Light-emitting device, electronic appliance and illumination device

Abstract

To provide a light-emitting device with flexibility and high reliability.SOLUTION: A light-emitting device includes a first flexible substrate, a second flexible substrate, a light-emitting element between the first flexible substrate and the second flexible substrate, a first bonding layer between the second flexible substrate and the light-emitting element, and a second bonding layer with a frame shape that surrounds the first bonding layer. The light-emitting element includes a layer containing a light-emitting organic compound between a pair of electrodes. The second bonding layer has a higher gas barrier property than the first bonding layer.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an article, a method, or a manufacturing method. Alternatively, the present invention relates to a process, a machine, a The present invention relates to a composition of matter. The present invention relates to a semiconductor device, a light-emitting device, a display device, an electronic device, a lighting device, and a manufacturing method thereof. In particular, one aspect of the present invention is an organic electroluminescence (EL) display device. This paper describes a light-emitting device utilizing the EL phenomenon and its manufacturing method. do. [Background technology]

[0002] In recent years, light-emitting devices and display devices are expected to be used for a variety of purposes, and diversification is required. There are.

[0003] For example, in light-emitting devices and display devices for use in portable devices, etc., the devices are required to be thin and lightweight. It is also required that the material be resistant to damage.

[0004] Light-emitting elements that utilize the EL phenomenon (also referred to as EL elements) are easy to make thin and lightweight. It has features such as being able to respond quickly to signals and being able to be driven by a low-voltage DC power supply. Applications of these materials to light-emitting devices and display devices are currently being considered.

[0005] For example, Patent Document 1 discloses a film substrate on which transistors and organic EL display devices are mounted. A flexible active matrix type light emitting device having an EL element is disclosed.

[0006] The reliability of organic EL elements is impaired by impurities such as moisture and oxygen that enter from the outside. There is a problem.

[0007] Impurities such as moisture and oxygen from outside the organic EL element can damage the organic compounds that make up the organic EL element. If it penetrates into metal or other materials, the lifespan of the organic electroluminescence element may be significantly reduced. The organic compounds and metal materials used in organic EL elements react with impurities such as moisture and oxygen, This is because it deteriorates.

[0008] Therefore, research and development is being conducted on technology to seal organic EL elements to prevent the intrusion of impurities. is currently underway. [Prior art documents] [Patent documents]

[0009] [Patent Document 1] JP 2003-174153 A Summary of the Invention [Problem to be solved by the invention]

[0010] One embodiment of the present invention is a flexible and highly reliable light-emitting device, display device, electronic device, or It is an object of the present invention to provide a lighting device.

[0011] Another embodiment of the present invention is a method for manufacturing a flexible light-emitting device with high reliability. Another object of the present invention is to improve the manufacturing process of the light-emitting device. One of the objects of the present invention is to suppress the inclusion of impurities in the process.

[0012] Another embodiment of the present invention provides a novel light-emitting device, a display device, an electronic device, or a lighting device. Another object of the present invention is to provide a lightweight light-emitting device, a display device, Another object of the present invention is to provide an electronic device or a lighting device. The present invention aims to provide a light-emitting device, a display device, an electronic device, or a lighting device that is not easily damaged. Another embodiment of the present invention is a light-emitting device, a display device, an electronic device, or a semiconductor device that is thin. Another object is to provide a lighting device.

[0013] The description of these problems does not preclude the existence of other problems. It is understood that the embodiment does not necessarily have to solve all of these problems. Problems other than those mentioned above will become apparent from the description, drawings, claims, etc. Other issues can be extracted from the description, drawings, claims, etc. [Means for solving the problem]

[0014] A light-emitting device according to one embodiment of the present invention includes a first flexible substrate, a second flexible substrate, and a first flexible a light-emitting element between the substrate and the second flexible substrate, and a first light-emitting element between the second flexible substrate and the light-emitting element. and a frame-shaped second bonding layer surrounding the first bonding layer. A layer containing a light-emitting organic compound is provided between the electrodes, and the second bonding layer is more gas-insoluble than the first bonding layer. High barrier properties.

[0015] In addition, a light-emitting device according to one embodiment of the present invention includes a first flexible substrate, a second flexible substrate, and a first A transistor between the flexible substrate and the second flexible substrate, and a transistor between the flexible substrate and the second flexible substrate. a light emitting element between the substrates, an adhesive layer between the first flexible substrate and the transistor, and a second flexible substrate. a first bonding layer between the conductive substrate and the light emitting element, and a frame-shaped second bonding layer surrounding the first bonding layer; The light-emitting element has a layer including a light-emitting organic compound between a pair of electrodes, and a second bonding The layer has a higher gas barrier property than the first bonding layer.

[0016] In addition, a light-emitting device according to one embodiment of the present invention includes a first flexible substrate, a second flexible substrate, and a first An insulating layer having a high gas barrier property between the flexible substrate and the second flexible substrate, and A light emitting element between the flexible substrates, an adhesive layer between the first flexible substrate and the insulating layer, and a second flexible substrate. a first bonding layer between the conductive substrate and the light emitting element, and a frame-shaped second bonding layer surrounding the first bonding layer; The light-emitting element has a layer including a light-emitting organic compound between a pair of electrodes, and a second bonding The layer has a higher gas barrier property than the first bonding layer.

[0017] In addition, a light-emitting device according to one embodiment of the present invention includes a first flexible substrate, a second flexible substrate, and a first A first insulating layer having a high gas barrier property between the flexible substrate and the second flexible substrate, and a first insulating a transistor between the layer and the second flexible substrate; and a transistor between the layer and the second flexible substrate. a light-emitting element, a colored layer between the light-emitting element and the second flexible substrate, and a colored layer between the colored layer and the second flexible substrate. A second insulating layer having a high gas barrier property between the substrates, and a first flexible substrate and a first insulating layer a first adhesive layer between the color layer and the light-emitting element, and a frame surrounding the first adhesive layer; a second bonding layer having a shape similar to that of the first bonding layer, and a second adhesive layer between the second insulating layer and the second flexible substrate. The light-emitting element has a layer containing a light-emitting organic compound between a pair of electrodes, a first bonding layer, a coloring layer, The layer, the second insulating layer, the second adhesive layer, and the second flexible substrate are transparent to light emitted by the light emitting element. However, the second bonding layer has a higher gas barrier property than the first bonding layer.

[0018] Further, an electronic device having a display portion including the light-emitting device having any of the above structures is also one embodiment of the present invention.

[0019] Further, a lighting device having a light-emitting portion including the light-emitting device having any of the above structures is also one embodiment of the present invention.

[0020] In this specification, the term "light-emitting device" includes a display device using a light-emitting element. A connector, such as anisotropic conductive film or TCP (Tape Carrier) is attached to the optical element. The module has a printed wiring board attached to the end of the TCP. The module or light emitting element is equipped with a COG (Chip On Glass) method. Modules on which ICs (integrated circuits) are directly mounted are also included in the category of light-emitting devices. This also includes light-emitting devices used in lighting fixtures, etc. Effect of the Invention

[0021] According to one embodiment of the present invention, a novel light-emitting device, a display device, an electronic device, or a lighting device is provided. According to one embodiment of the present invention, a flexible and highly reliable light-emitting device can be provided. A display device, an electronic device, or a lighting device can be provided.

[0022] In addition, according to one embodiment of the present invention, a manufacturing process of a flexible and highly reliable light-emitting device can be achieved. In addition, according to one embodiment of the present invention, the manufacturing process of the light-emitting device can be performed. This makes it possible to suppress the inclusion of impurities in the liquid.

[0023] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. Effects other than these may also be included. The above is self-evident from the description, drawings, claims, etc. Other effects can be extracted from the claims and other descriptions. [Brief description of the drawings]

[0024] [Figure 1] 1A and 1B illustrate an example of a light-emitting device. [Diagram 2] 1A and 1B illustrate an example of a light-emitting device. [Diagram 3] 1A and 1B illustrate an example of a light-emitting device. [Figure 4] 1A and 1B illustrate an example of a light-emitting device. [Diagram 5] 1A and 1B illustrate an example of a light-emitting device. [Figure 6] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 7] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 8] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 9] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 10] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 11] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 12] FIG. 4 is a diagram illustrating a planar shape of a peeling layer. [Figure 13] 3A to 3C illustrate an example of a method for manufacturing a peeling layer. [Figure 14] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 15] 1A to 1C illustrate examples of electronic devices and lighting devices. [Figure 16] FIG. [Figure 17] 1A and 1B show a light-emitting device which is a sample of an embodiment; [Figure 18] FIG. 13 shows a light-emitting device that is a comparative sample of the embodiment. [Figure 19] 1 is a photograph showing a light emitting device according to an embodiment of the present invention. [Figure 20] Photographs illustrating the fabrication of flexible samples using peeling and transposition. [Figure 21] 1A and 1B are diagrams showing an example of a light-emitting device that can be used for a light-emitting portion. [Figure 22]1 is a photograph showing an example of a light-emitting device that can be used as the light-emitting portion. [Figure 23] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. [Figure 24] 1A to 1C illustrate an example of a method for manufacturing a light-emitting device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are referred to as the same parts. The same reference numerals are used in common among different drawings, and the repeated explanations are omitted. When referring to a function, the same hatch pattern may be used and no particular reference number may be given.

[0027] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, for ease of understanding. Therefore, the disclosed invention may not necessarily represent the actual position, size, range, etc. The present invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0028] (Embodiment 1) In this embodiment, a flexible light-emitting device according to one embodiment of the present invention and a manufacturing method of the light-emitting device will be described. This will be described with reference to FIGS.

[0029] A light-emitting device according to one embodiment of the present invention includes a light-emitting element sealed with a pair of flexible substrates and a bonding layer. has.

[0030] Since the bonding layer is exposed to the side surface of the light emitting device, if the gas barrier property of the bonding layer is poor, the light emitting device may become unusable. Impurities such as moisture and oxygen from the outside enter the organic EL element. For example, the light-emitting part shrinks (in this case, the brightness deterioration from the edge of the light-emitting part). This means that the non-light-emitting area of ​​the light-emitting part will be enlarged. The bonding layer preferably has high gas barrier properties (particularly low water vapor permeability and low oxygen permeability). stomach.

[0031] In addition, when a liquid composition is used as the material for the bonding layer, if the volume shrinkage caused by hardening is large, Stress may be applied to the organic EL element, damaging it and causing light emission defects. Therefore, it is preferable that the material used for the bonding layer undergoes small volumetric shrinkage upon hardening.

[0032] In addition, when the bonding layer is located on the side that transmits the light emitted from the organic EL element, the light extraction of the light emitting device In order to increase the efficiency of the bonding layer, it is preferable that the bonding layer has high light transmittance. It is preferable that the refractive index of the film is high.

[0033] As described above, there are several properties required for the bonding layer, and the material for the bonding layer must have at least two of these properties. It is extremely difficult to achieve both of the above.

[0034] Therefore, in the light-emitting device according to one embodiment of the present invention, two types of bonding are provided between the flexible substrate and the organic EL element. Specifically, for example, a bonding layer having a higher gas barrier property than the bonding layer is used. The outer bonding layer is made of a material with a higher gas barrier property than the inner bonding layer. The adhesive layer on the side has low volume shrinkage when cured, high light transmittance (especially visible light transmittance), and Even if a material with low gas barrier properties, such as a high refractive index, is used, moisture from the outside This can prevent oxygen and other contaminants from entering the light-emitting device, thereby preventing shrinkage of the light-emitting portion. Thus, a highly reliable light emitting device can be realized.

[0035] A layer with high gas barrier properties has, for example, a gas permeability, oxygen permeability, or water vapor permeability of 1×1 0 -5 [g / m 2 ·day] or less, preferably 1 × 10 -6 [g / m 2 ·day] Below, More preferably, 1×10 -7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·day] or less.

[0036] A light-emitting device according to one embodiment of the present invention is shown in FIGS.

[0037] The light-emitting device shown in FIG. 1A includes a first flexible substrate 101, a second flexible substrate 111, and A device layer 105 between a first flexible substrate 101 and a second flexible substrate 111, and a first flexible The adhesive layer 103 between the flexible substrate 101 and the device layer 105 and the second flexible substrate 111 and the device layer 105 are A first bonding layer 107 between the layers 105 and a frame-shaped second bonding layer surrounding the first bonding layer 107 The element layer 105 includes an organic EL element.

[0038] The second bonding layer 109 has a higher gas barrier property than the first bonding layer 107. 09, for example, has a gas permeability, oxygen permeability, or water vapor permeability of 1×10 -5 [g / m 2 ·day] or less, preferably 1 × 10 -6 [g / m 2·day] or less, more preferably 1 ×10 -7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·da y] or less.

[0039] In the film thickness direction, the distance between the organic EL element and the adhesive layer 103 is shorter than the shortest distance between the organic EL element and the adhesive layer 103. It is preferable that the shortest distance between the first bonding layer 107 is shorter than the shortest distance between the first bonding layer 107 in the film thickness direction. Even if the distance between the EL element and the first bonding layer 107 is short, the first bonding layer 107 has a stronger gas barrier. Since the organic EL element is surrounded by the second bonding layer 109 having high reflectivity, impurities do not enter the organic EL element. This can be suppressed.

[0040] For example, the device layer 105 includes a transistor between the adhesive layer 103 and the first bonding layer 107, and a transistor An organic EL element may be provided between the transistor and the first bonding layer 107. The element layer 105 includes an insulating layer between the adhesive layer 103 and the first bonding layer 107, and a layer between the insulating layer and the first An organic EL element may be provided between the bonding layers 107. In this case, the gas barrier property of the insulating layer The insulating layer prevents the first flexible substrate 101 from contacting the organic EL element. The insulating layer is provided between the adhesive layer 103 and the transistor, and can suppress the intrusion of impurities. It may be an insulating layer that constitutes a transistor, or it may be an insulating layer that is not connected to a transistor. It may be provided between the organic EL elements.

[0041] The light emitting devices shown in FIG. 1(B) and (C) each include a first flexible substrate 101 and a second flexible substrate 102. A flexible substrate 111 and a device layer 1 between the first flexible substrate 101 and the second flexible substrate 111 05, a third bonding layer 113 between the first flexible substrate 101 and the element layer 105, and a third A frame-shaped fourth bonding layer 115 surrounding the bonding layer 113, the second flexible substrate 111, and the element layer A first bonding layer 107 between the first bonding layer 105 and a frame-shaped second bonding layer 106 surrounding the first bonding layer 107. The element layer 105 includes an organic EL element. The second bonding layer 109 includes a first bonding layer 109. The fourth bonding layer 115 has a higher gas barrier property than the first bonding layer 107, and the fourth bonding layer 115 has a higher gas barrier property than the third bonding layer 11. Has better gas barrier properties than 3.

