Organic compound, light-emitting device, light-emitting apparatus, and electronic appliance

Abstract

To provide an organic compound with an electron-transport property and low water solubility.SOLUTION: An organic compound represented by general formula (G1-1) below is provided. At least any one of R2 to R9 is a group represented by general formula (R-1) or (R-2).SELECTED DRAWING: None

Description

[Technical field]

[0001] An embodiment of the present invention relates to an organic compound, a light-emitting device, a light-emitting apparatus, a light-receiving / light-emitting apparatus, a display device, an electronic device, a lighting apparatus, and an electronic device. Note that an embodiment of the present invention is not limited to the above technical field. The technical field of an embodiment of the present invention disclosed in the present specification and the like relates to an object, a method, or a manufacturing method. Alternatively, an embodiment of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of an embodiment of the present invention disclosed in the present specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a storage device, an imaging device, a driving method thereof, or a manufacturing method thereof. [Background technology]

[0002] In recent years, display devices are expected to be used in various applications. For example, applications of large display devices include home television devices (also called televisions or television receivers), digital signage, and public information displays (PIDs). In addition, development of smartphones and tablet terminals equipped with touch panels as mobile information terminals is underway.

[0003] There is also a demand for higher definition display devices. Devices requiring high definition display devices, such as devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0004] As a display device, for example, a light-emitting device having a light-emitting device (also called a light-emitting element) has been developed. A light-emitting device (also called an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a DC constant voltage power supply, and is applied to a display device.

[0005] Patent Document 1 discloses a display device for VR using an organic EL device (also called an organic EL element). Patent Document 2 discloses a light-emitting device that uses a mixed film of a transition metal and an organic compound having an unshared electron pair as an electron injection layer, and has low driving voltage and good reliability. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] International Publication No. 2018 / 087625 [Patent Document 2] JP 2018-201012 A Summary of the Invention [Problem to be solved by the invention]

[0007] As one of the methods for fabricating an organic compound layer into a predetermined shape, a vacuum deposition method using a metal mask (mask deposition) is widely used. However, in recent years, as densification and definition have progressed, mask deposition is approaching its limit for further finer definition due to various reasons such as problems with alignment accuracy and problems with the placement distance to the substrate. On the other hand, by processing the shape of the organic compound layer using a lithography method, it is possible to form a more precise pattern. This method can also be easily made into a large area, and research into processing organic compound layers using lithography is also being conducted.

[0008] When processing an organic compound layer using a lithography method, if the organic compound used in the organic compound layer has high solubility in water, the organic compound layer may dissolve in the process of being exposed to water or a chemical solution that uses water as a solvent, which may cause a decrease in characteristics, a defective shape, etc. In addition, the glass transition temperature (T g ) is low, the organic compound layer may crystallize in a heating step for removing water adsorbed in the organic compound layer after the step of exposing the organic compound layer to water or a chemical solution containing water as a solvent, resulting in a deterioration in film quality.

[0009] An object of one embodiment of the present invention is to provide an organic compound having an electron-transporting property. Another object of one embodiment of the present invention is to provide an organic compound having low solubility in water. g Another object of one embodiment of the present invention is to provide an organic compound having high light-emitting properties. Another object of one embodiment of the present invention is to provide a light-emitting device having favorable characteristics. Another object of one embodiment of the present invention is to provide a novel organic compound or a novel light-emitting device.

[0010] Another object of one embodiment of the present invention is to provide a light-emitting device with high display quality. Another object of one embodiment of the present invention is to provide a high-definition light-emitting device. Another object of one embodiment of the present invention is to provide a high-resolution light-emitting device. Another object of one embodiment of the present invention is to provide a light-emitting device with a high aperture ratio. Another object of one embodiment of the present invention is to provide a highly reliable light-emitting device. Another object of one embodiment of the present invention is to provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Another object of one embodiment of the present invention is to provide a novel electronic device with excellent convenience, usefulness, or reliability. Another object of one embodiment of the present invention is to provide a novel lighting device with excellent convenience, usefulness, or reliability. Alternatively, another object of one embodiment of the present invention is to provide a novel light-emitting device, a novel electronic device, or a novel lighting device.

[0011] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract problems other than these from the description of the specification, drawings, claims, etc. [Means for solving the problem]

[0012] One embodiment of the present invention is an organic compound represented by general formula (G1-1).

[0013] [ka]

[0014] In general formula (G1-1), R 2 ~R 9 At least one of the groups is a group represented by general formula (R-1) or (R-2), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R 11 ~R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and each of p and q independently represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 2 ~R 9When two or more of the above are groups represented by formula (R-1) or (R-2), they may be the same or different.

[0015] In the organic compound having the above structure, R 4 and R 7 It is more preferable that either one or both of the above be a group represented by general formula (R-1) or (R-2).

[0016] Another embodiment of the present invention is an organic compound represented by general formula (G1-2).

[0017] [ka]

[0018] In general formula (G1-2), R 2 ~R 9 At least one of the groups is a group represented by any one of general formulas (R-1) to (R-4), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R 11 ~R 46 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring;27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by any one of general formulae (R-1) to (R-4), they may be the same or different.

[0019] In the organic compound having the above structure, R 4 and R 7 It is more preferable that either one or both of the above be a group represented by any one of general formulae (R-1) to (R-4).

[0020] Another embodiment of the present invention is an organic compound represented by general formula (G1-3).

[0021] [ka]

[0022] In general formula (G1-3), R 2 ~R 9 At least one of the groups is a group represented by any one of general formulas (R-5) to (R-8), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 51 ~R 54 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R11 ~R 46 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by any one of general formulae (R-5) to (R-8), they may be the same or different.

[0023] In the organic compound having the above structure, R 4 and R 7 It is more preferable that either one or both of the above be a group represented by any one of general formulae (R-5) to (R-8).

[0024] Another embodiment of the present invention is an organic compound represented by general formula (G1-4).

[0025] [ka]

[0026] In general formula (G1-4), R 2 ~R 9At least one of the groups is a group represented by any one of general formulas (R-9) to (R-12), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 51 ~R 54 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 46 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by any one of general formulae (R-9) to (R-12), they may be the same or different.

[0027] In the organic compound having the above structure, R 4 and R 7 It is more preferable that either one or both of the above be a group represented by any one of general formulae (R-5) to (R-8).

[0028] Another embodiment of the present invention is an organic compound represented by general formula (G2).

[0029] [ka]

[0030] In general formula (G2), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 ~R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 18 and R 61 ~R 68 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; p, q, r and s each independently represent 0 or 1.

[0031] Another embodiment of the present invention is an organic compound represented by general formula (G3).

[0032] [ka]

[0033] In general formula (G3), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 ~R 58each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 18 and R 61 ~R 68 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; p, q, r and s each independently represent 0 or 1.

[0034] Another embodiment of the present invention is an organic compound represented by general formula (G4).

[0035] [ka]

[0036] In general formula (G4), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 ~R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 18 and R 61 ~R 68 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms.

[0037] Another embodiment of the present invention is an organic compound having any of the above structures, in which the group bonded to the 4-position of the phenanthroline ring is the same as the group bonded to the 7-position.

[0038] Another embodiment of the present invention is an organic compound represented by structural formula (100) or structural formula (152).

[0039] [ka]

[0040] Another embodiment of the present invention is a light-emitting device using any of the organic compounds having any of the above structures.

[0041] Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer, the organic compound layer being located between the first electrode and the second electrode, the organic compound layer having a light-emitting layer and an electron-injection layer, the electron-injection layer being located between the light-emitting layer and the second electrode, and the electron-injection layer having the organic compounds having the above structures.

[0042] Another embodiment of the present invention is a light-emitting device including a first electrode, a second electrode, and an organic compound layer, the organic compound layer being located between the first electrode and the second electrode, the organic compound layer having an intermediate layer, a first light-emitting layer, and a second light-emitting layer, the intermediate layer being located between the first light-emitting layer and the second light-emitting layer, and the intermediate layer having the organic compounds having the above structures.

[0043] Another embodiment of the present invention is a light-emitting device including the light-emitting device having any of the above structures and a transistor or a substrate.

[0044] Another embodiment of the present invention is an electronic device including a light-emitting device having any of the above structures and a detection unit, an input unit, or a communication unit.

[0045] In this specification, the term "light-emitting device" includes a display device or an image display device using a light-emitting device. The light-emitting device may also include a module in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to a light-emitting device on a substrate, a module in which a printed wiring board is provided at the end of the TCP, or a module in which an IC (integrated circuit) is directly mounted on a light-emitting device by a COG (Chip On Glass) method. Furthermore, a lighting fixture or the like may have a light-emitting device. Effect of the Invention

[0046] According to one embodiment of the present invention, an organic compound having an electron-transporting property can be provided. According to another embodiment of the present invention, an organic compound having low solubility in water can be provided. According to another embodiment of the present invention, T g According to one embodiment of the present invention, a light-emitting device having favorable characteristics can be provided. According to one embodiment of the present invention, a novel organic compound or a novel light-emitting device can be provided.

[0047] According to one embodiment of the present invention, a light-emitting device with high display quality can be provided. According to one embodiment of the present invention, a high-definition light-emitting device can be provided. According to one embodiment of the present invention, a high-resolution light-emitting device can be provided. According to one embodiment of the present invention, a light-emitting device with a high aperture ratio can be provided. According to one embodiment of the present invention, a highly reliable light-emitting device can be provided. According to one embodiment of the present invention, a novel light-emitting device with excellent convenience, usefulness, or reliability can be provided. According to one embodiment of the present invention, a novel display module with excellent convenience, usefulness, or reliability can be provided. According to one embodiment of the present invention, a novel electronic device with excellent convenience, usefulness, or reliability can be provided. According to one embodiment of the present invention, a novel light-emitting device, a novel display module, a novel electronic device, or a novel semiconductor device can be provided.

[0048] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims. [Brief description of the drawings]

[0049] [Figure 1] 1(A) and 1(B) are diagrams illustrating a light-emitting device. [Diagram 2] 2A to 2D are diagrams showing a light emitting device. [Diagram 3] 3(A) and 3(B) are a top view and a cross-sectional view of the light emitting device. [Figure 4] 4(A) to 4(D) are diagrams showing a light emitting device. [Diagram 5] 5A to 5E are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 6] 6A to 6D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 7] 7A to 7D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 8] 8A to 8C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 9] 9A to 9C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 10] 10A to 10C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 11] 11A and 11B are perspective views showing a configuration example of a display module. [Figure 12] 12A and 12B are cross-sectional views showing configuration examples of a display device. [Figure 13] 13A to 13D are diagrams illustrating examples of electronic devices. [Figure 14]14A to 14F are diagrams showing examples of electronic devices. [Figure 15] FIG. 15 is the 1H NMR spectrum of PrdP2Phen. [Figure 16] FIG. 16 is a graph showing the luminance-current density characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 17] FIG. 17 is a graph showing the luminance-voltage characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 18] FIG. 18 is a graph showing the current efficiency-current density characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 19] FIG. 19 is a graph showing the current density-voltage characteristics of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 20] FIG. 20 shows the electroluminescence spectra of the light-emitting device 1 and the comparative light-emitting device 2. As shown in FIG. [Figure 21] FIG. 21 is a graph showing the luminance-current density characteristics of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Figure 22] FIG. 22 is a diagram showing the luminance-voltage characteristics of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Figure 23] FIG. 23 is a graph showing the current efficiency-current density characteristics of the light-emitting device 3 and the light-emitting device 4. In FIG. [Figure 24] FIG. 24 is a graph showing the current density-voltage characteristics of the light-emitting device 3 and the light-emitting device 4. As shown in FIG. [Diagram 25] FIG. 25 shows the electroluminescence spectra of light-emitting device 3 and light-emitting device 4. As shown in FIG. [Figure 26] 26(A) to 26(C) are optical microscope photographs of light-emitting device 3, light-emitting device 4, and comparative light-emitting device 5. FIG. [Figure 27] Figure 27 is the 1H NMR spectrum of Hid-PrdPPhen. [Figure 28] FIG. 28 is a graph showing the luminance-current density characteristics of the light-emitting device 6 and the light-emitting device 7. As shown in FIG. [Figure 29] FIG. 29 is a diagram showing the luminance-voltage characteristics of the light-emitting device 6 and the light-emitting device 7. As shown in FIG. [Diagram 30] FIG. 30 is a graph showing the current efficiency-current density characteristics of the light-emitting device 6 and the light-emitting device 7. As shown in FIG. [Diagram 31] FIG. 31 is a graph showing the current density-voltage characteristics of the light-emitting device 6 and the light-emitting device 7. As shown in FIG. [Diagram 32] FIG. 32 shows the electroluminescence spectra of the light-emitting devices 6 and 7. As shown in FIG. [Diagram 33] FIG. 33 is a graph showing the luminance-current density characteristics of the light-emitting device 8 and the comparative light-emitting device 9. As shown in FIG. [Diagram 34] FIG. 34 is a graph showing the luminance-voltage characteristics of the light-emitting device 8 and the comparative light-emitting device 9. As shown in FIG. [Diagram 35] FIG. 35 is a graph showing the current efficiency-current density characteristics of the light-emitting device 8 and the comparative light-emitting device 9. As shown in FIG. [Diagram 36] FIG. 36 is a graph showing the current density-voltage characteristics of the light-emitting device 8 and the comparative light-emitting device 9. As shown in FIG. [Figure 37] FIG. 37 shows the electroluminescence spectra of light-emitting device 8 and comparative light-emitting device 9. As shown in FIG. [Figure 38] 38(A) and 38(B) are optical microscope photographs of light-emitting device 8 and comparative light-emitting device 9. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0050] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be easily understood by those skilled in the art that the modes and details of the present invention can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0051] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and the repeated explanations are omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be used.

[0052] In addition, for ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0053] In addition, the words "film" and "layer" can be interchanged depending on the case or situation. For example, the term "conductive layer" can be changed to the term "conductive film". Or, for example, the term "insulating film" can be changed to the term "insulating layer".

[0054] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-definition metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0055] In this specification and the like, holes or electrons may be referred to as "carriers". Specifically, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer", a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer", and a hole block layer or an electron block layer may be referred to as a "carrier block layer". In addition, one layer may have two or three functions among the carrier injection layer, the carrier transport layer, and the carrier block layer.

[0056] In this specification and the like, a light-emitting device (also referred to as a light-emitting element) has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode, and the other may be referred to as a common electrode.

[0057] In this specification, the term "tapered shape" refers to a shape in which at least a part of the side of the structure is inclined with respect to the substrate surface. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side and the substrate surface is less than 90°. The side of the structure and the substrate surface do not necessarily need to be completely flat, and may be substantially planar with a slight curvature or substantially planar with a slight unevenness.

