Semiconductor device
JP2025036546AActive Publication Date: 2025-03-14SEMICON ENERGY LAB CO LTD
Patent Information
- Application Number
- JP2024228492
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2009-11-06
- Filing Date
- 2024-12-25
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2030-11-04
AI Technical Summary
Benefits of technology
【0024】 本発明の一態様を実施することにより、同一基板上に高速動作が可能な駆動回路部と、画 素部とを有した半導体装置を作製することができる。
✦ Generated by Eureka AI based on patent content.
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Figure 2025036546000001_ABST
Abstract
To manufacture a semiconductor device which uses a thin film transistor having favorable electrical characteristics and high reliability as a switching element and has a pixel part and a drive circuit part capable of high-speed operation on the same substrate to achieve high display quality and high reliability.SOLUTION: In a semiconductor device, in a drive circuit part and a pixel part two types of thin film transistors each using an oxide semiconductor layer having a crystalline region on one surface as an active layer are formed, and by selecting a region where a channel is formed by arrangement of a gate electrode layer, electric characteristics of the thin film transistor is selected thereby to allow the semiconductor device having the pixel part and the drive circuit part capable of a high-speed operation on the same substrate to be manufactured.SELECTED DRAWING: Figure 1
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Citation Information
Patent Citations
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