Image sensor

Abstract

To provide an image sensor that miniaturizes signal interference between a phase signal received for an automatic focal function and a color signal received for image generation.SOLUTION: An image sensor includes: a first pixel group containing first to fourth pixels arranged in 2*2; a second pixel group that is arranged so as to be adjacent to the first pixel group in a first direction while containing fifth to eighth pixels arranged in 2*2; a first lens that is formed so as to correspond to the first and second pixels; a second lens that is formed so as to correspond to the third and fourth pixels; an element separation pattern that electrically separates the first and second pixel groups; and a reading circuit that is electrically connected to the first to eighth pixels. The reading circuit outputs phase data on the basis of the first and second lenses and a phase signal received via one part of pixels of the first pixel group, and outputs image data on the basis of a color signal received from one part of pixels from the second pixel group.SELECTED DRAWING: Figure 4A

Description

[Technical field]

[0001] The present invention relates to image sensors, and more particularly to image sensors that minimize signal interference between phase signals received for autofocus functions and color signals received for image generation. [Background technology]

[0002] The image sensor is a semiconductor-based sensor that receives light and generates an electrical signal, and includes a pixel array having a plurality of unit pixels, and a circuit for driving the pixel array to generate an image. The unit pixels each include a photodiode that generates an electric charge in response to external light.

[0003] However, signal interference between photodiodes of adjacent pixels can reduce the performance of the image sensor. In this case, deep trench isolation (DTI) is formed between multiple photodiodes to prevent the crosstalk phenomenon. Meanwhile, in the field of image sensors, an auto focus function that automatically determines the focus of a subject based on the phase difference between signals received from at least two pixels is being actively used.

[0004] However, in recent years, DTI has not been formed in some areas between unit pixels, which may cause signal interference between the photodiode used for the autofocus function and the adjacent diode. Therefore, the performance of the image sensor's autofocus function may be reduced. Additionally, the quality of the image produced by the image sensor may be reduced. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] U.S. Pat. No. 11,075,236 Summary of the Invention [Problem to be solved by the invention]

[0006] The present invention has been made in consideration of the problems in the conventional image sensors described above, and an object of the present invention is to provide an image sensor that minimizes signal interference between a phase signal received for an autofocus function and a color signal received for image generation. [Means for solving the problem]

[0007] In order to achieve the above object, an image sensor according to the present invention includes a first pixel group including a first pixel, a second pixel, a third pixel, and a fourth pixel arranged in a 2×2 matrix; a second pixel group including a fifth pixel, a sixth pixel, a seventh pixel, and an eighth pixel arranged in a 2×2 matrix, the second pixel group being adjacent to the first pixel group in a first direction; a first lens formed to correspond to the first pixel and the second pixel; a second lens formed to correspond to the third pixel and the fourth pixel; an element isolation pattern electrically isolating the first pixel group and the second pixel group; and a readout circuit electrically connected to the first to eighth pixels, wherein the readout circuit outputs phase data based on phase signals received through the first lens, the second lens, and at least some of the pixels in the first pixel group, and outputs image data based on color signals received from at least some of the pixels in the second pixel group.

[0008] In order to achieve the above object, an image sensor according to the present invention includes an image sensor including a plurality of pixels, each of which includes pixels arranged in a 2×2 matrix, a first pixel group to a fourth pixel group arranged in a 2×2 matrix, a fifth pixel group including pixels arranged in a 2×2 matrix and arranged adjacent to the fourth pixel group, and a readout circuit electrically connected to the plurality of pixels, wherein the readout circuit outputs phase data based on a first phase signal and a second phase signal obtained from at least a portion of the pixels in the first pixel group in a first mode, and outputs the phase data based on a third phase signal obtained from at least a portion of the pixels in the first pixel group and a fourth phase signal obtained from at least a portion of the pixels in the fifth pixel group in a second mode.

[0009] In addition, an image sensor including a plurality of pixels according to an embodiment of the present invention includes a first pixel group including first to fourth pixels arranged in a 2×2 matrix, a second pixel group including fifth to eighth pixels arranged in a 2×2 matrix and disposed adjacent to the first pixel group, a first lens formed to correspond to at least two pixels among the first to eighth pixels, an isolation pattern electrically isolating the plurality of pixels, and a readout circuit electrically connected to the plurality of pixels, wherein the isolation pattern is formed between pixels included in the first pixel group and includes a plurality of portions electrically isolating the first pixel, the second pixel, the third pixel, and the fourth pixel from each other, each of the plurality of portions being formed to be spaced apart from a center of the first pixel group, and the readout circuit may output phase data based on a phase signal received through the first lens, and output image data based on color signals received from pixels among the plurality of pixels excluding the pixel corresponding to the first lens. Effect of the Invention

[0010] In the image sensor according to the present invention, a readout circuit receives color signals in different modes based on the amount of light received through a pixel array, and generates image data using the color signals received in different modes according to a change in the illumination environment, thereby increasing the image quality and / or resolution of the generated image data, and minimizing signal interference between phase signals generated through floating diffusion nodes in a pixel group. [Brief description of the drawings]

[0011] [Figure 1] 1 is a block diagram showing a schematic configuration of an image sensor according to an embodiment of the present invention. [Figure 2A] FIG. 2 is a plan view illustrating an example of a pixel array 110 of FIG. [Figure 2B] 2B is a cross-sectional view of a portion of the pixel array of FIG. 2A taken along line AA'. [Diagram 3] FIG. 2B is a circuit diagram illustrating an example of a first pixel group in the pixel array of FIG. 2A. [Figure 4A] 3 illustrates a first lens and a second lens formed to correspond to pixels included in a first pixel group in the pixel array of FIG. 2 according to an embodiment of the present invention. [Figure 4B] 3 is a diagram showing a first lens and a second lens formed to correspond to pixels included in a first pixel group in the pixel array of FIG. 2 according to another embodiment. [Diagram 5] 4C is a cross-sectional view of a portion of the pixel array of FIG. 4B taken along line BB'. [Figure 6A] 4A and 4B are diagrams illustrating first to fourth lenses formed to correspond to pixels included in a first pixel group and a fifth pixel group in a pixel array according to an embodiment of the present invention. [Figure 6B]13A and 13B are diagrams illustrating first to fourth lenses formed to correspond to pixels included in a first pixel group and a fifth pixel group in a pixel array according to another embodiment of the present invention. [Figure 7A] 3 is a diagram showing a first lens formed to correspond to a pixel included in a first pixel group in the pixel array of FIG. 2 according to an embodiment of the present invention. [Figure 7B] 3 is a diagram showing a first lens formed to correspond to a pixel included in a first pixel group in the pixel array of FIG. 2 according to another embodiment of the present invention. [Figure 8A] 3A and 3B are diagrams illustrating first lenses formed to correspond to two pixels included in different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention. [Figure 8B] 3 is a diagram showing a first lens formed to correspond to two pixels included in different pixel groups in the pixel array of FIG. 2 according to another embodiment of the present invention. [Figure 9A] 3 is a diagram showing a first lens and a second lens formed to correspond to two pixels included in different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention. [Figure 9B] 3 is a diagram showing a first lens and a second lens formed to correspond to two pixels included in different pixel groups in the pixel array of FIG. 2 according to another embodiment of the present invention. [Figure 10] 3 is a diagram showing a first lens formed to correspond to four pixels included in two different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention. [Figure 11] 3 is a diagram showing first lenses formed to correspond to four pixels included in four different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] Next, a specific example of an embodiment of an image sensor according to the present invention will be described with reference to the drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following, the embodiments of the present invention are described clearly and in detail to such an extent that those skilled in the art can easily practice the present invention.

