Sputtering apparatus

Abstract

To provide a sputtering apparatus capable of improving the use efficiency of a planar target.SOLUTION: A sputtering apparatus 1 comprises a cathode 30, a sputtering gas supply part 50, a first power supply part 60, and a magnet part 40. The cathode 30 includes a planar target 31. The sputtering gas supply part 50 supplies a sputtering gas between the target 31 and a film deposition object. The first power supply part 60 applies a sputtering voltage to the cathode 30. The magnet part 40 forms a magnetic field on a first main surface 31a side of the target 31. The magnet part 40 includes a plurality of rotation parts 41 and a rotation driving part 46. Each of the plurality of rotation parts 41 includes a plurality of magnets 42 which are arranged along a circumferential direction with respective to respective rotation axes Q1 to form a magnetic field. The rotation driving part 46 rotates the plurality of rotation parts 41 around the respective rotation axes Q1 to change the magnetic field.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a sputtering apparatus. [Background technology]

[0002] Conventionally, sputtering devices for forming a thin film on a surface of a substrate have been proposed (for example, Patent Document 1). In Patent Document 1, the sputtering device includes a chamber, a substrate holding unit, a sputtering unit, a plasma unit, and a suction mechanism. The suction mechanism suctions gas from within the chamber to reduce the pressure inside the chamber.

[0003] The internal space of the chamber is composed of sputtering spaces and plasma spaces alternately arranged along the circumferential direction about a predetermined revolution axis. The substrate holder revolves the substrate around the revolution axis to move the substrate alternately between the sputtering space and the plasma space. The sputtering section includes a flat target in the sputtering space, and while supplying a sputtering gas to the sputtering space, converts the sputtering gas into plasma and causes ions to collide with the target. The plasma section supplies a reactive gas to the plasma space in the chamber and converts the reactive gas into plasma.

[0004] As the substrate passes through the sputtering space, sputtered particles from the target are deposited on the substrate, and as the substrate passes through the plasma space, the sputtered particles deposited on the substrate react with the reactive gas to form a thin film on the substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2022-083129 Summary of the Invention [Problem to be solved by the invention]

[0006] In order to improve the sputtering speed, a magnet unit may be provided near the surface of a flat target to generate a magnetic field. The magnetic field can enclose electrons. In particular, the magnetic flux component parallel to the main surface of the substrate can contribute to the enclosing of electrons. The enclosing of electrons can improve the electron density in the magnetic field. Therefore, ions in the plasma with high electron density mainly collide with the main surface of the substrate, and sputtering of the substrate is performed.

[0007] However, since the magnetic flux components face a portion of the main surface of the substrate in a plan view, sputtering mainly occurs on that portion, and not so much on the other portions of the main surface of the substrate, resulting in a problem of reduced efficiency in using the flat target.

[0008] Therefore, an object of the present disclosure is to provide a sputtering apparatus capable of improving the utilization efficiency of a flat target. [Means for solving the problem]

[0009] A first aspect is a sputtering apparatus comprising: a cathode including a plate-shaped target having a first main surface facing an object to be film-formed and a second main surface opposite the first main surface; a sputtering gas supply unit that supplies a sputtering gas between the target and the object to be film-formed; a power supply unit that applies a sputtering voltage to the cathode; and a magnet unit that is provided on the second main surface side of the target and forms a magnetic field on the first main surface side of the target, the magnet unit including a plurality of rotating units arranged along an arrangement direction along the first main surface of the target, and a rotation drive unit, each of the plurality of rotating units including a plurality of magnets that form the magnetic field and are arranged along a circumferential direction about a respective rotation axis along an axial direction that intersects the arrangement direction, and the rotation drive unit rotates the plurality of rotating units around their respective rotation axes to change the magnetic field.

[0010] A second aspect is a sputtering apparatus according to the first aspect, wherein the multiple magnets are arranged with their magnetic pole faces of alternating polarity in the circumferential direction facing radially outward about the rotation axis, and the rotational drive unit rotates two adjacent ones of the multiple rotating units in opposite directions to each other.

[0011] A third aspect is a sputtering apparatus according to the first or second aspect, wherein the multiple rotating parts are three or more rotating parts, and in each of the multiple rotating parts, the multiple magnets are arranged on a respective virtual circle, and a diameter of the virtual circle of a first rotating part located at an end of the three or more rotating parts is larger than a diameter of the virtual circle of a second rotating part located other than the end of the three or more rotating parts.

[0012] A fourth aspect is a sputtering apparatus according to any one of the first to third aspects, wherein the multiple rotating parts are three or more rotating parts, and in each of the multiple rotating parts, the multiple magnets are arranged on a virtual circle, and the uppermost point of the virtual circle of a first rotating part located at an end of the three or more rotating parts, which is closest to the target in the thickness direction of the target, is closer to the target than the uppermost point of the virtual circle of a second rotating part located other than the end of the three or more rotating parts.

[0013] A fifth aspect is a sputtering apparatus according to the third or fourth aspect, wherein the first rotating part is provided in a position not facing the target in the thickness direction of the target, and the second rotating part is provided in a position facing the target in the thickness direction of the target.

[0014] A sixth aspect is a sputtering apparatus according to any one of the first to fifth aspects, further comprising a plasma generator provided on both sides of the axial direction between the multiple rotating parts in a planar view, the plasma generator converting the sputtering gas into plasma and supplying electrons to the magnetic field.

[0015] A seventh aspect is a sputtering apparatus according to the sixth aspect, wherein the plasma generator includes an inductively coupled antenna.

[0016] An eighth aspect is a sputtering apparatus according to any one of the first to seventh aspects, wherein at least one of the multiple rotating parts is provided with a magnet holding part that holds the multiple magnets, and the multiple magnets protrude outward beyond the outer circumferential surface of the magnet holding part. Effect of the Invention

[0017] According to the first aspect, a sputtering voltage is applied to the target, and the sputtering gas is turned into plasma. In the magnetic field on the first main surface side of the target, electrons are surrounded by magnetic flux components, particularly along the first main surface. Therefore, sputtering of the first main surface of the target is mainly performed by ions in the magnetic field. As the rotating part rotates around the rotation axis, the magnetic field on the first main surface side of the target changes, so that sputtering can be performed over a wider range on the first main surface of the target. This can increase the utilization efficiency of the target.

