Current detector

Abstract

To provide a configuration for accurately detecting a current when a shunt resistor is held and connected by plate-shaped wiring such as a bus bar or a lead frame.SOLUTION: A current detector comprises: a laminate structure resistor which has plate-shaped first and second electrodes and a plate-shaped resistor arranged between the first and second electrodes; and plate-shaped first and second conductors in which a measurement object current flows and which are connected to the resistor. The first conductor is connected to the first electrode, and the second conductor is connected to the second electrode. The resistor is laminated between the first conductor and the second conductor. On one surface of the first conductor, the first insulation layer and a first voltage detection pattern for transmitting a voltage signal and being arranged through the first insulation layer are provided.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a current detection device. [Background technology]

[0002] In recent years, as the current used in electronic devices has become larger, modules known as power modules, which convert and control power by switching power semiconductors, have been actively developed. Power modules often use highly heat-dissipating substrates that can handle large currents, such as ceramic substrates called DBC substrates, which are formed by directly bonding copper to an alumina substrate. In addition, power semiconductors, shunt resistors, and other components may be directly mounted on plate-shaped wiring (bus bars or lead frames) made of copper plates or other materials. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2001-358283 A [Patent Document 2] Patent Publication No. 2022-066642 Summary of the Invention [Problem to be solved by the invention]

[0004] The current detection shunt resistor described in Patent Document 1 aims to improve heat dissipation and reliability and to shorten the wiring length, but is not suitable for passing large currents because it requires bonding and connecting multiple wires.

[0005] Therefore, in order to pass a large current through such a vertically structured shunt resistor, a surface mounting method using an L-shaped electrode member has been devised as described in Patent Document 2. Patent Document 2 describes a method of drawing out a voltage signal by wire bonding in such a configuration.

[0006] On the other hand, in order to detect even larger currents, a case has been considered in which a vertical shunt resistor is sandwiched between plate-shaped wiring such as a bus bar or a lead frame, etc. In that case, the method of extracting the voltage signal for accurate current detection and the method of connection to the control circuit board become issues.

[0007] The present invention has been made to solve such problems, and aims to provide a configuration for detecting current with greater accuracy when a shunt resistor is connected by being sandwiched between plate-shaped wiring such as a bus bar or a lead frame. [Means for solving the problem]

[0008] An example of a current detection device according to the present invention is a resistor having a laminated structure, the resistor having a plate-like first electrode and a plate-like second electrode, and a plate-like resistive body disposed between the first electrode and the second electrode; a first conductor and a second conductor in the shape of a plate through which a current to be measured flows and which are connected to the resistor; Equipped with The first conductor is connected to the first electrode, The second conductor is connected to the second electrode, the resistor is disposed in a stack between the first conductor and the second conductor; A first insulating layer and a first voltage detection pattern for transmitting a voltage signal are provided on one surface of the first conductor. The first insulating layer is disposed through the first voltage detection pattern.

[0009] In one example, one end of the first voltage detection pattern and the first conductor are connected.

[0010] In one example, one end of the first voltage detection pattern is connected to the first electrode.

[0011] In one example, the first conductor further comprises a second voltage sensing pattern for transmitting a voltage signal disposed through the first insulating layer.

[0012] In one example, The current detection device further includes a plate-shaped voltage terminal for detecting a voltage, The voltage terminal has a flat portion and a terminal connection portion formed by extending a part of a side surface, the flat portion of the voltage terminal is laminated and connected between the second electrode and the second conductor; The terminal connection portion is connected to one end of the second voltage detection pattern.

[0013] In one example, The first insulating layer is flexible. the first insulating layer has an extension portion that extends while bending, one end of the second voltage detection pattern is disposed on the extension portion of the first insulating layer, The one end of the second voltage detection pattern is connected to a second conductor.

[0014] In one example, a through hole is provided in the first conductor in a region overlapping with the first electrode when viewed from a stacking direction; a conductor connection portion is provided in the first conductor between the through hole and an end portion of the first conductor; One end of the first voltage detection pattern is connected to the conductor connection portion of the first conductor.

