Display device, display module, and electronic appliance

Abstract

To provide a display device with high definition, and a display device with high display quality.SOLUTION: A display device includes a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, and a color conversion layer. The first insulating layer is present on the first transistor and the second transistor. The first light-emitting diode and the second light-emitting diode are present on the first insulating layer. The color conversion layer is present on the second light-emitting diode. The color conversion layer has a function of converting the light emitted from the second light-emitting diode into light with longer wavelengths. Each of the first transistor and the second transistor includes a metal oxide layer and a gate electrode. The metal oxide layer includes a channel formation region. The height of an upper surface of the gate electrode and the height of an upper surface of the second insulating layer coincide or substantially coincide with each other.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, a display module, an electronic device, and a manufacturing method thereof. do.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors, etc.), input / output devices (e.g., touch panels, etc.), These driving methods and manufacturing methods can be given as examples. [Background technology]

[0003] In recent years, micro light emitting diodes (micro LEDs) Display devices using a liquid crystal display (LCD) as a display element have been proposed (see, for example, Patent Document 1). Display devices that use LEDs as display elements have the advantages of high brightness, high contrast, and long life. Research and development into this field is currently underway as a next-generation display device. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] US Patent Application Publication No. 2014 / 0367705 Summary of the Invention [Problem to be solved by the invention]

[0005] Display devices that use micro LEDs as display elements take an extremely long time to mount LED chips. For example, the pick-and-place method Let's create red (R), green (G), and blue (B) LEDs on different wafers. In this case, the LEDs are cut out one by one and mounted on a circuit board. The larger the number of LEDs required, the longer it takes to mount them. The higher the resolution, the more difficult it is to implement the LEDs.

[0006] An object of one embodiment of the present invention is to provide a display device with high definition. An object of one embodiment of the present invention is to provide a display device with high display quality. An object of the present invention is to provide a display device with low power consumption. One object of the present invention is to provide a high-performance display device.

[0007] One aspect of the present invention is to reduce the manufacturing cost of a display device using a micro LED as a display element. One aspect of the present invention is to provide a method for manufacturing a display device using micro LEDs with high yield. An object of the present invention is to manufacture a display device used for the above-mentioned display device.

[0008] Note that the description of these problems does not preclude the existence of other problems. However, it is not necessary to solve all of these problems. It is possible to extract other issues from the description in the section. [Means for solving the problem]

[0009] One aspect of the present invention is a semiconductor device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, and a A display device having a light emitting diode, a first light emitting diode, a second light emitting diode, and a color conversion layer. The first transistor is electrically connected to the first light emitting diode. The first transistor is electrically connected to the second light emitting diode. The first insulating layer is The first light emitting diode and the second light emitting diode are disposed on the first transistor and the second transistor. The diode is disposed on the first insulating layer. The color conversion layer is disposed on the second light emitting diode. The color conversion layer has the function of converting the light emitted by the second light-emitting diode into light with a longer wavelength. The first transistor and the second transistor each include a metal oxide layer and a gate The metal oxide layer has a channel forming region. The height is the same as or approximately the same as the height of the upper surface of the second insulating layer.

[0010] The first transistor further includes a gate insulating layer, a first conductive layer, and a second conductive layer. The metal oxide layer preferably has a first region overlapping the first conductive layer and a second conductive layer. and a third region between the first region and the second region. The conductive layer and the second conductive layer are spaced apart from each other on the metal oxide layer. The second insulating layer is , located on the first conductive layer and on the second conductive layer. The second insulating layer overlaps the third region. The gate insulating layer is located inside the opening and is in contact with the side surface and the second insulating layer. The gate electrode is located inside the opening and is formed on the upper surface of the gate insulating layer. Thus, it overlaps with the side surface of the second insulating layer and the top surface of the third region.

[0011] One aspect of the present invention is a semiconductor device comprising a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first a transistor, a second transistor, a first light emitting diode, a second light emitting diode, and The display device has a first transistor and a second transistor connected to a first conductive layer. The second transistor is electrically connected to the first light emitting diode through the second conductive layer. The first insulating layer is electrically connected to the first transistor. The first light emitting diode and the second light emitting diode are disposed on the first transistor and the second transistor. The first light emitting diode is disposed on the first insulating layer. The first light emitting diode is disposed on a first insulating layer. The second light emitting diode has a second electrode in contact with the second conductive layer. The height of the upper surface of the first electrode and the height of the upper surface of the second electrode are the same as the height of the upper surface of the second insulating layer. The color conversion layer is located on the second light emitting diode. The first light emitting diode has a function of converting the light emitted by the second light emitting diode into light of a longer wavelength. The first transistor and the second transistor each include a metal oxide layer. The layer has a channel forming region.

[0012] The color conversion layer is preferably in contact with the second light emitting diode. The display device further includes a third insulating layer located between the second light emitting diode and the color conversion layer. It is preferable that the color conversion layer is in contact with the third insulating layer.

[0013] The first light-emitting diode and the second light-emitting diode are respectively micro light-emitting diodes. It is preferable that:

[0014] The first light emitting diode and the second light emitting diode are each capable of emitting blue light. preferable.

[0015] The first transistor and the second transistor have at least one of a channel length and a channel width. It is preferable that the first and second electrodes have structures different from each other.

[0016] The display device according to one embodiment of the present invention preferably further includes a driver circuit and a fourth insulating layer. The driving circuit has a circuit transistor, and the circuit transistor is a channel on a semiconductor substrate. a fourth insulating layer is disposed on the semiconductor substrate, the fourth insulating layer is disposed on the semiconductor substrate, and the fourth insulating layer is disposed on the semiconductor substrate. The transistor, the first light emitting diode, and the second light emitting diode overlap each other. It is preferable.

[0017] The display device according to one embodiment of the present invention preferably further includes a colored layer located on the color conversion layer. At this time, the light emitted by the second light emitting diode is reflected on the display through the color conversion layer and the colored layer. It is preferable that the light source is taken out of the display device.

[0018] One embodiment of the present invention includes a display device having any one of the above structures, and a flexible printed circuit If the board (flexible printed circuit, hereafter referred to as FPC) Most of the connectors are equipped with TCP (Tape Carrier Package) etc. Modules that use COG (Chip On Glass) or COF (Ch Modules and other devices that incorporate integrated circuits (ICs) using the "IP On Film" method, etc. It is a rule.

[0019] One aspect of the present invention is a combination of the above module, an antenna, a battery, a housing, a camera, and a speaker. , a microphone, and an operation button.

[0020] In one embodiment of the present invention, a plurality of transistors are formed in a matrix over a first substrate, and A plurality of light emitting diodes are formed in a matrix on the first substrate or the second substrate. On the substrate, at least one of the plurality of transistors and at least one of the plurality of light emitting diodes are A first conductor is formed to electrically connect to another one of the transistors. At least one of the plurality of light emitting diodes is electrically connected to at least one of the plurality of resistors. In this manner, the first substrate and the second substrate are bonded together, and the second substrate is peeled off to form the first substrate. a color conversion layer is formed on the first surface, the color conversion layer being a color conversion layer of the plurality of light emitting diodes; The step of forming a plurality of transistors includes at least one parallel process. A method for manufacturing a display device using a flattening process. At least one of the plurality of transistors is preferably a micro light emitting diode. First, it is preferable that the channel forming region has a metal oxide. Effect of the Invention

[0021] According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a display device with low power consumption can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided.

[0022] According to one embodiment of the present invention, the manufacturing cost of a display device using a micro LED as a display element can be reduced. According to one embodiment of the present invention, a display device using micro LEDs as a display element can be manufactured with high yield. It is possible to manufacture display devices.

[0023] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. However, it is possible to extract effects other than these. [Brief description of the drawings]

[0024] [Figure 1] FIG. 1 is a diagram illustrating an example of a display device. [Diagram 2] 2(A) to 2(C) are diagrams showing an example of a method for manufacturing a display device. [Diagram 3] 3A and 3B are diagrams showing an example of a method for manufacturing a display device. [Figure 4] 4A and 4B are diagrams showing an example of a method for manufacturing a display device. [Diagram 5] 5(A) and 5(B) are diagrams showing an example of a display device. [Figure 6] FIG. 6 is a diagram illustrating an example of a display device. [Figure 7] 7(A) and 7(B) are diagrams showing an example of a display device. [Figure 8] 8A and 8B are diagrams showing an example of a method for manufacturing a display device. [Figure 9] 9A and 9B are diagrams showing an example of a method for manufacturing a display device. [Figure 10] Fig. 10(A) is a top view showing an example of a semiconductor device, and Figs. 10(B) to 10(D) are cross-sectional views showing an example of the semiconductor device. [Figure 11] Fig. 11(A) is a top view showing an example of a semiconductor device, and Figs. 11(B) to 11(D) are cross-sectional views showing an example of the semiconductor device. [Figure 12] FIG. 12 is a circuit diagram showing an example of a pixel of a display device. [Figure 13] Fig. 13(A) is a diagram explaining the classification of IGZO crystal structures. Fig. 13(B) is a diagram explaining the XRD spectrum of a quartz glass substrate. Fig. 13(C) is a diagram explaining the XRD spectrum of a crystalline IGZO film. Fig. 13(D) is a diagram explaining the micro-electron beam diffraction pattern of a quartz glass substrate. Fig. 13(E) is a diagram explaining the micro-electron beam diffraction pattern of a crystalline IGZO film. [Figure 14]14(A) and 14(B) are diagrams showing an example of an electronic device. [Figure 15] 15(A) and 15(B) are diagrams showing an example of an electronic device. [Figure 16] 16(A) and 16(B) are diagrams showing an example of an electronic device. [Figure 17] 17(A) to 17(D) are diagrams showing an example of an electronic device. [Figure 18] 18(A) to 18(F) are diagrams showing an example of an electronic device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention is not limited to the above embodiment, and various changes and modifications may be made in the form and details without departing from the spirit and scope of the present invention. It will be easily understood by those skilled in the art that the above-mentioned invention can be obtained by the following embodiments. It should not be construed as being limited to the contents described.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and the repeated explanations are omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be used.

[0027] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in the actual embodiment, in order to facilitate understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0028] The words "membrane" and "layer" may be interchangeable depending on the situation. For example, the term "conductive layer" can be used interchangeably with the term "conductive film." ". Alternatively, for example, the term "insulating film" may be changed to It is possible to change the term to "insulating layer."

[0029] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0030] [Display device overview] The display device of the present embodiment includes a light-emitting diode as a display element and a transistor for driving the display element. Each of the first and second transistors has a plurality of transistors.

[0031] In the display device of this embodiment, each pixel of a color has a light emitting diode that emits light of the same color. For example, when a light-emitting diode that emits blue light is used, the light-emitting diode The blue light emitted by the diode is extracted to the outside of the display device. Then, red, green, etc. In the pixels other than blue, the blue light emitted by the light-emitting diode is converted by the color conversion layer. , the light has a longer wavelength than blue and is extracted to the outside of the display device.

[0032] In the manufacture of a display device having light-emitting diodes that emit light of the same color in each pixel, Since only one type of light-emitting diode needs to be manufactured at a time, it is not necessary to manufacture multiple types of light-emitting diodes. The manufacturing equipment and process can be simplified compared to the case where the light emitting diode is connected to the circuit. This makes it easier to mount the transistor and the light-emitting diode on the substrate. This makes it easier to form the above-mentioned components on the same substrate.

[0033] A display device according to one embodiment of the present invention includes a plurality of transistors formed over different substrates. After bonding several light-emitting diodes to the substrate, the substrate on the light-emitting diode side is peeled off, and the The color conversion layer is provided on the exposed surface so as to overlap the light emitting diode.

[0034] In a method for manufacturing a display device according to one embodiment of the present invention, a plurality of light-emitting diodes and a plurality of transistors are This is a much faster process than mounting LEDs one by one on a circuit board. This allows the manufacturing time of the display device to be shortened. Even when manufacturing a semiconductor device, the degree of difficulty in manufacturing can be reduced.

[0035] The display device of this embodiment mode has a function of displaying an image using light-emitting diodes. Since the diode is a self-emitting element, when the light-emitting diode is used as a display element, the display The device does not require a backlight, and does not require a polarizing plate. This allows the power consumption of the device to be reduced, and the display device can be made thinner and lighter. Display devices that use light-emitting diodes as display elements have high contrast and a wide viewing angle. In addition, by using an inorganic material for the light-emitting material, the display device can be made more reliable. This can extend the life and reliability of the equipment.

[0036] In this embodiment, in particular, an example in which a micro LED is used as a light emitting diode will be described. In this embodiment, a micro LED having a double heterojunction will be described. However, the light-emitting diode is not particularly limited, and for example, a light-emitting diode having a quantum well junction may be used. Alternatively, a micro LED or an LED using nano columns may be used.

[0037] The area of ​​the light-emitting diode that emits light is 1 mm2 Less than 10000μm is preferable. 2 Less than 3000μm is more preferable. 2 Less than 700μm is more preferable. 2 The following is further In this specification, the area of ​​the light emitting region is preferably 10,000 μm 2 below Light-emitting diodes such as these are sometimes referred to as micro LEDs.

[0038] It is preferable that a transistor included in the display device has a metal oxide in a channel formation region. A transistor using a metal oxide can consume less power. By combining it with micro LEDs, it will be possible to realize a display device with extremely low power consumption. It is possible.

[0039] In particular, in the display device of the present embodiment, the height of the upper surface of the gate electrode is the same as the height of the upper surface of the insulating layer. It is preferable to have transistors that are matched or nearly matched. Flattening process using methods such as emical mechanical polishing By performing the etching, the upper surface of the gate electrode and the upper surface of the insulating layer are planarized, and the height of the upper surface of the gate electrode and The height of the upper surface of the insulating layer can be made uniform.

[0040] A transistor having such a structure can be easily reduced in size. By reducing the size of the pixel, the size of the display device can be reduced. The definition can be increased.

[0041] Since the display device of this embodiment mode can be manufactured with high resolution, it is possible to manufacture a display device having a relatively small display portion. Such electronic devices are suitable for use in wristwatches and Bluetooth devices. Retina-type information terminals (wearable devices) and head-mounted displays VR (Virtual Reality) devices, glasses-type AR (Augmented Reality) 3D Reality (VR) devices or MR (Mixed Reality) devices Examples of such devices include wearable devices that can be attached to the head.

[0042] [Display device configuration example 1] 1 shows a cross-sectional view of the display device 100A. FIGS. 2 to 4 show a method for producing the display device 100A. A cross-sectional view showing the same is shown.

[0043] In this embodiment, the light emitting diode 110a is provided in the red pixel, and the light emitting diode 1 1 shows an example in which 10b is provided for a blue pixel.

[0044] The light emitting diode 110a and the light emitting diode 110b have the same configuration and emit light of the same color. In this embodiment, the light emitting diode 110a and the light emitting diode 110b emit An example in which blue light is emitted will be described.

[0045] As shown in FIG. 1, the light emitted by the light emitting diode 110a of the red pixel is reflected by the color conversion layer 110b. The CCR converts blue to red, and the color layer CFR enhances the purity of the red light. , and is emitted to the outside of the display device 100A.

[0046] Similarly, although not shown, the light emitted by the light emitting diode of the green pixel is converted into light by the color conversion layer. The blue light is converted to green by the green coloring layer, and the purity of the green light is increased by the green coloring layer. It is ejected outside 100A.

[0047] On the other hand, the light emitted by the light emitting diode 110b of the blue pixel is displayed without passing through the color conversion layer. The light is emitted to the outside of the display device 100A.

[0048] The display device 100A shown in FIG. 1 includes an LED substrate 150A shown in FIG. 2(A) and a display device 150B shown in FIG. 2(C) and the circuit board 150B shown in FIG. 3(A) are attached to each other, and the light emitting diode 1 The substrate 101 on the sides 10a and 110b is peeled off (FIG. 3(B), FIG. 4(A)), and the exposed portions are The color conversion layer CCR and the colored layer CFR are provided on the above surface (FIG. 4(B)). ).

[0049] The configuration and manufacturing method of the display device 100A will be described below with reference to FIGS. 2 to 4. .

[0050] FIG. 2A shows a cross-sectional view of the LED substrate 150A.

[0051] The LED board 150A includes a board 101, a light-emitting diode 110a, and a light-emitting diode 110b. , and a protective layer 102.

[0052] The light emitting diode 110a and the light emitting diode 110b each include an electrode 112, a semiconductor The light-emitting layer 113 , the light-emitting layer 114 , the semiconductor layer 115 , and an electrode 116 .

[0053] The electrode 112 is electrically connected to the semiconductor layer 113. The electrode 116 is The protective layer 102 is electrically connected to the substrate 101, the semiconductor layer 113, and the light-emitting layer 1 The protective layer 102 is provided to cover the side surfaces of the electrodes 112 and the semiconductor layer 115. and an opening that covers the side surface of the electrode 116 and overlaps with the upper surface of the electrode 112 and the upper surface of the electrode 116. At the opening, the upper surface of the electrode 112 and the upper surface of the electrode 116 are exposed. .

[0054] The light emitting layer 114 is sandwiched between the semiconductor layer 113 and the semiconductor layer 115. In the semiconductor layer 113 or 115, electrons and holes combine to emit light. is an n-type semiconductor layer, and the other is a p-type semiconductor layer.

[0055] The stacked structure including the semiconductor layer 113, the light emitting layer 114, and the semiconductor layer 115 emits red, yellow, and green light. These laminated structures are formed to have structures that emit light of different colors, such as red, blue, or red. For example, gallium phosphide, gallium arsenide, gallium aluminum arsenide Compounds, aluminum gallium indium phosphide compounds, gallium nitride, indium Examples of the material that can be used include a selenium-gallium nitride compound and a selenium-zinc compound. The laminated structure is formed so as to have a structure that emits blue light.

[0056] The substrate 101 may be, for example, a sapphire (Al2O3) substrate or a silicon carbide (SiC) substrate. By using single crystal substrates such as silicon (Si) substrates and gallium nitride (GaN) substrates, This can be done.

[0057] FIG. 2B shows a cross-sectional view of the circuit board 150B.

[0058] The circuit board 150B includes a substrate 151, an insulating layer 152, a transistor 120a, a transistor 120b, conductive layer 184a, conductive layer 184b, conductive layer 187, conductive layer 189, insulating layer 18 6, conductive layer 190a, conductive layer 190b, conductive layer 190c, and conductive layer 190d. The circuit board 150B further includes an insulating layer 162, an insulating layer 181, an insulating layer 182, and an insulating layer 18. 3, and insulating layers such as insulating layer 185. One or more of these insulating layers may In some cases, the semiconductor device may be considered as a component of a transistor. This will be explained without including it in the above.

[0059] The substrate 151 may be an insulating substrate such as a glass substrate, a quartz substrate, a sapphire substrate, or a ceramic substrate. A single crystal semiconductor substrate made of silicon or silicon carbide, or a polycrystalline semiconductor substrate made of silicon or silicon carbide, etc. Conductor substrates, compound semiconductor substrates such as silicon germanium, SOI (Silicon On Insulator A semiconductor substrate such as a dielectric insulator substrate can be used.

[0060] The substrate 151 preferably blocks visible light (is non-transparent to visible light). The substrate 151 blocks visible light, and the transistors 120a and 120b formed on the substrate 151 However, one aspect of the present invention is to prevent light from entering the insulating film from the outside. Without being limited thereto, the substrate 151 may be transparent to visible light.

[0061] An insulating layer 152 is provided on the substrate 151. The insulating layer 152 is formed to prevent water from entering the substrate 151. Impurities such as silicon and hydrogen may diffuse into the transistors 120a and 120b, and metal oxide may be formed. It functions as a barrier layer that prevents oxygen from being released from the insulating layer 165 to the insulating layer 152 side. The edge layer 152 may be, for example, an aluminum oxide film, a hafnium oxide film, or a silicon nitride film. For example, a film in which hydrogen and oxygen are less likely to diffuse than a silicon oxide film can be used.

[0062] The transistors 120a and 120b are formed by a conductive layer 161, an insulating layer 163, an insulating layer 164, a metal The semiconductor device includes an oxide layer 165, a pair of conductive layers 166, an insulating layer 167, a conductive layer 168, and the like.

[0063] The metal oxide layer 165 has a channel forming region. a first region overlapping one of the layers 166 and a second region overlapping the other of the pair of conductive layers 166; , and a third region between the first region and the second region.

[0064] A conductive layer 161 and an insulating layer 162 are provided on the insulating layer 152. An insulating layer 163 and an insulating layer 164 are provided over the insulating layer 62. The metal oxide layer 165 is The conductive layer 161 functions as a gate electrode, and the insulating layer 16 The conductive layer 161 and the insulating layer 163 function as a gate insulating layer. The insulating layer 163 overlaps the metal oxide layer 165 via the edge layer 164. The insulating layer 164 in contact with the metal oxide layer 165 preferably functions as a barrier layer. It is preferable to use an oxide insulating film such as a silicon oxide film for the insulating film.

