Electric field driving type display device

Abstract

To provide an electric field driving type display device capable of high-quality display, in which the generation of the residual image at the contour of the pixel is prevented.SOLUTION: An insulating film is formed on second electrodes, and a plurality of first electrodes is formed on the insulating film. The first electrode is electrically connected to the second electrode, and the second electrode is disposed overlapping partly with a region between the adjacent two first electrodes. When the display device is viewed from above or below, the first electrode and the adjacent first electrode are provided apart from each other and the second electrode is provided to fill the space between the first electrode and the first electrode.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, a display device, a reflective display device, a driving method thereof, or a method for driving the same. In particular, the present invention relates to a semiconductor device that moves particles in a liquid or gas and operates the device. Related to a body device, a display device, a reflective display device, a driving method thereof, or a manufacturing method thereof Alternatively, a semiconductor device, a display device, a reflective display device, or The present invention relates to a driving method thereof or a manufacturing method thereof. The present invention relates to a device, or an electronic device having the reflective display device. [Background technology]

[0002] In recent years, research into display devices has been actively conducted, and display devices that can be driven with low power consumption have been developed. One of the most popular display devices is the electric field drive type display device (e.g., electronic paper). Dynamic display devices are capable of low power consumption and can retain images even when the power is turned off. It has many advantages and is expected to be used in e-books and posters.

[0003] Various types and methods of electric field driving display devices have been proposed so far. For example, Patent Documents 1 and 2 disclose electrophoretic field-driven display devices using microcapsules. Patent Document 3 discloses an electrophoretic field-driven display device using microcups. Patent Document 4 discloses an electronic device using a particle movement method that uses electronic liquid powder (registered trademark). A field-driven display device is disclosed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2008-276153 [Patent Document 2] Japanese Patent Application Laid-Open No. 2009-86153 [Patent Document 3] Special Publication No. 2006-518881 [Patent Document 4] Japanese Patent Application Laid-Open No. 2009-139855 Summary of the Invention [Problem to be solved by the invention]

[0005] An object of one embodiment of the present invention is to provide an electric field driving display device capable of high-quality display. Alternatively, one embodiment of the present invention is to prevent display defects (for example, afterimages occurring at the outline of pixels). It is an object of the present invention to provide an electric field driving display device in which the phenomenon of the above phenomenon is reduced. The present invention aims to provide an electric field driving display device in which aggregation of particles contained in a display medium is reduced. Another object of one embodiment of the present invention is to provide an electric field display device in which the way an electric field is applied to a display medium is improved. Another object of the present invention is to provide a field-driven display device. An object of the present invention is to provide an electric field driving display device with improved performance.

[0006] The description of these problems does not preclude the existence of other problems. It is not necessary for one embodiment to solve all of these problems. The subject matter will be self-evident from the description, drawings, claims, etc. It is possible to extract other issues from the description, drawings, claims, etc. is. [Means for solving the problem]

[0007] One aspect of the present invention is a method for manufacturing a semiconductor device, comprising: forming a gap between a pixel electrode of a pixel and a pixel electrode of a pixel adjacent to the pixel; This is an electric field driving type display device in which an auxiliary electrode is provided between the electrodes.

[0008] Alternatively, one embodiment of the present invention is a semiconductor device including two adjacent first electrodes, a second electrode, and a third electrode. and a charged particle disposed between two first and second electrodes, and a third electrode is provided between two first electrodes and a second electrode, and is connected to one of the two first electrodes. The third electrode is electrically connected to at least one of the two first electrodes via an insulating film. The third electrode is connected to at least one of the first electrodes via an insulating film. This is an electric field driving display device with some overlapping.

[0009] Alternatively, one embodiment of the present invention is a semiconductor device including two adjacent first electrodes, a second electrode, and a third electrode. and a charged particle disposed between two first and second electrodes, and a third electrode is provided between two first electrodes and a second electrode, and is connected to one of the two first electrodes. The third electrode is electrically connected to at least one of the two first electrodes via an insulating film. The third electrode does not overlap the other of the two first electrodes via an insulating film. This is an electric field driving display device.

[0010] Alternatively, one embodiment of the present invention is a semiconductor device including two adjacent first electrodes, a second electrode, and a third electrode. and a charged particle disposed between two first electrodes and a second electrode, The electrode is provided between the third electrode and the second electrode, and the third electrode is located between the two first electrodes. The third electrode is electrically connected to one of the two first electrodes via an insulating film. The third electrode is at least partially overlapped with the other of the two first electrodes via an insulating film. It is an electric field driving display device in which the two electrodes overlap at least partially.

[0011] Alternatively, one embodiment of the present invention is a semiconductor device including two adjacent first electrodes, a second electrode, and a third electrode. and a charged particle disposed between two first electrodes and a second electrode, The electrode is provided between the third electrode and the second electrode, and the third electrode is located between the two first electrodes. The third electrode is electrically connected to one of the two first electrodes via an insulating film. At least a part of the first electrodes overlaps with the third electrode, and the third electrode overlaps with the other of the two first electrodes via an insulating film. This is an electric field driving display device.

[0012] It should be noted that in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0013] The figure shows an ideal example, and the shape is not limited to that shown in the figure. For example, this includes variations in shape due to manufacturing technology and variations in shape due to errors. is possible.

[0014] In addition, technical terms are often used to describe specific embodiments, etc. However, one aspect of the invention is not to be construed as being limited by technical terminology.

[0015] In addition, undefined terms (including scientific and technical terms such as technical terms or academic terms) It is possible to use the term as meaning equivalent to the general meaning understood by a person skilled in the art. The terms defined in the document, etc. shall be interpreted in a manner consistent with the background of the relevant art. It is preferable. [Effects of the Invention]

[0016] One embodiment of the present invention can provide an electric field driving display device capable of high-quality display. Alternatively, one embodiment of the present invention is to prevent display defects (for example, a phenomenon in which an afterimage occurs in the outline of a pixel). Alternatively, one embodiment of the present invention can provide an electric field driving display device in which It is possible to provide an electric field driving display device in which aggregation of particles contained in the display medium is reduced. Another embodiment of the present invention is an electric field driving display in which the way an electric field is applied to a display medium is improved. Alternatively, one embodiment of the present invention can provide a device that can improve contrast by using an electric field. A driving display can be provided. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 2] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 3] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 4] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 5] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 6] FIG. 1 is a top view of a display device according to one embodiment of the present invention. [Figure 7] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 8] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 9] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 10] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 11] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 12]FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 13] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 14] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 15] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 16] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 17] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 18] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 19] FIG. 1 is a top view of a display device according to one embodiment of the present invention. [Figure 20] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 21] FIG. 1 is a top view of a display device according to one embodiment of the present invention. [Figure 22] FIG. 1 is a top view of a display device according to one embodiment of the present invention. [Figure 23] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 24] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 25] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 26] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 27] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 28] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 29] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 30] FIG. 1 is a top view of a display device according to one embodiment of the present invention. [Figure 31] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 32] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 33] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 34]FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 35] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 36] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 37] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 38] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 39] FIG. 1 is a cross-sectional view of a display device according to one embodiment of the present invention. [Figure 40] FIG. 1 is a top view of a display device according to one embodiment of the present invention. [Figure 41] An electronic device using a display device according to one embodiment of the present invention. [Figure 42] An electronic device using a display device according to one embodiment of the present invention. [Figure 43] FIG. 1 is a top view of a display device according to one embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, the embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following description, and various modifications and variations are possible without departing from the spirit and scope of the present invention. It will be readily apparent to those skilled in the art that various modifications may be made to the details of the present invention. The present disclosure should not be construed as being limited to the following description of the embodiments. In the configurations described, the same parts or parts having similar functions are denoted by the same reference numerals. The same applies to the drawings, and the repeated explanations thereof will be omitted.

[0019] The contents (or even a part of the contents) described in one embodiment may be used in the implementation of the embodiment. Another content (or part of the content) described in the form, and / or one or more other implementations The contents (or a part of the contents) described in the embodiments may be applied, combined, or replaced. You can do things like:

[0020] The contents described in the embodiments are explained using various drawings in each embodiment. This refers to the content stated in the specification or the content stated using the text in the specification.

[0021] It should be noted that a figure described in one embodiment may be used in conjunction with another figure described in that embodiment. Figures (may be parts thereof) and / or figures described in one or more other embodiments (Part of it is fine) can be combined to create more figures. It should be noted that a part of a drawing described in one embodiment may be different from another part of the drawing, Another figure (or a part thereof) described in the embodiment, and / or one or more By combining with the figure (or a part thereof) described in another embodiment of the present invention, , and many more diagrams can be constructed.

[0022] (Embodiment 1) In this embodiment, one embodiment of an electric field driving display device of the present invention will be described with reference to the drawings. do.

[0023] FIG. 1 is a cross-sectional view of one embodiment of the electric field driving display device of the present invention. An insulating film 110 is formed on the insulating film 110. A contact hole is formed in the insulating film 110. A plurality of electrodes 100 and a plurality of electrodes 109 formed on the substrate 10 are electrically connected to each other. The electrode 109 is arranged so as to overlap at least a part of the area between two adjacent electrodes 100. That is, when viewed from the top or bottom of the display device, two adjacent The electrodes 100 are spaced apart, and an electrode 109 is provided in the gap between two adjacent electrodes 100. Here, the electrode 100 functions as a pixel electrode, and the electrode 109 functions as an auxiliary electrode. In this specification, the auxiliary electrode has an area equal to or larger than the area of ​​the pixel electrode. Or, it means an electrode having an area smaller than that of a pixel electrode.

[0024] A layer 102 is formed, placed, or attached between the electrode 100 and the electrode 101. The electrode 101 can function as a counter electrode. The layer 102 is a display layer. Layer 102 can be formed by including particles. The particles contained in O2 can be electrically charged. Such particles are referred to herein as charged particles. An example of the layer 102 is a layer in which microcapsules 104 are dispersed in a dispersant 103. between the electrode 100 and the layer 102 or between the electrode 101 and the layer 103. An adhesive layer, a bonding layer, etc. can be formed between the substrate 02 and the substrate 02.

[0025] As an example of the microcapsule 104, an object in which particles of two colors exist is used. In FIG. 1, particles 105 of one color are positively charged and particles 106 of a different color are negatively charged. The figure shows that the color particles 106 are dispersed in the solvent contained in the capsule. As an example of the solvent, a transparent liquid can be used. A voltage is applied to the electrodes 100 and 101, and a change occurs in the electric field lines between the electrodes 100 and 101. When the particles 105 of one color are charged positively and the particles 106 of a different color are charged negatively, It moves according to the direction of the lines of force (direction of the electric field). That is, a positively charged particle of a certain color 105 and negatively charged particles 106 of different colors move to the electrode 100 side or the electrode 101 side, respectively. This changes the contrast of each pixel, and the image becomes The solvent may be colored. In this example, when two types of particles exist, Although the explanation is given using two color particles, it is also possible to use only one type (one color) of particles. .

[0026] FIG. 2 shows a case where the upper surface of the display device is used as the display surface, and FIG. 3 shows a case where the lower surface of the display device is used as the display surface. A voltage is applied to the electrode 100 and the electrode 101, and a current is generated from the electrode 100. When a change occurs in the electric field lines toward the electrode 101, the microcapsules placed on the electrode 100 The particles in the cell move in response to an electric field 107 directed approximately perpendicularly from electrode 100 to electrode 101. In addition, the microcapsules disposed on the area between the electrodes 100 and the adjacent electrodes 100 The particles in the cell move in response to an electric field 108 directed from electrode 109 to electrode 101 approximately perpendicularly. (Figures 2 and 3).

[0027] Thus, one aspect of the present invention is to detect charged particles (particles) in a liquid. Electrical objects (e.g., shaped, rod-shaped, cylindrical, etc.) move or rotate in response to an electric field. Therefore, a device that uses electrophoresis is called an electrophoretic device. It can be called a migration device (or electrophoresis type device). Display devices that use this technology are often called electrophoretic display devices (or electrophoretic display devices). can.

[0028] Alternatively, one aspect of the present invention is a method for detecting a charged object in a liquid or gas. The phenomenon that particles (particles, rods, cylinders, etc.) move or rotate in response to an electric field. Therefore, the device that uses this phenomenon is called a particle This phenomenon can be used to create a moving device (or particle moving device). A display device that uses this technology is called a particle movement display device (or particle movement type display device). can be done.

[0029] Alternatively, one aspect of the present invention is a method for detecting a charged object in a liquid or gas. This utilizes the phenomenon that particles, rods, cylinders, etc. rotate in response to an electric field. Therefore, a device that utilizes this phenomenon is called a particle rotation device ( Furthermore, there are many devices that utilize this phenomenon. The display device can be called a particle rotation display device (or particle rotation type display device).

[0030] Alternatively, one aspect of the present invention is a method for detecting a charged object in a liquid or gas. The phenomenon that particles (particles, rods, cylinders, etc.) move or rotate in response to an electric field. Therefore, a device that uses this phenomenon is called an electric field This phenomenon can be used to generate a driving force. A display device that uses this technology is called an electric field driving display device (or electric field driving type display device). can be done.

[0031] Alternatively, one aspect of the present invention is a method for manufacturing a microcapsule-like capsule. Charged objects (particles, rods, cylinders, etc.) move within the chamber in response to the electric field. Therefore, it uses such a phenomenon. The device can be called a microcapsule device (or microcapsule-type device). Furthermore, display devices that utilize this phenomenon are called microcapsule displays. The device can be called a microcapsule display device.

[0032] Therefore, the device shown in FIG. 1 can be used as an electrophoresis device, a particle moving device, a particle rotating device, This can be called an electric field driven device or a microcapsule device.

[0033] In order to reduce display defects, when the electrode 101 side is used as the display surface as shown in FIG. It is important to be able to control the aggregation of particles on the electrode 101 side. When the electrode 100 side is used as the display surface, it is possible to control the aggregation of particles on the electrode 100 side. If particle aggregation can be controlled, display defects can be reduced without the need for a light-shielding film. As shown in FIG. 3, the electrode 100 side is used as the display surface. In this case, the transistor and the wiring connected to the electrode 100 or the electrode 109 are transparent. It would be desirable to construct a display using transparent transistors and transparent wiring.

[0034] 1 to 3, the electrode 109 is electrically connected to the electrode 100. The voltages applied to the electrode 109 and the electrode 100 are equal. The thickness of the insulating film 110 is, for example, about 40 μm to 100 μm. The distance from electrode 109 to electrode 101 and the distance from electrode 100 to electrode 10 The distance to 1 can be considered to be substantially the same. When the image is rewritten, the electric fields 107 and 108 applied to the electrode 101 become equal. Therefore, the micro-electrodes 109 arranged in the area between two adjacent electrodes 100 Even in the display area of ​​the black capsule (the area where the electric field 108 is applied), the electrodes placed on the electrodes 100 The display area of ​​the microcapsule (the area to which the electric field 107 is applied) is the same as the display area of ​​the microcapsule. The particles in the capsule move and the aggregation of particles is reduced, so the display reflects the rewriting operation. This makes it possible to realize an electric field driving type display device and an electrophoretic type display device that are less likely to produce an afterimage. a particle movement type display device, a particle rotation type display device, or a microcapsule type display device It can be made.

[0035] If the electrode 109 were not present, an electric field would be applied from the electrode 100 to the electrode 101 in a direction almost perpendicular to the electrode 100. The area where the electric field is applied is the area on the electrode 100, and the area where the electric field is applied is the area on the electrode 101. In the area where the electrodes 100 overlap (areas where the two adjacent electrodes 100 do not overlap), The electric field strength in the area where the electric field curves toward 01 is weaker. When an image is rewritten, an electric field is generated that curves from electrode 100 to electrode 101. In such an area, the state before the rewrite operation may be retained, or the rewrite operation may be In some cases, the particle may drag on the previous state and end up in an intermediate state. This may result in clumping of particles, and the displayed image may have an afterimage. Such a phenomenon occurs in the area where the electrode 100 does not exist, that is, in the area where the pixel electrode is adjacent to the pixel electrode. Therefore, by using the configuration shown in Figures 1 to 3, afterimages and graininess can be reduced. This can reduce aggregation of the particles.

[0036] It is desirable to form the electrode 101 on the entire surface, but in one aspect of this embodiment, this is not the case. For example, the electrode 101 may be in a stripe shape. The electrodes 100 are formed in a stripe shape, and the electrodes 101 are formed in a stripe shape extending in a direction perpendicular to the electrodes 100. Therefore, for example, it can be used as a passive matrix display device (Fig. 4). It is also possible to do so.

[0037] An example of a top view of a passive matrix display device is shown in Figure 6. First, an electrode 109 is formed. (FIG. 4, FIG. 6(A)). The electrode 109 can function as an auxiliary electrode. An insulating film 110 is formed on the electrode 109 (FIG. 4). A contact hole 113 is formed in the insulating film 110. Then, a stripe-shaped electrode 100 electrically connected to the electrode 109 is formed (FIG. 4 , FIG. 6(B)). The electrode 100 can function as a pixel electrode. A layer 102 including a display medium is formed on the substrate (FIG. 4). A stripe-shaped electrode 101 is formed on the substrate (below the substrate facing the substrate on which the 6(C)). The electrode 101 can function as a counter electrode. 6(C). FIG. 6(D) shows the contact of FIG. 6(B). FIG. 43(A) is a diagram showing the hole 113 and the electrode 100, which is similar to the stripe of FIG. 6(C). 1 is a diagram showing an excerpt of a loop-shaped electrode 101.

[0038] When the passive matrix display device is viewed from above or below, the electrode 109 is formed over the entire pixel portion. Or, the electrode 100 is formed. In other words, the electrode 101 is formed. An electrode 109 or an electrode 100 is formed in the entire area facing the area (FIG. 6(B)). With this configuration, the electrode 101 can function as a counter electrode. A nearly uniform electric field is applied to the overlapping area, making it possible to obtain a display device with reduced display defects. do.

[0039] It is also possible to provide the electrode 101 with an electrode that can function as an auxiliary electrode. A passive matrix display device is provided with an electrode 114 electrically connected to the electrode 101. An example of a top view of the device is shown in Figure 43(C). Figure 5 is a diagram showing the KL cross section of Figure 43(C). An insulating film 110 is formed on the electrode 109. A contact hole 113 is formed in the insulating film 110. The electrode 100 is formed on the electrode 100 and electrically connected to the electrode 109. A layer 102 including a medium is formed. On the layer 102 including a display medium (a substrate on which an electrode 109 is provided), An electrode 101 is formed on the substrate (below the substrate facing the plate) (FIG. 5, FIG. 43(B)). An insulating film 115 is formed on the insulating film 115, and an electrode is formed in a contact hole 116 formed in the insulating film 115. An electrode 114 is formed so as to be electrically connected to 101 (FIG. 5, FIG. 43(C)). As shown in the figure, a passive matrix display device in which the electrode 101 or the electrode 114 is formed over the entire pixel area is In other words, the electrode 100 is formed in the entire area opposite to the area where the electrode 100 is formed. 101 or electrode 114 can be formed. A nearly uniform electric field is applied to the entire element, resulting in a display device with reduced display defects. 43(D) shows the contact hole 116 and the electrode 114 of FIG. 43(C). This is a diagram showing the above.

[0040] As shown in FIG. 7, the electrode 109 can also function as an electrode of a storage capacitor. FIG. 7 shows a configuration in which wiring 111 and an insulating film 112 are added to the configuration shown in FIG. 1. 11 may also function as a capacitance wiring. The other configurations are the same as those in FIG. In FIG. 7, the electrode 109 is a and is disposed at a position at which it at least partially overlaps the region between the wiring 1 and the insulating film 112. In this way, the electrode 109 is arranged at a position where it overlaps with the electrode 11. It is possible for the electrode to have both the function as a cathode and the function as an auxiliary electrode.

[0041] The area of ​​electrode 100 and the area of ​​electrode 109 may be approximately equal. This is expressed by the width A' of the electrode 109 and the width B' of the electrode 100 being approximately equal. Alternatively, the distance A between the electrode 109 and the adjacent electrode 109 and the distance B between the electrode 100 and the adjacent electrode 10 0 and the distance B may be approximately equal. Therefore, the capacitance value can be increased. However, one aspect of this embodiment is not limited thereto.

[0042] It is desirable that the thickness D of the insulating film 112 is smaller than the thickness C of the insulating film 110. This allows the surface of the electrode 100 to be more porous. However, one aspect of this embodiment is not limited thereto.

[0043] The distance A between the adjacent electrodes 109 is greater than the thickness D of the insulating film 112. This makes it possible to increase the capacitance value. However, the embodiment is not limited to this.

