Process kit with protective ceramic coatings for hydrogen and nh3 plasma applications

Abstract

To provide a method and apparatus for use of hydrogen plasma processing.SOLUTION: In a processing chamber assembly 100, a plasma processing chamber 101 includes a plurality of chamber components. The chamber components are coated with a yttrium zirconium oxide composition, such as a Y2O3-ZrO2 solid solution. Some of the chamber components are replaced with a bulk yttrium zirconium oxide ceramic. Yet other chamber components are replaced with similar components of different materials. A ceramic-coated chamber component is one of a chamber lid 108, an upper liner 109, a lower liner 107, a liner door 156, and an electrostatic chuck 105.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Embodiments of the present disclosure relate generally to ceramic coated components and substrate processing chambers including ceramic coated components. [Background technology]

[0002] In the semiconductor industry, devices are being manufactured at ever-decreasing sizes. Some manufacturing processes include plasma etching and plasma cleaning processes in which a substrate is exposed to a high velocity plasma stream to etch or clean the substrate. Hydrogen plasma processes are particularly useful, but are highly corrosive and can erode parts within the processing chamber. Corrosion of chamber parts creates particles that can contaminate the substrate being processed and contribute to device defects.

[0003] As device geometries shrink, susceptibility to defects increases and particulate contaminant requirements become more stringent. Thus, as device geometries shrink, tolerable particulate contamination levels may decrease. To minimize particulate contamination introduced by plasma etching and / or plasma cleaning processes, plasma-resistant chamber materials have been developed. Examples of such plasma-resistant materials include ceramics composed of Al2O3, AlN, SiC, Y2O3, quartz, and ZrO2. Different ceramics provide different material properties, such as plasma resistance, stiffness, bending strength, and thermal shock resistance. Additionally, different ceramics have different material costs.

[0004] The location and properties of different ceramic coatings or ceramic replacement parts have a large effect on particle deposition on the substrate. Therefore, there is a need to utilize a combination of ceramic coatings and ceramic parts that minimizes particle deposition on the substrate while maintaining the structural integrity of the chamber and reducing overall cost. Summary of the Invention

[0005] The present disclosure generally relates to an apparatus for substrate processing including a chamber body, a lower liner disposed within the chamber body, an upper liner disposed within the chamber body over the lower liner, a liner door disposed through the upper liner and the chamber body, a chamber lid disposed over the chamber body, and a gas nozzle disposed through the chamber lid, wherein each of the lower liner, upper liner, and liner door further includes a spray coated yttrium zirconium oxide layer disposed thereon, and the gas nozzle is a bulk ceramic gas nozzle.

[0006] Another embodiment of an apparatus for substrate processing includes a chamber body, a lower liner disposed within the chamber body, an upper liner disposed within the chamber body on the lower liner, a liner door disposed through the upper liner and the chamber body, a chamber lid disposed on the upper liner, a gas nozzle disposed through the chamber lid, and one or more nickel-plated or stainless steel gaskets disposed between the lower liner and the upper liner, between the upper liner and the chamber lid, and between the lower liner and the substrate support pedestal. The lower liner, the upper liner, and the liner door further include a spray-coated yttrium zirconium oxide layer disposed thereon, the yttrium zirconium oxide further including a Y2O3-ZrO2 solid solution. The gas nozzle is a bulk ceramic gas nozzle.

[0007] Yet another embodiment of an apparatus for substrate processing includes a chamber body, a lower liner disposed within the chamber body, an upper liner disposed within the chamber body on the lower liner, a liner door disposed through the upper liner and the chamber body, a chamber lid disposed on the upper liner, a gas nozzle disposed through the chamber lid, an induction coil disposed above the chamber lid, and a shielding electrode disposed between the induction coil and the chamber lid. Each of the lower liner, the upper liner, and the liner door further includes a spray-coated yttrium zirconium oxide layer disposed thereon. The gas nozzle is a bulk ceramic gas nozzle. The spray-coated yttrium zirconium oxide layer has a thickness of about 25 microns to about 300 microns, and the spray-coated yttrium zirconium oxide layer is a purified yttrium zirconium oxide coating with a concentration of Y2O3 and ZrO2 of 99% or more.

[0008] So that the above-recited features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above can be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings only illustrate exemplary embodiments and therefore should not be considered limiting of the scope, since the present disclosure may admit of other equally effective embodiments. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic cross-sectional view of a processing chamber assembly according to one embodiment. [Diagram 2] 1 is a schematic cross-sectional view of a ceramic coated chamber part. [Diagram 3] A method for processing a substrate. [Figure 4] 1 is a chart showing substrate particle contamination levels. [Diagram 5] 1 is a graph showing substrate particle contamination caused by a process chamber lid. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] For ease of understanding, the same reference numbers have been used, where possible, to designate identical elements common to each of the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0011] An embodiment of the disclosure provided herein includes a process chamber for substrate processing. The process chamber may be utilized during hydrogen plasma processing of a substrate. The process chamber includes a plurality of chamber parts. One or more of the plurality of chamber parts are coated with an yttrium zirconium oxide composition, such as a Y2O3-ZrO2 solid solution. Some of the plurality of chamber parts are replaced with a bulk yttrium zirconium oxide ceramic. Still other chamber parts are replaced with similar parts of a different material. The coating and part replacement are performed to reduce particle contamination of the substrate during substrate processing operations using hydrogen plasma.

[0012] FIG. 1 is a schematic cross-sectional view of a processing chamber assembly 100 according to one embodiment. As shown, the processing chamber assembly 100 includes a plasma processing chamber 101, a plasma source 160, a bias power system 161, and a controller 146. The plasma processing chamber 101 provides a chamber for processing a thin film formed on a surface of a substrate 128. Typically, the thin film is deposited on the surface of the substrate 128 in a separate thin film deposition chamber coupled to a shared cluster tool in the processing chamber assembly 100. In some embodiments, the plasma processing chamber 101 may also be configured to deposit a thin film layer on the surface of the substrate. The plasma source 160 converts the mixture 134 (such as a mixture containing hydrogen) into a plasma 136, which bombards the substrate 128 and modifies the properties of the film grown on the substrate. The bias power system 161 provides a voltage bias across the substrate 128 to facilitate the processing process. The controller 146 implements the specific process conditions for both the film growth and the film processing. The entire processing chamber assembly 100 is configured to grow or process a film formed on the substrate 128 using a particular plasma process provided through the use of commands given by the controller 146. The thin film treatment process is assisted by a plasma source 160 and a bias power system 161.

