Heat management system and vehicle

Abstract

To provide a heat management system which can properly perform both heat radiation management and heat creation management, and to provide a vehicle.SOLUTION: A heat management system includes a power semiconductor 11 (a heat generation part). The power semiconductor 11 has heat radiation paths 30 and 40. The heat radiation path 30 is configured to transmit heat from the power semiconductor 11 to portions other than the power semiconductor 11. An amount of heat radiated from the power semiconductor 11 through the heat radiation path 40 increases in response to increase of the temperature of the power semiconductor 11.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a thermal management system and a vehicle. [Background technology]

[0002] International Publication No. 2005 / 071824 (Patent Document 1) discloses a technique for cooling a semiconductor device by controlling the temperature of a coolant circulating through a flow path provided in a housing of the semiconductor device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2005 / 071824 Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, in fields such as automobiles, thermal management systems that perform not only heat dissipation management but also heat generation management have been proposed. For example, in the system described in the above-mentioned Patent Document 1, it may be possible to use the heat emitted from a semiconductor device to heat other devices. However, Patent Document 1 only mentions thermal management related to heat dissipation from a semiconductor device (heat dissipation management), and does not mention thermal management that utilizes heat generated by the semiconductor device (heat generation management). For this reason, depending on the situation, heat generation management may not be performed appropriately.

[0005] The present disclosure has been made to solve the above-mentioned problems, and its purpose is to appropriately perform both heat dissipation management and heat generation management. [Means for solving the problem]

[0006] A thermal management system according to an embodiment of the present disclosure includes a heat generating unit having a plurality of heat dissipation paths. The plurality of heat dissipation paths include a first heat dissipation path and a second heat dissipation path. The first heat dissipation path is configured to transfer heat from the heat generating unit to a portion other than the heat generating unit. As the temperature of the heat generating unit increases, the amount of heat dissipated from the heat generating unit through the second heat dissipation path increases.

[0007] According to another aspect of the present disclosure, there is provided a vehicle including the above system. Effect of the Invention

[0008] According to the present disclosure, it becomes possible to appropriately perform both heat dissipation management and heat generation management. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 illustrates a thermal management system according to an embodiment of the present disclosure. [Diagram 2] FIG. 2 is a diagram showing the state of the thermal management system when a heat generating portion is at a high temperature. [Diagram 3] FIG. 2 is a diagram showing the state of the thermal management system when the heat generating portion is at a low temperature. [Figure 4] 11 is a diagram showing an example of a planar structure of a second heat dissipation path; FIG. [Diagram 5] 13A and 13B are diagrams illustrating modified examples of the planar structure of the second heat dissipation path. [Figure 6] 2 is a diagram showing a vehicle to which the heat dissipation structure shown in FIG. 1 is applied. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] An embodiment of the present disclosure will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are given the same reference numerals and their description will not be repeated. In each of the drawings used below, the Z axis of the mutually orthogonal X-axis, Y-axis, and Z-axis indicates the thickness direction of the substrate. Hereinafter, the directions indicated by the arrows of the X-axis, Y-axis, and Z-axis are indicated with "+" and the opposite directions are indicated with "-". With regard to the two main surfaces (front and back) of a plate-like member (or its laminate), the surface in the +Z direction may be referred to as the "first surface" and the surface in the -Z direction as the "second surface".

[0011] Fig. 1 is a diagram showing a thermal management system according to this embodiment. The -Z direction in Fig. 1 corresponds to the direction in which gravity acts (vertically downward). With reference to Fig. 1, this thermal management system includes a semiconductor power device 10 including a power semiconductor 11 (heat generating portion), and a heat dissipation path 30 (first heat dissipation path) and a heat dissipation path 40 (second heat dissipation path) of the power semiconductor 11.

