Photoelectric conversion device, photoelectric conversion system, mobile object and equipment

Abstract

To provide a technique advantageous for improving temperature detection accuracy.SOLUTION: A photoelectric conversion device comprises a first substrate, a second substrate, a third substrate which includes an avalanche photodiode, and a temperature detection element having an output characteristic dependent on temperature. A signal processing circuit for processing a signal output from the avalanche photodiode is disposed on at least a portion of the second substrate and the third substrate. The first substrate, the second substrate, and the third substrate are stacked such that the second substrate is disposed between the first substrate and the third substrate. The temperature detection element is disposed on the first substrate or the second substrate.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a photoelectric conversion device, a photoelectric conversion system, a mobile object, and an instrument. [Background technology]

[0002] Avalanche photodiodes (APDs) capable of detecting light at a single photon level are known. The characteristics of APDs change depending on temperature. Patent Document 1 discloses a control circuit that includes a temperature sensor and controls the bias voltage applied to the APD in response to the measured temperature. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2002-084235 A Summary of the Invention [Problem to be solved by the invention]

[0004] In order to control the characteristics of the APD with high precision, it is necessary to detect the temperature with high precision.

[0005] An object of the present invention is to provide a technique that is advantageous for improving the accuracy of temperature detection. [Means for solving the problem]

[0006] In view of the above problems, a photoelectric conversion device according to an embodiment of the present invention is a photoelectric conversion device comprising a first substrate including an avalanche photodiode, a second substrate, a third substrate, and a temperature detection element having output characteristics dependent on temperature, wherein a signal processing circuit for processing a signal output from the avalanche photodiode is arranged on at least a portion of the second substrate and the third substrate, the first substrate, the second substrate, and the third substrate are stacked such that the second substrate is arranged between the first substrate and the third substrate, and the temperature detection element is arranged on the first substrate or the second substrate. Effect of the Invention

[0007] According to the present invention, it is possible to provide a technique that is advantageous for improving the accuracy of temperature detection. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of the arrangement of a photoelectric conversion device according to a first embodiment. [Diagram 2] 2 is a diagram showing an example of the configuration of a pixel array of the photoelectric conversion device of FIG. 1; [Diagram 3] FIG. 2 is a block diagram showing a configuration example of the photoelectric conversion device in FIG. 1. [Figure 4] FIG. 2 is a circuit diagram showing an example of the configuration of a pixel of the photoelectric conversion device in FIG. [Diagram 5] 5 is a diagram for explaining an example of the operation of the pixel in FIG. 4. [Figure 6] FIG. 2 is a diagram showing an example of the arrangement of temperature detection elements in the photoelectric conversion device of FIG. 1. [Figure 7] FIG. 7 is a cross-sectional view showing a configuration example of the photoelectric conversion device in FIG. 6. [Figure 8] FIG. 7 is a diagram showing a modification of the photoelectric conversion device in FIG. [Figure 9] FIG. 7 is a diagram showing a modification of the photoelectric conversion device in FIG. [Figure 10] 10 is a cross-sectional view showing a configuration example of the photoelectric conversion device in FIG. 9. [Figure 11] 11 is a plan view of the photoelectric conversion device of FIG. 10 taken along line AA'. [Figure 12]FIG. 10 is a diagram showing a modification of the photoelectric conversion device in FIG. [Figure 13] 13 is a cross-sectional view showing a configuration example of the photoelectric conversion device of FIG. 12. [Figure 14] FIG. 7 is a diagram showing a modification of the photoelectric conversion device in FIG. [Figure 15] 15 is a cross-sectional view showing a configuration example of the photoelectric conversion device in FIG. 14. [Figure 16] FIG. 11 is a functional block diagram of a photoelectric conversion system according to a second embodiment. [Figure 17] FIG. 11 is a functional block diagram of a photoelectric conversion system according to a third embodiment. [Figure 18] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a fourth embodiment. [Figure 19] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a fifth embodiment. [Figure 20] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a sixth embodiment. [Figure 21] FIG. 13 is a functional block diagram of a photoelectric conversion system according to a seventh embodiment. [Figure 22] FIG. 13 is a functional block diagram of a photoelectric conversion system according to an eighth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0010] First, a configuration common to the first embodiment will be described with reference to Figs. 1 to 5. Fig. 1 is a diagram showing a configuration example of a photoelectric conversion device 100. The photoelectric conversion device 100 is configured by stacking two substrates, a sensor substrate 411 and a circuit substrate 421, and electrically connecting them. In other words, the photoelectric conversion device 100 is a stacked device. In the configuration shown in Fig. 1, the circuit substrate 421 is a substrate on which a circuit for processing a signal output from the sensor substrate is formed. However, this is not limited thereto, and as described below, the circuit substrate 421 may be a substrate in which two or more substrates are stacked, and a circuit for processing a signal output from the sensor substrate is formed separately so as to span each of the stacked substrates.

[0011] A plurality of pixels 250 are arranged on the sensor substrate 411. Circuits such as a signal processing circuit 253 that processes signals output from the pixels 250 are arranged on the circuit substrate 421. The photoelectric conversion device 100 may be a so-called back-illuminated photoelectric conversion device in which light is incident from the side opposite to the insulating layer side on which the wiring pattern of the sensor substrate 411 is arranged.

[0012] In the following, the sensor substrate 411 and the circuit substrate 421 are described as being diced chips, but are not limited to chips. For example, the sensor substrate 411 and the circuit substrate 421 may be configured by stacking wafers. The sensor substrate 411 and the circuit substrate 421 may be stacked in the wafer state and then diced, or may be chipped (divided) from the wafer state and then stacked and bonded to each chip.

[0013] A pixel region 412 including a plurality of pixels 250 is disposed on the sensor substrate 411. A circuit region 422 that processes signals detected in the pixel region 412 is disposed on the circuit substrate 421.

[0014] FIG. 2 is a diagram showing an example of the arrangement of the sensor substrate 411. Pixels 250 each having a photoelectric conversion element 220 such as an avalanche photodiode (APD) are arranged in a two-dimensional array in a plan view to form a pixel region 412. The plan view means, for example, viewing the plane in a direction parallel to the stacking direction of the sensor substrate 411 and the circuit substrate 421. The pixels 250 are typically pixels for generating an image. However, when the photoelectric conversion device 100 is used as a Time of Flight (ToF) type sensor or the like, the pixels 250 do not necessarily need to be used for generating an image. That is, the pixels 250 may be configured to measure the time when light arrives and the amount of light.

[0015] Fig. 3 is a diagram showing a configuration example of the circuit board 421. The circuit board 421 includes a signal processing circuit 253 that processes charges photoelectrically converted by the photoelectric conversion element 220 shown in Fig. 2, a readout circuit 262, a control pulse generating circuit 265, a horizontal scanning circuit 261, a signal line 263, a vertical scanning circuit 260, and the like. The signal processing circuit 253 shown in Fig. 3 may be arranged so as to correspond to each of the pixels 250 shown in Fig. 2. In this case, the pixels 250 (photoelectric conversion element 220) and the signal processing circuit 253 may be electrically connected via a connection wiring provided for each pixel 250.

[0016] The vertical scanning circuit 260 receives a control pulse supplied from a control pulse generating circuit 265, and supplies the control pulse to each pixel 250. The vertical scanning circuit 260 can include logic circuits such as a shift register and an address decoder.

[0017] The signal output from the pixel 250 is processed by a signal processing circuit 253. A counter, a memory, and the like can be provided in the signal processing circuit 253. The count value counted by the counter can be held as a digital value in the memory.

[0018] The horizontal scanning circuit 261 inputs a control pulse for sequentially selecting each column to the signal processing circuit 253 in order to read out a signal from the memory of the signal processing circuit 253 corresponding to each pixel 250 in which a digital signal is held. A signal is output to the signal line 263 from the signal processing circuit 253 corresponding to the pixel 250 selected by the vertical scanning circuit 260 for the selected column. The signal output to the signal line 263 is output to a recording unit or a signal processing unit outside the photoelectric conversion device 100 via the output circuit 264.

[0019] The arrangement of the pixels 250 in the pixel region 412 shown in Fig. 2 is not limited to a two-dimensional array. The pixels 250 may be arranged one-dimensionally. The function of the signal processing circuit 253 does not necessarily need to be provided for each pixel 250 (photoelectric conversion element 220). For example, one signal processing circuit 253 may be shared by a plurality of pixels 250 (photoelectric conversion elements 220) and signal processing may be performed sequentially.

[0020] 2 and 3, in the orthogonal projection onto the pixel region 412, a plurality of signal processing circuits 253 may be arranged in a region overlapping the pixel region 412. In addition, the vertical scanning circuit 260, the horizontal scanning circuit 261, the readout circuit 262, the output circuit 264, the control pulse generating circuit 265, and the like may be arranged so as to overlap between the end of the sensor substrate 411 and the end of the pixel region 412. In other words, the sensor substrate 411 has the pixel region 412 and a non-pixel region arranged around the pixel region 412. In this case, the vertical scanning circuit 260, the horizontal scanning circuit 261, the readout circuit 262, the output circuit 264, and the control pulse generating circuit 265 may be arranged in a region overlapping the non-pixel region.

