Light-emitting device

Abstract

To provide a display device having high brightness and excellent white balance.SOLUTION: The display device comprises a first display element, a second display element, a first transistor, and a second transistor. The first display element includes a luminous layer and is electrically connected to the first transistor. The first transistor includes a first semiconductor film, a first gate electrode and a second gate electrode arranged facing each other with the first semiconductor film interposed therebetween, and a first source electrode and a first drain electrode which are in contact with the first semiconductor film. The second gate electrode is electrically connected to the first source electrode or the first drain electrode. The second display element includes a luminous layer and is electrically connected to the second transistor. The second transistor includes a second semiconductor film, and a third gate electrode and a fourth gate electrode arranged facing each other with the second semiconductor film interposed therebetween. The fourth gate electrode is electrically connected to the third gate electrode.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device and a manufacturing method thereof.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one aspect of the present invention relates to an object, a method, or a manufacturing method. One aspect of the present invention is a process, machine, manufacture, or composition of matter. Therefore, the present invention disclosed in this specification more specifically relates to the The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, and a , their driving methods, or their manufacturing methods can be given as examples. [Background technology]

[0003] A light source that emits surface light is used as a backlight, and a transmissive liquid crystal display device is combined. There is known a liquid crystal display device that achieves both reduced power consumption and suppressed deterioration of display quality by using the above method ( (See Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2011-248351 A Summary of the Invention [Problem to be solved by the invention]

[0005] In recent years, there has been a demand for high-definition, high-brightness display devices. However, as pixel sizes become smaller, The area of ​​the transistors and wiring per pixel is increased, resulting in a lower pixel aperture ratio. This reduces the amount of light available from each pixel.

[0006] In view of the above, an object of one embodiment of the present invention is to provide a display device with high luminance. Another object of one embodiment of the present invention is to provide a display device with excellent white balance. Another object of one embodiment of the present invention is to provide a high-definition display device. Another object of one embodiment of the present invention is to provide a display device that is highly convenient. Another object of one embodiment of the present invention is to provide a novel display device.

[0007] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. Other issues can be extracted from the drawings, claims, etc. [Means for solving the problem]

[0008] One embodiment of the present invention is a display device including a first display element and a second display element having a lower luminance than the first display element. a first transistor electrically connected to the first display element; and a second transistor electrically connected to the second display element. and a second transistor connected to the first transistor. Each of the two transistors has a first gate electrode and a second gate electrode with a semiconductor film therebetween. The first gate electrode of the first transistor is connected to a source electrode or a drain electrode. The first gate of the second transistor is electrically connected to the first display element together with the first electrode. The first gate electrode of the first transistor and the second gate electrode are electrically connected to each other. The first electrode and the source electrode or the drain electrode are electrically connected to the first display element. This has the effect of controlling the threshold voltage of the first transistor and the threshold voltage of the second transistor. The first gate electrode and the second gate electrode of the second display element are electrically connected to each other. The current flowing through the second display element can be increased to make the luminance of the second display element higher than that of the first display element. As a result, a display having a first display element and a second display element can be provided. This can increase the brightness of the display device and improve the white balance.

[0009] One embodiment of the present invention is a display device including a first display element, a second display element, a first transistor, and a second transistor. and a transistor, and the first display element has a first light-emitting layer, and the first display element The first transistor is electrically connected to a first semiconductor film, a first gate electrode and a second gate electrode arranged opposite to each other with a first semiconductor film interposed therebetween; a first source electrode and a first drain electrode in contact with the first semiconductor film; The first source electrode is electrically connected to the first source electrode or the first drain electrode, and the second display The element has a second light-emitting layer, and the second display element is electrically connected to the second transistor. The second transistor is disposed opposite to the second semiconductor film via the second semiconductor film. a third gate electrode and a fourth gate electrode, the fourth gate electrode being The display device is electrically connected to the light emitting electrode.

[0010] Another embodiment of the present invention is a display device including a first display element, a second display element, a first transistor, and and a second transistor. The first display element has a first light-emitting layer and the first transistor. The transistor includes a first semiconductor film and a first gate electrode disposed opposite to the first semiconductor film. a first source electrode and a second gate electrode, and a first drain electrode and a second drain electrode on the first semiconductor film. and a first source electrode and a first drain electrode, one of the first source electrode and the first drain electrode being connected to a second gate electrode. the first source electrode and the first drain electrode are electrically connected to the first A second display element electrically connected to the display element has a second light-emitting layer and a second transistor. The gate electrode includes a second semiconductor film and a third gate electrode disposed opposite the second semiconductor film. and a fourth gate electrode, a second source electrode and a second drain electrode in contact with the second semiconductor film. a fourth gate electrode electrically connected to the third gate electrode and a second gate electrode One of the source electrode and the second drain electrode is electrically connected to the second display element. It is a device.

[0011] In another embodiment of the present invention, in the above-described display device, the first light-emitting layer is a red, green, or white light-emitting layer. It is preferable that the first light-emitting layer emits any one of the above light-emitting layers, and the second light-emitting layer emits blue light.

[0012] In addition, one embodiment of the present invention is a display device further including a third display element. The display element preferably has a liquid crystal layer.

[0013] Further, one embodiment of the present invention is a display device in which either the first light-emitting layer or the second light-emitting layer is a It is preferable that one of them has a function of emitting light toward the liquid crystal layer side.

[0014] Further, one embodiment of the present invention is a display device in which the first transistor and the second transistor It is preferable that one of the transistors has a metal oxide in the semiconductor film.

[0015] Another embodiment of the present invention is a display module including the above-described display device and a touch sensor. It is.

[0016] Another embodiment of the present invention is a display device including the above-described display module and an operation key or is an electronic device having a battery and. Effect of the Invention

[0017] According to one embodiment of the present invention, a display device with high luminance can be provided. A display device having excellent white balance can be provided. According to one embodiment of the present invention, a display device with excellent convenience can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0018] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other effects from the descriptions in the claims, etc. [Brief description of the drawings]

[0019] [Figure 1] 1A and 1B are a circuit diagram and a top view showing a layout of a pixel. [Diagram 2] FIG. 1 is a block diagram illustrating a display device. [Diagram 3] FIG. 2 is a schematic diagram illustrating a display region of a display element. [Figure 4] FIG. 2 is a top view illustrating a structure of a pixel included in a display device. [Diagram 5] FIG. 1 is a cross-sectional view illustrating a structure of a pixel included in a display device. [Figure 6]FIG. 1 is a cross-sectional view illustrating a structure of a pixel included in a display device. [Figure 7] 1A to 1C are top views illustrating a method for manufacturing a pixel included in a display device. [Figure 8] 1A to 1C are top views illustrating a method for manufacturing a pixel included in a display device. [Figure 9] 1A to 1C are top views illustrating a method for manufacturing a pixel included in a display device. [Figure 10] 1A to 1C are top views illustrating a method for manufacturing a pixel included in a display device. [Figure 11] 1A to 1C are top views illustrating a method for manufacturing a pixel included in a display device. [Figure 12] 1A to 1C are top views illustrating a method for manufacturing a pixel included in a display device. [Figure 13] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 14] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 15] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 16] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 17] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 18] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 19] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 20] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 21] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 22] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Diagram 23] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Figure 24] 1A to 1C are cross-sectional views illustrating a method for manufacturing a pixel included in a display device. [Diagram 25] FIG. 1 is a perspective view showing an example of a touch panel. [Figure 26]FIG. 1 is a cross-sectional view showing an example of a touch sensor. [Figure 27] FIG. 1 is a cross-sectional view showing an example of a touch panel. [Figure 28] 3A and 3B are a block diagram and a timing chart of a touch sensor. [Figure 29] FIG. 2 is a diagram illustrating a display module. [Diagram 30] 1A to 1C are diagrams illustrating electronic devices. [Diagram 31] FIG. 1 is a perspective view illustrating a display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Hereinafter, the embodiments will be described with reference to the drawings. The present invention may be embodied in various different forms without departing from its spirit and scope. It will be readily understood by those skilled in the art that various modifications and changes may be made to the embodiments and details of the present invention. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0021] Also, in the drawings, the size, layer thickness, or area are exaggerated for clarity. Therefore, the scale is not necessarily limited to that shown in the drawings. The drawings are merely schematic illustrations and are not limited to the shapes or values ​​shown in the drawings.

[0022] In addition, the ordinal numbers "first," "second," and "third" used in this specification refer to the components of the It should be noted that this is added to avoid confusion and is not intended to limit the numbers.

[0023] In addition, in this specification, the words "above" and "below" indicating the position of the components are used. The positional relationship is used for convenience in describing the drawings. The relationship changes depending on the direction in which each component is depicted. The above words and phrases are not limited to those used above, but can be rephrased appropriately depending on the situation.

[0024] In this specification, a transistor includes a gate, a drain, and a source. The drain terminal is a diode that has at least three terminals. Between the drain region or drain electrode and the source (source terminal, source region or source electrode) A channel forming region is formed between the source and drain through the channel forming region. In this specification and the like, the term "channel formation region" refers to a refers to the region through which current mainly flows.

[0025] In addition, the functions of the source and drain may differ depending on whether transistors of different polarities are used or the circuit In operation, when the direction of the current changes, the positions may be reversed. In the specification, the terms source and drain may be used interchangeably. do.

[0026] In addition, in this specification, "electrically connected" means "something that has some kind of electrical effect." This includes cases where the device is connected via a "device having some electrical function." "of" is not subject to any particular restrictions as long as it enables the transmission and reception of electrical signals between connected objects. For example, "something that has an electrical effect" includes electrodes, wiring, and transistors. These devices have various functions such as switching elements, resistor elements, inductors, capacitors, etc. This includes elements such as:

[0027] In addition, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the term "conductive layer" can be changed to the term "conductive film." Alternatively, for example, the term "insulating film" may be changed to "insulating layer." It may be possible to change the term to:

[0028] (Embodiment 1) In this embodiment, a display device of one embodiment of the present invention and a manufacturing method of the display device will be described. The description will be made with reference to FIG. 1 to FIG.

[0029] <1-1. Display device configuration> First, the configuration of the display device will be described with reference to FIG. 2. The display device 500 shown in FIG. , a pixel section 502, and gate driver circuit sections 504a and 504b arranged outside the pixel section 502. 04b and a source driver circuit portion 506 disposed outside the pixel portion 502.

[0030] [Pixel section] The pixel units 502 are arranged in X rows (X is a natural number of 2 or more) and Y columns (Y is a natural number of 2 or more). The pixel 10(1,1) through pixel 10(X,Y) are also included. The pixel 10 (X, Y) has a first display element to a third display element. The first display element and the second display element have a different function from the third display element. The second display element has a function of emitting light, and the third display element has a function of reflecting incident light. In addition, the third display element is not provided, and only the first display element and the second display element are provided. The first to third display elements will be described in detail later.

[0031] [Gate driver circuit] The gate driver circuit units 504a and 504b and a part of the source driver circuit unit 506 It is preferable that the entire part is formed on the same substrate as the pixel part 502. The number of items and terminals can be reduced. In the case where a part or the whole of the driver circuit section 506 is not formed on the same substrate as the pixel section 502, In this case, use COG (Chip On Glass) or TAB (Tape Automa A separately prepared driving circuit board (e.g., single crystal semiconductor) is A driving circuit board formed of a semiconductor film or a polycrystalline semiconductor film may be formed in the display device 500. good.

[0032] The gate driver circuit units 504a and 504b are connected to the pixels 10(1,1) to 10 A source driver circuit section 5 has a function of outputting a signal (scanning signal) for selecting (X, Y). 06 is a driving circuit for driving the display elements of the pixels 10(1,1) to 10(X,Y). It has the function of supplying a signal (data signal).

[0033] The gate driver circuit unit 504a is connected to a line through which a scanning signal is applied (hereinafter, the scanning line G L_L[m], scanning line GL_L[m+1], and scanning line GL_L[X]) The gate driver circuit section 504 also has a function of supplying an initialization signal. b is a wiring to which a scanning signal is applied (hereinafter, the scanning line GL_E1[m], the scanning line GL_E1[ m+1], scan line GL_E2[m], scan line GL_E2[m+1], scan line GL_E1[ X], and scanning line GL_E2[X]) or supplying an initialization signal. In the above, m represents a natural number equal to or less than X.

[0034] However, the gate driver circuit units 504a and 504b are not limited to the above functions and may have other functions. It may have the function of controlling or supplying a signal.