[0013] FIG. 1 is a block diagram showing a schematic configuration of an image sensor according to an embodiment of the present invention. Referring to FIG. 1, the image sensor 100 includes a pixel array 110, a row driver 120, an analog-to-digital converter (ADC, 130), a readout circuit 140, a timing controller 150, and an image signal processor 160.

[0014] The pixel array 110 according to the embodiment of the present invention includes a plurality of unit pixels 112 . Furthermore, the pixel array 110 includes a number of pixel groups, which are collections of a number of unit pixels 112 . In this case, each pixel group includes at least two unit pixels 112 that share the same microlens ML. The pixel array 110 receives pixel drive signals, such as a reset signal RS, a transmit signal TS, and a select signal SEL, from a row driver 120. The pixel array 110 operates under the control of the received pixel drive signals, and each unit pixel 112 converts an optical signal into an electrical signal.

[0015] The electrical signals generated by each unit pixel 112 are provided to an analog-to-digital converter 130 through a plurality of column lines CLm. In this case, the analog signal generated by each unit pixel 112 contains image information and phase information. In one embodiment, at least some of the unit pixels 112 may have a shared pixel structure in which different photodiodes PD share a single floating diffusion node FD. However, this is merely an example, and each of the unit pixels 112 may have a different floating diffusion node FD.

[0016] The row driver 120 selects one of the rows in the pixel array 110 under the control of the timing controller 150 . The row driver 120 generates a selection signal SEL to select one of the multiple rows. The row driver 120 activates the reset signal RS and the transmission signal TS for the pixels corresponding to the selected row in a predetermined order. The analog-to-digital converter 130 receives the reset level signal and the sensing signal generated from each of the pixels in the selected row. Here, the reset level signal is a signal corresponding to a reference voltage of the floating diffusion node, and the sensing signal is a signal corresponding to a signal voltage of the floating diffusion region.

[0017] The analog-to-digital converter 130 converts the reset level signal and the sensing signal into digital signals and outputs them. For example, the analog-to-digital converter 130 samples the reset level signal and the sensing signal using a correlated double sampling method, and then converts the samples into digital signals. For this purpose, a correlated double sampler (CDS) is further disposed at the front end of the analog-to-digital converter 130 . The readout circuit 140 latches and outputs the digital signals for each column provided by the analog-to-digital converter 130 . To this end, the read circuit 140 includes an output buffer. The readout circuitry 140 may also include an image data generator 141 and a phase data generator 142 .

[0018] According to one embodiment, the image data generator 141 generates image data IDAT based on digital signals received from a plurality of pixels included in the pixel array 110 . More specifically, the image data generator 141 generates the image data IDAT by combining digital signals received from a plurality of pixels included in the pixel array 110 . For example, the image data generator 141 receives a first digital signal corresponding to a pixel located on the left side of a pixel group and a second digital signal corresponding to a pixel located on the right side of the pixel group. Here, the first digital signal and the second digital signal each include image information and phase information.

[0019] The image data generator 141 generates image data IDAT by combining the first digital signal and the second digital signal. At this time, the phase information of the first digital signal DS1 and the phase information of the second digital signal DS2 cancel each other out. According to one embodiment, the phase data generator 142 receives digital signals corresponding to at least two or more pixels included in a number of pixel groups. For example, the phase data generator 142 receives a digital signal corresponding to a pixel located to the left of at least two or more pixels, and bins the signal to extract first phase information. In this case, the digital signal corresponding to the pixel located to the left of the at least two or more pixels is referred to as the first phase signal.

[0020] In addition, the phase data generator 142 receives a digital signal corresponding to a pixel located on the right side of at least two or more pixels, and bins the signal to extract second phase information. In this case, the digital signal corresponding to the pixel located to the right of the at least two or more pixels is referred to as the second phase signal. The phase data generator 142 uses the first phase information and the second phase information to generate phase data PDAT. For example, the phase data generator 142 compares the first phase signal and the second phase signal to generate the phase data PDAT.

[0021] The timing controller 150 controls at least some of the pixel array 110, the row driver 120, the analog-to-digital converter (ADC) 130, and the readout circuit 140. The timing controller 150 provides control signals, such as a clock signal, a timing control signal, etc., for the operation of the pixel array 110, the row driver 120, the analog-to-digital converter (ADC) 130, and the readout circuit 140. The timing controller 150 may include a logic control circuit, a phase lock loop (PLL) circuit, a timing control circuit, a communication interface circuit, and the like.

[0022] The image sensor 100 according to the embodiment of the present invention includes an image signal processor (ISP) 160 coupled to the readout circuitry 140 . According to another embodiment, the image signal processor 160 may be implemented as a separate chip from the image sensor 100 . The image signal processor 160 performs processing on the phase data PDAT and image data IDAT provided by the readout circuit 140 . For example, the image signal processor 160 uses the phase data PDAT received from the readout circuit 140 to perform an auto focus (AF) function that measures the focus on an object. Also, the image signal processor 160 uses the image data IDAT received from the readout circuit 140 to generate an image of the subject.

[0023] 2A is a diagram showing an example of the pixel array 110 of FIG. 1, FIG. 2B is a cross-sectional view of a portion of the pixel array of FIG. 2A taken along line A-A', and FIG. 3 is a circuit diagram showing an example of a first pixel group in the pixel array of FIG. 2A. 2A and 2B, a pixel array 110 according to an embodiment of the present invention includes a plurality of pixels (PX1 to PX16) and an isolation pattern 330 that electrically isolates the plurality of pixels. In this case, each of the multiple pixels (PX1 to PX16) is understood to correspond to the unit pixel 112 in FIG.

[0024] 2A, the pixel array 110 includes a first pixel group 311, a second pixel group 312, a third pixel group 313, and a fourth pixel group 314, each of which is composed of pixels arranged in a 2×2 matrix. For example, the pixel array 110 includes a first pixel group 311 including a first pixel PX1 to a fourth pixel PX4 arranged in a 2×2 matrix. The pixel array 110 also includes a second pixel group 312 including a fifth pixel PX5 to an eighth pixel PX8 arranged in a 2×2 matrix. The pixel array 110 also includes a third pixel group 313 including a ninth pixel PX9 to a twelfth pixel PX12 arranged in a 2×2 matrix. The pixel array 110 also includes a fourth pixel group 314 including a thirteenth pixel PX13 to a sixteenth pixel PX16 arranged in a 2×2 matrix. The first pixel group 311 to the fourth pixel group 314 are arranged in a 2×2 matrix to form the pixel array 110. Thus, for example, pixel array 110 may include, but is not limited to, 16 pixels arranged in a 4x4 array.

[0025] 1 and 2A, an image sensor 100 according to an embodiment of the present invention includes a plurality of microlenses formed to correspond to at least one pixel among a plurality of pixels (PX1 to PX16). For example, the image sensor 100 includes a first microlens formed to correspond to the first pixel PX1 and the second pixel PX2, and a second microlens formed to correspond to the fifth pixel PX5. However, the configuration of the microlens formed to correspond to at least one pixel is not limited to the above example.

