3.2 Pa, and heating temperature 455°C. As a result, the target white solid (0.38 g, recovery rate 58%) was obtained.

[0484] Sublimation purification of organic compounds 1 The H NMR spectrum is shown in FIG. 1 The measurement results by 1 H NMR are shown below. From these results, it was confirmed that PCCz2PSi was obtained.

[0485] 1 H NMR (CDCl3, 300MHz): δ=8.46(s,4H),8.24(d,J=6.3Hz,4H),7.94(d,J=7.8Hz,4H),7.81-7.72(m,12H),7.66-7.40(m,28H),7.36-7.29(m,4H).

[0486] Next, the synthesis method of PCCz2PSi and the comparative compounds shown in this example were g The results of measuring the emission spectrum are shown below. As a comparative compound, 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP), which has a unit in common with PCCz2PSi but does not have a sigma bond, was prepared. The chemical formulas representing PCCz2PSi, PCCP, and Unit B, a unit that these compounds have in common, are shown below.

[0487] [ka]

[0488] The emission spectrum of each compound in a toluene solution was measured using a fluorometer (FS920, manufactured by Hamamatsu Photonics). The emission spectrum is shown in FIG. 22. The S1 level of each compound was calculated in the same manner as in Example 2. The T g The measurements were performed in the same manner as in Example 2. The peak wavelength read from the emission spectrum, the emission edge on the short wavelength side, the S1 level calculated from the emission edge, and the T g The measurement results are summarized in the table below.

[0489] [Table 2]

[0490] From FIG. 22 and the above table, it was found that the emission spectra of PCCz2PSi and PCCP overlap, and the peak wavelength, the emission edge on the short wavelength side, and the S1 level are equivalent.

[0491] Also, from the above table, the T g The temperature was higher than 190°C, which was significantly higher than that of PCCP. This is because the molecular weight was sufficiently high due to the structure in which two Unit B are bonded via a sigma bond.

[0492] From the above results, it can be seen that PCCz2PSi according to one embodiment of the present invention has a high S1 level and a high T g It was found that the material has EXAMPLES

[0493] (Synthesis Example 4) In this example, 9,9″-[3,3′-(diphenylsilyl)diphenyl]bis(3,9′-bi-9H-carbazole) (abbreviation: mCzCz2PSi) (structural formula (102)), which is an organic compound of one embodiment of the present invention, was synthesized and various measurements were performed. The structure of mCzCz2PSi is shown below.

[0494] [ka]

[0495] In a 200 mL three-neck flask, 1.5 g (3.0 mmol) of bis(3-bromophenyl)diphenylsilane, 2.4 g (7.2 mmol) of 9H-3,9'-bicarbazole, 1.7 g (18 mmol) of sodium tert-butoxide, and 0.15 g (0.36 mmol) of 2-dicyclohexylphosphino-2',6'-dimethoxybiphenyl (abbreviation: SPhos) were placed. 20 mL of xylene was added to this mixture, and the mixture was degassed by stirring under reduced pressure. 0.17 g (0.18 mmol) of tris(dibenzylideneacetone)dipalladium(0) was added to this mixture, and the mixture was heated and stirred at 140°C for 7 hours under a nitrogen stream. After stirring, toluene was added to the mixture, and the mixture was suction-filtered through Florisil, Celite, and alumina to obtain a filtrate. The obtained filtrate was concentrated to obtain a solid. This solid was purified by silica gel column chromatography (developing solvent: hexane:ethyl acetate=9:1) and the resulting solid was reprecipitated with ethyl acetate / ethanol to obtain 2.6 g of a white solid in a yield of 86%.

[0496] [ka]

[0497] The obtained solid (2.5 g) was purified by train sublimation. The purification was performed by heating at 380°C under conditions of a pressure of 3.8 Pa and an argon flow rate of 15 mL / min. After the purification by sublimation, 2.2 g of a white solid was obtained with a recovery rate of 89%.