[0065] Here, the height of the upper surface of the conductive layer 161 is equal to or approximately equal to the height of the upper surface of the insulating layer 162. For example, an opening is provided in the insulating layer 162, and the conductive layer 161 is formed so as to fill the opening. After the formation, a planarization process is performed using a CMP method or the like to reduce the height of the upper surface of the conductive layer 161. The height of the upper surface of the insulating layer 162 can be made even. , 120b can be reduced in size.

[0066] A pair of conductive layers 166 are provided on the metal oxide layer 165 at a distance from each other. The metal oxide layer 165 and the pair of conductive layers 166 function as a source and a drain. An insulating layer 181 is provided to cover the insulating layer 66, and an insulating layer 182 is provided on the insulating layer 181. The insulating layer 181 and the insulating layer 182 are provided with openings that reach the metal oxide layer 165. An insulating layer 167 and a conductive layer 168 are embedded in the opening. The insulating layer 167 overlaps with the third region. The conductive layer 168 overlaps the side surface of the insulating layer 181 and the insulating layer 18 via the insulating layer 167. The conductive layer 168 functions as a gate electrode, and the insulating layer 167 functions as a gate insulator. The conductive layer 168 overlaps with the metal oxide layer 165 with the insulating layer 167 interposed therebetween.

[0067] Here, the height of the upper surface of the conductive layer 168 is equal to or approximately equal to the height of the upper surface of the insulating layer 182. For example, an opening is provided in the insulating layer 182, and the insulating layers 167 and 168 are formed so as to fill the opening. After the conductive layer 168 is formed, a planarization process is performed to reduce the height of the upper surface of the conductive layer 168 and the insulating layer 169. The height of the upper surface of the edge layer 182 can be made uniform. The size of 20b can be reduced.

[0068] Then, an insulating layer 183 is formed to cover the upper surfaces of the insulating layer 182, the insulating layer 167, and the conductive layer 168. The insulating layer 181 and the insulating layer 183 are formed on the insulating layer 152. Similarly, the insulating layer 181 preferably functions as a barrier layer. By covering the insulating layer 182, the pair of conductive layers 166 are prevented from being oxidized by oxygen contained in the insulating layer 182. This can suppress the following.

[0069] A plug electrically connected to one of the pair of conductive layers 166 and the conductive layer 187 is formed in the insulating layer 18. 1, embedded in openings provided in insulating layer 182, insulating layer 183, and insulating layer 185. The plug is a conductive layer 166 that contacts the side surface of the opening and the top surface of one of the pair of conductive layers 166. 84b and a conductive layer 184a embedded inside the conductive layer 184b. In this case, it is preferable to use a conductive material in which hydrogen and oxygen are not easily diffused as the conductive layer 184b. It is preferable that

[0070] A conductive layer 187 is provided on the insulating layer 185, and an insulating layer 186 is provided on the conductive layer 187. The insulating layer 186 has an opening that reaches the conductive layer 187. A conductive layer 189 is embedded. The conductive layer 189 is formed by a conductive layer 187 and a conductive layer 190a or It functions as a plug for electrically connecting to the conductive layer 190c.

[0071] One of the pair of conductive layers 166 of the transistor 120a is a conductive layer 184a and a conductive layer 184b. , and the conductive layer 190a through the conductive layer 187 and the conductive layer 189. .

[0072] Similarly, one of the pair of conductive layers 166 of the transistor 120b is a conductive layer 184a, a conductive layer 184b, the conductive layer 187, and the conductive layer 189 are electrically connected to the conductive layer 190c. It is being done.

[0073] Materials that can be used for various conductive layers constituting the display device of this embodiment include , aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum Metals such as nickel, silver, tantalum, or tungsten, or alloys with these as the main components. In addition, films containing these materials can be used as single layers or as laminated structures. For example, a single-layer structure of an aluminum film containing silicon, an aluminum film on a titanium film, Two-layer structure with a tungsten film on top of an aluminum film; two-layer structure with a copper film on top of a tungsten film; A two-layer structure in which a copper film is laminated on a magnesium-aluminum alloy film, and a copper film is laminated on a titanium film A two-layer structure in which a copper film is laminated on a tungsten film, a two-layer structure in which a titanium film or a titanium nitride film is laminated on a tungsten film, A titanium film is then laminated on top of the silicon film, and then an aluminum or copper film is laminated on top of that. A three-layer structure in which a titanium nitride film or a molybdenum nitride film is formed, a molybdenum film or a molybdenum nitride film, and An aluminum film or copper film is laminated on top of the substrate, and a molybdenum film or molybdenum nitride film is then laminated on top of that. There are three-layer structures that form an indium oxide film. In addition, when copper containing manganese is used, the shape by etching can be easily obtained. This is preferable because it improves controllability.

[0074] Materials that can be used for the various insulating layers constituting the display device of this embodiment include Resins such as acrylic resin, polyimide resin, epoxy resin, silicone resin, silicon oxide Silicon oxide nitride, silicon nitride oxide, silicon nitride, aluminum oxide, etc. Mechanical insulating materials are included.

[0075] In this specification and the like, silicon oxynitride refers to a material having a composition containing more oxygen than nitrogen. Silicon nitride oxide is a material that contains more nitrogen than oxygen. It has a high content of elements.

[0076] The circuit board 150B includes a reflective layer that reflects light from the light-emitting diode and a light-shielding layer that blocks the light. It may have one or both layers.

[0077] As shown in FIG. 2(C) and FIG. 3(A), a light-emitting diode (LED) provided on an LED substrate 150A In 110a, the electrode 116 is electrically connected to a conductive layer 190a provided on the circuit board 150B. The electrode 112 is electrically connected to a conductive layer 190b provided on the circuit board 150B. Similarly, in the light-emitting diode 110b provided on the LED substrate 150A, The electrode 116 is electrically connected to a conductive layer 190c provided on the circuit board 150B. The pole 112 is electrically connected to a conductive layer 190d provided on the circuit board 150B.

[0078] For example, the electrode 116 and the conductive layer 190a of the light-emitting diode 110a are connected to the conductor 117a. As a result, the transistor 120a and the light emitting diode 1 Similarly, the electrode 11 of the light-emitting diode 110b can be electrically connected to the electrode 11 of the light-emitting diode 110a. 6 and the conductive layer 190c are electrically connected via the conductor 117c. , the transistor 120b and the light emitting diode 110b can be electrically connected. The electrode 116 functions as a pixel electrode for the light emitting diodes 110a and 110b.

[0079] The electrode 112 of the light-emitting diode 110a and the conductive layer 190b are connected via a conductor 117b. The electrode 112 of the light-emitting diode 110b and the conductive layer 190d are electrically connected to each other. The electrode 112 is electrically connected to the light emitting diode 1 through the conductor 117d. It functions as a common electrode for 10a and 110b.

[0080] The conductors 117a to 117d are made of, for example, conductive paste such as silver, carbon, or copper, or gold. For example, a bump such as a solder can be preferably used. Electrodes 112, 116 and conductive layers 190a, 190b, 190c connected to either of them; The conductive material 190d has a low contact resistance with the conductors 117a to 117d. For example, when silver paste is used for the conductors 117a to 117d, The conductive materials connected to these are aluminum, titanium, copper, silver (Ag) and palladium. In the case of an alloy of Pd and Cu (Ag-Pd-Cu (APC)), the contact Low resistance is preferred.

[0081] In FIG. 2C, the conductors 117a to 117d are provided on the circuit board 150B side, and the LED board 1 50A and a circuit board 150B are bonded to each other. d is provided on the LED board 150A side, and the LED board 150A and the circuit board 150B are bonded together. This may be allowed.

[0082] A plurality of light emitting diodes may be electrically connected to one transistor.

[0083] The space between the LED substrate 150A and the circuit substrate 150B is filled with a filling layer 125. It is preferable that the filling layer 125 is used to ensure close contact between the light emitting diodes and the circuit board 150B. The filling layer 125 can be made of, for example, acrylic resin, poly Various resins such as imide resin, epoxy resin, and silicone resin can be used.

[0084] Also, the light emitted by the light emitting diode passes through the filler layer 125 and reaches the adjacent pixels, forming a display. This can cause a phenomenon called crosstalk, where the signal is emitted outside the device. It is preferable to use a colored resin such as black resin or brown resin for the filling layer 125. The filling layer 125 can be made of, for example, a resin containing carbon black. This makes it possible to suppress light leakage to adjacent pixels and improve the display quality of the display device.

[0085] In addition, when the substrate 101 is peeled off using a laser beam in a later step, the filling layer 125 is It is preferable that the circuit board 150B absorbs the laser light. Damage to the various circuits and elements formed can be suppressed.

[0086] After the LED substrate 150A and the circuit substrate 150B are bonded together, the substrate 101 is peeled off. There is no limitation on the method for peeling off the substrate 101.

[0087] FIG. 3B shows an example in which the entire surface of the substrate 101 is irradiated with the laser light 128. For example, When a sapphire substrate is used as the substrate 101 and gallium nitride is used as the semiconductor layer 113, laser light 1 By irradiating ultraviolet light as 28, the substrate 101 can be peeled off (FIG. 4(A)). .

[0088] The laser may be an excimer laser, a solid-state laser, or the like. A diode pumped solid state laser (DPSS) may also be used.

[0089] A release layer may be provided between the substrate 101 and the light emitting diodes 110a and 110b. After peeling off 101, the light emitting diodes 110a and 110b may be exposed. The release layer may be one of the components of the display device 100A.

[0090] The release layer can be formed using an organic material or an inorganic material.

[0091] Examples of organic materials that can be used for the release layer include polyimide resin and acrylic resin. , epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclohexyl Examples of the resin include phenylene resin and phenol resin.

[0092] Inorganic materials that can be used for the release layer include tungsten, molybdenum, titanium, and titanium. Niobium, Nickel, Cobalt, Zirconium, Zinc, Ruthenium, Rhodium, Palladium A metal containing an element selected from radium, osmium, iridium, and silicon, The crystal structure of the silicon-containing layer is, for example, The material may be amorphous, microcrystalline, or polycrystalline.

[0093] Next, as shown in FIG. 4(B), a color conversion layer CCR is formed on the light emitting diode 110a. Furthermore, it is preferable to form a red colored layer CFR on the color conversion layer CCR.

[0094] The color conversion layer CCR has a function of converting blue light into red light. It can be provided in contact with the light emitting diode 110a. An insulating layer may be provided between the color conversion layer CCR.

[0095] A blue colored layer may be formed on the light emitting diode 110b. If the blue colored layer is not provided, the purity of blue light can be increased. It can be simplified.

[0096] The color conversion layer uses phosphors and quantum dots (QDs). In particular, quantum dots have a narrow emission spectrum peak width and emit light with good color purity. This makes it possible to improve the display quality of the display device.

[0097] The color conversion layer can be formed by a droplet ejection method (for example, an inkjet method), a coating method, an imprint method, or various methods. It can be formed by using a printing method (screen printing, offset printing, etc.). A color conversion film such as a dot film may also be used.

[0098] When processing the film that will become the color conversion layer, it is preferable to use a photolithography method. In the photolithography method, a resist mask is formed on the thin film to be processed, and then etching is performed. The thin film is processed by etching or the like, and the resist mask is removed. After the film is formed, exposure and development are carried out to process the thin film into a desired shape. For example, a thin film is formed using a material in which quantum dots are mixed into photoresist, and then photolithography is performed. By processing the thin film using a lithography method, island-shaped color conversion layers can be formed. .

[0099] The material for forming the quantum dots is not particularly limited, and may be, for example, a Group 14 element, a Group 15 element, or the like. Elements, group 16 elements, compounds consisting of multiple group 14 elements, and elements belonging to groups 4 to 14 Compounds of Group 16 elements and Group 2 elements, Compounds of Group 13 elements and Compounds with Group 15 elements, compounds with Group 13 and Group 17 elements, compounds with Group 14 and Group 1 Compounds with group 5 elements, compounds with group 11 and group 17 elements, iron oxides, titanium oxides , chalcogenide spinels, and various semiconductor clusters.

[0100] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, zinc selenide , zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, gallium nitride Lithium, indium antimonide, gallium antimonide, aluminum phosphide, arsenide Aluminum, aluminum antimonide, lead selenide, lead telluride, lead sulfide, lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium arsenic sulphide, arsenic telluride, antimony sulphide, antimony selenide, antimony telluride, sulphide Bismuth carbide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium , tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide, Aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Calcium, calcium sulfide, calcium selenide, calcium telluride, beryllium sulfide, selenium Beryllium telluride, beryllium sulfide, magnesium selenide, sulfur Germanium sulphide, germanium selenide, germanium telluride, tin sulfide, tin selenide, Tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, copper oxide Nickel, cobalt oxide, cobalt sulfide, iron oxide, iron sulfide, manganese oxide, molybdenum sulfide vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide , silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and zinc and cadmium compounds, indium, arsenic and phosphorus compounds, cadmium, selenium and sulfur compounds Compounds, compounds of cadmium, selenium and tellurium, compounds of indium, gallium and arsenic, Compounds of indium, gallium and selenium, compounds of indium, selenium and sulfur, compounds of copper and indium In addition, compounds of any composition may be used. So-called alloy type quantum dots, which are expressed by a ratio, may also be used.

[0101] Quantum dot structures include core type, core-shell type, and core-multishell type. In addition, quantum dots have a high proportion of surface atoms, which makes them highly reactive and prone to aggregation. Therefore, a protective agent or a protective group is attached to the surface of the quantum dots. It is preferable that the protecting agent is attached or the protecting group is provided. By this, aggregation can be prevented and solubility in the solvent can be increased. Also, reactivity can be reduced. It is also possible to improve electrical stability by using a high-temperature insulating film.

[0102] As quantum dots become smaller, their band gaps become larger, so they can emit light at the desired wavelength. The size of the crystal is adjusted accordingly so that the light emitted by the crystal is as small as possible. The emission of quantum dots is shifted to the blue side, i.e., to higher energy, so quantum dots By changing the size of the The emission wavelength can be adjusted over a wide range. The size (diameter) of the quantum dot is For example, it is 0.5 nm or more and 20 nm or less, preferably 1 nm or more and 10 nm or less. The narrower the dot size distribution, the narrower the emission spectrum becomes, resulting in better color purity. The shape of the quantum dot is not particularly limited, and may be spherical, rod-shaped, or disk-shaped. Quantum dots in the shape of a rod have a directional property. It has the function of producing light.

[0103] The colored layer is a colored layer that transmits light of a specific wavelength range. For example, red, green, blue, or A color filter that transmits light in the yellow wavelength range can be used. Materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. Some examples include:

[0104] In this manner, the display device 100A shown in FIG. 1 can be manufactured.

[0105] FIG. 5A shows a cross-sectional view of the display device 100B.

[0106] The display device 100B includes an insulating layer 188, an insulating layer 103, a light-shielding layer BM, a colored layer CFB, and a protection layer. The display device 100A differs from the display device 100A in that it has a protective layer 126. The other configurations are the same as those of the display device 100. Same as A.

[0107] In the display device 100B, a conductive layer 187 and an insulating layer 186 are provided on an insulating layer 185. An insulating layer 188 is provided on the conductive layer 187. The height of the upper surface of the conductive layer 187 is The height of the insulating layer 186 is the same as or approximately the same as the height of the upper surface of the insulating layer 186. For example, Then, a conductive layer 187 is formed to fill the opening, and then a planarization process is performed. The height of the upper surface of the conductive layer 187 and the height of the upper surface of the insulating layer 186 can be made uniform. 88 has an opening that reaches the conductive layer 187, and the conductive layer 189 is formed inside the opening. It is embedded.

[0108] The display device 100B has an insulating layer 103 between the light emitting diode 110a and the color conversion layer CCR. The insulating layer 103 may be, for example, the above-mentioned peeling layer or the light-emitting diodes 110a and 110b. The protective layer is designated as 10b.

[0109] It is preferable that a light-shielding layer BM is provided between adjacent pixels. A light-shielding layer BM is provided on the insulating layer 103, and covers the ends of the light-shielding layer BM and the light-emitting diodes. A color conversion layer CCR is provided at a position overlapping with the gate 110a, and covers the end of the light blocking layer BM. In this example, a colored layer CFB is provided at a position overlapping with the light emitting diode 110b. By providing the optical layer BM, for example, the light emitted by the light emitting diode 110a is reflected by the color conversion layer CC The light is incident on the display device 100 through the protective layer 102, the insulating layer 103, etc., without passing through the R or colored layer CFR. This can suppress the phenomenon of the particles being ejected outside of B.

[0110] In the display device 100B, a blue coloring layer CFB is provided on the light emitting diode 110b. The light emitted by the light emitting diode 110b of the blue pixel is colored blue by the color layer CFB. The purity of the light is increased and the light is emitted to the outside of the display device 100B.

[0111] A protective layer 126 may be provided to cover the color conversion layer and the coloring layer. Resins such as acrylic resin, polyimide resin, epoxy resin, silicone resin, and silicon oxide resin are used. Silicon, silicon oxide nitride, silicon nitride oxide, silicon nitride, aluminum oxide, etc. The protective layer 126 may be made of a film such as a resin film. A room may also be used.

[0112] FIG. 5B shows a cross-sectional view of the display device 100C.

[0113] In the display device 100C, the channel length of the transistor 120a and the transistor 120b is The other configurations are the same as the display device 100A.

[0114] A transistor 120a for driving the light emitting diode 110a and a light emitting diode 110b are The driving transistor 120b is a transistor having a size, a channel length, a channel width, and a , and structure, etc. may be different from each other.

[0115] Depending on the amount of current required to emit light at the desired brightness, the transistors are switched on and off for each sub-pixel color. The channel length and / or channel width of the transistor may be varied.

[0116] FIG. 6 shows a cross-sectional view of the display device 100D.

[0117] The display device 100D includes a transistor having a channel forming region on a substrate 131. A transistor having a channel forming region in a metal oxide (transistor 130a, 130b) and The semiconductor device has a first insulating film and a second insulating film (transistors 120a, 120b) stacked thereon.

[0118] A single crystal silicon substrate is suitable for the substrate 131. A transistor having silicon in a channel formation region (hereinafter also referred to as a Si transistor) and a transistor using a metal oxide for the channel formation region (hereafter referred to as OS transistor). It is preferable that the compound has both the above-mentioned and the above-mentioned.

[0119] The transistors 130a and 130b are formed by a conductive layer 135, an insulating layer 134, an insulating layer 136, and a pair of The low resistance region 133 is a conductive layer 135 that functions as a gate. The insulating layer 134 is , which is located between the conductive layer 135 and the substrate 131 and functions as a gate insulating layer. The pair of low-resistance insulating films 6 are provided to cover the side surfaces of the conductive layer 135 and function as side walls. The resistor region 133 is a region in the substrate 131 that is doped with impurities. One serves as the source of the transistor and the other serves as the drain of the transistor.

[0120] In addition, an element isolation layer is formed between two adjacent transistors so as to be embedded in the substrate 131. A layer 132 is provided.

[0121] An insulating layer 139 is provided over the transistors 130a and 130b. A conductive layer 138 is provided through the conductive layer 137 embedded in the opening of the insulating layer 139. The conductive layer 138 is electrically connected to one of the pair of low resistance regions 133. The layer 137 is a plate that electrically connects the conductive layer 138 to one of the pair of low resistance regions 133. In addition, an insulating layer 141 is provided to cover the conductive layer 138. The conductive layer 138 and the conductive layer 142 are provided as wirings. In addition, an insulating layer 143 and an insulating layer 152 are provided to cover the conductive layer 142, The transistors 120a and 120b are provided on the insulating layer 152. The stacked structure up to the color layer CFR is the same as that of the display device 100A, and therefore detailed description thereof will be omitted. .

[0122] The transistors 120a, 120b, 130a, and 130b are transistors that constitute a pixel circuit. and a driver circuit (gate driver and source driver) for driving the pixel circuit. It can be used as a transistor constituting one or both of the transistors. The controllers 120a, 120b, 130a, and 130b configure various circuits such as an arithmetic circuit and a memory circuit. The transistor can be used to form a

[0123] For example, the transistors in the pixel circuit and the gate driver are OS transistors. The transistors 120a and 120b are used, and the source driver transistors are Si transistors. Alternatively, the pixel circuit may include transistors 130a and 130b each having a The transistors 120a and 120b are S transistors. The transistors of the switch driver are Si transistors 130a and 130b. can be used.

[0124] With this configuration, not only the pixel circuit but also the driver circuit etc. can be placed directly under the light-emitting diode. Therefore, the display device can be formed more simply than when a driving circuit is provided outside the display unit. It is possible to realize a display device with a narrow frame (a narrow non-display area). can be done.

[0125] As described above, the display device of one embodiment of the present invention includes a plurality of light-emitting diodes and a plurality of transistors. Since the substrate and the substrate can be bonded at the same time, the manufacturing cost of the display device can be reduced and the yield can be increased. In addition, the micro LED and metal oxide transistors can be used By combining the above, a display device with reduced power consumption can be realized.

