Electronic apparatus

Abstract

To provide a robust electronic apparatus; or to provide a highly reliable electronic apparatus; or to provide a novel electronic apparatus.SOLUTION: An electronic apparatus has a first plate, a second plate, a display unit having flexibility, and an electricity storage device having flexibility. The first plate and second plate are arranged to face each other; the display unit and electricity storage device are sandwiched between the first plate and second plate; the display unit has a first face facing the electricity storage device; the first face has a first area not fixed to the electricity storage device; the first area overlaps a display area included in the display unit.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Electronic device, display device, light-emitting device, power storage device, driving method thereof, or manufacturing method thereof Regarding the law.

[0002] In this specification, electronic equipment refers to any device that operates when power is supplied. Electronic devices having a power source, electronic devices having, for example, a storage battery as a power source, and electro-optical devices In addition, electronic devices include information terminal devices that store information. It should be noted that one aspect of the present invention is not limited to the above technical fields. The technical field of one embodiment of the invention disclosed in the specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one aspect of the present invention is a process, a machine, a manufacture, or It is about composition of matter. The technical field of one embodiment of the present invention disclosed in this specification includes semiconductor devices, display devices, and liquid crystal displays. display device, light-emitting device, lighting device, power storage device, storage device, imaging device, driving method thereof, The following manufacturing methods can be mentioned as examples. [Background technology]

[0003] In recent years, display devices that are worn on the human body, such as head-mounted displays, have been proposed. These are called head-mounted displays or wearable displays. There is a demand for lighter and smaller electronic devices used in daily life, such as hearing aids.

[0004] In addition, as electronic devices become lighter, the batteries they contain also need to become lighter and smaller. Modelling is required.

[0005] In addition, an electronic book terminal equipped with a flexible display device is disclosed in Patent Document 1 and Patent Document 2. As shown. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2010-282181 [Patent Document 2] Patent Publication No. 2010-282183 Summary of the Invention [Problem to be solved by the invention]

[0007] In order to make the display device worn on the human body more comfortable for the user, it is necessary to reduce its weight. Furthermore, there is a demand for smaller size and lighter weight of the entire electronic device, including the display device drive unit and power supply. It is necessary to make this a reality.

[0008] In addition, the display device that is worn on the human body and the electronic device having the display device are portable. It is required that the material be durable and easy to bend.

[0009] In addition, a display device that is worn on the human body and an electronic device having the display device are Repeated insertion and removal of the device may result in bending or other external forces being applied to the device, resulting in damage to the display and exterior parts. In addition, built-in power storage devices may be destroyed.

[0010] An object of one embodiment of the present invention is to provide a durable electronic device. An object of one embodiment of the present invention is to provide an electronic device with high reliability. An object of one embodiment is to provide a novel electronic device.

[0011] Another object of one embodiment of the present invention is to provide a durable display device. An object of one embodiment of the present invention is to provide a highly reliable display device. An object of one embodiment of the present invention is to provide a novel display device.

[0012] Another aspect of the present invention is to provide an electronic device that is worn on the body when used. Another embodiment of the present invention is to provide an electronic device that is worn on a wrist. This is one of the challenges.

[0013] Another object of one embodiment of the present invention is to provide a display device that is worn on the body. Another embodiment of the present invention is to provide a display device that is worn on the arm. This is one of the challenges.

[0014] Another embodiment of the present invention is to provide a power storage device that is attached to a part of a body. Another object of the present invention is to provide a power storage device that is worn on an arm. One of the challenges we face is to

[0015] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. Other issues can be extracted from the drawings, claims, etc. [Means for solving the problem]

[0016] One embodiment of the present invention is a display device including a first plate, a second plate, a flexible display unit, and a flexible The first plate and the second plate are disposed so as to face each other, and the display unit The power storage device is sandwiched between a first plate and a second plate, and the display unit is disposed on the first surface facing the power storage device. The first surface has a first region that is not fixed to the power storage device, and the first region is a display unit. The display area of ​​the display device is overlapped with that of the other display device.

[0017] Alternatively, one embodiment of the present invention is a display device including a first plate, a second plate, a flexible display portion, and a flexible The first plate and the second plate are disposed so as to face each other. The display unit and the power storage device are sandwiched between the first plate and the second plate, and between the display unit and the power storage device It is an electronic device that has space inside.

[0018] Alternatively, one embodiment of the present invention is a display device including a first plate, a second plate, a flexible display portion, and a flexible the display unit has a flexible circuit board; The first plate and the second plate are positioned to face each other, and the display unit and the power storage device are disposed on the first plate. The display unit is sandwiched between the first plate and the second plate, and the display unit is fixed to the first plate via an adhesive layer. At least a portion of the first plate is in contact with the second plate, and the storage device has an area floating from the first plate. It is equipment.

[0019] Alternatively, one embodiment of the present invention is a display device including a first plate, a second plate, a flexible display portion, and a flexible The first plate and the second plate are disposed so as to face each other. The display unit and the power storage device are sandwiched between the first plate and the second plate, and between the display unit and the power storage device The electronic device has a shock absorbing component.

[0020] In the above configuration, it is preferable that the electronic device be worn on the user's arm in contact with the second plate. .

[0021] In the above configuration, the display unit has a first end and a second end. has a third end and a fourth end, the first end and the third end are fixed, and the second It is preferable that the distance between the end and the fourth end changes with deformation of the electronic device.

[0022] Alternatively, one aspect of the present invention is a flexible first housing and a flexible second housing. a display unit having flexibility, and a power storage device having flexibility; The display unit is located inside the first housing, and the display unit has a first surface having The power storage device is an electronic device located inside the second housing. In the electronic device, it is preferable that the electronic device be worn on the arm of a user in contact with the second housing. Effect of the Invention

[0023] According to one embodiment of the present invention, a robust electronic device can be provided. In this manner, a highly reliable electronic device can be provided. Thus, a novel electronic device can be provided.

[0024] According to one embodiment of the present invention, a robust display device can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided. This makes it possible to provide a novel display device.

[0025] According to another aspect of the present invention, there is provided an electronic device that is worn on a part of the body. According to another aspect of the present invention, an electronic device that is worn on the arm and used can be provided. can be done.

[0026] According to another embodiment of the present invention, there is provided a power storage device that is attached to a part of the body when used. According to one embodiment of the present invention, a power storage device that is worn on an arm can be provided. can be done.

[0027] Alternatively, according to one aspect of the present invention, a display device that is worn on the body when used can be provided. According to one embodiment of the present invention, a display device that is worn on the arm can be provided. can.

[0028] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. The above will become apparent from the description in the specification, drawings, claims, etc. It is possible to extract other effects from the descriptions in the claims, etc. [Brief description of the drawings]

[0029] [Figure 1] 1A and 1B are perspective views illustrating electronic devices according to one embodiment of the present invention. [Diagram 2] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Diagram 3] 1A and 1B are a perspective view and a cross-sectional view illustrating an electronic device of one embodiment of the present invention. [Figure 4] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Diagram 5] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Figure 6] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Figure 7] 1A to 1C are diagrams illustrating electronic devices according to one embodiment of the present invention. [Figure 8] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Figure 9] 1A and 1B are cross-sectional views illustrating electronic devices according to one embodiment of the present invention. [Figure 10]FIG. 1 is a diagram showing the appearance of a thin storage battery. [Figure 11] FIG. [Figure 12] FIG. 1 is a perspective view illustrating an electronic device according to one embodiment of the present invention. [Figure 13] 1A to 1C are diagrams illustrating a method for manufacturing a thin storage battery. [Figure 14] 1A to 1C are diagrams illustrating a method for manufacturing a thin storage battery. [Figure 15] FIG. 1 is a diagram showing the appearance of a thin storage battery. [Figure 16] FIG. 4 is a diagram for explaining the radius of curvature of a surface. [Figure 17] FIG. 2 is a diagram for explaining the radius of curvature of a film. [Figure 18] FIG. 1 is a diagram illustrating a coin-type storage battery. [Figure 19] FIG. [Figure 20] FIG. [Figure 21] FIG. [Figure 22] FIG. [Diagram 23] FIG. [Figure 24] FIG. [Diagram 25] FIG. [Figure 26] 1A to 1C are diagrams illustrating electronic devices according to one embodiment of the present invention. [Figure 27] FIG. 1 is a schematic cross-sectional view for explaining a film formation principle. [Figure 28] FIG. 1 illustrates a configuration of a film formation apparatus according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0030] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following description, and it is understood by those skilled in the art that various modifications may be made to the modes and details thereof. The present invention is not limited to the description of the following embodiments. It is not something that is done.

[0031] In this specification, a connector, such as an FPC (F lexible printed circuit) or TCP (Tape Car The module has a printed wiring board (PCB) attached to the TCP. or a COG (Chip On Glass) on a substrate on which a display element is formed. The module on which IC (integrated circuit) is directly mounted using the "Glass" method is included in the display device. It may be possible to get pregnant.

[0032] In addition, in this specification, "parallel" means that two straight lines are at an angle of -10° or more and 10° or less. Therefore, it includes the case where the angle is between -5° and 5°. "Approximately parallel" refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less. "Perpendicular" means that two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, it includes the case where the angle is between 85° and 95°. refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.

[0033] In this specification, when the crystal is a trigonal or rhombohedral crystal, it is represented as a hexagonal crystal system. vinegar.

[0034] The electronic device of one embodiment of the present invention can be a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, or a lighting device. It is preferable that the imaging device includes a power storage device, a storage device, an imaging device, etc.

[0035] (Embodiment 1) In this embodiment, an example of electronic device 100 that can be worn on a part of the body is shown.

[0036] <Example of 100 electronic devices> FIG. 1 shows an example of a perspective view of an electronic device 100. As shown in FIG.

[0037] The electronic device 100 shown in FIG. 1 includes a display unit 102, a board 112, and at least one of the board 112. The power storage device 103 has a plate 112 having a large radius of curvature. In the electronic device 100 shown in FIG. The device 103 and the display unit 102 are arranged so that they at least partially overlap each other. Such an arrangement allows for greater freedom in the internal layout.

[0038] Moreover, the display unit 102 preferably has a circuit board 104. The power storage device 103 may include a circuit board 107. The circuit board 107 includes a power storage device 103 and a It is preferable that the circuit board 107 is electrically connected to the display unit 104. The circuit board 107 may include a driving circuit for driving the power storage device 102. It is preferable that a converter circuit for supplying power from the display unit 102 is provided. The combination of the display panel 102 and the circuit board 107 may be referred to as a display module.

[0039] Moreover, the electronic device 100 preferably has a board 111. In the case where the plate 111 has a fastener 131, the plate 111 and the plate 112 may be fixed to each other by a fastener 131. Here, the fastener 131 may be in the form of a band as shown in FIG. For example, screw holes are provided in the plates 111 and 112, and a screw-shaped fastener 131 is used to fasten the plates 111 and 112 together. It may be fixed.

[0040] Alternatively, the plates 111 and 112 may be fixed by caulking. 00 is a method of forming holes in the plates 111 and 112, inserting the fasteners 131 into the holes, and then fastening the fasteners 131. The fastener 131 may be fixed by deforming (crimping). For example, rivets or the like can be used.

[0041] The fastener 131 may be made of a material such as metal, ceramics, or resin. It is preferable to use a metal that is resistant to rust by forming a passive state. For example, For example, stainless steel, magnesium, aluminum, titanium, etc. can be used.

[0042] 2A shows a cross-sectional view of the electronic device 100 shown in FIG. FIG. 2(B) shows a cross section including AB and approximately perpendicular to the cross section of FIG. 2(A). For clarity, FIG. 2(B) is shown on a larger scale compared to FIG. 2(A).

[0043] The display unit 102 preferably has a display element 152 and a circuit unit 153 on a plate 151. Here, the circuit section 153 preferably has a drive circuit for driving the display element 152. It is preferable that the circuit board 104 is connected to the circuit section 153 and the like. 104 may include a drive circuit for driving the display element 152 .

[0044] Here, the display area of ​​the display unit 102 is, for example, an area in which the display element 152 is provided. It may also refer to the area on which images, text information, etc. are displayed in the electronic device 100. For example, the area where the display element 152 is provided may be, for example, the plate 111. a light shielding plate is provided on the front or back surface of the display device to shield a part of the area where the display element is provided from light, In the example shown in FIG. 1, a display element 152 is provided. The area in which the display elements are provided is generally rectangular, but the area in which the display elements are provided is not limited to a rectangular shape.

[0045] Moreover, it is preferable that the plate 151 has flexibility. For example, the display unit 102 may be flexible.

[0046] The plate 151 may be, for example, a plastic substrate. The plate may be attached to a plate or the like. By using the plate 151 having flexibility, The display device can be flexible. The display device can be curved by being flexible. It is possible to attach it to any shape, and it can be used for a wide variety of purposes. By using a flexible plate 151 such as a plastic substrate, the display device can be made thinner and In addition, the flexible plate 151, such as a plastic substrate, can be used. The display device used is less likely to break, and for example, durability against impact when dropped can be improved. do.

[0047] Here, the electronic device 100 can be worn on the arm or the like of a human body. For example, when the device is worn on the arm of a human body, the plate 112 comes into contact with the part where the device is worn.

[0048] The plate 112 is preferably shaped to fit the arm, for example. The robot may be attached to the arm of a robot or the like. Examples include accompanying robots, humanoid robots, etc.

[0049] Also, the plate 112 is preferably rounded. The plate 112 may have a curved surface and a flat surface. In addition, it is preferable that the plate 112 has a shape that follows the side surface of an elliptical cylinder, for example. For example, arch shapes, C-shaped shapes, oval shapes, etc. Or it may have a shape like an ellipse with a part cut off. The shape of the device improves the ease of wearing it on the arm and other parts of the body. It also fits the shape of the arm. The electronic device 100 can cover the arm. The plate 112 has a cross-sectional shape along three sides of a rectangle. The shape may be the same as that of the first embodiment.

[0050] The plate 112 may have a shape conforming to, for example, a cylindrical body. The plate 112 may have a shape along a cone, pyramid, or the like. The shape may be as follows.

[0051] Also, it is preferable that the plate 112 has a function of being attached to a cylindrical body. Examples of shapes include columns, cones, and cylinders whose side faces change direction continuously. do.

[0052] In addition, when the electronic device 100 is worn on the arm of a human body, an external force is applied to the electronic device 100. For example, when mounting the plate 11 in the direction of the arrow 105 shown in FIG. The mounting property can be improved by deforming the plate 112. It is preferable that the fluorine-containing polymer has such a property.

[0053] In addition, as the plate 112 deforms, other parts of the electronic device 100 may also deform. Therefore, it may be preferable that other parts of the electronic device 100 also have flexibility. For example, it is preferable that the display unit 102 is flexible. The plate 111 is preferably made of a film or the like. This is also fine.

[0054] When an external force is applied to the electronic device 100, the electronic device 100 is deformed. As the power storage device 103 changes shape, the power storage device 103 changes shape.