[0026] The pixel array 110 includes an isolation pattern 330 that electrically isolates a plurality of pixels. More specifically, the element isolation pattern 330 includes a first isolation pattern 321 that electrically isolates the first to fourth pixel groups 311 to 314 from each other. According to an embodiment, the device isolation pattern 330 includes a plurality of portions 331, 332, 333, and 334 extending from the first isolation pattern 321 to electrically isolate a plurality of pixels. The element isolation pattern 330 is formed between the pixels included in the first pixel group 311, and includes a plurality of portions (331, 332, 333, 334) that electrically isolate the first pixel PX1 to the fourth pixel PX4 from one another.

[0027] In this case, the multiple portions (331, 332, 333, 334) include a first portion 331 that extends in the second direction (eg, the +y direction) between the first pixel PX1 and the second pixel PX2. The first pixel PX1 and the second pixel PX2 are electrically isolated from each other by the first portion 331. The multiple portions (331, 332, 333, 334) also include a second portion 332 that extends in the opposite direction to the first direction (eg, the -x direction) between the second pixel PX2 and the fourth pixel PX4. The second pixel PX2 and the fourth pixel PX4 are electrically isolated from each other by the second portion 332.

[0028] Furthermore, the multiple portions (331, 332, 333, 334) include a third portion 333 that extends in the opposite direction to the second direction (eg, the -y direction) between the third pixel PX3 and the fourth pixel PX4. The third pixel PX3 and the fourth pixel PX4 are electrically isolated from each other by the third portion 333. Additionally, the multiple portions (331, 332, 333, 334) include a fourth portion 334 extending in the first direction (eg, the +x direction) between the third pixel PX3 and the first pixel PX1. The third pixel PX3 and the first pixel PX1 are electrically isolated from each other by the fourth portion 334.

[0029] According to an embodiment, the first portion 331 , the second portion 332 , the third portion 333 , and the fourth portion 334 are each formed to be spaced apart from the center C of the first pixel group 311 . For example, one end of each of the first portion 331, the second portion 332, the third portion 333, and the fourth portion 334 is connected to the first isolated pattern 321, and the other end is formed to be spaced apart from the center C of the first pixel group 311. As another example, the portions 331, 332, 333, and 334 may be formed to be spaced apart from the center C of the first isolated pattern 321 and the first pixel group 311, respectively. In this case, for example, the isolation pattern 330 is formed through a deep trench isolation (DTI) process, but is not limited thereto. As another example, the isolation pattern 330 may be formed through a shallow trench isolation (STI) process. Also, for example, the element isolation pattern 330 may be formed of oxide and / or polysilicon.

[0030] The pixel array 110 includes floating diffusion nodes (FD1, FD2, FD3, FD4) that are electrically connected to a number of pixels. More specifically, the pixel array 110 includes a first floating diffusion node FD1 to a fourth floating diffusion node FD4 electrically connected to the pixels included in each of the pixel groups (311, 312, 313, 314). For example, the pixel array 110 includes a first floating diffusion node FD1 electrically connected to the first pixel PX1 to the fourth pixel PX4 included in the first pixel group 311. The pixel array 110 also includes a second floating diffusion node FD2 electrically connected to the fifth pixel PX5 to the eighth pixel PX8 included in the second pixel group 312. The pixel array 110 further includes a third floating diffusion node FD3 electrically connected to the ninth pixel PX9 to the twelfth pixel PX12 included in the third pixel group 313. The pixel array 110 also includes a fourth floating diffusion node FD4 electrically connected to the thirteenth pixels PX13 to 16th pixels PX16 included in the fourth pixel group 314.

[0031] According to an embodiment, the first floating diffusion node FD1 to the fourth floating diffusion node FD4 are formed at positions corresponding to the centers of the respective pixel groups. For example, the first floating diffusion node FD1 is formed at a position corresponding to the center C of the first pixel group 311. However, the position where the floating diffusion node is formed is not limited to the above example, and the floating diffusion node may be formed at various positions that can be electrically connected to a plurality of pixels.

[0032] According to an embodiment, the first portion 331, the second portion 332, the third portion 333, and the fourth portion 334 are formed to be spaced apart from the first floating diffusion node FD1 to the fourth floating diffusion node FD4, respectively. In addition, the isolation pattern 330 further includes a plurality of portions that extend into the second pixel group 312, the third pixel group 313, and the fourth pixel group 314, respectively, and are spaced apart from the centers of the respective pixel groups (312, 313, 314). In this case, the portions extending toward the center of each pixel group (312, 313, 314) may also be formed to be spaced apart from the second floating diffusion node FD2 to the fourth floating diffusion node FD4. Through this, the pixel array 110 according to the present invention can reduce the area required to form a floating diffusion node for each of the plurality of pixels. Additionally, the pixel array 110 may reduce wiring and structures for connecting multiple pixels to the floating diffusion nodes.

[0033] Referring to FIG. 2B, the pixel array 110 according to the embodiment of the present invention includes a substrate 210, a color filter 230, a light-transmitting layer 220, and an insulating layer 270. In this case, the substrate 210 includes a plurality of pixels (PX1, PX4) and corresponding photodiodes (PD1, PD4). According to an embodiment, a color filter 230 and a light transmitting layer 220 are sequentially disposed on one surface of a substrate 210 . For example, the color filter 230 in the area corresponding to the first pixel group 311 is a green color filter, but is not limited thereto. The photodiodes (PD1, PD4) capture light that has passed through the microlens, the light-transmitting layer 220, and the color filter 230. An insulating layer 270 is disposed below the photodiodes (PD1, PD4) or the substrate 210. For example, the insulating layer 270 includes a plurality of elements 260 and a wiring pattern 280 connected to the plurality of elements 260 . The plurality of elements 260 and wiring pattern 280 included in the insulating layer 270 operate to acquire pixel signals from a plurality of pixels (PX1, PX4).

[0034] According to one embodiment, a first photodiode PD1 corresponding to the first pixel PX1 and a fourth photodiode PD4 corresponding to the fourth pixel PX4 share a first floating diffusion node FD1. Each of the plurality of elements 260 adjacent to the first floating diffusion node FD1 is referred to as a transfer transistor. In this case, the gate of the transfer transistor may have a vertical structure with at least a partial area embedded in the substrate 210 . The pixels (PX1, PX2, PX3, PX4) included in the first pixel group 311 are electrically isolated from the pixels (PX5, PX6, PX7, PX8) included in the second pixel group 312 by a first isolation pattern 321. The element isolation pattern 330 (or the first isolation pattern 321) may be isolated to such an extent that charge overflow does not occur between adjacent photodiodes.

[0035] 2A, 2B and 3, a first pixel group 311 according to an embodiment of the present invention includes a first pixel PX1 to a fourth pixel PX4 that share a first floating diffusion node FD1. In this case, the first pixel PX1 and the third pixel PX3 are disposed on the left side L from the center C, and the second pixel PX2 and the fourth pixel PX4 are disposed on the right side R from the center C. The charges generated through each of the first to fourth photodiodes PD1 to PD4 are transferred to the first floating diffusion node FD1 through the first to fourth transfer transistors TX1 to TX4. In this case, the charges generated through each of the first photodiode PD1 to the fourth photodiode PD4 are sequentially transferred to the first floating diffusion node FD1 by the transfer signals (TS1, TS2, TS3, TS4) transferred from the timing controller 150 to the first transfer transistor TX1 to the fourth transfer transistor TX4.

