LED module, LED display module, and method for manufacturing the module

Abstract

To solve the problem that unified chip architecture and a size of an identical or easily changeable structure element are required for a purposes and an application.SOLUTION: A method for manufacturing a module provided with one or more photoelectron structure elements includes: a step for creating at least one layer stack providing a base module having on a carrier 1 a first layer 3, an active layer 7 formed on the first layer, and a second layer 5 formed on the active layer; a step for exposing a surface area of the first layer that does not face the carrier; a step for forming a first contact 9 in a surface area of the second layer that does not face the carrier; and a step for forming a second contact 11 in the surface area of the first layer that does not face the carrier.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] This patent application claims the priority of the following German applications: DE 102019110500.5, filed April 23, 2019, DE 102019125875.8, filed September 25, 2019, and PCT / EP2020 / 052191, filed January 29, 2020, the disclosures of which are incorporated herein by reference.

[0002] Background technology The invention relates to electronic components, in particular lateral light-emitting diodes, i.e. components with horizontal contacts on a substrate or carrier.

[0003] Optoelectronic components, but also other electronic components in general, are used in a wide range of applications. In the field of optoelectronic components, apart from display applications in the consumer, commercial or automotive sector, there are further application possibilities, such as video walls or lighting units. These applications differ in terms of the shape and size of the components, even if the electrical parameters are similar. For this reason, optoelectronic components are often constructed and further processed as individual components or modules. Thus, optoelectronic components suitable for them have often been specially manufactured and optimized for the respective application, which means that their use in other applications has to accept disadvantages, such as high costs.

[0004] Recently, particularly in the automotive and consumer sectors, there has been a demand for sensors to be installed in addition to optoelectronic components, so that, for example, bio- or vital parameters of a user can be detected. Up until now, these have been installed in consumer products as separate components. However, the need for, for example, additional orifices or additional apertures in the housing is no longer desirable.

[0005] In this connection, DE 10 2018 119 376 A1 shows a display for displaying optical information, which comprises a carrier on which a number of optoelectronic structural elements are arranged adjacent to one another, the structural elements being formed in such a way that they emit visible electromagnetic radiation from a first side of the carrier, and at least one optical sensor is provided on the carrier in order to receive the electromagnetic radiation incident on the first side of the carrier.

[0006] The above requirements and specifications call for uniform chip architectures and uniform or easily changeable sizes of structural elements for the above uses and applications.

[0007] Summary of the Invention For the production of arrangements with several optoelectronic structural elements, it would be advantageous to provide subunits of structural elements or LEDs during processing, separate them and then post-process them. On the one hand, this allows the subunits to be tested individually. If a structural element or LED of a subunit fails, the entire application does not have to be replaced, but only the subunit. The same applies to displays with several subunits. Again, only the subunit with the defective structural element is replaced, and not the entire display. On the other hand, the adjustment of process steps allows for greater manufacturing freedom and allows different sizes to be produced. This approach is particularly suitable as a modular architecture for LEDs.

[0008] According to one aspect of the modular architecture, the method includes the following steps: - producing at least one layer stack providing a base module on a carrier; - applying a first contact to a surface area of ​​the layer stack that does not face the carrier; - applying a second contact to a surface area of ​​the first layer not facing the carrier. A method for manufacturing a structural element module, in particular an LED module, is proposed, comprising:

[0009] In this manner, at least one layer stack is contemplated providing a base module having a first layer formed on a carrier, with an active transition layer formed on the first layer, and a second layer formed on the active transition layer.

[0010] For this, follow these steps: - exposing a surface area of ​​the first layer that does not face the carrier; - connecting a first contact to a surface area of ​​the second layer not facing the carrier; - connecting second contacts to surface areas of the first layer not facing the carrier. This can be done.

[0011] Thus, a structural element module, in particular an LED module, comprises at least one layer stack providing a base module having a first layer formed on a carrier, an active transition layer formed on the first layer and a second layer formed on the active transition layer, with a first contact connected to a surface area of ​​the second layer not facing the carrier and a second contact connected to a surface area of ​​the first layer not facing the carrier.

[0012] In this way, a base module can be created as a basic element of a structural element module, in particular with a contact surface of a contact. By structural element module is meant in particular an optoelectronic structural element module or a light-emitting diode module or LED module. However, the invention is not limited thereto, and various electronic modules can be used.

[0013] The base module is part of a larger system, but in its simplest form it can contain LEDs. In one embodiment, the base module contains a plurality of LEDs, at least two. These can be controlled individually or built with redundancy. Thus, according to the principle of modularity, the whole can be divided into parts, which are called modules. With a common function of emitting light, rectangular or any other shape, the modules can be easily assembled.

[0014] The starting point is, in one embodiment, an LED with a lateral architecture, the size of which is adapted to meet particularly demanding application requirements, for example with regard to the light-emitting surface, current carrying capacity or temperature stability, and the LED architecture is then adapted so that a light-emitting diode consisting of several subunits of this structural element or LED can be produced by simply adjusting one process step, in particular by using different masks for the layer stack or mesa structure, in order to meet the requirements of other applications as well.

[0015] For example, the basic size of the base module is 100 μm×100 μm to 500 μm×500 μm. Besides the square size, other shapes, for example rectangular or hexagonal, can also be used. With this mask and appropriate contact or singulation, components of 100 μm×200 μm or 300 μm×300 μm can also be easily produced, which are also suitable for various other applications. As mentioned above, the component includes one or more base modules, which may also include one or more structural elements.

[0016] A modular design, in which the required extremely small structural elements are treated as base units or modules, which can then be processed with only minor adjustments into components with dimensions several times larger than the base unit (base module), saves development resources and provides a certain degree of freedom in the manufacture of such components. For example, if applications for LED areas with different brightness or pixel pitch become necessary, the required chips can be manufactured relatively easily.

[0017] In one embodiment, the mesas (layer stacks) as well as the contact surfaces are patterned differently. This changes two steps, but it is no longer necessary to ensure that all contact pads are connected. By using a horizontal chip architecture, an additional process step for n-contact connection, as in the case of vertical chips after assembly on the target substrate, can be avoided. This simplifies manufacturing compared to other manufacturing techniques and therefore reduces costs.

[0018] According to a further aspect, the second contact can be formed to be electrically insulated from the transition layer and the second layer by a dielectric and to extend onto a surface region of the second layer that does not face the carrier.

[0019] Depending on the requirements of the application, the base modules are arranged in a matrix along at least one row and at least one column on the XY plane, with the base modules in each row being oriented in the same direction. The base modules in two adjacent rows are oriented in the same direction as necessary. In this way, an electrical series circuit of the base modules can be easily realized.

[0020] Alternatively, the orientation of the base modules of two adjacent rows is reversed, so that the same contacts are placed next to each other. In this way, the electrical parallel circuit of the base modules is easily realized. Since both n-type and p-type contacts are located on the underside of the lateral structural element, it is advantageous to arrange the chips in an alternating order. This ensures that for a chip with a 2xX configuration, the p-side contacts of both base elements are located in the center of the chip, while the n-type contacts are located on the outside, minimizing the risk of a potential short circuit.