[0015] In one example, a through hole is provided in the first conductor in a region overlapping with the first electrode when viewed from a stacking direction; the first electrode has an exposed portion exposed in the through hole, One end of the first voltage detection pattern is connected to the exposed portion of the first electrode.

[0016] In one example, the first conductor further comprises a second insulating layer; the first insulating layer and the first voltage detection pattern are covered with the second insulating layer except for a portion of the first voltage detection pattern; a via is formed in the first insulating layer and the second insulating layer, the first conductor extending through the via in a stacking direction; The first electrode and the first conductor are connected through the via. Effect of the Invention

[0017] The current detection device of the present invention has a simplified structure in which a vertically structured shunt resistor is sandwiched and connected to plate-shaped wiring such as a bus bar or a lead frame, and has a voltage signal extraction structure that enables highly accurate voltage detection, and can be easily connected to a control circuit board.

[0018] Furthermore, in the current detection device according to the present invention, the heat dissipation of the shunt resistor is improved, and excellent detection accuracy is achieved even in the case of a large current. [Brief description of the drawings]

[0019] [Figure 1] 1 is a perspective view showing a configuration example of a resistor 10 according to a first embodiment of the present invention. [Diagram 2] 1 is a side view showing a configuration example of a current detection device 100 according to a first embodiment. [Diagram 3] FIG. 2 is a perspective view of a DBC substrate 20 according to the first embodiment. [Figure 4] FIG. 11 is a side view showing a configuration example of a current detection device 100 according to a second embodiment. [Diagram 5] FIG. 11 is a perspective view showing a configuration example of a current detection device 100 according to a second embodiment. [Figure 6] FIG. 11 is a bottom view of the bus bar 23 according to the second embodiment. [Figure 7] FIG. 11 is a perspective view of a Cu clip 60 according to a second embodiment. [Figure 8] FIG. 11 is a side view showing a configuration example of a current detection device 100 according to a third embodiment. [Figure 9] FIG. 11 is a perspective view showing a configuration example of a current detection device 100 according to a third embodiment. [Figure 10] FIG. 11 is a bottom view of the bus bar 23 according to the third embodiment. [Figure 11] FIG. 11 is a side view showing a configuration example of a current detection device 100 according to a fourth embodiment. [Figure 12] FIG. 11 is a perspective view showing a configuration example of a current detection device 100 according to a fourth embodiment. [Figure 13] FIG. 11 is a bottom view of the bus bar 23 according to the fourth embodiment. [Figure 14] FIG. 13 is a side view showing a configuration example of a current detection device 100 according to a fifth embodiment. [Figure 15] FIG. 13 is a bottom view showing a configuration example of a current detection device 100 according to a fifth embodiment. [Figure 16] FIG. 13 is a side view showing a configuration example of a current detection device 100 according to a sixth embodiment. [Figure 17] FIG. 13 is a perspective view of a Cu clip 60 according to a sixth embodiment. [Figure 18] FIG. 17 is a top view of a portion of FIG. 16 . [Figure 19] FIG. 13 is a side view showing a configuration example of a current detection device 100 according to a seventh embodiment. [Figure 20] FIG. 20 is a top view of a portion of FIG. 19 . [Figure 21] FIG. 13 is a side view showing a configuration example of a current detection device 100 according to a modified example of the seventh embodiment. [Figure 22] FIG. 22 is a top view of a portion of FIG. [Figure 23] FIG. 13 is a side view showing a configuration example of a current detection device 100 according to an eighth embodiment. [Figure 24] FIG. 24 is a top view of a portion of FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0020] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. [Example 1] 1 is a perspective view showing a configuration example of a resistor 10 according to a first embodiment of the present invention.

[0021] The resistor 10 is a laminated resistor having a plate-like first electrode 12 and a plate-like second electrode 13, and a plate-like resistive body 11 disposed between the first electrode 12 and the second electrode 13. The resistor 10 is, for example, a resistor for current detection or a shunt resistor. In particular, the resistor 10 can be said to be a shunt resistor with a vertical structure. In the example of FIG. 1, the resistive body 11 is formed in a square or rectangular shape, but the shape can be designed arbitrarily.

