Inductive coupling antenna, substrate processing device, and substrate processing method

Abstract

To precisely control the plasma distribution inside a processing container.SOLUTION: An inductive coupling antenna comprises: a first antenna part composed of a plurality of first antenna wires spirally disposed; and a second antenna part composed of a plurality of second antenna wires spirally disposed. The first antenna part and the second antenna part form a rectangular plane. Each of the first antenna wires includes: corner constitutive portions disposed at a plurality of corners successively arranged in a circumferential direction of four corners of the rectangular plane; and a first coupling portion connecting the corner constitutive portions. Each of the second antenna wires includes: side constitutive portions disposed on a plurality of sides successively arranged in the circumferential direction of four sides of the rectangular plane; and a second coupling portion connecting the side constitutive portions. Each of the first coupling portions and each of the second coupling portions are configured to individually adjust separation distances from the rectangular plane.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to an inductively coupled antenna, a substrate processing apparatus, and a substrate processing method. [Background technology]

[0002] In a substrate processing apparatus for performing plasma processing on rectangular substrates, the interior of a processing vessel that accommodates the rectangular substrate is partitioned into an antenna chamber and a processing chamber by a dielectric window member. A high-frequency antenna is disposed inside the antenna chamber, and high-frequency power is supplied to the high-frequency antenna to generate an induced electric field inside the processing chamber. The induced electric field excites the processing gas inside the processing chamber to generate plasma.

[0003] The high frequency antenna has a first antenna section and a second antenna section each configured by arranging a plurality of antenna wires in a spiral shape, and the portions of the first antenna section and the second antenna section facing the window member form a rectangular plane corresponding to the rectangular substrate as a whole. The antenna wires of the first antenna section form four corners of the rectangular plane, and the antenna wires of the second antenna section form four sides of the rectangular plane. The strength of the induced electric field in the area facing each corner or side of the rectangular plane is adjusted by individually controlling the magnitude of the high frequency power supplied to the first antenna section and the magnitude of the high frequency power supplied to the second antenna section. This allows the plasma distribution inside the processing chamber to be divided and controlled for each corner or side. (See, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2012-256660 A Summary of the Invention [Problem to be solved by the invention]

[0005] The techniques disclosed herein provide fine control over the plasma distribution inside a process vessel. [Means for solving the problem]

[0006] One aspect of the technology disclosed herein is an inductively coupled antenna that generates plasma by forming an inductive electric field inside a processing vessel that performs plasma processing on a rectangular substrate, the inductively coupled antenna including a first antenna section formed of a plurality of first antenna wires arranged in a spiral shape, and a second antenna section formed of a plurality of second antenna wires arranged in a spiral shape, high frequency power is supplied to the first antenna section and the second antenna section, the first antenna section and the second antenna section form a rectangular plane, the first antenna section forms four corners of the rectangular plane, the second antenna section forms four sides of the rectangular plane, and the first antenna wires are arranged such that the phases of rotation angles around the center of the rectangular plane are different from each other in the circumferential direction of the rectangular plane. each of the first antenna wires has corner constituent portions arranged at at least two of the four corner portions that are aligned in sequence in the circumferential direction, and a first connecting portion connecting the corner constituent portions and arranged so as to avoid the side portion between the two corner portions; each of the second antenna wires has side constituent portions arranged at at least two of the four side portions that are aligned in sequence in the circumferential direction, and a second connecting portion connecting the side constituent portions and arranged so as to avoid the corner portion between the two side portions; and each of the first connecting portion and each of the second connecting portion are configured to be individually adjustable in terms of their distance from the rectangular plane. Effect of the Invention

[0007] According to the technique of the present disclosure, the plasma distribution inside the processing chamber can be precisely controlled. [Brief description of the drawings]

[0008] [Figure 1]1 is a cross-sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment of the technology disclosed herein. [Diagram 2] 2 is a view of the window member in FIG. 1 as viewed from the processing chamber side. [Diagram 3] 2 is a perspective view showing a configuration of a first antenna portion of a high-frequency antenna. FIG. [Figure 4] 4 is a perspective view showing a configuration of a second antenna portion of the high-frequency antenna. FIG. [Diagram 5] 13A and 13B are diagrams for explaining height adjustment mechanisms for each first coupling portion of the first antenna portion and each second coupling portion of the second antenna portion. [Figure 6] 13 is a perspective view showing an example in which the height of each first connecting portion in the first antenna portion is changed. FIG. [Figure 7] 13 is a perspective view showing an example in which the height of each second connecting portion in the second antenna portion is changed. FIG. [Figure 8] 2 is a diagram for explaining an example in which the degree of plasma processing is changed using the antenna unit in FIG. 1. FIG. [Figure 9] 13 is a diagram for explaining a method of selecting a first antenna wire or a second antenna wire having a first connecting portion or a second connecting portion whose height is changed when the degree of plasma processing is changed. FIG. [Figure 10] 13 is a diagram for explaining a method of selecting a first antenna wire or a second antenna wire having a first connecting portion or a second connecting portion whose height is changed when the degree of plasma processing is changed. FIG. [Figure 11] FIG. 13 is a perspective view showing a configuration of a modified example of the first antenna portion of the high-frequency antenna. [Figure 12] 13 is a perspective view showing a configuration of a modified example of the second antenna portion of the high frequency antenna. FIG. [Figure 13] 4 is a diagram showing a connection state between a first antenna wire and a second antenna wire and a terminal for supplying high frequency power. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Meanwhile, as the processing of rectangular substrates becomes finer, it is required to more precisely control the plasma distribution inside the processing chamber.

[0010] However, in the substrate processing apparatus of Patent Document 1, the four corners of the rectangular plane of the radio frequency antenna are configured with the same first antenna unit, and the four sides of the rectangular plane are configured with the same second antenna unit. Therefore, the magnitude of the radio frequency power supplied to each corner of the rectangular plane is the same, and the magnitude of the radio frequency power supplied to each side of the rectangular plane is also the same. As a result, the strength of the induced electric field in the area facing each corner or each side of the rectangular plane cannot be individually adjusted for each corner or each side, and it is difficult to finely control the plasma distribution inside the processing chamber.

[0011] In contrast, the technology disclosed herein changes the impedance of at least one of the multiple antenna lines of the first antenna unit forming each corner, and changes the impedance of at least one of the multiple antenna lines of the second antenna unit forming each side, thereby individually adjusting the strength of the induced electric field in the areas facing each corner or each side of the rectangular plane.

[0012] An embodiment of the technology according to the present disclosure will now be described with reference to the drawings, in which: Fig. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus according to the present embodiment.

[0013] The substrate processing apparatus 10 is used for plasma processing when forming thin film transistors on a rectangular glass substrate for FPD (Flat Panel Display), such as etching of metal films, ITO films, oxide films, etc., and ashing of resist films.

[0014] The substrate processing apparatus 10 has an airtight processing container 11 in a square cylindrical shape, which is made of a conductive material, for example, aluminum whose inner wall surface is anodized, and which accommodates a rectangular substrate G therein. The processing container 11 is disassembled and is grounded by a ground wire 12. The processing container 11 is divided into an antenna chamber 14 and a processing chamber 15 by a window member 13. Therefore, the window member 13 forms the ceiling wall of the processing chamber 15. The window member 13 is made of a ceramic such as Al2O3, or a dielectric material such as quartz.

