Photodetection device and electronic equipment

Abstract

To provide a photodetection device capable of improving characteristics for incident light.SOLUTION: A photodetection device includes an optical layer having a plurality of structures provided to be arranged side by side in a first direction, a plurality of first pixels each having a first photoelectric conversion element for receiving light of a first wavelength through the optical layer, and a plurality of second pixels each having a second photoelectric conversion element for receiving light of a second wavelength through the optical layer. The spacing between the first pixels is different from the spacing between the second pixels. The light reception area of the first photoelectric conversion element is different from the light reception area of the second photoelectric conversion element.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to light detection devices and electronic devices. [Background technology]

[0002] A device has been proposed that detects light and has a laminated film including an on-chip lens, a color filter layer, and a metamaterial layer, and a photoelectric conversion unit (Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2021-150615 A Summary of the Invention [Problem to be solved by the invention]

[0004] In a light detecting device, it is desirable to improve characteristics with respect to incident light.

[0005] It is desirable to provide a photodetector device that can improve characteristics with respect to incident light. [Means for solving the problem]

[0006] A photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures arranged in a first direction, a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The spacing between the first pixels is different from the spacing between the second pixels. The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. A photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures arranged in a first direction, a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The spacing between the first pixels is different from the spacing between the second pixels. The first pixels include a first light-shielding member provided between the optical layer and the first photoelectric conversion element and having a first opening through which light is incident. The second pixels include a second light-shielding member provided between the optical layer and the second photoelectric conversion element and having a second opening through which light is incident. The width of the first opening is different from the width of the second opening. A photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures arranged in a first direction, a first pixel each having a first lens and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first lens, and a second pixel each having a second lens and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second lens. The size of the first lens is different from the size of the second lens. A photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures arranged in a first direction, a first pixel having a first filter and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first filter, and a second pixel having a second filter and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second filter. The first filter and the second filter have different thicknesses or materials. An electronic device according to an embodiment of the present disclosure includes an optical system and a photodetector that receives light transmitted through the optical system. The photodetector includes an optical layer having a plurality of structures arranged in a first direction, a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The spacing between the first pixels is different from the spacing between the second pixels. The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a light detection device according to a first embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram for explaining an example of a circuit configuration of a pixel of the imaging device according to the first embodiment of the present disclosure. [Diagram 3] FIG. 3 is a diagram illustrating an example of a planar configuration of the imaging device according to the first embodiment of the present disclosure. [Figure 4] FIG. 4 is a diagram illustrating an example of a cross-sectional configuration of the imaging device according to the first embodiment of the present disclosure. [Figure 5A] FIG. 5A is a diagram for explaining an example of a planar configuration of a light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 5B] FIG. 5B is a diagram for explaining an example of a planar configuration of the light guiding section of the imaging device according to the first embodiment of the present disclosure. [Figure 6] FIG. 6 is a diagram for explaining a configuration example of an imaging device according to the first embodiment of the present disclosure. [Figure 7] FIG. 7 is a diagram for explaining a configuration example of an imaging device according to the first embodiment of the present disclosure. [Figure 8A] FIG. 8A is a diagram for explaining a configuration example of an imaging device according to the first embodiment of the present disclosure. [Figure 8B] FIG. 8B is a diagram for explaining a configuration example of the imaging device according to the first embodiment of the present disclosure. [Figure 8C] FIG. 8C is a diagram for explaining a configuration example of the imaging device according to the first embodiment of the present disclosure. [Figure 9] FIG. 9 is a diagram illustrating an example of quantum efficiency of a pixel of an imaging device according to a comparative example of the present disclosure. [Figure 10] FIG. 10 is a diagram illustrating an example of quantum efficiency of a pixel of the imaging device according to the first embodiment of the present disclosure. [Figure 11A] FIG. 11A is a diagram for explaining another configuration example of the photodetector according to the first embodiment of the present disclosure. [Figure 11B]FIG. 11B is a diagram for explaining another configuration example of the photodetector according to the first embodiment of the present disclosure. [Figure 11C] FIG. 11C is a diagram for explaining another configuration example of the photodetector according to the first embodiment of the present disclosure. [Figure 12] FIG. 12 is a diagram illustrating an example of a planar configuration of an imaging device according to the first modification of the present disclosure. [Figure 13] FIG. 13 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to Modification 1 of the present disclosure. [Figure 14] FIG. 14 is a diagram illustrating an example of quantum efficiency of a pixel of an imaging device according to a comparative example of the present disclosure. [Figure 15] FIG. 15 is a diagram illustrating an example of quantum efficiency of a pixel of an imaging device according to the first modification of the present disclosure. [Figure 16] FIG. 16 is a diagram illustrating an example of a planar configuration of an imaging device according to the second embodiment of the present disclosure. [Figure 17] FIG. 17 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the second embodiment of the present disclosure. [Figure 18] FIG. 18 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the second embodiment of the present disclosure. [Figure 19] FIG. 19 is a diagram for explaining another configuration example of the imaging device according to the second embodiment of the present disclosure. [Figure 20] FIG. 20 is a diagram illustrating an example of a planar configuration of an imaging device according to the third embodiment of the present disclosure. [Figure 21] FIG. 21 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the third embodiment of the present disclosure. [Figure 22] FIG. 22 is a diagram for explaining another configuration example of the imaging device according to the third embodiment of the present disclosure. In FIG. [Figure 23] FIG. 23 is a diagram illustrating an example of a cross-sectional configuration of an imaging device according to the fourth embodiment of the present disclosure. As shown in FIG. [Figure 24] FIG. 24 is a diagram for explaining another configuration example of the imaging device according to the fourth embodiment of the present disclosure. In FIG. [Diagram 25]FIG. 25 is a block diagram illustrating an example of the configuration of an electronic device having an imaging device. [Figure 26] FIG. 26 is a block diagram showing an example of a schematic configuration of a vehicle control system. [Figure 27] FIG. 27 is an explanatory diagram showing an example of the installation positions of the vehicle outside information detection unit and the imaging unit. [Figure 28] FIG. 28 is a diagram showing an example of a schematic configuration of an endoscopic surgery system. [Figure 29] FIG. 29 is a block diagram showing an example of a functional configuration of the camera head and the CCU. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be made in the following order. 1. First embodiment 2. Second embodiment 3. Third embodiment 4. Fourth embodiment 5. Application Examples 6. Application Examples

[0009] <1. First embodiment> 1 is a block diagram showing an example of a schematic configuration of an imaging device which is an example of a photodetection device according to a first embodiment of the present disclosure. The photodetection device is a device capable of detecting incident light. The imaging device 1 which is a photodetection device has a plurality of pixels P each having a photoelectric conversion unit (photoelectric conversion element) and is configured to perform photoelectric conversion of the incident light to generate a signal.

[0010] The imaging device 1 can generate a signal by receiving light transmitted through an optical system (not shown) including an optical lens. The imaging device 1 is configured, for example, using a semiconductor substrate (e.g., a silicon substrate) on which a plurality of pixels P are provided. The photoelectric conversion unit of each pixel P of the imaging device 1 is, for example, a photodiode (PD) and configured to be capable of photoelectrically converting light.

[0011] 1, the imaging device 1 has, as an imaging area, a region (pixel section 100) in which a plurality of pixels P are two-dimensionally arranged in a matrix. The pixel section 100 of the imaging device 1 is a pixel array in which a plurality of pixels P are arranged, and can also be called a light receiving region. The photoelectric conversion section of each pixel P can also be called a photoelectric conversion region.

[0012] The imaging device 1 captures incident light (image light) from a subject to be measured via an optical system including an optical lens. The imaging device 1 captures an image of the subject formed by the optical lens. The imaging device 1 can generate pixel signals by photoelectrically converting the received light (e.g., visible light, infrared light, etc.). The imaging device 1, which is a light detection device, is a device that can receive incident light and generate a signal, and can also be called a light receiving device.

[0013] The imaging device 1 (photodetection device) may be configured as an image sensor, for example. The imaging device 1 may be, for example, a complementary metal oxide semiconductor (CMOS) image sensor. The imaging device 1 may have a structure (layered structure) formed by stacking a plurality of semiconductor layers. The imaging device 1 may be used in various electronic devices such as digital still cameras, video cameras, and mobile phones.

[0014] [Schematic configuration of the imaging device] 1, the imaging device 1 includes a pixel unit 100, a pixel control unit 111, a signal processing unit 112, a control unit 113, and a processing unit 114. The imaging device 1 is also provided with, for example, a plurality of control lines Lread and a plurality of signal lines VSL. The control line Lread is a signal line capable of transmitting a signal for controlling the pixel P, and is connected to the pixel control unit 111 and the pixel P of the pixel unit 100.

[0015] 1, in the pixel section 100, a plurality of control lines Lread are wired for each pixel row composed of a plurality of pixels P arranged in the horizontal direction (row direction). The control lines Lread are configured to transmit control signals for reading out signals from the pixels P. The control lines Lread can also be considered as drive lines (pixel drive lines) that transmit signals for driving the pixels P.

[0016] The signal line VSL is a signal line capable of transmitting a signal from a pixel P, and is connected to the pixel P of the pixel unit 100 and the signal processing unit 112. In the pixel unit 100, for example, one or more signal lines VSL are wired for each pixel column composed of a plurality of pixels P arranged in the vertical direction (column direction). The signal line VSL is configured to be able to transmit a signal output from the pixel P. In the imaging device 1, multiple signal lines VSL may be provided for one pixel column. The imaging device 1 may have multiple signal lines VSL for each pixel column.

[0017] The pixel control unit 111 is configured to be able to control each pixel P of the pixel unit 100. The pixel control unit 111 is a control circuit and is configured by a plurality of circuits including, for example, a buffer, a shift register, an address decoder, etc. The pixel control unit 111 generates a signal for controlling the pixel P and outputs the signal to each pixel P of the pixel unit 100 via a control line Lread. The pixel control unit 111 is controlled by the control unit 113 and controls the pixel P of the pixel unit 100.

[0018] The pixel control unit 111 generates signals for controlling the pixels P, such as a signal for controlling the transfer transistor of the pixel P, a signal for controlling the selection transistor, and a signal for controlling the reset transistor, and supplies the signals to each pixel P via a control line Lread. The pixel control unit 111 can control reading out pixel signals from each pixel P. The pixel control unit 111 can also be called a pixel driving unit configured to be able to drive each pixel P. The pixel control unit 111 and the control unit 113 can also be called a pixel control unit together.

[0019] The signal processing unit 112 is configured to be able to execute signal processing of the input pixel signal. The signal processing unit 112 is a signal processing circuit, and has, for example, a load circuit, an AD (Analog Digital) conversion circuit, a horizontal selection switch, etc. As an example, the load circuit is configured by a current source capable of supplying a current to the amplification transistor of the pixel P. The load circuit, together with the amplification transistor of the pixel P, configures, for example, a source follower circuit.

[0020] The signal processing unit 112 may have an amplifier circuit configured to amplify a signal read from the pixel P via the signal line VSL. The load circuit, the amplifier circuit, the AD conversion circuit, etc. are provided for each of the multiple signal lines VSL, for example. A load circuit, an amplifier circuit, an AD conversion circuit, etc. may be provided for each pixel column of the pixel unit 100.