[0035] In FIG. 2, the gate driver circuit unit is a gate driver circuit unit 504a In the above example, two gate driver circuits, 504b and 504c, are provided. However, the present invention is not limited to this. Instead, one gate driver circuit unit or three or more gate driver circuit units are provided. This may also be configured.

[0036] [Source driver circuit section] The source driver circuit unit 506 outputs the pixel 10(1,1) to the pixel 10(X , Y), and the wiring to which the data signal is given (signal line SL _L[n], signal line SL_L[n+1], signal line SL_L[Y], signal line SL_E1[n ], Signal line SL_E1[n+1], Signal line SL_E1[Y], Signal line SL_E2[n], A function of controlling the potential of the signal line SL_E2[n+1] and the signal line SL_E2[Y], In the above, n represents a natural number equal to or less than Y. vinegar.

[0037] However, the source driver circuit unit 506 is not limited to the above functions and may generate other signals, The control or supply function may be provided.

[0038] The source driver circuit section 506 is configured using a plurality of analog switches, etc. The source driver circuit unit 506 sequentially turns on a plurality of analog switches. This allows a signal obtained by time-sharing an image signal to be output as a data signal.

[0039] In addition, FIG. 2 illustrates a configuration in which one source driver circuit unit 506 is provided. However, the present invention is not limited to this, and the display device 500 may be provided with a plurality of source driver circuit units. For example, two source driver circuit units may be provided, and one of the source driver circuit units may Controlling the signal lines SL_L[n], SL_L[n+1], and SL_L[Y] , the other source driver circuit unit supplies the signal line SL_E1[n], the signal line SL_E1[n+ 1], Signal line SL_E1[Y], Signal line SL_E2[n], Signal line SL_E2[n+1] , and signal line SL_E2[Y].

[0040] [Pixels] In addition, pixels 10(1,1) to 10(X,Y) are connected to the scanning line GL_L[m] and the scanning line GL_L[m+1], scanline GL_L[X], scanline GL_E1[m], scanline GL_E 1[m+1], scan line GL_E1[X], scan line GL_E2[m], scan line GL_E2[ m+1] and one of the scanning lines GL_E2[X], a pulse signal is input to the signal line S L_L[n], signal line SL_L[n+1], signal line SL_L[Y], signal line SL_E1[ n], signal line SL_E1[n+1], signal line SL_E1[Y], signal line SL_E2[n] , the signal line SL_E2[n+1], and the data signal via one of the signal lines SL_E2[Y]. is entered.

[0041] For example, the pixel 10(m,n) in the mth row and nth column is gated via the scanning line GL_L[m]. A pulse signal is input from the driver circuit unit 504a, and a signal is generated according to the potential of the scanning line GL_L[m]. A data signal is input from the source driver circuit unit 506 via the signal line SL_L[n]. .

[0042] In addition, the pixel 10(m,n) in the mth row and nth column is connected to the scanning line GL_E1[m] and the scanning line GL_ A pulse signal is input from the gate driver circuit unit 504b via E2[m], and the scanning line G L_E1[m] and the signal line SL_E1[n] according to the potential of the scanning line GL_E2[m]. A data signal is input from the source driver circuit unit 506 via the signal line SL_E2[n]. do.

[0043] As described above, the pixel 10(m,n) has the first to third display elements. The scanning line GL_L[m], the scanning line GL_L[m+1], and the scanning line GL_L[X] is a wiring for controlling the potential of the third display element, and the scanning line GL_E1[m], the scanning line GL _E1[m+1], scan line GL_E1[X], scan line GL_E2[m], scan line GL_E 2[m+1], and the scanning line GL_E2[X] are the voltages of the first and second display elements. This is the wiring that controls the position.

[0044] Moreover, the signal lines SL_L[n], SL_L[n+1], and SL_L[Y] are represented by the third table. The signal lines SL_E1[n], SL_E1[n+1], SL_E1[Y], signal lines SL_E2[n], SL_E2[n+1], and SL_E2[ Y] is a wiring that controls the potential of the first display element and the second display element.

[0045] [External circuit] An external circuit 508 is connected to the display device 500. 508 may be included.

[0046] As shown in FIG. 2, the external circuit 508 includes a wiring ANODE to which an anode potential is applied and a are electrically connected.

[0047] <1-2. Pixel circuit configuration> Next, the circuit configuration of pixel 10(m,n) will be described with reference to FIG.

[0048] FIG. 1A illustrates a pixel 10(m,n) of a display device 500 according to one embodiment of the present invention. FIG.

[0049] The pixel 10(m,n) is connected to the scanning line GL_L[m], the scanning line GL_E1[m], and the scanning line GL _E2[m], signal line SL_E1[n], signal line SL_L[n], and signal line SL_E2 The pixel 10(m,n) has transistors MA1 to M A5, transistors MB1 to MB4, a capacitance element Cs_L, and a capacitance element The display device includes capacitance elements Cs_E1 to Cs_E8, a display element 12, and a display element 14. In FIG. 1A, the display element 14 includes a display element 14B, a display element 14G, and a display element The display element 14B has a function of emitting blue light, and the display element 14R has a function of emitting blue light. The display element 14G has a function of emitting green light, and the display element 14R has a function of emitting red light. The display element 14W has a function of emitting white light.

[0050] In addition, the pixel 10(m,n) includes a wiring TCOM electrically connected to the display element 12 and a capacitor A wiring electrically connected to the capacitance element Cs_L and the capacitance elements Cs_E1 to Cs_E8 A line CSCOM, a wiring CATHODE electrically connected to the display element 14, and a transistor and a wiring ANODE electrically connected to the transistors MB1 to MB4.

[0051] In addition, the scanning line GL_L[m], the signal line SL_L[n], the wiring CSCOM, and the wiring TC OM denotes wiring for supplying signals and power to the display element 12, and the scanning lines GL_ E1[m], scanning line GL_E2[m], signal line SL_E1[n], signal line SL_E2[n ], the wiring ANODE, and the wiring CATHODE respectively transmit signals and power to the display element 14. This is the wiring for supplying power.

[0052] A top view of the layout of pixel 10(m,n) is shown in FIG. Transistors MA1 to MA5 and transistors MB1 to M Has B4.

[0053] <1-3. Configuration example of the first display element> The display element 14W, the display element 14R, and the display element 14G have a function of emitting light, i.e., light emission. Therefore, the display element 14W, the display element 14R, and the display element 14G have a function of emitting light. For example, the display element 14W, the display element 14R, and the display element 14G is a configuration using electroluminescence elements (also called EL elements), Alternatively, a configuration using a light emitting diode may be used.

[0054] <1-4. Configuration example of second display element> The display element 14B has a function of emitting light, that is, a function of emitting light. For example, the display element 14B may be an electroluminescent element. A structure using electroluminescence elements (also called EL elements) or a structure using light-emitting diodes It is sufficient to adopt a configuration such as the one described above.

[0055] <1-5. Example of the configuration of the third display element> The display element 12 has a function of controlling the reflection or transmission of light. It is preferable to use a so-called reflective display element that controls the reflection of light. By using a projection type display element, it is possible to display using external light, For example, the display element 12 may be a liquid crystal display element. and a polarizing plate, or a microelectromechanical system ( A configuration using a MEMS (Micro Electro Mechanical Systems) may be used.

[0056] In this manner, the display element 12, the display element 14B, the display element 14G, the display element 14R and the display The display element 14W may have different functions. For example, one or more of the display elements may be made to reflect light. By using a reflective liquid crystal element for the other elements and a transmissive EL element for the other elements, a highly convenient display device is created. In addition, in an environment with bright outside light, a reflective liquid crystal element can be used. In addition, in environments with low external light, the use of transmissive EL elements reduces power consumption. A display device with high display quality can be obtained.

[0057] <1-6. Display element driving method> Next, a method for driving the display element 12 and the display element 14 will be described with reference to FIG. In the following description, the first display element will be referred to as the display element 14G and the display element 1 The display element 4R and the display element 14W are configured to use light-emitting elements. As the third display element, a light-emitting element is used for the display element 12. The configuration uses children.

[0058] [Method of driving the first display element] As shown in FIG. 1A, in pixel 10(m,n), the gate of transistor MA1 The electrode is electrically connected to the scan line GL_E1[m]. One of the source electrode and the drain electrode is electrically connected to the signal line SL_E1[n], and the other indicates the gate electrode of the transistor MB1, the capacitance elements Cs_E1 and Cs_E2 The transistor MA1 is electrically connected to one of the electrodes of the transistor MA2. By switching the data signal, the writing of data can be controlled.

[0059] One of the source electrode and the drain electrode of the transistor MB1 is connected to a pair of the display element 14W. The source electrode and drain electrode of the transistor MB1 are electrically connected to one of the electrodes. The other of the pair of electrodes of the display element 14W is electrically connected to the wiring ANODE. is electrically connected to the wiring CATHODE. The transistor MB1 is The transistor functions as a so-called drive transistor, which controls the current supplied to the transistor.

[0060] The transistor MB1 has a first gate electrode and a second gate electrode above and below the semiconductor film. In this specification, the first gate electrode is a dual-gate transistor. The first gate electrode is called the front gate electrode, and the second gate electrode is called the back gate electrode. The back gate electrode is either the source electrode or the drain electrode of the transistor MB1. By electrically connecting the transistor to the back channel side, the potential of the back channel side of the transistor is fixed. By using such a structure, the threshold voltage of the transistor can be controlled. Therefore, the off-state current of the transistor can be reduced.

[0061] Between the front gate electrode of the transistor MB1 and the wiring ANODE, a capacitance element C s_E1 is formed. Also, the front gate electrode of the transistor MB1 and the wiring CSC A capacitance element Cs_E2 is formed between the pixel 10(m,n ) has the function of retaining the data written to it.

[0062] As shown in FIG. 1A, in the pixel 10(m,n), The gate electrode is electrically connected to the scanning line GL_E1[m]. One of the source electrode and the drain electrode of SL_E2[n] is electrically connected to the signal line SL_E2[n]. , the other is the gate electrode of the transistor MB2, the capacitance element Cs_E3 and the capacitance element Cs The transistor MA2 is electrically connected to one of the electrodes of the transistor E4. By switching between these, it has a function of controlling the writing of data of the data signal.

[0063] One of the source electrode and the drain electrode of the transistor MB2 is connected to a pair of the display element 14R. The source electrode and drain electrode of the transistor MB2 are electrically connected to one of the electrodes. The other of the pair of electrodes of the display element 14R is electrically connected to the wiring ANODE. is electrically connected to the wiring CATHODE. The transistor MB2 is The transistor functions as a so-called drive transistor, which controls the current supplied to the transistor.

[0064] The transistor MB2 has a front gate electrode and a back gate electrode above and below the semiconductor film. The back gate electrode of the transistor MB2 is a dual-gate transistor having a is electrically connected to either the source electrode or the drain electrode of transistor MB2. By this, the potential on the back channel side of the transistor can be fixed.

[0065] Between the front gate electrode of the transistor MB2 and the wiring ANODE, a capacitance element Cs The front gate electrode of the transistor MB2 and the wiring CSCO A capacitance element Cs_E4 is formed between the pixel 10(m,n) and the pixel 10(m,n). The EEPROM has the function of retaining the data written in the EEPROM.

[0066] As shown in FIG. 1A, in the pixel 10(m,n), The gate electrode is electrically connected to the scanning line GL_E2[m]. One of the source electrode and the drain electrode of the transistor 3 is electrically connected to the signal line SL_E1[n]. , the other is the gate electrode of the transistor MB3, the capacitance element Cs_E5 and the capacitance element Cs The transistor MA3 is electrically connected to one of the electrodes of the transistor E6. By switching between these, it has a function of controlling the writing of data of the data signal.

[0067] One of the source electrode and the drain electrode of the transistor MB3 is connected to a pair of the display element 14G. The source electrode and drain electrode of the transistor MB3 are electrically connected to one of the electrodes. The other of the pair of electrodes of the display element 14G is electrically connected to the wiring ANODE. is electrically connected to the wiring CATHODE. The transistor MB3 is The transistor functions as a so-called drive transistor, which controls the current supplied to the transistor.

[0068] The transistor MB3 has a front gate electrode and a back gate electrode above and below the semiconductor film. The back gate electrode of transistor MB3 is a dual-gate transistor having a is electrically connected to either the source electrode or the drain electrode of transistor MB3. By this, the potential on the back channel side of the transistor can be fixed.

[0069] Between the front gate electrode of the transistor MB3 and the wiring ANODE, a capacitance element Cs The front gate electrode of the transistor MB3 and the wiring CSCO A capacitance element Cs_E6 is formed between the pixel 10(m,n) and the pixel 10(m,n). The EEPROM has the function of retaining the data written in the EEPROM.