[0012] The semiconductor power device 10 includes, in addition to the power semiconductor 11, a laminated substrate in which substrates 13 to 15 are laminated in the Z direction, and a cooler 16. Substrate 15, substrate 14, and substrate 13 are laminated in this order from the -Z side. Each of the substrates 13 and 15 is, for example, a metal substrate. Each of the substrates 13 and 15 may be a copper plate. The substrate 14 is an insulating substrate made of ceramics. Examples of ceramic insulating substrates include an alumina substrate, an aluminum nitride substrate, and a silicon nitride substrate. The laminated substrate is, for example, an insulating heat dissipation circuit substrate having a structure in which a ceramic substrate is sandwiched between two metal substrates. The ceramic substrate and the two metal substrates may be bonded and integrated by active metal bonding (AMB) or direct bonding (DCB).

[0013] The substrate 13 includes an electronic circuit, and a power semiconductor 11 is mounted on a first surface of the substrate 13 via a bonding material 12. Examples of the bonding material 12 include solder and a conductive adhesive. The semiconductor power device 10 is configured to convert and / or control electric power using the electronic circuit including the power semiconductor 11. Examples of the power semiconductor 11 include a power transistor such as an IGBT, a MOSFET, or a bipolar power transistor. Examples of semiconductor materials include Si, SiC, and GaN.

[0014] A cooler 16 is bonded to the second surface of the substrate 15. Examples of bonding materials for the cooler 16 include solder and grease. The cooler 16 is configured to transfer the heat received from the laminated substrate to the heat dissipation path 30. The cooler 16 is formed of, for example, a metal. The cooler 16 has a plurality of protrusions that protrude toward the heat dissipation path 30.

[0015] The heat dissipation path 30 includes a tube 31 and a heat insulating material 33. The tube 31 is, for example, a metallic cylindrical member. The heat insulating material 33 is provided on the outer surface of the -Z side of the tube 31. This suppresses heat exchange on the -Z side of the tube 31. However, this is not limited to the above, and a heat dissipation material may be provided instead of the heat insulating material 33 to promote heat dissipation on the -Z side of the tube 31. The tube 31 accommodates a heat medium 30a and a cooling fin 32 in the tube. The heat medium 30a flows in the tube 31, for example, on the +Y side. The outer surface of the +Z side of the tube 31 is in contact with each protrusion of the cooler 16. Heat from the cooler 16 is transferred to the heat medium 30a and the cooling fin 32 via the tube 31. Examples of the heat medium 30a include water, antifreeze, an organic fluorine compound, carbon dioxide, and ammonia.

[0016] The cooling fins 32 are, for example, corrugated metal plates. The cooling fins 32 are formed to move between the inner surface on the +Z side and the inner surface on the -Z side of the tube body 31. This shape promotes heat exchange between the cooling fins 32 and the heat medium 30a. The cooling fins 32 are in contact with the inner surface on the +Z side of the tube body 31 at a location facing the protrusion of the cooler 16. This promotes heat exchange between the cooling fins 32 and the cooler 16.

[0017] The heat dissipation path 30 is configured to transfer heat from the power semiconductor 11 to another component (a component other than the power semiconductor 11). Hereinafter, the other component that exchanges heat with the power semiconductor 11 through the heat dissipation path 30 is referred to as a "target component." In this embodiment, a heat medium 30a flows through a flow path formed by the tube body 31. The heat medium 30a exchanges heat with each of the power semiconductor 11 and the target component (not shown in FIG. 1). The details will be described later, but an example of the target component is an in-vehicle battery (see FIG. 6).

[0018] The thermal management system shown in FIG. 1 further includes a container 20 capable of exchanging heat with the power semiconductor 11. The container 20 includes a metal part 21 (first metal part), a resin part 22, and a metal part 23 (second metal part). The metal part 21 is in contact with the substrate 13. The metal part 21 exchanges heat with the power semiconductor 11 via the substrate 13 and the bonding material 12. The metal part 21, the resin part 22, and the metal part 23 are connected to each other and seal the internal space. The resin part 22 is located between the metal part 21 and the metal part 23. The container 20 accommodates a thermal expansion material M1, a high thermal conductivity material M2, and a low thermal conductivity material M3 in the sealed internal space. The thermal conductivity of the high thermal conductivity material M2 is higher than that of the low thermal conductivity material M3. The thermal expansion material M1 has a higher thermal expansion coefficient than each of the low thermal conductivity material M3 and the high thermal conductivity material M2.

