Texturizing surface without bead blasting

Abstract

To provide a system to provide a texture to a surface of a component for use in a semiconductor processing chamber.SOLUTION: The system includes an enclosure comprising a processing region, a support disposed in the processing region, a photon light source to generate a stream of photons, an optical module operably coupled to the photon light source, and a lens. The optical module includes a beam modulator to create a beam of photons from the stream of photons generated from the photon light source, and a beam scanner to scan the surface of the component with the beam of photons. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength in the range from about 345 nm to about 1100 nm to the surface of the component to form a plurality of features on the component.SELECTED DRAWING: Figure 12

Description

[Technical field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure generally relate to methods and systems and apparatus for texturing surfaces of components for use in semiconductor processing chambers. [Background technology]

[0002]

[0002] As integrated circuit devices continue to be manufactured at reduced dimensions, the manufacture of these devices becomes increasingly susceptible to yield loss due to contamination. As a result, the manufacture of integrated circuit devices, especially those with small physical sizes, requires greater control of contamination than previously thought necessary.

[0003] Contamination of integrated circuit devices can result from contamination sources such as undesirable airborne particles impinging on a substrate during thin film deposition, etching, or other semiconductor manufacturing processes. Generally, the manufacture of integrated circuit devices involves the use of chambers, including but not limited to physical vapor deposition (PVD) sputtering chambers, chemical vapor deposition (CVD) chambers, and plasma etch chambers. During the deposition and etching processes, material often condenses from the gas phase onto various interior surfaces of the chamber and onto surfaces of chamber components disposed within the chamber. As material condenses from the gas phase, it forms solid masses that reside on the surfaces of the chamber and components. This condensed foreign matter tends to accumulate on the surfaces and flake or flake off the surfaces during or between wafer process sequences. This flake foreign matter can impinge on and contaminate the wafer and devices formed thereon. Contaminated devices often need to be scrapped, thereby reducing the manufacturing yield of the process.

[0004]

[0004] To prevent flaking of formed foreign particles, the interior surfaces of the chamber and surfaces of chamber components disposed within the chamber may be provided with a particular surface texture. The surface texture is configured such that foreign particles formed on these surfaces have enhanced adhesion to the surface and are less likely to flake off and contaminate the wafer. An important parameter of the surface texture is the surface roughness.

[0005]

[0005] One common texturing process is bead blasting. In the bead blasting process, solid blast beads are propelled towards the surface to be textured. One way in which the solid blast beads can be propelled towards the surface to be textured is by pressurized gas. The solid blast beads are made of a suitable material, for example, aluminum oxide, glass, silica, or hard plastic. Depending on the desired surface roughness, the blast beads can be of various sizes and shapes.

[0006]

[0006] However, the uniformity and repeatability of the bead blasting process can be difficult to control. Furthermore, during the bead blasting process, the surface being textured can become sharply jagged and the impact of the solid blast beads can break off the edges of the surface, thereby introducing a source of contamination. Furthermore, the blast beads can become trapped or embedded within the surface during the bead blasting process. For example, if the surface being textured contains small through-holes of various widths (e.g., a gas distribution showerhead), the blast beads can become trapped within the through-holes. In such a situation, the blast beads, for example, can not only prevent the through-holes from functioning as gas passages, but also become a potential source of contamination of the wafer.

[0007]

[0007] An electromagnetic beam can also be used to texture the chamber surface. Using an electromagnetic beam to texturize the chamber surface may overcome some of the above problems associated with bead blasting. However, the electromagnetic beam must be operated under a vacuum to prevent scattering. Scattering can occur when electrons in the electromagnetic beam interact with air or other gas molecules. Thus, the electromagnetic beam must be operated in a vacuum chamber. The need for a vacuum chamber limits the size of components that can be textured since the components must fit within the vacuum chamber. Additionally, the capital costs associated with operating the electromagnetic beam are significantly higher than the capital costs associated with bead blasting processes. For example, the need for a vacuum chamber increases the costs associated with texturing a surface with an electromagnetic beam.

[0008]

[0008] Therefore, there is a need for an improved texturing process that overcomes the problems associated with bead blasting while avoiding the capital costs and size constraints associated with the use of electromagnetic beams. Summary of the Invention

[0009] One embodiment of the present disclosure relates to a method of providing texture to a surface of a component for use in a semiconductor processing chamber, the method including directing a beam of photons through ambient air or nitrogen to the surface of the component, and scanning the beam of photons across a first region of the surface of the component to form a plurality of features on the surface in the first region, the features formed being depressions, protuberances, or a combination thereof.

[0010] Another embodiment of the present disclosure relates to a method of providing texture to a surface of a component for use in a semiconductor processing chamber, the method including directing a beam of photons to a surface of the component in an atmosphere having a pressure approximately equal to atmospheric pressure, and scanning the beam of photons across a first region of the surface of the component to form a plurality of features on the surface in the first region, the formed features being depressions, protuberances, or a combination thereof.

[0011] Another embodiment of the present disclosure is a component for use in a semiconductor processing chamber. The component includes a plurality of features on a surface in a first region, the features formed being depressions, protuberances, or combinations thereof. The features are formed by scanning a beam of photons across the surface of the component.