[0070] [Method of driving the second display element] As shown in FIG. 1A, in the pixel 10(m,n), The gate electrode is electrically connected to the scanning line GL_E2[m]. One of the source electrode and the drain electrode of the transistor 4 is electrically connected to the signal line SL_E2[n]. , the other is the gate electrode of the transistor MB4, the capacitance element Cs_E7 and the capacitance element Cs The transistor MA4 is electrically connected to one of the electrodes of the transistor E8. By switching between these, it has a function of controlling the writing of data of the data signal.

[0071] One of the source electrode and the drain electrode of the transistor MB4 is connected to a pair of the display element 14B. The source electrode and drain electrode of the transistor MB4 are electrically connected to one of the electrodes. The other of the pair of electrodes of the display element 14B is electrically connected to the wiring ANODE. is electrically connected to the wiring CATHODE. The transistor MB4 is The transistor functions as a so-called drive transistor, which controls the current supplied to the transistor.

[0072] The transistor MB4 has a front gate electrode and a back gate electrode above and below the semiconductor film. The back gate electrode of transistor MB4 is a dual gate transistor having a is electrically connected to the front gate electrode of the transistor MB4. The current driving capability can be improved.

[0073] Between the front gate electrode of the transistor MB4 and the wiring ANODE, a capacitance element Cs _E7 is formed. Also, the front gate electrode of the transistor MB4 and the wiring CSCO A capacitance element Cs_E8 is formed between the pixel 10(m, n) and the pixel 10(m, n). The EEPROM has the function of retaining the data written in the EEPROM.

[0074] For example, the gate driver circuit unit 504b shown in FIG. 2 drives the pixels 10(m,1) in each row. 10(m,Y) are selected in sequence, and the transistors MA1 to MA4 are turned on. The data of the data signal is written. The pixels 10(m,1) to 10(m,2) to which the data is written are (m, Y) is put into a holding state by the transistors MA1 to MA4 being turned off. Furthermore, the sources of the transistors MB1 to MB4 are turned on in response to the potential of the written data signal. The amount of current flowing between the electrode and the drain electrode is controlled, and the display element 14 changes color in response to the amount of current flowing. By repeating this process row by row, an image can be displayed.

[0075] As described above, the first display element, the display element 14W having the function of emitting white light, A transistor MB1 that drives the first display element has the function of emitting red light. A transistor MB2 that drives the display element 14R, and a transistor MB3 that drives the first display element, The front gate electrode of the transistor MB3 that drives the display element 14G having the function of emitting light. Each of them is electrically connected to either the source electrode or the drain electrode. On the other hand, the second display element, ie, the display element 14B having a function of emitting blue light, is driven. The front gate electrode of the transistor MB4 is electrically connected to the back gate electrode. With this configuration, compared to the transistors MB1 to MB3, The transistor MB4 can improve the current driving capability. A second display element 14 that emits blue light is provided in addition to the first display elements 14W, 14R, and 14G. Since the current flowing through B can be increased, the brightness of the blue light emitted from the display element 14B is high. Therefore, the brightness of the display device can be increased.

[0076] In addition, even if the current density flowing through the driving transistor is the same, the luminance of the light emitted varies depending on the EL material. A poor balance of red, green and blue light luminance can cause the white balance of a display device to be distorted. The white balance may become worse. If a blue EL material with low luminance is used for the display element 14B, In this case, by using the transistor MB4 with high current driving capability, The brightness of the blue light emitted from the OLED is increased. Thus, the brightness of the red, green and blue lights is balanced. This improves the contrast and improves the white balance of the display device.

[0077] In addition, the back gate electrode of the transistor for driving the first display element is connected to the source electrode. In comparison with a transistor in which the source electrode is electrically connected to either the drain or source electrode, The back gate electrode is electrically connected to the front gate electrode. The transistor connected to the wiring requires a large area, which reduces the aperture ratio of the pixel. In some cases, the back gate electrode is placed on the front gate only in the transistor where the luminance of the light-emitting element is to be increased. By configuring the second display element to be electrically connected to the gate electrode, the aperture ratio of the pixel is reduced. It is possible to manufacture a display device with high definition while suppressing the generation of noise.

[0078] As described above, the display device according to one embodiment of the present invention has high luminance and excellent white balance. Moreover, a display device with high resolution can be provided.

[0079] In addition, an example of a configuration in which blue is used as the second display element and the luminance of blue light is increased has been shown. However, one embodiment of the present invention is not limited to this. In addition, two or more colors may be configured in the second display element.

[0080] [Third display element driving method] In the pixel 10(m,n), the gate electrode of the transistor MA5 is connected to the scanning line GL_L[ m]. Also, the source electrode or drain electrode of the transistor MA5 One of them is electrically connected to the signal line SL_L[n], and the other is a pair of electrodes of the display element 12. Transistor MA5 is electrically connected to one of the terminals. This provides a function of controlling the writing of data of a data signal.

[0081] The other of the pair of electrodes of the display element 12 is electrically connected to the wiring TCOM.

[0082] One of the pair of electrodes of the capacitance element Cs_L is connected to the source electrode of the transistor MA5 or is electrically connected to the other of the drain electrodes and one of the pair of electrodes of the display element 12, The other of the pair of electrodes of the element Cs_L is electrically connected to the wiring CSCOM. s_L has a function of holding data written to pixel 10(m,n). COM indicates that noise generated in the display element 12 is 4. The method of claim 1, wherein the first gate electrode is a front gate electrode or a back gate electrode. It has a suppressing effect.

[0083] For example, the gate driver circuit unit 504a shown in FIG. 2 drives the pixels 10(m,1) in each row. 10(m,Y) are sequentially selected, and the transistor MA5 is turned on, The data of the data signal is written to the pixels 10(m,1) to 10(m,2). m, Y) are held when the transistor MA5 is turned off. By performing this sequentially, an image can be displayed.

[0084] In addition, a configuration without the third display element and only the first display element and the second display element can be used. good.

[0085] In addition, the transistors MA1 to MA5 and the transistor It is preferable that the transistors MB1 to MB4 have a metal oxide in the semiconductor film. The transistors that use this method have a relatively high field effect mobility, making it possible to operate at high speeds. In addition, the off-state current of a transistor having a metal oxide is extremely small. Even if the refresh rate of the display device is lowered, the brightness of the display device can be maintained, and power consumption is reduced. can be suppressed.

[0086] The display method of the display element 12 and the display element 14 may be a progressive method or an inverse method. In addition, color display can be controlled by pixels. The elements are not limited to the above configuration. For example, in addition to the above configuration, yellow, cyan, One or more colors such as magenta may be added. Also, the size of the display area for each dot of the color element is However, the display device according to one embodiment of the present invention is a color display device. The present invention is not limited to this, and can also be applied to a monochrome display device.

[0087] The display device 500 includes at least one of the display element 12 and the display element 14. For example, the display element 12 is a so-called reflective liquid crystal element. Therefore, visibility can be improved even in an environment with strong external light. When using the pixel 12 to display gradations, the backlight, etc., can be controlled more easily than in a transmissive liquid crystal display device. Since there is no need to control the power consumption, it is possible to reduce the power consumption.

[0088] On the other hand, the display element 14 is a so-called light-emitting element, and therefore has poor visibility in an environment where the intensity of external light is weak. In addition, when the display element 14 is used for gray scale display, the display element 14 is a transmissive type. Unlike liquid crystal display devices, it does not use a backlight, etc., and light emission can be controlled at the pixel level. It is possible to improve the image quality of trust, etc.

[0089] The display device 500 may perform gradation display using the display element 12 and the display element 14. By performing gradation display using the display element 12 and the display element 14, Compared to a case where gradation display is performed using only one of the display elements 14, visibility is improved. This can be done.

[0090] <1-7. Display area of ​​display element> Next, regarding the display area of ​​pixel 10(m,n) of display element 12 and display element 14, This will be explained using Figure 3.

[0091] FIG. 3 is a schematic diagram illustrating the display area of ​​the pixel 10(m,n).

[0092] The display area of ​​the pixel 10(m,n) shown in FIG. 3 functions as the display area of ​​the display element 12. a display area 12d that functions as a display area of ​​the display element 14B; and a display area 14Bd that functions as a display area of ​​the display element 14B. A display area 14Gd that functions as the display area of ​​the display element 14G, and a display area 14R and a display area 14Rd that functions as the display area of ​​the display element 14W. It has 14Wd.

[0093] The display area 12d has an area that reflects light, and the display area 14Bd has an area that transmits blue light. The display region 14Gd has an area that transmits green light, and the display region 14Rd has an area that transmits red light. The display region 14Wd has an area that transmits light of a different wavelength, and the display region 14Wd has an area that transmits white light.

[0094] For example, by using the pixel 10(m,n) shown in FIG. 3 as the display area, the display area 12d can be used. A black and white image is displayed in the display area 14Bd, the display area 14Gd, and the display area 14Rd. , and the display area 14Wd can be used to display a full-color image.

[0095] <1-8. Example of display device configuration> Next, an example of the structure of the pixel 10 of the display device 500 will be described with reference to FIGS. 4 and 5. explain.

[0096] 4 shows an example of a top view of the pixel 10, and FIG. 5 shows a top view of the pixel 10 shown in FIG. A1-A2, A3-A4, A5-A6, A7-A8, A9-A10 and A11-A12 It should be noted that in the top view of the pixel 10 shown in FIG. In order to avoid confusion, some of the components are omitted in FIG. The display area of ​​the pixel (area corresponding to display areas 14Rd, 14Gd, 14Bd, and 14Wd) It should be noted that the same applies to the subsequent top views of the pixel 10.

[0097] The pixel 10 shown in FIG. 4 and FIG. 5 includes a substrate 80, a display element 12 between the substrate 90, and a display The display element 14a includes a display element 14b, and transistors Tr1 to Tr5. do.

[0098] The display element 14a is the same as the display element 14W, the display element 14R, and the display element 14 G. Also, the display element 14b corresponds to the display element 14B shown above. The transistor Tr1 corresponds to the transistor MA5 shown above. The transistor Tr2 is any one of the transistors MA1 to MA3 shown above. The transistor Tr3 corresponds to one of the transistors MB1 to MB2. The transistor Tr4 corresponds to one of the transistors MB3 and MB4. Transistor Tr5 corresponds to transistor MB4 shown above. Correct.

[0099] The display element 12 has a liquid crystal layer 96, and the display elements 14a and 14b are Each of the display elements 12 has an EL layer 76. The transistor Tr1 has a function of selecting the display element 12. The transistor Tr2 has a function of selecting the display element 14a, and The transistor Tr3 has a function of controlling the driving of the display element 14a. The transistor Tr5 has a function of selecting the display element 14b, and controls the driving of the display element 14b. The transistors Tr1, Tr2, and Tr4 have the function of , the transistor Tr3 and the transistor Tr5 are formed on the same surface. The transistor Tr1 is formed above the transistor Tr2 and the transistor Tr4. The transistor Tr3 is connected to either the source electrode or the drain electrode of the transistor Tr2. The transistor Tr5 has one of the gate electrodes as the gate electrode of the transistor Tr4. Either the source electrode or the drain electrode serves as a gate electrode.

[0100] The display element 12 has a conductive film 36 that functions as a first pixel electrode. The transistor Tr1 is electrically connected to the conductive film 36 and has a function of selecting the display element 12. The transistor Tr3 is electrically connected to the conductive film 70a and is connected to the display element 14a. The transistor Tr5 is electrically connected to the conductive film 70b and has a function of selecting The display element 14b has a function of selecting the display element 14b.

[0101] The pixel 10 also includes a capacitive element 16 and a capacitive element 18. The element 18 has a pair of electrodes, one of which is a conductive film 42 that functions as a capacitance electrode. The other of the pair of electrodes includes a conductive film 36. The conductive film 42 is The conductive film 42 is disposed below the transistors Tr3 and Tr5. , may be disposed below a transistor other than Tr5.

[0102] The capacitive element 16 corresponds to the capacitive elements Cs_E1 to Cs_E8 described above. The capacitance element 18 corresponds to the capacitance element Cs_L described above. E8 and the capacitive element 18 can be manufactured using the same material and in the same process.

[0103] The conductive film 42 functioning as a capacitance electrode is By disposing the display element 12 below one or more of the display elements 12, noise caused by rewriting the display element 12, in other words, This makes it possible to reduce noise caused by rewriting pixels of the liquid crystal element.