[0042] As shown in FIG. 1B, the light-emitting device according to one embodiment of the present invention has a second bonding layer on a side surface of the light-emitting device. The fourth bonding layer 109 and the fourth bonding layer 115 may be exposed. In this way, one of the second bonding layer 109 and the fourth bonding layer 115 covers the other, and the light emitting device is Alternatively, one of the second bonding layer 109 and the fourth bonding layer 115 may be exposed on the surface.

[0043] A more specific configuration example will be described below.

[0044] <Configuration example 1> FIG. 2(A) shows a plan view of the light emitting device, and FIGS. 2(B) and 2(C) show the light emitting device along the dashed line X in FIG. 2(A). The light emitting devices shown in FIGS. 2(A) to 2(C) are color This is a top-emission type light-emitting device that uses a filter system.

[0045] The light-emitting device shown in FIG. 2(A) includes a light-emitting portion 491, a driving circuit portion 493, and an FPC (Flexib The light emitting unit 491 and the driving circuit unit The organic EL element and the transistor included in 493 are supported on the flexible substrate 420, the flexible substrate 428, Sealing is provided by the first bonding layer 407 and the second bonding layer 404 .

[0046] The light emitting device shown in FIGS. 2B and 2C includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, and a , transistor 455, insulating layer 463, insulating layer 465, insulating layer 405, organic EL element 45 0 (the first electrode 401, the EL layer 402, and the second electrode 403), the first bonding layer 407, The second bonding layer 404, the overcoat 453, the light-shielding layer 431, the colored layer 432, and the insulating layer 22 6, adhesive layer 426, flexible substrate 428, and conductive layer 457. The adhesive layer 426, the insulating layer 226, the first bonding layer 407, the overcoat 453, and the second The electrode 403 is transparent to visible light.

[0047] In the light-emitting portion 491 of the light-emitting device shown in FIGS. 2B and 2C, the adhesive layer 422 and the insulating layer 424 A transistor 455 and an organic EL element 450 are provided on a flexible substrate 420 via a The organic EL element 450 includes a first electrode 401 on an insulating layer 465 and a second electrode 401. The first electrode 401 has an EL layer 402 on the first electrode 401 and a second electrode 403 on the EL layer 402. The first transistor 455 is electrically connected to a source electrode or a drain electrode of the first transistor 455. The end of the electrode 401 is covered with an insulating layer 405. The first electrode 401 reflects visible light. In addition, the light-emitting device is preferably provided with a first bonding layer 407 and an organic EL element 450. The light-shielding layer 4 has a colored layer 432 overlapping therewith, and overlaps the insulating layer 405 via the first bonding layer 407. 31.

[0048] The driver circuit portion 493 includes a plurality of transistors. One of the transistors 493 is shown. 4 shows an example in which the driver circuit portion 493 is located inside the frame-shaped second bonding layer 404, but It may be located.

[0049] The conductive layer 457 transmits signals (video signals, clock signals, start signals, etc.) from the outside to the driving circuit section 493. The external input terminal is electrically connected to the external input terminal that transmits a signal (such as a start signal or a reset signal) or a potential. Here, an example is shown in which FPC495 is provided as an external input terminal. The conductive layer 457 is made of the same material and the same as the source and drain electrodes of the transistor 455. The connecting body 497 on the insulating layer 226 is connected to the conductive layer 457. The connector 497 is connected to the FPC 495. 5 and the conductive layer 457 are electrically connected.

[0050] The conductive layer 457 is located on the outer side of the second bonding layer 404, so that the FPC 495 and the connection body 49 Moisture and the like are likely to penetrate into the connection portion of the connector 497 and the conductive layer 457. Even in this case, it is possible to prevent impurities such as moisture from entering the organic EL element 450, which is preferable.

[0051] The insulating layer 463 has an effect of suppressing diffusion of impurities into the semiconductor that constitutes the transistor. The insulating layer 465 also has a planarizing function to reduce surface irregularities caused by the transistor. It is preferable to select an insulating layer having a

[0052] FIG. 2C is different from FIG. 2B in that the insulating layer 465 is not exposed on the side surface of the light emitting device. When an organic insulating material with low gas barrier properties is used as the material of the insulating layer 465, It is preferable that the second insulating layer 465 is not exposed to the side of the light emitting device. The bonding layer 404 is located on the side of the light emitting device, so that the reliability of the light emitting device can be improved. Depending on the material of the insulating layer 465, as shown in FIG. The insulating layer 465 may be exposed at the edges of the light emitting device.

[0053] The second bonding layer 404 has a higher gas barrier property than the first bonding layer 407. This makes it possible to prevent moisture and oxygen from entering the light emitting device through the side surface of the light emitting device. As a result, a highly reliable light emitting device can be realized.

[0054] In the configuration example 1, the light emitted from the organic EL element 450 is taken out of the light emitting device via the first bonding layer 407. Therefore, the first bonding layer 407 has a higher light-transmitting property than the second bonding layer 404. In addition, the first bonding layer 407 has a refractive index higher than that of the second bonding layer 404. In addition, the first bonding layer 407 has a higher hardness than the second bonding layer 404. It is preferable that the volume shrinkage during heating is small.

[0055] It is preferable that the insulating layer 424 has a high gas barrier property. Similarly, the insulating layer 226 can prevent moisture and oxygen from entering the light emitting device. It is preferable that the barrier property is high. This prevents moisture and oxygen from entering through the flexible substrate 428. This can prevent intrusion into the device.

[0056] <Configuration example 2> FIG. 3(A1) shows a plan view of the light emitting device, and FIG. 3(B) shows a cross-sectional view of the light emitting device along the dashed line X21 in FIG. 3(A1). The cross-sectional view of the -Y21 section is shown. The light-emitting device shown in FIG. 3(B) is a top-emitting device using a color-coded method. This is a mission-type light-emitting device.

[0057] The light-emitting device shown in FIG. 3(A1) includes a light-emitting portion 491, a driving circuit portion 493, and an FPC 495. The organic EL elements and transistors included in the light-emitting section 491 and the driving circuit section 493 are flexible. The substrate 420, the flexible substrate 428, the first bonding layer 407, and the second bonding layer 404 In FIG. 3B, the conductive layer 457 is sealed in the opening of the second bonding layer 404. 4 shows an example in which connector 497 is connected to

[0058] The light emitting device shown in FIG. 3B includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor, and a light emitting device. A resistor 455, an insulating layer 463, an insulating layer 465, an insulating layer 405, an organic EL element 450 (first The first electrode 401, the EL layer 402, and the second electrode 403, the second bonding layer 404, and the first bonding The flexible substrate 428 includes a first conductive layer 457, a second conductive layer 457, and a third conductive layer 457. The bonding layer 407 and the second electrode 403 transmit visible light.

[0059] In the light-emitting portion 491 of the light-emitting device shown in FIG. A transistor 455 and an organic EL element 450 are provided over a flexible substrate 420. The organic EL element 450 includes a first electrode 401 on an insulating layer 465 and an EL element 402 on the first electrode 401. The first electrode 401 is a transistor. The first electrode 40 is electrically connected to the source electrode or the drain electrode of the transistor 455. The first electrode 401 is preferably covered at its end with an insulating layer 405. is.

[0060] The driver circuit portion 493 includes a plurality of transistors. 1 shows one of the transistors included in the semiconductor memory device.

[0061] The conductive layer 457 is connected to an external input terminal for transmitting a signal or potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC495 is provided as the external input terminal.

[0062] In order to prevent an increase in the number of processes, the conductive layer 457 is formed of the same material as the electrodes and wiring used in the light-emitting section and the driving circuit section. It is preferable to form the conductive layer 457 in the same process using the same material. This shows an example in which the source electrode and drain electrode of the transistor 455 are fabricated using the same material and process.

[0063] The second bonding layer 404 has a higher gas barrier property than the first bonding layer 407. This can prevent moisture and oxygen from entering the light emitting device from the outside. Therefore, a light emitting device with high light emission properties can be realized.

[0064] In the second configuration example, the light emitted from the organic EL element 450 is taken out of the light emitting device via the first bonding layer 407. Therefore, the first bonding layer 407 has a higher light-transmitting property than the second bonding layer 404. In addition, the first bonding layer 407 has a refractive index higher than that of the second bonding layer 404. In addition, the first bonding layer 407 has a higher hardness than the second bonding layer 404. It is preferable that the volume shrinkage during heating is small.

[0065] <Configuration example 3> FIG. 3(A2) shows a plan view of the light emitting device, and FIG. 3(C) shows a dashed line X22 in FIG. The cross-sectional view between -Y22 is shown. The light-emitting device shown in FIG. 3(C) is a color filter type. It is a Tom emission type light emitting device.

[0066] The light emitting device shown in FIG. 3C includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a transistor, and a light emitting device. A resistor 454, a transistor 455, an insulating layer 463, a coloring layer 432, an insulating layer 465, and a conductive layer 435, insulating layer 467, insulating layer 405, organic EL element 450 (first electrode 401, EL layer 402, and a second electrode 403), a second bonding layer 404, a first bonding layer 407, a flexible The flexible substrate 420 includes a substrate 428 and a conductive layer 457. The flexible substrate 420 includes an adhesive layer 422 and an insulating layer 42 4. The insulating layer 463, the insulating layer 465, the insulating layer 467, and the first electrode 401 transmit visible light. do.

[0067] In the light-emitting portion 491 of the light-emitting device shown in FIG. A switching transistor 454 and a current control transistor are formed on the flexible substrate 420. The organic EL element 450 is provided between the insulating layer 46 and the insulating layer 455. 7, a first electrode 401 on the first electrode 401, an EL layer 402 on the EL layer 402, and a second electrode 403 on the EL layer 402. The first electrode 401 is connected to the transistor 4 via a conductive layer 435. The first electrode 401 is electrically connected to the source electrode or drain electrode of the first electrode 401. It is covered with an insulating layer 405. The second electrode 403 preferably reflects visible light. In addition, the light-emitting device has a colored layer 432 that overlaps the organic EL element 450 on the insulating layer 463 .

[0068] The driver circuit portion 493 includes a plurality of transistors. 1 shows one of the transistors included in the semiconductor memory device.

[0069] The conductive layer 457 is connected to an external input terminal for transmitting a signal or potential from the outside to the driver circuit portion 493. Here, an example is shown in which an FPC495 is provided as the external input terminal. Here, the conductive layer 457 is formed in the same layer as the source electrode and the drain electrode of the transistor 455. An example of fabrication using one material and one process is shown.

[0070] In FIG. 3C, a frame-shaped first bonding layer 407 is further provided on the outside of the frame-shaped second bonding layer 404. The conductive layer 457 and the connector 497 are connected to each other through the opening of the frame-shaped first bonding layer 407. The following example shows:

[0071] The second bonding layer 404 is located on the outer side of the second bonding layer 404 and has a lower gas barrier property than the second bonding layer 404. In the opening of the bonding layer 407 of the first embodiment, the connection portion between the FPC 495 and the connection body 497 and the connection body 49 In some cases, moisture may easily penetrate into the connection between the conductive layer 457 and the conductive layer 457. Between the connection part and the organic EL element 450, a second bonding layer 404 having high gas barrier properties is positioned. Therefore, impurities such as moisture can be prevented from entering the organic EL element 450, which is preferable.

[0072] The insulating layer 463 has an effect of suppressing diffusion of impurities into the semiconductor that constitutes the transistor. In addition, the insulating layers 465 and 467 reduce surface unevenness caused by transistors and wirings. It is preferable to select an insulating layer having a planarizing function for this purpose.

[0073] The second bonding layer 404 has a higher gas barrier property than the first bonding layer 407. This can prevent moisture and oxygen from entering the light emitting device from the outside. Therefore, a light emitting device with high light emission properties can be realized.

[0074] In the third configuration example, the first bonding layer 407 has a smaller volumetric shrinkage during hardening than the second bonding layer 404. It is preferable that is small.

[0075] In one embodiment of the present invention, an active element (non-linear element) is provided in a pixel. The active matrix method or the passive matrix method that does not have active elements in the pixels is used. It is possible.

[0076] In the active matrix method, various active elements, not just transistors, are used. Active elements can be used. For example, MIM (Metal Insulator Metal etal) or TFD (Thin Film Diode) can also be used. These elements have fewer manufacturing steps, which reduces manufacturing costs and improves yields. In addition, since these elements are small in size, the aperture ratio can be improved. This makes it possible to achieve low power consumption and high brightness.

[0077] The passive matrix method does not use active elements, so there are fewer manufacturing steps and manufacturing costs are lower. In addition, since no active elements are used, the aperture ratio can be reduced. It is possible to improve the light emission efficiency, thereby achieving lower power consumption or higher brightness.

[0078] <Configuration Example 4> FIG. 4(A) shows a plan view of the light emitting device, and FIG. 4(B) shows a cross-sectional view of the light emitting device along the dashed line X3-Y3 in FIG. The light emitting device shown in FIG. 4(A) and (B) is a bottom emission type light emitting device. It is located.

[0079] The light-emitting device shown in FIG. 4B includes a flexible substrate 419, an adhesive layer 422, an insulating layer 424, a conductive layer 406, a conductive layer 416, an insulating layer 405, an organic EL element 450 (first electrode 401, EL layer 402, and a second electrode 403), a second bonding layer 404, a first bonding layer 407, and a flexible The first electrode 401, the insulating layer 424, the adhesive layer 422, and the flexible substrate 428 are Plate 419 is transparent to visible light.

[0080] An organic EL element 450 is provided on the flexible substrate 419 via an adhesive layer 422 and an insulating layer 424. The flexible substrate 419, the second bonding layer 404, the first bonding layer 407, and the flexible The organic EL element 450 is sealed by the flexible substrate 428. , a first electrode 401, an EL layer 402 on the first electrode 401, and a second The second electrode 403 preferably reflects visible light.

[0081] The ends of the first electrode 401 , the conductive layer 406 , and the conductive layer 416 are covered with an insulating layer 405 . The conductive layer 406 is electrically connected to the first electrode 401, and the conductive layer 416 is electrically connected to the second electrode 403. The conductive layer 406 covered with the insulating layer 405 via the first electrode 401 is It functions as an auxiliary wiring and is electrically connected to the first electrode 401. By providing auxiliary wiring for electrical connection, the voltage drop caused by the resistance of the electrodes can be suppressed. The conductive layer 406 may be provided on the first electrode 401. An auxiliary wiring that is electrically connected to the second electrode 403 may be provided on the upper surface of the second electrode 405 or the like.

[0082] In order to increase the light extraction efficiency of the light-emitting device, a light extraction structure is provided on the side where light from the light-emitting element is extracted. In FIG. 4(B), the light-emitting element is located on the side where the light is extracted. An example in which the flexible substrate 419 also serves as a light extraction structure is shown.

[0083] The second bonding layer 404 has a higher gas barrier property than the first bonding layer 407. This can prevent moisture and oxygen from entering the light emitting device from the outside. Therefore, a light emitting device with high light emission properties can be realized.