[0018] According to the second aspect, even when the rotating parts rotate, the magnetic flux component parallel to the first main surface due to the flow of magnetic flux between the rotating parts can be maintained, so that the sputtering apparatus can more appropriately sputter the target.

[0019] According to the third and fourth aspects, it is possible to widen a certain interval in which the integral value is constant in the spatial distribution of the integral value of the magnetic flux components in the period required for the rotating part to make one rotation.

[0020] According to the fifth aspect, it is easy to make the integral value of the magnetic flux components constant over the entire first main surface of the target.

[0021] According to the sixth aspect, even if electrons moving in the magnetic field along the axial direction move outward from the magnetic field, the plasma generator supplies electrons to the magnetic field, so that a decrease in electron density in the magnetic field can be suppressed.

[0022] According to the seventh aspect, plasma with high electron density can be generated.

[0023] According to the eighth aspect, an air flow is generated by the rotation of the rotating part, and the target can be air-cooled by the air flow. [Brief description of the drawings]

[0024] [Figure 1] 1 is a side view illustrating an example of a configuration of a sputtering apparatus according to an embodiment. [Diagram 2] 1 is a plan view illustrating an example of a configuration of a sputtering apparatus according to an embodiment. [Diagram 3] 4 is a diagram illustrating an example of magnetic flux components when a first rotating part is located at a first rotation position. FIG. [Figure 4] 6 is a diagram illustrating an example of magnetic flux components when the second rotating part is located at a second rotation position. FIG. [Diagram 5] 4A to 4C are diagrams illustrating an example of magnetic flux components at each rotation position. [Figure 6] 11 is a graph showing an example of a time integral value of a magnetic flux component. [Figure 7] 5A and 5B are diagrams illustrating an example of a state in which a first rotating part and a second rotating part are rotating. [Figure 8] 6 is a diagram illustrating an example of a state in which a first rotating part and a second rotating part according to a comparative example are rotating. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, an embodiment will be described with reference to the accompanying drawings. Note that the components described in this embodiment are merely examples, and are not intended to limit the scope of the present disclosure to only those. In the drawings, the dimensions or numbers of each part may be exaggerated or simplified as necessary for ease of understanding. In addition, each drawing shows an XYZ orthogonal coordinate system to explain the directions. Hereinafter, one side of the X direction will also be called the +X side, and the other side of the X direction will also be called the -X side. The same applies to the Y direction and the Z direction.

[0026] Furthermore, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0027] When an expression indicating a relative or absolute positional relationship (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) is used, the expression not only strictly indicates the positional relationship, but also indicates a state in which the relative positional relationship is displaced with respect to angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) is used, the expression not only strictly indicates a quantitatively equal state, but also indicates a state in which a difference exists within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) is used, the expression not only strictly indicates the shape geometrically, but also indicates a shape having, for example, unevenness or chamfering within a range in which a similar effect is obtained, unless otherwise specified. When an expression "comprises," "has," "includes," "includes," or "has" a component is used, the expression is not an exclusive expression that excludes the presence of other components. When the phrase "at least one of A, B, and C" is used, the phrase includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0028] <Sputtering equipment> Fig. 1 is a side view that shows a schematic example of the configuration of a sputtering apparatus 1 according to an embodiment. Fig. 2 is a plan view that shows a schematic example of the configuration of a sputtering apparatus 1 according to an embodiment. Fig. 2 shows a cross section taken along line II-II in Fig. 1.

[0029] The sputtering apparatus 1 is a film formation apparatus that performs a film formation process by sputtering on a film formation target (here, a substrate 9). In the example of FIG. 1, the substrate 9 has a plate-like shape and has a main surface 91 and a main surface 92. The main surface 91 and the main surface 92 are main surfaces of the substrate 9 on opposite sides. The substrate 9 may be a substrate for a semiconductor device, or may be another substrate. In the example of FIG. 1, the substrate 9 is supported or held in the sputtering apparatus 1 in a horizontal position with the main surface 92 facing downward. The horizontal position here refers to a position in which the thickness direction of the substrate 9 is along the Z direction.

[0030] 1, the sputtering apparatus 1 includes a target 31, a magnet unit 40, a first power supply unit 60, and a sputtering gas supply unit 50. In the example of FIG. 1, the sputtering apparatus 1 further includes a chamber 10, a substrate support unit 20, a high vacuum exhaust system 13, a plasma generator 70, a chimney 80, and a control unit 90.

[0031] The chamber 10 has a hollow box shape. The internal space of the chamber 10 corresponds to a processing space in which a film formation process is performed on the substrate 9. The chamber 10 may also be called a vacuum chamber. The chamber 10 is a hollow member having, for example, a rectangular parallelepiped outer shape, and is provided with one side aligned along the X direction. The chamber 10 is provided with, for example, a loading / unloading port (not shown). The substrate 9 can be loaded and unloaded between the chamber 10 and the outside through the loading / unloading port.

[0032] 1, the substrate 9 is supported or held by the substrate support part 20 with the main surface 92 exposed downward inside the chamber 10. As a specific example, the periphery of the substrate 9 is made detachable by claw-shaped members or the like provided on the lower surface of the substrate support part 20.

[0033] A high vacuum exhaust system 13 is connected to the chamber 10. The high vacuum exhaust system 13 is controlled by a control unit 90 and reduces the pressure in the internal space of the chamber 10. The high vacuum exhaust system 13 includes, for example, a vacuum pump, an exhaust pipe, and an exhaust valve, all of which are not shown. One end of the exhaust pipe is connected to the vacuum pump, and the other end is connected to the chamber 10. The exhaust valve is provided midway along the exhaust pipe. The exhaust valve is, for example, a valve that can automatically adjust the flow rate of gas flowing through the exhaust pipe. In this configuration, when the exhaust valve is opened while the vacuum pump is operating, gas is exhausted from the internal space of the chamber 10.

[0034] The target 31 is provided in the chamber 10 at a position facing the main surface 92 of the base material 9 in the Z direction. The target 31 has a plate-like (specifically, flat) shape and has a first main surface 31a and a second main surface 31b. The first main surface 31a and the second main surface 31b are main surfaces of the target 31 on opposite sides. It can also be said that the first main surface 31a and the second main surface 31b are main surfaces facing each other in the thickness direction of the target 31. The target 31 is provided with the first main surface 31a facing the base material 9. In the example of FIG. 2, the first main surface 31a and the second main surface 31b of the target 31 have a rectangular shape (for example, a square shape) in a plan view. One side of the target 31 can be set to, for example, about several hundred mm. The thickness of the target 31 can be set to, for example, about 10 mm. A material containing a component in the thin film to be formed on the main surface 92 of the base material 9 is applied to the material of the target 31. As a specific material for the target 31, for example, a metal containing at least one of mercury (Hg), gallium (Ga), indium (In), and tin (Sn) can be applied.