[0021] 4 is an example of a block diagram including an equivalent circuit focusing on one pixel 250 (photoelectric conversion element 220). In FIG. 4, the photoelectric conversion element 220 including the APD 201 is provided on a sensor substrate 411, and the other components are provided on a circuit substrate 421.

[0022] The APD 201 generates charge pairs according to the incident light by photoelectric conversion. An electric potential VL is supplied to the anode of the APD 201. An electric potential VH higher than the electric potential VL supplied to the anode is supplied to the cathode of the APD 201. A reverse bias voltage that causes the APD 201 to perform avalanche multiplication is supplied to the anode and cathode. By supplying such a reverse bias voltage, the electric charges generated by the incident light undergo avalanche multiplication, generating an avalanche current.

[0023] When a reverse bias voltage is supplied to the APD201, there are two modes: a Geiger mode in which the potential difference (voltage) between the anode and cathode is greater than the breakdown voltage, and a linear mode in which the potential difference between the anode and cathode is close to or less than the breakdown voltage. An APD operated in the Geiger mode is called a Single Photon Avalanche Diode (SPAD). For example, the potential VL is −30 V, and the potential VH is 1 V. The APD201 may be operated in either the linear mode or the Geiger mode.

[0024] The quench element 202 is connected between a power supply that supplies a potential VH and the APD 201. The quench element 202 functions as a load circuit (quench circuit) during signal multiplication by avalanche multiplication, and has a function of suppressing the voltage supplied to the APD 201 and suppressing avalanche multiplication (quench operation). The quench element 202 also has a function of returning the voltage supplied to the APD 201 to a voltage (VH-VL) by flowing a current equivalent to the voltage drop caused by the quench operation (recharge operation). The quench element 202 can be configured, for example, by a MOS transistor.

[0025] The signal processing circuit 253 can include a waveform shaping circuit 210, a counter circuit 211, and a selection circuit 212. In this specification, the signal processing circuit 253 may include any one of the waveform shaping circuit 210, the counter circuit 211, and the selection circuit 212.

[0026] The waveform shaping circuit 210 shapes the potential change of the cathode of the APD 201 obtained when a photon is detected, and outputs a pulse signal. For example, an inverter circuit is used as the waveform shaping circuit 210. In the configuration shown in Fig. 4, an example is shown in which one inverter is used as the waveform shaping circuit 210. However, the present invention is not limited to this, and a circuit in which a plurality of inverters are connected in series may be used as the waveform shaping circuit 210, or another circuit having a waveform shaping effect may be used.

[0027] The counter circuit 211 counts the pulse signal output from the waveform shaping circuit 210 and holds the count value. When a control pulse pRES is supplied from the vertical scanning circuit 260 via a driving line 213, the signal held in the counter circuit 211 is reset.

[0028] A control pulse pSEL is supplied to the selection circuit 212 from the vertical scanning circuit 260 shown in Fig. 3 via the drive line 214 shown in Fig. 4, and switches between electrical connection and non-connection between the counter circuit 211 and the signal line 263. The selection circuit 212 includes, for example, a buffer circuit for outputting a signal.

[0029] A switching element such as a transistor may be disposed between the quench element 202 and the APD 201, or between the photoelectric conversion element 220 and the signal processing circuit 253, so that the electrical connection can be switched. Similarly, the supply of the potential VH or the potential VL to the photoelectric conversion element 220 may be electrically switchable using a switching element such as a transistor.

[0030] In the present embodiment, the counter circuit 211 is disposed in the signal processing circuit 253. However, the present invention is not limited to this, and the photoelectric conversion device 100 may acquire the pulse detection timing by using a time-to-digital conversion circuit (TDC) and a memory instead of the counter circuit 211. In this case, the generation timing of the pulse signal output from the waveform shaping circuit 210 is converted into a digital signal by the TDC. A control pulse pREF (reference signal) is supplied to the TDC from the vertical scanning circuit 260 via a drive line in order to measure the timing of the pulse signal. The TDC acquires, as a digital signal, a signal obtained by converting the input timing of the signal output from each pixel 250 via the waveform shaping circuit 210 into a relative time based on the control pulse pREF.

[0031] 4 shows an example in which the quench element 202, the waveform shaping circuit 210, the counter circuit 211, and the selection circuit 212 are arranged on one circuit board 421, but the present invention is not limited to this. For example, the quench element 202 and the waveform shaping circuit 210 may be arranged on one board, and the counter circuit 211 and the selection circuit 212 may be arranged on another board, and these boards may be stacked.

[0032] 5(a) and 5(b) are diagrams that show the relationship between the operation of the APD 201 and the output signal. Fig. 5(a) is a diagram that shows the APD 201, the quench element 202, and the waveform shaping circuit 210 shown in Fig. 4. Here, the input side of the waveform shaping circuit 210 is nodeA, and the output side is nodeB. Fig. 5(b) shows the waveform changes of nodeA and nodeB.

[0033] From time t0 to time t1, a potential difference (voltage) of potential VH-potential VL is applied to the APD 201. When a photon is incident on the APD 201 at time t1, avalanche multiplication occurs in the APD 201, an avalanche multiplication current flows through the quench element 202, and the potential of nodeA drops. When the voltage drop amount becomes larger and the potential difference applied to the APD 201 becomes smaller, the avalanche multiplication of the APD 201 stops as shown at time t2, and the potential level of nodeA does not drop by more than a certain value. After that, from time t2 to time t3, a current that compensates for the voltage drop from the potential VL flows through nodeA, and at time t3, nodeA is stabilized to the original potential level. At this time, the part of the output waveform at nodeA that exceeds a certain threshold is shaped by the waveform shaping circuit 210 and output as a signal to nodeB.

[0034] The arrangement of the signal line 263, the readout circuit 262, and the output circuit 264 is not limited to the configuration shown in Fig. 3. For example, the signal line 263 may be arranged to extend in the row direction (horizontal direction in Fig. 3), and the readout circuit 262 may be arranged at the end of the signal line 263.

[0035] Next, the arrangement of temperature detection elements for detecting the temperature of pixels 250 in a photoelectric conversion device 100 having a stacked structure will be described in detail. Figures 6(a) to 6(d) are diagrams showing examples of the arrangement of temperature detection elements 141 in a photoelectric conversion device 100. Figure 6(a) shows a photoelectric conversion device 100 in which three substrates 110, 120, and 130 are stacked. Figures 6(b), 6(c), and 6(d) show examples of the arrangement of main circuits on the substrates 110, 120, and 130.

[0036] The photoelectric conversion device 100 includes a substrate 110 including an APD 201, a substrate 120 and a substrate 130 including signal processing circuits 121 and 131, respectively, for processing a signal output from the APD 201, and a temperature detection element 141 having an output characteristic that depends on temperature. The substrates 110, 120, and 130 are stacked such that the substrate 120 is disposed between the substrates 110 and 130. The substrate 110 may include a configuration similar to that of the sensor substrate 411. The substrates 120 and 130 may be configured such that a part of the configuration included in the circuit substrate 421 is disposed on the substrate 120, and the other part is disposed on the substrate 130. The photoelectric conversion device 100 includes the above-mentioned vertical scanning circuit 260, horizontal scanning circuit 261, readout circuit 262, and control pulse generating circuit 265 for operating the APD 201. The vertical scanning circuit 260, the horizontal scanning circuit 261, the readout circuit 262, and the control pulse generating circuit 265 are disposed on the substrate 130, for example.

[0037] The characteristics of the APD 201, such as the breakdown voltage that causes avalanche multiplication, change depending on the temperature. Therefore, control such as adjusting the bias voltage is performed in response to the temperature change. In order to control the characteristics of the APD 201 with high precision, it is necessary to detect the temperature with high precision. Therefore, it is necessary to make it easy for the temperature detection element 141 to transmit the temperature around the APD 201, while making it difficult for heat generated by the vertical scanning circuit 260, the horizontal scanning circuit 261, the readout circuit 262, the control pulse generating circuit 265, etc. to be transmitted. Therefore, the temperature detection element 141 is disposed on the substrate 110 on which the APD 201 is disposed, or on the substrate 120 close to the substrate 110 on which the APD 201 is disposed.

[0038] 6(a) to 6(d) show an example in which the temperature detection element 141 is disposed on the substrate 120. By disposing the temperature detection element 141 on the substrate 120 instead of the substrate 110, a manufacturing process optimized for the characteristics of the APD 201 can be adopted when forming the APD 201 on the substrate 110. As a result, the characteristics of the APD 201 can be improved. For example, as shown in FIG. 6(a), when a diode is used as the temperature detection element 141, a diode larger than the APD 201 may be used in order to measure the temperature accurately. Furthermore, the APD 201 and the temperature detection element 141 have different impurity concentration profiles. Therefore, by forming the APD 201 and the temperature detection element 141 on the substrates 110 and 120 that are different from each other, the characteristics of the APD 201 can be easily improved.

