Semiconductor device and electric power conversion system

Abstract

To solve the problem of thermal deformation of a protrusion in the reflow process in semiconductor devices with the protrusion that positions the control substrate to be stacked.SOLUTION: A power module 3a comprises a heat sink 30, a power device 20 mounted on the heat sink 30, and a module case 10 in which a substrate unit controlling the power device 20 is stacked and also fixed to the heat sink 30, and the module case 10 has a resin case body 12 with a protrusion 12b for positioning the substrate unit, and a thermal conductive rod 13, which is encased in the case body 12 so that at least a part thereof is located inside the protrusion 12b and has a higher thermal conductivity than the case body 12.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a semiconductor device and a power conversion device. [Background technology]

[0002] For example, Patent Document 1 discloses a transistor module in which a plurality of transistors and peripheral circuits are integrated in one package. The transistor module disclosed in Patent Document 1 is provided with guide pins for the transistor module. Furthermore, the guide pins are inserted into the printed circuit board, so that the printed circuit board is positioned with respect to the transistor module. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 3491411 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, the transistor module disclosed in Patent Document 1 is a semiconductor device equipped with semiconductor elements such as IGBTs. In such a semiconductor device, it is conceivable to provide a protruding portion such as the above-mentioned guide pin on a resin case to position a control board stacked on the case. However, the protruding portion on the resin case is formed of resin. Such a protruding portion may protrude toward a heat source in the reflow process or have a smaller heat capacity than other parts of the case, and may be thermally deformed in the reflow process. If the protruding portion is thermally deformed, it may be difficult to accurately position the control board.

[0005] The present invention has been made in consideration of the above-mentioned problems, and aims to prevent thermal deformation of protrusions in semiconductor devices having protrusions that position stacked control boards during the reflow process. [Means for solving the problem]

[0006] The present invention employs the following configuration as a means for solving the above problems.

[0007] A first aspect of the present invention is a semiconductor device comprising a heat sink, a semiconductor substrate mounted on the heat sink, and a case on which a control substrate for controlling the semiconductor substrate is stacked and which is fixed to the heat sink, the case having a resin case body having a protrusion for positioning the control substrate, and a heat conductive member which is contained within the case body such that at least a portion of the heat conductive member is located inside the protrusion and has a higher thermal conductivity than the case body.

[0008] A second aspect of the present invention is a power conversion device that includes the semiconductor device of the first aspect and performs power conversion using the semiconductor device. Effect of the Invention

[0009] According to the present invention, a heat conductive member having a higher thermal conductivity than a resin case body is located inside a protrusion provided on the case body. Therefore, heat received by the protrusion during the reflow process is transferred from the protrusion to other parts via the heat conductive member. Therefore, it is possible to suppress an increase in temperature of the protrusion during the reflow process and to suppress thermal deformation of the protrusion. Therefore, the present invention can suppress thermal deformation of the protrusion during the reflow process in a semiconductor device having a protrusion that positions a control board to be stacked. [Brief description of the drawings]

[0010] [Figure 1] FIG. 2 is a circuit diagram showing a schematic electrical configuration of a power conversion device according to a first embodiment of the present invention. [Diagram 2] FIG. 1 is an exploded perspective view showing a schematic structural configuration of a power conversion device according to a first embodiment of the present invention. [Diagram 3] FIG. 2 is a schematic exploded perspective view of a power module included in the power conversion device according to the first embodiment of the present invention. [Figure 4] FIG. 4 is a schematic enlarged cross-sectional view including one power device of the power module in the first embodiment of the present invention, and is a cross-sectional view taken along the line AA in FIG. [Diagram 5] 4 is a flowchart showing a part of a manufacturing process of the power module according to the first embodiment of the present invention. [Figure 6] FIG. 11 is a schematic enlarged cross-sectional view including one power device of a power module according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of a semiconductor device and a power conversion device according to the present invention will be described with reference to the drawings.