[0021] In some embodiments, the detachment of at least one light-emitting diode module from the plurality of base modules is performed by deep flank patterning through the first layer, in particular from the side of the second layer. This can be performed by laser lift-off, in particular from the side of the carrier that does not face the modules. Etching processes are also conceivable.

[0022] Another aspect concerns whether and to what extent such subunits can be equipped with sensors. In some applications, for example for display or automotive applications, it may be useful to provide sensors that also detect the reaction or other parameters of the user in front of the display. For this, for example, a photosensor can be used that detects the direction of gaze or a change in the direction of gaze. Similarly, the amount of light can be detected to, for example, brighten or dim the image. For example, a proximity sensor can be easily implemented that reacts to a detected person and activates the display or other application. The same sensor can also be used for the display in automotive applications. Similarly, a sensor that detects the attention of the driver is possible, and measures can be taken if necessary if drowsiness is detected. In this way, the vital parameters of the user can also be ascertained without the need for additional orifices in the housing.

[0023] The inventors recognize that future displays may no longer have sensors located outside the display. Rather, it is necessary to realize the function of the sensor behind or inside the full display as an alternative to the previous separate solutions. In this case, the division into base modules disclosed herein and their combination to create larger units is utilized. In this case, redundant positions of structural elements can be implemented with sensors instead of the structural elements originally intended for them. For example, in the context of a display or video wall, this means that structural elements for individual pixels or sub-pixels are omitted or replaced with sensors.

[0024] Thus, according to a first aspect, a display device is proposed with a target matrix formed on a first carrier or end carrier, in which there are locations that can be occupied by optoelectronic structural elements or LEDs. Furthermore, a number of structural elements, in particular LEDs, are formed on a second carrier or replacement carrier, so that a start matrix is ​​obtained with equally spaced locations that can be occupied by structural elements with respect to the target matrix. In a subsequent step, the structural elements are grouped on the second carrier to form a number of modules, which are separated from the second carrier and arranged on the first carrier. This arrangement is performed in such a way that the modules are positioned and electrically connected on the first carrier in the target matrix, such that a number of locations remain in the target matrix that are not occupied by structural elements. At least one sensor element is positioned and electrically connected in at least some of the unoccupied locations. In some aspects, the locations that can be occupied by the target matrix correspond to subpixel locations or pixel locations.

[0025] Furthermore, modules or subunits of optoelectronic structural elements as disclosed herein are provided, the size and spacing of which correspond to the corresponding parameters of the occupyable locations of the target matrix. The subunits are grouped together in modules and positioned and electrically contacted on the target matrix in such a way that a number of locations remain unoccupied by structural elements. At least one sensor element is positioned and electrically connected to these locations, at least partially. In this way, the modules or subunits can be positioned on a display module or display, leaving some locations free, where sensors can be mounted. The sensor thus becomes part of the display device. This has several advantages. For example, the light falling on the display can be measured directly and then the illuminance of the modules or even the individual LEDs can be adjusted depending on the location.

[0026] According to another aspect, a method for manufacturing a display device is proposed. It comprises a target matrix formed on a first carrier or an end carrier and having locations which can be occupied by structural elements arranged in rows and columns. In the case of a display device, the locations can correspond to sub-pixels. Moreover, the locations exhibit a size and spacing which substantially corresponds to the modules disclosed herein. In other words, the target matrix comprises locations which are arranged in rows and columns and which can be occupied by modules of optoelectronic structural elements.

[0027] Thus, the modules are manufactured as disclosed herein, for example by shallow and deep mesa etching and grouping into modules. The modules thus manufactured are removed from the exchange carrier and placed in the free locations of the target matrix on the end carrier and electrically bonded to the end carrier. However, in this process, the previously defined locations are left free. These locations are each occupied, positioned and electrically connected by at least one sensor element.

[0028] The end carrier may have wiring connections to the modules and structural elements and, for example, individual LEDs. Additionally, in some embodiments, the end carrier includes at least one power supply and / or drive control electronics for the applied modules or structural elements. In other embodiments, the end carrier further includes electronics for reading the at least one sensor element. The at least one sensor element may include a photosensor. Further examples can be found in the description below.

[0029] The prepared LED modules or subunits and the associated areas of the target matrix on the end carrier must be identically rasterized or have the same size and possibly the same periodicity, especially when large modules with several rows or columns are transferred and applied on the end carrier, and the same spacing is desirable.

[0030] In one embodiment, one or more contact areas of a module or subunit are matched with associated contact areas of an occupiable location on the end carrier. In this manner, the module can be incorporated into a target matrix on the end carrier. The module can then be inserted or integrated into the target matrix on the end carrier.

[0031] This makes it possible to construct a display device in which the modules, in particular the LED modules, are equally spaced from one another in all structural elements. In one embodiment, the target matrix of the display device is then implemented with very small spacing between the occupiable locations. In this embodiment, each occupiable location can be implemented with a very small module to be manufactured. This results in a display device that allows a very high resolution due to the small size and close spacing of the pixels, and that can be placed very close to the user's eyes.

[0032] Alternatively, the occupiable locations of the target matrix may be spaced apart from each other. Similarly, in some embodiments, multiple subunits as disclosed herein may be located in such an occupiable location. In some embodiments, the target matrix locations located in a row and / or column may be spaced apart from each other by a distance b. The modules with structural elements are each the same size and have a distance a from each other. The distance a may be the same as the distance b, which corresponds substantially to the above configuration. However, the distance b may be several times the distance a. The larger the distance b between the occupiable locations is, since the occupiable locations are also the contact surfaces of the LED modules or subunits, the larger the available space is. In this way, larger modules can be used or multiple modules can be combined. For example, if the distance b is 2.5 times the distance a, one module made up of four individual modules can be placed in the occupiable location, and a distance still remains between the modules located in adjacent locations.

[0033] This configuration allows for various applications. In the case of display devices, the smaller the distances a, b, the higher the resolution and the potentially lower the sensitivity of the viewer's eye. Display devices with different pixel or subpixel sizes and pixel pitches can thus be realized with the same module. This would be advantageous in that such modules of structural elements can be manufactured independently of the target matrix, its carriers and its wiring.

[0034] The shallow mesa etch already disclosed is used for the formation of the pixel electrical contacts and modules and target matrix, which are etched in a grid, which can be combined with so-called deep etching to define the chip grid and modules. This chip grid can be different from the grid of the pixel chip, depending on the application. For example, a 2x2 large chip (four base units) with four subpixels can be manufactured for a display device. The base units are optoelectronic components or LEDs respectively. Similarly, by cleverly configuring the mask for the second mesa etch, pixels can be created, each with one less base unit. If these pixels are arranged side by side, a display is formed with a "hole" the size of the base unit unit or a multiple of it. Various sensors can then be stored under this "hole" or "missing subpixel". In combination, this allows for redundant subpixels, some of which are replaced by sensors.

[0035] For this purpose, it is appropriate to provide optoelectronic components or light-emitting diodes with a uniform chip architecture and a chip size that is the same or easily modifiable for display manufacturing. For this purpose, the techniques described herein can be used. For example, in manufacturing modules of the disclosed type, it is also possible to use the cover electrodes and surrounding structures disclosed herein to enhance the amount of light. In some embodiments, the module can then be further processed, for example by applying photovoltaic structures. However, it is also mentioned here that the module may be equipped with such structures at the time of its manufacturing process.