[0022] The material of the first electrode 12 and the second electrode 13 is a highly conductive metal material such as Cu. The material of the resistor 11 is a metal material suitable for current detection such as Cu-Ni, Cu-Mn, Ni-Cr, or a composite material containing a metal. The dimensions of the resistor 10 are, for example, 5 mm x 5 mm x 0.5 mm thick. The thicknesses of the first electrode 12 and the second electrode 13 are, for example, 0.1 mm each. The thickness of the resistor 11 is, for example, 0.3 mm.

[0023] FIG. 1 shows an example of resistor 10, but other configurations are possible, for example a current sensing resistor disclosed in JP 2018-170478 A may be used.

[0024] Fig. 2 is a side view showing a configuration example of the current detection device 100. The current detection device 100 includes a resistor 10, a DBC substrate 20 (DBC: Direct Bonded Copper), and a bus bar 22 (second conductor). In Fig. 2, only the DBC substrate 20 is shown in cross section. Fig. 3 is a perspective view of the DBC substrate 20.

[0025] The DBC substrate 20 includes a copper plate 21 (first conductor). The copper plate 21 is a plate-shaped conductor, and a current to be measured flows through the copper plate 21. The copper plate 21 is connected to the resistor 10 (particularly the first electrode 12). The thickness of the copper plate 21 is within a range of 0.3 mm to 2.0 mm at its thinnest portion (for example, a portion other than vias 33 described later in FIG. 2).

[0026] Bus bar 22 is also a plate-shaped conductor, and a current to be measured flows through bus bar 22. Bus bar 22 is connected to resistor 10 (particularly second electrode 13). Resistor 10 is arranged in a laminated state between copper plate 21 and bus bar 22. The thickness of bus bar 22 is, for example, 0.3 mm or more, and specifically, 0.5 mm.

[0027] In the DBC substrate 20, a first insulating layer 31, a second insulating layer 32, and a first voltage detection pattern 41 are provided on one surface of a copper plate 21. The first insulating layer 31 is made of, for example, silicon nitride, aluminum nitride, alumina, zirconia, or the like. The thickness of the first insulating layer 31 is, for example, within a range of 0.1 mm to 1 mm, specifically, 0.3 mm. The second insulating layer 32 is made of, for example, solder resist. The thickness of the second insulating layer 32 is, for example, within a range of 10 μm to 50 μm. The first voltage detection pattern 41 is a pattern for transmitting a voltage signal, and is disposed on the copper plate 21 via the first insulating layer 31. The first voltage detection pattern 41 is made of, for example, Cu foil, and has a thickness of, for example, 35 μm.

[0028] Vias 33 through which the copper plate 21 extends are formed in the first insulating layer 31 and the second insulating layer 32 in the stacking direction, and the copper plate 21 is exposed from the first insulating layer 31 and the second insulating layer 32 at the lower exposed surface 21a. The lower exposed surface 21a is joined to the first electrode 12. In this manner, the copper plate 21 and the first electrode 12 are connected through the vias 33.

[0029] The first insulating layer 31 and the first voltage detection pattern 41 are covered with the second insulating layer 32 except for a portion of the first voltage detection pattern 41. In the example of Figures 2 and 3, the first voltage detection pattern 41 is exposed at the electrode connection portion 41a and the voltage extraction portion 41b, and the remaining portion is covered with the second insulating layer 32. One end of the first voltage detection pattern 41, i.e., the electrode connection portion 41a, is connected to the upper surface of the first electrode 12.

[0030] In this specification, "one end" means, in one example, a portion including a longitudinal end, and for example, in Fig. 2, electrode connection portion 41a is formed including the longitudinal end of first voltage detection pattern 41. However, in a modified example, strictly speaking, it may not include the longitudinal end, and may mean a region in the vicinity of the longitudinal end.

[0031] The voltage extracting portion 41b may be configured so as not to be exposed from the second insulating layer 32 (for example, it may be exposed at the opposite end of the DBC substrate 20 not shown in FIGS. 2 and 3).