[0021] A signal output from each pixel P selected and scanned by the pixel control unit 111 is input to a signal processing unit 112 via a signal line VSL. The signal processing unit 112 can perform signal processing such as AD conversion of the signal of the pixel P and CDS (Correlated Double Sampling). The signal of each pixel P transmitted through each signal line VSL is subjected to signal processing by the signal processing unit 112 and output to a processing unit 114.

[0022] The processing unit 114 is configured to be able to perform signal processing on the input signal. The processing unit 114 is a processing circuit, and is configured, for example, by a circuit that performs various types of signal processing on pixel signals. The processing unit 114 may include a processor and a memory. The processing unit 114 performs signal processing on pixel signals input from the signal processing unit 112, and outputs the processed pixel signals. The processing unit 114 can perform various types of signal processing, for example, noise reduction processing, tone correction processing, etc.

[0023] The control unit 113 is configured to be able to control each unit of the imaging device 1. The control unit 113 receives an externally provided clock, data instructing an operation mode, and the like, and can also output data such as internal information of the imaging device 1. The control unit 113 is a control circuit, and has, for example, a timing generator configured to be able to generate various timing signals. The control unit 113 performs drive control of the pixel control unit 111, the signal processing unit 112, and the like, based on various timing signals (pulse signals, clock signals, and the like) generated by the timing generator.

[0024] The pixel section 100, the pixel control section 111, the signal processing section 112, and the like described above may be provided on one substrate. The pixel control section 111, the signal processing section 112, the control section 113, the processing section 114, and the like may be provided on one semiconductor substrate, or may be provided separately on multiple semiconductor substrates. The imaging device 1 may have a layered structure formed by stacking multiple substrates. Some or all of the signal processing section 112, the control section 113, and the processing section 114 may be integrally configured.

[0025] [Pixel configuration] 2 is a diagram for explaining an example of a circuit configuration of a pixel of the imaging device according to the first embodiment. The pixel P has a photoelectric conversion unit 12 (photoelectric conversion element) and a readout circuit 20. The photoelectric conversion unit 12 is configured to receive light and generate a signal. The readout circuit 20 is configured to be capable of outputting a signal based on charges photoelectrically converted. The readout circuit 20 can read out a pixel signal based on the charges photoelectrically converted by the photoelectric conversion unit 12.

[0026] The photoelectric conversion unit 12 is a light receiving unit (light receiving element) and is configured to be able to generate electric charges by photoelectric conversion. In the example shown in Fig. 2, the photoelectric conversion unit 12 is a photodiode (PD) and converts incident light into electric charges. The photoelectric conversion unit 12 can perform photoelectric conversion to generate electric charges according to the amount of received light.

[0027] The read circuit 20 includes, for example, a transistor TRG, a floating diffusion FD, a transistor AMP, a transistor SEL, and a transistor RST. The transistors TRG, AMP, SEL, and RST are each a MOS transistor (MOSFET) having a gate, a source, and a drain terminal.

[0028] 2, the transistors TRG, AMP, SEL, and RST are each configured as an NMOS transistor. The transistors of the pixel P may be configured as PMOS transistors.

[0029] The transistor TRG is a transfer transistor and is configured to be able to transfer charges photoelectrically converted by the photoelectric conversion unit 12 to the floating diffusion FD. The transistor TRG is controlled by a signal STRG to electrically connect or disconnect the photoelectric conversion unit 12 and the floating diffusion FD. The transistor TRG can transfer charges photoelectrically converted and stored in the photoelectric conversion unit 12 to the floating diffusion FD.

[0030] The floating diffusion FD is an accumulation unit and is configured to be able to accumulate the transferred electric charge. The floating diffusion FD can accumulate the electric charge photoelectrically converted by the photoelectric conversion unit 12. The floating diffusion FD can also be said to be a retention unit capable of retaining the transferred electric charge. The floating diffusion FD accumulates the transferred electric charge and converts it into a voltage according to the capacity of the floating diffusion FD.

[0031] The transistor AMP is configured to generate and output a signal based on the charge accumulated in the floating diffusion FD. The transistor AMP is an amplifying transistor, and can generate and output a signal based on the charge converted by the photoelectric conversion unit 12.

[0032] The gate of the transistor AMP is electrically connected to the floating diffusion FD, and the voltage converted by the floating diffusion FD is input to the gate of the transistor AMP. In the example shown in Figure 2, the drain of the transistor AMP is connected to a power supply line through which a power supply voltage VDD is supplied.

[0033] The source of the transistor AMP is connected to the signal line VSL via the transistor SEL. The transistor AMP is configured to generate a signal based on the charge stored in the floating diffusion FD, i.e., a signal based on the voltage of the floating diffusion FD, and output the signal to the signal line VSL.

[0034] The transistor SEL is configured to be capable of controlling the output of a pixel signal. The transistor SEL is electrically connected in series with the transistor AMP, for example, as shown in the example of FIG. 2. The transistor SEL is controlled by a signal SSEL and configured to be capable of outputting a signal from the transistor AMP to a signal line VSL. The transistor SEL is a selection transistor and can control the output timing of the pixel signal.

[0035] The transistor SEL is configured to be capable of outputting a signal based on the charge converted by the photoelectric conversion unit 12. The transistor SEL can output a pixel signal of the pixel P to a signal line VSL. The transistor SEL may be electrically connected in series between the transistor AMP and a power line to which a power supply voltage VDD is applied. Furthermore, the transistor SEL may be omitted as necessary.

[0036] The transistor RST is configured to be able to reset the voltage of the floating diffusion FD. In the example shown in Fig. 2, the transistor RST is electrically connected to a power supply line to which a power supply voltage VDD is applied, and is configured to reset the charge of the pixel P. The transistor RST is a reset transistor.

[0037] The transistor RST is controlled by a signal SRST, and can reset the charge accumulated in the floating diffusion FD and reset the voltage of the floating diffusion FD. In the example shown in Fig. 2, the transistor RST electrically connects the power supply line and the floating diffusion FD and can discharge the charge accumulated in the floating diffusion FD. The transistor RST can discharge the charge accumulated in the photoelectric conversion unit 12 via the transistor TRG.

[0038] The pixel control unit 111 (see FIG. 1) of the imaging device 1 supplies control signals to the gates of the transistors TRG, SEL, RST, etc. of each pixel P via the control line Lread described above, turning the transistors on (conducting) or off (non-conducting).

[0039] The multiple control lines Lread for each pixel row of the imaging device 1 include, for example, a wiring for transmitting a signal STRG that controls the transistor TRG, a wiring for transmitting a signal SSEL that controls the transistor SEL, and a wiring for transmitting a signal SRST that controls the transistor RST.

[0040] The readout circuit 20 may be configured to change the conversion efficiency (gain) when converting the charge into a voltage. For example, the readout circuit 20 may have a switching transistor used to set the conversion efficiency. As an example, the switching transistor is electrically connected between the floating diffusion FD and the transistor RST.

[0041] In the readout circuit 20, when the switching transistor is turned on, the capacitance added to the floating diffusion FD of the pixel P increases, and the conversion efficiency is switched. The switching transistor can change the capacitance connected to the gate of the transistor AMP to change the conversion efficiency.

[0042] The transistors TRG, SEL, RST, and switching transistors are controlled to be turned on and off by a pixel control unit 111. The pixel control unit 111 controls the readout circuit 20 of each pixel P to output a pixel signal from each pixel P to a signal line VSL. The pixel control unit 111 can control the reading out of the pixel signal of each pixel P to the signal line VSL.

[0043] [Configuration of imaging device] Fig. 3 is a diagram showing an example of a planar configuration of an imaging device according to a first embodiment. Fig. 3 shows an example of an arrangement of pixels P of a pixel section 100 in the imaging device 1. The pixel section 100 of the imaging device 1 is provided with a plurality of types of pixels (e.g., R pixels, G pixels, and B pixels). Each pixel P has a photoelectric conversion section 12. As will be described later, the imaging device 1 has an optical layer (metasurface layer) formed using a plurality of structures.

[0044] As shown in Fig. 3, the incident direction of light from the subject is the Z-axis direction, the left-right direction on the paper perpendicular to the Z-axis direction is the X-axis direction, and the up-down direction on the paper perpendicular to the Z-axis and X-axis directions is the Y-axis direction. In the following figures, directions may be indicated based on the direction of the arrow in Fig. 3.

[0045] The multiple pixels P provided in the pixel section 100 of the imaging device 1 include, as an example, a pixel Pr (R pixel) having a photoelectric conversion unit 12 that receives red (R) light, a pixel Pg (G pixel) having a photoelectric conversion unit 12 that receives green (G) light, and a pixel Pb (B pixel) having a photoelectric conversion unit 12 that receives blue (B) light.

[0046] The photoelectric conversion unit 12 of pixel Pr receives and photoelectrically converts light mainly in the red wavelength range from the light from the subject to be measured. The photoelectric conversion unit 12 of pixel Pg receives and photoelectrically converts light mainly in the green wavelength range from the light from the subject. The photoelectric conversion unit 12 of pixel Pb receives and photoelectrically converts light mainly in the blue wavelength range. In the pixel unit 100, a plurality of pixels Pr, a plurality of pixels Pg, and a plurality of pixels Pb are repeatedly arranged. The pixels Pr, Pg, and Pb are arranged according to a Bayer array (i.e., an RGGB array), as an example.

[0047] In the pixel section 100, 2×2 pixels each including one pixel Pr, two pixels Pg, and one pixel Pb are repeatedly arranged. As shown in Fig. 3, the pixel section 100 may have a pixel row in which the pixels Pr and Pg are alternately arranged, and a pixel row in which the pixels Pg and Pb are alternately arranged.

[0048] In the pixel unit 100, a plurality of pixels Pr are arranged so as to be aligned in the horizontal direction (X direction) and the vertical direction (Y direction). A plurality of pixels Pb are also arranged so as to be aligned in the horizontal direction and the vertical direction. A plurality of pixels Pg are also arranged so as to be aligned in the diagonal direction. The number (density) of pixels Pg is greater than the number (density) of pixels Pr (or pixels Pb).

[0049] In the imaging device 1, the pixels P of each color are arranged at different intervals, for example, as shown in the example of Fig. 3. The interval between the pixels Pg is different from the interval between the pixels Pr (or the interval between the pixels Pb). The interval (distance) between pixels of the same color is different between each pixel Pg and each pixel Pr (or each pixel Pb) of the pixel unit 100. For example, the interval between the two nearest pixels Pg is different from the interval between the two nearest pixels Pr.

[0050] 3, the interval (distance) between the pixels Pg is smaller than the interval between the pixels Pr. Also, the interval between the pixels Pg is smaller than the interval between the pixels Pb. For example, the interval between the pixels Pg adjacent in the diagonal direction is shorter than the interval between the pixels Pr (or the interval between the pixels Pb) arranged in the X-axis direction (or the Y-axis direction).

[0051] The pixels Pr, Pg, and Pb can generate an R component pixel signal, a G component pixel signal, and a B component pixel signal, respectively. The imaging device 1 can obtain RGB pixel signals. The arrangement of the pixels P is not limited to the above example, and can be changed as appropriate.