[0013] As shown, the plasma processing chamber 101 includes a chamber body 106, a chamber lid 108, a substrate support pedestal 104, an electrostatic chuck 105, an electrical ground 116, a gas panel 130, a gas nozzle 131 having an inlet 132, a throttle valve 138, a vacuum pump 140, and a gas source 142. The plasma processing chamber 101 can be any suitable plasma processing chamber, such as an inductively coupled plasma (ICP) processing chamber. In one embodiment, the processing chamber 101 and a thin film deposition chamber (not shown) are part of the same cluster tool (not shown). The cluster tool (e.g., a Centura® system from Applied Materials Inc.) is configured to allow the transfer of substrates between the thin film deposition chamber and the processing chamber 101 without exposure to air.

[0014] As shown in FIG. 1, the processing chamber 101 includes a chamber body 106, a dielectric chamber lid 108, and a substrate support pedestal 104 disposed within the chamber body 106. The chamber body 106 and the dielectric chamber lid 108 help isolate an interior volume of the processing chamber 101 from an external environment. Typically, the chamber body 106 is coupled to an electrical ground 116. The chamber body 106 may also be described as the chamber wall of the processing chamber 101. The chamber body 106 includes the sidewalls and the bottom wall of the processing chamber 101. The dielectric chamber lid 108 may be constructed of any suitable dielectric, such as quartz. In some embodiments, the dielectric chamber lid 108 may take on different shapes (e.g., a dome shape). In some embodiments, the chamber lid 108 may be coated with a ceramic coating, as described further herein. A gas nozzle 131 having an inlet 132 is fluidly connected to the gas panel 130 and the processing chamber 101. Gas nozzle 131 may be any suitable gas nozzle, including bulk ceramics, which are described further below.

[0015] An opening 154 is formed through the chamber body 106. The opening 154 is sized for transfer of substrates to and from the processing chamber 101. The opening 154 is disposed in a sidewall of the chamber body 106. The opening 154 is part of a valve between the processing chamber assembly 100 and a cluster tool (not shown). The opening 154 is part of a slit valve or press and seal valve assembly. A valve liner door 156 disposed adjacent the opening 154 is a tin or lead material. The liner door 156 includes a ceramic liner, such as yttrium zirconium oxide. The ceramic liner can be similar to other ceramic liners described herein.

[0016] A detector 122 is mounted in the chamber body 106 to facilitate determining when the gas mixture in the chamber 101 has been activated into a plasma. The detector 122 may, for example, detect radiation emitted by the excited gas or use optical emission spectroscopy (OES) to measure the intensity of one or more wavelengths of light associated with the generated plasma. The plasma source 160 overall produces a plasma 136 from the gas mixture 134 for processing the deposited thin film.

[0017] The chamber body 106 includes an upper chamber body 111 and a lower chamber body 113. The upper chamber body 111 is an upper portion of the chamber body 106, and thus the upper chamber body 111 includes the opening 154, the detector 122, and the throttle valve 138 disposed within the upper chamber body 111. The upper chamber body 111 is adjacent to the chamber lid 108. The upper chamber body forms at least a portion of the processing chamber 101. The upper chamber body 111 further includes an upper liner 109 lining the interior of the upper chamber body 111.

[0018] The lower chamber body 113 is a lower portion of the chamber body 106, and thus the lower chamber body 113 includes a vacuum pump 140 and a pedestal 104 disposed within the lower chamber body 113. The vacuum pump 140 is disposed in an opening within the lower chamber body 113. The pedestal 104 is disposed above a portion of the lower chamber body 113. The lower chamber body 113 is disposed below the upper chamber body 111. The lower chamber body 113 forms at least a portion of the processing chamber 101. The lower chamber body 113 further includes a lower liner 107 that lines the interior of the upper chamber body 111.

[0019] The upper liner 109 and the lower liner 107 are disposed on the inner surfaces of the upper chamber body 111 and the lower chamber body 113, respectively. The upper liner 109 and the lower liner 107 are copper with a coating of tin, lead, or tin and lead. In some embodiments, the copper can be beryllium copper. The upper liner 109 and the lower liner 107 further include a ceramic coating. The ceramic coating is a yttrium zirconium oxide coating. The yttrium zirconium oxide coating is described in more detail herein.

[0020] In operation, a substrate 128, such as a semiconductor substrate, may be placed on the electrostatic chuck 105, and process gas may be supplied from a gas panel 130 through an inlet 132 to form a gas mixture 134. According to one embodiment, the substrate 128 is a bare silicon wafer. In another embodiment, the substrate 128 is a patterned silicon wafer, such as is commonly used in logic gate, I / O gate, field effect transistor, FinFET, or memory applications. Exemplary process gases that may be used in one or more of the processes described herein are described below. The gas mixture 134 may be energized into a plasma 136 within the processing chamber 101 by application of power from the RF power source 114. The pressure within the processing chamber 101 may be controlled using a throttle valve 138 and a vacuum pump 140. In some embodiments, the temperature of the chamber body 106 may be controlled using a conduit containing liquid (not shown) passing through the chamber body 106, or a heating element (e.g., a heating cartridge or coil) embedded within the chamber body 106, or a heating element (e.g., a heater wrap or tape) wrapped around the processing chamber 101.