[0012] Another embodiment of the present disclosure is a system for providing texture to a surface of a component for use in a semiconductor processing chamber. The system includes an enclosure including a processing region, a support disposed in the processing region and including a support surface, a photon source for generating a stream of photons, an optical module operably coupled to the photon source to receive the stream of photons from the photon source, and a lens. The optical module includes a beam modulator for generating a beam of photons from the stream of photons generated from the photon source, and a beam scanner for scanning the beam of photons onto the surface of the component. The lens is used to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength ranging from about 345 nm to about 1100 nm onto the surface of the component to form a plurality of features on the component.

[0013] Another embodiment of the present disclosure is a method of providing texture to a surface of a component for use in a semiconductor processing chamber, the method including generating a stream of photons, shaping the stream of photons into a beam, scanning the beam of photons toward the surface of the component through a processing region including an ambient air or nitrogen gas concentration at a pressure approximately equal to atmospheric pressure, and distributing the beam of photons to the surface of the component to form a plurality of features on the surface.

[0014] Yet another embodiment of the present disclosure is a system for providing texture to a surface of a component for use in a semiconductor processing chamber. The system includes an enclosure including a processing region maintained as a Class 1 environment having a pressure approximately equivalent to atmospheric pressure, a support disposed in the processing region and including a support surface, a photon source for generating a stream of photons, an optical module operably coupled to the photon source to receive the stream of photons from the photon source, and a lens. The optical module includes a beam modulator for generating a beam of photons from the stream of photons generated from the photon source, and a beam scanner for scanning the beam of photons over the surface of the component. The lens is disposed in the processing region to receive the beam of photons from the beam scanner and distribute the beam of photons at a wavelength ranging from about 345 nm to about 1100 nm over the surface of the component to form a plurality of features on the component.

[0015]

[0015] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be made by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings depict only exemplary embodiments and therefore should not be considered as limiting its scope. [Brief description of the drawings]

[0016] [Figure 1] FIG. 1 shows a schematic diagram of a laser machine and support system according to the present disclosure. [Diagram 2] 1 shows an alternative schematic diagram of a laser machine and support system according to the present disclosure. [Diagram 3] 1 shows a top view of a gas distribution showerhead with areas to be textured marked by borders in accordance with the present disclosure. [Figure 4] 1 illustrates a process sequence for a method of operating a laser machine and support system according to the present disclosure. [Diagram 5] Figures 5 and 6 show repeating random surface morphologies created by a laser machine in accordance with the present disclosure. Figure 5 shows a perspective view of the surface morphology. [Figure 6] Figures 5 and 6 show repeating random surface morphologies created by a laser machine in accordance with the present disclosure. Figure 6 shows a top view illustrating the surface morphology. [Figure 7] Figures 7 and 8 show a repeating wave-shaped surface morphology created by a laser machine in accordance with the present disclosure. Figure 7 shows a perspective view of the surface morphology. [Figure 8] Figures 7 and 8 show a repeating wavy surface morphology created by a laser machine in accordance with the present disclosure. Figure 8 shows a top view and a side view showing the surface morphology. [Figure 9] Figures 9 and 10 show a repeating square shaped surface feature created by a laser machine in accordance with the present disclosure. Figure 9 shows a perspective view showing the surface feature. [Figure 10] Figures 9 and 10 show a repeating square shaped surface feature created by a laser machine in accordance with the present disclosure. Figure 10 shows a top and side view of the surface feature. [Figure 11] 1 shows a schematic diagram of a laser machine and a laser device according to the present disclosure; [Figure 12] 1 shows an alternative schematic diagram of a laser machine and laser device according to the present disclosure. [Figure 13] 1 shows a graph comparing the results of a component textured using a bead blasting process and a process according to the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017]

[0026] To facilitate understanding, identical elements common to the figures have been designated using the same reference numerals, where possible. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0018]

[0027] The patent or application file contains at least one drawing executed in color. Copies of this patent or patent application publication with color drawing(s) will be provided by the Office upon request and payment of the necessary fee.

[0019]

[0028] The embodiments described herein utilize a beam of photons generated by a laser to perform a texturing process on a surface of a component for use in a semiconductor processing chamber. The beam of photons is directed at the surface of the component and scanned over an area of ​​the surface to form a plurality of features. The features formed on the surface include depressions, protuberances, and / or combinations thereof. The beam of photons can be reduced in intensity, defocused, and / or scanned at a particular travel speed to form a desired surface morphology.

[0020]

[0029] FIG. 1 shows a schematic diagram of a laser machine 100 and a support system 102 that can be used to texture a surface 103 of a component 104. The component 104 can be, for example, a gas distribution showerhead, a chamber wall, or an electrostatic chuck. The laser machine 100 comprises a power supply 106, a controller 108, and a laser device 116. The laser device 116 outputs a beam of photons 112. The controller 108 can comprise a modulator and / or a scanner for modulating and scanning the beam of photons 112. The laser machine can further comprise a pulse supply unit for pulsing the beam of photons 112. Pulsing the beam of photons 112 can help minimize the amount of heat applied to the surface 103 of the component 104. Additionally, pulsing the beam of photons 112 can help reduce problems resulting from the reflectivity of the surface 103 of the component 104. The embodiments disclosed herein may be utilized to texture a surface 103 of a component 104 to have an arithmetic mean (Ra) of the roughness profile of about 60 μin to about 360 μin.