[0052] The pixels P provided in the pixel section 100 may include pixels that receive and photoelectrically convert Cy (cyan) light, pixels that receive and photoelectrically convert Ye (yellow) light, and pixels that receive and photoelectrically convert Mg (magenta) light. C (Clear) pixels that receive W (white) light, that is, light in the entire wavelength range of the incident light, may also be provided. Pixels that receive infrared light (IR pixels) may also be provided.

[0053] In the imaging device 1, various pixels P are configured to have different sizes or structures. For example, the imaging device 1 is configured so that the light receiving area of ​​the photoelectric conversion unit 12 (photodiode) differs for each color pixel P. As one example, the area where the photoelectric conversion unit 12 of pixel Pg receives light is different from the area where the photoelectric conversion unit 12 of pixel Pr (or pixel Pb) receives light.

[0054] The pixel Pg is configured, for example, so that the photoelectric conversion unit 12 of the pixel Pg has a light receiving area larger than the light receiving area of ​​the photoelectric conversion unit 12 of the pixel Pr. The pixel Pg can also be configured so that the photoelectric conversion unit 12 of the pixel Pg has a light receiving area larger than the light receiving area of ​​the photoelectric conversion unit 12 of the pixel Pb. The pixel Pg is larger than the size of the pixel Pr (or pixel Pb), for example.

[0055] 3, the size of the photoelectric conversion unit 12 of pixel Pg is larger than the size of the photoelectric conversion unit 12 of pixel Pr, and the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pg is larger than the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pr. The width in the X-axis direction (or Y-axis direction) of the photoelectric conversion unit 12 of pixel Pg is larger than the width of the photoelectric conversion unit 12 of pixel Pr.

[0056] 3, the size of the photoelectric conversion unit 12 of pixel Pg is larger than the size of the photoelectric conversion unit 12 of pixel Pb, and the light receiving area of ​​the photoelectric conversion unit 12 in pixel Pg is larger than the light receiving area of ​​the photoelectric conversion unit 12 in pixel Pb. The width in the X-axis direction (or Y-axis direction) of the photoelectric conversion unit 12 of pixel Pg is larger than the width of the photoelectric conversion unit 12 of pixel Pb.

[0057] The light receiving area of ​​the photoelectric conversion unit 12 of pixel Pg may be, for example, 1.5 times the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pr (or pixel Pb). The ratio of the light receiving areas of the photoelectric conversion units 12 of pixels Pr, Pg, and Pb is, for example, 1:1.5:1. Furthermore, for example, the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pg may be 1.4 or 1.6 times the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pr (or pixel Pb).

[0058] Fig. 4 is a diagram showing an example of a cross-sectional configuration of the imaging device according to the first embodiment. As shown in Fig. 4, the imaging device 1 has, for example, an optical layer 70, an insulating layer 80, a semiconductor layer 10, and a multi-layer wiring layer 90. The imaging device 1 has a configuration in which the optical layer 70, the insulating layer 80, the semiconductor layer 10, and the multi-layer wiring layer 90 are stacked in the Z-axis direction. From the light incident side, the optical layer 70, the insulating layer 80, the semiconductor layer 10, and the multi-layer wiring layer 90 are provided.

[0059] The optical layer 70 has a plurality of structures 51, and is configured to guide incident light to the photoelectric conversion unit 12 side. The optical layer 70 is a layer in which the structures 51, which are nanostructures, are provided. In the example shown in Fig. 4, the optical layer 70 including the plurality of structures 51 is laminated on an insulating layer 80. The optical layer 70 is an optical element that utilizes metamaterial (metasurface) technology, and can be called a metasurface layer (or metamaterial layer).

[0060] The optical layer 70 has a plurality of structures 51 and a filling member 55 provided around the structures 51. The structures 51 of the optical layer 70 have, for example, a columnar (pillar) shape. The structures 51 and the filling member 55 are made of materials having refractive indices different from each other. The optical layer 70 may have a light guide section 60 (light guide member) including the plurality of structures 51 and the filling member 55 for each pixel P or for each plurality of pixels P (i.e., for each predetermined number of pixels P) as in the example shown in FIG. 4.

[0061] 4, the semiconductor layer 10 has a surface 11S1 and a surface 11S2 that face each other. The surface 11S2 is the surface opposite to the surface 11S1. The surface 11S1 of the semiconductor layer 10 is a light receiving surface (light incident surface). The surface 11S2 of the semiconductor layer 10 is an element formation surface on which elements such as transistors are formed. A gate electrode, a gate insulating film (e.g., a gate oxide film), etc. are provided on the surface 11S2 of the semiconductor layer 10.

[0062] The semiconductor layer 10 is composed of a semiconductor substrate, for example, a Si (silicon) substrate. The semiconductor layer 10 may be an SOI (silicon on insulator) substrate, a SiGe (silicon germanium) substrate, a SiC (silicon carbide) substrate, or the like. The semiconductor layer 10 may be composed of a III-V group compound semiconductor material, or may be formed using other semiconductor materials.

[0063] 4, an insulating layer 80, an optical layer 70, etc. are provided on the surface 11S1 side of the semiconductor layer 10. The optical layer 70 and the insulating layer 80 are stacked on the semiconductor layer 10 in a thickness direction perpendicular to the surface 11S1 of the semiconductor layer 10. A multilayer wiring layer 90 is provided on the surface 11S2 side of the semiconductor layer 10. The optical layer 70 including the structures 51 is provided on the side where light from the optical system is incident, and the multilayer wiring layer 90 is provided on the side opposite to the side where the light is incident. The imaging device 1 is a so-called back-illuminated imaging device.

[0064] In the semiconductor layer 10, a plurality of photoelectric conversion units 12 (photoelectric conversion elements) are provided along a surface 11S1 and a surface 11S2 of the semiconductor layer 10. For example, a plurality of photoelectric conversion units 12 are embedded and formed in the semiconductor layer 10. The photoelectric conversion units 12 are provided between the surface 11S1 and the surface 11S2 of the semiconductor layer 10. The photoelectric conversion units 12 photoelectrically convert light incident through the optical layer 70 and the insulating layer 80. The photoelectric conversion units 12 can also be referred to as a photoelectric conversion layer.

[0065] The multi-layer wiring layer 90 is provided by being laminated on the semiconductor layer 10. The multi-layer wiring layer 90 includes, for example, a conductor film and an insulating film, and has a plurality of wirings and vias (VIA), etc. The multi-layer wiring layer 90 has a configuration in which a plurality of wirings are laminated via an insulating film serving as an interlayer insulating film (interlayer insulating layer). The multi-layer wiring layer 90 includes, for example, two or more layers of wirings, or three or more layers of wirings.

[0066] The wiring of the multi-layer wiring layer 90 is formed using a metal material such as aluminum (Al), copper (Cu), or tungsten (W). The wiring of the multi-layer wiring layer 90 may be formed using polysilicon (Poly-Si) or other conductive materials. The interlayer insulating film is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiON), or the like.

[0067] The semiconductor layer 10 and the multilayer wiring layer 90 are provided with the above-mentioned readout circuit 20 (see FIG. 2), for example, for each pixel P or for each set of multiple pixels P. The above-mentioned pixel control unit 111, signal processing unit 112, control unit 113, processing unit 114, and the like (see FIG. 1) may be provided on a substrate separate from the semiconductor layer 10, or in the semiconductor layer 10 and the multilayer wiring layer 90.

[0068] The insulating layer 80 is provided between the optical layer 70, in which the light guiding section 60 is provided, and the semiconductor layer 10. The insulating layer 80 is a spacer layer. In the example shown in Fig. 4, the insulating layer 80 is formed so as to be laminated on the semiconductor layer 10. The insulating layer 80 is formed using an insulating film, such as an oxide film, a nitride film, or an oxynitride film, for example.

[0069] The insulating layer 80 is formed using an insulating material such as silicon oxide (SiO), silicon nitride (SiN), or aluminum oxide (AlO). The insulating layer 80 may be made of a material with a low refractive index such as silicon oxide, or may be made of other materials that transmit light in the wavelength range to be measured. The insulating layer 80 may also be called a planarizing layer (planarizing film). The optical layer 70 may be configured to include the insulating layer 80.

[0070] As shown in Fig. 4, the imaging device 1 has a separator 30. The separator 30 is provided between adjacent photoelectric conversion units 12 to separate the photoelectric conversion units 12. At least a portion of the separator 30 is provided at the boundary between adjacent pixels P (or photoelectric conversion units 12). The separator 30 is formed using, for example, a trench (groove portion).

[0071] The separation portion 30 may be formed in the semiconductor layer 10 so as to surround the photoelectric conversion portion 12 of each pixel P. The separation portion 30 may be provided so as to penetrate the semiconductor layer 10. That is, the separation portion 30 may be formed so as to reach the surface 11S2 of the semiconductor layer 10. The separation portion 30 may also be referred to as a pixel separation portion or a pixel separation wall.

[0072] An insulating film, such as a silicon oxide film, a silicon nitride film, an aluminum oxide film, or the like, is provided in the trench of the isolation unit 30. Polysilicon, a metal material, other insulating materials, or the like may be embedded in the trench of the isolation unit 30. The isolation unit 30 may be configured of a semiconductor region (a p-type semiconductor region or an n-type semiconductor region) formed by ion implantation.

[0073] The separation section 30 may be formed using other insulating materials having a low refractive index. A gap (cavity) may be provided in the trench of the separation section 30. In the imaging device 1, the separation section 30 is provided to suppress leakage of electric charges photoelectrically converted in the photoelectric conversion section 12 of the pixel P to the surrounding pixels P (or the photoelectric conversion section 12). In addition, leakage of unnecessary light to the surrounding pixels P can be suppressed, and for example, color mixing can be suppressed.

[0074] 3 and 4, the imaging device 1 is provided with a light blocking member 40. The imaging device 1 has a light blocking member 40 provided with a plurality of openings 45. The openings 45 are openings (holes) through which light from the optical layer 70 enters. In the example shown in FIGS. 3 and 4, it can be said that the light blocking member 40 having one opening 45 is disposed above the photoelectric conversion unit 12 for each pixel P.

[0075] The light shielding member 40 is a light shielding portion (light shielding film) made of a material that blocks light, and is provided on the surface 11S1 side of the semiconductor layer 10. In the example shown in FIG. 4, the light shielding member 40 is provided in the insulating layer 80, and is located on the surface 11S1 of the semiconductor layer 10. The light shielding member 40 is provided, for example, around the photoelectric conversion unit 12 in the insulating layer 80. It can also be said that the light shielding member 40 is disposed by replacing a part of the insulating layer 80. The insulating layer 80 is formed so as to cover the light shielding member 40, and is provided so as to fill the opening 45.

[0076] 3, the opening 45 of the light blocking member 40 may have a quadrilateral or polygonal shape in plan view. In the pixels Pr and Pb, the opening 45 of the light blocking member 40 each has a quadrilateral (e.g., square) shape. The opening 45 of the pixel Pg has an octagonal shape, for example. The shape of the opening 45 in each pixel P can be changed as appropriate, and may be a hexagon, an ellipse, or another shape.

[0077] The photoelectric conversion unit 12 of the pixel P receives light from the optical layer 70 through the opening 45. The photoelectric conversion unit 12 receives light incident from the optical layer 70 through the opening 45 and can generate electric charges by photoelectric conversion. In the imaging device 1, the light blocking member 40 is provided to prevent light from leaking to the surrounding pixels P. Unnecessary light is prevented from leaking to the surroundings, and color mixing can be prevented.