[0021] The temperature of the substrate 128 may be controlled by controlling the temperature of the pedestal 104. The temperature of the electrostatic chuck 105 may be controlled in the range of 20-500° C. by use of heating and cooling elements. The substrate 128 is “chucked” to the substrate support surface of the electrostatic chuck 105 during processing to actively control the temperature of the substrate. Temperature control of the electrostatic chuck 105 and the substrate via cooling elements embedded within the pedestal 104 helps reduce undesirable temperature rise due to ion bombardment. Helium (He) gas from a gas source 142 is supplied through a gas conduit 144 to channels (not shown) formed in the pedestal surface below the substrate 128. The helium gas may facilitate heat transfer between the pedestal 104 and the substrate 128. During processing, the pedestal 104 may be heated to a steady state temperature, and then the helium gas may facilitate uniform heating of the substrate 128. The pedestal 104 may be so heated by a heating element, such as a resistive heater embedded within the pedestal 104, or by lamps (not shown) generally directed at the pedestal 104, or at the substrate 128 when the substrate 128 is on the pedestal 104. Using such temperature control, the substrate 128 may be maintained at a first temperature between about 20-500° C. The plasma source 160 components provide the environment for film growth and densification.

[0022] A plasma screen ring 129 is disposed on the pedestal 104 around the outer edge of the substrate 128. The plasma screen ring 129 surrounds the substrate 128. The plasma screen ring 129 improves uniformity of processing (e.g., deposition and etching) near the edge of the substrate 128. The plasma screen ring 129 also protects the lower edge of the substrate 128. In the embodiments described herein, the plasma screen ring 129 is a bulk ceramic plasma screen ring, and thus the plasma screen ring 129 is a yttrium zirconium oxide plasma screen ring or an aluminum oxide plasma screen ring 129. The plasma screen ring 129 can also be an alumina ring with a yttrium zirconium oxide coating. The yttrium zirconium oxide coating can be similar to any of the yttrium zirconium oxide coatings described herein. In some embodiments, the plasma screen ring 129 comprises two connectable / separable plasma screen ring parts, and thus the two connectable plasma screen ring parts engage with each other to form a multi-part plasma screen ring 129. Each of the two plasma screen ring 129 subcomponents is separately coated using any of the ceramic coatings described herein.

[0023] The pedestal 104 is connected to the lower chamber body 113 and the lower liner 107 of the chamber body 106 via one or more fasteners 164. The one or more fasteners 164 are disposed through a bottom of the pedestal 104, the lower chamber body 113, and the lower liner 107. The one or more fasteners 164 may be screws, bolts, or any other suitable fasteners. The one or more fasteners 164 include lead and tin. In some embodiments, the one or more fasteners 164 may be copper fasteners having a lead or tin coating. A fastener cover 162 is disposed over the portion of the fastener 164 disposed within the plasma processing chamber 101. The fastener cover 162 is a bulk ceramic component, such as a yttrium zirconium oxide ceramic component. Alternatively, the fastener cover 162 may be an aluminum oxide ceramic component. The composition of the bulk ceramic fastener cover 162 is described further herein. One or more fasteners 164 and fastener covers 162 disposed on the fasteners 164 are disposed around the outer radius of the base of the pedestal 104. The one or more fasteners 164 connect the pedestal 104, the lower chamber body 113, and the lower liner 107, securing the components together.

[0024] As shown, the plasma source 160 includes a coil element 110, a first impedance matching network 112, an RF power source 114, an electrical ground 117, a shielding electrode 118, an electrical ground 119, a switch 120, and a detector 122. A radio frequency (RF) antenna including at least one inductive coil element 110 is disposed on the dielectric chamber lid 108. In one configuration, as shown in FIG. 1, two coaxial coil elements disposed around a central axis of the processing chamber are driven at an RF frequency to generate a plasma 136 in a processing region of the processing chamber assembly 100. In some embodiments, the inductive coil element 110 may be disposed around at least a portion of the chamber body 106. As shown, one end of the inductive coil element 110 may be coupled to the RF power source 114 through the first impedance matching network 112, and the other end may be connected to the electrical ground 117. The power source 114 is typically capable of generating up to 4 kilowatts (kW) at a frequency of 13.56 MHz. The RF power supplied to the inductive coil element 110 may be pulsed (i.e., switched between on and off states) or power cycled (i.e., varying the power input from high to low levels) at frequencies ranging from 1 to 100 kHz. The average ion density of the plasma 136 is 10 ions per cubic centimeter (cm -3 ) may vary from 1E10 to 1E12 ions. The plasma density may be measured by use of any conventional plasma diagnostic technique, such as self-excited electron plasma resonance spectroscopy (SEERS), Langmuir probe, or other suitable technique. It is believed that the inductively coupled coaxial coil element 110 configuration shown in FIG. 1 offers significant advantages in the control and generation of high density plasma over conventional plasma source configurations, including capacitively coupled plasma source configurations.

[0025] A shielding electrode 118 is disposed between the RF antenna inductive coil element 110 and the dielectric chamber lid 108. The shielding electrode 118 may be alternately electrically floating or coupled to electrical ground 119 via any suitable means for making and breaking electrical connection, such as a switch 120 as shown in FIG.

[0026] As shown, the bias power supply system 161 includes a second impedance matching network 124 and a biasing power supply 126. The pedestal 104 is coupled to the biasing power supply 126 through the second impedance matching network 124. The biasing power supply 126 can generally generate an RF signal having a drive frequency in the range of 1 to 160 MHz and a power between about 0 kW and about 3 kW, similar to the RF power supply 114. The biasing power supply 126 can generate between about 1 W to 1 kilowatt (kW) at a frequency in the range of 2 to 160 MHz using a frequency of 13.56 MHz or a frequency of 2 MHz. Optionally, the biasing power supply 126 can be a direct current (DC) or pulsed DC source. In some embodiments, an electrode coupled to the biasing power supply 126 is disposed within the electrostatic chuck 105. The bias power supply system 161 provides a substrate voltage bias across the substrate 128 to facilitate processing of the deposited thin film. In one embodiment, the RF bias provides energetic ions having an ion energy up to 2000 eV.