[0104] As shown in FIG. 5, a transistor Tr1, a transistor Tr2, and a transistor The transistors Tr3 and Tr4 are formed on the same surface. The transistor Tr1 is formed above the transistor Tr2 and the transistor Tr4. By doing so, the circuit area can be reduced. Either the source electrode or the drain electrode of the transistor Tr2 is used as the gate electrode. The transistor Tr5 has a structure in which the source electrode of the transistor Tr4 is connected to the source electrode of the transistor Tr5. Since the gate electrode is either the drain electrode or the gate electrode, the manufacturing process is simplified. It can be shortened.

[0105] As shown in FIG. 5, the transistors Tr1 to Tr5 are inverted. A transistor having a staggered structure (also called a bottom gate structure) is preferable. By using a gate structure transistor, the transistor can be manufactured through a relatively simple process. However, one embodiment of the present invention is not limited to this, and a transistor having a top gate structure can be used. A transistor may also be used.

[0106] The display element 12 also has a function of reflecting incident light. This is a so-called liquid crystal element, and has a liquid crystal layer 96 between a pair of electrodes. One of the pair of electrodes is a conductive The other of the pair of electrodes has a conductive film 92. The element 12 may have an alignment film 94 and an alignment film 98 in contact with the liquid crystal layer 96. The conductive film 36 functions as a reflective electrode. By reflecting the light by the conductive film 36, the light can be reflected to the viewing side.

[0107] The display element 14a and the display element 14b have a function of emitting light. The display element 14a and the display element 14b are so-called light-emitting elements, and each has an EL layer 76 between a pair of electrodes. One of the pair of electrodes has a conductive film 70a and a conductive film 70b, and the other of the pair of electrodes The second electrode has a conductive film 78. The conductive film 78 also functions as a reflective electrode. As indicated by the dashed arrow, the light emitted by the EL layer 76 is reflected by the conductive film 78 and 0a and the conductive film 70b, and is taken out to the liquid crystal layer 96 side. The emitted light passes through an opening provided in the conductive film 36 and is extracted to the substrate 90 side. In FIG. 5, the opening is clearly shown as a display area 14d.

[0108] The display element 14 is made of a fine metal mask (FMM) d), G (Green), B (Blue), etc., EL layers 76 are formed. However, the display element 14 is not limited to this, and may be any light-emitting element having a W (Wh The light from the element is transmitted through a colored film to produce R, G, and A configuration in which each of the light sources emits light of different wavelengths, such as blue, green, blue, etc., may also be used.

[0109] An example of the above configuration is shown in Fig. 6. Fig. 6 is a cross-sectional view of a modified example of the pixel 10 shown in Fig. 5. As shown in FIG. 6, light from the display element 14a and the display element 14b passes through a colored film 69. As shown in FIG. 6, the colored film 69 is It is preferable to cover a part of the transistor Tr5. By covering the channel formation region of the transistor Tr5, By reducing the amount of light entering the channel formation region, This makes it possible to improve the light resistance of the transistors Tr3 and Tr5. The colored film 69 covers the transistors other than the transistor Tr3 and the transistor Tr5. It is also possible to use the following.

[0110] <1-9. Manufacturing method of display device> Next, a method for manufacturing the pixel 10 of the display device 500 shown in FIG. 4 will be used for the explanation.

[0111] First, a conductive film 31, an insulating film 32, and an insulating film 34 are formed in this order on a substrate 30. A conductive film is formed on the insulating film 34, and the conductive film is processed into an island shape to form the conductive film 36. (See FIG. 7(A) and FIG. 13.)

[0112] The conductive film 31 functions as a first release layer, and the insulating film 32 and the insulating film 34 function as a second release layer. The conductive film 36 functions as a reflective film. 36 may be referred to as the first pixel electrode. The first pixel electrode is made of silver and aluminum. It is preferable that the first pixel electrode is made of silver and aluminum. By using a structure including minium, it is possible to increase the reflectance. A specific example of an electrode containing silver is an alloy containing silver, palladium, and copper. can be done.

[0113] Next, a conductive film is formed on the insulating film 34 and the conductive film 36, and the conductive film is processed into an island shape. Thus, the conductive film 38 is formed. Then, the insulating film 40 is formed on the conductive film 36 and the conductive film 38. (See FIG. 7(B) and FIG. 14.)

[0114] The conductive film 36 functions as one of a pair of electrodes of the display element 12. The conductive film 36 has the following functions: It has the function of controlling the orientation.

[0115] The conductive film 38 is electrically connected to the conductive film 36. The conductive film 38 is made of a light-transmitting conductive material. It is formed using materials.

[0116] Next, a conductive film is formed on the insulating film 40, and the conductive film is processed into an island shape to form a conductive film 42. Then, an insulating film 44 is formed on the conductive film 42. Then, the insulating film 40 and the insulating film 44 are A first opening 45 is formed in a desired region of the insulating film 44. The first opening 45 is formed by a conductive material. The film 38 is formed so as to be partially exposed (see FIG. 8(A) and FIG. 15).

[0117] Next, a conductive film is formed on the insulating film 44 and processed into an island shape to form a conductive film 46. a, conductive film 46b, conductive film 46c, conductive film 46d, conductive film 46e, and conductive film 46f. Thereafter, the insulating film 44, the conductive film 46a, the conductive film 46b, the conductive film 46c, and the conductive film 46 d, an insulating film 48 is formed on the conductive film 46e and the conductive film 46f. Then, The oxide semiconductor film is formed on the oxide semiconductor substrate 10 and processed into an island shape. The insulating film 50a, the oxide semiconductor film 50b, and the oxide semiconductor film 50c are then formed. A second opening 51 is formed in a desired area of ​​the film 48. Note that the second opening 51 is formed in the first The opening 45 is provided so as to overlap with the conductive film 46f, and is formed so as to expose a part of the conductive film 46f ( See Figures 8(B) and 16).

[0118] The conductive film 42 also functions as the other of the pair of electrodes of the capacitor 16 . That is, the capacitance element 16 includes a conductive film 36, a conductive film 38, an insulating film 40, and a conductive film 42. The conductive film 36 and the conductive film 38 function as one of a pair of electrodes of the capacitor 16. The film 42 functions as the other of the pair of electrodes of the capacitance element 16, and the insulating film 40 functions as the dielectric of the capacitance element 16. It functions as a dielectric film.

[0119] The conductive film 46a also functions as the gate electrode of the transistor Tr1. The conductive film 46b functions as the gate electrode of the transistor Tr2. The film 46d functions as the gate electrode of the transistor Tr4.

[0120] Next, the insulating film 48, the oxide semiconductor film 50a, the oxide semiconductor film 50b, and the second opening A conductive film is formed on the insulating film 51, and the conductive film is processed into an island shape to form a conductive film 52a and a conductive film 52 b, the conductive film 52c, the conductive film 52d, the conductive film 52e, the conductive film 52f, the conductive film 52g, and the conductive film 52c. Then, a conductive film 52h is formed (see FIG. 9(A) and FIG. 17).

[0121] The conductive film 52a and the conductive film 52b form the source electrode and the drain electrode of the transistor Tr1. The conductive film 52c and the conductive film 52d function as a source The conductive film 52f and the conductive film 52g function as a transistor electrode and a drain electrode. These electrodes function as the source and drain electrodes of transistor Tr4.

[0122] The conductive film 52e also functions as the gate electrode of the transistor Tr3. 52h functions as the gate electrode of the transistor Tr5.

[0123] Next, the insulating film 48, the oxide semiconductor films 50a and 50b, and the conductive films 52a, 52b, and 52c are An insulating film 54 is then formed on the insulating film 54. The oxide semiconductor film is processed to form an island-shaped oxide semiconductor film 56a and an oxide A semiconductor film 56b is formed. Then, a third opening 55 is formed in a desired region of the insulating film 54. The third opening 55 is formed so as to expose a part of the conductive film 52. Thereafter, the island-shaped oxide semiconductor film 56a and the oxide semiconductor film 5 A conductive film is formed on the conductive film 56b and processed into an island shape to form a conductive film 58a and a conductive film 56b. 8b, a conductive film 58c, and a conductive film 58d are formed (see FIG. 9B and FIG. 18).

[0124] The conductive film 58a and the conductive film 58b form the source electrode and the drain electrode of the transistor Tr3. The conductive film 58c and the conductive film 58d function as a source It functions as an electrode and a drain electrode.

[0125] Next, an insulating film 62 is formed on the insulating film 54 and the conductive films 58a and 58b. A fourth opening 63a reaching the conductive film 58a and a fourth opening 63b reaching the conductive film 58c are formed in a desired region of the insulating film 62. Then, a fifth opening 63b reaching the conductive film 58d and a sixth opening 63c reaching the conductive film 58d are formed. The sixth opening 63c is provided so as to overlap with the third opening 55. The conductive film 58a, the conductive film 3a, the conductive film 58b, and the conductive film 63c are formed in the fifth opening 63a, the fifth opening 63b, and the sixth opening 63c, respectively. 58c and a part of the conductive film 58d are exposed. A conductive film is formed on the insulating film 62 so as to cover the fifth opening 63b and the sixth opening 63c. The conductive film is then processed into islands to form the conductive film 64a and the conductive film 64b. (See Figures 10(A) and 19).

[0126] The conductive film 64a functions as a back gate electrode of the transistor Tr3. The conductive film 64a is electrically connected to the conductive film 58a. The conductive film 64b is The conductive film 64b functions as a back gate electrode of the semiconductor device 5. With this configuration, the back gate electrode of the transistor Tr3 is connected to the Electrically connected to either the source electrode or the drain electrode of transistor Tr3 This makes it possible to fix the potential on the back channel side of the transistor. The back gate electrode of transistor Tr5 is electrically connected to the front gate electrode of transistor Tr5. This makes it possible to improve the current driving capability of the transistor.

[0127] Next, the insulating film 62 and the insulating film 68 having openings on the conductive film 64a and the conductive film 64b are formed. Thereafter, a conductive film is formed on the insulating film 68, and the conductive film is processed into an island shape. Then, the conductive film 70a and the conductive film 70b are formed. An insulating film 72 having an opening is formed on the conductive film 70b (see FIG. 10(B) and FIG. 20). .

[0128] The insulating film 68 functions as a planarizing insulating film. The conductive film 7 functions as one of the pair of electrodes and as the second pixel electrode. 0b serves as one of a pair of electrodes of the display element 14b and as a second pixel electrode. The conductive film 70a is electrically connected to the conductive film 58a and the conductive film 64a. The conductive film 70b is electrically connected to the conductive film 58d and the conductive film 64b. The conductive film 70a and the conductive film 70b having the function of the pixel electrode 2 are made of indium, zinc It is preferable that the material contains one or more selected from the group consisting of tin, tin, and silicon. For example, the conductive film 70a and the conductive film 70b may be made of a material containing indium, tin, and silicon. In FIG. 10B, the conductive film 70a and the conductive film In order to clearly show the configuration under the conductive film 70b, the hatching of the conductive film 70a and the conductive film 70b is transparent. The above is illustrated.

[0129] Next, an EL layer 76 and a conductive film 78 are formed on the insulating film 72 (FIG. 11(A) and FIG. 21 In FIG. 11A, the structure below the conductive film 70a and the conductive film 70b is clearly shown. In order to show this, the conductive film 70a, the conductive film 70b, the EL layer 76, and the conductive film 78 are hatched. The illustration is transparent.

[0130] An island-shaped structure may be provided between the insulating film 72 and the EL layer 76. The EL layer 76 has a function of controlling the distance between the display element 14 and the substrate 80. The conductive film 78 also functions as the other of the pair of electrodes of the display element 14. has.

[0131] Next, a sealing material 82 is applied onto the conductive film 78, and a substrate on which transistors, display elements, etc. are formed is formed. The plate 30 and the substrate 80 are bonded together (see FIG. 11(B) and FIG. 22). In order to clearly show the configuration below the conductive film 70a and the conductive film 70b, the conductive film 7 0a, the conductive film 70b, the EL layer 76, the conductive film 78, and the sealing material 82 are shown through hatching. It shows.

[0132] Next, the substrate 30 and the substrate 80 are separated. The plate 80 is separated from the conductive film 31 near the interface between the conductive film 31 and the insulating film 32 (FIG. 12(A) and FIG. 2 3). In FIG. 12(A), the structure below the conductive film 70a and the conductive film 70b is For clarity, the conductive film 70a, the conductive film 70b, the EL layer 76, the conductive film 78, and the encapsulant 82 are The hatching is shown transparently.