[0055] Here, the amount of change in deformation of the power storage device 103 due to an external force applied to the electronic device 100 is It is preferable that the force be maintained while the force is being applied. For example, when the electronic device 100 is attached to the arm, It is preferable that the change in deformation of the power storage device 103 caused by the change in the deformation is maintained while the power storage device 103 is being worn. Since the amount of change in deformation of the power storage device 103 is maintained, the amount of change in deformation of the power storage device 103 is smaller. It is suitable for mounting on an electronic device 100 having a radius of curvature. 00. In addition, by maintaining the amount of change in the power storage device 103, the electronic device 1 The shape of the 00 can adapt to the area where it is worn.

[0056] For example, if the elasticity of the power storage device 103 is large, the electronic device 100 may deform. Accordingly, the power storage device 103 is temporarily deformed, but may then try to return to its original shape. In other words, the amount of change in the deformation of the power storage device 103 from the shape before the deformation decreases over time. When the power storage device 103 tries to return to its original shape, for example, Distortion may occur in other parts of the device 100.

[0057] The electronic device 100 may also have a sealing portion 121 as shown in FIG. FIG. 2C shows an example in which a sealing portion 121 is provided in the electronic device 100 shown in FIG. By providing the plate 111, the plate 112, and the sealing portion 121, a housing is formed. In addition, the plates 111 and 112 may be deformed by an external force. In this case, the sealing portion 121 reduces deformation due to an external force and maintains the overall structure of the electronic device 100. It is possible to do so.

[0058] The sealing portion 121 can be made of, for example, a resin. For example, an elastomer can be used as the resin. - can be used.

[0059] FIG. 2(D) shows another example in which the electronic device 100 has a sealing portion 121. The cross section of the electronic device 100 shown in FIG. 2(D) is different from that shown in FIG. 2(B) in that the shape of the plate 111 is different. The difference is that the sealing portion 121 is provided. The plate 111 has an end surface bent in an L-shape. The device has a housing that is made up of a bent plate 111, a sealing portion 121, and a plate 112.

[0060] The sum of the thickness of the display element 152 and the plate 151 of the display unit 102 is preferably 1 μm or less. The thickness is preferably 1 mm or less, more preferably 5 μm or more and 200 μm or less. The thickness of the display element is, for example, 50 μm or more and 30 mm or less, and is thicker than the thickness of the display element. There is.

[0061] When an external force is applied to objects of different thicknesses, the way each object bends in response to the external force Specifically, the degree of change in the radius of curvature may differ. The degree of deformation refers to, for example, the amount of change in deformation due to the application of an external force, the change in the amount of change over time, and This refers to the speed of response to changes, etc.

[0062] Therefore, in the area where two objects of different thickness are fixed to each other, when an external force is applied, If the two objects are stuck together, they may distort, leading to cracks and breakage. A defined region is, for example, a region where the surfaces of two objects are in contact and bonded together. Refers to...

[0063] Here, when the electronic device 100 is worn on the arm or the like, an external force is applied to the electronic device 100, which may cause deformation. In such a case, the display unit 102 and the power storage device 103 are fixed to each other. It is preferred to have an undefined region.

[0064] Therefore, it is preferable to provide a space between the power storage device 103 and the display unit 102. Alternatively, a material that can be deformed or flow is provided between the power storage device 103 and the display unit 102. For example, the display may include a liquid such as water or a gel-like substance. It is preferable that the display element 102 has an area that is not attached to the power storage device 103. It is preferable that the area having the display unit 10 is not attached to the power storage device 103. 2 preferably has a region that is spaced apart from the power storage device 103. This can improve the reliability of the display unit 102 and the power storage device 103. With such a configuration, it is possible to suppress the occurrence of distortion in the display unit 102 and the power storage device 103. In addition, by adopting such a configuration, the display unit 102 and the power storage device 10 3 can be prevented from cracking or breaking.

[0065] Alternatively, the power storage device 103 and the display unit 102 have surfaces that are in contact with each other, and It is preferable that the surfaces that are to be joined are slippery.

[0066] Alternatively, the display unit 102 has a first surface facing the power storage device 103. It is preferable to have a first area that is not fixed to the device 103. Also, the first area is It is preferable that the display element 152 of the display unit 102 overlaps with the display element 152 .

[0067] It is preferable that the display unit 102 and the power storage device 103 have a first region that is not fixed. The display unit 102 and the power storage device 103 are provided with a first region that is not fixed and a second region that is fixed at one or more positions. For example, the display unit 102 and the power storage device 10 may have two or more fixed areas. 3 may be fixed at one point on the end, or at two or more points on the end and another area. The display unit 102 and the power storage device 103 may be fixed to each other using, for example, an adhesive layer. Alternatively, the display unit 102 and the power storage device 103 may be made of a material such as a buffer material or a porous material. The fixing may be performed via a fixing member such as a fixing member 140 or a fixing member 160.

[0068] Alternatively, as shown in FIG. 2A, the display unit 102 has an end portion 171 and an end portion 172. The power storage device 103 has an end 173 and an end 174. The end 171 and the end 173 are connected to a circuit board. It is preferred that ends 172 and 174 are fixed to plate 107 and are not fixed to each other.

[0069] Alternatively, the power storage device 103 and the display unit 102 are in contact with each other, and the surfaces in contact with each other are It is preferable that the surface is slippery.

[0070] By making the surfaces of the power storage device 103 and the display unit 102 in contact with each other slippery, Therefore, an external force applied to either the power storage device 103 or the display unit 102 is not easily transmitted to the other. By reducing the effect of external forces on each other, deformation such as distortion can be prevented. It is possible.

[0071] In addition, the exterior body of the power storage device 103 and the filter on which the display element is provided in the display unit 102 In such a case, the power storage device 103 and the The display unit 102 is different from the display unit 101 in the way it bends in response to an external force, specifically, the degree of change in the radius of curvature. There may be cases where the way the material bends in response to an external force, specifically the degree of change in the radius of curvature, is different. In this case, distortion occurs in either the exterior body of the power storage device 103 or the display unit 102, or both. In particular, since the display unit 102 is thin, it can be said that it is more susceptible to distortion.

[0072] In addition, when the electronic device 100 is dropped or hit by an object, etc., the electronic device 100 Impact may be applied to each part of the device.

[0073] In such a case, by providing a space between the power storage device 103 and the display unit 102, This allows the device to absorb shock, thereby reducing the impact caused by external forces. As an example, consider a case where the electronic device 100 collides with an object, and the plate 111 comes into contact with the object. In such a case, the impact received by the plate 111 is transmitted to the electricity storage device 103 and the circuit board 107. is not transmitted directly, and the impact can be weakened.

[0074] For example, a flexible circuit board can be used as the circuit board 104. As a circuit board having such a structure, there is a flexible resin film on which wiring is provided, called an FPC (flexible printed circuit board). Flexible Printed Circuit (FPC) is used. By using an FPC as the circuit board 104, the electronic device 100 When the electronic device 100 is deformed, for example, For example, the connection between the circuit board 104 and the circuit section 153, etc., and the connection between the circuit board 104 and the circuit board 107 At the connection portion, the occurrence of cracks and breakage in the circuit board 104 and the like can be suppressed.

[0075] Here, in the electronic device 100, at least a part of the display unit 102 is in contact with the plate 111. Alternatively, in the electronic device 100, between the display unit 102 and the plate 111, An adhesive layer or a layer having a touch sensor may be provided. Alternatively, an adhesive sheet may be attached to the plate 111, and the display unit 102 may be attached to the adhesive sheet. In addition, the plate 111 may have a touch sensor. When the display unit 102 is in contact with the inner surface of the display device, the display unit 102 has flexibility, so that the shape of the display unit 102 can be changed. In addition, it is easy to match the shape of the plate 111 to the shape of the inner surface of the plate 111. Even when the display unit 102 is rotated, deterioration or damage to the display unit 102 can be prevented.

[0076] The surfaces of the plates 111 and 112 are preferably curved. Preferably, 112 has a cross section, for example, in the shape of a circle or a circular arc.

[0077] Alternatively, the plate 111 and the plate 112 may be changed in cross-sectional shape when the electronic device 100 is attached or detached. In this case, it is preferable that the area having a large radius of curvature is hardly deformed and the end portion is bent. For example, arched, C-shaped, elliptical or oval. It is preferable that the shape of the slit is a rounded shape. This improves the ease of wearing the device on the arm or other parts of the body. For example, when wearing the device on the arm, the shape of the arm can be adjusted The electronic device 100 can cover the arm in accordance with the user's arm. may have a rectangular shape, for example, a U-shape.

[0078] At least a part of the plate 111 is preferably transparent. Glass, quartz, plastic, flexible plate, resin laminated film, fibrous Examples of glass include barium borate and glass-based paper and substrate films. Examples include boron oxide glass, aluminoborosilicate glass, and soda lime glass. Examples of substrates, laminated films, and base films include the following: For example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN ), polyethersulfone (PES), polytetrafluoroethylene (PTFE) Alternatively, for example, there is a synthetic resin such as acrylic. Alternatively, for example, polypropylene, polyester, polyvinyl fluoride, or poly Examples include polyamide (aramid, etc.), polyimide, etc. Examples include inorganic, epoxy, or inorganic vapor deposition films.

[0079] The plate 111 has a first region having light transmitting properties and a second region having semi-transmitting properties or light blocking properties. In the example of the electronic device 100 shown in FIG. 3A, the plate 111 may have: It has a region 164 having light-transmitting properties and a region 165 having light-blocking properties.

[0080] The plate 112 may be made of the material shown in the plate 111. Stainless steel, stainless steel foil, tungsten, tungsten You can also use plates with ten foil, paper, or semiconductors (such as single crystal or silicon) good.

[0081] Also, the plate 112 may be made of a material having a higher rigidity than the plate 111. For example, The plate 112 may be made of a stainless steel material. In order to prevent the battery 102 and the power storage device 103 from warping too much or from being significantly twisted, In addition, the deformation when worn on the arm is constant, i.e., bending in one direction, which is reliable. This leads to improved reliability.

[0082] As shown in FIG. 2(A) and FIG. 2(B), the ends of the plates 111 and 112 are rounded. The roundness may improve the fit of the device when worn.

[0083] FIG. 3B shows an enlarged view of the area C surrounded by the dashed line in FIG. 2A. The end of the plate 151 of the power storage device 103 is not fixed to the end of the power storage device 103. When the device 100 is worn on the arm or the like, the plate 112 deforms in the direction of the arrow 105 shown in FIG. At this time, the end of the plate 151 and the power storage device 100 are deformed. Since the ends of the plate 151 and the storage device 103 are not fixed to each other, Distance 163 may change as electronic device 100 is deformed.

[0084] On the other hand, when the display unit 102 and the power storage device 103 are fixed, the distance 163 is electronically In some cases, the plate 151 may not change due to deformation of the device 100. For example, When the ends of the display unit 102 and the power storage device 103 are fixed to each other, damage to the display unit 102 or the power storage device 103 may occur. Except for cases where the electronic device 100 is broken or where it expands or contracts due to temperature, the electronic device 100 is not deformed. However, the distance 163 does not change.

[0085] As shown in FIG. 4, the electronic device 100 has a display unit 102 and a power storage device 103. 4 is different from FIG. 1 in that the plate 113 is provided.

[0086] By providing a plate 113 between the power storage device 103 and the display unit 102, 03 or the display unit 102, the external force applied to either one of them is less likely to be transmitted to the other. I wish.

[0087] The plate 113 can be made of the material shown for the plate 112. For example, a flexible plate, a laminated film using a resin, a base film, etc. may be used. stomach.

[0088] FIG. 4A shows a cross section of the electronic device 100, and FIG. 4B shows a dot-and-dash cross section of the electronic device 100 shown in FIG. FIG. 4(C) shows a cross section passing through line AB and approximately perpendicular to the cross section of FIG. 4(A). 4(C) shows an enlarged view of the area D surrounded by a dashed line. As shown in FIG. 4(C), the plate 113 is a display unit. It has opposing first surfaces, and the first surfaces have an area 161 that overlaps with the display element 152 .

[0089] For example, the plate 113 has a first surface facing the plate 151 of the display unit 102, The first surface may have an area 161 that faces the display element 152 via the plate 151 .

[0090] Here, let us consider a case where the area 161 is fixed to the display unit 102. In this case, the plate 11 In FIG. 3, an area 162 on the back side of an area 161 includes a plate 112, a power storage device 103, etc. The electronic device 100 is fixed to other parts thereof except the display unit 102 and the plate 111. Here, it is preferable that the fixing is not performed by gluing or fastening with a screw or the like. This refers to being fixed in place using a tool.

[0091] Alternatively, for example, the area 162 may be a part of the electronic device 100 such as the power storage device 103 or the board 112. When the display unit 102 and the plate 111 are fixed to the other parts, the area It is preferable that 161 is not fixed to the display unit 102 .

[0092] Alternatively, the plate 113 may be fixed to neither the display unit 102 nor the power storage device 103. stomach.

[0093] The plate 113 has an area that is not fixed to the display unit 102 and one or more areas that are fixed to the display unit 102. For example, the display unit 102 and the power storage device 103 may be connected via a plate 113. may have a region where it is fixed.

[0094] In the cross section shown in FIG. 4C, the region 161 faces the center of the display unit 102. In one example, the region 161 may be present throughout the region overlapping with the display element 152 .

[0095] Alternatively, the plate 113 and the electricity storage device 103 have surfaces that are in contact with each other and are in contact with each other. It is preferable that the surfaces are slippery. Alternatively, the plate 113 and the display unit 102 are not in contact with each other. It is preferable that the surfaces contacting each other are slippery. "Thin" means, for example, that the coefficient of friction is small. "Slippery" means, for example, that the surface is easily slippery. This means that the convexity is small.

[0096] A buffer material may be used as the plate 113. Here, the buffer material may be, for example, a material having air bubbles. FIG. 5 shows a plate 113 made of so-called air bubble cushion material. Alternatively, the plate 113 may be made of a porous material.

[0097] FIG. 6 shows an example in which the electronic device 100 has two housings. 6(A) shows a cross section of the device 100, and FIG. 6(B) shows a cross section of the portion indicated by the dashed line AB in FIG. 6(A). FIG. 6 shows an electronic device 100 including a plate 111, a plate 112, and a sealing portion 121 as a first housing. and a housing 126 shown in FIG. 6 as a second housing. The electronic device 100 has a display unit 102 and a circuit board 107 inside a first housing. The housing 126 also includes a power storage device 103 therein.

[0098] The housing 126 is preferably flexible. The housing 126 is an integral Alternatively, two or more parts may be fixed together with screws or the like to form a housing. The body 126 can be made of, for example, the same material as the sealing portion 121 .

[0099] The housing 126 is fixed to the first housing near its end by, for example, a fastener 131. In the example shown in FIG. 6, the housing 126 is attached near the end of the plate 112 by a fastener 131. It is fixed to the side.

[0100] It is preferable that at least a portion of the housing 126 contacts one surface of the plate 112. The housing 126 may be glued to one side of the plate 112 .

[0101] Alternatively, the housing 126 may have a first region that is fixed to the first housing and a second region that is not fixed. The bending of the plate 112 and the housing 126 in response to an external force, specifically, In the case where the degree of change in the radius of curvature is different, it is possible to have a second region that is not fixed. This makes it possible to reduce the influence of external forces in that region.

[0102] The housing 126 may have a space between it and the plate 112 of the first housing.