[0058] In this specification, the term "light-emitting device" includes a display device or an image display device using an organic EL device. The term "light-emitting device" may also include a module in which a connector, such as an anisotropic conductive film or TCP (Tape Carrier Package), is attached to an organic EL device, a module in which a printed wiring board is provided at the end of the TCP, or a module in which an IC (integrated circuit) is directly mounted on an organic EL device by a COG (Chip On Glass) method. Furthermore, lighting fixtures and the like may have a light-emitting device.

[0059] (Embodiment 1) In this embodiment, an organic compound of one embodiment of the present invention will be described.

[0060] An organic compound according to one embodiment of the present invention is represented by general formula (G1-1).

[0061] [ka]

[0062] In general formula (G1-1), R 2 ~R 9At least one of the groups is a group represented by general formula (R-1) or (R-2), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R 11 ~R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and each of p and q independently represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by formula (R-1) or (R-2), they may be the same or different.

[0063] The organic compound represented by the general formula (G1-1) has an electron transporting property because it has a 1,10-phenanthroline ring. In addition, the 1,10-phenanthroline ring can be coordinated to a metal because the nitrogen atoms (N) at the 1st and 10th positions have unshared electron pairs. Therefore, when the organic compound represented by the general formula (G1-1) is mixed with a metal, a coordinate bond is formed by electron donation from the two Ns of the 1,10-phenanthroline ring to the metal, forming a stabilized complex and increasing the electron density of the metal. In addition, when a layer having the organic compound represented by the general formula (G1-1) is laminated with a metal layer such as an electrode, a coordinate bond is formed by electron donation from the two Ns of the 1,10-phenanthroline ring to the metal of the metal layer, increasing the electron density of the metal of the metal layer.

[0064] In addition, the organic compound represented by the general formula (G1-1) has a cyclic alkylamino group having 3 to 5 ring members. The cyclic alkylamino group has high electron donating property, so that the electron density of the 1,10-phenanthroline ring can be increased, and the electron donating property from the two N atoms of the 1,10-phenanthroline ring to the metal can be increased, and a stable coordinate bond can be formed. In addition, by making the number of ring members of the cyclic alkylamino group 5 or less, the electron density of the nitrogen atom of the cyclic alkylamino group is increased compared to the case of making it 6 or more, and the electron donating property can be increased, which is preferable.

[0065] In addition, the acid dissociation constant pKa increases as the electron density of the 1,10-phenanthroline ring increases. When the acid dissociation constant pKa becomes too high, the solubility in water increases, but the organic compound represented by the general formula (G1-1) has a structure in which the 1,10-phenanthroline ring and the cyclic alkylamino group are linked via a substituted or unsubstituted arylene group having 6 to 30 carbon atoms. Therefore, compared with the case in which the 1,10-phenanthroline ring and the cyclic alkylamino group are directly linked, the electron donating ability from the cyclic alkylamino group to the 1,10-phenanthroline ring decreases, so that the electron density of the 1,10-phenanthroline ring can be prevented from becoming too high. Therefore, the acid dissociation constant pKa can be prevented from becoming too high, and the solubility in water can be prevented from becoming too high. In addition, compared to an organic compound having a structure in which a 1,10-phenanthroline ring and a cyclic alkylamino group are directly linked, the organic compound represented by general formula (G1-1) has a large molecular weight, and the volume ratio of the hydrophilic cyclic alkylamino group to the entire molecular structure is small. This also means that it is possible to suppress an increase in solubility in water. In addition, the inclusion of a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, which is a hydrophobic group, increases the molecular weight, and therefore, T g The organic compound having a higher molecular weight is preferred.

[0066] The organic compound according to one embodiment of the present invention has a low solubility in water, and therefore, when used in an organic compound layer of a light-emitting device that is manufactured in a process that includes treatment using water or a chemical solution that uses water as a solvent (i.e., a light-emitting device that is processed using a lithography method), dissolution of the organic compound layer can be suppressed. g Since the organic compound layer has a higher molecular weight, the organic compound layer can be prevented from crystallizing in a heating step for removing water adsorbed in the organic compound layer after the step of exposing the organic compound layer to water or a chemical solution containing water as a solvent. Therefore, by using the organic compound of one embodiment of the present invention, a light-emitting device with good characteristics in which light emission defects are suppressed can be manufactured.

[0067] In this specification and the like, hydrogen includes protium and deuterium. Deuterium refers to a stable isotope of hydrogen with a mass number of 2. Protium refers to a stable isotope of hydrogen with a mass number of 1. The bond dissociation energy of a bond between carbon and deuterium is greater than the bond dissociation energy of a bond between carbon and protium, and is stable and difficult to break. Therefore, when the organic compound of one embodiment of the present invention contains deuterium, dissociation of the carbon-hydrogen bond is suppressed, making it a stable compound.

[0068] Further, an organic compound according to one embodiment of the present invention is an organic compound represented by general formula (G1-2).

[0069] [ka]

[0070] In general formula (G1-2), R 2 ~R 9 At least one of the groups is a group represented by any one of general formulas (R-1) to (R-4), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R 11 ~R 46 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R26 Any two of R may be bonded to each other to form a ring; 27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by any one of general formulae (R-1) to (R-4), they may be the same or different.

[0071] In the general formula (G1-2), in the general formula (R-1) in the above-mentioned general formula (G1-1), R 11 ~R 18 As examples of the case where any two of the above are bonded to each other to form a ring, the general formulas (R-3) and (R-4) are shown. By forming a ring in this way, the solubility in water is lower than that of a monocyclic cyclic alkylamino group, and T g The organic compound having a higher molecular weight can be used, which is preferable.

[0072] Further, an organic compound of one embodiment of the present invention is an organic compound represented by general formula (G1-3).

[0073] [ka]

[0074] In general formula (G1-3), R 2 ~R 9 At least one of the groups is a group represented by any one of general formulas (R-5) to (R-8), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 51 ~R 54each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 46 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by any one of general formulae (R-5) to (R-8), they may be the same or different.

[0075] The organic compound represented by the general formula (G1-3) is α 1 The difference from the organic compound represented by the general formula (G1-2) is that α is limited to a phenylene group. 1 By making α a phenylene group, 1Since the extent of the extension of the effective conjugation length due to the cyclic alkylamino group can be suppressed, the absorption of light in the visible light region can be suppressed. In addition, the substitution position of the phenylene group is preferably the para position, since the electron donating property from the cyclic alkylamino group to the nitrogen of the phenanthroline ring can be enhanced. Therefore, the use of an organic compound represented by the general formula (G1-3) can improve the luminous efficiency of a light-emitting device. In addition, when the substitution position of the phenylene group is the meta position, it is considered that the heat resistance is lower than when it is the para position. In addition, since the electron donating property of the cyclic alkylamino group is lower at the meta position than at the ortho position or the para position, it is preferable that the substitution position of the phenylene group is the para position. In addition, when the substitution position of the phenylene group is the ortho position, it is considered that the cyclic alkylamino group covers the periphery of the 1,10-phenanthroline ring, and it is possible that the coordinate bond between the nitrogen of the 1,10-phenanthroline ring and the metal is hindered. Such steric concerns are resolved by the substitution position of the phenylene group, which is preferable.

[0076] Further, an organic compound according to one embodiment of the present invention is an organic compound represented by general formula (G1-4).

[0077] [ka]

[0078] In general formula (G1-4), R 2 ~R 9 At least one of the groups is a group represented by any one of general formulas (R-9) to (R-12), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 51 ~R 54each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 46 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the above are groups represented by any one of general formulae (R-9) to (R-12), they may be the same or different.

[0079] The organic compound represented by the general formula (G1-4) is different from the organic compound represented by the general formula (G1-3) in that the substitution position of the phenylene group linking the 1,10-phenanthroline ring and the cyclic alkylamino group is limited to the para position. By using the p-phenylene group in this way, the p-phenylene group is not twisted with respect to the 1,10-phenanthroline ring, and is arranged on the same plane. Therefore, the effect of increasing the electron density of the 1,10-phenanthroline ring by the cyclic alkylamino group is not easily reduced, which is preferable.

[0080] In the organic compound represented by the general formula (G1-1), R 4 and R 7 is preferably a group represented by general formula (R-1) or (R-2), 4 and R7 It is more preferable that both of R are groups represented by general formula (R-1) or (R-2). 4 and R 7 is preferably a group represented by any one of general formulas (R-1) to (R-4), 4 and R 7 It is more preferable that both of R are groups represented by any one of the general formulae (R-1) to (R-4). 4 and R 7 is preferably a group represented by any one of general formulas (R-5) to (R-8), 4 and R 7 It is more preferable that both of R are groups represented by any one of general formulas (R-5) to (R-8). 4 and R 7 is preferably a group represented by any one of general formulas (R-9) to (R-12), 4 and R 7 is more preferably a group represented by any one of general formulae (R-9) to (R-12). In this way, by introducing an electron-donating group into the 4-position and the 7-position of the 1,10-phenanthroline ring, the electron density of the 1-position and the 10-position nitrogen atoms, which are in the para-position, can be increased. In addition, the electron density around the 1-position and the 10-position nitrogen atoms can be increased while avoiding steric congestion around them. Therefore, the efficiency of the interaction between the organic compound represented by general formulae (G1-1) to (G1-4) and the metal can be increased.

[0081] Another embodiment of the present invention is an organic compound represented by general formula (G2).

[0082] [ka]

[0083] In general formula (G2), R 2, R 3 , R 5 , R 6 , R 8 , R 9 and R 51 ~R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 18 and R 61 ~R 68 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; p, q, r and s each independently represent 0 or 1.

[0084] The organic compound represented by the general formula (G2) is R 4 and R 7 The formula differs from the formula (G1-3) in that both are limited to groups represented by the formula (R-5). 4 and R 7 are groups represented by general formula (R-5), the electron density of the nitrogen atoms at positions 1 and 10 of the phenanthroline ring can be increased. Also, the electron density around the nitrogen atoms at positions 1 and 10 can be increased while avoiding steric congestion around the nitrogen atoms. Therefore, the efficiency of the interaction between the organic compound represented by general formula (G2) and a metal can be increased.

[0085] Another embodiment of the present invention is an organic compound represented by general formula (G3).

[0086] [ka]

[0087] In general formula (G3), R 2 , R 3 , R 5 , R 6 , R8 , R 9 and R 51 ~R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 18 and R 61 ~R 68 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; p, q, r and s each independently represent 0 or 1.

[0088] The organic compound represented by the general formula (G3) is different from the organic compound represented by the general formula (G2) in that the substitution position of the phenylene group linking the 1,10-phenanthroline ring and the cyclic alkylamino group is limited to the para position. By using the p-phenylene group in this way, the p-phenylene group is not twisted relative to the 1,10-phenanthroline ring, and is arranged on the same plane. Therefore, the effect of increasing the electron density of the 1,10-phenanthroline ring by the cyclic alkylamino group is not easily reduced, which is preferable.

[0089] Another embodiment of the present invention is an organic compound represented by general formula (G4).

[0090] [ka]

[0091] In general formula (G4), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 ~R 58each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R 11 ~R 18 and R 61 ~R 68 each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms.

[0092] The organic compound represented by general formula (G4) differs from the organic compound represented by general formula (G3) in that the number of ring members in the cyclic alkylamino group is limited to 5. Cyclic alkylamino groups having 5 ring members are preferred because they are more stable than those having 4 or less ring members and have a greater effect of increasing the electron density of the 1,10-phenanthroline ring than those having 6 or more ring members.

[0093] Next, specific examples of the alkyl group having 1 to 10 carbon atoms, the cycloalkyl group having 3 to 10 carbon atoms, the alkoxy group having 1 to 10 carbon atoms, the substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, the aryl group having 6 to 30 carbon atoms, the heteroaryl group having 1 to 30 carbon atoms, and the arylene group having 6 to 30 carbon atoms that can be applied to the above general formulae (G1-1) to (G1-4) and (G2) to (G4) will be described. Note that in the specific examples described below, some or all of the hydrogen atoms may be deuterium. In addition, the groups that can be applied to the above general formulae are not limited to the specific examples described below.

[0094] Specific Examples of Alkyl Groups Having 1 to 10 Carbon Atoms Specific examples of the alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a sec-pentyl group, a tert-pentyl group, a neopentyl group, a hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, a neohexyl group, a 3-methylpentyl group, a 2-methylpentyl group, a 2-ethylbutyl group, a 1,2-dimethylbutyl group, a 2,3-dimethylbutyl group, a 1-ethylhexyl group, etc. In particular, when a cyclic alkylamino group has an alkyl group having 1 to 10 carbon atoms, the application of a branched alkyl group such as a tert-butyl group reduces the surface area of ​​the hydrophilic alkylamino group compared to the application of a linear alkyl group having the same molecular weight, and therefore the solubility of the organic compound in water can be further reduced.

[0095] Specific Examples of Cycloalkyl Groups Having 3 to 10 Carbon Atoms Specific examples of cycloalkyl groups having 3 to 10 carbon atoms include a cyclopropyl group, a cyclobutyl group, a methylcyclobutyl group, a cyclopentyl group, a methylcyclopentyl group, an isopropylcyclopentyl group, a tert-butylcyclopropyl group, a cyclohexyl group, a methylcyclohexyl group, a tert-butylcyclohexyl group, a cycloheptyl group, a methylcycloheptyl group, an isopropylcycloheptyl group, a cyclooctyl group, a methylcyclooctyl group, an isopropylcyclohexyl group, a cyclononyl group, a methylcyclononyl group, a cyclodecyl group, and an adamantyl group.

[0096] <Alkoxy group having 1 to 10 carbon atoms> Specific examples of the alkoxy group having 1 to 10 carbon atoms include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, a sec-butoxy group, an isobutoxy group, a tert-butoxy group, an n-pentyloxy group, an isopentyloxy group, a sec-pentyloxy group, a tert-pentyloxy group, a neopentyloxy group, an n-hexyloxy group, an isohexyloxy group, a sec-hexyloxy group, a tert-hexyloxy group, a neohexyloxy group, and a cyclohexyloxy group.

[0097] <Cyclic secondary amino group having 2 to 10 carbon atoms> In this specification and the like, a cyclic secondary amino group having 2 to 10 carbon atoms refers to a monovalent group obtained by removing hydrogen from the nitrogen atom of a cyclic secondary amine having 2 to 10 carbon atoms. Specific examples of the cyclic secondary amino group having 2 to 10 carbon atoms include a pyrrolidin-1-yl group, an isoindole-2-yl group, a dihydroisoindol-2-yl group, a tetrahydroisoindol-2-yl group, a hexahydroisoindol-2-yl group, an octahydro-1H-isoindol-2-yl group, a hexahydroisoindolin-2-yl group, a piperidin-1-yl group, an aziridin-1-yl group, an azetidin-1-yl group, an octahydrocyclopenta[c]pyrrol-2-yl group, an octahydro-4,7-methyl-2-phenyl-1H-isoindol ... Examples of the aryl group include azabicyclo[3.1.0]hexan-2-yl group, azabicyclo[3.1.0]hexan-2-yl group, azabicyclo[3.2.0]heptan-2-yl group, azaspiro[3.4]octan-5-yl group, azabicyclo[3.2.1]octan-8-yl group, azaspiro[2.2.1]heptan-7-yl group, azaspiro[2.4]heptan-5-yl group, and azabicyclo[2.1.1]hexan-5-yl group. When the cyclic secondary amino group having 2 to 10 carbon atoms has a substituent, specific examples of the substituent include an alkyl group having 1 to 10 carbon atoms.