[0027] As shown, the controller 146 includes a central processing unit (CPU) 148, a memory 150, and support circuits 152. The controller 146 may interface with the RF power supply 114, the switch 120, the detector 122, and the biasing power supply 126. The controller 146 may be any suitable type of general-purpose computer processor that may be used in an industrial environment to control various chambers and sub-processors. The memory 150 or other computer-readable medium for the CPU 148 may be one or more of any readily available form of memory, such as random access memory (RAM), read-only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote. The support circuits 152 may be coupled to the CPU 148 to support the processor in a conventional manner. Such circuits may include cache, power supplies, clock circuits, input / output (I / O) circuits and subsystems, and the like. In some embodiments, the techniques disclosed herein for activating and maintaining a plasma may be stored in the memory 150 as software routines. The software routines may also be stored and / or executed by a second CPU (not shown) that is located remotely from the hardware being controlled by CPU 148. The controller 146 provides instructions to the processing chamber assembly 100 and the various subcomponents mentioned above for temperature control, bias voltages, gas flow rates, and the like.

[0028] One or more gaskets 166 are disposed between the chamber lid 108 and the chamber body 106, and thus the one or more gaskets 166 are disposed between the chamber lid 108 and the upper chamber body 111. The one or more gaskets 166 help maintain a seal between the chamber lid 108 and the chamber body 106, and also help improve electrical conductivity between the chamber lid 108 and the chamber body 106. The gaskets 166 are nickel-plated copper gaskets or stainless steel gaskets. The gaskets 166 are nickel-plated to reduce particle contamination caused by the gaskets 166 during substrate processing. Similarly, the use of stainless steel gaskets reduces particle contamination within the processing chamber. It has been found that utilizing low melting temperature metals, such as lead, tin, or indium coated gaskets, as the gaskets 166 creates ball or disk defects on the substrate. The low melting temperature metals, such as lead and tin, are extracted by the hydrogen plasma during processing. It has been found that nickel plating the gasket 166 dramatically reduces particulate contamination of the substrate caused by the gasket 166. The nickel plating on the gasket 166 has a thickness in the range of about 1 μm to about 3 mm, such as about 25 μm to about 100 μm, such as about 50 μm to about 80 μm. Similarly, replacing low melting temperature metal gaskets with stainless steel gaskets has been shown to reduce particulate contamination caused by conventional gaskets.

[0029] One or more gaskets 168 are disposed between the upper chamber body 111 and the lower chamber body 113. One or more gaskets 166 maintain a seal between the upper chamber body 111 and the lower chamber body 113 and also help provide a conductive path between the upper chamber body 111 and the lower chamber body 113. The gaskets 166 are nickel-plated copper gaskets or stainless steel gaskets.

[0030] One or more gaskets 170 are disposed between the lower chamber body 113 and the pedestal 104. The one or more gaskets 170 help maintain a seal between the lower chamber body 113 and the pedestal 104. The gaskets 170 also improve the electrical connection between the lower chamber body 113 and the pedestal 104. The gaskets 170 are nickel-plated copper gaskets or stainless steel gaskets. In some embodiments, the gaskets 170 may be disposed between the lower liner 107 and the pedestal 104.

[0031] 2 is a schematic cross-sectional view of a portion of a ceramic coated chamber part 200. The ceramic coated chamber part 200 can be any one of the chamber lid 108, the upper liner 109, the lower liner 107, the liner door 156, the pedestal 104, and the electrostatic chuck 105. The ceramic coated chamber part 200 includes a part 202 and a ceramic coating 204. The part 202 is any one of the chamber lid 108, the upper liner 109, the lower liner 107, the liner door 156, the pedestal 104, or the electrostatic chuck 105.

[0032] The component 202 may include multiple layers, such as a base copper layer coated with a lead or tin layer. The copper layer may be the main component of each of the chamber components 200. The base lead or tin layer may be a layer between the main component and the ceramic coating 204.

[0033] In some embodiments, the component 202 is a single material and does not include multiple layers. The single material may include any one of aluminum oxide, quartz, or copper. The component 202 has a ceramic coating 204 disposed directly thereon.

[0034] The ceramic coating 204 is a coating deposited on the component 202 to minimize contaminant particle deposition on a substrate, such as the substrate 128, in the processing chamber assembly 100. The ceramic coating 204 may include a Y2O3-ZrO2 solid solution. The Y2O3-ZrO2 solid solution is a solid phase solution of Y2O3 and ZrO2 compounds. The Y2O3 and ZrO2 compounds are in a single homogenous phase. The Y2O3-ZrO2 solid solution is about 20 molecular percent to about 50 molecular percent ZrO2. In some embodiments, the Y2O3-ZrO2 solid solution is about 25 molecular percent to about 45 molecular percent ZrO2, such as about 30 molecular percent to about 40 molecular percent ZrO2. In some embodiments, there is a small amount of Y2O liquid residue along with the Y2O3-ZrO2 single phase.

[0035] The ceramic coating 204 may have a coating porosity of about 2% to about 10% (e.g., in one embodiment, less than about 5%). In some embodiments, the porosity of the ceramic coating 204 is less than about 3%, such as less than 2%, such as less than 1%. The ceramic coating 204 has a hardness of about 3-8 gigapascals (GPa) (e.g., in one embodiment, greater than about 4 GPa) and a thermal shock resistance of about 8-20 megapascals (MPa) (e.g., in one embodiment, greater than about 10 MPa). Additionally, the ceramic coating may have an adhesion strength of about 4-20 MPa (e.g., in one embodiment, greater than about 14 MPa). The adhesion strength may be determined by applying a force (e.g., measured in megapascals) to the ceramic coating until the ceramic coating peels off from the ceramic substrate.