[0078] The imaging device 1 may have at least one of a fixed charge film and an antireflection film on the surface 11S1 side of the semiconductor layer 10. As an example, the fixed charge film and the antireflection film are made of a metal compound (metal oxide, metal nitride, etc.) and can also be called a metal compound layer.

[0079] The fixed charge film and the anti-reflection film are provided, for example, between the semiconductor layer 10 and the insulating layer 80. The fixed charge film is a film having a fixed charge and can be formed using a high dielectric material. As an example, the fixed charge film is made of a metal oxide such as hafnium oxide or aluminum oxide. The fixed charge film is, for example, a film having a negative fixed charge.

[0080] In the imaging device 1, the fixed charge film is provided to suppress the generation of dark current at the interface of the semiconductor layer 10. The fixed charge film may be formed of another metal oxide film, or may be formed using a metal nitride film or a metal oxynitride film. A film having a positive fixed charge may be provided as the fixed charge film.

[0081] The anti-reflection film is, for example, made of a metal oxide such as hafnium oxide or tantalum oxide. The anti-reflection film is provided on the surface 11S1 side of the semiconductor layer 10 to reduce (suppress) reflection. The anti-reflection film is provided so as to be laminated with the fixed charge film, for example.

[0082] The anti-reflection film may be made of an insulating material such as silicon nitride (SiN), silicon oxide (SiO), aluminum oxide (AlO), or other materials. The insulating layer 80 may be made of at least one of a fixed charge film and an anti-reflection film.

[0083] The optical layer 70 of the imaging device 1 is provided above the photoelectric conversion unit 12, for example, as in the example shown in Fig. 4. Light from a subject that is a measurement target is incident on the optical layer 70. For example, light that has passed through an optical system such as an imaging lens is incident on the multiple structures 51 of the optical layer 70. The structures 51 are structures whose size is equal to or smaller than a predetermined wavelength of the incident light.

[0084] The optical layer 70 (or the light guide section 60) has a plurality of structures 51 that are nanostructures, and is configured to guide light from a measurement target to the photoelectric conversion section 12. The structures 51 have, for example, a size equal to or smaller than the wavelength range of light to be measured. The structures 51 may have a size equal to or smaller than the wavelength range of visible light, or may have a size equal to or smaller than the wavelength range of infrared light.

[0085] The structures 51 are, for example, columnar (pillar-shaped) structures. As an example, the structures 51 have a cylindrical shape. The multiple structures 51 of the optical layer 70 are arranged side by side in the left-right direction (X-axis direction) of the paper with a part of the filling member 55 in between. The shape of the structures 51 can be changed as appropriate, and may be a circle or a rectangle in a plan view. The shape of the structures 51 may be a polygon, an ellipse, a cross, or another shape.

[0086] The optical layer 70 has a filling member 55 provided around the structures 51. The filling member 55 is provided in the optical layer 70 so as to fill the periphery of the structures 51. For example, the filling member 55 is formed on the insulating layer 80 so as to fill the spaces between adjacent structures 51. The filling member 55 can also be referred to as a protective member (protective layer).

[0087] The filling member 55 may be formed so as to cover the structures 51. For example, the filling member 55 may be formed so as to cover the entirety of the plurality of structures 51. It can also be said that the structures 51 are provided within the filling member 55 and are disposed so as to replace a part of the filling member 55.

[0088] The optical layer 70 utilizes the structures 51, which are nanostructures, to propagate light toward the photoelectric conversion unit 12. The structures 51 are also called meta-atoms, nano-atoms, metasurface structures, microstructures, etc. The structures 51 are, for example, pillars (columnar members) and can also be called nano-pillars. The optical layer 70 can be called an optical element (optical member) that guides (propagates) light.

[0089] The optical layer 70 is configured, for example, as a spectroscopic layer that splits light. The optical layer 70 is configured, for example, to give a phase delay to incident light and guide the light. In the optical layer 70, a plurality of structures 51 are arranged so as to give a desired phase profile to the incident light. As an example, the plurality of structures 51 are arranged so as to be aligned in the X-axis direction and the Y-axis direction in a plan view, as in the example shown in FIG. 5A or FIG. 5B.

[0090] In each pixel P of the imaging device 1, a plurality of structures 51 may be arranged at intervals equal to or less than a predetermined wavelength of incident light. As an example, the plurality of structures 51 are provided at intervals equal to or less than the wavelength range of visible light in the X-axis direction and the Y-axis direction. Note that in the pixel P, the plurality of structures 51 may be arranged at intervals equal to or less than the wavelength range of infrared light.

[0091] The structures 51 of the optical layer 70 have a refractive index different from that of the adjacent medium. In the example shown in FIG. 4 etc., the structures 51 have a refractive index different from that of the filling member 55. The structures 51 have a refractive index different from that of the medium layer formed around the structures 51, i.e., the filling member 55. The filling member 55 can also be said to be a material layer having a refractive index different from that of the structures 51.

[0092] The structures 51 of the optical layer 70 have, for example, a refractive index higher than that of the filling member 55. The structures 51 can be made of a material having a refractive index higher than that of the filling member 55. The structures 51 are made of, for example, titanium oxide (TiO). The structures 51 may be made of silicon, polysilicon (Poly-Si), amorphous silicon (a-Si), germanium (Ge), or the like.

[0093] The structure 51 may be made of a simple substance, an oxide, a nitride, an oxynitride, or a composite of titanium (Ti), hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), indium (In), niobium (Nb), etc. The structure 51 may be made of other metal compounds (metal oxides, metal nitrides, etc.).

[0094] The structures 51 of the optical layer 70 may have a refractive index lower than that of the filling member 55. The structures 51 may be made of a material having a refractive index lower than that of the filling member 55. For example, the structures 51 may be made of magnesium fluoride (MgF).

[0095] The structure 51 may be formed using silicon oxide, silicon nitride, silicon nitride oxide, silicon carbide, silicon oxide carbide, or other silicon compounds. The structure 51 may also be configured using an organic material. The structure 51 may also be configured using a siloxane-based resin, a styrene-based resin, an acrylic-based resin, or the like. The structure 51 may also be formed using beads (filler).

[0096] The filling member 55 is, for example, made of an inorganic material such as an oxide, a nitride, or an oxynitride. The filling member 55 may be made of, for example, silicon oxide, silicon nitride, silicon oxynitride, or silicon carbide. Note that the filling member 55 and a part or the whole of the insulating layer 80 may be integrally formed. The filling member 55 may be made of an organic material.

[0097] The filling member 55 may be made of a siloxane-based resin, a styrene-based resin, an acrylic-based resin, or the like. The filling member 55 may be made of any of these resins containing fluorine. The filling member 55 may be formed of any of these resins filled with beads having a refractive index higher (or lower) than that of the resin.

[0098] The materials of the structure 51 and the filling member 55 can be selected depending on the refractive index difference with the surrounding medium, the wavelength range of the incident light to be measured, and the like. The structure 51 and the filling member 55 may be made of an inorganic material or an organic material. The structure 51 or the filling member 55 may be made of a void (cavity). For example, the filling member 55 may be made to include air (void).

[0099] The optical layer 70 can control the wavefront of light by, for example, causing a phase delay in the incident light due to a refractive index difference between the structures 51 and the surrounding medium. The optical layer 70 can adjust the propagation direction of light by, for example, imparting a phase delay to the incident light by the structures 51 and the filling member 55 around the structures 51.

[0100] The materials (optical constants of each material) of the structures 51 and the filling member 55, the size (width (diameter), height, etc.) of the structures 51, the pitch (disposition interval), etc. of the structures 51 are determined so that light of a desired wavelength range among the incident light from the measurement target travels in a desired direction. For example, the material (refractive index), dimensions, pitch, and material (refractive index) of the structures 51 and the filling member 55 can be set.

[0101] The optical layer 70 (or the light guide section 60) is configured, for example, as a spectroscopic section (spectroscopic element) capable of separating incident light. The optical layer 70 (or the light guide section 60) can also be called a splitter (color splitter). The optical layer 70 can also be called a color splitter layer or a wavelength separation layer. The optical layer 70 (or the light guide section 60) can also be called an optical element configured to redirect light.

[0102] The optical layer 70 can adjust the propagation direction of light by, for example, imparting different amounts of phase delay according to the wavelength of light, and can separate the incident light into light of each wavelength range. The propagation direction of light of each wavelength by the optical layer 70 can be adjusted by the material (refractive index), width, height, arrangement position (pitch), etc. of the structures 51.

[0103] As an example, in the imaging device 1, the material, size, arrangement number, etc. of the structures 51 are determined so that light in a specific wavelength band to be detected branches off and travels to the photoelectric conversion unit 12 of the desired pixel P. For example, the size, arrangement interval, etc. of the structures 51 in the pixel P of each color are set to obtain a desired light collection range for each pixel P of each color. For example, the structures 51 of the light guide units 60 of the pixels Pr, Pg, and Pb may be formed so as to have different sizes (e.g., width, height), arrangement positions, etc.

[0104] The optical layer 70 may have an antireflection film 65 and a stopper film 66, as in the example shown in Fig. 4. The antireflection film 65 (antireflection film) is provided, for example, on the light-incident side of the structures 51. As an example, as shown in Fig. 4, the antireflection film 65 is provided so as to cover the multiple structures 51, and reduces (suppresses) reflection.

[0105] The stopper film 66 is provided, for example, between the structure 51 and the insulating layer 80. The stopper film 66 serves as an etching stopper film (stopper layer) during the manufacture of the imaging device 1. By providing the stopper film 66, it is possible to improve the processing controllability of the structure 51. The stopper film 66 can also function as an anti-reflection film (anti-reflection film).

[0106] In the imaging device 1, each pixel P is configured to have a different size or structure depending on, for example, the distance between pixels of the same color and the optical characteristics of the optical layer 70. For example, the imaging device 1 is configured such that the photoelectric conversion unit 12 of pixel Pg and the photoelectric conversion unit 12 of pixel Pr (or pixel Pb) have different light receiving areas, as in the example shown in Figures 3 and 4.

[0107] 3 and 4, in the imaging device 1, the size (width, area, etc.) of the photoelectric conversion unit 12 of the pixel Pg may be larger than the size of the photoelectric conversion unit 12 of the pixel Pr. Also, the size of the photoelectric conversion unit 12 of the pixel Pg may be larger than the size of the photoelectric conversion unit 12 of the pixel Pb.

[0108] 3 and 4, the width in the X-axis direction of the photoelectric conversion unit 12 of pixel Pg is larger than the width of the photoelectric conversion unit 12 of pixel Pr (or pixel Pb). The light receiving area of ​​the photoelectric conversion unit 12 of pixel Pg is larger than the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pr (or pixel Pb).

[0109] The optical layer 70 of the imaging device 1 imparts different phase delays to light in a plurality of wavelength ranges, for example, light in a first wavelength range to a third wavelength range. In the imaging device 1, it is possible to separate light incident on the optical layer 70 into light in the first wavelength range, light in the second wavelength range, and light in the third wavelength range.