[0032] The connection between the first electrode 12 and the copper plate 21, the connection between the first electrode 12 and the first voltage detection pattern 41, and the connection between the second electrode 13 and the bus bar 22 are realized by, for example, soldering, welding, low-temperature sintering, or the like.

[0033] With this configuration, current flows into resistor 10 via the thick copper pattern formed by copper plate 21 on the front surface of DBC substrate 20, and voltage can be extracted from the top surface of resistor 10 via first voltage detection pattern 41 on the back surface of DBC substrate 20.

[0034] 2, the connection relationship between the current detection device 100 and the control circuit 50 is shown typically. The control circuit 50 is connected to the current detection device 100 via, for example, wires 51 and 52. The wires 51 and 52 are, for example, wire bonding. In the example of FIG. 2, the wire 51 connects the voltage extracting portion 41b of the first voltage detection pattern 41 to the control circuit 50, and the wire 52 connects the bus bar 22 to the control circuit 50. With this configuration, a voltage signal between the upper and lower surfaces of the resistor 10 (i.e., between the first electrode 12 and the second electrode 13) can be supplied to the control circuit 50.

[0035] With this configuration, it is possible to detect the current with higher accuracy. For example, the portions where the wirings 51 and 52 are connected to the current detection device 100 are each structured to ensure a certain degree of surface area, so that appropriate connections for improving accuracy can be easily realized.

[0036] [Example 2] 4 and 5 show a configuration example of a current detection device 100 according to a second embodiment. Fig. 4 is a side view, and Fig. 5 is a perspective view seen from the bottom side. Hereinafter, the second embodiment will be described, but the description of parts common to the first embodiment may be omitted.

[0037] The current detection device 100 includes a bus bar 23 (first conductor) instead of the DBC substrate 20 of the first embodiment (FIG. 2), and a Cu frame 24 (second conductor) instead of the bus bar 22. The thickness of the Cu frame 24 is, for example, 0.1 mm or more, and specifically, 0.5 mm.

[0038] Fig. 6 shows a bottom view of busbar 23. As shown in Figs. 4 to 6, busbar 23 has a first insulating layer 31 on one surface. First insulating layer 31 is made of, for example, a highly heat-resistant material (polyimide, epoxy, etc.). The thickness of first insulating layer 31 is in the range of 20 µm to 100 µm, for example.

[0039] Busbar 23 includes a first voltage detection pattern 41 disposed on the same surface as first insulating layer 31, with first insulating layer 31 interposed therebetween. One end of first voltage detection pattern 41, i.e., busbar connection portion 41c, is connected to busbar 23.

[0040] Bus bar 23 further includes a second voltage detection pattern 42 disposed on the same surface as first insulating layer 31, with first insulating layer 31 interposed therebetween. Second voltage detection pattern 42 is a pattern for transmitting a voltage signal.

[0041] The current detection device 100 further includes a plate-shaped Cu clip 60 (voltage terminal) for detecting a voltage. Fig. 7 shows a perspective view of the Cu clip 60 as seen from the top side. The thickness of the Cu clip 60 is within a range of 0.1 mm to 0.3 mm, for example, and is specifically 0.1 mm.

[0042] The Cu clip 60 has a flat portion 60a and a terminal connection portion 60b formed by extending a portion of the side surface. The flat portion 60a is laminated and connected between the second electrode 13 of the resistor 10 and the Cu frame 24. The terminal connection portion 60b is connected to one end of the second voltage detection pattern 42, i.e., the terminal connection portion 42a.

[0043] According to this configuration, the first electrode 12 of the resistor 10 is connected to the first voltage detection pattern 41 via the bus bar 23, and the second electrode 13 is connected to the second voltage detection pattern 42 via the Cu clip 60. Although a control circuit is not particularly shown, a voltage is extracted via the first voltage detection pattern 41 and the second voltage detection pattern 42. In this manner, the voltage output of the resistor 10 can be supplied to the control circuit with high accuracy.

[0044] [Example 3] Example 3 is obtained by making the first insulating layer flexible in Example 2. Example 3 will be described below, but description of parts common to Example 1 or 2 may be omitted.