[0098] Specific examples of the substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms include groups represented by the following general formulas (N-1) to (N-4). The groups represented by the following general formulas (N-1) to (N-4) are more preferred because they have high electron donating properties.

[0099] [ka]

[0100] In the general formulae (N-1) to (N-4), R 11 ~R 46each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 19 ~R 26 Any two of R may be bonded to each other to form a ring; 27 ~R 36 Any two of R may be bonded to each other to form a ring; 37 ~R 46 Any two of these may be bonded to each other to form a ring.

[0101] <Aryl group having 6 to 30 carbon atoms> Specific examples of the aryl group having 6 to 30 carbon atoms include a phenyl group, an o-tolyl group, an m-tolyl group, a p-tolyl group, a mesityl group, an o-biphenyl group, an m-biphenyl group, a p-biphenyl group, a 1-naphthyl group, a 2-naphthyl group, a fluorenyl group, a 9,9-dimethylfluorenyl group, a spirobifluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, etc. When the aryl group having 6 to 30 carbon atoms has a substituent, the substituent may be an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a phenyl group, etc.

[0102] <Arylene group having 6 to 30 carbon atoms> Specific examples of the arylene group having 6 to 30 carbon atoms include a phenylene group, a biphenyl-diyl group, a naphthalene-diyl group, a fluorenine-diyl group, an acenaphthene-diyl group, an anthracene-diyl group, a terphenyl-diyl group, a triphenylene-diyl group, a phenanthrene-diyl group, a tetracenyl group, a benzanthracene-diyl group, a pyrene-diyl group, a spirobi[9H-fluorene]-diyl group, etc. When the arylene group having 6 to 30 carbon atoms has a substituent, the substituent can be an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a phenyl group, etc.

[0103] <Heteroaryl group having 1 to 30 carbon atoms> In this specification and the like, a heteroaryl group having 1 to 30 carbon atoms refers to a monovalent group obtained by removing a hydrogen atom from a carbon atom forming a ring of a monocyclic or polycyclic heterocyclic aromatic compound having 1 to 30 carbon atoms. Specific examples of the heteroaryl group having 1 to 30 carbon atoms include a 1,3,5-triazin-2-yl group, a 1,2,4-triazin-3-yl group, a pyrimidin-4-yl group, a pyrazin-2-yl group, a 2-pyridyl group, a 3-pyridyl group, a 4-pyridyl group, a carbazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzonaphthofuranyl group, a benzonaphthothiophenyl group, an indolocarbazolyl group, a benzofurocarbazolyl group, a benzothienocarbazolyl group, an indenocarbazolyl group, a dibenzocarbazolyl group, and the like. When the arylene group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a phenyl group, and the like.

[0104] The above are examples of the substituents that can be applied to the above general formula.

[0105] Specific examples of the organic compound of one embodiment of the present invention represented by the above general formula include organic compounds represented by the following structural formulas (100) to (156).

[0106] [ka]

[0107] [ka]

[0108] [ka]

[0109] [ka]

[0110] The organic compounds represented by the above structural formulas (100) to (156) are examples of organic compounds of one embodiment of the present invention; however, one embodiment of the present invention is not limited thereto.

[0111] Next, a synthesis method of an organic compound represented by the following general formula (G1) will be described as an example of an organic compound according to one embodiment of the present invention. Note that the synthesis method of the general formula (G1) can be performed using various reactions and is not limited to the following synthesis method.

[0112] [ka]

[0113] In the above general formula (G1), R 2 ~R 9At least one of the groups is a group represented by general formula (R-1), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R 11 ~R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and each of p and q independently represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the groups are groups represented by general formula (R-1), they may be the same or different.

[0114] As shown in the following synthesis scheme (A-1), a compound (a1) having a halogen compound or a triflate group of a 1,10-phenanthroline derivative and a compound (a2) having a boronic acid bonded to a group represented by general formula (R-1) can be coupled by the Suzuki-Miyaura reaction to obtain an organic compound represented by general formula (G1), which is one embodiment of the present invention.

[0115] [ka]

[0116] In the above compound (a1), X 2 ~X 9At least one of these is a halogen or a triflate group, and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0117] In the above compound (a2), Q represents a boronyl group (-B(OH)2), and α 1 represents a substituted or unsubstituted aryl-diyl group, n represents 1 or 2, and when n is 2, the multiple substituted or unsubstituted aryl-diyl groups may be the same or different from each other, R 11 ~R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and each of p and q independently represents 0 or 1. 11 ~R 18 Any two of these may be bonded to each other to form a ring. When Q is a boronyl group in compound (a2), a boronic acid ester or a cyclic triol borate salt may be used.

[0118] In the above synthesis scheme (A-1), m is a positive number.

[0119] In the above general formula (G1), R 2 ~R 9 At least one of the groups is a group represented by general formula (R-1), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. 1represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R 11 ~R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and each of p and q independently represents 0 or 1. 11 ~R 18 Any two of R may be bonded to each other to form a ring; 2 ~R 9 When two or more of the groups are groups represented by general formula (R-1), they may be the same or different.

[0120] Examples of the palladium catalyst that can be used in the coupling reaction represented by the above synthesis scheme (A-1) include palladium acetate (II), tetrakis(triphenylphosphine)palladium (0), bis(triphenylphosphine)palladium (II) dichloride, etc. Examples of the ligand of the palladium catalyst include (±)-2,2'-bis(diphenylphosphino)-1,1'-binaphthyl, tri(ortho-tolyl)phosphine, triphenylphosphine, tricyclohexylphosphine, etc.

[0121] Examples of the base that can be used in the coupling reaction represented by the above synthesis scheme (A-1) include organic bases such as potassium tert-butoxide, and inorganic bases such as potassium carbonate and sodium carbonate.

[0122] Solvents that can be used in the coupling reaction represented by the above synthesis scheme include toluene, xylene, mesitylene, benzene, tetrahydrofuran, dioxane, etc. However, the solvents that can be used are not limited to these.

[0123] In addition, the reaction performed in the above synthesis scheme is not limited to the Suzuki-Miyaura reaction, but may be the Buchwald-Hartwig reaction, the Migita-Kosugi-Still coupling reaction using an organotin compound, a coupling reaction using a Grignard reagent, the Ullmann reaction using copper or a copper compound, a nucleophilic substitution reaction, or the like.

[0124] Furthermore, various types of the above-mentioned compound (a1) and compound (a2) are commercially available or can be synthesized.

[0125] The organic compound of one embodiment of the present invention can be synthesized as described above; however, the present invention is not limited thereto, and the compound may be synthesized by another synthesis method.

[0126] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0127] (Embodiment 2) In this embodiment, a light-emitting device in which the organic compound of one embodiment of the present invention is used for an intermediate layer will be described with reference to FIGS.

[0128] 1A is a schematic diagram of two adjacent tandem light-emitting devices, a light-emitting device 130a and a light-emitting device 130b, formed on the same insulating surface. The light-emitting device 130a and the light-emitting device 130b are light-emitting devices in which a part of an organic compound layer is processed by using a lithography method.

[0129] The light-emitting device 130a is located on the insulating layer 175 and has a first electrode 101a including an anode, a second electrode 102 including a cathode, and an organic compound layer 103a. The organic compound layer 103a is located between the first electrode 101a and the second electrode 102. The organic compound layer 103a has a configuration in which a first light-emitting unit 501a and a second light-emitting unit 502a are stacked with an intermediate layer 160a sandwiched therebetween. The first light-emitting unit 501a has a first light-emitting layer 113a_1. The intermediate layer 160a has a first layer 161a and a second layer 162a. The second light-emitting unit 502a has a second light-emitting layer 113a_2 and an electron injection layer 115. It can also be said that the intermediate layer 160a is located between the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2.

[0130] In the light-emitting device 130a, each layer of the organic compound layer 103a other than the electron injection layer 115 is processed using a lithography method. Therefore, each layer of the organic compound layer 103a other than the electron injection layer 115 is independent of the adjacent light-emitting device, the light-emitting device 130b. In addition, the ends (contours) of each layer of the organic compound layer 103a other than the electron injection layer 115 are aligned or approximately aligned in the vertical direction to the substrate. That is, the first light-emitting layer 113a_1, the intermediate layer 160a (the first layer 161a and the second layer 162a), and the second light-emitting layer 113a_2 are independent of the first light-emitting layer 113b_1, the intermediate layer 160b (the first layer 161b and the second layer 162b), and the second light-emitting layer 113b_2. Moreover, the edges (outlines) of the first light-emitting layer 113a_1, the intermediate layer 160a (the first layer 161a and the second layer 162a), and the second light-emitting layer 113a_2 coincide or approximately coincide in the direction perpendicular to the substrate.

[0131] The light-emitting device 130b is located on the insulating layer 175 and includes a first electrode 101b including an anode, a second electrode 102 including a cathode, and an organic compound layer 103b. The organic compound layer 103b is located between the first electrode 101b and the second electrode 102. The organic compound layer 103b includes a first light-emitting unit 501b and a second light-emitting unit 502b stacked with an intermediate layer 160b sandwiched therebetween. The first light-emitting unit 501b includes a first light-emitting layer 113b_1. The intermediate layer 160b includes a first layer 161b and a second layer 162b. The second light-emitting unit 502b includes a second light-emitting layer 113b_2 and an electron injection layer 115. It can also be said that the intermediate layer 160b is located between the first light-emitting layer 113b_1 and the second light-emitting layer 113b_2.

[0132] In the light-emitting device 130b, each layer of the organic compound layer 103b other than the electron injection layer 115 is processed using a lithography method. Therefore, each layer of the organic compound layer 103b other than the electron injection layer 115 is independent of the adjacent light-emitting device, the light-emitting device 130a. In addition, the ends (contours) of each layer of the organic compound layer 103b other than the electron injection layer 115 are aligned or approximately aligned in the vertical direction to the substrate. That is, the first light-emitting layer 113b_1, the intermediate layer 160b (the first layer 161b and the second layer 162b), and the second light-emitting layer 113b_2 are independent of the first light-emitting layer 113a_1, the intermediate layer 160a (the first layer 161a and the second layer 162a), and the second light-emitting layer 113a_2. Moreover, the edges (outlines) of the first light-emitting layer 113b_1, the intermediate layer 160b (the first layer 161b and the second layer 162b), and the second light-emitting layer 113b_2 coincide or approximately coincide in the direction perpendicular to the substrate.

[0133] The electron injection layer 115 and the second electrode 102 are preferably formed after processing, by using lithography, each layer of the organic compound layer 103a other than the electron injection layer 115 and each layer of the organic compound layer 103b other than the electron injection layer 115. In other words, the electron injection layer 115 and the second electrode 102 are preferably a continuous layer shared by the light-emitting device 130a and the light-emitting device 130b.

[0134] The driving voltage of the light-emitting device can be reduced by using a donor substance (also called an electron donor) in the electron injection layer 115, which is preferable. Typical examples of the donor substance include alkali metals such as lithium (Li) having a small work function, and compounds of the alkali metals.

[0135] When an electron injection layer containing such a donor substance is processed by lithography as the interface of an organic compound layer, the influence of oxygen or water in the atmosphere, or chemicals or water during the process may cause a significant increase in the driving voltage or a significant decrease in the current efficiency in the light-emitting device. However, in one embodiment of the present invention, the electron injection layer 115 is formed after each layer other than the electron injection layer 115 is processed by lithography, so that even if a donor substance is used for the electron injection layer 115, deterioration of the characteristics of the light-emitting device can be avoided.

[0136] By processing the organic compound layer using lithography, the distance d between each layer other than the electron injection layer 115 of the organic compound layer 103a and each layer other than the electron injection layer 115 of the organic compound layer 103b can be narrowed compared to when performing mask deposition. Specifically, the distance d can be narrowed to less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. In addition, by using an exposure device for LSI, for example, in a process on a Si wafer, the distance d can be narrowed to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less.

[0137] In addition, it is preferable that an insulating layer is provided in the gap between each layer of the organic compound layer 103a other than the electron injection layer 115 and each layer of the organic compound layer 103b other than the electron injection layer 115, so that each layer of the organic compound layer 103a other than the electron injection layer 115 is separated from each layer of the organic compound layer 103b other than the electron injection layer 115. In this case, there is a region where the insulating layer is in contact with the electron injection layer 115 or the second electrode 102.

[0138] In the light-emitting device 130a, the first light-emitting unit 501a preferably includes a hole injection layer 111a, a first hole transport layer 112a_1, and a first electron transport layer 114a_1 in addition to the first light-emitting layer 113a_1. The second light-emitting unit 502a preferably includes a second hole transport layer 112a_2 and a second electron transport layer 114a_2 in addition to the second light-emitting layer 113a_2 and the electron injection layer 115. The intermediate layer 160a may include a third layer 163a between the first layer 161a and the second layer 162a. In addition, when the anode side surface of the light-emitting unit is in contact with the intermediate layer 160a, as in the second light-emitting unit 502a, the second layer 162a located on the cathode side of the intermediate layer 160a can also serve as a hole injection layer for the second light-emitting unit 502a. Therefore, although it may not be necessary to provide a hole injection layer for the light-emitting unit, one may be provided.

[0139] In the light-emitting device 130b, the first light-emitting unit 501b preferably includes a hole injection layer 111b, a first hole transport layer 112b_1, and a first electron transport layer 114b_1 in addition to the first light-emitting layer 113b_1. The second light-emitting unit 502b preferably includes a second hole transport layer 112b_2 and a second electron transport layer 114b_2 in addition to the second light-emitting layer 113b_2 and the electron injection layer 115. The intermediate layer 160b may include a third layer 163b between the first layer 161b and the second layer 162b. In addition, when the anode side surface of the light-emitting unit is in contact with the intermediate layer 160b, as in the second light-emitting unit 502b, the second layer 162b located on the cathode side of the intermediate layer 160b can also serve as a hole injection layer for the second light-emitting unit 502b. Therefore, although it may not be necessary to provide a hole injection layer for the light-emitting unit, a hole injection layer may be provided.