[0036] The ceramic coating 204 is formed by spraying or growing a ceramic coating on a ceramic substrate. The part 202 is formed by a sintering process or machining. In an embodiment in which the ceramic coating 204 is spray coated, the ceramic coating 204 is spray coated yttrium zirconium oxide. The spray coated yttrium zirconium oxide includes thicknesses of about 10 μm to about 500 μm, such as about 15 μm to about 400 μm, such as about 20 μm to about 300 μm, such as about 20 μm to about 250 μm. Coating the part with spray coated yttrium zirconium oxide allows the ceramic coating 204 to be thicker than physical vapor deposition (PVD) yttrium zirconium oxide coatings deposited using other ceramic deposition processes and prevents cracking of the ceramic coating 204 at thicknesses greater than about 15 μm. The increased thickness prevents metal contaminants from passing through the ceramic coating 204 during processing and reduces the frequency of maintenance. Spray coated yttrium zirconium oxide is easily applied to large components 202 such as upper liner 109, lower liner 107, liner door 156, pedestal 104, etc. Spray coated yttrium zirconium oxide is applied using thermal spray and / or plasma spray techniques. Thermal and plasma spray techniques may melt a material (e.g., ceramic powder) and spray the molten material onto the component 202. Ceramic coatings may have structural properties significantly different than bulk ceramic materials (e.g., ceramic substrates, etc.).

[0037] Alternatively, the ceramic coating 204 is formed by depositing a ceramic coating on a ceramic substrate through a PVD coating process. In an embodiment in which the ceramic coating 204 is deposited using a PVD coating process, the ceramic coating 204 is a PVD coated yttrium zirconium oxide. The PVD coated yttrium zirconium oxide includes a thickness of less than about 15 μm, such as less than about 10 μm, such as about 0.5 μm to about 10 μm, such as about 0.75 μm to about 7.5 μm, such as about 1 μm to about 5 μm. The PVD coated yttrium zirconium oxide is applied to smaller components 202, such as the chamber lid 108. The PVD coated yttrium zirconium oxide has a lower porosity than the spray coated yttrium zirconium oxide. The spray coated zirconium oxide has a porosity of about 0.5% to about 5%, such as about 1% to about 4%, such as about 2% to about 3%. The PVD coated yttrium zirconium oxide has a porosity of about 0% to about 1%, such as about 0% to about 0.5%, such as about 0% to about 0.25%.

[0038] The PVD coated yttrium zirconium oxide is a relatively thin coating layer. The PVD coating is advantageous for use on the chamber lid 108 because the PVD coating can withstand the effects of the hydrogen plasma adjacent to the chamber lid 108. The PVD coating deposits more easily on flat surfaces, such as the bottom surface of the chamber lid 108. The PVD coating of the second yttrium zirconium oxide coating is more uniform and has a higher density than the spray-on coating of spray-coated yttrium zirconium oxide. Alternatively, the PVD coating process can be a CVD or ALD coating process. The CVD and ALD processes can produce similar results to the PVD coating, such as similar porosity and thickness.

[0039] In some embodiments, a laminated or sintered yttrium zirconium oxide layer is formed on a substrate, such as on the gas nozzle 131, the plasma screen ring 129, the chamber lid 108, and / or the fastener cover 162. The laminated or sintered yttrium zirconium oxide layer may be formed using two different deposition techniques and may have various physical properties. In some embodiments, the laminated or sintered yttrium zirconium oxide layer is formed by deposition of a PVD coated yttrium zirconium oxide layer on a spray coated yttrium zirconium oxide layer. Deposition of a PVD coated layer on a spray coated layer forms a laminated yttrium zirconium oxide layer. A laminated yttrium zirconium oxide layer is a layer formed by one or more successive depositions of yttrium zirconium oxide via spray coating and PVD coating.

[0040] The spray-coated yttrium zirconium oxide layer is formed on the substrate before a second yttrium zirconium oxide layer is formed on the substrate. The spray-coated yttrium zirconium oxide layer is similar to the spray-coated yttrium zirconium oxide layer described herein. The spray-coated yttrium zirconium oxide layer is a low stress layer, and therefore the spray-coated yttrium zirconium oxide adheres well to the substrate with low stress. A PVD coating, such as PVD-coated yttrium zirconium oxide, is deposited on the spray-coated yttrium zirconium oxide layer. The PVD-coated yttrium zirconium oxide layer is a higher stress layer than the spray-coated yttrium zirconium oxide layer when the PVD-coated yttrium zirconium oxide layer itself is deposited on the substrate. By depositing a PVD coated yttrium zirconium oxide layer on top of the spray coated yttrium zirconium oxide layer, the stress in the PVD coated yttrium zirconium oxide layer is reduced, and therefore the stress in the PVD coated yttrium zirconium oxide layer on top of the spray coated yttrium zirconium oxide layer is lower than the higher stress layer of the spray coated yttrium zirconium oxide layer because the spray coated yttrium zirconium oxide layer acts as a bridge layer. Depending on the structure, porosity, and thickness of the spray coated yttrium zirconium oxide layer and the PVD coated yttrium zirconium oxide layer, the stress in the coating is reduced by about 10% to about 90% compared to the stress of the PVD coating itself.

[0041] Another embodiment of the laminated yttrium zirconium oxide layer is a sintered yttrium zirconium oxide layer. In some embodiments, the sintered yttrium zirconium oxide layer is formed on the chamber lid 108. The sintered yttrium zirconium oxide layer has near zero porosity, such that the sintered yttrium zirconium oxide layer approximates the properties of yttrium zirconium oxide bulk ceramic material. In some embodiments, the porosity of the sintered yttrium zirconium oxide layer is less than about 0.2%, such as less than about 0.1%, such as less than about 0.05%, such as less than 0.01%. In some embodiments, the sintered yttrium zirconium oxide layer has a thickness of about 0.5 mm to about 10 mm, such as about 1 mm to about 5 mm, such as about 1 mm to about 3 mm. The sintered yttrium zirconium oxide layer is formed using a sintering process in which yttrium zirconium oxide powder is pressed against the surface of the chamber lid 108 to form the sintered yttrium zirconium oxide layer. The sintered yttrium zirconium oxide layer is considered a laminate layer because it is coated onto a bulk ceramic substrate, such as the bulk ceramic chamber lid 108. Alternatively, a layering process similar to repeated spray and PVD coatings of yttrium zirconium oxide is performed. Then, after the repeated layering of spray coated yttrium zirconium oxide and PVD coated yttrium zirconium oxide, the layers may be pressurized and heated to change and densify the final layer structure to a structure similar to that of a sintered yttrium zirconium oxide layer.