[0126] [Display device configuration example 2] FIG. 7A shows a cross-sectional view of the display device 100E, and FIG. 7B shows a cross-sectional view of the display device 100F. The surface view is shown.

[0127] The display device 100E and the display device 100F each have a light emitting diode (LED) directly mounted on a circuit board. It is produced by forming

[0128] Here, it is difficult to fabricate the light-emitting diodes of each color on the same substrate due to differences in lattice constants. In the display device of the present embodiment, one type of light emitting diode is combined with a color conversion layer. Therefore, the light-emitting diodes fabricated on the substrate are Therefore, the display device of the present embodiment can be realized by directly mounting light emitting diodes on a circuit board. It can be fabricated by forming a

[0129] Configuration from the substrate 151 to the conductive layer 189 in the display device 100E and the display device 100F 2B. Therefore, detailed description thereof will be omitted.

[0130] On the conductive layer 189 and the insulating layer 186, an insulating layer 122 and an electrode 1 of the light-emitting diode are formed. 12 and an electrode 116 are provided.

[0131] For example, the electrode 112 of the light-emitting diode 110c is in contact with the conductive layer 189. This electrically connects the transistor 120a and the light emitting diode 110c. In the display device 100E and the display device 100F, the electrode 11 2 functions as a pixel electrode for the light-emitting diodes 110c and 110d. serves as a common electrode for the light emitting diodes 110c and 110d.

[0132] Here, the electrodes 112, 116 and the insulating layer 122 are aligned or at the same height. For example, an opening is provided in the insulating layer 122, and the electrode 1 is formed so as to fill the opening. After forming the electrodes 112 and 116, a planarization process is performed to form the electrodes 112 and 116 and the insulating layer 112 and 116. As a result, the height of the upper surface of the semiconductor layer 113 can be made uniform. , a light emitting layer 114, and a semiconductor layer 115 can be formed.

[0133] The semiconductor layer 113 is provided on the electrode 112. The semiconductor layer 113 is electrically connected to the electrode 112. The light emitting layer 114 is provided on the semiconductor layer 113. A semiconductor layer 115 is provided on the substrate 110 .

[0134] An insulating layer 123 is provided so as to cover the semiconductor layer 113, the light emitting layer 114, and the semiconductor layer 115. The insulating layer 123 has an opening reaching the semiconductor layer 115 and an opening reaching the electrode 116. The openings are provided with conductive layers 124a and 124b embedded therein. do.

[0135] A conductive layer 127 is provided over the conductive layers 124 a and 124 b and the insulating layer 123 . The conductive layer 124a functions as a plug that electrically connects the semiconductor layer 115 and the conductive layer 127. The conductive layer 124b functions as a plug that electrically connects the conductive layer 127 and the electrode 116. The semiconductor layer 115 functions as a conductive layer 124a, a conductive layer 127, and a conductive layer 124b. The electrode 116 is electrically connected thereto via a contact 116 .

[0136] A light-shielding layer BM is provided between adjacent pixels. A light-shielding layer BM is provided on the edge layer 123 to cover the edge of the light-shielding layer BM and to form a light-emitting diode A color conversion layer CCR is provided at a position overlapping with 110c, and a red coloring layer is provided on the color conversion layer CCR. An example in which a CFR is provided is shown. By providing a light-shielding layer BM, for example, a light-emitting diode The light emitted from 110c passes through the insulating layer 123 and the like without passing through the color conversion layer CCR or the colored layer CFR. This makes it possible to suppress the phenomenon of the light being emitted to the outside of the display devices 100E and 100F. do.

[0137] As shown in FIG. 7B, an opening surrounding the light emitting diode is provided in the insulating layer 123. A light-shielding layer BM may be embedded in the opening. This prevents the light emitted by the light-emitting diode from being reflected by the adjacent light-emitting diode. This prevents the light from reaching adjacent pixels, thereby improving the display quality of the display device 100F. .

[0138] [Display device configuration example 3] The structure and manufacturing method of the display device 100G will be described with reference to FIGS. 8(A) and 8(B). In addition, the configuration and the structure of the display device 100H will be described with reference to FIG. 8(A), FIG. 9(A), and FIG. 9(B). The manufacturing method will be described.

[0139] The display device 100G and the display device 100H each have a transistor directly mounted on the LED substrate. The circuit is manufactured by forming a circuit including the above.

[0140] As described above, the display device of the present embodiment combines one type of light emitting diode with a color conversion layer. By combining the light emitting diodes of all the pixels, a full color display is achieved. Therefore, a transistor or the like can be further formed on the substrate. A circuit including the transistor can be directly formed, and the display device of this embodiment mode can be manufactured.

[0141] In the production of the display device 100G and the display device 100H, first, as shown in FIG. A laminated structure is formed from the substrate 101 to the conductive layer 187 .

[0142] Configuration from the substrate 101 to the protective layer 102 in the display device 100G and the display device 100H 2A. Since this is similar to the LED substrate 150A shown in FIG. 2A, detailed description thereof will be omitted.

[0143] An insulating layer 104 is provided on the protective layer 102. The insulating layer 104 is provided with a semiconductor layer 11. 3 and an opening reaching the semiconductor layer 115 are provided, and the inside of the opening Conductive layers 118a and 118b are embedded in the insulating layer 118.

[0144] The conductive layers 118a and 118b and the insulating layer 104 are arranged so that their upper surfaces are at the same height or approximately the same height. As a result, the electrodes 112 and 116, as well as the Transistors 120a, 120b, etc. can be formed.

[0145] On the insulating layer 104, electrodes 112 and 116 of the light emitting diode and an insulating layer 106 are provided. The conductive layer 118a serves as a plug that electrically connects the semiconductor layer 113 and the electrode 112. The conductive layer 118b electrically connects the semiconductor layer 115 and the electrode 116. It acts as a plug.

[0146] In the display device 100G and the display device 100H, the electrode 116 is a light-emitting diode. The electrode 112 functions as a pixel electrode for the light-emitting diodes 110a and 110b. It functions as a common electrode for 10a and 110b.

[0147] The electrodes 112, 116 and the insulating layer 106 are aligned or approximately aligned in height. This allows the transistors 120a, 120b, etc. to be formed on a flat surface. This can be done.

[0148] An insulating layer 108 and an insulating layer 152 are provided on the insulating layer 106, the electrode 112, and the electrode 116. The insulating layer 108 and the insulating layer 152 are provided with openings reaching the electrodes 116. A plug that electrically connects the electrode 116 and the transistor is buried inside the opening. The plug is formed by the conductive layer 107 contacting the side surface of the opening and the top surface of the electrode 116. It is preferable that the conductive layer 107a is embedded inside the conductive layer 107b. At this time, the conductive layer 107b is made of a conductive material in which hydrogen and oxygen are unlikely to diffuse. It is preferable.

[0149] The structure from the insulating layer 152 to the conductive layer 187 in the display device 100G and the display device 100H The structure is the same as that shown in FIG. 2B except that the conductive layer 161a and the conductive layers 184c and 184d are included. It is similar to the circuit board 150B.

[0150] The conductive layer 161a is formed of the same material and in the same process as the conductive layer 161 of the transistor. The conductive layer 184c can be formed of the same material and in the same process as the conductive layer 184a. The conductive layer 184d can be formed of the same material and in the same process as the conductive layer 184b. It is possible.

[0151] Insulating layer 163, insulating layer 164, insulating layer 181, insulating layer 182, insulating layer 183, and insulating layer The conductive layer 185 has an opening that reaches the conductive layer 161a. A plug is embedded to electrically connect the conductive layer 161a to the conductive layer 187. , the conductive layer 184c and the conductive layer 184d described above.

[0152] One of the pair of conductive layers 166 of the transistor includes a conductive layer 184a, a conductive layer 184b, and a conductive layer 187, conductive layer 184c, conductive layer 184d, conductive layer 161a, conductive layer 107a, and conductive It is electrically connected to the electrode 116 via the layer 107b.

[0153] In the display device 100G, after forming the laminated structure shown in FIG. 8(A), as shown in FIG. 8(B), Further, a color conversion layer CCR is formed at a position overlapping the light emitting diode 110a. It is produced by forming a red colored layer CFR on the CCR.

[0154] In addition, an insulating layer 186 may be provided on the insulating layer 183, and a color conversion layer may be provided on the insulating layer 186. A CCR may be formed.

[0155] As shown in FIG. 8B, the light emitted by the light-emitting diode 110a is reflected by the protective layer 102, the insulating layer 103, and the insulating layer 104. The light is incident on the color conversion layer CCR through a plurality of insulating layers from 104 to the insulating layer 186, and is converted into color. The CCR layer converts blue to red, and the colored layer CFR enhances the purity of the red light. The light is then emitted to the outside of the display device 100G.

[0156] As shown in FIG. 8B, the blue light emitted by the light-emitting diode 110b is reflected by the protective layer 102, The display device 100G is connected to the outside through a plurality of insulating layers from the insulating layer 104 to the insulating layer 186. It is ejected.

[0157] The display device 100H shown in FIG. 9B is a display device including a substrate 1 after forming the laminated structure shown in FIG. 01 is peeled off (FIG. 9(A)), and a coloring layer is attached to the surface exposed by the peeling using an adhesive layer 192. It can be produced by bonding a substrate 191 provided with a CFR and a color conversion layer CCMR. do.

[0158] The adhesive layer 192 may be a light-curing adhesive such as an ultraviolet-curing adhesive, a reaction-curing adhesive, or a heat-curing adhesive. Various curing adhesives such as anaerobic adhesives and adhesive sheets can be used. It's fine.

[0159] In addition, the colored layer CFR, the color conversion layer CCMR, etc. are attached to the substrate 101 using the adhesive layer 192. The substrate 191 may be attached to the substrate 101. In other words, the substrate 101 does not need to be peeled off. .

[0160] At this time, it is preferable to thin the thickness of the substrate 101 by polishing or the like. The light extraction efficiency of the light emitting diode can be improved. This also makes it possible to reduce the size and weight of the vehicle.

[0161] As shown in FIG. 9B, the light emitted by the light emitting diode 110a is guided through the adhesive layer 192. , which is incident on the color conversion layer CCR, is converted from blue to red by the color conversion layer CCR, and is then transferred to the colored layer CF The purity of red light is increased by R, and the red light is emitted to the outside of the display device 100H.

[0162] As shown in FIG. 9B, the blue light emitted by the light emitting diode 110b penetrates the adhesive layer 192. The light is then emitted to the outside of the display device 100H.

[0163] As described above, the display device of one embodiment of the present invention includes a plurality of light-emitting diodes and a plurality of transistors. Alternatively, the display device according to one embodiment of the present invention can be attached to the circuit board. The light-emitting diode can be directly formed on the substrate. Display devices are manufactured by forming transistors and other elements directly on a substrate on which light-emitting diodes are formed. Therefore, it is possible to reduce the manufacturing cost of the display device and improve the yield. This can be done.

[0164] In addition, by combining micro LEDs with metal oxide transistors, the consumption A display device with reduced power consumption can be realized.

[0165] This embodiment mode can be appropriately combined with other embodiment modes. In the case where a plurality of configuration examples are shown in one embodiment, the configuration examples may be appropriately combined. It is possible to do this.

[0166] (Embodiment 2) In this embodiment, a structure of a transistor that can be used in a display device of one embodiment of the present invention will be described. An example will be described with reference to FIGS.

[0167] The transistor of this embodiment mode can be made small in size, and therefore the resolution of a display device can be improved. In addition, the present invention can be easily applied to electronic devices having relatively small display units.

[0168] In this specification, a transistor is defined as a transistor that includes at least a gate, a drain, and a source. Both are elements with three terminals. And the drain (drain terminal, drain region, A transistor is placed between the source (source terminal, source region, or source electrode) and the The device has a region in which a channel is formed (channel formation region), and In this specification, a current can flow between the source and the drain. In this specification, the channel formation region refers to a region through which current mainly flows.

[0169] The functions of the source and drain may differ depending on whether transistors of different polarities are used or in the circuit operation. In the case where the direction of the current changes, the positions may be reversed. In some cases, the terms source and drain may be used interchangeably.

[0170] The channel length is, for example, the length of the semiconductor (or transistor) in a top view of the transistor. The area where the gate electrode overlaps with the semiconductor (the part through which current flows when the semiconductor is on) , or the source (source region or source electrode) and drain in the channel forming region This refers to the distance between the drain region or drain electrode of a transistor. In this case, the channel length does not necessarily have the same value in all regions. The channel length of a transistor may not be determined to a single value. The channel length is a value, a maximum value, a minimum value, or an average value in the channel forming region. value.

[0171] The channel width is, for example, the width of the semiconductor (or transistor) in a top view of the transistor. The area where the gate electrode overlaps with the semiconductor (the part through which current flows when the semiconductor is on) Or, in the channel formation region, the channel shape in the vertical direction based on the channel length direction The length of the region in which the channel is formed is called the channel width. In other words, the channel width of a transistor is limited to one value. Therefore, in this specification, the channel width is defined as the width of the channel forming region. The value may be any one of the values, the maximum value, the minimum value, or the average value.

[0172] In this specification and the like, depending on the structure of the transistor, the channel may not actually be formed. The channel width in the region where the transistor is The channel width shown in the top view of For example, if the gate electrode covers the side of the semiconductor, the effective channel The width may become larger than the apparent channel width, and the effect may become unnegligible. For example, in a transistor in which the gate electrode covers the side of the semiconductor, In some cases, the proportion of the channel formation region that is formed may become large. In that case, the apparent channel Therefore, the effective channel width is larger than the channel width.

[0173] In such a case, it may be difficult to estimate the effective channel width through actual measurement. For example, to estimate the effective channel width from the design value, the shape of the semiconductor is known. Therefore, if the shape of the semiconductor is not known precisely, the effective It is difficult to measure channel width accurately.

[0174] In this specification, when the term "channel width" is used, it may refer to the apparent channel width. In this specification, when the term "channel width" is used, it means an effective channel width. In addition, the channel length, channel width, effective channel width, apparent channel The channel width etc. are measured by cross-sectional TEM (Transmission Electron Microscopy). Values ​​can be determined by analyzing fluoroscopic images, etc.

[0175] The impurities in a semiconductor are, for example, substances other than the main components that make up the semiconductor. Elements with a concentration of less than 0.1 atomic percent can be considered impurities. For example, This can cause problems such as an increase in the density of defect levels in semiconductors and a decrease in crystallinity. When the semiconductor is an oxide semiconductor, the impurities that change the characteristics of the semiconductor include, for example, , Group 1 elements, Group 2 elements, Group 13 elements, Group 14 elements, Group 15 elements, oxide semiconductors There are transition metals other than the main component, such as hydrogen, lithium, sodium, silicon, These include boron, phosphorus, carbon, and nitrogen. Water can also act as an impurity. For example, impurities may cause oxygen vacancies (V O ) may be formed. be.

[0176] In this specification and the like, the term "insulator" may be replaced with an insulating film or an insulating layer. The term "conductor" can also be replaced with "conductive film" or "conductive layer." The term "semiconductor" can be replaced with "semiconductor film" or "semiconductor layer."

[0177] In this specification, the term "metal oxide" refers to a metal oxide in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductor (also called OS) For example, when a metal oxide is used for the semiconductor layer of a transistor, the metal An oxide may be referred to as an oxide semiconductor. In other words, the transistor may have a metal oxide or an oxide semiconductor. do.

[0178] FIG. 10 illustrates a semiconductor device including a transistor 200A. 10(B) to 10(D) are top views of the body device in FIG. 10(A). 10(a) and 10(b) are cross-sectional views taken along dashed lines A1-A2, A3-A4, and A5-A6. FIG. 10B) can also be considered as a cross-sectional view of the transistor 200A in the channel length direction. It can also be said that this is a cross-sectional view of the transistor 200A in the channel width direction. Some elements have been omitted for clarity of the illustration.

[0179] The semiconductor device shown in FIG. 10 includes an insulator 212 on a substrate (not shown) and an insulating layer 213 on the insulator 212. A rim 214, an insulator 216 on the insulator 214, and a rib 216 on the insulator 214 and on the insulator 216. A transistor 200A, an insulator 254 on the transistor 200A, and a an insulator 280, an insulator 282 on the insulator 280, and an insulator 283 on the insulator 282; The insulator 212, the insulator 214, the insulator 216, the insulator 254, the insulator 280, The insulators 282 and 283 function as interlayer films. The conductor 240 (the conductor 240a and the conductor 240b) and the insulator 241 (the insulator 241a and insulator 241b), and conductor 246 (conductor 241b) on insulator 283 and conductor 240 46a and conductor 246b), an insulator 286 on the conductor 246 and on the insulator 283, The conductor 240a and the conductor 240b are connected to the transistor 200A and the The insulator 241 is electrically connected to the conductor 240 and functions as a plug. The conductor 246a is electrically connected to the conductor 240a and functions as a wiring. Similarly, the conductor 246b is electrically connected to the conductor 240b and functions as a wiring. .

[0180] The insulators 254, 280, 282, and 283 are in contact with the side walls of the openings. An edge 241a is provided, and the first conductor of the conductor 240a is in contact with the side surface of the insulator 241a. is provided, and a second conductor of the conductor 240a is provided further inside. The insulators 254, 280, 282, and 283 are in contact with the side walls of the openings. A first conductor of the conductor 240b is provided in contact with the side surface of the insulator 241b. The second conductor 240b is provided on the inner side. The height of the upper surface of the insulator 283 in the area overlapping with the conductor 246 is In FIG. 10B, the first conductor of the conductor 240 and the conductor 24 Although the second conductor 240 is shown as having a laminated structure, the conductor 240 has a single layer structure. In this specification and the like, the structure may have a laminated structure. In some cases, ordinal numbers are assigned to indicate the order of formation to distinguish them.

[0181] The transistor 200A includes a conductor 205 ( Conductor 205a and conductor 205b) and insulator 216 on conductor 205 22, an insulator 224 on the insulator 222, an oxide 230a on the insulator 224, and an oxide The oxide 230b on the oxide 230a and the oxide 243 (oxide 243a and and oxide 243b) and oxide 230c, conductor 242a on oxide 243a, and oxide Conductor 242b on conductor 243b, oxide 230d on oxide 230c, and oxide 230 d, and a conductor located on the insulator 250 and overlapping a part of the oxide 230c. 260 (conductor 260a and conductor 260b). The oxide 230c has The side of the oxide 243a, the side of the oxide 243b, the side of the conductor 242a, and the conductor 24 The insulator 282 is in contact with the side surface of the conductor 260, the insulator 250, the oxide 23, and the like. 0d, oxide 230c, and insulator 280.

[0182] An opening is provided in the insulator 280 and the insulator 254 that reaches the oxide 230b. An oxide 230c, an oxide 230d, an insulator 250, and a conductor 260 are disposed in the mouth. In addition, in the channel length direction of the transistor 200A, the conductor 242a and the oxide A conductor 260 is disposed between the oxide 243a and the conductor 242b and the oxide 243b. 50, oxide 230d, and oxide 230c are provided. The insulator 250 is a conductor The conductor 260 has a side surface and a bottom surface. The oxide 230c is in contact with the oxide 230b, and the oxide 230d and the insulator 250 are interposed therebetween. Then, through the region overlapping the side of the conductor 260, the oxide 230d, and the insulator 250, and a region overlapping the bottom surface of the conductor 260.

[0183] The oxide 230 is formed by an oxide 230a on the insulator 224 and an oxide 230 on the oxide 230a. b, and an oxide layer 230 b disposed on the oxide layer 230 b and at least a portion of which is in contact with the oxide layer 230 b. 230c and oxide 230d on oxide 230c.

[0184] In the transistor 200A, the oxide 230 is made up of an oxide 230a, an oxide 230b, The oxide 230c and the oxide 230d are stacked in four layers. The oxide 230 may be a single layer structure or a multilayer structure. A single layer of oxide 230b, a two-layer structure of oxide 230a and oxide 230b, an oxide 230b and oxide a two-layer structure of oxide 230a, oxide 230b, and oxide 230c; A three-layer structure of oxide 230a, oxide 230b, and oxide 230d, or a five-layer structure or more Alternatively, the oxide 230a, the oxide 230b, the oxide 230c, and oxide 230d may each have a single layer structure or a multilayer structure.

[0185] Conductor 260 serves as the first gate (top gate) electrode, and conductor 205 serves as the second gate (top gate) electrode. The insulator 250, the insulator 224, and the insulator 226 function as a gate (back gate) electrode of the second gate electrode. The insulator 222 functions as a gate insulator. The conductor 242b serves as one of the source and drain electrodes. The oxide 230 functions as a channel forming region.

[0186] The transistor 200A includes an oxide 230 (oxide 230a, oxide The oxide 230b, oxide 230c, and oxide 230d) are metal oxides that function as semiconductors. It is preferable to use a material (oxide semiconductor).

[0187] The metal oxide that functions as a semiconductor preferably has a band gap of 2 eV or more. It is more preferable that the band gap is 2.5 eV or more. By using an oxide, the off-state current of a transistor can be reduced.