[0019] The thermal expansion material M1 changes its volume in the operating temperature range of the power semiconductor 11. The thermal expansion material M1 may have a melting point within the operating temperature range of the power semiconductor 11. The thermal expansion material M1 is, for example, in a solid state at room temperature and liquefies as the temperature of the power semiconductor 11 rises. The volume of the thermal expansion material M1 increases as it liquefies. An example of the thermal expansion material M1 is wax. The high thermal conductivity material M2 maintains high fluidity in the operating temperature range of the power semiconductor 11. The high thermal conductivity material M2 may be in a liquid state or a semi-solid state in the operating temperature range of the power semiconductor 11. The thermal conductivity of the high thermal conductivity material M2 may be 50 W / m·K or more and 100 W / m·K or less, and may be about 80 W / m·K. Examples of the high thermal conductivity material M2 include liquid sodium and thermal grease. The low thermal conductivity material M3 maintains high fluidity in the operating temperature range of the power semiconductor 11. The low thermal conductivity material M3 may be in a gas state in the operating temperature range of the power semiconductor 11. The thermal conductivity of the low thermal conductive material M3 may be 0.01 W / m·K or more and 1.00 W / m·K or less, and may be about 0.02 W / m·K. Examples of the low thermal conductive material M3 include air, nitrogen gas, and argon gas. The thermal expansion material M1, the high thermal conductive material M2, and the low thermal conductive material M3 are in different states (solid / liquid / gas) from each other, which promotes separation and suppresses mixing.

[0020] The heat dissipation path 40 includes metal members 41, 42 and a thermal conductivity variable portion 43. The metal member 41 is, for example, a metal case, and functions as a heat dissipation portion that promotes heat dissipation. An example of the metal member 41 is a case of an in-vehicle electronic device, the details of which will be described later (see FIG. 6). The semiconductor power device 10 is connected to the metal member 41 via the container 20. The semiconductor power device 10 is in contact with the metal portion 21. The metal member 41 is in contact with the metal portion 23. The resin portion 22 is not in contact with either the semiconductor power device 10 or the metal member 41.

[0021] The metal member 42 is a metal member formed, for example, in a rod or plate shape. The metal member 42 is in contact with the substrate 15, the cooler 16, the tube body 31, and the metal part 23 of the container 20. The metal member 42 transfers heat from the power semiconductor 11 to the thermal conductivity variable part 43. The metal member 42 is connected to the metal member 41 via the thermal conductivity variable part 43. The metal member 42 and the thermal conductivity variable part 43 function as a thermal conductive part that transfers heat from the power semiconductor 11 to the metal member 41 (heat dissipation part). The thermal conductivity variable part 43 is configured to have high thermal conductivity in response to an increase in temperature of the power semiconductor 11.

[0022] The thermal conductivity variable part 43 includes a metal part 21 of the container 20. In the container 20, the metal part 21 is configured to transfer heat generated by the power semiconductor 11 to the thermal expansion material M1. The thermal expansion material M1 contracts and expands according to the temperature of the power semiconductor 11. The high thermal conductivity material M2 and the low thermal conductivity material M3 move inside the container 20 according to the contraction / expansion of the thermal expansion material M1.

[0023] FIG. 2 is a diagram showing the state of the thermal management system when the power semiconductor 11 is in a high load state. When the load of the power semiconductor 11 becomes high, the temperature of the power semiconductor 11 rises. As shown in FIG. 2, the thermal expansion material M1 expands in response to the rise in temperature of the power semiconductor 11. Then, due to the force generated by the expansion of the thermal expansion material M1, the high thermal conductive material M2 moves in the container 20 so as to be included in the thermal conductivity variable part 43, and the low thermal conductive material M3 is compressed and moves in the container 20 so as not to be included in the thermal conductivity variable part 43. The low thermal conductive material M3 is pushed into the end of the container 20. This increases the thermal conductivity of the thermal conductivity variable part 43, and the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 increases. The heat from the power semiconductor 11 is transferred to the metal member 41 via the metal member 42 and the thermal conductivity variable part 43 (high thermal conductive material M2). The heat dissipation of the power semiconductor 11 is performed through both the heat dissipation paths 30 and 40, thereby facilitating the cooling of the power semiconductor 11. As described above, the thermal conductivity of the thermal conductivity variable portion 43 increases in response to an increase in the temperature of the power semiconductor 11. Therefore, the amount of heat transferred from the power semiconductor 11 to the metal member 41 (heat dissipation portion) increases in response to an increase in the temperature of the power semiconductor 11. This promotes cooling of the power semiconductor 11 when the temperature of the power semiconductor 11 is high.