[0015] A shower housing 16 for supplying a processing gas is fitted into the lower portion of the window member 13. The shower housing 16 is suspended from the ceiling of the processing vessel 11 by a plurality of suspenders (not shown) and supports the window member 13 from below.

[0016] The shower housing 16 is made of a conductive material, for example, aluminum with an anodized surface. A horizontally extending gas flow passage 17 is formed inside the shower housing 16, and the gas flow passage 17 communicates with a plurality of gas discharge holes 18 extending downward.

[0017] Meanwhile, a gas supply pipe 19 communicating with the gas flow path 17 is provided in the center of the upper surface of the window member 13. The gas supply pipe 19 penetrates the ceiling of the processing vessel 11 and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, in the substrate processing apparatus 10, the processing gas supplied from the processing gas supply system 20 is supplied into the shower housing 16 through the gas supply pipe 19, and then discharged into the processing chamber 15 from each gas discharge hole 18.

[0018] A support shelf 21 that protrudes inward is provided between side wall 14a of antenna chamber 14 and side wall 15a of processing chamber 15 in processing vessel 11, and window member 13 is placed on support shelf 21.

[0019] An antenna unit 23 including a radio frequency (RF) antenna 22 (inductively coupled antenna) is disposed inside the antenna chamber 14. When high frequency power is supplied to the high frequency antenna 22, an induction electric field is formed inside the processing chamber 15, and the processing gas inside the processing chamber 15 is excited by this induction electric field to generate plasma.

[0020] A mounting table 24 for mounting a rectangular substrate G thereon is installed at the bottom inside the processing chamber 15 so as to face the high frequency antenna 22 with the window member 13 in between. The mounting table 24 is made of a conductive material, for example, aluminum whose surface has been anodized. The rectangular substrate G mounted on the mounting table 24 is attracted and held to the mounting table 24 by an electrostatic chuck (not shown).

[0021] The mounting table 24 is disposed at the bottom of the processing vessel 11, and is supported by an insulator frame 25 having an opening at the bottom. A sidewall 15a of the processing chamber 15 is provided with a load / unload port 28 for loading / unloading the rectangular substrate G, and a gate valve 29 for opening / closing the load / unload port 28.

[0022] A high frequency power supply 32 is connected to the mounting table 24 via a matching box 31 by a power supply line 30 that passes through an opening in the insulator frame 25. During plasma processing, the high frequency power supply 32 applies high frequency bias power, for example, high frequency power of 3.2 MHz, to the mounting table 24. This high frequency bias power effectively attracts ions in the plasma generated inside the processing chamber 15 to the rectangular substrate G.

[0023] Further, a temperature control mechanism including a heating means such as a ceramic heater and a coolant flow path, as well as a temperature sensor (all not shown) are provided inside the mounting table 24 in order to control the temperature of the rectangular substrate G. The piping and wiring of these mechanisms are all led out to the outside of the processing chamber 11 through the openings of the insulator frame 25. A shield ring may be provided on the upper part of the side wall of the insulator frame 25 that stands upright and covers the side surface of the mounting table 24.

[0024] An exhaust device 34 including a vacuum pump and the like is connected to the bottom of the processing chamber 15 via an exhaust pipe 33. The exhaust device 34 evacuates the processing chamber 15 and maintains the inside of the processing chamber 15 in a vacuum atmosphere of a predetermined pressure (e.g., 1.33 Pa) during plasma processing.

[0025] An extremely thin cooling space (not shown) is formed between the rear surface of the rectangular substrate G placed on the mounting table 24 and the mounting surface of the mounting table 24, and the mounting table 24 is provided with a heat transfer gas flow path 35 for supplying a heat transfer gas to the cooling space. By supplying a heat transfer gas to the cooling space on the rear surface of the rectangular substrate G, the temperature of the rectangular substrate G can be adjusted by the temperature control mechanism even if the inside of the processing chamber 15 is a vacuum atmosphere.

[0026] Each component of the substrate processing apparatus 10 is controlled by a control unit 36 ​​consisting of a microprocessor (computer). A keyboard (not shown) for receiving input operations from an operator and a user interface 37 for displaying the operating status of the substrate processing apparatus 10 are connected to the control unit 36. Furthermore, a storage unit 38 is connected to the control unit 36, and when various plasma processes are performed, the control unit 36 ​​controls each component of the substrate processing apparatus 10 according to the process recipes stored in the storage unit 38.

[0027] Next, the antenna unit 23 will be described in detail. Fig. 2 is a view of the window member 13 in Fig. 1 viewed from the processing chamber 15 side, with the high frequency antenna 22 of the antenna unit 23 arranged in the antenna chamber 14 shown by a dashed line so as to be visible. Fig. 3 is a perspective view showing the configuration of a first antenna portion 39 of the high frequency antenna 22, and Fig. 4 is a perspective view showing the configuration of a second antenna portion 40 of the high frequency antenna 22.

[0028] The high frequency antenna 22 of the antenna unit 23 is composed of a first antenna section 39, a second antenna section 40, and a third antenna section 41. The first antenna section 39 is composed of a plurality of, for example, four spirally arranged first antenna wires 39a to 39d. The second antenna section 40 is composed of a plurality of, for example, four spirally arranged second antenna wires 40a to 40d. The third antenna section 41 is composed of a plurality of, for example, four spirally arranged third antenna wires. At this time, the first antenna section 39 and the second antenna section 40 are arranged so as to face the peripheral portion of the window member 13, and the third antenna section 41 is arranged so as to face the central portion of the window member 13. The first antenna section 39, the second antenna section 40, and the third antenna section 41 form a rectangular plane.

[0029] For example, as shown in FIG. 2, the window member 13 is divided into four corner areas A to D (corner area group) corresponding to the four corners, four side areas A to D (side area group) corresponding to the four sides sandwiched between two adjacent corners, and an inner area corresponding to the center. In this case, the first antenna unit 39 is arranged to face the corner areas A to D, the second antenna unit 40 is arranged to face the side areas A to D, and the third antenna unit 41 is arranged to face the inner area. That is, the first antenna unit 39 forms the four corners of a rectangular plane, the second antenna unit 40 forms the four sides of the rectangular plane, and the third antenna unit 41 forms the center of the rectangular plane. In this embodiment, the symbols A, B, C, and D (a, b, c, d) are circulated in this order, and A (a) follows D (d). For example, C to A indicates that the order is C, D, and A.

[0030] As shown in FIG. 3, the four first antenna wires 39a-39d of the first antenna unit 39 are arranged in a spiral shape such that the phases of the rotation angles of the first antenna wires 39a-39d are shifted from each other, for example, by 90°, with the center of the rectangular plane (the intersection of two diagonals of the rectangle) as the center of rotation, in the circumferential direction of the rectangular plane. Each of the first antenna wires 39a-39d has a starting point in a different corner area from each other. Specifically, the first antenna wire 39a has a starting point in corner area A, the first antenna wire 39b has a starting point in corner area B, the first antenna wire 39c has a starting point in corner area C, and the first antenna wire 39d has a starting point in corner area D. Also, each of the first antenna wires 39a-39d has an ending point in a different corner area from each other. Specifically, the first antenna line 39a has an end point in corner area C, the first antenna line 39b has an end point in corner area D, the first antenna line 39c has an end point in corner area A, and the first antenna line 39d has an end point in corner area B.

