Electro-optical device and electronic apparatus

Abstract

To suppress peripheral light emission.SOLUTION: An electro-optical device 10 includes: reflective electrodes 62R, 62G having light reflectivity and being adjacent to each other along an X direction in plan view; pixel electrodes 131R, 131G being formed of TiN and being adjacent to each other along the X direction; an optical adjustment layer 70; a pixel separation layer 134 opening in an opening portion Ap_R with respect to the pixel electrode 131R and opening in an opening portion Ap_G with respect to the pixel electrode 131G; a common electrode 133; and an organic layer 132 being provided between the common electrode 133 and the pixel electrodes 131R, 131G. In plan view, an end P1 of the opening portion Ap_R, an end P2 of the reflective electrode 62R, and an end P3 of the pixel electrode 131R are positioned in this order along the X direction, and an end P4 of the opening portion Ap_G, an end P5 of the reflective electrode 62G, and an end P6 of the pixel electrode 131G are positioned in the this order along a direction opposite to the X direction.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to an electro-optical device and an electronic device. [Background technology]

[0002] In electro-optical devices using, for example, OLEDs as light-emitting elements, a technology is known in which white light-emitting elements are used to achieve color display, and light of specific wavelengths is intensified and extracted by an optical resonance structure in pixel sections corresponding to red, green, and blue (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-100348 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, the technique described in Patent Document 1 has a problem in that the phenomenon in which light is emitted around the area where the pixel electrode opens in the insulating layer and contacts the light-emitting layer, that is, peripheral light emission, can be visible. [Means for solving the problem]

[0005] An electro-optical device according to one aspect of the present disclosure includes a first reflective layer and a second reflective layer having light reflectivity and adjacent to each other along a first direction in a planar view, a first pixel electrode and a second pixel electrode made of a metal nitride and adjacent to each other along the first direction in a planar view, a first optical adjustment layer having insulating properties and light transmissivity and provided between the first reflective layer and the first pixel electrode, a second optical adjustment layer having insulating properties and light transmissivity and provided between the second reflective layer and the second pixel electrode, an insulating layer opening at a first opening relative to the first pixel electrode in a planar view and opening at a second opening relative to the second pixel electrode in a planar view, a common electrode, and an organic layer including a light-emitting layer provided between the common electrode, the insulating layer, and the first pixel electrode or the second pixel electrode, an end of the first reflective layer adjacent to the second opening is a first end, an end of the first pixel electrode adjacent to the second pixel electrode is a third end, an end of the second opening adjacent to the first opening is a fourth end, an end of the second reflective layer adjacent to the first reflective layer is a fifth end, and an end of the second pixel electrode adjacent to the first pixel electrode is a sixth end, the first end, the second end, and the third end are located in this order from the first opening to the second opening along the first direction, and the fourth end, the fifth end, and the sixth end are located in this order from the second opening to the first opening along the first direction. [Brief description of the drawings]

[0006] [Figure 1] 1 is a diagram illustrating a configuration of an electro-optical device according to an embodiment. [Diagram 2] FIG. 2 is a block diagram showing an electrical configuration of the electro-optical device. [Diagram 3] 1 is a circuit diagram illustrating a pixel portion in an electro-optical device. [Figure 4] 4 is a timing chart showing the operation of the electro-optical device. [Diagram 5]FIG. 2 is a plan view showing a pixel portion in the electro-optical device. [Figure 6] 3 is a cross-sectional view showing a main part of a reflective layer and a pixel electrode in the electro-optical device. [Figure 7] 3 is a cross-sectional view showing a main part of a reflective layer and a pixel electrode in the electro-optical device. [Figure 8] 3 is a cross-sectional view showing a main part of a reflective layer and a pixel electrode in the electro-optical device. [Figure 9] FIG. 4 is a cross-sectional view showing a main part of a reflective layer and a pixel electrode in a first comparative example. [Figure 10] FIG. 2 is a cross-sectional view of a main part of a pixel unit. [Figure 11] FIG. 2 is a cross-sectional view of a main part of a pixel unit. [Figure 12] 11 is a cross-sectional view of a main part of a pixel unit according to a second comparative example. FIG. [Figure 13] 13 is a cross-sectional view of a main part of a pixel unit according to a third comparative example. FIG. [Figure 14] FIG. 13 is a diagram showing a comparison between the embodiment and a third comparative example. [Figure 15] FIG. 13 is a diagram showing a comparison between the embodiment and a third comparative example. [Figure 16] FIG. 1 is a perspective view showing a head mounted display using an electro-optical device. [Figure 17] FIG. 2 is a diagram showing an optical configuration of a head mounted display. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, electro-optical devices according to embodiments of the present invention will be described with reference to the drawings. In each drawing, the dimensions and scale of each part are appropriately different from the actual ones. In addition, the embodiments described below are preferred specific examples, and therefore various technically preferable limitations are attached, but the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description to the effect that the present invention is limited.

[0008] FIG. 1 is a perspective view showing an electro-optical device 10 according to an embodiment, and FIG. 2 is a block diagram showing the electrical configuration of the electro-optical device 10. As shown in FIG. The electro-optical device 10 is a microdisplay panel that displays color images in, for example, a head mounted display. The electro-optical device 10 includes a plurality of pixel units and a drive circuit that drives the pixel units. The pixel units and the drive circuit are integrated on a semiconductor substrate. The semiconductor substrate is typically a silicon substrate, but may be another type of semiconductor substrate.