[0188] A transistor using an oxide semiconductor for a channel formation region has a leakage current in a non-conducting state. Since the off-state current is extremely small, a semiconductor device with low power consumption can be provided. Since semiconductors can be deposited by sputtering or other methods, they can be used to construct highly integrated semiconductor devices. The present invention can be used for a transistor that forms a

[0189] The oxide 230 may be, for example, an In-M-Zn oxide having indium, element M, and zinc. carbides (element M is aluminum, gallium, yttrium, tin, copper, vanadium, beryllium , boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum Tantalum, Cerium, Neodymium, Hafnium, Tantalum, Tungsten, Magnesium, Cobalt It is preferable to use a metal oxide such as one or more selected from the group consisting of fluorine, arsenic, tungsten, and the like. The material 230 is In-Ga oxide, In-Zn oxide, or indium oxide. This is also fine.

[0190] In a transistor using an oxide semiconductor, impurities and Oxygen deficiency (V O ) may cause electrical characteristics to fluctuate and reduce reliability. Impurities in the oxide semiconductor include, for example, hydrogen, nitrogen, alkali metals, alkaline earth metals, and the like. Metals include iron, nickel, silicon, etc.

[0191] In particular, hydrogen contained in oxide semiconductors reacts with oxygen that bonds to metal atoms to produce HO and In some cases, oxygen vacancies may be formed. In addition, hydrogen near the oxygen vacancies may enter the oxygen vacancies. Defect (V O H) and generate electrons that act as carriers. Some of the atoms in the oxide bond with the metal atoms, generating electrons that act as carriers. Therefore, a transistor using an oxide semiconductor containing hydrogen has a normally-on characteristic. (Even if no voltage is applied to the gate electrode, a channel exists and current flows through the transistor.) characteristics).

[0192] A defect in which hydrogen has entered an oxygen vacancy (V O H) can function as a metal oxide donor. However, it is difficult to quantitatively evaluate the defects. is sometimes evaluated based on the carrier concentration rather than the donor concentration. Assuming that no electric field is applied, rather than the donor concentration, as a parameter of the metal oxide, In other words, the "carrier concentration" described in this specification and the like may be used. can be rephrased as "donor concentration." "Carrier concentration" can be rephrased as "carrier density."

[0193] From the above, it is expected that hydrogen and oxygen vacancies will be reduced as much as possible in the channel formation region in the oxide semiconductor. Specifically, in the channel forming region of the oxide 230, Secondary Ion Mass Spectroscopy (SIMS) The hydrogen concentration obtained by the NMR spectroscopy is expressed as 1×10 20 atoms / cm 3 Less than, preferred Or 1×10 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 In addition, oxidation The channel formation region in the semiconductor is formed by reducing the carrier concentration and becoming i-type (intrinsic) or It is preferable that the quality is i-type.

[0194] The oxide 230 preferably contains at least indium or zinc. In addition to these, aluminum, gallium, iridium, and zinc are preferably included. It is preferable that the alloy contains tritium, tin, etc. Also, boron, titanium, iron, nickel, etc. Kel, Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium One selected from the group consisting of nium, tantalum, tungsten, magnesium, and cobalt, may contain multiple types.

[0195] In this specification, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). It may also be called tetrahydrofuran (tetrahydrofuran) oxynitride.

[0196] Regarding the metal oxide (oxide semiconductor) that can be used for the oxide 230, This is explained in detail in Section 4.

[0197] The oxide 230 preferably has a layered structure of multiple oxides with different chemical compositions. In addition, the oxide 230 is a product of a plurality of oxides having a common element other than oxygen (main component). It is preferred that it has a layered structure.

[0198] Specifically, in the metal oxide used for the oxide 230a or the oxide 230d, The atomic ratio of element M to oxide 230b or oxide 230c is In the above, the atomic ratio of element M to In is preferably larger than the atomic ratio of element M to In. The larger the atomic ratio of the impurities and oxygen, the easier it is to suppress the diffusion of impurities and oxygen. By having the oxide 230a under the oxide 230b, the oxide 230a is formed below the oxide 230a. The diffusion of impurities from the structure to the oxide 230b can be suppressed. By having an oxide 230d on the object 230c, the oxide 230d is formed above the oxide 230d. The diffusion of impurities from the structure into the oxide 230c can be suppressed.

[0199] In other words, the element M in the metal oxide used for the oxide 230b or the oxide 230c The atomic ratio of In to the metal oxide used for the oxide 230a or the oxide 230d is In this case, the atomic ratio of the carrier is preferably larger than the atomic ratio of In to the element M. The main path of the oxide 230b, the oxide 230c or its vicinity, for example, the oxide 23 The oxide 230b and the oxide 230c are the interface between the oxide 230b and the oxide 230c. Oxide 230b and oxide 230c have a common element (main component) other than the element. Since the defect level density at the interface with the SiC layer can be reduced, the carrier transport due to interface scattering can be suppressed. The effect on conductivity is small, and a high on-current can be obtained.

[0200] In order to make the oxide 230c the main path of the carriers, the oxide 230c must be mainly The atomic ratio of indium to the metal elements in the oxide 230b is It is preferable that the atomic ratio of indium to the metal element is greater than the atomic ratio of indium. By using a metal oxide with a high content in the channel formation region, the on-state current of the transistor can be reduced. It can be increased.

[0201] In order to make the oxide 230c the main carrier path, the conduction band minimum of the oxide 230c must be is lower than the vacuum level from the conduction band minimum of the oxide 230a, the oxide 230b, and the oxide 230d. In other words, the electron affinity of oxide 230c is preferably It is preferable that the electron affinity of oxide 30a, oxide 230b, and oxide 230d be greater than that of oxide 30b.

[0202] It is preferable that the oxide 230b and the oxide 230c each have crystallinity. The oxide 230b and the oxide 230c are CAAC-OS (c-axis a-CdO2) films, which will be described later. ligated crystalline oxide semiconductor) It is preferable to use the oxide 230d. Also, the oxide 230d may have crystallinity.

[0203] By using the CAAC-OS for the oxide 230b and the oxide 230c, In the region where the channel is formed, it is possible to reduce impurities and oxygen vacancies. This suppresses fluctuations in electrical characteristics, realizing stable electrical characteristics and improving reliability. It is possible to provide a transistor having such a structure.

[0204] In addition, the extraction of oxygen from the oxide 230b by the source electrode or the drain electrode is suppressed. This can suppress the extraction of oxygen from the oxide 230b even when a heat treatment is performed. Since the transistor 200A can be manufactured at high temperatures ( It is stable against the so-called thermal budget.

[0205] In addition, CAAC-OS has the property of easily transferring oxygen in the direction perpendicular to the c-axis of the CAAC structure. Therefore, the oxygen contained in the oxide 230c can be efficiently supplied to the oxide 230b. It is possible.

[0206] CAAC-OS has a highly crystalline and dense structure and is free of impurities and defects (such as oxygen vacancies). In particular, after the metal oxide is formed, the metal oxide becomes polycrystallized. By heat-treating at a temperature not exceeding 400℃ and not exceeding 600℃, the CAAC This allows the -OS to have a more crystalline and dense structure. By increasing the density of the CAAC-OS, the diffusion of impurities or oxygen in the CAAC-OS can be improved. This can be reduced.

[0207] The oxide 230 is a region between the channel formation region of the transistor 200A and the and a pair of low resistance regions (a source region and a drain region) provided so as to The channel forming region at least partially overlaps with the conductor 260. The conductive material 242 (conductive material 242a and conductive material 242b) is provided, and a channel is formed. A region having a lower resistance than the region is formed adjacent to the conductor 242 .

[0208] The source and drain regions have low oxygen concentrations and do not contain impurities such as hydrogen, nitrogen, and metal elements. The source region is a region where the carrier concentration is increased and the resistance is reduced due to the presence of The drain region and the drain region have a higher carrier concentration and a lower resistance than the channel formation region. The channel formation region has a higher oxygen concentration than the source region and the drain region. This is a region with a low carrier concentration and high resistance due to a high surface area and a low impurity concentration.

[0209] In the oxide 230, it may be difficult to clearly detect the boundaries between the regions. The concentrations of impurities such as hydrogen, nitrogen, and metal elements detected in the In other words, the region close to the channel formation region may have a continuous change. The concentration of impurities such as hydrogen, nitrogen, and metal elements should be reduced as the temperature approaches the upper limit.

[0210] In order to increase the oxygen concentration in the channel formation region, a By providing an insulator containing oxygen to be desorbed (also called excess oxygen) and performing heat treatment, the insulator The structure can be such that oxygen can be supplied from the body to the oxide semiconductor. The oxygen vacancies in the channel formation region can be repaired by the supplied oxygen. Furthermore, the supplied oxygen reacts with hydrogen remaining in the oxide semiconductor, This allows the oxide semiconductor to absorb V. O The formation of H can be suppressed.

[0211] However, if an excessive amount of oxygen is supplied to the source or drain region, The carrier concentration in the drain region is reduced, resulting in a reduction in the on-state current of the transistor 200A. In addition, the source region or drain region may be damaged. The oxygen supplied to the drain region varies across the substrate surface, causing semiconductor devices with transistors to This results in variations in the characteristics of the device.

[0212] Therefore, in the oxide semiconductor, the carrier concentration in the channel formation region is reduced, and the oxide semiconductor becomes an i-type It is preferable that the source region and the drain region are made to be i-type or substantially i-type. It is preferable that the carrier concentration is high and that the oxide semiconductor is n-type. Oxygen is supplied to the formation region, but not to the source and drain regions in an excessive amount. It is preferable to do so.

[0213] For example, the insulator 254 is formed by a sputtering method, so that the insulator 224 is not oxidized. The oxygen implanted in the insulator 224 is then implanted through the oxide 230c. As a result, the oxide 230b occupying most of the channel formation region is 30c and the oxide 230b, selectively supplying oxygen to the region in contact with the oxide 230c. can be done.

[0214] In addition, the oxide 230b is made of CAAC-OS having a dense structure as described above. This can reduce the diffusion of impurities and oxygen in the oxide 230b. The oxygen supplied to the channel forming region of the oxide 230b is transferred to the source region and This can reduce diffusion into the drain region.

[0215] In this manner, oxygen is selectively supplied to the channel formation region, and the i The present invention is also intended to suppress oxygen diffusion into the source and drain regions. The drain region can be kept n-type. This allows the current of the transistor 200A to be This suppresses the variation in the electrical characteristics of the transistor 200A within the substrate surface. It is possible.

[0216] In addition, the oxide 230d is a metal oxide containing a metal element that constitutes the metal oxide used in the oxide 230c. It is preferable to include at least one of the metal elements, and it is more preferable to include all of the metal elements. For example, the oxide 230c may be In-M-Zn oxide, In-Zn oxide, or In As the oxide 230d, In-M-Zn oxide, M-Zn oxide, or Alternatively, an oxide of element M may be used. This allows the oxide 230c and the oxide 230d to be The defect state density at the interface can be reduced.

[0217] In addition, the oxide 230d is a metal oxide that suppresses the diffusion or permeation of oxygen more than the oxide 230c. It is preferable that the oxide 230d is provided between the insulator 250 and the oxide 230c. By this, oxygen contained in the oxide 230c or the insulator 280 diffuses into the insulator 250. Therefore, the oxygen can be prevented from being absorbed by the oxide 230c. In addition, the insulator 250 can efficiently supply the conductor 26 to the conductor 230b. It is possible to inhibit 0 from being oxidized.

[0218] In addition, in the metal oxide used for the oxide 230d, the In content of the metal element that is the main component is The atomic ratio of the metal element that is the main component in the metal oxide used for oxide 230c is By making the atomic ratio of In smaller than that of the insulator 250, the diffusion of In into the insulator 250 is suppressed. Since the insulator 250 functions as a gate insulator, In can be If it gets mixed in with oxide 230c, the transistor characteristics will be impaired. By providing the oxide 230d between the insulator 250, a highly reliable semiconductor device can be provided. It becomes possible to do so.

[0219] Here, the junction of the oxide 230a, the oxide 230b, the oxide 230c, and the oxide 230d In other words, the conduction band minimum changes gradually in the oxide 230a and oxide 2 The conduction band minimum at the junction of oxide 30b, oxide 230c, and oxide 230d is continuously In order to achieve this, the oxide 2 The interface between oxide 30a and oxide 230b, the interface between oxide 230b and oxide 230c, and the interface between oxide 30a and oxide 230b and oxide 230c are shown. The defect level density of the mixed layer formed at the interface between the substrate 230c and the oxide 230d is reduced. stomach.

[0220] For example, oxide 230a and oxide 230b, oxide 230b and oxide 230c, oxide 2 The oxide 30c and the oxide 230d have a common element other than oxygen as the main component, so that the defect level For example, the oxide 230b may be an In-M-Zn mixed layer having a low phase density. In the case of oxides, oxide 230a, oxide 230c, and oxide 230d are In-M -Zn oxide, M-Zn oxide, oxide of element M, In-Zn oxide, indium oxide It is a good idea to use something like:

[0221] Specifically, the oxide 230a is In:M:Zn=1:3:4 [atomic ratio] or Compositions in the vicinity of this range, or In:M:Zn=1:1:0.5 [atomic ratio] or in the vicinity of this range The oxide 230b may have a composition of In:M:Zn=1. :1:1 [atomic ratio] or a composition close to that, or In:M:Zn=4:2:3 [atomic ratio] The metal oxide having a composition of 0.1 to 0.5 wt % or a composition of about 0.1 to 0.5 wt % may be used. The composition is In:M:Zn=4:2:3 [atomic ratio] or close to that. n=5:1:3 [atomic ratio] or a composition close to that, or In:M:Zn=10:1 :3 [atomic ratio] or a metal oxide having a composition close thereto, or indium oxide is used. In addition, the oxide 230d may have an atomic ratio of In:M:Zn=1:3:4. or a composition close thereto, M:Zn=2:1 [atomic ratio] or a composition close thereto, or Metal oxides with a composition of M:Zn=2:5 [atomic ratio] or close to that, or elements M The oxide may be used. The nearby composition includes the range of the desired atomic ratio by ±30%. It is also preferable to use gallium as the element M.

[0222] The oxide 230a, the oxide 230b, the oxide 230c, and the oxide 230d are configured as described above. By this, the interface between the oxide 230a and the oxide 230b, the interface between the oxide 230b and the oxide 230 The defect level density at the interface between oxide 230c and oxide 230d is reduced. Therefore, the effect of interface scattering on carrier conduction is reduced, and the The transistor 200A can achieve a large on-current and high frequency characteristics.

[0223] In addition, in a cross-sectional view of the transistor in the channel length direction, a groove is provided in the oxide 230b, It is preferable to fill the groove with an oxide 230c having a CAAC-OS. At this time, oxide 230c is disposed so as to cover the inner walls (side walls and bottom surface) of the groove.

[0224] Also, the depth of the grooves in the oxide 230b is equal to or approximately equal to the thickness of the oxide 230c. In other words, the upper surface of the oxide 230c in the region overlapping with the oxide 230b is preferably Preferably, the oxide 230b is disposed in alignment with or approximately in alignment with the interface between the oxide 230b and the oxide 243. For example, when the bottom surface of the insulator 222 is taken as the reference, the oxide 230b and the oxide 243 The difference between the height of the interface and the height of the interface between the oxide 230c and the oxide 230d is It is preferable that the thickness of the oxide 230c is less than or equal to the thickness of the oxide 230c, and more preferable that the thickness of the oxide 230c is less than or equal to half the thickness of the oxide 230c. It is.

[0225] By using the above configuration, the transistor V O Reduces the effects of defects and impurities such as H A channel can then be formed in the oxide 230c. This allows the transistor to It is possible to provide good electrical characteristics. Furthermore, the variation in transistor characteristics is small. As a result, a highly reliable semiconductor device can be provided.

[0226] In addition, impurities at and near the interface between the oxide 230b and the oxide 230c are reduced or Preferably, M is removed. If M is not aluminum, it is particularly preferred that M is not aluminum. Impurities such as silicon and silicon may affect the crystallinity or c-axis alignment of the oxide 230c and the oxide 230b. It is preferable that oxides are reduced or removed because they inhibit the improvement of the tropism. The concentration of aluminum atoms at the interface between 230b and oxide 230c and its vicinity is 2 0.0 atomic % or less is preferable, 1.5 atomic % or less is more preferable, and 1.0 atomic % or less is even more preferable. Preferred.

[0227] Furthermore, impurities such as aluminum and silicon inhibit the improvement of crystallinity or c-axis orientation. The amorphous oxide semiconductor (a-like OS) The region of metal oxide that has become a non-CAAC region is called the non-CAAC region. In the non-CAAC region, it is called the V O A large amount of H is formed, and the transistor Therefore, the non-CAAC region should be reduced or removed. It is preferable that the above is done.

[0228] In contrast, in the oxide 230b and the oxide 230c having the CAAC structure, Since a dense crystal structure is formed, V O H becomes less stable. In the oxygen addition process, excess oxygen is supplied to the oxide 230b and the oxide 230c. In the oxide 230b and the oxide 230c, V O H and V O This can reduce As described above, the oxide 230b and the oxide 230c have a CAAC structure, so that the transistor This can suppress the normally-on state of the transistor.

[0229] As shown in FIG. 10C, in a cross-sectional view of the transistor 200A in the channel width direction, In addition, the oxide 230b may have a curved surface between the side surface and the top surface of the oxide 230b. That is, the ends of the side surfaces and the ends of the top surface may be curved.

[0230] The radius of curvature of the curved surface is greater than 0 nm, and the oxide 23 in the region overlapping the conductor 242 is 0b or the upper surface of the oxide 230b in the region not having the curved surface. It is preferable that the radius of curvature of the curved surface is less than half the length. More than 20 nm, preferably 1 nm to 15 nm, and more preferably 2 nm By forming the insulating layer 25 in a later process, the thickness of the insulating layer 25 is set to 10 nm or less. The oxide 230 and the conductor 260 can be more effectively covered in the grooves. b, preventing a reduction in the length of the region not having the curved surface, and Therefore, it is possible to suppress the decrease in the on-state current and the mobility. A conductor device can be provided.

[0231] The oxide 230c may be provided for each transistor 200A. The oxides 230c of the transistors 200A do not need to be in contact with each other. By providing an oxide 230c for each transistor 200A, the distance between the two transistors is reduced. Prevents raw transistors from forming and prevents leakage paths from forming along the conductor 260 Therefore, it is possible to obtain a semiconductor device having good electrical characteristics and capable of being miniaturized or highly integrated. It is possible to provide a semiconductor device that can

[0232] The conductor 260 and the insulator 250 are shared between adjacent transistors 200A. That is, the conductor 260 of the transistor 200A may be used A region that is continuous with the conductor 260 of the transistor 200A adjacent to the transistor 200A. The insulator 250 of the transistor 200A has a 2A and 2B, the insulator 250 of the transistor 200A is continuous with the insulator 250 of the transistor 200A adjacent thereto.

[0233] In addition, by adopting the above-mentioned configuration, the oxide 230d is a transistor 200A and A region in contact with the insulator 224 is provided between the transistor 200A adjacent to the transistor 200A. Note that the oxide 230d of the transistor 200A has a The oxide 230d of the adjacent transistor 200A may be configured to be separated from the oxide 230d of the adjacent transistor 200A. In this case, the insulator 250 is formed between the transistor 200A and the transistors adjacent to the transistor 200A. There is a region in contact with the insulator 224 between the transistor 200A.

[0234] Insulator 212, insulator 214, insulator 254, insulator 282, insulator 283, and insulator 286 indicates that impurities such as water and hydrogen enter the transistor 200A from the substrate side or from above the transistor 200A. It is preferable that the insulating film functions as a barrier insulating film that suppresses diffusion of the Therefore, the insulators 212, 214, 254, 282, and The body 283 and the insulator 286 are hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and acids. It has the function of suppressing the diffusion of impurities such as nitrogen fluoride molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an insulating material that has a high oxygen content (i.e., the impurities are unlikely to permeate the insulating material). (e.g., at least one of oxygen atoms, oxygen molecules, etc.) It is preferable to use an insulating material which is less permeable to oxygen.

[0235] In this specification, the term "barrier insulating film" refers to an insulating film having a barrier property. In the specification, the term "barrier property" refers to the function of suppressing the diffusion of the corresponding substance (also called low permeability). Alternatively, the corresponding substance is captured and fixed (also called gettering). It is noh.

[0236] For example, silicon nitride or the like is used as the insulator 212 and the insulator 283, and the insulator 214 is It is preferable to use aluminum oxide or the like for the insulators 254 and 282. This allows impurities such as water and hydrogen to pass through the insulators 212 and 214 and reach the substrate. In addition, the insulator 22 can be prevented from diffusing from the insulator 22 to the transistor 200A. 4, etc., diffuses to the substrate side through the insulators 212 and 214. In this way, the transistor 200A can be prevented from being affected by impurities such as water and hydrogen. and insulators 212, 214, 254, and the like, which have the function of suppressing the diffusion of oxygen. It is preferable to have a structure in which the circuit board is surrounded by an edge 282 and an insulator 283 .