[0031] The first antenna wire 39a has corner constituent portions 39aa-39ac facing the corner areas A-C arranged in order in the circumferential direction of the rectangular plane, and a first coupling portion 39a1 connecting the corner constituent portion 39aa and the corner constituent portion 39ab. The first antenna wire 39a also has a first coupling portion 39a2 connecting the corner constituent portion 39ab and the corner constituent portion 39ac.

[0032] The first antenna wire 39b has corner constituent portions 39bb-39bd facing the corner areas B-D arranged in order in the circumferential direction of the rectangular plane, and a first coupling portion 39b1 connecting the corner constituent portion 39bb and the corner constituent portion 39bc. The first antenna wire 39b also has a first coupling portion 39b2 connecting the corner constituent portion 39bc and the corner constituent portion 39bd.

[0033] The first antenna wire 39c has corner constituent portions 39cc to 39ca facing the corner areas C to A arranged in order in the circumferential direction of the rectangular plane, and a first coupling portion 39c1 connecting the corner constituent portion 39cc and the corner constituent portion 39cd. The first antenna wire 39c also has a first coupling portion 39c2 connecting the corner constituent portion 39cd and the corner constituent portion 39ca.

[0034] The first antenna wire 39d has corner constituent portions 39dd-39db facing the corner areas D-B arranged in order in the circumferential direction of the rectangular plane, and a first coupling portion 39d1 connecting the corner constituent portion 39dd and the corner constituent portion 39da. The first antenna wire 39d also has a first coupling portion 39d2 connecting the corner constituent portion 39da and the corner constituent portion 39db.

[0035] As shown in Fig. 4, the four second antenna wires 40a to 40d of the second antenna unit 40 are arranged in a spiral shape so that the phases of the rotation angles around the center of the rectangular plane are shifted from each other, for example, by 90°, in the circumferential direction of the rectangular plane. Each of the second antenna wires 40a to 40d has a starting point in a different side area from each other. Specifically, the second antenna wire 40a has a starting point in side area A, the second antenna wire 40b has a starting point in side area B, the second antenna wire 40c has a starting point in side area C, and the second antenna wire 40d has a starting point in side area D. Also, each of the second antenna wires 40a to 40d has an end point in a different side area from each other. Specifically, the second antenna line 40a has an end point in side area B, the second antenna line 40b has an end point in side area C, the second antenna line 40c has an end point in side area D, and the second antenna line 40d has an end point in side area A.

[0036] The second antenna wire 40a has side constituent portions 40aa, 40ab facing side areas A, B arranged in sequence in the circumferential direction of the rectangular plane, and a second coupling portion 40a1 connecting the side constituent portion 40aa and the side constituent portion 40ab. The second antenna wire 40b has side constituent portions 40bb, 40bc facing side areas B, C arranged in sequence in the circumferential direction of the rectangular plane, and a second coupling portion 40b1 connecting the side constituent portion 40bb and the side constituent portion 40bc.

[0037] The second antenna wire 40c has side constituent portions 40cc, 40cd facing side areas C, D arranged in sequence in the circumferential direction of the rectangular plane, and a second coupling portion 40c1 connecting the side constituent portion 40cc and the side constituent portion 40cd. The second antenna wire 40d has side constituent portions 40dd, 40da facing side areas D, A arranged in sequence in the circumferential direction of the rectangular plane, and a second coupling portion 40d1 connecting the side constituent portion 40dd and the side constituent portion 40da.

[0038] In the high frequency antenna 22, the first connecting portions 39a1 and 39d2 of the first antenna portion 39 are disposed above the side constituent portions 40aa and 40da so as to avoid the side constituent portions 40aa and 40da of the second antenna portion 40. The first connecting portions 39b1 and 39a2 of the first antenna portion 39 are disposed above the side constituent portions 40bb and 40ab so as to avoid the side constituent portions 40bb and 40ab of the second antenna portion 40. The first connecting portions 39c1 and 39b2 of the first antenna portion 39 are disposed above the side constituent portions 40cc and 40bc so as to avoid the side constituent portions 40cc and 40bc of the second antenna portion 40. The first connecting portions 39d1 and 39c2 of the first antenna portion 39 are disposed above the side constituent portions 40dd and 40cd so as to avoid the side constituent portions 40dd and 40cd of the second antenna portion 40.

[0039] Furthermore, the corner component 39aa has a first extension portion 39aw that extends vertically upward at one end (end portion) so as to move away from the rectangular plane. The corner component 39ab has first extension portions 39ax, 39ay that extend vertically upward at both ends (end portions) so as to move away from the rectangular plane. The corner component 39ac has a first extension portion 39az that extends vertically upward at one end so as to move away from the rectangular plane. The corner component 39bb has a first extension portion 39bw that extends vertically upward at one end so as to move away from the rectangular plane. The corner component 39bc has first extension portions 39bx, 39by that extend vertically upward at both ends so as to move away from the rectangular plane. The corner component 39bd has a first extension portion 39bz that extends vertically upward at one end so as to move away from the rectangular plane. The corner component 39cc has a first extension 39cw extending vertically upward at one end so as to move away from the rectangular plane. The corner component 39cd has first extensions 39cx, 39cy extending vertically upward at both ends so as to move away from the rectangular plane. The corner component 39ca has a first extension 39cz extending vertically upward at one end so as to move away from the rectangular plane. The corner component 39dd has a first extension 39dw extending vertically upward at one end so as to move away from the rectangular plane. The corner component 39da has first extensions 39dx, 39dy extending vertically upward at both ends so as to move away from the rectangular plane. The corner component 39db has a first extension 39dz extending vertically upward at one end so as to move away from the rectangular plane.

[0040] The first connecting portion 39a1 is attached to the first extending portion 39aw and the first extending portion 39ax, and the first connecting portion 39a2 is attached to the first extending portion 39ay and the first extending portion 39az. The first connecting portion 39b1 is attached to the first extending portion 39bw and the first extending portion 39bx, and the first connecting portion 39b2 is attached to the first extending portion 39by and the first extending portion 39bz. The first connecting portion 39c1 is attached to the first extending portion 39cw and the first extending portion 39cx, and the first connecting portion 39c2 is attached to the first extending portion 39cy and the first extending portion 39cz. The first connecting portion 39d1 is attached to the first extending portion 39dw and the first extending portion 39dx, and the first connecting portion 39d2 is attached to the first extending portion 39dy and the first extending portion 39dz.