[0009] The electro-optical device 10 is housed in a frame-shaped case 192 that opens in the display region 100. One end of an FPC board 194 is connected to the electro-optical device 10. FPC is an abbreviation for Flexible Printed Circuits. The other end of the FPC board 194 is provided with a plurality of terminals 196 for connecting to a host device (not shown). When the plurality of terminals 196 are connected to the host device, video data, synchronization signals, and the like are supplied to the electro-optical device 10 from the host device via the FPC board 194.

[0010] In the figure, the X direction is the extension direction of the scanning lines in the electro-optical device 10, which corresponds to the horizontal direction in terms of the display screen, and the Y direction is the extension direction of the data lines, which corresponds to the vertical direction in terms of the display screen. The two-dimensional plane defined by the X and Y directions is the substrate surface of the semiconductor substrate. The Z direction is perpendicular to the X and Y directions and corresponds to the emission direction of light emitted from the light-emitting element. In this description, a plan view refers to a view of the semiconductor substrate from the opposite direction to the Z direction, and a cross-sectional view refers to a view of the semiconductor substrate cut in a direction perpendicular to the substrate surface.

[0011] As shown in FIG. 2, the electro-optical device 10 is roughly divided into a control circuit 30, a data signal output circuit 50, a display area 100, and a scanning line driving circuit 120. In the display region 100, m rows of scanning lines 12 are provided along the X direction, and (3n) columns of data lines 14 are provided along the Y direction so as to be electrically insulated from each other of the scanning lines 12. Here, m and n are integers of 2 or more.

[0012] In the display region 100, pixel sections 110 are provided corresponding to the intersections of m rows of scanning lines 12 and (3n) columns of data lines 14. Therefore, the pixel sections 110 are arranged in a matrix of m rows by (3n) columns. To distinguish the rows of the matrix arrangement, they may be referred to as 1, 2, 3, ..., (m-1), mth row from the top in the figure. Similarly, to distinguish the columns of the matrix, they may be referred to as 1, 2, 3, ..., (3n-2), (3n-1), (3n)th column from the left in the figure. In addition, an integer i of 1 or more and m or less is used to generalize the scanning lines 12. Similarly, an integer j of 1 or more and (3n) or less is used to generalize the data lines 14.

[0013] The control circuit 30 controls each part based on video data Vid and a synchronous signal Sync supplied from a host device (not shown). Specifically, the control circuit 30 generates various control signals for controlling each part. The video data Vid specifies the gradation level of a pixel in an image to be displayed, for example, in 8 bits. The synchronization signal Sync includes a vertical synchronization signal that instructs the start of vertical scanning of the video data Vid, a horizontal synchronization signal that instructs the start of horizontal scanning, and a dot clock signal that indicates the timing of one pixel of the video data.

[0014] In this embodiment, the pixels of an image to be displayed and the pixel units 110 in the display area 100 correspond one-to-one. The luminance characteristics at the gradation level indicated by the video data Vid supplied from the host device do not necessarily match the luminance characteristics of the OLED included in the pixel unit 110. Therefore, in order to make the OLED emit light at a luminance corresponding to the gradation level indicated by the video data Vid, the control circuit 30 up-converts the 8 bits of the video data Vid to, for example, 10 bits and outputs it as video data Vdata. Therefore, the 10-bit video data Vdata becomes data corresponding to the gradation level specified by the video data Vid. For the up-conversion, a look-up table is used that stores in advance the correspondence between 8 bits of input video data Vid and 10 bits of output video data Vdata.

[0015] The scanning line driving circuit 120 is a circuit for driving the pixel units 110 arranged in m rows (3n) columns, row by row, under the control of the control circuit 30. For example, the scanning line driving circuit 120 supplies scanning signals / Gwr(1), / Gwr(2), ..., / Gwr(m-1), / Gwr(m) to the 1st, 2nd, 3rd, ..., (m-1), and mth scanning lines 12 in that order. In general, the scanning signal supplied to the i-th scanning line 12 is represented as / Gwr(i).

[0016] The data signal output circuit 50 is a circuit that outputs a data signal via the data lines 14 to the pixel units 110 located in a row selected by the scanning line driving circuit 120 under the control of the control circuit 30. The data signal is a voltage signal obtained by converting 10-bit video data Vdata into analog. That is, the data signal output circuit 50 converts one row of video data Vdata corresponding to the pixel units 110 in columns 1 to (3n) in the selected row into analog, and outputs it to the data lines 14 in columns 1 to (3n) in this order.

[0017] In the figure, the data signals output to the data lines 14 in the 1st, 2nd, 3rd, ..., (3n-2), (3n-1), and (3n)th columns are represented as Vd(1), Vd(2), Vd(3), ..., Vd(3n-2), Vd(3n-1), and Vd(3n), respectively. In general, the potential of the data line 14 in the jth column is represented as Vd(j).

[0018] 2, in the display region 100, the pixel units 110 are electrically arranged such that the R pixel units 110, the B pixel units 110, and the G pixel units 110 are arranged along the X direction, and the pixel units 110 of the same color are arranged along the Y direction. Therefore, when focusing on any one column of data lines 14, the pixel units 110 of the same color correspond to it. Note that one color is expressed by additive color mixing of the RBG pixel units 110 adjacent in the X direction. For this reason, strictly speaking, the pixel units 110 should be called sub-pixel units, but for convenience of explanation, they are referred to as pixel units.

[0019] 3 is a diagram showing the electrical configuration of the pixel section 110 in the electro-optical device 10. The pixel sections 110 arranged in 1080 rows (3n) columns are electrically identical to one another. For this reason, the pixel sections 110 will be described by taking as a representative one the pixel section 110 corresponding to the i-th row and j-th column.