[0021]

[0030] The component 104 may include materials such as metals or metal alloys, ceramic materials, polymeric materials, composite materials, or combinations thereof. In one embodiment, the component 104 includes a material selected from the group including steel, stainless steel, tantalum, tungsten, titanium, copper, aluminum, nickel, gold, silver, aluminum oxide, aluminum nitride, silicon, silicon nitride, silicon oxide, silicon carbide, sapphire (Al2O3), silicon nitride, yttria, yttrium oxide, and combinations thereof. In one embodiment, the component 104 includes a metal alloy such as an austenitic stainless steel, an iron-nickel-chromium alloy (e.g., Inconel™ alloy), a nickel-chromium-molybdenum-tungsten alloy (e.g., Hastelloy™), a copper-zinc alloy, a chromium-copper alloy (e.g., 5% or 10% Cr with the balance Cu), or the like. In another embodiment, the component includes quartz. Component 104 may also include polymers such as polyimide (Vespel™), polyetheretherketone (PEEK), polyarylate (Ardel™), etc. In yet another embodiment, component 104 may include materials such as gold, silver, aluminum silicon, germanium, germanium silicon, boron nitride, aluminum oxide, aluminum nitride, silicon, silicon nitride, silicon oxide, silicon carbide, yttria, yttrium oxide, non-polymers, and combinations thereof.

[0022]

[0031] The support system 102 may be disposed downstream of the laser machine 100. The support system 102 comprises a support 122, e.g., similar to a substrate support in one or more embodiments, for supporting the component 104. The support system 102 and the laser machine 100 are disposed relative to each other such that the beam of photons 112 output by the laser device 116 is directed to the surface 103 of the component 104. In one embodiment of the present disclosure shown in FIG. 1, the laser machine 100 may further comprise an actuation means 124 for adjusting the position of the output of the laser device 116. In such an embodiment, the support 122 may remain stationary and the actuation means 124 may adjust the position of the output of the laser device 116, such that the beam of photons 112 output by the laser device 116 is scanned to the surface 103. In an alternative embodiment of the present disclosure shown in FIG. 2, the support system 102 may comprise an actuation means 124 for moving the support 122. In such an embodiment, the output of the laser device 116 can remain stationary and the actuation means 124 can adjust the position of the support 122 such that the beam of photons 112 output by the laser device 116 is scanned across the surface 103. The actuation means 124 for adjusting the position of either the laser device 116 or the support 122 can comprise, for example, an XY stage, an extension arm capable of translational and / or rotational movement, and / or a rotating shaft.

[0023]

[0032] The controller 108 may be connected to the laser device 116 such that it can control various parameters associated with the beam of photons 112 output by the laser device 116. In particular, the controller 108 may be connected to the laser device 116 to control at least the following parameters associated with the beam of photons 112: wavelength, pulse width, repetition rate, movement speed, power level, and beam size. By being able to control these various parameters associated with the beam of photons 112, the controller 108 may define the surface morphology formed on the surface 103 of the component 104. It should be understood that the "movement speed" incorporates embodiments in which the beam of photons 112 is moved and the component 104 is stationary as well as embodiments in which the beam of photons 112 is stationary and the component is moved. As shown in FIG. 2, the controller 108 may also be connected to the support system 102 such that it can control the actuation means 124 connected to the support 122. Alternatively, a secondary controller may be connected to the support system 102 to control the actuation means 124 connected to the support 122.

[0024]

[0033] The controller 108 can be one of any form of general-purpose computer processor (CPU) that can be used in an industrial environment. The computer can use suitable memory such as random access memory, read-only memory, floppy disk drive, hard disk, or other form of digital storage, local or remote. Various support circuits can be coupled to the CPU to support the processor in a conventional manner. If necessary, software routines can be stored in memory or executed on a second CPU located remotely. When the software routines are executed, they transform the general-purpose computer into a specific process computer that controls the operation so that the chamber process is performed. Alternatively, the embodiments described herein can be implemented in hardware, as an application specific integrated circuit or other type of hardware implementation, or a combination of software or hardware.

[0025]

[0034] The laser device 116 of the laser machine 100 may have a power output in the range of about 3W to about 30W. Alternatively, the laser machine may have a power output in the range of about 1W to about 150W. The laser device 116 may also be capable of pulsing and varying parameters associated with the beam of photons 112 (e.g., wavelength, pulse width, pulse frequency, repetition rate, travel speed, power level, and beam size). The laser device 116 of the laser machine 100 may be a commercially available laser. An example of a commercially available laser machine that may be in accordance with the present disclosure is the IPG YLPP laser from Spectra-Physics' Quanta-Ray Lasers.

[0026]

[0035] Since the output of the laser device 116 is a beam of photons 112, the laser machine 100 and support system 102 do not require a vacuum environment to perform the texturing process. Thus, the output of the laser device 116 differs from conventional electromagnetic beam generating systems that use an electron beam to perform the texturing process. Electromagnetic beam systems typically require a vacuum environment (e.g., a vacuum chamber) due to the interaction and scattering of electrons with surrounding gas atoms, and therefore a vacuum environment is necessary to maintain precise control of the electron beam. As noted above, the requirement of a vacuum environment imposes physical constraints on the size of components that can be textured using an electromagnetic beam system, since the components must fit within the vacuum chamber. Furthermore, the requirement of a vacuum environment increases the complexity of the electromagnetic system, since the vacuum chamber must include special equipment (pumps, sensors, seals, etc.). As a result, electromagnetic beam systems have significantly higher capital costs than would be incurred when using the laser machine 100 and support system 102 discussed in this disclosure to perform the texturing process.