[0045] Fig. 8 and Fig. 9 show a configuration example of a current detection device 100 according to a third embodiment. Fig. 8 is a side view (partially in cross section), and Fig. 9 is a perspective view seen from the bottom side. Fig. 10 shows a bottom view of the bus bar 23.

[0046] The current detection device 100 includes an insulating flexible substrate 34 instead of the first insulating layer 31 of the second embodiment (FIGS. 4 to 6). The thickness of the flexible substrate 34 is within a range of 20 μm to 80 μm, for example. If the thickness is less than 20 μm, the material is too soft, making the flexible substrate 34 difficult to handle, and if the thickness is 100 μm or more, the flexible substrate 34 is too hard and does not provide flexibility.

[0047] 8, vias 34a are formed in flexible substrate 34. One end of first voltage detection pattern 41 is exposed on the back surface of flexible substrate 34 (i.e., the surface opposite to the surface on which first voltage detection pattern 41 is provided) to form bus bar connection portion 41c. Bus bar connection portion 41c is connected to bus bar 23 through vias 34a. This connection is realized by, for example, soldering, welding, low-temperature sintering, or the like.

[0048] Even with this configuration, it is possible to extract a voltage via the first voltage detection pattern 41 and the second voltage detection pattern 42.

[0049] [Example 4] In the fourth embodiment, in the third embodiment, wire bonding is used for connection of the first voltage detection pattern 41. Hereinafter, the fourth embodiment will be described, but the description of the parts common to any of the first to third embodiments may be omitted.

[0050] 11 and 12 show a configuration example of a current detection device 100 according to a fourth embodiment. Fig. 11 is a side view, and Fig. 12 is a perspective view seen from the bottom side. Fig. 13 shows a bottom view of the bus bar 23.

[0051] One end of the first voltage detection pattern 41, i.e., wire connection portion 41d, and the bus bar 23 are connected by a bonding wire 53. The material of the bonding wire 53 is, for example, Au, Ag, Cu, Al, or the like.

[0052] [Example 5] In Example 5, the Cu clip 60 in Example 3 is omitted, and an extension portion is provided on the flexible substrate 34. Example 5 will be described below, but descriptions of parts common to any of Examples 1 to 4 may be omitted.

[0053] 14 and 15 show a configuration example of a current detection device 100 according to a fifth embodiment. Fig. 14 is a side view (partially in cross section), and Fig. 15 is a bottom view.

[0054] As described above, the flexible substrate 34 has flexibility, and includes the extending portion 34b that extends while bending. In this embodiment, the extending portion 34b extends in a direction from the bus bar 23 toward the Cu frame 24 at an end portion of the flexible substrate 34 (for example, an end portion in the longitudinal direction of the second voltage detection pattern 42). One end of the second voltage detection pattern 42, i.e., the Cu frame connection portion 42b, is disposed on the extending portion 34b. The Cu frame connection portion 42b is connected to the Cu frame 24.

[0055] In this way, by extending a portion of the flexible substrate 34 to a long extent, the Cu clip 60 can be omitted and the flexible substrate 34 can be directly connected to the Cu frame 24 (which may be a bus bar).

[0056] [Example 6] In Example 6, the surface of bus bar 23 on which flexible substrate 34 is arranged is opposite to that of Example 3. Example 6 will be described below, but descriptions of parts common to any of Examples 1 to 5 may be omitted.

[0057] Fig. 16 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to Example 6. Fig. 17 shows a perspective view of a Cu clip 60 as viewed from the bottom side. Fig. 18 shows a top view of a portion of Fig. 16.

[0058] In the third embodiment (FIG. 8 etc.), the flexible substrate 34 is arranged on the surface of the busbar 23 facing the resistor 10, but in the present embodiment, the flexible substrate 34 is arranged on the surface of the busbar 23 opposite the resistor 10. Similarly, the first voltage detection pattern 41 and the second voltage detection pattern 42 are arranged on the surface of the busbar 23 opposite the resistor 10.