[0020] As shown in the figure, the pixel section 110 includes, from an electrical perspective, P-channel MOS type transistors 121 and 122, an OLED 130, and a capacitance element 140. In the description of the pixel unit 110, the term "electrically" is used to refer to the multiple elements that make up the pixel unit 110 and the connections between these multiple elements. This expression is used because the pixel unit 110 includes elements that do not contribute to the electrical connections from a mechanical or physical perspective.

[0021] The OLED 130 is an example of a light-emitting element, and an organic layer 132 including a light-emitting layer is sandwiched between a pixel electrode 131 and a common electrode 133. The pixel electrode 131 functions as an anode, and the common electrode 133 functions as a cathode. Details of the OLED 130 will be described later, but when a current flows from the anode to the cathode, holes injected from the anode and electrons injected from the cathode recombine in the light-emitting layer of the organic layer 132 to generate excitons, thereby generating white light. The generated white light resonates in an optical resonator composed of a reflective electrode and a common electrode 133 of a semi-reflective and semi-transmissive layer, both of which are omitted in Fig. 3, and is emitted at a resonant wavelength set corresponding to one of the colors red, green, and blue. A color filter corresponding to the color is provided on the light emission side from the optical resonator. Therefore, the light emitted from the OLED 130 is colored by the optical resonator and the color filter, and is then visually recognized by the observer.

[0022] In the transistor 121 of the pixel portion 110 in the i-th row and j-th column, the gate node g is connected to the drain node of the transistor 122, the source node is connected to the power supply line 116 of the voltage Vel, and the drain node is connected to the pixel electrode 131 which is the anode of the OLED 130. In the transistor 122 of the pixel unit 110 in the i-th row and j-th column, the gate node is connected to the i-th row scan line 12 and the source node is connected to the j-th column data line 14. The common electrode 133 functioning as the cathode of the OLED 130 is connected to the power supply line 118 of the voltage Vct. In addition, since the electro-optical device 10 is formed on a silicon substrate, the substrate potential of the transistors 121 and 122 is set to a potential equivalent to the voltage Vel, for example.

[0023] The pixel unit 110 shown in Fig. 3 is common to each of the colors red, green, and blue from an electrical standpoint, and has been generally described without specifying the color, but structurally, each color is different. Therefore, when describing the pixel units by color, they are referred to as pixel units 110R, 110G, and 110B. Similarly, when describing the OLED 130 and pixel electrode 131 by color, they are referred to as OLED 130R, 130G, and 130B, and pixel electrodes 131R, 131G, and 131B.

[0024] FIG. 4 is a timing chart illustrating the operation of the electro-optical device 10. As shown in FIG. In the electro-optical device 10, m scanning lines 12 are scanned one by one during a frame (V) period in the order of 1st, 2nd, 3rd, ..., mth rows. In detail, as shown in the figure, the scanning signals / Gwr(1), / Gwr(2), ..., / Gwr(m-1), / Gwr(m) are sequentially and exclusively set to L level by the scanning line driving circuit 120 for each horizontal scanning period (H). In this embodiment, the periods during which adjacent scanning signals / Gwr(1) to / Gwr(m) are at L level are separated in time. Specifically, after scanning signal / Gwr(i-1) changes from L level to H level, the next scanning signal / Gwr(i) becomes L level after a period. This period corresponds to the horizontal blanking period.

[0025] In this description, the period of one frame (V) refers to the period required to display one frame of an image specified by the video data Vid. If the length of the period of one frame (V) is the same as the vertical synchronization period, for example, if the frequency of the vertical synchronization signal included in the synchronization signal Sync is 60 Hz, it is 16.7 milliseconds, which corresponds to one cycle of the vertical synchronization signal. Also, the horizontal scanning period (H) is the time interval during which the scanning signals / Gwr(1) to / Gwr(m) sequentially become L level, but for convenience in the figure, the start timing of the horizontal scanning period (H) is set to approximately the center of the horizontal blanking period.

[0026] When a scanning signal among the scanning signals / Gwr(1) to / Gwr(m), for example a scanning signal / Gwr(i) supplied to the scanning line 12 in the i-th row, goes to the L level, the transistor 122 in the pixel unit 110 in the i-th row and j-th column, for example, goes to the ON state. As a result, the gate node g of the transistor 121 in the pixel unit 110 is electrically connected to the j-th column data line 14.

[0027] In this description, the "on state" of a transistor means that the source node and drain node of the transistor are electrically closed and in a low impedance state, and the "off state" of a transistor means that the source node and drain node are electrically open and in a high impedance state. In this description, "electrically connected" or simply "connected" means a state in which two or more elements are directly or indirectly connected or coupled. "Electrically not connected" or simply "not connected" means a state in which two or more elements are not directly or indirectly connected or coupled.

[0028] In a horizontal scanning period (H) when the scanning signal / Gwr(i) is at L level, the data signal output circuit 50 converts the grayscale levels of the pixels in the i-th row, 1st column to the i-th row, n-th column indicated by the video data Vdata into analog potentials Vd(1) to Vd(n) and outputs them as data signals to the 1st to nth column data lines 14. In terms of the j-th column, the data signal output circuit 50 converts the grayscale level d(i,j) of the pixel in the i-th row, j-th column to an analog signal potential Vd(j) and outputs it as a data signal to the j-th column data line 14. In addition, during the horizontal scanning period (H) when the scanning signal / Gwr(i-1) one row before the scanning signal / Gwr(i) is at the L level, the data signal output circuit 50 converts the gradation level d(i-1, j) of the pixel in the (i-1)th row and jth column into an analog signal potential Vd(j) and outputs it as a data signal to the data line 14 in the jth column.