[0036] For example, the charge generated through the first photodiode PD1 may be transferred to the first floating diffusion node FD1 in response to the first transmission signal TS1 transferred to the first transmission transistor TX1. In addition, the charge stored in the first floating diffusion node FD1 is transferred to the driving transistor DX and output to the output voltage Vout through the selection transistor SX. Then, the charge stored in the first floating diffusion node FD1 is reset in response to a reset signal RS transmitted from the timing controller 150 to the reset transistor RX. Then, the charges generated through the second photodiode PD2 are transferred to the first floating diffusion node FD1 in response to the second transfer signal TS2 transferred to the second transfer transistor TX2. Thus, the image sensor 100 according to the present invention can reduce the cost and area required to implement a floating diffusion node for each unit pixel 112 . Furthermore, the image sensor 100 according to the present invention can improve the resolution of the image data IDAT generated by the readout circuit 140 .

[0037] FIG. 4A is a diagram showing a first lens and a second lens formed to correspond to a pixel included in a first pixel group in the pixel array of FIG. 2 according to an embodiment of the present invention, FIG. 4B is a diagram showing a first lens and a second lens formed to correspond to a pixel included in a first pixel group in the pixel array of FIG. 2 according to another embodiment of the present invention, and FIG. 5 is a cross-sectional view of a portion of the pixel array of FIG. 4B cut along line B-B'.

[0038] 4A and 4B, an image sensor 100A, 100B according to an embodiment of the present invention includes lenses formed to correspond to two adjacent pixels among a plurality of pixels included in a pixel array 110. More specifically, the image sensors 100A and 100B each include a lens formed to correspond to two adjacent pixels among the plurality of pixels included in the first pixel group 311.

[0039] Referring to FIG. 4A, the image sensor 100A includes a first lens 411A and a second lens 412A formed to correspond to two adjacent pixels in a first direction (e.g., the x direction) among the pixels included in the first pixel group 311. For example, the image sensor 100A includes a first lens 411A formed to correspond to the first pixel PX1 and the second pixel PX2 in the first pixel group 311, and a second lens 412A formed to correspond to the third pixel PX3 and the fourth pixel PX4.

[0040] Referring to FIG. 4B, the image sensor 100B includes a first lens 411B and a second lens 412B formed to correspond to two adjacent pixels in a second direction (e.g., the y direction) among the multiple pixels included in the first pixel group 311. For example, the image sensor 100B includes a first lens 411B formed to correspond to the first pixel PX1 and the third pixel PX3 in the first pixel group 311, and a second lens 412B formed to correspond to the second pixel PX2 and the fourth pixel PX4. Meanwhile, the image sensors (100A, 100B) include a plurality of microlenses formed to correspond to each of the pixels other than the first pixel PX1 to the fourth pixel PX4 among the plurality of pixels. For example, microlenses are provided corresponding to each of the plurality of pixels excluding the first pixel PX1 to the fourth pixel PX4. For example, a fifth pixel PX5 is provided with a microlens, a sixth pixel PX6 is provided with another microlens, a seventh pixel PX7 is provided with another microlens, and an eighth pixel PX8 is provided with another microlens.

[0041] 1 and 4A, the readout circuit 140 according to the embodiment of the present invention obtains a phase signal through the first lens 411A, the second lens 412A, and the pixels included in the first pixel group 311. More specifically, the readout circuit 140 acquires a first phase signal through the first lens 411A and the first pixel PX1 or the second pixel PX2. For example, the readout circuit 140 acquires a first phase signal through the first lens 411A and the first pixel PX1. Moreover, the readout circuit 140 acquires a second phase signal through the second lens 412A and the third pixel PX3 or the fourth pixel PX4. For example, the readout circuit 140 acquires a second phase signal through the second lens 412A and the fourth pixel PX4.

[0042] According to another embodiment, referring to both FIG. 1 and FIG. 4B, the readout circuit 140 obtains a first phase signal through the first lens 411B and the first pixel PX1 and / or the third pixel PX3. Moreover, the readout circuit 140 acquires a second phase signal through the second lens 412B and the second pixel PX2 and / or the fourth pixel PX4. For example, the readout circuit 140 acquires a first phase signal through the first lens 411B and the third pixel PX3. Additionally, the readout circuit 140 acquires a second phase signal through the second lens 412B and the fourth pixel PX4.

[0043] Furthermore, the read circuit 140 outputs phase data PDAT based on the first phase signal and the second phase signal. More specifically, the phase data generator 142 compares the first phase signal and the second phase signal. Based on the comparison result, the phase data generator 142 generates phase data PDAT including the focal length for the object. Furthermore, the read circuit 140 outputs the generated phase data PDAT. Referring to the above-mentioned configuration, the readout circuit 140 obtains a first phase signal through the first lens (411A, 411B) and obtains a second phase signal through the second lens (412A, 412B). In this case, the first lenses (411A, 411B) and the second lenses (412A, 412B) are formed to correspond to two adjacent pixels among the plurality of pixels arranged in a 2×2 matrix. Thus, the image sensors 100A and 100B according to the present invention can minimize signal interference between phase signals generated through the first floating diffusion nodes FD1 in the first pixel group 311.

[0044] Meanwhile, the readout circuit 140 according to the embodiment of the present invention operates in a first mode or a second mode based on the amount of light received through the pixel array 110 . More specifically, the readout circuit 140 operates in a first mode when the amount of light received through the pixel array 110 is equal to or greater than a preset reference value. The readout circuit 140 operates in a second mode when the amount of light received through the pixel array 110 is less than a preset reference value. For example, the readout circuit 140 operates in a first mode in a high light environment and in a second mode in a low light environment.

[0045] The readout circuit 140 receives, in the first mode, from the fifth pixel PX5 to the sixteenth pixel PX16 among the plurality of pixels PX1 to PX16, a first color signal assigned to each of the pixels. For example, the readout circuit 140 obtains a red color signal through the fifth pixel PX5 and a green color signal through the thirteenth pixel PX13. Furthermore, the read circuit 140 outputs image data IDAT based on the first color signal through the image data generator 141 in the first mode. More specifically, the image data generator 141 generates the image data IDAT by synthesizing the first color signals received from each of the fifth pixel PX5 to the sixteenth pixel PX16. The read circuit 140 outputs the generated image data IDAT.

[0046] Meanwhile, in the second mode, the readout circuit 1400 obtains second color signals assigned to each pixel group from the second pixel group 312, the third pixel group 313, and the fourth pixel group 314. For example, the readout circuit 140 obtains a red color signal through the pixels included in the second pixel group 312 and obtains a blue color signal through the pixels included in the third pixel group 313 . Furthermore, the read circuit 140 outputs image data IDAT based on the second color signal through the image data generator 141 in the second mode. More specifically, the image data generator 141 synthesizes the second color signals received from each of the second pixel group 312 to the fourth pixel group 314 to generate the image data IDAT. The read circuit 140 outputs the generated image data IDAT.

[0047] Referring to the above configuration, the readout circuit 140 receives color signals in different modes based on the amount of light received through the pixel array 110 . That is, the image sensors 100A and 100B generate image data IDAT using color signals received in different modes according to changes in the illuminance environment. Through this, the image sensor 100A, 100B according to the present invention can increase the image quality and / or resolution of the generated image data IDAT.

[0048] 4B and 5, the photodiodes according to the embodiment of the present invention are electrically isolated from each other by an isolation pattern 330. As shown in FIG. However, it can be understood that at least a part of the configuration shown in FIG. 5 (eg, the light-transmitting layer 220, the insulating layer 270, etc.) is substantially the same as the configuration shown in FIG. 2B. The same reference numerals are used for components that are the same or substantially the same as those described above, and duplicated descriptions will be omitted.