[0041] In the high frequency antenna 22, the second coupling portion 40a1 of the second antenna portion 40 is disposed above the corner components 39bb, 39ab, and 39db so as to avoid the corner components 39bb, 39ab, and 39db of the first antenna portion 39. The second coupling portion 40b1 of the second antenna portion 40 is disposed above the corner components 39cc, 39bc, and 39ac of the first antenna portion 39 so as to avoid the corner components 39cc, 39bc, and 39ac of the first antenna portion 39. The second coupling portion 40c1 of the second antenna portion 40 is disposed above the corner components 39dd, 39cd, and 39bd of the first antenna portion 39 so as to avoid the corner components 39dd, 39cd, and 39bd of the first antenna portion 39. The second coupling portion 40d1 of the second antenna portion 40 is disposed above the corner constituent portions 39aa, 39da, and 39ca of the first antenna portion 39 so as to avoid the corner constituent portions 39aa, 39da, and 39ca.

[0042] Furthermore, the side component 40aa has a second extension portion 40ay extending vertically upward at one end away from the rectangular plane, and the side component 40ab has a second extension portion 40az extending vertically upward at one end away from the rectangular plane. The side component 40bb has a second extension portion 40by extending vertically upward at one end away from the rectangular plane, and the side component 40bc has a second extension portion 40bz extending vertically upward at one end away from the rectangular plane. The side component 40cc has a second extension portion 40cy extending vertically upward at one end away from the rectangular plane, and the side component 40cd has a second extension portion 40cz extending vertically upward at one end away from the rectangular plane. The side component 40dd has a second extending portion 40dy extending vertically upward at one end so as to move away from the rectangular plane, and the side component 40da has a second extending portion 40dz extending vertically upward at one end so as to move away from the rectangular plane.

[0043] The second connecting portion 40a1 is attached to the second extending portion 40ay and the second extending portion 40az, the second connecting portion 40b1 is attached to the second extending portion 40by and the second extending portion 40bz, the second connecting portion 40c1 is attached to the second extending portion 40cy and the second extending portion 40cz, and the second connecting portion 40d1 is attached to the second extending portion 40dy and the second extending portion 40dz.

[0044] In the high-frequency antenna 22, the first coupling parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 of the first antenna part 39 are configured so that their heights (distances from a rectangular plane) can be adjusted individually. The second coupling parts 40a1, 40b1, 40c1, and 40d1 of the second antenna part 40 are also configured so that their heights (distances from a rectangular plane) can be adjusted individually.

[0045] Fig. 5 is a diagram for explaining a height adjustment mechanism for the first connecting portion 39a1 etc. of the first antenna portion 39 and the second connecting portion 40a1 etc. of the second antenna portion 40. Note that Fig. 5 shows the attachment structure of the first connecting portion 39a1 to the first extending portion 39aw and the first extending portion 39ax, but the attachment structures of the other first connecting portions 39a2 etc. and the second connecting portion 40a1 etc. also have the same configuration.

[0046] 5, the first extending portion 39aw and the first extending portion 39ax are provided with a plurality of mounting holes 42 arranged along the height direction. The first connecting portion 39a1 has mounting portions 39a1a and 39a1b extending downward from both ends, and the mounting portions 39a1a and 39a1b are also provided with a plurality of, for example, two, mounting holes 43 arranged along the height direction.

[0047] When attaching the first connecting portion 39a1 to the first extending portion 39aw or the first extending portion 39ax, the positions of the two mounting holes 43 are aligned with the positions of two of the multiple mounting holes 42, and a bolt 44 inserted through the mounting holes 42, 43 is fastened with a nut 45. At this time, by changing the two mounting holes 42 that are aligned with the two mounting holes 43, it is possible to change the mounting position of the first connecting portion 39a1 relative to the first extending portion 39aw or the first extending portion 39ax, i.e., the height of the first connecting portion 39a1.

[0048] In addition, as long as the attachment position of the first connecting portion 39a1 relative to the first extension portion 39aw or the first extension portion 39ax can be changed, the attachment structure of the first connecting portion 39a1 to the first extension portion 39aw or the first extension portion 39ax is not limited to the structure shown in FIG. 5.

[0049] 3 shows a case where the heights of the first connecting parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 of the first antenna part 39 are set to the standard height. The standard height here may be, for example, the height when the first connecting part 39a1 is attached to the mounting hole 42 that is located in the center in the height direction among the multiple mounting holes 42. In addition, the height of the first connecting part 39a1 when attached to the lowest mounting hole 42 is equal to or higher than the height at which the electric field generated by the high-frequency current flowing through the first connecting part 39a1 does not affect the induced electric field generated inside the processing chamber 15.

[0050] However, as described above, the heights of the first connecting parts 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 can be adjusted individually. For example, it is possible to set the height of the first connecting part 39a1 lower than the standard height, the height of the first connecting part 39b1 higher than the standard height, the height of the first connecting part 39c1 higher than the standard height, and the height of the first connecting part 39d1 lower than the standard height (see FIG. 6).

[0051] 4 shows a case where the heights of the second connecting parts 40a1, 40b1, 40c1, and 40d1 of the second antenna part 40 are set to the standard height. The standard height here may also be, for example, the height when the second connecting part 40a1 is attached to the mounting hole 42 that is located in the center in the height direction among the multiple mounting holes 42. The height of the second connecting part 40a1 when attached to the lowest mounting hole 42 is equal to or higher than the height at which the electric field generated by the high-frequency current flowing through the second connecting part 40a1 does not affect the induced electric field generated inside the processing chamber 15.

[0052] However, as described above, the heights of the second connecting parts 40a1, 40b1, 40c1, and 40d1 can also be adjusted individually. For example, it is possible to set the height of the second connecting part 40a1 higher than the standard height, the height of the second connecting part 40b1 lower than the standard height, the height of the second connecting part 40c1 lower than the standard height, and the height of the second connecting part 40d1 higher than the standard height (see FIG. 7).

[0053] Power is fed to the first antenna unit 39 via four terminals 46 connected to the four first antenna wires 39a to 39d, respectively. FIG. 13(A) illustrates the connection between the first antenna wire 39a and the terminal 46. The connection between each of the first antenna wires 39b, 39c, and 39d and the terminal 46 also has a similar configuration. Power is fed to the second antenna unit 40 via four terminals 47 connected to each of the four second antenna wires 40a to 40d, respectively. FIG. 13(B) illustrates the connection between the second antenna wire 40a and the terminal 47. The connection between each of the second antenna wires 40b, 40c, and 40d and the terminal 47 also has a similar configuration.

[0054] A first power supply member 48 is connected to each terminal 46 of the first antenna unit 39, and a second power supply member 49 is connected to each terminal 47 of the second antenna unit 40 (only one first power supply member 48 and one second power supply member 49 are shown in FIG. 1). Each first power supply member 48 is connected to a power supply line 50, and each second power supply member 49 is connected to a power supply line 51. The power supply line 50 and the power supply line 51 branch off from a power supply line 57, and a matching unit 52 and a first high frequency power supply 53 are connected to the power supply line 57. Thus, high frequency power having a frequency of, for example, 13.56 MHz is supplied from the first high frequency power supply 53 to the first antenna unit 39 and the second antenna unit 40, respectively. Although not shown, high frequency power having a frequency of, for example, 13.56 MHz is also supplied from the first high frequency power supply 53 to each of the third antenna lines of the third antenna unit 41 via a power supply line branched from the power supply line 57. In the substrate processing apparatus 10, variable capacitances (not shown) are provided in any two of the three power supply lines that supply high frequency power to each of the first antenna unit 39, the second antenna unit 40, and the third antenna unit 41. The control unit 36 ​​controls these variable capacitances to control the ratio of the high frequency power supplied to the first antenna unit 39, the second antenna unit 40, and the third antenna unit 41. The variable capacitances may be provided in all three power supply lines. Any two of the three power supply lines and the other one may be connected to different high frequency power supplies, or each of the three power supply lines may be connected to a separate high frequency power supply.