[0029] The data signal of the potential Vd(j) is applied to the gate node g of the transistor 121 in the pixel unit 110 in the i-th row and j-th column via the j-th data line 14, and the potential Vd(j) is held by the capacitance element 140. Therefore, the transistor 121 passes a current to the OLED 130 according to the voltage between the gate node and the source node. Even when the scanning signal Gwr(i) becomes H level and the transistor 122 is turned off, the potential Vd(j) is held by the capacitance element 140, so that a current continues to flow through the OLED 130. Therefore, in the pixel unit 110 in the i-th row and j-th column, the OLED 130 continues to emit light with a brightness according to the voltage held by the capacitance element 140, i.e., the gradation level, until the period of one frame (V) has elapsed and the transistor 122 is turned on again and the voltage of the data signal is applied again.

[0030] Although the pixel unit 110 in the i-th row and j-th column has been described here, the OLEDs 130 of the pixel units 110 in the i-th row and other columns than the j-th column also emit light at the luminance indicated by the video data Vdata. Also, the OLEDs 130 of the pixel units 110 in rows other than the i-th row emit light with the luminance indicated by the video data Vdata as the scanning signals / Gwr(1) to / Gwr(m) sequentially go to the L level. Therefore, in the electro-optical device 10, in a period of one frame (V), the OLEDs 130 in all the pixel sections 110 from row 1, column 1 to row m, column n emit light at the luminance indicated by the video data Vdata, thereby displaying one frame of an image.

[0031] 5 is a plan view showing the arrangement of pixel units 110 in display region 100. The color of one dot in display region 100 is expressed by additive color mixing of light emitted from three light-emitting regions surrounded by a frame Dp in the figure. Specifically, in frame Dp, light-emitting regions R, G, and B are arranged in this order along the X direction.

[0032] Fig. 6 is a cross-sectional view showing a region including a part of pixel unit 110R and pixel unit 110B cut along the X direction, Fig. 7 is a cross-sectional view showing a region including a part of pixel unit 110G and pixel unit 110B cut along the X direction, and Fig. 8 is a cross-sectional view showing a region including two adjacent pixel units 110R cut along the Y direction.

[0033] In the pixel section 110R, a reflective electrode 62R, an optical adjustment layer 70, a pixel electrode 131R, a pixel separation layer 134, and an organic layer 132 are laminated in this order. 5 in correspondence with the pixel unit 110R, and reflects light incident from the opposite direction to the Z direction in the Z direction. The reflective electrode 62R is, for example, a conductive layer formed by laminating an aluminum and copper alloy (AlCu) film on a titanium (Ti) film.

[0034] The optical adjustment layer 70 is a laminate of transparent insulating layers such as silicon oxide (SiO2) and silicon nitride (SiN). The thickness of the optical adjustment layer 70 differs in the pixel units 110R, 110G, and 110B as described later. In the pixel unit 110R, the thickness of the optical adjustment layer 70 between the reflective electrode 62R and the pixel electrode 131R is L. R In this description, the thickness of a layer or electrode refers to the distance along the Z direction when viewed in cross section.

[0035] In this embodiment, the pixel electrode 131R is a conductive electrode formed by patterning titanium nitride (TiN) having optical transparency and optical reflectivity into a rectangular shape as shown in FIG. 5 and 8, the pixel electrode 131R is electrically connected to the reflective electrode 62R through a contact hole Ct_R. Furthermore, the reflective electrode 62R is electrically connected to the drain node of the transistor 121 through another contact hole not shown.

[0036] The pixel separation layer 134 is a light-transmitting insulating film that is laminated on the optical adjustment layer 70 and the pixel electrode 131R and is provided so as to cover the peripheral portion of the pixel electrode 131R. The pixel separation layer 134 has an opening Ap_R having a shape shown in Fig. 5 in a plan view in terms of the pixel portion 110R. The pixel separation layer 134 is made of, for example, silicon oxide.

[0037] The organic layer 132 is laminated on the pixel electrode 131R or the pixel separation layer 134. As described later, the organic layer 132 includes a hole injection layer, a light emitting layer, an electron transport layer, and the like, and is common to all of the pixel units 110R, 110G, and 110B.

[0038] In the pixel section 110G, a reflective electrode 62G, an optical adjustment layer 70, a pixel electrode 131G, a pixel separation layer 134, and an organic layer 132 are laminated in this order, similarly to the pixel section 110R. However, the thickness L of the optical adjustment layer 70 in the pixel section 110G is G is the thickness L of the optical adjustment layer 70 in the pixel section 110R. R It is thinner than that.

[0039] In the pixel section 110B, similarly to the pixel sections 110R and 110G, the reflective electrode 62B, the optical adjustment layer 70, the pixel electrode 131B, the pixel separation layer 134, and the organic layer 132 are laminated in this order. However, the thickness L of the optical adjustment layer 70 in the pixel section 110B is B is the thickness L of the optical adjustment layer 70 in the pixel section 110G. G It is thinner than that. That is, the thickness of the optical adjustment layer 70 is L R >L G >L B The thickness L of the optical adjustment layer 70 is R , L G , L B Specific numerical values ​​etc. will be described later.

[0040] Although not shown in Figures 6, 7, and 8, driving circuits and the like are formed below the reflective electrodes 62R, 62G, and 62B, and a common electrode 133, a sealing layer, a color filter, protective glass, and the like are provided above the organic layer 132.