[0039] As shown in Figs. 6(a), 6(c), and 6(d), the signal processing circuit 121 and the signal processing circuit 131 are formed on different substrates 120 and 130. In this case, the power supply voltages supplied to the signal processing circuit 121 arranged on the substrate 120 and the signal processing circuit 131 arranged on the substrate 130 may be different from each other. For example, the signal processing circuit 121 arranged on the substrate 120 may include a transistor supplied with a higher power supply voltage than the signal processing circuit 131 arranged on the substrate 130. For example, the signal processing circuit 121 may include a 2.5V transistor, and the signal processing circuit 131 may include a 1.1V transistor. The transistors arranged on the signal processing circuit 121 may be, for example, a quenching element or a waveform shaping circuit. The transistors arranged on the signal processing circuit 131 may be, for example, a counter circuit. By changing the power supply voltage between the signal processing circuit 121 and the signal processing circuit 131, it is possible to obtain a configuration suitable for each of the circuits arranged on the substrates 120 and 130.

[0040] For example, the quench element 202 and the waveform shaping circuit 210 shown in FIG. 4 may be arranged on the substrate 120 as the signal processing circuit 121. Also, for example, the counter circuit 211 and the selection circuit 212 shown in FIG. 4 may be arranged on the substrate 130 as the signal processing circuit 131. Furthermore, the signal processing circuit 131 may include a memory, a buffer, and the like. Also, for example, not only the signal processing circuit 131 arranged on the substrate 130 but also the vertical scanning circuit 260, the horizontal scanning circuit 261, the readout circuit 262, and the control pulse generating circuit 265 may be composed of 1.1V transistors. For example, compared with the transistors arranged on each circuit of the substrate 120, the transistors arranged on each circuit of the substrate 130 may be transistors with advanced miniaturization. In this way, by dividing the arrangement of transistors between the substrate 120 and the substrate 130 according to the power supply voltage, it becomes possible to adopt appropriate manufacturing processes for the substrate 120 and the substrate 130, respectively. However, the present invention is not limited to this, and a transistor having the same withstand voltage as the transistor arranged on the substrate 130 (for example, a 1.1V type transistor) may be arranged on the substrate 120.

[0041] In the configuration shown in Figs. 6(a) and 6(c), a temperature value generating circuit 142 that generates a signal indicating temperature information from the output of the temperature detecting element 141 is disposed on the substrate 120. The temperature value generating circuit 142 generates a signal indicating temperature information by, for example, A / D converting the output of the temperature detecting element 141. The temperature value generating circuit 142 needs to generate a signal indicating temperature information with high accuracy from the signal output from the temperature detecting element 141. As described above, a large transistor having a higher withstand voltage than that of the substrate 130 may be disposed on the substrate 120. Therefore, disposing the temperature value generating circuit 142 on the substrate 120 reduces the influence of manufacturing variations and the like, and the design of the temperature value generating circuit 142 may be easier. Also, as shown in Figs. 6(c) and 6(d), the substrate 120 may have more space than the substrate 130. Therefore, the temperature value generating circuit 142 may be disposed on the substrate 120.

[0042] FIG. 7 is a cross-sectional view showing a more detailed configuration example of the photoelectric conversion device 100 shown in FIGS. 6(a) to 6(d). The substrate 110 includes a semiconductor layer 111 and an insulating layer 112 arranged between the semiconductor layer 111 and the substrate 120. A wiring pattern 113 or the like may be arranged in the insulating layer 112. In the configuration shown in FIG. 7, only one layer of the wiring pattern 113 is shown, but the wiring pattern may be arranged across multiple layers. The substrate 120 includes a semiconductor layer 123, an insulating layer 122 arranged between the semiconductor layer 123 and the substrate 110, and an insulating layer 124 arranged between the semiconductor layer 123 and the substrate 130. A wiring pattern 128 or the like may be arranged in the insulating layer 122. In the configuration shown in FIG. 7, only one layer of the wiring pattern 128 is shown, but the wiring pattern may be arranged across multiple layers. 7, no wiring pattern is arranged on insulating layer 124, but one or more layers of wiring patterns may be arranged. Substrate 130 includes semiconductor layer 133 and insulating layer 132 arranged between semiconductor layer 133 and substrate 120. Wiring pattern 135 and the like may be arranged in insulating layer 132. In the configuration shown in FIG. 7, only one layer of wiring pattern 135 is shown, but wiring patterns may be arranged across multiple layers.

[0043] The substrate 110 and the substrate 120 are joined via a plurality of joints 151. In each of the plurality of joints 151, a metal pattern 152 arranged on the surface of the insulating layer 112 facing the substrate 120 is in contact with a metal pattern 153 arranged on the surface of the insulating layer 122 facing the substrate 110. The surface of the insulating layer 112 facing the substrate 120 is joined to the surface of the insulating layer 122 facing the substrate 110 to form a joint surface 161. The substrate 120 and the substrate 130 are joined via a plurality of joints 154. In each of the plurality of joints 154, a metal pattern 155 arranged on the surface of the insulating layer 124 facing the substrate 130 is in contact with a metal pattern 156 arranged on the surface of the insulating layer 132 facing the substrate 120. The surface of the insulating layer 124 facing the substrate 130 and the surface of the insulating layer 132 facing the substrate 120 are bonded together to form a bonding surface 162 .

[0044] The APD 201 is formed in the semiconductor layer 111 of the substrate 110. The APD 201 includes a semiconductor region 114 and a semiconductor region 115 having mutually different polarities. The APD 201 is connected to a power supply, signal processing circuits 121, 131, and the like via a metal plug 171, a wiring pattern 113, and the like. For example, the APD 201 is connected to a semiconductor region 127 of a semiconductor layer 123 of the substrate 120 via a metal plug 171 arranged in an insulating layer 112 of the substrate 110, the wiring pattern 113, a joint 151, a metal plug 173 arranged in an insulating layer 122 of the substrate 120, and the like. The semiconductor region 127 may constitute a part of a circuit such as a transistor of the signal processing circuit 121.

[0045] The temperature detection element 141 is formed in the semiconductor layer 123 of the substrate 120. The temperature detection element 141 may be, for example, a diode including a semiconductor region 125 and a semiconductor region 126 having mutually different polarities. The temperature detection element 141 is connected to the temperature value generating circuit 142 via a metal plug 174, a wiring pattern 128, or the like. In this embodiment, a diode is used as the temperature detection element 141, but this is not limited thereto. For example, a configuration may be used in which the potential between two terminals of a resistance element having a temperature characteristic, such as a resistance element using polysilicon, TaSiN, or the like, is measured.

[0046] Next, the position where the temperature detection element 141 is disposed will be described. As described above, in order to detect the temperature around the APD 201, the temperature detection element 141 needs to be made difficult to transmit heat generated by the circuitry disposed on the substrate 130. In general, a metal plug disposed on an insulating layer transmits heat more easily than an insulating layer (insulator). Thus, the joint surface 162 between the substrates 120 and 130 includes a region 181 in which one or more joints 154a of the joints 154 that are in contact with the metal plugs 175 and 177 are disposed, and a region 182 in which one or more joints 154b of the joints 154 that are not in contact with the metal plugs are disposed. In this case, the temperature detection element 141 is disposed at a position overlapping the region 182 in an orthogonal projection onto the joint surface 162. In other words, in the orthogonal projection onto the joint surface 162 between the substrates 120 and 130, the metal plug is not in contact with the joint 154b arranged at a position overlapping the temperature detection element 141 among the multiple joints 154. This makes it difficult for heat to be transferred from the substrate 130 to the temperature detection element 141 arranged on the substrate 120. As a result, the temperature detection accuracy can be improved. Here, the outer edge of the temperature detection element 141 in the orthogonal projection onto the joint surface 162 can be defined, for example, by the inner edge of the insulating layer 129 for element isolation surrounding the temperature detection element 141. In addition, the boundary between the region 181 and the region 182 may be, for example, as shown in FIG. 7, a virtual line that bisects the joint 154a where the metal plugs 175 and 177 are in contact and the joint 154b where the metal plug is not in contact in the orthogonal projection onto the joint surface 162.

[0047] In the configuration shown in FIG. 7, the metal plug 177 is shown as a TSV structure penetrating the semiconductor layer 123 of the substrate 120. However, the present invention is not limited to this, and the metal plug 177 may be a metal plug connecting the semiconductor layer 123 and the junction 154a, similar to the metal plug 173. A signal processed by, for example, the signal processing circuit 121 is transmitted from the junction 154a to the semiconductor region 134 provided in the semiconductor layer 133 of the substrate 130 via the metal plug 175, the wiring pattern 135, and the metal plug 176. The semiconductor region 134 may constitute a part of the signal processing circuit 131, such as a transistor of the signal processing circuit 131. Also, for example, the semiconductor region 134 may constitute a part of each circuit, such as a transistor of the vertical scanning circuit 260, the horizontal scanning circuit 261, the readout circuit 262, the output circuit 264, and the control pulse generating circuit 265.

[0048] 7, in orthogonal projection onto bonding surfaces 161, 162, bonding portion 151a of bonding portion 151 between substrates 110 and 120, which is disposed at a position overlapping temperature detection element 141, may include a bonding portion in contact with metal plug 172. This makes it easier for the temperature around APD 201 to be transmitted to temperature detection element 141. As a result, the temperature detection accuracy can be further improved.