[0042] The sintered yttrium zirconium oxide layer is thicker than both the spray-coated yttrium zirconium oxide layer and the PVD-coated yttrium zirconium oxide layer. The sintered yttrium zirconium oxide layer may be used as a ceramic coating 204 on some processing chamber assembly 100 components, such as the chamber lid 108. By using either the laminated yttrium zirconium oxide layer or the sintered yttrium zirconium oxide layer as the ceramic coating 204 on the chamber lid 108, the contaminant particles deposited on the substrate by the lid 108 are dramatically reduced compared to either the spray-coated yttrium zirconium oxide layer or the PVD-coated yttrium zirconium oxide layer, since the laminated or sintered yttrium zirconium oxide layer is better able to withstand high hydrogen plasma concentrations adjacent to the chamber lid 108.

[0043] The spray coated yttrium zirconium oxide layer, the PVD coated yttrium zirconium oxide layer, the laminated yttrium zirconium oxide layer, and the sintered yttrium zirconium oxide layer can all be formed from a Y2O3-ZrO2 solid solution. The Y2O3-ZrO2 solid solution is a purified Y2O3-ZrO2 solution. The Y2O3-ZrO2 solid solution is purified before being deposited as a coating to reduce the amount of lead, tin, indium, and other low melting point metals in the Y2O3-ZrO2 solid solution. The Y2O3-ZrO2 solid solution is purified at least once to obtain a concentration of Y2O3 and ZrO2 of 99% or more, such as 99.5% or more Y2O3 and ZrO2, such as 99.9% or more Y2O3 and ZrO2, such as 99.99% or more Y2O3 and ZrO2. In some embodiments, the tin in the Y2O3-ZrO2 solid solution is less than 0.2 nanograms / gram and the lead is less than 15 nanograms / gram. In some embodiments, the tin in the Y2O3-ZrO2 solid solution is less than 0.2 nanograms / gram and the lead is less than 0.1 nanograms / gram. In yet other embodiments, the tin in the Y2O3-ZrO2 solid solution is less than 0.1 nanograms / gram and the lead is less than 0.15 nanograms / gram. The Y2O3-ZrO2 solid solution may have less than 0.05 nanograms / gram of tin and less than 0.01 nanograms / gram of lead. The reduced concentrations of lead and tin result in a corresponding reduction in substrate contamination.

[0044] In some embodiments, the component 202 does not have a ceramic coating 204. Instead, the component 202 itself may be a ceramic component. Components 202 that may be ceramic components include the gas nozzle 131, the plasma screen ring 129, the chamber lid 108, and the fastener cover 162. The component 202 that is a bulk ceramic component may be an aluminum oxide (Al2O3), an Al2O3-Y2O3 component, or an yttrium zirconium oxide component. The yttrium zirconium oxide component is a bulk ceramic component. The yttrium zirconium oxide component may have similar properties to a laminated yttrium zirconium oxide coating. The ceramic component has a porosity of less than about 0.2%, such as less than about 0.1%, such as less than about 0.05%, such as less than 0.01%. The ceramic component has a concentration of 99% or more of Y2O3 and ZrO2, such as 99.5% or more of Y2O3 and ZrO2, such as 99.9% or more of Y2O3 and ZrO2, such as 99.99% or more of Y2O3 and ZrO2. In some embodiments, which may be combined with other embodiments, the yttrium zirconium oxide ceramic component has less than 0.2 nanograms / gram of tin and less than 15 nanograms / gram of lead. In some embodiments, the yttrium zirconium oxide ceramic component has less than 0.2 nanograms / gram of tin and less than 0.1 nanograms / gram of lead. In yet another embodiment, the yttrium zirconium oxide ceramic component has less than 0.1 nanograms / gram of tin and less than 0.15 nanograms / gram of lead. The yttrium zirconium oxide ceramic component may have less than 0.05 nanograms / gram of tin and less than 0.01 nanograms / gram of lead.

[0045] The ceramic components are used to reduce contaminant particle deposition on the substrate. The ceramic components prevent deposition of tin or lead particles and also reduce the amount of yttrium, zirconium, and silicon oxide (SiO2) particles that would otherwise be released by the components. In some embodiments, the chamber lid 108 is an aluminum oxide (Al2O3) bulk ceramic. In other embodiments, the chamber lid 108 is a bulk ceramic of an Al2O3-Y2O3 ceramic composite. The chamber lid 108 is replaced with a bulk ceramic Al2O3 or Al2O3-Y2O3 to reduce the amount of SiO2 particles that deposit on the substrate. The Al2O3 or Al2O3-Y2O3 chamber lid can still have a ceramic coating, such as ceramic coating 204, deposited thereon. The ceramic coating 204 can be any one of the coating types described herein, but a laminated yttrium zirconium oxide layer provides the greatest reduction in the amount of deposited contaminant particles.

[0046] 3 is a method 300 for processing a substrate. The method includes a first operation 302 of providing a substrate into a processing chamber, a second operation 304 of performing a hydrogen plasma treatment, and a third operation 306 of removing the substrate from the processing chamber. The method 300 may be looped continuously to process many substrates over time.

[0047] A first operation 302 of providing a substrate in a processing chamber is performed by a robot arm. From a cluster tool, the robot arm extends into a processing chamber, such as the processing chamber assembly 100 described herein. A substrate, such as substrate 128, is placed on the top surface of the electrostatic chuck 105. The substrate may be a silicon substrate or may be a doped silicon substrate. In some embodiments, the substrate has already been through some other processing steps, and thus the substrate has other features formed thereon that are not described herein. The substrate moves into the processing chamber and undergoes a plasma treatment process, such as a hydrogen plasma treatment process.