[0055] Moreover, the high frequency antenna 22 is disposed at a distance from the window member 13 by a spacer 56 made of an insulating material, and its disposition area corresponds to the rectangular substrate G.

[0056] In the substrate processing apparatus 10, the strength of the induced electric field generated in the area facing the corner areas A to D (corner area group) and the side areas A to D (side area group) can be independently adjusted by controlling the ratio of the high frequency power supplied to the first antenna unit 39 and the second antenna unit 40. Also, the strength of the induced electric field generated in the area facing the inner area can be independently adjusted by controlling the ratio of the high frequency power supplied to the third antenna unit 41. This allows the plasma distribution inside the processing chamber 15 to be controlled separately for the corner area group, the side area group, and the inner area.

[0057] In this embodiment, the heights of the first connecting portions 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 are individually adjustable, and the heights of the second connecting portions 40a1, 40b1, 40c1, and 40d1 are also individually adjustable.

[0058] For example, when the height of the first connecting portion 39a1 is changed, the length of the first antenna line 39a changes, and the impedance of the first antenna line 39a changes. When the impedance of the first antenna line 39a changes, the high-frequency current flowing through the first antenna line 39a changes when high-frequency power is supplied from the first high-frequency power source 53 to the first antenna unit 39. When the high-frequency current flowing through the first antenna line 39a changes, the strength of the induced electric field generated in the area (corner area A, corner area B, corner area C) facing the first antenna line 39a also changes. The change in the strength of the induced electric field also changes the state of the plasma, such as the plasma density in the facing area. Similarly, the heights of the corresponding first connecting portions 39b1, c1, d1 of the first antenna lines 39b, 39c, 39d can be changed to change the strength of the induced electric field in the facing area, and change the state of the plasma. That is, the plasma distribution can be controlled by dividing it into regions facing the first antenna wires 39a to 39d.

[0059] For example, by changing the height of the second connecting portion 40a1, the impedance of the second antenna line 40a can be changed for the same reason, and the strength of the induced electric field generated in the area (side area A, side area B) facing the second antenna line 40a can also be changed. Similarly, by changing the heights of the second connecting portions 40b1, c1, and d1, the strength of the induced electric field in the area facing each of the second antenna lines 40b, 40c, and 40d can be changed. This allows the plasma distribution to be divided and controlled in the areas facing each of the second antenna lines 40a to 40d.

[0060] That is, in this embodiment, by changing the heights of the first connecting portions 39a1-39d2 and the second connecting portions 40a1-40d1, it is possible to control the plasma distribution by dividing the area more finely than the corner area group, side area group, and inner area.

[0061] For example, as shown in FIG. 6, when the height of the first connecting portion 39a1 is made lower than the standard height, the length of the first antenna line 39a is shortened, so that the impedance of the first antenna line 39a is reduced and the high-frequency current flowing through the first antenna line 39a is increased. At this time, the induced electric field generated in the corner areas A, B, and C, which are the areas facing the first antenna line 39a, is strengthened and the plasma density is increased. As a result, the degree of plasma processing applied to the parts of the rectangular substrate G facing the corner areas A, B, and C can be strengthened. For example, in the plasma etching process, the etching rate of an oxide film or the like can be increased, and in the ashing process, the ashing rate of a resist or the like can be increased. Similarly, when the height of the first connecting portion 39d1 is made lower than the standard height, the impedance of the first antenna line 39d is reduced and the degree of plasma processing applied to the parts of the rectangular substrate G facing the corner areas D, A, and B can be strengthened.

[0062] Also, as shown in the example of FIG. 6, when the height of the first connecting portion 39b1 is made higher than the standard height, the length of the first antenna line 39b is increased, so that the impedance of the first antenna line 39b is increased and the high frequency current flowing through the first antenna line 39b is decreased. At this time, the induced electric field generated in the corner areas B, C, and D, which are the areas facing the first antenna line 39b, is weakened and the plasma density is reduced. As a result, the degree of plasma processing applied to the parts of the rectangular substrate G facing the corner areas B, C, and D, which are the areas facing the first antenna line 39b, can be weakened. For example, in the etching process of an oxide film or the like using plasma, the etching rate can be lowered, and in the ashing process, the ashing rate of the resist or the like can be lowered. Similarly, when the height of the first connecting portion 39c1 is made higher than the standard height, the impedance of the first antenna line 39c is increased, so that the degree of plasma processing applied to the parts of the rectangular substrate G facing the corner areas C, D, and A can be weakened.

[0063] Furthermore, for example, as shown in FIG. 7, when the height of the second connecting portion 40a1 is made higher than the standard height, the length of the second antenna line 40a is increased, so that the impedance of the second antenna line 40a is increased and the high frequency current flowing through the second antenna line 40a is decreased. At this time, the induced electric field generated in the side areas A and B, which are the areas facing the second antenna line 40a, is weakened and the plasma density is reduced. As a result, the degree of plasma treatment applied to the portion of the rectangular substrate G facing the side areas A and B can be weakened. Similarly, when the height of the second connecting portion 40d1 is made higher than the standard height, the impedance of the second antenna line 40d is increased and the degree of plasma treatment applied to the portion of the rectangular substrate G facing the side areas D and A can be weakened.

[0064] Also, as shown in FIG. 7, when the height of the second connecting portion 40b1 is made lower than the standard height, the length of the second antenna line 40b is shortened, so that the impedance of the second antenna line 40b is reduced and the high frequency current flowing through the second antenna line 40b is increased. At this time, the induced electric field generated in the side areas B and C, which are the areas facing the second antenna line 40b, is strengthened and the plasma density is increased. As a result, the degree of plasma treatment applied to the portion of the rectangular substrate G facing the side areas B and C, which are the areas facing the second antenna line 40b, can be strengthened. Similarly, when the height of the second connecting portion 40c1 is made lower than the standard height, the impedance of the second antenna line 40c is reduced and the degree of plasma treatment applied to the portion of the rectangular substrate G facing the side areas C and D can be strengthened.

[0065] In this manner, in this embodiment, the plasma distribution inside the processing chamber 15 can be controlled by dividing it into smaller areas than the corner area group, side area group, and inner area, for example, into corner areas A, B, and C and side areas A and B. That is, the plasma distribution inside the processing chamber 15 can be controlled in detail.

[0066] In this embodiment, the heights of the first connecting portions 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 can be reduced, and the heights of the second connecting portions 40a1, 40b1, 40c1, and 40d1 can also be reduced.