[0035] As shown in FIG. 1, a target support 32 may be provided in the chamber 10. The target support 32 supports or holds the target 31 in a horizontal position. The horizontal position here means a position in which the thickness direction of the target 31 is along the Z direction. The target support 32 supports or holds the target 31 in a state in which the first main surface 31a of the target 31 on the substrate 9 side is exposed. If the melting point of the target 31 is low, the target 31 may become liquid. For example, as described below, ions collide with the first main surface 31a of the target 31, thereby increasing the temperature of the target 31. If the melting point of the target 31 is low, the target 31 may become liquid. In this case, the target support 32 has a dish-like shape and stores the liquid target 31. The target support 32 may be conductive. Hereinafter, the part including the target 31 and the target support 32 is also referred to as the cathode 30. The cathode 30 is also referred to as a planar cathode. When the target 31 is in a liquid state, the first main surface 31a may be the liquid surface.

[0036] The sputtering gas supply unit 50 supplies the sputtering gas to the internal space of the chamber 10. More specifically, the sputtering gas supply unit 50 supplies the sputtering gas between the substrate 9 and the target 31. The sputtering gas includes, for example, a rare gas. For example, at least one of argon gas and xenon gas can be applied as the rare gas. The sputtering gas supply unit 50 may supply a reactive gas to the internal space of the chamber 10 together with the sputtering gas. The reactive gas is a gas that includes a component in the thin film to be formed on the main surface 92 of the substrate 9. The reactive gas includes, for example, at least one of nitrogen gas and oxygen gas. For example, when the target 31 is a gallium target and nitrogen gas is applied as the reactive gas, the sputtering apparatus 1 can form a gallium nitride (GaN) film on the main surface 92 of the substrate 9 as described later.

[0037] In the example of FIG. 1, the sputtering gas supply unit 50 includes a nozzle 51, an air supply pipe 52, and a valve 53. The nozzle 51 is provided in the chamber 10. In the example of FIG. 1, the nozzle 51 is provided in a position in the Z direction between the substrate 9 and the target 31. The nozzle 51 may be provided outside the substrate 9 in a plan view. As shown in FIG. 1, a plurality of nozzles 51 (two in the figure) may be provided. The nozzles 51 are provided on opposite sides of the substrate 9 in the X direction. The nozzles 51 have an outlet and discharge the sputtering gas from the outlet. The air supply pipe 52 branches midway, and each downstream end is connected to the nozzle 51. The upstream end of the air supply pipe 52 is connected to a gas supply source. The gas supply source supplies the sputtering gas to the upstream end of the air supply pipe 52. The gas supply source may supply a reactive gas to the upstream end of the air supply pipe 52 together with the sputtering gas. The valve 53 is provided in the air supply pipe 52. The valve 53 adjusts the flow rate of the gas flowing through the air supply pipe 52. The valve 53 is, for example, a mass flow controller. The valve 53 is controlled by the control unit 90.

[0038] The first power supply unit 60 is a power supply that applies a sputtering voltage to the cathode 30. The first power supply unit 60 has an output terminal 60a and an output terminal 60b. The output terminal 60a is electrically connected to the target support portion 32 of the cathode 30, and the output terminal 60b is, for example, grounded. The first power supply unit 60 includes a power supply circuit such as a switching power supply circuit, and applies a sputtering voltage including a negative voltage to the cathode 30. That is, the potential of the output terminal 60a of the first power supply unit 60 is smaller than the potential of the output terminal 60b. The sputtering voltage may be a constant negative voltage or may be a pulse voltage. Alternatively, the first power supply unit 60 may output an AC voltage as the sputtering voltage. The sputtering voltage is also referred to as a target voltage, a cathode applied voltage, or a bias voltage, as alternative expressions. Note that, when the target 31 is conductive, the target support portion 32 may not be conductive. In this case, the output terminal 60a of the first power supply unit 60 is electrically connected to the target 31. The output of the first power supply unit 60 is controlled by the control unit 90 .

[0039] A sputtering voltage is applied to the cathode 30, and the sputtering gas around the cathode 30 is turned into plasma. Ions in the plasma (e.g., argon ions) move toward the target 31 due to the negative voltage of the cathode 30, and collide with the first main surface 31a of the target 31. This collision causes sputtered particles (e.g., gallium) to fly out of the target 31 and move toward the substrate 9. The sputtered particles are deposited on the main surface 92 of the substrate 9. When a reactive gas is supplied into the chamber 10, the sputtered particles (e.g., gallium) are deposited on the main surface 92 of the substrate 9 while reacting with the reactive gas (e.g., nitrogen gas). As a result, a thin film (e.g., a gallium nitride film) is formed on the main surface 92 of the substrate 9.

[0040] The magnet section 40 is provided on the opposite side of the substrate 9 with respect to the cathode 30. In the example of FIG. 1, the magnet section 40 is provided outside the chamber 10, specifically below the floor of the chamber 10. In other words, the magnet section 40 can be provided in an atmospheric pressure space. The atmospheric pressure space here refers to a pressure space with a higher pressure than the pressure inside the chamber 10 during the film formation process. The atmospheric pressure space can be, for example, a space at about standard atmospheric pressure.

[0041] The magnet unit 40 forms a magnetic field on the first main surface 31a side of the target 31. Specifically, the magnet unit 40 forms a magnetic field in a space facing the first main surface 31a of the target 31. Since the magnetic field can enclose electrons, plasma with a high electron density can be generated inside the magnetic field. Therefore, sputtering is substantially performed on the part of the first main surface 31a of the target 31 facing the magnetic field. In particular, the magnetic flux component of the magnetic field that is parallel to the first main surface 31a of the target 31 contributes to enclosing the electrons. As described later, the magnet unit 40 can move the magnetic field to, for example, the entire surface of the first main surface 31a of the target 31. Therefore, the sputtering device 1 can perform sputtering on, for example, the entire first main surface 31a of the target 31. An example of a specific configuration of the magnet unit 40 will be described later in detail.