[0110] The light guide section 60 of the optical layer 70 may be configured to separate the incident light into light of a first wavelength range, light of a second wavelength range, and light of a third wavelength range. As an example, the imaging device 1 may use the optical layer 70 to adjust the traveling directions of each of the first to third wavelength lights, that is, blue light, green light, and red light.

[0111] 6 and 7 are diagrams for explaining a configuration example of an imaging device according to a first embodiment. In FIG. 6, similar to FIG. 4, pixel Pb, which is a B pixel, and pixel Pg, which is a G pixel, are illustrated. In FIG. 7, pixel Pg, which is a G pixel, and pixel Pr, which is an R pixel, are illustrated. In addition, in FIG. 6 and FIG. 7, dashed arrow Lb typically represents blue light. Solid arrow Lg typically represents green light, and dashed arrow Lr typically represents red light.

[0112] The light guiding section 60 of the pixel Pb is configured to be able to propagate, of the incident light, blue (B) light to the photoelectric conversion section 12 of the pixel Pb and green (G) light to the photoelectric conversion section 12 of the pixel Pg. The light guiding section 60 of the pixel Pb is also configured to propagate, of the incident light, red (R) light to the photoelectric conversion section 12 of the pixel Pr. The light guiding section 60 of the pixel Pb splits the incident light, and guides, of the incident light, light in the green wavelength region toward the pixel Pg and light in the red wavelength region toward the pixel Pr.

[0113] The light guiding section 60 of the pixel Pg is configured to be able to propagate, of the incident light, green (G) light to the photoelectric conversion section 12 of the pixel Pg and blue (B) light to the photoelectric conversion section 12 of the pixel Pb. The light guiding section 60 of the pixel Pg is also configured to propagate, of the incident light, red (R) light to the photoelectric conversion section 12 of the pixel Pr. The light guiding section 60 of the pixel Pg splits the incident light, and guides, of the incident light, light in the blue wavelength region toward the pixel Pb and light in the red wavelength region toward the pixel Pr.

[0114] The light guiding section 60 of the pixel Pr is configured to be able to propagate, of the incident light, red (R) light to the photoelectric conversion section 12 of the pixel Pr and green (G) light to the photoelectric conversion section 12 of the pixel Pg. The light guiding section 60 of the pixel Pr is also configured to propagate, of the incident light, blue (B) light to the photoelectric conversion section 12 of the pixel Pb. The light guiding section 60 of the pixel Pr splits the incident light, and guides, of the incident light, light in the green wavelength region toward the pixel Pg and light in the blue wavelength region toward the pixel Pb.

[0115] In this way, as shown by the arrows in Fig. 8A, the pixels surrounding pixel Pb guide the blue wavelength light of the incident light toward pixel Pb. The blue light incident on pixel Pb and the blue light incident on each of the pixels surrounding pixel Pb can be concentrated on photoelectric conversion unit 12 of pixel Pb. Photoelectric conversion unit 12 of pixel Pb can efficiently receive light in the blue wavelength range and perform photoelectric conversion, thereby generating electric charges according to the amount of received light.

[0116] As shown by arrows in Fig. 8B, the pixels surrounding pixel Pg guide the green wavelength light of the incident light toward pixel Pg. The green light incident on pixel Pg and the green light incident on each of the pixels surrounding pixel Pg can be concentrated on photoelectric conversion unit 12 of pixel Pg. Photoelectric conversion unit 12 of pixel Pg can efficiently receive light in the green wavelength range and perform photoelectric conversion, thereby generating electric charges according to the amount of received light.

[0117] 8C, the pixels surrounding pixel Pr guide light of red wavelengths among the incident light toward pixel Pr. The red light incident on pixel Pr and the red light incident on each of the pixels surrounding pixel Pr can be collected into photoelectric conversion unit 12 of pixel Pr. The photoelectric conversion unit 12 of pixel Pr can efficiently receive light in the red wavelength range, perform photoelectric conversion, and generate electric charges according to the amount of received light.

[0118] In this way, in the imaging device 1, light to be detected can be collected within pixel P from pixels surrounding pixel P. Light can be collected from an area larger than the size of one pixel, and the amount of light received by the photoelectric conversion unit 12 of pixel P can be increased. Light can be efficiently guided to the photoelectric conversion unit 12, and quantum efficiency (QE) can be improved. It is possible to improve sensitivity to incident light.

[0119] As described above, light from a subject to be measured is incident on each pixel P of the imaging device 1 through the optical layer 70. Each pixel P can receive the light incident through the structures 51 of the light guiding section 60 and generate a pixel signal. The imaging device 1 can generate image data indicating an image of the subject using the pixel signal obtained by photoelectric conversion in each pixel P.

[0120] Furthermore, for example, the imaging device 1 can generate image data (distance image data) related to the distance to an object using the pixel signal of each pixel. In this embodiment, the light guiding section 60 having the structure 51 can appropriately guide light in an arbitrary wavelength range to the photoelectric conversion section 12 side. It is possible to improve the sensitivity to incident light.

[0121] If the photoelectric conversion units of the pixels of each color have the same light receiving area, there is a risk that the amount of light incident on the photoelectric conversion units of each pixel of each color will differ greatly depending on the distance between pixels of the same color, the characteristics of the metasurface layer, etc. It is possible that the difference between the sensitivity of a pixel of a certain color and the sensitivity of a pixel of another color will become large. For example, as shown in Figure 9, the quantum efficiency of each of the R pixels, G pixels, and B pixels will differ greatly.

[0122] In the comparative example shown in FIG. 9, the quantum efficiency of the G pixel is significantly different from the quantum efficiency of the R pixel (or the B pixel). For example, due to differences in the distance between pixels of the same color, differences in the areas that can receive light through the metasurface layer occur in the pixels of each color, and the sensitivity difference between the pixels may increase. This may cause deterioration in the image quality of the image generated using the signals of the pixels of each color.

[0123] In the imaging device 1 according to the present embodiment, the pixels P of each color are configured to have different sizes or structures. The pixels P of each color are configured, for example, to have different light receiving areas of the photoelectric conversion units 12. In the example shown in Figs. 3 and 4, the light receiving area of ​​the photoelectric conversion unit 12 of the G pixel is larger than the light receiving area of ​​the photoelectric conversion unit 12 of the R pixel (or B pixel). In this case, as shown in Fig. 10, it is possible to reduce the difference in quantum efficiency between the R pixel, the G pixel, and the B pixel. This makes it possible to suppress deterioration in image quality.

[0124] The imaging device 1 has a structure in which, for example, the pixel Pg is enlarged and the pixels Pr and Pb are reduced. This makes it possible to reduce the difference in sensitivity between the pixels P of each color. It is possible to improve the sensitivity by the optical layer 70 (metasurface layer) while avoiding image quality deterioration caused by the sensitivity difference. It is possible to realize a photodetector with good detection performance.

[0125] 11A to 11C are diagrams for explaining another example of the configuration of the photodetector according to the first embodiment. FIGS. 11A to 11C show another example of the arrangement of pixels P of the pixel section 100 in the imaging device 1. The imaging device 1 may be provided with a pixel Pw that receives and photoelectrically converts W (white) light, i.e., a C (clear) pixel. Also, a pixel Py that receives and photoelectrically converts light with a Ye (yellow) wavelength and a pixel Pc that receives and photoelectrically converts light with a Cy (cyan) wavelength may be provided.

[0126] For example, pixels Pr, Pw, and Pb may be arranged in an RCCB array as shown in Fig. 11A. Also, pixels Pr, Pw, and Pg may be arranged in an RCCG array as shown in Fig. 11B. Pixels Pr, Py, and Pc may be arranged in an RYYCy array as shown in Fig. 11C.

[0127] The photodetector according to the present disclosure can also be applied to a device that separates infrared light according to wavelength. The photodetector (imaging device) can also be configured as a device that detects infrared light in a plurality of wavelength bands. The optical layer (or light guide) of the photodetector (imaging device) can be configured to separate incident infrared light into infrared light in a first wavelength band, infrared light in a second wavelength band, infrared light in a third wavelength band, and the like.

[0128] The pixel that receives infrared light in a first wavelength range and performs photoelectric conversion, the pixel that receives infrared light in a second wavelength range and performs photoelectric conversion, and the pixel that receives infrared light in a third wavelength range and performs photoelectric conversion may be configured to have different sizes or structures. For example, the photodetector may be configured such that the light receiving area of ​​the photoelectric conversion unit differs for each type of pixel.

[0129] [Actions and Effects] The photodetector according to this embodiment includes an optical layer (optical layer 70) having a plurality of structures (structures 51) arranged in a first direction (e.g., the X-axis direction), a plurality of first pixels (e.g., pixel Pg), each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels (e.g., pixel Pb), each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The spacing between the first pixels is different from the spacing between the second pixels. The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element.

[0130] In the photodetector according to the present embodiment, an optical layer 70 having a plurality of structures 51 is provided. The distance between the pixels Pg is different from the distance between the pixels Pb. The light receiving area of ​​the photoelectric conversion unit 12 of the pixel Pg is different from the light receiving area of ​​the photoelectric conversion unit 12 of the pixel Pb. This makes it possible for the photodetector (imaging device 1) to appropriately improve the sensitivity of each pixel. It is possible to realize a photodetector capable of improving characteristics with respect to incident light.

[0131] Next, a modified example of the present disclosure will be described. In the following, the same components as those in the above embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0132] (Variation 1) In the above-mentioned embodiment, the configuration example of the imaging device has been described, but the configuration of the imaging device is not limited to the above-mentioned example. Fig. 12 is a diagram showing an example of a planar configuration of the imaging device according to the first modification of the present disclosure. Fig. 13 is a diagram showing an example of a cross-sectional configuration of the imaging device according to the first modification.

[0133] The pixel Pr may be configured such that the photoelectric conversion unit 12 of the pixel Pr has a light receiving area larger than the light receiving area of ​​the photoelectric conversion unit 12 of the pixel Pg. Also, the pixel Pb may be configured such that the photoelectric conversion unit 12 of the pixel Pb has a light receiving area larger than the light receiving area of ​​the photoelectric conversion unit 12 of the pixel Pg.

[0134] 12 and 13, the size of the photoelectric conversion unit 12 of pixel Pr is larger than the size of the photoelectric conversion unit 12 of pixel Pg, and the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pr is larger than the light receiving area of ​​the photoelectric conversion unit 12 of pixel Pg. The width in the X-axis direction (or Y-axis direction) of the photoelectric conversion unit 12 of pixel Pr is larger than the width of the photoelectric conversion unit 12 of pixel Pg.

[0135] Furthermore, the size of the photoelectric conversion unit 12 of pixel Pb is larger than the size of the photoelectric conversion unit 12 of pixel Pg, and the light receiving area of ​​the photoelectric conversion unit 12 in pixel Pb is larger than the light receiving area of ​​the photoelectric conversion unit 12 in pixel Pg. The width in the X-axis direction (or Y-axis direction) of the photoelectric conversion unit 12 of pixel Pb is larger than the width of the photoelectric conversion unit 12 of pixel Pg.

[0136] If the photoelectric conversion units of the pixels of each color have the same light receiving area, depending on the distance between pixels of the same color, the characteristics of the metasurface layer, etc., the quantum efficiency of each of the R pixels, G pixels, and B pixels will differ significantly as shown in Figure 14. In the comparative example shown in Figure 14, the quantum efficiency of the R pixel (or B pixel) is smaller than that of the G pixel.