[0103] <Example of wearing electronic device 100> 7A and 7B show examples of how the electronic device 100 is worn. FIG. 7A shows a case where the electronic device 100 is worn on the arm (wrist). FIG. 7(B) shows an example in which the electronic device 100 is worn on the upper part of the arm. FIG. 7C shows an example of the electronic device 100 that is a armband-type device.

[0104] The electronic device 100 may be attached to a part of the body other than the arm, such as a leg or a finger. The electronic device 100 may be fixed to an arm, a leg, or the like, using a belt or the like. Depending on the size of the part of the body where the electronic device is worn, for example, the thickness of the arm, the electronic device 100 may be worn around the arm or more. For example, in the cross section shown in FIG. 2(A), the plate 1 is located closer to the outer circumference of the cross section of the arm. When the plate 12 is long, the plate 112 may overlap twice in the remaining area. In this region, the plate 112 may have a region in contact with the surface of the plate 111. .

[0105] In addition, the electronic device 100 has a display area that is long in the direction along the arm as shown in FIG. In FIG. 26, the length of the display area of ​​the electronic device 100 in the direction along the arm is The width of the arm is set to be at least 1 time, preferably at least 1.5 times, so that the electronic device The device 100 can have a wider display area. If the length of the device is less than one time the cross-sectional width of the arm, the device will be lighter and easier to wear. It can be set to 100.

[0106] <Modifications of the Electronic Device 100> In addition, as an example of an electronic device 100 shown in FIG. 8A, a display unit 102 and a power storage device 103 8A is different from FIG. 2 in that the power storage device 103 is disposed adjacent to the display portion 102. The difference is that the power storage device 103 and the display unit 102 are provided side by side. This allows the electronic device 100 to be made thinner. This may be the case.

[0107] In addition, as in the example of the electronic device 100 shown in FIG. 8B, the cross sections of the plate 111 and the plate 112 are It may have a ring shape.

[0108] As an example of the electronic device 100 shown in FIG. 9, the electronic device 100 includes a power storage device 103 and The power storage device 103 may have flexibility. As the power storage device 103, for example, a thin power storage device using a laminate film for its exterior body is used. A battery can be used. The power storage device 106 does not have to be flexible. The power storage device 106 may have a different shape from the power storage device 103. Coin-type (or button-type) batteries, square batteries, cylindrical batteries, etc. are used. For example, when the electronic device 100 has a memory, the power storage device 106 can store data. The power storage device 106 can be used as a storage battery for storing data. The coin-type battery can be used as a spare battery for the power device 103. Please refer to embodiment 3.

[0109] The electronic device 100 shown in FIG. 1 to FIG. 9 has a cross section of the plate 112 with a radius of curvature of 1 0 mm or more, and more preferably 5 mm or more. In order to make the device 100 in a shape that is easy to wear on the arm, for example, the cross section of the plate 112 is formed with a curvature The radius is preferably 20 mm or more, and more preferably 15 mm or more.

[0110] In addition, the electronic device 100 is preferably shaped to enclose more than half of the cross section of the arm. It is.

[0111] <Electricity storage device> The power storage device 103 preferably has a curved shape. This allows the storage device 103 to be provided in an area of ​​the plate 111 with a large radius of curvature. The power storage device 103 is preferably flexible. The film is thin and flexible, and is applied to the curved surface of the plate 111 in the area with a large radius of curvature. In addition, when an external force is applied to the electronic device 100, for example, For example, when the electronic device 100 is worn on the arm, the deformation of the plate 112 is followed by the deformation of the plate 112. It is possible.

[0112] Here, the power storage device 103 can be a secondary battery, a capacitor, or the like.

[0113] As the secondary battery, a lithium ion secondary battery can be used. Other alkali metals (e.g., sodium, potassium, etc.) and alkaline earth metals (e.g., Calcium, strontium, barium, beryllium, magnesium, etc.) In addition, as a secondary battery, an air secondary battery, which uses oxygen in the air as an active material, may be used. As the air secondary battery, for example, a lithium-air battery may be used.

[0114] The capacitor may be an electric double layer capacitor. A redox capacitor can be used as the capacitor. Hybrid capacitors such as silicon ion capacitors may also be used.

[0115] In this embodiment, the flexible power storage device 103 is an exterior body made of a film. An example of using a thin secondary battery is shown in FIG. 10. 11A and 11B are cross sections taken along dashed lines A1-A2 and B1-B2 in FIG. 10, respectively. and shown in FIG.

[0116] The thin secondary battery includes a sheet-shaped positive electrode 203, a sheet-shaped negative electrode 206, and a separator 207. 07, an electrolyte 208, an exterior body 209 made of a film, and a positive electrode lead electrode 510, The positive electrode 203 and the negative electrode 204 are provided in the exterior body 209. A separator 207 is provided between the battery 201 and the battery 6. The exterior body 209 contains an electrolyte 208. The positive electrode 203 has a positive electrode current collector 201 and a positive electrode active material layer 202. The negative electrode 206 includes a negative electrode current collector 204 and a negative electrode active material layer 205 .

[0117] FIG. 19 shows another example of a cross section taken along the dashed line A1-A2 in FIG. In the example shown, the positive electrode 203 has a positive electrode active material layer 202 on only one side of the positive electrode current collector 201. Similarly, the negative electrode 206 has a negative electrode active material layer 205 on only one side of the negative electrode current collector 204. Here is an example:

[0118] The material of the positive electrode current collector 201 and the negative electrode current collector 204 may be stainless steel, gold, platinum, zinc, or the like. Metals such as lead, iron, nickel, copper, aluminum, titanium, tantalum, and their alloys For example, a material that is highly conductive and does not alloy with carrier ions such as lithium can be used. In addition, the heat resistance of silicon, titanium, neodymium, scandium, molybdenum, etc. has been improved. Aluminum alloys containing elements that react with silicon can be used. Alternatively, the insulating layer may be formed of a metal element that reacts with silicon to form a silicide. The metal elements that form the alloy include zirconium, titanium, hafnium, vanadium, niobium, Tantalum, chromium, molybdenum, tungsten, cobalt, nickel, etc. Positive electrode current collector The body 201 and the negative electrode current collector 204 may be in the form of a foil, a plate (sheet), a mesh, a cylinder, or a coil. The positive electrode may be in the form of a punched metal, an expanded metal, or the like. The current collector 201 and the negative electrode current collector 204 have a thickness of 10 μm or more and 30 μm or less. It would be good to do so.

[0119] The positive electrode active material layer 202 is made of a material capable of inserting and desorbing carrier ions, for example. As the carrier ion, lithium or other alkali metal ions ( For example, sodium ions and potassium ions) and alkaline earth metal ions (e.g., Calcium ion, strontium ion, barium ion, beryllium ion, magnesium ion Sium ions, etc.) can be used.

[0120] As a material capable of inserting and extracting lithium ions, for example, olivine type Lithium-containing materials having a crystal structure, a layered rock-salt type crystal structure, or a spinel type crystal structure Positive electrode active materials include, for example, LiFeO2, LiCoO2, LiNiO2, and Li Compounds such as iMn2O4, V2O5, Cr2O5, MnO2, etc. can be used.

[0121] Or lithium-containing complex phosphate (general formula LiMPO4 (M is Fe(II), Mn( The general formula LiM Representative examples of PO4 include LiFePO4, LiNiPO4, LiCoPO4, and LiMn PO4, LiFe a Ni b PO4, LiFe a Co b PO4, LiFe a Mn b PO4, LiNi a Co b PO4, LiNi a Mn b PO4(a+b is less than 1, 0 <a<1、0< b<1), LiFe c Ni d Co e PO4, LiFe c Ni d Mn e PO4, LiNi c Co d Mn ePO4 (where c + d + e is less than or equal to 1, 0 < c < 1, 0 < d < 1, 0 < e < 1), L iFe f Ni g Co h Mn i PO4 (where f + g + h + i is less than or equal to 1, 0 < f < 1 , 0 < g < 1, 0 < h < 1, 0 < i < 1), etc.

[0122] In particular, LiFePO4 satisfies well the requirements for a cathode active material, such as the presence of lithium ions that can be extracted during initial oxidation (charging), safety, stability, high capacity density, and high potential. Therefore, it is preferable.

[0123] Examples of lithium-containing materials having a layered rock salt-type crystal structure include lithium cobaltate (LiCoO2), LiNiO2, LiMnO2, and Li2MnO3. . Also, NiCo-based materials such as LiNi 0.8 Co 0.2 O2 (general formula: LiNi x Co 1- x O2 (0 < x < 1)), NiMn-based materials such as LiNi 0.5 Mn 0.5 O2 (general formula: L iNi x Mn 1-x O2 (0 < x < 1)), and NiMnCo-based materials such as LiNi 1 / 3 Mn 1 / 3 Co 1 / 3 O2, etc. (also referred to as NMC. General formula: LiNi x Mn y Co 1-x-y O2 ( x > 0, y > 0, x + y < 1)) exist. Furthermore, there are Li(Ni 0.8 Co 0.15 Al0 .05 )O2, Li2MnO3 - LiMO2 (M = Co, Ni, Mn), etc.

[0124] ​Examples of lithium-containing materials having a spinel-type crystal structure include LiMn2O4, Li 1+x Mn 2-x O4, LiMn 2-x Al x O4(0 <x<2)、LiMn 1.5 Ni 0.5 There are O4 and so on.

[0125] Lithium-containing materials with spinel-type crystal structure containing manganese, such as LiMn2O4, , a small amount of lithium nickel oxide (LiNiO2 or LiNi 1-x M x O2 (M = Co, Al Mixing it with other materials has the advantage of suppressing the elution of manganese and the decomposition of the electrolyte. This is more preferable.

[0126] In addition, the positive electrode active material is a compound having the general formula Li (2-j) MSiO4 (M is Fe(II), M Lithium-containing materials such as one or more of n(II), Co(II), and Ni(II), where 0≦j≦2 The general formula Li (2-j) A typical example of MSiO4 is Li (2- j) FeSiO4, Li (2-j) NiSiO4, Li (2-j) CoSiO4, Li ( 2-j) MnSiO4, Li (2-j) Fe k Ni l SiO4, Li (2-j) Fe k C o l SiO4, Li (2-j) Fe k Mn l SiO4, Li (2-j) Ni k Co l S O4, Li (2-j) Ni k Mnl SiO4 (where k + l is 1 or less, 0 < k < 1, 0 < l < 1 ), Li (2-j) Fe m Ni n Co q SiO4, Li (2-j) Fe m Ni n Mn q S iO4, Li (2-j) Ni m Co n Mn q SiO4 (where m + n + q is 1 or less, 0 < m < 1 , 0 < n < 1, 0 < q < 1), Li (2-j) Fe r Ni s Co t Mn u SiO4 (r + where s + t + u is 1 or less, 0 < r < 1, 0 < s < 1, 0 < t < 1, 0 < u < 1) and other lithium compounds can be used as materials.

[0127] Also, as the positive electrode active material, A x M2(XO4)3 (A = Li, Na, Mg, M = Fe, Mn, Ti, V, Nb, Al, X = S, P, Mo, W, As, Si) represented by the general formula NASICON-type compounds can be used. Examples of NASICON-type compounds include Fe2(MnO4 )3, Fe2(SO4)3, Li3Fe2(PO4)3, etc. Also, as the positive electrode active material there are compounds represented by the general formula Li2MPO4F, Li2MP2O7, Li5MO4 (M = Fe, Mn), perovskite-type fluorides such as NaF3, FeF3, metal chalcogenides (sulfides, selenides, tellurides) such as TiS2, MoS 2, materials having a reverse spinel-type crystal structure such as LiMVO4, vanadium oxide-based (V2O5, V6O , LiV 3O8, etc.), manganese oxides, organic sulfur compounds, and other materials can be used. 13 , LiV 3O8, etc.), manganese oxides, organic sulfur compounds, and other materials can be used.

[0128] In addition, a sodium-containing material may be used as the positive electrode active material. For example, NaMnO 4, NaNiO2, NaCoO2, NaFeO2, NaNi 0.5 Mn 0.5 O2, Na CrO2, NaFeO2, etc. Also, Na2FePO4F, Na2VPO4 F, fluorophosphates such as Na2MnPO4F, Na2CoPO4F, and Na2NiPO4F Also, borates such as NaFeBO4 and Na3Fe2(BO4)3 can be used. can be used.

[0129] Furthermore, a material obtained by adding a rare earth element to these materials may be used as the positive electrode active material. The elements are Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. One or more of these elements are added. The positive electrode active material can be used.

[0130] In addition to the above-mentioned positive electrode active material, the positive electrode active material layer 202 contains a material for improving the adhesion of the active material. and a conductive assistant for increasing the conductivity of the positive electrode active material layer 202. This is also fine.

[0131] The negative electrode active material layer 205 is made of a material capable of dissolving and precipitating a metal that becomes a carrier ion. Alternatively, a material capable of inserting and removing carrier ions can be used. For example, lithium The carrier ions are selected from the group consisting of nickel metals, carbon-based materials, and alloy-based materials. Metals include lithium and other alkali metals (e.g., sodium and potassium), aluminium, Alkaline earth metals (e.g., calcium, strontium, barium, beryllium, magnesium Examples include sodium.

[0132] Lithium metal has a low redox potential (-3.045 V vs. the standard hydrogen electrode) and is lightweight. and high specific capacity per volume (3860mAh / g and 2062mAh / cm 3 ), so it is preferable.

[0133] Carbon-based materials include graphite, graphitizable carbon (soft carbon), and non-graphitizable carbon (hard carbon). Examples include graphene, carbon black, carbon nanotubes, graphene, etc.

[0134] Graphite includes mesocarbon microbeads (MCMB), coke-based artificial graphite, and pitted graphite. These include artificial graphite such as titanium-based artificial graphite, and natural graphite such as spheroidized natural graphite.

[0135] Graphite is formed when lithium ions are inserted into graphite (lithium-graphite intercalation compound is formed) It has a low potential similar to that of lithium metal (0.3 V or less vs. Li / Li + ).this This allows the lithium-ion secondary battery to exhibit a high operating voltage. Relatively high capacity per unit volume, small volume expansion, inexpensive, and compared to lithium metal Therefore, it is preferable since it has an advantage of being highly safe.

[0136] In addition, an alloy-based material can also be used as the negative electrode active material. It is possible to carry out charge and discharge reactions by alloying and dealloying reactions with metals that become carrier ions. When the carrier ion is lithium ion, the alloy material is, for example, , Mg, Ca, Al, Si, Ge, Sn, Pb, Sb, As, Bi, Ag, Au, Zn, Materials containing at least one of Cd, Hg, and In can be used. Such elements have a large capacity compared to carbon, and silicon in particular has a theoretical capacity of 4200mAh / g Therefore, it is preferable to use silicon as the negative electrode active material. Among the compounds using such elements, those that form bonds with lithium and undergo charge-discharge reactions Materials that can be used for this purpose are also called alloy materials. For example, SiO, Mg2Si, Mg2Ge, SnO, SnO2, Mg2Sn, SnS2, V2Sn3, FeSn2, Co Sn2, Ni3Sn2, Cu6Sn5, Ag3Sn, Ag3Sb, Ni2MnSb, Ce Sb3, LaSn3, La3Co2Sn7, CoSb3, InSb, SbSn, etc. can be.