[0067] However, for example, if the height of the first connecting portion 39a1 is too low, the high frequency current flowing through the first connecting portion 39a1 may affect the induced electric field generated inside the processing chamber 15. Therefore, the adjustable height range (adjustment range) of the first connecting portion 39a1 is limited to a range in which the high frequency current flowing through the first connecting portion 39a1 does not affect the induced electric field generated inside the processing chamber 15. Specifically, the lowest positions of the mounting holes 42 of the first extending portions 39aw and 39ax are set so that the height of the first connecting portion 39a1 is not lower than 100 mm. Similarly, the lowest positions of the heights of the first connecting portions 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 and the second connecting portions 40a1, 40b1, 40c1, and 40d1 are also set so that they are not lower than 100 mm.

[0068] In this way, even if the height of the first connecting portion 39a1 etc. and the second connecting portion 40a1 etc. is changed, it does not affect the induction electric field generated inside the processing chamber 15. Therefore, when the height of the first connecting portion 39a1 etc. and the second connecting portion 40a1 etc. is changed to control the plasma distribution inside the processing chamber 15, the plasma distribution does not change unintentionally. This makes it easier to finely adjust the plasma distribution.

[0069] In this embodiment, for example, the first connecting portion 39a1 is fastened to the first extending portions 39aw and 39ax by the bolts 44 and nuts 45, and therefore can be easily removed from the first extending portions 39aw and 39ax. Therefore, the height of the first connecting portion 39a1 can be easily changed, and the plasma distribution can be easily adjusted. Similarly, the first connecting portions 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, and 39d2 and the second connecting portions 40a1, 40b1, 40c1, and 40d1 can also be easily removed from the corresponding first extending portions and first extending portions. The fastening means is not limited to the bolts 44 and nuts 45, and any means that can be easily removed can be used.

[0070] Fig. 8 is a diagram for explaining an example in which the degree of plasma processing is changed using the antenna unit 23 in Fig. 1. Fig. 8 shows an example in which an ashing process is performed as plasma processing on a rectangular substrate G in the substrate processing apparatus 10 in which the heights of the first and second connecting parts of the first and second antenna parts 39 and 40 are set to standard heights. For evaluation, in this example, small pieces coated with resist were placed on multiple locations of the rectangular substrate G, and the ashing rate of the resist of each small piece was measured.

[0071] 8A shows the distribution of ashing rates (AR) in an ashing process performed in the substrate processing apparatus 10 in which the heights of the first and second connecting portions of the first and second antenna portions 39 and 40 are set to standard heights. In FIG. 8A, the distribution of ashing rates corresponding to each area of ​​the window member 13 is shown.

[0072] 8A, the ashing rate was higher toward the corner area C and lower toward the corner area A. Therefore, in order to improve the distribution of the ashing rate, it was necessary to reduce the ashing rate in the vicinity of the corner area C.

[0073] Therefore, the impedance of the second antenna wire 40b having the side area B adjacent to the corner area C and the side constituent portion 40bb and the side constituent portion 40bc (see FIG. 8(B)) facing the side area C was increased. Specifically, the height of the second coupling portion 40b1 of the second antenna wire 40b was made higher than the standard height.

[0074] Thereafter, the rectangular substrate G was subjected to an ashing process in the substrate processing apparatus 10. Fig. 8(C) shows the rate of change in the ashing rate at each portion when the height of the second connecting portion 40b1 was increased from the standard height. As shown in Fig. 8(C), it was confirmed that the ashing rate in the vicinity of the corner area C was reduced.

[0075] As another method, the impedance of the first antenna wire 39b having the corner component 39bc (see FIG. 8(D)) facing the corner area C was increased. Specifically, the height of the first coupling portion 39b1 and the first coupling portion 39b2 of the first antenna wire 39b was made higher than the standard height.

[0076] Thereafter, the rectangular substrate G was subjected to an ashing process in the substrate processing apparatus 10. Fig. 8(E) shows the rate of change in the ashing rate at each portion when the height of the first connecting portion 39b1 and the height of the first connecting portion 39b2 were increased from the standard height. As shown in Fig. 8(E), it was confirmed that the ashing rate in the vicinity of the corner area C, especially in the side area B, was reduced.

[0077] As described above, it was found that the ashing rate distribution can be improved by locally changing the ashing rate by changing the height of part of each of the first connecting portions and each of the second connecting portions of the first antenna portion 39 and the second antenna portion 40. It was also found that, when changing the ashing rate in the same area, multiple methods can be used, as shown in Figures 8(B) and 8(D).

[0078] In addition, in order to improve the distribution of the ashing rate, the impedance of not only one antenna line but also multiple antenna lines may be adjusted. As in FIG. 8(A), when the ashing rate is higher toward the corner area C and lower toward the corner area A (see FIG. 9(A)), it is necessary to lower the ashing rate in the vicinity of the corner area C. Therefore, in order to increase the impedance of the second antenna line 40b having the side area B adjacent to the corner area C and the side constituent portion 40bb and the side constituent portion 40bc (see FIG. 9(B)) facing the side area C, the height of the second connecting portion 40b1 may be made higher than the standard height. The example of FIG. 9(B) is a method of adjusting the ashing rate by adjusting the impedance of one antenna line, as in the example of FIG. 8(B). In contrast, not only the impedance of the second antenna line 40b but also the impedance of the first antenna line 39b having the corner constituent portion 39bc (see FIG. 9(C)) facing the corner area C may be increased. In this case, not only the second connecting portion 40b1 but also the first connecting portion 39b1 and the first connecting portion 39b2 are made higher than the standard height. The example of Fig. 9(C) is a method of adjusting the ashing rate by adjusting the impedance of multiple antenna lines.

[0079] Also, for example, as shown in FIG. 9(D), if the ashing rate is higher toward the side area B and lower toward the side area D, it is necessary to reduce the ashing rate in the vicinity of the side area B. Therefore, the impedance of the second antenna wire 40b or the second antenna wire 40a having the side constituent portion 40bb or the side constituent portion 40ab (see FIG. 9(E)) facing the side area B may be increased. In this case, the height of the second connecting portion 40b1 or the second connecting portion 40a1 is made higher than the standard height. Also, the impedance of the first antenna wire 39b or the first antenna wire 39a having the corner constituent portion 39bb, the corner constituent portion 39ab, the corner constituent portion 39ac, or the corner constituent portion 39bc (see FIG. 9(F)) facing the corner area B or the corner area C adjacent to the side area B may be increased. In this case, the heights of the first connecting portions 39a1, 39a2, 39b1 and 39b2 are made higher than the standard height.

[0080] Furthermore, for example, as shown in FIG. 10(A), if the ashing rate is higher toward the corner area B and lower toward the corner area D, it is necessary to reduce the ashing rate in the vicinity of the corner area B. Therefore, the impedance of the second antenna wire 40a having the side area A adjacent to the corner area B and the side constituent portion 40aa and the side constituent portion 40ab (see FIG. 10(B)) facing the side area B may be increased. In this case, the height of the second connecting portion 40a1 is made higher than the standard height. In addition to the impedance of the second antenna wire 40a, the impedance of the first antenna wire 39a having the corner constituent portion 39ab (see FIG. 10(C)) facing the corner area B may be increased. In this case, the height of the first connecting portion 39a1 and the first connecting portion 39a2 as well as the second connecting portion 40a1 are made higher than the standard height.