[0498] Sublimation purification of organic compounds 1 The H NMR spectrum is shown in FIG. 1 The measurement results by 1 H NMR are shown below. From these results, it was confirmed that mCzCz2PSi was obtained.

[0499] 1H NMR(DMSO-d6,300MHz):δ=7.19-7.41(m,18H),7.55(dd,J1=8.4Hz,J2=1.8Hz,2H),7. 51-7.58(m,8H),7.70-7.95(m,12H),8.26(d,J1=7.5Hz,6H),8.48(d,J1=2.4Hz,2H).

[0500] Next, the mCzCz2PSi obtained in this example was analyzed by LC / MS analysis.

[0501] As in Example 1, MS / MS measurement of m / z 996.36, which is the exact mass of mCzCz2PSi, was performed by the PRM method. The PRM settings were set to a target ion mass range of m / z 996.36±2.0 (isolation window=4), and detection was performed in positive mode. The energy NCE (Normalized Collision Energy) for accelerating the target ion in the collision cell was set to 50 for measurement. The MS spectrum obtained from the MS / MS measurement is shown in FIG.

[0502] From the results in FIG. 24, it was found that for mCzCz2PSi, product ions were detected mainly at m / z=364, 529, 607, 772, 831, 859, and 937.

[0503] At m / z=364, the product ion C is formed by the elimination of the carbazolyl group, the phenyl-bicarbazolyl group, and the phenyl group from mCzCz2PSi and the addition of water. 22 H 16 N4OSi ··+ m / z=529 corresponds to the product ion C, which is formed by the elimination of the phenyl-bicarbazolyl group and the phenyl group from mCzCz2PSi and the addition of water. 36 H 25 N2OSi ··+ m / z=607 corresponds to product ion C, which is formed by the elimination of the phenyl-bicarbazolyl group from mCzCz2PSi and the addition of water. 42 H 31 N2OSi ··+m / z=772 corresponds to product ion C, which is formed by removing the carbazolyl group and the phenyl group from mCzCz2PSi and adding water. 42 H 31 N2OSi + m / z=831 corresponds to the product ion C, which is formed by removing the carbazolyl group from mCzCz2PSi and adding hydrogen. 60 H 41 N3Si ·+ m / z=859 corresponds to product ion C, which is formed by the elimination of two phenyl groups from mCzCz2PSi and the addition of water. 60 H 39 N4OSi + m / z=937 corresponds to product ion C, which is formed by removing the phenyl group from mCzCz2PSi and adding water. 66 H 45 N4OSi + is equivalent to.

[0504] The above results suggest that mCzCz2PSi contains a carbazole skeleton and a benzene skeleton. It is possible that ±1 product ions may be detected as proton addition and removal products.

[0505] As described above, when Q in general formula (G1) is silicon, one of the characteristics is that the m / z corresponding to the product ion forming a silanol group (SiOH) is detected by adding water to the ion resulting from the elimination of the first partial structure or the second partial structure (aryl group) bonded to silicon.

[0506] Next, the absorption spectrum and emission spectrum of a toluene solution of mCzCz2PSi were measured, and the results are shown in Figure 25. The absorption spectrum of the toluene solution was measured using an ultraviolet-visible spectrophotometer (V-770DS, manufactured by JASCO Corp.), and the spectrum measured by putting only toluene into a quartz cell was subtracted from the spectrum. The absorption spectrum and emission spectrum of the thin film are shown in Figure 26. The solid thin film was prepared by vacuum deposition on a quartz substrate. The absorption spectrum of the thin film was measured using a spectrophotometer (Spectrophotometer U4100, manufactured by Hitachi High-Technologies Corp.). The emission spectrum was measured using a fluorometer (FP-8600, manufactured by JASCO Corp.).