[0137] In addition, titanium dioxide (TiO2) and lithium titanium oxide (Li4 Ti5O 12 ), lithium-graphite intercalation compound (Li x C6), niobium pentoxide (Nb2O5 ), tungsten oxide (WO2), molybdenum oxide (MoO2), etc. can be done.

[0138] In addition, the negative electrode active material is a composite nitride of lithium and transition metals, which has a Li3N structure. Li 3-x M x N (M=Co, Ni, Cu) can be used. For example, Li 2. 6Co 0.4 N3 has a large charge / discharge capacity (900mAh / g, 1890mAh / cm 3 )of This is preferable.

[0139] When a composite nitride of lithium and transition metals is used, the negative electrode active material contains lithium ions, In addition, materials that do not contain lithium ions, such as V2O5 and Cr3O8, are used as the positive electrode active material. In addition, when a material containing lithium ions is used as the positive electrode active material, However, by first removing the lithium ions from the positive electrode active material, As the nitride, a complex nitride of lithium and a transition metal can be used.

[0140] In addition, a material that undergoes a conversion reaction can be used as the negative electrode active material. For example, lithium oxide such as cobalt oxide (CoO), nickel oxide (NiO), and iron oxide (FeO) A transition metal oxide that does not form an alloy with the metal may be used as the negative electrode active material. Further materials that cause this include Fe2O3, CuO, Cu2O, RuO2, and Cr2O3. Oxides such as CoS 0.89 , NiS, CuS and other sulfides, Zn3N2, Cu3N, Ge Nitrides such as 3N4, phosphides such as NiP2, FeP2, CoP3, FeF3, BiF3, etc. This also occurs with the fluorides listed above. However, because the potential of the above fluorides is high, they are not used as positive electrode active materials. Good too.

[0141] In addition to the above-mentioned negative electrode active material, the negative electrode active material layer 205 contains a material for improving the adhesion of the active material. and a conductive assistant for increasing the conductivity of the negative electrode active material layer 205. This is also fine.

[0142] The electrolyte 208 is capable of moving carrier ions as an electrolyte. The electrolyte is a material that contains lithium ions as carrier ions. are LiPF6, LiClO4, Li(FSO2)2N, LiAsF6, LiBF4, L Lithium such as iCF3SO3, Li(CF3SO2)2N, Li(C2F5SO2)2N, etc. These electrolytes may be used alone or in any combination of two or more. In order to make the reaction product more stable, vinylene may be added to the electrolyte. A small amount (1 wt%) of carbonate (VC) may be added to reduce the decomposition of the electrolyte. For example, electrolytes containing sodium ions include NaPF6, NaN(SO2CF 3)2, NaClO4, NaBF4, CF3SO3Na, NaAsF6, etc. may be used. stomach.

[0143] The solvent of the electrolyte 208 is a material that allows the movement of carrier ions. The solvent for the solution is preferably an aprotic organic solvent. Representative examples of aprotic organic solvents Examples include ethylene carbonate (EC), propylene carbonate, and dimethyl carbonate. diethyl carbonate (DEC), γ-butyrolactone, acetonitrile, dimeth- These include ethane, tetrahydrofuran, etc., and one or more of these can be used. In addition, by using a polymer material that gels as a solvent for the electrolyte, the electrolyte is less susceptible to leakage. This improves safety. It also makes it possible to make the storage battery thinner and lighter. Representative examples of materials are silicone gel, acrylic gel, acrylonitrile gel, and polyethylene gel. Styrene oxide gel, polypropylene oxide gel, fluorine polymer gel, etc. In addition, ionic liquids (room-temperature molten salts) that are flame-retardant and non-volatile are used as the solvent for the electrolyte. ) is used to prevent the internal temperature of the battery from rising due to an internal short circuit or overcharging. Even if the temperature rises, it can prevent the battery from exploding or catching fire.

[0144] The separator 207 can be made of an insulating material. For example, cellulose (paper) Alternatively, a polymer with holes, such as polypropylene or polypropylene, can be used. For example, polyethylene can be used.

[0145] A secondary battery is made of a thin, flexible film (e.g., a laminate film) as an exterior body. A laminate film is a laminated film made of a base film and an adhesive synthetic resin film. It refers to a laminated film of two or more types. The base film is PET or PB. Polyesters such as T, polyamides such as nylon 6 and nylon 66, and inorganic deposition films As the adhesive synthetic resin film, polyethylene, polypropylene, etc. may be used. Polyolefin, acrylic synthetic resin, epoxy synthetic resin, etc. can be used. The film is laminated to the object to be treated by thermocompression bonding using a laminating device. It is preferable to apply an anchor coating agent as a pretreatment before the lamination process. The adhesive between the anchor film and the object to be treated can be strengthened. For example, an isocyanate type may be used.

[0146] Regarding the method for producing a thin secondary battery using an exterior body made of a film, see embodiment 4. For more information, please refer to.

[0147] <How to make the display> An example of a method for manufacturing the display portion 102 will be described below.

[0148] The display unit 102 is flexible. The display unit 102 has a display element on a flexible plate 151. It has 152 children.

[0149] As a method for producing the display element 152 on the flexible plate 151, A method of directly fabricating the display element 152 on the plate 151, or a method of forming the display element 152 on a rigid substrate such as a glass substrate, After forming a layer including a display element 152 on the substrate, the substrate is removed by etching, polishing, or the like. Then, the layer including the display element 152 is bonded to a flexible plate 151, or a glass substrate is used. A release layer is provided on a substrate having rigidity such as a plate, and a layer including a display element 152 is formed on the release layer. Then, the rigid substrate and the layer including the display element 152 are separated using a release layer, and the display element 152 is For example, a method of bonding a layer including the element 152 and a flexible plate 151 is available.

[0150] In this embodiment, the display unit 102 is an active matrix type display capable of high-definition display. In order to make a display device, heat treatment at 400℃ or higher can be performed, and the reliability of the display element is improved. A method for producing the same, that is, a method for forming a peeling layer on a substrate having rigidity such as a glass substrate, The technology described in JP-A-2003-174153 is used.

[0151] The technology described in JP-A-2003-174153 allows the transistor to be fabricated with a polysilicon active layer. A transistor using an oxide semiconductor layer is mounted on a flexible substrate or film. In addition, by using these transistors as switching elements, An electroluminescence element (EL element) is provided.

[0152] The general structure of an EL element is a pair of electrodes containing a light-emitting organic or inorganic compound. By applying a voltage to the element, Electrons and holes are injected and transported from a pair of electrodes to the light-emitting layer, respectively. The recombination of these carriers (electrons and holes) produces light-emitting organic compounds or An inorganic compound forms an excited state, and emits light when the excited state returns to the ground state.

[0153] The types of excited states that organic compounds form are singlet excited states and triplet excited states. The emission from the singlet excited state is called fluorescence, and the emission from the triplet excited state is called phosphorescence. It is called.

[0154] Such light-emitting devices are usually formed as thin films of submicrons to several microns in thickness. The major advantage is that it can be fabricated in a lightweight manner. The response time is only microseconds or less, making it extremely fast. Another feature is that sufficient light emission can be obtained with a DC voltage of several volts to several tens of volts. Therefore, the power consumption is relatively low.

[0155] EL elements have a better viewing angle than LCD elements, and are suitable for use when the display area has a curved surface. It is preferable as a display element of the display unit 102. Also, it is preferable to provide a backlight like a liquid crystal element. This reduces power consumption and the number of parts, resulting in a total thickness EL elements are preferable as the display element of the display unit 102 because they can be made as thin as possible.

[0156] The method for producing the display element 152 on the flexible plate 151 is described above (JP-A-2003-233635). The method and materials for producing the EL element are not limited to those listed in the above. Since known manufacturing methods and materials may be used, the description thereof will be omitted here.

[0157] In addition, the display device used for the display unit 102 may be a simple monochromatic light source or a display of numbers only. Therefore, a passive matrix type display device may be used. In that case, A display element 152 is fabricated on a flexible plate 151 using a fabrication method other than the technique described in Just do that.

[0158] The display unit 102 obtained by the above method is attached to the power storage device 103. The display unit 102 is electrically connected to the electronic device 100. Even if the display unit 102 is covered with a metal cover, a plastic cover, or a rubber cover, good.

[0159] When the electronic device 100 is provided with a display unit 102, the screen size is not particularly limited. For example, the screen size of the display unit 102 may be equal to or smaller than the size of the board 112. When worn, the wrist circumference of an adult is 18cm ±5cm, so the screen size should be at most For adults, the arm circumference is 23cm x the distance from the wrist to the elbow. The distance is less than 1 foot (30.48 cm), e.g., the size of the cylindrical plate 112. The maximum screen size of the display unit of the wrist-worn electronic device 100 is 23 cm x 30.48 cm. Note that the screen size mentioned here does not refer to the size when the screen has a curved surface, but to the size when the screen is flat. It refers to the size of the display when viewed from the surface. In addition, multiple display units may be installed in one electronic device. For example, For example, the electronic device may have a second display unit that is smaller than the first display unit. It is preferable to use a size larger than the screen size of the display unit. In this case, if the screen size can be placed on the support structure, the display panel and FPC The total weight of the items may be between 1g and 10g.

[0160] In addition, the thinnest part of the electronic device 100 in which the display unit 102 is provided is set to 5 mm or less. The thickest part of the electronic device 100 is the connection between the display unit 102 and the FPC. part, but may be less than 1 cm.

[0161] Additionally, the total weight of the electronic device 100 can be less than 100 g.

[0162] In addition, as shown in the cross-sectional view of FIG. 2(A), when the electronic device 100 is worn on the arm, The device can be fitted to the arm by moving a part of the support structure in the direction of the arrow 105. The total weight of the child device 100 is less than 100 g, preferably 50 g or less, and the thickest part is 1 This makes it possible to provide electronic devices that are thin and lightweight, measuring less than cm in thickness.

[0163] For example, in this specification, a display element, a display device which is a device having a display element, a light-emitting A light-emitting device, which is a device having an element and a light-emitting element, can be used in various forms or can be used in various forms. The display element, the display device, the light-emitting element, or the light-emitting device can have, for example, EL (electroluminescence) elements (EL elements containing organic and inorganic materials, organic EL elements LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.) , transistors (transistors that emit light according to electric current), electron-emitting devices, liquid crystal devices, electron Ink, electrophoretic element, grating light valve (GLV), plasma display (PDP), a display element using MEMS (microelectromechanical systems) Digital Micromirror Device (DMD), Digital MicroShutter MIRASOL (registered trademark), IMOD (Interference Modulation MEMS display elements using the shutter method, MEMS display elements using the optical interference method, Using chromium-based wetting elements, piezoelectric ceramic displays, and carbon nanotubes In addition to these, the display element may include at least one of electric or magnetic elements. The display medium has a contrast, brightness, reflectance, transmittance, etc. that change depending on the action of the light. An example of a display device using an EL element is an EL display. An example of a display device using emission elements is a field emission display (FE D) or SED type flat panel display (SED: Surface-conductio n Electron-emitter Display) and others. An example of such a display device is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display, etc.). Display, reflective LCD display, direct-view LCD display, projection LCD display Display using electronic ink, electronic powder, or electrophoretic elements. An example of a display device is electronic paper. In order to realize a projection type liquid crystal display, a part or all of the pixel electrodes are reflective electrodes. For example, a part or the whole of the pixel electrode may be In this case, the reflective electrode may have a thickness of 100 nm or less. It is also possible to provide a memory circuit such as an SRAM. This further reduces power consumption. When using an LED, it is possible to reduce the amount of light emitted by the LED. Graphene or graphite may be arranged. Graphene or graphite may be arranged in multiple layers. In this way, by providing graphene or graphite, On top of that, a nitride semiconductor, for example, an n-type GaN semiconductor layer having a crystal, can be easily formed. Furthermore, a p-type GaN semiconductor layer having crystals can be formed on the film. In addition, graphene and graphite can be used to form LEDs. An AlN layer may be provided between the GaN semiconductor layer and the GaN-type semiconductor layer. The dielectric layer may be formed by MOCVD. However, by providing graphene, The GaN semiconductor layer in the photodiode can also be formed by sputtering.

[0164] In addition to the display device, the electronic device according to one embodiment of the present invention may include other semiconductor circuits, such as an overcharge It also includes a control circuit to prevent this, as well as sensors such as an image sensor, a gyro sensor, and an acceleration sensor. The device may be equipped with a touch panel or the like. It may also be used to measure pulse and surface temperature by touching a part of the human body. For example, a display device may be provided. By mounting an image sensor on the camera, the captured image can be displayed on a display device. By incorporating sensors such as gyro sensors and acceleration sensors, it is possible to develop wrist-worn electronic devices. It can save power by switching between on and off states depending on the orientation and movement. By mounting a touch panel, the electronic device can be operated by touching a desired position on the touch panel. In addition to the display device, the above-mentioned configuration can also include a By installing memory and a CPU, it is also possible to create a wearable computer.

[0165] In addition, the electronic device of one embodiment of the present invention can be used as a display unit of a wrist-worn electronic device, and thus a display device that is different from a conventional mobile phone can be used. The electronic device of one embodiment of the present invention can be used as a sub-display by using both the display portion of the information terminal and the electronic device of one embodiment of the present invention. It can also function as a

[0166] This embodiment mode can be freely combined with other embodiment modes.

[0167] (Embodiment 2) In this embodiment, an example of a display device that can be applied to the electronic device of one embodiment of the present invention will be described. Shows.

[0168] [Top view of the display device] FIG. 20 is a top view showing an example of a display device. The display device 700 shown in FIG. A pixel portion 702 provided on a substrate 701 and a source driver 703 provided on the first substrate 701 are A pixel portion 702, a source driver circuit portion 704, a gate driver circuit portion 706, and a a sealant 712 arranged to surround the gate driver circuit section 704 and the gate driver circuit section 706; and a second substrate 705 disposed opposite to the first substrate 701. The first substrate 701 and the second substrate 705 are sealed with a sealant 712. That is, the pixel section 702, the source driver circuit section 704, and the gate driver circuit section 706 are The first substrate 701, the sealant 712, and the second substrate 705 are used for sealing. Although not shown in FIG. 20, a display element is provided between the first substrate 701 and the second substrate 705. can be done.

[0169] The display device 700 is surrounded by a sealant 712 on the first substrate 701. A pixel section 702, a source driver circuit section 704, and a gate driver circuit section 705 are arranged in a region different from the region. and an FPC terminal portion 708 (FPC: Flexible Printed Circuit portion 706) electrically connected to the In addition, the FPC terminal portion 708 is provided with The FPC 716 is connected to the pixel section 702 and the source driver circuit Various signals are supplied to the pixel section 704 and the gate driver circuit section 706. 02, a source driver circuit section 704, a gate driver circuit section 706, and an FPC terminal section 7 08 are connected to signal lines 710. Various signals are supplied by the FPC 716. 7, are connected to a pixel section 702, a source driver circuit section 704, a gate driver circuit section 705, and the like via a signal line 710. The wiring is provided to a driver circuit portion 706 and an FPC terminal portion 708.