[0027]

[0036] Thus, the laser machine 100 and support system 102 may be used in an ambient air environment where the air through which the beam of photons 112 passes is approximately 78% nitrogen and approximately 21% oxygen. However, in some circumstances, it may be desirable to place the laser machine 100 and support system 102 in an oxygen-depleted environment. In such circumstances, the laser machine 100 and support system 102 may be placed in a chamber where nitrogen gas is used instead of ambient air. Since no vacuum is required, the pressure in the chamber may be kept at atmospheric pressure. It should be understood that "atmospheric pressure" may vary from location to location. In some embodiments, the pressure in the area in which the component 104 is located during processing may not be regulated.

[0028]

[0037] FIG. 4 shows a process sequence 200 beginning at 201 and ending at 209 for a method of operating the laser machine 100 and the support system 102. In box 202, the component 104 is placed on the support 122. In box 204, a first region 126 is defined on the surface 103 of the component 104. As shown in FIG. 3, the component 104 is a gas distribution showerhead 133 having a plurality of through holes 135, and the first region 126 has a first outer boundary 127 that defines an outer boundary of the first region. The first outer boundary 127 defines a first surface area. The ratio of the first surface area to the second surface area of ​​the component 104 can be at least 0.6. The second surface area of ​​the component 104 is defined by the second outer boundary 132 of the surface 103 being textured. Thus, the first surface area disposed within the second surface area can be at least 60% of the second surface area. It should be understood that the size of the first and second surface areas will vary depending on the shape and size of the component 104 being textured. Alternatively, the ratio of the first surface area to the second surface area may be greater than 0.7, 0.8, and / or 0.9.

[0029]

[0038] At box 206, the laser machine 100 is powered by the power supply 106 such that the laser device 116 outputs a beam of photons 112. As discussed above, the controller 108 of the laser machine 100 can vary parameters associated with the beam of photons 112 depending on the desired texture on the surface 103. In one embodiment, the beam of photons 112 can have a wavelength in the range of about 345 nm to about 1100 nm. In another embodiment, the beam of photons can have a wavelength in the ultraviolet range (about 170 nm to about 400 nm). In yet another embodiment, the beam of photons can have a wavelength in the infrared range (about 700 nm to about 1.1 mm). The beam of photons 112 output by the laser device 116 is directed toward the surface 103 of the component 104 to a location within the first region 126. The beam of photons 112 can have a beam diameter at the surface 103 of the component 104 in the range of about 7 μm to about 75 μm. Alternatively, the beam of photons 112 may have a beam diameter at the surface 103 of the component 104 in the range of about 2.5 μm to about 100 μm. In one embodiment, the working distance traveled by the beam of photons 112 is between about 50 millimeters and about 1,000 millimeters. In another embodiment, the working distance traveled by the beam of photons 112 is between about 200 millimeters and about 350 millimeters. The laser device 116 of the laser machine 100 may have a power output in the range of about 1 W to about 150 W, such that the beam of photons 112 has a beam diameter of about 10×10 -6 J to approx. 400 x 10 -6 The laser device 116 may have a pulse output in the range of 10 J. The beam of photons 112 may have a pulse width in the range of about 10 ps to about 30 ns. Additionally, the beam of photons 112 may have a pulse repetition rate in the range of about 10 KHz to about 200 KHz in one embodiment, and more specifically, in the range of about 10 KHz to about 3 MHz in another embodiment. The controller 108 may be used to control the pulse width and / or pulse repetition rate of the laser device 116.

[0030]

[0039] At box 208, the beam of photons 112 is scanned across the first region 126 of the surface 103, thereby forming a plurality of features on the surface. The beam of photons 112 can be scanned across the first region 126 of the surface 103, for example, while being pulsed from the laser device 116, at a travel speed ranging from about 0.1 m / sec to about 30 m / sec. As seen in FIGS. 5-10, the features formed as a result of the beam of photons 112 being scanned across the first region 126 of the surface 103 include depressions, protuberances, or combinations thereof. The controller 108 can be programmed to vary certain parameters associated with the beam of photons 112 as the beam is being scanned across the first region 126. For example, the controller 108 can pulse the beam of photons 112 while the beam is being scanned across the first region 126. In one implementation, the controller 108 can control the laser device 116 to have a pulse width in the range of about 0.2 ns to about 100 ns. In one embodiment, the controller 108 can control the laser device 116 to have a pulse width in the range of about 400 fs to about 200 ns.

[0031]

[0040] In this manner, the laser machine 100 may be used to create the overall surface morphology of the first area.

[0032]

[0041] Depending on the circumstances, the laser machine 100 can be used to create three different types of surface morphology in the first region 126. As shown in Figures 5 and 6, the first surface morphology is a repeating random shape that creates a combination of ridges and depressions. It should be understood that the ridges can have flat and convex surfaces, for example. In Figures 5 and 6, the maximum variation in height from the lowest depression to the highest ridge ranges from about 4,000 nm to about 4,500 nm. Because the surface morphology is a repeating random shape, the ridges and depressions do not form a periodic wave.