[0507] As shown in Figure 25, the toluene solution of mCzCz2PSi exhibited absorption peaks at 342 nm, 330 nm, 305 nm, and 294 nm, and emission wavelength peaks were 372 nm and 387 nm (excitation wavelength 330 nm). Also, as shown in Figure 26, the thin film of mCzCz2PSi exhibited absorption peaks at 343 nm and 294 nm, and emission wavelength peaks were 382 nm and 392 nm (excitation wavelength 300 nm).

[0508] The synthesis method of mCzCz2PSi shown in this example and 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviation: PSiCzCz) having a common unit with mCzCz2PSi were investigated. g The chemical formulas of mCzCz2PSi and PSiCzCz, as well as the chemical formula of Unit C, which is a unit that these compounds have in common, are shown below.

[0509] [ka]

[0510] The emission spectrum of each compound in a toluene solution was measured using a fluorometer (FP-8600, manufactured by JASCO Corporation), and the results are summarized in Figure 27. A tangent was drawn at the value where the slope on the short wavelength side of the peak in each emission spectrum was maximum, and the energy of the wavelength (emission edge) at the intersection point of the tangent and the horizontal axis (wavelength) or the baseline was defined as the S1 level.

[0511] Furthermore, the emission spectrum of the thin film of each compound at 10K was measured. Specifically, the phosphorescence spectrum was measured by detecting the emission 0.02 seconds after irradiation with excitation light (325 nm). Figure 28 shows the emission spectrum (phosphorescence spectrum). A tangent was drawn at the value where the slope of the peak on the short wavelength side in each emission spectrum (phosphorescence spectrum) was maximum, and the energy of the wavelength (emission edge) at the intersection point of the tangent and the horizontal axis (wavelength) or the baseline was defined as the T1 level.

[0512] In addition, the T g The measurements were performed in the same manner as in Example 2. For each compound, the peak wavelength, the emission edge on the short wavelength side, and the S1 level calculated from the emission edge, which were read from the emission spectrum in FIG. 27, and the T1 level, which is the rising (onset) energy on the short wavelength side of the emission spectrum, and the T g The measurement results are summarized in the table below.

[0513] [Table 3]

[0514] From FIG. 27 and the above table, it was found that the fluorescence emission spectra of mCzCz2PSi and PSiCzCz overlap, and the peak wavelength, the emission edge on the short wavelength side, and the S1 level are equivalent.

[0515] Also, from the above table, T of mCzCz2PSi gwas found to be higher than 160 °C, which was significantly higher than that of PSiCzCz. This is because the structure in which two Unit C are bonded via a sigma bond has a sufficiently high molecular weight compared to PSiCzCz, which has only one Unit C.

[0516] Furthermore, from Figure 28 and the above table, it was found that the onset energy on the short wavelength side of the emission spectra (phosphorescence spectra) of mCzCz2PSi and PSiCzCz was 3.0 eV. The emission spectra also almost overlapped. From this, it can be said that the T1 levels of mCzCz2PSi and PSiCzCz are equivalent. The spectrum seen around 370 nm to 420 nm is due to fluorescence.

[0517] From the above results, it is clear that mCzCz2PSi according to one embodiment of the present invention has high S1 and T1 levels and high T g In addition, the results of Examples 2 to 4 show that the organic compound of one embodiment of the present invention has high S1 and T1 levels and a high T g It was found that the material has

[0518] The organic compound according to one embodiment of the present invention is T g Since the temperature is as high as 100° C. or higher, a light-emitting device having the organic compound can exhibit good characteristics even when the device is stored or operated at high temperatures. In addition, even if a layer containing the organic compound is treated at high temperatures during the processing step for fabricating a light-emitting device, good film quality can be maintained, so a light-emitting device exhibiting good characteristics can be fabricated. EXAMPLES

[0519] In this example, light-emitting device 1, which is a blue fluorescent light-emitting device made using PSiYGA2, an organic compound according to one embodiment of the present invention, and comparative light-emitting device 2 were fabricated, and the results of various measurements performed will be described. The structural formulae of the organic compounds used in light-emitting device 1 and comparative light-emitting device 2 are shown below. The device structures of light-emitting device 1 and comparative light-emitting device 2 are also shown in the table below.