[0170] The display device 700 may include a plurality of gate driver circuits 706. The device 700 includes a source driver circuit section 704 and a gate driver circuit section 706. Although an example in which the pixel portion 702 is formed on the same first substrate 701 is shown, the present invention is not limited to this configuration. For example, only the gate driver circuit section 706 may be formed on the first substrate 701. Alternatively, only the source driver circuit portion 704 may be formed on the first substrate 701. In this case, the substrate on which the source driver circuit or the gate driver circuit is formed (for example, A driving circuit board formed of a monocrystalline semiconductor film or a polycrystalline semiconductor film is mounted on a first substrate 701. The method of connecting the separately formed drive circuit board is not particularly limited. Instead, we use COG (Chip On Glass) method, wire bonding method, etc. can be used.

[0171] The display device 700 also includes a pixel portion 702, a source driver circuit portion 704, and a gate The driver circuit section 706 has a wiring section or a plurality of transistors. The semiconductor device according to the embodiment can be applied.

[0172] The display device 700 can also include various elements, such as: Liquid crystal elements, EL (electroluminescence) elements (EL elements containing organic and inorganic materials, Organic EL elements, inorganic EL elements), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs ED, etc.), transistors (transistors that emit light according to the current), electron emitters, electron Ink, electrophoretic elements, GLV, PDP, MEMS display elements, DMD, DMS, MIRASOL (registered trademark), IMOD element, shutter-type MEMS display element, optical interference Interferometric MEMS display element, electrowetting element, piezoelectric ceramic display Carbon nanotube display elements, etc., are devices that use electrical or magnetic effects to Some display devices have display media that change contrast, brightness, reflectance, transmittance, etc.

[0173] The display method of the display device 700 may be a progressive method or an interlace method. In addition, the color elements controlled by pixels when displaying in color are R It is not limited to the three colors GB (R stands for red, G stands for green, B stands for blue). For example, It may be composed of four pixels: a pixel, a pixel, and a pixel of white (W). As in the column, two colors of RGB compose one color element, and two different colors are created by the color element. Alternatively, one or more colors such as yellow, cyan, magenta, etc. may be selected for RGB. The size of the display area may be different for each dot of the color element. However, the disclosed invention is not limited to color display devices, and may be used with monochrome displays. The present invention can also be applied to display devices such as those shown in FIG.

[0174] In addition, the backlight (organic EL element, inorganic EL element, LED, fluorescent lamp, etc.) is white light ( In order to display full color on a display device, a colored layer (also called a color filter) is used. The colored layer may be, for example, red (R), green (G), blue (B) , yellow (Y), etc. can be used in appropriate combination. The color reproducibility can be improved compared to when no color layer is used. By disposing a region having a colored layer and a region not having a colored layer, The white light in the region may be directly used for display. This reduces the decrease in brightness caused by the colored layer during bright display, reducing power consumption by 20%. However, it may be possible to reduce the amount of light emitted by organic EL elements and inorganic EL elements by about 30%. When using elements to display full color, R, G, B, Y, and white (W) are It is also possible to emit light from an element having a luminescent color. By using a self-luminous element, it is possible to use a colored layer. In some cases, power consumption can be reduced even further than when the

[0175] In this embodiment, a liquid crystal element and an EL element are used as display elements. 21 and 24. Note that FIG. 21 shows the state of the circuit shown in FIG. 20. FIG. 24 is a cross-sectional view of the liquid crystal display device, which uses a liquid crystal element as a display element. 20, which is a cross-sectional view taken along the dashed line QR, and shows a configuration in which an EL element is used as a display element. It is.

[0176] First, the common parts shown in FIG. 21 and FIG. 24 will be explained, and then the different parts will be explained. This will be explained below.

[0177] [Explanation of common parts of display device] The display device 700 shown in FIG. 21 and FIG. 24 includes a wiring portion 711 and a pixel portion 702. The display panel 700 includes a source driver circuit section 704 and an FPC terminal section 708. The line portion 711 includes a signal line 710. The pixel portion 702 includes a transistor 750 and A capacitor 790 (a capacitor 790a or a capacitor 790b) is provided. The driver circuit portion 704 includes a transistor 752 .

[0178] The signal line 710 is connected to the source and drain electrodes of the transistors 750 and 752. The signal line 710 is formed in the same process as the conductive film that functions as the transistor 75. 0, 752, a conductive film formed in a process different from the source electrode and drain electrode, e.g., The signal line 710 may be a conductive film that functions as a conductive electrode. When this material is used, there is little signal delay caused by wiring resistance, making it possible to display images on a large screen. do.

[0179] Various transistors can be used as the transistors 750 and 752. The transistor 750 and the transistor 752 are formed by a gate electrode 721 and a semiconductor The semiconductor layer 722 and the gate electrode 723 and the gate electrode 724 are also included. An insulating film is provided between the first electrode 721 and the second electrode 722 .

[0180] Transistors such as transistor 750 and transistor 752 included in the display device 700 The structure of the transistor is not particularly limited. For example, the transistor may be a staggered type transistor or an inverted staggered type transistor. The transistor may be either a top gate type or a bottom gate type. The semiconductor material used for the transistor is not particularly limited, and may be, for example, Examples include silicon, germanium, silicon carbide, and gallium nitride. At least one of indium, gallium, and zinc, such as n-Ga-Zn-based metal oxide An oxide semiconductor containing the above may be used.

[0181] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a partially crystalline region) If a semiconductor having crystallinity is used, the This is preferable because it is possible to suppress deterioration of the resistor characteristics.

[0182] Here, semiconductors such as transistors used in pixels, driving circuits, touch sensors, etc. It is preferable to use oxide semiconductors for semiconductor devices. It is preferable to use an oxide semiconductor with a wide band gap. When a semiconductor material with low carrier density is used, the transistor can be turned off. This is preferable since it is possible to reduce the current.

[0183] For example, the oxide semiconductor may contain at least indium (In) or zinc (Zn It is preferable that the oxide contains In-M-Zn (wherein M is Al, Ti, Metals such as Ga, Ge, Y, Zr, Sn, La, Ce or Hf) are included. nothing.

[0184] In particular, the semiconductor layer has a plurality of crystal parts, and the crystal parts have a c-axis aligned with a surface on which the semiconductor layer is formed. or oriented perpendicular to the upper surface of the semiconductor layer and having no grain boundary between adjacent crystal portions. An oxide semiconductor film is preferably used.

[0185] Such an oxide semiconductor does not have crystal grain boundaries, so that when the display panel is curved, The occurrence of cracks in the oxide semiconductor film due to stress is suppressed. Such oxide semiconductors are suitable for use in display panels that are flexible and can be curved when used. There can be.

[0186] By using such materials for the semiconductor layer, the fluctuation of electrical characteristics is suppressed, and reliability is improved. This allows for high-performance transistors.

[0187] In addition, due to its low off-state current, the charge stored in the capacitance through the transistor can be released for a long period of time. By applying such a transistor to a pixel, It is also possible to stop the driving circuit while maintaining the grayscale of the image displayed in the display area. As a result, it is possible to realize electronic equipment with extremely reduced power consumption.

[0188] In order to stabilize the characteristics of the transistor, it is preferable to provide an undercoat film. , silicon oxide film, silicon nitride film, silicon oxynitride film, silicon nitride oxide film, etc. The base film can be formed by a single layer or a multilayer structure using an organic insulating film. , CVD (Chemical Vapor Deposition) method (Plasma CVD method, thermal CVD method, MOCVD (Metal Organic CVD) method, etc.), ALD (Atomic Layer Deposition), coating, printing, etc. It should be noted that the undercoat film does not have to be provided if it is not necessary.

[0189] The FPC terminal portion 708 includes a connection electrode 760, an anisotropic conductive film 780, and an FPC 71. 6. The connection electrode 760 is connected to the source and drain electrodes of the transistors 750 and 752. The connection electrode 760 is formed in the same process as the conductive film that functions as the drain electrode. The terminal of the PC 716 is electrically connected via an anisotropic conductive film 780 .

[0190] The first substrate 701 and the second substrate 705 may be, for example, a glass substrate. The glass substrate may have a curved surface.

[0191] In addition, flexible substrates may be used as the first substrate 701 and the second substrate 705. The flexible substrate may be, for example, a plastic substrate. A flexible substrate may be attached to a plate or the like.

[0192] By using a flexible substrate, a flexible display device can be manufactured. The display device is flexible, so it can be attached to curved surfaces or irregular shapes. This enables a wide variety of uses.

[0193] For example, by using a flexible substrate such as a plastic substrate, the display device can be made thin. It is possible to reduce the thickness and weight of the substrate. A display device using this material is less likely to break, and can therefore have improved durability against shocks, for example when dropped. Cut.

[0194] In addition, on the second substrate 705 side, a light-shielding film 738 functioning as a black matrix and A colored film 736 that functions as a color filter, a light-shielding film 738 that is in contact with the colored film 736, and An insulating film 734 is provided.

[0195] In addition, a structure 778 is provided between the first substrate 701 and the second substrate 705. The structure 778 is a columnar spacer obtained by selectively etching an insulating film. A device for controlling the distance (cell gap) between the first substrate 701 and the second substrate 705 is provided. In addition, a spherical spacer may be used as the structure 778. In the above, the structure 778 is provided on the second substrate 705 side. For example, as shown in FIG. or a structure 778 is provided on both the first substrate 701 and the second substrate 705. It is also possible to use the following.

[0196] 21 and 24, a transistor 750, a transistor 752, and a capacitor On 790, insulating films 764, 766, and 768 are provided.

[0197] The display device 700 may also have a protective film 799. The protective film 799 is formed uniformly. As an example of a method for forming the protective film 799, it is preferable to use the ALD method. The protective film 799 can protect a display element and a transistor, for example. And, a protective film such as protective film 799 may have other functions, e.g. Therefore, a protective film such as the protective film 799 may be simply called a film. A protective film such as protective film 799 may be referred to as a first film, a second film, or the like.

[0198] Here, an oxide semiconductor is used for the semiconductor layers of the transistor 750 and the transistor 752. In this case, the insulating film 768 is an insulating film having a blocking effect against oxygen, hydrogen, water, and the like. By providing the transistor 750 and the transistor 752, It is possible to prevent the diffusion of oxygen to the outside and the intrusion of hydrogen, water, etc. into the semiconductor layer from the outside. The insulating film 768 may also function as a protective film.

[0199] For example, the insulating film 768 may be made of aluminum oxide, magnesium oxide, silicon oxide, or Silicon oxynitride, silicon nitride oxide, silicon nitride, gallium oxide, germanium oxide , yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide An insulating film containing one or more of tantalum oxide and tantalum oxide can be used. The insulating film 768 may be formed of lanthanum (La), nitrogen, zirconium, or the like. Zirconium (Zr) and the like may be contained as impurities.

[0200] [Example of the configuration of a display device using a liquid crystal element as a display element]

[0201] The display device 700 shown in FIG. 21 includes a capacitor 790a. It has a structure having a dielectric between a pair of electrodes.

[0202] The display device 700 shown in FIG. 21 includes a liquid crystal element 775. The conductive film 772, the conductive film 774, and the liquid crystal layer 776 are included. The display device 700 shown in FIG. The alignment state of the liquid crystal layer 776 is changed by the voltage applied to the conductive film 772 and the conductive film 774. By this, the transmission or non-transmission of light is controlled, and an image can be displayed.

[0203] The conductive film 772 serves as a source electrode and a drain electrode of the transistor 750. The conductive film 772 is connected to a conductive film that functions as a pixel electrode, That is, it functions as one electrode of the display element.

[0204] The conductive film 772 may be, for example, indium tin oxide or indium oxide containing tungsten oxide. Indium Zinc Oxide with Tungsten Oxide, Indium Zinc Oxide with Titanium Oxide oxide, indium tin oxide, indium zinc oxide, silicon oxide A conductive material having light transmitting properties, such as doped indium tin oxide, can be used.

[0205] Although not shown in FIG. 21, the conductive films 772 and 774 on the side in contact with the liquid crystal layer 776 Although not shown in FIG. Optical members (optical substrates) such as optical members, phase difference members, and anti-reflection members may be provided as appropriate. For example, circularly polarized light produced by a polarizing substrate and a retardation substrate may be used. Crites, sidelights, etc. may also be used.

[0206] When liquid crystal elements are used as display elements, thermotropic liquid crystal, low molecular weight liquid crystal, high molecular weight liquid crystal, For example, a liquid crystal, a polymer-dispersed liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, etc. can be used. Depending on the conditions, the liquid crystal material can have a cholesteric phase, a smectic phase, a cubic phase, or a chiral phase. It shows nematic phase, isotropic phase, etc.

[0207] In addition, when the in-plane switching method is adopted, liquid crystal that exhibits a blue phase without using an alignment film may be used. The blue phase is one of the liquid crystal phases. When the temperature of a cholesteric liquid crystal is increased, the cholesteric The blue phase appears just before the transition from the black phase to the isotropic phase. In order to improve the temperature range, a liquid crystal composition containing a chiral agent of several weight percent or more is used. The liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent is used in the liquid crystal layer. It has a short response time and is optically isotropic, so alignment treatment is unnecessary and it has little viewing angle dependency. In addition, since there is no need to provide an alignment film, rubbing treatment is also unnecessary. It is possible to prevent electrostatic damage caused by the electrostatic discharge phenomenon during the manufacturing process of the liquid crystal display device. Defects and damage can be reduced.

[0208] In addition, when liquid crystal elements are used as display elements, TN (Twisted Nematic) ) mode, IPS (In-Plane-Switching) mode, FFS (Frin ge Field Switching) mode, ASM (Axially Symme tric aligned Micro-cell) mode, OCB(Optical Compensated Birefringence mode, FLC (Ferrero lectric Liquid Crystal) mode, AFLC (AntiFerr Electrochemical Liquid Crystal (ECC) mode can be used. .

[0209] In addition, normally black type liquid crystal display devices, for example, those using a vertical alignment (VA) mode The vertical alignment mode may be a transmission type liquid crystal display device. For example, MVA (Multi-Domain Vertical Alignment) ) mode, PVA (Patterned Vertical Alignment) mode mode, ASV mode, etc. can be used.

[0210] The display device 700 may also have a protective film 799. In the example shown in FIG. 23, the device 700 has a protective film 799. The edge of the protective film 799 has a recess. The first substrate 701 on which the colored film 736 and the second substrate 705 are provided are then slid together. The substrate is then bonded using a bonding material 712. Next, a protective film 799 is formed using the ALD method. The connection portion with the anisotropic conductive film 780 is masked to form a protective film 799. formation can be prevented.

[0211] The ALD method is capable of forming extremely uniform and dense films on the deposition surface. By using the LD method, for example, aluminum oxide, hafnium oxide, zirconium oxide, Titanium oxide, zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO) , tantalum oxide, silicon oxide, manganese oxide, nickel oxide, erbium oxide, cobalt oxide Barium, Tellurium Oxide, Barium Titanate, Titanium Nitride, Tantalum Nitride, Aluminum Nitride , tungsten nitride, cobalt nitride, manganese nitride, hafnium nitride, etc. as a protective film The protective film is not limited to an insulating film, but may be a conductive film. For example, ruthenium, platinum, nickel, cobalt, manganese, copper, etc. may be deposited. It is possible.