[0033]

[0042] Repeated shapes can be achieved by synchronizing the pulse frequency and the scan speed. As the pulsed laser and the substrate move relative to each other, the laser emits radiation that strikes the substrate surface at repeat intervals, resulting in a repeating shape. The exact shape of the repeating shape can be tailored by adjusting the time profile of the laser pulse to the scan speed. If a laser pulse with a very fast output ramp time compared to the scan speed is used, the repeating shape will tend toward a substantially rectangular profile since the substrate does not move far during ramp-up or ramp-down. If the ramp time is very small compared to the pulse duration, the repeating shape will also tend toward a substantially rectangular profile since the time profile of the laser pulse is substantially flat. If the scan speed is low compared to the pulse duration or ramp time, the repeating shape will also tend toward a substantially rectangular profile since the photons delivered by each laser pulse are concentrated on a smaller area of ​​the substrate. Increasing the ramp time and / or scan speed compared to the pulse duration will result in the corners of the formed features becoming more rounded or more tapered. The laser pulse itself can also be modulated by coupling a waveform generator to the laser power supply. In this way, pulses with more tapered ramp rates and even sinusoidal temporal profiles can be produced. Such measures result in features that tend towards a wave shape. The feature pitch is determined by the relationship between the pulse frequency and the scan speed. Thus, the feature pitch can be independently adjusted by adjusting the pulse frequency, which is limited at the upper end by the pulse duration.

[0034]

[0043] An example of Ra for the repeating random shapes shown in Figures 5 and 6 is about 60 μin when the power of the laser machine 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 7 μm. It should be understood that the Ra value will vary depending on various variables related to the power of the laser machine 100 and the beam of photons 112. The repeating random shapes achieved using the laser machine 100 may have similar surface morphology and Ra values ​​as those that can be achieved using a bead blasting process, except that the use of the laser machine 100 avoids some of the problems inherent to the bead blasting process. For example, if the component 104 is a gas distribution showerhead 133 (shown diagrammatically in Figure 3), there will be a plurality of tapered through holes 135. As noted above, the bead blasting process involves blasting a plurality of beads at high speeds onto the surface to be textured. As a result, there is an inherent lack of control and precision with respect to the bead blasting process.

[0035]

[0044] The beads used in the bead blasting process may also become trapped or embedded within the through-holes 135. Additionally, the beads may strike corners or edges of the through-holes 135 and undesirably alter the profile of the through-holes rather than texturing the surface 103. Using the laser machine 100 to texturize the gas distribution showerhead 133 with a surface morphology of repeating random shapes does not as drastically alter the boundary profile of the through-holes 135 of the showerhead 133 due to the greater precision that can be achieved through this texturing process. The laser machine 100 may texture the surface 103 within the first region 126 such that the repeating random shapes are continually repeated within the first outer perimeter 127.

[0036]

[0045] As shown in Figures 7 and 8, the second surface morphology is a repeating wave shape that creates a combination of ridges and depressions. It should be understood that the plurality of ridges can have, for example, a generally convex surface. In Figures 7 and 8, the maximum variation in height from the lowest depression to the highest ridge is in the range of about 4,000 nm to about 4,500 nm. Because the surface morphology is a repeating wave shape, the ridges and depressions form a periodic profile, with each of the plurality of ridges coming to a generally convex peak. The periodic profile associated with the repeating wave shape is repeated throughout the first region 126 of the surface 103 along both the surface x-axis and the surface y-axis.

[0037]

[0046] An example of the arithmetic mean (Ra) of the repeating wavy roughness profile shown in Figures 7 and 8 is about 108 μin when the power of the laser machine 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 7 μm. It should be understood that the Ra value will vary depending on various variables related to the power of the laser machine 100 and the beam of photons 112. Unlike a repeating random shape, the repeating wavy shape differs from the surface morphology typically achieved using a bead blasting process. The laser machine 100 can texture the surface 103 in the first region 126 such that the repeating wavy shape is continually repeated within the first outer boundary 127.

[0038]

[0047] As shown in Figures 9 and 10, the third surface morphology is a repeating square shape that creates a combination of ridges and depressions. It should be understood that the plurality of ridges may have, for example, a substantially flat surface. In Figures 9 and 10, the maximum variation in height from the lowest depression to the highest ridge is in the range of about 4,000 nm to about 4,500 nm. Because the surface morphology is a repeating square shape, the ridges and depressions form a periodic profile, with each of the plurality of ridges coming to a substantially flat portion. The periodic profile associated with the repeating square shape is repeated throughout the first region 126 of the surface 103 along both the surface x-axis and the surface y-axis.

[0039]

[0048] An example of the arithmetic mean (Ra) of the roughness profile of the repeating square shape shown in Figures 9 and 10 is about 357 μin when the power of the laser machine 100 is 30 W, the component 104 is aluminum, and the beam diameter is about 25 μm. It should be understood that the Ra value will vary depending on various variables related to the power of the laser machine 100 and the beam of photons 112. The repeating square shape may be particularly applicable when the component 104 is an electrostatic chuck. As best seen in Figure 9, the ridges and valleys in the repeating square shape result in multiple passages. The multiple passages allow gas to pass through the passages underneath a silicon wafer that sits on top of the electrostatic chuck during wafer processing, for example.