[0024] FIG. 3 is a diagram showing a state of the thermal management system when the power semiconductor 11 is in a low load state. When the load of the power semiconductor 11 is low, the temperature of the power semiconductor 11 also becomes low. As shown in FIG. 3, the thermal expansion material M1 contracts in response to a temperature drop of the power semiconductor 11. Then, due to a force generated by the contraction of the thermal expansion material M1, the low thermal conductive material M3 expands and moves in the container 20 so as to be included in the thermal conductivity variable part 43, and the high thermal conductive material M2 moves in the container 20 so as not to be included in the thermal conductivity variable part 43. As a result, the thermal conductivity of the thermal conductivity variable part 43 is reduced, and it becomes difficult to transfer heat from the power semiconductor 11 to the metal member 41. Therefore, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is reduced. Thermal insulation may be provided by the thermal conductivity variable part 43 (low thermal conductive material M3). The low thermal conductive material M3 may prohibit the heat dissipation of the power semiconductor 11 through the heat dissipation path 40. By reducing the amount of heat dissipated from the power semiconductor 11 through the heat dissipation path 40, the amount of heat transferred from the power semiconductor 11 to the heat dissipation path 30 increases. Therefore, it becomes easier to increase the temperature of the target component by utilizing the heat generated by the power semiconductor 11.

[0025] As described above, the power semiconductor 11 (heat generating portion) has a plurality of heat dissipation paths (heat dissipation paths 30 and 40). By transferring heat from the power semiconductor 11 to other parts (parts other than the power semiconductor 11) through the heat dissipation path 30, the heat generated by the power semiconductor 11 can be used to increase the temperature of the other parts. In addition, by simultaneously dissipating heat from the power semiconductor 11 through a plurality of heat dissipation paths, the total amount of heat dissipated from the power semiconductor 11 increases, making it easier to cool the power semiconductor 11. However, when the power semiconductor 11 dissipates heat through a plurality of heat dissipation paths, the amount of heat dissipated per path decreases. For this reason, when the power semiconductor 11 dissipates heat through the heat dissipation paths 30 and 40, the amount of heat transferred to other parts through the heat dissipation path 30 is smaller than when the power semiconductor 11 dissipates heat only through the heat dissipation path 30. This makes it difficult for the temperature of the other parts to rise.

[0026] Therefore, in the thermal management system according to this embodiment, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is increased according to the rise in temperature of the power semiconductor 11. That is, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is smaller when the temperature of the power semiconductor 11 is low than when the temperature of the power semiconductor 11 is high (see FIG. 2 and FIG. 3). When it becomes difficult to transmit the heat emitted by the power semiconductor 11 to the heat dissipation path 40, the amount of heat transmitted from the power semiconductor 11 to the heat dissipation path 30 increases. When the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 decreases, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 30 increases. Since the power semiconductor 11 and other parts (including the target component) are thermally connected through the heat dissipation path 30, when the temperature of the power semiconductor 11 is low, the temperature of the other parts is likely to be low as well. For this reason, there is a high possibility that the temperature rise (heat generation) of the other parts is required when the temperature of the power semiconductor 11 is low. In the above system, when the temperature of the power semiconductor 11 is low, the amount of heat transferred from the power semiconductor 11 to other parts through the heat dissipation path 30 is increased, and the temperature rise of the other parts can be promoted. On the other hand, when the temperature of the power semiconductor 11 is high, the possibility of cooling the power semiconductor 11 increases. In the above system, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 increases in accordance with the rise in temperature of the power semiconductor 11. As a result, when the temperature of the power semiconductor 11 is high, the total amount of heat dissipated by the power semiconductor 11 increases, and the cooling of the power semiconductor 11 is promoted. In this way, the above system makes it possible to appropriately perform both heat dissipation management and heat generation management.