[0044] The distance B between the adjacent electrodes 100 is greater than the thickness C of the insulating film 110. Alternatively, the distance B between the adjacent electrodes 100 is preferably It is preferable that the distance B between the adjacent electrodes 100 is larger than the thickness H. is preferably larger than the film thickness G of the electrode 109. The distance B between the electrode 100 and the wiring 111 is preferably greater than the film thickness F of the wiring 111. By increasing the distance B between the adjacent electrodes 100, even if the electrode 100 is Even if dust gets between the electrode 100 and the adjacent electrode 00, a short circuit can be prevented. Even if the distance B between the electrode 100 and the substrate 100 is large, a uniform electric field can be applied according to one aspect of the present embodiment. However, one aspect of this embodiment is not limited to these.

[0045] The diameter E of the particle is preferably smaller than the distance A between the adjacent electrodes 109. Alternatively, the diameter E of the particle is smaller than the distance B between the adjacent electrodes 100. This makes it possible to realize a high-definition display. The embodiment is not limited to these.

[0046] It is preferable that the thickness F of the wiring 111 is larger than the thickness H of the electrode 100. The thickness F of the wire 111 is preferably larger than the thickness I of the electrode 101. It is possible to reduce the resistance of the wire 111. However, one aspect of the present embodiment is not limited to this. Not determined.

[0047] It is preferable that the thickness G of the electrode 109 is larger than the thickness H of the electrode 100. It is preferable that the thickness G of the electrode 109 is larger than the thickness I of the electrode 101. However, one aspect of the present embodiment is not limited to these. Not determined.

[0048] It is preferable that the thickness I of the electrode 101 is larger than the thickness H of the electrode 100. This makes it possible to reduce the resistance of the electrode 101. However, one aspect of this embodiment is Not limited.

[0049] As shown in FIG. 8, one embodiment of the electric field driving display device of the present invention is a display device in which an insulating film 2 is formed on an electrode 200. 01 is formed, a contact hole is provided in the insulating film 201, and a The electrode 202 may be electrically connected to the electrode 200. , and are arranged so as to overlap at least a part of the region between two adjacent electrodes 200. That is, when viewed from the top or bottom of the display device, two adjacent electrodes 200 are spaced apart. An electrode 202 is provided in the gap between two adjacent electrodes 200. Here, the electrode 200 functions as a pixel electrode, and the electrode 202 functions as an auxiliary electrode. In this specification, the auxiliary electrode has an area equal to or larger than the area of ​​the pixel electrode. This means that the electrode is smaller than the product.

[0050] A layer 203 is formed, disposed, or attached between the electrode 202 and the electrode 204. The electrode 204 can function as a counter electrode. Layer 203 can be formed by including particles. The particles contained in O3 can be electrically charged. Such particles are referred to herein as charged particles. An example of the layer 203 is a layer in which microcapsules are dispersed in a dispersant and fixed. Between the electrode 202 and the layer 203 or between the electrode 204 and the layer 203, It is possible to form an adhesive layer, a bonding layer, etc.

[0051] In FIG. 8, the electrode 200 and the electrode 202 are electrically connected. The voltage applied to the electrode 202 is equal to that applied to the electrode 203. The thickness of the layer 203 is, for example, 40 μm to 100 μm, whereas the thickness of the insulating film 201 is, for example, several nm to 2 μm. Therefore, the distance from electrode 200 to electrode 204 and the distance from electrode 202 to electrode 204 are Therefore, the distances at the points where the display image is When a rewriting operation is performed, an electric field from the electrode 200 to the electrode 204 and an electric field from the electrode 202 to the electrode 204 are generated. The electric field toward the electrode 204 is equivalent to that toward the microelectrode 200. Similar to the particles in the capsule, the particles are deposited on the area between two adjacent electrodes 200 (on the electrodes 202). The particles within the microcapsules can also move, reducing particle aggregation. That is, the display area of ​​the microcapsules arranged on the electrode 200 and the display area of ​​the microcapsules arranged on the electrode 202 The display area of ​​the microcapsule reflects the rewrite operation in both cases. This makes it possible to manufacture an electric field driving display device or the like that is less likely to produce an afterimage. do.

[0052] As shown in FIG. 9, the electrode 202 can also function as an electrode of a storage capacitor. FIG. 9 shows a configuration in which wiring 205 and insulating film 206 are added to the configuration shown in FIG. 8. The wiring 205 may also function as a capacitance wiring. In FIG. 9, the electrode 202 is the electrode 200 adjacent to the electrode 20 0 and the insulating film 201 and the insulating film 202 are disposed at a position at which the insulating film 201 and the insulating film 202 overlap at least partially. The electrode 20 is disposed at a position where it overlaps with the wiring 205 via the film 206. 2 can function both as a storage capacitor electrode and as an auxiliary electrode. do.

[0053] The area of ​​the electrode 200 and the area of ​​the electrode 202 may be approximately equal. This is expressed by the fact that the width B'2 of the electrode 202 and the width A'2 of the electrode 200 are approximately equal. Alternatively, the distance B2 between the electrode 202 and the adjacent electrode 202 and the distance B3 between the electrode 200 and the adjacent electrode 202 may be The distance A2 between the electrode 200 and the electrode 200 may be approximately equal. The area of ​​the electrode 200 and the electrode 202 can be increased. However, one aspect of this embodiment is not limited thereto.

[0054] It is desirable that the thickness D2 of the insulating film 206 is smaller than the thickness C2 of the insulating film 201. This makes it possible to increase the capacitance value. However, one aspect of this embodiment is not limited thereto. stomach.

[0055] The distance A2 between the electrodes 200 and the adjacent electrodes 200 is greater than the thickness D2 of the insulating film 206. This makes it possible to increase the capacitance value. One aspect of the form is not limited to this.

[0056] The distance B2 between the electrodes 202 and the adjacent electrodes 202 is greater than the thickness C2 of the insulating film 201. Alternatively, the distance B2 between the adjacent electrodes 202 is preferably 2. Alternatively, the thickness of the electrode 202 and the adjacent electrode 202 is preferably larger than the thickness H2 of the electrode 202. The distance B2 is preferably greater than the film thickness G2 of the electrode 200. The distance B2 between the wiring 205 and the adjacent electrode 202 is preferably greater than the film thickness F2 of the wiring 205. By increasing the distance B2 between the electrode 202 and the adjacent electrode 202, This can reduce short circuits between the electrode 202 and the adjacent electrode 20. Even if the distance B2 between the electrode 1 and the electrode 2 is large, a uniform electric field can be applied according to one aspect of the present embodiment. However, one aspect of this embodiment is not limited thereto.

[0057] The particle diameter E2 is smaller than the distance A2 between the electrodes 200 and the adjacent electrodes 200. Alternatively, the diameter E2 of the particle is preferably smaller than the distance B2 between the adjacent electrodes 202. This makes it possible to realize a high-definition display. However, one aspect of the present embodiment is not limited to these.

[0058] The thickness F2 of the wiring 205 is preferably larger than the thickness H2 of the electrode 202. It is preferable that the film thickness F2 of the wiring 205 is larger than the film thickness I2 of the electrode 204. This makes it possible to reduce the resistance of the wiring 205. However, in one aspect of this embodiment, Not limited to these.

[0059] Preferably, the thickness G2 of the electrode 200 is greater than the thickness H2 of the electrode 202. Preferably, the thickness G2 of the electrode 200 is greater than the thickness I2 of the electrode 204. This makes it possible to reduce the resistance of the electrode 200. However, in one aspect of this embodiment, Not limited to these.

[0060] It is preferable that the thickness I2 of the electrode 204 is larger than the thickness H2 of the electrode 202. This makes it possible to reduce the resistance of the electrode 204. However, in one aspect of this embodiment, This is not limited to:

[0061] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. This can be done.

[0062] (Embodiment 2) In this embodiment, a configuration example of an electric field driving display device of the present invention will be described.

[0063] Examples of the configuration of the electric field driving display device include electrophoresis, particle rotation, and particle migration. In this way, in an electric field driving display device, particles, rods, or The reflectivity can be changed by moving or rotating the cylinder. In the first embodiment, a microcapsule electrophoresis method is applied. An electric field driving type display device will be described. In this embodiment, a microcup type electrophoretic display device We will explain the formula and electronic liquid powder (registered trademark) method.

[0064] The microcup type electrophoresis method will be explained with reference to Figs. The microcup array is made of a UV-curable resin or the like and has a plurality of recesses. Charged pigment particles 603 dispersed in a conductive solvent 602 are filled in the container, and the container is sealed with a sealing layer 604. 10(A) and (B) show a substrate 600 having an electrode 605 formed thereon. An insulating film 606 is formed on the electrode 605, and a contact hole is formed in the insulating film 606. An electrode 607 electrically connected to the electrode 605 is formed, and the microcups are formed on the electrode 607. The array is arranged, electrodes 608 are formed on the microcup array, and the substrate 6 is formed on the electrodes 608. Electrode 607 can function as a pixel electrode. Electrode 605 can function as an auxiliary electrode. 10(B) shows the case where a non-colored solvent is used as the dielectric solvent 602. In Figure 10(A) and (B), the charged Although the illustration shows a case where one type of pigment particles is used, two or more types of charged pigment particles may be used. .

[0065] The microcups have a wall structure that separates the cells, making them sufficiently durable against impact and pressure. In addition, the contents of the microcups are sealed and therefore not affected by environmental changes. For the electric field driving display device using the microcup type electrophoresis method, The electric field between the electrode capable of functioning as a counter electrode and the electrode capable of functioning as a counter electrode The charged pigment particles move in response to the change in the temperature, and particles may aggregate at the corners of the microcups. This may cause afterimages.

[0066] The electric field driving type display device shown in FIGS. 10(A) and 10(B) has a pitch P1 of the microcups and , and the pitch P2 of the electrodes that can function as pixel electrodes are substantially equal. In this embodiment, the length of the upper side of the microcup and the upper side of the microcup The sum of the thickness and the wall thickness corresponds to the pitch of the microcups. For example, in Figures 10(A) and 10(B), ), the pitch P2 of the microcups is the length of the top side of the microcups J1 and the The thickness of the upper wall of the cup is equivalent to the sum of the thickness L and the thickness of the upper wall of the cup. When a microcup array is constructed by the above, the vertical or horizontal length of the constituent unit The pitch of the microcups is sometimes called the microcup pitch. This includes one recess among the multiple recesses that the cap has.

[0067] An electrode 607 is formed on the top surface of the microcup in a size corresponding to the microcup. It overlaps with the top surface of the microcup, and in the cross section, the length of the top edge of the microcup is approximately equal to J1. The electrode 607 is formed so that the electrode 607 is easily 5 is formed on the wall and the periphery of the microcup. This allows the electric field to be applied uniformly across the entire area where the particles move. This can reduce particle aggregation.

[0068] The thickness L of the upper wall of the microcup is larger than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0069] The thickness L of the upper wall of the microcup and the distance M between the electrodes 607 and the adjacent electrodes 607 are This allows a uniform electric field to be applied to the entire area where the particles move. can be done.

[0070] The electric field driving type display device shown in FIGS. 11(A) and 11(B) has a pitch P1 of the microcups. and the pitch P2 of the electrodes that can function as pixel electrodes are approximately equal. However, the structure is different from that shown in FIGS. 10(A) and (B).

[0071] FIG. 11(A) shows the case where a non-colored solvent is used as the dielectric solvent 602. (B) shows a case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0072] An electrode 607 is formed on the bottom surface of the microcup in a size corresponding to the size of the microcup. It overlaps with the bottom surface of the microcup, and in the cross section, the length of the bottom of the microcup is approximately equal to J2. The electrode 607 is formed so that the electrode 607 is easily 5 is formed. By using this structure, the electric field is uniformly distributed on the wall of the microcup. This can reduce particle aggregation.

[0073] The distance M between the electrode 607 and the adjacent electrode 607 is smaller than the thickness L of the upper wall of the microcup. This allows an electric field to be applied to the wall of the microcup, preventing particle aggregation. Alternatively, the strength of the walls of the microcups can be increased.

[0074] The thickness L of the upper wall of the microcup is larger than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0075] The thickness K of the lower wall of the microcup, the distance M between the electrodes 607 and the adjacent electrodes 607, are approximately equal. This allows for efficient application of an electric field.

[0076] 10 and 11, the pitch P1 of the microcups and the thickness of the microcups that function as pixel electrodes are shown. The electric field driving display device having the same structure as the electrode pitch P2 has been described. In FIG. 12, the pitch P1 of the microcups is set to the pitch of the electrodes that can function as pixel electrodes. An electric field driving display device having a structure where the pitch is twice the pitch P2 will be described. Although the example shows a case where the pitch P1 is twice the pitch P2, it may be an integer multiple of 2 or more. By multiplying the number by an integer, it becomes easier to make the display uniform.

[0077] FIG. 12(A) shows the case where a non-colored solvent is used as the dielectric solvent 602. (B) shows a case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0078] In FIGS. 12(A) and 12(B), the end of the electrode 607 is attached to the end of the upper wall of the microcup. It is formed at the corresponding position.

[0079] The thickness L of the upper wall of the microcup is larger than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0080] The distance between the electrodes 607 and the adjacent electrodes 607 is smaller than the thickness L of the upper wall of the microcup. This allows a uniform electric field to be applied to the entire area where the particles move. can be done.

[0081] The distance between the electrodes 607 and the adjacent electrodes 607 is smaller than the thickness K of the lower wall of the microcup. This allows a uniform electric field to be applied to the entire area where the particles move. can be done.

[0082] The electric field driving type display device shown in FIGS. 13(A) and 13(B) has a pitch P1 of the microcups. However, it has a structure that is twice the pitch P2 of the electrodes that can function as pixel electrodes. , which has a different structure from that shown in FIGS. 12(A) and (B).

[0083] FIG. 13(A) shows the case where a non-colored solvent is used as the dielectric solvent 602. (B) shows a case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0084] In Figures 13(A) and (B), the end of the electrode 607 is attached to the end of the lower wall of the microcup. It is formed at the corresponding position.

[0085] The thickness L of the upper wall of the microcup is larger than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0086] The distance between the electrodes 607 and the adjacent electrodes 607 is smaller than the thickness L of the upper wall of the microcup. This allows a uniform electric field to be applied to the entire area where the particles move. can be done.

[0087] The distance between the electrodes 607 and the adjacent electrodes 607 is smaller than the thickness K of the lower wall of the microcup. This allows a uniform electric field to be applied to the entire area where the particles move. can be done.

[0088] The electric field driving type display device shown in FIGS. 14(A) and 14(B) has a pitch P1 However, it has a structure in which the pitch P2 of the electrodes that can function as pixel electrodes is half that of the electrodes. In addition, FIG. 14 illustrates a case where the pitch P1 is half the pitch P2. However, it is possible to make it 1 / 2 an integer greater than or equal to 2. This makes it easier to make the display uniform.

[0089] FIG. 14(A) shows the case where a non-colored solvent is used as the dielectric solvent 602. (B) shows a case where a colored solvent such as red or blue is used as the dielectric solvent 602.

[0090] An electrode 607 is formed on the upper surface of the two microcups in a size corresponding to the size of the electrodes. That is, the upper side of the two microcups and the area between the two microcups in the cross-sectional view The electrode 607 is formed so as to have a length approximately equal to the total length J3 of the upper width of the wall. By adopting such a structure, an electric field is uniformly applied to the wall of the microcup and the periphery of the wall. This allows a uniform electric field to be applied to the entire area where the particles move, reducing particle aggregation. can be reduced.

[0091] The thickness L of the upper wall of the microcup is larger than the thickness K of the lower wall of the microcup. This makes it possible to increase the strength of the walls of the microcups.

[0092] The thickness L of the upper wall of the microcup and the distance M between the electrodes 607 and the adjacent electrodes 607 are This allows a uniform electric field to be applied to the entire area where the particles move. can be done.

[0093] The electric field driving type display device shown in FIGS. 15(A) and 15(B) has a pitch P1 of the microcups. However, the pitch P2 of the electrodes that can function as pixel electrodes is half that of the electrodes. However, the structure is different from that shown in FIGS. 14(A) and (B).

[0094] An electrode 607 is formed on the bottom surface of the two microcups in a size corresponding to the bottom surface of the two microcups. That is, the bottom edges of the two microcups and the gap between the two microcups in the cross-sectional view The electrode 607 is formed so as to have a length J4 that is approximately equal to the total width of the lower side of the wall. By adopting such a structure, an electric field is uniformly applied to the wall of the microcup and the periphery of the wall. This allows a uniform electric field to be applied to the entire area where the particles move, reducing particle aggregation. can be reduced.

[0095] The thickness of the upper wall of the microcup is L, and the thickness of the lower wall of the microcup is K. It has become.

[0096] The thickness K of the lower wall of the microcup, the distance M between the electrodes 607 and the adjacent electrodes 607, are equal. This allows for efficient application of an electric field.

[0097] As shown in FIGS. 10 to 15, at least one electrode 607 is formed in the region between the adjacent electrodes 607. By forming the electrode 605 so that it overlaps with the charged pigment particles 603, It is possible to reduce the accumulation at the corners of the cross-cup 601, and it is an electric field driven type that is less likely to cause afterimages. However, an electrophoretic display device to which one embodiment of the present invention can be applied can be manufactured. The electric field-driven display device is not limited to using microcups. A structure in which particles are blocked from moving to the outside by some object, restricting the movement of particles. It can be used for everything that has

[0098] The electronic liquid powder (registered trademark) method will be described with reference to FIGS. 16 to 18. (registered trademark) is a very free-flowing solid that exhibits flowability and has both fluid and particle properties. In this method, the cells are separated by partition walls 701, and electronic liquid powder (electron powder) is placed in the cells. 7. The electronic powder (registered trademark) 702 and the electronic liquid powder (registered trademark) 703 are arranged.

[0099] The electric field driving display device shown in FIGS. 16(A) and 16(B) has a cell pitch P1 and a pixel electrode The pitch P2 of the electrodes that can function as a In the embodiment, the sum of the length (width) of the cell and the length (width) of the partition wall corresponds to the cell pitch. For example, in FIGS. 16(A) and 16(B), the cell pitch P1 is the cell length It corresponds to the sum of the (width) J5 and the length (width) N of the partition wall.

[0100] 16A and 16B show a structure in which an electrode 704 is formed on a substrate 700 and an insulating film is formed on the electrode 704. A contact hole is formed in the insulating film 705, and the insulating film 705 is electrically connected to the electrode 704. A connected electrode 706 is formed, and a cell containing electronic liquid powder (registered trademark) is arranged on the electrode 706. The display device is configured by forming an electrode 707 on the cell and forming a substrate 708 on the electrode 707. FIG. 16(A) shows the electronic liquid powder (registered trademark) 702 and the electronic liquid powder (registered trademark) 703. In Fig. 16(B), the white particles and black particles are used. 702 and 703 are colored materials other than white and black. Although the present invention shows a case where particles are used, it is not limited to this and only one type of particle may be used. .

[0101] The electrode 706 is formed to a size corresponding to the cell. The electrode 706 is formed so as to have a length (width) J5 approximately equal to the length (width) J5 of the electrode 706. The electrodes 704 are electrically connected to each other. The electric field is also applied uniformly around the wall. This allows a uniform electric field to be applied to the entire area where the particles move. This can reduce particle aggregation.

[0102] The length (width) N of the partition wall and the distance M between the adjacent electrodes 706 are approximately equal. This allows a uniform electric field to be applied to the entire area where the electronic liquid powder (registered trademark) moves. This can be done.

[0103] In the electric field driving display device shown in FIGS. 17(A) and 17(B), the cell pitch P1 is The pitch P2 of the electrodes is twice as large as that of the electrodes that can function as a cell. The length (width) J5 of the hole is twice the size of the electrode 706. Although the figure shows a case where the pitch is twice the pitch P2, it can be an integer multiple of 2 or more. By multiplying the number by an integer, it becomes easier to make the display uniform.

[0104] FIG. 17(A) shows the electronic liquid powder (registered trademark) 702 and the electronic liquid powder (registered trademark) 703. In Fig. 17(B), the white particles and black particles are used. Registered trademark) 702 and electronic liquid powder (registered trademark) 703 are colored particles in two colors other than white and black. Although the present invention is not limited to this example, it is also possible to use only one type of particle.

[0105] The distance M between the adjacent electrodes 706 is smaller than the length (width) N of the partition wall. This applies a uniform electric field to the entire area where the electronic liquid powder moves. It is possible.