[0048] The second operation 304 of performing hydrogen plasma treatment may include performing any type of substrate process in which hydrogen plasma treatment is utilized. The hydrogen plasma treatment may be a hydrogen etching process, whereby hydrogen radicals and / or hydrogen ions are utilized to etch the surface of the substrate and any features formed on the substrate. In another embodiment, the hydrogen plasma treatment may be a cleaning process, whereby the substrate is cleaned by hydrogen plasma. The hydrogen plasma treatment may include a carbon removal process, a process for removing chlorine / fluoride from metals, an oxygen removal process, a high-k metal gate stack process, and a mid-end-of-line contact process. Current chamber hardware is generally not compatible with hydrogen plasma treatment as completed in the second operation 304. Current chamber hardware generates large amounts of metallic contaminants and other contaminant particles. Using the chamber components described herein, the amount of metallic and non-metallic contaminant particles deposited on the substrate during the hydrogen plasma treatment process is dramatically reduced.

[0049] A third operation 306 of removing the substrate from the processing chamber is performed after completion of the hydrogen plasma treatment. Removal of the substrate from the processing chamber may be completed by a robot arm similar to the robot arm used in the first operation 302. The substrate may be removed from the processing chamber and transferred into a transfer chamber of the cluster tool. The substrate may then undergo other processing steps on other processing chambers connected to the cluster tool.

[0050] After completion of the third operation 306, another substrate may be provided in the processing chamber and the method 300 may be repeated until maintenance is performed on the processing chamber. Due to the use of a yttrium zirconium oxide coating throughout the processing chamber and bulk ceramic components, the method 300 may be performed for a longer amount of time before maintenance is completed as compared to conventional processing chambers.

[0051] FIG. 4 is a diagram 400 illustrating substrate particle contamination levels. Diagram 400 is a bar graph illustrating aluminum particle concentration on a substrate after a hydrogen plasma treatment process similar to that completed in operation 304 of method 300 in a processing chamber such as processing chamber assembly 100. In the hydrogen plasma treatment process utilized to obtain the data for diagram 400, the process was performed at 450 degrees Celsius. 750 Watts was applied through the inductive coil element 110, the pressure was maintained at 50 mTorr, the plasma processing chamber 101 was filled with 5% H2 and 95% Argon, and the process was performed for 90 seconds. The particles were 1×10 10 atoms / cm 2 The aluminum particles are disposed on the front side of a substrate, such as substrate 128.

[0052] The first contaminant source level 401, the second contaminant source level 402, the third contaminant source level 403, the fourth contaminant source level 404, the fifth contaminant source level 405, and the sixth contaminant source level 406 are each above a desired contaminant concentration threshold 410.

[0053] The desired contaminant concentration threshold 410 is 1×10 10 atoms / cm 2 As shown in diagram 400, first, second, third, fourth, fifth, and sixth pollutant sources 401, 402, 403, 404, 405, 406 have a concentration of less than 1×10 10 atoms / cm 2 The first, second, third, fourth, fifth, and sixth contaminant sources 401, 402, 403, 404, 405, 406 are non-ceramic or non-ceramic coated contaminant sources within the chamber assembly 100. By utilizing the coatings and component compositions described herein, the desired contaminant concentration threshold 410 is met and the contaminants generated by each of the contaminant sources are reduced or completely eliminated.

[0054] 5 is a graph 500 illustrating substrate particle contamination caused by a process chamber lid. A first trend line 501 illustrates the number of contaminant particle adders disposed on a substrate, such as substrate 128, in a process chamber, such as plasma processing chamber 101, when a quartz lid having a PVD yttrium zirconium oxide coating is utilized. A second trend line 502 illustrates the number of contaminant particle adders disposed on a substrate, such as substrate 128, in a process chamber, such as plasma processing chamber 101, when an aluminum oxide chamber lid having an yttrium oxide (Y2O3) coating is utilized on the process chamber.

[0055] Aluminum oxide chamber lids with a yttrium oxide coating provide more consistent reduction in particle contamination over a greater number of wafer processing cycles. The use of a laminated or sintered yttrium zirconium oxide coating allows quartz lids to achieve similar or better results than aluminum oxide chamber lids with a yttrium oxide coating, thus reducing particle contamination of the substrate.

[0056] The embodiments described herein may be modified to reduce particle contamination on the substrate, reduce overall cost, or improve ease of application of coatings on chamber components. In an exemplary embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of quartz, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray-coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk yttrium zirconium oxide ceramic, an upper liner 109 coated with a spray-coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray-coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0057] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of aluminum oxide or Al2O3-Y2O3 bulk ceramic with a PVD coated yttrium zirconium oxide layer, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk yttrium zirconium oxide ceramic, an upper liner 109 coated with a spray coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0058] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of aluminum oxide or Al2O3-Y2O3 ceramic composite having a laminated or sintered yttrium zirconium oxide coating, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk yttrium zirconium oxide ceramic, an upper liner 109 coated with a spray coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0059] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of aluminum oxide or Al2O3-Y2O3 ceramic composite with a yttrium oxide coating, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk yttrium zirconium oxide ceramic, an upper liner 109 coated with a spray coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0060] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of quartz having a laminated or sintered yttrium zirconium oxide coating, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray-coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk aluminum oxide ceramic, an upper liner 109 coated with a spray-coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray-coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0061] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of aluminum oxide or Al2O3-Y2O3 ceramic composite with a PVD coated yttrium zirconium oxide layer, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk aluminum oxide ceramic, an upper liner 109 coated with a spray coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0062] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of aluminum oxide or Al2O3-Y2O3 ceramic composite with a laminated or sintered yttrium zirconium oxide coating, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk aluminum oxide ceramic, an upper liner 109 coated with a spray coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0063] In another embodiment, the processing chamber assembly 100 includes a chamber lid 108 made of aluminum oxide or Al2O3-Y2O3 ceramic composite with a yttrium oxide coating, a gas nozzle 131 made of bulk yttrium zirconium oxide ceramic, a liner door 156 coated with a spray coated yttrium zirconium oxide layer, a plasma screen ring 129 made of bulk aluminum oxide ceramic, an upper liner 109 coated with a spray coated yttrium zirconium oxide layer, a lower liner 107 coated with a spray coated yttrium zirconium oxide layer, and a fastener cover 162 made of bulk yttrium zirconium oxide ceramic.