[0140] 1A, the uppermost layer of each layer of the organic compound layer 103a other than the electron injection layer 115 is preferably the second electron transport layer 114a_2. Similarly, the uppermost layer of each layer of the organic compound layer 103b other than the electron injection layer 115 is preferably the second electron transport layer 114b_2. By processing the interface between the second electron transport layer 114a_2 and the second electron transport layer 114b_2 using a lithography method, the interface can be less susceptible to the effects of oxygen or water in the atmosphere, and chemicals or water during processing, compared to processing the interface between the second light-emitting layer 113a_2 and the second light-emitting layer 113b_2. Therefore, by making the uppermost layer of each organic compound layer other than the electron injection layer 115 an electron transport layer, it is possible to further avoid deterioration of the characteristics of the light-emitting device due to the fabrication using a lithography method, but it is preferable to perform processing using lithography at least in the layers above the second light-emitting layer 113a_2 and the second light-emitting layer 113b_2.

[0141] Although FIG. 1A shows an example in which each organic compound layer includes two light-emitting units, one embodiment of the present invention is not limited thereto. Each organic compound layer may include three or more light-emitting units. By stacking a plurality of light-emitting units between a pair of electrodes with an intermediate layer sandwiched therebetween, a light-emitting device that can emit light with high luminance while maintaining a low current density and has good reliability can be realized. In addition, a light-emitting device with low power consumption can be realized. Although not shown in FIG. 1A, each light-emitting unit may have a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, or the like in addition to the above-described structure. Each layer may be a stack of two or more layers.

[0142] In this specification, the configuration of one of the light-emitting device 130a and the light-emitting device 130b may be illustrated as an example, but the other may have a similar configuration.

[0143] The intermediate layer 160a sandwiched between the first light-emitting unit 501a and the second light-emitting unit 502a may inject electrons into one light-emitting unit and inject holes into the other light-emitting unit when, for example, a voltage is applied between the first electrode 101a and the second electrode 102. For example, in FIG. 1(A), when a voltage is applied so that the potential of the second electrode 102 is higher than the potential of the first electrode 101a, the intermediate layer 160a injects electrons into the first light-emitting unit 501a and injects holes into the second light-emitting unit 502a.

[0144] In the light-emitting device 130a illustrated in FIG. 1A, when a voltage is applied between a pair of electrodes (a first electrode 101a and a second electrode 102), electrons are injected from the cathode into the electron injection layer 115, and holes are injected from the anode into the hole injection layer 111a, causing a current to flow. Electrons are injected from the first layer 161a located on the anode side of the intermediate layer 160a into the first electron transport layer 114a_1 in the first light-emitting unit 501a, and holes are injected from the second layer 162a located on the cathode side of the intermediate layer 160a into the second hole transport layer 112a_2 in the second light-emitting unit 502a. The injected carriers (electrons and holes) are recombined to form excitons. In the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 having a light-emitting material, when carriers (electrons and holes) recombine to form excitons, the light-emitting materials in the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 become excited, and light is emitted from the light-emitting materials.

[0145] 1A, the first layer 161a of the intermediate layer 160a located on the anode side is preferably provided adjacent to the first electron transport layer 114a_1 and between the first electron transport layer 114a_1 and the second light-emitting unit 502a. With this configuration, electrons can be efficiently injected into the first light-emitting unit 501a.

[0146] Here, in order to reduce the driving voltage of the light-emitting device and to efficiently emit light, it is preferable to reduce the barrier for electron injection from the intermediate layer 160a to the first electron transport layer 114a_1, and to smoothly inject and transport electrons generated in the intermediate layer 160a to the first electron transport layer 114a_1. For this purpose, an alkali metal or an alkaline earth metal or a compound thereof having a small work function is generally used for the intermediate layer 160a. However, the metal and the compound are easily deteriorated by oxygen or water in the atmosphere, and water or chemicals used in the processing step using the lithography method, which causes a significant increase in the driving voltage or a significant decrease in the current efficiency in the light-emitting device.

[0147] Therefore, it is preferable to use a material for the intermediate layer that is resistant to oxygen and water in the atmosphere, as well as water and chemicals used during processing steps using lithography.To achieve this, it is preferable to use a metal for the intermediate layer 160a that is stable to oxygen and water in the atmosphere and resistant to water and chemicals.However, such metals are stable and have low electron injection properties, and therefore may form an electron injection barrier between the intermediate layer 160a and the first electron transport layer 114a_1, which may cause problems such as an increase in the driving voltage of the light-emitting device and a decrease in light-emitting efficiency.

[0148] Therefore, in the light-emitting device according to one embodiment of the present invention, the first layer 161a located on the anode side of the intermediate layer 160a is preferably made of the organic compound according to one embodiment of the present invention, and more preferably made of the organic compound according to one embodiment of the present invention and a metal. By using the organic compound according to one embodiment of the present invention and a metal, the organic compound according to one embodiment of the present invention and the metal interact with each other to form a donor level (SOMO (Singly Occupied Molecular Orbital) level or HOMO (Highest Occupied Molecular Orbital) level), thereby reducing the barrier for electron injection from the intermediate layer 160a to the first electron-transport layer 114a_1, and electrons generated in the intermediate layer 160a can be smoothly injected and transported to the first electron-transport layer 114a_1. Therefore, it is possible to form an intermediate layer that has good electron injection properties and is resistant to oxygen and water in the atmosphere, as well as water and chemicals used during processing steps using lithography methods, thereby making it possible to obtain a light-emitting device with reduced driving voltage and high light-emitting efficiency.

[0149] Metals with small work functions, such as alkali metals and alkaline earth metals, and compounds thereof are highly reactive with oxygen and water, and therefore, when used in a light-emitting device processed by lithography, they may cause a decrease in light-emitting efficiency, an increase in driving voltage, a decrease in driving life, the occurrence of shrink (a non-light-emitting region at the end of the light-emitting part), etc., leading to a decrease in the characteristics and reliability of the light-emitting device, etc. However, in one embodiment of the present invention, even when an alkali metal or an alkaline earth metal, or a compound thereof is used, the composite material is stabilized by mutual interaction with the organic compound of one embodiment of the present invention, and therefore an intermediate layer that is resistant to oxygen and water in the air, as well as water and chemical solutions used in a processing step using lithography can be formed. In one embodiment of the present invention, by using an alkali metal or an alkaline earth metal or a compound thereof as the metal, the donor level (SOMO level or HOMO level) formed by mutual interaction with the organic compound of one embodiment of the present invention can be made to be at a high energy level, which is preferable because it is possible to form a structure in which the barrier for electron injection from the intermediate layer 160a to the first electron-transport layer 114a_1 is reduced and electrons generated in the intermediate layer 160a are smoothly injected and transported to the first electron-transport layer 114a_1.

[0150] In addition, in the light-emitting device of one embodiment of the present invention, any one of transition metals (metal elements of Groups 3 to 11) and metal elements of Groups 12 to 14 among typical metals can be used as the metal. These metals have low reactivity with oxygen and water in the air, and with water and chemicals used in a lithography process. Thus, when used in a light-emitting device, these metals have the advantage of being less susceptible to deterioration due to water and oxygen, which is a concern when a metal with a low work function is used. On the other hand, transition metals (metal elements of Groups 3 to 11) and metal elements of Groups 12 to 14 among typical metals are stable and have low electron injection properties, which can cause a decrease in the light-emitting efficiency of the light-emitting device, an increase in driving voltage, a decrease in driving lifetime, and the like. However, in one embodiment of the present invention, even if any one of transition metals (metal elements of Groups 3 to 11) and metal elements of Groups 12 to 14 among typical metals is used, it is possible to form a donor level (SOMO level or HOMO level) by mutual interaction with the organic compound of one embodiment of the present invention, so that a structure can be formed in which the barrier for electron injection from the intermediate layer 160a to the first electron-transport layer 114a_1 is reduced and electrons generated in the intermediate layer 160a are smoothly injected and transported to the first electron-transport layer 114a_1. In addition, it is preferable because an intermediate layer that is resistant to oxygen and water in the air, as well as water and chemicals used in a processing step using a lithography method can be formed. Therefore, one embodiment of the present invention can provide a light-emitting device that has excellent moisture resistance, water resistance, oxygen resistance, and chemical resistance, has a low driving voltage, and has high luminous efficiency.

[0151] When the organic compound of one embodiment of the present invention interacts with a metal, it is preferable that the total number of electrons in the organic compound of one embodiment of the present invention and the metal is an odd number, because the stabilization energy is smaller and the donor level (SOMO level or HOMO level) formed can be at a high energy level. Therefore, when the organic compound of one embodiment of the present invention has an even number of electrons, the metal is preferably in an odd group in the periodic table.

[0152] In addition, in consideration of the manufacturing process of the light-emitting device, the EL layer of the light-emitting device, especially the intermediate layer, is generally formed by a vacuum deposition method. In this case, it is preferable to use a material that can be easily vacuum-deposited, that is, a material with a low melting point. Metals of Group 11 and Group 13 elements have low melting points and can be suitably used for vacuum deposition. In addition, metals of Group 11 and Group 13 elements are stable to oxygen and water in the air and are therefore preferable. In addition, the vacuum deposition method is preferable because it allows metal atoms and organic compounds to be easily mixed.

[0153] Ag and In can also be used as cathode materials. Using the same material for the intermediate layer and the cathode is preferable because it simplifies the fabrication of the light-emitting device. It also reduces the manufacturing cost of the light-emitting device.

[0154] Next, the configuration of the intermediate layer that can be applied to the light emitting device 130a and the light emitting device 130b will be described in detail.

[0155] The First Layer The organic compound according to one embodiment of the present invention is preferably applied to the first layer (the first layer 161a and the first layer 161b) located on the anode side of the intermediate layer, and a mixed layer or a stacked structure containing a metal and an organic compound according to one embodiment of the present invention is preferably applied. The metal and the organic compound according to one embodiment of the present invention are a combination that can form a SOMO or a HOMO that can function as a donor level by interacting with each other. By using a layer having such a combination in the first layer of the intermediate layer, electrons generated in the first layer can be easily injected into the first light-emitting unit. Alternatively, electrons generated in the second layer (the second layer 162a and the second layer 162b) located on the cathode side of the intermediate layer can be easily injected into the first light-emitting unit. Therefore, electrons can be easily injected into the first light-emitting unit, so that the driving voltage of the light-emitting device can be reduced and the light-emitting efficiency can be improved.

[0156] It is preferable to apply the organic compound of one embodiment of the present invention to the first layer located on the anode side among the intermediate layers, and it is preferable to apply a mixed layer or a stacked structure having a metal and the organic compound of one embodiment of the present invention. In the case of a stacked structure, it is preferable to stack the organic compound of one embodiment of the present invention on the anode side and the metal on the cathode side. By forming a mixed layer or a stacked structure of a metal and an organic compound of one embodiment of the present invention, the interaction between these substances is facilitated, and the metal and the organic compound of one embodiment of the present invention function as an electron donor, so that the electron injection barrier from the second light-emitting unit to the first light-emitting unit can be further reduced. Therefore, it is easier to inject electrons into the first light-emitting unit, so that the driving voltage of the light-emitting device can be further reduced and the light-emitting efficiency can be further improved. In addition, by forming a mixed layer of a metal and an organic compound of one embodiment of the present invention, the layer can be made less likely to crystallize than the case of a stacked structure. Therefore, when a part of the organic compound layer is processed by a lithography method, the layer can be made less likely to crystallize even if it is affected by oxygen or water in the air, or by chemicals or water during the process. It is possible to prevent an increase in the driving voltage or a decrease in the current efficiency of the light-emitting device due to the crystallization of the intermediate layer. Therefore, by forming the organic compound layer as a mixed layer rather than a laminated structure, the organic compound layer can be suitably used as an intermediate layer of a light-emitting device in which a part of the organic compound layer is processed by lithography.

[0157] <metal> The metal may be a main group metal or a transition metal.

[0158] Typical metals that can be used include alkali metals (Group 1 elements) such as Li, Na, K, and Cs, alkaline earth metals (Group 2 elements) such as Mg, Ca, and Ba, Group 12 elements such as Zn, earth metals (Group 13 elements) such as Al and In, Group 14 elements such as Sn, and compounds of these.

[0159] The use of an alkali metal or an alkaline earth metal or a compound thereof as the metal is preferable because it allows a donor level formed by interaction with the organic compound of one embodiment of the present invention to be at a high energy level, and electrons generated in the intermediate layer can be smoothly injected and transported to the electron-transport layer, thereby making it possible to provide a light-emitting device that has a low driving voltage and emits light with high efficiency.

[0160] As the transition metal, Group 3 elements including lanthanides such as Y, Eu, Yb, Group 7 elements such as Mn, Group 8 elements such as Fe, Group 9 elements such as Co, Group 10 elements such as Ni and Pt, Group 11 elements such as Cu, Ag, Au, or compounds thereof can be used. Transition metals are preferred because they have low reactivity with components in the atmosphere such as water and oxygen.

[0161] Among the above, it is more preferable to use a metal belonging to an odd group (Group 1, Group 3, Group 5, Group 7, Group 9, Group 11, or Group 13). Among these odd group transition metals, metals having one electron (unpaired electron) in the outermost orbital are particularly preferable because they easily form a SOMO level with the organic compound of one embodiment of the present invention.

[0162] In addition, metals that have a low melting point and can be formed into a film by vacuum deposition are preferable because they can easily form a mixed layer with an organic compound. Specifically, for example, metals of Group 11 elements and Group 13 elements have a low melting point and can be suitably used for vacuum deposition. In addition, metals of Group 11 elements and Group 13 elements are preferable because they are stable to oxygen and water in the atmosphere.

[0163] In addition to the metal and the organic compound of one embodiment of the present invention, an organic compound having an electron-transporting property may be added to the first layer of the intermediate layer. The organic compound having an electron-transporting property is an organic compound having an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2A substance having an electron mobility of 1 / Vs or more is preferable. Note that other substances can be used as long as they have a higher electron transporting property than a hole transporting property.

[0164] In addition, the organic compound having an electron transporting property is preferably an organic compound having a π-electron-deficient heteroaromatic ring. The organic compound having a π-electron-deficient heteroaromatic ring is preferably any one or more of an organic compound having an azole skeleton, an organic compound having a heteroaromatic ring having a pyridine skeleton, an organic compound having a heteroaromatic ring having a diazine skeleton, and an organic compound having a heteroaromatic ring having a triazine skeleton.

[0165] Specific examples of organic compounds having electron transport properties include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H- Organic compounds with an azole skeleton, such as carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), and 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy) ), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), and other organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo [f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: Abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (Abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthren-9-yl)phenyl]pyrimidine (Abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (Abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (Abbreviation: 4,6mC zP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophene-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophene -4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalene)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 6-(biphenyl-3-yl)-4-[3,5-Bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[ organic compounds with a diazine skeleton such as PC-cgDBCzQz, 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (mBnfBPTzn), and 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl} mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl] mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-Triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl ]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn) and other organic compounds having a triazine skeleton.