[0106] In the electric field driving display device shown in FIGS. 18(A) and 18(B), the cell pitch P1 is The pitch P2 of the electrodes that can function as a That is, the electrode 706 is formed so as to be approximately equal to the total length J6 of the two cells and the partition wall therebetween. In FIG. 18, the pitch P1 is half the pitch P2. Although the figure shows the ratio as 1 / 2, it is possible to set it to 1 / 2 or a larger integer. By doubling the number of pixels, it becomes easier to make the display uniform.

[0107] FIG. 18(A) shows the electronic liquid powder (registered trademark) 702 and the electronic liquid powder (registered trademark) 703. In Fig. 18(B), the white particles and black particles are used. Registered trademark) 702 and electronic liquid powder (registered trademark) 703 are colored particles in two colors other than white and black. Although the present invention is not limited to this example, it is also possible to use only one type of particle.

[0108] The length (width) N of the partition wall and the distance M between the adjacent electrodes 706 are approximately equal. This allows a uniform electric field to be applied to the entire area where the electronic liquid powder (registered trademark) moves. This can be done.

[0109] For electric field driving display devices that use the electronic liquid powder (registered trademark) method, The electronic liquid powder moves in response to changes in the electric field between the opposing electrodes, forming a pixel. If the electrode is not placed on the surface of the electrode, an afterimage is likely to occur. The electrode 70 is positioned so that it at least partially overlaps the area between the electrode 706 and the adjacent electrode 706. By forming 4, an electric field is applied uniformly to the electronic liquid powder (registered trademark) in the cell, and the remaining It is possible to manufacture an electric field driving display device that is less likely to produce images.

[0110] In this embodiment, the microcup type electrophoresis method and the electronic liquid powder method are used. However, the method to which one embodiment of the present invention can be applied is not limited to these. For example, Electrowetting, toner, twist ball, etc. can be applied. It is possible.

[0111] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. This can be done.

[0112] (Embodiment 3) In this embodiment, one embodiment of an electric field driving display device of the present invention will be described with reference to the drawings. do.

[0113] FIG. 19 shows the top view of an active matrix electric field driving display device to which the configuration of FIG. 7 is applied. 20(A) shows a cross section of FIG. 19 taken along CD, and FIG. 20(B) shows a cross section of FIG. 19 taken along EF. 19 shows electrodes 301 to 303, wiring 304, conductive layers 309 to 309, and 14, conductive layers 335 to 337, wiring 341, conductive layers 342 to 344, semiconductor Layer 306 to semiconductor layer 308, semiconductor layer 332 to semiconductor layer 334, electrode 316 to electrode 318 , electrodes 338 to 340, electrodes 345 to 347, gate line 330 and gate line 33 1 is shown, and other configurations are omitted.

[0114] The electrodes 301 to 303 can function as gate electrodes. The conductive layer 310 and the wiring 341 can function as a capacitance wiring. 312, conductive layer 313, conductive layers 335 to 337, and conductive layers 342 to 344 The electrodes 316 to 318 and the electrodes 338 to 339 can function as auxiliary electrodes. The electrode 340 and the electrodes 345 to 347 can function as pixel electrodes. Conductive layer 309, conductive layer 311, and conductive layer 314 can function as source lines. do.

[0115] 20(A) and (B) will be described. First, a conductive film is formed on a substrate 300. The conductive film is processed into a desired shape to form electrodes 301 to 303 and wiring 304. The plate 300 can be a glass substrate, a plastic substrate, or the like. The conductive film 303 and the wiring 304 are made of titanium, molybdenum, tantalum, chromium, tungsten, or the like. Stainless steel, aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, Sodium, germanium, indium tin oxide (ITO), indium zinc oxide (hereinafter referred to as IZO), zinc oxide (ZnO), or tin oxide (SnO) are used for sputtering. It can be formed in a single layer or multiple layers by coating or CVD. Before the formation of the insulating film, an underlayer may be formed on the substrate 300. The underlayer may be made of a silicon oxide material. The insulating film can be formed in a single layer or in a multilayer structure using a silicon nitride material film or a silicon nitride material film. The silicon oxide material is silicon oxide whose main components are oxygen and silicon. Alternatively, silicon oxide may contain nitrogen and the oxygen content may be higher than the nitrogen content. Silicon nitride materials are silicon nitrides whose main components are nitrogen and silicon. Silicon nitride or silicon nitride contains oxygen, and the nitrogen content is higher than the oxygen content. The gate line 330, the gate line 331, and the wiring 34 shown in FIG. 1 is formed in the same process as the electrodes 301 to 303 and the wiring 304.

[0116] An insulating film 305 is formed on the electrodes 301 to 303, the wiring 304, and the substrate 300. The insulating film 305 is formed by plasma CVD using a silicon oxide material or a silicon nitride material. The insulating film 305 can be formed by a gate insulating film. The insulating film 305 can also function as an insulating film for a storage capacitor. It is possible to have all the functions.

[0117] On the insulating film 305, a semiconductor layer 306 (semiconductor layer 306a and semiconductor layer 306b) is formed. layer 307 (semiconductor layer 307a and semiconductor layer 307b), semiconductor layer 308 (semiconductor layer 308 The semiconductor layer 306 is connected to the electrode 306 via the insulating film 305. The semiconductor layer 307 is formed at a position overlapping with the electrode 302 via the insulating film 305. The semiconductor layer 308 is formed at a position overlapping the electrode 303 via the insulating film 305. The semiconductor layers 332 to 334 shown in FIG. It is formed in the same process as the layer 308 .

[0118] The semiconductor layers 306 to 308 are made of non-crystalline silicon such as amorphous silicon. semiconductor layers, microcrystalline silicon, polycrystalline silicon, single crystal silicon, gallium arsenide (GaA Compound semiconductors such as ZnO, In-Ga-Zn-O, and other oxide semiconductors Alternatively, an organic semiconductor material or the like can be used. Here, an amorphous The case where silicon is used will be described.

[0119] The semiconductor layer 306a, the semiconductor layer 307a, and the semiconductor layer 308a are made of amorphous silicon. It can be formed by photolithography, inkjet printing, or the like using a film. The semiconductor layer 306a, the semiconductor layer 307a, and the semiconductor layer 308a are formed by a transistor. It is possible to include a portion that functions as a channel region of the transistor.

[0120] Amorphous silicon is formed into semiconductor layers 306a, 307a, and 308a. When used as a semiconductor device, the uniformity of the transistor characteristics is high and the manufacturing cost is low. In particular, it is advantageous when transistors are mounted on large substrates with a diagonal length of more than 500 mm. This is effective when creating a printer.

[0121] The semiconductor layer 306b, the semiconductor layer 307b, and the semiconductor layer 308b are made of silicon containing phosphorus or the like. The conductive layer 306a has a higher conductivity than the conductive layer 307a, the conductive layer 308a, and the conductive layer 308b. The semiconductor layer 306b, the semiconductor layer 307b, and the semiconductor Layer 308b can be used as a buffer layer or an n + It can also be expressed as a layer. The semiconductor layer 306b, the semiconductor layer 307b, and the semiconductor layer 308b function as a source and a drain. It is possible to include functional parts.

[0122] Next, the conductive layers 309 to 314 are formed. The conductive layer 309 is a The conductive layer 310 may include a portion that functions as one of the source and drain. The conductive layer 311 may include a portion that functions as the source and drain. The conductive layer 312 may include a portion that functions as one of the source and drain. The conductive layer 313 may include a portion that functions as the other of the source and drain. The conductive layer 314 may include a portion that functions as one of the source and drain. The conductive layers 309 to 314 may include a portion that functions as the other. Molybdenum, Tantalum, Chromium, Tungsten, Aluminum, Neodymium, Copper, Silver, Gold, platinum, niobium, silicon, zinc, iron, barium, germanium, ITO, IZO, acid Using zinc oxide (ZnO) or tin oxide (SnO), sputtering or CVD methods The conductive layer 335 to the conductive layer 336 shown in FIG. The layer 337 and the conductive layers 342 to 344 are formed in the same process as the conductive layers 309 to 314. It is done.

[0123] An insulating film 315 is formed as a single layer or multiple layers on the conductive layers 309 to 314. 15 is a silicon oxide or silicon nitride material, etc., and is produced by plasma CVD or The insulating film 315 can be formed by a sputtering method or the like. It may be formed as a single layer or multiple layers. For example, acrylic, polyimide, polyamide, polyimide The insulating film 31 may be made of a material such as amide, benzocyclobutene, or epoxy. The insulating film 315 may have a laminated structure of an organic material and an inorganic material. A material having a light-shielding property or a color filter may be used. black, organic resins containing black pigments, etc.

[0124] A contact hole is opened in the insulating film 315, and an electrode 31 electrically connected to the conductive layer 310 is formed. 6, an electrode 317 electrically connected to the conductive layer 312, and an electrode 318 electrically connected to the conductive layer 313; The electrode 318 is formed. The electrodes 338 to 340 and the electrodes 345 to 346 shown in FIG. The electrode 347 is formed in the same process as the electrodes 316 to 318.

[0125] In the case of a structure in which display is made on the opposing electrode side, the electrodes 316 to 318 are made of a material that absorbs light. For example, chromium, titanium, titanium nitride, molybdenum, tungsten A material with low reflectivity such as tantalum, tantalum nitride, etc. is suitable. The electrode 318 may be made of a transparent material, and the insulating film 315 may be made of a light-absorbing material. It is Noh.

[0126] In the case of a structure in which display is made on the pixel electrode side, the electrodes 316 to 318 are made of titanium, molybdenum, Tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niobium , silicon, zinc, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO) It is preferable to form a single layer or multiple layers using tin oxide (SnO).

[0127] Here, the conductive layer 310, which can also function as an auxiliary electrode, is located on the top or bottom surface of the display device. When viewed from the bottom, it overlaps with the gap between the electrode 316 and the electrode 317. By doing so, it is possible to obtain an electric field driving display device in which display defects are unlikely to occur.

[0128] A layer 319 is formed on the electrodes 316 to 318. The layer 319 is a layer including a display medium. The layer 319 may be, for example, a dispersion 32 in which microcapsules 320 are dispersed and fixed. 1 is provided on the electrodes 316 to 318. Note that the layer 319 is provided with an electrode 322 and a substrate 323. The electrode 322 can function as a counter electrode. An adhesive layer can be provided between the electrodes 316 to 318. An adhesive layer can be provided between the film 322 and the film 322.

[0129] In the case of a structure in which display is made on the opposing electrode side, the electrode 322 is made of a light-transmitting material such as ITO or IZO. Use.

[0130] In the case of a structure in which display is made on the pixel electrode side, it is preferable to use a metal material for the electrode 322. The use of metal materials can reduce wiring resistance. , titanium, molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper , silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium, etc. can be done.

[0131] A substrate 323 is disposed on the electrode 322. The substrate 323 functions to protect the layer 319. The substrate 323 may be a plastic substrate, a resin substrate, Film substrate, glass substrate, ceramic substrate, stainless steel substrate, stainless steel foil substrate, etc. can be used.

[0132] In FIG. 19, the conductive layer 313 includes the electrodes 316, 318, 338, and 339. 39. The electric field driven type display in one aspect of this embodiment is When the display device is viewed from the top or bottom, the conductive layer 313 is located between the electrode 318 and the electrode 316. The conductive layer 313 is disposed so as to fill the gap between the electrode 318 and the electrode 338. They are arranged so that they can be easily accessed.

[0133] In FIG. 19, the conductive layer 310 includes an electrode 316, an electrode 317, an electrode 339, and an electrode 338. 40. The electric field driven type display in one aspect of this embodiment is When the display device is viewed from the top or bottom, the conductive layer 310 is located between the electrode 316 and the electrode 317. The conductive layer 310 is disposed so as to fill the gap between the electrode 316 and the electrode 339. They are arranged so that they can be easily accessed.

[0134] In FIG. 19, the conductive layer 312 is disposed so as to partially overlap the electrode 317 and the electrode 340. The electric field driving display device according to one embodiment of the present invention is arranged from the top or bottom. As can be seen, the conductive layer 312 is disposed so as to fill the gap between the electrode 317 and the electrode 340. do.

[0135] In FIG. 19, the conductive layer 342 includes the electrodes 316, 318, 345, and 346. 46. ​​The electric field driven type display in one aspect of this embodiment is When the display device is viewed from the top or bottom, the conductive layer 342 is located between the electrode 345 and the electrode 346. The conductive layer 342 is disposed so as to fill the gap between the electrode 345 and the electrode 318. They are arranged so that they can be easily accessed.

[0136] In FIG. 19, the conductive layer 343 includes the electrodes 316, 317, 346, and 347. 47. The electric field driven type display panel according to one aspect of the present embodiment is When the display device is viewed from the top or bottom, the conductive layer 343 is formed in the gap between the electrode 346 and the electrode 347. The conductive layer 343 is disposed so as to fill the gap between the electrode 346 and the electrode 316. They are arranged so that they can be easily accessed.

[0137] In FIG. 19, the conductive layer 344 is disposed so as to partially overlap the electrode 317 and the electrode 347. The electric field driving display device according to one embodiment of the present invention is arranged from the top or bottom. As can be seen, the conductive layer 344 is disposed so as to fill the gap between the electrode 317 and the electrode 347. do.

[0138] Alternatively, in order to prevent short-circuiting with the pixel electrode or auxiliary electrode of an adjacent pixel, It is possible that there are small areas where no electrode or auxiliary electrode is located.

[0139] FIG. 21 is an enlarged view of one pixel and its surroundings in FIG. 19. For simplicity of the drawing, The line 304 and the wiring 341 are omitted. The area of ​​the conductive layer 310, the conductive layer 312, and the conductive layer 313 can function as auxiliary electrodes. The pitch (adjacent layers) of the layer 313, the conductive layers 335 to 337, and the conductive layers 342 to 344 The distance is defined based on the distance to the conductive layer that can function as an auxiliary electrode. An area having an area of ​​one pixel is defined as area 350 in FIG.

[0140] In FIG. 21A, the region 351 includes the electrode 339, the conductive layer 310, the electrode 316, and the conductive layer 310. The area surrounded by the layer 313 is an area including an electrode and an auxiliary electrode that can function as a pixel electrode. The region 352 is a region where no conductive layer capable of functioning as an electrode is disposed. 310, the electrode 317, the conductive layer 343, and the electrode 316, which serves as a pixel electrode. and a conductive layer capable of functioning as an auxiliary electrode. It is an area that does not exist.

[0141] In FIG. 21(B), the region 353 is formed by the electrodes 339, 340, 316, and This is an area where the pole 317 is not disposed, but where the conductive layer 310 is disposed.

[0142] Electrode 339, electrode 340, electrode 316, electrode 317, and conductive layer 310 are not disposed. The areas (area 351 and area 352) are present to prevent short circuits with adjacent pixels. However, in order to obtain a display device with reduced display defects, it is necessary to expand the range. It is necessary to dispose a conductive layer that can function as a pixel electrode or an auxiliary electrode. Thus, the electrodes 339, 340, 316, 317, and the conductive layer 310 are arranged. The area of ​​the region where the electrodes 339, 340, 316, and 317 are not arranged is It is desirable that the area be smaller than the area of ​​the region where the conductive layer 310 is disposed. That is, it is desirable that the total area of ​​the region 351 and the region 352 is smaller than the area of ​​the region 353. In addition, a conductive layer 310 capable of functioning as an auxiliary electrode is formed in the region 353. In the example described above, a conductive layer capable of functioning as a pixel electrode is provided in the region 353. A conductive layer that can function as an auxiliary electrode and a conductive layer other than the wiring that becomes the source line are formed. It may be provided.

[0143] The conductive layers 310, 312, 313, 335 to 337, The conductive layer 342 to the conductive layer 344 are layers of the gate line 330 and the gate line 331 and the pixel electrode. Electrodes 316 to 318, electrodes 338 to 340, which can function as electrodes; The gate line and the conductive layer are located between the layers of the electrodes 345 to 347. Layer 310, conductive layer 312, conductive layer 313, conductive layers 335 to 337, conductive layers 342 to The area overlapping the conductive layer 344 is larger than the area overlapping the gate line and the conductive layer 344 which can function as a pixel electrode. Overlaps electrodes 316 to 318, electrodes 338 to 340, and electrodes 345 to 347 It is desirable to arrange the gate lines so that the area is larger than the pixel electrode. Since it is formed on an insulating film provided on the auxiliary electrode, the gate line is located at a position overlapping with the pixel electrode. By placing the above, the parasitic capacitance can be reduced.

[0144] The configurations of Figures 19, 20(A), and 20(B) reduce particle aggregation. This allows the display to reflect the rewriting operation, and prevents afterimages. Therefore, an electric field driving type display device can be fabricated.

[0145] In this embodiment, the channel-etched TFT is used as an example. It is also possible to use FT, top gate TFT, etc.

[0146] FIG. 22 is a top view of an electric field driving display device using a top gate type TFT. FIG. 23 shows a cross section taken along the line G-H in FIG.

[0147] A semiconductor layer 801 and a semiconductor layer 802 are formed on a substrate 800. The semiconductor layer 801 and the semiconductor layer 802 are made of polycrystalline silicon. The film can be formed by a photolithography method, an ink-jet method, a printing method, or the like.

[0148] An insulating film 803 is formed on the semiconductor layer 801 and the semiconductor layer 802. The insulating film 803 is The insulating film 803 can function as a silicon oxide-based material or a nitride-based material. It is formed by using a silicon-based material or the like by a plasma CVD method or a sputtering method or the like. This can be done.

[0149] A gate electrode 804 and a gate electrode 805 are formed on the insulating film 803. 4 and the gate electrode 805 are made of titanium, molybdenum, tantalum, chromium, tungsten, or aluminum. Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, Ru, indium tin oxide (hereinafter referred to as ITO), indium zinc oxide (hereinafter referred to as I Zinc oxide (ZnO), zinc oxide (ZnO), or tin oxide (SnO) are used for sputtering or It can be formed as a single layer or multiple layers by a CVD method or the like.

[0150] An insulating film 806 is formed on the gate electrode 804, the gate electrode 805, and the insulating film 803. The insulating film 806 is made of a silicon oxide material or a silicon nitride material, and is formed by plasma CV. The insulating film 806 can be formed by a method such as a deposition method or a sputtering method. The organic material may be formed as a single layer or multiple layers. For example, acrylic, polyimide, polyamide, Polyimide amide, benzocyclobutene, epoxy, etc. can also be used. The insulating film 806 may have a stacked structure of an organic material and an inorganic material. For this purpose, a material having a light-shielding property or a color filter may be used. Examples of the black pigment include carbon black and organic resins containing black pigments.

[0151] Contact holes are formed in the insulating film 803 and the insulating film 806 to electrically connect the semiconductor layer 801 Electrodes 807 and 808 electrically connected to the semiconductor layer 802 The electrodes 807 to 810 are made of titanium, molybdenum, titanium tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niobium, Silicon, zinc, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO), Alternatively, the electrode 807 can be formed as a single layer or multiple layers using tin oxide (SnO). and electrode 809 function as source lines, and electrodes 808 and 810 function as auxiliary electrodes. It should be noted that the electrodes 851 to 854 shown in FIG. - Formed in the same process as electrode 810.

[0152] An insulating film 811 is formed on the electrodes 807 to 810. The insulating film 811 is a silicon oxide-based Using silicon nitride materials or silicon nitride materials, etc., by plasma CVD method or sputtering method, etc. The insulating film 811 can be formed by forming a single layer or multiple layers of an organic material. For example, acrylic, polyimide, polyamide, polyimide amide, benzosilane The insulating film 811 can be made of an organic material or an inorganic material. Alternatively, a material having a light-shielding property may be used as the insulating film 811. Examples of materials with light-shielding properties include carbon black and organic resins containing black pigments. It can be obtained.

[0153] A contact hole is formed in the insulating film 811, and an electrode 81 electrically connected to the electrode 808 is formed. Electrode 812 and electrode 813 electrically connected to electrode 810. 13 is titanium, molybdenum, tantalum, chromium, tungsten, aluminum, neodymium Aluminum, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium, ITO , IZO, zinc oxide (ZnO), or tin oxide (SnO) in single or multilayer configurations. The electrode 812 and the electrode 813 can function as pixel electrodes. 22 are the same as the electrodes 812 and 813. The electrode 855 is electrically connected to the electrode 851. The electrode 859 is electrically connected to the electrode 851. Electrode 852 is electrically connected to electrode 853. Electrode 860 is electrically connected to electrode 853. Electrode 861 is electrically connected to electrode 854.

[0154] A layer 814, an electrode 815, and a substrate 816 are formed on the electrode 812 and the electrode 813, Layer 814 is a layer containing a display medium. , layer 814 is an example of a layer having microcapsules.

[0155] The electrode 815 is made of titanium, molybdenum, tantalum, chromium, tungsten, aluminum, Neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium, etc. The electrode 815 can function as a counter electrode. be.