[0041] 6, of the opening Ap_R in the pixel unit 110R, an end portion close to the pixel unit 110G adjacent thereto in the X direction is designated as P1. Also, of the reflective electrode 62R in the pixel unit 110R, an end portion close to the pixel unit 110G is designated as P2, and of the pixel electrode 131R in the pixel unit 110R, an end portion close to the pixel unit 110G is designated as P3. The ends P1, P2, and P3 are positioned in this order along the X direction in a plan view. In addition, in the opposite direction to the X direction, the end of the aperture Ap_R, the end of the reflective electrode 62R, and the end of the pixel electrode 131R are located in this order in plan view.

[0042] 8, of the opening Ap_R in the pixel unit 110R, an end portion close to the adjacent pixel unit 110R of the same color in the Y direction is designated as P7. Of the reflective electrode 62R in the pixel unit 110R, an end portion close to the pixel unit 110G is designated as P8, and of the pixel electrode 131R in the pixel unit 110R, an end portion close to the adjacent pixel unit 110R in the Y direction is designated as P9. The ends P7, P8, and P9 are positioned in this order along the Y direction in a plan view.

[0043] 5, in plan view, the opening Ap_R is included in the reflective electrode 62R. Moreover, the reflective electrode 62R is included in the pixel electrode 131R, except for the side positioned in the opposite direction to the Y direction in the figure.

[0044] In order to explain the effect of this embodiment having such a positional relationship, a first comparative example to the embodiment will be described. FIG. 9 is a cross-sectional view of a main part of an electro-optical device according to a first comparative example, showing a region including a pixel unit 110R and a part of a pixel unit 110B cut along the X direction. In the first comparative example, an end P1 of the aperture Ap_R in the pixel unit 110R, an end P2 of the reflective electrode 62R, and an end P3 of the pixel electrode 131R are positioned in the order of ends P1, P3, P2 along the X direction in plan view, unlike the embodiment. That is, in the first comparative example, the aperture Ap_R is included in the pixel electrode 131R, and the pixel electrode 131R is included in the reflective electrode 62R in plan view.

[0045] 9, in the first comparative example, of the light emitted from the organic layer 132 near the end P1 of the aperture Ap_R, the light that is emitted in a diagonal direction opposite to the Z direction passes through the pixel electrode 131R, is reflected by the reflective electrode 62R, and passes outside the aperture Ap_R before being emitted. Since the optical path length in the optical resonance structure becomes longer for light with a longer wavelength, it is easy for peripheral emission to occur, in which red light in particular passes through other than the aperture Ap_R and is visible to the user.

[0046] 6, of the light emitted from the organic layer 132 near the end P1 of the opening Ap_R, the light that is emitted in a diagonal direction opposite to the Z direction passes through the pixel electrode 131R, is reflected by the reflective electrode 62R, and passes through the pixel electrode 131R again. The reflected light from the reflective electrode 62R is attenuated when passing through the pixel electrode 131R again, and thus peripheral emission is suppressed. Note that, although the description here focuses on the red pixel unit 110R, the green pixel unit 110G and the blue pixel unit 110B also suppress peripheral emission caused by the light reflected in an oblique direction being visible, just like the pixel unit 110R.

[0047] In the embodiment, the width L of the ends P2 and P3 along the X direction 23 is the width L of the ends P1 and P2 12 According to such a configuration, the width L 23 But width L 12 Compared to the following configuration, the proportion of oblique light reflected by the reflective electrode 62R that is absorbed by the pixel electrode 131R is higher, so that peripheral light emission can be further suppressed. The width refers to the distance between two points along a specific direction.

[0048] In the embodiment, the width L of the ends P2 and P3 along the X direction 23 is the width L of the ends P1 and P2 along the X direction 12 According to such a configuration, a proportion of the oblique light reflected by the reflective electrode 62R that is absorbed by the pixel electrode 131R is higher than in a configuration in which the widths of the ends P2 and P3 are equal to or smaller than the widths of the ends P1 and P2, so that peripheral light emission can be further suppressed.

[0049] In the embodiment, the width L of the ends P2 and P3 along the X direction 23 is the width L of the ends P3 and P6 along the X direction 36 , that is, it is preferable that the width L is larger than the width of the gap between the pixel electrodes 131R adjacent to each other along the X direction. 23 is the width L 36 Compared to the following configuration, the proportion of oblique light reflected by the reflective electrode 62R that is absorbed by the pixel electrode 131R is higher, so that peripheral light emission can be further suppressed.

[0050] Titanium nitride used in the pixel electrodes 131R, 131G, and 131B has light reflectivity and absorptivity, so its film thickness is preferably as thin as possible, specifically, 5 nm or more and less than 20 nm.

[0051] Around the openings Ap_R, Ap_G, and Ap_B, there are steps due to other elements, such as contact holes. When light is emitted at the steps, the optical path length becomes longer than the design value, so that light components with long wavelengths tend to be emitted to the outside. For example, when peripheral light is emitted in the green pixel section 130G, the light becomes reddish. Titanium nitride used for the pixel electrodes 131R, 131G and 131B has high absorptance and reflectance for light on the long wavelength side, so by making it wider than the openings Ap_R, Ap_G and Ap_B in a plan view, peripheral light emission can be suppressed.