[0049] More specifically, the first pixel PX1 and the second pixel PX2 included in the first pixel group 311 are electrically isolated from the fifth pixel PX5 and the sixth pixel PX6 included in the second pixel group 312 by the element isolation pattern 330 (or the first isolation pattern 321). In this case, the first photodiode PD1 and the second photodiode PD2 correspond to the first pixel PX1 and the second pixel PX2, respectively, and the fifth photodiode PD5 and the sixth photodiode PD6 correspond to the fifth pixel PX5 and the sixth pixel PX6, respectively. Therefore, the first photodiode PD1 and the second photodiode PD2 are electrically isolated from the fifth photodiode PD5 and the sixth photodiode PD6 by the element isolation pattern 330 (or the first isolation pattern 321).

[0050] The readout circuit 140 receives the phase signal through at least some of the first lens 411B, the second lens 412B, the first photodiode PD1, and the second photodiode PD2. The readout circuit 140 also receives color signals through at least some of the first microlens 511, the second microlens 512, the fifth photodiode PD5, and the sixth photodiode PD6. In this case, signal interference between the phase signal and the color signal is minimized by the element isolation pattern 330 (or the first isolation pattern 321). For example, signal interference between a phase signal received through the second lens 412B and the second photodiode PD2 and a color signal received through the first microlens 511 and the fifth photodiode PD5 is reduced through the first separation pattern 321.

[0051] Referring to the above configuration, the image sensors 100A and 100B according to the embodiments of the present invention minimize signal interference between phase signals and color signals received through the pixel array 110. Through this, the image sensors 100A and 100B can improve the signal quality of the phase data PDAT and the image data IDAT. Furthermore, the image sensor 100 can improve the performance of an auto focus (AF) function using the phase data PDAT. In addition, the image sensors (100A, 100B) can improve the quality of the image generated from the image data IDAT.

[0052] FIG. 6A is a diagram showing a first lens to a fourth lens formed to correspond to pixels included in a first pixel group and a fifth pixel group in a pixel array according to an embodiment of the present invention, and FIG. 6B is a diagram showing a first lens to a fourth lens formed to correspond to pixels included in a first pixel group and a fifth pixel group in a pixel array according to another embodiment of the present invention.

[0053] 6A and 6B, a pixel array 110 according to an embodiment of the present invention includes a first pixel group 311 to an eighth pixel group 318 each of which is composed of pixels arranged in a 2×2 matrix. However, it will be understood that the first pixel group 311 to the fourth pixel group 314 shown in FIGS. 6A and 6B correspond to the first pixel group 311 to the fourth pixel group 314 shown in FIG. 2A. Therefore, the same reference numerals will be used for components that are the same or substantially the same as those described above, and duplicated descriptions will be omitted.

[0054] The image sensors 100C and 100D also include four lenses each formed to correspond to two adjacent pixels among the plurality of pixels included in the pixel array 110. More specifically, the image sensors (100C, 100D) include first lenses (611A, 611B) and second lenses (612A, 612B) formed to correspond to two adjacent pixels each among the plurality of pixels included in the first pixel group 311. The image sensors 100C and 100D also include third lenses 613A and 613B and fourth lenses 614A and 614B formed to correspond to two pixels each among the plurality of pixels included in the fifth pixel group 315.

[0055] Referring to FIG. 6A, the image sensor 100C includes a first lens 611A and a second lens 612A formed to correspond to two adjacent pixels along a first direction (e.g., the x direction) among a plurality of pixels included in a first pixel group 311. The image sensor 100C also includes a third lens 613A and a fourth lens 614A formed to correspond to two adjacent pixels along a first direction (e.g., the x direction) among the multiple pixels included in the fifth pixel group 315. According to one embodiment, the readout circuit 140 acquires a first phase signal in a first mode through at least a portion of the first lens 611A, the first pixel PX1, and the second pixel PX2. For example, the readout circuit 140 acquires a first phase signal through the first lens 611A and the first pixel PX1 in the first mode. Additionally, in the first mode, the readout circuit 140 acquires a second phase signal through at least a portion of the second lens 612A, the third pixel PX3, and the fourth pixel PX4. For example, the readout circuit 140 acquires a second phase signal through the second lens 612A and the fourth pixel PX4 in the first mode.

[0056] Referring to FIG. 6B according to another embodiment of the present invention, an image sensor 100D includes a first lens 611B and a second lens 612B formed to correspond to two adjacent pixels along a second direction (e.g., the y direction) among a plurality of pixels included in a first pixel group 311. The image sensor 100D also includes a third lens 613B and a fourth lens 614B formed to correspond to two adjacent pixels along the second direction (e.g., the y direction) among the multiple pixels included in the fifth pixel group 315. In the first mode, the readout circuit 140 acquires a first phase signal through the first lens 611B and the first pixel PX1 and / or the third pixel PX3. Furthermore, in the first mode, the readout circuit 140 acquires a second phase signal through the second lens 612B and the second pixel PX2 and / or the fourth pixel PX4.

[0057] Furthermore, in the first mode, the read circuit 140 outputs phase data PDAT based on the first phase signal and the second phase signal. More specifically, in a first mode, the read circuit 140 utilizes a phase data generator 142 to compare the first and second phase signals. Based on the comparison result, the readout circuit 140 outputs (or generates) phase data PDAT, which includes the focal length for the object.

[0058] According to one embodiment, the readout circuit 140 acquires a third phase signal through at least some of the pixels included in the first pixel group 311 in the second mode. For example, referring to FIG. 6A, the readout circuit 140 acquires a third phase signal through the first lens 611A, the first pixel PX1, and the second pixel PX2 in the second mode. As another example, referring to FIG. 6B, the readout circuit 140 acquires a third phase signal through the second lens 612B, the second pixel PX2, and the fourth pixel PX4 in the second mode. Additionally, the readout circuit 140 acquires a fourth phase signal through at least some of the pixels included in the fifth pixel group 315 in the second mode.

[0059] For example, referring to FIG. 6A, the readout circuit 140 acquires a fourth phase signal through the third lens 613A, the seventeenth pixel PX17, and the eighteenth pixel PX18 in the second mode. As another example, referring to FIG. 6B, the readout circuit 140 acquires a fourth phase signal through the fourth lens 614B, the eighteenth pixel PX18, and the twentieth pixel PX20 in the second mode. Furthermore, in the second mode, the read circuit 140 outputs phase data PDAT based on the third phase signal and the fourth phase signal. More specifically, in the second mode, the readout circuit 140 utilizes a phase data generator 142 to compare the third phase signal and the fourth phase signal. Based on the comparison result, the readout circuit 140 outputs (or generates) phase data PDAT, which includes the focal length for the object.

[0060] Referring to the above-described configuration, when the amount of light received through the pixel array 110 is less than a reference value, the readout circuit 140 obtains a third phase signal and a fourth phase signal through a lens formed to correspond to some pixels in a pixel group spaced apart from each other. Furthermore, the read circuit 140 outputs phase data PDAT based on the third phase signal and the fourth phase signal. The image sensor (100C, 100D) (or the image signal processor 160) performs an autofocus function that uses the phase data PDAT to measure the focal length of an object. As a result, the image sensors 100C and 100D according to the present invention can improve the performance of the autofocus function using the phase data PDAT even when the amount of light received through the pixel array 110 is less than a reference value.