[0156] The substrate 816 may be a plastic substrate, a resin substrate, a film substrate, a glass substrate, a ceramic substrate, or the like. A composite substrate, a stainless steel substrate, a stainless steel foil substrate, etc. can be used.

[0157] FIG. 24 shows a conductive layer 817 formed from the same material and in the same process as the gate electrode 804 in FIG. This is an example of a cross-sectional view of an electric field driving display device having a structure in which a conductive layer 818 is added. At least a part of the electrode 808 overlaps with the insulating film 806 interposed therebetween, and the electrode 808 serves as one electrode of the storage capacitor. The conductive layer 818 can function as a gate electrode. The electrode also partially overlaps with the electrode of the storage capacitor, and can function as one electrode of the storage capacitor.

[0158] FIG. 25 shows a conductive layer 819 formed from the same material and in the same process as the gate electrode 804 in FIG. This is an example of a cross-sectional view of an electric field driving display device having a structure in which a conductive layer 820 is added. At least a part of the semiconductor layer 801 overlaps with the insulating film 803, and the insulating film 803 is one of the electrodes of the storage capacitor. The conductive layer 820 can function as a semiconductor layer 802 with the insulating film 803 interposed therebetween. and at least a part of the electrode overlaps with the electrode, and can function as one electrode of the storage capacitor.

[0159] In FIG. 22, electrode 808 is connected to electrodes 812, 813, 857, and 858. The electric field driving display device according to one embodiment of the present invention is arranged so as to partially overlap with the When the device is viewed from above or below, the electrode 808 fills the gap between the electrodes 812 and 813. The electrode 808 is arranged so as to fill the gap between the electrode 857 and the electrode 812. are located at.

[0160] In FIG. 22, the electrode 810 is arranged so as to partially overlap the electrodes 858 and 813. When the electric field driving display device according to one embodiment of the present invention is viewed from above or below, When this is done, electrode 810 is disposed so as to fill the gap between electrode 858 and electrode 813.

[0161] In FIG. 22, the electrode 851 is connected to the electrodes 856, 855, 857, and 812. The electric field driving display device according to one embodiment of the present invention is arranged so as to partially overlap with the When the device is viewed from above or below, the electrode 851 fills the gap between the electrode 855 and the electrode 812. The electrode 851 is arranged so as to fill the gap between the electrode 855 and the electrode 856. are located at.

[0162] In FIG. 22, electrode 852 is connected to electrodes 855, 859, 812, and 860. The electric field driving display device according to one embodiment of the present invention is arranged so as to partially overlap with the When the device is viewed from above or below, electrode 852 fills the gap between electrode 859 and electrode 860. The electrode 852 is arranged so as to fill the gap between the electrode 859 and the electrode 860. are located at.

[0163] In FIG. 22, electrode 853 is connected to electrodes 812, 860, 813, and 861. The electric field driving display device according to one embodiment of the present invention is arranged so as to partially overlap with the When the device is viewed from above or below, the electrode 853 fills the gap between the electrodes 860 and 861. The electrode 853 is arranged so as to fill the gap between the electrode 812 and the electrode 860. are located at.

[0164] In FIG. 22, the electrode 854 is arranged so as to partially overlap the electrodes 813 and 861. When the electric field driving display device according to one embodiment of the present invention is viewed from above or below, When this is done, electrode 854 is disposed so as to fill the gap between electrode 813 and electrode 861 .

[0165] By using such a structure, an electric field driving display device that is less likely to cause display defects can be obtained. can be done.

[0166] 22 to 25, the electric field driving type display device includes a semiconductor layer 801 and a semiconductor layer 80 Since polycrystalline silicon is used as the gate electrode, the transistor mobility is high and the manufacturing cost is low. Furthermore, the deterioration of characteristics over time is small, so it is possible to install highly reliable devices. You can get a position.

[0167] The electrodes 807 to 810 and the electrodes 851 to 854 are gate lines (gate electrodes 804 and gate electrode 805) and a layer that can function as a pixel electrode. The layers are located between the electrode 812, the electrode 813, and the electrode 855 to the electrode 861. At this time, the gate lines and the electrodes 807 to 810 and the electrodes 851 to 854 overlap each other. The area of ​​the gate electrode 812 and the electrode 813 that can function as a pixel electrode is larger than the area of ​​the gate electrode 812. 13 and the area overlapping with the electrodes 855 to 861 is larger. The pixel electrode is preferably formed on an insulating film provided on the auxiliary electrode. Therefore, by arranging the gate line so that it overlaps with the pixel electrode, it is possible to reduce the parasitic capacitance. can.

[0168] Furthermore, an electric field driving type display device may be constructed using TFTs that use oxide semiconductors. 26(A) to 26(C) are embodiments of bottom gate type TFTs using oxide semiconductors.

[0169] In FIG. 26A, a gate electrode 901 and a conductive layer 912 are formed on a substrate 900. A base insulating film may be formed on the substrate 900. The gate electrode 901 and the conductive layer 91 A gate insulating film 902 is formed on the gate insulating film 902. An electrode 903 and an electrode The electrode 904 is formed on the semiconductor substrate 901. The electrode 903 functions as a source electrode or a drain electrode. Electrode 904 can function as an auxiliary electrode. Electrode 903 A semiconductor layer 905 made of an oxide semiconductor is formed on the electrode 904 and the gate insulating film 902. An insulating film 906 is formed on the semiconductor layer 905. A hole is formed in the electrode 907, which is electrically connected to the electrode 904. The electrode 907 can function as a pixel electrode. A layer 908 is formed on the electrode 907. The layer 908 is a layer including a display medium. An electrode 909 is formed on the layer 908. The electrode 909 can function as a counter electrode. The electrode 904 is formed by the same process as the electrode 907. The conductive layer 912 is formed so as to overlap at least a part of the region between the gate electrode 911 and the conductive layer 912. It overlaps with the electrode 904 via the gate insulating film 902 and functions as one electrode of the storage capacitor. It is possible to do this.

[0170] The TFT structure shown in FIG. 26(A) is a structure in which a semiconductor layer using an oxide semiconductor is provided under the semiconductor layer. This paper describes a TFT with a structure called a bottom contact type, in which a source electrode or a drain electrode is formed. This can be applied to the embodiment.

[0171] In FIG. 26B, a gate electrode 921 and a conductive layer 932 are formed on a substrate 920. A base insulating film may be formed over the substrate 920. The gate electrode 921 and the conductive layer 93 A gate insulating film 922 is formed on the gate insulating film 922. A semiconductor layer 923 is formed on the semiconductor layer 923. An electrode 924 and an electrode 925 are formed on the semiconductor layer 923. The electrode 924 can function as a source electrode or a drain electrode. Electrode 925 can function as an auxiliary electrode. An insulating film 926 is formed on the insulating film 926. A contact hole is formed in the insulating film 926. An electrode 927 is formed, which is electrically connected to the electrode 925. The electrode 927 is used as a pixel electrode. The layer 928 is formed on the electrode 927. The layer 928 is a layer containing a display medium. An electrode 929 is formed on the layer 928. The electrode 929 is a counter electrode. The electrode 929 can function as a protective layer. A protective layer 930 is formed on the electrode 929. The electrode 925 is formed in the region between the electrode 927 and the electrode 931 formed in the same process as the electrode 927. The conductive layer 932 is formed so as to overlap at least a part of the gate insulating film 922. The electrode 925 overlaps the electrode 926 and can function as one electrode of a storage capacitor.

[0172] The TFT structure shown in FIG. 26(B) is a structure in which a semiconductor layer using an oxide semiconductor is provided on the substrate. This paper describes a TFT with a structure called a top contact type, in which a source electrode or a drain electrode is formed. This can be applied to the embodiment.

[0173] In FIG. 26(C), a gate electrode 941 and a conductive layer 953 are formed on a substrate 940. A base insulating film may be formed over the substrate 940. The gate electrode 941 and the conductive layer 95 A gate insulating film 942 is formed on the gate insulating film 942. A semiconductor layer 943 is formed on the semiconductor layer 943. The semiconductor layer 943 overlaps the gate electrode 941. The channel protective film 944 and the semiconductor layer An electrode 945 and an electrode 946 are formed on the gate electrode 943. The electrode 945 is a source electrode or The electrode 946 can function as an auxiliary electrode. An insulating film 947 is formed on the electrode 945 and the electrode 946. A contact hole is formed in 947, and an electrode 948 electrically connected to the electrode 946 is formed. The electrode 948 can function as a pixel electrode. A layer 949 is formed. The layer 949 is a layer including a display medium. An electrode 95 is formed on the layer 949. Electrode 950 can function as a counter electrode. A protector 951 is formed on the electrode 946. The electrode 946 is connected to the electrode 948 by the same process as the electrode 948. The conductive layer 952 is formed so as to overlap at least a part of the region between the conductive layer 952 and the conductive layer 952 formed in the conductive layer 952. The electrode layer 953 overlaps with the electrode 946 via the gate insulating film 942, and is one side of the storage capacitor. It is possible for the electrode to function as an electrode.

[0174] The TFT structure shown in FIG. 26(C) is a structure in which a transistor is formed on a semiconductor layer using an oxide semiconductor. A TFT having a structure called a channel protection type in which a channel protection film is formed is applied to this embodiment. It is possible.

[0175] As shown in FIGS. 26(A) to 26(C), when an oxide semiconductor is used as the semiconductor layer, It is possible to obtain higher mobility than thin film transistors using amorphous silicon. The compound semiconductor film can be formed at temperatures below 300°C by sputtering or other methods. The manufacturing process is simpler than that of thin film transistors using polycrystalline silicon.

[0176] Note that an example of an oxide semiconductor that can be used in this specification is InMO3(Z nO) m (m>0), where M is gallium (Ga), iron (F e), a metal selected from nickel (Ni), manganese (Mn) and cobalt (Co) It indicates an element or a plurality of metal elements. For example, when Ga is selected as M, only Ga is included. In addition to this case, there are cases where the above metal elements other than Ga are selected, such as Ga and Ni, Ga and Fe, etc. In addition to the metal element contained as M in the oxide semiconductor, impurities Contains Fe, Ni or other transition metal elements, or oxides of said transition metals. In this specification, among the above oxide semiconductors, M is at least gallium. Those containing In-Ga-Zn-O are called In-Ga-Zn-O oxide semiconductors, and thin films using these materials are called In-Ga-Zn-O oxide semiconductors. It is sometimes called a -Ga-Zn-O based non-single crystal film.

[0177] In this embodiment, an active matrix electric field driving display device will be described. However, the display device of this embodiment may be a passive matrix electric field driving display device. .

[0178] The cross-sectional views of the passive matrix electric field driving display device are shown in FIGS. 4 and 5, and the top view is shown in FIG. 6. The electrodes 109 and 100 are formed in a stripe pattern, and the electrodes 101 are formed in a stripe pattern. The electrodes 109 and 100 are formed in stripes extending in a direction perpendicular to the electrodes 109 and 100. The electrode 9 can function as an auxiliary electrode, and the electrode 100 can function as a pixel electrode. In this case, the electrode 101 can function as a counter electrode.

[0179] When a passive matrix electric field driving display device is viewed from above or below, the entire pixel area In other words, the electrode 109 or the electrode 100 is formed on the The electrode 109 or the electrode 100 is formed in the entire area opposite to the area where the electrode is formed. That is, by having such a configuration, an electric field driving type display device with reduced display defects can be provided. can be obtained.

[0180] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. This can be done.

[0181] (Fourth embodiment) In this embodiment, one embodiment of an electric field driving display device of the present invention will be described with reference to the drawings. do.

[0182] 27 is a schematic cross-sectional view of one aspect of this embodiment. The conductive layer 400 is formed using the same material as the source and drain in the same process. The conductive layer 400 may be made of titanium, molybdenum, tantalum, chromium, or the like. Aluminum, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc Lead, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO) is used to form a single layer or multiple layers using a sputtering method or CVD method. It is possible.

[0183] An insulating film 401 is formed over the conductive layer 400. The insulating film 401 functions as a planarization film. The insulating film 401 can be made of a light-shielding material such as black resin or carbon black, or an acrylic resin. It is preferable to use a resin material such as polyimide or polyamide. It is also possible to use a photosensitive acrylic or the like as the insulating film 401. Alternatively, the insulating layer 11 may have a laminated structure of a material or resin material and an inorganic material such as silicon nitride.

[0184] A conductive layer 402 is formed over the insulating film 401. The conductive layer 402 functions as an auxiliary electrode. The conductive layer 402 can be made of titanium, molybdenum, tantalum, chromium, tungsten, or the like. Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium Aluminum, germanium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), etc. A conductive material can be used.

[0185] The conductive layer 400 or the conductive layer 402 is formed so as to fill the region 351 or the region 352 in FIG. As a result, the entire pixel area can be covered with a thin film in a plane parallel to the substrate. This makes it possible to provide electrodes such as pixel electrodes and auxiliary electrodes without any gaps.

[0186] An insulating film 403 is formed over the conductive layer 402. The insulating film 403 is made of a silicon oxide-based material or Using silicon nitride materials, etc., single layer or It can be formed in multiple layers.

[0187] Contact holes are formed in the insulating film 401 and the insulating film 403 at the same time.

[0188] An electrode 404 is formed to electrically connect to the conductive layer 400 and the conductive layer 402. The electrode 404 can function as a pixel electrode. The electrode 404 is made of a material that absorbs light. For example, chromium, titanium, titanium nitride, molybdenum, tungsten A material with low reflectivity such as tantalum, tantalum nitride, etc. is suitable. The electrode 404 can be formed of the same material. This simplifies the manufacturing process. do.

[0189] The thickness of the insulating film 401 that can function as a planarizing film is about 1 μm to 2 μm. The insulating film 403 has a thickness of about several nm to 2 μm. 1, a conductive layer 402 and an electrode 404 are formed, which function as an auxiliary electrode. By forming the insulating film 401, the unevenness of the surface on which the conductive layer 4 is formed can be reduced. The capacitance between the electrode 400 and the conductive layer 402 or the capacitance between the electrode 404 and the conductive layer 400 can be reduced. This makes it possible to prevent noise contamination and crosstalk.

[0190] A layer 405 and an electrode 406 are formed over the electrode 404. The layer 405 is a layer including a display medium. Here, an example is shown in which microcapsules are used as the layer 405. It is also possible to use a cap or electronic liquid powder (registered trademark). A translucent material such as O is used.

[0191] In this embodiment mode, a step of forming the conductive layer 402 which functions as an auxiliary electrode is added. Although the number of masks required increases, the insulating film 401 and the insulating film 403 are simultaneously etched to form a contact. Therefore, the number of masks required for the contact hole formation process does not increase.

[0192] Another aspect of this embodiment will be described with reference to FIG.

[0193] 28, the conductive layer 400, the conductive layer 402, and the electrode 404 shown in FIG. 27 are electrically connected. The other parts are the same as in Figure 27, so the explanation will be omitted here. .

[0194] In FIG. 27, after the conductive layer 400 and the conductive layer 402 are formed, a part of each is exposed. 28, the contact holes are formed on the insulating layer 400. A contact hole is formed in the film 401, and a conductive layer 402 is formed therein. The insulating film 403 is then formed on the conductive layer 402. The contact hole is electrically connected to the conductive layer 402. The electrode 404 is formed so as to be connected.

[0195] The conductive layer 400 or the conductive layer 402 is formed so as to fill the region 351 or the region 352 in FIG. As a result, the entire pixel area can be covered with a thin film in a plane parallel to the substrate. This makes it possible to provide electrodes such as pixel electrodes and auxiliary electrodes without any gaps.

[0196] Another aspect of this embodiment will be described with reference to FIG.

[0197] 29, the conductive layer 400, the conductive layer 402, and the electrode 404 shown in FIGS. 27 and 28 are The electrical connection method is different. Other than that, it is the same as Figures 27 and 28. The explanation will be omitted here.

[0198] In FIG. 29, a contact hole is formed in an insulating film 401 formed on a conductive layer 400. The conductive layer 402 is formed. Here, the conductive layer 402 and the conductive layer 400 are electrically connected. Subsequently, an insulating film 403 is formed over the conductive layer 402, and the insulating film 401 and the insulating film 403 are A contact hole is formed that reaches the conductive layer 400. Electrode 404 is formed so as to be electrically connected to 00.

[0199] The conductive layer 400 or the conductive layer 402 is formed so as to fill the region 351 or the region 352 in FIG. As a result, the entire pixel area can be covered with a thin film in a plane parallel to the substrate. This makes it possible to provide electrodes such as pixel electrodes and auxiliary electrodes without any gaps.

[0200] One aspect of this embodiment will be described with reference to FIGS. 30 and 31. FIG.

[0201] Fig. 30 is a top view of one aspect of this embodiment. Fig. 31 shows a cross section taken along line IJ in Fig. 30. 30 shows the gate line 1215, the gate line 1216, the electrode 120, and the 1, electrodes 1217 and 1218, wiring 1202 and wiring 1219, semiconductor layer 120 4, semiconductor layer 1220 to semiconductor layer 1224, conductive layer 1205, conductive layer 1206, conductive layer 1 208, conductive layer 1210, conductive layer 1211, conductive layers 1225 to 1243 are shown. The other configurations are omitted.

[0202] The electrodes 1201, 1217, and 1218 function as gate electrodes. The wiring 1202 and the wiring 1219 can function as capacitance wiring. The conductive layer 1205, the conductive layer 1225, and the conductive layer 1226 function as source lines. The conductive layer 1206, the conductive layer 1227, and the conductive layer 1228 are connected to the drain The conductive layer 1208 and the conductive layer 1229 can function as an electrode or a capacitor wiring. The conductive layer 1236 can function as an auxiliary electrode. The conductive layers 1211 and the conductive layers 1237 to 1243 can function as pixel electrodes. be.

[0203] A conductive film is formed on a substrate 1200. The conductive film is processed into a desired shape, and an electrode 1201 and This becomes the wiring 1202. The substrate 1200 is a glass substrate, a plastic substrate, or the like. The conductive film to be the electrode 1201 and the wiring 1202 can be made of titanium, molybdenum, or titanium. tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold, platinum, niobium, Silicon, zinc, iron, barium, germanium, indium tin oxide (ITO), Indium zinc oxide (IZO), zinc oxide (ZnO), or tin oxide (SnO ) can be formed in a single layer or multiple layers by sputtering or CVD. In addition, a base film may be formed on the substrate 1200 before forming the conductive film. For example, a single layer of insulating film is formed using a silicon oxide material film or a silicon nitride material film, or The silicon oxide material is a material that is mainly composed of oxygen and silicon. Silicon oxide containing nitrogen or silicon oxide containing nitrogen and the oxygen content is Silicon nitride materials are silicon oxynitrides containing more than 100% of nitrogen and silicon. Silicon nitride mainly composed of silicon dioxide and silicon dioxide, or silicon nitride containing oxygen and the nitrogen content is The electrode 1217 and the electrode 1218, gate line 1215, gate line 1216, and wiring 1219 are connected to the electrode 1201. The wiring 1202 is formed in the same process.

[0204] An insulating film 1203 is formed on the electrode 1201 and the wiring 1202. The insulating film 1203 is oxidized. Using silicon-based materials or silicon nitride-based materials, etc., plasma CVD or sputtering The insulating film 1203 functions as a gate insulating film. In addition, the insulating film 1203 functions as an insulating film for a storage capacitor. It is possible to do this.

[0205] On the insulating film 1203, a semiconductor layer 1204 (a semiconductor layer 1204a and a semiconductor layer 1204b) is formed. The semiconductor layer 1204a and the semiconductor layer 1204b are formed with an insulating film 1203 interposed therebetween. 30. The semiconductor layer 1220 is formed at a position overlapping with the semiconductor layer 1201. The layer 24 is formed in the same process as the semiconductor layer 1204a and the semiconductor layer 1204b.

[0206] The semiconductor layer 1204 may be made of a non-crystalline semiconductor such as amorphous silicon, or a finely crystalline semiconductor such as amorphous silicon. crystalline silicon, polycrystalline silicon, single crystal silicon, and compound semiconductors such as gallium arsenide (GaAs) Conductors, zinc oxide (ZnO), oxide semiconductors such as In-Ga-Zn-O, or organic semiconductors It is possible to use materials such as amorphous silicon. I will explain.

[0207] The semiconductor layer 1204a is formed by depositing amorphous silicon using photolithography and inkjet printing. The semiconductor layer 1204a can be formed by a deposition method, a printing method, or the like. It is possible for the semiconductor layer to include a portion that functions as a channel region of the semiconductor layer.