[0212] By forming a protective film 799 on the side of the display panel using the ALD method, moisture and other This can prevent external components from entering the device, thereby reducing the variation in transistor characteristics. This allows for a narrower frame and stabilizes the operation of the peripheral circuits. This allows the area to be expanded and further allows the display device to have higher resolution.

[0213] In addition, by using the protective film 799, the distance between the edge of the peripheral circuit and the edge of the substrate can be narrowed. The high barrier properties ensure stable transistor characteristics, i.e., stable operation of peripheral circuits. Therefore, the frame of the display panel can be narrowed. The distance to the cut part can be 300 μm or less, preferably 200 μm or less. Also, the structure at the end portion can be made uneven as shown in FIG.

[0214] [Display device using light-emitting elements as display elements]

[0215] The display device 700 shown in FIG. 24 includes a capacitor 790b. This structure has a dielectric between a pair of electrodes. The conductive film serving as the gate electrode of the transistor 750 is formed in the same process as the conductive film. The other electrode of the capacitor 790b is a conductive film A conductive film is used to function as a drain electrode and a drain electrode. As the dielectric, an insulating film that functions as a gate insulating film of the transistor 750 is used.

[0216] In addition, in FIG. 24, a planarization insulating film 770 is provided on the insulating film 768 .

[0217] The planarization insulating film 770 may be made of a polyimide resin, an acrylic resin, or a polyimide amide resin. Heat-resistant organic materials such as benzocyclobutene resin, polyamide resin, and epoxy resin In addition, by stacking multiple insulating films made of these materials, 21, a planarization insulating film 770 may be formed. A configuration in which 0 is not provided is also possible.

[0218] The display device 700 shown in FIG. 24 also includes a light-emitting element 782. The light-emitting element 782 is The display device 700 shown in FIG. The EL layer 786 of the light emitting element 782 emits light to display an image. can be done.

[0219] The conductive film 784 serves as a source electrode and a drain electrode of the transistor 750. The conductive film 784 is connected to a conductive film that functions as a pixel electrode. The conductive film 784 functions as an electrode, that is, one of the electrodes of the display element. In the above, a conductive film that transmits light or a conductive film that reflects visible light can be used. Examples of conductive films that are transparent to visible light include indium (In), zinc (Zn), and ZnO. It is recommended to use a material containing one of the following elements: Zn (Zn) or tin (Sn). The reflective conductive film may be made of a material containing aluminum or silver. stomach.

[0220] In addition, in the display device 700 shown in FIG. An insulating film 730 is provided. The insulating film 730 covers a part of the conductive film 784. 782 has a top emission structure. Therefore, the conductive film 788 has a light transmitting property, and It transmits the light emitted by the L layer 786. In this embodiment, the top emission The structure is exemplified, but is not limited to this. For example, a bottom emission structure in which light is emitted to both the conductive film 784 and the conductive film 788; It can also be applied to al-emission structures.

[0221] A colored film 736 is provided at a position overlapping the light emitting element 782, and a colored film 736 is provided at a position overlapping the insulating film 730. A light-shielding film 738 is provided at the position where the light-shielding film 738 is to be formed, the wiring portion 711, and the source driver circuit portion 704. The colored film 736 and the light-shielding film 738 are covered with an insulating film 734. In addition, the space between the light emitting element 782 and the insulating film 734 is filled with a sealing film 732. In the display device 700 shown in FIG. 1, a configuration in which a colored film 736 is provided is illustrated. For example, when the EL layer 786 is formed by coloring, The film 736 may not be provided.

[0222] As shown in FIG. 25, the display device 700 may have a protective film 799. By forming a protective film 799 on the side of the filter using the ALD method, it is possible to prevent external components such as moisture from entering the filter. In particular, when an organic EL layer is used as the EL layer 786, the penetration of water can be suppressed. By suppressing the intrusion of oxygen, it is possible to suppress the deterioration of the EL layer and extend the life of the light-emitting element. This is preferable because it allows

[0223] The protective film 799 is, for example, a first substrate 7 on which a transistor, a light emitting element, etc. are provided. After bonding the first substrate 01 and the second substrate 705, the film may be formed.

[0224] This embodiment mode can be freely combined with other embodiment modes.

[0225] (Embodiment 3) In this embodiment, an example of a method for charging a power storage device by wireless power supply will be described. For wireless power supply, electric fields, magnetic fields, electromagnetic waves, etc. can be used. The receiving device may be an antenna, a coil, or the like.

[0226] The electronic device according to one embodiment of the present invention receives an electric field, a magnetic field, an electromagnetic wave, or the like from an antenna, a coil, or the like. In addition, the electronic device of one embodiment of the present invention preferably includes a charging device. It is preferable to have a sensor.

[0227] By using a coupling coil and a coupling capacitor, it is possible to charge the storage device without contact. In addition, the coupling coil can be changed into an antenna. Here, a secondary battery is used as the power storage device. Here is an example of using the charger. The primary coil of the charger and the secondary coil of the electronic device are magnetically coupled to each other. The magnetic field generated by the primary coil generates a voltage in the secondary coil, using electromagnetic induction. Charging is achieved by transmitting power to the secondary coil without contact. Since it is preferable to provide the coil in contact with the filter, the coil of the electronic device is also flexible. It is preferable to provide the antenna in the electronic device. This is also fine.

[0228] When installing an antenna on the secondary battery of a wrist-worn electronic device having a display module, The charging of the secondary battery is not limited to the charging by contact, but may be provided with a memory and may transmit and receive electronic data. Or, by providing a GPS function, it can acquire location information and GPS time and display the location and clock. An antenna may be provided to enable the above.

[0229] For safety reasons, the input / output terminals for charging or discharging the secondary battery are exposed so that they may come into contact with any part of the human body. If the input / output terminals are exposed, rain or other water may damage the input / output terminals. There is a risk of short-circuiting the power cord or electric shock if the input / output terminals come into contact with the human body. If so, the input / output terminals can be configured not to be exposed on the surface of the electronic device.

[0230] Note that the present embodiment is the same as that of the first embodiment except that an antenna, a coil, and a wireless power supply converter are provided. Therefore, other detailed description will be omitted here.

[0231] According to the first embodiment, a power storage device, here a secondary battery, is fixed on the plate, and a display is placed on the secondary battery. The secondary battery preferably has a curved shape. It is preferable that the secondary battery is flexible. The wireless power converter and antenna are also installed so that they overlap partly with the display. Fix.

[0232] The wireless power supply converter and antenna weigh less than 10g, and the total weight is almost the same as in the first embodiment. The weight can be made almost the same.

[0233] FIG. 12 is a schematic diagram of an electronic device 400 having an antenna (not shown) and a charger 401. When the electronic device 400 is placed on the charger 401, power is supplied from the antenna of the charger 401. can be supplied to the electronic device 400 to charge the secondary battery of the electronic device 400.

[0234] In addition, information such as the remaining charge and the time remaining until full charge is displayed on the display of the electronic device 400. It is possible to display it.

[0235] This embodiment mode can be freely combined with other embodiment modes.

[0236] (Embodiment 4) In this embodiment, a method for manufacturing a thin storage battery shown in Embodiment 1 and a method for manufacturing a coin-type storage battery will be described. An example of the structure will be described.

[0237] [Method of manufacturing thin secondary batteries] Regarding a method for manufacturing a thin secondary battery using an exterior body made of a film as shown in the first embodiment, FIG. 10 shows an external view of a thin secondary battery. 11(A) and 11(B) are cross-sectional views taken along dashed lines B1-B2 and B2-B3, respectively.

[0238] A method for producing a thin secondary battery will be described.

[0239] The separator 207 is processed into a bag shape and encases either the positive electrode 203 or the negative electrode 206. For example, as shown in FIG. 13(A), the positive electrode 203 is sandwiched between the electrodes. The separator 207 is folded in half so that the sealing portion 5 is formed on the outer side of the area overlapping with the positive electrode 203. By sealing with 14, the positive electrode 203 can be reliably supported within the separator 207. Then, as shown in FIG. 13(B), the positive electrode 203 and the negative electrode 204 wrapped in the separator 207 are The electrodes 206 are alternately stacked and placed inside the exterior body 209 to form a thin secondary battery. It is advisable to form

[0240] FIG. 14B shows an example in which a current collector is welded to a lead electrode. 1 is welded to the positive electrode lead electrode 510. The positive electrode current collector 201 is welded to the positive electrode lead electrode 510 by ultrasonic welding or the like. The positive electrode current collector 201 is welded to the positive electrode lead electrode 510 at a welding area 512 using a By having the curved portion 513 shown in FIG. 14(B), the thin secondary battery can be easily removed from the outside after it is manufactured. This can reduce the stress caused by the application of force, thereby improving the reliability of thin secondary batteries. This can be done.

[0241] In the thin secondary battery shown in FIG. 13 and FIG. 14, the positive electrode lead electrode 510 is The positive electrode current collector 201 of the negative electrode 206 is connected to the negative electrode lead electrode 511. 204 and 205 are ultrasonically bonded to each other. The positive electrode serves as the terminal for electrical contact with the outside. The current collector 201 and the negative electrode current collector 204 can also serve as a single electrode. In that case, Instead, a part of the positive electrode current collector 201 and a part of the negative electrode current collector 204 are exposed to the outside from the exterior body 209. It may be arranged so as to project

[0242] In addition, in FIG. 10, the positive electrode lead electrode 510 and the negative electrode lead electrode 511 are arranged on the same side. However, as shown in FIG. 15, the positive electrode lead electrode 510 and the negative electrode lead electrode 511 are connected to different sides. In this way, the storage battery according to one embodiment of the present invention allows the lead electrodes to be freely arranged. Therefore, the degree of design freedom is high. In addition, the manufacturing method of a product using the storage battery according to one embodiment of the present invention can be improved. It can improve sexuality.

[0243] In the thin storage battery, the exterior body 209 is made of, for example, polyethylene, polypropylene, Aluminium, fluorine, etc. are applied to a membrane made of a material such as polycarbonate, ionomer or polyamide. A thin metal film made of stainless steel, copper, nickel, or other material with excellent flexibility is applied, and an outer layer is then applied to the thin metal film. The outer surface of the housing is provided with an insulating synthetic resin film such as polyamide resin or polyester resin. A three-layer film may be used.

[0244] FIG. 11 shows an example in which a positive electrode active material layer and a negative electrode active material layer face each other via a separator. Although the number of pairs of material layers is set to 5, the number of pairs of active material layers is not limited to 5, and may be up to 5. In the case where the number of active material layers is large, the storage battery has a larger capacity. In addition, when the number of active material layers is small, the battery can be made thin and has excellent flexibility. It may be a battery.

[0245] In the above configuration, the exterior body 209 of the secondary battery has a radius of curvature of 30 mm or more, preferably The film that is the exterior of the secondary battery can deform within a radius of 10 mm or more. In the case of a secondary battery with a laminated structure, the battery is curved. The cross-sectional structure is that the exterior film is sandwiched between two curved lines.

[0246] The radius of curvature of a surface will be described with reference to FIG. 16. In FIG. 16(A), a curved surface 170 A part of a curve 1702 included in a surface 1700 is cut into a plane 1701 that cuts through 0. Approximate the arc and set the radius of the circle as the radius of curvature 1703 and the center of the circle as the center of curvature 1704. FIG. 16B shows a top view of the curved surface 1700. FIG. 16C shows the curved surface 1700 on a flat surface 1701. The cross-sectional view of 1700 is shown. When cutting a curved surface with a plane, the angle of the plane to the curved surface is The radius of curvature of the curve that appears in the cross section will differ depending on the cutting position and the etc., the smallest radius of curvature is taken as the radius of curvature of the surface.

[0247] The secondary battery, which sandwiches electrodes and electrolyte (1805) between two films as the exterior body, is curved. In this case, the radius of curvature 1802 of the film 1801 on the side closer to the center of curvature 1800 of the secondary battery is smaller than the radius of curvature 1804 of the film 1803 on the side farther from the center of curvature 1800 ( FIG. 17(A). When a secondary battery is curved to have an arc-shaped cross section, the center of curvature 180° is closest to the center of curvature. The surface of the film is subjected to compressive stress, and the surface of the film far from the center of curvature 1800 is subjected to tension stress. Tensile stress is applied (Figure 17(B)). The pattern formed on the surface of the exterior body is a concave or convex pattern. When this is formed, even if compressive or tensile stress is applied, the effects of strain are not observed. Therefore, the secondary battery can be prevented from being damaged by the external casing on the side closer to the center of curvature. The radius of curvature of the .

[0248] The cross-sectional shape of the secondary battery is not limited to a simple arc shape, and may be a shape that includes a partial arc. For example, the shape shown in FIG. 17(C), a wavy shape (FIG. 17(D)), an S-shape, etc. In the case where the curved surface of the secondary battery has a shape having a plurality of centers of curvature, Among the radii of curvature at each of the centers of curvature, the surface with the smallest radius of curvature is 2 The radius of curvature of the outer casing closest to the center of curvature of the outer casing is 30 mm or more, preferably 10 mm or less. The secondary battery can be deformed within a range of 0.1 m or more.

[0249] Next, aging of the secondary battery after fabrication will be described. It is preferable to perform aging. An example of the aging conditions is described below. First, charge at a rate of 0.001C to 0.2C. The temperature should be, for example, above room temperature. The temperature should be below 40°C. If the electrolyte decomposes and gas is generated, When this gas accumulates in the cell, areas are created where the electrolyte cannot come into contact with the electrode surface. In other words, the effective reaction area of ​​the electrode decreases, which corresponds to a higher effective current density. Correct.

[0250] If the current density becomes too high, a voltage drop occurs depending on the resistance of the electrode, and lithium is transferred to the active material. At the same time as lithium insertion occurs, lithium deposition on the active material surface also occurs. For example, after lithium is deposited, a film may grow on the surface. If this happens, the lithium deposited on the surface will not dissolve, and the lithium that does not contribute to the capacity will In addition, if the deposited lithium physically collapses and loses electrical continuity with the electrode, However, lithium that does not contribute to the capacity is generated. It is preferable to degas before the lithium potential is reached.

[0251] After degassing, the mixture is heated to a temperature higher than room temperature, preferably 30° C. to 60° C. More preferably, the temperature is 35° C. or higher and 60° C. or lower, for example, 1 hour or higher and 100 hours or lower. During the first charge, the electrolyte decomposes on the surface and forms a film. Therefore, for example, by keeping the temperature higher than room temperature after degassing, The coating may also become dense.

[0252] Here, when bending a thin storage battery, it is preferable to bend the battery after degassing. Bending after venting can reduce the amount of gas in areas where bending can cause stress. This can prevent the deposition of lithium, etc.

[0253] [Coin-type battery] Next, as an example of the power storage device, an example of a coin-type storage battery will be described with reference to FIG. FIG. 8(A) is an external view of a coin-type (single-layer flat) storage battery, and FIG. 18(B) is a cross-sectional view of the battery. FIG.