[0059] The busbar 23 has a through hole 23a penetrating the busbar 23 in the stacking direction. The Cu clip 60 has an extension 60c (FIG. 17), which extends through the through hole 23a to the opposite side of the busbar 23 (i.e., the side of the surface on which the second voltage detection pattern 42 is arranged). In order to avoid a short circuit between the Cu clip 60 and the busbar 23, it is preferable that the extension of the extension 60c is parallel to the stacking direction (i.e., perpendicular to the flat portion 60a), and it is preferable that at least a portion of the extension 60c disposed within the through hole 23a is surrounded by an insulating portion 60d that is insulated. The insulating process is achieved by, for example, coating with epoxy resin or the like.

[0060] The Cu clip 60 is connected at the tip of the extension 60c, i.e., the terminal connection portion 60b, to the terminal connection portion 42a of the second voltage detection pattern 42 via the solder 70. According to this configuration, the first electrode 12 of the resistor 10 is connected to the first voltage detection pattern 41 via the bus bar 23 and the bus bar connection portion 41c (FIG. 18; similar to FIG. 8 of the third embodiment, etc.), and the second electrode 13 is connected to the second voltage detection pattern 42 via the Cu clip 60 and the solder 70.

[0061] According to this configuration, bus bar 23 can be attached to resistor 10, Cu frame 24, and Cu clip 60 from the same direction, making the assembly work more efficient.

[0062] [Example 7] In Example 7, in Example 6, a through hole is provided in bus bar 23, and wire bonding is used for connection. Example 7 will be described below, but a description of parts common to any of Examples 1 to 6 may be omitted.

[0063] Fig. 19 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to Example 7. Fig. 20 is a top view of a portion of Fig. 19 .

[0064] A through hole 23a is provided in the bus bar 23. The through hole 23a is provided in a region of the bus bar 23 that overlaps with the first electrode 12 when viewed from the stacking direction. The first electrode 12 has an exposed portion 12a that is exposed in the through hole 23a. The bus bar 23 and the resistor 10 (particularly the first electrode 12) may be connected to each other by joining using soldering, low-temperature sintering, or the like, but it is preferable to use joining using ultrasonic welding.

[0065] In bus bar 23, conductor connection portion 23b is provided between through hole 23a and an end portion of bus bar 23. One end of first voltage detection pattern 41, i.e., wire connection portion 41d, is connected to conductor connection portion 23b of bus bar 23 via wire bonding 54. That is, wire bonding 54 connects wire connection portion 41d and conductor connection portion 23b across the upper portion of through hole 23a.

[0066] At the end of bus bar 23, Cu clip 60 extends longer than bus bar 23, and extension portion 60c is disposed at a position on the longitudinal side beyond the end of bus bar 23 (FIG. 20 shows only extension portion 60c of Cu clip 60). Terminal connection portion 42a of second voltage detection pattern 42 and extension portion 60c are connected via wire bonding 55.

[0067] By controlling the positional relationship between the through-hole 23a formed in the bus bar 23, the resistor 10, and the bonding wire 54, it is possible to adjust the temperature coefficient of resistance (TCR) of the current detection device 100.

[0068] Fig. 21 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to a modified example of the seventh embodiment. Fig. 22 is a top view of a part of Fig. 21.

[0069] In place of the wire bonding 54 in the seventh embodiment, a wire bonding 56 is provided in this modification. The wire bonding 56 is connected to the exposed portion 12a of the first electrode 12, not to the bus bar 23. In this manner, one end of the first voltage detection pattern 41, i.e., the wire connection portion 41d, and the exposed portion 12a of the first electrode 12 are connected via the wire bonding 56.

[0070] By controlling the positional relationship between the through-hole 23a formed in the bus bar 23, the resistor 10, and the bonding wire 56, it is possible to adjust the temperature coefficient of resistance (TCR) of the current detection device 100.

[0071] [Example 8] In Example 8, similarly to Example 5 in Example 6 or 7, the Cu clip 60 is omitted and an extension portion 34b is provided on the flexible substrate 34. Example 8 will be described below, but descriptions of parts common to any of Examples 1 to 7 may be omitted.

[0072] Fig. 23 is a side view (partially in cross section) showing a configuration example of a current detection device 100 according to Example 8. Fig. 24 shows a top view of a portion of Fig. 23 .