[0208] When amorphous silicon is used as the semiconductor layer 1204a, the transistor characteristics The advantages are high uniformity and low manufacturing costs. This is effective when fabricating transistors on large substrates exceeding 100 mm.

[0209] The semiconductor layer 1204b is made of silicon containing phosphorus or the like, and has a higher conductivity than the semiconductor layer 1204a. The semiconductor layer 1204b can be made of a highly insulating material. Fa layer or n + The semiconductor layer 1204b can also be expressed as a source and drain layer. It is possible for the compound to contain a moiety that functions as a promoter.

[0210] Next, a conductive layer 1205 and a conductive layer 1206 are formed. The conductive layer 1205 is a source and drain The conductive layer 1206 may include a portion that functions as one of the source and drain. The conductive layer 1206 may include a portion that functions as the other of the drains. The conductive layer 1205 and the conductive layer 1206 are formed so as to partially overlap with the wiring 1202. Tantalum, molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper, silver , gold, platinum, niobium, silicon, zinc, iron, barium, germanium, ITO, IZO, Using zinc oxide (ZnO) or tin oxide (SnO), sputtering or CVD method The conductive layers 1225 to 1226 shown in FIG. The conductive layer 1228 is formed in the same step as the conductive layers 1205 and 1206 .

[0211] An insulating film 1207 is formed as a single layer or multiple layers over the conductive layer 1205 and the conductive layer 1206 . The insulating film 1207 is made of a silicon oxide material or a silicon nitride material, and is formed by plasma CV The insulating film 1207 can be formed by a method such as a sputtering method or a method using a silicon dioxide film. The organic material may be formed as a single layer or multiple layers. For example, acrylic, polyimide, polyamide, amide, polyimide amide, benzocyclobutene, epoxy, etc. can also be used. The insulating film 1207 may have a stacked structure of an organic material and an inorganic material. A light-shielding material or a color filter may be used as the light-shielding material. Examples of the black pigment include carbon black and organic resins containing black pigments.

[0212] A conductive layer 1208 is formed over the insulating film 1207. The conductive layer 1208 is made of titanium, molybdenum, or the like. , Tantalum, Chromium, Tungsten, Aluminum, Neodymium, Copper, Silver, Gold, Platinum, Niobium Silicon, zinc, iron, barium, germanium, ITO, IZO, zinc oxide (ZnO ), or tin oxide (SnO), is used to form a single layer or The conductive layers 1229 to 1236 shown in FIG. It is formed in the same process as the layer 1208 .

[0213] An insulating film 1209 is formed on the conductive layer 1208. The insulating film 1209 is made of silicon oxide. Silicon nitride or silicon nitride materials are used, and plasma CVD or sputtering methods are used. The insulating film 1209 can be formed by a single layer or a multilayer of an organic material. For example, acrylic, polyimide, polyamide, polyimide amide, The insulating film 1209 can be made of an organic material such as benzocyclobutene or epoxy. The insulating film 1209 may have a laminated structure of a light-shielding material and an inorganic material. As a material having a light-shielding property, carbon black, an organic material containing a black pigment, Resins and the like can be cited.

[0214] Next, the insulating film 1207 and the insulating film 1209 are etched to form a conductive layer 1206. A contact hole and a contact hole reaching the conductive layer 1208 are simultaneously formed. 1206 and 1208 are electrically connected to form a conductive layer 1210. In the same process as the conductive layer 1210, the conductive layer 1211, the conductive layers 1237 to 1238 shown in FIG. 243 is formed.

[0215] Here, the conductive layer 1208 that can function as an auxiliary electrode is Therefore, it is also formed in the gap region between the conductive layer 1210 and the conductive layer 1211. By adopting this structure, an electric field driving display device that is less likely to cause display defects can be obtained.

[0216] A layer 1212 is formed over the conductive layer 1210 and the conductive layer 1211. The layer 1212 is a display medium. The layer 1212 is a layer containing, for example, a microcapsule-dispersed and fixed layer. Examples include configuration.

[0217] Subsequently, a conductive layer 1213 is formed on the layer 1212. The conductive layer 1213 is made of titanium. , molybdenum, tantalum, chromium, tungsten, aluminum, neodymium, copper, silver, gold , platinum, niobium, silicon, zinc, iron, barium, germanium and other metal materials, ITO, A light-transmitting material such as IZO can be used.

[0218] A protective body 1214 is formed on the conductive layer 1213. The protective body 1214 is made of a plastic substrate. A plate, a resin substrate, a film substrate, a glass substrate, or the like can be used.

[0219] The thickness of the insulating film 1207 that can function as a planarizing film is about 1 μm to 2 μm. The insulating film 1209 has a thickness of about several nm to 2 μm. By forming an insulating film 1207 on the layer 1206, a conductive layer that functions as an auxiliary electrode is formed. The unevenness of the surface on which the insulating film 1208 is formed can be reduced. Therefore, the capacitance between the conductive layer 1206 and the conductive layer 1208 or the capacitance between the conductive layer 1206 and the conductive layer 121 It is possible to reduce the capacitance between the 0 and the .

[0220] In FIG. 30, the conductive layer 1231 is partially overlapped with the conductive layer 1238 and the conductive layer 1211. The conductive layer 1232 is arranged so as to be connected to the conductive layer 1238, the conductive layer 1239, The conductive layer 1211 and the conductive layer 1210 are arranged so as to partially overlap each other. Layer 1233 includes conductive layer 1239, conductive layer 1240, conductive layer 1210, and conductive layer 1237. The conductive layer 1229 is arranged so as to overlap the conductive layer 1211 and the conductive layer 1229. The conductive layer 1208 is disposed so as to partially overlap the conductive layer 1241. 211, the conductive layer 1210, the conductive layer 1241, and the conductive layer 1242 are arranged so as to overlap with each other. The conductive layer 1230 is formed by the conductive layer 1210, the conductive layer 1237, and the conductive layer 12 42 and the conductive layer 1243. The conductive layer 1235 is disposed so as to partially overlap the conductive layer 1241. The conductive layer 1241 and the conductive layer 1242 are arranged so as to overlap each other. The conductive layer 236 is disposed so as to partially overlap the conductive layer 1242 and the conductive layer 1243 .

[0221] By adopting such a configuration, a display device with reduced display defects can be obtained. .

[0222] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. This can be done.

[0223] (Embodiment 5) 40 is a top view of one embodiment of the electric field driving display device of the present invention. The arrangement of the electrodes that function as auxiliary electrodes will be described.

[0224] As shown in FIG. 40(A), a gate electrode 1401, a gate electrode 1402, a gate line 1 The semiconductor layer 140 is formed on the gate electrode 1401. 5 is formed, and a semiconductor layer 1406 is formed on the gate electrode 1402. A source electrode 1407 and a drain electrode 1408 are formed on the semiconductor layer 1405. A source electrode 1409 and a drain electrode (not shown) are formed on the source 406. The electrode 1407 and the source electrode 1409 are also called source lines. An electrode 1410 electrically connected to the drain electrode 1408 is formed through an insulating film. Electrodes 1411 to 1413 are formed in the same process as the electrode 1410. An electrode 1414 is formed on the substrate 1410 via an insulating film. Electrodes 1415 to 1417 are formed in the same process as the electrode 1414. The electrode 1413 can function as a pixel electrode. The electrodes 1414 to 1417 are complementary electrodes. It can function as an auxiliary electrode.

[0225] The gap between the pixel electrode and the adjacent pixel electrode exists in the gate line direction and the source line direction. For example, when the electrode 1410 is viewed from the center, the gap between the electrode 1410 and the electrode 1412 is the gate line. The gap between the electrode 1410 and the electrode 1413 extends in the source line direction. As shown in FIG. 40(A), in the gap between the pixel electrode and the adjacent pixel electrode, In FIG. 40(A), an auxiliary electrode may be disposed in the gap extending to the electrode 1410. Electrode 1414 is disposed in the gap between electrode 1411 and electrode 1412. The electrode 1416 is connected to the electrode 1412 and the electrode ( The electrode 1417 is disposed in the gap between the electrode 1410 and the electrode 1410. It is placed in the gap between itself and the adjacent electrode (not shown) on the right.

[0226] FIG. 40(B) shows an example in which an auxiliary electrode is disposed in a gap extending in the gate line direction.

[0227] In FIG. 40B, a gate electrode 1451, a gate electrode 1452, a gate line 145 3 and a gate line 1454 are formed on the gate electrode 1451. A semiconductor layer 1455 is formed on the gate electrode 1451. A semiconductor layer 1456 is formed on the gate electrode 1452. A source electrode 1457 and a drain electrode 1458 are formed on the semiconductor layer 145. A source electrode 1459 and a drain electrode (not shown) are formed on the source electrode 1459. The drain electrode 1458 is covered with an insulating film. An electrode 1460 is formed which is electrically connected to the drain electrode 1458 via a gate electrode 1460a. Electrodes 1461 to 1463 are formed in the same process as the electrode 1460. An electrode 1464 is formed on the substrate 1460 via an insulating film. Electrodes 1465 to 1467 are formed in the same process as the electrode 1464. 1463 can function as a pixel electrode. Electrodes 1464 to 1467 are complementary electrodes. The electrode 1460 and the electrode 1462 are spaced apart from each other and function as an auxiliary electrode. 465 is deployed.

[0228] By adopting such a configuration, a display device with reduced display defects can be obtained. .

[0229] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. This can be done.

[0230] (Sixth embodiment) 32 to 34 are cross-sectional schematic diagrams of one embodiment of the electric field driving display device of the present invention.

[0231] 32(A) and (B) are shown on the side of the electrode 505 that can function as a counter electrode. This shows the structure that

[0232] 32(A) will be described. An electrode 501 is formed on an insulating film 500. An insulating film 502 is formed on the electrode 501. A contact hole is formed in the insulating film 502, and an electrode An electrode 503 is formed to be electrically connected to the electrode 501. A layer 504 is formed on the electrode 503. The layer 504 is a layer including a display medium. An electrode 505 is formed on the layer 504. Insulating films 506R, 506G, and 506B are formed on the electrode 5. The electrode 501 functions as an auxiliary electrode, the electrode 503 functions as a pixel electrode, and the electrode 505 functions as a counter electrode. It is possible for the ion beam to function as a pole.

[0233] In FIG. 32A, one or both of the insulating film 500 and the insulating film 502 are made of a light-shielding material. The light-shielding material may be carbon black, The insulating film 506R is a red color filter. The insulating film 506G can function as a green color filter. The insulating film 506B can function as a blue color filter. .

[0234] FIG. 32(B) shows the positions where the insulating films 506R, 506G, and 506B are to be formed. 32(B), an insulating film 506R is formed on the electrode 503. , an insulating film 506G, and an insulating film 506B are formed.

[0235] 33(A) and (B) show the display on the side of the electrode 513 that can function as a pixel electrode. This shows the structure that

[0236] 33A will be described. The insulating film 510R, the insulating film 510G, and the insulating film 510 An electrode 511 is formed on B. An insulating film 512 is formed on the electrode 511. A contact hole is formed, and an electrode 513 electrically connected to the electrode 511 is formed. A layer 514 is formed on the electrode 513. The layer 514 is a layer including a display medium. An electrode 515 is formed. An insulating film 516 is formed on the electrode 515. The electrode 511 is an auxiliary electrode. The electrode 513 functions as a pixel electrode, and the electrode 515 functions as a counter electrode. The insulating film 510R functions as a red color filter, and the insulating film 510G functions as a green color filter, and insulating film 510B functions as a blue color filter. The insulating film 516 can function as a light-shielding film. The light-shielding material may be an organic material containing carbon black or a black pigment. Resins and the like can be cited.

[0237] 33B. An electrode 511 is formed on the insulating film 510. The electrode 511 The insulating film 512R, the insulating film 512G, and the insulating film 512B are formed on the insulating film 512R. A contact hole is formed in the insulating film 512G and the insulating film 512B, and the electrode 511 is electrically connected to the insulating film 512G. An electrode 513 is formed, which is electrically connected to the substrate 510. A layer 514 is formed on the electrode 513. The layer 514 is The layer 514 is a layer including a display medium. An electrode 515 is formed on the layer 514. An insulating film 5 The electrode 511 functions as an auxiliary electrode, and the electrode 513 functions as a pixel electrode. The insulating film 512R can function as a red electrode, and the electrode 515 can function as a counter electrode. The insulating film 512G acts as a green color filter. The insulating film 512B can function as a blue color filter. The film 516 may be formed using a material having a light-blocking property. , carbon black, organic resins containing black pigments, etc.

[0238] 34(A) and (B) show the electrode 526 side and the pixel side which can function as a counter electrode. This shows a structure in which the display is made on the side of the electrode 524 that can function as an electrode. Polarizing plates are placed on both sides to prevent the background from showing through when viewed from either side. is possible.

[0239] Referring to Figure 34(A), a layer 521 is formed on a substrate 520. The layer 521 is made of TF The layer 521 is a layer containing T and the like. An electrode 522 is formed on the layer 521. 2 is formed, electrode 522 is the source electrode of the TFT included in layer 521. The electrode 522 may be a source electrode or a drain electrode of the TFT included in the layer 521. The insulating film 523 is formed on the electrode 522. A contact hole is formed in the insulating film 523, and an electrode 522 is electrically connected to the electrode 522. A layer 525 is formed on the electrode 524. The layer 525 is a layer including a display medium. An electrode 526 is formed on the layer 525. A substrate 527 is formed on the electrode 526. The electrode 520 and the substrate 527 can be made of a glass substrate, a plastic substrate, or the like. The electrode 22 functions as an auxiliary electrode, the electrode 524 functions as a pixel electrode, and the electrode 526 functions as a counter electrode. A polarizer 528 is provided in contact with the substrate 520, and the substrate A polarizing plate 529 is provided in contact with the polarizing plate 527. The polarizing plate 528 and the polarizing plate 529 are polarizing plates. The axes are crossed Nicols at right angles.

[0240] FIG. 34(B) shows the configuration of FIG. 34(A) with a color filter added. In B), a color filter 530R is placed between the substrate 520 and the layer 521. G, a color filter 530B is provided between the substrate 527 and the electrode 526. 31R, color filter 531G, and color filter 531B are provided. The color filter 530R and the color filter 531R are red color filters. The color filter 530G and the color filter 531G are green color filters. 30B and color filter 531B are blue color filters.

[0241] By placing polarizing plates on both substrates in this way, a display device that is less likely to show through the background can be created. can be obtained.

[0242] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. It should be noted that the contents described in this embodiment are merely examples and are not intended to limit the scope of the present invention. stomach.

[0243] (Embodiment 7) In this embodiment, the positional relationship between the pixel electrode and the auxiliary electrode of the electric field driving type display device of the present invention will be described with reference to the drawings. will be described with reference to the drawings.

[0244] In FIG. 35(A), an insulating film 1002 is formed on the electrode 1001. The insulating film 1002 is formed with a contact hole, and an electrode 1003 is formed so as to be electrically connected to the electrode 1001. A layer 1004 is formed on the electrode 1003. The layer 1004 is a layer containing a display medium. An electrode 1005 is formed on the layer 1004. The electrode 1006 is an electrode of an adjacent pixel formed in the same process as the electrode 1003. The electrode 1001 overlaps with the region between the electrode 1003 and the electrode 1006 and is formed so as to partially overlap with the electrode 1006. The electrode 1 001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. In this specification, the auxiliary electrode means an electrode having the same area as or smaller than the area of the pixel electrode. means an electrode having the same area as or smaller than the area of the pixel electrode.

[0245] Let the length of the overlap between the electrode 1001 and the electrode 1006 be Q1. Let the length between the electrode 1006 and the electrode 1003 be Q2. Let the film thickness of the insulating film 1002 be Q3. At this time, it is formed so as to have a region where the electrode 1001 and the electrode 1006 overlap (Q1>0). And it is possible to form it so as to have a region where Q1<Q2. Thus, manufacturing variations can be reduced. Further, since an electric field can be applied almost uniformly to the display medium contained in the layer 1004, an electric field driving type display device in which afterimages are unlikely to occur can be manufactured. However, one aspect of this embodiment is not limited to these. Note that the electrode However, one aspect of this embodiment is not limited to these. Note that the electrode Considering the influence of the parasitic capacitance caused by the overlap between 1001 and the electrode 1006, Q1 It is preferably formed to have a region such that <Q3.

[0246] Also, from the length from the portion (contact portion) where the wiring electrically connecting the electrode 1003 and the electrode 1001 is provided to the electrode 1006, subtract the length where the electrode 1001 does not overlap with the electrode 1003 (let the length between the electrode 1006 and the electrode 1003 be Q2). That is, let the length where the electrode 1003 and the electrode 1001 overlap be Q4. Let the distance from the contact portion of the electrode 1003 to the end of the electrode 1001 be Q5. Considering mask deviation, etc., it is preferable that Q4>0 and Q5>0. At this time, it is preferable that it has a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these. to the electrode 1006, the length obtained by subtracting the length where the electrode 1001 does not overlap with the electrode 1003 (let the length between the electrode 1006 and the electrode 1003 be Q2), that is, the length where the electrode 1003 and the electrode 1001 overlap is Q4. Let the distance from the contact portion of the electrode 1003 to the end of the electrode 1001 be Q5. Considering mask deviation, etc., it is preferable that Q4>0 and Q5>0. At this time, it is preferable that it has a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these. the length where the electrode 1003 and the electrode 1001 overlap is Q4. Let the distance from the contact portion of the electrode 1003 to the end of the electrode 1001 be Q5. Considering mask deviation, etc., it is preferable that Q4>0 and Q5>0. At this time, it is preferable that it has a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these. Considering mask deviation, etc., it is preferable that Q4>0 and Q5>0. At this time, it is preferable that it has a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these. Considering mask deviation, etc., it is preferable that Q4>0 and Q5>0. At this time, it is preferable that it has a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these. Considering mask deviation, etc., it is preferable that Q4>0 and Q5>0. At this time, it is preferable that it has a region such that Q1<Q4 and Q1<Q5. However, one aspect of this embodiment is not limited to these. However, one aspect of this embodiment is not limited to these.

[0247] For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps with the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps with the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps with the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps with the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps with the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode. For another example, it will be described using FIG. 35(B). In FIG. 35(B), the formation position of the electrode 1001 is different from that in FIG. 35(A). The electrode 1001 is electrically connected to the electrode 1003, partially overlaps with the region between the electrode 1003 and the electrode 1006, and is formed so as not to overlap with the electrode 1006. Also in FIG. 35(B), the electrode 1001 functions as an auxiliary electrode, the electrodes 1003 and 1006 function as pixel electrodes, and the electrode 1005 can function as a counter electrode.

[0248] Let the length between the electrode 1003 and the electrode 1006 be Q6. At the position overlapping with the region between the electrode 1003 and the electrode 1006, let the length of the region where the electrode 1001 is formed be Q7, Let the length between the electrode 1003 and the electrode 1006 be Q6. At the position overlapping with the region between the electrode 1003 and the electrode 1006, let the length of the region where the electrode 1001 is formed be Q7, Let the length of the region where the electrode 1001 is not formed be Q8. Note that Q6 > Q7 and Q 6 > Q8. Also, in order to apply an electric field to the display medium contained in the layer 1004 almost uniformly, it is preferable to have a region such that Q7 > Q8, but it is not limited thereto. Also, at a position overlapping with the region between the electrode 1003 and the electrode 1006, a region where the electrode 1001 is not formed is provided (Q8 > 0), and it can be formed to have a region such that Q3 > Q8. This can reduce the influence of crosstalk between the pixel (the pixel including the electrode 1003) and the adjacent pixel (the pixel including the electrode 10 06). Also, from the length from the portion (contact portion) where the wiring for electrically connecting the electrode 1003 and the electrode 1001 is provided to the electrode 1006, subtract the length between the electrode 1003 and the electrode 1006 (Q6), that is, let the length where the electrode 1003 and the electrode 1001 overlap be Q

[0249] 9. Let the distance from the contact portion of the electrode 1003 to the end of the electrode 1001 be Q10. Q9 and Q10 preferably have a region such that Q9 > 0 and Q10 > 0 in consideration of mask misalignment etc., but are not limited thereto. At this time, it is preferable to have a region that satisfies Q8 < Q9, Q8 < Q 10, Q7 < Q9, and Q7 < Q10, but is not limited thereto.

[0250]

[0251]

[0252]

[0253]

[0254]

[0255]

[0256]

[0257]

[0258]

[0259]

[0260]

[0261]

[0262]

[0263]

[0264]

[0265] <00Even if the electrode 1001 is formed, there is a gap between the electrode 1003 and the adjacent electrode 1006. As a result, an electric field is generated, and hence the afterimage is less likely to occur compared to when the electrode 1001 is not formed. Therefore, it is possible to manufacture a field-driven display device.