[0084] In the fourth configuration example, the first bonding layer 407 has a smaller volumetric shrinkage during hardening than the second bonding layer 404. It is preferable that is small.

[0085] <Configuration Example 5> FIG. 5(A) shows a plan view of the light emitting device, and FIG. 5(B) shows a cross-sectional view of the light emitting device along the dashed line X4-Y4 in FIG. The light emitting device shown in FIG. 5(A) and (B) is a top emission type light emitting device. It is located.

[0086] The light-emitting device shown in FIG. 5B includes a flexible substrate 420, an adhesive layer 422, an insulating layer 424, a conductive layer 408, an insulating layer 405, an organic EL element 450 (a first electrode 401, an EL layer 402, and The second electrode 403, the conductive layer 410, the second bonding layer 404, the first bonding layer 407, the flexible substrate The second electrode 403, the first bonding layer 407, and the light extraction structure 409 are disposed on the substrate 401. , flexible substrate 428, and light extraction structures 409 are transparent to visible light.

[0087] An organic EL element 450 is provided on the flexible substrate 420 via an adhesive layer 422 and an insulating layer 424. The flexible substrate 420, the first bonding layer 407, and the flexible substrate 428 The organic EL element 450 is sealed. , an EL layer 402 on the first electrode 401, and a second electrode 403 on the EL layer 402. The first electrode 401 preferably reflects visible light. An extraction structure 409 is attached.

[0088] The ends of the first electrode 401 and the conductive layer 410 are covered with an insulating layer 405. It can be formed in the same process and with the same material as the first electrode 401, and is the same as the second electrode 403. Make an electrical connection.

[0089] The conductive layer 408 on the insulating layer 405 functions as an auxiliary wiring and is electrically connected to the second electrode 403. The conductive layer 408 may be provided on the second electrode 403. As in the case of 4, an auxiliary wiring electrically connected to the first electrode 401 may be provided.

[0090] The second bonding layer 404 has a higher gas barrier property than the first bonding layer 407. This makes it possible to prevent moisture and oxygen from entering the light emitting device through the side surface of the light emitting device. As a result, a highly reliable light emitting device can be realized.

[0091] In the configuration example 5, the light emitted from the organic EL element 450 is taken out of the light emitting device via the first bonding layer 407. Therefore, the first bonding layer 407 has a higher light-transmitting property than the second bonding layer 404. In addition, the first bonding layer 407 has a refractive index higher than that of the second bonding layer 404. In addition, the first bonding layer 407 has a higher hardness than the second bonding layer 404. It is preferable that the volume shrinkage during heating is small.

[0092] <Materials for the device> Next, an example of a material that can be used for the light emitting device will be shown.

[0093] [Flexible board] For the flexible substrate, a material having flexibility is used. For example, an organic resin or a material having a certain degree of flexibility is used. Furthermore, the substrate on the side from which light is extracted in the light-emitting device can be used. The plate is made of a material that transmits visible light. In the case where the flexible substrate does not need to transmit visible light, Alternatively, a metal substrate or the like can be used.

[0094] Since organic resin has a smaller specific gravity than glass, using organic resin as a flexible substrate This is preferable because it allows the light-emitting device to be made lighter than when glass is used.

[0095] As a material having flexibility and light transmission, for example, polyethylene terephthalate (PET) ), polyester resins such as polyethylene naphthalate (PEN), polyacrylonitrile Resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin , polyethersulfone (PES) resin, polyamide resin, cycloolefin resin, poly Examples include styrene resin, polyamide-imide resin, and polyvinyl chloride resin. It is preferable to use a material with a low modulus of elasticity, for example, polyamide-imide resin, polyimide resin, etc. The resin, PET, etc. can be preferably used. In addition, a substrate in which a fiber body is impregnated with a resin (preprint) can be used. The use of substrates with a reduced thermal expansion coefficient by mixing inorganic fillers with organic resins is also It is also possible.

[0096] When the fibrous body is contained in a material having flexibility and light transmission, the fibrous body is an organic compound or High-strength fibers made of inorganic compounds are used. Specifically, high-strength fibers have a tensile modulus or Young's modulus Representative examples are polyvinyl alcohol fibers and polyester fibers. fiber, polyamide fiber, polyethylene fiber, aramid fiber, polyparaphenylene Examples of the fiber include benzobisoxazole fiber, glass fiber, and carbon fiber. Examples of the glass fibers include those using E glass, S glass, D glass, Q glass, etc. These are used in the form of woven or nonwoven fabric, and the fibers are impregnated with resin and the resin is hardened to form a structure. A structure made of a fiber body and a resin may be used as the flexible substrate. The use of such a material is preferable because it improves reliability against breakage due to bending or localized pressure.

[0097] In order to improve the light extraction efficiency, it is preferable that the refractive index of the flexible and light-transmitting material is high. For example, by dispersing an inorganic filler having a high refractive index in an organic resin, the organic resin This allows the realization of a substrate with a higher refractive index than a substrate made of only SiO2. The use of such an inorganic filler is preferable since it does not impair optical transparency.

[0098] The thickness of the metal substrate is preferably 10 μm or more and 200 μm or less in order to obtain flexibility and bendability. The thickness is preferably 20 μm or more and 50 μm or less. Since the metal substrate has high thermal conductivity, The heat generated by the light emitting element when it emits light can be effectively dissipated.

[0099] The material constituting the metal substrate is not particularly limited, but examples thereof include aluminum, copper, and nickel. It is preferable to use metal alloys such as aluminum alloys and stainless steel. This can be done.

[0100] As for the flexible substrate, the layer using the above material is used as a hard cover to protect the surface of the device from scratches. A layer of a material capable of dispersing pressure (e.g., a layer of silicon nitride) or a layer of a material capable of dispersing pressure (e.g., a layer of aramid) In addition, the functional element (particularly the functional element 10) may be laminated with a layer of a functional material such as a resin layer. In order to prevent the deterioration of the lifespan of organic EL elements, an insulating layer with high gas barrier properties, which will be described later, is used. It may be provided.

[0101] The flexible substrate may be used by laminating a plurality of layers. This improves the barrier properties against water and oxygen, making it possible to provide a highly reliable light-emitting device. do.

[0102] For example, a flexible laminate in which a glass layer, an adhesive layer, and an organic resin layer are laminated from the side closest to the organic EL element is The thickness of the glass layer is 20 μm or more and 200 μm or less. The thickness is preferably 25 μm or more and 100 μm or less. A glass layer having such a thickness is resistant to water and oxygen. The organic resin layer can have a high barrier property against water and flexibility at the same time. The thickness is set to 10 μm or more and 200 μm or less, and preferably 20 μm or more and 50 μm or less. By providing the organic resin layer on the outer side of the glass layer, breakage or cracks in the glass layer are suppressed. The composite material of such glass material and organic resin can improve the mechanical strength. By applying this to the substrate, it is possible to create a highly reliable and flexible light-emitting device. can.

[0103] However, in one embodiment of the present invention, the first bonding layer is a bonding layer for bonding a pair of substrates together. One of the features is that the first bonding layer is surrounded by a second bonding layer that has a higher gas barrier property than the first bonding layer. Therefore, the substrate may be not only a flexible substrate, but also a non-flexible glass substrate or a reinforced glass substrate. In this case, the element may be formed directly on the substrate without using an adhesive layer. To realize a highly reliable light emitting device in which shrinkage of a light emitting portion is suppressed even in a case where the light emitting portion is exposed to a light source. can be done.

[0104] [Adhesive layer, bonding layer] The adhesive layer or bonding layer may be a photo-curable adhesive such as an ultraviolet-curable adhesive, a reaction-curable adhesive, or a heat-curable adhesive. Various curing adhesives such as adhesives, anaerobic adhesives, etc. can be used. Epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, Mido resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. In particular, gases such as epoxy resins Materials with high barrier properties are preferred. Two-part mixed resins may also be used. A card or the like may also be used.

[0105] The resin may contain a desiccant. For example, an oxide of an alkaline earth metal (oxide Use substances that adsorb moisture by chemical adsorption, such as calcium oxide or barium oxide. Alternatively, materials such as zeolite and silica gel can absorb moisture by physical adsorption. If a desiccant is included, impurities such as moisture may penetrate into the functional elements. This is preferable because it can suppress the intrusion of foreign matter and improve the reliability of the light emitting device.

[0106] In addition, by mixing a filler having a high refractive index or a light scattering material into the resin, it is possible to improve the light transmission efficiency. For example, titanium oxide, barium oxide, and zeolite can be used. For example, olyte, zirconium, etc. can be used.

[0107] [Insulation layer] The insulating layer 424 and the insulating layer 226 are preferably insulating layers with high gas barrier properties. In addition, an insulating layer with high gas barrier properties is formed between the first bonding layer 407 and the second electrode 403. It may be possible.

[0108] As an insulating layer with high gas barrier properties, a film made of nitrogen and silicon, such as a silicon nitride film or a silicon oxide nitride film, is used. Examples of the film include a film containing nitrogen and aluminum, such as an aluminum nitride film. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like may be used.

[0109] For example, the gas permeability, oxygen permeability, or water vapor permeability of an insulating layer with high gas barrier properties is 1 ×10 -5 [g / m 2 ·day] or less, preferably 1 × 10 -6 [g / m 2 ·day] or later or less, more preferably 1×10 -7 [g / m 2 ·day] or less, and more preferably 1×10 -8 [g / m 2 ·day] or less.

[0110] The inorganic insulating layers described above can also be used as other insulating layers.

[0111] The insulating layer 463 may be, for example, a silicon oxide film, a silicon oxynitride film, or an aluminum oxide film. In addition, an inorganic insulating layer such as a silicon film can be used as the insulating layer 465 or the insulating layer 467. For example, polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene Organic materials such as polyaniline resins can be used. Low-k materials, etc. In addition, by stacking a plurality of insulating layers, the insulating layer 465 and the insulating layer 4 67 may be formed.

[0112] The insulating layer 405 is formed using an organic insulating material or an inorganic insulating material. For example, polyimide resin, polyamide resin, acrylic resin, siloxane resin, epoxy Resin, phenolic resin, etc. can be used. In particular, photosensitive resin material is used to insulate the It is preferable to form the layer 405 so that the sidewall of the layer 405 is an inclined surface having a continuous curvature. I wish.

[0113] The method for forming the insulating layer 405 is not particularly limited, but may be a photolithography method, a sputtering method, or the like. Vapor deposition method, droplet ejection method (inkjet method, etc.), printing method (screen printing, offset printing etc.) can be used.

[0114] [Transistor] There is no particular limitation on the structure of a transistor used in a light-emitting device according to one embodiment of the present invention. The transistor may be a staggered type transistor or an inverted staggered type transistor. As either a top-gate or bottom-gate transistor structure, There is also no particular limitation on the material used for the transistor. For example, silicon A transistor using a silicon oxide semiconductor or germanium in a channel formation region is applied. The crystallinity of the semiconductor is not particularly limited, and it may be an amorphous semiconductor or a crystalline semiconductor. Any of the semiconductors that have a crystal region in part (microcrystalline semiconductors, polycrystalline semiconductors, and semiconductors that have a crystal region in part) When a semiconductor having crystallinity is used, the deterioration of the transistor characteristics is suppressed. The silicon is preferably amorphous silicon, single crystal silicon, or polycrystalline silicon. As the oxide semiconductor, In-Ga-Zn-O-based metal oxides can be used. It can be used.

[0115] In order to stabilize the characteristics of the transistor, it is preferable to provide an undercoat film. Inorganic films such as silicon oxide film, silicon nitride film, silicon oxynitride film, and silicon nitride oxide film The insulating layer can be formed as a single layer or a laminate. The base film can be formed by sputtering, It can be formed by using plasma CVD, coating, printing, etc. Note that a base film is not necessary. In each of the above-described configuration examples, the insulating layer 424 also serves as a base film for the transistor. It is possible.

[0116] [Organic EL element] The structure of the organic EL element used in the light-emitting device according to one embodiment of the present invention is not particularly limited. An organic EL element having a cushion structure may be used, or an organic EL element having a bottom emission structure may be used. Alternatively, an organic EL element having a dual emission structure may be used.

[0117] When a voltage higher than the threshold voltage of the organic EL element is applied between the pair of electrodes, the EL layer 402 becomes an anode. Holes are injected from the cathode side and electrons are injected from the cathode side. The injected electrons and holes are transported to the EL layer 4. The electrons recombine at 402, and the light-emitting material contained in the EL layer 402 emits light.

[0118] In an organic EL element, a conductive film that transmits visible light is used for the electrode from which light is extracted. In addition, it is preferable to use a conductive film that reflects visible light for the electrode on the side from which light is not extracted. .

[0119] The conductive film that transmits visible light is, for example, indium oxide, indium tin oxide (ITO). Indium Tin Oxide, Indium Zinc Oxide, Zinc Oxide, Gallium Doped It can be formed using zinc oxide, etc. Also, gold, silver, platinum, magnesium, Nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or Metallic materials such as titanium, alloys containing these metallic materials, or nitrides of these metallic materials (e.g. For example, titanium nitride or the like can be used by forming it thin enough to have light transmitting properties. A laminated film of the above materials can also be used as the conductive layer. For example, silver and magnesium It is preferable to use a laminated film of an alloy of this material and ITO, since the electrical conductivity can be increased. Graphene and the like may also be used.

[0120] The conductive film that reflects visible light is made of, for example, aluminum, gold, platinum, silver, nickel, tungsten, etc. Metallic materials such as zinc, chromium, molybdenum, iron, cobalt, copper, or palladium; An alloy containing these metal materials can be used. In addition, aluminum and titanium may be added. Aluminum alloys such as aluminum-nickel alloys, aluminum-neodymium alloys, etc. Alloys containing palladium (aluminum alloys), silver-copper alloys, silver-palladium-copper alloys, silver The electrode can be formed using an alloy containing silver, such as an alloy of silver and magnesium. Gold is preferred because of its high heat resistance. By laminating the oxide film, the oxidation of the aluminum alloy film can be suppressed. Examples of materials for the metal oxide film include titanium and titanium oxide. A conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a film made of silver and ITO may be laminated. A laminated film, a laminated film of an alloy of silver and magnesium and ITO, etc. can be used.

[0121] The electrodes may be formed by vapor deposition or sputtering. Formed using a discharge method such as the jet method, a printing method such as the screen printing method, or a plating method. It is possible.

[0122] The EL layer 402 has at least a light-emitting layer. The EL layer 402 has a positive electrode as a layer other than the light-emitting layer. Materials with high hole injection properties, materials with high hole transport properties, hole blocking materials, materials with high electron transport properties , a substance with high electron injection properties, or a bipolar substance (a substance with high electron transport properties and hole transport properties) The film may further include a layer containing a polymer (such as a polymeric material).