[0042] The plasma generator 70 is provided outside the target 31 in a plan view. The plasma generator 70 generates plasma inside the chamber 10 and supplies electrons to the magnetic field above the first main surface 31a of the target 31. A specific example of the plasma generator 70 will be described in detail later.

[0043] The chimney 80 is provided inside the chamber 10 and surrounds the cathode 30. The chimney 80 is made of a non-magnetic material (e.g., non-magnetic steel, etc.). The chimney 80 includes an overhanging portion 81 and a sidewall 82. The lower end of the sidewall 82 is fixed to the floor of the chamber 10. The sidewall 82 extends along the Z direction. The upper end of the sidewall 82 is located between the main surface 92 of the base material 9 and the first main surface 31a of the target 31 in the Z direction. The overhanging portion 81 is connected to the upper end of the sidewall 82. The overhanging portion 81 has a plate-like shape and is provided with its thickness direction along the Z direction. An opening 81a is formed in the overhanging portion 81. The opening 81a is provided at a position facing the target 31 in the Z direction and penetrates the overhanging portion 81 in the Z direction. Sputtered particles from the target 31 move toward the main surface 92 of the base material 9 through the opening 81a. By providing the chimney 80, it is possible to suppress the diffusion of sputtered particles from the target 31 into the chamber 10.

[0044] The control unit 90 controls various components of the sputtering apparatus 1. The control unit 90 is an electronic circuit device and may have, for example, a data processing device and a storage unit. The data processing device may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit may have a non-transient storage unit (for example, a ROM (Read Only Memory) or a hard disk) and a temporary storage unit (for example, a RAM (Random Access Memory)). The non-transient storage unit may store, for example, a program that defines the processing to be executed by the control unit 90. The data processing device executes this program, so that the control unit 90 can execute the processing defined in the program. Of course, a part or all of the processing executed by the control unit 90 may be executed by a hardware circuit such as a logic circuit.

[0045] <Magnet section> As shown in FIG. 1, the magnet unit 40 includes a plurality of rotating units 41 and a rotation drive unit 46. In the example of FIG. 1, a first rotating unit 41A, a second rotating unit 41B, and a third rotating unit 41C are shown as the plurality of rotating units 41. The plurality of rotating units 41 are arranged at intervals in an arrangement direction (here, the X direction) along the first main surface 31a of the base material 9. In the example of FIG. 1, the first rotating unit 41A is a rotating unit 41 located at the end on the -X side among the plurality of rotating units 41, and the third rotating unit 41C is a rotating unit 41 located at the end on the +X side. The second rotating unit 41B is a rotating unit 41 provided at a position other than the end among the plurality of rotating units 41. That is, in the example of FIG. 1, the second rotating unit 41B is provided between the first rotating unit 41A and the third rotating unit 41C.

[0046] Each rotating part 41 includes a plurality of magnets 42. In the example of FIG. 1, the number of magnets 42 belonging to the rotating part 41 is the same among the plurality of rotating parts 41. That is, the number of magnets 42 in the first rotating part 41A, the second rotating part 41B, and the third rotating part 41C is the same. In the example of FIG. 1, each rotating part 41 includes four magnets 42. Each magnet 42 is, for example, a permanent magnet. In the first rotating part 41A, the plurality of magnets 42 are arranged at intervals along the circumferential direction about the rotation axis Q1A. In the second rotating part 41B and the third rotating part 41C, the magnets 42 are arranged in the same manner as in the first rotating part 41A. That is, in the second rotating part 41B, the plurality of magnets 42 are arranged along the circumferential direction about the rotation axis Q1B, and in the third rotating part 41C, the plurality of magnets 42 are arranged along the circumferential direction about the rotation axis Q1C. The rotation axis Q1A, the rotation axis Q1B, and the rotation axis Q1C are axes that extend along an axial direction (e.g., the Y direction) that intersects with the arrangement direction (here, the X direction). In the example of FIG. 1, the axial direction is a direction that is perpendicular to the arrangement direction and along the first main surface 31a of the target 31. The rotation axis Q1A, the rotation axis Q1B, and the rotation axis Q1C are, for example, parallel to each other. Hereinafter, the rotation axis Q1A, the rotation axis Q1B, and the rotation axis Q1C are also collectively referred to as the rotation axis Q1.

[0047] The specifications of the magnets 42 may be the same. For example, the shape, size, and surface magnetic flux density of the magnets 42 may be the same among the magnets 42. The length of the magnets 42 in the Y direction is set to, for example, about several hundred mm, and the lengths of the magnets 42 along the radial and circumferential directions about the rotation axis Q1 are each set to, for example, about several tens of mm. The surface magnetic flux density of the magnets 42 is set to, for example, about 1000 mT.

[0048] 1 and 2, the magnet 42 has an elongated rectangular parallelepiped shape with the axial direction (here, the Y direction) along the rotation axis Q1 as the longitudinal direction. As shown in FIG. 2, the length of the magnet 42 along the rotation axis Q1 is longer than the width of the target 31 along the rotation axis Q1. Therefore, in a plan view, both ends of the rotating part 41 (magnet 42) in the axial direction are located outside the target 31 in the axial direction. In other words, in a plan view, the end on the +Y side of the rotating part 41 (magnet 42) is located on the +Y side of the target 31 in the Y direction, and the end on the -Y side of the rotating part 41 (magnet 42) is located on the -Y side of the target 31 in the Y direction.

[0049] Each magnet 42 has a pole face 42a and a pole face 42b. The pole faces 42a and 42b are opposite to each other in the radial direction about the rotation axis Q1. The pole faces 42a and 42b have different magnetic polarities. For example, the pole face 42a is a north pole and the pole face 42b is a south pole. The magnet 42 may have, for example, a rectangular parallelepiped shape and be disposed with one side aligned in the circumferential direction of the rotation axis Q1.

[0050] 1, in each rotating part 41, the multiple magnets 42 are provided with magnetic pole faces of alternating polarities in the circumferential direction facing radially outward. In other words, next to a magnet 42 provided with magnetic pole face 42a facing radially outward, a magnet 42 with magnetic pole face 42b facing radially outward is provided. In this case, an even number of magnets 42 are arranged in each rotating part 41. In each rotating part 41, the multiple magnets 42 can be arranged at equal intervals around the rotation axis Q1.