[0133] When the element is separated from the interface of the conductive film 31, the interface between the conductive film 31 and the insulating film 32 is polarized. It is preferable to add a solvent (typically water) or a non-polar solvent. When separating elements from the interface, the use of water can reduce damage caused by electrostatic charge during separation. Therefore, it is preferable.

[0134] For example, the following materials can be used for the conductive film 31. , tungsten, molybdenum, titanium, tantalum, zinc, ruthenium, rhodium, palladium An element selected from the group consisting of sulphur, osmium, iridium, gallium, and silicon, or an element containing said element The alloy material or the compound material containing the element is used in a single layer or a laminated structure. In the case of a layer containing silicon, the crystal structure of the layer containing silicon can be as follows: The material may be amorphous, microcrystalline, polycrystalline, or single crystalline.

[0135] The conductive film 31 has a laminated structure of a layer containing tungsten and a layer containing an oxide of tungsten. In the case of forming a tungsten-containing layer, an insulating layer made of oxide is formed on the tungsten-containing layer. By forming a layer containing tungsten oxide at the interface between the tungsten layer and the insulating layer, In addition, the surface of the layer containing tungsten may be subjected to a thermal oxidation treatment. , oxygen plasma treatment, nitrous oxide (N2O) plasma treatment, or ozone water, etc. Alternatively, a layer containing tungsten oxide may be formed by treating the surface with a strong solution of tungsten. Plasma and heat treatments are carried out using oxygen, nitrogen, nitrous oxide, or these gases in combination with other gases. The plasma treatment or heat treatment may be performed in a mixed gas atmosphere with a gas. By changing the surface condition of 31, the adhesion between the conductive film 31 and the insulating film 32 to be formed later can be improved. It is possible to control the

[0136] In the present embodiment, the configuration in which the conductive film 31 is provided is illustrated. For example, the conductive film 31 may not be provided. In this case, the conductive film 31 The organic resin film may be formed at the position where the organic resin film is to be formed. Polyimide resin film, polyamide resin film, acrylic resin film, epoxy resin film, Examples of the resin film include a phenol-based resin film. When a polyimide-based resin film is used, It is preferable to use photosensitive and thermosetting organic resin materials. By using the material, it becomes possible to give a shape or the like to the organic resin material.

[0137] In addition, when the organic resin film is used instead of the conductive film 31, the element formed on the substrate 30 The method for separating the elements is to apply laser light (for example, an electron microscope with a wavelength of 308 nm) from the lower side of the substrate 30. Lasers with a wavelength of 355 nm, which is the third harmonic of a YAG laser, are used. The organic resin film is weakened by the irradiation, and the interface between the substrate 30 and the organic resin film, the organic resin film or at the interface between the organic resin film and the insulating film 32.

[0138] In the case of irradiating the laser light, the irradiation energy density of the laser light is adjusted to Between the insulating film 30 and the insulating film 32, a region with high adhesion and a region with low adhesion are separately created. The laser beam may be a linear laser beam.

[0139] Next, the insulating film 32 and the insulating film 34 formed under the substrate 80 are removed, and the conductive film 36 and Then, the back surface of the conductive film 38 is exposed (see FIG. 12(B) and FIG. 24). In order to clearly show the configuration below the conductive film 70a and the conductive film 70b, 1, the conductive film 70b, the EL layer 76, the conductive film 78, and the sealing material 82 are shown in a transparent manner. is.

[0140] The insulating film 32 and the insulating film 34 can be removed by dry etching or wet etching. Either or both of the mixing techniques can be used.

[0141] Next, an alignment film 98 is formed in contact with the conductive film 36 and the conductive film 38. A substrate 90 on which an alignment film 94 is formed is prepared, and the side of the substrate 80 on which an alignment film 98 is formed is A liquid crystal layer 96 is filled between the substrate 90 and the side on which the alignment film 94 is formed, thereby forming the liquid crystal layer 96 shown in FIG. A display device 500 having the pixel 10 shown in FIG. 5 can be fabricated.

[0142] <1-10. Components of display device> Next, the display device 500 illustrated in FIGS. 1 to 24 and a method for manufacturing the display device 500 will be described. Each of the components will be described below.

[0143] [substrate] The substrates 30, 80, and 90 are made of a material having sufficient heat resistance to withstand the heat treatment during the manufacturing process. Fees may be used.

[0144] Specifically, non-alkali glass, soda-lime glass, alkali glass, crystal glass For example, the insulating film may be made of glass, quartz, sapphire, etc. Also, an inorganic insulating film may be used. The inorganic insulating film may be, for example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film. Examples of the film include an aluminum oxide film.

[0145] The alkali-free glass may have a thickness of, for example, 0.2 mm or more and 0.7 mm or less. Alternatively, the non-alkali glass may be polished to the above thickness.

[0146] In addition, we also offer 6th generation (1500mm x 1850mm) and 7th generation non-alkali glass. (1870mm x 2200mm), 8th generation (2200mm x 2400mm), 9th generation (2400mm x 2800mm), 10th generation (2950mm x 3400mm) etc. This allows the use of a large glass substrate, making it possible to manufacture a large display device. can be done.

[0147] The substrates 30, 80, and 90 are single crystal semiconductor substrates made of silicon or silicon carbide. Substrates, polycrystalline semiconductor substrates, compound semiconductor substrates such as silicon germanium, SOI substrates, etc. It's fine.

[0148] In addition, the substrates 30, 80, and 90 may be made of inorganic materials such as metals. Materials include stainless steel or aluminum.

[0149] The substrates 30, 80, and 90 may be made of organic materials such as resin, resin film, or plastic. The resin film may be made of polyester, polyolefin, or poly. Amides (nylon, aramid, etc.), polyimides, polycarbonates, polyurethanes, acrylics resin, epoxy resin, polyethylene terephthalate (PET), polyethylene naphtha Polyethersulfone (PEN), polyethersulfone (PES), or siloxane bond Resins and the like can be mentioned.

[0150] In addition, the substrates 30, 80, and 90 are made of composite materials that combine inorganic and organic materials. The composite material may be a metal plate or a thin glass plate and a resin film. and laminated materials, fibrous metal, particulate metal, fibrous glass, or particulate Materials in which glass is dispersed in a resin film, or inorganic materials such as fibrous or particulate resin Examples of the material include a material in which the polymer is dispersed.

[0151] In addition, the substrates 30, 80, and 90 each include at least a film or layer formed thereon or therebelow. Any material that can support the substrate may be used, and may be any one or more of an insulating film, a semiconductor film, and a conductive film. It's fine.

[0152] [Conductive film] Conductive film 31, 36, 38, 42, 46a, 46b, 46c, 52a, 52b, 52c, 52d, 52e, 58a, 58b, 64a, 64b, 70a, 70b, 78, 92 is a metal film having electrical conductivity, a conductive film having a function of reflecting visible light, or a film that transmits visible light. A conductive film having this function may be used.

[0153] Conductive metal films include aluminum, gold, platinum, silver, copper, chromium, tantalum, Titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium or manganese Alternatively, a material containing the above-mentioned metal element can be used. An alloy containing such a metal may also be used.

[0154] Specifically, the metal film having the above-mentioned conductivity is a two-layer structure in which a copper film is laminated on a titanium film. Two-layer structure with copper film laminated on titanium nitride film, two-layer structure with copper film laminated on tantalum nitride film A three-layer structure is used, in which a copper film is laminated on a titanium film, and a titanium film is formed on top of that. In particular, the use of a conductive film containing copper can reduce the resistance. As the conductive film containing copper, an alloy film containing copper and manganese is preferable. The alloy film is suitable because it can be processed using a wet etching method. .

[0155] In addition, a conductive polymer is used as the metal film having the above-mentioned conductivity. This is also fine.

[0156] The conductive film having the above-mentioned function of reflecting visible light may be made of gold, silver, copper, or parallax. In particular, a conductive material containing a metal element selected from the group consisting of silver and tin can be used. The use of a film is preferable because it can increase the reflectance in visible light.

[0157] The conductive film having the above-mentioned function of transmitting visible light may be made of indium, tin, zinc, A material containing an element selected from gallium or silicon can be used. are In oxide, Zn oxide, In-Sn oxide (also called ITO), In-Sn-Si Examples include In-Zn oxide (also called ITSO), In-Ga-Zn oxide, and In-Zn oxide. do.

[0158] The conductive film having a function of transmitting visible light may be made of graphene or graphene. A film containing graphene may be used. As the film containing graphene, a film containing graphene oxide may be used. and reducing the film containing graphene oxide to form a film containing graphene. The reduction method can be, for example, the application of heat or the use of a reducing agent. can be done.

[0159] In addition, the conductive films 31, 36, 38, 42, 46a, 46b, 46c, 52a, 52b, 2c, 52d, 52e, 58a, 58b, 64a, 64b, 70a, 70b, 78, 92 can be formed by electroless plating. The material may be, for example, Cu, Ni, Al, Au, Sn, Co, Ag, or Pd. It is possible to use one or more of the above materials. In particular, Cu or Ag is used. This is preferable because it is possible to reduce the resistance of the conductive film.

[0160] In addition, when a conductive film is formed by electroless plating, the constituent elements of the conductive film tend to diffuse outward. In order to prevent the conductive film from diffusing, a diffusion prevention film may be formed under the conductive film. A seed film on which the conductive film can be grown may be formed between the film and the conductive film. The diffusion prevention film can be formed by using, for example, a sputtering method. The diffusion prevention film may be, for example, a tantalum nitride film or a titanium nitride film. The seed film can be formed by electroless plating. The seed film is made of a conductive film material that can be formed by electroless plating. Materials similar to those used for the stencil printing can be used.

[0161] In addition, the conductive film having the above-mentioned function of reflecting visible light and the conductive film having the above-mentioned function of transmitting visible light By combining with a conductive film, a conductive film having a function of reflecting and transmitting visible light can be obtained. For example, one of the pair of electrodes of the display element 14 may be a transparent electrode having a function of reflecting visible light. and the other is a conductive film having a function of reflecting and transmitting visible light. By adopting this configuration, a micro-optical symmetry device utilizing the optical resonance effect between a pair of electrodes can be obtained. Microcavity structure increases the light intensity at a specific wavelength. can be done.

[0162] In addition, the other of the pair of electrodes (for example, the conductive film 70a and the conductive film 70b) of the display element 14 The layer structure may be a laminated structure of an In-Sn-Si oxide and an alloy containing silver. The alloy containing the metal is preferably a thin film (e.g., 50 nm or less, more preferably 100 nm or less) for transmitting visible light. Preferably, the thickness is 30 nm or less.

[0163] [Insulating film] The insulating films 32, 34, 40, 44, 48, 54, 62, 68, and 72 are made of insulating non-ferrous metals. Insulating materials, insulating organic materials, or insulating materials containing insulating inorganic materials and insulating organic materials A composite material of the above can be used.

[0164] The insulating inorganic material may be a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like. Examples of the inorganic material include a silicon oxide film, a silicon nitride oxide film, and an aluminum oxide film. A plurality of layers may be laminated.

[0165] Examples of the insulating organic material include polyester, polyolefin, and polyolefin. Polyamide (nylon, aramid, etc.), polyimide, polycarbonate, polyurethane, aramid Examples of the resin include acrylic resin, epoxy resin, and resin with siloxane bonds. Furthermore, as the insulating organic material, a material having photosensitivity may be used.

[0166] [Oxide semiconductor film] The oxide semiconductor films 50a, 50b, 56a, and 56b are made of In-M-Zn oxide (M is Al The oxide semiconductor films 50a and 50b are made of an oxide of a chromium (Zn, Ga, Y, Sn, or the like). Alternatively, In-Ga oxide or In-Zn oxide may be used as the layers 56b, 56a, and 56b. , an oxide semiconductor film that can be used for the oxide semiconductor films 50a, 50b, 56a, and 56b This will be described in detail in the third embodiment.

[0167] [Liquid crystal layer] The liquid crystal layer 96 may be a thermotropic liquid crystal, a low molecular weight liquid crystal, a high molecular weight liquid crystal, or a polymer dispersed liquid crystal. Liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. Using liquid crystal materials that exhibit phases such as rectic, cubic, chiral nematic, and isotropic. Alternatively, a liquid crystal material exhibiting a blue phase may be used.