[0251] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. This can be done.

[0252] (Embodiment 8) In this embodiment, a manufacturing process of a display device using a TFT using amorphous silicon is described. The process will be explained.

[0253] As shown in FIG. 36(A), after forming a conductive film on a substrate 1100, the conductive film is By processing (patterning) into a shape, the electrode 1101, the electrode 1102, the conductive layer 1121 , and a conductive layer 1122 are formed on the substrate 1100. For example, barium borosilicate glass is formed on the substrate 1100. Glass substrates such as aluminoborosilicate glass, ceramic substrates, and plastic substrates The electrode 1101 and the electrode 1102 can function as gate electrodes. The electrode 1101, the electrode 1102, the conductive layer 1121, and the conductive layer 1122 can be formed. Examples of conductive films include titanium, molybdenum, tantalum, chromium, tungsten, and aluminum. Smoke, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium Indium, indium tin oxide (ITO), indium zinc oxide (IZO) , zinc oxide (ZnO), or tin oxide (SnO) by sputtering or CVD. The film can be formed in a single layer or multiple layers by a method such as a method for forming the film.

[0254] An insulating layer is formed to cover the electrode 1101, the electrode 1102, the conductive layer 1121, and the conductive layer 1122. The insulating film 1103 is formed using a silicon oxide-based material or a silicon nitride-based material. etc., and form a single layer or multiple layers by plasma CVD or sputtering etc. The insulating film 1103 can function as a gate insulating film. In addition, when the conductive layer 1121 and the conductive layer 1122 are made to function as electrodes of a storage capacitor, The insulating film 1103 formed in contact with the conductive layer functions as an insulating film for a storage capacitor. It is possible.

[0255] A semiconductor film 1104 is formed on the insulating film 1103. The thickness of the semiconductor film 1104 is 20 nm. The semiconductor film 1104 has a thickness of about 200 nm (preferably 50 nm to 150 nm). Amorphous silicon is deposited by photolithography, inkjet printing, or other methods. Form.

[0256] Next, a semiconductor film 1105 is formed over the semiconductor film 1104. The semiconductor film 1105 is made of phosphorus. Silicon containing the above, a semiconductor material having a higher conductivity than the semiconductor film 1104, etc. may be used. can.

[0257] The insulating film 1103 to the semiconductor film 1105 are formed in succession without being exposed to the air. In other words, it is possible to prevent contamination by atmospheric components and impurity elements floating in the air. Since each layer interface can be formed without any problems, variations in transistor characteristics are reduced. It is possible.

[0258] As shown in FIG. 36(B), a mask 1106 is formed, and the semiconductor film 1104 and the semiconductor film 1105 is processed (patterned) into a desired shape, and the semiconductor film 1104 and the semiconductor film 11 The semiconductor layer 1105 is separated into islands, and a semiconductor layer 1107 and a semiconductor layer 1108 are formed.

[0259] As shown in FIG. 36(C), after removing the mask 1106, a conductive film 1109 is formed. The conductive film 1109 is made of titanium, molybdenum, tantalum, chromium, tungsten, aluminum, Smoke, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO) are used for sputtering. It can be formed in a single layer or multiple layers by a deposition method, a CVD method or the like.

[0260] As shown in FIG. 36(D), a mask 1110 is formed. The mask 1110 is formed by removing the conductive film 1 By patterning 109, it can function as a source electrode or a drain electrode. This is a mask for forming a possible electrode, and at the same time removes a part of the semiconductor layer 1108. The conductive film 1 is also used as an etching mask for forming the channel region. The electrode 109 is patterned to form electrodes 1109a to 1109e. The electrode 1109d can function as an auxiliary electrode.

[0261] As shown in FIG. 36(E), after removing the mask 1110, an insulating film 1111 is formed. The insulating film 1111 is made of silicon nitride or the like by sputtering or glow discharge decomposition. By forming the insulating film 1111, the channel region can be protected. do.

[0262] The semiconductor layer 1107 includes a portion that functions as a channel region of a transistor. The semiconductor layer 1108 can function as the source and drain regions of the transistor. It is possible for the moiety to include a functional moiety.

[0263] Next, an insulating film 1112 is formed. The insulating film 1112 is made of a silicon oxide-based material or silicon nitride. Formed using silicon-based materials by plasma CVD or sputtering. The insulating film 1112 may be formed as a single layer or multiple layers using an organic material. For example, acrylic, polyimide, polyamide, polyimideamide, benzocyclobutene, The insulating film 1112 may be a laminate of an organic material and an inorganic material. Alternatively, a light-shielding material may be used as the insulating film 1112. Examples of materials having optical properties include carbon black and organic resins containing black pigments. Furthermore, it is preferable to provide an insulating film 1113 over the insulating film 1112. By forming the insulating film 1113, it is possible to prevent moisture from entering. It is preferable to use silicon or the like.

[0264] Next, the insulating films 1111, 1112, and 1113 are patterned to form an electrode. An opening is formed so that the electrode 1109b and the electrode 1109d are partially exposed. Electrode 1114 electrically connected to electrode 1109b at the portion The electrode 1114 and the electrode 1115 are used as pixel electrodes. It is possible to function.

[0265] As shown in FIG. 37, a layer 1116 and a conductive film 1119 are formed on the electrodes 1114 and 1115. , and a substrate 1120 is formed, disposed, or attached. 6 is a layer containing a display medium. Here, microcapsules 1118 are mixed with a dispersant 1117. A fixed configuration is shown.

[0266] The conductive film 1119 may be made of titanium, molybdenum, tantalum, chromium, tungsten, or aluminum. Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, Using ruthenium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), The conductive film 1119 can be formed as a single layer or a multilayer. is possible.

[0267] The substrate 1120 may be a plastic substrate, a resin substrate, a film substrate, a glass substrate, a ceramic substrate, or the like. A black substrate, a stainless steel substrate, a stainless steel foil substrate, etc. can be used.

[0268] As a result, a display device using amorphous silicon TFTs can be fabricated.

[0269] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. It should be noted that the contents described in this embodiment are merely examples and are not intended to limit the scope of the present invention. stomach.

[0270] (Embodiment 9) In this embodiment, a manufacturing process of a display device to which a TFT using an oxide semiconductor is applied will be described. I will explain.

[0271] As shown in FIG. 38(A), after forming a conductive film on a substrate 1300, the conductive film is By processing (patterning) into a shape, the electrode 1301, the electrode 1302, the conductive layer 1319 , and a conductive layer 1320 are formed on the substrate 1300. For example, barium borosilicate glass is formed on the substrate 1300. Glass substrates such as aluminoborosilicate glass, ceramic substrates, and plastic substrates The electrode 1301 and the electrode 1302 can function as gate electrodes. The electrode 1301, the electrode 1302, the conductive layer 1319, and the conductive layer 1320 are Examples of conductive films include titanium, molybdenum, tantalum, chromium, tungsten, and aluminum. Smoke, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium Indium, indium tin oxide (ITO), indium zinc oxide (IZO) , zinc oxide (ZnO), or tin oxide (SnO) by sputtering or CVD. The film can be formed in a single layer or multiple layers by a method such as a method for forming the film.

[0272] An insulating layer is formed to cover the electrode 1301, the electrode 1302, the conductive layer 1319, and the conductive layer 1320. The insulating film 1303 is made of a silicon oxide-based material or a silicon nitride-based material. etc., and form a single layer or multiple layers by plasma CVD or sputtering etc. The insulating film 1303 can function as a gate insulating film. In addition, when the conductive layer 1319 and the conductive layer 1320 are made to function as electrodes of a storage capacitor, The insulating film 1303 formed in contact with the conductive layer functions as an insulating film for a storage capacitor. It is possible.

[0273] A semiconductor film 1304 is formed over the insulating film 1303. The semiconductor film 1304 has a light-transmitting property. The semiconductor film 130 is formed in a single layer or in a multilayer using a material that has high transmittance or a material that has high light transmittance. The oxide semiconductor 4 is formed using an oxide semiconductor, for example, In—Ga—Zn -O series, In-Sn-Zn-O series, In-Al-Zn-O series, Sn-Ga-Zn-O series, Al-Ga-Zn-O series, Sn-Al-Zn-O series, In-Zn-O series, Sn-Zn-O Materials based on Al-Zn-O, In-O, Sn-O, and Zn-O can be used. The oxide semiconductor film is formed under a rare gas (typically, argon) atmosphere, an oxygen atmosphere, or a rare It is formed by sputtering in an atmosphere of gas (typically argon) and oxygen. In addition, when the sputtering method is used, silicon oxide is preferably added in an amount of 2% by weight or more. 0 wt % or less of a target containing SiO 2 , and the oxide semiconductor film is formed using the ... It is preferable to include silicon oxide, which inhibits crystallization. Before forming the semiconductor film 1304, argon gas is introduced to generate plasma. In this way, dust adhering to the surface of the insulating film 1303 can be removed. Reverse sputtering is a method of sputtering a substrate in an argon atmosphere without applying a voltage to the target side. A method of modifying the surface by applying voltage to the substrate side using an RF power supply to generate plasma near the substrate. Instead of the argon atmosphere, nitrogen, helium, oxygen, or the like may be used.

[0274] As shown in FIG. 38(B), a mask 1305 is formed, and the semiconductor film 1304 is formed into a desired shape. The semiconductor film 1304 is separated into islands, and the semiconductor layer 1306 is is formed.

[0275] As shown in FIG. 38(C), after removing the mask 1305, a conductive film 1307 is formed. The conductive film 1307 is made of titanium, molybdenum, tantalum, chromium, tungsten, aluminum, Smoke, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, germanium ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO) are used for sputtering. It can be formed in a single layer or multiple layers by a deposition method, a CVD method or the like.

[0276] As shown in FIG. 38(D), a mask 1308 is formed. The mask 1308 is formed by removing the conductive film 1 By patterning 307, it can function as a source electrode or a drain electrode. The conductive film 1307 is patterned to form the electrode 1. Electrodes 1309a to 1309e are used. Electrodes 1309b and 1309d are used as auxiliary electrodes. It is possible to function.

[0277] As shown in FIG. 38(E), after removing the mask 1308, an insulating film 1310 is formed. The insulating film 1310 is formed by plasma deposition using a silicon oxide material or a silicon nitride material. The insulating film 1310 can be formed by a CVD method, a sputtering method, or the like. The organic material may be formed as a single layer or multiple layers. For example, acrylic, polyimide, polyimide, Polyamide, polyimideamide, benzocyclobutene, epoxy, etc. can be used. The insulating film 1310 may have a stacked structure of an organic material and an inorganic material. A material having a light-shielding property may be used as the material 310. black, organic resin containing black pigment, etc. It is preferable to provide the insulating film 1311. By forming the insulating film 1311, it is possible to prevent the penetration of moisture. It is preferable to use silicon nitride or the like for the insulating film 1311. .

[0278] Next, the insulating film 1310 and the insulating film 1311 are patterned to form the electrode 1309b and the electrode 1309c. An opening is formed so that the electrode 1309d is partially exposed. Electrode 1312 electrically connected to electrode 1309b, and electrode 1313 electrically connected to electrode 1309d. The electrode 1312 and the electrode 1313 can function as pixel electrodes. is.

[0279] As shown in FIG. 39, a layer 1314 and a conductive film 1317 are formed on the electrodes 1312 and 1313. , and a substrate 1318 is formed, disposed, or attached. 4 is a layer containing a display medium. Here, microcapsules 1316 are mixed with a dispersant 1315. A fixed configuration is shown.

[0280] The conductive film 1317 may be formed of titanium, molybdenum, tantalum, chromium, tungsten, or aluminum. Aluminum, neodymium, copper, silver, gold, platinum, niobium, silicon, zinc, iron, barium, Using ruthenium, ITO, IZO, zinc oxide (ZnO), or tin oxide (SnO), The conductive film 1317 can be formed as a single layer or a multilayer. is possible.

[0281] The substrate 1318 may be a plastic substrate, a resin substrate, a film substrate, a glass substrate, a ceramic substrate, or the like. A laminated substrate, a stainless steel substrate, a stainless steel foil substrate, etc. can be used.

[0282] As described above, a display device using a TFT using an oxide semiconductor can be manufactured.

[0283] TFTs using oxide semiconductors have higher optical transparency than TFTs using amorphous silicon. When using TFTs that use oxide semiconductors, the wiring material must be transparent. It may be a display device in which the TFT substrate side is the display surface by using a material with high light transmittance or a material with high light transmittance. stomach.

[0284] The conductive layer 1319, the conductive layer 1320, the electrode 1309b, and the electrode 1309d are made of a transparent conductive material. It is also possible to form the electrode 1301 from a metal material and the electrode 1302 from a metal material. By forming the elements in the element from a transparent material, the aperture ratio can be improved. Furthermore, the resistance can be reduced by forming the wiring portion from a metal material.

[0285] Note that this embodiment mode may be implemented by being appropriately combined with any of the structures shown in other embodiment modes in this specification. It should be noted that the contents described in this embodiment are merely examples and are not intended to limit the scope of the present invention. stomach.

[0286] (Embodiment 10) The display device shown in the above embodiment can be used in any field of electronics as long as it displays information. For example, the display device described in the above embodiment can be used in a Sub-books (e-books), posters, in-car advertisements on trains and other vehicles, credit cards, etc. It is possible to display on various cards.

[0287] FIG. 41(A) shows a poster 1501 equipped with a display device. In the case of printed matter, the advertisements are exchanged manually. By using a display device, the advertisement display can be changed in a short time. The poster can also be configured to send and receive information wirelessly. good.

[0288] 41(B) shows an advertisement 1502 inside a vehicle such as a train. When the advertisement is printed on paper, the advertisement is exchanged manually. By using the display device shown, it is possible to change the display of advertisements in a short time without requiring a lot of manpower. In addition, stable images can be displayed without any distortion. It may be configured to be capable of transmitting and receiving information.

[0289] Fig. 42(A) shows an example of an electronic book. The electronic book shown in Fig. 42(A) has a housing. It consists of two housings, housing 1600 and housing 1601. 601 are integrated with a hinge 1604 and can be opened and closed. Such a configuration allows the device to operate like a paper book.

[0290] A display unit 1602 is incorporated in the housing 1600, and a display unit 1603 is incorporated in the housing 1601. The display unit 1602 and the display unit 1603 are configured to display a continuous screen. Alternatively, a different screen may be displayed. For example, a sentence is displayed on the right display unit (display unit 1602 in FIG. 42(A)) and An image can be displayed on the display unit on the side (display unit 1603 in FIG. 42A).

[0291] 42(A) shows an example in which the housing 1600 is provided with an operation unit, etc. The housing 1600 includes a power supply 1605, operation keys 1606, a speaker 1607, etc. The operation keys 1606 can be used to turn pages. The back of the housing may be provided with a keyboard, a pointing device, etc. External connection terminals (earphone terminal, USB terminal, AC adapter and USB) on the front or side It is equipped with a terminal that can be connected to various cables such as USB cable, a recording medium insertion section, etc. Furthermore, the electronic book shown in FIG. 42(A) may have a function as an electronic dictionary. It may also be configured so that

[0292] The electronic book shown in FIG. 42(A) may be configured to be capable of transmitting and receiving information wirelessly. The desired book data can be purchased and downloaded wirelessly from an electronic book server. It is also possible to make it

[0293] FIG. 42(B) shows an example of a digital photo frame. For example, FIG. 42(B) The digital photo frame shown in FIG. 1 has a display unit 1612 built into a housing 1611 . The display unit 1612 is capable of displaying various images, such as images from a digital camera. By displaying image data taken with the camera, it can function just like a regular photo frame. Cut.

[0294] The digital photo frame shown in FIG. 42(B) has an operation unit, an external connection terminal (US B terminal, terminals that can be connected to various cables such as USB cables), recording medium insertion port, etc. These components may be incorporated on the same surface as the display unit. However, it is preferable to have it on the side or back as this will improve the design. A memory that records image data taken with a digital camera into the recording medium insertion section of the frame. to capture image data, and display the captured image data on the display unit 1612. It is possible.

[0295] The digital photo frame shown in FIG. 42(B) is configured to be able to send and receive information wirelessly. It is also possible to wirelessly import and display desired image data. can.

[0296] FIG. 42(C) shows an example of a television device. The application device has a display unit 1622 built into a housing 1621. In addition, the stand 1623 is used to hold the case 162 The structure supports 1.

[0297] The television device shown in FIG. 42C is operated by an operation switch or the like provided on the housing 1621. This can be done using a separate remote control. The remote control can be used to control the channel and volume. In addition, the image displayed on the display unit 1622 can be controlled by the remote control. The remote control device may be provided with a display unit for displaying information output from the remote control device. .

[0298] The television device shown in FIG. 42(C) is configured to include a receiver, a modem, etc. The receiver can receive general television broadcasts and can also receive signals via a modem. By connecting to a wired or wireless communication network, The communication of information between a single person (sender) or two-way (between a sender and a receiver, or between receivers) It is also possible.

[0299] Figure 42(D) shows an example of a mobile phone. The mobile phone shown in Figure 42(D) has the following features: In addition to the display unit 1632 incorporated in the housing 1631, the operation buttons 1633 and 16 37, an external connection port 1634, a speaker 1635, a microphone 1636, etc.

[0300] In the mobile phone shown in FIG. 42(D), the display portion 1632 is a touch panel, and By touching the display unit 1632, the display contents of the display unit 1632 can be operated. Alternatively, an email can be created by touching the display unit 1632 with a finger or the like. do.

[0301] The screen of the display unit 1632 has three main modes. The first mode is for displaying images. The first mode is an input mode, which is primarily used for inputting information such as characters. The third mode is a combination of the display mode and the input mode. be.

[0302] For example, when making a call or creating an email, the display unit 1632 is used to input characters. The main input mode is to input characters displayed on the screen. It is preferable to display a keyboard or number buttons in most of the screen area of ​​the display unit 1632. I wish.

[0303] Also, the mobile phone shown in FIG. 42(D) has a gyro, acceleration sensor, etc., inside. By providing a detection device having a sensor that detects the orientation of the mobile phone (portrait or landscape), By disconnecting the power supply, the mode (or display information) of the display unit 1632 can be automatically switched. This can be done.

[0304] The screen mode can be switched by touching the display unit 1632 or by operating the housing 1631. The type of image displayed on the display unit 1632 can be selected by operating the operation button 1637. For example, the image signal to be displayed on the display unit can be switched by If the data is text, you can switch to display mode, and if it is text, you can switch to input mode. Cut.

[0305] In the input mode, the optical sensor of the display unit 1632 detects a signal and displays it. If there is no input by touch operation on the display unit 1632 for a certain period of time, the screen mode is changed to the input mode. Alternatively, the display mode may be switched from the normal mode to the display mode.

[0306] The display unit 1632 can also function as an image sensor. By touching the 632 with your palm or fingers, the image sensor captures your palm print, fingerprint, etc. In addition, the display unit has a backlight that emits near-infrared light or a near-infrared light. By using a sensing light source that emits external light, it is possible to capture images of finger veins, palm veins, etc. do.

[0307] This embodiment mode can be implemented by being appropriately combined with the configurations described in other embodiment modes. It is Noh.

[0308] (Embodiment 11) Although various examples are shown in other embodiments, in this embodiment, other implementations are Any change, modification, addition, deletion, replacement, or alteration of any or all of the content shown in the form. This embodiment shows an example of application or modification. This embodiment shows a different example from the content shown in the other embodiment. A detailed example of the contents shown in is shown. In this embodiment, the present invention will be described with reference to the examples of the superordinate concepts of the contents shown in the above. An example of the definition of the contents shown in the embodiment and other embodiments will be shown below.

[0309] Therefore, one aspect of the embodiment of the present invention is not limited to the content described in this embodiment. Not determined.

[0310] For example, a display element, a display device having a display element, a light-emitting element, and a light-emitting element The light emitting device may have various forms or may have various elements. An example of a display element, a display device, a light-emitting element, or a light-emitting device is an EL (electroluminescent) device. Luminescence) elements (EL elements including organic and inorganic materials, organic EL elements, inorganic EL elements ), LEDs (white LEDs, red LEDs, green LEDs, blue LEDs, etc.), transistors ( transistors that emit light in response to current), electron-emitting devices, liquid crystal devices, electronic ink, electrophoresis element, Grating Light Valve (GLV), Digital Micromirror Device (DM D) Piezoelectric ceramic displays, carbon nanotubes, etc., which are based on electromagnetic effects Some have display media with variable contrast, brightness, reflectance, transmittance, etc. An example of a display device using an EL element is an EL display. An example of a display device using the above is a field emission display (FED) or SED type flat panel display (SED: Surface-conduction El Display devices using liquid crystal elements include An example of such a device is a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display). LCDs (e.g., reflective LCDs, direct-view LCDs, projection LCDs) An example of a display device using electronic ink or electrophoretic elements is electronic paper. etc.