[0012] (First embodiment) 1 is a circuit diagram showing a schematic electrical configuration of a power conversion device 1 of this embodiment. The power conversion device 1 of this embodiment is mounted on a vehicle such as an electric car, and is provided between a motor M and a battery B. The power conversion device 1 of this embodiment performs power conversion between the motor M and the battery B. For example, the power conversion device 1 of this embodiment converts DC power supplied from the battery B into three-phase AC power and supplies it to the motor M. The power conversion device 1 also converts regenerative power (AC power) from the motor M into DC power and supplies it to the battery B.

[0013] The power conversion device 1 of this embodiment has a power conversion circuit H as shown in Fig. 1. The power conversion circuit H converts DC power into AC power as described above. Also, the power conversion circuit H converts AC power into DC power. Such a power conversion circuit H includes a capacitor C and an inverter circuit E. Note that the power conversion device 1 may include, for example, a step-up / step-down converter or a DC-DC converter (not shown). Also, when the vehicle includes multiple motors M, the power conversion device 1 may include multiple inverter circuits E.

[0014] Moreover, the power conversion device 1 of this embodiment includes conductive lines BU through which power is conducted. For example, the power conversion device 1 of this embodiment includes a conductive line BU that connects the inverter circuit E and the battery B, and a conductive line BU that connects the inverter circuit E and the motor M.

[0015] As shown in FIG. 1, the inverter circuit E includes three legs R corresponding to the respective phases of the motor M. Each leg R includes an upper arm HA and a lower arm LA. The upper arm HA is connected to the positive electrode side of a battery B via a conductive line BU. The lower arm LA is connected to the negative electrode side of the battery B via a conductive line BU. The upper arm HA and the lower arm LA are connected in series. An output terminal that connects the legs R and the motor M is connected between the upper arm HA and the lower arm LA.

[0016] As shown in Fig. 1, the power conversion device 1 of this embodiment includes power devices 20 (semiconductor substrates) corresponding to each leg R. That is, in this embodiment, the power conversion device 1 includes three power devices 20. Each power device 20 includes a power transistor corresponding to the upper arm HA and a power transistor corresponding to the lower arm. That is, in this embodiment, each power device 20 includes two power transistors. Each of these power transistors is formed using a plurality of semiconductor elements.

[0017] 2 is an exploded perspective view showing a schematic structural configuration of the power conversion device 1 of the present embodiment. As shown in FIG. 2, the power conversion device 1 of the present embodiment includes an inverter case 2, an intelligent power module 3, and a capacitor unit 4. The power conversion device 1 may also include other components such as a reactor unit forming a step-up / step-down circuit and a DC-DC converter unit forming a DC-DC converter. When a plurality of inverter circuits E are provided, the power conversion device 1 may also include a plurality of intelligent power modules 3. The power conversion device 1 may also include a step-up / step-down circuit unit in addition to the intelligent power module 3.

[0018] The inverter case 2 is a case that houses the intelligent power module 3, the capacitor unit 4, etc., and includes a center plate 2a and a case cover 2b. The center plate 2a and the case cover 2b are formed separately so as to be detachable. Note that in FIG. 2, the case cover 2b is illustrated in a state in which it is separated upward from the center plate 2a. However, the installation posture of the power conversion device 1 is not particularly limited. In other words, the power conversion device 1 may be mounted on the vehicle so that the case cover 2b is located to the side of the center plate 2a.

[0019] The central plate 2a has a bottom wall to which the intelligent power module 3 and the capacitor unit 4 are fixed, and a side wall that surrounds the intelligent power module 3 and the capacitor unit 4. In other words, the central plate 2a is formed in a container shape that opens on the case cover 2b side. Such a central plate 2a is provided with a water channel as necessary, and is formed to be able to guide the coolant that cools the intelligent power module 3 and the capacitor unit 4.

[0020] The case cover 2b is fixed to the central plate 2a and covers the intelligent power module 3 and the capacitor unit 4. That is, the intelligent power module 3 and the capacitor unit 4 are exposed when the case cover 2b is detached from the central plate 2a.