[0123] The EL layer 402 can be made of either a low molecular weight compound or a high molecular weight compound. The layers constituting the EL layer 402 may each be formed by deposition (vacuum deposition). The method may include a transfer method, a printing method, an ink-jet method, a coating method, etc. do.

[0124] In this embodiment, an organic EL element has been described as an example of a light-emitting element. The present invention is not limited to the above, and other display elements, light-emitting elements, semiconductor elements, and the like may be used. Regarding the bonding layer for bonding the pair of substrates, the first bonding layer is disposed closer to the gas barrier than the first bonding layer. One of the features of this method is that it is surrounded by a highly flexible second bonding layer. The elements to be sealed include display elements, light-emitting elements, and semiconductor elements.

[0125] For example, in this specification and the like, the term "display element," "display device having a display element," "light-emitting element," A light-emitting device, which is a device having a light-emitting element, can be used in various forms or in various Examples of a display element, a display device, a light-emitting element, or a light-emitting device include , EL elements (EL elements containing organic and inorganic materials, organic EL elements, inorganic EL elements), LED (white LED, red LED, green LED, blue LED, etc.), transistor (depending on current) transistors that emit light when exposed to light, electron emitters, liquid crystal elements, electronic ink, electrophoretic elements, grayscale Lighting Light Valve (GLV), Plasma Display Panel (PDP), MEMS (Microelectromechanical Systems), Digital Micromirror Devices ( DMD), DMS (Digital Micro Shutter), IMOD (Interference Lens) (electro-modulation) element, electrowetting element, piezoelectric ceramic display Rays, carbon nanotubes, etc., due to electromagnetic effects, contrast, brightness, reflectance Some display devices have a display medium whose transmittance changes. Examples of display devices using electron-emitting devices include EL displays. , Field Emission Display (FED) or SED type flat panel display ( SED:Surface-conduction Electron-emitter An example of a display device using liquid crystal elements is a liquid crystal display. Ray (transmissive LCD, semi-transmissive LCD, reflective LCD, Direct-view LCD, projection LCD, etc. Electronic ink or electrophoretic An example of a display device using moving elements is electronic paper.

[0126] [Coloring layer, light-shielding layer, and overcoat] The colored layer is a colored layer that transmits light in a specific wavelength band. For example, A red (R) color filter transmits light in the green wavelength range, and a green (G) color filter transmits light in the green wavelength range. Use a blue (B) color filter that transmits light in the blue wavelength range. Each color layer can be made of various materials using printing, inkjet printing, photolithography, etc. The electrodes are formed at desired positions by an etching method using a roughing method or the like.

[0127] The light-shielding layer is provided between adjacent colored layers. The light-shielding layer is configured to prevent light from entering the adjacent organic EL elements. The colored layer is then cut off to block light and suppress color mixing between adjacent organic EL elements. By providing the light shielding layer so as to overlap the light shielding layer, it is possible to suppress light leakage. For this purpose, a material that blocks light emitted from the organic EL element can be used. For example, a metal material or The black matrix may be formed using a resin material containing a pigment or a dye. If the light emitting element is provided in an area other than the light emitting element, such as the driving circuit, unintended light leakage due to guided light, etc. may occur. This is preferable because it can suppress the above.

[0128] In addition, an overcoat may be provided to cover the colored layer and the light-shielding layer. This makes it possible to prevent impurities contained in the colored layer from diffusing into the organic EL element. The overcoat is made of a material that transmits light emitted from the organic EL element, such as silicon nitride. Inorganic insulating layers such as silicon film and silicon oxide film, and organic insulating layers such as acrylic film and polyimide film Alternatively, a laminated structure of an organic insulating layer and an inorganic insulating layer may be used.

[0129] In addition, when the material of the first bonding layer 407 is applied onto the colored layer 432 and the light-shielding layer 431, The overcoat is made of a material that has high wettability with respect to the material of the first bonding layer 407. For example, an ITO film or the like is preferably used as the overcoat 453 (see FIG. 2(C)). It is preferable to use a metal film such as an oxide conductive film or an Ag film that is thin enough to transmit light. stomach.

[0130] [Conductive layer] Conductive material that functions as an electrode or wiring of a transistor, or an auxiliary electrode or auxiliary wiring of an organic electroluminescence element. The conductive layer may be made of, for example, molybdenum, titanium, chromium, tantalum, tungsten, or aluminum. Using metal materials such as copper, neodymium, scandium, etc., or alloy materials containing these elements, The conductive layer can be formed as a single layer or a laminate. The conductive metal oxide may be indium oxide (In 2 O 3 etc.), oxidation Tin (SnO 2 etc.), zinc oxide (ZnO), ITO, indium zinc oxide (In 2 O 3 -ZnO, etc.) or these metal oxide materials containing silicon oxide can be used. can.

[0131] The thickness of the auxiliary wiring can be set to 0.1 μm or more and 3 μm or less, and preferably 0. It is greater than .1 μm and less than 0.5 μm.

[0132] When paste (such as silver paste) is used as the material for the auxiliary wiring, the metal that constitutes the auxiliary wiring becomes granular. As a result, the surface of the auxiliary wiring becomes rough and has many gaps, and the EL layer It is difficult to completely cover the auxiliary wiring, and it is difficult to electrically connect the upper electrode and the auxiliary wiring. This becomes easier and more preferable.

[0133] [Light extraction structure] The light extraction structure includes a hemispherical lens, a microlens array, and a filter with a concave-convex structure. For example, the above-mentioned lens or film may be provided on a substrate. The substrate, lens or film is bonded to the substrate using an adhesive or the like having a refractive index similar to that of the substrate, lens or film. By bonding the light, a light extraction structure can be formed.

[0134] [Connector] The connector 497 is a paste or sheet made of a thermosetting resin mixed with metal particles. The metal particles can be of a material that exhibits anisotropic conductivity when bonded by heat. are particles that have layers of two or more metals, such as nickel particles coated with gold. It is preferable to use:

[0135] <Method 1 for making the device> In the following, we will discuss the top emission structure using the color filter method shown in Figures 2(A) and (B). An example of fabricating a light emitting device having the above structure (Configuration Example 1) will be described.

[0136] First, as shown in FIG. 6A, a release layer 203 is formed on a preparation substrate 201. A peeled layer 205 is formed on the substrate 3. Here, an example of forming an island-shaped peeled layer is shown. In addition, the peeled layer 205 may be formed in an island shape. When peeling the layer to be peeled off 205 from the substrate 201, the interface between the substrate 201 and the peeling layer 203, A material is selected so that peeling occurs at the interface between the layer 203 and the layer to be peeled 205 or in the peeling layer 203. In this embodiment, a case where peeling occurs at the interface between the layer to be peeled 205 and the peeling layer 203 is taken as an example. However, depending on the combination of materials used for the peeling layer 203 and the layer to be peeled 205, In addition, when the layer to be peeled 205 has a laminated structure, the layer in contact with the peeling layer 203 is This is referred to as the first layer.

[0137] For example, when the peeling layer 203 has a laminated structure of a tungsten film and a tungsten oxide film, Peeling occurs at the interface (or near the interface) between the tungsten film and the tungsten oxide film, A part of the peeling layer 203 (here, the tungsten oxide film) may remain on the peeled layer 205 side. The peeling layer 203 remaining on the layer to be peeled 205 side may be removed thereafter.

[0138] The substrate 201 to be prepared is a substrate having at least heat resistance capable of withstanding the processing temperature during the preparation process. The substrate 201 used for preparation may be, for example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, or the like. It is possible to use solid substrates, ceramic substrates, metal substrates, resin substrates, plastic substrates, etc. Cut.

[0139] In order to improve mass productivity, a large glass substrate may be used as the substrate 201. For example, 3rd generation (550mm x 650mm), 3.5th generation (600mm x 720mm, or 620mm x 750mm), 4th generation (680mm x 880mm, or or 730mm x 920mm), 5th generation (1100mm x 1300mm), 6th generation ( 1500mm x 1850mm), 7th generation (1870mm x 2200mm), 8th generation ( 2200mm x 2400mm, 9th generation (2400mm x 2800mm, 2450mm) 10th generation (2950mm x 3400mm) glass substrates, A larger glass substrate can be used.

[0140] When a glass substrate is used as the preparation substrate 201, a lower layer is provided between the preparation substrate 201 and the peeling layer 203. As the base film, silicon oxide film, silicon oxynitride film, silicon nitride film, silicon nitride oxide film Forming an insulating layer such as a film is preferable because it can prevent contamination from the glass substrate.

[0141] The release layer 203 may be made of tungsten, molybdenum, titanium, tantalum, niobium, nickel, or copper. Barium, Zirconium, Zinc, Ruthenium, Rhodium, Palladium, Osmium, Iridium An element selected from aluminum and silicon, an alloy material containing the element, or a compound material containing the element. The crystal structure of the silicon-containing layer may be amorphous, microcrystalline, or polycrystalline. Also, aluminum oxide, gallium oxide, zinc oxide, titanium dioxide, oxide Indium, indium tin oxide, indium zinc oxide, In-Ga-Zn oxide, etc. The peeling layer 203 may be made of a metal oxide such as tungsten, titanium, or molybdenum. The use of such a high melting point metal material is preferable because it increases the degree of freedom in the process of forming the peeled layer 205. .

[0142] The peeling layer 203 is formed by, for example, a sputtering method, a plasma CVD method, a coating method (spin coating), etc. The peeling layer 2 can be formed by a method such as a printing method, a droplet ejection method, a dispensing method, etc. The thickness of the film 03 is, for example, 10 nm or more and 200 nm or less, preferably 20 nm or more and 100 nm or less. Below.

[0143] When the peeling layer 203 has a single-layer structure, it is preferably a tungsten layer, a molybdenum layer, or a combination of tungsten and molybdenum. It is preferable to form a layer containing a mixture of tungsten and borane. a layer containing an oxide or oxynitride of molybdenum, a layer containing an oxide or oxynitride of molybdenum, or a layer containing tungsten A layer containing an oxide or oxynitride of a mixture of stainless steel and molybdenum may be formed. A mixture of tungsten and molybdenum is, for example, an alloy of tungsten and molybdenum. is equivalent to.

[0144] The peeling layer 203 may be a multilayer of a layer containing tungsten and a layer containing an oxide of tungsten. When forming a layered structure, a layer containing tungsten is formed, and an upper layer made of oxide is formed. By forming an insulating layer, tungsten oxide is formed at the interface between the tungsten layer and the insulating layer. In addition, the surface of the layer containing tungsten may be treated with a thermal acid. Chemical treatment, oxygen plasma treatment, nitrous oxide (N 2 O) Oxidation power of plasma treatment, ozone water, etc. A layer containing tungsten oxide may be formed by treatment with a strong solution or the like. Zuma treatment and heat treatment can be performed using oxygen, nitrogen, or nitrous oxide alone or in combination with other gases. The above-mentioned plasma treatment or heat treatment may be performed under a mixed gas atmosphere. By changing the surface condition of the layer, the adhesion between the peeling layer 203 and the insulating layer to be formed later can be controlled. It is possible to do so.

[0145] Note that when separation is possible at the interface between the formation substrate and the layer to be peeled off, a peeling layer does not have to be provided. For example, glass is used as the substrate, and polyimide, polyester, or polyimide is placed in contact with the glass. Forming organic resins such as olefin, polyamide, polycarbonate, or acrylic, An insulating film, transistors, etc. are formed on the resin. In this case, the organic resin is etched by laser light, etc. By locally heating the substrate, it is possible to peel off the substrate at the interface with the organic resin. Alternatively, a metal layer is provided between the substrate and the organic resin, and a current is passed through the metal layer to form the metal layer. The metal layer may be heated to separate the organic resin from the metal layer at the interface therebetween. It can be used as a substrate for the organic resin. It can also be used to bond organic resin to other substrates with adhesive. This is also fine.

[0146] There is no particular limitation on the layer formed as the peeled layer 205. In order to manufacture a light-emitting device, first, an insulating layer 424, a transistor 455, an insulating layer 463, and an insulating film 464 are formed. The edge layer 465 is formed in this order. Then, openings are made in parts of the insulating layer 463 and the insulating layer 465. A first electrode 401 is formed to be electrically connected to a source electrode or a drain electrode of a transistor. The source and drain electrodes of the transistor are formed in the same process and with the same materials. A conductive layer 457 is also formed.

[0147] The insulating layer 424 is a silicon nitride film, a silicon oxynitride film, a silicon oxide film, or a nitride oxide film. It is preferable to form the insulating film in a single layer or multiple layers using a silicon film or the like.

[0148] The insulating layer is formed by using a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the film formation temperature can be increased to 250°C or higher, up to 400°C, using the plasma CVD method. By forming the film as described below, it is possible to obtain a dense film with extremely high gas barrier properties. The thickness of the insulating layer is 10 nm to 3000 nm, and further 200 nm to 1500 nm. m or less is preferable.

[0149] Then, an insulating layer 405 is formed to cover the end of the first electrode 401. An EL layer 402 is formed on the first and insulating layers 405, and a second electrode 403 is formed on the EL layer 402. Here, the layers from the insulating layer 424 to the second electrode 403 correspond to the layer to be peeled 205.

[0150] As shown in FIG. 6B, a peeling layer 223 and a peeled layer 225 are formed on a preparation substrate 221. Here, the insulating layer 226 is formed on the peeling layer 223 as the layer to be peeled 225. A light-shielding layer 431 and a coloring layer 432 are formed on the insulating layer 226. An overcoat 453 is formed on the color layer 432 .

[0151] Next, the preparation substrate 201 and the preparation substrate 221 are placed so that the surfaces on which the peeled layers are formed face each other. The first bonding layer 407 and the second bonding layer 404 are bonded together so that the first bonding layer The bonding layer 407 and the second bonding layer 404 are hardened (FIG. 6(C)). 25, a frame-shaped second bonding layer 404 and a first bonding layer 405 on the inner side of the frame-shaped second bonding layer 404. After providing 407, the preparation substrate 201 and the preparation substrate 221 are placed opposite each other and bonded together.

[0152] The method for hardening the first bonding layer 407 and the second bonding layer 404 depends on the material used for each layer. Depending on the material, it may be cured at room temperature, or by heating or exposure to light. stomach.

[0153] If the layer to be peeled off is made of a material with low heat resistance, heat it below the temperature that the material can withstand. For example, in the present embodiment, since the peeled layer includes an organic EL element, When a thermosetting resin is used as the material for the bonding layer, it is preferable to heat the bonding layer at a temperature of 80° C. or less. I wish.

[0154] In addition, when a photocurable resin is used as the material of the bonding layer, the preparation substrate 201 and the peeling layer 203 , and the peeled layer 205, or the formation substrate 221, the peeling layer 223, and the peeled layer 225, A material that transmits light to harden the photocurable resin is used. At this time, the transmittance of the light in each layer is The rate should be greater than 0%, preferably greater than 1%, and the higher the better.