[0061] FIG. 7A is a diagram showing a first lens formed to correspond to a pixel included in a first pixel group in the pixel array of FIG. 2 according to an embodiment of the present invention, and FIG. 7B is a diagram showing a first lens formed to correspond to a pixel included in a first pixel group in the pixel array of FIG. 2 according to another embodiment of the present invention. 7A and 7B, the image sensors (100E, 100F) according to embodiments of the present invention include first lenses (711A, 711B) formed to correspond to pixels included in a first pixel group 311 in the pixel array 110. More specifically, the image sensor (100E, 100F9) includes first lenses (711A, 711B) formed to correspond to two adjacent pixels among the pixels included in the first pixel group 311.

[0062] Referring to FIG. 7A, an image sensor 100E according to an embodiment of the present invention includes a first lens 711A formed to correspond to a third pixel PX3 in a first pixel group 311 and a fourth pixel PX4 adjacent to the third pixel PX3 in a first direction (e.g., the x direction). Referring to FIG. 7B, an image sensor 100F according to another embodiment of the present invention includes a first lens 711B formed to correspond to a first pixel PX1 in a first pixel group 311 and a third pixel PX3 adjacent to the first pixel PX1 in a second direction (e.g., the y direction). According to one embodiment, the readout circuit 140 obtains a first phase signal and a second phase signal from two pixels corresponding to the first lens (711A, 711B), respectively.

[0063] For example, referring to FIG. 7A, the readout circuit 140 obtains a first phase signal through the first lens 711A and the third pixel PX3, and obtains a second phase signal through the first lens 711A and the fourth pixel PX4. As another example, referring to FIG. 7B, the readout circuit 140 obtains a first phase signal through the first lens 711B and the first pixel PX1, and obtains a second phase signal through the first lens 711B and the third pixel PX3. The read circuit 140 outputs the phase data PDAT through the phase data generator 142 based on the first phase signal and the second phase signal. More specifically, the phase data generator 142 compares the first phase signal with the second phase signal to generate the phase data PDAT. The read circuit 140 outputs the generated phase data PDAT. In this case, the phase data PDAT includes information related to the focus on the object.

[0064] The image signal processor 160 performs an auto focus function based on the phase data PDAT received from the readout circuit 140 . Also, the readout circuit 140 obtains color signals from the pixels in the pixel array 110 excluding the pixels corresponding to the first lenses (711A, 711B). For example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 except for the third pixel PX3 and the fourth pixel PX4. As another example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 except for the first pixel PX1 and the third pixel PX3. Furthermore, the read circuit 140 outputs image data IDAT through an image data generator 141 based on the color signal. More specifically, the image data generator 141 synthesizes the received color signals to generate image data IDAT. The read circuit 140 outputs the generated image data IDAT.

[0065] Thus, the image sensors 100E and 100F according to the present invention perform an auto focus function for an object based on a signal received through the pixel array 110. Moreover, the image sensors (100E, 100F) generate images of the subject. Therefore, the image sensor (100E, 100F) according to the present invention can improve the performance of the autofocus function for the object. Additionally, the image sensors (100E, 100F) may improve the quality and / or resolution of the images produced.

[0066] FIG. 8A is a diagram showing a first lens formed to correspond to two pixels included in different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention, and FIG. 8B is a diagram showing a first lens formed to correspond to two pixels included in different pixel groups in the pixel array of FIG. 2 according to another embodiment of the present invention.

[0067] Referring to both Figures 8A and 8B, the image sensor (100G, 100H) according to an embodiment of the present invention includes a first lens (811A, 811B) formed to correspond to two pixels included in different pixel groups in the pixel array 110. 8A, an image sensor 100G according to an embodiment of the present invention includes a first lens 811A formed to correspond to a fourth pixel PX4 in the first pixel group 311 and a seventh pixel PX7 in the second pixel group 312. For example, the fourth pixel PX4 and the seventh pixel PX7 are disposed adjacent to each other along the first direction (eg, the x direction). 8B, an image sensor 100H according to another embodiment of the present invention includes a first lens 811B formed to correspond to a seventh pixel PX7 in the second pixel group 312 and a thirteenth pixel PX13 in the fourth pixel group 314. For example, the seventh pixel PX7 and the thirteenth pixel PX13 are disposed so as to be adjacent to each other in the second direction (eg, the y direction).

[0068] According to one embodiment, the readout circuit 140 obtains a first phase signal and a second phase signal from two pixels corresponding to the first lens (811A, 811B), respectively. For example, referring to FIG. 8A, the readout circuit 140 obtains a first phase signal through the first lens 811A and the fourth pixel PX4, and obtains a second phase signal through the first lens 811A and the seventh pixel PX7. As another example, referring to FIG. 8B, the readout circuit 140 obtains a first phase signal through the first lens 811B and the seventh pixel PX7, and obtains a second phase signal through the first lens 811B and the thirteenth pixel PX13.

[0069] The phase data generator 142 generates the phase data PDAT based on the first phase signal and the second phase signal. More specifically, the phase data generator 142 compares the first phase signal with the second phase signal to generate the phase data PDAT. The read circuit 140 outputs the generated phase data PDAT. In this case, the phase data PDAT includes information related to the focus of the object. The image signal processor 160 performs an auto focus function based on the phase data PDAT received from the readout circuit 140 . Also, the readout circuit 140 obtains color signals from the pixels in the pixel array 110 excluding the pixels corresponding to the first lenses (811A, 811B). For example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 except for the fourth pixel PX4 and the seventh pixel PX7.

[0070] As another example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 except for the seventh pixel PX7 and the thirteenth pixel PX13. Furthermore, the read circuit 140 outputs image data IDAT through an image data generator 141 based on the color signal. More specifically, the image data generator 141 synthesizes the received color signals to generate image data IDAT. The read circuit 140 outputs the generated image data IDAT.

[0071] Thus, the image sensors 100G and 100H according to the present invention perform an auto focus function for an object based on a signal received through the pixel array 110. In addition, the image sensor (100G, 100H9 generates an image of the subject. Therefore, the image sensor (100G, 100H) according to the present invention can improve the performance of the autofocus function for the object. Additionally, the image sensor (100G, 100H9) can improve the quality and / or resolution of the images produced.

[0072] FIG. 9A is a diagram showing a first lens and a second lens formed to correspond to two pixels each included in a different pixel group in the pixel array of FIG. 2 according to an embodiment of the present invention, and FIG. 9B is a diagram showing a first lens and a second lens formed to correspond to two pixels each included in a different pixel group in the pixel array of FIG. 2 according to another embodiment of the present invention. Referring to both Figures 9A and 9B, an image sensor (100I, 100J) according to an embodiment of the present invention includes a first lens (911A, 911B) and a second lens (912A, 912B) each formed to correspond to two pixels included in different pixel groups in a pixel array 110.

[0073] Referring to FIG. 9A, an image sensor 100I according to an embodiment of the present invention includes a first lens 911A and a second lens 912A formed to correspond to two adjacent pixels in a first direction (e.g., x-direction) in different pixel groups. For example, the image sensor 100I includes a first lens 911A formed to correspond to the second pixel PX2 in the first pixel group 311 and the fifth pixel PX5 in the second pixel group 312. The image sensor 100I also includes a second lens 912A formed to correspond to the fourth pixel PX4 in the first pixel group 311 and the seventh pixel PX7 in the second pixel group 312.