[0021] Such an inverter case 2 is fixed to, for example, a housing (not shown) that covers the motor M or a gear case that houses a gear that transmits the power generated by the motor M to the outside. In such a case, for example, the center plate 2a is fastened to the motor housing or the gear case using a bolt (not shown) or the like. Note that, if the housing that covers the motor M has a space for accommodating the power conversion device 1, the case cover 2b may be omitted.

[0022] The inverter case 2 also holds a conductive line BU (see Figure 1) that connects the battery B to the intelligent power module 3 and the capacitor unit 4, and bus bars that form part or all of the conductive line BU (see Figure 1) that connects the intelligent power module 3 to the motor M.

[0023] The intelligent power module 3 includes a power module 3a (semiconductor device) and a board unit 3b (control board). The power module 3a is a module provided with a plurality of power devices 20 (described later). In other words, the power module 3a forms an inverter circuit E by the plurality of power devices 20.

[0024] The board unit 3b is arranged by being stacked on the power module 3a. The board unit 3b includes, for example, a gate driver board and an ECU (Electronic Control Unit) board. The gate driver board is a board provided with a gate driver that generates a drive signal for the inverter circuit E formed by the power module 3a. The ECU board is a board provided with an ECU that controls the gate driver board. Such a board unit 3b controls the power device 20.

[0025] The capacitor unit 4 is a unit in which a capacitor element is housed. Such a capacitor unit 4 is connected to the power module 3a. Such a capacitor unit 4 forms the capacitor C shown in FIG.

[0026] 3 is a schematic exploded perspective view of a power module 3a included in the intelligent power module 3. As shown in this figure, the power module 3a includes a module case 10 (case), the above-mentioned power device 20 (semiconductor substrate), a heat sink 30 (heat dissipator), and a lead frame 40.

[0027] The module case 10 is fixed to the heat sink 30 and is a case that houses the power devices 20 and the like. The module case 10 has an opening 11 for each power device 20 to house the power device 20.

[0028] Fig. 4 is a schematic cross-sectional view of the power module 3a in which one power device 20 is enlarged, and is a cross-sectional view taken along line AA in Fig. 3. As shown in Fig. 4, the module case 10 is fixed onto the heat sink 30 via an adhesive material 50. Such a module case 10 is fixed to the surface 30a of the heat sink 30 so as to surround each of the power devices 20.

[0029] Moreover, the power conversion device 1 of the present embodiment includes a bus bar 60 molded in the module case 10. In the present embodiment, the power conversion device 1 of the present embodiment includes a bus bar 60 (hereinafter referred to as a bus bar 61) that conducts electric power between the battery B and the power device 20, and a bus bar 60 (hereinafter referred to as a bus bar 62) that conducts electric power between the power device 20 and the motor M.

[0030] The bus bar 61 is molded into the module case 10 with a connection terminal 61a on the battery B side and a portion where the lead frame 40 is joined exposed from the module case 10. The connection terminal 61a is connected to the capacitor unit 4 and a power supply terminal (not shown), and is connected to the battery B via the power supply terminal.

[0031] The bus bar 62 is molded in the module case 10 with a connection terminal 62a on the motor M side and a portion where the lead frame 40 is joined being exposed from the module case 10. The connection terminal 62a is connected to the motor M.

[0032] As shown in FIG. 4, the power conversion device 1 of the present embodiment includes a control terminal 70 molded in the module case 10. As shown in FIG. 4, the control terminal 70 is molded in the module case 10 in an L-shaped bent state. One end of the control terminal 70 protrudes upward from the module case 10. One end of the control terminal 70 is inserted into a through hole provided in the board unit 3b and is electrically connected to the board unit 3b. The other end of the control terminal 70 is arranged so as to be exposed upward at the opening 11. A plurality of such control terminals 70 are contained in the module case 10. Each control terminal 70 protrudes in the same direction as a protruding portion 12b of the case body 12 described later.