[0137] 12 and 13, the light receiving area of ​​the photoelectric conversion unit 12 of the R pixel (or B pixel) may be larger than the light receiving area of ​​the photoelectric conversion unit 12 of the G pixel. In this case, the difference in quantum efficiency between the R pixel, the G pixel, and the B pixel can be reduced as shown in Fig. 15. This makes it possible to prevent degradation of image quality.

[0138] <2. Second embodiment> Next, a second embodiment of the present disclosure will be described. In the following, the same components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0139] Fig. 16 is a diagram showing an example of a planar configuration of an imaging device according to a second embodiment of the present disclosure. Figs. 17 and 18 are diagrams showing an example of a cross-sectional configuration of an imaging device according to the second embodiment. In the imaging device 1 according to this embodiment, the size of the opening 45 in the light blocking member 40 of each pixel P may be configured to be different. Note that the photoelectric conversion units 12 of the pixels P of each color may all have the same size.

[0140] The imaging device 1 is configured such that the openings 45 (width, area, etc.) of the light blocking member 40 are different for each type of pixel P. In this case, the area where the photoelectric conversion unit 12 receives light varies depending on the size of the openings 45. The photoelectric conversion unit 12 of the pixel P of each color may have a light receiving area corresponding to the size of the openings 45 of that pixel P.

[0141] The size of the opening 45 provided for pixel Pg may be larger than the size of the opening 45 provided for pixel Pb. It can also be said that the light shielding member having the opening 45 in pixel Pg (referred to as light shielding member 40g) and the light shielding member having the opening 45 in pixel Pb (referred to as light shielding member 40b) have different areas (opening areas).

[0142] Furthermore, the size of the opening 45 provided for the pixel Pg may be larger than the size of the opening 45 provided for the pixel Pr. It can also be said that the light shielding member 40g having the opening 45 in the pixel Pg and the light shielding member having the opening 45 in the pixel Pr (referred to as light shielding member 40r) have different opening areas.

[0143] In the example shown in Fig. 17, the width W1 of the opening 45 of the light shielding member 40g is larger than the width W2 of the opening 45 of the light shielding member 40b. The area that the photoelectric conversion unit 12 of the pixel Pg can receive light is larger than the area that the photoelectric conversion unit 12 of the pixel Pb can receive light. Also, as shown in Fig. 18, the width W1 of the opening 45 of the light shielding member 40g may be larger than the width W3 of the opening 45 of the light shielding member 40r. The area that the photoelectric conversion unit 12 of the pixel Pg can receive light is larger than the area that the photoelectric conversion unit 12 of the pixel Pr can receive light.

[0144] 16 to 18, the light shielding members 40g, 40b, and 40r are, for example, continuously formed and integrally provided. The light shielding members 40g, 40b, and 40r may be integrally provided or may be separated from each other.

[0145] The imaging device 1 according to the present embodiment is configured so that the size of the opening 45 in the pixel P of each color is different. The opening area in the pixel P of each color is adjusted, and it is possible to reduce the difference in quantum efficiency between the pixels P of each color. It is possible to prevent degradation in the quality of the image generated using the pixel signals of each pixel.

[0146] 19 is a diagram for explaining another configuration example of the imaging device according to the second embodiment. The size of the opening 45 provided for the pixel Pg may be smaller than the size of the opening 45 provided for the pixel Pb (or pixel Pr). For example, depending on the optical characteristics of the optical layer 70, the imaging device 1 may be configured so that the opening 45 of the pixel Pg has an area (opening area) smaller than the opening 45 of the pixel Pb (or pixel Pr).

[0147] [Actions and Effects] The photodetector according to the present embodiment includes an optical layer (optical layer 70) having a plurality of structures arranged in a first direction, a plurality of first pixels (e.g., pixel Pg), each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels (e.g., pixel Pb), each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The interval between the first pixels is different from the interval between the second pixels. The first pixel has a first light-shielding member (e.g., light-shielding member 40g) that is provided between the optical layer and the first photoelectric conversion element and has a first opening (opening 45) through which light is incident. The second pixel has a second light-shielding member (e.g., light-shielding member 40b) that is provided between the optical layer and the second photoelectric conversion element and has a second opening through which light is incident. The width of the first opening is different from the width of the second opening.

[0148] The photodetector according to the present embodiment includes an optical layer 70 having a plurality of structures 51, a pixel Pg having a light shielding member 40g, and a pixel Pb having a light shielding member 40b. The width of the opening 45 of the light shielding member 40g is different from the width of the opening 45 of the light shielding member 40b. Therefore, the photodetector (imaging device 1) can appropriately improve the sensitivity of each pixel. It is possible to realize a photodetector capable of improving the characteristics with respect to incident light.

[0149] <3. Third embodiment> Next, a third embodiment of the present disclosure will be described. In the following, the same components as those in the above-described embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0150] Fig. 20 is a diagram showing an example of a planar configuration of an imaging device according to a third embodiment of the present disclosure. Fig. 21 is a diagram showing an example of a cross-sectional configuration of an imaging device according to the third embodiment. As shown in Figs. 20 and 21, an imaging device 1 according to this embodiment has a lens 81. The lens 81 (lens unit) guides light incident from above to the photoelectric conversion unit 12 side.

[0151] The lens 81 is provided above the photoelectric conversion unit 12, for example, for each pixel P or for each set of pixels P. In the example shown in Fig. 21, the lens 81 is formed on the light blocking member 40 having the opening 45 in the insulating layer 80. The lens 81 is a lens that collects light, and is an optical member also called an inner lens.

[0152] Light from a subject to be measured is incident on the lens 81 through the optical layer 70. The lens 81 guides the light incident through the light guiding section 60 of the optical layer 70 to the photoelectric conversion section 12 side of the pixel P. The photoelectric conversion section 12 of the pixel P receives the light incident through the optical layer 70, the lens 81, and the opening 45, and performs photoelectric conversion.

[0153] In the imaging device 1 according to the present embodiment, the size of the lens 81 is configured to be different for each pixel P. For example, the imaging device 1 is configured so that the size (width, area, etc.) of the lens 81 is different for each type of pixel P. As one example, the size of the lens 81 provided in pixel Pg is different from the size of the lens 81 provided in pixel Pr (or pixel Pb).

[0154] The size of the lens 81 of pixel Pg may be larger than the size of the lens 81 of pixel Pb, as in the example shown in Fig. 21. The size of the lens 81 of pixel Pg may also be larger than the size of the lens 81 of pixel Pr. For example, the width in the X-axis direction (or Y-axis direction) and the height (thickness) in the Z-axis direction of the lens 81 of pixel Pg are set so that light is collected onto the photoelectric conversion unit 12 of pixel Pg from a wider range than that of pixel Pr (or pixel Pb).

[0155] The imaging device 1 according to the present embodiment is configured so that the size of the lens 81 in the pixel P of each color is different. By adjusting the size of the lens 81 in the pixel P of each color, it is possible to reduce the difference in quantum efficiency between the pixels P of each color. It is possible to suppress deterioration in image quality.

[0156] 22 is a diagram for explaining another configuration example of the imaging device according to the third embodiment. The size of the lens 81 provided for the pixel Pg may be smaller than the size of the lens 81 provided for the pixel Pb (or pixel Pr). For example, depending on the optical characteristics of the optical layer 70, the lens 81 of the pixel Pg may be configured to have a width smaller than the width of the lens 81 of the pixel Pb (or pixel Pr).

[0157] [Actions and Effects] The photodetector according to this embodiment includes an optical layer (optical layer 70) having a plurality of structures arranged in a first direction, a first lens (lens 81), a first pixel (e.g., pixel Pg) each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first lens, and a second pixel (e.g., pixel Pb) each having a second lens and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second lens. The size of the first lens is different from the size of the second lens.

[0158] In the photodetector according to the present embodiment, an optical layer 70 having a plurality of structures 51 is provided. The size of the lens 81 of the pixel Pg is different from the size of the lens 81 of the pixel Pb. Therefore, the photodetector (imaging device 1) can appropriately improve the sensitivity of each pixel. It is possible to realize a photodetector capable of improving the characteristics with respect to incident light.

[0159] <4. Fourth embodiment> Next, a fourth embodiment of the present disclosure will be described. In the following, the same components as those in the above-mentioned embodiment are denoted by the same reference numerals, and the description thereof will be omitted as appropriate.

[0160] Fig. 23 is a diagram showing an example of a cross-sectional configuration of an imaging device according to a fourth embodiment of the present disclosure. As shown in Fig. 23, the imaging device 1 according to this embodiment has a filter 85. The filter 85 is configured to selectively transmit light of a specific wavelength range among incident light.

[0161] The filter 85 is provided above the photoelectric conversion unit 12, for example, for each pixel P or for each set of multiple pixels P. The photoelectric conversion unit 12 of the pixel P performs photoelectric conversion on light incident via the optical layer 70 and the filter 85. In the example shown in FIG. 23 , the filter 85 is provided in the insulating layer 80, facing the opening 45 of the light blocking member 40. For example, at least a portion of the filter 85 is provided within the opening 45.

[0162] The filter 85 is, for example, an RGB color filter. In the imaging device 1, for example, the pixel Pr has a filter 85 that transmits red (R) light. The pixel Pg has a filter 85 that transmits green (G) light. Moreover, the pixel Pb has a filter 85 that transmits blue (B) light. Note that the filter 85 may be a complementary color filter such as Cy (cyan), Ye (yellow), or Mg (magenta). Also, a filter that transmits infrared light may be disposed.

[0163] In the imaging device 1 according to the present embodiment, the filters 85 of the various pixels P are configured to have different thicknesses or materials and to have different transmittances. For example, the imaging device 1 is configured so that the thickness (height) of the filter 85 differs for each pixel P of each color. As an example, the thickness of the filter 85 provided in the pixel Pg is different from the thickness of the filter 85 provided in the pixel Pr (or pixel Pb).

[0164] The filters 85 of the pixels P of each color may be made of materials having different transmittances. As an example, the filter 85 of the pixel Pg may be made of a material having a transmittance lower than that of the filter 85 of the pixel Pr (or pixel Pb).

[0165] 23, the thickness (height) in the Z-axis direction of filter 85 of pixel Pg is smaller than the thickness (height) of filter 85 of pixel Pb. In addition, the thickness of filter 85 of pixel Pg may be smaller than the thickness of filter 85 of pixel Pr. This makes it possible to increase the amount of light received by photoelectric conversion unit 12 of pixel Pg.

[0166] In the imaging device 1 according to the present embodiment, for example, the thickness or material of the filter 85 in the pixel P of each color is different. The filter 85 of the pixel P of each color can be configured to have a different transmittance from each other. For this reason, it is possible to adjust the amount of light transmitted through the filter 85 of the pixel P of each color and reduce the difference in quantum efficiency between the pixels P of each color. It is possible to prevent degradation of image quality.

[0167] 24 is a diagram for explaining another configuration example of the imaging device according to the fourth embodiment. The transmittance of the filter 85 provided for the pixel Pg may be smaller than the transmittance of the filter 85 provided for the pixel Pb (or pixel Pr). For example, depending on the optical characteristics of the optical layer 70, the filter 85 of the pixel Pg may have a thickness larger than the thickness of the filter 85 of the pixel Pb (or pixel Pr).