[0036] In some embodiments, the structural elements are grouped together in rectangular or square modules, which can also be combined in any way, in particular in rows. By manufacturing using shallow and deep etching, wafers can be prepared from such modules and singulated as required to the target matrix. In this way, modules of different sizes can be realized. In free positioning, certain places can be left free. Likewise, groups of cells or entire rows or columns can also be left free. Finally, these modules can be used to realize display devices or other applications in which the target matrix has a different arrangement of occupyable places, i.e. not in rows and columns, for example.

[0037] According to one configuration of the display device, at least one module may have four pixel elements arranged in two rows and two columns. Each pixel element may include one or more sub-pixels. In another configuration, one module may have four sub-pixel elements, also arranged in a 2x2 matrix. This is a manageable configuration. According to a further configuration, at least one module may have two rows and two columns, but only three structural elements. This is a manageable configuration, where the unoccupied locations are already reserved for modules.

[0038] In a further configuration of the display device, at least seven modules each having four pixel elements and at least two modules each having three pixel elements may be positioned and electrically connected in a target matrix on an end carrier to create at least two locations not occupied by pixel elements, at each of which at least one sensor element is positioned and electrically connected. Again, the modules may be arbitrarily configured and linked together or positioned together on the end carrier to create specific unoccupied locations. Again, the pixel elements may either include a number of sub-pixel elements and corresponding LEDs, or each pixel element may itself be an LED.

[0039] According to a further configuration, the locations occupied by the sensor elements may be surrounded by structural elements. In this way, well-defined locations, i.e. locations not occupied by structural elements, can be explicitly used for the sensor elements. In some embodiments, the modules can be made to be arranged in subpixels. Modules emitting in different colors can be provided on different second or replacement carriers.

[0040] According to various configurations, the sensor elements may be formed as part of a sensor arrangement formed on the first carrier or the end carrier for receiving electromagnetic radiation incident on the first side of the first carrier. In this way, different light spectrums can be detected depending on the application. According to further configurations, the sensor elements may be in the form of photodiodes, phototransistors, photoresistors, ambient light sensors, infrared sensors, ultraviolet sensors, proximity sensors or infrared structural elements. Similarly, the sensor may be a vital sensor for detecting a vital parameter. Thus, the display device can be used in various ways. For example, the vital sign may be body temperature.

[0041] In a further configuration, a vital signs monitoring sensor may be located within the display screen or behind the rear surface of the display screen, the sensor configured to measure one or more parameters of the user, including, in addition to body temperature, direction of gaze, pupil size, skin resistance, etc.

[0042] According to a further configuration, the structural element can have a first layer formed on the carrier, an active transition layer formed on the first layer, and a second layer formed on the active transition layer. The first contact is connected to a surface area of ​​the second layer not facing the carrier, and the second contact is connected to a surface area of ​​the first layer not facing the carrier. This configuration corresponds to a vertical LED. In this way, the structural element can be contacted only from one side. In another embodiment of this, the second contact is electrically insulated from the transition layer and the second layer by a dielectric and extends over the surface area of ​​the second layer not facing the carrier.

[0043] In the following, the invention will be explained in detail with reference to a number of drawings using configuration examples. [Brief description of the drawings]

[0044] [Figure 1] 1A-1C depict example configurations of proposed base modules for providing light emitting diode modules in accordance with some aspects of the proposed concept. [Diagram 2] FIG. 2 shows an example of the configuration shown in FIG. 1 on a replacement carrier according to a further embodiment. [Diagram 3] FIG. 3 is a diagram showing the example configuration shown in FIG. 2 in which a base module is further added. [Figure 4] FIG. 4 is a diagram showing the configuration example shown in FIG. 3 in which the contact points of the contacts are separated. [Diagram 5] FIG. 5 shows the configuration example shown in FIG. 4 in which the first contacts are in common contact. [Figure 6] FIG. 13 illustrates a further example configuration of a proposed base module for providing a light-emitting diode module having 2 rows by 2 columns of base modules in accordance with some aspects of the presented concepts. [Figure 7] 7A-7D show four cross-sectional views of two opposing base modules in two adjacent rows. [Figure 8]FIG. 13 shows a further example of a configuration of the proposed base module for providing a light-emitting diode module having 2 rows and 3 columns of base modules. [Figure 9] 9A-9D show four cross-sectional views of two opposing base modules in two adjacent rows. [Figure 10] FIG. 13 is a plan view of a matrix having grouped base modules to illustrate a further embodiment. [Figure 11] FIG. 13 is a plan view of a matrix having further groupings of base modules. [Figure 12] FIG. 13 is a plan view of a matrix with further possible groupings of base modules. [Figure 13] FIG. 13 is a plan view of a matrix with further possible groupings of base modules. [Figure 14A] 13A-13C are cross-sectional views illustrating further configurations of LED modules having additional photonic structures. [Figure 14B] FIG. 1 shows an example of how the proposed module can be lifted up by the transfer stamp described in the present application. [Figure 15] 1 shows some steps of one possible embodiment of the proposed method for manufacturing a module. [Figure 16] 11A-11C are schematic diagrams illustrating further methods of manufacturing a module according to some aspects of the proposed principles. [Figure 17A] 17A-17D illustrate some steps of the method shown in FIG. 16. [Figure 17B] 17A-17D depict further steps of the method presented in FIG. 16 to illustrate various aspects. [Figure 17C] FIG. 1 illustrates an arrangement of multiple generally planar target matrices. [Figure 17D] 1 illustrates schematic diagrams of various contact surfaces suitable for contacting the proposed LED module. [Figure 17E] FIG. 2 is a cross-sectional view of a display with contact areas and several modules. [Figure 18] FIG. 1 shows one possible implementation of the double transfer process using the proposed module.

[0045] Detailed Description The following configurations are primarily directed to display devices and displays, and thus to base units and modules made up of optoelectronic structural elements. However, the invention is not limited to this application or to the structural elements described. Rather, the principles and configurations presented here can be generalized to be suitable for many electronic uses and applications requiring scaling, i.e. the combination of identical structural elements.

[0046] FIG. 1 shows a modular architecture of optoelectronic components or components of the same type using LEDs. FIG. 1 shows the integration of various lateral LEDs in what is called a base module to provide an LED module. The base module comprises a layer stack having a first layer 3 formed on a carrier or exchange carrier 1, an active layer 7 formed on the first layer 3 and a second layer 5 formed on the active layer 7. A first contact 9 is applied to the surface area of ​​the second layer 5 not facing the carrier 1, and a second contact 11 is connected to the surface area of ​​the first layer 3 not facing the carrier 1. The second contact 11 is electrically insulated from the active layer 7 and the second layer 5 by a dielectric 10 and is formed to extend to the surface area of ​​the second layer 5 not facing the carrier 1.

[0047] During the production of the base module, the surface area of ​​the first layer 3 facing away from the carrier 1 has to be exposed after production of the layer stack, i.e. the second layer 5, the active layer 7 and parts of the first layer 3 are again removed in the edge areas of the layer stack.

[0048] This can be done, for example, by flank patterning of the at least one layer stack, in particular from the side of the second layer 5, in which a trench extending around the at least one layer stack is produced, in particular in the flank patterning region 13. This trench is also called a mesa trench. The flank of the layer stack is accordingly called a mesa flank. This patterning is done by means of a corresponding mask.