[0155] A specific example of a method for hardening the first bonding layer 407 and the second bonding layer 404 is described in the second embodiment. He explains.

[0156] The bonding of the preparation substrate 201 and the preparation substrate 221 is preferably performed under a reduced pressure atmosphere. stomach.

[0157] Here, as shown in FIG. 23A, the first bonding layer 407 formed on the peeled layer 225 The first and second bonding layers 401 and 404 may not be in contact with each other. When the layers are joined together, one or both of the first bonding layer 407 and the second bonding layer 404 are crushed. 6(C) or 11(A) in the state shown in FIG. One or both of the bonding layers 404 may be deformed.

[0158] In addition, when the preparation substrate 201 and the preparation substrate 221 are bonded to each other, the first bonding layer 407 and the second bonding layer 408 are bonded to each other. Air bubbles may remain between the bonding layers 404. The area containing the air bubbles has a weak mechanical strength. Therefore, as shown in Figure 23(B) and (C), In this way, a portion not having the second bonding layer 404 is provided near the corner of the substrate, and the air bubbles are prevented from forming the second bonding layer 404. The substrate 201 and the substrate 22 may be arranged so that the substrate 201 and the substrate 22 can be easily removed. The shapes of the first bonding layer 407 and the second bonding layer 404 after bonding the first and second bonding layers 407 and 404 are shown in FIG. As shown in FIG. 23(D), the second bonding layer 404 may not be connected to one another. Good too.

[0159] For example, as shown in FIG. 24A, the first bonding layer 407 and the second bonding layer 404 are peeled off. The substrate 201 and the substrate 221 are then bonded to each other by a bonding method. Then, as shown in FIG. 24(B), the second bonding layer 404 The first bonding layer 4 is compressed and spreads in the lateral direction of the paper. If there is a difference in the film thickness (length in the vertical direction of the paper surface) between the first bonding layer 407 and the second bonding layer 404, the point in FIG. There may be a step as shown in the area circled in line.

[0160] Further, as shown in FIG. 24B, between the first bonding layer 407 and the second bonding layer 404, In the case of a hollow region where the pressure is reduced, the substrates are bonded together under a reduced pressure. By exposing the optical device to atmospheric pressure, either the first bonding layer 407 or the second bonding layer 404 is For example, as shown in FIG. 24(C), the first The second bonding layer 407 spreads and the thickness of the first bonding layer 407 becomes smaller, so that the first The difference in thickness between the bonding layer 407 and the second bonding layer 404 may become large, resulting in a large step.

[0161] Therefore, in the light-emitting device according to one embodiment of the present invention, the thickness of the film near the end and the thickness of the film in the center inside the end are For example, as shown in FIG. 24(C), The thickness of the film near the edge may be thicker than that of the center, or may be thinner as shown in FIG. Good too.

[0162] In addition, in the light emitting device during or after manufacture, in the area where there is a difference in thickness (step), The layers that make up the layers are prone to peeling, which reduces the yield and reduces the reliability of the device. In addition, if there is a difference in the thickness of the light-emitting device in the light-emitting region, interference may occur. This may result in reduced display quality, such as stripes.

[0163] Therefore, in the light-emitting device according to one embodiment of the present invention, the thickness of the light-emitting portion near the end and the thickness of the light-emitting portion inside the end are It is preferable that the thickness of the light emitting portion near the edge and the thickness of the central portion near the edge are approximately equal. The thickness of the light emitting portion may be different from the thickness of the film near the end of the light emitting device, which is located outside the end of the light emitting portion. In addition, in the light-emitting device according to one embodiment of the present invention, the distance from the interference fringes to the end of the light-emitting device is short. It is preferable to set the distance within 30 mm, 20 mm, 10 mm, etc. By shortening the distance from the substrate to the edge of the light emitting device, it can be used as a light emitting region in the light emitting device. This is preferable because it can broaden the range in which it is possible to carry out the above-mentioned operations.

[0164] Furthermore, in the light-emitting device according to one embodiment of the present invention, the thickness of the film near the end and the thickness of the film in the center inside the end are The film thickness (for example, the film thickness at the center of the light-emitting part and the film thickness near the edge of the light-emitting part) is approximately equal. is preferred.

[0165] Specifically, the film thickness, material, amount of application, etc. of the first bonding layer 407 and the second bonding layer 404 are appropriately determined. By determining the thickness of the first bonding layer 407 and the second bonding layer 404, the light emitting device This can suppress the occurrence of differences in thickness between the positions.

[0166] FIG. 6C shows a case where the size of the peeling layer 203 and the size of the peeling layer 223 are the same. Release layers of different sizes may be used, as shown in FIG. 6(D).

[0167] The first bonding layer 407 and the second bonding layer 404 are the peeling layer 203, the layer to be peeled 205, and the layer to be peeled. The second bonding layer 404 is disposed so as to overlap the first bonding layer 225 and the peeling layer 223. is located closer to the edge of at least one of the peeling layers 203 and 223 (the layer to be peeled off first). It is preferable that the substrate 201 and the substrate 221 are located on the inner side. This makes the substrate 201 and the substrate 221 tightly adhere to each other. This can prevent adhesion and can prevent a decrease in the yield in the subsequent peeling step.

[0168] Here, the fluidity of the material of the second bonding layer 404 before hardening is greater than the fluidity of the material of the first bonding layer 407 before hardening. The fluidity of the first bonding layer 404 is preferably lower than that of the first bonding layer 404 before and after the curing. By filling the first bonding layer 407, the first bonding layer 407 and the second bonding layer 404 are peeled off. This can prevent the layer 203 from spreading outside and further reduce the yield of the peeling process. .

[0169] The order of forming the first bonding layer 407 and the second bonding layer 404 does not matter. After forming the first bonding layer 407 by using a printing method or the like, the second bonding layer 40 is formed by using a coating method or the like. Alternatively, after forming the second bonding layer 404 by coating or the like, the OD The first bonding layer 407 is formed using a one drop fill (F) type device or the like. Good too.

[0170] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 7(A) and (B)).

[0171] The laser beam is incident on the second bonding layer 404 in a cured state, the layer to be peeled 205, and the peeling layer 203, which are overlapped with each other. The area is irradiated (see arrow P1 in FIG. 7(A)).

[0172] At least the first layer (a layer included in the layer to be peeled 205 and in contact with the peeling layer 203) has a crack. By inserting a film (causing a crack or a fracture) a part of the first layer is removed, and the starting point of peeling is created. (See the area surrounded by the dotted line in FIG. 7(B)). At this time, not only the first layer but also the Layers other than the release layer 205, the release layer 203, and parts of the second bonding layer 404 may be removed. By irradiating the film with laser light, a portion of the film can be melted, evaporated, or thermally destroyed.

[0173] The laser light may be irradiated from either substrate side. It is preferable to irradiate the peeling layer 203 and the peeling layer 223 from the side of the peeling layer 203. When irradiating, the layer to be peeled 205 and the layer to be peeled 225 are irradiated with the laser beam. By inserting the adhesive, the formation substrate 201 and the peeling layer 203 can be selectively peeled off. The substrate on the side irradiated with the laser light is made of a material that transmits the laser light.

[0174] An enlarged view of the area E surrounded by the dashed line in FIG. 11(A) is shown in FIG. 11(B-1) to (B-4). In each enlarged view, an area 215 irradiated with laser light is illustrated.

[0175] During the peeling process, the force that pulls the peeled layer 205 and the peeling layer 203 apart is concentrated at the starting point of peeling. Therefore, the starting point of peeling is located near the end portion of the second bonding layer 404 in a cured state rather than the center portion. In particular, peeling is more likely to occur near the corners than near the sides, even in the vicinity of the edges. It is preferable to form the starting point of the above.

[0176] For example, as shown in FIG. 11(B-1) to (B-3), the second bonding layer 404 in a cured state and The laser light irradiation region 215 may be located in the region overlapping with the peeling layer 203. As shown in FIG. 1(B-4), the laser light may be irradiated to the side of the second bonding layer 404. In the embodiment, the laser beam is irradiated to a region where the second bonding layer 404 in a cured state and the peeling layer 203 overlap each other. This is one of the styles.

[0177] As shown in FIGS. 11(B-1), (B-3), and (B-4), the second bonding layer 404 By intermittently irradiating the edge with laser light, the starting point of peeling is formed in a broken line, and the peeling This is preferable because it is easy to

[0178] In addition, a continuous or discontinuous layer is formed in the region where the hardened second bonding layer 404 and the peeling layer 203 overlap. By continuously irradiating the laser beam, the starting points of the peeling in a solid or dashed line are formed in a frame shape. Good too.

[0179] There is no particular limitation on the laser used to form the starting point of the peeling. For example, a continuous wave laser Laser light irradiation conditions (frequency, power) can be adjusted. -density, energy density, beam profile, etc.) are determined based on the thickness of the substrate and the peeling layer, material, etc. The above should be taken into consideration and appropriately controlled.

[0180] Then, the layer to be peeled 205 and the preparation substrate 201 are separated from each other from the formed peel starting point (FIG. 7). As a result, the layer to be peeled 205 is transferred from the production substrate 201 to the production substrate 221. It can be transposed.

[0181] At this time, it is preferable to fix one of the substrates to a suction stage or the like. For example, The layer 205 to be peeled off may be peeled off from the substrate 201 by fixing the substrate 201 to an adsorption stage. In addition, the production substrate 221 is fixed to a suction stage, and the production substrate 201 is peeled off from the production substrate 221. You may do so.

[0182] For example, from the starting point of peeling, physical force (pulling by hand or a jig, or using a roller) The layer to be peeled 205 and the substrate 201 are separated by a process such as rotating the substrate to separate the layer. That's good.

[0183] In addition, a liquid such as water is allowed to penetrate into the interface between the peeling layer 203 and the layer to be peeled 205 to form the fabricated substrate 20 The liquid may flow through the peeling layer 203 and the peeled layer 205 by capillary action. By penetrating between the layers 205, it can be easily separated. Electricity may adversely affect the functional elements contained in the peeled layer 205 (semiconductor elements may be damaged by static electricity) This can prevent damage to the equipment (e.g. destruction by fire).

[0184] Next, the peeled layer 205 peeled off from the fabricated substrate 201 and the flexible substrate 420 are bonded to the adhesive layer 42. 2 and then the adhesive layer 422 is cured (FIG. 8(A)).

[0185] Next, a sharp blade such as a cutter is used to create the starting point for peeling (Figure 8 (B) and (C)). .

[0186] If the side of the flexible substrate 420 on which the peeling layer 223 is not provided can be cut with a blade or the like, The flexible substrate 420, the adhesive layer 422, and the peeled layer 225 may be cut (FIG. 8(B) ) (see arrow P2 in Fig. 1). This allows a part of the first layer to be removed, forming a starting point for peeling ( See the area surrounded by the dotted line in Figure 8(C).

[0187] Here, a frame-shaped cut is made in the area where the hardened second bonding layer 404 and the peeling layer 223 overlap. In the example shown, the peeling starting point is formed in a solid line by inserting a notch, but the present invention is not limited to this. The release layer 223 may also be cut.

[0188] As shown in FIGS. 8B and 8C, the formation substrate 221 and the flexible substrate 222 are not overlapped with the peeling layer 223. When the conductive substrate 420 is bonded to the fabrication substrate 22 by the adhesive layer 422, Depending on the degree of adhesion between the flexible substrate 420 and the substrate 1, the yield of the subsequent peeling process may decrease. Therefore, a frame-shaped cut is made in the area where the hardened adhesive layer 422 and the peeling layer 223 overlap. It is preferable to form the peeling starting point in a solid line by inserting a groove in the peeling process. It can increase retention.

[0189] Then, the layer to be peeled 225 and the preparation substrate 221 are separated from each other from the formed peeling starting point (FIG. 8). As a result, the peeled layer 225 is transferred from the preparation substrate 221 to the flexible substrate 420. It is possible.

[0190] Then, the conductive layer 457 is exposed, and the insulating layer 226 and the flexible substrate 428 are bonded to each other by an adhesive layer. 426 and a step of laminating the substrate 102. Either step may be performed first.

[0191] The method of removing the layer overlapping the conductive layer 457 to expose the conductive layer 457 is not limited. For example, the insulating layer 226 may be damaged by a blade such as a needle or a cutter, or by irradiating it with laser light. A part of the insulating layer 226 is removed, and the removed part is overlapped with the conductive layer 457. For example, a sticky roller may be pressed against the insulating layer 226 and the roller Alternatively, adhesive tape is attached to the insulating layer 226. It can be attached and removed.

[0192] Note that openings were provided in advance in the insulating layers 463 and 465 in regions overlapping with the conductive layer 457. In the opening, an EL layer is formed by the same process and with the same material as the EL layer 402, and a second electrode The conductive layer may be formed in the same process and with the same material as in 403. Adhesion between the EL layer and the conductive layer In addition, the adhesion between the layers constituting the EL layer is low, so the interface between the EL layer and the conductive layer, or the EL layer This causes separation in the insulating layer 226, the bonding layer, the EL layer, or the conductive layer 4 of the conductive layer. The region overlapping with the conductive layer 457 can be selectively removed. If any remains, it may be removed with an organic solvent or the like.

[0193] In the above-described method for manufacturing a light-emitting device according to one embodiment of the present invention, laser irradiation or a sharp blade or the like is not performed. The peeling starting point is formed by the above, and the peeling layer and the layer to be peeled are made in a state where they can be easily peeled off, and then the peeling is performed. This makes it possible to improve the yield of the peeling process.

[0194] In addition, in this manufacturing method, a pair of substrates each having a peeled layer formed thereon is previously bonded to each other. After the alignment, the flexible substrate can be attached by peeling. When bonding layers together, substrates with low flexibility can be bonded together, resulting in a flexible The alignment accuracy of the bonding can be improved compared to when substrates are bonded together. Therefore, the alignment of the organic EL element and the color filter can be performed with high accuracy. It can be said that this is a manufacturing method.

[0195] In addition, peeling starts in the region where the hardened second bonding layer 404 and the peeling layer overlap. The delamination can be doubly sealed with a first adhesive layer 407 and a second adhesive layer 404. This prevents the organic EL element from deteriorating due to moisture or oxygen, resulting in highly reliable light emission. You can create devices.

[0196] In addition, FIG. 8D shows a state in which the end portion of the second bonding layer 404 is covered with the adhesive layer 422. However, the light-emitting device of one embodiment of the present invention is not limited to this. In the case where the temperature is high, the end of the second bonding layer 404 is covered with the adhesive layer 422. This is preferable because it is possible to prevent impurities from entering the light emitting device. By doing so, the second bonding layer 404 may be exposed on the side surface of the light emitting device. The non-light-emitting area of ​​the optical device can be narrowed (the frame can be narrowed). Since a layer with high gas barrier properties is used for the layer 404, the second bonding layer 404 is attached to the side of the light emitting device. Even if exposed, deterioration in the reliability of the light emitting device can be suppressed.