[0520] [ka]

[0521] [Table 4]

[0522] <<Creating light-emitting device 1>> The light-emitting device 1 shown in this example has a structure in which a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer (a first electron transport layer and a second electron transport layer) and an electron injection layer are sequentially laminated on a first electrode formed on a substrate, and a second electrode is laminated on the electron injection layer.

[0523] First, a first electrode was formed on the substrate. The electrode area was 4 mm 2 The dimensions of the substrate were (2 mm x 2 mm). A glass substrate was used as the substrate. The first electrode was formed by depositing indium tin oxide containing silicon oxide (ITSO) to a thickness of 110 nm by a sputtering method. In this embodiment, the first electrode functions as an anode.

[0524] As a pretreatment, the surface of the substrate was washed with water, baked at 200°C for 1 hour, and then subjected to UV ozone treatment for 370 seconds. -4 The substrate was introduced into a vacuum deposition apparatus whose inside had been reduced in pressure to about Pa, and vacuum baking was carried out at 170° C. for 30 minutes in a heating chamber in the vacuum deposition apparatus, and then the substrate was allowed to cool for about 30 minutes.

[0525] Next, a hole injection layer was formed on the first electrode by co-evaporating 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB) and molybdenum oxide (MoO3) to a thickness of 50 nm at a weight ratio of 4:1 (=NPB:MoO3).

[0526] Next, a hole transport layer was formed on the hole injection layer by vapor deposition of PSiYGA2 to a thickness of 10 nm.

[0527] Next, an emitting layer was formed on the hole transport layer by co-evaporating 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA) and N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenyl-4,4'-stilbenediamine (abbreviation: YGA2S) in a weight ratio of 1:0.05 (=CzPA:YGA2S) to a thickness of 30 nm.

[0528] Next, an electron transport layer was formed on the light-emitting layer. As the first electron transport layer, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq3) was formed to a thickness of 10 nm, and then as the second electron transport layer, bathophenanthroline (abbreviation: Bphen) was formed to a thickness of 20 nm.

[0529] Next, an electron injection layer was formed on the electron transport layer by vapor deposition of lithium fluoride (LiF) to a thickness of 1 nm.

[0530] Next, a second electrode was formed on the electron injection layer. The second electrode was formed by evaporating aluminum (Al) to a thickness of 200 nm. In this example, the second electrode functions as a cathode.

[0531] By the above steps, the light-emitting device 1 was produced. Next, a method for producing the comparative light-emitting device 2 will be described.

[0532] <Preparation of comparative light-emitting device 2> Comparative light-emitting device 2 was prepared in the same manner as light-emitting device 1, except that PSiYGA2 used in the hole transport layer in light-emitting device 1 was replaced with YGABP.

[0533] The above-mentioned light-emitting device 1 and comparative light-emitting device 2 were sealed with a glass substrate in a glove box with a nitrogen atmosphere to prevent exposure to the atmosphere (a sealant was applied around the device, and UV treatment was performed during sealing, and heat treatment was performed at 80°C for 1 hour), and then the initial characteristics of each light-emitting device were measured.

[0534] The luminance vs. current density characteristics of light-emitting device 1 and comparative light-emitting device 2 are shown in FIG. 29, the current efficiency vs. luminance characteristics in FIG. 30, the power efficiency vs. luminance characteristics in FIG. 31, and the external quantum efficiency vs. luminance characteristics in FIG. 32. 2 The electroluminescence spectrum measured at a current density of 1000 nm is shown in FIG.