[0168] The liquid crystal layer 96 is driven by an In-Plane-Switching (IPS) method. g) mode, TN (Twisted Nematic) mode, FFS (Fringe Field Switching) mode, ASM (Axially Symmetri) mode c aligned Micro-cell mode, OCB (Optically C ompensated birefringence mode, FLC (Ferroel etric Liquid Crystal) mode, AFLC (AntiFerro The vertical liquid crystal mode is also included. Vertical Alignment (VA) mode, specifically, MVA (Multi-Domain Vertical Alignment) al Alignment) mode, PVA(Patterned Vertical) mode Alignment) mode, ECB (Electrically Controlled) mode d Birefringence mode, CPA (Continuous Pinwh eel Alignment) mode, ASV (Advanced Super-Vie A driving method such as mode w) may be used.

[0169] [EL layer] The EL layer 76 includes at least a light-emitting material. The light-emitting material is an organic compound. In the present specification, the term "luminescent material" refers to a compound containing the luminescent material. The layer containing the light is also called the light-emitting layer.

[0170] The above-mentioned organic compounds and inorganic compounds can be prepared by, for example, deposition methods (including vacuum deposition methods), The layer can be formed by using an ink-jet method, a coating method, a gravure printing method or the like.

[0171] Materials that can be used for the organic compound include fluorescent materials and phosphorescent materials. From the viewpoint of lifetime, fluorescent materials are better, and from the viewpoint of efficiency, phosphorescent materials are better. Alternatively, a structure including both a fluorescent material and a phosphorescent material may be used.

[0172] Quantum dots are semiconductor nanocrystals with a size of a few nm, and are as small as 1×10 3 1×1 from pcs 0 6 Quantum dots are composed of about 100 atoms. The energy shift of quantum dots depends on their size. Therefore, even quantum dots made of the same material will have different emission wavelengths depending on their size. The emission wavelength can be easily adjusted by changing the size of the quantum dots used. can be done.

[0173] In addition, quantum dots have a narrow emission spectrum peak width, so they can emit light with good color purity. Furthermore, the theoretical internal quantum efficiency of quantum dots is said to be nearly 100%. This is much higher than the 25% of organic compounds that emit fluorescent light, and the 15% of organic compounds that emit phosphorescent light. This means that quantum dots can be used as light-emitting materials. In addition, quantum dots, which are inorganic compounds, can be used to obtain a light-emitting device with high luminous efficiency. Since the organic compound has excellent inherent stability, it is possible to obtain a light-emitting device having a long service life. This can be done.

[0174] The materials that make up quantum dots are elements in group 14 of the periodic table, elements in group 15 of the periodic table, Group 16 elements, compounds consisting of multiple Group 14 elements, Groups 4 to 7 Compounds of elements in group 14 and group 16 of the periodic table, and compounds of elements in group 2 and group 16 of the periodic table Compounds with group 13 elements, compounds with group 13 elements and group 15 elements, compounds with group 13 elements Compounds of Group 14 elements and Group 15 elements of the Periodic Table Compounds, compounds of elements in Group 11 and Group 17 of the Periodic Table, iron oxides, titanium oxides , chalcogenide spinels, and various semiconductor clusters.

[0175] Specifically, cadmium selenide, cadmium sulfide, cadmium telluride, and sulfur selenide Lead, zinc oxide, zinc sulfide, zinc telluride, mercury sulfide, mercury selenide, mercury telluride, arsenide Indium, indium phosphide, gallium arsenide, gallium phosphide, indium nitride, nitride Gallium, indium antimonide, gallium antimonide, aluminum phosphide, arsenide Aluminum, Aluminum antimonide, Lead selenide, Lead telluride, Lead sulfide, Lead selenide Indium, indium telluride, indium sulfide, gallium selenide, arsenic sulfide, selenium arsenic nitride, arsenic telluride, antimony sulfide, antimony selenide, antimony telluride, Bismuth sulfide, bismuth selenide, bismuth telluride, silicon, silicon carbide, germanium Aluminum, tin, selenium, tellurium, boron, carbon, phosphorus, boron nitride, boron phosphide, boron arsenide , aluminum nitride, aluminum sulfide, barium sulfide, barium selenide, barium telluride Lithium, Calcium Sulfide, Calcium Selenide, Calcium Telluride, Beryllium Sulfide, Beryllium selenide, Beryllium telluride, Magnesium sulfide, Magnesium selenide, Germanium sulfide, Germanium selenide, Germanium telluride, Tin sulfide, Tin selenide , tin telluride, lead oxide, copper fluoride, copper chloride, copper bromide, copper iodide, copper oxide, copper selenide, acid Nickel oxide, cobalt oxide, cobalt sulfide, triiron tetroxide, iron sulfide, manganese oxide, molybdenum sulfide Lithium oxide, vanadium oxide, tungsten oxide, tantalum oxide, titanium oxide, zirconium oxide nium, silicon nitride, germanium nitride, aluminum oxide, barium titanate, selenium and compounds of zinc and cadmium, compounds of indium, arsenic and phosphorus, compounds of cadmium and selenium Compounds of sulfur, compounds of cadmium, selenium and tellurium, compounds of indium, gallium and arsenic Compounds of indium, gallium and selenium, compounds of indium, selenium and sulfur, copper Examples of compounds include compounds of indium and sulfur, and combinations thereof. In addition, the composition is expressed in any ratio, so-called alloy type quantum dots. For example, cadmium, selenium, and sulfur alloy quantum dots are By changing the content ratio, the emission wavelength can be changed, which is effective for obtaining blue emission. This is one of the effective measures.

[0176] Quantum dot structures include core type, core-shell type, and core-multishell type. Either of these can be used, but it is also advisable to cover the core with another inorganic material with a wider band gap. By forming a shell of material, defects and dangling bonds on the nanocrystal surface can be eliminated. This greatly improves the quantum efficiency of light emission, It is preferable to use core-shell or core-multishell quantum dots. Examples of materials include zinc sulfide and zinc oxide.

[0177] In addition, quantum dots have a high proportion of surface atoms, making them highly reactive and less prone to aggregation. Therefore, a protective agent or a protective group is attached to the surface of the quantum dots. It is preferable that the protecting agent is attached or the protecting group is provided. It is possible to prevent aggregation and increase solubility in solvents. It is also possible to reduce reactivity and electrically It is also possible to improve stability. Examples of the protecting agent (or protecting group) include poliovirus. Polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene Polyoxyethylene alkyl ethers such as ethylene oleyl ether, tripropyl phosphatase phosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, etc. Trialkylphosphines, polyoxyethylene n-octylphenyl ether, polyoxyethylene Polyoxyethylene alkylphenyl ethers such as oxyethylene n-nonylphenyl ether amine, tri(n-hexyl)amine, tri(n-octyl)amine, tri(n-decyl)amine ) tertiary amines such as amine, tripropylphosphine oxide, tributylphosphine Oxide, trihexylphosphine oxide, trioctylphosphine oxide, tridecylphosphine oxide Organic phosphorus compounds such as silylphosphine oxide, polyethylene glycol dilaurate, polyethylene glycol diesters such as polyethylene glycol distearate, Organic nitrogen compounds such as pyridine, lutidine, collidine, quinolines, and other nitrogen-containing aromatic compounds , hexylamine, octylamine, decylamine, dodecylamine, tetradecylamine aminoalkanes such as dibutylsulfide, hexadecylamine, and octadecylamine; dialkyl sulfides such as dimethyl sulfoxide and dibutyl sulfoxide; organic sulfur compounds such as alkyl sulfoxides, sulfur-containing aromatic compounds such as thiophene, palmitic acid compounds, etc. Higher fatty acids such as acetic acid, stearic acid, and oleic acid, alcohols, sorbitan fatty acid esters, esters, fatty acid modified polyesters, tertiary amine modified polyurethanes, polyethylene Examples of such compounds include amines.

[0178] As quantum dots become smaller, their band gaps become larger, so the desired wavelengths can be obtained. The size of the crystal is adjusted accordingly to obtain long-range light. As the crystal size becomes smaller, The emission of quantum dots is shifted to the blue side, i.e., to higher energy, so quantum dots By varying the size of the ion beam, the wavelength range of the spectrum in the ultraviolet, visible, and infrared regions can be expanded. The emission wavelength can be adjusted over a wide range. The size (diameter) of the quantum dot is 0 The range of 0.5 nm to 20 nm, preferably 1 nm to 10 nm, is commonly used. The narrower the size distribution of quantum dots, the narrower the emission spectrum becomes, and the more colorless the light becomes. The quantum dots can be formed in any shape, including spherical. The quantum dots may be in the shape of a rod, a disk, or other shapes. Since quantum rods emit light polarized along the c-axis, they can be used as light-emitting materials. This makes it possible to obtain a light emitting element having better external quantum efficiency.

[0179] In addition, in many cases, the luminescence efficiency of EL elements is improved by dispersing the luminescent material in the host material. However, the host material has a higher singlet excitation energy or triplet excitation energy than the emitting material. In particular, when using blue phosphorescent materials, or more, and is a host material having an excellent lifetime. On the other hand, quantum dots can be formed without using a host material. Even if the light-emitting layer is made of only fluorine, the light-emitting efficiency can be maintained. In this respect, a preferable light-emitting device can be obtained. Preferably, the quantum dots have a core-shell structure (including a core-multishell structure). It is.

[0180] [Alignment film] The alignment films 94 and 98 can be made of a material containing polyimide resin or the like. For example, a material containing polyimide resin or the like is subjected to rubbing or light irradiation so as to be oriented in a predetermined direction. An alignment treatment may be performed.

[0181] [Colored film] The colored film 69 functions as a so-called color filter. Materials that transmit light of different colors (e.g., materials that transmit blue light, materials that transmit green light, materials that transmit red light, materials that transmit yellow light, or materials that transmit white light, etc.) can be used.

[0182] [Structure] The structure may be an organic material, an inorganic material, or a composite of an organic material and an inorganic material. An insulating material can be used. The insulating material can be the insulating films 32, 34, 40, Materials listed in 44, 48, 54, 62, 68, and 72 can be used.

[0183] [Sealing material] The sealing material 82 may be an inorganic material, an organic material, or a composite material of an inorganic material and an organic material. The organic material may be, for example, a heat-meltable resin or a heat-curable resin. The sealing material 82 may be an organic material containing a resin material. Using adhesives (reactive curing adhesives, photocuring adhesives, heat curing adhesives, anaerobic adhesives, etc.) The above-mentioned resin material may be an epoxy resin, an acrylic resin, or a silicone resin. resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) PVB (Polyvinyl Butyral) resin, EVA (Ethylene Vinyl Acetate) resin Examples of suitable resins include polyolefin resins.

[0184] Although not shown in FIGS. 1 to 24, the display device 500 has the following components: It's fine.

[0185] [Functional membrane] The display device 500 has a functional film in contact with either or both of the substrate 80 and the substrate 90. The functional film may include a polarizing plate, a retardation plate, a diffusion film, an anti-reflection film, etc. A film or a light collecting film can be used. antistatic film that suppresses static electricity, water-repellent film that makes it difficult for dirt to adhere, and a film that suppresses scratches that occur during use. A hard coat film or the like can be used.

[0186] [Light-shielding film] The display device 500 may have a light-shielding film between adjacent pixels that suppresses the transmission of light. The material of the light-shielding film may be a metal material or an organic resin material containing a black pigment. can be.

[0187] In this manner, in the display device of one embodiment of the present invention, the first to third display elements The elements can be controlled independently using different transistors. It is possible to provide a display device with high display quality.

[0188] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible.

[0189] (Embodiment 2) In this embodiment, a configuration in which an input device is attached to a display device according to one embodiment of the present invention will be described. This will be described with reference to FIG. 25 to FIG.

[0190] <2-1. Explanation of input devices> In this embodiment, a touch panel that combines the display device 500 and the input device is 2000 will be described. In addition, when a touch sensor is used as an example of an input device, We will explain about this.

[0191] 25(A) and 25(B) are perspective views of the touch panel 2000. 5(A) and 25(B), for clarity, a representative structure of the touch panel 2000 is shown. This shows the composition element.

[0192] The touch panel 2000 includes a display device 500 and a touch sensor 2595 (FIG. 25 25(A) and 25(B). The touch panel 2000 includes a substrate 80, a substrate 90, and a substrate 2590.

[0193] The display device 500 has a plurality of pixels on a substrate 80 and can supply signals to the pixels. The wiring 2511 is arranged to the outer periphery of the substrate 80. The terminal 2519 is connected to the FPC 2509(1) and a part of the terminal 2519 is connected to the FPC 2509(2). Connect emotionally.