[0033] As shown in FIG. 4, the module case 10 includes a resin case body 12 and a heat conduction rod 13 (heat conduction member). The case body 12 is made of heat-resistant resin and includes a bus bar 60 and a control terminal 70. As shown in FIG. 4, the case body 12 has a protrusion 12b protruding upward (the opposite side to the heat sink 30) from a main body 12a of the case body 12. The protrusion 12b is a pin-shaped protrusion for positioning the board unit 3b with respect to the module case 10. For example, a plurality of protrusions 12b may be provided on the case body 12. For example, as shown in FIG. 3, in this embodiment, the protrusions 12b are provided on each of the four corners of the rectangular case body 12. The number of protrusions 12b is not limited to four. The number of protrusions 12b may be two, three, or even five or more. It is also possible to provide a single protrusion 12b.

[0034] Such protrusion 12b is inserted into a positioning hole 3b1 provided in the board unit 3b, whereby the board unit 3b is positioned with respect to the module case 10. That is, in this embodiment, the protrusion 12b penetrates the board unit 3b.

[0035] As shown in FIG. 4, the amount of protrusion of the protrusion 12b from the main body 12a is greater than the amount of protrusion of the control terminal 70 from the portion of the main body 12a where the protrusion 12b is provided. That is, the tip of the protrusion 12b is located farther from the heat sink 30 than the tip of the control terminal 70. When the board unit 3b is attached to such a module case 10, the tip of the protrusion 12b reaches the board unit 3b before the tip of the control terminal 70. Therefore, the board unit 3b can be positioned relative to the module case 10, and then the control terminal 70 can be connected to the board unit 3b. The tip of the protrusion 12b is tapered toward the tip so that the protrusion 12b can be easily inserted into the positioning hole 3b1 of the board unit 3b.

[0036] The heat conduction rod 13 is contained in the case body 12 so that one end is located inside the protrusion 12b and the other end is located closer to the heat sink 30 than the protrusion 12b. The heat conduction rod 13 has a higher thermoelectric efficiency than the case body 12 and is made of, for example, a metal. Such a heat conduction rod 13 transfers the heat received by the protrusion 12b toward the heat sink 30, suppressing a temperature rise in the protrusion 12b. In this embodiment, a heat conduction rod 13 is provided for each of the four protrusions 12b.

[0037] As shown in FIG. 4, in this embodiment, the module case 10 contains a bus bar 60 (conductive member) electrically connected to the power device 20. A part of the bus bar 60 is located between the heat conductive rod 13 and the heat sink 30. The bus bar 60 is a conductive member, and therefore has a higher thermal conductivity than the case body 12 of the module case 10. Since a part of the bus bar 60 is located between the heat conductive rod 13 and the heat sink 30, heat is easily transferred in the order of the heat conductive rod 13, the bus bar 60, and the heat sink 30 in the reflow process. This makes it easier to transfer the heat received by the protrusion 12b toward the heat sink 30.

[0038] 4, each power device 20 includes a mounting substrate 21 and a semiconductor element 22. The mounting substrate 21 is a substrate on which the semiconductor element 22 is mounted. The mounting substrate 21 includes a sheet-like insulating substrate 23, a front conductor layer 24 provided on a front surface (one surface) of the insulating substrate 23, and a rear conductor layer 25 provided on a rear surface of the insulating substrate 23.

[0039] The insulating substrate 23 is made of an insulating material such as ceramics and is formed in a sheet shape. A front conductor layer 24 is formed on the front surface (the surface on the semiconductor element 22 side) of the insulating substrate 23. This front conductor layer 24 is a metal layer that is electrically connected to the semiconductor element 22 and forms a part of the conductive circuit. In other words, the front conductor layer 24 is a conductor layer on which the semiconductor element 22 is mounted.