[0040]

[0049] A subsequent polishing process may be performed after the texturing process to help planarize the top surfaces of the ridges, thereby facilitating adhesion of the silicon wafer to the electrostatic chuck during wafer processing. Portions of the component 104 that are not planarized during the polishing process retain a surface roughness, thereby helping to prevent flaking off of contaminants that condense in the multiple passes during wafer processing. The laser machine 100 may texture the surface 103 in the first region 126 such that the repeating square shapes are continually repeated within the first outer perimeter 127.

[0041]

[0050] Another advantage associated with the use of the laser machine 100 is that the surface 103 of the component 104 being textured does not need to undergo a precise pre-cleaning process prior to process box 202. Instead, all that is required is a rough pre-cleaning process to degrease the surface 103 of the component 104. This differs from electromagnetic beam systems where a precise pre-cleaning process is generally required due to the high reactivity of the electron beam.

[0042]

[0051] Yet another advantage associated with the use of the laser machine 100 to texture the surface 103 of the component 104 is that after box 202, there is no additional step of pumping down the pressure in the vacuum chamber, as would be the case if an electromagnetic beam system were used. As discussed above, an electromagnetic beam system operates in a vacuum environment, thereby requiring the pressure of the environment to be pumped down. The laser machine 100 and the support system 102 may be placed in a chamber for the purpose of creating an oxygen-depleted environment, but without the need to pump down the environmental pressure. Because this pump-down step is eliminated, the time required to texture the surface 103 of the component 104 with the laser machine 100 is less than the time required to texture the surface of the component with an electron beam. This helps to increase the throughput associated with texturing the surface of the component using the laser machine 100 as compared to texturing the surface of the component using an electromagnetic beam system. The throughput associated with the laser machine 100 is also greater than the throughput associated with using an electromagnetic beam system, because the travel speed at which an electron beam can be scanned across a surface to form multiple features is significantly slower than the travel speed at which a beam of photons 112 can be scanned across a surface. For example, the moving speed of the electron beam when texturing a surface ranges from about 0.02 M / sec to about 0.03 M / sec. As discussed above, the moving speed of the beam of photons 112 when texturing a surface has a range from about 0.1 M / sec to about 300 M / sec.

[0043]

[0052] Another advantage associated with utilizing a beam of photons 112 output by a laser device 116 to texturize the surface 103 of a component 104 is that it creates a cleaner process than, for example, using bead blasting or an electron beam. Depending on the wavelength of the beam of photons 112, the material of the surface 103 at which the beam of photons is directed can receive primarily optical radiation or thermal energy to modify the surface. The optical radiation melts the surface 103 of the component 104 at the location where the beam of photons is directed, thereby creating molten material or slugs that, when resolidified, form either depressions or ridges. The kinetic energy associated with the melted material can be minimized, reducing the likelihood that the melted material will be knocked out of the remaining surface 103 and redeposited elsewhere. This reduces the amount of redeposition that may have otherwise occurred. Conversely, when using electromagnetic beam systems, the component being textured often has embedded electrons that interact with the electron beam to generate significant energy that knocks at least a portion of the melted material away from the remaining surface, thereby increasing the likelihood of redeposition. As a result, texturing a surface with a beam of photons 112 can result in a cleaner process than texturing a surface with an electron beam.

[0044]

[0053] It should be noted that the beam of photons 112 delivered by the laser device 116 to the surface 103 of the component 104 is not intended to cause significant or significant distortion (e.g., melting, warping, cracking, etc.) of the component 104. Significant or significant distortion of the component 104 may generally be defined as a state in which the application of the texturing process renders the component 104 unable to be used for its intended purpose.

[0045]

[0054] 11 and 12 show schematic diagrams of a laser machine 100 that may be used to texture the surface 103 of a component 104. In particular, FIGS. 11 and 12 show different arrangements, parts, and elements of the laser machine 100 and / or the laser device 116. As shown in FIG. 11, the laser machine 100 may have a vertical orientation relative to the component 104, or as shown in FIG. 12, the laser device 116 may have a horizontal orientation relative to the component 104. As discussed above, the component 104 is used in a semiconductor processing chamber. The component 104 may be, for example, a gas distribution showerhead, a shield, a chamber liner, a cover ring, a clamp ring, a substrate support pedestal, and / or an electrostatic chuck. Thus, after being textured with the laser machine 100, the component 104 is used as a component of a semiconductor processing chamber, where semiconductors, such as wafers, are processed in the semiconductor processing chamber.

[0046]

[0055] As discussed above, a laser device 116 is used to output a beam of photons. The laser device 116 in FIGS. 11 and 12 is shown to include a light source 142, such as a photon light source, an optical module 144, and a lens 146, each operatively coupled to one another. However, in other embodiments, the laser device 116 is shown to include a light source 142, an optical module 144, and a lens 146, although the disclosure is not so limited. For example, in one or more other embodiments, the power source 106 and / or the controller 108 shown in FIGS. 1 and 2 may additionally or alternatively include a light source 142, an optical module 144, and / or a lens 146 without departing from the scope of the disclosure.