[0166] Among the above, organic compounds having a phenanthroline ring, such as BPhen, BCP, NBPhen and mPPhen2P, are preferred, and organic compounds having a phenanthroline ring dimer structure, such as mPPhen2P, are more preferred due to their excellent stability.

[0167] In addition, the number of carbon atoms of the organic compound having electron transport properties is preferably 25 or more and 100 or less. By setting the number of carbon atoms in this range, the organic compound can be made to have excellent sublimation properties, so that thermal decomposition of the organic compound can be suppressed during vacuum deposition, and good material usage efficiency can be obtained. gAn organic compound having a crystallization temperature of 100°C or higher can be used. This makes it possible to make the intermediate layer a layer that is difficult to crystallize. Therefore, when processing a part of the organic compound layer using a lithography method, even if it is affected by oxygen or water in the air, or by chemicals or water during the process, or even if it undergoes a heating process for desorbing water adsorbed in the organic compound layer, it is possible to make the layer that is difficult to crystallize. This makes it possible to prevent an increase in the driving voltage or a decrease in the current efficiency of the light-emitting device that would otherwise occur due to the intermediate layer being crystallized. Therefore, T g By using an organic compound having a temperature of 100° C. or higher as an organic compound having electron transport properties, the organic compound can be suitably used as an intermediate layer in a light-emitting device in which a part of the organic compound layer is processed by a lithography method.

[0168] An organic compound having a phenanthroline ring and T g As an organic compound with a temperature of 100°C or higher, NBPhen (T g : 165℃), mPPhen2P(T g : 135℃), 2,2'-(biphenyl-4,4'-diyl)bis(9-phenyl-1,10-phenanthroline) (abbreviation: PPhen2BP) (T g : 166℃), 2,2'-biphenyl-3,3'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2BP) (T g : 144℃), 2,8-bis(phenanthroline-5-yl)dibenzofuran (abbreviation: 2,8Phen2DBf) (T g : 210℃), 5,5',5''-(benzene-1,3,5-triyl)tri-1,10-phenanthroline (abbreviation: Phen3P) (T g : 257℃), etc.

[0169] In addition, an organic compound having an acid dissociation constant pKa of 4 or more and less than 8 can be used as the organic compound having electron transport properties. By doing so, the hole transport properties of the organic compound having electron transport properties can be reduced, so that the hole transport properties in the first layer 161a of the intermediate layer 160a can be reduced, and holes can be prevented from being transported from the first layer 161a to the second layer 162a, which is preferable because an efficient light-emitting device can be obtained. In addition, if the acid dissociation constant pKa becomes too high, the solubility in water increases, and the resistance to water and chemicals used in the process using the lithography method may be poor. Therefore, the acid dissociation constant pKa of the organic compound having electron transport properties is preferably 4 or more and less than 8.

[0170] The ratio of the metal to the organic compound of one embodiment of the present invention (when an organic compound having an electron-transporting property is further added, the total of the organic compound of one embodiment of the present invention and the organic compound having an electron-transporting property) is preferably 0.1 to 10 in molar ratio, more preferably 0.2 to 5 in molar ratio, and even more preferably 0.5 to 2 in molar ratio. Alternatively, the volume ratio is preferably 0.01 to 0.3 in molar ratio, more preferably 0.02 to 0.2 in molar ratio, and even more preferably 0.05 to 0.1 in molar ratio. By mixing the metal and the organic compound of one embodiment of the present invention at such a ratio, an intermediate layer having good electron injection property can be provided. In addition, when an organic compound having an electron-transporting property is further added, the ratio of the organic compound of one embodiment of the present invention to the organic compound having an electron-transporting property is preferably 0.1 to 10 in molar ratio, more preferably 0.2 to 5 in molar ratio, and even more preferably 0.5 to 2 in molar ratio. By mixing the organic compound of one embodiment of the present invention and the organic compound having an electron-transporting property at such a ratio, an intermediate layer having good electron-transporting property can be provided.

[0171] The thickness of the first layer 161a of the intermediate layer 160a located on the anode side is preferably 3 nm to 20 nm, more preferably 5 nm to 10 nm, which allows the metal and the organic compound of one embodiment of the present invention to function well as a composite material, and a light-emitting device with high emission efficiency can be provided.

[0172] The Second Layer When a mixed layer or a laminated layer structure containing a metal and an organic compound according to one embodiment of the present invention is applied to the first layer of the intermediate layer, a layer containing a third organic compound and a fourth organic compound (details of which will be described later) is preferably applied to the second layer, which is preferable because it allows for good hole injection into the upper light-emitting layer.

[0173] <Third organic compound> As the third organic compound, it is preferable to use an organic compound having a hole transporting property. As the organic compound having a hole transporting property, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. In addition, as the organic compound having a hole transporting property, a compound having a molecular weight of 1×10 -6 cm 2 It is preferable that the organic compound has a hole mobility of 100 / Vs or more. The organic compound having hole transport properties is preferably a compound having a condensed aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the condensed aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, etc. are preferable. As the π-electron-rich heteroaromatic ring, a condensed aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton in the ring is preferable, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further condensed to the above rings is preferable.

[0174] Such organic compounds having hole transport properties preferably have any of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, the organic compounds may be aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group. It is preferable that the organic compounds having hole transport properties are substances having an N,N-bis(4-biphenyl)amino group, because this allows the manufacture of a light-emitting device with a long life.

[0175] Specific examples of organic compounds having hole transport properties as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophene-4-yl)phenyl]-4-amino-p-terphenyl ]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviation: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviation: αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan-4''-phenyltriphenylamine (abbreviation: TPBiAβNBi), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-Dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis( 9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, etc. can be mentioned.

[0176] In addition, examples of organic compounds having hole transport properties that can be used include aromatic amine compounds such as N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0177] <The fourth organic compound> The fourth organic compound is preferably a substance having an acceptor property with respect to the third organic compound. As the substance having an acceptor property, an organic compound having an electron-withdrawing group (such as a halogen group or a cyano group) is preferably used, and an organic compound having at least four halogen groups and / or four cyano groups is more preferably used. Specific examples include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile, etc. In particular, compounds in which an electron-withdrawing group is bonded to a condensed aromatic ring having a plurality of heteroatoms, such as HAT-CN, are thermally stable and preferable. Radialene derivatives having electron-withdrawing groups (especially halogen groups such as fluoro groups, cyano groups, etc.) [3] are preferred because they have very high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. In addition to the organic compounds described above, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used as the acceptor substances.

[0178] The second layer is preferably one in which a signal is observed by electron spin resonance. For example, the spin density due to a signal observed near a g value of 2.00 is 1×10 17 spins / cm 3 More preferably, 1×10 18spins / cm 3 More preferably, 1×10 19 spins / cm 3 The above is even more preferable. In this way, the second layer can function as a charge generating layer, and a light-emitting device with low driving voltage and high efficiency can be fabricated.

[0179] The Third Layer Furthermore, a third layer may be provided between the first and second layers of the intermediate layer in order to facilitate the transfer of electrons between these two layers.

[0180] The third layer contains a substance having an electron transporting property and has a function of smoothly transferring electrons by preventing an interaction between the first layer and the second layer. The LUMO level of the substance having an electron transporting property contained in the third layer is preferably between the LUMO level of the acceptor substance in the second layer and the LUMO level of an organic compound contained in a layer in contact with an intermediate layer in the light-emitting unit on the first electrode side (the first electron-transporting layer 114a_1 in the first light-emitting unit 501a and the first electron-transporting layer 114b_1 in the first light-emitting unit 501b in FIG. 1A). The specific energy level of the LUMO level of the substance having electron transport properties used in the third layer is -5.0 eV or more, preferably -5.0 eV to -3.0 eV, more preferably -4.30 eV to -3.00 eV, and more preferably -4.30 eV to -3.30 eV, which makes it easier to inject electrons generated in the second layer into the first layer and thus suppresses an increase in the driving voltage of the light-emitting device, which is preferable. Note that, as the substance having electron transport properties used in the third layer, a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand is preferably used.

[0181] Specifically, perylene tetracarboxylic acid derivatives such as diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA-F6), 3,4,9,10-perylene tetracarboxylic diimide (abbreviation: PTCDI), and 3,4,9,10-perylene tetracarboxyl-bis-benzimidazole (abbreviation: PTCBI), (C60-Ih)[5,6]fullerene (abbreviation: C60), (C70-D5h)[5,6]fullerene (abbreviation: C70), and phthalocyanine (abbreviation: HPc) can be used. In addition, metal phthalocyanines having copper, zinc, cobalt, iron, chromium, nickel, etc., such as copper phthalocyanine (abbreviation: CuPc), zinc phthalocyanine (abbreviation: ZnPc), cobalt phthalocyanine (abbreviation: CoPc), iron phthalocyanine (abbreviation: FePc), tin phthalocyanine (abbreviation: SnPc), tin oxide phthalocyanine (abbreviation: SnOPc), titanium oxide phthalocyanine (abbreviation: TiOPc), vanadium oxide phthalocyanine (abbreviation: VOPc), and derivatives thereof, can be used. In particular, phthalocyanine-based metal complexes such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine are preferred.

[0182] The thickness of the third layer is preferably 1 nm or more and 10 nm or less, and more preferably 2 nm or more and 5 nm or less.

[0183] In this embodiment, an example is shown in which the organic compound of one embodiment of the present invention is used in an intermediate layer of a light-emitting device in which a part of an organic compound layer is processed by lithography, but the embodiment of the present invention is not limited thereto. The organic compound of one embodiment of the present invention may be used in an intermediate layer of a light-emitting device that does not undergo a step of processing an organic compound layer by lithography.

[0184] 1B is a schematic diagram of two adjacent single-type light-emitting devices formed on the same insulating surface, light-emitting device 130c and light-emitting device 130d, in which all of the organic compound layers are processed by lithography.

[0185] The light-emitting device 130c is located on the insulating layer 175 and includes a first electrode 101c including an anode, a second electrode 102 including a cathode, and an organic compound layer 103c. The organic compound layer 103c is located between the first electrode 101c and the second electrode 102. The organic compound layer 103c also includes a light-emitting layer 113c and an electron injection layer 115c.

[0186] In the light-emitting device 130c, the organic compound layer 103c is processed using a lithography method. Therefore, the organic compound layer 103c is independent of the light-emitting device 130d, which is an adjacent light-emitting device. In addition, the ends (outlines) of the layers of the organic compound layer 103c coincide or approximately coincide in the vertical direction with respect to the substrate. That is, the light-emitting layer 113c and the electron injection layer 115c are independent of the light-emitting layer 113d and the electron injection layer 115d. In addition, the ends (outlines) of the light-emitting layer 113c and the electron injection layer 115c coincide or approximately coincide in the vertical direction with respect to the substrate.

[0187] The light-emitting device 130d is located on the insulating layer 175 and includes a first electrode 101d including an anode, a second electrode 102 including a cathode, and an organic compound layer 103d. The organic compound layer 103d is located between the first electrode 101d and the second electrode 102. The organic compound layer 103d also includes a light-emitting layer 113d and an electron injection layer 115d.

[0188] In the light-emitting device 130d, the organic compound layer 103d is processed using a lithography method. Therefore, the organic compound layer 103d is independent of the light-emitting device 130c, which is an adjacent light-emitting device. In addition, the ends (outlines) of the layers of the organic compound layer 103d are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the light-emitting layer 113d and the electron injection layer 115d are independent of the light-emitting layer 113c and the electron injection layer 115c. In addition, the ends (outlines) of the light-emitting layer 113d and the electron injection layer 115d are aligned or approximately aligned in a direction perpendicular to the substrate.

[0189] The second electrode 102 is preferably formed after all layers of the organic compound layer 103c and the organic compound layer 103d are processed by lithography. That is, the second electrode 102 is preferably a continuous layer shared by the light-emitting device 130c and the light-emitting device 130d.

[0190] By processing the organic compound layer using lithography, the distance d between each layer of the organic compound layer 103c and each layer of the organic compound layer 103d can be narrowed compared to when performing mask deposition. Specifically, the distance d can be narrowed to less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. In addition, by using an exposure device for LSI, for example, in a process on a Si wafer, the distance d can be narrowed to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less.

[0191] In addition, it is preferable that an insulating layer is provided in the gap between each layer of the organic compound layer 103c and each layer of the organic compound layer 103d to separate the organic compound layer 103c from each layer of the organic compound layer 103d. In this case, there is a region where the insulating layer and the second electrode 102 are in contact with each other.

[0192] In the light-emitting device 130c, the organic compound layer 103c preferably has a hole injection layer 111c, a hole transport layer 112c, and an electron transport layer 114c in addition to the light-emitting layer 113c and the electron injection layer 115c. In the light-emitting device 130d, the organic compound layer 103d preferably has a hole injection layer 111d, a hole transport layer 112d, and an electron transport layer 114d in addition to the light-emitting layer 113d and the electron injection layer 115d. In addition to the above-mentioned configuration, each organic compound layer may have a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, and the like. Each layer may be a laminate of two or more layers.

[0193] In the manufacturing method of the light-emitting device 130c and the light-emitting device 130d, after all layers of the organic compound layer are formed, they are processed by using a lithography method, and then the second electrode 102 is formed. As described above, when the electron injection layer containing a donor substance is processed by using a lithography method as the interface of the organic compound layer, the influence of oxygen or water in the air, or chemicals or water during the process may cause a significant increase in the driving voltage or a significant decrease in the current efficiency in the light-emitting device. Therefore, it is preferable to apply the organic compound of one embodiment of the present invention to the electron injection layer 115c and the electron injection layer 115d, and it is preferable to apply a mixed layer or a laminate structure having a metal and the organic compound of one embodiment of the present invention. Specifically, it is preferable to apply the configuration of the first layer of the intermediate layer that can be applied to the light-emitting device 130a and the light-emitting device 130b described above to the electron injection layer 115c and the electron injection layer 115d.

[0194] By applying an organic compound according to one embodiment of the present invention to the electron-injection layer 115c and the electron-injection layer 115d, or by applying a mixed layer or a stacked layer structure containing a metal and an organic compound according to one embodiment of the present invention to the electron-injection layer 115c and the electron-injection layer 115d, a light-emitting device with excellent characteristics can be obtained even if the electron-injection layer 115c and the electron-injection layer 115d are processed by lithography at the interface of the organic compound layer.

[0195] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0196] (Embodiment 3) In this embodiment, a structure of a light-emitting device using an organic compound of one embodiment of the present invention, other than the intermediate layer, will be described.

[0197] 2(A) shows a light-emitting device 130. The light-emitting device 130 is a light-emitting device having an organic compound layer 103 including a light-emitting layer 113 between a first electrode 101 including an anode and a second electrode 102 including a cathode.

[0198] 2B shows a light-emitting device 130, which is another example of the light-emitting device of one embodiment of the present invention. The light-emitting device 130 is a tandem light-emitting device. The light-emitting device 130 includes, as the organic compound layer 103, a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2, and an intermediate layer 160.