[0049] In the case of flank patterning, in particular the areas etched away by inductively coupled plasma ICP or reactive ion etching RIE, an insulating layer or dielectric 10 can subsequently be coated by chemical vapor deposition (chemical vapor deposition from the gas phase). As dielectric, SiO or ZnO is used. The second contact 11 may comprise ITO (indium tin oxide) and is made by sputtering or physical vapor deposition (physical vapor deposition from the gas phase).

[0050] In this way, a plurality of base modules are produced as a matrix along the XY plane, i.e. along at least one row and at least one column on the carrier 1. For this purpose, in the right edge region, in addition to the shallow flank patterning, a further deep flank patterning is also performed through the carrier 1 and the first layer 3. Region 15 corresponds to the deep flank patterning.

[0051] Deep flank patterning allows the detachment of one module from a matrix of multiple base modules onto the carrier 1. Deep flank patterning can be performed by etching, in particular chemical dry etching or plasma etching.

[0052] Figure 2 shows an example of a configuration in which the base module B according to figure 1 is arranged inverted on a further carrier or end carrier 2. The further carrier or end carrier 2 may be transparent for the light emitted by the optoelectronic component. Furthermore, material of the carrier 1 has been removed. This can be done, for example, by grinding off or by so-called laser lift-off (LLO). The base module B is thus arranged as a flip chip on the further carrier or end carrier 2 and is in contact there.

[0053] FIG. 3 shows the example of the configuration according to FIG. 2 with a further base module B with a flank area 15' free of the carrier 1. Both base modules B are oriented in opposite directions and have identical contacts, in particular the first contacts 9, arranged next to each other. Both base modules B can also be formed initially in two adjacent rows of a matrix on the carrier 1. After removing the carrier 1, the base modules B are arranged inverted on a further carrier or end carrier 2. Here, two adjacent base modules B oriented in the reaction direction relative to each other are produced as a common layer stack. In this case, the dashed line 17' in FIG. 3 corresponds to the surface area of ​​the second layer 5 in the middle of the two base modules. However, in order to prevent crosstalk, the intermediate layer 5 has been material removed by patterning. After such patterning, which also cuts through the active layer, the solid line 17 shows the surface area of ​​the first layer 3.

[0054] Figure 4 shows the example configuration according to Figure 3 with the contacts in separate contact. The first contact 9 and the second contact 11 are electrically connected separately to the corresponding contacts of the end carrier 2. The first contact 9 of each module is electrically bonded to the first contact 19 and the second contact 11 is electrically bonded to the second contact 21. The contacts 21 and 19 were made on the end carrier 2 in a previous step. The base module is then placed on the end carrier 2 and the electrical connections are made.

[0055] As with the previous configuration, here the central region is partially removed by additional patterning, or alternatively, that region may be left unremoved.

[0056] Figure 5 shows the example configuration according to figure 3 with the first contacts in common contact. The second contacts 11 are electrically and separately connected to the contacts of the end carrier 2. The first contacts 19 applied to the surface of the end carrier 2 are electrically connected to the two first contacts 9. The second contacts 21 are separately and electrically connected to the second contacts 11. As in the previous configuration, here too the central region is partially removed by additional patterning, or it may remain unremoved.

[0057] In principle, in Fig. 3 to Fig. 5, the first layer 3, the transition layer 7 and the second layer 5 can be completely removed as a result of deep flank patterning between two base modules B. The two base modules B can be contacted to a further carrier or end carrier 2 using flip-chip technology. The top diagram of Fig. 6 depicts a further example of the construction of a proposed base module B of a single LED to provide a module with 2 rows x 2 columns of base modules B shown in the bottom diagram. The base module B shown in the top diagram is provided here on a carrier 1, but can also be provided without a carrier. In this plan view, the first contact 9 and the second contact 11 are visible, as well as the first layer 3, the transition layer 7 and the second layer 5.

[0058] According to the lower diagram of FIG. 6, four base modules B are grouped into modules. This matrix, already on the carrier 1, may be selected in 2 rows by 2 columns in the XY plane. When manufacturing adjacent rows on the carrier 1, the base modules B of the rows may face the same direction. Here, the lower row has a base module B arranged in the opposite direction to the upper base module B. The modules shown in the lower diagram of FIG. 6 may still be arranged on the carrier 1, not shown, after shallow flank patterning. Subsequently, grouping into rectangular light-emitting diode modules is carried out by selecting the separation regions. These are separated by deep flank patterning along the rectangle surrounding the modules. The 2×2 (2 rows by 2 columns) modules obtained in this way have a width of, for example, about 400 micrometers and a length of about 600 micrometers.

[0059] 7A to 7D show four cross-sectional views of two opposing base modules B, which are arranged inverted, i.e. as flip chips, on a further carrier or end carrier 2. The base modules B can have a width of about 200 micrometers and a length of about 300 micrometers. Depending on the masking during the mesa etching, in particular for providing shallow flank patterning, precursors of structural element modules can be produced which can then be pulled off from the carrier, in particular the carrier 1, into or as light-emitting diode modules by means of particularly deep flank patterning. Reference number 10 denotes a dielectric.

[0060] According to FIG. 7A, two opposing single base modules B are arranged next to each other. The first contacts 9 of the base modules B are side by side but not in contact. The cross-sectional view according to FIG. 7A shows that a shallow flank patterning was led out from the side of the second layer 5. This results in shallow trenches extending around the periphery of the respective base module B or layer stack. A deep flank patterning was carried out from the side of the first layer 3 so that the individual base modules are separated. As a result, a number of base modules, which are still connected to each other, are first placed on an end carrier 2 and then separated from the side 3 by flank patterning. The original carrier 1 is removed.

[0061] According to FIG. 7B, two opposing single base modules B are likewise arranged next to each other. The first contacts 9 of said base modules B are side by side but not in contact. The cross-sectional view according to FIG. 7B shows that the shallow flank patterning of the layer stack has been performed from the side of the second layer 5. In contrast to FIG. 7A, the deep flank patterning of the layer stack has now also been performed from the side of the second layer 5, i.e. from the same side as the non-deep flank patterning. The original carrier 1 has been removed.

[0062] FIG. 7C shows an intermediate step. Two opposing base modules B are then arranged and fabricated in one piece with each other. The first contacts 9 of the base modules B are next to each other. A common layer stack of two adjacent opposing base modules is fabricated, in which the first layer 3, the transition layer 7 and the second layer 5 are fabricated as one unit along the end carrier 2. The cross-sectional view according to FIG. 7C likewise shows that a non-deep flank patterning of the layer stack has been performed from the side of the second layer 5, whereby only the edge regions of the two second contacts 11 have shallow flank patterning. The region between the two first contacts 9 is not flank patterned, i.e. the second layer 5 there remains untreated. After contacting, a deep flank patterning of the layer stack is performed from the side of the first layer 3 as in FIG. 7A and the modules are separated (not shown). The original carrier 1 has been removed.