[0047]

[0056] The light source 142 is used to generate a source of light, specifically, in this embodiment, a stream of photons. The optical module 144, operably coupled to the light source 142, receives the stream of photons from the light source 142 and shapes, directs, or otherwise modulates the stream of photons from the light source 142. The optical module 144 includes a beam modulator and a beam scanner, the beam scanner being disposed downstream (relative to the light source 142) from the beam modulator. The beam modulator receives the stream of photons from the light source 142 and generates a beam of photons from the stream of photons. For example, the beam modulator may be used to generate a beam of photons having a single focal point by shaping the stream of photons from the light source 142. The beam scanner is used to receive the beam of photons from the beam modulator and scan the beam of photons onto the surface 103 of the component 104. In this manner, the beam scanner is used to move, deflect, and otherwise control the direction of the beam of photons, such as through the use of an electromechanical actuator.

[0048]

[0057] Lens 146 is used to receive the beam of photons from optical module 144, and more specifically from the beam scanner, and distribute the beam of photons to surface 103 of component 104. As the beam modulator of optical module 144 is used to focus the stream of photons into a beam of photons, such as a single focused beam of photons, lens 146 is used to defocus the beam of photons and distribute it evenly across a predefined area or region. For example, lens 146 can be used to focus the beam of photons to a focal length of approximately 355 mm. 2 The beam of photons distributed across the surface 103 of the component 104 is used to form one or more textured features on the surface 103 of the component 104, such as depressions and / or protuberances on the surface 103 of the component 104.

[0049]

[0058] The laser device 116 is used to control the power, speed, frequency, direction, distribution, and / or pulsing of the beam of photons emitted from the laser device 116 and scanned onto the surface 103 of the component 104. For example, the light source 142 and / or the optical module 144 may be used to pulse the beam of photons while it is scanned onto the surface 103 of the component 104. Additionally, a beam scanner in the optical module 144 may be used to direct or scan the beam of photons onto the surface 103 of the component 104 in one or more predefined patterns. In one embodiment, the beam scanner may be used to scan the beam of photons using a line-by-line pattern, a sparrow pattern, and / or a random pattern. A sparrow pattern involves scanning the beam of photons in an out-to-in or in-to-out pattern relative to a central or central region of the surface 103 of the component 104, and thus operating in a radial pattern as opposed to a line-by-line pattern.

[0050]

[0059] The laser device 116 is also used to distribute and scan the beam of photons vertically or horizontally from the lens 146 towards the surface 103 of the component 104. A support 122 including a support surface 190 is shown in use with the laser machine 100, with the component 104 positioned between the lens 146 and the support 122. In the arrangement shown in FIG. 11, where the beam of photons is distributed vertically towards the surface 103 of the component 104, the support surface 190 is used to support the component 104 on the support 122, and thus the component 104 is positioned on the support surface 190 of the support 122. In the arrangement shown in FIG. 12, where the beam of photons is distributed horizontally towards the surface 103 of the component 104, the support surface 190 of the support 122 is used as a barrier behind the component 104. An advantage of the horizontal arrangement shown in FIG. 12 is that gravity can be used to pull the material away from the surface 103 of the component 104, such as when the material melts. This allows for a cleaner process than if material was allowed to redeposit or form on the surface.

[0051]

[0060] 11 and 12, a clean enclosure 150 or clean compartment for use with the laser machine 100 is included. The clean enclosure 150 generally includes a processing area 151 in which the support 122 is disposed. For example, the component 104 is disposed within the clean enclosure 150 during a texturing process, and the processing area 151 of the clean enclosure 150 includes a filtration system capable of maintaining the processing area as a Class 1 environment according to classification parameters from ISO 14644-1. Additionally, at least a portion of the laser device 116, such as the support 122 and the lens 146, is disposed within the clean enclosure 150. Because the laser machine 100 is used within a non-pressurized (e.g., atmospheric) environment, the pressure within the clean enclosure 150 can be approximately equal to or about atmospheric pressure, or may not be pressure regulated. The clean enclosure 150 may alternatively and / or additionally be purged with an inert gas (e.g., N2) to remove oxygen, water, and / or other process contaminants. Additionally, a conveyor may be used to introduce the components 104 into the clean enclosure 150 and onto the supports 122 and / or to remove the components 104 from the supports 122 and out of the clean enclosure 150. For example, the supports 122 may include a conveyor in such an embodiment. Alternatively, a separate robotic arm or similar mechanism may be used to facilitate removal of the components 104 from and / or placement of the components 104 on the conveyor.

[0052]

[0061] 13 shows a graphical representation comparing average elemental results for components textured using a bead blasting process 302, components textured using a laser process 304 according to embodiments described herein, and specifications 306 typically required for components used in semiconductor processing chambers. The x-axis provides the various elements (e.g., trace metals) tested for in each component, and the y-axis provides the atoms / cm 2 306 provides the amount of an element on the surface of the component in units of 1000 nm. As shown, components textured using laser process 304 generally had fewer elements or trace metals than those required by specification 306, and also generally had fewer elements or trace metals than those textured using bead blasting process 302. For example, because the beads used in bead blasting process 302 generally contain sodium (Na), components textured using laser process 304, as opposed to bead blasting process 302, had significantly reduced amounts of sodium. Components textured using laser process 304 may generally have greater amounts of magnesium (Mg), but these components can be subsequently cleaned using dilute acid and high purity water (e.g., hot deionized water) to remove excess magnesium. Thus, components textured using laser process 304 provided higher yields, such as about 95%, during subsequent semiconductor processing compared to components textured using bead blasting process 302 (which is expected to have a yield of about 50%).