[0074] Referring to FIG. 9B, an image sensor 100J according to another embodiment of the present invention includes a first lens 911B and a second lens 912B formed to correspond to two adjacent pixels in a second direction (e.g., y direction) in different pixel groups. For example, the image sensor 100J includes a first lens 911B formed to correspond to the seventh pixel PX7 in the second pixel group 312 and the thirteenth pixel PX13 in the fourth pixel group 314. The image sensor 100J also includes a second lens 912B formed to correspond to the eighth pixel PX8 in the second pixel group 312 and the fourteenth pixel PX14 in the fourth pixel group 314. According to one embodiment, the readout circuit 140 obtains a first phase signal from at least a portion of the two pixels corresponding to the first lens (911A, 911B). The readout circuit 140 also acquires a second phase signal from at least a portion of the two pixels corresponding to the second lenses (912A, 912B).

[0075] Referring to FIG. 9A, the readout circuit 140 acquires a first phase signal through the first lens 911A and the second pixel PX2 or the fifth pixel PX5, and acquires a second phase signal through the second lens 912A and the fourth pixel PX4 or the seventh pixel PX7. For example, the readout circuit 140 obtains a first phase signal through the first lens 911A and the second pixel PX2, and obtains a second phase signal through the second lens 912A and the seventh pixel PX7. Referring to FIG. 9B, the readout circuit 140 acquires a first phase signal through the first lens 911B and the seventh pixel PX7 or the thirteenth pixel PX13, and acquires a second phase signal through the second lens 912B and the eighth pixel PX8 or the fourteenth pixel PX14. For example, the readout circuit 140 obtains a first phase signal through the first lens 911B and the seventh pixel PX7, and obtains a second phase signal through the second lens 912B and the eighth pixel PX8.

[0076] The read circuit 140 outputs the phase data PDAT through the phase data generator 142 based on the first phase signal and the second phase signal. More specifically, the phase data generator 142 compares the first phase signal with the second phase signal to generate the phase data PDAT. The read circuit 140 outputs the generated phase data PDAT. In this case, the phase data PDAT includes information related to the focal length for the object. The image signal processor 160 performs an auto focus function based on the phase data PDAT received from the readout circuit 140 . In addition, the readout circuit 140 obtains color signals from pixels in the pixel array 110 excluding the pixels corresponding to the first lenses (911A, 911B) and the second lenses (912A, 912B).

[0077] For example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 excluding the second pixel PX2, the fourth pixel PX4, the fifth pixel PX5, and the seventh pixel PX7. As another example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 except for the seventh pixel PX7, the eighth pixel PX8, the thirteenth pixel PX13, and the fourteenth pixel PX14. Furthermore, the read circuit 140 can output image data IDAT through an image data generator 141 based on the color signal. More specifically, the image data generator 141 synthesizes the received color signals to generate image data IDAT. The read circuit 140 outputs the generated image data IDAT.

[0078] Thus, the image sensors 100I and 100J according to the present invention perform an auto focus function for an object based on a signal received through the pixel array 110. Moreover, the image sensors (100I, 100J) generate images of the subject. Therefore, the image sensor (100I, 100J) according to the present invention can improve the performance of the autofocus function for the object. Additionally, the image sensors (100I, 100J) may improve the quality and / or resolution of the images produced.

[0079] FIG. 10 is a diagram illustrating first lenses formed to correspond to four pixels included in two different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention. 10, an image sensor 100K according to an embodiment of the present invention includes a first lens 1011 formed to correspond to four pixels included in two different pixel groups in a pixel array 110. In the example shown in FIG. More specifically, the image sensor 100K includes a first lens 1011 formed to correspond to four pixels arranged in a 2×2 array in two different pixel groups.

[0080] For example, the image sensor 100K includes a first lens 1011 formed to correspond to a second pixel PX2, a fourth pixel PX4, a fifth pixel PX5, and a seventh pixel PX7. In this case, the second pixel PX2 and the fourth pixel PX4 are included in the first pixel group 311. In addition, the fifth pixel PX5 and the seventh pixel PX7 are included in the second pixel group 312. According to one embodiment, the readout circuit 140 obtains the first phase signal and the second phase signal from at least a portion of the four pixels corresponding to the first lens 1011 . More specifically, the readout circuit 140 acquires a first phase signal through at least a portion of the second pixel PX2 and the fourth pixel PX4, and acquires a second phase signal through at least a portion of the fifth pixel PX5 and the seventh pixel PX7.

[0081] For example, in response to a first control signal (eg, a timing control signal) received from the timing controller 150, the readout circuit 140 obtains a first phase signal through the second pixel PX2. In addition, in response to a second control signal received from the timing controller 150 following the first control signal, the readout circuit 140 obtains a second phase signal through the seventh pixel PX7. Furthermore, the read circuit 140 outputs, through a phase data generator 142, phase data PDAT based on the first phase signal and the second phase signal. More specifically, the phase data generator 142 compares the first phase signal with the second phase signal to generate the phase data PDAT. The read circuit 140 outputs the generated phase data PDAT. In this case, the phase data PDAT includes information related to the focal length for the object.

[0082] The image signal processor 160 performs an auto focus function based on the phase data PDAT received from the readout circuit 140 . Also, the readout circuit 140 obtains color signals from the pixels in the pixel array 110 excluding the pixel corresponding to the first lens 1011 . For example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 excluding the second pixel PX2, the fourth pixel PX4, the fifth pixel PX5, and the seventh pixel PX7. Furthermore, the read circuit 140 outputs image data IDAT through an image data generator 141 based on the color signal. More specifically, the image data generator 141 synthesizes the received color signals to generate image data IDAT. The read circuit 140 outputs the generated image data IDAT.

[0083] Thus, the image sensor 100K according to the present invention performs an auto focus function on an object based on a signal received through the pixel array 110. Moreover, the image sensor 100K generates an image of the subject. Therefore, the image sensor 100K according to the present invention can improve the performance of the autofocus function for the object. Additionally, image sensor 100K may improve the quality and / or resolution of the images produced.

[0084] FIG. 11 is a diagram illustrating first lenses formed to correspond to four pixels included in four different pixel groups in the pixel array of FIG. 2 according to an embodiment of the present invention. 11, an image sensor 100L according to an embodiment of the present invention includes first lenses 1111 formed to correspond to four pixels included in different pixel groups in a pixel array 110. In the example shown in FIG. More specifically, the image sensor 100L includes a first lens 1111 formed to correspond to four pixels arranged in a 2×2 matrix in four different pixel groups.

[0085] For example, the image sensor 100L includes a first lens 1111 formed to correspond to a fourth pixel PX4, a seventh pixel PX7, a tenth pixel PX10, and a thirteenth pixel PX13. In this case, the fourth pixel PX4 is included in the first pixel group 311. In addition, the seventh pixel PX7 is included in the second pixel group 312. Furthermore, the tenth pixel PX10 is included in the third pixel group 313. Additionally, the thirteenth pixel PX13 is included in the fourth pixel group 314.

[0086] According to one embodiment, the readout circuit 140 obtains the first phase signal and the second phase signal from at least a portion of the four pixels corresponding to the first lens 1111 . More specifically, the readout circuit 140 acquires a first phase signal through at least a portion of the fourth pixel PX4 and the tenth pixel PX10, and acquires a second phase signal through at least a portion of the seventh pixel PX7 and the thirteenth pixel PX13. For example, in response to a first control signal (eg, a timing control signal) received from the timing controller 150, the readout circuit 140 obtains a first phase signal through the fourth pixel PX4. In addition, the readout circuit 140 acquires a second phase signal through the thirteenth pixel PX13 in response to a second control signal received from the timing controller 150 following the first control signal.