[0063] According to D of FIG. 7, two opposing base modules B are arranged in a similar manner, which were produced in one piece with each other. The first contacts 9 of this base module B are next to each other. A common layer stack of two adjacent opposing base modules was produced, where the first layer 3 was produced as one unit along the end carrier 2. The cross-sectional view according to D of FIG. 7 shows that a shallow flank patterning of the layer stack was performed from the side of the second layer 5, whereby a shallow trench was produced around the respective base module B. In particular, the area between the two first contacts 9 was flank patterned, i.e. the second layer 5 and the transition layer 7 there and also part of the first layer 3 were removed there, as well as the edge area of ​​the second contact 11. The deep flank patterning of the layer stack was performed here from the side of the second layer 5 in the same way as in B of FIG. 7. Only a small web remains in the figure, which can be further separated if necessary.

[0064] 8 depicts a further example of the configuration of proposed base modules B for providing a structural element module having 2 rows and 3 columns (2×3) of base modules B shown in the lower figure. The base module B in the upper figure is provided here on a carrier 1, but may also be provided without a carrier. In this plan view, the first contact 9 and the second contact 11 can be seen, as well as the first layer 3, the transition layer 7 and the second layer 5.

[0065] According to the bottom diagram of FIG. 8, six base modules B are grouped into structural element modules. This matrix, already on the carrier 1, is selected in 2 rows by 3 columns in the XY plane. When manufacturing adjacent rows on the carrier 1, the base modules B of the rows face the same direction. Here, the lower row has a base module B arranged in the opposite direction to the upper base module B. The structural element modules shown in the bottom diagram of FIG. 8 can still be arranged on the carrier 1 after shallow flank patterning. By selecting the separation areas, the grouping into rectangular light-emitting diode modules shown in the bottom diagram is performed. This can be pulled apart along the rectangle surrounding the modules by deep flank patterning. The structural element modules thus obtained, 2×3 (2 rows by 3 columns in the XY plane), are approximately 500 micrometers wide and approximately 500 micrometers long. In this way, any combination of matrices can be pulled apart from the base modules and manufactured as modules.

[0066] 9A to 9D show four cross-sectional views of two opposing base modules B of a structural element module according to the depiction in the lower diagram of FIG.

[0067] Fig. 9C, in contrast to Fig. 7C, shows that the first contacts 9 are electrically connected and contacted by a common first contact 19 created on the end carrier 2. The second contacts 11 are individually electrically connected to second contacts 21 of the end carrier.

[0068] FIG. 9D, in contrast to FIG. 7D, shows that the first contacts 9 are individually electrically connected to the first contacts 19 of the end carrier 2, and the second contacts 11 are individually electrically joined to the second contacts 21.

[0069] FIG. 10 shows a plan view of a matrix with base modules B of a carrier (wafer or carrier 1) grouped in the XY plane. The base modules B are fabricated in the same orientation on the carrier (particularly carrier 1) from the beginning. No rotation or reorientation of the base modules B was performed. Each module thus constructed has here only one base module B in the Y direction, and therefore one row. In the X direction any number of base modules can be provided. In FIG. 10 the base modules B are grouped into four LED arrays or LED modules M.

[0070] 11 shows a plan view of a matrix with base modules B of a carrier (wafer or carrier 1) in a different grouping, where the base modules B of two adjacent rows are oriented in opposite directions by rotating the base modules B of one of these rows. The dotted lines represent the rectangles of modules M that are not yet singulated. FIG. 11 shows one or two rows of structural element modules M along the Y direction, with any number of columns in the X direction.

[0071] 12 shows a plan view of a carrier, in particular a carrier 1 or a wafer, with a matrix of base modules B in yet another grouping. This grouping produces a structural element module M in the form of a rectangular LED module having 3 rows and 5 columns in the XY plane. The LED module M thus has 15 base modules B, which are evenly distributed in a rectangle. The base modules B are equally spaced from one another in a row. Similarly, the rows are equally spaced from one another. Here, all base modules B have the same orientation.

[0072] FIG. 13 shows a plan view of a carrier, in particular a carrier 1 or a wafer, with a matrix with base modules B, in yet another grouping. This grouping creates rectangular LED modules M with 4 rows and 3 columns in the XY plane. The LED module M here thus has 12 base modules B, which are evenly distributed in the rectangle. The base modules B are arranged in a row at equal intervals from each other. The base modules B include two pairs of rows, in which the base modules B of both rows face in opposite directions and are arranged at equal intervals from each other. The distance between the rows of each pair may be different from the distance between each row of a pair of rows. In this way, a chip cluster of optoelectronic components or LEDs can be formed on the carrier 1 or on the wafer. As a result, a modular architecture is obtained, which can be used for various applications.

[0073] The manufactured modules M can be electrically contacted, for example using flip-chip technology, and can be integrated, for example, into a wall or panel of a display device or lighting unit. The base modules B can also be electrically connected in series or electrically connected in parallel.

[0074] FIG. 14A shows a configuration in which the structural element module is patterned on the light-emitting side after or already before the intermediate transfer step. In this case, periodically arranged holes are etched into the semiconductor layer on the light-emitting side, which can be called so-called negative pillars or columns. This results in a periodic change in the refractive index, since the refractive index of the surrounding semiconductor material is higher than that of the air-filled holes. In this configuration, the depth of the periodic structure extends almost into the active region, but at least on the order of the wavelength of the emitted light. In this configuration, the holes in the semiconductor material are not filled. However, it may be advantageous to fill them with materials having different refractive indices in order to obtain the desired optical properties on the one hand and a flat surface on the other hand.

[0075] The structural element modules are transferred onto the backplane after deep flank patterning and complete etching. In this case, the defined size of the structural elements of the combined base modules is particularly suitable, since this results in a deterministically defined spacing. Furthermore, it is possible to use a class of stamps to transfer modules of different sizes. FIG. 14B shows an example of such a transfer process using a stamp, as will be explained in more detail later in this specification. The stamp 20 has a number of pads 21 and 22 arranged at a deterministic spacing, each of which can receive surface tension or surface charge, as described herein. The spacing of the pads corresponds to the size of the individual base modules of each base module.

[0076] When a base module or a module made up of several base modules is to be removed from the composite and transferred, the stamp generates an electric potential on the side facing the module, which is then attached to the pads. The adhesion force here is determined by the charge or voltage of the pads. So, at this point, if the electrostatic force generated by the pads is sufficient, the transfer of larger modules is also possible.

[0077] FIG. 15 shows an example of one configuration of the proposed method for manufacturing such a structural element module, which may be formed, for example, from optoelectronic structural elements. In a first step S1, at least one layer stack is produced, which provides a base module. It has a first layer formed on a carrier 1, on which an active layer is applied and on which a second layer is applied. The active layer may comprise a quantum well or the like. In a second step S2, a surface area of ​​the first layer not facing the carrier 1 is exposed. Finally, in a third step, a first contact is applied to the surface area of ​​the second layer not facing the carrier 1. Furthermore, a second contact is produced on the exposed surface area of ​​the first layer not facing the carrier 1. The second contact is electrically insulated from the transition layer and the second layer by a dielectric and extends to the surface area of ​​the second layer not facing the carrier 1.

[0078] In this way, any number of base modules can be produced as a matrix on a wafer or carrier 1, the base modules can be grouped into combined LED modules, and these can then be singulated. Such modules with optoelectronic components preferably have a rectangular or square shape in the XY-plane of the matrix. In this shape, the base modules may be regularly arranged at equal intervals from one another in rows and columns. The base modules are produced and arranged along the matrix, preferably in a uniform distribution on the wafer, carrier or exchange carrier 1.