[0053]

[0062] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the disclosure, the scope of the present disclosure being determined by the following claims.

Claims

1. 1. A system for providing texture to a surface of a component for use in a semiconductor processing chamber, comprising: an enclosure containing a processing area; a support disposed in the processing area and having a support surface; a photon source for generating a stream of photons; an optical module operatively coupled to said photon source to receive said stream of photons from said photon source, a beam modulator for generating a beam of photons from the stream of photons generated from the photon source; and a beam scanner for scanning the beam of photons onto the surface of the component; An optical module comprising: a lens for receiving the beam of photons from the beam scanner and distributing the beam of photons at wavelengths in a range from about 345 nm to about 1100 nm onto the surface of the component to form a plurality of features on the component; A system comprising:

2. The system of claim 1 , wherein the lens is configured to distribute the beam of photons perpendicularly toward the surface of the component.

3. The system of claim 1 , wherein the component is disposed between the lens and the support.

4. The system of claim 3 , wherein the processing area is maintained as a Class 1 environment, and the support surface of the support and the lens are disposed within the Class 1 environment.

5. 5. The system of claim 4, further comprising a conveyor for introducing said components into said Class 1 environment or removing said components from said Class 1 environment.

6. The system of claim 4 , wherein the processing region comprises a pressure approximately equal to atmospheric pressure.

7. The system of claim 1 , wherein the beam scanner is configured to scan the beam of photons across the surface of the component using a line-by-line pattern or a sparrow pattern.

8. The system of claim 1 , wherein the optical module is configured to pulse the beam of photons while scanning the beam of photons over the surface of the component.

9. said beam of photons A beam diameter in the range of about 7 μm to about 100 μm; a pulse width in the range of about 10 ps to about 30 ns; and a pulse repetition rate in the range of about 10 KHz to about 200 KHz; The system of claim 8 , comprising:

10. The system of claim 1 , wherein the features formed include depressions, protuberances, or a combination thereof.

11. 1. A system for providing texture to a surface of a component for use in a semiconductor processing chamber, comprising: an enclosure containing a processing area maintained as a Class 1 environment having a pressure approximately equivalent to atmospheric pressure; a support disposed in the processing area and having a support surface; a photon source for generating a stream of photons; an optical module operatively coupled to said photon source to receive said stream of photons from said photon source, a beam modulator for generating a beam of photons from the stream of photons generated from the photon source; and a beam scanner for scanning the beam of photons onto the surface of the component; An optical module comprising: a lens positioned at the processing region to receive the beam of photons from the beam scanner and distribute the beam of photons at wavelengths ranging from about 345 nm to about 1100 nm onto the surface of the component to form a plurality of features on the component; A system comprising:

12. The system of claim 1 or 11, wherein the lens is configured to distribute the beam of photons horizontally towards the surface of the component.

13. 13. The system of claim 1 , further comprising a controller configured to vary at least one of a wavelength, a pulse width, a pulse frequency, a repetition rate, a translation speed, a power level, and a beam size of the beam of photons during scanning of the beam of photons.

14. 1. A component for use in a semiconductor processing chamber, the component comprising: A surface comprising one or more holes, a first surface area defined by a first outer boundary, and a second surface area defined by a second outer boundary, the first surface area being smaller than the second surface area; and A plurality of features formed on the surface within the first outer boundary. wherein the plurality of features are formed using a beam of photons scanned across the surface within the first outer boundary, the plurality of features forming a periodic profile defining a surface morphology including repeating square shapes, the plurality of features including depressions, ridges or combinations thereof that collectively form a plurality of passages allowing the passage of a gas.

15. 15. The component of claim 14, wherein the beam of photons is pulsed while being scanned across the first surface area defined by the first outer boundary to form the plurality of features.

16. The component of claim 14 , wherein a ratio of the first surface area to the second surface area is at least 0.

6.

17. The component of claim 14 , wherein the component comprises an electrostatic chuck.

18. The component of claim 14 , wherein the surface morphology has an arithmetic mean roughness profile of about 60 μin to about 360 μin.

19. 15. The component of claim 14, wherein the maximum variation in height from the lowest depression to the highest protuberance is in the range of 4,000 nm to 4,500 nm.

20. 1. A gas distribution showerhead for use in a semiconductor processing chamber, the gas distribution showerhead comprising: A surface comprising one or more holes, a first surface area defined by a first outer boundary, and a second surface area defined by a second outer boundary, the first surface area being smaller than the second surface area; and A plurality of features formed on the surface within the first outer boundary.

13. A gas distribution showerhead comprising: a plurality of features comprising ridges and depressions with a maximum variation in height from lowest depression to highest ridge in a range of 4,000 nm to 4,500 nm, the plurality of features formed with a beam of photons scanned across the surface within the first outer boundary, the plurality of features forming a periodic profile defining a surface morphology comprising repeating square shapes, the depressions and the ridges collectively forming a plurality of passages allowing the passage of a gas.

21. 21. The gas distribution showerhead of claim 20, wherein the beam of photons is pulsed while being scanned across the first surface area defined by the first outer boundary to form the plurality of features.

22. 21. The gas distribution showerhead of claim 20, wherein a ratio of the first surface area to the second surface area is at least 0.

6.

23. 21. The gas distribution showerhead of claim 20, wherein the surface morphology has an arithmetic mean roughness profile of about 60 μin to about 360 μin.

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