[0311] An example of an EL element is a device that includes an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. An example of an EL layer is a device that uses light emission (fluorescence) from singlet excitons. those that utilize emission from triplet excitons (phosphorescence), and those that utilize emission from singlet excitons ( those that utilize fluorescence and those that utilize light emission from triplet excitons (phosphorescence), Those formed by organic matter, those formed by inorganic matter, those formed by organic matter Those containing polymeric materials and those formed by inorganic materials, those containing low molecular weight materials, Some contain a mixture of polymeric and low molecular weight materials, while others contain a mixture of polymeric and low molecular weight materials. However, the present invention is not limited to this, and various EL elements can be used.

[0312] An example of an electron-emitting device is a device that extracts electrons by concentrating a high electric field on the cathode. Specifically, examples of electron-emitting devices include Spindt type and carbon nanotube (CN T) type, metal-insulator-metal laminated MIM (Metal-Insulator-Metal) MIS (Metal-Insulator) type, which is a stack of metal-insulator-semiconductor -Semiconductor type, MOS type, silicon type, thin film diode type, diamond Thin film types such as diamond type, metal-insulator-semiconductor-metal type, HEED type, EL type, porous silicon However, there are other types, including silicon type and surface conduction (SCE) type. A variety of elements can be used.

[0313] An example of electronic paper is one that is displayed by molecules (optical anisotropy, dye molecular orientation) etc.), those displayed by particles (electrophoresis, particle migration, particle rotation, phase change, etc.), Some are displayed by the movement of one edge of the film, while others are displayed by the coloring / phase change of molecules. These are indicated by molecular light absorption, or by spontaneous emission due to electron-hole combinations. Specifically, the driving method and materials of the electronic paper can be used. As for the elements, microcapsule electrophoresis, horizontal migration electrophoresis, vertical migration electrophoresis, Electrophoresis, spherical twist ball, magnetic twist ball, cylindrical twist ball method, charged toner -, electronic liquid powder (registered trademark), magnetophoretic type, magnetic heat sensitive type, electrowetting, light Scattering (transparent / opaque), cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bistability Nematic liquid crystal, ferroelectric liquid crystal, dichroic dye / liquid crystal dispersion type, movable film, leuco dye Decolorization, photochromic, electrochromic, electrodeposition, flexible However, there are other electronic paper and display methods, including but not limited to these. Here, microcapsule electrophoresis is used. This can solve the problem of particle aggregation and precipitation. It has advantages such as high response, high reflectivity, wide viewing angle, low power consumption, and memory properties.

[0314] In addition, display devices that require a light source, such as liquid crystal displays (transmissive liquid crystal displays), Transflective LCD displays, reflective LCD displays, direct-view LCD displays, projection LCD displays projection type liquid crystal display, display device using grating light valve (GLV), Examples of light sources for displays using digital micromirror devices (DMDs) include: Electroluminescence, cold cathode tube, hot cathode tube, LED, laser light source, mercury lamp, etc. However, it is not limited to this and various light sources can be used. can be done.

[0315] For example, transistors with various structures can be used. Therefore, there is no limitation on the type of transistor used. silicon, polycrystalline silicon, microcrystalline (microcrystalline, nanocrystalline, semi-amorphous Thin film transistors (TFTs) with non-single crystal semiconductor films, typically silicon There are various advantages to using TFT. For example, , and can be manufactured at lower temperatures than single crystal silicon, reducing manufacturing costs or The equipment can be made larger. Since the manufacturing equipment can be made larger, it is possible to manufacture on large substrates. Therefore, a large number of display devices can be manufactured at the same time, resulting in low manufacturing costs. Alternatively, since the manufacturing temperature is low, a substrate with low heat resistance can be used. Alternatively, a transistor can be fabricated on a light-transmitting substrate. The transistor can be used to control the light transmission through the display element. Because the film thickness is small, a part of the film forming the transistor can transmit light. Therefore, the aperture ratio can be improved.

[0316] In addition, when producing polycrystalline silicon, by using a catalyst (such as nickel), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. As a result, the gate driver circuit (scanning line driver circuit), the source driver circuit (signal line driver circuit) ), and signal processing circuits (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) on the board It can be integrally formed.

[0317] In addition, when manufacturing microcrystalline silicon, by using a catalyst (nickel, etc.), It is possible to further improve the crystallinity and manufacture transistors with good electrical characteristics. In this case, the crystallinity can be improved by simply applying heat treatment without laser irradiation. As a result, part of the source driver circuit (analog switch, etc.) and gate The gate driver circuit (scanning line driving circuit) can be formed integrally on the substrate. Therefore, if laser irradiation is not performed, unevenness in the crystallinity of silicon can be suppressed. Therefore, it is possible to display images with improved quality. However, the catalyst (nickel, etc.) It is possible to produce polycrystalline or microcrystalline silicon without using a silicon dioxide.

[0318] It should be noted that improving the crystallinity of silicon to make it polycrystalline or microcrystalline can be It is desirable to do this on the whole body, but it is not limited to this. The crystallinity of the silicon may be improved. For example, the peripheral circuit area, which is an area other than the pixel area, can be selectively irradiated. Only in the gate driver circuit and source driver circuit regions, or only in the source driver circuit regions, Even if the laser light is irradiated only on a part of the driver circuit (for example, an analog switch), As a result, the silicon crystals are formed only in the areas where high-speed circuitry is required. Since the pixel area does not need to operate at high speed, the crystalline Even if the pixel circuit is not improved, it can still operate without any problems. Therefore, the region where the crystallinity needs to be improved can be reduced, and the manufacturing process can be shortened. Therefore, the throughput can be improved and the manufacturing cost can be reduced. The number of manufacturing devices required can be reduced, which reduces manufacturing costs. .

[0319] Examples of transistors include ZnO, a-InGaZnO, SiGe, and GaA Compound semiconductors such as s, IZO, ITO, SnO, TiO, and AlZnSnO (AZTO) or a transistor having an oxide semiconductor, or a transistor having these compound semiconductors or oxide semiconductors. Thin film transistors can be used, which allows for lower manufacturing temperatures. This allows, for example, the manufacture of transistors at room temperature. A transistor is formed directly on a substrate with low resistance, such as a plastic substrate or a film substrate. These compound semiconductors or oxide semiconductors can be used for the transistor. It can be used not only for the channel portion but also for other purposes. These compound semiconductors or oxide semiconductors are used for wiring, resistor elements, pixel electrodes, or light-transmitting electrodes. They can be used as electrodes, etc. They can be formed or deposited simultaneously with transistors. This allows for cost reduction.

[0320] An example of a transistor is a transistor formed by an ink-jet method or a printing method. These can be used for manufacturing at room temperature, manufacturing at low vacuum, or can be manufactured on a large substrate. Therefore, it can be manufactured without using a mask (reticle). This allows the transistor layout to be easily changed. Alternatively, it can be manufactured without using resist, which reduces material costs and the number of processes. Or, since it is possible to provide a film only in the required area, it is possible to This method wastes less material and is less expensive than etching methods.

[0321] An example of a transistor is a transistor having an organic semiconductor or a carbon nanotube. This allows transistors to be mounted on a flexible substrate. A semiconductor device using such a transistor is highly resistant to shock. It can be made easier.

[0322] Note that transistors with various other structures can also be used. For example, transistors include MOS transistors, junction transistors, and bipolar transistors. A MOS transistor can be used as the transistor. By using this, the size of the transistor can be reduced. It is possible to mount a bipolar transistor as a transistor. This allows a large current to flow, making it possible to operate the circuit at high speed. It is also possible to combine MOS transistors and bipolar transistors on the same substrate. This makes it possible to achieve low power consumption, miniaturization, high-speed operation, etc. can.

[0323] For example, a transistor having a multi-gate structure with two or more gate electrodes is used. In the case of a multi-gate structure, the channel regions are connected in series. Therefore, multiple transistors are connected in series. The gate structure reduces the off-state current and improves the breakdown voltage of the transistor (improving reliability). Alternatively, a multi-gate structure can be used to separate the drain and source when operating in the saturation region. Even if the voltage between the drain and source changes, the current between the drain and source does not change much, and the slope is flat. The slope of the voltage-current characteristic is obtained. By utilizing the current characteristics, ideal current source circuits or active loads with very high resistance can be realized. As a result, it is possible to realize a differential circuit or a current mirror circuit with good characteristics. It is possible.

[0324] An example of a transistor is a transistor having a structure in which gate electrodes are arranged above and below a channel. A transistor with a structure in which gate electrodes are arranged above and below the channel can be applied. By using this structure, the circuit configuration becomes like multiple transistors connected in parallel. This increases the channel area, which can increase the current value. By using a structure in which gate electrodes are placed above and below the Therefore, the S value can be improved.

[0325] An example of a transistor is a transistor in which a gate electrode is disposed above a channel region. a structure in which the gate electrode is located below the channel region, a forward staggered structure, an inverted staggered structure a structure in which the channel region is divided into a plurality of regions, a structure in which the channel regions are connected in parallel, or A transistor having a structure in which channel regions are connected in series can be used.

[0326] An example of a transistor is a transistor in which a source electrode or a A transistor with an overlapping drain electrode can be used. By using a structure in which the source electrode and drain electrode overlap the channel This can prevent unstable operation caused by charge accumulation in a part of the capacitor region.

[0327] As an example of a transistor, a structure provided with an LDD region can be applied. By providing a region, the off-state current can be reduced or the withstand voltage of the transistor can be improved (reliability can be improved). Alternatively, by providing an LDD region, it is possible to , even if the voltage between the drain and source changes, the drain current does not change much, and the slope is A flat voltage-current characteristic can be obtained.

[0328] For example, a transistor can be formed using various substrates. The substrate is not limited to a specific one. An example of the substrate is a semiconductor substrate (e.g., a single Crystal substrate or silicon substrate), SOI substrate, glass substrate, quartz substrate, plastic substrate, Metal substrate, stainless steel substrate, substrate with stainless steel foil, tongue Tungsten substrate, tungsten foil substrate, flexible substrate, laminated film, fiber Examples of glass substrates include paper or substrate films containing fibrous materials. Examples of glass include borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates include polyethylene terephthalate (PET), polyethylene naphtha Plastics such as polyethersulfone (PEN) and polyethersulfone (PES), Examples of lamination films include flexible synthetic resins such as acrylic. , polypropylene, polyester, vinyl, polyvinyl fluoride, or polyvinyl chloride. Examples of the base film include polyester, polyamide, polyimide, inorganic vapor deposition film, and the like. In particular, semiconductor substrates (e.g., single crystal substrates) or SOI substrates By manufacturing transistors using a substrate, etc., it is possible to achieve a wide range of characteristics, size, shape, etc. It is possible to manufacture transistors with low fluctuations, high current capacity, and small size. When a circuit is constructed using such transistors, the power consumption of the circuit can be reduced or High integration can be achieved.

[0329] It is also possible to form a transistor using a certain substrate and then transfer the transistor to another substrate. The transistor may be placed on one of the substrates to which the transistor is transferred. Examples include substrates on which the above-mentioned transistors can be formed, as well as paper substrates, ceramic substrates, and the like. Fan substrate, stone substrate, wood substrate, fabric substrate (natural fibers (silk, cotton, hemp), synthetic fibers (nylon) , polyurethane, polyester) or regenerated fiber (acetate, cupra, rayon, These substrates include recycled polyester, leather substrates, and rubber substrates. By using this, it is possible to form transistors with good characteristics and low power consumption. This allows for the manufacture of devices that are less likely to break, heat resistant, lightweight, or thin.

[0330] All circuits required to realize a given function are mounted on the same substrate (e.g., glass It can be formed on a substrate such as a silicon substrate, a plastic substrate, a single crystal substrate, or an SOI substrate. This reduces the cost by reducing the number of components, or reduces the number of connections to circuit components. This can improve reliability.

[0331] It is possible that not all of the circuits required to realize a given function are formed on the same substrate. In other words, part of the circuitry required to achieve a given function can be formed on a certain substrate. Another part of the circuitry required to realize a given function is formed on a different substrate. For example, some of the circuits required to realize a given function can be Another part of the circuitry required to realize a specific function is formed on the single crystal substrate. It can be formed on a substrate (or SOI substrate) and realizes a predetermined function. The single crystal substrate (also called an IC chip) on which another part of the circuitry required for (Chip On Glass) connects to the glass substrate and Alternatively, the IC chip can be mounted on a TAB (Tape Au tomated Bonding), COF(Chip On Film), SMT(S Surface Mount Technology) or a printed circuit board. In this way, part of the circuit is formed on the same substrate as the pixel section. This reduces the number of components, thereby reducing costs, and This reduces the number of circuits, which improves reliability. Also, circuits with high drive frequencies often consume a lot of power. Therefore, such a circuit is formed on a substrate (for example, a single crystal substrate) separate from the pixel section, and By using this IC chip, it is possible to prevent an increase in power consumption. can.

[0332] For example, one pixel refers to one element whose brightness can be controlled. A color element refers to one color element, and the brightness is expressed by that color element alone. In the case of a color display device having R (red), G (green), and B (blue) color components, The minimum unit is assumed to consist of three pixels: an R pixel, a G pixel, and a B pixel. However, the color elements are not limited to three colors, and more than three colors may be used, and colors other than RGB may be used. For example, adding white to create RGBW (W is white) is also possible. For example, you can add one or more colors such as yellow, cyan, magenta, emerald green, and vermilion to GB. Or, you can add a color similar to at least one color in RGB to R. It is possible to add R, G, B1, B2 to GB. For example, B1 and B 2 and R1 are both blue, but have slightly different wavelengths. By using such color elements, it is possible to display a more realistic image. By using such color elements, it is possible to reduce power consumption. Cut.

[0333] When controlling the brightness of one color element using multiple areas, For example, when performing area gradation or when using a sub-pixel (subpixel), If the image has multiple color elements (pixels), there are multiple areas that control the brightness for each color element. In this case, one area for controlling brightness is used as one pixel. In other words, one color element is made up of multiple pixels. However, even if there are multiple areas that control brightness within one color element, they can be grouped together. Alternatively, one color element may be one pixel. In this case, one color element is composed of one pixel. It is possible to control the brightness of one color element using multiple regions. In this case, the size of the area that contributes to the display may differ depending on the pixel. In the brightness control area, which has multiple signals for each color element, the signal supplied to each is slightly In other words, the viewing angle can be widened by changing the color of each color element. In addition, the potentials of the pixel electrodes of the plurality of regions may be different from each other. As a result, the voltage applied to the liquid crystal molecules varies depending on the pixel electrode. can be widened.

[0334] When explicitly describing one pixel (three colors), the three pixels of R, G, and B are considered to be one pixel. When explicitly describing one pixel (one color), it refers to one color element. Therefore, when there are multiple regions, they are considered as one pixel.

[0335] For example, pixels may be arranged (arranged) in a matrix. Arranged (arranged) in a matrix means that the pixels are arranged in a straight line in the vertical or horizontal direction. This includes cases where the devices are arranged side by side or in a jagged line. Therefore, for example, if you want to display full color using three color elements (for example, RGB), , if the dots of the three color elements are arranged in a stripe, This includes cases where the image is arranged in a Bayer pattern or a mosaic pattern. The size of the display area may be different for each element dot. This reduces power consumption. This can increase the display quality or extend the life of the display element.

[0336] For example, an active matrix type having active elements in pixels, or A passive matrix method without the above can be used.

[0337] In the active matrix system, the active element (active element, nonlinear element) is a transistor. By using not only transistors but also various active elements (active elements, nonlinear elements), For example, MIM (Metal Insulator Metal) or T It is also possible to use FD (Thin Film Diode) and other elements. Since the number of manufacturing steps is small, it is possible to reduce manufacturing costs and improve yields. Alternatively, these elements can improve the aperture ratio due to their small size. This makes it possible to achieve low power consumption and high brightness.

[0338] Other than the active matrix type, active elements (active elements, nonlinear elements) It is also possible to use a passive matrix type that does not use active elements (active elements). Since it does not use any nonlinear elements, there are fewer manufacturing steps, which reduces manufacturing costs and improves yield. Alternatively, active elements (active elements, non-linear elements) can be used. Since the aperture ratio is not increased, it is possible to achieve low power consumption or high brightness. This can be done.

[0339] For example, a transistor is a transistor that has at least three gates, a drain, and a source. The drain (also called drain terminal, drain region, or drain A channel region is provided between the source (source terminal, source region or source electrode) and the and allows current to flow through the drain, the channel region, and the source. Here, the source and drain may vary depending on the structure or operating conditions of the transistor. Therefore, it is difficult to determine which is the source and which is the drain. The part that functions as a source and the part that functions as a drain are called the source and the drain, respectively. In this case, for example, one of the source and the drain may be connected to the first terminal and the second terminal. The other of the source and drain is referred to as a second terminal, a second electrode, or a first region. is sometimes referred to as the second region.

[0340] The transistor has at least three terminals including a base, an emitter, and a collector. In this case, the element may also have one of an emitter and a collector. The first terminal, the first electrode, or the first region is referred to as the emitter or the collector. It may be written as the second terminal, the second electrode, or the second region. When a polar transistor is used, the term gate can be interchangeably referred to as base. It is Noh.

[0341] For example, a gate is a gate electrode and a gate wiring (gate line, gate signal line, scanning line, scanning The term refers to the entire structure including the gate electrode and the gate electrode (also called the scan signal line, etc.), or a part of them. The gate insulating film is a part that overlaps the semiconductor that forms the channel region. However, part of the gate electrode is LDD (Lightly Doped). ped Drain) region, or source region (or drain region) and gate insulating film The gate wiring is the gate of each transistor. Wiring for connecting between the gate electrodes of each pixel, wiring for connecting between the gate electrodes of each pixel This refers to a wiring for connecting a line or gate electrode to another wiring.

[0342] However, there is a part (area) that functions as both a gate electrode and a gate wiring. Such parts (regions, conductive films, wiring, etc.) are called gate electrodes. It can be called a gate electrode or a gate wiring. There are also areas where it is difficult to clearly distinguish between the lines and the gates. If a part of the port wiring overlaps with the channel region, that part (region, conductive film , wiring, etc.) functions as a gate wiring, but also functions as a gate electrode. Therefore, such a part (region, conductive film, wiring, etc.) can be called a gate electrode. It's fine, and you can call it gate wiring.

[0343] It is made of the same material as the gate electrode and forms the same island as the gate electrode. The connected part (region, conductive film, wiring, etc.) may also be called a gate electrode. The gate wiring is made of the same material as the gate wiring and forms the same island as the gate wiring. The connected portion (region, conductive film, wiring, etc.) may also be called the gate wiring. In the strict sense, the areas (regions, conductive films, wiring, etc.) overlap with the channel region. In some cases, the gate electrode does not have a function to connect to another gate electrode. However, due to manufacturing specifications, the gate electrode or gate wiring is made of the same material. The area that forms the same island as the gate electrode or gate wiring and is connected to it (area Therefore, such parts (regions, conductive films, wiring, etc.) are also It may also be called a gate electrode or gate wiring.

[0344] For example, in a multi-gate transistor, one gate electrode and another gate In many cases, the electrode is connected to the gate electrode through a conductive film made of the same material. The necessary parts (regions, conductive films, wiring, etc.) connect one gate electrode to another. Since it is a part (region, conductive film, wiring, etc.) for Since a transistor with a double-gate structure can be considered as one transistor, the gate voltage In other words, it is made of the same material as the gate electrode or gate wiring, and The part (region, conductive area) that forms the same island as the electrode or gate wiring and is connected to it. The gate electrode or gate wiring may be called a gate electrode or a gate wiring. The conductive film is a part that connects the electrode and the gate wiring. A conductive film formed of a material different from the gate electrode may also be called a gate electrode or a gate wiring. But that's okay.

[0345] The gate terminal refers to the part of the gate electrode (region, conductive film, wiring, etc.) or the gate electrode. Regarding the part (area, conductive film, wiring, etc.) that is electrically connected to the electrode, It is said that.

[0346] Note that a certain wiring may be referred to as a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, or the like. When a transistor is connected to a wiring, the gate of the transistor may not be connected to the wiring. In this case, the gate wiring, gate line, gate signal line, scanning line, or scanning signal line is Wiring formed in the same layer as the gate, wiring formed in the same material as the transistor gate, Or it may mean wiring formed at the same time as the gate of a transistor. Examples include a storage capacitor wiring, a power supply line, and a reference potential supply wiring.