[0237] It is also preferable to reduce the resistivity of the insulators 212, 283, and 286. For example, the resistivity of the insulator 212, the insulator 283, and the insulator 286 may be 1× 10 13 By setting the resistance at about Ωcm, it is possible to reduce the resistance during processing using plasma, etc. in the semiconductor device manufacturing process. The insulators 212, 283, and 286 are electrically connected to the conductors 205, 242, Charge build-up of the conductor 260 or the conductor 246 may be alleviated. The resistivity of the insulators 212, 283, and 286 is preferably less than 1×10 1 0 Ωcm or more 1×10 15 Ωcm or less.

[0238] The insulators 216 and 280 preferably have a lower dielectric constant than the insulator 214. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance between wiring lines can be reduced. For example, the insulators 216 and 280 may be silicon oxide, silicon oxynitride, or nitride. Silicon oxide, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon Silicon oxide, silicon oxide doped with carbon and nitrogen, silicon oxide with vacancies, etc. are used appropriately. In particular, silicon oxide and silicon oxynitride are preferred because they are thermally stable. In particular, materials such as silicon oxide, silicon oxynitride, and silicon oxide with voids, This is preferable because it makes it possible to easily form a region containing oxygen that is desorbed by heating.

[0239] The conductor 205 may function as a second gate electrode. In that case, the conductor 205 The potential applied to the conductor 260 is changed independently of the potential applied to the conductor 260. In particular, the threshold voltage (Vth) of the transistor 200A can be controlled by the conductor. By applying a negative potential to the capacitor 205, the Vth of the transistor 200A is increased. Therefore, it is possible to reduce the off-current. When the potential applied to the conductor 260 is 0 V, the drain current is larger when the potential is applied to the conductor 260 than when the potential is not applied. The in-current can be reduced.

[0240] The conductor 205 is positioned to overlap the oxide 230 and the conductor 260 .

[0241] As shown in FIG. 10A, the conductor 205 is a conductor 242a of the oxide 230 and It is preferable that the area is set larger than the area that does not overlap with the conductor 242b. As shown in Fig. 2C, the conductor 205 is etched in the channel width direction of the oxide 230a and the oxide 230b. It is preferable that the film is stretched even in the region outside the end intersecting with the acid direction. The conductor 205 and the conductor 26 are disposed on the outer side of the side surface of the oxide 230 in the channel width direction. It is preferable that the first electrode overlaps the second electrode via an insulator. The electric field of the conductor 260 acting as a gate electrode and the electric field of the conductor 270 acting as a second gate electrode The electric field of the body 205 can electrically surround the channel forming region of the oxide 230. In this specification, the electric field of the first gate and the second gate is used to form a channel. The structure of a transistor that electrically surrounds a region is called a surrounded channel. This is called the (S-channel) structure.

[0242] In this specification, a transistor having an S-channel structure is a transistor having a pair of gates A transistor in which a channel forming region is electrically surrounded by the electric field of one and the other of the electrodes The S-channel structure disclosed in the present specification and the like is a fin type structure and The S-channel structure is different from the planar structure. In other words, the transistor is made less susceptible to short channel effects. This can be done.

[0243] As shown in FIG. 10C, the conductor 205 is extended to function as a wiring. However, the present invention is not limited to this, and a conductive material that functions as a wiring may be provided under the conductive material 205. In addition, the conductor 205 does not necessarily have to be provided for each transistor. For example, the conductor 205 may be shared by multiple transistors. Good too.

[0244] Here, the conductor 205a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitric oxide. It has the function of suppressing the diffusion of impurities such as elementary molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use a conductive material that can absorb oxygen (e.g., oxygen atoms, oxygen molecules, etc.). It is preferable to use a conductive material having a function of suppressing the diffusion of at least one of the above.

[0245] By using a conductive material having a function of suppressing the diffusion of oxygen for the conductor 205a, It is possible to prevent the conductor 205b from being oxidized and the conductivity from decreasing. Examples of conductive materials having a suppressing function include tantalum, tantalum nitride, and ruthenium. It is preferable to use ruthenium, ruthenium oxide, or the like for the conductor 205a. The conductive material may be a single layer or a multilayer. For example, the conductive material 205a may be tantalum, nitride, or the like. Tantalum, ruthenium, or ruthenium oxide and titanium or titanium nitride are laminated. This is also fine.

[0246] The conductor 205b is a conductive material mainly composed of tungsten, copper, or aluminum. Although the conductor 205b is illustrated as a single layer, it may be formed as a laminated structure. For example, a laminate of titanium or titanium nitride and the conductive material may be used.

[0247] In the transistor 200A, the conductor 205 is made up of a conductor 205a and a conductor 205b. However, the conductor 205 may have either a single-layer structure or a multilayer structure. It's fine.

[0248] The insulator 222 suppresses the diffusion of hydrogen (e.g., at least one of hydrogen atoms, hydrogen molecules, etc.). In addition, the insulator 222 preferably has a function of preventing oxygen (for example, oxygen atom, acid It is preferable that the material has a function of suppressing the diffusion of at least one element such as an elementary molecule. The insulator 222 is more effective at suppressing the diffusion of hydrogen and / or oxygen than the insulator 224. It is preferable that

[0249] The insulator 222 is an oxide of one or both of aluminum and hafnium, which are insulating materials. It is advisable to use an insulator containing oxides of either or both of aluminum and hafnium. The insulator containing the above has a barrier property against oxygen, hydrogen, and water. Aluminum oxide, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use such a material for the insulator 222. When formed, the insulator 222 prevents oxygen from being released from the oxide 230 to the substrate side and prevents the transistor from being damaged. It functions as a layer that suppresses the diffusion of impurities such as hydrogen from the periphery of the rotor 200A to the oxide 230. Therefore, by providing the insulator 222, impurities such as hydrogen are prevented from entering the transistor 200A. In addition, the diffusion of oxygen into the oxide 230 can be suppressed, and the generation of oxygen vacancies in the oxide 230 can be suppressed. In addition, the conductor 205 reacts with the oxygen contained in the insulator 224 and the oxide 230. can be suppressed.

[0250] Alternatively, the insulator may be, for example, aluminum oxide, bismuth oxide, germanium oxide, Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, dioxide Alternatively, these insulators may be nitrided. The insulator 222 is formed by adding silicon oxide, silicon oxynitride, or silicon nitride to these insulators. They may also be used in a laminated state.

[0251] The insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, or oxide. Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi Insulating materials including (so-called high-k materials) such as (Ba,Sr)O3) and (Ba,Sr)TiO3 (BST) As transistors become smaller and more highly integrated, Thinning of the gate insulator can cause problems such as leakage current. By using a high-k material as an insulator that functions as a gate insulator, the thickness of the transistor can be increased while maintaining the physical thickness. This makes it possible to reduce the gate potential during transistor operation.

[0252] It is preferable that the insulator 224 in contact with the oxide 230 desorbs oxygen when heated. For example, the insulator 224 may be made of silicon oxide, silicon oxynitride, or the like. By providing an insulator containing the oxide 230 in contact with the oxide 230, oxygen vacancies in the oxide 230 are reduced. In addition, the reliability of the transistor 200A can be improved.

[0253] Specifically, the insulator 224 is a region in which oxygen is present in excess of the stoichiometric composition (hereinafter referred to as It is preferable to use an insulating material containing excess oxygen. Excess oxygen regions or oxide films containing excess oxygen are called TDS (Thermal Desor The amount of oxygen molecules released was 1.0×10 1 8 molecules / cm 3 More than 1.0×10 19 Molecules / cm 3 More preferably, 2.0×10 19 molecules / cm 3 That's all, is 3.0 x 10 20 molecules / cm 3 The oxide film is the above T The surface temperature of the film during DS analysis was 100°C to 700°C or 100°C to 40°C. A range of 0°C or less is preferred.

[0254] In addition, the insulator having the excess oxygen region is brought into contact with the oxide 230 and then heat-treated, and Alternatively, the signal may be processed by one or more of the following processes: By this, it is possible to remove the water or hydrogen in the oxide 230. may be diffused or captured (also called gettered) in the conductor 242.

[0255] The microwave treatment may be performed, for example, using a device having a power source that generates high-density plasma, or It is preferable to use an apparatus having a power source for applying RF to the substrate side. By using gas and high-density plasma, high-density oxygen radicals can be generated. By applying RF to the substrate side, oxygen radiative transfer is generated by high-density plasma. The cations can be efficiently introduced into the oxide 230 or into the insulator adjacent to the oxide 230. The microwave treatment can be performed at a pressure of 133 Pa or more, preferably 200 Pa or more. More preferably, the pressure is set to 400 Pa or more. For example, oxygen and argon are used as the gas to be introduced, and the oxygen flow ratio (O2 / (O2+ Microwave treatment should be performed when Ar) is 50% or less, preferably 10% to 30%. .

[0256] In addition, by performing an oxygen addition process on the oxide 230, oxygen vacancies in the oxide 230 are filled by supplying oxygen. The oxygen contained in the oxide 230 can promote the repair reaction. The hydrogen is removed as H2O by the reaction of the oxygen supplied to the reactor with the hydrogen that has been removed (dehydration). As a result, the hydrogen remaining in the oxide 230 is reconstituted into oxygen vacancies. Combined together V OThe formation of H can be suppressed.

[0257] Each of the insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In this case, the laminated structure is not limited to the same material, and may be a laminated structure made of different materials. That's fine too.

[0258] The oxide 243 preferably has a function of suppressing oxygen permeation. Between the conductor 242 functioning as an in-electrode and the oxide 230b, a function of suppressing oxygen permeation is provided. By disposing the oxide 243 having a function, the electric potential between the conductor 242 and the oxide 230b is increased. This is preferable because it reduces the electrical resistance of the transistor 200A. The electrical characteristics and reliability of the transistor 200A can be improved. If the electrical resistance between 242 and oxide 230b can be sufficiently reduced, oxide 243 is not provided. It may be configured as follows.

[0259] The oxide 243 may be a metal oxide having an element M. In particular, the element M is Al. For example, aluminum, gallium, yttrium, or tin may be used. It is preferable that the concentration of element M is higher than that of oxide 230b. Alternatively, the oxide 243 may be a metal oxide such as In-M-Zn oxide. Specifically, in the metal oxide used for the oxide 243, The atomic ratio of element M to element In in the metal oxide used for oxide 230b is It is preferable that the atomic ratio of M is larger than that of M. Also, the thickness of the oxide 243 is 0.5 nm or more. Preferably, the thickness is 5 nm or less, more preferably, 1 nm to 3 nm, and even more preferably, 1 nm The oxide 243 is preferably crystalline. When 3 has crystallinity, the release of oxygen in the oxide 230 can be suitably suppressed. For example, if the oxide 243 has a crystal structure such as a hexagonal crystal, the release of oxygen in the oxide 230 It may be possible to suppress the emission.

[0260] The conductor 242 may be, for example, a nitride containing tantalum, a nitride containing titanium, or a molybdenum. nitrides containing tungsten, nitrides containing tantalum and aluminum, It is preferable to use nitrides containing tungsten and aluminum. In particular, nitrides containing tantalum are preferred. In addition, for example, ruthenium oxide, ruthenium nitride, etc. oxides containing sulphur, strontium and ruthenium, oxides containing lanthanum and nickel, etc. These materials are conductive materials that are difficult to oxidize, or materials that absorb oxygen but do not oxidize. This is a preferred material since it maintains electrical conductivity.

[0261] There may be a curved surface between the side surface of the conductor 242 and the top surface of the conductor 242. The side edges and top edges may be curved. At the end of 2, the radius of curvature is 3 nm or more and 10 nm or less, preferably 5 nm or more and 6 nm or less. The absence of sharp edges improves the coating properties of the film in the subsequent film formation process. do.

[0262] In addition, when the oxide 243 is not provided, the conductor 242 and the oxide 230b or the oxide 23 When the oxide 230b or the oxide 230c comes into contact with the conductor 242, the oxygen in the oxide 230b or the oxide 230c is transferred to the conductor 242. The conductor 242 may be oxidized. It is highly likely that the conductivity of oxide 230b or oxide 230c will decrease. The diffusion of oxygen into the conductor 242 is caused by the conductor 242 being in contact with the oxide 230b or the oxide 230c. This can be rephrased as absorbing the oxygen in 0c.

[0263] In addition, oxygen in the oxide 230b or the oxide 230c is mixed with the conductor 242a and the conductor 242 b, the conductor 242a and the oxide 230b are diffused to the conductor 242b and the oxide 230b. Between the oxide 230b, or between the conductor 242a and the oxide 230c, and between the conductor A layer may be formed between the conductor 242b and the oxide 230c. a or conductor 242b, the layer is presumed to have insulating properties. At this time, the conductor 242a or conductor 242b, the layer, and the oxide 230b or The three-layer structure with oxide 230c can be regarded as a three-layer structure consisting of metal-insulator-semiconductor. This allows for a MIS (Metal-Insulator-Semiconductor) structure. , or a diode junction structure mainly based on an MIS structure.

[0264] In addition, hydrogen contained in the oxide 230b, the oxide 230c, etc. is In particular, the conductor 242a and the conductor 242b may be diffused into the conductor 242a. By using a nitride containing talc, hydrogen contained in the oxide 230b, the oxide 230c, etc. The hydrogen is likely to diffuse into the conductor 242a or the conductor 242b. 2a or the conductor 242b. In other words, the oxide 230b The hydrogen contained in the oxide 230c is absorbed by the conductor 242a or the conductor 242b. This may be the case.

[0265] The insulator 254 is formed on a side of the oxide 230a, a side of the oxide 230b, a side of the oxide 243, It is provided to cover the side surface and the top surface of the conductor 242.

[0266] The insulator 254 preferably has a function of suppressing the diffusion of oxygen. It is preferable that the insulator 254 is more effective at preventing oxygen diffusion than the insulator 280. For example, an insulator containing oxides of one or both of aluminum and hafnium is used as the It is preferable to form a film.

[0267] The insulator 254 is oxidized in an oxygen-containing atmosphere by bias sputtering. It is preferable to deposit aluminum or hafnium oxide. The sputtering method is a method in which RF power is applied to the substrate while sputtering. By applying a force, the potential of the substrate becomes negative (bias potential) relative to the plasma potential. The positive ions in the plasma are accelerated to this bias potential and injected into the substrate. The potential can be controlled by the amount of RF power applied to the substrate. The aluminum oxide or halide oxide is deposited in an oxygen-containing atmosphere by the asphalt sputtering method. Oxygen can be implanted into the insulator 224 by depositing fluorine.

[0268] In the bias sputtering method, the insulation is affected by the magnitude of the RF power applied to the substrate. The amount of oxygen implanted into the insulator 224 underlying the body 254 can be controlled. For example, , RF power: 0.31 W / cm 2 More than 0.62 W / cm 2 That's all. Preferably 1.86 W / cm 2 The above bias should be applied to the substrate. The amount of oxygen suitable for the characteristics of the transistor is changed by the RF power when the film 254 is formed. In addition, the amount of oxygen that is suitable for improving the reliability of the transistor can be implanted. Also, the RF frequency is preferably 10 MHz or higher. Typically, 13. The higher the RF frequency, the less damage it can cause to the board. Therefore, by adjusting the RF power applied to the substrate, the amount of ions implanted in the insulator 224 can be adjusted. Since the amount of oxygen can be controlled, the amount of oxygen implanted into the insulator 224 can be optimized.

[0269] In the bias sputtering method, the bias applied to the substrate is not limited to RF power. It can also be a DC voltage.

[0270] As described above, oxygen is implanted into the underlying film in the process of forming the insulator 254. The insulator 254 itself has a function of suppressing oxygen permeation. When an insulator 280 is formed on the insulating layer 54 and oxygen is diffused from the insulating layer 280, the insulating layer 28 0, oxygen is added to the oxide 230a, the oxide 230b, the oxide 243, and the conductor 242. It can prevent direct spread.

[0271] By providing the insulator 254 as described above, the oxide 230a, the oxide 230b, and the oxide 2 43 and the conductor 242 can be separated from the insulator 280. 30a, oxide 230b, oxide 243, and conductor 242, oxygen is transferred from insulator 280 to This can prevent the source and drain regions of the oxide 230 from diffusing directly. Excessive oxygen is supplied to the drain region, causing the carrier concentration in the source and drain regions to decrease. In addition, excessive oxidation of the conductor 242 can be prevented, which increases the resistivity and The on-current can be prevented from decreasing.

[0272] The insulator 250 is preferably disposed in contact with at least a portion of the oxide 230d. The substrate 250 may be silicon oxide, silicon oxynitride, silicon nitride oxide, or silicon nitride. fluorine-doped silicon oxide, carbon-doped silicon oxide, carbon and nitrogen-doped silicon oxide Silicon oxide having no voids, silicon oxide having voids, etc. can be used. Silicon and silicon oxynitride are preferred because they are stable to heat.

[0273] The insulator 250 is formed using an insulator that releases oxygen when heated, similar to the insulator 224. It is preferable to use an insulator that releases oxygen when heated as the insulator 250. By providing the oxide 230 in contact with at least a portion of the oxide 230d, the channel formation of the oxide 230 By effectively supplying oxygen to the region, oxygen vacancies in the channel formation region of the oxide 230 can be reduced. Therefore, the fluctuation of the electrical characteristics is suppressed, and stable electrical characteristics are realized. In addition, a transistor with improved reliability can be provided. Similarly, it is preferable that the concentration of impurities such as water and hydrogen in the insulator 250 be reduced. The thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less.

[0274] Although the insulator 250 is illustrated as a single layer in FIG. 10B and FIG. 10C, it may be two or more layers. When the insulator 250 has a two-layer structure, the insulator 250 may have a laminate structure. The layer is formed using an insulator that releases oxygen when heated, and the upper layer of the insulator 250 is It is preferable to form the insulating layer using an insulating material having a function of suppressing the diffusion of the insulating material. By doing so, the oxygen contained in the lower layer of the insulator 250 is prevented from diffusing into the conductor 260. In other words, the decrease in the amount of oxygen supplied to the oxide 230 can be suppressed. In addition, the oxidation of the conductor 260 due to the oxygen contained in the lower layer of the insulator 250 is suppressed. For example, the lower layer of the insulator 250 can be used for the insulator 250 described above. The upper layer of the insulator 250 is formed using a material similar to that of the insulator 222. This can be done.

[0275] In addition, when silicon oxide or silicon oxynitride is used as the lower layer of the insulator 250, the insulator The upper layer of 250 may be made of an insulating material, such as a high-k material having a high dielectric constant. The heat insulating material is formed into a laminated structure of a lower layer of the insulating material 250 and an upper layer of the insulating material 250. Therefore, it is possible to obtain a laminated structure that is stable against the gate insulation and has a high relative dielectric constant. It is possible to reduce the gate potential applied during transistor operation while maintaining the physical thickness of the insulating layer. In addition, the equivalent oxide thickness (EOT) of the insulator that functions as the gate insulator can be reduced. This becomes possible.

[0276] Specifically, the upper layer of the insulator 250 may be made of hafnium, aluminum, gallium, or yttrium. Lithium, Zirconium, Tungsten, Titanium, Tantalum, Nickel, Germanium, Metal oxides or oxides containing one or more metals selected from magnesium, etc. Metal oxides can be used as the material 230. In particular, aluminum oxides can be used. It is preferable to use an insulator containing oxides of one or both of aluminum and hafnium.

[0277] By forming the insulator 250 into a two-layer laminate structure, the physical thickness of the insulator 250 provides electrical conductivity. The distance between the conductor 260 and the oxide 230 is maintained, and the distance between the conductor 260 and the oxide 230 is maintained. The leakage current can be suppressed. In addition, the physical property between the conductor 260 and the oxide 230 can be suppressed. The distance and the electric field strength applied from the conductor 260 to the oxide 230 can be easily adjusted appropriately. This can be done.

[0278] In addition, a metal oxide may be provided between the insulator 250 and the conductor 260. In this case, it is preferable to suppress the diffusion of oxygen from the insulator 250 to the conductor 260. By providing a metal oxide that suppresses the diffusion of oxygen from the insulator 250 to the conductor 260, the diffusion of oxygen from the insulator 250 to the conductor 260 can be suppressed. In other words, the decrease in the amount of oxygen supplied to the oxide 230 can be suppressed. In addition, oxidation of the conductor 260 due to oxygen in the insulator 250 can be suppressed.

[0279] The metal oxide preferably functions as a part of the first gate electrode. By including the above metal oxide, the influence of the electric field from the conductor 260 is not weakened, and the The on-current of the transistor 200A can be improved. For example, the oxide 230 Any usable metal oxide can be used as the above-mentioned metal oxide. By forming the conductor 260a by a sputtering method, the electrical resistance value of the metal oxide is This is called OC (Oxide Conductor). It can be called an electrode.