[0051] In the example of FIG. 1, the initial arrangement positions of the magnets 42 are the same among the rotating parts 41. As a specific example, in FIG. 1, in each rotating part 41, two of the four magnets 42 are aligned in the Z direction with respect to the rotation axis Q1, and the remaining two are aligned in the X direction with respect to the rotation axis Q1. However, between two adjacent rotating parts 41, the corresponding magnets 42 have different magnetic pole faces facing radially outward. For example, in the first rotating part 41A, the magnet 42 located on the upper side with respect to the rotation axis Q1A has a magnetic pole face 42a facing radially outward. On the other hand, in the second rotating part 41B adjacent to the first rotating part 41A, the magnet 42 located on the upper side with respect to the rotation axis Q1B has a magnetic pole face 42b facing radially outward. In addition, in the third rotating part 41C adjacent to the second rotating part 41B, the magnet 42 located on the upper side with respect to the rotation axis Q1C has the magnetic pole surface 42a facing radially outward. In other words, the magnets 42 corresponding to each other in the two adjacent rotating parts 41 are provided with different magnetic pole surfaces facing radially outward.

[0052] 1, magnetic flux flows between the magnetic pole face 42a of the magnet 42 located above the first rotating part 41A and the magnetic pole face 42b of the magnet 42 located above the second rotating part 41B, and magnetic flux flows between the magnetic pole face 42b of the magnet 42 located above the second rotating part 41B and the magnetic pole face 42a of the magnet 42 located above the third rotating part 41C. This magnetic flux passes through a magnetic field space facing the first main surface 31a of the target 31. Therefore, a magnetic field is formed in the magnetic field space.

[0053] In the example of FIG. 1, the first rotating part 41A and the third rotating part 41C located at the ends of the magnet part 40 are provided at positions that do not face the target 31 in the Z direction. In addition, the second rotating part 41B located between the first rotating part 41A and the third rotating part 41C of the magnet part 40 is provided at a position facing the target 31 in the Z direction. In the example of FIG. 1, the second rotating part 41B faces the center part of the target 31 in the X direction in the Z direction. In the example of FIG. 1, the distance in the X direction between the first rotating part 41A and the second rotating part 41B is equal to the distance in the X direction between the second rotating part 41B and the third rotating part 41C. The distance is set to, for example, about several hundred mm.

[0054] In the example of FIG. 1, the size of the first rotating part 41A and the third rotating part 41C located at the ends is different from the size of the second rotating part 41B located between the first rotating part 41A and the third rotating part 41C. Here, the size of the rotating part 41 is introduced as the diameter of a virtual circle on which the multiple magnets 42 are arranged. The virtual circle may be, for example, a virtual circle passing through the radially outer magnetic pole surface of the magnet 42. The diameter of the virtual circle of the first rotating part 41A is larger than the diameter of the virtual circle of the second rotating part 41B, and similarly, the diameter of the virtual circle of the third rotating part 41C is larger than the diameter of the virtual circle of the second rotating part 41B. The diameter of the virtual circle of the first rotating part 41A may be equal to the diameter of the virtual circle of the third rotating part 41C. In this case, the difference in the diameter of the imaginary circle between the first rotating part 41A and the third rotating part 41C is a manufacturing error and is smaller than the difference in the diameter of the imaginary circle between the first rotating part 41A and the second rotating part 41B and the difference in the diameter of the imaginary circle between the second rotating part 41B and the third rotating part 41C. The diameter of the imaginary circle of the rotating part 41 is set to, for example, on the order of a hundred mm.

[0055] In the example of FIG. 1, the uppermost imaginary point (hereinafter referred to as the uppermost point P1) of the imaginary circle of the first rotating part 41A is located above the uppermost point P1 of the second rotating part 41B. In other words, the uppermost point P1 of the first rotating part 41A is located closer to the target 31 in the Z direction than the uppermost point P1 of the second rotating part 41B. The difference in the Z direction positions of the uppermost point P1 of the first rotating part 41A and the uppermost point P1 of the second rotating part 41B can be set to, for example, about several mm. Similarly, the uppermost point P1 of the third rotating part 41C is located above the uppermost point P1 of the second rotating part 41B. The position of the uppermost point P1 of the first rotating part 41A in the Z direction may be equal to the position of the uppermost point P1 of the third rotating part 41C in the Z direction. In this case, the difference in the Z-direction position of the uppermost point P1 between the first rotating part 41A and the third rotating part 41C is a manufacturing error and is smaller than the difference in the Z-direction position of the uppermost point P1 between the first rotating part 41A and the second rotating part 41B and the difference in the Z-direction position of the uppermost point P1 between the second rotating part 41B and the third rotating part 41C.

[0056] In the example of FIG. 1, each rotating part 41 includes a magnet holding part 43. The magnet holding part 43 is a part that holds a plurality of magnets 42. For example, the magnet holding part 43 has a cylindrical shape centered on the rotation axis Q1. Each magnet 42 is attached to an outer peripheral surface 43a of the magnet holding part 43. In the example of FIG. 1, a plurality of recesses are formed on the outer peripheral surface 43a. Each recess has a recessed shape recessed toward the rotation axis Q1 side (i.e., radially inward). A magnet 42 is embedded in each recess. In the example of FIG. 1, the magnet 42 protrudes radially outward from the outer peripheral surface 43a of the magnet holding part 43. The magnet holding part 43 may be formed of a soft magnetic material (e.g., iron). In this case, the magnet holding part 43 can function as a yoke.

[0057] The rotating parts 41 are provided so as to be rotatable about their respective rotation axes Q1. For example, the magnet holders 43 are rotatably fixed to a support member (not shown) erected on the floor surface of the chamber 10 via a predetermined bearing (not shown).