[0081] Also, for example, as shown in FIG. 10(D), if the ashing rate is higher toward the side area A and lower toward the side area C, it is necessary to reduce the ashing rate in the vicinity of the side area A. Therefore, the impedance of the second antenna wire 40a or the second antenna wire 40d having the side constituent portion 40aa or the side constituent portion 40da (see FIG. 10(E)) facing the side area A may be increased. In this case, the height of the second connecting portion 40a1 or the second connecting portion 40d1 is made higher than the standard height. Also, the impedance of the first antenna wire 39a or the first antenna wire 39d having the corner constituent portion 39aa, the corner constituent portion 39da, the corner constituent portion 39ab, or the corner constituent portion 39db (see FIG. 10(F)) facing the corner area A or the corner area B adjacent to the side area A may be increased. In this case, the heights of the first connecting portions 39a1, 39a2, 39d1 and 39d2 are made higher than the standard height.

[0082] In this way, when the ashing rate is to be reduced, the height of the first and second connecting parts of the first and second antenna wires having the corner and side components facing the corresponding area may be made higher than the standard height. On the other hand, when the ashing rate is to be improved, the height of the first and second connecting parts of the first and second antenna wires having the corner and side components facing the corresponding area may be made lower than the standard height. In this case, the impedance of the first and second antenna wires decreases and the high frequency current increases, and accordingly, the induced electric field in the opposing area becomes stronger, the plasma density increases, and the ashing rate improves.

[0083] Furthermore, each of the first antenna lines 39a to 39d has two first connecting parts, but when changing the impedance, it is not necessary to make the heights of the two first connecting parts the same, and the two first connecting parts may be set to different heights. Also, it is not necessary to change the heights of both of the two first connecting parts, and it is sufficient to change the height of only one of the connecting parts.

[0084] Furthermore, when changing the impedance of the first antenna line or the second antenna line, the amount of change in the height of the first connecting part or the second connecting part is changed according to the required change in impedance. For example, when a large change in impedance is required, the amount of change in the height of the first connecting part or the second connecting part is increased. On the other hand, when a large change in impedance is not required, the amount of change in the height of the first connecting part or the second connecting part is decreased.

[0085] Although the preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications and changes are possible within the scope of the gist of the present disclosure.

[0086] For example, each of the second antenna wires 40a to 40d has two side components corresponding to two side areas, but may have three side components corresponding to three side areas. In this case, each of the second antenna wires 40a to 40d has two second connecting parts. The number of side areas to which each of the second antenna wires 40a to 40d corresponds is not limited to two or three. In addition, when the number of corresponding side areas is four and the second antenna wires 40a to 40d make one revolution in the circumferential direction of the rectangular plane, the strength of the induced electric field changes in the same manner in all side areas. However, even when the number of corresponding side areas is four and the second antenna wires 40a to 40d make one revolution, if each of the second antenna wires 40a to 40d is arranged more than one revolution and the antenna wire corresponds to two or three side areas in the final revolution, the strength of the induced electric field in the corresponding side area can be selectively changed.

[0087] Further, each of the first antenna wires 39a to 39d has three corner components corresponding to three corner areas, but may have only two corner components corresponding to two corner areas. The number of corner areas to which the first antenna wires 39a to 39d correspond is not limited to three or two. Furthermore, when the number of corresponding corner areas is four and the first antenna wires 39a to 39d make one revolution in the circumferential direction of the rectangular plane, the strength of the induced electric field changes in the same manner in all corner areas. However, even when the number of corresponding corner areas is four and the first antenna wires 39a to 39d make one revolution, if each of the first antenna wires 39a to 39d is arranged more than one revolution and the antenna wire corresponds to three corner areas or two corner areas in the final revolution, the strength of the induced electric field in the corresponding corner area can be selectively changed.

[0088] In the above-described embodiment, when changing the impedance of the first antenna line or the second antenna line, only the height of the first coupling part or the second coupling part is changed. However, for example, the impedance of the first antenna line or the second antenna line may be increased by adding a capacitor to the first antenna line or the second antenna line. The location where the capacitor is added to the first antenna line or the second antenna line is not particularly limited, but it is preferable to provide the capacitor at the first coupling part or the second coupling part.

[0089] For example, as shown in Fig. 11, in the first antenna line 39a, a capacitor 57a is provided at the first connecting portion 39a2 to reduce the impedance. In the first antenna line 39b, a capacitor 57b is provided at the first connecting portion 39b2 to reduce the impedance. In the first antenna line 39c, a capacitor 57c is provided at the first connecting portion 39c2 to reduce the impedance. In the first antenna line 39d, a capacitor 57d is provided at the first connecting portion 39d2 to reduce the impedance.

[0090] 12, for example, in the second antenna line 40a, a capacitor 58a is provided at the second coupling portion 40a1 to reduce the impedance. In the second antenna line 40b, a capacitor 58b is provided at the second coupling portion 40b1 to reduce the impedance. In the second antenna line 40c, a capacitor 58c is provided at the second coupling portion 40c1 to reduce the impedance. In the second antenna line 40d, a capacitor 58d is provided at the second coupling portion 40d1 to reduce the impedance.

[0091] As described above, the first and second connecting parts are configured to be removable. Therefore, a capacitor can be added to the first and second connecting parts by replacing the first and second connecting parts not provided with a capacitor with the first and second connecting parts provided with a capacitor. This makes it possible to easily reduce the impedance of the first and second antenna lines.

[0092] Furthermore, the impedance of the first antenna line and the second antenna line can be changed by replacing the capacitors with different capacitances with the first connecting part and the second connecting part. On the other hand, a variable capacitor with a variable capacitance may be provided to the first connecting part and the second connecting part. In this case, the impedance of the first antenna line and the second antenna line can be changed by changing the capacitance of the variable capacitor. Therefore, it is possible to save the trouble of replacing the first connecting part and the second connecting part in order to change the impedance of the first antenna line and the second antenna line.

[0093] 12, in the second antenna section 40, the capacitors 58a-58d may be provided on the second coupling parts 40a1-40d1, and the heights of the second coupling parts 40a1-40d1 may be changed from the standard height. In this case, the impedance of the second antenna line 40a is roughly adjusted by adding the capacitors 58a-58d, and the impedance of the second antenna line 40a is finely adjusted by changing the heights of the second coupling parts 40a1-40d1. This allows the impedance of the second antenna line 40a to be more precisely adjusted.

[0094] 11, the first antenna unit 39 may also have the capacitors 57a-57d provided on the first connecting portions 39a2-39d2 and the heights of the first connecting portions 39a2-39d2 changed from the standard height. This allows the impedance of the first antenna line 39a to be adjusted more precisely.

[0095] In the first antenna unit 39, the four first antenna wires 39a-39d are arranged to be shifted by 90° in the circumferential direction of the rectangular plane, but the phase shift of the first antenna wires 39a-39d is not limited to 90°. Furthermore, in the second antenna unit 40, the four second antenna wires 40a-40d are also arranged to be shifted by 90° in the circumferential direction of the rectangular plane, but the phase shift of the second antenna wires 40a-40d is not limited to 90°.