[0049] The junction 151a to which the metal plug 172 is in contact may be electrically connected to a wiring pattern 113 disposed in the insulating layer 112 of the substrate 110 via the metal plug 172. The wiring pattern 113 may further be electrically connected to the APD 201. The junction 151a is connected to the APD 201 via the metal plug 172, the wiring pattern 113, and the metal plug 171, so that the temperature of the APD 201 is easily transmitted to the temperature detection element 141. This can further improve the temperature detection accuracy. The wiring pattern 113 electrically connected to the junction 151a may be, for example, a wiring pattern to which a potential VH shown in FIG. 4 is supplied.

[0050] 8(a) to 8(d) are diagrams showing modified examples of the photoelectric conversion device 100 described with reference to FIGS. 6(a) to 6(d). In the configurations shown in FIGS. 6(a) to 6(d), the temperature value generating circuit 142 is disposed on the substrate 120. However, this is not limited to this. In the configurations shown in FIGS. 8(a) to 8(d), the temperature value generating circuit 142 is disposed on a chip 302 separate from the chip 301 on which the substrates 110, 120, and 130 are stacked. Other configurations may be the same as those described above.

[0051] The temperature value generating circuit 142 is disposed on a chip 302 separate from the chip 301 including the substrate 120. This allows the number of elements disposed on the substrate 120 to be reduced. In the configurations of FIGS. 6(a), 6(c), 8(a), and 8(c), only one combination of the temperature detection element 141 and the temperature value generating circuit 142 is shown. However, the photoelectric conversion device 100 (substrate 120) may have a plurality of combinations of the temperature detection element 141 and the temperature value generating circuit 142. In such a case, by disposing the temperature value generating circuit 142 on a chip 302 separate from the chip 301 (substrate 120) on which the temperature detection element 141 is disposed, the design of the substrate 120 may be facilitated.

[0052] 9(a) to 9(d) are diagrams showing modified examples of the photoelectric conversion device 100 described with reference to FIGS. 6(a) to 6(d). In the configurations shown in FIGS. 6(a) to 6(d), the temperature detection element 141 is disposed on the substrate 120. However, the arrangement of the temperature detection element 141 is not limited thereto. In the configurations shown in FIGS. 9(a) to 9(d), the temperature detection element 141 is disposed on the substrate 110. The other configurations may be the same as those described above.

[0053] Fig. 10 is a cross-sectional view showing a more detailed configuration example of the photoelectric conversion device 100 shown in Fig. 9(a) to 9(d). As shown in Fig. 10, a temperature detection element 141 shown as a diode including a semiconductor region 125 and a semiconductor region 126 having mutually opposite polarities is formed in a semiconductor layer 111 of a substrate 110. By arranging the temperature detection element 141 on the substrate 110 on which the APD 201 is arranged, the temperature detection accuracy can be improved.

[0054] The temperature value generating circuit 142 may be disposed on the substrate 120 as shown in Figures 9(a) to 9(d) and 10. This allows a process suitable for forming the APD 201 and the diode that is the temperature detecting element 141 to be adopted for the substrate 110. The temperature detecting element 141 is electrically connected to a semiconductor region 127 of a semiconductor layer 123 of the substrate 120 that constitutes a part of the temperature value generating circuit 142 via metal plugs 171 to 174, wiring patterns 113 and 128, a junction 151, and the like.

[0055] 10, in an orthogonal projection onto the joint surface 162 between the substrates 120 and 130, the temperature detection element 141 is disposed at a position overlapping an area 182 in which one or more joints 154b of the joints 154 that are not in contact with a metal plug are disposed. In other words, in an orthogonal projection onto the joint surface 162 between the substrates 120 and 130, the metal plug is not in contact with the joints 154b of the multiple joints 154 that are disposed at a position overlapping the temperature detection element 141. This makes it difficult for heat to be transferred from the substrate 130 to the temperature detection element 141 disposed on the substrate 110 via the substrate 120.

[0056] Also, as shown in FIG. 11, a wiring pattern electrically connected to the APD 201 may be arranged so as to surround at least a part of the wiring pattern electrically connected to the temperature detection element. FIG. 11 is a plan view between A-A' in FIG. 10, focusing on the wiring pattern 113 arranged on the insulating layer 112 of the substrate 110. The wiring pattern 311 is a wiring pattern of the wiring pattern 113 connected to the semiconductor region 114 constituting the APD 201. The wiring pattern 312 may be, for example, a wiring pattern to which the potential VL shown in FIG. 4 is supplied. The wiring pattern 312 is a wiring pattern of the wiring pattern 113 connected to the semiconductor region 115 constituting the APD 201. The wiring pattern 312 may be, for example, a wiring pattern to which the potential VH shown in FIG. 4 is supplied. The wiring pattern 313 is a wiring pattern of the wiring pattern 113 connected to the semiconductor region 125 constituting the temperature detection element 141. The wiring pattern 314 is a part of the wiring pattern 113 that is connected to the semiconductor region 126 that constitutes the temperature detection element 141 .

[0057] The wiring pattern 312 extends to the periphery of the temperature detection element 141 so as to surround the wiring patterns 313 and 314 connected to the temperature detection element 141. This makes it easier for the temperature of the APD 201 to be transmitted to the vicinity of the temperature detection element 141. As a result, the accuracy of temperature detection can be improved.

[0058] Figures 12(a) to 12(d) are diagrams showing modified examples of the photoelectric conversion device 100 described with reference to Figures 9(a) to 9(d). As with the configurations shown in Figures 8(a) to 8(d), the temperature value generating circuit 142 may be disposed on a chip 302 separate from the chip 301 on which the substrates 110, 120, and 130 are stacked. The other configurations may be the same as those described above.

[0059] 13 is a cross-sectional view showing a more detailed configuration example of the photoelectric conversion device 100 shown in FIGS. 12(a) to 12(d). In the configuration shown in FIG. 13, in an orthogonal projection onto the bonding surface 162 between the substrates 120 and 130, the temperature detection element 141 is disposed at a position overlapping an area 182 in which one or more bonding parts 154b of the bonding parts 154 that are not in contact with a metal plug are disposed. In other words, in an orthogonal projection onto the bonding surface 162 between the substrates 120 and 130, a metal plug is not in contact with the bonding part 154b of the multiple bonding parts 154 that is disposed at a position overlapping the temperature detection element 141. This makes it difficult for heat to be transmitted from the substrate 130 to the temperature detection element 141 disposed on the substrate 110 via the substrate 120.

[0060] 13, the joint surface 161 between the substrate 110 and the substrate 120 includes a region 183 in which one or more joints 151b of the joints 151 that are in contact with the metal plugs 172 and 173 are arranged, and a region 184 in which one or more joints 151c of the joints 151 that are not in contact with the metal plugs are arranged. In this case, in the orthogonal projection onto the joint surfaces 161 and 162, the temperature detection element 141 is arranged at a position overlapping the region 184. In other words, in the orthogonal projection onto the joint surface 161 between the substrate 110 and the substrate 120, the metal plug is not in contact with the joint 151c of the multiple joints 151 that is arranged at a position overlapping the temperature detection element 141. This further makes it difficult for heat to be transmitted from the substrate 130 to the temperature detection element 141 arranged on the substrate 110 via the substrate 120.

[0061] In the above-mentioned configurations, the configuration of the photoelectric conversion device 100 having a three-layer structure has been described. However, the photoelectric conversion device 100 is not limited to a three-layer structure. The photoelectric conversion device 100 may have a two-layer structure, or may have four or more layers of substrates stacked. When four or more layers of substrates are stacked, for example, an additional substrate may be stacked on the lower side (opposite side to the substrates 110 and 120) of the substrate 130 shown in FIG. 6(a). In the case of a three-layer structure, an example in which a circuit for processing a signal output from the substrate 110 is arranged so as to straddle the substrates 120 and 130 has been described in FIG. 6(a) to FIG. 9(d), but a signal processing circuit may be arranged only on the substrate 120. In this case, for example, a memory for holding a signal may be arranged on the substrate 130. In this case, the temperature detection element 141 may be arranged on the substrate 110. This makes it easier to arrange the temperature detection element 141 away from the signal processing circuit while detecting the temperature near the APD 201.

[0062] 14(a) to 14(c) and 15 show a configuration example of the photoelectric conversion device 100 in the case of a two-layer structure. FIG. 14(a) to 14(c) are diagrams showing an arrangement example of the temperature detection element 141 of the photoelectric conversion device 100. FIG. 14(a) shows the photoelectric conversion device 100 in which two layers of substrates 110 and 120 are stacked. FIG. 14(b) and 14(c) show an arrangement example of main circuits in the substrates 110 and 120. FIG. 15 is a cross-sectional view showing a more detailed configuration example of the photoelectric conversion device 100 shown in FIG. 14(a) to 14(c). When the photoelectric conversion device 100 has a two-layer structure of the substrates 110 and 120, for example, the circuits arranged on the substrates 120 and 130 in the above-mentioned three-layer structure may be arranged on one substrate 120, as shown in FIG. 14(c). The other configurations may be the same as those described above.