[0058] The rotation drive unit 46 rotates the rotating parts 41 around their respective rotation axes Q1. Specifically, the rotation drive unit 46 rotates the first rotating part 41A around the rotation axis Q1A, rotates the second rotating part 41B around the rotation axis Q1B, and rotates the third rotating part 41C around the rotation axis Q1C. Here, the rotation drive unit 46 rotates each rotating part 41 so that the rotation directions of two adjacent rotating parts 41 among the multiple rotating parts 41 are opposite to each other. In other words, the rotation drive unit 46 rotates the first rotating part 41A and the second rotating part 41B so that the rotation directions of the first rotating part 41A and the second rotating part 41B are opposite to each other, and rotates the third rotating part 41C so that the rotation directions of the second rotating part 41B and the third rotating part 41C are opposite to each other. The rotation drive unit 46 rotates the multiple rotating parts 41 synchronously, for example. In other words, the rotation drive unit 46 rotates the multiple rotating units 41 so that the rotation speeds of the multiple rotating units 41 are equal to each other. The rotation drive unit 46 may include, for example, a drive source such as a motor, and a power transmission unit such as a belt and gears. Note that the rotation drive unit 46 may include multiple motors that rotate the multiple rotating units 41, respectively.

[0059] The magnetic field formed above the target 31 by the rotating part 41 changes over time as the rotary drive part 46 rotates the rotating part 41. The X component of the magnetic flux density (hereinafter referred to as magnetic flux component Bx) and the Y component of the magnetic flux density (hereinafter referred to as magnetic flux component By) are expressed by the following equations.

[0060]

number

[0061] Here, a is half the length of magnet 42 along the X direction, b is half the length of magnet 42 along the Y direction, and I is given by Mx / (4π), where Mx is the magnetization in the X direction.

[0062] FIG. 3 is a diagram showing an example of the magnetic flux component Bx when the first rotating part 41A is located at the first rotation position. In FIG. 3, the magnetic flux component Bx at a position flush with the first main surface 31a of the target 31 is shown. In addition, FIG. 3 shows an example of the magnet part 40 located at the first rotation position. As shown in FIG. 3, in the first rotation position, in the first rotating part 41A, the magnet 42 having the magnetic pole surface 42a on the radial outside is located directly above the rotation axis Q1A. Therefore, in the second rotating part 41B, the magnet 42 having the magnetic pole surface 42b on the radial outside is located directly above the rotation axis Q1B, and in the third rotating part 41C, the magnet 42 having the magnetic pole surface 42a on the radial outside is located directly above the rotation axis Q1C.

[0063] FIG. 4 is a diagram showing an example of the magnetic flux component Bx when the second rotating part 41B is located at the second rotation position. FIG. 4 also shows the magnetic flux component Bx at a position flush with the first main surface 31a of the target 31. FIG. 4 also shows an example of the magnet part 40 located at the second rotation position. The second rotation position is a rotation position where the first rotating part 41A is rotated 45 degrees clockwise from the first rotation position. Therefore, the second rotating part 41B is located at a rotation position rotated 45 degrees counterclockwise from the state of FIG. 3, and the third rotating part 41C is located at a rotation position rotated 45 degrees clockwise from the state of FIG. 3.

[0064] As can be understood from a comparison of FIG. 3 and FIG. 4, the magnetic flux component Bx in the plane flush with the first main surface 31a of the target 31 changes according to the rotational position of the magnet unit 40. FIG. 5 is a diagram that shows an example of the magnetic flux component Bx at each rotational position. FIG. 5 also shows the magnetic flux component Bx in the plane flush with the first main surface 31a of the target 31. In FIG. 5, the vertical axis shows the rotational position of the first rotating unit 41A, and the horizontal axis shows the position in the X direction. In FIG. 5, the magnetic flux component Bx is shown by contour lines L1 to L10. Contour line L1 shows the highest value, and contour line L10 shows the lowest value.

[0065] FIG. 6 is a graph showing an example of the time integral value of the magnetic flux component Bx. FIG. 6 shows the integral value of the magnetic flux component Bx in a period required for one rotation of the rotating part 41. That is, the integral value of the magnetic flux component Bx in FIG. 6 is a value obtained by integrating the magnetic flux component Bx in FIG. 5 with the vertical axis as a variable. In the example of FIG. 6, the integral value of the magnetic flux component Bx has a large value in a mountain-shaped section R2 immediately above the first rotating part 41A and the third rotating part 41C, and is constant in a fixed section R1 immediately above the second rotating part 41B. That is, in the example of FIG. 6, the spatial distribution of the integral value of the magnetic flux component Bx has a fixed section R1 that is a constant value regardless of the position in the X direction, and a mountain-shaped section R2 that has an upward convex shape larger than the fixed value on both sides of the fixed section R1. The amount of variation in the integral value of the magnetic flux component Bx in the constant section R1 is smaller than the amount of variation in the magnetic flux component Bx in the mountain-shaped section R2, and may be, for example, one-fifth or less, one-tenth or less, or one-twentieth or less. The amount of variation in the magnetic flux component Bx in the constant section R1 is, for example, the difference between the maximum and minimum values ​​of the integral value in the constant section R1. The amount of variation in the magnetic flux component Bx in the mountain-shaped section R2 is, for example, the difference between the maximum value of the integral value in the mountain-shaped section R2 and the integral value at the boundary between the mountain-shaped section R2 and the constant section R1.

[0066] The first main surface 31a of the target 31 is provided within the fixed section R1. Therefore, the integral value of the magnetic flux component Bx above the first main surface 31a of the target 31 can be made constant regardless of the position in the X direction. In other words, the size and position of the virtual circle of each rotating part 41 and the size, number and position of the magnets 42 are set so that the integral value of the magnetic flux component Bx above the first main surface 31a of the target 31 is constant. Specifically, by making the size of the virtual circle of the rotating part 41 located at the end larger than the size of the virtual circle of the rotating part 41 in the center, it is possible to compensate for the decrease in the integral value of the magnetic flux component Bx near both ends in the X direction of the fixed section R1, and the constancy of the integral value in the fixed section R1 is ensured. In other words, the fixed section R1 can be made wider in the X direction.

[0067] In the above example, the top point P1 of the virtual circle of the first rotating part 41A and the top point P1 of the virtual circle of the third rotating part 41C are located closer to the target 31 in the Z direction than the top point P1 of the virtual circle of the second rotating part 41B. This makes it possible to increase the maximum value of the integral value in the mountain-shaped section R2 located directly above the first rotating part 41A and the third rotating part 41C. This also makes it possible to compensate for the decrease in the integral value near both ends of the fixed section R1, and ensure the constancy of the integral value in the fixed section R1. In other words, the fixed section R1 can be made wider in the X direction.