[0079] The manufacturing method shown here is very simplified. Rather, different techniques described here can be used. For example, each base module can have a current confinement by doping corresponding to a change in the band structure. Since the base modules are possibly singulated, it is advantageous to further change the band gap of the material system and the active layer at the possible predefined break point by measures such as quantum well intermixing. This reduces the non-radiative recombination at the possible edge defects, since the potential of the band structure is changed and the charge carriers are repelled. Furthermore, the manufactured modules can be surface patterned to improve the radiation pattern. It is therefore possible to apply photonic crystals or conversion layers to larger modules or modules of different colors. In addition, each LED module can have its own drive control, which is already implemented in the end carrier 2.

[0080] Another aspect concerns whether and to what extent such sub-units can be equipped with sensors. As mentioned above, the manufactured and grouped modules are transferred to a target matrix, for example a backplane. Figure 16 shows steps S1 to S5 of a proposed method for manufacturing such a sensored display device, made using the modules presented here. This method is merely exemplary and other devices can also be manufactured with this method.

[0081] In this way, a display device is produced using a generally planar target matrix of structural elements, in particular LEDs 5, arranged side by side in rows and columns on a first carrier 3 or on an end carrier. The optoelectronic structural elements themselves are part of a base module or an associated module.

[0082] In a first step S1, a number of structural elements, for example LEDs 5, are formed on a carrier or exchange carrier 17 of a start matrix 7. The spacing and size of the LEDs 5 in the start matrix 7 are in a certain, in particular integer, ratio to the spacing and size of the cavities of the subsequent target matrix 1 on the first carrier or end carrier 3. In particular, the wafer is prepared for deep mesa etching in order to obtain a modular structure. The individual LEDs subsequently form sub-pixels or pixels on the target matrix. In this respect, the start matrix 7 can coincide with at least a part of the target matrix 1. In this way, a group of structural elements 5 can be transferred from the exchange carrier 17 with respect to this part to the end carrier 3. The exchange carrier on which the LEDs are formed can therefore at least partially coincide with the end carrier with respect to the size and spacing of the LEDs.

[0083] In a second step S2, the LEDs 5 are grouped on the exchange carrier 17 to form a number of modules 9, in particular by deep mesa etching. In a step S3 following S2, the modules 9 thus patterned are lifted up from the exchange carrier 17, in particular by laser lift-off or a mechanical or chemical process, and then transferred as modules onto the end carrier 3 and thus onto the target matrix 1. The contact areas of the modules which contact the LEDs 5 are configured to correspond to the contact areas of the target matrix after transfer. In other words, for at least a partial area of ​​the end carrier 3 and thus the target matrix 1, the modules and the LEDs which have contact areas on the exchange carrier 17 are juxtaposed in rows and columns such that the distance between the LEDs 5 on the exchange carrier 17 is the same as the distance between the LEDs 5 on the target matrix 1 of the end carrier 3.

[0084] In a fourth step S4, the modules 9 are positioned and electrically connected on the primary end carrier 3 of the target matrix 1 in such a way that a large number of unoccupied locations 11 remain in this target matrix 1. For this purpose, the modules themselves may be configured unevenly, for example so that one module is missing. Alternatively, the modules may be transferred to the target matrix in such a way that some locations, for example rows or columns, remain free. In a fifth step S5, at least one sensor element 13 is positioned and electrically connected at least partially in each of the unoccupied locations 11.

[0085] FIG. 17A illustrates various aspects and differences between the individual structural elements, the module and the exchange carrier. The exchange carrier 17 comprises a sapphire substrate on which various semiconductor layers, including at least one active layer, have been deposited in the steps disclosed in the present application. On the exchange carrier 17, a starting matrix 7 of LEDs is created by shallow etching. The structural elements 5, e.g. LEDs 5, are still connected to each other and are individually addressable, since they only have areas electrically isolated from each other, caused by the shallow etching.

[0086] In one embodiment, a vertical LED is formed with a first contact facing the substrate and a second contact not facing the substrate. However, besides this configuration, it is also possible to produce flip-chip LEDs or structural elements in which the contacts are adjacent to each other on the same plane. In this example, the LED 5 is configured as a flip-chip, so that the two contacts do not face the substrate and are electrically insulated from each other. The LED 5 forms a cubic element. The LED 5 is a base element, for example with a width in the range of 100 μm×150 μm to 300 μm×450 μm. Other sizes or shapes are also possible, for example hexagonal shapes. On the left side of FIG. 17A, the structural element 5 is shown as a base unit.

[0087] By additional, now deep mesa etching (corresponding to the second step S2 of FIG. 16), the LEDs 5 are grouped into modules 9. In the middle of FIG. 17A, a starting matrix 7 of 12 structural elements 5 is produced by shallow etching on an exchange carrier 17, in which the LEDs 5 are arranged side by side in 4 rows and 3 columns along a common side 15. A thick border in the middle of FIG. 17A extends around the periphery of the thus-grouped modules 9, allowing the grouping of several structural elements 5. In this way, two modules 9a are produced, each grouping three LEDs 5. Furthermore, two modules 9b with two LEDs are produced, as well as two modules 9c with one LED.

[0088] FIG. 17B shows the modules and the LEDs after they have been transferred to the end carrier 3. A total of six columns and rows can be seen on the end carrier 3, although their number can of course be chosen arbitrarily. The arrangement of the modules is chosen so that there is no distance between the modules, i.e. the structural elements are close to each other. However, modules are also chosen that do not fit completely into this matrix. For example, a 2×2 module could completely cover the end carrier shown here. However, the two modules are not arranged as a 2×2 matrix, but as a 2×1 matrix, i.e. they have only three LEDs, so that one place 11 remains free. Thus, in the case of the above-mentioned type of positioning, two places 11 remain free, and these positions will depend on the arrangement of the respective modules. Of the two free positions, the left one has a sensor element 13 placed in it. In the configuration shown, only one place is already occupied. However, in some configurations, the sensor element may consist of two or more individual elements, which are then divided into the unoccupied places.

[0089] Thus, FIG. 17B shows a number of LEDs 5 grouped together in the form of modules 9 and arranged on an end carrier 3. In this way, one generally planar target matrix 1 is implemented. In the case of a display device such as a display or video wall, the modules 9 are formed and grouped together as sub-pixels. For this, three differently colored modules 9 are used, red, green and blue, juxtaposed so that together as sub-pixels they generate a pixel (picture element). The picture elements are then arranged in rows and columns along the target matrix 1. By using redundant LEDs, sensor elements can also be positioned in some places instead of redundant sub-pixels.

[0090] FIG. 17C shows an arrangement of multiple generally planar target matrices 1. In contrast to FIG. 17B, multiple generally planar individual target matrices 1 are used, each of which may also have multiple modules 9 as described in FIG. 17B. For clarity of the illustration of FIG. 17C, each individual generally planar target matrix 1 has only two rows and two columns. The target matrices 1 here have uniformly equal sizes within the area. Alternatively, the target matrices 1 may create areas of different sizes. In this way, the display device can be flexibly adapted to the respective application.