[0063] When the photoelectric conversion device 100 has a two-layer structure, the temperature detection element 141 may be disposed in the semiconductor layer 111 of the substrate 110. The temperature value generating circuit 142 may be disposed in a chip 302 other than the chip 301 in which the substrates 110 and 120 are laminated. In this case, in an orthogonal projection onto the bonding surface 161 between the substrates 110 and 120, the temperature detection element 141 is disposed at a position overlapping an area 184 in which one or more bonding parts 151c of the bonding parts 151 that are not in contact with a metal plug are disposed. In other words, in an orthogonal projection onto the bonding surface 161 between the substrates 110 and 120, a metal plug is not in contact with a bonding part 151c of the multiple bonding parts 151 that is disposed at a position overlapping the temperature detection element 141. As a result, even if the photoelectric conversion device 100 has a two-layer structure, heat is less likely to be transmitted from the substrate 120 to the temperature detection element 141 disposed on the substrate 110. That is, the temperature detection accuracy can be improved compared to the case where the temperature detection element 141 is disposed at a position overlapping the region 183 of the joint 151 where the joint 151b where the metal plugs 172, 173 are in contact is disposed.

[0064] Application examples of the photoelectric conversion device 100 according to the above embodiment will be described below.

[0065] The photoelectric conversion system according to the second embodiment will be described with reference to Fig. 16. Fig. 16 is a block diagram showing a schematic configuration of the photoelectric conversion system according to the present embodiment.

[0066] The photoelectric conversion device 100 described in the above embodiment is applicable to various photoelectric conversion systems. Examples of the applicable photoelectric conversion system include digital still cameras, digital camcorders, security cameras, copiers, fax machines, mobile phones, car-mounted cameras, and observation satellites. Camera modules equipped with an optical system such as a lens and an imaging device are also included in the photoelectric conversion system. FIG. 16 illustrates a block diagram of a digital still camera as an example of these.

[0067] 16 includes an image pickup device 1004 which is an example of a photoelectric conversion device, a lens 1002 which forms an optical image of a subject on the image pickup device 1004, an aperture 1003 which makes the amount of light passing through the lens 1002 variable, and a barrier 1001 which protects the lens 1002. The lens 1002 and the aperture 1003 are an optical system (optical device) which focuses light on the image pickup device 1004. The image pickup device 1004 is the photoelectric conversion device 100 (image pickup device) of any of the above embodiments, and converts the optical image formed by the lens 1002 into an electrical signal.

[0068] The photoelectric conversion system 1000 also has a signal processing unit 1007 which is an image generating unit that generates an image by processing an output signal output by the imaging device 1004. The signal processing unit 1007 functions as a processing device that performs various corrections and compression as necessary and outputs image data. The signal processing unit 1007 may be formed on a semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate separate from the imaging device 1004. Moreover, the imaging device 1004 and the signal processing unit 1007 may be formed on the same semiconductor substrate.

[0069] The photoelectric conversion system 1000 further includes a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system 1000 further includes a recording medium 1012 such as a semiconductor memory for recording or reading out imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading out data on the recording medium 1012. The recording medium control I / F unit 1011 and the recording medium 1012 may form part of a storage device. The recording medium 1012 may be built into the photoelectric conversion system 1000, or may be removable.

[0070] Furthermore, the photoelectric conversion system 1000 has an overall control / calculation unit 1009 that performs various calculations and controls the entire digital still camera, and a timing generation unit 1008 that outputs various timing signals to the image capture device 1004 and the signal processing unit 1007. The overall control / calculation unit 1009 and the timing generation unit 1008 may form a part of a control device for controlling the operation of the photoelectric conversion system 1000. Here, the timing signals and the like may be input from outside, and the photoelectric conversion system 1000 only needs to have at least the image capture device 1004 and the signal processing unit 1007 that processes the output signal output from the image capture device 1004.

[0071] The imaging device 1004 outputs an imaging signal to a signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal. Although not shown in FIG. 16, a display device such as a display for displaying the generated image may be arranged in the photoelectric conversion system 1000. In this way, according to this embodiment, it is possible to realize a photoelectric conversion system 1000 to which the photoelectric conversion device 100 (imaging device) of any of the above embodiments is applied.

[0072] A photoelectric conversion system 1300 and a moving object 1301 according to the third embodiment will be described with reference to Figures 17(a) and 17(b). Figures 17(a) and 17(b) are diagrams showing the configurations of the photoelectric conversion system 1300 and the moving object 1301 according to the present embodiment.

[0073] FIG. 17(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 1300 has an image capture device 1310. The image capture device 1310 is the photoelectric conversion device 100 (image capture device) described in any of the above embodiments. The photoelectric conversion system 1300 has an image processing unit 1312 that performs image processing on a plurality of image data acquired by the image capture device 1310. The photoelectric conversion system 1300 also has a distance acquisition unit 1316 that calculates a distance to an object, and a collision determination unit 1318 that determines whether or not there is a possibility of a collision based on the calculated distance. Here, the distance acquisition unit 1316 may acquire distance information to the object using a Time of Flight (ToF) method, or may acquire distance information using parallax information or the like. That is, the distance information is information related to parallax, defocus amount, distance to the object, and the like. The collision determination unit 1318 may determine the possibility of a collision using any of these distance information. The distance acquisition unit 1316 may be realized by dedicated hardware or a software module. The distance acquisition unit 1316 may also be realized by a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or a combination of these.

[0074] The photoelectric conversion system 1300 is connected to a vehicle information acquisition device 1320, and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. The photoelectric conversion system 1300 is also connected to an ECU 1330, which is a control device that outputs a control signal to generate a braking force for the vehicle based on the judgment result of the collision judgment unit 1318. The photoelectric conversion system 1300 is also connected to an alarm device 1340 that issues an alarm to the driver based on the judgment result of the collision judgment unit 1318. For example, when the judgment result of the collision judgment unit 1318 indicates that there is a high possibility of a collision, the ECU 1330 controls the driving device (mechanical device) 1360, such as by applying the brakes, releasing the accelerator, or suppressing the engine output, to perform vehicle control to avoid a collision and reduce damage. The alarm device 1340 warns the user by sounding an alarm, displaying alarm information on a screen of a car navigation system, or applying vibrations to a seat belt or steering wheel.

[0075] In this embodiment, the surroundings of a vehicle (mobile body 1301), for example, the front or rear, are imaged by a photoelectric conversion system 1300. Fig. 17(b) shows a photoelectric conversion system for imaging the area in front of the vehicle (imaging range 1350). A vehicle information acquisition device 1320 sends instructions to the photoelectric conversion system 1300 or the imaging device 1310. This configuration can further improve the accuracy of distance measurement.

[0076] Although the above describes an example of control to prevent collision with other vehicles, the photoelectric conversion system 1300 can also be applied to control of automatic driving by following other vehicles, control of automatic driving to prevent deviation from a lane, and the like. Furthermore, the photoelectric conversion system 1300 can be applied not only to vehicles such as automobiles, but also to moving bodies (moving devices) such as ships, aircraft, and industrial robots. The moving body includes one or both of a driving force generating unit that generates a driving force mainly used for the movement of the moving body, and a rotating body mainly used for the movement of the moving body. The driving force generating unit can be an engine, a motor, and the like. The rotating body can be a tire, a wheel, a screw of a ship, a propeller of an aircraft, and the like. In addition, the photoelectric conversion system 1300 can be applied not only to moving bodies, but also to a wide range of devices that use object recognition, such as an intelligent transport system (ITS).

[0077] A photoelectric conversion system according to the fourth embodiment will be described with reference to Fig. 18. Fig. 18 is a block diagram showing an example of the arrangement of a range image sensor 1401 which is the photoelectric conversion system according to this embodiment.

[0078] 18, the distance image sensor 1401 is configured to include an optical system 1407, a photoelectric conversion device 1408, an image processing circuit 1404, a monitor 1405, and a memory 1406. The distance image sensor 1401 can obtain a distance image according to the distance to the subject by receiving light (modulated light or pulsed light) that is projected from a light source device 1409 toward the subject and reflected by the surface of the subject.

[0079] The optical system 1407 is configured to have one or more lenses, and guides image light (incident light) from a subject to a photoelectric conversion device 1408 , forming an image on the light receiving surface (sensor portion) of the photoelectric conversion device 1408 .

[0080] The photoelectric conversion device 1408 is the photoelectric conversion device 100 according to any one of the above-described embodiments. A distance signal indicating a distance determined from a received light signal output from the photoelectric conversion device 1408 is supplied to the image processing circuit 1404 .

[0081] The image processing circuit 1404 performs image processing to construct a distance image based on the distance signal supplied from the photoelectric conversion device 1408. The distance image (image data) obtained by this image processing is then supplied to a monitor 1405 for display, or supplied to a memory 1406 for storage (recording).

[0082] In the range image sensor 1401 configured in this way, by applying the above-described photoelectric conversion device 100, it is possible to obtain, for example, a more accurate range image as the pixel characteristics improve.