[0027] In the thermal management system according to this embodiment, the thermal expansion material M1 displaces the high thermal conductivity material M2 and the low thermal conductivity material M3 according to the temperature of the power semiconductor 11. The thermal expansion material M1 pulls or pushes each thermal conductivity material by contracting or expanding. When the thermal conductivity variable part 43 includes the high thermal conductivity material M2, the thermal conductivity of the thermal conductivity variable part 43 becomes high (see FIG. 2), and when the thermal conductivity variable part 43 includes the low thermal conductivity material M3, the thermal conductivity of the thermal conductivity variable part 43 becomes low (see FIG. 3). In this configuration, the high thermal conductivity material M2 and the low thermal conductivity material M3 move due to a physical phenomenon, so that electronic control and power supply for moving the high thermal conductivity material M2 and the low thermal conductivity material M3 are not required.

[0028] The container 20 shown in FIG. 1 includes a metal part 21 (first metal part), a resin part 22, and a metal part 23 (second metal part). In general, metal has high thermal conductivity, and resin has high thermal insulation. The container 20 has the metal part 21, which makes it easier to transfer heat generated by the power semiconductor 11 to the thermal expansion material M1. This makes it easier for the thermal expansion material M1 to deform (contract and expand) according to the temperature of the power semiconductor 11. In addition, the container 20 has the metal part 23, which makes it possible to suppress the container 20 (a cylinder that contains the thermal expansion material and each thermal conductive material) from interfering with the thermal conduction of the power semiconductor 11. Furthermore, the container 20 has the resin part 22, which suppresses heat exchange between the thermal expansion material M1 and the outside air. If the heat exchange between the thermal expansion material M1 and the outside air becomes more dominant than the heat exchange between the thermal expansion material M1 and the power semiconductor 11, the thermal expansion material M1 may not be in a state that corresponds to the temperature of the power semiconductor 11. The resin portion 22 suppresses heat exchange between the thermal expansion material M1 and the outside air, so that the thermal expansion material M1 is more likely to assume a state according to the temperature of the power semiconductor 11.

[0029] Fig. 4 is a diagram showing an example of a planar structure of the heat dissipation path 40 (second heat dissipation path). As shown in Fig. 4, the heat dissipation path 40 may have one metal member 42 formed in a rod shape. The semiconductor power device 10, the metal member 42, the thermal conductivity variable part 43, and the metal member 41 may be connected in this order. However, the shape and number of each of the metal member 42 and the thermal conductivity variable part 43 can be changed as appropriate.

[0030] FIG. 5 is a diagram showing a modified example of the planar structure of the second heat dissipation path. As shown in FIG. 5, the second heat dissipation path may have four metal members 42A to 42D formed in a plate shape. In this modified example, one end of each of the metal members 42A to 42D is connected to the semiconductor power device 10. The other ends of the metal members 42A, 42B, 42C, and 42D are connected to the metal member 41 via the thermal conductivity variable parts 43A, 43B, 43C, and 43D, respectively. Each of the thermal conductivity variable parts 43A to 43D has the same configuration as the thermal conductivity variable part 43 shown in FIG. 1, for example. Note that the configuration shown in FIG. 5 may be configured with the metal members 42C and 42D and the thermal conductivity variable parts 43C and 43D removed. Alternatively, the configuration shown in FIG. 5 may be configured with the metal members 42B and 42D and the thermal conductivity variable parts 43B and 43D removed.

[0031] Fig. 6 is a diagram showing a thermal management system 100a to which the heat dissipation structure shown in Fig. 1 is applied. Referring to Fig. 6, the thermal management system 100a is mounted on, for example, a vehicle 100. The vehicle 100 is an electric vehicle (xEV) configured to be capable of running on electric power discharged from a battery 200 (electric storage device) described later. The vehicle 100 may be, for example, a BEV (electric vehicle) or a PHEV (plug-in hybrid vehicle).