[0040] A back-side conductor layer 25 is formed on the other surface (the surface opposite to the semiconductor element 22) of the insulating substrate 23. This back-side conductor layer 25 forms a part of a heat transfer path that transfers heat transferred from the semiconductor element 22, etc. to the heat sink 30. The surface of this back-side conductor layer 25 opposite to the insulating substrate 23 is a mounting surface when mounting the power device 20 to the heat sink 30. This mounting surface is joined to the heat sink 30 via solder 100. In this embodiment, the mounting board 21 includes the back-side conductor layer 25. However, the mounting board 21 does not need to include the back-side conductor layer 25. In this case, the insulating substrate 23 is joined to the heat sink 30.

[0041] For example, the semiconductor element 22 is mounted on the front conductor layer 24. The number of the semiconductor elements 22 mounted on the front conductor layer 24 is not limited. Such a semiconductor element 22 can be formed using a silicon (Si) semiconductor. The semiconductor element 22 can also be formed using a wide gap semiconductor such as a silicon carbide (SiC) semiconductor or a gallium nitride (GaN) semiconductor.

[0042] Each power device 20 is accommodated in the opening 11 of the module case 10 while being placed on a heat sink 30. The heat sink 30 supports the module case 10 and the power device 20. The heat sink 30 also absorbs heat from the power device 20 and cools the power device 20. The heat sink 30 is fixed to the central plate 2a such that the lower surface thereof is exposed to a flow path provided in the central plate 2a, for example. The heat sink 30 may include a plurality of fins formed on the lower surface.

[0043] The lead frame 40 is joined to the power device 20 and the bus bar 60. The lead frame 40 is joined to the semiconductor element 22 of the power device 20 via solder 100. The lead frame 40 is also joined to the bus bar 60 via solder 100.

[0044] 5 is a flowchart showing a part of the manufacturing process of the power module 3a of this embodiment. As shown in this figure, the manufacturing process of the power module 3a of this embodiment includes a mounting board arrangement process S1, a case arrangement process S2, a semiconductor element arrangement process S3, a lead frame arrangement process S4, a reflow process S5, and a wire bonding process S6, which are performed in this order.

[0045] The mounting board arrangement step S1 is a step of arranging the mounting board 21 on the surface 30a of the heat sink 30 via sheet solder. Note that the sheet solder may be melted before the case arrangement step S2 to previously join the mounting board 21 to the heat sink 30.

[0046] The case arrangement step S2 is a step of arranging the module case 10 surrounding the mounting board 21 relative to the heat sink 30. In the case arrangement step S2, the module case 10 is bonded to the heat sink 30 via an adhesive 50.

[0047] The semiconductor element placement step S3 is a step of placing the semiconductor element 22 on the mounting board 21. In the semiconductor element placement step S3, a sheet solder is placed on the mounting board 21. Furthermore, in the semiconductor element placement step S3, the semiconductor element 22 is placed on the mounting board 21 via the sheet solder.

[0048] The lead frame arrangement step S4 is a step of arranging the lead frame 40. Here, the lead frame 40 is arranged so as to be in contact with the semiconductor element 22, the bus bar 60, etc. via a solder sheet, a solder bar, or the like.

[0049] The reflow process S5 is a process of melting the sheet solder or the like by heating and then hardening it to bond the mounting board 21, the semiconductor element 22, the heat sink 30, and the lead frame 40 to each other. The wire bonding process S6 is a process of connecting the control terminal 70 and the semiconductor element 22 via the bonding wire 80.

[0050] Thereafter, the power module 3a of the present embodiment is manufactured by performing necessary operations such as forming the sealing material 90. Furthermore, the power conversion device 1 is manufactured using such a power module 3a.

[0051] The power module 3a of the present embodiment as described above includes a heat sink 30, a power device 20, and a module case 10. The power device 20 is mounted on the heat sink 30. The module case 10 has a board unit 3b for controlling the power device 20 stacked thereon and fixed to the heat sink 30. The module case 10 also includes a case body 12 and a heat conduction rod 13. The case body 12 has a protrusion 12b for positioning the board unit 3b, and is made of resin. The heat conduction rod 13 is contained in the case body 12 so that a portion of the heat conduction rod 13 is located inside the protrusion 12b. The heat conduction rod 13 has a higher thermal conductivity than the case body 12.