[0168] [Actions and Effects] The photodetector according to this embodiment includes an optical layer (optical layer 70) having a plurality of structures arranged in a first direction, a first filter (filter 85) and a first pixel (e.g., pixel Pg) having a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first filter, and a second pixel (e.g., pixel Pb) having a second filter and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second filter. The first filter and the second filter have different thicknesses or materials.

[0169] In the photodetector according to the present embodiment, an optical layer 70 having a plurality of structures 51 is provided. The filter 85 of pixel Pg and the filter 85 of pixel Pb have different thicknesses or materials. Therefore, the photodetector (imaging device 1) can appropriately improve the sensitivity of each pixel. It is possible to realize a photodetector capable of improving characteristics with respect to incident light.

[0170] <5. Application Examples> The imaging device 1 and the like can be applied to any type of electronic device equipped with an imaging function, such as a camera system such as a digital still camera or a video camera, or a mobile phone with an imaging function. Fig. 25 shows a schematic configuration of an electronic device 1000.

[0171] The electronic device 1000 includes, for example, a lens group 1001, an imaging device 1, a DSP (Digital Signal Processor) circuit 1002, a frame memory 1003, a display unit 1004, a recording unit 1005, an operation unit 1006, and a power supply unit 1007, which are interconnected via a bus line 1008.

[0172] The lens group 1001 captures incident light (image light) from a subject and forms an image on the imaging surface of the imaging device 1. The imaging device 1 converts the amount of incident light formed on the imaging surface by the lens group 1001 into an electrical signal on a pixel-by-pixel basis and supplies the signal to the DSP circuit 1002 as a pixel signal.

[0173] The DSP circuit 1002 is a signal processing circuit that processes a signal supplied from the imaging device 1. The DSP circuit 1002 outputs image data obtained by processing the signal from the imaging device 1. The frame memory 1003 temporarily holds the image data processed by the DSP circuit 1002 on a frame-by-frame basis.

[0174] The display unit 1004 is, for example, a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and records image data of moving images or still images captured by the imaging device 1 in a recording medium such as a semiconductor memory or a hard disk.

[0175] The operation unit 1006 outputs operation signals for various functions of the electronic device 1000 in accordance with operations by a user. The power supply unit 1007 appropriately supplies various types of power to the DSP circuit 1002, the frame memory 1003, the display unit 1004, the recording unit 1005, and the operation unit 1006 as operating power sources to these power sources.

[0176] <6. Application Examples> (Example of application to moving objects) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, a robot, etc.

[0177] FIG. 26 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving object control system to which the technology according to the present disclosure can be applied.

[0178] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 26, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also, as functional configurations of the integrated control unit 12050, a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

[0179] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0180] The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as head lamps, back lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals of various switches transmitted from a portable device that replaces a key may be input to the body system control unit 12020. The body system control unit 12020 receives the input of these radio waves or signals and controls the door lock device, power window device, lamps, and the like of the vehicle.

[0181] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle and receives the captured image. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for a person, a car, an obstacle, a sign, or characters on a road surface, based on the received image.

[0182] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0183] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing.

[0184] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside-of-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output a control command to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0185] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on the driver's operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0186] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control for the purpose of preventing glare, such as switching from high beams to low beams.

[0187] The audio / video output unit 12052 transmits at least one output signal of audio and video to an output device capable of visually or audibly notifying information to passengers in the vehicle or the outside of the vehicle. In the example of Fig. 26, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as the output device. The display unit 12062 may include at least one of an on-board display and a head-up display, for example.

[0188] FIG. 27 is a diagram showing an example of the installation position of the imaging unit 12031.

[0189] In FIG. 27, a vehicle 12100 has imaging units 12101, 12102, 12103, 12104, and 12105 as an imaging unit 12031.

[0190] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided at positions such as the front nose, side mirrors, rear bumper, back door, and the upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The images of the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

[0191] 27 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

[0192] At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera made up of a plurality of imaging elements, or may be an imaging element having pixels for detecting a phase difference.

[0193] For example, the microcomputer 12051 can extract, as a preceding vehicle, a three-dimensional object that is the closest three-dimensional object on the travel path of the vehicle 12100 and travels at a predetermined speed (for example, 0 km / h or more) in approximately the same direction as the vehicle 12100, by calculating the distance to each three-dimensional object in the imaging ranges 12111 to 12114 and the change over time of this distance (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104. Furthermore, the microcomputer 12051 can set a vehicle distance to be secured in advance in front of the preceding vehicle, and perform automatic brake control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving that travels autonomously without relying on the driver's operation.

[0194] For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0195] At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured images of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured images of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

[0196] An example of a mobile object control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 among the configurations described above. Specifically, for example, the imaging device 1 or the like can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, it becomes possible to obtain a high-definition captured image. It becomes possible to perform high-precision control using the captured image in the mobile object control system.

[0197] (Application example to endoscopic surgery system) The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

[0198] FIG. 28 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology according to the present disclosure (the present technology) can be applied.

[0199] 28 shows a state in which an operator (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using an endoscopic surgery system 11000. As shown in the figure, the endoscopic surgery system 11000 is composed of an endoscope 11100, other surgical tools 11110 such as an insufflation tube 11111 and an energy treatment tool 11112, a support arm device 11120 that supports the endoscope 11100, and a cart 11200 on which various devices for endoscopic surgery are mounted.

[0200] The endoscope 11100 is composed of a lens barrel 11101, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 is configured as a so-called rigid scope having a rigid lens barrel 11101, but the endoscope 11100 may be configured as a so-called flexible scope having a flexible lens barrel.

[0201] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is irradiated via the objective lens toward an observation target in the body cavity of the patient 11132. The endoscope 11100 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0202] An optical system and an image sensor are provided inside the camera head 11102, and reflected light (observation light) from an observation target is collected on the image sensor by the optical system. The observation light is photoelectrically converted by the image sensor to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The image signal is transmitted to a camera control unit (CCU) 11201 as RAW data.

[0203] The CCU 11201 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0204] Under the control of the CCU 11201, the display device 11202 displays an image based on an image signal that has been subjected to image processing by the CCU 11201.

[0205] The light source device 11203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 11100 with irradiation light when photographing an operation site or the like.

[0206] The input device 11204 is an input interface for the endoscopic surgery system 11000. A user can input various information and instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiated light, magnification, focal length, etc.) of the endoscope 11100.

[0207] The treatment tool control device 11205 controls the driving of the energy treatment tool 11112 for cauterizing tissue, incising, sealing blood vessels, etc. The insufflation device 11206 sends gas into the body cavity of the patient 11132 via the insufflation tube 11111 to inflate the body cavity for the purpose of securing the field of view of the endoscope 11100 and securing the working space of the surgeon. The recorder 11207 is a device capable of recording various information related to the surgery. The printer 11208 is a device capable of printing various information related to the surgery in various formats such as text, image, or graph.

[0208] The light source device 11203 that supplies irradiation light to the endoscope 11100 when photographing the surgical site can be composed of a white light source composed of, for example, an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 11203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation object with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 11102 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0209] The light source device 11203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. The driving of the image sensor of the camera head 11102 may be controlled in synchronization with the timing of the change in the light intensity to obtain images in a time-division manner, and the images may be synthesized to generate an image with a high dynamic range that is free of so-called blackout and whiteout.

[0210] The light source device 11203 may be configured to supply light of a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, by utilizing the wavelength dependency of light absorption in body tissue, a narrow band light is irradiated compared to the irradiated light (i.e., white light) during normal observation, and a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast, so-called narrow band imaging is performed. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained by fluorescence generated by irradiating an excitation light. In the fluorescent observation, it is possible to irradiate an excitation light to a body tissue and observe the fluorescence from the body tissue (autofluorescence observation), or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 11203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0211] FIG. 29 is a block diagram showing an example of the functional configuration of the camera head 11102 and the CCU 11201 shown in FIG.

[0212] The camera head 11102 has a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so as to be able to communicate with each other.

[0213] The lens unit 11401 is an optical system provided at the connection portion with the lens barrel 11101. Observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and enters the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

[0214] The imaging unit 11402 is composed of an imaging element. The imaging element constituting the imaging unit 11402 may be one (so-called single-plate type) or multiple (so-called multi-plate type). When the imaging unit 11402 is composed of a multi-plate type, for example, each imaging element may generate an image signal corresponding to each of RGB, and a color image may be obtained by combining the image signals. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display. By performing 3D display, the surgeon 11131 can more accurately grasp the depth of the biological tissue in the surgical site. Note that when the imaging unit 11402 is composed of a multi-plate type, multiple lens units 11401 may be provided corresponding to each imaging element.

[0215] Furthermore, the imaging unit 11402 does not necessarily have to be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101, immediately behind the objective lens.

[0216] The driving unit 11403 is configured by an actuator, and moves the zoom lens and focus lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. This allows the magnification and focus of the image captured by the imaging unit 11402 to be appropriately adjusted.

[0217] The communication unit 11404 is configured by a communication device for transmitting and receiving various information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 via the transmission cable 11400 as RAW data.

[0218] Furthermore, the communication unit 11404 receives a control signal for controlling the driving of the camera head 11102 from the CCU 11201, and supplies the control signal to the camera head control unit 11405. The control signal includes information on the imaging conditions, such as information specifying the frame rate of the captured image, information specifying the exposure value at the time of capturing the image, and / or information specifying the magnification and focus of the captured image.

[0219] The image capturing conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by a user, or may be automatically set by the control unit 11413 of the CCU 11201 based on an acquired image signal. In the latter case, the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.

[0220] The camera head control unit 11405 controls the driving of the camera head 11102 based on a control signal received from the CCU 11201 via the communication unit 11404.

[0221] The communication unit 11411 is configured with a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

[0222] Furthermore, the communication unit 11411 transmits, to the camera head 11102, a control signal for controlling the driving of the camera head 11102. The image signal and the control signal can be transmitted by electrical communication, optical communication, or the like.

[0223] The image processing unit 11412 performs various types of image processing on the image signal, which is RAW data sent from the camera head 11102 .

[0224] The control unit 11413 performs various controls related to imaging of the surgical site etc. by the endoscope 11100 and display of the captured image obtained by imaging the surgical site etc. For example, the control unit 11413 generates a control signal for controlling the driving of the camera head 11102.

[0225] Further, the control unit 11413 causes the display device 11202 to display the captured image showing the surgical site, etc., based on the image signal that has been image-processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 can recognize surgical tools such as forceps, specific living body parts, bleeding, mist when the energy treatment tool 11112 is used, etc., by detecting the shape and color of the edge of an object included in the captured image. When the control unit 11413 causes the display device 11202 to display the captured image, it may use the recognition result to superimpose various types of surgery support information on the image of the surgical site. By superimposing and presenting the surgery support information to the surgeon 11131, the burden on the surgeon 11131 can be reduced and the surgeon 11131 can proceed with the surgery reliably.

[0226] The transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electrical signal cable for communication of electrical signals, an optical fiber for optical communication, or a composite cable of these.

[0227] Here, in the illustrated example, communication is performed wired using a transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may also be performed wirelessly.