[0052] FIG. 10 is a cross-sectional view of a main portion showing the configuration from the reflective electrode to the common electrode in this embodiment, in particular the detailed configuration of the organic layer. The optical adjustment layer 70 laminated on the reflective electrodes 62R, 62G, and 62B has a thickness L R , L G , L B The organic layer 132 is provided between the pixel electrode 131R, 131G or 131B and the common electrode 133. The organic layer 132 is composed of the following layers: In detail, the organic layer 132 is configured by laminating a hole injection layer 1321 (HIL: Hole Injection Layer), a hole transport layer 1322 (HTL: Hole Transporting Layer), a red light emitting layer 132R (R-EML: Red EMission Layer), an intermediate layer 1323, a blue light emitting layer 132B (B-EML: Blue EMission Layer), a green light emitting layer 132G (G-EML: Green EMission Layer), an electron blocking layer 1324 (EBL: Electron Blocking Layer), an electron transport layer 1325 (ETL: Electron Transporting Layer), and an electron injection layer 1326 (EIL: Electron Injection Layer) in this order.

[0053] FIG. 10 shows a configuration for emitting white light, but as shown in FIG. 11, a red light emitting layer 132R, a green light emitting layer 132G and a blue light emitting layer 132B may be provided for each of pixel units 130R, 130G and 130B. In this configuration, a red light-emitting layer 132R, a green light-emitting layer 132G, and a blue light-emitting layer 132B are provided for each color (each sub-pixel), thereby achieving power savings compared to a configuration in which three light-emitting layers are stacked, i.e., the configuration shown in Figure 10. 11, an electron blocking layer 1327 (EBL) is provided between the red light-emitting layer 132R, the green light-emitting layer 132G, or the blue light-emitting layer 132B and the hole transport layer 1322. The pixel separation layer 134 is omitted in FIGS. 10 and 11.

[0054] The advantages of the optical resonant structure having different thicknesses for each color in this embodiment will be described in comparison with a second comparative example.

[0055] FIG. 12 is a cross-sectional view of a main part showing the configuration of an electro-optical device according to a second comparative example. In the second comparative example, the organic layer 132 has the same layer structure as the organic layer 132 according to the embodiment, but the optical adjustment layer 70 is not provided, and the reflective electrode 62R also serves as the pixel electrode 131R. Similarly, in the second comparative example, the reflective electrode 62G also serves as the pixel electrode 131G, and the reflective electrode 62B also serves as the pixel electrode 131B.

[0056] In the second comparative example, for example, in the red pixel unit 110R, light emitted from the organic layer 132 is reflected by the reflective electrode 62R, and part of the reflected light passes through the common electrode 133 and is visually recognized by the user, while the remainder of the reflected light is reflected by the common electrode 133 and heads toward the reflective electrode 62R. However, in the second comparative example, the distance between the reflective electrode 62R, 62G or 62B and the common electrode 133 is the same for each color, so that resonance does not occur according to the optical path length, and the light extraction efficiency decreases.

[0057] Furthermore, a natural oxide film with a thickness of about several nm is formed on the surface of the reflective electrodes 62R, 62G, and 62B, which are mainly made of aluminum, making it difficult for charges to be injected from the anode. Therefore, in order to ensure the required brightness, it is necessary to increase the driving voltage of the OLED 130. However, in the microdisplay panel, the withstand voltage of the transistor 122 is limited in order to achieve fine pixel resolution, so the OLED 130 cannot be driven at a high voltage. Therefore, in the second comparative example, the maximum brightness of the microdisplay panel is reduced.

[0058] In order to prevent natural oxide films from being formed on the surfaces of the reflective electrodes 62R, 62G, and 62B, a configuration in which a conductive film 63 (e.g., titanium nitride) is provided between the reflective electrodes 62R, 62G, and 62B and the hole injection layer 1321 as shown in Fig. 13 is also possible. This configuration is the third comparative example. However, in the third comparative example, the reflectance of the reflective electrodes 62R, 62G, and 62B is reduced due to the presence of the conductive film 63, and the light extraction efficiency is further reduced compared to the second comparative example.

[0059] In this embodiment, a resonant structure is formed in which light emitted from the organic layer 132 is repeatedly reflected between the reflective electrode 62R, 62G, or 62B and the common electrode 133. The optical distance in the resonant structure is determined by the thickness L of the optical adjustment layer 72 for each of RGB. R , L G , L B This increases the light extraction efficiency according to the wavelength.

[0060] Fig. 14 is a diagram showing the dimensions of each part in this embodiment and the third comparative example, and Fig. 15 is a diagram showing the power consumption and color gamut coverage in this embodiment and the third comparative example. In the third comparative example, the optical adjustment layer 70 is not provided, so the light extraction efficiency is reduced. Therefore, in the third comparative example, the power consumption is increased and the reproducible color gamut is reduced compared to this embodiment. In contrast, in this embodiment, the light extraction efficiency is improved, so that power consumption can be reduced and the reproducible color gamut can be expanded.

[0061] In this embodiment, the titanium nitride used for the pixel electrodes 131R, 131G, and 131B is a conductive layer used as a barrier metal in the semiconductor manufacturing process, so there is no risk of heavy metal contamination in the semiconductor manufacturing process. Therefore, using titanium nitride for the pixel electrodes 131R, 131G, and 131B does not require any special ingenuity in the semiconductor manufacturing process.

[0062] In the manufacturing process of the electro-optical device 10, the process up to forming the pixel separation layer 134 and providing the openings Ap_R, Ap_G, and Ap_B is a semiconductor manufacturing process, and the process after this process is the formation of the organic layer 132, and a different manufacturing device is used. Therefore, when the substrate provided with the openings Ap_R, Ap_G, and Ap_B is transferred to a manufacturing device for forming the organic layer 132, the substrate is exposed to the atmosphere. However, in this embodiment, the pixel electrodes 131R, 131G, and 131B that open at the openings Ap_R, Ap_G, and Ap_B are nitride films, so the generation of natural oxide films is limited. Therefore, the substrate can be transferred to a manufacturing device for forming the organic layer 132 while maintaining low contact resistance on the surfaces of the pixel electrodes 131R, 131G, and 131B.