[0032] The thermal management system 100a includes a first circuit 110, a second circuit 120, a third circuit 130, a condenser 140, a refrigeration cycle 150, a chiller 160, a five-way valve 310, and a reservoir tank (R / T) 320. The five-way valve 310 and the reservoir tank 320 are shared by the second circuit 120 and the third circuit 130. The condenser 140, the refrigeration cycle 150, and the chiller 160 are disposed between the first circuit 110 and the second circuit 120, and function as a heat transfer mechanism.

[0033] The first circuit 110 includes a pump 111, an electric heater 112, a three-way valve 113, a heater core 114, a reservoir tank (R / T) 115, and a radiator 118. The pump 111 circulates the heat medium through the first circuit 110.

[0034] The five-way valve 310 has five ports P1 to P5. The five-way valve 310 is connected to P1 and P2 to form a second circuit 120 including flow paths 120a and 120b. The flow path 120a includes a pump 121 and a chiller 160. The flow path 120b includes a battery 200 and an electric heater 220. The pump 121 circulates the heat medium in the second circuit 120. The five-way valve 310 has ports P3 and P4 connected to a reservoir tank 320 via flow paths 130b and 130a, respectively. The five-way valve 310 is connected to a third circuit 130 including flow paths 130a and 130b to form a third circuit 130. The flow path 130a includes a smart power unit (SPU) 131, power control units (PCUs) 132 and 134, a pump 133, and oil coolers (O / C) 135 and 136. The pump 133 circulates the heat medium through the third circuit 130. Each of the oil coolers 135, 136 cools oil supplied to a transaxle (T / A) of the vehicle 100 by an electric oil pump (EOP). The port P5 of the five-way valve 310 is connected to the reservoir tank 320 via a flow path 170a. The flow path 170a includes a radiator 170.

[0035] The SPU 131 functions as an on-board charger / discharger (charger and discharger) for the battery 200. However, it is not essential that the vehicle 100 has an external power supply function (for example, a V2H function). The SPU 131 includes, for example, a power conversion circuit. The PCUs 132 and 134 are circuits that use power supplied from the battery 200 to drive a Fr-MG (front motor) and a Rr-MG (rear motor), not shown, respectively. Each MG corresponds to a motor that drives the vehicle 100. The torque output by each MG rotates the drive wheels of the vehicle 100 via a transaxle (T / A). The T / A functions as a power transmission mechanism. The battery 200 functions as a power storage device for driving. Each PCU may include a bidirectional inverter.

[0036] The refrigeration cycle 150 includes a compressor 151, an electric expansion valve 152, an evaporator 153, an evaporative pressure regulator (EPR) 154, and an electric expansion valve 155. The condenser 140 is connected to both the first circuit 110 and the refrigeration cycle 150, and functions as a heat exchanger. The chiller 160 is connected to both the refrigeration cycle 150 and the flow path 120a, and functions as a heat exchanger. The air conditioner mounted on the vehicle 100 performs air conditioning (heating and cooling) inside the vehicle 100 using the first circuit 110 and the refrigeration cycle 150. For example, the heater core 114 heats the air in the vehicle cabin, and the evaporator 153 cools the air in the vehicle cabin.

[0037] The refrigeration cycle 150, the chiller 160, the SPU 132, each PCU, each heater, each pump, and each valve in the thermal management system 100a are controlled by an on-board ECU (Electronic Control Unit) not shown. Each of the PCUs 132, 134 has the semiconductor power device 10 shown in FIG. 1. The case of each PCU corresponds to the metal member 41. In the thermal management system 100a, the battery 200 corresponds to the target component, and the flow path 130a includes the heat dissipation path 30 shown in FIG. 1. By applying the heat dissipation structure shown in FIG. 1 to the vehicle 100, the output restriction (power restriction) of the vehicle 100 caused by the temperature rise of each PCU during high load is suppressed. Furthermore, when the temperature of each PCU is low, heat generation by each PCU (heat transfer to the flow path 130a) can be promoted with the ports P3 and P4 of the five-way valve 310 connected. This makes it possible to increase the temperature of the battery 200 by utilizing the heat generated by the power semiconductor 11 in each PCU. In this way, the vehicle 100 can prevent the semiconductor power device 10 from overheating in a high-temperature environment, while raising the temperature of the battery 200 in a low-temperature environment by utilizing the heat generated by the semiconductor power device 10.