[0087] Furthermore, the read circuit 140 outputs, through a phase data generator 142, phase data PDAT based on the first phase signal and the second phase signal. More specifically, the phase data generator 142 compares the first phase signal with the second phase signal to generate the phase data PDAT. The read circuit 140 outputs the generated phase data PDAT. In this case, the phase data PDAT includes information related to the focal length for the object. The image signal processor 160 performs an auto focus function based on the phase data PDAT received from the readout circuit 140 .

[0088] Also, the readout circuit 140 obtains color signals from the pixels in the pixel array 110 excluding the pixel corresponding to the first lens 1111 . For example, the readout circuit 140 obtains color signals from pixels in the pixel array 110 excluding the fourth pixel PX4, the seventh pixel PX7, the tenth pixel PX10, and the thirteenth pixel PX13. Furthermore, the read circuit 140 outputs image data IDAT through an image data generator 141 based on the color signal. More specifically, the image data generator 141 synthesizes the received color signals to generate image data IDAT. The read circuit 140 outputs the generated image data IDAT.

[0089] Thus, the image sensor 100L according to the present invention performs an auto focus function on an object based on a signal received through the pixel array 110. Moreover, the image sensor 100L generates an image of the subject. Therefore, the image sensor 100L according to the present invention can improve the performance of the autofocus function for the object. Additionally, image sensor 100L may improve the quality and / or resolution of the images produced.

[0090] As described above, the image sensor 100 according to an embodiment of the present invention can minimize signal interference between the phase and color signals received from the pixel array 110. In addition, the image sensor 100 according to an embodiment of the present invention can minimize signal interference between phase signals acquired through different lenses within a particular pixel group. In addition, the image sensor 100 according to the embodiment of the present invention can improve the signal quality of the phase signal and the color signal by minimizing signal interference between the phase signal and the color signal. In addition, the image sensor 100 according to the embodiment of the present invention can improve the performance of an autofocus function that uses phase data generated based on a phase signal. Furthermore, the image sensor 100 according to the embodiment of the present invention can improve the quality of a color signal, thereby improving the image quality and / or resolution of an image generated through the image sensor 100.

[0091] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the technical scope of the present invention. [Explanation of symbols]

[0092] 100, 100A, 100B Image Sensor 110 pixel array 112 unit pixels 120 Low Driver 130 Analog-to-Digital Converter 140 Readout circuit 141 Image Data Generator 142 Phase Data Generator 150 Timing Controller 160 Image Signal Processor 210 Substrate 220 Light transmission layer 230 Color Filter 260 Multiple Elements 270 Insulating Layer 280 Wiring Pattern 311 1st Pixel Group 312 2nd Pixel Group 313 3rd Pixel Group 314 4th Pixel Group 315 5th Pixel Group 316 6th Pixel Group 317 7th Pixel Group 318 8th Pixel Group 321 First Separation Pattern 330 Element isolation pattern 331 Part 1 332 Part 2 333 Part 3 334 Part 4 411, 411A, 411B First lens 412, 412A, 412B 2nd lens 511 1st microlens 512 2nd microlens FD1~FD4 (1st~4th) floating diffusion nodes PX1~PX16 (1st~16th) pixels

Claims

1. An image sensor, a first pixel group including a first pixel, a second pixel, a third pixel, and a fourth pixel arranged in a 2×2 matrix; a second pixel group including a fifth pixel, a sixth pixel, a seventh pixel, and an eighth pixel arranged in a 2×2 matrix, the second pixel group being adjacent to the first pixel group in a first direction; a first lens formed to correspond to the first pixel and the second pixel; a second lens formed to correspond to the third pixel and the fourth pixel; an isolation pattern electrically isolating the first pixel group from the second pixel group; a readout circuit electrically connected to the first to eighth pixels; The read circuit includes: outputting phase data based on phase signals received through the first lens, the second lens, and at least some of the pixels in the first pixel group; an image sensor that outputs image data based on color signals received from at least some of the pixels in the second pixel group;

2. the element isolation pattern is formed between pixels included in the first pixel group and includes a plurality of portions that electrically isolate the first pixel, the second pixel, the third pixel, and the fourth pixel from one another; The image sensor of claim 1 , wherein each of the plurality of portions is spaced apart from a center of the first pixel group.

3. The read circuit includes: acquiring a first phase signal through the first lens and at least a portion of the first pixel and the second pixel; acquiring a second phase signal through the second lens and at least a portion of the third pixel and the fourth pixel; 2. The image sensor according to claim 1, wherein the phase data is output based on the first phase signal and the second phase signal.

4. a third pixel group including ninth to twelfth pixels arranged in a 2×2 matrix and adjacent to the first pixel group in a second direction perpendicular to the first direction; a fourth pixel group including thirteenth to sixteenth pixels arranged in a 2×2 matrix and adjacent to the second pixel group in the second direction; 2. The image sensor of claim 1, wherein the readout circuit receives color signals from pixels included in the second pixel group to the fourth pixel group and outputs the image data.

5. The plurality of portions are a first portion extending in a second direction perpendicular to the first direction between the first pixel and the second pixel; a second portion extending in a direction opposite to the first direction between the second pixel and the fourth pixel; a third portion extending in a direction opposite to the second direction between the third pixel and the fourth pixel; a fourth portion extending in the first direction between the first pixel and the third pixel, 3. The image sensor of claim 2, further comprising a floating diffusion node electrically connected to the first, second, third, and fourth pixels.

6. the first to fourth portions are formed to be spaced apart from the floating diffusion node, the floating diffusion node is formed at a position corresponding to a center of the first pixel group; The image sensor of claim 5 , wherein the first pixel, the second pixel, the third pixel, and the fourth pixel are electrically connected to the floating diffusion node.

7. 1. An image sensor including a plurality of pixels, First to fourth pixel groups each including pixels arranged in a 2×2 matrix, the first to fourth pixel groups being arranged in a 2×2 matrix; a fifth pixel group including pixels arranged in a 2×2 matrix and disposed adjacent to the fourth pixel group; a readout circuit electrically connected to the plurality of pixels; The read circuit includes: In a first mode, outputting phase data based on a first phase signal and a second phase signal obtained from at least a portion of the pixels in the first pixel group; an image sensor comprising: an image sensor outputting the phase data in a second mode based on a third phase signal obtained from at least a portion of pixels in the first pixel group and a fourth phase signal obtained from at least a portion of pixels in the fifth pixel group.

8. The read circuit includes: In the first mode, a first color signal assigned to each of a plurality of pixels is received from a plurality of pixels included in the second pixel group to the fourth pixel group, and image data is output; 8. The image sensor of claim 7, wherein in the second mode, the image sensor receives second color signals assigned to each pixel group from the second pixel group through the fourth pixel group and outputs the image data.

9. the first pixel group includes a first pixel, a second pixel, a third pixel, and a fourth pixel; a first lens formed to correspond to the first pixel and the second pixel; a second lens formed to correspond to the third pixel and the fourth pixel, The read circuit includes: acquiring the first phase signal through at least a portion of the first lens, the first pixel, and the second pixel in the first mode; The image sensor of claim 7 , wherein the second phase signal is obtained through at least a portion of the second lens, the third pixel, and the fourth pixel.

10. a third lens and a fourth lens each formed to correspond to two pixels in the fifth pixel group; The read circuit includes: In a second mode, the third phase signal is obtained from the first lens or the second lens and at least some of the pixels in the first pixel group; 10. The image sensor of claim 9, wherein the fourth phase signal is obtained from the third lens or the fourth lens, and at least some of the pixels in the fifth pixel group.

Images