[0064] In some embodiments, the plasma screen ring 129 may include a plasma screen ring having a spray-coated yttrium zirconium oxide layer. The spray-coated yttrium zirconium oxide layer may be utilized on the plasma screen ring 129 in any of the embodiments described herein. Additionally, the spray-coated yttrium zirconium oxide may be utilized on plasma screen rings 129 not described herein, such as a quartz plasma screen ring.

[0065] In yet another embodiment, any of the gas nozzle 131, the plasma screen ring 129, the chamber lid 108, or the fastener cover 162 may be made from a bulk aluminum oxide ceramic. Additionally, any of the gas nozzle 131, the plasma screen ring 129, the chamber lid 108, or the fastener cover 162 described in the embodiments herein may include a first yttrium zirconium oxide coating.

[0066] While the above is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, the scope of the disclosure being determined by the claims that follow.

Claims

1. 1. An apparatus for processing a substrate, comprising: A chamber body; a lower liner disposed within the chamber body; an upper liner disposed within the chamber body above the lower liner; a liner door disposed through the upper liner and the chamber body, each of the lower liner, the upper liner, and the liner door further comprising a spray coated yttrium zirconium oxide layer disposed thereon; a chamber lid disposed on the chamber body; a gas nozzle disposed through the chamber lid, the gas nozzle further comprising a bulk ceramic gas nozzle; An apparatus comprising:

2. 10. The apparatus of claim 1, further comprising a plasma screen ring disposed over the electrostatic chuck, the plasma screen ring being a bulk ceramic plasma screen ring.

3. 10. The apparatus of claim 1, further comprising one or more fasteners disposed through the lower liner and the substrate support pedestal to secure the lower liner and the substrate support pedestal, each of the one or more fasteners having a bulk yttrium zirconium oxide ceramic fastener cover disposed thereon.

4. The chamber lid is made of Al ２ O ３ Lid and Y ２ O ３ The device of claim 1 comprising a coating.

5. The chamber lid is made of Al ２ O ３ -Y ２ O ３ Ceramic composites and Y ２ O ３ The device of claim 1 comprising a coating.

6. The apparatus of claim 1 , wherein the chamber lid further comprises a quartz lid.

7. The chamber lid is an aluminum oxide lid or an Al lid having a laminated or sintered yttrium zirconium oxide coating. ２ O ３ -Y ２ O ３ The device of claim 1 further comprising one of a lid.

8. The yttrium zirconium oxide is Y ２ O ３ -ZrO ２ The device of claim 1 further comprising a solid solution.

9. The apparatus of claim 1 , wherein one or more gaskets are disposed between the lower chamber body and the upper chamber body.

10. The apparatus of claim 9 , wherein one or more gaskets are disposed between the upper chamber body and the chamber lid.

11. The apparatus of claim 10 , wherein one or more gaskets are disposed between the lower chamber body and the substrate support pedestal.

12. The apparatus of claim 11 , wherein each of the one or more gaskets comprises a nickel-plated gasket or a stainless steel gasket.

13. 1. An apparatus for processing a substrate, comprising: A chamber body; a lower liner disposed within the chamber body; an upper liner disposed within the chamber body above the lower liner; a liner door disposed through the upper liner and the chamber body, each of the lower liner, the upper liner, and the liner door further comprising a spray-coated yttrium zirconium oxide layer disposed thereon, the yttrium zirconium oxide being Y; ２ O ３ -ZrO ２ a liner door further comprising a solid solution; a chamber lid disposed on the upper liner; a gas nozzle disposed through the chamber lid, the gas nozzle further comprising a bulk ceramic gas nozzle; one or more nickel-plated or stainless steel gaskets disposed between the lower liner and the upper liner, between the upper liner and the chamber lid, and between the lower liner and a substrate support pedestal; An apparatus comprising:

14. 14. The apparatus of claim 13, wherein each of the spray coated yttrium zirconium oxide layers has a thickness of about 25 microns to about 300 microns.

15. 14. The apparatus of claim 13, wherein the chamber lid further comprises an aluminum oxide lid and a PVD coated yttrium zirconium oxide layer, the PVD coated yttrium zirconium oxide layer having a thickness of about 0.5 microns to about 10 microns.

16. The spray-coated yttrium zirconium oxide layer has a Y concentration of 99% or more. ２ O ３ and ZrO ２ 14. The apparatus of claim 13, wherein the purified yttrium zirconium oxide coating has the formula:

17. 17. The apparatus of claim 16, wherein the bulk ceramic gas nozzle is a yttrium zirconium oxide ceramic gas nozzle having a porosity of about 0.2% or less.

18. a plasma screen ring disposed over the electrostatic chuck, the plasma screen ring being made of bulk yttrium zirconium oxide ceramic, or Y ２ O ３ -ZrO ２ 14. The apparatus of claim 13, further comprising a plasma screen ring that is an alumina ring coated with a plasma.

19. 1. An apparatus for processing a substrate, comprising: A chamber body; a lower liner disposed within the chamber body; an upper liner disposed within the chamber body above the lower liner; a liner door disposed through the upper liner and the chamber body, each of the lower liner, the upper liner, and the liner door further comprising a spray coated yttrium zirconium oxide layer disposed thereon; a chamber lid disposed on the upper liner; a gas nozzle disposed through the chamber lid, the gas nozzle further comprising a bulk ceramic gas nozzle; an induction coil disposed above the chamber lid; a shielding electrode disposed between the induction coil and the chamber lid, The spray-coated yttrium zirconium oxide layer has a thickness of about 25 microns to about 300 microns, and the spray-coated yttrium zirconium oxide layer has a Y concentration of 99% or more. ２ O ３ and ZrO ２ a shield electrode, the shield electrode being a purified yttrium zirconium oxide coating having An apparatus comprising:

20. 20. The apparatus of claim 19, wherein the chamber lid further comprises an aluminum oxide lid and a PVD coated yttrium zirconium oxide coating.

Images