[0038] The heat dissipation structure shown in FIG. 1 can be modified as appropriate. The actuator that moves the thermally conductive material (high thermally conductive material M2 / low thermally conductive material M3) is not limited to the actuator using the thermal expansion material M1 shown in FIG. 1. For example, the thermally conductive material may be moved according to the temperature rise of the heat generating part by a bimetal or a pump that can rotate forward and backward. The heat generating part is not limited to a power semiconductor, and may be a heat generating part other than a power semiconductor. The heat dissipation structure shown in FIG. 1 may be applied to a moving body other than an automobile. Examples of moving bodies other than an automobile include vehicles other than an automobile (ships, airplanes, etc.), mobile machines (agricultural machines, construction machines, etc.), and unmanned moving bodies (automated guided vehicles, robots, etc.). The heat dissipation structure shown in FIG. 1 may also be applied to a stationary system.

[0039] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The scope of the present disclosure is defined by the claims, not by the description of the embodiments described above, and is intended to include all modifications within the meaning and scope of the claims. [Explanation of symbols]

[0040] 10 semiconductor power device, 11 power semiconductor, 12 bonding material, 13-15 substrate, 16 cooler, 20 container, 21 metal part, 22 resin part, 23 metal part, 30, 40 heat dissipation path, 30a heat medium, 31 tube body, 41, 42 metal member, 43 thermal conductivity variable part, 100 vehicle, 100a thermal management system, 200 battery, M1 thermal expansion material, M2 high thermal conductivity material, M3 low thermal conductivity material.

Claims

1. A thermal management system including a heat generating unit having a plurality of heat dissipation paths, the plurality of heat dissipation paths include a first heat dissipation path and a second heat dissipation path, The first heat dissipation path is configured to transfer heat from the heat generating portion to a portion other than the heat generating portion, a heat management system in which an amount of heat dissipated from the heat generating portion through the second heat dissipation path increases in response to an increase in temperature of the heat generating portion.

2. the first heat dissipation path includes a flow path through which a heat medium flows to exchange heat with each of the heat generating portion and the other portion, the second heat dissipation path includes a heat dissipation portion and a heat conduction portion that transfers heat from the heat generating portion to the heat dissipation portion; The thermal management system according to claim 1 , wherein at least a portion of the thermally conductive portion is configured to have increased thermal conductivity in response to an increase in temperature of the heat generating portion.

3. The thermal management system further includes a container capable of exchanging heat with the heat generating portion, the container accommodates a low thermal conductive material, a high thermal conductive material having a thermal conductivity higher than that of the low thermal conductive material, and a thermal expansion material having a thermal expansion coefficient higher than that of each of the low thermal conductive material and the high thermal conductive material; The thermal expansion material contracts and expands according to the temperature of the heat generating portion, the low thermal conductivity material moves within the container so as to be included in the thermal conductive portion by a force generated by contraction or expansion of the thermal expansion material; The thermal management system according to claim 2 , wherein the highly thermally conductive material moves within the container so as to be included in the thermally conductive portion due to a force generated by expansion or contraction of the thermal expansion material.

4. the container includes a first metal part, a resin part, and a second metal part; The first metal portion is configured to transfer heat generated by the heat generating portion to the thermal expansion material, the second metal portion is included in the thermal conduction portion, The thermal management system according to claim 3 , wherein the resin portion is located between the first metal portion and the second metal portion.

5. A vehicle equipped with the thermal management system according to any one of claims 1 to 4, The vehicle is A power storage device; a circuit that has a semiconductor power device and drives a motor that drives the vehicle using the power output from the power storage device; Equipped with the other portion includes the power storage device, The semiconductor power device includes the heat generating portion.

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