[0197] <Method 2 for making the device> The device fabrication method 2 is performed in the same manner as the device fabrication method 1 up to the first peeling step. Next, the steps after FIG. 7(D) will be described in detail.

[0198] The layer to be peeled 205 separated from the preparation substrate 201 and the flexible substrate 231 are bonded to the third bonding layer 2 The third bonding layer 233 and the fourth bonding layer 235 are used to bond the substrate 1 to the substrate 1. 235 is hardened (FIG. 9(A)). In this step, a frame-shaped fourth bonding layer is formed on the peeled layer 225. 235 and a third bonding layer 233 on the inner side of the fourth bonding layer 235, and the peeled layer 225 and flexible substrate 231 are bonded together.

[0199] The layer to be peeled 205 and the flexible substrate 231 are preferably bonded together under a reduced pressure atmosphere. It is nice.

[0200] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 9(B) and (C)).

[0201] Here, the fourth bonding layer 235 in a hardened state is irradiated with laser light (arrow P3 in FIG. 9(B)). By removing a part of the first layer, a starting point for peeling can be formed (dotted line in FIG. 9(C)). At this time, not only the first layer but also other layers of the peeled layer 225 and the peeled layer Layer 223 and portions of fourth bonding layer 235 may be removed.

[0202] It is preferable that the laser light be irradiated from the formation substrate 221 side on which the peeling layer 223 is provided.

[0203] Then, the layer to be peeled 225 and the preparation substrate 221 are separated from each other from the formed peeling starting point (FIG. 9). As a result, the layer to be peeled 205 and the layer to be peeled 225 are transferred to the flexible substrate 231. It is possible.

[0204] Then, the conductive layer 457 is exposed, and the insulating layer 226 and the flexible substrate 428 are bonded to each other by an adhesive layer. 426 and a step of laminating the substrate 102. Either step may be performed first.

[0205] In the above-described method for manufacturing a light-emitting device according to one embodiment of the present invention, a peeling layer and a layer to be peeled are After bonding the pair of substrates, a starting point for peeling is formed by irradiating the substrate with laser light. The peeling process is performed after each of the peeling layers and the layer to be peeled is made to be in a state where they can be easily peeled from each other. This can improve the yield of the peeling process.

[0206] In addition, a pair of substrates each having a peeled layer formed thereon are bonded together in advance, and then peeled. The substrate that constitutes the device to be manufactured can be bonded to the substrate. When laminating the delamination, it is possible to bond the less flexible substrates together, and the flexibility This improves the alignment accuracy of the bonding compared to when bonding two substrates together. Cut.

[0207] In addition, peeling starts in the region where the hardened second bonding layer 404 and the peeling layer overlap. The delamination can be doubly sealed with a first adhesive layer 407 and a second adhesive layer 404. This prevents the organic EL element from deteriorating due to moisture or oxygen, resulting in highly reliable light emission. You can create devices.

[0208] In the configuration shown in FIG. 9D, the organic EL element 450 is The layer 404, the third bonding layer 233, and the fourth bonding layer 235 are used to seal the semiconductor device. Therefore, impurities can be prevented from entering the light-emitting device. The structure is not limited to this. By cutting the edge of the light emitting device, the third bonding layer 233 and At least a portion of the fourth bonding layer 235 is removed, and the second bonding layer 404 is attached to the side of the light emitting device. This allows the non-light-emitting area of ​​the light-emitting device to be narrowed (a narrow frame can be achieved). In one embodiment of the present invention, a layer having a high gas barrier property is used for the second bonding layer 404. Even if the second bonding layer 404 is exposed to the side surface of the device, a decrease in the reliability of the light emitting device can be suppressed.

[0209] <Method 3 for preparing the device> In the following, we will explain the top emission structure using the color-coded method shown in Figures 3(A) and (B). An example of fabricating an optical device (configuration example 2 above) will be described.

[0210] In addition, by changing the composition of the peeled layer, the above composition examples 3 to 5 can also be produced in the same manner. .

[0211] First, as shown in FIG. 10(A), a release layer 203 is formed on a preparation substrate 201. The layer to be peeled 205 is formed on the substrate 03. The layer to be peeled 205 is formed in the same manner as in the device manufacturing method 1. However, since a color-by-color method is used here, the organic EL element 450 is active. At least a part of the EL layer 402 is divided for each pixel.

[0212] Next, the preparation substrate 201 and the flexible substrate 428 are bonded to each other by the first bonding layer 407 and the second bonding layer 408. 04, and the first bonding layer 407 and the second bonding layer 404 are cured (FIG. 10(B)). In this example, a frame-shaped second bonding layer 404 and a frame-shaped first bonding layer 405 are formed on a flexible substrate 428. After providing the first bonding layer 407 on the inner side of the second bonding layer 404, the preparation substrate 201 and the flexible substrate The plate 428 is placed opposite to the plate 425 and bonded together.

[0213] The bonding of the preparation substrate 201 and the flexible substrate 428 is preferably performed under a reduced pressure atmosphere. It is nice.

[0214] Here, the first bonding layer 407 and the second bonding layer 404 are the peeling layer 203 and the layer to be peeled 205. Then, as shown in FIG. 10B, the edge of the second bonding layer 404 is It is preferable that the portion is not located outside the edge of the peeling layer 203. If the second bonding layer 404 has a region that does not overlap with the peeling layer 203, the size of the region and the Depending on the degree of adhesion with the adjacent layer, peeling failure may occur. The second bonding layer 404 is located inside the peeling layer 203, or the second bonding layer 404 It is preferable that the end of the film 202 and the end of the release layer 203 are aligned.

[0215] As shown in FIG. 11C, the first bonding layer 407 and the second bonding layer 404 are 11C is a plan view of the flexible substrate 428. 1 and a cross-sectional view taken along dashed line A1-A2 in the plan view. 8 is not shown). By providing the resin layer 213, even if it is exposed to the air during the manufacturing process, In this way, impurities such as moisture can be prevented from being mixed into the layer 205 to be peeled off.

[0216] In addition, when the resin layer 213 is in a hardened state, the adhesion between the preparation substrate 201 and the flexible substrate 428 is improved. Depending on the degree of the resin layer 21, the yield in the subsequent peeling step may decrease. It is preferable that at least a part of the resin layer 213 is in a semi-cured or uncured state. By using a highly viscous material, moisture in the air can be absorbed even in a semi-cured or uncured state. Therefore, the effect of suppressing impurities such as those mentioned above from being mixed into the layer to be peeled 205 can be improved.

[0217] In addition, for example, a photocurable resin is used as the resin layer 213, and the resin is cured by irradiating a part of the resin layer with light. A part of the oil layer 213 may be in a hardened state. By hardening a part of the oil layer 213, the amount of the oil layer 213 is reduced during the process. Even when the pressure atmosphere is changed from the pressure atmosphere to the atmospheric pressure atmosphere, the preparation substrate 201 and the flexible substrate 428 This is preferable because the distance and position can be kept constant. In addition, it is preferable to form the resin layer 213.

[0218] Next, a starting point for peeling is formed by irradiation with laser light (FIGS. 10(B) and (C)).

[0219] The laser beam is incident on the second bonding layer 404 in a cured state, the layer to be peeled 205, and the peeling layer 203, which are overlapped with each other. The area is irradiated (see arrow P4 in FIG. 10(B)).

[0220] By removing a part of the first layer, a starting point for peeling can be formed (encircled by a dotted line in FIG. 10(C)). At this time, not only the first layer but also other layers of the layer to be peeled 205 and the peeling layer 20 3. A portion of the second bonding layer 404 may be removed.

[0221] The laser light may be irradiated from either substrate side, but the scattered light may not be incident on the organic EL element, etc. In order to prevent the above-mentioned problem, irradiation is performed from the side of the fabrication substrate 201 on which the peeling layer 203 is provided. is preferred.

[0222] Then, the layer to be peeled 205 and the preparation substrate 201 are separated from each other from the formed peeling starting point (FIG. 1 0(D)). This transfers the peeled layer 205 from the production substrate 201 to the flexible substrate 428. It is possible.

[0223] In the above-described method for manufacturing a light-emitting device according to one embodiment of the present invention, peeling may occur due to laser light irradiation. The peeling is performed after forming the points to make the peeling layer 203 and the peeled layer 205 in a state where they can be easily peeled from each other. This can improve the yield of the peeling process.

[0224] In the above, the starting point of the peeling is formed using a laser beam, but the flexible substrate 428 is cut. When the flexible substrate 428, the second bonding layer 404, and the substrate 426 can be cut with a sharp blade such as a knife, The release layer 205 may be scored, which removes a portion of the first layer and facilitates release. It can form a starting point.

[0225] Thereafter, the conductive layer 457 is exposed, and the peeled layer 205 and the flexible substrate 420 are bonded to each other. and a step of laminating the same using layer 422. Either step may be performed first.

[0226] In addition, peeling starts in the region where the hardened second bonding layer 404 and the peeling layer 203 overlap. The layer to be peeled 205 can be doubly sealed with the first bonding layer 407 and the second bonding layer 404. Therefore, it is possible to suppress the deterioration of the organic EL element due to moisture and oxygen, and to improve reliability. It is possible to manufacture a highly efficient light-emitting device.

[0227] As described above, the edge of the region that can be peeled and displaced is inside the edge of the peeling layer 203. As shown in FIG. 12(A) to (C), the end of the layer to be peeled 205 is located on the peeling layer 2. When there are multiple layers 205 to be peeled, In this case, as shown in FIG. 12(B), a peeling layer 203 may be provided for each peeled layer 205. As shown in FIG. 12C, a plurality of layers to be peeled 205 may be provided on one peeling layer 203. stomach.

[0228] An example of how to prepare a flexible sample by peeling and transposition will be explained with reference to FIG. Here, an example is shown in which a layer to be peeled off is transferred from a glass substrate to an organic resin film substrate.

[0229] The sample was prepared by first placing island-shaped tandems on a 600mm x 720mm glass substrate. A stainless steel film (579 mm x 696 mm) was formed as a release layer. A peeling layer was formed. The peeled layer was an inorganic insulating film on a tungsten film and an inorganic insulating film on the inorganic insulating film. a plurality of transistors, an adhesive layer on the plurality of transistors, and an organic resin film on the adhesive layer. FIG. 20(A) shows a plurality of transistors formed on a glass substrate. Shows.

[0230] Then, the glass substrate and the layer to be peeled were separated using the peeling layer. As shown in FIG. The layer to be peeled off from the glass substrate has flexibility. An organic resin film substrate was attached to the inorganic insulating film. (D) A flexible sample in which the layer to be peeled is sandwiched between a pair of organic resin film substrates. In addition, Fig. 20(C) and (D) show the organic resin film substrate. The materials used are different. In FIG. 20(D), the transmittance to visible light is higher than that in FIG. 20(C). A thin film (specifically, PEN film) was used.

[0231] By applying one embodiment of the present invention, an organic EL element, a first bonding layer, and a second bonding layer are used as a layer to be peeled off. By forming a composite layer, a large light-emitting device of 600mm x 720mm or more can be formed, as in the above case. It is possible.

[0232] As described above, the light-emitting device according to one embodiment of the present invention includes a first insulating film between the flexible substrate and the organic EL element. A bonding layer and a second bonding layer are used. The first bonding layer is made to have a higher gas barrier property than the first bonding layer. By surrounding the first bonding layer with a high second bonding layer, the first bonding layer has low volume shrinkage during hardening and high light transmission. Materials with poor gas barrier properties such as high transparency (especially for visible light) or high refractive index Even if a thin material is used, it is possible to prevent moisture and oxygen from entering the light emitting device from the outside. Therefore, it is possible to realize a highly reliable light emitting device in which shrinkage of the light emitting portion is suppressed. do.

[0233] This embodiment mode can be combined with other embodiment modes as appropriate.

[0234] (Embodiment 2) In this embodiment, a method for curing a bonding layer in manufacturing a light-emitting device according to one embodiment of the present invention will be described. An example of the above will be described.

[0235] In this embodiment, the first bonding layer 407 and the like in the light-emitting device shown in FIGS. A case where the second bonding layer 404 is hardened will be described. As shown in FIG. The first bonding layer 407 and the second bonding layer 404 are attached to the formation substrate 201, the peeling layer 203, and the layer to be peeled 205, and the other surface side of the preparation substrate 221, the peeling layer 223, and the layer to be peeled Overlapping with layer 225 .

[0236] Since the end of the region that can be peeled off and displaced is inside the end of the peeling layer, the first bonding layer 4 In order to fabricate a light-emitting device having the first bonding layer 407 and the second bonding layer 404, The first and second bonding layers 404 must be provided to overlap the peeling layer. Then, first bonding layer 407 and second bonding layer 404 need to be cured.

[0237] Below, two examples of the process for hardening the bonding layer are given. In the first step, the first bonding layer 407 In the first embodiment, a photocurable resin is used for the first and second bonding layers 404. An example in which a thermosetting resin is used for layer 404 is shown.

[0238] <Method 1 for hardening the bonding layer> When a photocurable resin is used as the material for the bonding layer, light for curing the photocurable resin is applied to the substrate. The plate, the peeling layer, and the layer to be peeled must be transparent.

[0239] In a method for manufacturing a light-emitting device according to one embodiment of the present invention, a tungsten film and a tungsten oxide film are used as a peeling layer. The interface between the tungsten film and the tungsten oxide film (or near the interface) is Peeling occurs at the side of the substrate, so that the formation substrate and the layer to be peeled can be separated.

[0240] Here, depending on the material, such as a metal film such as a tungsten film, if the peeling layer is too thick, it may become transparent. The light transmittance becomes low, and the light for curing the photocurable resin becomes hard to transmit. Problems such as the resin not curing or the photocurable resin taking a long time to cure arises.

[0241] Therefore, the transmittance of light for curing the photocurable resin in the release layer is greater than 0%. A concentration of 1% or more is preferable.

[0242] On the other hand, if the thickness of the release layer is too thin, the yield of the release step may decrease. However, if the film thickness is small, it may be difficult to form the film with a uniform thickness.

[0243] Therefore, the thickness of the release layer is preferably 2 nm or more, and more preferably 5 nm or more.

[0244] For example, a glass substrate is used as the preparation substrate 201 shown in FIG. A tungsten film is used as the peeled layer 205, and a silicon oxynitride film with a thickness of 600 nm and a film FIG. 16 shows the transmittance of a sample using a stack of 200 nm thick silicon nitride films.

[0245] FIG. 16 shows the results when the thickness of the tungsten film is 5 nm, 15 nm, and 30 nm. show.