[0083] The photoelectric conversion system of the fifth embodiment will be described with reference to Fig. 19. Fig. 19 is a diagram showing an example of a schematic configuration of an endoscopic surgery system 1250 which is the photoelectric conversion system of this embodiment.

[0084] 19 shows a state in which an operator (doctor) 1231 is performing surgery on a patient 1232 on a patient bed 1233 using an endoscopic surgery system 1250. As shown in the figure, the endoscopic surgery system 1250 includes an endoscope 1200, a surgical tool 1210, and a cart 1234 on which various devices for endoscopic surgery are mounted.

[0085] The endoscope 1200 includes a lens barrel 1201, a region of a predetermined length from the tip of which is inserted into a body cavity of a patient 1232, and a camera head 1202 connected to a base end of the lens barrel 1201. In the illustrated example, the endoscope 1200 is configured as a so-called rigid lens barrel having a rigid lens barrel 1201, but the endoscope 1200 may be configured as a so-called flexible lens barrel having a flexible lens barrel.

[0086] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 1201. A light source device 1203 is connected to the endoscope 1200, and light generated by the light source device 1203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 1201, and is irradiated via the objective lens toward an observation target in a body cavity of a patient 1232. The endoscope 1200 may be a direct-viewing endoscope, an oblique-viewing endoscope, or a side-viewing endoscope.

[0087] An optical system and a photoelectric conversion device are provided inside the camera head 1202, and reflected light (observation light) from an observation target is collected by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device to generate an electrical signal corresponding to the observation light, i.e., an image signal corresponding to an observation image. The photoelectric conversion device may be the photoelectric conversion device 100 (imaging device) described in each of the above-described embodiments. The image signal is transmitted to a camera control unit (CCU: Camera Control Unit) 1235 as RAW data.

[0088] The CCU 1235 is configured with a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and performs overall control of the operations of the endoscope 1200 and the display device 1236. Furthermore, the CCU 1235 receives an image signal from the camera head 1202, and performs various types of image processing on the image signal, such as development processing (demosaic processing), for displaying an image based on the image signal.

[0089] Under the control of the CCU 1235 , the display device 1236 displays an image based on an image signal that has been subjected to image processing by the CCU 1235 .

[0090] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies the endoscope 1200 with irradiation light when imaging an operation site or the like.

[0091] The input device 1237 is an input interface for the endoscopic surgery system 1250. A user can input various information and instructions to the endoscopic surgery system 1250 via the input device 1237.

[0092] The treatment tool control device 1238 controls the driving of the energy treatment tool 1212 for cauterizing tissue, incising, sealing blood vessels, or the like.

[0093] The light source device 1203 that supplies irradiation light to the endoscope 1200 when photographing the surgical site can be composed of, for example, a white light source composed of an LED, a laser light source, or a combination of these. When the white light source is composed of a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision, so that the white balance of the captured image can be adjusted in the light source device 1203. In this case, it is also possible to capture images corresponding to each of the RGB colors in a time-division manner by irradiating the observation target with laser light from each of the RGB laser light sources in a time-division manner and controlling the driving of the image sensor of the camera head 1202 in synchronization with the irradiation timing. According to this method, a color image can be obtained without providing a color filter to the image sensor.

[0094] Furthermore, the light source device 1203 may be controlled to change the intensity of the light it outputs at predetermined time intervals. By controlling the driving of the image sensor of the camera head 1202 in synchronization with the timing of the change in the light intensity to acquire images in a time-division manner and synthesizing the images, it is possible to generate an image with a high dynamic range that is free of so-called blocked-up shadows and blown-out highlights.

[0095] The light source device 1203 may be configured to supply light in a predetermined wavelength band corresponding to the special light observation. In the special light observation, for example, the wavelength dependency of light absorption in body tissue is utilized. Specifically, a predetermined tissue such as blood vessels on the mucous membrane surface is photographed with high contrast by irradiating light in a narrow band compared to the irradiation light (i.e., white light) during normal observation. Alternatively, in the special light observation, a fluorescent observation may be performed in which an image is obtained using fluorescence generated by irradiating excitation light. In the fluorescent observation, it is possible to irradiate excitation light to the body tissue and observe the fluorescence from the body tissue, or to locally inject a reagent such as indocyanine green (ICG) into the body tissue and irradiate the body tissue with excitation light corresponding to the fluorescent wavelength of the reagent to obtain a fluorescent image. The light source device 1203 may be configured to supply narrow band light and / or excitation light corresponding to such special light observation.

[0096] A photoelectric conversion system according to the sixth embodiment will be described with reference to Figs. 20(a) and 20(b). Fig. 20(a) describes glasses 1600 (smart glasses) which are the photoelectric conversion system according to this embodiment. The glasses 1600 have a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device 100 (imaging device) described in each of the above embodiments. A display device including a light-emitting device such as an OLED or LED may be provided on the rear side of the lens 1601. The photoelectric conversion device 1602 may be one or more. A combination of multiple types of photoelectric conversion devices may also be used. The arrangement position of the photoelectric conversion device 1602 is not limited to that shown in Fig. 20(a).

[0097] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the photoelectric conversion device 1602 and the display device. The control device 1603 also controls the operations of the photoelectric conversion device 1602 and the display device. The lens 1601 is formed with an optical system for focusing light on the photoelectric conversion device 1602.

[0098] FIG. 20(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and the control device 1612 is equipped with a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device. The lens 1611 is formed with a photoelectric conversion device in the control device 1612 and an optical system for projecting light emitted from the display device, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the photoelectric conversion device and the display device, and controls the operation of the photoelectric conversion device and the display device. The control device may have a line of sight detection unit that detects the line of sight of the wearer. Infrared light may be used for detecting the line of sight. The infrared light emission unit emits infrared light toward the eyeball of a user gazing at a display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an image of the eyeball. By having a reduction means for reducing light from the infrared light emission unit to the display unit in a planar view, deterioration of image quality is reduced.

[0099] The gaze of the user with respect to the displayed image is detected from an image of the eyeball obtained by capturing infrared light. Any known method can be applied to gaze detection using the image of the eyeball. As an example, a gaze detection method based on a Purkinje image formed by reflection of irradiated light on the cornea can be used.

[0100] More specifically, a gaze detection process based on the pupil-corneal reflex method is performed. Using the pupil-corneal reflex method, a gaze vector that indicates the direction (rotation angle) of the eyeball is calculated based on the pupil image and the Purkinje image included in the captured image of the eyeball, thereby detecting the user's gaze.

[0101] The display device of this embodiment may have a photoelectric conversion device having a light receiving element, and may control the display image of the display device based on information on the user's line of sight from the photoelectric conversion device.

[0102] Specifically, the display device determines a first field of view area to which the user gazes and a second field of view area other than the first field of view area based on the line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be received from an external control device. In the display area of ​​the display device, the display resolution of the first field of view area may be controlled to be higher than the display resolution of the second field of view area. In other words, the resolution of the second field of view area may be lower than that of the first field of view area.

[0103] The display area may have a first display area and a second display area different from the first display area, and a high priority area may be determined from the first display area and the second display area based on line-of-sight information. The first field of view area and the second field of view area may be determined by a control device of the display device, or may be received from an external control device. The resolution of the high priority area may be controlled to be higher than the resolution of areas other than the high priority area. In other words, the resolution of an area with a relatively low priority may be lowered.

[0104] In addition, AI may be used to determine the first field of view area and the area with high priority. The AI ​​may be a model configured to estimate the angle of the line of sight and the distance to an object at the end of the line of sight from the image of the eyeball, using the image of the eyeball and the direction in which the eyeball in the image was actually looking as teacher data. The AI ​​program may be included in the display device, the photoelectric conversion device, or an external device. If included in the external device, it is transmitted to the display device via communication.

[0105] When display control is performed based on visual recognition detection, the present invention is preferably applicable to smart glasses further including a photoelectric conversion device for capturing an image of the outside world. The smart glasses can display captured outside information in real time.

[0106] The seventh embodiment will be described with reference to Figures 21(a) and 21(b). The above-described photoelectric conversion device and photoelectric conversion system may be applied to electronic devices such as so-called smartphones and tablets.

[0107] 21(a) and 21(b) are diagrams showing an example of an electronic device 1500 equipped with a photoelectric conversion device. Fig. 21(a) shows the front side of the electronic device 1500, and Fig. 21(b) shows the rear side of the electronic device 1500.

[0108] 21(a), a display 1510 for displaying an image is disposed in the center of the surface of the electronic device 1500. Then, along the upper side of the surface of the electronic device 1500, front cameras 1521 and 1522 using the above-mentioned photoelectric conversion device 100, an IR light source 1530 for emitting infrared light, and a visible light source 1540 for emitting visible light are disposed.

[0109] Also, as shown in FIG. 21(b), along the upper edge of the back surface of the electronic device 1500, rear cameras 1551 and 1552 using the above-mentioned photoelectric conversion device 100, an IR light source 1560 that emits infrared light, and a visible light source 1570 that emits visible light are arranged.