[0063] Injection of holes from the pixel electrodes 131R, 131G, and 131B, which are conductive titanium nitride, into the organic layer 132 is possible by using a material with strong electrical attraction. One such material is HAT-CN (2,3,6,7,10,11-Hexacyano-1,4,5,8,9,12-Hexaazatriphenylene). If the hole injection layer 1321 is made of an organic thin film containing a cyan group, such as HAT-CN, it becomes easy to inject holes even from titanium nitride, which does not have a high work function.

[0064] In the embodiment, an OLED is given as an example of a light-emitting element, but the light-emitting element is not limited to this, and may be an inorganic EL element using an inorganic material, or a μLED element.

[0065] Next, an electronic device to which the electro-optical device 10 according to the embodiment is applied will be described. The electro-optical device 10 is suitable for applications requiring small-sized pixels and high-definition displays. Therefore, a head-mounted display will be taken as an example of the electronic device.

[0066] FIG. 16 is a diagram showing the appearance of a head mounted display, and FIG. 17 is a diagram showing the optical configuration thereof. First, as shown in Fig. 16, the head mounted display 300 has temples 310, a bridge 320, and lenses 301L and 301R in appearance similar to general eyeglasses. Also, as shown in Fig. 17, the head mounted display 300 has an electro-optical device 10L for the left eye and an electro-optical device 10R for the right eye provided near the bridge 320 and on the rear side of the lenses 301L and 301R (the lower side in the figure). The image display surface of the electro-optical device 10L is disposed to the left in FIG. 17. As a result, the image displayed by the electro-optical device 10L is output in the 9 o'clock direction in the figure via the optical lens 302L. The half mirror 303L reflects the image displayed by the electro-optical device 10L in the 6 o'clock direction, while transmitting light incident from the 12 o'clock direction. The image display surface of the electro-optical device 10R is disposed to the right, opposite the electro-optical device 10L. As a result, the image displayed by the electro-optical device 10R is output in the 3 o'clock direction in the figure via the optical lens 302R. The half mirror 303R reflects the image displayed by the electro-optical device 10R in the 6 o'clock direction, while transmitting light incident from the 12 o'clock direction.

[0067] In this configuration, a person wearing the head mounted display 300 can observe images displayed by the electro-optical devices 10L and 10R in a see-through state in which the images are superimposed on the outside world. Furthermore, in this head mounted display 300, when the electro-optical device 10L displays an image for the left eye and the electro-optical device 10R displays an image for the right eye among the binocular images with parallax, the wearer can perceive the displayed image as if it had depth and a three-dimensional effect.

[0068] In addition, electronic devices including the electro-optical device 10 can be applied to electronic viewfinders in video cameras and interchangeable lens digital cameras, portable information terminals, display units of wristwatches, light bulbs of projection projectors, and the like, in addition to the head mounted display 300.

[0069] From the above description, for example, preferred aspects of the present disclosure can be understood as follows. In addition, in order to facilitate understanding of each aspect, reference numerals in the drawings are written in parentheses for convenience, but the present invention is not limited to the illustrated aspects.

[0070] An electro-optical device according to one embodiment of the present disclosure includes a first reflective layer (62R) and a second reflective layer (62G) that are light reflective and adjacent to each other along a first direction in a planar view, a first pixel electrode (131R) and a second pixel electrode (131G) that are made of a metal nitride and adjacent to each other along the first direction (X direction) in a planar view, a first optical adjustment layer (70) that is insulating and light transmissive and is provided between the first reflective layer (62R) and the first pixel electrode (131R), and an insulating and light transmissive layer (70) that is disposed between the second reflective layer and the second pixel electrode. the insulating layer (134) opening at a first opening (Ap_R) relative to the first pixel electrode (131R) in a plan view and opening at a second opening (Ap_G) relative to the second pixel electrode (131G) in a plan view; a common electrode (133); and an organic layer (132) including a light-emitting layer that is provided between the common electrode (133), the insulating layer (134), the first pixel electrode (131R) or the second pixel electrode (131G), and Among the ends of the first reflective layer (62R), an end adjacent to the second reflective layer (62G) is a second end (P2); among the ends of the first pixel electrode (131R), an end adjacent to the second pixel electrode (131G) is a third end (P3); among the ends of the second opening (Ap_G), an end adjacent to the first opening (Ap_R) is a fourth end (P4); and among the ends of the second reflective layer (62G), an end adjacent to the first reflective layer (62R) is a fifth end (P5). Among the ends of the second pixel electrode (131G), the end adjacent to the first pixel electrode (131R) is the sixth end (P6), the first end (P1), the second end (P2), and the third end (P3) are located in this order from the first opening (Ap_R) toward the second opening (Ap_G) along the first direction (X direction), and the fourth end (P4), the fifth end (P5), and the sixth end (P6) are located in this order from the second opening (Ap_G) toward the first opening (Ap_R) along the first direction (X direction). According to the first aspect, it is possible to reduce peripheral light emission.