[0246] Even with a thickness of 30 nm, the transmittance of ultraviolet light for a tungsten film is only about 2 to 3%. It is possible to cure the ultraviolet light curable resin through the material. By making the film thinner, the transmittance is increased, ensuring that the UV-curable resin is cured through the sample. It is suggested that it is possible to cure the composition in a short time or in a short time.

[0247] An example of a top surface shape of a peeling layer used in a manufacturing method of a light-emitting device according to one embodiment of the present invention is shown in FIG. As shown in (F).

[0248] FIG. 12D shows a case where a photocurable resin is used for the first bonding layer 407 and the second bonding layer 404. In FIG. 12(D), a release layer 3 is provided on a formation substrate 301. In this case, the film thickness of the peeling layer 303 is set to the thickness of the photocurable film used for each bonding layer. The first bonding layer 407 is then formed so as to transmit light for hardening the curable resin. In addition, the photocurable resin used for the second bonding layer 404 can be cured, and the reliability of the light-emitting device can be improved. In addition, when the film thickness is set to 2 nm or more, the film formation process of the peeling layer 303 and the peeling process can be performed with ease. This is more preferable since it can suppress a decrease in the process yield.

[0249] 12E and 12F show a peeling layer used when a photocurable resin is used for the second bonding layer 404. This is an example.

[0250] In FIG. 12E, an island-shaped peeling layer provided on the formation substrate 301 is larger than the region 303b. The region 303a has a thin film thickness in a frame shape. The region 303a overlaps with the second bonding layer 404. It is formed so that

[0251] In FIG. 12F, the island-shaped peeling layer provided on the formation substrate 301 is smaller than the region 303b. The region 303a is a thin lattice-shaped region formed in a frame shape. Form it so that it overlaps with 04.

[0252] The thickness of the region 303a shown in FIGS. 12E and 12F is determined by the photocurable film used for the second bonding layer 404. The resin is then cured by light. This allows the second bonding layer 404 to transmit light for curing the resin. The photocurable resin used can be cured, and the reliability of the light emitting device can be improved. If the film thickness is 2 nm or more, the decrease in yield during the film formation process of the peeling layer and the peeling process can be suppressed. However, if the region 303b, which is thicker than the region 303a, is too thick, the film formation Because it takes time to process the film, it is preferable to have a thickness between 2 nm and 1000 nm, and a thickness of 5 nm or less. More preferably, it is not less than 100 nm.

[0253] 13, a peeling layer having a thin film region 303a and a thick film region 303b is An example of a method for producing the above will be described.

[0254] First, as shown in FIG. 13A, a base film 302 is formed on a substrate 301, and a base film 3 A release layer 303 is formed on the substrate 302 .

[0255] As the peeling layer 303, a tungsten film having a thickness of 25 nm is formed here.

[0256] Next, as shown in FIG. 13(B), a resist 304 is formed on the peeling layer 303.

[0257] Then, the peeling layer 303 is processed into a plurality of island-shaped peeling layers 303c by a photolithography process. To work.

[0258] Then, a peeling layer is further formed on the base film 302 and the peeling layer 303c. A 5 nm tungsten film is formed.

[0259] As a result of the above, a peeling film having a region 303b with a thickness of about 30 nm and a region 303a with a thickness of about 5 nm is formed. A thin film area 303a is provided to overlap the bonding layer to be hardened. This allows the bonding layer to be cured more reliably in a short period of time.

[0260] In the above, the case where tungsten is used for the peeling layer has been exemplified, but the present invention is not limited to this. Similarly, when a material (such as a metal) whose light transmittance changes depending on the film thickness is used for the peeling layer, At least a part of the region overlapping the bonding layer is made to a degree that transmits light for curing the photocurable resin. By thinning the bonding layer, the bonding layer can be hardened more reliably. By hardening the adhesive layer, the light-emitting device can include an adhesive layer, thereby improving the reliability of the light-emitting device. It can be done.

[0261] <Method 2 for hardening the bonding layer> Next, an example in which a thermosetting resin is used for the second bonding layer 404 will be described.

[0262] When using a thermosetting resin for the bonding layer, a heat source such as a heater or a light source such as a lamp or laser is used. The bonding layer can be hardened by the heat treatment using a lamp or laser. The formation substrate, the release layer, and the layer to be peeled must transmit the light.

[0263] When the layer to be peeled off contains a color filter or an organic EL element with low heat resistance, the material for the bonding layer is If a thermosetting resin is used, the color filter and organic EL element will not be damaged by heat during the heat treatment. There is a risk of receiving a message.

[0264] Thus, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an absorption layer is formed overlapping with the bonding layer. Then, heat is applied to the bonding layer through the absorption layer to harden the bonding layer. Only the bonding layer overlapping the absorption layer can be selectively heated. Heating can be suppressed.

[0265] The absorption layer is a layer that absorbs light irradiated to heat the bonding layer and converts it into heat. The absorption layer has a low reflectance of 70% or less against the irradiated light and a high absorption rate. It is preferable that the absorbing layer is made of a material that does not change due to heat. It is preferable that the absorbent layer is made of a material having excellent heat resistance so as not to cause damage to the absorbent layer. Examples of materials that can be used include titanium nitride, tantalum nitride, molybdenum nitride, and tantalum nitride. Metal nitrides such as tin, chromium nitride, and manganese nitride, as well as molybdenum, titanium, tungsten, and It is preferable to use stainless steel, carbon, or the like.

[0266] When the release layer also serves as the absorbent layer, there is no need to provide a separate absorbent layer.

[0267] For example, as shown in FIG. 14(A), an island-shaped absorption layer 222 is formed on a preparation substrate 221, A release layer 223 is formed to cover the absorbing layer 222, and a layer to be peeled 225 is formed on the release layer 223. Then, a peeled layer 205 provided on the fabrication substrate 201 with a peeling layer 203 interposed therebetween and a peeled layer 206 The release layer 225 is attached using a first bonding layer 407 and a second bonding layer 404 .

[0268] In addition, although FIG. 14A shows an example in which the entire second bonding layer 404 overlaps with the absorption layer 222, , at least a portion of them may overlap.

[0269] By irradiating lamp light or laser light from the side of the fabrication substrate 221, the absorption layer 222 converts the light into heat. The heat can then harden second bonding layer 404.

[0270] In addition, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an absorption layer is formed overlapping with a bonding layer, and The reflective layer is then formed by overlapping it with an organic EL element or the like with low thermal conductivity. This allows the bonding layer to be selectively hardened only where it overlaps with the absorbing layer. In addition, by providing a reflective layer, the organic EL element or the like can be prevented from being heated. This can suppress the following.

[0271] The reflective layer reflects the light irradiated to heat the bonding layer so as not to heat the organic EL elements, etc. The reflective layer is made of a material that has a high reflectivity against the irradiated light. Specifically, the reflective layer is preferably configured to reflect 85% or more of the irradiated light. It is preferable that the reflector 10 is made of a material having a high reflectance, preferably 90% or more.

[0272] Examples of materials that can be used for the reflective layer include aluminum, silver, gold, platinum, copper, Alloys containing aluminum (e.g. aluminum-titanium alloys, aluminum-neodymium alloys) alloy), or an alloy containing silver (silver-neodymium alloy), etc. can be used.

[0273] For example, as shown in FIG. 14(B), an organic EL element or a color filter is formed on a production substrate 221. A reflecting layer 224 is provided to overlap the substrate 221, and an absorbing layer 222 is provided on the substrate 221 and the reflecting layer 224. A peeling layer 223 and a peeled layer 225 are laminated in this order on the absorbing layer 222. A peeled layer 205 and a peeled layer 225 are provided on the substrate 201 via a peeling layer 203. The first bonding layer 407 and the second bonding layer 404 are used for bonding.

[0274] In addition, although FIG. 14B shows an example in which the reflective layer 224 and the second bonding layer 404 do not overlap each other, , and may overlap partially.

[0275] By irradiating the substrate 221 with lamp light or laser light, the absorption layer 222 converts the light into heat. The heat can then harden second bonding layer 404.

[0276] In addition, when providing a heat insulating layer that overlaps with the organic EL element or color filter, a heat source such as a heater must be installed. Examples of the heat insulating layer include titanium oxide, silicon oxide, silicon oxynitride, Zirconium oxide, titanium carbide, etc. can be preferably used for the heat insulating layer. The material used for the insulating layer has a lower thermal conductivity than the material used for the absorbing layer.

[0277] The lamps used for the heat treatment are flash lamps (xenon flash lamps, cryogenic discharge lamps, such as phonon flash lamps, xenon lamps, and metal halide lamps Heat lamps such as halogen lamps and tungsten lamps can be used.

[0278] The lasers used for the heat treatment include Ar laser, Kr laser, and excimer laser. Gas laser, single crystal YAG, YVO 4 , forsterite (Mg 2 SiO 4 ), Y.A. lO 3 , GdVO 4 , or polycrystalline (ceramic) YAG, Y 2 O 3 , YVO4 , Y AlO 3 , GdVO 4 and Nd, Yb, Cr, Ti, Ho, Er, and Tm as dopants. Lasers using a medium containing one or more of the following: Ruby laser, Alexandrite laser, Ti:sapphire laser, Copper vapor laser or A gold vapor laser or the like can be used.

[0279] In addition, in the case where the light emitting device to be manufactured may have an absorption layer 222 and a reflection layer 224, As shown in FIG. 2C, an absorption layer 222 and a reflection layer 224 may be formed on the release layer 223. In this case, the order in which the layers constituting the peeled layer 225, the absorbing layer, and the reflective layer are formed does not matter. .

[0280] As described above, when forming a bonding layer using a thermosetting resin, by providing an absorption layer, The bonding layer can be selectively heated. Also, by providing a reflective layer, it is possible to selectively heat the active layer, which has low heat resistance. This prevents the EL element from being damaged by heat. This can be performed more reliably. Also, deterioration in the reliability of the light emitting device can be suppressed.

[0281] By using the method for hardening the bonding layer described in this embodiment, the bonding layer can be made of a thermosetting resin or A photocurable resin can be used. In addition, the bonding layer can be reliably cured in a short time. In addition, even if heat treatment is performed, the organic EL element and the color filter are not damaged by heat. In addition, even if the thickness of the peeling layer is thin enough to transmit light, This can suppress a decrease in yield.

[0282] This embodiment mode can be combined with other embodiment modes as appropriate.

[0283] (Embodiment 3) In this embodiment, electronic devices and lighting devices using a light-emitting device according to one embodiment of the present invention will be described. This will be explained using FIG.

[0284] By using the light-emitting device of one embodiment of the present invention, highly reliable and flexible electronic devices and lighting devices can be realized. It is possible to create a bright device.

[0285] The electronic device may be, for example, a television device (also called a television or television receiver). (c), computer monitors, digital cameras, digital video cameras, digital Photo frames, mobile phones (also called mobile phones or mobile phone devices), portable game machines, Examples include portable information terminals, audio playback devices, and large game machines such as pachinko machines.

[0286] In addition, since the light-emitting device of one embodiment of the present invention has flexibility, it can be attached to the inner or outer wall of a house or a building. , or may be incorporated along curved surfaces in the interior or exterior of a vehicle.

[0287] FIG. 15A shows an example of a mobile phone. A mobile phone 7400 includes a housing 7401. In addition to the display unit 7402, an operation button 7403, an external connection port 7404, The mobile phone 7400 is equipped with a speaker 7405, a microphone 7406, and the like. The display device according to one embodiment of the present invention is used for the display portion 7402. In this manner, it is possible to provide a highly reliable mobile phone having a curved display portion.

[0288] In the mobile phone 7400 shown in FIG. 15A, when a user touches a display portion 7402 with a finger or the like, information is displayed. You can also make calls, enter text, or do any other kind of An operation can be performed by touching the display portion 7402 with a finger or the like.

[0289] In addition, by operating the operation button 7403, the power can be turned on and off, and the display unit 7402 can be You can change the type of image displayed. For example, from the email composition screen, You can switch to the menu screen.

[0290] FIG. 15B shows an example of a wristband-type portable display device. 00 includes a housing 7101, a display unit 7102, an operation button 7103, and a transmission / reception device 7104. Equipped with.

[0291] The portable display device 7100 can receive a video signal by a transmitting / receiving device 7104. Video can be displayed on the display unit 7102. Audio signals can also be sent to other receiving devices. It is also possible.

[0292] In addition, the operation button 7103 can be used to turn the power on and off and to switch the image to be displayed. , or adjust the volume of the audio.

[0293] Here, the light-emitting device of one embodiment of the present invention is incorporated in the display portion 7102. According to one embodiment, a highly reliable portable display device having a curved display portion can be provided.

[0294] 15(C) to (E) show examples of the lighting device. 210 and the lighting device 7220 each include a base 720 having an operation switch 7203. 1 and a light emitting part supported by a base part 7201.

[0295] The lighting device 7200 shown in FIG. 15C includes a light-emitting unit 7202 having a wavy light-emitting surface. This makes it a highly designed lighting device.

[0296] An example of a light-emitting device that can be used for the light-emitting portion 7202 shown in FIG. 15C is shown in FIG. The light-emitting device 7209 shown in FIG. 21A can emit light in a curved state. The light emitting panel 7205 has flexibility and can have a convex curved surface and a concave curved surface. The light emitting region 7204 has a curved surface. Located on the front of the building.

[0297] Examples of plan views of the back surface of the light-emitting device 7209 are shown in FIGS. 21(B) and (C). In FIG. 21(B), a cross-sectional view taken along dashed line Z1-Z2 in the plan view is shown. In FIG. 21(C), The cross-sectional view of the dashed line Z3-Z4 in FIG. 21(B) and (C) are also shown. 72 illustrates a light emitting device 7209 in an unbent state.

[0298] As shown in FIG. 21B, the light-emitting device has a back surface electrically connected to a light-emitting panel 7205. The support 7206 may be configured to include an FPC 7207 and a support 7206.

[0299] As shown in FIG. 21C, the light-emitting device has a light-emitting panel 7205 on the back surface. The structure includes an FPC 7207 to be connected and a support 7206 that covers the FPC 7207. It is also possible.

[0300] As shown in FIG. 22(D), FPs are attached to a pair of opposing surfaces of the support 7206. By having C and a light-emitting panel, a double-sided light-emitting device can be manufactured.

[0301] The support 7206 may be a flexible substrate as exemplified in the first embodiment, or a curved flexible substrate. The light-emitting panel 7205 can be curved along the support 7206. By doing so, it is possible to realize a light emitting portion 7202 having a wavy light emitting surface.

[0302] An example of the light-emitting device 7209 is shown in a perspective view in FIG. 22(A) and in a plan view in FIG. 22(B). Regarding the positional relationship between the FPC 7207 and the support 7206 in the configuration shown in FIG. This is shown in FIG.

[0303] The light-emitting portion 7212 of the lighting device 7210 shown in FIG. 15(D) has two convexly curved The light emitting parts are arranged symmetrically. It can illuminate the direction.