[0068] As described above, the magnet section 40 forms a magnetic field on the first main surface 31a of the target 31 that changes with the rotation of the magnet section 40. Specifically, in a plan view, the magnet section 40 moves the region with a large magnetic flux component Bx over time above the first main surface 31a of the target 31 (see Figs. 3 to 5). Since high-density plasma is generated in the region, sputtering is mainly performed on the first main surface 31a of the target 31 in the region. In the above example, the region moves over the entire surface of the first main surface 31a of the target 31, so sputtering can be performed on the entire first main surface 31a of the target 31. This can improve the usage efficiency of the target 31. In addition, when a reactive gas containing at least one of a nitrogen element and an oxygen element is used, the first main surface 31a of the target 31 may be nitrided or oxidized to form an insulating film, but the insulating film can be removed from the entire surface of the first main surface 31a by sputtering. This can also suppress the occurrence of abnormal discharge caused by the insulating film.

[0069] In the above example, the magnets 42 are provided in each rotating part 41 with magnetic pole faces of alternately different polarities facing radially outward, and the rotation drive part 46 rotates the rotating part 41 so that the rotation directions of adjacent rotating parts 41 are opposite to each other. FIG. 7 is a diagram showing an example of a state in which the first rotating part 41A and the second rotating part 41B are rotating. In FIG. 7, the first rotating part 41A and the second rotating part 41B are rotating in opposite directions to each other. In this case, as shown in FIG. 7, the flow of magnetic flux between the adjacent rotating parts 41 via the magnetic space on the first main surface 31a side of the target 31 is maintained regardless of the rotation position. In other words, the magnetic circuit between the rotating parts 41 via the magnetic space on the first main surface 31a side of the target 31 can be maintained.

[0070] FIG. 8 is a diagram that shows an example of a state in which the first rotating part 41A and the second rotating part 41B according to the comparative example are rotating. In FIG. 8, the first rotating part 41A and the second rotating part 41B are rotating in the same direction. In this case, initially, the magnetic flux flows from one of the first rotating part 41A and the second rotating part 41B to the other via the first main surface 31a side of the target 31. However, when the rotating part 41 rotates 45 degrees, as shown in the lower part of FIG. 8, the magnetic flux extending from the first rotating part 41A to the first main surface 31a of the target 31 does not flow toward the second rotating part 41B, and the magnetic flux extending from the second rotating part 41B to the first main surface 31a of the target 31 does not flow toward the first rotating part 41A. In other words, the magnetic circuit between the rotating parts 41 that passes through the magnetic space on the first main surface 31a side of the target 31 is interrupted. Therefore, at this rotational position, the magnetic flux component Bx is small, and the ability of the magnetic field to enclose electrons is reduced.

[0071] In contrast, in the above example, it is possible to maintain a magnetic circuit between the rotating parts 41 via the magnetic space on the first main surface 31a side of the target 31. Therefore, it is possible to maintain the ability of the magnetic field to enclose electrons, and the sputtering apparatus 1 can appropriately perform sputtering on the first main surface 31a of the target 31.

[0072] 6, in the above example, the magnet section 40 forms a magnetic field so that the integral value of the magnetic flux component Bx above the first main surface 31a of the target 31 is constant. This allows the sputtering apparatus 1 to perform sputtering on the first main surface 31a of the target 31 more uniformly.

[0073] In the above example, the magnet 42 of the rotating part 41 protrudes radially outward beyond the magnet holding part 43 (see FIG. 1). Therefore, as the rotating part 41 rotates, the protruding part of the magnet 42 pushes out the surrounding gas (e.g., air). This generates an airflow in the radially outward direction around the rotating part 41. This airflow can air-cool the floor of the chamber 10. Therefore, the rotating part 41 can air-cool the cathode 30 through the floor of the chamber 10. The sputtering apparatus 1 may further include a cooling part provided inside the chamber 10 to cool the cathode 30. Even in this case, a cooling part with a smaller cooling capacity by the amount of air cooling by the rotating part 41 can be used, and the manufacturing cost and power consumption of the sputtering apparatus 1 can be reduced.

[0074] <Plasma generator> Incidentally, in the magnetic field above the first main surface 31a of the target 31, electrons may move along the Y direction. This movement of electrons can cause many collisions between the electrons in the magnetic field and the molecules of the sputtering gas, and can ionize the sputtering gas. This can generate plasma with a high electron density. However, in a plan view, the magnetic field space extends linearly along the Y direction and has both ends in the Y direction. In the example of FIG. 2, electrons may collide with each of the side walls on the +Y side and the -Y side of the chamber 10. In other words, since the magnetic field space is not formed in a ring shape in a plan view, electrons cannot circulate in the magnetic field space. This can lead to a decrease in the number of electrons in the magnetic field space.

[0075] Therefore, in the example of Fig. 1, a plasma generator 70 is provided to further increase the electron density of the plasma in the magnetic field. The plasma generator 70 generates plasma inside the chamber 10 (specifically, inside the chimney 80) and supplies ions and electrons in the plasma to the magnetic field above the target 31. Specifically, the plasma generator 70 (specifically, an inductively coupled antenna 71 described later) is provided on both sides in the axial direction between the multiple rotating parts 41 in a plan view, turns the sputtering gas into plasma, and supplies electrons to the magnetic field. As shown in Fig. 2, the plasma generator 70 is provided to avoid an area overlapping with the target 31 in a plan view.

[0076] In the example of FIG. 2, the plasma generator 70 includes a plurality of inductively coupled antennas 71. The inductively coupled antennas 71 include a U-shaped conductive member having electrical conductivity. In the example of FIG. 2, both ends of the conductive member penetrate the side wall of the chamber 10 and protrude outward from the chamber 10. The inductively coupled antennas 71 are provided to avoid an area overlapping with the target 31 in a plan view. In other words, the inductively coupled antennas 71 do not overlap with the target 31 in a plan view. The inductively coupled antennas 71 are provided between the target 31 and the base material 9 in the Z direction. More specifically, the inductively coupled antennas 71 are provided between the target 31 and the eaves portion 81 of the chimney 80 in the Z direction. In the example of FIG. 1, the inductively coupled antennas 71 are provided with both ends aligned horizontally.