[0199] In this embodiment, a light-emitting device having one intermediate layer 160 and two light-emitting units is described as an example, but the light-emitting device may have n (n is an integer equal to or greater than 1) intermediate layers and n+1 light-emitting units.

[0200] For example, the light-emitting device 130 shown in FIG. 2(C) is an example of a tandem-type light-emitting device in which n is 2 and the organic compound layer 103 includes a first light-emitting unit 501, a first intermediate layer 160_1, a second light-emitting unit 502, a second intermediate layer 160_2, and a third light-emitting unit 503. The color gamuts of the light emitted by the light-emitting layers in the light-emitting units may be the same or different. The light-emitting layer may have a single layer or a laminated structure. For example, white light can be obtained by a configuration in which the light-emitting layers in the first light-emitting unit and the third light-emitting unit emit light in the blue region, and the light-emitting layer in the laminated structure in the second light-emitting unit emits light in the red region and the green region.

[0201] The light-emitting device 130 shown in FIG. 2(D) is an example of a tandem-type light-emitting device in which n is 3 and the organic compound layer 103 includes a first light-emitting unit 501, a first intermediate layer 160_1, a second light-emitting unit 502, a second intermediate layer 160_2, a third light-emitting unit 503, a third intermediate layer 160_3, and a fourth light-emitting unit 504. The first light-emitting unit 501 includes a first light-emitting layer 113_1, the second light-emitting unit 502 includes a second light-emitting layer 113_2, the third light-emitting unit 503 includes a third light-emitting layer 113_3, and the fourth light-emitting unit 504 includes a fourth light-emitting layer 113_4. The color gamuts of the light emitted by the light-emitting layers in the light-emitting units may be the same or different. The light-emitting layer may be a single layer or a laminated structure. For example, of the four light-emitting units, three may be blue (B) and one may be green (G), two may be blue (B) and two may be yellow (Y), or one may be red (R), one may be green (G) and two may be blue (B).

[0202] The light-emitting device 130 may be, for example, a light-emitting device fabricated by a lithography method. In the case of a light-emitting device fabricated by a lithography method, at least the light-emitting layer 113 or the second light-emitting layer 113_2 and the organic compound layer closer to the first electrode 101 than the light-emitting layer 113 are processed simultaneously, and therefore their ends are roughly aligned in the vertical direction.

[0203] The organic compound layer 103 may include other functional layers in addition to the light-emitting layer. FIG. 2(A) illustrates a configuration in which the organic compound layer 103 includes a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113. The first light-emitting unit 501 and the second light-emitting unit 502 may include other functional layers in addition to the light-emitting layer. FIG. 2(B) illustrates a configuration in which the first light-emitting unit 501 includes a hole injection layer 111, a first hole transport layer 112_1, and a first electron transport layer 114_1 in addition to the first light-emitting layer 113_1, and the second light-emitting unit 502 includes a second hole transport layer 112_2, a second electron transport layer 114_2, and an electron injection layer 115 in addition to the second light-emitting layer 113_2. However, the configuration of the organic compound layer 103 in the present invention is not limited to this, and any of the layers may not be provided, or other layers may be provided. Representative examples of the other layers include a carrier block layer (a hole block layer, an electron block layer), an exciton block layer, etc.

[0204] Next, the configuration of the light emitting device 130 other than the intermediate layer 160 will be described.

[0205] Configuration of the first electrode The first electrode 101 is an electrode including an anode. The first electrode 101 may have a laminated structure, in which case a layer in contact with the organic compound layer 103 functions as the anode. The anode is preferably formed using a metal, alloy, conductive compound, or a mixture thereof having a large work function (specifically, 4.0 eV or more). Specific examples include indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by a sputtering method, but may also be formed by applying a sol-gel method or the like. As an example of a method for forming the indium oxide-zinc oxide, a method for forming the indium oxide-zinc oxide by a sputtering method using a target in which 1 to 20 wt % of zinc oxide is added to indium oxide may be used. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 to 5 wt % of tungsten oxide and 0.1 to 1 wt % of zinc oxide relative to indium oxide. Other materials used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or nitrides of metal materials (for example, titanium nitride). Alternatively, graphene can also be used as a material used for the anode. By using the second layer 162 in the intermediate layer 160 as a layer in contact with the anode (typically a hole injection layer), it becomes possible to select an electrode material regardless of the work function.

[0206] <Configuration of Hole Injection Layer> The hole injection layer 111 is provided in contact with the anode and has a function of facilitating the injection of holes into the organic compound layer 103 (first light-emitting unit 501). The hole injection layer 111 can be formed of a phthalocyanine-based compound such as phthalocyanine (abbreviation: HPc) or copper phthalocyanine (abbreviation: CuPc), an aromatic amine compound such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS).

[0207] The hole-injection layer 111 may be formed of a substance having an electron acceptor property. As the substance having an electron acceptor property, the substances exemplified as the acceptor substance used for the second layer 162 in the intermediate layer 160 can be used similarly.

[0208] The hole injection layer 111 may be formed using the hole transporting material used for the second layer 162 in the intermediate layer 160 described above.

[0209] In the hole injection layer 111, the organic compound having a hole transporting property used in the composite material is more preferably a substance having a relatively deep HOMO level of -5.7 eV or more and -5.4 eV or less. When the organic compound having a hole transporting property used in the composite material has a relatively deep HOMO level, it becomes easy to inject holes into the hole transporting layer, and it becomes easy to obtain a light-emitting device with a long lifetime. When the organic compound having a hole transporting property used in the composite material is a substance having a relatively deep HOMO level, the induction of holes is appropriately suppressed, and a light-emitting device with a long lifetime can be obtained.

[0210] By forming the hole injection layer 111, the hole injection property is improved, and a light emitting device with a low driving voltage can be obtained.

[0211] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily evaporated and formed into a film.

[0212] Furthermore, since the second layer 162 in the intermediate layer 160 functions as a hole injection layer, the second light-emitting unit 502 does not include a hole injection layer, but the second light-emitting unit 502 may include a hole injection layer.

[0213] The hole transport layers (the first hole transport layer 112_1 and the second hole transport layer 112_2) are formed by including an organic compound having a hole transport property. -6 cm 2 It is preferable that the hole mobility is 1 / Vs or more.

[0214] Examples of the material having hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3-methylphenyl-4,4'-diaminobiphenyl (abbreviation: 3-methylphenyl) ... '-(9-Phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-Phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-Diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-Di(1-naphthyl)-4''-(9-phenyl Compounds with aromatic amine skeletons such as N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di( N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-Bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation :BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"- terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylene-2 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of the compounds include compounds having a thiophene skeleton such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferable because they have good reliability, high hole transportability, and contribute to reducing the driving voltage. Note that the substances exemplified as the materials having hole transport properties used for the composite material of the hole injection layer 111 can also be suitably used as materials constituting the hole transport layer.

[0215] <<Configuration of the light-emitting layer>> The light-emitting layers (light-emitting layer 113, first light-emitting layer 113_1, and second light-emitting layer 113_2) preferably contain a light-emitting substance and a host material. The light-emitting layers may also contain other materials. Alternatively, the light-emitting layers may be stacked with two layers having different compositions.

[0216] The luminescent material may be a fluorescent material, a phosphorescent material, a material exhibiting thermally activated delayed fluorescence (TADF), or any other luminescent material.

[0217] Examples of materials that can be used as the fluorescent substance in the light-emitting layer include the following: In addition, fluorescent substances other than these can also be used.

[0218] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -Diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N'''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), 9,10-bis(2-biphenyl)-2-(N,N',N'-triphenyl-1,4-phenylenediamine-N-yl)anthracene (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyrazol-2-yl)-1,1-diphenylquinacridone (abbreviation: DPQd), DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b ]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, condensed aromatic diamine compounds represented by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole trapping properties and excellent luminous efficiency or reliability.

[0219] When a phosphorescent material is used as the light-emitting material in the light-emitting layer, examples of materials that can be used include the following.

[0220] Organometallic iridium complexes with a 4H-triazole skeleton, such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]), and tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b)3]), organometallic iridium complexes having a 1H-triazole skeleton, such as tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]); organometallic iridium complexes having an imidazole skeleton, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim)3]) and tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]); 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}Iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’] Organometallic iridium complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands, such as iridium(III) acetylacetonate (abbreviated as FIracac), are examples of such compounds that exhibit blue phosphorescence and have a peak emission wavelength in the range of 450 nm to 520 nm.

[0221] In addition, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6- Organometallic iridium complexes having a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]); organometallic iridium complexes having a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]); 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’)iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy In addition to organometallic iridium complexes with a pyridine skeleton such as [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mbfpypy-d3)) and [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy)2(mdppy)), rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]) can be mentioned. These are compounds that mainly exhibit green phosphorescence and have emission peaks in the wavelength range of 500 nm to 600 nm. Note that organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably excellent in reliability and luminous efficiency.

[0222] In addition, organometallic iridium complexes having a pyrimidine skeleton, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]); Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinate)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinate)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’ In addition to organometallic iridium complexes with a pyridine skeleton such as iridium(III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviated as PtOEP), and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviated as [Eu(DBM)3(Phen)]) and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviated as [Eu(TTA)3(Phen)]). These are compounds that exhibit red phosphorescence and have emission peaks in the wavelength range from 600 nm to 700 nm. Furthermore, an organometallic iridium complex having a pyrazine skeleton can emit red light with good chromaticity.

[0223] In addition to the above-mentioned phosphorescent compounds, known phosphorescent compounds may be selected and used.

[0224] TADF materials include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also included are metal-containing porphyrins including magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), palladium (Pd), etc. Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (PtCl2OEP), which are shown in the following structural formulas.

[0225] [ka]

[0226] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), Heterocyclic compounds having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron deficient heteroaromatic ring, the pyridine skeleton, the diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and the triazine skeleton are preferred because they are stable and reliable. In particular, the benzofuropyrimidine skeleton, the benzothienopyrimidine skeleton, the benzofuropyrazine skeleton, and the benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. In addition, among the skeletons having a π-electron rich heteroaromatic ring, the acridine skeleton, the phenoxazine skeleton, the phenothiazine skeleton, the furan skeleton, the thiophene skeleton, and the pyrrole skeleton are preferred because they are stable and reliable.In addition, the furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. In addition, the pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton. In addition, a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded is particularly preferable because the electron donating property of the π-electron-rich heteroaromatic ring and the electron accepting property of the π-electron-deficient heteroaromatic ring are both strong, and the energy difference between the S1 level and the T1 level is small, so that thermally activated delayed fluorescence can be efficiently obtained. In addition, an aromatic ring to which an electron-withdrawing group such as a cyano group is bonded may be used instead of the π-electron-deficient heteroaromatic ring. In addition, an aromatic amine skeleton, a phenazine skeleton, or the like can be used as the π-electron-rich skeleton. In addition, examples of the π-electron-deficient skeleton that can be used include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0227] [ka]

[0228] In addition, a TADF material in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used as the TADF material. Such a TADF material has a short emission lifetime (excitation lifetime), so it is possible to suppress the decrease in efficiency in the high brightness region of a light-emitting device. Specifically, a material with the molecular structure shown below can be used.

[0229] [ka]

[0230] TADF materials are materials that have a small difference between the S1 and T1 levels and have the function of converting triplet excitation energy to singlet excitation energy by reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy by a small amount of thermal energy (reverse intersystem crossing), and singlet excitation states can be generated efficiently. In addition, triplet excitation energy can be converted into light emission.

[0231] In addition, exciplexes (also called exciplexes), which form an excited state with two types of substances, have an extremely small difference between the S1 level and the T1 level and function as TADF materials that can convert triplet excitation energy into singlet excitation energy.

[0232] As an index of the T1 level, a phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) may be used. For a TADF material, when a tangent line is drawn at the base of the short wavelength side of the fluorescence spectrum, and the energy of the wavelength of the extrapolated line is taken as the S1 level, and a tangent line is drawn at the base of the short wavelength side of the phosphorescence spectrum, and the energy of the wavelength of the extrapolated line is taken as the T1 level, the difference between S1 and T1 is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0233] In addition, when a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0234] As the host material of the light-emitting layer, various carrier transporting materials such as a material having an electron transporting property and / or a material having a hole transporting property, or the above-mentioned TADF material can be used.

[0235] As the material having a hole transporting property, the materials exemplified above as the material having a hole transporting property can be used in the same manner.

[0236] As the material having an electron transporting property, the materials exemplified above as the material having an electron transporting property can be used in the same manner.

[0237] As a TADF material that can be used as a host material, the same TADF materials listed above can be used. When a TADF material is used as a host material, the triplet excitation energy generated in the TADF material is converted to singlet excitation energy by reverse intersystem crossing, and the energy is then transferred to the light-emitting material, thereby increasing the light-emitting efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting material functions as an energy acceptor.

[0238] This is very effective when the luminescent material is a fluorescent luminescent material. In this case, in order to obtain high luminous efficiency, the S1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. In addition, the T1 level of the TADF material is preferably higher than the S1 level of the fluorescent luminescent material. Therefore, the T1 level of the TADF material is preferably higher than the T1 level of the fluorescent luminescent material.

[0239] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest energy absorption band of the fluorescent material, because this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient emission.

[0240] In addition, in order to efficiently generate singlet excitation energy from triplet excitation energy by reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. In addition, it is preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. For this purpose, it is preferable that the fluorescent material has a protective group around the luminophore (skeleton causing light emission) of the fluorescent material. As the protective group, a substituent having no π bond is preferable, and a saturated hydrocarbon is preferable, specifically, an alkyl group having 3 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 10 carbon atoms, and a trialkylsilyl group having 3 to 10 carbon atoms are mentioned, and it is more preferable that there are a plurality of protective groups. Since a substituent having no π bond has poor function of transporting carriers, the distance between the TADF material and the luminophore of the fluorescent material can be increased without affecting carrier transport or carrier recombination. Here, the luminophore refers to an atomic group (skeleton) causing light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring. Examples of such luminophore include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent substances having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton are preferred because they have a high fluorescence quantum yield.

[0241] When a fluorescent emitting material is used as the emitting material, a material having an anthracene skeleton is suitable as the host material. When a material having an anthracene skeleton is used as the host material of the fluorescent emitting material, it is possible to realize an emitting layer having both good luminous efficiency and durability. As a material having an anthracene skeleton to be used as the host material, a material having a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferable because it is chemically stable. In addition, when the host material has a carbazole skeleton, it is preferable because the injection and transport properties of holes are improved, but when the host material contains a benzocarbazole skeleton in which a benzene ring is further condensed to the carbazole skeleton, the HOMO level is about 0.1 eV shallower than that of the carbazole skeleton, making it easier for holes to enter, which is more preferable. In particular, when the host material contains a dibenzocarbazole skeleton, it is preferable because the HOMO level is about 0.1 eV shallower than that of a host material having a carbazole skeleton, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). From the viewpoint of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4- 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,β-ADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzyl Benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they show very good properties.