[0280] The conductor 260 includes a conductor 260a and a conductor 260b disposed on the conductor 260a. For example, the conductor 260a has a bottom surface and a side surface of the conductor 260b. It is preferable that the casing is arranged so as to enclose the casing. Also, as shown in Fig. 10(B) and Fig. 10(C), As shown, the upper surface of the conductor 260 is connected to the upper surface of the insulator 250, the upper surface of the oxide 230d, and the upper surface of the oxide 10(B) and 10(C), the conductor 230c is disposed so as to be substantially aligned with the upper surface of the conductor 230c. Although the conductor 260 is shown as having a two-layer structure of conductor 260a and conductor 260b, it may have a single-layer structure. It may have a laminated structure of three or more layers.

[0281] The conductor 260a is a conductive material having a function of suppressing the diffusion of impurities, similar to the conductor 205a. It is preferable to use a conductive material having a function of suppressing the diffusion of oxygen. It is preferable to use:

[0282] In addition, the conductor 260a has a function of suppressing the diffusion of oxygen, and thus the conductor 260a is included in the insulator 250. The oxygen contained in the conductive material 260b can prevent the conductive material 260b from being oxidized and the conductivity from decreasing. Examples of conductive materials that have the function of suppressing oxygen diffusion include tantalum and nitride. It is preferable to use tantalum, ruthenium, ruthenium oxide, or the like.

[0283] In addition, since the conductor 260 also functions as wiring, a conductor with high conductivity can be used. For example, the conductor 260b may be made of a material mainly composed of tungsten, copper, or aluminum. The conductive material 260b may have a laminated structure. For example, a laminated structure of titanium or titanium nitride and the above-mentioned conductive material may be used.

[0284] In addition, in the transistor 200A, the conductor 260 is formed in the insulator 280 or the like. The conductor 260 is formed in a self-aligned manner to fill the opening. Thus, the conductor 260 is aligned in the region between the conductors 242a and 242b. It can be positioned reliably without any

[0285] As shown in FIG. 10C, in the channel width direction of the transistor 200A, The bottom surface of the region of the dielectric 260 that does not overlap with the oxide 230b is lower than the bottom surface of the oxide 230b. It is preferable that the conductor 260 functioning as the gate electrode is connected to the insulator 250 or the like. In addition, the side and top surfaces of the channel formation region of the oxide 230b are covered, so that the conductor It is easy to apply the electric field of 260 to the entire channel forming region of the oxide 230b. The on-state current of the transistor 200A can be increased, and the frequency characteristics can be improved. When the bottom surface of the edge 222 is taken as a reference, the oxide 230a and the oxide 230b, and the conductor 26 0 is the height of the bottom surface of the conductor 260 in the non-overlapping region and the height of the bottom surface of the oxide 230b. The difference between the height and is 0 nm or more and 100 nm or less, preferably 3 nm or more and 50 nm or less, more preferably More preferably, it is 5 nm or more and 20 nm or less.

[0286] The insulator 280 is provided on the insulator 254. The upper surface of the insulator 280 is planarized. It may be possible.

[0287] It is also preferable that the concentration of impurities such as water and hydrogen in the insulator 280 is reduced. In addition, the insulator 280 preferably has a low hydrogen concentration and an excess oxygen region or excess oxygen. For example, the insulator 280 may be made of the same material as the insulator 216. The above-mentioned materials may be laminated, for example, a silicon oxide film formed by a sputtering method. Chemical Vapor Deposition (CVD) is then applied to the A silicon oxynitride film formed by the SiO2 film forming method may be used as a laminate structure. Silicon nitride may be laminated.

[0288] The conductor 240 is made of a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable that the conductor 240 has a laminated structure. In this case, the conductive members in contact with the insulators 283, 282, 280, and 254 are The body can be made of conductive materials that have the function of suppressing the permeation of impurities such as water and hydrogen. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, ruthenium oxide, etc. It is preferable to use ruthenium or the like. In addition, it is preferable to use a material that has a function of suppressing the permeation of impurities such as water and hydrogen. The conductive material having the function may be used in a single layer or a multilayer. Impurities such as water and hydrogen contained in the conductor 240a are converted into oxides through the conductor 240b. It is possible to suppress contamination of 230.

[0289] The insulators 241a and 241b may be, for example, silicon nitride or aluminum oxide. An insulator such as silicon nitride oxide may be used. Since the insulator 254 is provided in contact with the insulator 254, impurities such as water and hydrogen contained in the insulator 280 can be prevented. In order to prevent impurities from being mixed into the oxide 230 through the conductors 240a and 240b, In particular, silicon nitride is preferable because it has a high blocking property against hydrogen. In addition, oxygen contained in the insulator 280 is absorbed into the conductor 240a and the conductor 240b. This can prevent the

[0290] In addition, a conductor that functions as wiring and is in contact with the upper surface of the conductor 240a and the upper surface of the conductor 240b is provided. The conductor 246 (conductor 246a and conductor 246b) may be disposed. It is preferable to use a conductive material mainly composed of tin, copper, or aluminum. The conductor may also have a laminated structure, for example, titanium or titanium nitride and The conductive material may be laminated in an opening in the insulator. It may be formed so as to be embedded.

[0291] The insulator 286 is provided on the conductor 246 and the insulator 283. The upper and side surfaces of the conductor 246 are in contact with the insulator 286, and the lower surface of the conductor 246 is in contact with the insulator 283. In other words, the conductor 246 is surrounded by the insulator 283 and the insulator 286. By adopting such a configuration, the permeation of oxygen from the outside can be suppressed, and the conductor 24 In addition, impurities such as water and hydrogen can be prevented from escaping from the conductor 246. This is preferable because it can prevent the diffusion of the component to the surrounding area.

[0292] The substrate on which the transistor 200A is formed may be, for example, an insulating substrate, a semiconductor substrate, or The insulating substrate may be, for example, a glass substrate or a quartz substrate. Plates, sapphire substrates, stabilized zirconia substrates (yttria stabilized zirconia substrates, etc.), Resin substrates, etc. Semiconductor substrates are made of, for example, silicon or germanium. Semiconductor substrates as materials, or silicon carbide, silicon germanium, gallium arsenide, phosphorus Compound semiconductor substrates made of indium oxide, zinc oxide, and gallium oxide are also available. The above-mentioned semiconductor substrate has an insulating region therein, for example, an SOI substrate. The conductive substrate includes a graphite substrate, a metal substrate, an alloy substrate, a conductive resin substrate, and the like. Alternatively, there are substrates having metal nitrides, substrates having metal oxides, etc. A substrate in which a conductor or semiconductor is provided on an insulating substrate, a semiconductor substrate in which a conductor or an insulator is provided a substrate in which a semiconductor or insulator is provided on a conductor substrate, or a substrate in which a semiconductor or insulator is provided on a conductor substrate. The substrate may have elements mounted thereon. , a capacitance element, a resistance element, a switch element, a light-emitting element, a memory element, and the like.

[0293] The insulators constituting the semiconductor device include oxides, nitrides, oxynitrides, These include nitride oxides, metal oxides, metal oxynitrides, and metal oxynitrides.

[0294] For example, as transistors become smaller and more highly integrated, the gate insulator becomes thinner, and the Insulators that function as gate insulators may have problems such as high leakage current. By using hk materials, it is possible to reduce the voltage required for transistor operation while maintaining the same physical thickness. On the other hand, by using a material with a low relative dielectric constant for the insulator that functions as the interlayer film, It is possible to reduce the parasitic capacitance between wiring. Therefore, depending on the function of the insulator, The material should be selected.

[0295] Insulators with high relative dielectric constants include gallium oxide, hafnium oxide, and zirconium oxide. Aluminum, oxides containing aluminum and hafnium, oxides containing aluminum and hafnium Oxynitride, oxide with silicon and hafnium, oxide with silicon and hafnium These include oxynitrides, or nitrides with silicon and hafnium.

[0296] Insulators with low dielectric constants include silicon oxide, silicon oxynitride, and silicon nitride oxide. Silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon, carbon silicon oxide with added oxygen and nitrogen, silicon oxide with voids, or resin. .

[0297] In addition, a transistor using a metal oxide suppresses the permeation of impurities such as hydrogen and oxygen. By surrounding the transistor with a functional insulator, the electrical characteristics of the transistor can be stabilized. Examples of insulators that have the function of suppressing the permeation of impurities such as hydrogen and oxygen include , boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, Chlorine, argon, gallium, germanium, yttrium, zirconium, lanthanum, Insulators containing oxydimium, hafnium, or tantalum may be used in single or multilayer configurations. Specifically, it is an insulator that has the function of suppressing the permeation of impurities such as hydrogen and oxygen. , Aluminum oxide, Magnesium oxide, Gallium oxide, Germanium oxide, Yttrium oxide Sodium, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide metal oxides such as aluminum nitride, silicon oxide nitride, and silicon nitride; Compounds such as fluorine-containing fluorine compounds can be used.

[0298] In addition, the insulator that functions as the gate insulator has a region that contains oxygen that is desorbed by heating. For example, an oxide having a region containing oxygen that is released by heating is preferable. By forming a structure in which silicon oxide or silicon oxynitride is in contact with the oxide 230, the oxide 2 The oxygen deficiency of 30 can be compensated for.

[0299] The conductors constituting the semiconductor device include aluminum, chromium, copper, silver, gold, platinum, tin, and tantalum. Nitrous, Nickel, Titanium, Molybdenum, Tungsten, Hafnium, Vanadium, Niobium manganese, magnesium, zirconium, beryllium, indium, ruthenium, A metal element selected from the group consisting of rhodium, strontium, lanthanum, etc., or the above-mentioned metal elements It is preferable to use an alloy containing the above-mentioned metal elements or an alloy combining the above-mentioned metal elements. For example, tantalum nitride, titanium nitride, tungsten nitride, titanium and aluminum nitride tantalum and aluminum nitrides, ruthenium oxide, ruthenium nitride, strontium Oxides containing thium and ruthenium, oxides containing lanthanum and nickel, etc. can be used. Also preferred are tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, and titanium. Ruthenium and aluminum nitrides, ruthenium oxide, ruthenium nitride, strontium and Oxides containing ruthenium and oxides containing lanthanum and nickel are conductive materials that are resistant to oxidation. It is preferable because it is a material that maintains its conductivity even when it absorbs oxygen. Semiconductors with high electrical conductivity, such as polycrystalline silicon containing impurity elements, A silicide such as kelsilicide may also be used.

[0300] In addition, a plurality of conductive layers made of the above materials may be laminated. Alternatively, a laminated structure may be used in which a material containing a metal element and a conductive material containing oxygen are combined. In addition, a laminated structure combining the above-mentioned material containing a metal element and a conductive material containing nitrogen is also available. The above-mentioned metal element-containing material, the conductive material containing oxygen, and the nitrogen A laminated structure in which the conductive material containing the above is combined may also be used.

[0301] In the case where an oxide is used for the channel formation region of a transistor, The conductor that functions as a conductive material is a combination of the above-mentioned metal element-containing material and an oxygen-containing conductive material. In this case, it is preferable to use a laminated structure in which an oxygen-containing conductive material is used as a chalcogenide. It is preferable to provide the conductive material containing oxygen on the channel formation region side. As a result, oxygen released from the conductive material is easily supplied to the channel formation region.

[0302] In particular, the metal oxide in which the channel is formed is used as a conductor that functions as a gate electrode. It is preferable to use a conductive material containing the metal element and oxygen. Conductive materials containing silicon and nitrogen may be used. For example, titanium nitride, tantalum nitride, etc. A conductive material containing nitrogen may be used. Indium tin oxide and tungsten oxide may also be used. Indium oxide containing tungsten oxide, indium zinc oxide containing titanium oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Silicon-doped indium tin oxide may also be used. By using such a material, a channel is formed. In some cases, hydrogen contained in metal oxides can be captured, or the outer insulator can be removed. In some cases, it may be possible to capture hydrogen that is mixed in from sources such as the fuel cell.

[0303] FIG. 11 illustrates a semiconductor device including a transistor 200B. 11(B) to 11(D) are top views of the body device in FIG. 11(A). 11(a) and 11(b) are cross-sectional views taken along dashed lines A1-A2, A3-A4, and A5-A6. FIG. 11B) can also be considered as a cross-sectional view of the transistor 200B in the channel length direction. It can also be said that this is a cross-sectional view of the transistor 200B in the channel width direction. Some elements have been omitted for clarity of the illustration.

[0304] The transistor 200B has a different shape of the insulator 283, an insulator 287, an insulator 274, , insulator 271a, and insulator 271b, and oxide 230c and oxide It differs from transistor 200A in that it does not have 230d.

[0305] In the semiconductor device shown in FIG. 11, the insulator 214, the insulator 216, the insulator 222, the insulator 22 4, the insulator 254, the insulator 280, and the insulator 282 are patterned. The insulators 287 and 283 are the insulators 214, 216, 222, and 224, insulator 254, insulator 280, and insulator 282. The insulator 287 is disposed on the top surface of the insulator 212, the side surface of the insulator 214, the side surface of the insulator 216, A side of the insulator 222, a side of the insulator 224, a side of the insulator 254, a side of the insulator 280, The insulator 283 is in contact with the side surface and the top surface of the insulator 282. The oxide 230, the insulator 214, the insulator 216, and the insulator 217 are in contact with each other. The insulator 222, the insulator 224, the insulator 254, the insulator 280, and the insulator 282 are insulating materials. The body 287 and the insulator 283, and the insulator 212, isolate the body 287 and the insulator 283 from the outside. The transistor 200B is sealed with an insulator 287, an insulator 283, and an insulator 212. The area is placed within the specified area.

[0306] For example, the insulators 214, 282, and 287 may be configured to capture hydrogen and fix hydrogen. The insulators 212 and 283 are formed using a material having a function of reacting with hydrogen and oxygen. It is preferable to form the insulating layer using a material that has a function of suppressing diffusion of the insulating material. Aluminum oxide can be used for the body 214, the insulator 282, and the insulator 287. Typically, silicon nitride is used as the insulator 212 and the insulator 283. It is possible.

[0307] With the above configuration, hydrogen contained outside the sealed region is absorbed into the sealed region. Therefore, it is possible to suppress the hydrogen concentration in the transistor from being mixed in the semiconductor device. It can be retained.

[0308] In the transistor 200B shown in FIG. 11, the insulator 212, the insulator 287, and the insulator Although the structure in which the body 283 is provided as a single layer is shown, each of them has a single-layer structure. Alternatively, it may have a laminated structure.

[0309] In addition, the insulator 287 may not be provided. When the insulator 287 is not provided, The structure 200B is disposed in a region sealed by the insulator 212 and the insulator 283. By doing so, hydrogen contained outside the sealed area is prevented from mixing into the sealed area. Therefore, the hydrogen concentration in the transistor can be further reduced. It can be retained.

[0310] The insulator 274 functions as an interlayer film. The insulator 274 has a dielectric constant lower than that of the insulator 214. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance generated between wirings is reduced. The insulator 274 can be made of the same material as the insulator 280, for example. It can be established.

[0311] The insulating film that becomes the insulator 274 is preferably formed by sputtering. A film formed by sputtering is preferable because the hydrogen concentration in the film is low. Therefore, in the process of forming the insulating film, the hydrogen concentration in the transistor is prevented from increasing. It can be suppressed.

[0312] In addition, the insulator 287, the insulator 283, and the insulating film are continuously heated without being exposed to the air environment. It is preferable to deposit the film continuously without exposing it to the air environment. Also, it is possible to prevent impurities or moisture from the atmospheric environment from adhering to the insulator 283. , the interface and vicinity of the interface between the insulator 287 and the insulator 283, and the interface and vicinity of the insulator 283 and the insulator The interface with the film and the vicinity of the interface can be kept clean. In addition, the manufacturing process of the semiconductor device can be simplified. It can be made into

[0313] In the semiconductor device shown in FIG. 11, an insulator 271a is provided between the conductor 242a and the insulator 254. An insulator 271b is provided between the conductor 242b and the insulator 254.

[0314] Here, the insulators 271a and 271b have a function of suppressing the diffusion of oxygen. In this way, the conductors 242a and 242b functioning as the source electrode and the drain electrode are preferably In addition, the absorption of excess oxygen contained in the insulator 280 by the conductor 242b can be suppressed. In addition, by suppressing the oxidation of the conductors 242a and 242b, the transistor and the wiring It is possible to suppress an increase in the contact resistance with the line. The insulators 271a and 271b can provide good electrical characteristics and reliability. For example, the insulator 254 may be formed using a material similar to that of the insulator 254 .

[0315] In the method for manufacturing the semiconductor device shown in FIG. The insulating film and the conductive layer provided on the insulating film function as a mask when forming the conductor 242. This allows the conductor 242 (the conductor 242a and the conductor 242b ) has a corner at the end where the side surface and the top surface intersect. The angular shape of the end portion of the conductor 242 increases the cross-sectional area of ​​the conductor 242 compared to when the end portion has a curved surface. This reduces the resistance of conductor 242, thereby reducing the on-state of transistor 200B. The on-current can be increased.

[0316] In addition, by using a configuration in which the oxide 230c and the oxide 230d are not provided, the adjacent The generation of a parasitic transistor between the two transistors 200B is suppressed, and the conductor 26 This can suppress the occurrence of leakage paths along 0. Therefore, good electrical characteristics are achieved. It is possible to provide a semiconductor device which has the above-mentioned features and which can be miniaturized or highly integrated.

[0317] This embodiment mode can be combined with other embodiment modes as appropriate.

[0318] (Embodiment 3) In this embodiment, a pixel of a display device according to one embodiment of the present invention will be described with reference to FIGS.

[0319] [Pixels] The display device of this embodiment has a matrix of m rows and n columns (m and n are each an integer of 1 or more). FIG. 12 shows a pixel 200(i,j) (i is 1 to m). An example of a circuit diagram for a LSI (j is an integer between 1 and n, inclusive) is shown below.

[0320] The pixel 200(i,j) shown in FIG. 12 includes a light emitting element 210, a switch SW21, and a switch S It has W22, a transistor M, and a capacitive element C1.

[0321] In this embodiment, a transistor is used as the switch SW21. The gate of the switch SW21 is electrically connected to the scanning line GL1(i). The source and drain of each of the transistors are electrically connected to a signal line SL(j) at one end and a transistor M.

[0322] In this embodiment, a transistor is used as the switch SW22. The gate of SW22 is electrically connected to the scanning line GL2(i). The source and drain of the transistor M are electrically connected to the wiring COM at one end and the gate and drain of the transistor M at the other end. The power supply is electrically connected to the power supply.

[0323] The gate of the transistor M is connected to one electrode of the capacitance element C1, the source of the switch SW21, and The other of the drains is electrically connected to the other of the source and drain of the switch SW22. One of the source and drain of the transistor M is electrically connected to the wiring CATHODE. and the other end is electrically connected to the cathode of the light-emitting element 210.

[0324] The other electrode of the capacitance element C1 is electrically connected to the wiring CATHODE.

[0325] The anode of the light emitting element 210 is electrically connected to the wiring ANODE.

[0326] The scanning line GL1(i) has a function of supplying a selection signal. The scanning line GL2(i) has a function of supplying a control signal. The signal line SL(j) has a function of supplying an image signal. A constant potential is supplied to the wires COM, CATHODE, and ANODE. The anode side of the light emitting element 210 is set to a high potential, and the cathode side is set to a lower potential than the anode side. It is possible.

[0327] The switch SW21 is controlled by a selection signal to control the selection state of the pixel 200(i,j). It functions as a selection transistor to

[0328] The transistor M controls the current flowing through the light emitting element 210 in response to the potential supplied to the gate. When the switch SW21 is in a conductive state, the signal line SL The image signal supplied to (j) is supplied to the gate of the transistor M, and depending on the potential, The luminance of the light emitting element 210 can be controlled.

[0329] The switch SW22 has a function of controlling the gate potential of the transistor M based on a control signal. Specifically, the switch SW22 has a potential for putting the transistor M into a non-conductive state, It can be supplied to the gate of transistor M.

[0330] The switch SW22 can be used, for example, to control the pulse width. During this period, a current can be supplied from the transistor M to the light emitting element 210. The element 210 can express gray scales based on an image signal and a control signal.

[0331] Here, a channel is formed in each transistor of the pixel 200(i,j). It is preferable to use a transistor using a metal oxide (oxide semiconductor) for a semiconductor layer. stomach.

[0332] A transistor using metal oxide with a wider band gap and lower carrier concentration than silicon. The transistor can realize an extremely small off-current. The electric current causes the charge stored in the capacitance element connected in series with the transistor to be discharged over a long period of time. Therefore, the switch S connected in series to the capacitance element C1 can be Transistors using oxide semiconductors are used for W21 and the switch SW22. Other transistors are also preferably transistors using oxide semiconductors. By using a capacitor, the manufacturing cost can be reduced.

[0333] In addition, the transistor in the pixel 200(i, j) is provided with a semiconductor in which a channel is formed. It is also possible to use transistors that use silicon. In particular, single crystal silicon and polycrystalline silicon By using highly crystalline silicon such as silicon nitride, it is possible to achieve high field effect mobility. This is preferable because it allows for faster operation.