[0194] The substrate 2590 is electrically connected to the touch sensor 2595. The plurality of wirings 2598 are routed around the periphery of the substrate 2590. A part of the terminal is electrically connected to the FPC2509(2). In FIG. 25(B), for clarity, the back side of the substrate 2590 (opposed to the substrate 80) is shown. Electrodes and wiring of the touch sensor 2595 provided on the surface facing the touch panel 2591 are indicated by solid lines.

[0195] As the touch sensor 2595, for example, a capacitive touch sensor can be used. The capacitive type includes a surface type capacitive type and a projected type capacitive type.

[0196] The projected capacitive type is classified into self-capacitance type, mutual capacitance type, etc., mainly based on the difference in the driving method. The mutual capacitance method is preferable because it enables simultaneous multi-point detection. The touch sensor 2595 shown in FIG. 5(B) is a projected capacitive touch sensor. It is a composition.

[0197] The touch sensor 2595 can detect the proximity or contact of a detection target such as a finger. Various sensors can be applied.

[0198] The projected capacitive touch sensor 2595 has an electrode 2591 and an electrode 2592. The electrode 2591 is electrically connected to one of a plurality of wirings 2598, and the electrode 2592 is electrically connected to any other of the plurality of wirings 2598.

[0199] The electrodes 2592 are repeatedly arranged in one direction as shown in FIG. 25(A) and FIG. 25(B). The shape is such that a number of quadrilaterals are connected at their corners.

[0200] The electrode 2591 is quadrilateral and is repeated in a direction intersecting the direction in which the electrode 2592 extends. are placed.

[0201] The wiring 2594 is electrically connected to the two electrodes 2591 that sandwich the electrode 2592. In this case, it is preferable that the area of ​​the intersection between the electrode 2592 and the wiring 2594 is as small as possible. This reduces the area of ​​the region where no electrodes are provided, reducing variations in transmittance. As a result, the variation in the brightness of the light passing through the touch sensor 2595 can be reduced. can be done.

[0202] The shapes of the electrodes 2591 and 2592 are not limited to this, and may take various shapes. For example, multiple electrodes 2591 are arranged with as few gaps as possible, and are A plurality of electrodes 2592 are provided at intervals so that there is an area where the electrodes 2592 do not overlap with the electrodes 2591. In this case, a wire may be provided between two adjacent electrodes 2592, which is electrically isolated from the two adjacent electrodes 2592. Providing an insulated dummy electrode is preferable because it can reduce the area of ​​the region with different transmittance. .

[0203] In addition, the conductive films such as the electrodes 2591, the electrodes 2592, and the wiring 2598, that is, the touch panel Materials that can be used for the wiring and electrodes that make up the filter include indium oxide, tin oxide, and oxide. Examples of the transparent conductive film include a transparent conductive film having zinc oxide or the like (e.g., ITO, etc.). As a material that can be used for the wiring and electrodes that constitute the device, for example, a material with a low resistance value is preferable. Examples include silver, copper, aluminum, carbon nanotubes, graphene, and halogens. Metal halide (silver halide, etc.) may also be used. Even if metal nanowires (diameters of several nanometers) are used, which are made up of multiple conductors, Alternatively, a metal mesh made of a conductor may be used. Nanowires, Cu nanowires, Al nanowires, Ag mesh, Cu mesh, Al plate For example, Ag nanowires may be used for the wiring and electrodes that make up the touch panel. When using a material with a visible light transmittance of 89% or more and a sheet resistance of 40 Ω / □ or more, In addition, the wiring and electrodes constituting the above-mentioned touch panel can be made to have a resistance of 0 Ω / □ or less. Examples of materials that can be used include metal nanowires, metal meshes, and carbon nanotubes. Tubes and graphene have high transmittance in visible light, so they are suitable for use as electrodes ( For example, it may be used as a pixel electrode or a common electrode.

[0204] <2-2. Explanation of touch sensor> Next, the touch sensor 2595 will be described in detail with reference to FIG. 25(B) along dashed line X1-X2.

[0205] The touch sensor 2595 includes electrodes 2591 and electrodes 2592 arranged in a staggered pattern on a substrate 2590. 2592, an insulating layer 2593 covering the electrodes 2591 and 2592, and adjacent electrodes 25 91 and a wiring 2594 that electrically connects them.

[0206] The electrode 2591 and the electrode 2592 are formed using a light-transmitting conductive material. Examples of conductive materials having the above structure include indium oxide, indium tin oxide, and indium zinc oxide. Conductive oxides such as zinc oxide, zinc oxide doped with gallium can be used. A film containing graphene may also be used. The film containing graphene may be, for example, an oxide film. The graphene-containing film can be formed by reducing it. Examples of methods include:

[0207] For example, a light-transmitting conductive material is formed on the substrate 2590 by a sputtering method. After that, various patterning techniques such as photolithography are used to remove unnecessary parts. , an electrode 2591 and an electrode 2592 can be formed.

[0208] The insulating layer 2593 may be made of, for example, acrylic resin or epoxy resin. Resin materials having siloxane bonds, silicon oxide, silicon oxynitride For example, an inorganic insulating material such as aluminum oxide can be used.

[0209] In addition, an opening reaching the electrode 2591 is provided in the insulating layer 2593, and a wiring 2594 is adjacent to the insulating layer 2593. The transparent conductive material is used to increase the aperture ratio of the touch panel. Since the electrode 2591 can be formed by the above-mentioned method, it can be suitably used for the wiring 2594. A material having a higher electrical conductivity than the electrode 2592 is preferable for the wiring 2594 because it can reduce electrical resistance. It can be used appropriately.

[0210] The electrodes 2592 extend in one direction, and a plurality of electrodes 2592 are provided in a stripe pattern. In addition, the wiring 2594 is provided so as to intersect with the electrode 2592.

[0211] A pair of electrodes 2591 are provided with one electrode 2592 interposed therebetween. A pair of electrodes 2591 are electrically connected.

[0212] In addition, the multiple electrodes 2591 are arranged in a direction that is not necessarily perpendicular to one electrode 2592. The angle does not have to be 0 degrees, and may be greater than 0 degrees but less than 90 degrees.

[0213] The wiring 2598 is electrically connected to the electrode 2591 or the electrode 2592. A part of the wiring 2598 functions as a terminal. The wiring 2598 is made of, for example, aluminum. Aluminum, gold, platinum, silver, nickel, titanium, tungsten, chromium, molybdenum, iron, Use of metal materials such as ballast, copper, or palladium, or alloy materials containing such metal materials. can be done.

[0214] An insulating layer is provided to cover the insulating layer 2593 and the wiring 2594, and the touch sensor 2595 may be protected.

[0215] The connection layer 2599 electrically connects the wiring 2598 and the FPC 2509(2). .

[0216] The connection layer 2599 is made of an anisotropic conductive film (ACF). conductive film) and anisotropic conductive paste (ACP) Conductive Paste) can be used.

[0217] <2-3. Explanation of the touch panel> Next, the touch panel 2000 will be described in detail with reference to FIG. 25(A) along dashed line X3-X4.

[0218] The touch panel 2000 shown in FIG. 27 includes a display having the pixels 10 described with reference to FIGS. The device 500 and the touch sensor 2595 described in FIG. 26 are attached to each other.

[0219] The touch panel 2000 shown in FIG. 27 includes the pixel 10 described in FIG. 4 and FIG. In addition to the display device 500 and the touch sensor 2595 described in FIG. 26, an adhesive layer 2597 and , and an anti-reflective layer 2569.

[0220] The adhesive layer 2597 is provided in contact with the wiring 2594. The substrate 2590 is attached to the substrate 90 so that the sensor 2595 overlaps the display device 500. In addition, it is preferable that the adhesive layer 2597 is transparent. The resin may be a thermosetting resin or an ultraviolet-curing resin. The resins used may be urethane, epoxy, or siloxane. Cut.

[0221] The antireflection layer 2569 is provided at a position overlapping the pixel 10. For example, a circular polarizing plate can be used.

[0222] The touch panel 2000 is a so-called out-cell type touch panel. One embodiment of the present invention is not limited to the above configuration, and may be an in-cell type touch panel or an on-cell type The touch panel may be a touch panel.

[0223] <2-4. Explanation of touch panel driving method> Next, an example of a method for driving a touch panel will be described with reference to FIG.

[0224] FIG. 28(A) is a block diagram showing the configuration of a mutual capacitance type touch sensor. In A), a pulse voltage output circuit 2601 and a current detection circuit 2602 are shown. In 28(A), the electrodes 2621 to which the pulse voltage is applied are designated as X1-X6, and the change in current The electrodes 2622 for detecting the voltage are designated Y1-Y6, and are illustrated with six wires each. FIG. 28(A) shows a capacitance 2 formed by overlapping an electrode 2621 and an electrode 2622. 603. The electrodes 2621 and 2622 have functions interchangeably. This is also fine.

[0225] The pulse voltage output circuit 2601 is for applying a pulse voltage to the wirings X1-X6 in sequence. This is a circuit. When a pulse voltage is applied to the wiring of X1-X6, a capacitance 2603 is formed. An electric field is generated between the electrodes 2621 and 2622. By using the change in the mutual capacitance of the capacitor 2603 caused by the or contact can be detected.

[0226] The current detection circuit 2602 detects the change in mutual capacitance of the capacitor 2603 between the wirings Y1-Y6. This is a circuit to detect changes in current at the sensor. The wiring of Y1-Y6 detects the proximity of the object to be detected, Or, if there is no contact, the detected current value will not change, but the proximity of the object to be detected, or When the mutual capacitance decreases due to contact, a change in the current value is detected. The detection may be performed using an integrating circuit or the like.

[0227] Next, FIG. 28B shows an input of the mutual capacitance type touch sensor shown in FIG. The timing chart of the output waveform is shown in FIG. 28(B). In FIG. 28(B), the case where the object is not detected ( Two cases are shown: when the sensor detects a target object (touch) and when the sensor detects a target object (non-touch). For the wiring Y1-Y6, the waveform is shown as a voltage value corresponding to the detected current value. There are.

[0228] A pulse voltage is applied to the wires X1-X6 in sequence, and the The waveform in the Y6 wiring changes. When there is no proximity or contact of the object to be detected, X1-X6 The waveforms of Y1-Y6 change uniformly according to the change in the voltage of the wiring. Or, at the point of contact, the current value decreases, and the corresponding voltage waveform also changes. do.

[0229] In this way, by detecting the change in mutual capacitance, the proximity or contact of the object to be detected can be detected. It is possible.

[0230] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible.

[0231] (Embodiment 3) In this embodiment, an oxide semiconductor film of a transistor disclosed in one embodiment of the present invention Next, metal oxides that can be used for the above-mentioned purpose will be described.

[0232] <3-1. Metal oxides>

[0233] In this specification, the term "metal oxide" refers to a metal in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). ), oxide semiconductor (also called oxide semiconductor or simply OS) For example, when a metal oxide is used in the active layer of a transistor, the metal Oxides are sometimes called oxide semiconductors. In other words, metal oxides have amplifying and rectifying properties. and switching action, the metal oxide is Metal oxide semiconductor, abbreviated as OS. In addition, when describing OS FET, it is possible to use a metal oxide or an oxide semiconductor. In other words, it is a transistor having a conductor.

[0234] In the present specification and the like, metal oxides having nitrogen are also referred to as metal oxides. Metal oxides containing nitrogen are also called metal oxynitrides (MEs). It may also be called tal oxynitride.

[0235] In the present specification, CAAC (c-axis aligned crystal l), and CAC (Cloud-Aligned Composite) CAAC represents an example of a crystal structure, and CAC represents a function or a material configuration. Shows an example.

[0236] In the present specification and the like, CAC-OS or CAC-metal oxide means A part of the material has a conductive function and a part of the material has an insulating function, and the whole material has It functions as a semiconductor. When de is used in the active layer of a transistor, the conductive function is to transport electrons (or The function of insulating is to allow the flow of electrons (carriers) and not allow the flow of electrons (electrons). The conductive function and the insulating function work in a complementary manner, The switching function (the function to turn on / off) can be set to CAC-OS or CAC-metal. It can be added to CAC-OS or CAC-metal oxide. By separating the functions of each, it is possible to maximize the functions of both. can.

[0237] In the present specification and the like, CAC-OS or CAC-metal oxide is The conductive region has the above-mentioned conductive function and the insulating function. The conductive region has the insulating function described above. The regions may be separated at the nanoparticle level. The conductive regions may be unevenly distributed in the material. They may be observed connected in a dot-like pattern.

[0238] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and The insulating regions are each 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. They may be dispersed in the material at sizes of less than one millimeter.