[0242] The host material may be a mixture of a plurality of substances, and when a mixture of host materials is used, it is preferable to mix a material having an electron transporting property with a material having a hole transporting property. By mixing a material having an electron transporting property with a material having a hole transporting property, the transporting property of the light-emitting layer 113 can be easily adjusted, and the recombination region can be easily controlled. The weight ratio of the content of the material having a hole transporting property to the material having an electron transporting property may be 1:19 to 19:1 (material having a hole transporting property:material having an electron transporting property).

[0243] A phosphorescent material can be used as a part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0244] In addition, these mixed materials may form an exciplex. It is preferable to select a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest energy absorption band of the light-emitting material, because this makes energy transfer smooth and allows efficient light emission. In addition, the use of this structure is preferable because the driving voltage is reduced.

[0245] At least one of the materials forming the exciplex may be a phosphorescent material, which allows the triplet excitation energy to be efficiently converted into singlet excitation energy by reverse intersystem crossing.

[0246] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. It is also preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. The LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0247] The formation of an exciplex can be confirmed, for example, by comparing the emission spectrum of a material having hole transport properties, the emission spectrum of a material having electron transport properties, and the emission spectrum of a mixed film obtained by mixing these materials, and observing the phenomenon that the emission spectrum of the mixed film shifts to a longer wavelength than the emission spectrum of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of an exciplex can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and the transient PL of a mixed film obtained by mixing these materials, and observing the difference in transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component than the transient PL lifetime of each material, or the proportion of delayed components becoming larger. The above-mentioned transient PL may also be read as transient electroluminescence (EL). That is, the formation of an exciplex can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and the transient EL of a mixed film obtained by mixing these materials, and observing the difference in transient response.

[0248] <Configuration of Electron Transport Layer> The electron transport layer (the electron transport layer 114, the first electron transport layer 114_1, and the second electron transport layer 114_2) is a layer containing a substance having an electron transport property. The substance having an electron transport property is a layer containing a substance having an electron mobility of 1×10 -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 A substance having an electron mobility of 100 / Vs or more is preferable. Note that, other substances can be used as long as they have a higher transportability of electrons than holes. Note that, as the organic compound, an organic compound having a π-electron-deficient heteroaromatic ring is preferable. As the organic compound having a π-electron-deficient heteroaromatic ring, for example, it is preferable to use one or more of an organic compound having a heteroaromatic ring with an azole skeleton, an organic compound having a heteroaromatic ring with a pyridine skeleton, an organic compound having a heteroaromatic ring with a diazine skeleton, and an organic compound having a heteroaromatic ring with a triazine skeleton.

[0249] The organic compound according to one embodiment of the present invention described in Embodiment 1 can be used for the electron-transport layer. In addition, organic compounds that can be used as the organic compound having an electron-transport property for the first layer in the intermediate layer 160 can be used in the same manner. Among them, organic compounds including a heteroaromatic ring having a diazine skeleton, an organic compound including a heteroaromatic ring having a pyridine skeleton, and an organic compound including a heteroaromatic ring having a triazine skeleton are preferable because of their high reliability. In particular, organic compounds including a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound including a heteroaromatic ring having a triazine skeleton have high electron-transport properties and contribute to a reduction in driving voltage.

[0250] In addition, the electron mobility of the electron transport layer at a square root of the electric field strength [V / cm] of 600 is 1×10 -7 cm 2 / Vs or more 5×10 -5 cm 2 / Vs or less. By lowering the electron transportability in the electron transport layer, the amount of electrons injected into the light-emitting layer can be controlled, and the light-emitting layer can be prevented from becoming in an electron excess state. This configuration is particularly preferable when the hole injection layer is formed of a composite material, and the HOMO level of the material having hole transportability in the composite material is a substance having a relatively deep HOMO level of -5.7 eV or more and -5.4 eV or less, because the lifetime is good. In this case, the material having electron transportability preferably has a HOMO level of -6.0 eV or more.

[0251] <Configuration of the electron injection layer> The electron injection layer 115 may be a layer containing an alkali metal, an alkaline earth metal, a rare earth metal, or a compound or complex thereof, such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-quinolinolato-lithium (abbreviation: Liq), or ytterbium (Yb). The electron injection layer 115 may be a layer made of a substance having electron transport properties containing an alkali metal, an alkaline earth metal, or a compound thereof, or an electride. Examples of the electride include a substance in which electrons are added at a high concentration to a mixed oxide of calcium and aluminum.

[0252] Note that a layer containing a fluoride of the alkali metal or alkaline earth metal in a substance having an electron transporting property (preferably an organic compound having a bipyridine skeleton) at a concentration at which the fluoride is in a microcrystalline state or higher (50 wt % or higher) can be used as the electron injection layer 115. Since this layer has a low refractive index, it is possible to provide a light-emitting device with better external quantum efficiency.

[0253] The organic compound of one embodiment of the present invention described in Embodiment 1 can be used for the electron-injection layer 115. The structure of the first layer using the organic compound of one embodiment of the present invention described in Embodiment 2 can be used for the electron-injection layer 115.

[0254] Configuration of the second electrode The second electrode 102 is an electrode including a cathode. The second electrode 102 may have a laminated structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. As a material for forming the cathode, a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a small work function (specifically, 3.8 eV or less) can be used. Specific examples of such a cathode material include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys containing these (MgAg, AlLi), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing these, and the like. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide can be used as the cathode regardless of the magnitude of the work function.

[0255] When the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be obtained.

[0256] These conductive materials can be formed into a film by a dry method such as a vacuum deposition method or a sputtering method, an inkjet method, a spin coating method, etc. Also, they may be formed by a wet method using a sol-gel method, or may be formed by a wet method using a paste of a metal material.

[0257] In addition, various methods can be used for forming the organic compound layer 103, regardless of whether it is a dry method or a wet method. For example, a vacuum deposition method, a gravure printing method, an offset printing method, a screen printing method, an inkjet method, a spin coating method, or the like may be used.

[0258] Moreover, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0259] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate.

[0260] (Embodiment 4) 3A and 3B, a display device can be formed by forming a plurality of light-emitting devices 130 over an insulating layer 175. In this embodiment, a display device according to one embodiment of the present invention will be described in detail.

[0261] The display device 100 includes a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0262] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as subpixels 110. When describing matters common to other components distinguished by alphabets, they may be described using symbols without the alphabets.

[0263] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel section 177. In the present embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may be used. The number of sub-pixels is not limited to three, and may be four or more. Examples of the four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), sub-pixels of four colors, R, G, B, and yellow (Y), and sub-pixels of R, G, B, and infrared (IR).

[0264] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0265] 3A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may be arranged side by side in the Y direction, and subpixels of the same color may be arranged side by side in the X direction.

[0266] A connection portion 140 and a region 141 may be provided outside the pixel portion 177. The region 141 is provided between the pixel portion 177 and the connection portion 140. The region 141 is provided with an organic compound layer 103. In addition, the connection portion 140 is provided with a conductive layer 151C.

[0267] 3A shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0268] Fig. 3(B) is an example of a cross-sectional view between dashed line A1-A2 in Fig. 3(A). As shown in Fig. 3(B), the display device 100 has an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). An opening reaching the conductive layer 172 is provided in the insulating layer 175, the insulating layer 174, and the insulating layer 173, and a plug 176 is provided to fill the opening.

[0269] In the pixel section 177, the light emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided so as to cover the light emitting device 130. The substrate 120 is bonded onto the protective layer 131 by a resin layer 122. In addition, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are preferably provided between adjacent light emitting devices 130.

[0270] 3B shows multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected to one another when the display device 100 is viewed from above. In other words, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are insulating layers having openings over the first electrodes.

[0271] In FIG. 3B, the light emitting device 130 includes a light emitting device 130R, a light emitting device 130G, and a light emitting device 130B. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B emit light of different colors. For example, the light emitting device 130R can emit red light, the light emitting device 130G can emit green light, and the light emitting device 130B can emit blue light. The light emitting device 130R, the light emitting device 130G, or the light emitting device 130B may emit other visible light or infrared light.

[0272] The display device of one embodiment of the present invention can be, for example, a top emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed. Note that the display device of one embodiment of the present invention may be a bottom emission type.

[0273] Examples of the light-emitting material contained in the light-emitting device 130 include organic compounds or organometallic complexes such as fluorescent materials, phosphorescent materials, and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF materials). The light-emitting material may also be an inorganic compound such as quantum dots.

[0274] The light-emitting device 130R has a configuration as shown in the second and third embodiments. It has a first electrode (pixel electrode) consisting of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103R during processing. When the common layer 104 is provided, it is preferable that the common layer 104 is an electron injection layer. When the common layer 104 is provided, the laminated structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in the second and third embodiments.

[0275] The light-emitting device 130G has a configuration as shown in the second and third embodiments. It has a first electrode (pixel electrode) consisting of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103G during processing. When the common layer 104 is provided, it is preferable that the common layer 104 is an electron injection layer. When the common layer 104 is provided, the laminated structure of the organic compound layer 103G and the common layer 104 corresponds to the organic compound layer 103 in the second and third embodiments.

[0276] The light-emitting device 130B has a configuration as shown in the second and third embodiments. It has a first electrode (pixel electrode) consisting of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103B during processing. When the common layer 104 is provided, it is preferable that the common layer 104 is an electron injection layer. When the common layer 104 is provided, the laminated structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in the second and third embodiments.

[0277] One of the pixel electrode and the common electrode of the light-emitting device functions as an anode and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0278] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent in the form of islands, either individually or for each luminescent color. By providing the organic compound layer 103 in the form of islands for each light-emitting device 130, it is possible to suppress leakage current between adjacent light-emitting devices 130 even in a high-definition display device. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. In particular, it is possible to realize a display device with high current efficiency at low luminance.

[0279] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film by using a lithography method.

[0280] In the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in the example shown in FIG. 3B, the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the display device 100 is a top-emission type and the pixel electrode of the light-emitting device 130 functions as an anode, it is preferable that the conductive layer 151 has a high reflectance to visible light, and the conductive layer 152 has a transparency to visible light and a high work function. When the display device 100 is a top-emission type, the higher the reflectance of the pixel electrode to visible light, the higher the extraction efficiency of light emitted from the organic compound layer 103 can be. When the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. As described above, by forming the pixel electrode of the light-emitting device 130 into a laminated structure of the conductive layer 151 having a high reflectance for visible light and the conductive layer 152 having a large work function, the light-emitting device 130 can be made into a light-emitting device with high light extraction efficiency and low driving voltage.

[0281] When the conductive layer 151 is a layer having high reflectance to visible light, the reflectance of the conductive layer 151 to visible light is, for example, preferably 40% to 100%, and more preferably 70% to 100%. When the conductive layer 152 is an electrode having transparency to visible light, the transmittance of the conductive layer 152 to visible light is preferably, for example, 40% or more.

[0282] Here, when the pixel electrode has a laminated structure consisting of multiple layers, the pixel electrode may be altered due to, for example, a reaction between the multiple layers. For example, when a film formed after the formation of the pixel electrode is removed by a wet etching method, galvanic corrosion may occur due to a chemical solution coming into contact with the pixel electrode.

[0283] Therefore, in the display device 100 of the present embodiment, the conductive layer 152 is formed so as to cover the upper surface and the side surface of the conductive layer 151. This makes it possible to prevent a chemical solution from coming into contact with the conductive layer 151 even when, for example, a film formed after forming a pixel electrode having the conductive layer 151 and the conductive layer 152 is removed by a wet etching method. This makes it possible to prevent, for example, galvanic corrosion from occurring in the pixel electrode. Thus, the display device 100 can be manufactured by a method with a high yield rate, and therefore can be a low-cost display device. Furthermore, since the occurrence of defects in the display device 100 can be prevented, the display device 100 can be a highly reliable display device.

[0284] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys containing appropriate combinations of these metals can also be used.

[0285] The conductive layer 152 can be made of an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0286] The conductive layer 151 may have a stacked structure of multiple layers having different materials, and the conductive layer 152 may have a stacked structure of multiple layers having different materials. In this case, the conductive layer 151 may have a layer using a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may have a layer using a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer using a material that can be used for the conductive layer 152.

[0287] Note that an end portion of the conductive layer 151 preferably has a tapered shape. Specifically, an end portion of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By making the side surface of the conductive layer 152 tapered, the coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0288] 4A shows a case where the conductive layer 151 has a stacked structure of multiple layers containing different materials. As shown in FIG. 4A, the conductive layer 151 has a structure including a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, the conductive layer 151 shown in FIG. 4A has a three-layer stacked structure. In this way, when the conductive layer 151 has a stacked structure of multiple layers, the reflectance of at least one of the layers constituting the conductive layer 151 to visible light may be made higher than the reflectance of the conductive layer 152 to visible light.

[0289] 4A, the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c. The conductive layer 151a and the conductive layer 151c are preferably made of a material that is less likely to change in quality than the conductive layer 151b. For example, the conductive layer 151a can be made of a material that is less likely to cause migration due to contact with the insulating layer 175 than the conductive layer 151b. The conductive layer 151c can be made of a material that is less likely to oxidize than the conductive layer 151b and has an oxide with a lower electrical resistivity than the oxide of the material used for the conductive layer 151b.

[0290] As described above, by sandwiching the conductive layer 151b between the conductive layer 151a and the conductive layer 151c, the range of material selection for the conductive layer 151b can be expanded. As a result, for example, the conductive layer 151b can be a layer having a higher reflectance to visible light than at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used as the conductive layer 151b. Note that an alloy containing aluminum may be used for the conductive layer 151b. Furthermore, titanium, which is a material that has a lower reflectance to visible light than aluminum but is less likely to cause migration than aluminum even when in contact with the insulating layer 175, can be used as the conductive layer 151a. Furthermore, titanium, which is a material that has a lower reflectance to visible light than aluminum but is less likely to oxidize than aluminum and has an oxide electrical resistivity lower than that of aluminum oxide, can be used as the conductive layer 151c.

[0291] Also, silver or an alloy containing silver may be used as the conductive layer 151c. Silver has a characteristic that the reflectance to visible light is higher than that of titanium. Furthermore, silver has a characteristic that it is less likely to oxidize than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide. As described above, when silver or an alloy containing silver is used as the conductive layer 151c, the reflectance to visible light of the conductive layer 151 can be suitably increased, while the increase in the electrical resistance of the pixel electrode due to the oxidation of the conductive layer 151b can be suppressed. Here, as the alloy containing silver, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also written as APC) can be applied. Note that, when silver or an alloy containing silver is used as the conductive layer 151c and aluminum is used as the conductive layer 151b, the reflectance to visible light of the conductive layer 151c can be made higher than the reflectance to visible light of the conductive layer 151b. Here, silver or an alloy containing silver may be used as the conductive layer 151b. Alternatively, the conductive layer 151a may be made of silver or an alloy containing silver.