[0096] In the substrate processing apparatus 10, the window member 13 is made of a dielectric material, but the window member 13 may be made of a plurality of metal pieces that are insulated from each other. [Explanation of symbols]

[0097] G rectangular board 10 Substrate processing equipment 11 Processing vessel 13 Window Materials 14 Antenna Room 15 Processing Room 23 Antenna unit 24 Placement table 39 First antenna part 39a to 39d First antenna wire 39aa, 39ab, 39ac, 39bb, 39bc, 39bd, 39cc, 39cd, 39ca, 39dd, 39da, 39db Corner components 39a1, 39a2, 39b1, 39b2, 39c1, 39c2, 39d1, 39d2 First connecting portion 39aw, 39ax, 39ay, 39az, 39bw, 39bx, 39by, 39bz, 39cw, 39cx, 39cy, 39cz, 39dw, 39dx, 39dy, 39dz First extension 40 Second antenna part 40a~40d Second antenna wire 40aa, 40ab, 40bb, 40bc, 40cc, 40cd, 40dd, 40da side components 40a1, 40b1, 40c1, 40d1 Second connecting portion 40ay, 40az, 40by, 40bz, 40cy, 40cz, 40dy, 40dz Second extension

Claims

1. An inductively coupled antenna that generates plasma by forming an induction electric field inside a processing vessel that performs plasma processing on a rectangular substrate, a first antenna section formed of a plurality of first antenna wires arranged in a spiral shape, and a second antenna section formed of a plurality of second antenna wires arranged in a spiral shape; High frequency power is supplied to the first antenna unit and the second antenna unit, the first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane, the first antenna wires are arranged such that the phases of rotation angles about the center of the rectangular plane are shifted from each other in a circumferential direction of the rectangular plane, and the second antenna wires are arranged such that the phases of rotation angles about the center of the rectangular plane are shifted from each other in the circumferential direction, each of the first antenna wires includes a corner component disposed at at least two of the four corners that are arranged in sequence in the circumferential direction, and a first coupling portion that connects the corner components and is arranged to avoid the side portion between the two corners; each of the second antenna wires has side component portions arranged on at least two of the four side portions that are aligned in sequence in the circumferential direction, and a second connecting portion that connects the side component portions and is arranged so as to avoid the corner portion between the two side portions; An inductively coupled antenna, wherein each of the first connecting portions and each of the second connecting portions are configured so that a distance therebetween from the rectangular plane can be individually adjusted.

2. a window member is disposed inside the processing vessel to separate the processing vessel into an antenna chamber and a processing chamber; the inductive coupling antenna is disposed in the antenna chamber, and the inductive coupling antenna forms the inductive electric field inside the processing chamber; 2. The inductive coupling antenna of claim 1, wherein an adjustment range of a distance of each of the first connecting portions and each of the second connecting portions from the rectangular plane is limited so that each of the first connecting portions and each of the second connecting portions does not affect the induced electric field inside the processing chamber.

3. each of the corner components of the first antenna line has a first extending portion at an end thereof extending away from the rectangular plane, each of the first connecting portions is attached to each of the first extending portions, and a distance of each of the first connecting portions from the rectangular plane is adjusted by changing an attachment position of each of the first connecting portions relative to each of the first extending portions; 2. The inductively coupled antenna according to claim 1, wherein each of the side components of the second antenna line has a second extension portion at an end portion extending away from the rectangular plane, each of the second connecting portions is attached to each of the second extension portions, and a distance of each of the second connecting portions from the rectangular plane is adjusted by changing an attachment position of each of the second connecting portions relative to each of the second extension portions.

4. The inductively coupled antenna according to claim 3 , wherein each of the first connecting portions is configured to be detachable from each of the first extending portions, and each of the second connecting portions is configured to be detachable from each of the second extending portions.

5. the first antenna portion has four of the first antenna lines, each of the first antenna lines having a starting point at each of the corners different from each other; 2. The inductively coupled antenna according to claim 1, wherein the second antenna portion has four of the second antenna lines, each of the second antenna lines having a starting point on a different side portion from the others.

6. A substrate processing apparatus that performs plasma processing on a rectangular substrate, comprising: a processing vessel for accommodating the rectangular substrate therein; a window member that divides the inside of the processing vessel into an antenna chamber and a processing chamber; a mounting table disposed inside the processing chamber and configured to mount the rectangular substrate thereon; an inductively coupled antenna disposed inside the antenna chamber so as to face the mounting table across the window member, the inductively coupled antenna includes a first antenna section including a plurality of first antenna wires arranged in a spiral shape, and a second antenna section including a plurality of second antenna wires arranged in a spiral shape; High frequency power is supplied to the first antenna unit and the second antenna unit, the first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane, the first antenna wires are arranged such that the phases of rotation angles about the center of the rectangular plane are shifted from each other in a circumferential direction of the rectangular plane, and the second antenna wires are arranged such that the phases of rotation angles about the center of the rectangular plane are shifted from each other in the circumferential direction, each of the first antenna wires includes a corner component disposed at at least two of the four corners that are arranged in sequence in the circumferential direction, and a first coupling portion that connects the corner components and is arranged to avoid the side portion between the two corners; each of the second antenna wires has side component portions arranged on at least two of the four side portions that are aligned in sequence in the circumferential direction, and a second connecting portion that connects the side component portions and is arranged so as to avoid the corner portion between the two side portions; The substrate processing apparatus, wherein each of the first connecting portions and each of the second connecting portions are configured so that a distance therebetween from the rectangular plane can be individually adjusted.

7. A substrate processing method for performing plasma processing on a rectangular substrate using a substrate processing apparatus, comprising: the substrate processing apparatus includes a processing vessel that accommodates the rectangular substrate therein, a window member that divides the interior of the processing vessel into an antenna chamber and a processing chamber, a mounting stage that is disposed within the processing chamber and that supports the rectangular substrate thereon, and an inductively coupled antenna that is disposed within the antenna chamber so as to face the mounting stage across the window member; the inductively coupled antenna includes a first antenna section including a plurality of first antenna wires arranged in a spiral shape, and a second antenna section including a plurality of second antenna wires arranged in a spiral shape; the first antenna portion and the second antenna portion form a rectangular plane, the first antenna portion forms four corners of the rectangular plane, and the second antenna portion forms four sides of the rectangular plane, the first antenna wires are arranged such that the phases of rotation angles about the center of the rectangular plane are shifted from each other in a circumferential direction of the rectangular plane, and the second antenna wires are arranged such that the phases of rotation angles about the center of the rectangular plane are shifted from each other in the circumferential direction, each of the first antenna wires includes a corner component disposed at at least two of the four corners that are arranged in sequence in the circumferential direction, and a first coupling portion that connects the corner components and is arranged to avoid the side portion between the two corners; each of the second antenna wires has side component portions arranged on at least two of the four side portions that are aligned in sequence in the circumferential direction, and a second connecting portion that connects the side component portions and is arranged so as to avoid the corner portion between the two side portions; changing a distance from the rectangular plane of at least one of the first connecting portion and the second connecting portion to change an impedance of at least one of the first antenna line and the second antenna line; A high frequency power is supplied to each of the first antenna unit and the second antenna unit to generate an induction electric field inside the processing chamber. Introducing a processing gas into the processing chamber; The introduced processing gas is excited by the induction electric field to generate plasma; A method for processing a substrate, wherein the distribution of the induced electric field is affected by a change in the impedance.

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