[0052] According to the power module 3a of this embodiment, the heat conductive rod 13 having a higher thermal conductivity than the resin case body 12 is located inside the protruding portion 12b provided on the case body 12. Therefore, the heat received by the protruding portion 12b in the reflow process S5 is transferred from the protruding portion 12b to other parts via the heat conductive rod 13. Therefore, it is possible to suppress the temperature rise of the protruding portion 12b in the reflow process S5 and to suppress the thermal deformation of the protruding portion 12b. Therefore, the power module 3a of this embodiment can suppress the thermal deformation of the protruding portion 12b in the reflow process S5 in a semiconductor device having the protruding portion 12b that positions the stacked board unit 3b.

[0053] In the power module 3a of this embodiment, the protruding portion 12b is formed so as to protrude toward the opposite side to the heat sink 30. The heat conduction rod 13 is formed in a rod shape with one end located inside the protruding portion 12b and the other end located closer to the heat sink 30 than the protruding portion 12b.

[0054] According to the power module 3a of this embodiment, the heat of the protruding portion 12b can be transferred to the heat sink 30 via the rod-shaped heat conduction rod 13. Therefore, the shape of the heat conduction rod 13 can be simplified while the heat of the protruding portion 12b is reliably transferred to the heat sink 30.

[0055] In the power module 3a of this embodiment, the module case 10 contains a bus bar 60 electrically connected to the power device 20. A part of the bus bar 60 is located between the heat conduction rod 13 and the heat sink 30.

[0056] According to the power module 3a of this embodiment, in the reflow process S5, heat is easily transferred in the order of the thermal conduction rod 13, the bus bar 60, and the heat sink 30. Therefore, the heat received by the protrusion 12b is more easily transferred to the heat sink 30, and thermal deformation of the protrusion 12b can be more reliably suppressed.

[0057] Furthermore, in the power module 3a of this embodiment, the module case 10 houses a control terminal 70 that protrudes in the same direction as the protruding portion 12b and is electrically connected to the board unit 3b.

[0058] According to the power module 3a of this embodiment, the control terminal 70 can be accurately connected to the board unit 3b by positioning the board unit 3b with the protruding portion 12b.

[0059] Furthermore, in the power module 3a of this embodiment, the tip of the protrusion 12b is located farther from the heat sink 30 than the tip of the control terminal 70. According to the power module 3a of this embodiment, when the board unit 3b is attached, the tip of the protrusion 12b reaches the board unit 3b before the tip of the control terminal 70. Therefore, the board unit 3b can be positioned with respect to the module case 10, and then the control terminal 70 can be connected to the board unit 3b. Therefore, according to the power module 3a of this embodiment, the control terminal 70 can be more reliably connected to the board unit 3b.

[0060] The power converter 1 of the present embodiment includes a power module 3a and performs power conversion using the power module 3a. The power converter 1 of the present embodiment can suppress an increase in temperature of the protruding portion 12b in the reflow process S5, and suppress thermal deformation of the protruding portion 12b.

[0061] Second embodiment Next, a second embodiment of the present invention will be described with reference to Fig. 6. In the description of this embodiment, the description of the same parts as those in the first embodiment will be omitted or simplified.

[0062] 6 is a schematic cross-sectional view of the power module 3a in this embodiment, in which one power device 20 is enlarged. As shown in this figure, in the power module 3a of this embodiment, the lower end of the heat conduction rod 13 is in contact with the heat sink 30.

[0063] According to the power module 3a of this embodiment, heat can be directly transferred from the heat conductive rod 13 to the heat sink 30. Therefore, compared to a case where the case body 12 is present between the heat conductive rod 13 and the heat sink 30, the heat of the heat conductive rod 13 can be transferred to the heat sink 30 in a shorter time. Therefore, according to the power module 3a of this embodiment, the temperature rise of the protruding portion 12b in the reflow process S5 can be further suppressed, and the thermal deformation of the protruding portion 12b can be further suppressed.