[0304] The lighting device 7220 shown in FIG. 15(E) includes a light-emitting portion 7222 that is curved in a concave shape. Therefore, in order to collect light emitted from the light emitting unit 7222 on the front surface of the lighting device 7220, It is suitable for brightly lighting an area.

[0305] In addition, the light-emitting units of the lighting devices 7200, 7210, and 7220 Since it is flexible, the light-emitting part can be made of plastic materials or movable frames. The light emitting surface of the light emitting portion may be freely curved depending on the application.

[0306] In the above, the illumination device in which the light-emitting unit is supported by the base is illustrated. The housing can be fixed to the ceiling or hung from the ceiling. The surface can be curved, so the light-emitting surface can be curved concavely to illuminate a specific area. It can also illuminate an entire room by curving the light-emitting surface convexly.

[0307] Here, each light-emitting portion incorporates a light-emitting device according to one aspect of the present invention. This makes it possible to provide a lighting device that has a curved light-emitting portion and is highly reliable.

[0308] FIG. 15F shows an example of a portable display device. The display device 7300 has a housing 7 301, display unit 7302, operation button 7303, drawer member 7304, control unit 7305 Equipped with.

[0309] The display device 7300 is a flexible display unit wound in a roll in a cylindrical housing 7301. Equipped with 7302.

[0310] In addition, the display device 7300 can receive a video signal through the control unit 7305. The control unit 7305 is equipped with a battery. In addition, a terminal unit for connecting a connector to the control unit 7305 is provided, and video signals and power can be transmitted by wire. Alternatively, the power may be supplied directly from the outside.

[0311] In addition, the operation button 7303 can be used to turn the power on and off and to switch the image to be displayed. etc. can be carried out.

[0312] FIG. 15G shows a state in which the display unit 7302 is pulled out by a pull-out member 7304. In this state, an image can be displayed on the display unit 7302. The operation button 7303 arranged on the surface of the housing 7301 allows easy operation with one hand. In addition, as shown in FIG. 15F, the operation button 7303 can be placed in the center of the housing 7301. By placing it close to one side, it can be easily operated with one hand.

[0313] Note that the display unit 7302 is fixed so that the display surface of the display unit 7302 becomes flat when the display unit 7302 is pulled out. In order to secure the display portion 7302 in place, a frame for reinforcing the display portion 7302 may be provided on the sides of the display portion 7302.

[0314] In addition to this configuration, a speaker is provided on the housing, and the device can be operated by receiving an audio signal together with the video signal. The configuration may be such that audio is output.

[0315] The light-emitting device according to one embodiment of the present invention is incorporated in the display portion 7302. It is possible to provide a lighter and more reliable display device.

[0316] This embodiment mode can be freely combined with other embodiment modes. EXAMPLES

[0317] In this example, a flexible light-emitting device according to one embodiment of the present invention was manufactured and its reliability was evaluated. The results will be explained below.

[0318] A plan view of the sample 1 produced in this embodiment is shown in FIG. 17(A1). A cross-sectional view of the X5-Y5 section is shown in FIG. FIG. 17(A2) shows a cross-sectional view taken along the dashed line X6-Y6 in FIG. 17(A2). ) is shown. A plan view of a comparative sample prepared as a comparative example is shown in FIG. 18(A). A cross-sectional view taken along dashed line X7-Y7 in (A) is shown in FIG. 18(B).

[0319] In the sample of this embodiment, the structure example 1 described in the embodiment 1 (FIGS. 2(A) and (B) ) The description of the same configuration as that of the first embodiment may be omitted. In this method, the same manufacturing steps as in the manufacturing method 1 of the device described in the first embodiment (FIGS. 6 to 8) are performed. In such cases, the explanation may be omitted.

[0320] Sample 1 includes a flexible substrate 420, a flexible substrate 428, and a flexible substrate 420 and a flexible substrate 428 and a transistor 455 between the transistor 455 and the flexible substrate 428. The first bonding layer 40 between the flexible substrate 428 and the organic EL element 450 7, and a frame-shaped second bonding layer 404a surrounding the first bonding layer 407.

[0321] In the sample 1, the organic EL elements and transistors included in the light-emitting section 491 and the driving circuit section 493 The substrate includes a flexible substrate 420, a flexible substrate 428, a first bonding layer 407, and a second bonding layer 408. It is sealed by 404a.

[0322] Sample 1 is different in that it has a first bonding layer 407 between the insulating layer 226 and the second bonding layer 404a. , which is different from configuration example 1 (Figures 2(A) and (B)).

[0323] The sample 2 includes a flexible substrate 420, a flexible substrate 428, and a flexible substrate 420 and a flexible substrate 428 and a transistor 455 between the transistor 455 and the flexible substrate 428. The first bonding layer 40 between the flexible substrate 428 and the organic EL element 450 7, a frame-shaped third bonding layer 404b surrounding the first bonding layer 407, and and a frame-shaped second bonding layer 404a surrounding the first bonding layer 404.

[0324] In sample 2, the organic EL elements and transistors included in the light-emitting section 491 and the driving circuit section 493 The substrate includes a flexible substrate 420, a flexible substrate 428, a first bonding layer 407, a third bonding layer 40 4b, and is sealed by a second bonding layer 404a.

[0325] In the light-emitting device according to one embodiment of the present invention, the second bonding layer 404a and At least one of the third bonding layers 404b has a higher gas barrier property than the first bonding layer 407. It is preferable that both of them have a higher gas barrier property than the first bonding layer 407. It is nice.

[0326] Sample 2 has a third bonding layer 404b and an insulating layer 226 and a second bonding layer 40 The first bonding layer 404a is disposed between the insulating layer 226 and the third bonding layer 404b, and the insulating layer 226 and the third bonding layer 404b are disposed between the insulating layer 226 and the third bonding layer 404a. This configuration example differs from configuration example 1 (FIGS. 2(A) and (B)) in that it has a second filter 7.

[0327] The comparative samples are flexible substrate 420, flexible substrate 428, and flexible substrate 420 and flexible substrate 428. A transistor 455 between the plate 428 and a transistor 455 and a flexible substrate 428 The organic EL element 450 and the first bonding layer 4 between the flexible substrate 428 and the organic EL element 450 07 and has.

[0328] In the comparative sample, the organic EL elements and transistors included in the light-emitting section 491 and the driving circuit section 493 The transistor is sealed by a flexible substrate 420, a flexible substrate 428, and a first bonding layer 407. It has been done.

[0329] The comparative sample is similar to the comparative sample in configuration example 1 (FIGS. 2A and 2B) in that it does not have the second bonding layer 404. is different.

[0330] The method for preparing Samples 1, 2, and the comparative sample was as follows: first, a release layer was formed on each of a pair of preparation substrates. The peeled layer was then formed on the peeling layer. On one of the substrates, a tin film was formed. A laminated structure was formed from the insulating layer 424 to the organic EL element 450. The peeling layer is the stacked layer from the insulating layer 226 to the overcoat 453 in FIG. A layer structure was formed.

[0331] Next, for sample 1, the pair of preparation substrates were placed so that the surfaces on which the peeled layers were formed faced each other. The first bonding layer 407 and the second bonding layer 404a are bonded to the first bonding layer 407. 07 and second bonding layer 404a were allowed to cure.

[0332] In addition, in sample 2, a pair of preparation substrates were placed so that the surfaces on which the peeled layers were formed faced each other. The first adhesive layer 407, the second adhesive layer 404a, and the third adhesive layer 404b are used to attach the The first bonding layer 407, the second bonding layer 404a, and the third bonding layer 404b are hardened. It was transformed into this.

[0333] In the comparative sample, a pair of prepared substrates were arranged so that the surfaces on which the peeled layers were formed faced each other. As shown, the first bonding layer 407 was used for bonding, and the first bonding layer 407 was cured.

[0334] In each sample, a thermosetting resin was used for the first bonding layer 407. The resin was then cured by heat treatment at 80°C for 2 hours.

[0335] In the sample 1, the second bonding layer 404a was made of an ultraviolet light curable resin. 04a was cured by exposure to UV light for 200 seconds.

[0336] In the sample 2, the second bonding layer 404a is made of an ultraviolet light curable resin, and the third bonding layer 40 For 4b, we used an ultraviolet light curing resin containing zeolite. Zeolite acts as a desiccant. The second bonding layer 404a and the third bonding layer 404b are irradiated with ultraviolet light for 200 seconds. The bonding layer formed using the resin containing a desiccant was cured by irradiating the resin for 10 min. Even if the gas barrier property of the material itself is low, the desiccant absorbs moisture and the amount of water vapor passing through is low. In this case, the layer can be said to have high gas barrier properties.

[0337] As shown in the transmittance results for the bonding layer hardening method 1 described in the second embodiment, in samples 1 and 2, The ultraviolet light curable resin could be cured through a 30 nm thick tungsten film.

[0338] Each sample was bonded in a reduced pressure atmosphere.

[0339] Next, the starting point of peeling was formed by irradiating the sample with a laser beam. The region overlapping with the cured second bonding layer 404a was irradiated with the light. The sample 2 having the second bonding layer 404a and the first bonding layer 407 is The light-emitting device has a structure including a bonding layer 404a, a third bonding layer 404b, and a first bonding layer 407. It is possible.

[0340] Then, the layer to be peeled was separated from the first preparation substrate from the formed peeling starting point.

[0341] Thereafter, the exposed peeled layer and the flexible substrate are bonded together using an adhesive layer, and the adhesive layer is cured. Next, a cutter was used to form a peeling starting point, and the layer to be peeled was cut into two pieces from the peeling starting point. The eye preparation substrate was separated.

[0342] Thereafter, the exposed peeled layer and the flexible substrate are bonded together using an adhesive layer, and the adhesive layer is cured. In addition, the conductive layer 457 was exposed and electrically connected to the FPC 495.

[0343] Reliability tests were carried out on each sample. Specifically, each sample was placed in a high-temperature, high-humidity environment (temperature 65 The display state of each sample was observed under an optical microscope in Fig. 19(A) to (G). The results of the observation are shown in Fig. 19(A) to (F). The upper row shows 100x magnification photographs, and the lower row shows 100x magnification photographs. Photographs at a magnification of 500 times are shown in Fig. 19(G) and Fig. 19(H) show only the photographs at a magnification of 100 times.

[0344] FIG. 19(A) shows the display state of the comparative sample before the reliability test. FIG. 19(B) shows The display state of the comparative sample after being kept in a high-temperature, high-humidity environment for 100 hours is shown.

[0345] FIG. 19(C) shows the display state of Sample 1 before the reliability test. The display state of Sample 1 after it was kept in a high-temperature, high-humidity environment for 500 hours is shown.

[0346] FIG. 19(E) shows the display state of Sample 2 before the reliability test. The display state of sample 2 after 500 hours of exposure to a high temperature and high humidity environment is shown in Fig. 19. (G) shows the display state of sample 2 after it was kept in a high-temperature and high-humidity environment for 1000 hours.

[0347] In the comparative sample, shrinkage (here, development) occurred 100 hours after the start of the reliability test. The occurrence of deterioration in brightness from the edges of the light-emitting parts and the expansion of non-light-emitting areas from the light-emitting parts was confirmed. In addition, 500 hours after the start of the reliability test, some shrinkage occurred in sample 1. However, no shrinkage was observed in sample 2. Even 1000 hours after the start of the durability test, sample 2 was generally prone to shrinkage. No shrinkage was observed in the four corners of the light-emitting part.

[0348] From the results of this example, Samples 1 and 2 to which one embodiment of the present invention is applied are more reliable than the comparative sample. As in samples 1 and 2, the first bonding layer has a frame-shaped bonding layer surrounding it. By adopting this configuration, moisture is prevented from penetrating into the first bonding layer and further into elements such as organic EL elements. It was suggested that this could be suppressed.

[0349] In addition, as in sample 2, a resin containing a desiccant is used as a frame-shaped third bonding layer surrounding the first bonding layer. The second bonding layer, which is a frame surrounding the third bonding layer, is made of resin that does not contain a desiccant. By doing so, the reliability of the light emitting device can be further improved. The layer can suppress the intrusion of moisture, etc., and even if moisture penetrates the second bonding layer, However, the desiccant contained in the third bonding layer can adsorb the moisture, so that the first bonding layer, It has been suggested that the intrusion of moisture into elements such as organic electroluminescence elements can be suppressed. [Explanation of symbols]

[0350] 101 First flexible substrate 103 Adhesive layer 105 Element Layer 107 First bonding layer 109 Second bonding layer 111 Second flexible substrate 113 Third bonding layer 115 Fourth bonding layer 201 Preparation substrate 203 Peeling layer 205 Peeling layer 213 Resin layer 215 Irradiation area 221 Preparation Substrate 222 Absorption Layer 223 Peeling layer 224 Reflective layer 225 Peeling layer 226 Insulating Layer 231 Flexible substrate 233 Third bonding layer 235 Fourth bonding layer 301 Preparation Board 302 Base film 303 Peeling layer 303a area 303b area 303c Peeling layer 304 Resist 401 First electrode 402 EL layer 403 Second electrode 404 Second bonding layer 404a Second bonding layer 404b Third bonding layer 405 Insulation Layer 406 Conductive Layer 407 First bonding layer 408 Conductive Layer 409 Light extraction structure 410 Conductive layer 416 Conductive Layer 419 Flexible substrate 420 Flexible substrate 422 Adhesive layer 424 Insulating layer 426 Adhesive layer 428 Flexible substrate 431 Light blocking layer 432 Colored layer 435 Conductive Layer 450 Organic EL element 453 Overcoat 454 Transistor 455 Transistor 457 Conductive Layer 463 Insulating Layer 465 Insulating Layer 467 Insulating Layer 491 Light emitting part 493 Drive circuit section 495 FPC 497 Connectors 7100 Portable display devices 7101 Case 7102 Display section 7103 Operation button 7104 Transmitting and receiving equipment 7200 Lighting Equipment 7201 Daibu 7202 Light emitting part 7203 Operation switch 7204 Light-emitting area 7207 FPC 7210 Lighting equipment 7212 Light emitting part 7220 Lighting Equipment 7222 Light emitting part 7300 display device 7301 Case 7302 Display section 7303 Operation button 7304 Materials 7305 Control Unit 7400 Mobile Phone 7401 Case 7402 Display section 7403 Operation button 7404 External connection port 7405 Speaker 7406 Mike

Claims

[Claim 1] A first flexible substrate; A second flexible substrate; and a light emitting element between the first flexible substrate and the second flexible substrate; a first bonding layer between the second flexible substrate and the light emitting element, and a frame-shaped second bonding layer surrounding the first bonding layer; The light-emitting element has a layer containing a light-emitting organic compound between a pair of electrodes, The second bonding layer has a higher gas barrier property than the first bonding layer.

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