[0073] In this embodiment, the extension portion 34b extends in a direction from the bus bar 23 toward the Cu frame 24 at an end portion of the flexible substrate 34 (for example, an end portion in the longitudinal direction of the second voltage detection pattern 42).

[0074] The extending portion 34b is provided with a via 34c formed in the lamination direction of the extending portion 34b. One end of the second voltage detection pattern 42, that is, the Cu frame connection portion 42b, is connected to the upper surface of the Cu frame 24 through the via 34c.

[0075] In this way, by extending a portion of the flexible substrate 34 to a long extent, the Cu clip 60 can be omitted and the flexible substrate 34 can be directly connected to the Cu frame 24 (which may be a bus bar). [Explanation of symbols]

[0076] 10...Resistor 11…Resistor 12...1st electrode 12a...Exposed part 13…Second electrode 20…DBC board 21...Copper plate 21a…Lower exposed surface 22,23…Busbar 23a...Through hole 23b…Conductor connection part 24…Cu frame 31…First insulating layer 32…Second insulating layer 33…Beer 34...Flexible substrate (first insulating layer) 34a…Via 34b...Extending part 34c...Beer 41…First voltage detection pattern 41a...electrode connection part 41b...Voltage extraction section 41c…Busbar connection 41d…Wire connection 42…Second voltage detection pattern 42a…Terminal connection part 42b…Cu frame connection part 50...Control circuit 51…Wiring 52…Wiring 53, 54, 55, 56…Wire bonding 60...Cu clip (voltage terminal) 60a...Flat area 60b...Terminal connection part 60c...extension part 60d…Insulated section 100...Current detection device

Claims

1. a resistor having a laminated structure, the resistor having a plate-like first electrode and a plate-like second electrode, and a plate-like resistive body disposed between the first electrode and the second electrode; a first conductor and a second conductor in the shape of a plate through which a current to be measured flows and which are connected to the resistor; Equipped with The first conductor is connected to the first electrode, The second conductor is connected to the second electrode, The resistor is disposed in a stack between the first conductor and the second conductor, A first insulating layer and a first voltage detection pattern for transmitting a voltage signal disposed through the first insulating layer are provided on one surface of the first conductor. Current detection device.

2. The current detection device according to claim 1 , wherein one end of the first voltage detection pattern is connected to the first conductor.

3. The current detection device according to claim 1 , wherein one end of the first voltage detection pattern is connected to the first electrode.

4. The current detection device according to claim 2 or 3, wherein the first conductor further comprises a second voltage detection pattern for transmitting a voltage signal disposed through the first insulating layer.

5. The current detection device further includes a plate-shaped voltage terminal for detecting a voltage, The voltage terminal has a flat portion and a terminal connection portion formed by extending a part of a side surface, the flat portion of the voltage terminal is laminated and connected between the second electrode and the second conductor; The terminal connection portion is connected to one end of the second voltage detection pattern. The current detection device according to claim 4.

6. The first insulating layer is flexible. the first insulating layer includes an extension portion that extends while bending; one end of the second voltage detection pattern is disposed on the extending portion of the first insulating layer, The one end of the second voltage detection pattern is connected to a second conductor. The current detection device according to claim 4.

7. a through hole is provided in the first conductor in a region overlapping with the first electrode when viewed from a stacking direction; a conductor connection portion is provided in the first conductor between the through hole and an end portion of the first conductor; one end of the first voltage detection pattern and the conductor connection portion of the first conductor are connected; The current detection device according to claim 2 .

8. a through hole is provided in the first conductor in a region overlapping with the first electrode when viewed from a stacking direction; the first electrode includes an exposed portion exposed in the through hole, One end of the first voltage detection pattern and the exposed portion of the first electrode are connected. The current detection device according to claim 3 .

9. the first conductor further comprises a second insulating layer; the first insulating layer and the first voltage detection pattern are covered with the second insulating layer except for a portion of the first voltage detection pattern; a via is formed in the first insulating layer and the second insulating layer, the first conductor extending through the via in a stacking direction; The first electrode and the first conductor are connected through the via. The current detection device according to claim 3 .

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