[0110] In the electronic device 1500 configured in this manner, by applying the above-mentioned photoelectric conversion device 100, for example, it is possible to capture a higher quality image. Note that the photoelectric conversion device can also be applied to other electronic devices such as infrared sensors, distance measuring sensors using active infrared light sources, security cameras, and personal or biometric authentication cameras. This can improve the accuracy, performance, and the like of these electronic devices.

[0111] 22 is a block diagram of the X-ray CT device in this embodiment. The above-mentioned photoelectric conversion device 100 is applicable to the detector of the X-ray CT device. The X-ray CT device 30 in this embodiment includes an X-ray generation unit 310, a wedge 316, a collimator 318, an X-ray detection unit 320, a top plate 330, a rotating frame 340, a high-voltage generation device 350, a data acquisition system (DAS) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0112] The X-ray generating unit 310 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current are supplied to the vacuum tube of the X-ray generating unit 310 from a high voltage generator 350. X-rays are generated by irradiating thermal electrons from the cathode (filament) toward the anode (target).

[0113] The wedge 316 is a filter that adjusts the amount of X-rays irradiated from the X-ray generation unit 310. The wedge 316 attenuates the amount of X-rays so that the X-rays irradiated from the X-ray generation unit 310 to the subject have a predetermined distribution. The collimator 318 is composed of a lead plate or the like that narrows down the irradiation range of the X-rays that have passed through the wedge 316. The X-rays generated by the X-ray generation unit 310 are shaped into a cone beam via the collimator 318 and irradiated to the subject on the tabletop 330.

[0114] The X-ray detection unit 320 is configured using the above-mentioned photoelectric conversion device 100. The X-ray detection unit 320 detects X-rays emitted from the X-ray generation unit 310 and transmitted through the subject, and outputs a signal corresponding to the X-ray dose to the DAS 351.

[0115] The rotating frame 340 has an annular shape and is configured to be rotatable. An X-ray generation unit 310 (wedge 316, collimator 318) and an X-ray detection unit 320 are arranged facing each other inside the rotating frame 340. The X-ray generation unit 310 and the X-ray detection unit 320 are rotatable together with the rotating frame 340.

[0116] The high voltage generator 350 includes a boost circuit, and outputs a high voltage to the X-ray generation unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs a signal from the X-ray detection unit 320 to the signal processing unit 352 as digital data.

[0117] The signal processing unit 352 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is capable of performing image processing on digital data. The display unit 353 includes a flat display device, and is capable of displaying X-ray images. The control unit 354 includes a CPU, a ROM, a RAM, and the like, and controls the operation of the entire X-ray CT device 30.

[0118] The above-described embodiments can be modified as appropriate without departing from the technical concept. The disclosure of this specification includes not only what is described in this specification, but also all matters that can be understood from this specification and the drawings attached hereto. The disclosure of this specification also includes the complement of the concepts described in this specification. In other words, if this specification contains a statement that "A is greater than B," for example, this specification can be said to disclose that "A is not greater than B" even if the statement that "A is not greater than B" is omitted. This is because when it is stated that "A is greater than B," it is assumed that the case in which "A is not greater than B" is taken into consideration.

[0119] The disclosure of the present specification includes the following configurations.

[0120] (Item 1) A photoelectric conversion device including a first substrate including an avalanche photodiode, a second substrate, a third substrate, and a temperature detection element having an output characteristic dependent on temperature, a signal processing circuit for processing a signal output from the avalanche photodiode is disposed on at least a part of the second substrate and the third substrate; the first substrate, the second substrate, and the third substrate are stacked such that the second substrate is disposed between the first substrate and the third substrate; The photoelectric conversion device, wherein the temperature detection element is disposed on the first substrate or the second substrate.

[0121] (Item 2) the second substrate includes a first semiconductor layer and a first insulating layer disposed between the first semiconductor layer and the third substrate; the third substrate includes a second semiconductor layer and a second insulating layer disposed between the second semiconductor layer and the first insulating layer; the second substrate and the third substrate are bonded via a plurality of first bonding portions, In each of the plurality of first bonding portions, a metal pattern arranged on a surface of the first insulating layer facing the third substrate is in contact with a metal pattern arranged on a surface of the second insulating layer facing the second substrate, a bonding surface between the second substrate and the third substrate includes a first region in which one or more of the first bonding portions are arranged, the one or more bonding portions being in contact with a metal plug, and a second region in which one or more of the first bonding portions are arranged, the one or more bonding portions being not in contact with a metal plug, 2. The photoelectric conversion device according to item 1, wherein the temperature detection element is disposed at a position overlapping the second region in an orthogonal projection onto the junction surface.

[0122] (Item 3) the second substrate includes a first semiconductor layer and a first insulating layer disposed between the first semiconductor layer and the third substrate; the third substrate includes a second semiconductor layer and a second insulating layer disposed between the second semiconductor layer and the first insulating layer; the second substrate and the third substrate are bonded via a plurality of first bonding portions, In each of the plurality of first bonding portions, a metal pattern arranged on a surface of the first insulating layer facing the third substrate is in contact with a metal pattern arranged on a surface of the second insulating layer facing the second substrate, The photoelectric conversion device described in item 1, characterized in that, in an orthogonal projection onto the bonding surface between the second substrate and the third substrate, a metal plug is not in contact with a bonding portion among the multiple first bonding portions that is arranged at a position overlapping the temperature detection element.

[0123] (Item 4) a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, 4. The photoelectric conversion device according to item 2 or 3, wherein the temperature detection element and the temperature value generation circuit are disposed on the second substrate.

[0124] (Item 5) a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, The temperature detection element is disposed on the second substrate, The photoelectric conversion device described in item 2 or 3, characterized in that the temperature value generating circuit is arranged on a chip separate from the chip on which the first substrate, the second substrate, and the third substrate are stacked.

[0125] (Item 6) the second substrate further includes a third insulating layer disposed between the first semiconductor layer and the first substrate; the first substrate includes a third semiconductor layer and a fourth insulating layer disposed between the third semiconductor layer and the third insulating layer; the first substrate and the second substrate are bonded via a plurality of second bonding portions, In each of the plurality of second bonding portions, a metal pattern arranged on a surface of the third insulating layer facing the first substrate is in contact with a metal pattern arranged on a surface of the fourth insulating layer facing the second substrate, 6. The photoelectric conversion device according to item 4 or 5, wherein, in an orthogonal projection onto the junction surface, among the plurality of second junctions, a second junction arranged at a position overlapping the temperature detection element includes a junction in contact with a metal plug.

[0126] (Item 7) The photoelectric conversion device described in item 6, characterized in that among the plurality of second junctions, a junction to which a metal plug is in contact is electrically connected to a wiring pattern arranged in the fourth insulating layer via a metal plug connected to the junction to which the metal plug is in contact.

[0127] (Item 8) 8. The photoelectric conversion device according to item 7, wherein the wiring pattern is electrically connected to the avalanche photodiode.

[0128] (Item 9) 4. The photoelectric conversion device according to item 2 or 3, wherein the temperature detection element is disposed on the first substrate.

[0129] (Item 10) 10. The photoelectric conversion device according to item 9, characterized in that a wiring pattern electrically connected to the avalanche photodiode is arranged to surround at least a portion of a wiring pattern electrically connected to the temperature detection element.

[0130] (Item 11) a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, 11. The photoelectric conversion device according to item 9 or 10, wherein the temperature value generating circuit is disposed on the second substrate.

[0131] (Item 12) a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, The photoelectric conversion device described in item 9 or 10, characterized in that the temperature value generating circuit is arranged on a chip separate from the chip on which the first substrate, the second substrate, and the third substrate are stacked.

[0132] (Item 13) the second substrate further includes a third insulating layer disposed between the first semiconductor layer and the first substrate; the first substrate includes a third semiconductor layer and a fourth insulating layer disposed between the third semiconductor layer and the third insulating layer; the first substrate and the second substrate are bonded via a plurality of second bonding portions, In each of the plurality of second bonding portions, a metal pattern arranged on a surface of the third insulating layer facing the first substrate is in contact with a metal pattern arranged on a surface of the fourth insulating layer facing the second substrate, The bonding surface between the first substrate and the second substrate includes a third region in which one or more of the second bonding portions are in contact with a metal plug, and a fourth region adjacent to the third region in which one or more of the second bonding portions are not in contact with a metal plug. 13. The photoelectric conversion device according to item 12, wherein the temperature detection element is disposed at a position overlapping the fourth region in an orthogonal projection onto the junction surface.

[0133] (Item 14) A photoelectric conversion device described in any one of items 1 to 13, characterized in that the signal processing circuits arranged on the second substrate among the signal processing circuits include transistors supplied with a higher power supply voltage than the signal processing circuits arranged on the third substrate among the signal processing circuits.

[0134] (Item 15) 15. The photoelectric conversion device according to any one of items 1 to 14, wherein the temperature detection element includes a diode.

[0135] (Item 16) Item 16. The photoelectric conversion device according to item 15, wherein the diode is larger than the avalanche photodiode in a plan view.