[0334] In addition, an oxide semiconductor is applied to at least one of the transistors included in the pixel 200(i,j). The transistors used were made of silicon. This is also fine.

[0335] In FIG. 12, the transistors are shown as n-channel transistors. However, a p-channel transistor can also be used.

[0336] The structure of the transistor in the display device is not particularly limited. For example, The transistor may be a staggered type transistor, or an inverse staggered type transistor. In addition, the transistor may be of either a top gate structure or a bottom gate structure. Alternatively, gate electrodes may be provided above and below the channel.

[0337] As a transistor included in the display device, for example, an OS transistor can be used. This makes it possible to realize a transistor with extremely low off-state current.

[0338] Alternatively, a Si transistor may be used as the transistor included in the display device. The transistors include, for example, transistors having amorphous silicon, crystalline silicon A transistor having a junction (typically low-temperature polysilicon), a transistor having a single crystal silicon Transistors and the like.

[0339] This embodiment mode can be combined with other embodiment modes as appropriate.

[0340] (Embodiment 4) In this embodiment, the semiconductor device can be used for the OS transistor described in the above embodiment. Metal oxides (also called oxide semiconductors) will be described.

[0341] The metal oxide preferably contains at least indium or zinc. In particular, indium In addition to these, aluminum, gallium, yttrium, and zinc are preferably included. It is preferable that the alloy contains thorium, tin, etc. Also, boron, silicon, titanium, Iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium A metal selected from aluminum, hafnium, tantalum, tungsten, magnesium, cobalt, etc. It may contain one or more species.

[0342] <Classification of crystal structures> First, classification of crystal structures in oxide semiconductors will be described with reference to FIG. FIG. 13A shows a structure of an oxide semiconductor, typically IGZO (In, Ga, and Zn) FIG. 1 is a diagram for explaining the classification of crystal structures of metal oxides containing ZnO.

[0343] As shown in FIG. 13A, oxide semiconductors are roughly divided into “amorphous” and “non-morphous” types. "Crystalline" and "Crystal" In addition, "Amorphous" is classified as completely amo rphous. Also, in "Crystalline", CAAC (c- axis-aligned crystalline), nc(nanocrystal line), and CAC (cloud-aligned composite). The classification of "Crystalline" includes single crystal, p Oly crystals and completely amorphous are excluded. In addition, "Crystal" includes single crystal and poly crystal. rystal is included.

[0344] The structures in the bold frames in FIG. 13(A) are classified into two types: "Amorphous" and "C It is an intermediate state between "crystal" and "new cryst" and is considered to be a new boundary region. In other words, this structure belongs to the energetic It is completely different from the unstable "Amorphous" and "Crystal". This can be rephrased as a different structure.

[0345] The crystal structure of the film or substrate was determined by X-ray diffraction (XRD). The quartz glass substrate and the "Cr IGZO (also called crystalline IGZO) has a crystal structure classified as "crystalline" XRD obtained by GIXD (Grazing-Incidence XRD) measurement of the film The spectra are shown in Figure 13(B) and Figure 13(C), respectively. This method is also called the Seemann-Bohlin method. The XRD spectrum obtained by the GIXD measurement shown in FIG. 1 is simply referred to as the XRD spectrum. 3(B) is the XRD spectrum of the quartz glass substrate, and FIG. 13(C) is the XRD spectrum of the crystalline IGZO film. The composition of the crystalline IGZO film shown in FIG. 13(C) is In:Ga:Zn=4:2:3. [Atomic ratio]. The thickness of the crystalline IGZO film shown in FIG. 13(C) is 500 nm.

[0346] As shown by the arrow in FIG. 13(B), the shape of the peak in the XRD spectrum of the quartz glass substrate On the other hand, as shown by the arrow in Figure 13(C), the crystalline IGZO film In the case of Cr-Al-Al-Si, the shape of the peak in the XRD spectrum is asymmetric. The asymmetric shape of the crystals indicates the presence of crystals in the film or substrate. If the peak shape of the XRD spectrum is not symmetrical, the film or substrate is amorphous. In addition, in FIG. 13(C), crystals are not observed at or near 2θ=31°. The IGZO crystal phase is clearly indicated. The asymmetric peaks are due to the diffraction peaks of the crystalline phase (microcrystals). It is presumed that.

[0347] Specifically, the interference of X-rays scattered by atoms in IGZO is 2θ=34° or It is assumed that the small crystals contribute to the peaks around 2θ=31°. It is assumed that this contributes to the peak in the vicinity of In the D spectrum, the peak width on the low angle side at or near 2θ=34° is This is due to the presence of a peak at or near 2θ=31° in the crystalline IGZO film. This suggests that the material contains tiny crystals that

[0348] The crystal structure of the film or substrate was also analyzed by nano-beam electron diffraction (NBED). Diffraction patterns observed by electron diffraction (ultra-microelectron The quartz glass substrate and the substrate temperature The diffraction patterns of the IGZO films formed at room temperature are shown in Fig. 13(D) and Fig. 13(E), respectively. ) are shown in Fig. 13(D) and Fig. 13(E) respectively. The IGZO film shown in FIG. 13(E) has a composition of In:Ga:Zn=1:1:1 [atomic number The film is formed by sputtering using an oxide target with a [ratio]. In the microelectron diffraction method, electron diffraction is performed with a probe diameter of 1 nm.

[0349] As shown in FIG. 13(D), a halo was observed in the diffraction pattern of the quartz glass substrate. It can be confirmed that the silica glass is in an amorphous state. In addition, the diffraction pattern of the IGZO film formed at room temperature shows spot-like patterns rather than halos. Therefore, the IGZO film formed at room temperature is not in a crystalline state, but in an amorphous state. However, it is presumed that the crystal is not in an crystalline state, but in an intermediate state, and it cannot be concluded that the crystal is in an amorphous state.

[0350] <<Structure of oxide semiconductor>> Note that oxide semiconductors may be classified differently from those shown in FIG. For example, oxide semiconductors include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. As a non-single crystal oxide semiconductor, for example, the above-mentioned CAAC-O In addition, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, pseudo-single-crystal oxide semiconductors, and nc-OS. Amorphous-like oxide semiconductor (a-like OS) e semiconductor), amorphous oxide semiconductor, etc.

[0351] Here, for details of the above-mentioned CAAC-OS, nc-OS, and a-like OS, Provide an explanation.

[0352] [CAAC-OS] CAAC-OS has multiple crystalline regions, and the multiple crystalline regions have c-axes aligned in a specific direction. The specific direction is the thickness direction of the CAAC-OS film. The normal direction of the surface on which the CAAC-OS film is formed, or the normal direction of the surface of the CAAC-OS film. A crystalline region is a region in which the atomic arrangement has periodicity. When considered as an arrangement, the crystalline region is also a region with a uniform lattice arrangement. S has a region in which multiple crystal regions are connected in the ab-plane direction, and the region has distortion. The distortion may occur in the lattice arrangement in the area where multiple crystal regions are connected. A place where the lattice orientation changes between a uniform area and a different uniform area. In other words, the CAAC-OS has a c-axis orientation and no clear orientation in the ab-plane direction. It is an oxide semiconductor that does not have a

[0353] Each of the multiple crystalline regions is made up of one or more minute crystals (maximum diameter 10n If the crystalline region is made up of a single tiny crystal, The maximum diameter of the crystalline region is less than 10 nm. In addition, the crystalline region is composed of many tiny crystals. In such a case, the size of the crystalline region may be approximately several tens of nm.

[0354] In-M-Zn oxide (where element M is aluminum, gallium, yttrium, or tin) In the case of the CAAC-OS, one or more selected from the group consisting of indium, titanium, etc. A layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the In layer) are A layer having a layer structure (hereinafter, the (M,Zn) layer) is laminated. ) In addition, indium and element M can be substituted for each other. Therefore, The (M,Zn) layer may contain indium. The In layer may contain the element M. The In layer may contain Zn. The layered structure may be, for example, In high-resolution TEM images, it is observed as a lattice image.

[0355] For example, when the structure of the CAAC-OS film is analyzed using an XRD device, the θ / 2θ shift In the out-of-plane XRD measurement using a slit, the peak indicating the c-axis orientation was = 31° or in the vicinity. Note that the position of the peak indicating the c-axis orientation (value of 2θ) may vary depending on the type and composition of the metal elements constituting the CAAC-OS.

[0356] For example, in the electron diffraction pattern of the CAAC-OS film, multiple bright spots (spots) ) is observed. Note that one spot and another spot are the same as the incident electron beam that has passed through the sample. The spot (also called the direct spot) is the center of symmetry and the observations are made at positions that are point-symmetric. .

[0357] When the crystalline region is observed from the specific direction, the lattice arrangement in the crystalline region is a hexagonal lattice. The unit cell is not necessarily a regular hexagon, but may be a non-regular hexagon. The above distortion may have a lattice arrangement such as a pentagon or heptagon. In the OS, clear grain boundaries were confirmed even in the vicinity of the strain. In other words, the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because the arrangement of oxygen atoms in the CAAC-OS is dense in the ab-plane direction. The lack of a metal atom and the change in bond distance between atoms due to the substitution of metal atoms, This is believed to be because distortion can be tolerated.

[0358] The crystal structure in which clear grain boundaries are observed is called polycrystal. The grain boundaries act as recombination centers, trapping carriers and forming on-states in transistors. It is highly likely that this will cause a decrease in the on-state current and a decrease in the field effect mobility. CAAC-OS, in which no grain boundaries are observed, has a crystal structure suitable for the semiconductor layer of a transistor. CAAC-OS is one of the crystalline oxides that have Zn. For example, In-Zn oxide and In-Ga-Zn oxide are preferably In oxide. This is preferable because it can suppress the generation of grain boundaries more effectively than the above-mentioned materials.

[0359] The CAAC-OS is an oxide semiconductor with high crystallinity and no clear crystal grain boundaries. Therefore, it can be said that the CAAC-OS is less susceptible to the decrease in electron mobility caused by grain boundaries. In addition, the crystallinity of an oxide semiconductor may be reduced due to the inclusion of impurities or the generation of defects. Therefore, CAAC-OS is similar to oxide semiconductors with few impurities and defects (such as oxygen vacancies). Therefore, the physical properties of the oxide semiconductor having the CAAC-OS are stable. Therefore, oxide semiconductors having CAAC-OS have high heat resistance and reliability. -OS is stable even under high temperatures (so-called thermal budget) during the manufacturing process Therefore, using CAAC-OS for OS transistors can expand the flexibility of the manufacturing process. This makes it possible.

[0360] [nc-OS] The nc-OS is a nano-sized area (e.g., an area of ​​1 nm to 10 nm, especially 1 nm to 3 nm). In other words, nc-OS has a periodic atomic arrangement in the region of microscopic The size of the minute crystals is, for example, 1 nm or more and 10 nm or less. In particular, since the size of these tiny crystals is between 1 nm and 3 nm, they are also called nanocrystals. In nc-OS, there is no regularity in the crystal orientation between different nanocrystals. No orientation is observed. Therefore, depending on the analysis method, nc-OS may be considered as a-like OS. For example, in the case of an nc-OS film, XR When structural analysis was performed using the D instrument, out-of-plane θ / 2θ scans were used. No peaks indicating crystallinity were detected in the XRD measurement. Electron diffraction (control) using an electron beam with a probe diameter larger than that of a silicon crystal (e.g., 50 nm or more). When electron diffraction (also called limited-field electron diffraction) is performed, a diffraction pattern resembling a halo pattern is observed. On the other hand, for the nc-OS film, the probes were close to or smaller than the nanocrystals. Electron beam diffraction using an electron beam with a diameter of 1 nm or more and 30 nm or less (nanobeam electron beam) When the light is diffracted, multiple light beams are generated within a ring-shaped area centered on the direct spot. An electron diffraction pattern may be obtained in which the spots are observed.

[0361] [a-like OS] The a-like OS is an oxide semiconductor that has a structure between the nc-OS and the amorphous oxide semiconductor. Conductive. A-like OS has voids or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS. The OS has a higher hydrogen concentration in the film than the nc-OS and CAAC-OS.

[0362] <<Oxide semiconductor structure>> Next, the details of the above-mentioned CAC-OS will be described. Regarding.

[0363] [CAC-OS] CAC-OS is, for example, a metal oxide made up of elements with a size of 0.5 nm to 10 nm. Preferably, the material is unevenly distributed in a size range of 1 nm to 3 nm or less, or in the vicinity thereof. In the following, it is assumed that one or more metal elements are unevenly distributed in a metal oxide. The region having the metal element has a thickness of 0.5 nm to 10 nm, preferably 1 nm to 3 nm. A state where the pixels are mixed at or near the size is called a mosaic or patch pattern.

[0364] Furthermore, CAC-OS is a mosaic material that is separated into a first region and a second region. The first region is in a cloud-like shape, and the first region is distributed throughout the film (hereinafter, also referred to as a cloud-like shape). In other words, the CAC-OS is a system in which the first region and the second region are mixed. It is a composite metal oxide having the following structure.

[0365] Here, the In ratio to the metal elements constituting the CAC-OS in the In-Ga-Zn oxide is The atomic ratios of In, Ga, and Zn are expressed as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS of In-Ga-Zn oxide, the first region is In] is larger than [In] in the composition of the CAC-OS film. The region is a region where [Ga] is larger than [Ga] in the composition of the CAC-OS film. Or, for example, the first region has a larger [In] than the second region. The first region has a smaller Ga than the first region. In the second region, [Ga] is larger than [Ga] in the first region, and [In] is , which is a region smaller than [In] in the first region.

[0366] Specifically, the first region is mainly composed of indium oxide, indium zinc oxide, etc. The second region is a region in which gallium oxide, gallium zinc oxide, etc. In other words, the first region is called the region in which In is the main component. The second region can be rephrased as a region containing Ga as the main component. This can be done.

[0367] In addition, there are cases where a clear boundary between the first region and the second region cannot be observed.

[0368] In addition, CAC-OS in In-Ga-Zn oxide is a compound that consists of In, Ga, Zn, and O. In the material composition containing Ga, there is a region mainly composed of Ga and a region mainly composed of In. The regions are arranged in a random pattern, with the regions being in a mosaic pattern. Therefore, it is speculated that CAC-OS has a structure in which metal elements are distributed non-uniformly. .

[0369] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas and The gas to be used should be selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. In addition, the ratio of oxygen gas to the total flow rate of the deposition gas during deposition may be The lower the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during deposition, the more preferable. It is preferable to set the flow rate ratio to be 0% or more and less than 30%, and more preferably 0% or more and 10% or less.

[0370] For example, in the CAC-OS of In-Ga-Zn oxide, the energy dispersive X Energy Dispersive X-ray spectroscopy (EDX) The EDX mapping obtained using scopy revealed that the In-based region (the first The structure is one in which the first region (the first region) and the second region (the second region) mainly composed of Ga are unevenly distributed and mixed. It can be confirmed that it has.

[0371] Here, the first region is a region having a higher conductivity than the second region. When carriers flow through this region, the metal oxide exhibits electrical conductivity. The first region is distributed in a cloud-like shape in the metal oxide, resulting in high field-effect mobility (μ ) can be achieved.

[0372] On the other hand, the second region is a region having a higher insulating property than the first region. The regions are distributed in the metal oxide, so that leakage current can be suppressed.

[0373] Therefore, when the CAC-OS is used in a transistor, the conductivity due to the first region and the conductivity due to the second region are different. The insulating properties of the second region act in a complementary manner to provide switching functionality. (On / Off function) can be given to CAC-OS. OS is a material that has a conductive function in part and an insulating function in other part. The whole has the function of a semiconductor. By separating the conductive function from the insulating function, Therefore, the CAC-OS can be used as a transistor. By using on ), high field effect mobility (μ), and good switching A switching operation can be realized.

[0374] In addition, transistors using CAC-OS have high reliability. It is ideal for various semiconductor devices including display devices.

[0375] Oxide semiconductors have a variety of structures, each of which has different characteristics. Oxide semiconductors include amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, and CA Two or more of C-OS, nc-OS, and CAAC-OS may be included.

[0376] <Transistor Having Oxide Semiconductor> Next, the case where the oxide semiconductor is used for a transistor will be described.

[0377] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility can be realized. In addition, a highly reliable transistor can be realized.

[0378] It is preferable to use an oxide semiconductor having a low carrier concentration for the transistor. For example, The carrier concentration of oxide semiconductors is 1×10 17 cm -3 Less than or equal to 1×10 15 cm -3 Less than 1×10, more preferably 13 cm-3 Less than or equal to 1×10 11 c m -3 Less than 1×10, more preferably 10 cm -3 Less than 1 x 10 -9 cm -3 In addition, in order to reduce the carrier concentration of the oxide semiconductor film, The impurity concentration in the conductor film may be reduced to reduce the defect level density. A low impurity concentration and a low defect level density are called high purity intrinsic or substantially high purity intrinsic. Note that the oxide semiconductor having a low carrier concentration is a highly purified intrinsic or substantially highly purified intrinsic semiconductor. It may be called an oxide semiconductor.

[0379] In addition, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states. Therefore, the trap level density may be low.

[0380] In addition, it takes a long time for the charges trapped in the trap states of the oxide semiconductor to disappear. Therefore, the trap level density is high. A transistor in which a channel formation region is formed in an oxide semiconductor has unstable electrical characteristics. There are cases.

[0381] Therefore, in order to stabilize the electrical characteristics of a transistor, the impurity concentration in the oxide semiconductor is In order to reduce the impurity concentration in the oxide semiconductor, It is also preferable to reduce the impurity concentration in the adjacent film. These include potassium metal, alkaline earth metals, iron, nickel, silicon, etc.

[0382] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0383] When an oxide semiconductor contains silicon or carbon, which is one of the group 14 elements, it becomes an oxide. Defect levels are formed in the semiconductor. This causes the silicon and carbon in the oxide semiconductor to The concentration of silicon and carbon near the interface with the oxide semiconductor (Secondary Ion Mass Spectroscopy ( By SIMS (Secondary Ion Mass Spectrometry) The resulting concentration is 2 x 10 18 atoms / cm 3 Less than or equal to 2×10 17 at oms / cm 3 The following applies.

[0384] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels are formed. Therefore, alkali metals or alkaline earth metals may form carriers. A transistor using an oxide semiconductor containing such a metal oxide tends to be normally on. Therefore, the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS The concentration of is 1×10 18 atoms / cm 3 Less than or equal to 2×10 16 atoms / cm 3 To the following:

[0385] In addition, when nitrogen is contained in an oxide semiconductor, electrons that act as carriers are generated, and the carriers The concentration increases and it becomes easier to make the oxide semiconductor n-type. The transistor using the oxide semiconductor is likely to be normally on. However, when nitrogen is contained, trap states may be formed. The electrical characteristics may become unstable. The nitrogen concentration is 5×10 19 atoms / cm 3 Less than 5 x 10 18 atom s / cm 3 Less than or equal to 1×10 18 atoms / cm 3 The following is more preferable: is 5 x 10 17 atoms / cm 3 To the following:

[0386] In addition, hydrogen contained in the oxide semiconductor reacts with oxygen that bonds with metal atoms to form water. When hydrogen enters the oxygen vacancy, the electron carrier In addition, some of the hydrogen may combine with the oxygen that is bonded to the metal atom to form a carbide. Therefore, it is necessary to use an oxide semiconductor that contains hydrogen. Therefore, hydrogen in the oxide semiconductor It is preferable that the SIM is reduced as much as possible. The hydrogen concentration obtained by S is 1×10 20 atoms / cm 3 Less than 1x1 0 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than, More preferably, 1×10 18 atoms / cm 3 Make it less than.

[0387] To use an oxide semiconductor in which impurities are sufficiently reduced for a channel formation region of a transistor Thus, stable electrical characteristics can be imparted.

[0388] This embodiment mode can be combined with other embodiment modes as appropriate.

[0389] (Embodiment 5) In this embodiment, electronic devices according to one embodiment of the present invention will be described with reference to FIGS. do.

[0390] An electronic device of this embodiment includes a display device according to one embodiment of the present invention in a display portion. Such a display device has high display quality and low power consumption. The device can be easily made larger and with higher resolution. Therefore, it is suitable for use in the display units of various electronic devices. It is possible.

[0391] Examples of electronic devices include television sets, desktop or notebook PCs, etc. Social computers, computer monitors, digital signage, pachinko machines, etc. In addition to electronic devices with relatively large screens such as large game consoles, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals Examples of such devices include audio playback devices, etc.

[0392] In particular, the display device according to one embodiment of the present invention can have a high resolution, and therefore can be used on a relatively small screen. The present invention can be suitably used in electronic devices having a display unit. For example, wristwatch-type or bracelet-type information terminals (wearable devices) and head-mounted displays Head-mounted devices such as VR devices, glasses-type AR devices, and MR devices The present invention can be suitably used for wearable devices that can be attached to equipment.

[0393] The electronic device of this embodiment includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, Distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation (including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays) It may be possible.