[0239] In addition, CAC-OS or CAC-metal oxide has different band gaps For example, CAC-OS or CAC-metal ox The ide consists of a wide gap component due to the insulating region and a conductive region. In this configuration, when the carrier flows, In addition, carriers mainly flow in the narrow gap component. The component with a gap acts complementary to the component with a wide gap to produce a narrow gap. Carriers also flow to the wide gap component in conjunction with the component with a large gap. CAC-OS or CAC-metal oxide is used as the channel formation region of the transistor. When used in a transistor, it has a high current driving force in the on-state, i.e., a large on-current. , and high field effect mobility can be obtained.

[0240] That is, CAC-OS or CAC-metal oxide is a matrix composite. matrix composite, or metal matrix composite It can also be called a composite matrix.

[0241] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible.

[0242] (Embodiment 4) In this embodiment, a display module and an electronic device including a display device according to one embodiment of the present invention will be described. This will be described with reference to FIGS. 29 to 31.

[0243] <4-1. Display module> The display module 8000 shown in FIG. 29 includes an upper cover 8001 and a lower cover 8002. Between them, FPC8003 is connected to touch panel 8004, and FPC8005 is connected. A display panel 8006, a frame 8009, a printed circuit board 8010, and a battery 8011 are Yes.

[0244] The display device of one embodiment of the present invention can be used for the display panel 8006, for example.

[0245] The upper cover 8001 and the lower cover 8002 are connected to the touch panel 8004 and the display panel The shape and dimensions can be changed as appropriate to match the size of 8006.

[0246] The touch panel 8004 is a resistive or capacitive touch panel. The display panel 8006 can be used by overlapping it with the opposing substrate (sealing substrate). It is also possible to provide the display panel 8 with a touch panel function. It is also possible to provide an optical sensor in each pixel of the display panel 006 to make it into an optical touch panel.

[0247] The frame 8009 protects the display panel 8006 and also supports the movement of the printed circuit board 8010. It also functions as an electromagnetic shield to block electromagnetic waves generated by the operation of the frame. The frame 8009 may also function as a heat sink.

[0248] The printed circuit board 8010 includes a power supply circuit, a signal circuit for outputting a video signal, and a clock signal. The power supply circuit is provided with a signal processing circuit. Alternatively, the power source may be a battery 8011 provided separately. , this can be omitted when using a commercial power source.

[0249] In addition, the display module 8000 includes components such as a polarizing plate, a retardation plate, and a prism sheet. It may be added.

[0250] <4-2.Electronic equipment> 30(A) to 30(E) and 31(A) to 31(E) show electronic devices. These electronic devices include a housing 9000, a display unit 9001, a camera 9002, a switch A speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal Child 9006, sensor 9007 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, Light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, (including functions for measuring flow rate, humidity, gradient, vibration, odor, or infrared rays), 9008, etc.

[0251] The electronic devices shown in FIGS. 30(A) to 30(E) and 31(A) to 31(E) are For example, various information (still images, videos, text images, etc.) can be stored in the memory. Functions for displaying the date, time, etc. on the display, touch panel function, calendar, etc. The function to display, the function to control processing by various software (programs), the function to transmit wirelessly Communication function, function to connect to various computer networks using wireless communication function, wireless communication A function to transmit or receive various data using the communication function, The device can have a function to read out programs or data and display them on the display unit. The electronic devices shown in FIGS. 30(A) to 30(E) and FIGS. 31(A) to 31(E) The functions that the has are not limited to these, and it may have other functions.

[0252] The electronic device shown in FIG. 30(A) to FIG. 30(E) and FIG. 31(A) to FIG. 31(E) The details are explained below.

[0253] FIG. 30A is a perspective view showing a television device 9100. 100 means a large screen, e.g., 50 inches or more, 80 inches or more, or 100 inches or more It is possible to incorporate a display unit 9001 such as the above.

[0254] FIG. 30B shows a portable information terminal 9101, FIG. 30C shows a portable information terminal 9102, FIG. 30(D) shows a portable information terminal 9103, and FIG. 30(E) shows a portable information terminal 9104. FIG.

[0255] A portable information terminal 9101 shown in FIG. 30(B) is, for example, a telephone, a notebook, an information viewing device, etc. Specifically, it can be used as a smartphone. Although not shown, the portable information terminal 9101 is equipped with a speaker 9003, A connection terminal 9006, a sensor 9007, and the like may be provided. Text and image information can be displayed on multiple sides of the screen. For example, three operation buttons 90 50 (also called operation icons or simply icons) on one side of the display unit 9001. Also, information 9051 indicated by a dashed rectangle can be displayed on another surface of the display unit 9001 (for example , side). An example of the information 9051 is an e-mail or S Displays and notifies you of incoming calls such as NS (social networking services) and telephone calls. Subjects of e-mails and SNS, sender names of e-mails and SNS, date and time, time, battery The remaining battery level, the strength of the received signal, etc. Instead of the information 9051, an operation button 9050 or the like may be displayed. A display portion 9001 included in the terminal 9101 has a partially curved surface.

[0256] A portable information terminal 9102 shown in FIG. 30C displays information on three or more screens of a display unit 9001. Here, information 9052, information 9053, and information 9054 are different. For example, the user of the mobile information terminal 9102 may When the mobile information terminal 9102 is stored in a pocket, the display (information 9053 in this case) Specifically, the telephone number or name of the caller of the incoming call can be confirmed. The display is placed at a position where it can be seen from above the mobile information terminal 9102. You can check the display and decide whether to answer the call or not without taking the 102 out of your pocket. In addition, a display portion 9001 of the portable information terminal 9102 has a partially curved surface.

[0257] The portable information terminal 9103 shown in FIG. 30(D) is a portable information terminal 9101 or 910 shown previously. Unlike 2, the display unit 9001 does not have a curved surface.

[0258] In addition, a portable information terminal 9104 shown in FIG. 30(E) has a curved display portion 9001. Also, as shown in FIG. 30(E), a camera 9002 is provided on a mobile information terminal 9104, The function to take still images, record videos, and store the images on a recording medium (external or The camera has a function to store the captured image on the camera (built-in camera), and a function to display the captured image on the display unit 9001. preferable.

[0259] FIG. 31(A) shows a wristwatch-type portable information terminal 9200, and FIG. 9201.

[0260] The mobile information terminal 9200 shown in FIG. 31(A) is a terminal for mobile telephone, e-mail, document browsing, and creation. Various applications such as music playback, Internet communication, and computer games The display surface of the display unit 9001 is curved, and the curved The portable information terminal 9200 can display information on a display surface that is aligned in a direction parallel to the screen. For example, a headset capable of wireless communication can be used. By communicating with the mobile terminal, you can talk hands-free. The terminal 9200 has a connection terminal 9006 and can directly exchange data with other information terminals via a connector. It is also possible to charge the battery via the connection terminal 9006. The charging operation may be performed by wireless power supply without using the connection terminal 9006.

[0261] 31(B) is the same as the portable information terminal 9201 shown in FIG. Unlike the portable information terminal 9200, the display surface of the display unit 9001 is not curved. The outer shape of the display unit of 01 is non-rectangular (circular in FIG. 31(B)).

[0262] 31C to 31E are perspective views showing a foldable portable information terminal 9202. FIG. 31C is a perspective view of the portable information terminal 9202 in an unfolded state. 31(D) moves the mobile information terminal 9202 from one side of the unfolded state to the other side of the folded state. 31(E) is a perspective view of the portable information terminal 9202 in a folded state. FIG.

[0263] The portable information terminal 9202 is highly portable when folded, and can be connected to a computer when unfolded. The wide display area without eyes provides excellent visibility of the display. The unit 9001 is supported by three housings 9000 connected by hinges 9055. The two housings 9000 are bent via the hinge 9055, forming a portable information terminal. The 9202 can be reversibly transformed from an unfolded state to a folded state. For example, the portable information terminal 9202 can be bent with a radius of curvature of 1 mm or more and 150 mm or less. .

[0264] Note that the display device which is one embodiment of the present invention can be suitably used for the display portion 9001. .

[0265] The electronic device described in this embodiment has a display unit for displaying some information. However, the semiconductor device of one embodiment of the present invention is an electronic device that does not have a display portion. This can also be applied to vessels.

[0266] Note that the structure described in this embodiment mode may be used in appropriate combination with structures described in other embodiments. It is possible. [Explanation of symbols]

[0267] ANODE wiring CATHODE Wiring CSCOM Wiring Cs_E1 Capacitor element Cs_E2 Capacitive element Cs_E3 Capacitor element Cs_E4 Capacitive element Cs_E5 Capacitive element Cs_E6 Capacitive element Cs_E7 Capacitive element Cs_E8 Capacitor element Cs_L Capacitive element GL_E1 scanline GL_E2 scanline GL_L scanline MA1 Transistor MA2 Transistor MA3 Transistor MA4 Transistor MA5 Transistor MB1 Transistor MB2 Transistor MB3 Transistor MB4 Transistor SL_E1 signal line SL_E2 signal line SL_L signal line TCOM Cabling Tr1 Transistor Tr2 Transistor Tr3 Transistor Tr4 Transistor Tr5 Transistor 10 pixels 12 Display element 12d display area 14 Display element 14a Display element 14b Display element 14B Display element 14Bd display area 14d display area 14G display element 14Gd display area 14R Display element 14Rd display area 14W display element 14Wd display area 16 Capacitive element 18 Capacitive element 30 Substrate 31 Conductive Film 32 Insulating film 34 Insulating film 36 Conductive Film 38 Conductive Film 40 Insulating film 42 Conductive Film 44 Insulating Film 45 Opening 46a Conductive film 46b Conductive film 46c Conductive film 46d Conductive film 46e Conductive film 46f conductive film 48 Insulating Film 50a Oxide semiconductor film 50b Oxide semiconductor film 50c Oxide semiconductor film 51 Opening 52a Conductive film 52b Conductive film 52c conductive film 52d Conductive film 52e Conductive film 52f Conductive film 52g Conductive film 52h Conductive film 54 Insulating Film 55 Opening 56a Oxide semiconductor film 56b Oxide semiconductor film 58a Conductive film 58b Conductive film 58c conductive film 58d Conductive film 62 Insulating film 63a opening 63b opening 63c opening 64a Conductive film 64b Conductive film 68 Insulating Film 69 Colored film 70a Conductive film 70b Conductive film 72 Insulating Film 76 EL layer 78 Conductive Film 80 Substrate 82 Encapsulating materials 90 Substrate 92 Conductive Film 94 Orientation Film 96 Liquid crystal layer 98 Orientation Film 500 display device 502 Pixel section 504a Gate driver circuit section 504b Gate driver circuit section 506 Source driver circuit section 508 External circuit 2000 Touch Panel 2509 FPC 2511 Wiring 2519 Terminal 2569 Anti-reflection layer 2590 Board 2591 Electrode 2592 Electrode 2593 Insulation layer 2594 Wiring 2595 Touch Sensor 2597 Adhesive layer 2598 Wiring 2599 Connection Layer 2601 Pulse voltage output circuit 2602 Current detection circuit 2603 Capacity 2621 Electrode 2622 Electrode 8000 Display Module 8001 Top cover 8002 Lower cover 8003 FPC 8004 Touch Panel 8005 FPC 8006 Display Panel 8009 Frame 8010 Printed Circuit Board 8011 Battery 9000 Chassis 9001 Display section 9002 Camera 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9050 Operation button 9051 Information 9052 Information 9053 Information 9054 Information 9055 Hinge 9100 Television equipment 9101 Portable information terminal 9102 Portable information terminal 9103 Mobile information terminal 9104 Portable information terminal 9200 Mobile Information Terminal 9201 Portable information terminals 9202 Mobile information terminals

Claims

1. a pixel including a first transistor, a dual-gate second transistor, a wiring to which a data signal is applied, and a light-emitting element; the first transistor has a function of writing the data signal to the second transistor; the second transistor has a function of driving the light-emitting element in response to the data signal; the wiring to which the data signal is applied and a gate electrode on a lower side of the second transistor have the same metal; The wiring to which the data signal is applied is arranged in the vertical direction of the pixel, The lower gate electrode is arranged in an island shape, the first transistor includes a first oxide semiconductor film, The second transistor includes a second oxide semiconductor film.

2. In claim 1, a conductive film for supplying a potential to a source or a drain of the second transistor; The conductive film is disposed in the vertical direction of the pixels.

3. In claim 1 or 2, A light-emitting device, wherein the wiring to which the data signal is applied and the lower gate electrode of the second transistor are disposed on the same insulating surface.

Images