[0228] An example of an endoscopic surgery system to which the technology according to the present disclosure can be applied has been described above. Of the configurations described above, the technology according to the present disclosure can be suitably applied to, for example, the imaging unit 11402 provided in the camera head 11102 of the endoscope 11100. By applying the technology according to the present disclosure to the imaging unit 11402, it is possible to provide a high-definition endoscope 11100.

[0229] Although the present disclosure has been described above by way of the embodiment, modifications, application examples, and application examples, the present technology is not limited to the above-described embodiment, etc., and various modifications are possible. For example, although the above-described modifications have been described as modifications of the above-described embodiment, the configurations of the modifications can be appropriately combined.

[0230] In the above embodiments, an imaging device has been described as an example, but the photodetection device of the present disclosure may be, for example, a device that receives incident light and converts the light into an electric charge. The output signal may be a signal of image information or a signal of distance measurement information. The photodetection device (imaging device) may be applied to an image sensor, a distance measurement sensor, and the like. Note that the present disclosure is not limited to a back-illuminated image sensor, but may also be applied to a front-illuminated image sensor.

[0231] The photodetector according to the present disclosure may also be applied as a distance measuring sensor capable of measuring distances by a time-of-flight (TOF) method. The light receiving element (photoelectric conversion unit) of each pixel may be an avalanche photodiode (APD). The light receiving element may be configured, for example, by a single-photon avalanche diode (SPAD). The photodetector (imaging device) may also be applied as a sensor capable of detecting an event, for example, an event-driven sensor (also called an event vision sensor (EVS), an event driven sensor (EDS), a dynamic vision sensor (DVS), etc.).

[0232] The photodetector of one embodiment of the present disclosure includes an optical layer having a plurality of structures, a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The interval between the first pixels is different from the interval between the second pixels. The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. Therefore, the photodetector can appropriately improve the sensitivity of the pixel. It is possible to realize a photodetector capable of improving the characteristics with respect to incident light.

[0233] The photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures, a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer, and a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer. The interval between the first pixels is different from the interval between the second pixels. The first pixel has a first light-shielding member provided between the optical layer and the first photoelectric conversion element and having a first opening through which light is incident. The second pixel has a second light-shielding member provided between the optical layer and the second photoelectric conversion element and having a second opening through which light is incident. The width of the first opening is different from the width of the second opening. This makes it possible for the photodetector to appropriately improve the sensitivity of the pixel. It is possible to realize a photodetector capable of improving characteristics with respect to incident light.

[0234] The photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures, a first pixel having a first lens and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first lens, and a second pixel having a second lens and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second lens. The size of the first lens is different from the size of the second lens. This makes it possible for the photodetector to appropriately improve the sensitivity of the pixel. It is possible to realize a photodetector that can improve the characteristics with respect to incident light.

[0235] A photodetector according to an embodiment of the present disclosure includes an optical layer having a plurality of structures, a first pixel having a first filter and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first filter, and a second pixel having a second filter and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second filter. The first filter and the second filter have different thicknesses or materials. This makes it possible for the photodetector to appropriately improve the sensitivity of the pixel. It is possible to realize a photodetector that can improve the characteristics for incident light.

[0236] In addition, the effects described in this specification are merely examples and are not limited to the description, and other effects may be obtained. In addition, the present disclosure may have the following configurations. (1) an optical layer having a plurality of structures arranged in a first direction; a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer; a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer; Equipped with a distance between the first pixels is different from a distance between the second pixels, The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. Light detection device. (2) The light receiving area of ​​the first photoelectric conversion element is larger than the light receiving area of ​​the second photoelectric conversion element. The light detection device according to (1) above. (3) The distance between the first pixels is smaller than the distance between the second pixels. The optical detection device according to (1) or (2). (4) The first pixel is larger in size than the second pixel. The optical detection device according to any one of (1) to (3). (5) The light receiving area of ​​the first photoelectric conversion element is smaller than the light receiving area of ​​the second photoelectric conversion element. The light detection device according to (1) above. (6) the first pixel includes a first light shielding member provided between the optical layer and the first photoelectric conversion element and having a first opening through which light is incident; the second pixel includes a second light shielding member provided between the optical layer and the second photoelectric conversion element and having a second opening through which light is incident; The width of the first opening is different from the width of the second opening. The photodetector according to any one of (1) to (5). (7) The width of the first opening is greater than the width of the second opening. The photodetector according to (6) above. (8) The first light blocking member and the second light blocking member are integrally provided. The optical detection device according to (6) or (7) above. (9) the first photoelectric conversion element receives light in a green wavelength range as the light of the first wavelength, The second photoelectric conversion element receives light in a blue wavelength range as the light of the second wavelength. The photodetector according to any one of (1) to (8). (10) a third pixel having a third photoelectric conversion element that receives light of a third wavelength through the optical layer, The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the third photoelectric conversion element. The photodetector according to any one of (1) to (9) above. (11) the first photoelectric conversion element receives light in a green wavelength range as the light of the first wavelength, the second photoelectric conversion element receives light in a blue wavelength range as the light of the second wavelength, The third photoelectric conversion element receives light in a red wavelength range as the light of the third wavelength. The optical detection device according to (10) above. (12) The plurality of structures are arranged, in a plan view, in the first direction and a second direction intersecting the first direction. The photodetector according to any one of (1) to (11) above. (13) The structure has a columnar shape. The photodetector according to any one of (1) to (12) above. (14) The optical layer guides, of the incident light, the light of the first wavelength to the first photoelectric conversion element and guides, of the incident light, the light of the second wavelength to the second photoelectric conversion element. The photodetector according to any one of (1) to (13) above. (15) an optical layer having a plurality of structures arranged in a first direction; a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer; a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer; Equipped with a distance between the first pixels is different from a distance between the second pixels, the first pixel includes a first light shielding member provided between the optical layer and the first photoelectric conversion element and having a first opening through which light is incident; the second pixel includes a second light shielding member provided between the optical layer and the second photoelectric conversion element and having a second opening through which light is incident; The width of the first opening is different from the width of the second opening. Light detection device. (16) The first light blocking member and the second light blocking member are integrally provided. The optical detection device according to (15) above. (17) an optical layer having a plurality of structures arranged in a first direction; a first pixel including a first lens and a first photoelectric conversion element configured to receive light having a first wavelength through the optical layer and the first lens; second pixels each including a second lens and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second lens; Equipped with The size of the first lens is different from the size of the second lens. Light detection device. (18) an optical layer having a plurality of structures arranged in a first direction; a first pixel including a first filter and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first filter; a second pixel including a second filter and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second filter; Equipped with The first filter and the second filter have different thicknesses or materials. Light detection device. (19) The first filter and the second filter have different transmittances. The light detection device according to (18) above. (20) An optical system; a light detection device that receives light transmitted through the optical system; Equipped with The light detection device includes: an optical layer having a plurality of structures arranged in a first direction; a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer; a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer; having a distance between the first pixels is different from a distance between the second pixels, The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. electronic equipment. [Explanation of symbols]

[0237] Reference Signs List 1: imaging device, 10: semiconductor layer, 12: photoelectric conversion section, 40: light blocking member, 45: opening, 51: structure, 55: filling member, 60: light guiding section, 70: optical layer, 81: lens, 85: filter.

Claims

1. An optical layer having a plurality of structures arranged in a first direction; a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer; a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer; Equipped with a distance between the first pixels is different from a distance between the second pixels, The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. Light detection device.

2. The light receiving area of ​​the first photoelectric conversion element is larger than the light receiving area of ​​the second photoelectric conversion element.

2. The optical detection device according to claim 1.

3. The distance between the first pixels is smaller than the distance between the second pixels.

3. The optical detection device according to claim 2.

4. The first pixel is larger in size than the second pixel.

3. The optical detection device according to claim 2.

5. The light receiving area of ​​the first photoelectric conversion element is smaller than the light receiving area of ​​the second photoelectric conversion element.

2. The optical detection device according to claim 1.

6. the first pixel includes a first light shielding member provided between the optical layer and the first photoelectric conversion element and having a first opening through which light is incident; the second pixel includes a second light shielding member provided between the optical layer and the second photoelectric conversion element and having a second opening through which light is incident; The width of the first opening is different from the width of the second opening.

2. The optical detection device according to claim 1.

7. The width of the first opening is greater than the width of the second opening.

7. The optical detection device according to claim 6.

8. The first light blocking member and the second light blocking member are integrally provided.

7. The optical detection device according to claim 6.

9. the first photoelectric conversion element receives light in a green wavelength range as the light of the first wavelength, The second photoelectric conversion element receives light in a blue wavelength range as the light of the second wavelength.

2. The optical detection device according to claim 1.

10. a third pixel having a third photoelectric conversion element that receives light of a third wavelength through the optical layer, The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the third photoelectric conversion element.

2. The optical detection device according to claim 1.

11. the first photoelectric conversion element receives light in a green wavelength range as the light of the first wavelength, the second photoelectric conversion element receives light in a blue wavelength range as the light of the second wavelength, The third photoelectric conversion element receives light in a red wavelength range as the light of the third wavelength. The optical detection device according to claim 10.

12. The plurality of structures are arranged, in a plan view, in the first direction and a second direction intersecting the first direction.

2. The optical detection device according to claim 1.

13. The structure has a columnar shape.

2. The optical detection device according to claim 1.

14. The optical layer guides the light of the first wavelength to the first photoelectric conversion element and the light of the second wavelength to the second photoelectric conversion element.

2. The optical detection device according to claim 1.

15. An optical layer having a plurality of structures arranged in a first direction; a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer; a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer; Equipped with a distance between the first pixels is different from a distance between the second pixels, the first pixel includes a first light shielding member provided between the optical layer and the first photoelectric conversion element and having a first opening through which light is incident; the second pixel includes a second light shielding member provided between the optical layer and the second photoelectric conversion element and having a second opening through which light is incident; The width of the first opening is different from the width of the second opening. Light detection device.

16. The first light blocking member and the second light blocking member are integrally provided.

16. The optical detection device of claim 15.

17. An optical layer having a plurality of structures arranged in a first direction; First pixels each having a first lens and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first lens; second pixels each including a second lens and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second lens; Equipped with The size of the first lens is different from the size of the second lens. Light detection device.

18. An optical layer having a plurality of structures arranged in a first direction; a first pixel including a first filter and a first photoelectric conversion element that receives light of a first wavelength through the optical layer and the first filter; a second pixel including a second filter and a second photoelectric conversion element that receives light of a second wavelength through the optical layer and the second filter; Equipped with The first filter and the second filter have different thicknesses or materials. Light detection device.

19. The first filter and the second filter have different transmittances.

20. The optical detection device of claim 18.

20. An optical system; a light detection device that receives light transmitted through the optical system; Equipped with The light detection device includes: An optical layer having a plurality of structures arranged in a first direction; a plurality of first pixels each having a first photoelectric conversion element that receives light of a first wavelength through the optical layer; a plurality of second pixels each having a second photoelectric conversion element that receives light of a second wavelength through the optical layer; having a distance between the first pixels is different from a distance between the second pixels, The light receiving area of ​​the first photoelectric conversion element is different from the light receiving area of ​​the second photoelectric conversion element. electronic equipment.

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