[0254] The coin-type storage battery 300 has a positive electrode can 301 that also serves as a positive electrode terminal and a negative electrode can 302 that also serves as a negative electrode terminal. 302 is insulated and sealed by a gasket 303 made of polypropylene or the like. The negative electrode 307 is composed of a negative electrode current collector 308 and a negative electrode active material layer 309 provided in contact with the negative electrode current collector. The negative electrode active material layer 309 includes the negative electrode active material described in Embodiment 1. In addition, the negative electrode described in Embodiment 2 is preferably used for the negative electrode 307.

[0255] The positive electrode 304 is composed of a positive electrode current collector 305 and a positive electrode active material layer 30 provided in contact with the positive electrode current collector 305. The positive electrode active material layer 306 may be formed by the above-mentioned method. For the separator 310, refer to the description of the separator 207. For details, please refer to the description of the electrolyte 208.

[0256] The positive electrode 304 and the negative electrode 307 used in the coin-type storage battery 300 are each an active material. The barrier layer need only be formed on one side.

[0257] The positive electrode can 301 and the negative electrode can 302 are made of nickel or aluminum, which is resistant to corrosion by the electrolyte. Metals such as aluminum and titanium, or their alloys or alloys of these with other metals (e.g., stainless steel, In addition, nickel or aluminum can be used to prevent corrosion by the electrolyte. The positive electrode can 301 is a positive electrode 304, and the negative electrode can 302 is a negative electrode. and electrodes 307, respectively.

[0258] The negative electrode 307, the positive electrode 304, and the separator 310 are impregnated with an electrolyte, and the negative electrode 307, the positive electrode 304, and the separator 310 are then impregnated with an electrolyte. As shown in FIG. 1, the positive electrode can 301 is placed downward, and the positive electrode 304, the separator 310, the negative electrode 307, The positive electrode can 301 and the negative electrode can 302 are stacked in this order, and the positive electrode can 301 and the negative electrode can 302 are secured together with a gasket 303 interposed therebetween. Then, the laminate is crimped to manufacture a coin-type storage battery 300.

[0259] This embodiment mode can be freely combined with other embodiment modes.

[0260] (Embodiment 5) In this embodiment, a film formation method and a method for manufacturing a display device according to one embodiment of the present invention will be described. The deposition apparatus will be described.

[0261] <CVD and ALD Film Deposition> Conventional CVD deposition equipment requires a precursor gas for the reaction during deposition. One or more of the above are simultaneously supplied to the chamber. Precursors for the reaction are introduced into the chamber in sequence, and the sequence of gas introduction is repeated. For example, each switching valve (also called a high-speed valve) is turned on and off. Two or more precursors are supplied to the chamber in sequence by switching between them, and multiple precursors are mixed. To avoid dust, an inert gas (such as argon or nitrogen) is placed after the first precursor. In addition, instead of introducing an inert gas, the first precursor is introduced. Thus, after the first precursor is evacuated, the second precursor can be introduced.

[0262] Figure 27 (A), (B), (C), and (D) show the film formation process by the ALD method. The sintered body 601 is adsorbed onto the surface of the substrate (see FIG. 27(A)), and a first monolayer is formed (see FIG. In this case, metal atoms contained in the precursor are transferred to the water on the substrate surface. It can bond with acid groups. Alkyl groups such as methyl and ethyl groups are bonded to metal atoms. The second precursor 601 may be introduced after the first precursor 601 is exhausted. 27(C)) and a second monolayer is deposited on the first monolayer to form a thin film. (See FIG. 27(D)). For example, when an oxidizing agent is included as the second precursor, If present, the metal atom or alkyl bonded to the metal atom present in the first precursor A chemical reaction can occur between the group and an oxidizing agent to form an oxide film.

[0263] In addition, the ALD method is a film formation method based on surface chemical reactions, and the precursor The self-limiting mechanism works by adsorbing the molecules, and a layer is formed. For example, trimethylaluminum The precursor, such as ammonium, reacts with the hydroxyl group (OH group) present on the surface to be coated. At this time, only surface reactions occur due to heat, so the precursor comes into contact with the surface to be coated and heat energy is released. Metal atoms in the precursor can be adsorbed onto the surface of the film to be formed via the energy. In addition, the precursor has a high vapor pressure, is thermally stable before film formation, and does not self-decompose. The precursor is introduced as a gas. Therefore, the first precursor and the second precursor introduced alternately have time to diffuse sufficiently. If this could be achieved, it would be possible to form a film with good coverage even in areas with high aspect ratio unevenness. It is possible.

[0264] In addition, in the ALD method, the gas introduction sequence is controlled and repeated multiple times until the desired thickness is achieved. By repeating the process, a thin film with excellent step coverage can be formed. The thickness can be precisely adjusted by changing the number of times the nozzle is turned on. By increasing the pressure, the deposition rate can be increased and the impurity concentration in the film can be reduced. can be done.

[0265] There are two types of ALD: ALD using heat (thermal ALD) and ALD using plasma (plasma ALD). In the thermal ALD method, the precursor reacts using thermal energy. In the plasma ALD method, the precursor reaction is carried out in a radical state.

[0266] The ALD method can deposit extremely thin films with high precision. High coverage and high film density.

[0267] In addition, the thermal ALD method suppresses the occurrence of defects in the film because there is no plasma damage. It is possible.

[0268] Plasma ALD In addition, by forming a film using the plasma ALD method, compared to the ALD method using heat (thermal ALD method), The plasma ALD method can form films at temperatures even lower than 100 degrees. The deposition rate can be maintained without decreasing. Because the plasma can generate radicals, it is possible to form films of not only oxides but also nitrides. can be done.

[0269] In addition, the plasma ALD method can enhance the oxidizing power of the oxidizing agent. When forming a film using the method described above, the precursors remaining in the film or the active substances desorbed from the precursors are It is possible to reduce the amount of organic components, and also to reduce the amount of carbon, chlorine, hydrogen, etc. in the film. It is possible to have a film with a low concentration of impurities.

[0270] In addition, when light-emitting elements (such as organic EL elements) are used as display elements, if the process temperature is high, However, there is a risk that the deterioration of the light-emitting element will be accelerated. Since the process temperature can be lowered, deterioration of the light-emitting element can be suppressed.

[0271] In addition, when performing plasma ALD, inductively coupled plasma (ICP) is used to generate radical species. This uses a ductively coupled plasma. can be generated in a state separated from the substrate, and the substrate or the film is formed on the surface. Plasma damage to the film can be suppressed.

[0272] As a result of the above, by using the plasma ALD method, the process temperature is lower than other film formation methods. The surface coverage can be increased and the thickness of the substrate can be reduced after the display panel is manufactured. This prevents water from entering the substrate from the outside. This improves the reliability of the driver operation of the peripheral circuits at the edge of the panel. In order to improve the reliability of transistor characteristics, stable operation is possible even with a narrow frame. It becomes possible to create

[0273] Next, a film formation apparatus that can be used for manufacturing the display device of one embodiment of the present invention will be described. An example of the ALD process will be described with reference to FIG.

[0274] [Example of the configuration of ALD deposition equipment] FIG. 28 shows a deposition apparatus ALD that can be used to manufacture a display module according to one embodiment of the present invention. The film formation apparatus ALD described in this embodiment includes a film formation chamber 180 and and a control unit 182 connected to the film formation chamber 180.

[0275] The control unit 182 includes a control device (not shown) that supplies control signals, and a control circuit (not shown) that receives the control signals. The flow rate controller 182 includes a flow rate controller 182a, a flow rate controller 182b, and a flow rate controller 182c. For example, a high-speed valve can be used as a flow rate controller. By doing so, the flow rate can be precisely controlled. The heater 182h controls the heating mechanism 182h.

[0276] The flow rate controller 182a is supplied with a control signal, the first source material, and an inert gas. The supply unit has a function of supplying the first raw material or the inert gas based on a control signal.

[0277] The flow rate controller 182b is supplied with a control signal, the second source gas, and an inert gas. The gas supply device has a function of supplying the second raw material or the inert gas based on a control signal.

[0278] The flow rate controller 182c is supplied with a control signal and connects to the exhaust device 185 based on the control signal. It has the function of continuing.

[0279] 《Raw material supply department》 The raw material supply unit 181a has a function of supplying the first raw material, and is connected to a flow rate controller 182a. Connected.

[0280] The raw material supply unit 181b has a function of supplying the second raw material and is connected to the flow rate controller 182b. It has been done.

[0281] A vaporizer or a heating means can be used in the raw material supply section. This allows the solid raw material It is possible to produce gaseous raw materials from gas or liquid raw materials.

[0282] The number of raw material supply parts is not limited to two, and the raw material supply part may have three or more raw material supply parts.

[0283] 《Raw materials》 A variety of materials can be used as the first feedstock.

[0284] For example, a volatile organometallic compound, a metal alkoxide, etc. can be used as the first raw material. Cut.

[0285] Various substances that react with the first raw material can be used as the second raw material. For example, Substances that contribute to oxidation reactions, substances that contribute to reduction reactions, substances that contribute to addition reactions, substances that contribute to decomposition reactions The second raw material may be a substance that contributes to the hydrolysis reaction or a substance that contributes to the hydrolysis reaction. do.

[0286] Radicals and the like can also be used. For example, a raw material is supplied to a plasma source, and the plasma Specifically, oxygen radicals, nitrogen radicals, etc. can be used. Cut.

[0287] By the way, a high frequency power source or a light source can be used as a plasma source. A high-frequency power supply of a combined type or a capacitively coupled type can be used. Alternatively, an excimer laser, The light source can be an excimer lamp, a low pressure mercury lamp or a synchrotron radiation source. In addition, the second raw material is preferably a raw material that reacts with the first raw material at a temperature close to room temperature. For example, the reaction temperature is from room temperature to 200°C, preferably from 50°C to 150°C. preferable.

[0288] "Exhaust System 185" The exhaust device 185 has an exhaust function and is connected to the flow rate controller 182c. A trap for capturing the discharged raw material may be provided between the discharge port 184 and the flow rate controller 182c. By the way, a dry pump and / or a turbo pump is used for the exhaust device 185. By using a turbo pump, the time required for evacuation can be shortened. The exhausted gases, etc. are abated using abatement equipment.

[0289] Control section 182 The control device supplies a control signal for controlling the flow rate controller or a control signal for controlling the heating mechanism. For example, in a first step, a first raw material is supplied to a surface of a processing substrate. In the second step, a second raw material is supplied to react with the first raw material. The first feedstock reacts with the second feedstock, and the reaction products can be deposited on the surface of the workpiece 10. Cut.

[0290] The amount of the reaction product deposited on the surface of the processed member 10 is determined by the amount of the reaction product deposited in the first step and the second step. The control can be achieved by repeating the steps.

[0291] The amount of the first raw material supplied to the processed member 10 is determined based on the amount of the first raw material adsorbed by the surface of the processed member 10. For example, the amount of the first source material that can be deposited on the surface of the workpiece 10 is limited by the amount of the first source material that can be deposited on the surface of the workpiece 10. The conditions for forming the first raw material are selected, and the second raw material is reacted with the formed monolayer of the first raw material. As a result, a layer containing a very uniform reaction product of the first raw material and the second raw material can be formed. can.

[0292] As a result, various materials are formed on the surface of the workpiece 10 having an intricate structure on the surface. For example, a film having a thickness of 3 nm to 200 nm can be formed on the processed member 1. It can be formed to 0.

[0293] For example, when small holes called pinholes are formed on the surface of the workpiece 10, The film forming material can be deposited inside the pinhole to fill the pinhole.

[0294] In addition, the excess first source material or the excess second source material is exhausted from the film forming chamber 180 by using the exhaust device 185. For example, evacuation may be performed while introducing an inert gas such as argon or nitrogen. stomach.

[0295] 《Deposition chamber 180》 The film forming chamber 180 has an inlet 183 through which the first source material, the second source material, and an inert gas are supplied. and an outlet 184 for discharging the first raw material, the second raw material, and the inert gas.

[0296] The film forming chamber 180 includes a support portion 186 having a function of supporting one or more processed members 10. a heating mechanism 187 having a function of heating the processed member; and a mechanism for loading and unloading the processed member 10. and a door 188 having a function of opening and closing the area in which the cleaning is performed.

[0297] For example, the heating mechanism 187 may be a resistive heater or an infrared lamp.

[0298] The heating mechanism 187 is a mechanism for heating to, for example, 80° C. or higher, 100° C. or higher, or 150° C. or higher. It has Noh.

[0299] The heating mechanism 187 is, for example, at a temperature between room temperature and 200° C., preferably between 50° C. and 15° C. The workpiece 10 is heated to a temperature below 0°C.

[0300] The deposition chamber 180 also includes a pressure regulator and a pressure detector.

[0301] 《Support part 186》 The support portion 186 supports one or more processing members 10. In each case, for example, an insulating film can be formed on one or more processed members 10.

[0302] <Membrane example> The following describes a film that can be fabricated using the ALD film formation apparatus described in this embodiment. Reveal.

[0303] For example, oxides, nitrides, fluorides, sulfides, ternary compounds, metals or polymers. A film can be formed.

[0304] For example, aluminum oxide, hafnium oxide, aluminum silicate, hafnium silicate lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide Zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide Cr, Cr, Cr, Cr, Ni, O, Sn, Oxide, Scandium oxide, Erbium oxide, Vanadium oxide, Indium oxide, etc. It is possible to deposit a film of a material that includes

[0305] For example, aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, Deposits materials including niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride It is possible.

[0306] For example, copper, platinum, ruthenium, tungsten, iridium, palladium, iron, cobalt A film of a material containing titanium or nickel can be formed.

[0307] For example, zinc sulfide, strontium sulfide, calcium sulfide, lead sulfide, calcium fluoride Materials including strontium fluoride or zinc fluoride can be deposited.

[0308] For example, nitrides containing titanium and aluminum, oxides containing titanium and aluminum, oxides containing aluminum and zinc, sulfides containing manganese and zinc, cerium sulfides containing rhenium and strontium, oxides containing erbium and aluminum, Materials including oxides containing tritium and zirconium can be deposited.

[0309] <Film containing aluminum oxide> For example, a gas obtained by vaporizing a raw material containing an aluminum precursor compound may be used as the first raw material. Specifically, trimethylaluminum (TMA, chemical formula: Al(CH3)3 ) or tris(dimethylamido)aluminum, triisobutylaluminum, aluminum Nitris(2,2,6,6-tetramethyl-3,5-heptanedionate) and There can be.

[0310] Water vapor (chemical formula: H2O) can be used as the second feedstock.

[0311] Using the ALD film formation system, aluminum oxide is formed from the first and second raw materials. A film containing the compound can be formed.

[0312] <<Film containing hafnium oxide>> For example, a gas obtained by vaporizing a source material containing a hafnium precursor compound may be used as the first source material. Specifically, tetrakisdimethylamidohafnium (TDMAH, chemical formula: H f[N(CH3)2]4) or hafnium such as tetrakis(ethylmethylamido)hafnium A raw material containing nium amide can be used.

[0313] Ozone can be used as the second feedstock.

[0314] <Film containing tungsten> For example, WF6 gas can be used as the first source material.

[0315] B2H6 gas or SiH4 gas can be used as the second source material.

[0316] This embodiment mode can be freely combined with other embodiment modes.