[0535] Furthermore, the luminance of the light-emitting device 1 and the comparative light-emitting device 2 was 100 cd / m 2 The main characteristics around the luminance are shown in the table below. The luminance and CIE chromaticity were measured using a color luminance meter (Topcon Corporation, BM-5A), and the electroluminescence spectrum was measured using a multichannel spectrometer (Hamamatsu Photonics KK, PMA-11), both at room temperature. The external quantum efficiency shown in this example was calculated from the measurement at the front, assuming a perfect diffusion surface (also called Lambertian).

[0536] [Table 5]

[0537] 29 to 33 and the above table, it is clear that the light-emitting device 1 exhibits blue light emission originating from YGA2S and has good light-emitting properties. It is also clear that the light-emitting device 1 has higher current efficiency and external quantum efficiency than the comparative light-emitting device 2. It is also clear that the light-emitting device 1 is higher than the comparative light-emitting device 2 in terms of maximum current efficiency and external quantum efficiency.

[0538] As shown in Example 2, this is because PSiYGA2 used in the hole transport layer of light-emitting device 1 has a higher S1 level than YGABP used in the hole transport layer of comparative light-emitting device 2. Since light-emitting device 1 uses PSiYGA2, which has a high S1 level, in the hole transport layer, it can be said that the light-emitting efficiency is higher than that of comparative light-emitting device 2, which uses YGABP, which has a low S1 level, in the hole transport layer.

[0539] That is, it was found that a light-emitting device with high emission efficiency can be provided by using the organic compound of one embodiment of the present invention for a hole-transport layer that is adjacent to a light-emitting layer. EXAMPLES

[0540] In this example, a blue fluorescent light-emitting device 3 and a comparative light-emitting device 4 were fabricated using YGABmP, which is an organic compound of one embodiment of the present invention, and various measurements were performed on the light-emitting device 3 and the comparative light-emitting device 4. The structural formulae of the organic compounds used in the light-emitting device 3 and the comparative light-emitting device 4 are shown below. The device structures of the light-emitting device 3 and the comparative light-emitting device 4 are shown in the following table.

[0541] [ka]

[0542] [Table 6]

[0543] <<Creating light-emitting device 3>> The light-emitting device 3 differs from the light-emitting device 1 in that PSiYGA2 used in the hole transport layer in the light-emitting device 1 shown in the above-mentioned embodiment is replaced with YGABmP. The light-emitting device 3 also differs from the light-emitting device 1 in that the materials used in the electron transport layer and the electron injection layer are different. Specifically, in the light-emitting device 3, the hole transport layer was formed by evaporating YGABmP to a thickness of 10 nm, and after the light-emitting layer was formed, Alq3 was used to form an electron transport layer by evaporating it to a thickness of 10 nm, and then Alq3 and lithium (Li) were co-evaporated to a weight ratio of 1:0.01 (=Alq3:Li) to form an electron injection layer to a thickness of 20 nm. The rest of the light-emitting device 3 was fabricated in the same manner as the light-emitting device 1.

[0544] <Preparation of comparative light-emitting device 4> Comparative light-emitting device 4 differs from light-emitting device 3 in that YGABmP used in the hole transport layer in light-emitting device 3 was replaced with YGABP.

[0545] The above-mentioned light-emitting device 3 and comparative light-emitting device 4 were sealed with a glass substrate in a glove box with a nitrogen atmosphere to prevent exposure to the atmosphere (a sealant was applied around the elements, and UV treatment was performed during sealing, followed by heat treatment at 80°C for 1 hour), and then the initial characteristics of each light-emitting device were measured.

[0546] The luminance vs. current density characteristics of the light-emitting device 3 and the comparative light-emitting device 4 are shown in FIG. 34, the current efficiency vs. luminance characteristics are shown in FIG. 2 The electroluminescence spectrum measured at a current density of 1000 nm is shown in FIG.

[0547] Furthermore, the luminance of the light-emitting device 3 and the comparative light-emitting device 4 was 1000 cd / m 2 The main characteristics around this range are shown in the table below. The luminance and CIE chromaticity were measured using a color luminance meter (Topcon Corporation, BM-5A), and the electroluminescence spectrum was measured using a multichannel spectrometer (Hamamatsu Photonics KK, PMA-11), both at room temperature.