[0347] The source includes the source region, the source electrode, and the source wiring (source line, source signal line, It refers to the whole or part of the data line, data signal line, etc. The source region is formed by doping P-type impurities (such as boron or gallium) or N-type impurities (such as phosphorus or arsenic). Therefore, it refers to a semiconductor region that contains a large amount of P-type impurities and N-type impurities. The region containing the object, known as the LDD (Lightly Doped Drain) region The source electrode is often made of a different material than the source region. The term "conductive layer" refers to a portion of the conductive layer that is formed and disposed so as to be electrically connected to the source region. However, the source electrode may also be called the source electrode, including the source region. indicates wiring for connecting the source electrodes of each transistor, and indicates the source electrode of each pixel. or a wiring for connecting a source electrode to another wiring. say.

[0348] However, there is a part ( There are also regions, conductive films, wiring, etc. Such parts (regions, conductive films, wiring, etc.) It can be called a source electrode or a source wiring. There are also areas where it is difficult to clearly distinguish between wiring and other components. When a part of the source wiring overlaps with the source region, that part (region, conductive The film, wiring, etc.) functions as a source wiring, but also functions as a source electrode. Therefore, such a part (region, conductive film, wiring, etc.) is called a source electrode. It may also be called the source wiring.

[0349] It is made of the same material as the source electrode and forms the same island as the source electrode. The parts that are connected by the source electrode (regions, conductive films, wiring, etc.), The part (region, conductive film, wiring, etc.) that overlaps with the source region or the part (region The source electrode may also be made of the same material as the source wiring. The area that is connected to the source wiring and forms the same island is also called the source wiring. Such parts (areas, conductive films, wiring, etc.) are, in the strict sense, However, there are cases where the function of connecting to another source electrode is not provided. In this respect, the source electrode or source wiring is formed of the same material, and the source electrode or source wiring is formed of the same material. There are parts (areas, conductive films, wiring, etc.) that are connected to the semiconductor wiring. The component (region, conductive film, wiring, etc.) may also be called a source electrode or source wiring.

[0350] For example, the conductive film in the portion connecting the source electrode and the source wiring is A conductive film formed of a material different from the source electrode or source wiring can also be called a source electrode. That's fine, you can call it source wiring.

[0351] The source terminal may be a source region, a source electrode, or a terminal electrically connected to the source electrode. It refers to a part of a circuit (such as an area, conductive film, or wiring).

[0352] Note that a certain wiring may be referred to as a source wiring, a source line, a source signal line, a data line, a data signal line, etc. When referring to a transistor, even if the source (drain) of the transistor is not connected to the wiring, In this case, the source wiring, source line, source signal line, data line, and data signal line are Wiring formed in the same layer as the source (drain) of the transistor, At the same time as the wiring or transistor source (drain) made of the same material It may refer to a deposited wiring. Examples include wiring for storage capacitors, power supply lines, and reference There are potential supply wirings, etc.

[0353] The drain is the same as the source.

[0354] For example, a semiconductor device is a semiconductor element (transistor, diode, thyristor, etc.) However, it is possible to function by utilizing the semiconductor properties. Devices in general, or devices that include semiconductor materials, may be referred to as semiconductor devices.

[0355] Note that the display device refers to a device having a display element. The display device may include a plurality of pixels including a plurality of pixels. The peripheral driving circuit for driving a plurality of pixels may include a plurality of The display device may be formed on the same substrate as the pixel. Peripheral drive circuits arranged on the substrate by, for example, chip-on-glass (COG) It may include an IC chip connected by a wire or an IC chip connected by a tab or the like. The display device may include IC chips, resistors, capacitors, inductors, transistors, etc. The circuit may include a flexible printed circuit (FPC) to which The display device is connected via a flexible printed circuit (FPC) or other device, and the IC chip A printed circuit board on which chips, resistors, capacitors, inductors, transistors, etc. are mounted. The display device may include a polarizing plate or a retardation plate. The display device may include an illumination device, a housing, an audio input / output device, an optical sheet, and the like. It may also include an optical sensor.

[0356] The lighting device includes a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflector, It has a reflecting sheet, light source (LED, cold cathode fluorescent lamp, etc.), cooling device (water-cooled, air-cooled), etc. That's fine.

[0357] The light-emitting device refers to a device having a light-emitting element or the like. When a light emitting device has a light element, the light emitting device is a specific example of a display device.

[0358] The reflecting device is a device having a light reflecting element, a light diffracting element, a light reflecting electrode, etc. This is what is meant.

[0359] Note that the liquid crystal display device refers to a display device having a liquid crystal element. There are direct-view, projection, transmissive, reflective, and semi-transmissive types.

[0360] The driving device refers to a device that has semiconductor elements, electric circuits, and electronic circuits. For example, a transistor (selection transistor) that controls the input of a signal from a source signal line to a pixel (sometimes called a transistor or switching transistor) and supplies voltage or current to the pixel electrode. The transistors that supply a voltage or current to the light-emitting element are Furthermore, a circuit for supplying a signal to the gate signal line (a gate driver, a gate a circuit that supplies signals to the source signal lines (sometimes called a source line driver circuit, etc.), A driver (sometimes called a source line driver circuit) is an example of a driver.

[0361] In addition, the present invention is applicable to display devices, semiconductor devices, lighting devices, cooling devices, light-emitting devices, reflecting devices, driving devices, etc. For example, a display device may include a semiconductor device and a light emitting device. Alternatively, the semiconductor device may have a display device and a driving device. This may be the case.

[0362] For example, if you explicitly state that X and Y are connected, it means that X and Y are electrically When X and Y are connected, when X and Y are functionally connected, and when X and Y are directly connected Here, X and Y are objects (e.g., devices, elements, (circuit, wiring, electrode, terminal, conductive film, layer, etc.). For example, the present invention is not limited to the connection relationships shown in the drawings or text, but includes the connection relationships shown in the drawings or text. This also includes relationships other than continuity relationships.

[0363] An example of the case where X and Y are electrically connected is The elements that function as One or more diodes (e.g., diodes) can be connected between X and Y.

[0364] An example of a functional connection between X and X is a functional connection between X and Y. Circuits that perform functions (e.g., logic circuits (inverters, NAND circuits, NOR circuits, etc.)), signal Conversion circuits (DA conversion circuits, AD conversion circuits, gamma correction circuits, etc.), potential level conversion circuits ( Power supply circuits (boost circuits, step-down circuits, etc.), level shifter circuits that change the signal potential level, etc. ), voltage sources, current sources, switching circuits, amplifier circuits (which can increase the signal amplitude or current amount, etc.) circuits, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation One or more circuits (synthesis circuit, memory circuit, control circuit, etc.) can be connected between X and Y. For example, even if another circuit is inserted between X and Y, the signal output from A If the signal is transmitted to B, then X and Y are said to be functionally connected.

[0365] When it is explicitly stated that X and Y are electrically connected, it means that X and Y are electrically connected. When X and Y are electrically connected (i.e., when another element or circuit is inserted between X and Y) X and Y are functionally connected (i.e., there is no connection between X and Y) When X and Y are connected directly, the two are functionally connected via another circuit. (That is, when X and Y are connected without any other element or circuit between them) In other words, when it is explicitly stated that something is electrically connected, it is not simply The same applies if the document is explicitly stated as being connected to the

[0366] For example, it is not possible to explicitly state that Y is formed on top of X, or that Y is formed on top of X. When specifically describing the structure, it is not limited to the structure in which Y is directly formed on X. This also includes cases where they are not in contact, i.e., when another object is between X and Y. Here, X and Y are the object (e.g., device, element, circuit, wiring, electrode, terminal, conductive film, layer, etc.).

[0367] Therefore, for example, it is not possible to explicitly state that layer Y is formed on (or on) layer X. In the cases described, it means that layer Y is formed directly on layer X, and that layer Y is formed on layer X. Another layer (e.g., layer Z) is formed directly adjacent to it, and layer Y is formed directly on top of it. It should be noted that another layer (e.g., layer Z) may be a single layer. Alternatively, a multi-layer (laminated) structure may be used.

[0368] Furthermore, the same applies to cases where it is explicitly stated that Y is formed above X. It is not limited to Y being directly on top of X, and there is another object between X and Y. For example, a layer Y is formed above a layer X. In this case, layer Y is formed directly on layer X, and layer Y is formed directly on layer X. Another layer (e.g., layer Z) is formed on top of it, and layer Y is formed directly on top of it. The other layer (for example, layer Z) may be a single layer or , and may be multi-layered (laminated).

[0369] In addition, Y is formed on X, Y is formed on X, or Y is above X. When explicitly stating that something is formed, this also includes the case where Y is formed diagonally above X. Let's say.

[0370] The same applies to the case where there is a Y below an X, or a Y below an X.

[0371] For example, if something is expressly stated as singular, it is preferable that it be singular. However, it is not limited to this and plural numbers are also possible. It is preferable that the items listed as "items" be plural. However, this is not limited to this. It is also possible for the number to be singular.

[0372] For example, terms such as first, second, third, etc. may refer to various elements, members, regions, layers, or sections in relation to one another. Therefore, the terms first, second, third, etc. are used to distinguish between elements. The number of elements, regions, layers, areas, etc. is not limited. can be replaced with "second" or "third", etc.

[0373] For example, "up," "upward," "down," "downward," "sideways," "right," "left." ", "diagonally," "in the back," "in front," "inside," "outside," or "inside" spaces A phrase indicating a geometric arrangement is used to graphically and simply show the relationship of one element or feature to another. It is often used simply to show, but is not limited to, these spatial arrangements The phrase "x" can include directions other than those shown in the drawing. For example, When explicitly stated as "Y above," this does not mean that Y is limited to being above X. The chair can be flipped or rotated 180 degrees, so Y must be below X. In this way, the word "on" can be used to express the direction of "on" as well as the direction of "under." It is possible to include directions. However, it is not limited to this, and the devices in the figures can rotate in various directions 所以 "向上" 这个术语,可以包括 "向上" 以及 "向下" 的方向 [(This is because the devices in the figures can rotate in various directions, so the term "upward" can include the directions of "upward" and "downward")] In addition, other directions such as "horizontally", "to the right", "to the left", "diagonally", "inward", "outward", "inward", "outward", or "inside" etc. can also be included. That is, it can be appropriately interpreted according to the situation [(That is, it can be appropriately interpreted according to the situation)]

[0374] In addition, in the figures or texts described in a certain embodiment, it is possible to extract a part of them to constitute an aspect of the invention. Therefore, when a figure or text describing a certain part is provided, the content extracted from a part of the figure or text is also disclosed as an aspect of the invention and can constitute an aspect of the invention [(is also disclosed as an aspect of the invention and can constitute an aspect of the invention)] shall be so. Therefore, for example, active elements (such as transistors, diodes, etc.), wirings, passive elements (such as capacitive elements, resistive elements, etc.), conductive layers, insulating layers, semiconductor layers, organic materials, inorganic materials, components substrates, modules, devices, solids, liquids, gases, operation methods, manufacturing methods, etc. are described as single or multiple in the drawings (cross-sectional views, plan views, circuit diagrams, block diagrams, flowcharts, process diagrams, perspective views, elevation views, layout diagrams, timing charts, structure diagrams, schematic diagrams, graphs, tables, optical path diagrams, vector diagrams, state diagrams, waveform diagrams, photographs, chemical formulas, etc.) or texts, it is possible to extract a part of them to constitute an aspect of the invention. As an example, from a circuit diagram composed of N (N is an integer) circuit elements (such as transistors, capacitive elements, etc.), M ( M is an integer and M < N) circuit elements (such as transistors, capacitive elements, etc.) are extracted to constitute an aspect of the invention. As another example, a structure having N (N is an integer) layers From the cross-sectional view that is formed, it is possible to extract M (M is an integer, M < N) layers and constitute one aspect of the invention. As another example, from a flowchart composed of N (N is an integer) elements, it is possible to extract M (M is an integer, M < N) elements and constitute one aspect of the invention. From the flowchart composed of N (N is an integer) elements, it is possible to extract M (M is an integer, M < N) elements and constitute one aspect of the invention.

[0375] In addition, in the figures or text described in a certain embodiment, when at least one specific example is described, it is easily understood by those skilled in the art to derive the upper concept of that specific example. Therefore, in the figures or text described in a certain embodiment, when at least one specific example is described, the upper concept of that specific example is also disclosed as one aspect of the invention and can constitute one aspect of the invention. In addition, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described using text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention.

[0376] In addition, at least the content described in the figure (even a part in the figure) is disclosed as one aspect of the invention and can constitute one aspect of the invention. Therefore, for a certain content, if it is described in the figure, even if it is not described using text, that content is disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for a figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention. Similarly, for a figure obtained by extracting a part of the figure, it is also disclosed as one aspect of the invention and can constitute one aspect of the invention.

Explanation of Reference Numerals

[0377] 100 Electrode 101 Electrode 102 Layer 103 Dispersant 104 Microcapsule 105 Particle 106 Particle​​​​​​ 107 Electric Field 108 Electric Field 109 Electrode 110 insulating film 111 Wiring 112 insulating film 113 Contact Hole 114 Electrode 115 insulating film 116 Contact Hole 200 electrodes 201 Insulating film 202 Electrode 203 layers 204 Electrode 205 Wiring 206 Insulating film 300 boards 301 Electrode 302 Electrode 303 Electrode 304 Wiring 305 Insulating film 306 Semiconductor layer 306a Semiconductor layer 306b Semiconductor layer 307 Semiconductor Layer 307a Semiconductor layer 307b Semiconductor layer 308 Semiconductor layer 308a Semiconductor layer 308b Semiconductor layer 309 Conductive Layer 310 Conductive layer 311 Conductive layer 312 Conductive layer 313 Conductive Layer 314 Conductive Layer 315 Insulating Film 316 Electrode 317 Electrode 318 Electrode 319 layers 320 Microcapsules 321 Dispersants 322 Electrode 323 Substrate 330 Gate Line 331 Gate Line 332 Semiconductor layer 333 Semiconductor Layer 334 Semiconductor layer 335 Conductive Layer 336 Conductive Layer 337 Conductive Layer 338 Electrode 339 Electrode 340 electrode 341 Wiring 342 Conductive Layer 343 Conductive Layer 344 Conductive Layer 345 Electrode 346 Electrode 347 Electrode 350 areas 351 areas 352 areas 353 areas 400 conductive layer 401 Insulating film 402 Conductive layer 403 Insulating film 404 Electrode 405 layers 406 Electrode 500 insulating film 501 Electrode 502 insulating film 503 Electrode 504 layers 505 Electrode 506B insulating film 506G insulating film 506R insulating film 510 insulating film 510B insulating film 510G insulating film 510R insulating film 511 Electrode 512 insulating film 512B insulating film 512G insulating film 512R insulating film 513 Electrode 514 layers 515 Electrode 516 Insulating film 520 board 521 layers 522 Electrode 523 Insulating film 524 Electrode 525 layers 526 Electrode 527 PCB 528 Polarizing Plate 529 Polarizing Plate 530B Color Filter 530G Color Filter 530R Color Filter 531B Color Filter 531G Color Filter 531R Color Filter 600 boards 601 Micro Cup 602 Dielectric Solvent 603 Charged pigment particles 604 Sealing layer 605 Electrode 606 Insulating film 607 Electrode 608 Electrode 609 Substrate 700 boards 701 Bulkhead 702 Electronic Liquid Powder (registered trademark) 703 Electronic Liquid Powder (registered trademark) 704 Electrode 705 insulating film 706 Electrode 707 Electrode 708 PCB 800 boards 801 Semiconductor layer 802 Semiconductor layer 803 insulating film 804 gate electrode 805 gate electrode 806 insulating film 807 Electrode 808 Electrode 809 Electrode 810 electrode 811 Insulating film 812 Electrode 813 Electrode 814 layers 815 Electrode 816 PCB 817 Conductive layer 818 Conductive layer 819 Conductive layer 820 Conductive layer 851 Electrode 852 Electrode 853 Electrode 854 Electrode 855 Electrode 856 Electrode 857 Electrode 858 Electrode 859 Electrode 860 electrode 861 Electrode 900 boards 901 Gate electrode 902 Gate insulating film 903 Electrode 904 Electrode 905 Semiconductor layer 906 Insulating film 907 Electrode 908 layers 909 Electrode 910 Protective Body 911 Electrode 912 Conductive layer 920 board 921 Gate electrode 922 Gate insulating film 923 Semiconductor layer 924 Electrode 925 Electrode 926 Insulating Film 927 Electrode 928 layers 929 electrode 930 Protective Body 931 Electrode 932 Conductive layer 940 board 941 Gate electrode 942 Gate insulating film 943 Semiconductor layer 944 Channel protection film 945 Electrode 946 Electrode 947 Insulating Film 948 Electrode 949 layers 950 electrode 951 Protective Body 952 Electrode 953 Conductive layer 1001 Electrode 1002 insulating film 1003 Electrode 1004 layers 1005 Electrode 1006 Electrode 1100 board 1101 Electrode 1102 Electrode 1103 Insulating film 1104 Semiconductor film 1105 Semiconductor film 1106 Mask 1107 Semiconductor layer 1108 Semiconductor layer 1109 Conductive film 1109a electrode 1109b Electrode 1109c electrode 1109d electrode 1109e electrode 1110 Mask 1111 insulating film 1112 insulating film 1113 insulating film 1114 Electrode 1115 Electrode 1116 layers 1117 Dispersants 1118 Microcapsules 1119 Conductive film 1120 board 1121 Conductive layer 1122 Conductive layer 1200 board 1201 Electrode 1202 Wiring 1203 insulating film 1204 Semiconductor layer 1204a Semiconductor layer 1204b Semiconductor layer 1205 Conductive layer 1206 Conductive layer 1207 Insulating film 1208 Conductive layer 1209 Insulating film 1210 Conductive layer 1211 Conductive layer 1212 layers 1213 Conductive layer 1214 Protective body 1215 Gate Line 1216 Gate Line 1217 Electrode 1218 Electrode 1219 Wiring 1220 Semiconductor layer 1221 Semiconductor layer 1222 Semiconductor layer 1223 Semiconductor layer 1224 Semiconductor layer 1225 Conductive layer 1226 Conductive layer 1227 Conductive layer 1228 Conductive layer 1229 Conductive layer 1230 Conductive layer 1231 Conductive layer 1232 Conductive layer 1233 Conductive layer 1234 Conductive layer 1235 Conductive layer 1236 Conductive layer 1237 Conductive layer 1238 Conductive layer 1239 Conductive layer 1240 Conductive layer 1241 Conductive layer 1242 Conductive layer 1243 Conductive layer 1300 board 1301 Electrode 1302 Electrode 1303 Insulating film 1304 Semiconductor film 1305 Mask 1306 Semiconductor layer 1307 Conductive film 1308 Mask 1309a electrode 1309b Electrode 1309c electrode 1309d electrode 1309e electrode 1310 insulating film 1311 insulating film 1312 Electrode 1313 Electrode 1314 layers 1315 Dispersants 1316 Microcapsules 1317 Conductive film 1318 PCB 1319 Conductive layer 1320 Conductive layer 1401 Gate electrode 1402 gate electrode 1403 Gate Line 1404 Gate Line 1405 Semiconductor layer 1406 Semiconductor layer 1407 Source electrode 1408 Drain electrode 1409 Source electrode 1410 Electrode 1411 Electrode 1412 Electrode 1413 Electrode 1414 Electrode 1415 Electrode 1416 Electrode 1417 Electrode 1451 Gate electrode 1452 gate electrode 1453 Gate Line 1454 Gate Line 1455 Semiconductor layer 1456 Semiconductor layer 1457 Source electrode 1458 Drain electrode 1459 Source Electrode 1460 electrode 1461 Electrode 1462 Electrode 1463 Electrode 1464 Electrode 1465 Electrode 1466 Electrode 1467 Electrode 1501 Poster 1502 In-car advertising 1600 chassis 1601 Case 1602 Display section 1603 Display section 1604 Hinge 1605 Power supply 1606 Operation Key 1607 Speaker 1611 Case 1612 Display section 1621 Case 1622 Display section 1623 Stand 1631 Case 1632 Display section 1633 Operation button 1634 external connection port 1635 Speaker 1636 Mike 1637 Operation button

Claims

[Claim 1] Two adjacent first electrodes; A second electrode; and A third electrode; and a charged particle disposed between the two first electrodes and the second electrode; the third electrode is provided between the two first electrodes and the second electrode, and is electrically connected to one of the two first electrodes; the third electrode at least partially overlaps one of the two first electrodes via an insulating film; The electric field driving display device, wherein the third electrode at least partially overlaps the other of the two first electrodes via the insulating film.

Images