[0317] (Embodiment 6) In this embodiment, a structure of an oxide semiconductor film will be described.

[0318] Oxide semiconductor films are classified into non-single-crystal oxide semiconductor films and single-crystal oxide semiconductor films. Alternatively, oxide semiconductors can be divided into crystalline oxide semiconductors and amorphous oxide semiconductors, for example. can be.

[0319] As a non-single-crystal oxide semiconductor, CAAC-OS (C Axis Aligne d Crystalline Oxide Semiconductor, polycrystalline oxide Semiconductors include amorphous oxide semiconductors, microcrystalline oxide semiconductors, and amorphous oxide semiconductors. Conductors include single-crystal oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and microcrystalline oxide semiconductors, etc.

[0320] First, we will explain the CAAC-OS film.

[0321] The CAAC-OS film is one of the oxide semiconductor films that has multiple crystal parts aligned along the c-axis. .

[0322] Transmission Electron Microscope (TEM) A combined analysis image of the bright-field image and diffraction pattern of the CAAC-OS film was obtained by a microscope. (also called high-resolution TEM image) allows multiple crystals to be identified. On the other hand, the high-resolution TEM image also clearly shows the boundaries between crystals, i.e., grain boundaries. Therefore, the CAAC-OS film is It can be said that the decrease in electron mobility caused by the grain boundaries is unlikely to occur.

[0323] When a high-resolution TEM image of the cross section of the CAAC-OS film was observed from a direction approximately parallel to the sample surface, It can be seen that the metal atoms are arranged in layers in the crystal part. Each layer of metal atoms is The CAAC-OS film is formed on the surface (also called the surface on which the film is formed) or on the upper surface. The CAAC-OS film has a shape similar to that of the crystalline silicon film, and is aligned parallel to the surface on which the CAAC-OS film is formed or the upper surface.

[0324] On the other hand, a high-resolution TEM image of the plane of the CAAC-OS film was observed from a direction almost perpendicular to the sample surface. They then confirmed that the metal atoms in the crystals were arranged in triangular or hexagonal shapes. However, there is no regularity in the arrangement of metal atoms between different crystal parts.

[0325] X-ray diffraction (XRD) of CAAC-OS film When the structure was analyzed using the device, for example, CAAC-OS with InGaZnO4 crystals was In the out-of-plane analysis of the film, the diffraction angle (2θ) peaked at around 31°. This peak is attributed to the (009) plane of the InGaZnO4 crystal. Therefore, the crystals of the CAAC-OS film have a c-axis orientation, and the c-axis faces the surface on which the film is formed or the upper surface. It can be seen that it is oriented in a substantially vertical direction.

[0326] In addition, the out-of-plane crystal structure of the CAAC-OS film with InGaZnO4 crystals In the analysis by the method, in addition to the peak at 2θ near 31°, a peak also appeared at 2θ near 36°. The peak at 2θ of around 36° may be due to the c-axis orientation in some parts of the CAAC-OS film. The CAAC-OS film contains crystals that do not have the 2θ value of about 31°. It is preferable that the spectrum shows a peak at 2θ of about 36° and does not show a peak at 2θ of about 36°.

[0327] The CAAC-OS film is an oxide semiconductor film with a low concentration of impurities. The oxide semiconductor film is preferably made of silicon or a transition metal element other than the main component of the oxide semiconductor film. The elements that bond to oxygen stronger than the metal elements that form the oxide semiconductor film, such as Zn, By removing oxygen from the oxide semiconductor film, the atomic arrangement of the oxide semiconductor film is disturbed, and the crystallinity is reduced. In addition, heavy metals such as iron and nickel, argon, and carbon dioxide are Since the diameter (or molecular radius) of the ions is large, when the ions are contained inside the oxide semiconductor film, the oxide semiconductor film The impurities contained in the oxide semiconductor film are disturbed, which causes a decrease in crystallinity. Pure materials may act as carrier traps or carrier generation sources.

[0328] The CAAC-OS film is an oxide semiconductor film with a low density of defect states. Oxygen vacancies in semiconductor films act as carrier traps and trap hydrogen. This can become a carrier generation source.

[0329] The low impurity concentration and low defect level density (low oxygen vacancies) are called high purity intrinsic or The term "high-purity intrinsic" refers to a substantially high-purity intrinsic oxide semiconductor. Since the film has a small number of carrier generation sources, the carrier density can be reduced. The transistor including the oxide semiconductor film has an electrical characteristic in which the threshold voltage is negative. (also called normally-on). An oxide semiconductor film having an intrinsic purity has few carrier traps. Transistors using conductor films have little fluctuation in electrical characteristics and are highly reliable. Note that it takes a certain amount of time for charges trapped in the carrier traps in the oxide semiconductor film to be released. The time it takes for the charge to reach the charge limit is long, and it may behave as if it were a fixed charge. A transistor using an oxide semiconductor film having a high density of defect states has unstable electrical characteristics. This may be the case.

[0330] When an oxide semiconductor has impurities or defects, its characteristics may change due to light, heat, etc. For example, impurities contained in oxide semiconductors can act as carrier traps or In addition, oxygen vacancies in oxide semiconductors can act as carrier traps and In some cases, the SiO 2 can become a carrier generation source by capturing hydrogen.

[0331] CAAC-OS, which has few impurities and oxygen vacancies, is an oxide semiconductor with low carrier density. There is. Specifically, 8×10 11 / cm 3 Less than 1 x 10 11 / cm 3 less than, More preferably, 1×10 10 / cm3 Less than 1 x 10 -9 / cm 3 More than Such an oxide semiconductor can be a high-purity intrinsic or The CAAC-OS is essentially a high-purity intrinsic oxide semiconductor. In other words, it can be said that the oxide semiconductor has stable characteristics.

[0332] In addition, the electrical characteristics of transistors using CAAC-OS films are improved by irradiation with visible light or ultraviolet light. Gender variation is small.

[0333] Next, a microcrystalline oxide semiconductor film will be described.

[0334] In the microcrystalline oxide semiconductor film, crystal parts can be confirmed in a high-resolution TEM image. The microcrystalline oxide semiconductor has a region where a crystal part is not clearly observed, and a region where a crystal part is not clearly observed. The crystal parts contained in the film are large, with sizes ranging from 1 nm to 100 nm, or from 1 nm to 10 nm. In particular, the size is between 1 nm and 10 nm, or between 1 nm and 3 nm. The oxide semiconductor film having nanocrystals (nc) is c-OS(nanocrystalline oxide semiconductor In addition, the nc-OS film is called a crystalline structure. For example, in a high-resolution TEM image, the grain boundaries are clearly visible. It may not be possible to verify.

[0335] The nc-OS film is a microscopic region (e.g., a region of 1 nm to 10 nm, especially a region of 1 nm or less). The nc-OS film has a periodic atomic arrangement in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystal parts, and therefore no orientation is observed throughout the film. Therefore, the nc-OS film cannot be distinguished from an amorphous oxide semiconductor film depending on the analysis method. For example, in the case of nc-OS films, X-rays with a diameter larger than that of the crystals are used. When structural analysis is performed using an RD device, the crystal No peaks indicating the crystal plane were detected. Electron diffraction using an electron beam with a diameter of 50 nm or more (also called selected area electron diffraction) When the diffraction pattern is changed to nc-OS film, a halo-like diffraction pattern is observed. Nano-beam electrons are used to measure the size of the crystals using an electron beam with a probe diameter close to or smaller than the size of the crystals. When nanobeam electron diffraction is performed on the nc-OS film, spots are observed. When performing this, a circular (ring-shaped) area of ​​high brightness may be observed. Nanobeam electron diffraction of the nc-OS film revealed multiple spots within the ring-shaped region. may be observed.

[0336] The nc-OS film is an oxide semiconductor film that has higher order than an amorphous oxide semiconductor film. Therefore, the nc-OS film has a lower density of defect states than the amorphous oxide semiconductor film. In the nc-OS film, the crystal orientation is not regular between different crystal parts. The OS film has a higher density of defect states than the CAAC-OS film.

[0337] Next, the amorphous oxide semiconductor film will be described.

[0338] The amorphous oxide semiconductor film has an irregular atomic arrangement in the film and does not have a crystal part. An example is an oxide semiconductor film that has an amorphous state like quartz.

[0339] In the amorphous oxide semiconductor film, no crystalline parts can be confirmed in a high-resolution TEM image. .

[0340] When the structure of the amorphous oxide semiconductor film is analyzed using an XRD device, out-of- In the plane analysis, no peaks indicating crystal planes were detected. When electron diffraction is performed on a semiconductor film, a halo pattern is observed. When nanobeam electron diffraction is performed on a semiconductor film, no spots are observed, and a halo pattern is observed. is observed.

[0341] Note that the oxide semiconductor film has a structure that exhibits physical properties intermediate between the nc-OS film and the amorphous oxide semiconductor film. An oxide semiconductor film having such a structure may be used, particularly in the case of an amorphous like oxide film. Amorphous-like Oxide Semiconductor (a-like OS) The conductive film is called an iconductor film.

[0342] In the a-like OS film, voids are observed in the high-resolution TEM image. In addition, crystals may not be clearly visible in high-resolution TEM images. The a-like OS film has regions where crystals are visible and regions where no crystals are visible. Crystallization occurs when a small amount of electrons is irradiated, which is the level observed in TEM observations, and the growth of the crystals can be seen. On the other hand, in the case of a good quality nc-OS film, the amount of TEM observation is small. Almost no crystallization due to electron irradiation was observed.

[0343] The size of the crystals in the a-like OS film and the nc-OS film was measured using a high-resolution This can be done using TEM images. For example, InGaZnO4 crystals have a layered structure. InGaZnO4, there are two Ga-Zn-O layers between the In-O layers. The device has three In-O layers and six Ga-Zn-O layers, for a total of nine layers aligned along the c-axis. It has a layered structure. Therefore, the spacing between adjacent layers is (009) The lattice spacing (also called the d value) of m. Therefore, focusing on the lattice fringes in the high-resolution TEM image, In the area where the spacing is 0.28 nm or more and 0.30 nm or less, each lattice fringe is In It corresponds to the ab plane of the GaZnO4 crystal.

[0344] In addition, the density of an oxide semiconductor film may differ depending on the structure. If the composition of the conductive film is known, the density can be determined by comparing it with the density of a single crystal with the same composition. For example, the density of a single crystal is The density of the -like OS film is 78.6% or more and less than 92.3%. The density of the nc-OS film and the CAAC-OS film is 92.3% or more of the density of the crystals. Note that an oxide semiconductor film having a density of less than 78% of the density of a single crystal is Therefore, the film formation itself is difficult.

[0345] The above will be explained using a specific example. For example, In the oxide semiconductor film that satisfies the [atomic ratio], single crystal InGaZnO with a rhombohedral crystal structure The density of 4 is 6.357g / cm 3 Therefore, for example, In:Ga:Zn=1:1: In the oxide semiconductor film that satisfies the atomic ratio of 1, the density of the a-like OS film is 5.0 g / cm 3 More than 5.9g / cm3 For example, In:Ga:Zn=1:1 In the oxide semiconductor film that satisfies the atomic ratio of 1:1, the density and CAAC of the nc-OS film -OS film density is 5.9g / cm 3 More than 6.3g / cm 3 It will be less than.

[0346] In some cases, single crystals of the same composition do not exist. In such cases, crystals of different compositions may be used in any ratio. By combining single crystals of the desired composition, the density corresponding to the single crystal of the desired composition can be calculated. The density of a single crystal of a desired composition varies with the ratio of the single crystals of different compositions combined. However, the density should be calculated using as few types of single crystals as possible. It is preferable to calculate the above in combination.

[0347] The oxide semiconductor film may be, for example, an amorphous oxide semiconductor film, an a-like OS film, or a micro- The semiconductor layer may be a stacked film including two or more of a crystalline oxide semiconductor film and a CAAC-OS film. .

[0348] This embodiment mode can be freely combined with other embodiment modes. [Explanation of symbols]

[0349] 10. Processed materials 100 Electronic equipment 102 Display section 103 Electricity storage device 104 Circuit Board 105 Arrow 106 Energy storage device 107 Circuit Board 111 board 112 board 113 board 121 Sealing part 126 Case 131 Fasteners 151 board 152 Display element 153 Circuit section 161 areas 162 areas 163 distance 164 areas 165 areas 171 End 172 End 173 End 174 End 180 Deposition chamber 181a Raw material supply section 181b Raw material supply department 182 Control section 182a Flow Controller 182b Flow Controller 182c Flow Controller 182h heating mechanism 183 Introduction 184 Outlet 185 Exhaust system 186 Support part 187 Heating mechanism 188 Door 201 Positive electrode current collector 202 Cathode active material layer 203 Positive electrode 204 Negative electrode current collector 205 Negative electrode active material layer 206 Negative electrode 207 Separator 208 Electrolyte 209 Exterior body 300 Battery 301 Positive electrode can 302 Anode can 303 Gasket 304 Positive electrode 305 Positive electrode current collector 306 Positive electrode active material layer 307 Negative electrode 308 Negative electrode current collector 309 Negative electrode active material layer 310 Separator 400 Electronic equipment 401 Charger 510 Positive lead electrode 511 Negative lead electrode 512 Welding Area 513 Curved section 514 Sealing part 601 Precursor 602 Precursor 700 Display device 701 Substrate 702 Pixel section 704 Source driver circuit section 705 Substrate 706 Gate driver circuit section 708 FPC terminal section 710 Signal Line 711 Wiring section 712 Sealing material 716 FPC 721 Gate electrode 722 Semiconductor Layer 723 Electrode 724 Electrode 730 Insulating film 732 Sealing film 734 Insulating film 736 Colored film 738 Light-shielding film 750 Transistors 752 Transistor 760 Connection electrode 764 Insulating film 766 Insulating Film 768 Insulating Film 769 Insulating Film 770 Planarizing Insulating Film 772 Conductive Film 774 Conductive Film 775 Liquid crystal elements 776 Liquid crystal layer 778 Structure 780 Anisotropic Conductive Film 782 Light emitting element 784 Conductive Film 786 EL layer 788 Conductive Film 790 Capacitive element 790a Capacitive element 790b Capacitive element 799 Protective film 1700 curved surface 1701 Plane 1702 Curve 1703 Radius of curvature 1704 Center of curvature 1800 Center of curvature 1801 Film 1802 radius of curvature 1803 Film 1804 radius of curvature 1805 Electrodes, electrolytes, etc.

Claims

1. An electronic device worn on a wrist, the electronic device includes a display unit, a secondary battery, a first plate, and a second plate; the display unit, the secondary battery, the first plate, and the second plate are each curved, the first plate has a first portion having a first radius of curvature and a second portion having a second radius of curvature smaller than the first radius of curvature; the second plate is provided between the display unit and the secondary battery, The electronic device, wherein the secondary battery is disposed along the first portion and is not disposed along the second portion.

2. In claim 1, The display unit has a first end and a second end, the secondary battery has a third end and a fourth end; the first end and the third end are fixed; The electronic device, wherein the distance between the second end and the fourth end changes as the electronic device is deformed.

3. In claim 1 or 2, The second plate has an area that is not fixed to a portion other than the display unit and the first plate.

Images