[0548] [Table 7]

[0549] 34 to 36 and the above table, it is clear that the light-emitting device 3 exhibits blue light emission derived from YGA2S and has good light-emitting characteristics. It is also clear that the light-emitting device 3 has a higher curre...

Claims

1. An organic compound represented by the following general formula (G1): 【Chemistry 1】 In the general formula (G1), Q represents carbon or silicon, and R １ and R ２ each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; n represents an integer of 1 to 3; １ ~ α ４ each independently represents a substituted or unsubstituted phenylene group or a substituted or unsubstituted biphenylene group; R １５、 R ２５ , R ３１ , R ４５ , R ５５ and R ６１ At least one of represents a single bond, and the others each independently represent hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; R １１ ~R １４ , R ２１ ~R ２４ , R ３２ ~R ３５ , R ４１ ~R ４４ , R ５１ ~R ５４ , and R ６２ ~R ６５ each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. １５ When is a single bond, R １５ is α ２ and form a ring. ４５ When is a single bond, R ４５ is α ４ and form a ring. ２５ and R ３１ When both are single bonds, R ２５ and R ３１ are bonded to each other to form a ring. ５５ and R ６１ When both are single bonds, R ５５ and R ６１ are bonded to each other to form a ring. ２５ and R ３１ is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, ２ is a substituted or unsubstituted biphenylene group, R ２５ and R ３１ One of them is α ２ and form a ring. ５５ and R ６１ is a single bond and the other is hydrogen, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, ４ is a substituted or unsubstituted biphenylene group, R ５５ and R ６１ One of them is α ４ to form a ring)

2. In claim 1, α １ and α ３ each independently represents a substituted or unsubstituted m-phenylene group.

3. An organic compound represented by any one of the following general formulas (G2-1), (G1-2-2) and (G2-3). 【Chemistry 2】 In the general formulas (G2-1), (G1-2-2) and (G2-3), Q represents carbon or silicon; R １ and R ２ each independently represents an alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 6 to 8 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms; n represents an integer of 1 to 3; １ ~ α ４ each independently represents a substituted or unsubstituted phenyl group or a substituted or unsubstituted biphenyl group; R １１ ~R １５ , R ２１ ~R ２５ , R ３１ ~R ３５ , R ４１ ~R ４５ , R ５１ ~R ５５ , R ６１ ~R ６５ , R ７１ ~R ７４ , R ８１ ~R ８４ , R ９１ ~R ９６ and R １０１ ~R １０６ each independently represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.

4. In any one of claims 1 to 3, An organic compound having a glass transition temperature of 100° C. or higher.

5. An organic compound represented by any one of the following structural formulas (100), (101), (102) and (114). 【Chemistry 3】

6. A first electrode, a second electrode, and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, A light-emitting device, wherein the organic compound layer comprises an organic compound according to any one of claims 1 to 3 and 5.

7. A first electrode, a second electrode, and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer is composed of a plurality of layers containing an organic compound, and includes one or more light-emitting layers; A light-emitting device, wherein any one of the layers including the organic compound from the layer in contact with the first electrode to at least the light-emitting layer contains the organic compound according to any one of claims 1 to 3 and claim 5.

8. A first electrode, a second electrode, and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer is composed of a plurality of layers containing an organic compound, and includes one or more light-emitting layers; The light-emitting layer comprises the organic compound according to any one of claims 1 to 3 and 5 and a second organic compound, The second organic compound has a π-electron deficient heteroaromatic ring.

9. A light emitting apparatus comprising the light emitting device according to claim 6 and a transistor or a substrate.

10. 10. An electronic device comprising: the light emitting device according to claim 9; and a detection unit, an input unit, or a communication unit.

11. A lighting device comprising the light-emitting device according to claim 9 and a housing.

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