[0091] Thus, in the top left target matrix 1, the modules 9 cover all the occupyable locations of the target matrix 1. To the right, only one module 9 with one structural element 5 is formed in the target matrix 1, leaving three locations 11 free. Below, two structural elements 5 form a module 9, leaving two locations 11 free. In the bottom left target matrix 1, a module 9 consisting of three structural elements 5 is positioned, leaving only one location 11 free. The unoccupied locations 11 may, for example, be at least partially formed with sensor elements 13. Of the four target matrices 1 mentioned above, three target matrices 1 may each have a structural element 5 of the color red, green and blue, which together form a picture element. This picture element may be repeated vertically or horizontally along the first carrier or end carrier 3 to provide a display function. Since a uniform emission of the subpixels is essentially desired, it is preferable to implement the same modules 9 for each color subpixel. Alternatively, the fourth target matrix 1 may be configured in such a way that it is completely filled with sensor elements 13.

[0092] The distances a and c, which represent the respective distances of the target matrices 1 of the rows, and the exemplarily distance b, which represents the distance of the target matrices 1 of the columns, can be selected depending on the desired resolution of the display. This also applies to the distance to the edges of the first or end carrier 3. The distances a and b, or a and c, or b and c, or a, b and c, can be the same. Similarly, the distances a, b and c can be integer multiples of the spatial extent of the structural elements 5 or the mutual spacing of the structural elements 5.

[0093] FIG. 17D illustrates different contact options for electrically contacting LED modules on a backplane or other substrate. M1 shows a contact panel M1 with two areas KB1 and KB2, especially suitable for two separate base modules. The base modules can be placed on the surface either alone or in combination. The contact panel M1' has a larger contact area KB3. This allows placing an LED module consisting of two consecutive base modules with shallow mesa etching and driving and controlling them together. The panel M1'' is provided with a contact area for only one base module, just like the panel M1'. The panel M2 shows an LED module placed on top of the contact area. The panel M1'' shows an area where a common terminal is provided.

[0094] FIG. 17E shows a section of a partially populated flat surface or plane to illustrate some aspects in this regard. As mentioned above, LEDs can be manufactured in an array of rows and columns. This allows the implementation of several LED modules and modules of different colors. This is shown in FIG. 17E. The section shows a red module rM seen from above. It is manufactured in a 6×1 module according to the proposed principle and is applied and contacted on the plane. The red module is adjacent to a blue module bM, which is shown in a kind of cross-section to illustrate the various contacts. The commonly connected contacts are marked with K. The term "common" in this context should be understood as these contacts having the same potential as at least some other adjacent contacts. The plane is therefore applied with a common contact area AB4. As shown in the figure, the contact area AB4 is always in contact with the contacts K of several base modules. Further contacts Kb serve to drive and control each base module individually. Therefore, in order to be able to drive and control four base modules individually, a total of five contact areas must be formed on the sheet surface. Thus, as shown, LED modules of different colors can also use a shared contact area.

[0095] Finally, Fig. 18 shows yet another embodiment of the transfer process. The periodic arrangement and organization of the LED modules in the base module allows the LED modules to be singulated in a desired manner and then transferred by the dual transfer process presented in this application. Fig. 18 shows a transfer arrangement structure 20 with two pads 22 whose size corresponds to the spacing of the base modules.

Claims

1. 1. A method for manufacturing a module of LEDs, comprising the steps of: - producing at least one layer stack on a carrier, the layer stack providing a base module, the layer stack having a first layer, an active layer applied on the first layer, and a second layer formed on the active layer; exposing a surface area of ​​the first layer not facing the carrier; forming a first contact on a surface area of ​​the second layer not facing the carrier; forming a second contact on a surface area of ​​the first layer not facing the carrier; A method comprising:

2. forming the second contact, forming an electrically insulating dielectric material overlying the active layer and a portion of the second layer; forming the second contact from a conductive material that is in electrical contact with an opposing surface region of the first layer and that extends through the dielectric to a surface region of the second layer that does not face the carrier; The method of claim 1 , comprising:

3. 3. The method according to claim 1 or 2, comprising a step of exposing a surface area of ​​the first layer not facing the carrier by shallow flank patterning of the at least one layer stack, in particular from the side of the second layer, and in particular creating a shallow trench extending around the periphery of the respective layer stack.

4. The method according to any one of claims 1 to 3, wherein the method comprises the step of fabricating a plurality of base modules as a matrix along at least one row and at least one column on an XY plane, with the base modules in each row being oriented in the same direction.

5. The base modules of two adjacent rows are oriented in the same direction, or the base modules of two adjacent rows are oriented in opposite directions, so that contacts of the same polarity, in particular the first contacts, are arranged next to each other; The method of claim 4.

6. The method of claim 5 , wherein the method includes the step of fabricating a common layer stack of two adjacent, oppositely oriented base modules.

7. The method further comprising: Grouping a plurality of base modules into at least one LED module, in particular a rectangular or square LED module along an XY plane, in particular in the case of a plurality of rows, each row having the same columns occupied by base modules; and forming at least one LED module from a plurality of base modules by deep flank patterning through the first layer, in particular from the side of the second layer; The method according to any one of claims 1 to 6, further comprising at least one of:

8. The method according to claim 1 , wherein the base module is arranged on a separate carrier, different from the first contact and the second contact, which are exposed during deep patterning of the flank portion.

9. The method further comprising: detaching the base module or the LED module from the carrier by laser lift-off; Detaching the base module or the LED module from the carrier by mechanical means. The method according to any one of claims 1 to 8, further comprising at least one of:

10. The method comprises the step of contacting the contacts of the LED module to a replacement carrier or end carrier, in particular by means of flip-chip technology.

10. The method of claim 1, comprising:

11. The method of claim 10 , further comprising creating a common contact area for contacts of base modules of adjacent oppositely oriented LED modules.

12. the first layer is n-doped and the second layer is p-doped, the active layer being adapted to emit, in particular, blue or green light; and / or the first layer being p-doped and the second layer being n-doped, the active layer being adapted to emit light in particular in the red; 12. The method according to any one of claims 1 to 11.

13. said at least one layer stack being produced by epitaxy; and / or The exposing and / or grouping is carried out by etching; 13. The method according to any one of claims 1 to 12.

14. The method further comprises: generating quantum well intermixing in a region of said active layer extending adjacent to said deep flank patterning; The method according to any one of claims 1 to 13, comprising:

15. 1. An LED module having at least one layer stack providing a base module, the layer stack comprising a first layer, an active layer and a second layer formed on a carrier, wherein a first contact is formed in or on a surface area of ​​the second layer that does not face the carrier, and a second contact is formed in or on a surface area of ​​the first layer that does not face the carrier, the first contact and the second contact being spaced apart from each other.

16. 16. The LED module according to claim 15, wherein a light output surface is formed on a side of the layer stack facing away from the first and second contacts.

17. 16. The LED module of claim 15, wherein the second contact is electrically insulated from the transition layer and the second layer by a dielectric and is formed to extend over a surface area of ​​the second layer that does not face the carrier.

18. 20. The LED module of claim 17, wherein the LED module includes a plurality of base modules arranged in a matrix having at least one row and at least one column.

19. 20. The LED module of claim 18, wherein adjacent LEDs in the LED module are separated by deep flank patterning.