[0071] An electro-optical device (10) according to a specific aspect (aspect 2) of aspect 1 includes a third reflective layer (62R) having optical reflectivity and adjacent to the first reflective layer (62R) along a second direction (Y direction) intersecting the first direction (X direction) in a planar view, and a third pixel electrode (131R) made of a metal nitride and adjacent to the first pixel electrode (131R) along the second direction (Y direction) in a planar view, The first optical adjustment layer (70) is provided between the third reflective layer (62R) and the third pixel electrode (131R), the insulating layer (134) opens at a third opening (Ap_R) relative to the third pixel electrode (131R) in a plan view, the organic layer (132) is provided between the insulating layer (134) or the third pixel electrode (131R), and, in a plan view, an end of the third opening (Ap_R) adjacent to the first opening (Ap_R) is a seventh end (P7 ), among the ends of the third reflective layer (62R), the end adjacent to the first reflective layer (62R) is the eighth end (P8), and among the ends of the third pixel electrode (131R), the end adjacent to the first pixel electrode (131R) is the ninth end (P9), and the seventh end (P7), the eighth end (P8) and the ninth end (P9) are located in this order from the third opening (Ap_R) to the first opening (Ap_R) along the second direction (Y direction).

[0072] In the electro-optical device (10) according to a specific aspect (aspect 3) of aspect 1, the width (L) between the second end (P2) and the third end (P3) along the first direction (X direction) in a plan view is 23 ) is the width (L) between the first end (P1) and the second end (P2) 12 ) is greater than

[0073] In the electro-optical device (10) according to a specific aspect (aspect 4) of aspect 1, the width (L) between the second end (P2) and the third end (P3) along the first direction (X direction) in a plan view is 23 ) is the width (P 36 ) is greater than

[0074] In an electro-optical device (10) according to a specific embodiment (embodiment 5) of embodiment 1, the organic layer (132) is in contact with the first pixel electrode (131R) and the second pixel electrode (131G) and has a hole injection layer (1321) made of HAT-CN.

[0075] In the electro-optical device (10) according to a specific embodiment (embodiment 6) of embodiment 1, the thickness of the first pixel electrode (131R) and the second pixel electrode (131G) is equal to or greater than 5 nm and less than 20 nm.

[0076] The electronic device (300) according to the seventh aspect includes the electro-optical device (10) according to any one of the first to sixth aspects. [Explanation of symbols]

[0077] 10...electro-optical device, 12...scanning line, 14...data line, 100...display area, 62B...reflective electrode (first reflective layer, third reflective layer), 62G...reflective electrode (second reflective layer), 110...pixel portion, 121, 122...transistor, 130...OLED, 131R...pixel electrode (first pixel electrode, third pixel electrode), 131G...pixel electrode (second pixel electrode), 132...organic layer, 1321...hole injection layer, 133...common electrode.

Claims

1. a first reflective layer and a second reflective layer that have light reflectivity and are adjacent to each other along a first direction in a plan view; a first pixel electrode and a second pixel electrode made of a metal nitride and adjacent to each other along the first direction in a plan view; a first optical adjustment layer having insulating properties and optical transparency and provided between the first reflective layer and the first pixel electrode; a second optical adjustment layer having insulating properties and optical transparency and provided between the second reflective layer and the second pixel electrode; an insulating layer that opens to the first pixel electrode at a first opening in a plan view and opens to the second pixel electrode at a second opening in a plan view; A common electrode; an organic layer including a light-emitting layer, the organic layer being provided between the common electrode and the insulating layer, the first pixel electrode, or the second pixel electrode; having In plan view, Among the ends of the first opening, an end adjacent to the second opening is a first end, Among the ends of the first reflective layer, an end adjacent to the second reflective layer is a second end, an end portion of the first pixel electrode adjacent to the second pixel electrode is a third end portion; Among the ends of the second opening, an end adjacent to the first opening is a fourth end, Among the ends of the second reflective layer, an end adjacent to the first reflective layer is a fifth end, Among the ends of the second pixel electrode, an end adjacent to the first pixel electrode is a sixth end, the first end, the second end, and the third end are located in this order from the first opening toward the second opening along the first direction, The fourth end, the fifth end, and the sixth end are located in this order from the second opening toward the first opening along the first direction. Electro-optical device.

2. a third reflective layer having light reflectivity and adjacent to the first reflective layer along a second direction intersecting the first direction in a plan view; a third pixel electrode made of a metal nitride and adjacent to the first pixel electrode along the second direction in a plan view; having the first optical adjustment layer is provided between the third reflective layer and the third pixel electrode, the insulating layer has a third opening that is open to the third pixel electrode in a plan view; the light-emitting layer is provided between the insulating layer and the third pixel electrode, In plan view, Among the ends of the third opening, an end adjacent to the first opening is a seventh end, Among the ends of the third reflective layer, an end adjacent to the first reflective layer is an eighth end, Among the ends of the third pixel electrode, an end adjacent to the first pixel electrode is a ninth end, The seventh end, the eighth end, and the ninth end are located in this order from the third opening toward the first opening along the second direction.

2. The electro-optical device according to claim 1.

3. In a plan view, a width between the second end and the third end along the first direction is larger than a width between the first end and the second end.

2. The electro-optical device according to claim 1.

4. In a plan view, a width between the second end and the third end along the first direction is greater than a width between the third end and the sixth end.

2. The electro-optical device according to claim 1.

5. The organic layer is in contact with the first pixel electrode and the second pixel electrode; It has a hole injection layer made of HAT-CN.

2. The electro-optical device according to claim 1.

6. The thickness of the first pixel electrode and the second pixel electrode is 5 nm or more and less than 20 nm 2. The electro-optical device according to claim 1.

7. 7. An electronic apparatus comprising the electro-optical device according to claim 1.

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