[0136] (Item 17) A photoelectric conversion device comprising: a first substrate including an avalanche photodiode; a second substrate including a signal processing circuit for processing a signal output from the avalanche photodiode; and a temperature detection element having an output characteristic dependent on temperature, the first substrate and the second substrate are laminated, The temperature detection element is disposed on the first substrate, the first substrate includes a first semiconductor layer and a first insulating layer disposed between the first semiconductor layer and the second substrate; the second substrate includes a second semiconductor layer and a second insulating layer disposed between the second semiconductor layer and the first insulating layer; The first substrate and the second substrate are joined via a plurality of joints, In each of the plurality of joints, a metal pattern arranged on a surface of the first insulating layer facing the second substrate is in contact with a metal pattern arranged on a surface of the second insulating layer facing the first substrate, The bonding surface between the first substrate and the second substrate includes a first region in which one or more of the bonding portions are in contact with a metal plug, and a second region in which one or more of the bonding portions are not in contact with a metal plug. A photoelectric conversion device, characterized in that, in an orthogonal projection onto the junction surface, the temperature detection element is disposed in a position overlapping the second region.

[0137] (Item 18) A photoelectric conversion device according to any one of items 1 to 17, a signal processing unit that generates an image using a signal output from the photoelectric conversion device; A photoelectric conversion system comprising:

[0138] (Item 19) A moving object including the photoelectric conversion device according to any one of items 1 to 17, A moving body comprising: a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

[0139] (Item 20) An apparatus including the photoelectric conversion device according to any one of items 1 to 17, an optical device corresponding to the photoelectric conversion device; A control device for controlling the photoelectric conversion device; a processing device that processes a signal output from the photoelectric conversion device; a display device that displays information obtained by the photoelectric conversion device; a storage device that stores information obtained by the photoelectric conversion device; and and a mechanical device that operates based on information obtained by the photoelectric conversion device.

[0140] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0141] 100: photoelectric conversion device, 110, 120, 130: substrate, 121, 131: signal processing circuit, 141: temperature detection element, 201: avalanche photodiode

Claims

1. A photoelectric conversion device including a first substrate including an avalanche photodiode, a second substrate, a third substrate, and a temperature detection element having an output characteristic dependent on temperature, a signal processing circuit for processing a signal output from the avalanche photodiode is disposed on at least a part of the second substrate and the third substrate; the first substrate, the second substrate, and the third substrate are stacked such that the second substrate is disposed between the first substrate and the third substrate; The photoelectric conversion device, wherein the temperature detection element is disposed on the first substrate or the second substrate.

2. the second substrate includes a first semiconductor layer and a first insulating layer disposed between the first semiconductor layer and the third substrate; the third substrate includes a second semiconductor layer and a second insulating layer disposed between the second semiconductor layer and the first insulating layer; the second substrate and the third substrate are joined via a plurality of first joints, In each of the plurality of first bonding portions, a metal pattern arranged on a surface of the first insulating layer facing the third substrate is in contact with a metal pattern arranged on a surface of the second insulating layer facing the second substrate, a bonding surface between the second substrate and the third substrate includes a first region in which one or more of the first bonding portions are disposed, the one or more bonding portions being in contact with a metal plug, and a second region in which one or more of the first bonding portions are disposed, the one or more bonding portions being not in contact with a metal plug, The photoelectric conversion device according to claim 1 , wherein the temperature detection element is disposed at a position overlapping the second region in an orthogonal projection onto the junction surface.

3. the second substrate includes a first semiconductor layer and a first insulating layer disposed between the first semiconductor layer and the third substrate; the third substrate includes a second semiconductor layer and a second insulating layer disposed between the second semiconductor layer and the first insulating layer; the second substrate and the third substrate are joined via a plurality of first joints, In each of the plurality of first bonding portions, a metal pattern arranged on a surface of the first insulating layer facing the third substrate is in contact with a metal pattern arranged on a surface of the second insulating layer facing the second substrate, The photoelectric conversion device according to claim 1, characterized in that, in an orthogonal projection onto the bonding surface between the second substrate and the third substrate, no metal plug is in contact with a bonding portion among the multiple first bonding portions that is arranged at a position overlapping the temperature detection element.

4. a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, 3. The photoelectric conversion device according to claim 2, wherein the temperature detection element and the temperature value generation circuit are disposed on the second substrate.

5. a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, The temperature detection element is disposed on the second substrate, 3. The photoelectric conversion device according to claim 2, wherein the temperature value generating circuit is arranged on a chip separate from a chip on which the first substrate, the second substrate, and the third substrate are stacked.

6. the second substrate further includes a third insulating layer disposed between the first semiconductor layer and the first substrate; the first substrate includes a third semiconductor layer and a fourth insulating layer disposed between the third semiconductor layer and the third insulating layer; The first substrate and the second substrate are joined via a plurality of second joints, In each of the plurality of second bonding portions, a metal pattern arranged on a surface of the third insulating layer facing the first substrate is in contact with a metal pattern arranged on a surface of the fourth insulating layer facing the second substrate, The photoelectric conversion device according to claim 4, characterized in that, in an orthogonal projection onto the junction surface, among the plurality of second junctions, a second junction arranged at a position overlapping the temperature detection element includes a junction in contact with a metal plug.

7. The photoelectric conversion device according to claim 6, characterized in that the junctions among the plurality of second junctions to which the metal plugs are in contact are electrically connected to a wiring pattern arranged in the fourth insulating layer via a metal plug connected to the junctions to which the metal plugs are in contact.

8. 8. The photoelectric conversion device according to claim 7, wherein the wiring pattern is electrically connected to the avalanche photodiode.

9. The photoelectric conversion device according to claim 2 , wherein the temperature detection element is disposed on the first substrate.

10. 10. The photoelectric conversion device according to claim 9, wherein a wiring pattern electrically connected to the avalanche photodiode is arranged so as to surround at least a portion of a wiring pattern electrically connected to the temperature detection element.

11. a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, The photoelectric conversion device according to claim 9 , wherein the temperature value generating circuit is disposed on the second substrate.

12. a temperature value generating circuit for generating a signal indicating temperature information from an output of the temperature detection element, 10. The photoelectric conversion device according to claim 9, wherein the temperature value generating circuit is arranged on a chip separate from a chip on which the first substrate, the second substrate, and the third substrate are stacked.

13. the second substrate further includes a third insulating layer disposed between the first semiconductor layer and the first substrate; the first substrate includes a third semiconductor layer and a fourth insulating layer disposed between the third semiconductor layer and the third insulating layer; The first substrate and the second substrate are joined via a plurality of second joints, In each of the plurality of second bonding portions, a metal pattern arranged on a surface of the third insulating layer facing the first substrate is in contact with a metal pattern arranged on a surface of the fourth insulating layer facing the second substrate, The bonding surface between the first substrate and the second substrate includes a third region in which one or more of the second bonding portions that are in contact with a metal plug are disposed, and a fourth region adjacent to the third region in which one or more of the second bonding portions that are not in contact with a metal plug are disposed. The photoelectric conversion device according to claim 12 , wherein the temperature detection element is disposed at a position overlapping the fourth region in an orthogonal projection onto the junction surface.

14. The photoelectric conversion device according to claim 1, characterized in that the signal processing circuits arranged on the second substrate among the signal processing circuits include transistors supplied with a higher power supply voltage than the signal processing circuits arranged on the third substrate among the signal processing circuits.

15. The photoelectric conversion device according to claim 1 , wherein the temperature detection element includes a diode.

16. 16. The photoelectric conversion device according to claim 15, wherein the diode is larger than the avalanche photodiode in a plan view.

17. A photoelectric conversion device comprising: a first substrate including an avalanche photodiode; a second substrate including a signal processing circuit for processing a signal output from the avalanche photodiode; and a temperature detection element having an output characteristic dependent on temperature, the first substrate and the second substrate are laminated, The temperature detection element is disposed on the first substrate, the first substrate includes a first semiconductor layer and a first insulating layer disposed between the first semiconductor layer and the second substrate; the second substrate includes a second semiconductor layer and a second insulating layer disposed between the second semiconductor layer and the first insulating layer; The first substrate and the second substrate are joined via a plurality of joints, In each of the plurality of joints, a metal pattern arranged on a surface of the first insulating layer facing the second substrate is in contact with a metal pattern arranged on a surface of the second insulating layer facing the first substrate, The bonding surface between the first substrate and the second substrate includes a first region in which one or more of the bonding portions that are in contact with a metal plug are arranged, and a second region in which one or more of the bonding portions that are not in contact with a metal plug are arranged. The photoelectric conversion device, wherein the temperature detection element is disposed at a position overlapping the second region in an orthogonal projection onto the junction surface.

18. A photoelectric conversion device according to any one of claims 1 to 17, a signal processing unit that generates an image using a signal output from the photoelectric conversion device; An apparatus comprising:

19. A moving object comprising the photoelectric conversion device according to any one of claims 1 to 17, A moving body comprising: a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

20. An apparatus comprising the photoelectric conversion device according to any one of claims 1 to 17, an optical device corresponding to the photoelectric conversion device; A control device for controlling the photoelectric conversion device; a processing device that processes a signal output from the photoelectric conversion device; a display device that displays information obtained by the photoelectric conversion device; a storage device that stores information obtained by the photoelectric conversion device; and and a mechanical device that operates based on information obtained by the photoelectric conversion device.

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