20. 20. The LED module of claim 19, wherein a region of the active layer extending adjacent to a deep flank patterning has an enhanced band structure, in particular produced by quantum well intermixing.

21. 21. The LED module according to claim 15, wherein the base modules of two adjacent rows are oriented in opposite directions such that contacts of the same polarity, in particular first contacts, are arranged next to each other.

22. 22. The module according to any one of claims 15 to 21, wherein the module, in particular a light emitting diode module, is produced by a method according to any one of claims 1 to 14.

23. 1. An LED display module, comprising: a generally planar target matrix formed on a first carrier, the target matrix having rows and columns of LEDs at occupiable locations; 23. One or more LED modules according to any one of claims 15 to 22, comprising one or more base modules, the size of which corresponds to the occupyable space; In an LED display module having The LED modules are positioned and electrically connected to the first carrier in such a way that a number of locations remain in the target matrix that are not occupied by base modules, and at least one sensor element is positioned and electrically connected at least partially in each of the locations. An LED display module comprising:

24. 24. The LED display module of claim 23, further comprising a plurality of generally planar target matrices of the same or different sizes formed on the first carrier along rows and columns each having spaced apart locations that the target matrices can occupy.

25. 25. The LED display module of claim 23 or 24, wherein the base modules form a rectangle on a matrix plane, and any number of base modules adjacent to each other along a common side are grouped to form an LED module.

26. 26. The LED display module of any one of claims 23 to 25, wherein at least one LED module comprises four base modules in two rows and two columns.

27. 27. The LED display module of any one of claims 23 to 26, wherein at least one LED module comprises three base modules in two rows and two columns.

28. 28. An LED display module as claimed in any one of claims 23 to 27, in which at least seven LED modules, each having four base modules, and at least two LED modules, each having three base modules, are thus positioned on the target matrix and electrically connected.

29. 30. The LED display module of claim 28, wherein at least two locations not occupied by the base module are created, and at least one sensor element is positioned and electrically connected to each of said locations.

30. 30. The LED display module of claim 29, wherein a base module surrounds the space occupied by the sensor element.

31. 31. The LED display module of claim 23, wherein the base module is configured to emit electromagnetic radiation from a first side of the first carrier.

32. 32. The LED display module according to any one of claims 23 to 31, wherein the LED module comprises a base module formed as a sub-pixel.

33. 33. An LED display module according to any one of claims 23 to 32, wherein the locations of the target matrix are formed as sub-pixels of a pixel.

34. 34. An LED display module as claimed in any one of claims 23 to 33, wherein a plurality of sensor elements are formed as part of a sensor arrangement formed on the first carrier for receiving electromagnetic radiation incident on a first surface of the first carrier.

35. 35. The LED display module according to claim 23, wherein at least one sensor element is configured as a vital signs monitoring sensor.

36. 36. The LED display module of claim 35, wherein the vital signs monitoring sensor is positioned within a display screen or behind a rear surface of a display screen, the vital signs monitoring sensor configured to measure one or more vital signs parameters of a user who places a body part against a front major surface of the display screen over the vital signs monitoring sensor.

37. a base module is formed from a first layer formed on a second carrier, an active transition layer formed on the first layer, and a second layer formed on the active transition layer, where a first contact is connected to a surface area of ​​the second layer not facing the second carrier, and a second contact is connected to a surface area of ​​the first layer not facing the second carrier, 37. An LED display module according to any one of claims 23 to 36.

38. 38. The LED display module of claim 37, wherein the second contact is electrically insulated from the transition layer and the second layer by a dielectric and is formed to extend over a surface area of ​​the second layer that does not face the second carrier.

39. 39. An LED display module according to any one of claims 23 to 38, wherein each sensor element is formed in the form of a photodiode, or in the form of a phototransistor, or in the form of a photoresistor, or in the form of an ambient light sensor, or in the form of an infrared sensor, or in the form of an ultraviolet sensor, or in the form of a proximity sensor, or in the form of an infrared structural element.

40. 1. A method of manufacturing an LED display module having rows and columns of a generally planar target matrix having locations occupyable by base modules formed on a first carrier, the method comprising: A method in which a plurality of base modules on a second carrier are formed in a starting matrix having equal distances from the positions that the base modules can occupy with respect to a target matrix, in particular by shallow mesa etching, and are then grouped at that point into a plurality of LED modules, in particular by deep mesa etching, which LED modules are separated from the second carrier, in particular by laser lift-off or by mechanical or chemical processes, The LED modules are positioned and electrically connected on the first carrier in such a way that a number of locations not occupied by base modules remain in the target matrix, and at least one sensor element is positioned and electrically connected at least partially in the locations, respectively. A method comprising:

41. 41. The method of claim 40, wherein a plurality of generally planar target matrices of the same or different sizes formed on the first carrier are formed along rows and columns each having a location that the target matrices can occupy spaced apart from one another.

42. 42. The method of claim 40 or 41, wherein the base modules form a rectangle on a matrix plane, and any number of base modules are grouped adjacent to each other along a common side to form an LED module.

43. 43. The method according to any one of claims 40 to 42, wherein four base modules are grouped in two rows and two columns to form the at least one LED module.

44. 44. The method according to any one of claims 40 to 43, wherein three base modules are grouped in 2 rows and 2 columns to form the at least one LED module.

45. 45. The method according to claim 40, wherein at least seven LED modules, each having four base modules, and at least two LED modules, each having three base modules, are positioned and electrically connected on the target matrix so as to create at least two locations not occupied by base modules, and at least one sensor element is positioned and electrically connected in each of the locations.

46. 46. ​​The method according to any one of claims 40 to 45, wherein the space occupied by the sensor element is enclosed in a base module.

47. 47. The method of any one of claims 40 to 46, wherein the base module is configured to emit electromagnetic radiation from a first side of the first carrier.

48. 48. The method of any one of claims 40 to 47, wherein a plurality of sensor elements are formed as part of a sensor device formed on the first carrier for receiving electromagnetic radiation incident on a first side of the first carrier.

49. 49. The method according to any one of claims 40 to 48, wherein one sensor element is formed as a vital signs monitoring sensor.

50. 50. The method of claim 49, wherein the vital signs monitoring sensor is positioned within a display screen or behind a rear surface of a display screen, the vital signs monitoring sensor configured to measure one or more vital signs parameters of a user who places a part of their body against a front major surface of the display screen over the vital signs monitoring sensor.

51. 51. The method of claim 40, wherein a base module is formed from a first layer formed on a second carrier, an active transition layer formed on the first layer, and a second layer formed on the active transition layer, wherein a first contact is connected to a surface area of ​​the second layer that does not face the carrier, and a second contact is connected to a surface area of ​​the first layer that does not face the second carrier.

52. 52. The method of claim 51, wherein the second contact is electrically insulated from the transition layer and the second layer by a dielectric and is formed to extend onto a surface region of the second layer that does not face the second carrier.

53. 53. The method according to any one of claims 40 to 52, wherein the sensor element is formed in the form of a photodiode, or in the form of a phototransistor, or in the form of a photoresistor, or in the form of an ambient light sensor, or in the form of an infrared sensor, or in the form of an ultraviolet sensor, or in the form of a proximity sensor, or in the form of an infrared structural element, respectively.

Images