[0064] Although the preferred embodiment of the present invention has been described above with reference to the attached drawings, it goes without saying that the present invention is not limited to the above embodiment. The shapes and combinations of the components shown in the above embodiment are merely examples, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present invention.

[0065] For example, in the above embodiment, the heat conducting member is a rod-shaped heat conducting rod 13. However, the present invention is not limited to this. The shape of the heat conducting member may be, for example, a plate shape or a strip shape.

[0066] The above embodiment can also be described as, for example, the following supplementary notes.

[0067] (Appendix 1) A heat sink; A semiconductor substrate mounted on the heat sink; a case in which a control board for controlling the semiconductor substrate is laminated and which is fixed to the heat sink; Equipped with The case is a resin case body having a protrusion for positioning the control board; a heat conductive member that is contained in the case body so that at least a portion of the heat conductive member is located inside the protruding portion and has a higher thermal conductivity than the case body; Equipped A semiconductor device comprising:

[0068] (Appendix 2) The protrusion is formed to protrude toward an opposite side to the heat sink, The heat conducting member is formed in a rod shape with one end located inside the protruding portion and the other end located closer to the radiator than the protruding portion. 2. The semiconductor device according to claim 1 .

[0069] (Appendix 3) the case includes a conductive member electrically connected to the semiconductor substrate; A portion of the conductive member is located between the heat conductive member and the heat sink. 3. The semiconductor device according to claim 1 or 2.

[0070] (Appendix 4) 4. The semiconductor device according to claim 1, wherein the case includes a control terminal that protrudes in the same direction as the protrusion and is electrically connected to the control board.

[0071] (Appendix 5) 5. The semiconductor device according to claim 4, wherein a tip of the protrusion is located farther from the heat sink than a tip of the control terminal.

[0072] (Appendix 6) 6. The semiconductor device according to claim 1, wherein the heat conductive member is in contact with the heat sink.

[0073] (Appendix 7) A semiconductor device according to any one of claims 1 to 6, The semiconductor device is used to perform power conversion. A power conversion device comprising: [Explanation of symbols]

[0074] 1...power conversion device, 2...inverter case, 3...intelligent power module, 3a...power module (semiconductor device), 3b...substrate unit (control board), 10...module case (case), 12...case body, 12a...main body, 12b...protruding portion, 13...thermal conductive rod (thermal conductive member), 20...power device (semiconductor substrate), 30...heat sink (heat sink), 40...lead frame, 50...adhesive, 60...bus bar (conductive member), 70...control terminal

Claims

1. A heat sink; A semiconductor substrate mounted on the heat sink; a case in which a control board for controlling the semiconductor substrate is laminated and which is fixed to the heat sink; Equipped with The case is a resin case body having a protrusion for positioning the control board; a heat conductive member that is contained in the case body so that at least a portion of the heat conductive member is located inside the protruding portion and has a higher thermal conductivity than the case body; have A semiconductor device comprising:

2. The protrusion is formed to protrude toward an opposite side to the heat sink, The heat conducting member is formed in a rod shape with one end located inside the protruding portion and the other end located closer to the radiator than the protruding portion.

2. The semiconductor device according to claim 1.

3. the case includes a conductive member electrically connected to the semiconductor substrate; A portion of the conductive member is located between the heat conductive member and the heat sink.

3. The semiconductor device according to claim 1, wherein the first and second electrodes are electrically connected to each other.

4. 3. The semiconductor device according to claim 1, wherein the case includes a control terminal that protrudes in the same direction as the protruding portion and is electrically connected to the control board.

5. 5. The semiconductor device according to claim 4, wherein a tip of the protrusion is located farther from the heat sink than a tip of the control terminal.

6. 3. The semiconductor device according to claim 1, wherein the heat conductive member is in contact with the heat sink.

7. A semiconductor device according to claim 1 or 2, The semiconductor device is used to perform power conversion. A power conversion device comprising:

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