[0394] The electronic device of the present embodiment can have various functions. For example, Functions for displaying still images, videos, text images, etc. on the display, touch panel function, calendar Functions such as displaying date or time, and running various software (programs) function, wireless communication function, and function for reading out programs or data recorded on a recording medium etc.

[0395] 14A shows a perspective view of a glasses-type electronic device 900. The electronic device 900 has a pair of A display panel 901, a pair of housings 902, a pair of optical members 903, a pair of mounting parts 904, etc. Yes.

[0396] The electronic device 900 displays an image displayed on the display panel 901 in a display area 906 of the optical member 903. Since the optical member 903 is translucent, the user can project an image. The image displayed in the display area 906 can be viewed superimposed on the transmitted image viewed through 903. Therefore, electronic device 900 is an electronic device capable of AR display.

[0397] The display panel 901 of the electronic device 900 has a function of capturing an image in addition to a function of displaying an image. In this case, the electronic device 900 displays the image via the optical member 903. The panel 901 can receive light incident on it, convert it into an electrical signal, and output it. The system captures the user's eye or the eye and its surroundings, and transmits the image information to the outside or to a The signal can be output to a calculation unit included in the child device 900.

[0398] One of the housings 902 is provided with a camera 905 that can capture an image of the front. Although not shown, a wireless receiver or a cable can be connected to either one of the housings 902. A connector is provided so that a video signal or the like can be supplied to the housing 902. 02, by placing an acceleration sensor such as a gyro sensor, the direction of the user's head can be detected. It is also possible to detect the orientation and display an image in the display area 906 according to the orientation. 902 is preferably provided with a battery, which can be charged wirelessly or by wire. It is preferable to be able to do so.

[0399] A method for projecting an image onto the display area 906 of the electronic device 900 will be described with reference to FIG. 14(B). A display panel 901, a lens 911, and a reflector 912 are provided inside the housing 902. In addition, a half mirror is provided in a portion of the optical member 903 corresponding to a display area 906. The reflecting surface 913 functions as a reflecting surface.

[0400] Light 915 emitted from the display panel 901 passes through the lens 911 and is reflected by the reflector 912. Inside the optical member 903, the light 915 is reflected toward the optical member 903. The light is repeatedly totally reflected at the end surface of 903 and reaches the reflecting surface 913, where it is reflected as an image. As a result, the user can see the light 915 reflected by the reflective surface 913 and the optical Both the reflected light 916 and the light 917 that has passed through the material 903 (including the reflective surface 913) can be seen. .

[0401] FIG. 14 shows an example in which the reflector 912 and the reflecting surface 913 each have a curved surface. This allows greater freedom in optical design compared to when these are flat surfaces, and The thickness of the optical member 903 can be reduced. It may also be a surface.

[0402] The reflector 912 may be a member having a mirror surface, and preferably has a high reflectance. Also, a half mirror utilizing the reflection of a metal film may be used as the reflecting surface 913. However, if a prism that utilizes total reflection is used, the transmittance of the transmitted light 916 can be increased. can.

[0403] Here, the electronic device 900 is a device that detects one of the distance and angle between the lens 911 and the display panel 901. It is preferable that the lens has a mechanism for adjusting either or both of the focus and the lens. It is possible to enlarge or reduce an image. For example, the lens 911 and the display panel 9 One or both of the first and second lenses 01 may be configured to be movable in the direction of the optical axis.

[0404] The electronic device 900 preferably has a mechanism capable of adjusting the angle of the reflector 912 . By changing the angle of the reflector 912, the position of the display area 906 where the image is displayed can be changed. This allows the display area 906 to be displayed at an optimal position according to the position of the user's eyes. It becomes possible to place

[0405] The display device of one embodiment of the present invention can be applied to the display panel 901. The electronic device 900 can thus provide a display with extremely high definition.

[0406] 15(A) and 15(B) are perspective views of a goggle-type electronic device 950. FIG. 15(A) is a perspective view showing the front, top, and left side of electronic device 950, and FIG. 15(B) is a perspective view showing the front, top, and left side of electronic device 950. 9A and 9B are perspective views showing the back, bottom, and right side of electronic device 950.

[0407] The electronic device 950 includes a pair of display panels 951, a housing 952, a pair of mounting parts 954, and a buffer part. The pair of display panels 951 are disposed inside a housing 952. The lens 956 is provided at a position where the lens 956 can be seen.

[0408] The electronic device 950 is an electronic device for VR. A user wearing the electronic device 950 The image displayed on the display panel 951 can be viewed through the lens 956. By displaying different images on the pair of display panels 951, a three-dimensional display using parallax can be realized. It can also be done.

[0409] An input terminal 957 and an output terminal 958 are provided on the rear side of the housing 952. The terminal 957 receives a video signal from a video output device or the like, and charges a battery provided in the housing 952. A cable for supplying power for charging the device can be connected to the output terminal 958. For example, it can function as an audio output terminal, allowing you to connect earphones or headphones. In addition, it is possible to configure the device to output audio data via wireless communication or to output audio data from an external video source. When audio is output from the image output device, the audio output terminal does not need to be provided.

[0410] The electronic device 950 has a lens 956 and a display panel 951 that change according to the position of the user's eyes. It is preferable to have a mechanism for adjusting the left and right positions so that the position is optimal. In addition, the focus can be adjusted by changing the distance between the lens 956 and the display panel 951. It is preferable that the device has a mechanism for

[0411] The display device of one embodiment of the present invention can be applied to the display panel 951. The electronic device 950 can display images with extremely high resolution. This allows the user to feel a high level of immersion.

[0412] The cushioning member 955 is a portion that comes into contact with the user's face (forehead, cheeks, etc.). By fitting the device closely to the user's face, light leakage can be prevented, enhancing the sense of immersion. The cushioning member 955 is adapted to cover the user's face when the user wears the electronic device 950. It is preferable to use a soft material so that it can adhere closely to the surface. For example, rubber, silicone rubber, Materials such as urethane and sponge can be used. If you use a material such as pongee covered with cloth or leather (natural or synthetic leather), This makes it difficult for gaps to form between the user's face and the cushioning material 955, and thus makes it possible to effectively prevent light leakage. The members that come into contact with the user's skin, such as the cushioning member 955 and the attachment part 954, are removable. This is preferable because it allows for easy cleaning and replacement.

[0413] The electronic device 6500 shown in FIG. 16A is a mobile device that can be used as a smartphone. It is an information terminal.

[0414] The electronic device 6500 includes a housing 6501, a display unit 6502, a power button 6503, and a button 65 04, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display unit 6502 has a touch panel function.

[0415] The display device of one embodiment of the present invention can be applied to the display portion 6502.

[0416] FIG. 16B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0417] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501. In the space surrounded by the protective member 6510, a display panel 6511, an optical member 6512, a touch panel 6513, and a touch panel 6514 are arranged. A sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged. .

[0418] The protective member 6510 includes a display panel 6511, an optical member 6512, and a touch sensor panel. The screw 6513 is fixed in place by an adhesive layer (not shown).

[0419] In the area outside the display portion 6502, a part of the display panel 6511 is folded back. The folded part is connected to the FPC6515. C6516 is mounted on the FPC6515. is connected to a child.

[0420] The flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, it is possible to realize extremely lightweight electronic devices. Because it is thin, it is possible to mount a large-capacity battery 6518 while keeping the thickness of the electronic device small. Also, a part of the display panel 6511 can be folded back and the FPC 6515 and the back side of the pixel area can be attached. By arranging the connection parts, it is possible to realize an electronic device with a narrow frame.

[0421] FIG. 17A shows an example of a television device. A television device 7100 includes a housing 71. A display unit 7000 is built into the housing 71. This shows a configuration that supports 01.

[0422] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0423] The television device 7100 shown in FIG. 17A is operated by an operation switch provided in a housing 7101. This can be done by a touch panel or a separate remote control 7111. The display unit 7000 may be provided with a touch sensor, and the television The remote control device 7111 may operate the remote control device 7100. The remote control 7111 may have a display unit for displaying information output from the remote control 7111. The channel and volume can be controlled using the operation keys or touch panel. , the image displayed on the display unit 7000 can be manipulated.

[0424] The television device 7100 includes a receiver and a modem. It is also possible to receive general television broadcasts via wired or wireless connection via a modem. By connecting to a wired communication network, it can be one-way (sender to receiver) or two-way It is also possible to communicate information in both directions (between sender and receiver, or between receivers). do.

[0425] FIG. 17B shows an example of a notebook personal computer. The computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and a 213, an external connection port 7214, etc. The display unit 7000 is incorporated in the housing 7211. It is being read.

[0426] The display device of one embodiment of the present invention can be applied to the display portion 7000.

[0427] 17(C) and 17(D) show an example of digital signage.

[0428] A digital signage 7300 shown in FIG. 17C includes a housing 7301, a display unit 7000, and and a speaker 7303. In addition, LED lamps, operation keys (power switch, may have a control switch, connection terminals, various sensors, a microphone, etc. do.

[0429] FIG. 17(D) shows a digital signage 7400 attached to a cylindrical pole 7401. The digital signage 7400 is a display unit 7000 provided along the curved surface of a pillar 7401. has.

[0430] In FIG. 17C and FIG. 17D, the display device of one embodiment of the present invention is provided in the display portion 7000. can be applied.

[0431] The larger the display unit 7000, the more information can be displayed at one time. The wider the area, the more visible it is, and the more effective your advertising will be. Cut.

[0432] By applying a touch panel to the display unit 7000, images or videos can be displayed on the display unit 7000. It is also preferable because it not only shows the route information but also allows users to operate it intuitively. Or when used to provide information such as traffic information, intuitive operation is required. This can improve usability.

[0433] Also, as shown in FIG. 17(C) and FIG. 17(D), a digital signage 7300 or Digital signage 7400 is a device that displays information on smartphones and other information terminals 731 carried by users. 1 or the information terminal 7411 via wireless communication. The advertisement information displayed on the display unit 7000 is input to the information terminal 7311 or the information terminal 741. 1. Also, the information terminal 7311 or the information terminal 741 By operating 1, the display on the display unit 7000 can be changed.

[0434] In addition, the digital signage 7300 or the digital signage 7400 is provided with an information terminal 7 311 or the screen of the information terminal 7411 is used as a control means (controller) to play games. This allows an unspecified number of users to participate in the game at the same time and have fun. It is possible to do so.

[0435] The electronic device shown in FIG. 18(A) to FIG. 18(F) includes a housing 9000, a display unit 9001, a speaker, and a 9003, operation keys 9005 (including power switch or operation switch), connection terminal 9006, Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light , liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow (including functions to measure volume, humidity, gradient, vibration, odor or infrared light), 9008, etc.

[0436] The electronic devices shown in FIG. 18(A) to FIG. 18(F) have various functions. The function to display information (still images, videos, text images, etc.) on the display unit, touch panel function, Rendering, date or time display, and other functions by various software (programs) a function for controlling processing by wireless communication, a program or device recorded on a recording medium, The electronic device may have the function of reading and processing the data. The electronic device may have a variety of functions, but is not limited to the above. Also, a camera or the like may be provided in the electronic device to take still images or videos and store them on a recording medium (external or The camera has the functions of storing the captured image on a computer or built-in camera, and displaying the captured image on the display unit. It's fine.

[0437] The electronic devices shown in Figs. 18(A) to 18(F) will be described in detail below.

[0438] FIG. 18A is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 is For example, it can be used as a smartphone. A portable information terminal 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The terminal 9101 can display text and image information on multiple surfaces. 9 shows an example in which three icons 9050 are displayed. 51 may be displayed on another surface of the display unit 9001. An example of the information 9051 is as follows: Notifications of incoming e-mails, SNS, phone calls, etc., subject lines of e-mails and SNS, sender names , date and time, time, remaining battery level, antenna reception strength, etc. An icon 9050 or the like may be displayed in the position where is displayed.

[0439] FIG. 18B is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 includes: The display unit 9001 has a function of displaying information on three or more screens. In the example shown in FIG. 9, information 9053 and information 9054 are displayed on different sides. The user holds the mobile information terminal 9102 in the breast pocket of his / her clothes. The user can also check information 9053 displayed in a position that can be observed from above 2. The user can check the display without taking the mobile information terminal 9102 out of his / her pocket, and can make a call, for example. You can decide whether or not to receive it.

[0440] FIG. 18C is a perspective view showing a wristwatch-type mobile information terminal 9200. The display unit 9001 can be used as a smart watch, for example. The display surface is curved, and the display can be performed along the curved display surface. The portable information terminal 9200 can communicate with, for example, a wireless headset. The mobile information terminal 9200 can also be used for hands-free conversation. The 9006 can transmit data to and from other information terminals and can also charge the device. The charging operation may be performed by wireless power supply.

[0441] 18(D) to 18(F) are perspective views showing a foldable portable information terminal 9201. FIG. 18(D) shows the portable information terminal 9201 in an unfolded state, and FIG. 18(F) shows the portable information terminal 9201 in a folded state. Figure 18(E) shows the state where the two are changing from Figure 18(D) to Figure 18(F). The portable information terminal 9201 is highly portable when folded and is unfolded and is in a perspective view. When the display is turned on, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the display device 9001 is made up of three housings 9000 connected by hinges 9055. For example, the display unit 9001 has a radius of curvature of 0.1 mm or more and 150 mm or less. It can be bent with.

[0442] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0443] C1 Capacitive element GL1 scan line GL2 scan line SW21 Switch SW22 Switch 100A display device 100B display device 100C display device 100D display device 100E display device 100F display device 100G display device 100H display device 101 Substrate 102 Protective layer 103 Insulating layer 104 Insulating layer 106 Insulating Layer 107a Conductive layer 107b Conductive layer 108 Insulating layer 110a light emitting diode 110b Light emitting diode 110c Light Emitting Diode 110d light emitting diode 112 Electrode 113 Semiconductor layer 114 Light-emitting layer 115 Semiconductor layer 116 Electrode 117a Conductor 117b Conductor 117c conductor 117d conductor 118a conductive layer 118b Conductive layer 120a transistor 120b transistor 122 Insulating layer 123 Insulating Layer 124a conductive layer 124b Conductive layer 125 Filled bed 126 Protective layer 127 Conductive Layer 128 Laser Light 130a transistor 130b transistor 131 Substrate 132 Element isolation layer 133 Low resistance region 134 Insulating Layer 135 Conductive Layer 136 Insulating Layer 137 Conductive Layer 138 Conductive Layer 139 Insulating Layer 141 Insulating layer 142 Conductive Layer 143 Insulating Layer 150A LED Board 150B Circuit Board 151 Substrate 152 Insulating layer 161 Conductive Layer 161a Conductive layer 162 Insulating Layer 163 Insulating Layer 164 Insulating Layer 165 Metal Oxide Layer 166 Conductive Layer 167 Insulating Layer 168 Conductive Layer 181 Insulating Layer 182 Insulating Layer 183 Insulating Layer 184a conductive layer 184b Conductive layer 184c conductive layer 184d Conductive layer 185 Insulating Layer 186 Insulating Layer 187 Conductive Layer 188 Insulating Layer 189 Conductive Layer 190a Conductive layer 190b conductive layer 190c conductive layer 190d Conductive layer 191 Substrate 192 Adhesive layer 200 pixels 200A Transistor 200B Transistor 205 Conductors 205a Conductor 205b Conductor 210 Light emitting element 212 Insulators 214 Insulators 216 Insulators 222 Insulators 224 Insulators 230 Oxides 230a Oxide 230b Oxide 230c oxide 230d Oxide 240 Conductors 240a Conductor 240b conductor 241 Insulators 241a Insulator 241b Insulator 242 Conductors 242a Conductor 242b Conductor 243 Oxide 243a Oxide 243b Oxide 246 Conductors 246a Conductor 246b Conductor 250 Insulator 254 Insulator 260 Conductors 260a Conductor 260b conductor 271a Insulators 271b Insulators 274 Insulators 280 Insulator 282 Insulators 283 Insulators 286 Insulators 287 Insulators 900 Electronic equipment 901 Display Panel 902 Case 903 Optical components 904 Mounting part 905 Camera 906 Display area 911 Lens 912 Reflector 913 Reflective surface 915 light 916 Transmitted light 950 Electronic equipment 951 Display Panel 952 Case 954 Mounting part 955 Cushioning material 956 Lens 957 Input terminal 958 Output terminal 6500 Electronic equipment 6501 Case 6502 Display section 6503 Power button 6504 Button 6505 Speaker 6506 Microphone 6507 Camera 6508 Light source 6510 Protective materials 6511 Display Panel 6512 Optical components 6513 Touch Sensor Panel 6515 FPC 6516 IC 6517 Printed Circuit Board 6518 Battery 7000 Display 7100 Television equipment 7101 Case 7103 Stand 7111 Remote control device 7200 Notebook Personal Computer 7211 Case 7212 Keyboard 7213 Pointing Device 7214 External connection port 7300 Digital Signage 7301 Case 7303 Speaker 7311 Information terminal 7400 Digital Signage 7401 Pillar 7411 Information terminal 9000 Chassis 9001 Display section 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Icon 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9101 Portable information terminal 9102 Portable information terminal 9200 Mobile Information Terminal 9201 Mobile information terminals

Claims

1. A display device including a first insulating layer, a second insulating layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, a color conversion layer, and a driver circuit, the first transistor is electrically connected to the first light emitting diode; the second transistor is electrically connected to the second light emitting diode; the first insulating layer is located on the first transistor and on the second transistor; the first light emitting diode and the second light emitting diode are located on the first insulating layer; the color conversion layer is located on the second light emitting diode; the color conversion layer has a function of converting light emitted by the second light emitting diode into light with a longer wavelength; the color conversion layer does not overlap the first light emitting diode, the first transistor and the second transistor each have a metal oxide layer and a gate electrode; the metal oxide layer has a channel forming region; the height of the upper surface of the gate electrode is equal to or approximately equal to the height of the upper surface of the second insulating layer; the drive circuit includes a third transistor; the third transistor has a channel formation region in a semiconductor substrate; The semiconductor substrate overlaps with each of the first transistor, the second transistor, the first light-emitting diode, and the second light-emitting diode via a third insulating layer.

2. In claim 1, the first transistor further comprises a gate insulating layer, a first conductive layer, and a second conductive layer; the metal oxide layer has a first region overlapping the first conductive layer, a second region overlapping the second conductive layer, and a third region between the first region and the second region; the first conductive layer and the second conductive layer are spaced apart from each other on the metal oxide layer; the second insulating layer is located on the first conductive layer and on the second conductive layer; the second insulating layer has an opening overlapping the third region; the gate insulating layer is located inside the opening and overlaps a side surface of the second insulating layer and an upper surface of the third region; the gate electrode is located inside the opening and overlaps with a side surface of the second insulating layer and an upper surface of the third region via the gate insulating layer.

3. A display device including a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first transistor, a second transistor, a first light-emitting diode, a second light-emitting diode, a color conversion layer, and a driver circuit, the first transistor is electrically connected to the first light emitting diode through the first conductive layer; the second transistor is electrically connected to the second light emitting diode through the second conductive layer; the first insulating layer is located on the first transistor and on the second transistor; the first light emitting diode and the second light emitting diode are located on the first insulating layer; the first light emitting diode has a first electrode in contact with the first conductive layer; the second light emitting diode has a second electrode in contact with the second conductive layer; a height of an upper surface of the first electrode and a height of an upper surface of the second electrode are equal to or approximately equal to a height of an upper surface of the second insulating layer; the color conversion layer is located on the second light emitting diode; the color conversion layer has a function of converting light emitted by the second light emitting diode into light with a longer wavelength; the color conversion layer does not overlap the first light emitting diode, the first transistor and the second transistor each have a metal oxide layer; the metal oxide layer has a channel forming region; the drive circuit includes a third transistor; the third transistor has a channel formation region in a semiconductor substrate; The semiconductor substrate overlaps with each of the first transistor, the second transistor, the first light-emitting diode, and the second light-emitting diode via a third insulating layer.

4. In any one of claims 1 to 3, The color conversion layer is in contact with the second light emitting diode.

5. In any one of claims 1 to 3, Further, a fourth insulating layer is provided, the fourth insulating layer is located between the second light emitting diode and the color conversion layer; The color conversion layer is in contact with the fourth insulating layer.

6. In any one of claims 1 to 5, The display device, wherein the first light emitting diode and the second light emitting diode are each a micro light emitting diode.

7. In any one of claims 1 to 6, A display device, wherein the first light emitting diode and the second light emitting diode each emit blue light.

8. In any one of claims 1 to 7, The display device, wherein the first transistor and the second transistor have a structure in which one or both of a channel length and a channel width are different from each other.

9. In any one of claims 1 to 8, Further, the film has a colored layer, the coloring layer is located on the color conversion layer, The light emitted from the second light emitting diode is extracted to the outside of the display device via the color conversion layer and the colored layer.

10. A display module comprising the display device according to any one of claims 1 to 9 and a connector or an integrated circuit.

11. A display module according to claim 10; An electronic device having at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.

Images