[0077] 2, four inductive coupling antennas 71A, 71B, 71C, and 71D are shown as the multiple inductive coupling antennas 71. Inductive coupling antenna 71A is provided between the +Y side end of first rotating part 41A and the +Y side end of second rotating part 41B in a plan view, inductive coupling antenna 71B is provided between the +Y side end of second rotating part 41B and the +Y side end of third rotating part 41C in a plan view, inductive coupling antenna 71C is provided between the -Y side end of first rotating part 41A and the -Y side end of second rotating part 41B in a plan view, and inductive coupling antenna 71D is provided between the -Y side end of second rotating part 41B and the -Y side end of third rotating part 41C in a plan view. Therefore, inductive coupling antenna 71A and inductive coupling antenna 71C are adjacent in the X direction to the Y-direction end of the magnetic field formed by the first rotating part 41A and the second rotating part 41B, and inductive coupling antenna 71C and inductive coupling antenna 71D are adjacent in the X direction to the Y-direction end of the magnetic field formed by the second rotating part 41B and the third rotating part 41C.

[0078] A second power supply unit 72 is connected to both ends of each inductive coupling antenna 71. The second power supply unit 72 supplies high frequency power to both ends of the inductive coupling antenna 71. The second power supply unit 72 includes, for example, a switching power supply circuit and an impedance matching circuit, not shown. The switching power supply circuit supplies high frequency power to each inductive coupling antenna 71 through the impedance matching circuit. The output of the second power supply unit 72 is controlled by the control unit 90.

[0079] When high-frequency power is supplied to the inductively coupled antenna 71, an induced magnetic field is generated around the inductively coupled antenna 71. This induced magnetic field can convert the sputtering gas into plasma. The inductively coupled antenna 71 can generate plasma with a high electron density. In this way, plasma is generated in the induced magnetic field near the magnetic field generated by the magnet unit 40, so that ions and electrons are supplied to the magnetic field generated by the magnet unit 40. That is, electrons can be replenished in the magnetic field. Then, some of the electrons move in the magnetic field along the Y direction, and further plasma can be generated by collision between the electrons and molecules. Therefore, the sputtering device 1 can perform sputtering on the first main surface 31a of the target 31 with a higher plasma density.

[0080] As described above, the sputtering apparatus 1 has been described in detail, but the above description is merely an example in all respects, and the sputtering apparatus 1 is not limited thereto. It is understood that countless modified examples not exemplified can be imagined without departing from the scope of this disclosure. The configurations described in the above embodiments and modified examples can be appropriately combined or omitted as long as they are not mutually contradictory.

[0081] For example, the magnet unit 40 may include four or more rotating units 41. In this case, the diameter of the imaginary circle of the rotating units 41 located at both ends may be set to be larger than the diameter of the imaginary circle of the rotating unit 41 located between the two ends. The diameters of the imaginary circles of the multiple rotating units 41 located between the two ends may be set to be equal to each other.

[0082] In the above example, the type of the plasma generator 70 is an inductively coupled plasma type, but it may be any of, for example, a capacitively coupled plasma type, a microwave plasma type, an electron cyclotron resonance plasma (ECR) type, a helicon wave excited plasma (HWP) type, and a microwave excited surface wave plasma (SWP) type. [Explanation of symbols]

[0083] 1. Sputtering equipment 30 Cathode 31 Target 31a 1st main surface 31b 2nd principal surface 32 Rotation drive unit 40 Magnet section 41 Rotating section 41A First Rotating Part 41B Second Rotating Section 42 Magnet 43 Magnet holder 43a Outer surface 50 Sputtering gas supply unit 60 Power supply section (second power supply section) 70 Plasma Generator 71 Inductively Coupled Antenna 9. Substrate P1 Top point Q1, Q1A~Q1D Rotation axis

Claims

1. a cathode including a plate-shaped target having a first main surface facing an object to be film-formed and a second main surface opposite to the first main surface; a sputtering gas supply unit for supplying a sputtering gas between the target and the film-forming object; A power supply unit that applies a sputtering voltage to the cathode; a magnet section provided on the second main surface side of the target and configured to form a magnetic field on the first main surface side of the target; Equipped with The magnet portion is A plurality of rotating parts arranged along an arrangement direction along the first main surface of the target; Rotation drive unit and Including, Each of the plurality of rotating parts includes a plurality of magnets arranged along a circumferential direction about a respective rotation axis along an axial direction intersecting the arrangement direction, the magnets forming the magnetic field, A sputtering apparatus, wherein the rotation drive unit rotates the multiple rotating units about their respective rotation axes to change the magnetic field.

2. 2. The sputtering apparatus according to claim 1, The plurality of magnets are arranged such that magnetic pole faces of alternately different polarities in the circumferential direction face radially outward with respect to the rotation axis, A sputtering apparatus, wherein the rotation drive unit rotates two adjacent ones of the plurality of rotating units in opposite directions to each other.

3. 3. The sputtering apparatus according to claim 1, the plurality of rotating parts is three or more rotating parts, In each of the plurality of rotating parts, the plurality of magnets are arranged on a respective imaginary circle, A sputtering apparatus, wherein a diameter of the imaginary circle of a first rotating part located at an end among the three or more rotating parts is larger than a diameter of the imaginary circle of a second rotating part located other than the end among the three or more rotating parts.

4. 3. The sputtering apparatus according to claim 1, the plurality of rotating parts is three or more rotating parts, In each of the plurality of rotating parts, the plurality of magnets are arranged on an imaginary circle, A sputtering apparatus, wherein the uppermost point of the virtual circle of a first rotating part located at an end among the three or more rotating parts, which is closest to the target in the thickness direction of the target, is closer to the target than the uppermost point of the virtual circle of a second rotating part located other than the end among the three or more rotating parts.

5. 4. The sputtering apparatus according to claim 3, the first rotating portion is provided at a position not facing the target in a thickness direction of the target, A sputtering apparatus, wherein the second rotating portion is provided at a position facing the target in a thickness direction of the target.

6. 3. The sputtering apparatus according to claim 1, The sputtering apparatus further comprises a plasma generator provided on both sides in the axial direction between the plurality of rotating parts in a plan view, the plasma generator converting the sputtering gas into plasma and supplying electrons to the magnetic field.

7. 7. The sputtering apparatus according to claim 6, The plasma generator includes an inductively coupled antenna.

8. 3. The sputtering apparatus according to claim 1, At least one of the plurality of rotating parts is a magnet holder for holding the plurality of magnets; A sputtering apparatus, wherein the plurality of magnets protrude outward beyond an outer circumferential surface of the magnet holding portion.

Images