[0292] On the other hand, a film using titanium has better processability by etching than a film using silver. Therefore, by using titanium for the conductive layer 151c, the conductive layer 151c can be easily formed. Note that a film using aluminum also has better processability by etching than a film using silver.

[0293] As described above, the conductive layer 151 has a stacked structure of a plurality of layers, whereby the characteristics of the display device can be improved. For example, the display device 100 can have high light extraction efficiency and high reliability.

[0294] Here, when a microcavity structure is applied to the light-emitting device 130, the light extraction efficiency of the display device 100 can be suitably improved by using silver or an alloy containing silver, which is a material with high reflectivity for visible light, as the conductive layer 151c.

[0295] As described above, the side surface of the conductive layer 151 preferably has a tapered shape. Specifically, the side surface of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. For example, in the conductive layer 151 having the structure shown in FIG 4A, at least one of the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c preferably has a tapered shape.

[0296] The conductive layer 151 shown in FIG. 4A can be formed by a lithography method. Specifically, first, a conductive film to be the conductive layer 151a, a conductive film to be the conductive layer 151b, and a conductive film to be the conductive layer 151c are formed in this order. Next, a resist mask is formed on the conductive film to be the conductive layer 151c. Then, the conductive film in a region that does not overlap with the resist mask is removed by, for example, an etching method. Here, compared to the case where the conductive layer 151 is formed so that the side surface does not have a tapered shape, that is, so that the side surface is vertical, the conductive film is processed under conditions that make it easy for the resist mask to recede (shrink), so that the side surface of the conductive layer 151 can be tapered.

[0297] Here, if the conductive film is processed under conditions that make it easy for the resist mask to recede (shrink), the conductive film may be easily processed in the horizontal direction, which may result in higher isotropy of etching than when the conductive layer 151 is formed so that the side surfaces are vertical.

[0298] Furthermore, when the conductive layer 151 has a laminated structure of multiple layers made of different materials, the layers may differ in ease of being processed in the horizontal direction. For example, the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c may differ in ease of being processed in the horizontal direction.

[0299] 4A, after the conductive film is processed, the side surface of the conductive layer 151b may be located inside the side surfaces of the conductive layers 151a and 151c, forming a protruding portion, which may reduce the coverage of the conductive layer 152 with respect to the conductive layer 151, and may cause a step discontinuity in the conductive layer 152.

[0300] Therefore, it is preferable to provide an insulating layer 156 as shown in Fig. 4A. Fig. 4A shows an example in which the insulating layer 156 is provided over the conductive layer 151a so as to have a region overlapping with a side surface of the conductive layer 151b. This can prevent the conductive layer 152 from being broken or thinned due to the protrusion, thereby preventing poor connection or an increase in driving voltage.

[0301] 4A illustrates a structure in which the side surfaces of the conductive layer 151b are entirely covered with the insulating layer 156, but the side surfaces of the conductive layer 151b may not be partially covered with the insulating layer 156. Similarly, in pixel electrodes having structures to be described later, the side surfaces of the conductive layer 151b may not be partially covered with the insulating layer 156.

[0302] When the conductive layer 151 has the structure shown in FIG. 4A, the conductive layer 152 is provided to cover the conductive layer 151a, the conductive layer 151b, the conductive layer 151c, and the insulating layer 156 and to be electrically connected to the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. This prevents a chemical solution from contacting any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c even when a film formed after the conductive layer 152 is formed is removed by a wet etching method. Thus, corrosion can be suppressed in any of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c. Thus, the display device 100 can be manufactured by a method with a high yield. Furthermore, the occurrence of defects is suppressed, and the display device 100 can be a highly reliable display device.

[0303] Here, as shown in FIG. 4(A), it is preferable that the insulating layer 156 has a curved surface. This can suppress the occurrence of step discontinuities in the conductive layer 152 covering the insulating layer 156, for example, compared to when the side surface of the insulating layer 156 is vertical (parallel to the Z direction). Furthermore, even when the insulating layer 156 has a tapered shape on the side surface, specifically a tapered shape with a taper angle of less than 90°, it can suppress the occurrence of step discontinuities in the conductive layer 152 covering the insulating layer 156, for example, compared to when the side surface of the insulating layer 156 is vertical. As a result, the display device 100 can be manufactured by a method with a high yield rate. Furthermore, the occurrence of defects can be suppressed, and the display device 100 can be a highly reliable display device.

[0304] 4A shows a structure in which the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c; however, this is not limited to this embodiment of the present invention. For example, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151a. Alternatively, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151c.

[0305] 4(B) to 4(D) show other structures of the first electrode 101. Fig. 4(B) shows a structure in which the insulating layer 156 covers not only the side surface of the conductive layer 151b but also the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c in the first electrode 101 of Fig. 4(A).

[0306] FIG. 4C shows a structure in which the insulating layer 156 is not provided in the first electrode 101 of FIG. 4A.

[0307] FIG. 4D shows a structure in which the conductive layer 151 does not have a layered structure and the conductive layer 152 has a layered structure in the first electrode 101 in FIG. 4A.

[0308] The conductive layer 152a has higher adhesion to the conductive layer 152b than the insulating layer 175, for example. For the conductive layer 152a, an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon can be preferably used. As described above, peeling of the conductive layer 152b can be suppressed. In addition, the conductive layer 152b can be configured not to be in contact with the insulating layer 175.

[0309] The conductive layer 152b is a layer having a higher reflectance to visible light (for example, reflectance to light having a predetermined wavelength in the range of 400 nm to less than 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The reflectance of the conductive layer 152b to visible light can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. In addition, for example, a material having a higher reflectance to visible light than aluminum can be used for the conductive layer 152b. Specifically, for example, silver or an alloy containing silver can be used for the conductive layer 152b. For example, an alloy containing silver can be an alloy of silver, palladium, and copper (APC). As described above, the display device 100 can be a display device having high light extraction efficiency. Note that a metal other than silver may be used for the conductive layer 152b.

[0310] When the conductive layer 151 and the conductive layer 152 function as an anode, the conductive layer 152c is preferably a layer having a high work function. The conductive layer 152c is, for example, a layer having a higher work function than the conductive layer 152b. The conductive layer 152c can be formed using, for example, a material similar to that used for the conductive layer 152a. For example, the conductive layer 152a and the conductive layer 152c can be formed using the same type of material. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0311] Note that in the case where the conductive layer 151 and the conductive layer 152 function as a cathode, the conductive layer 152c preferably has a small work function, for example, a layer having a smaller work function than the conductive layer 152b.

[0312] In addition, the conductive layer 152c is preferably a layer having a high transmittance for visible light (for example, transmittance for light having a predetermined wavelength in the range of 400 nm to less than 750 nm). For example, the transmittance for visible light of the conductive layer 152c is preferably higher than the transmittance for visible light of the conductive layer 151 and the conductive layer 152b. For example, the transmittance for visible light of the conductive layer 152c can be 60% to 100%, preferably 70% to 100%, and more preferably 80% to 100%. As a result, the amount of light absorbed by the conductive layer 152c out of the light emitted by the organic compound layer 103 can be reduced. In addition, as described above, the conductive layer 152b under the conductive layer 152c can be a layer having a high reflectance for visible light. Therefore, the display device 100 can be a display device having high light extraction efficiency.

[0313] 3A will be described with reference to FIGS. 8 to 13. In the light-emitting device of the display device 100, an organic compound layer is formed by a manufacturing process including a treatment using water. By using the organic compound of one embodiment of the present invention for the organic compound layer of the light-emitting device of the display device of one embodiment of the present invention, problems such as dissolution of the layer including the organic compound and penetration of a chemical solution into the layer including the organic compound can be prevented even in the case of manufacturing the light-emitting device by a manufacturing method including a treatment using water, and a light-emitting device with excellent characteristics can be provided.

[0314] [Example of manufacturing method] The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, a pulsed laser deposition (PLD) method, an ALD method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. Also, one of the thermal CVD methods is a metal organic chemical vapor deposition (MOCVD) method.

[0315] Furthermore, the thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0316] In particular, for the production of light-emitting devices, vacuum processes such as deposition methods and solution processes such as spin coating and inkjet methods can be used. Examples of deposition methods include physical deposition methods (PVD methods) such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical deposition methods (CVD methods). In particular, functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) included in the organic compound layer can be formed by deposition methods (vacuum deposition methods, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet methods, screen (screen printing) methods, offset (lithographic printing) methods, flexo (letterpress printing) methods, gravure methods, microcontact methods, etc.), etc.

[0317] Furthermore, when processing the thin film constituting the display device, it can be processed using, for example, a lithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0318] As the lithography method, for example, a photolithography method can be used. There are two typical photolithography methods. One is a method in which a resist mask is formed on a thin film to be processed, the thin film is processed by, for example, etching, and the resist mask is removed. The other is a method in which a photosensitive thin film is formed, and then exposed and developed to process the thin film into a desired shape.

[0319] In the photolithography method, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. In addition, ultraviolet light, KrF laser light, ArF laser light, or the like may be used. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferable because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0320] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0321] 5(A), an insulating layer 171 is formed on a substrate (not shown). Then, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layer 172 and the conductive layer 179. Then, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0322] The substrate may be a substrate having at least a heat resistance sufficient to withstand a subsequent heat treatment. When an insulating substrate is used, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate, made of silicon or silicon carbide, or the like may be used.

[0323] 5A, an opening reaching the conductive layer 172 is formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Then, a plug 176 is formed to fill the opening.

[0324] 5A, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, a sputtering method or a vacuum deposition method. The conductive film 151f can be made of, for example, a metal material.

[0325] 5A, a resist mask 191 is formed over the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0326] 5B, the conductive film 151f in a region that does not overlap with the resist mask 191 is removed by, for example, an etching method, specifically, a dry etching method. When the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by a wet etching method. As a result, the conductive layer 151 is formed. When a part of the conductive film 151f is removed by a dry etching method, for example, a recess may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0327] 5(C), the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0328] 5(D), an insulating film 156f, which will later become the insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layers 151R, 151G, 151B, and 151C, and on the insulating layer 175. The insulating film 156f can be formed by, for example, a CVD method, an ALD method, a sputtering method, or a vacuum deposition method.

[0329] The insulating film 156f can be made of an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating film 156f. For example, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film containing silicon can be used for the insulating film 156f. For example, silicon oxynitride can be used for the insulating film 156f.

[0330] 5(E), the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, the insulating layer 156 can be formed by uniformly etching the upper surface of the insulating film 156f. Such uniform etching and planarization is also called an etch-back process. The insulating layer 156 may be formed by using a lithography method.

[0331] 6A, a conductive film 152f to be the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175. Specifically, the conductive film 152f is formed so as to cover, for example, the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C.

[0332] The conductive film 152f can be formed by, for example, a sputtering method or a vacuum evaporation method. The conductive film 152f can be formed using, for example, a conductive oxide. Alternatively, the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide on the metal material. For example, the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the metal material.

[0333] The conductive film 152f can be formed by an ALD method. In this case, an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used as the conductive film 152f. In this case, the conductive film 152f can be formed by repeating one cycle of introducing a precursor (generally, sometimes called a precursor or a metal precursor), purging the precursor, introducing an oxidizing agent (generally, sometimes called a reactant, a reactant, a non-metal precursor, etc.). Here, when an oxide film containing a plurality of kinds of metals such as indium tin oxide is formed as the conductive film 152f, the composition of the metals can be controlled by changing the number of cycles for each type of precursor.

[0334] For example, when forming an indium tin oxide film as the conductive film 152f, a precursor containing indium is introduced, the precursor is purged, an oxidizing agent is introduced to form an In-O film, and then a precursor containing tin is introduced, the precursor is purged, and an oxidizing agent is introduced to form an Sn-O film. Here, by making the number of cycles for forming the In-O film greater than the number of cycles for forming the Sn-O film, the number of In atoms contained in the conductive film 152f can be made greater than the number of Sn atoms.

[0335] Also, for example, when a zinc oxide film is formed as the conductive film 152f, a Zn-O film is formed in the above-mentioned procedure. Also, for example, when an aluminum zinc oxide film is formed as the conductive film 152f, a Zn-O film and an Al-O film are formed in the above-mentioned procedure. Also, for example, when a titanium oxide film is formed as the conductive film 152f, a Ti-O film is formed in the above-mentioned procedure. Also, for example, when an indium tin oxide film containing silicon is formed as the conductive film 152f, an In-O film, an Sn-O film, and an Si-O film are formed in the above-mentioned procedure. Also, for example, when a zinc oxide film containing gallium is formed, a Ga-O film and a Zn-O film are formed in the above-mentioned procedure.

[0336] As the precursor containing indium, for example, triethylindium, trimethylindium, or [1,1,1-trimethyl-N-(trimethylsilyl)amido]-indium can be used. As the precursor containing tin, for example, tin chloride, or tetrakis(dimethylamido)tin can be used. As the precursor containing zinc, for example, diethylzinc, or dimethylzinc can be used. As the precursor containing gallium, for example, triethylgallium can be used. As the precursor containing titanium, for example, titanium chloride, tetrakis(dimethylamido)titanium, or tetraisopropyl titanate can be used. As the precursor containing aluminum, for example, aluminum chloride, or trimethylaluminum can be used. As the precursor containing silicon, for example, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane, or bis(ethylmethylamino)silane can be used. In addition, as the oxidizing agent, water vapor, oxygen plasma, or ozone gas can be used.

[0337] 6B, the conductive film 152f is processed by, for example, lithography to form the conductive layers 152R, 152G, 152B, and 152C. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. Note that the conductive film 152f may also be removed by dry etching. In this manner, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0338] Subsequently, it is preferable to perform hydrophobization treatment on the conductive layer 152. The hydrophobization treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobization treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be increased, and film peeling can be suppressed. Note that the hydrophobization treatment is not necessarily performed.

[0339] 6C, an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Then, as shown in FIG.

[0340] As shown in Fig. 6(C), the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask, to distinguish it from a fine metal mask), the organic compound film 103Rf can be formed only in a desired area. By employing a film formation process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured by a relatively simple process.

[0341] The organic compound film 103Rf can be formed by, for example, a vapor deposition method, specifically a vacuum vapor deposition method. Alternatively, the organic compound film 103Rf may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0342] 6(C), a sacrificial film 158Rf which will later become the sacrificial layer 158R, and a mask film 159Rf which will later become the mask layer 159R are sequentially formed on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175. In this specification and the like, the mask layer may be referred to as a sacrificial layer.

[0343] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of the sacrificial film 158Rf and the mask film 159Rf, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0344] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0345] The sacrificial film 158Rf is made of a film having high resistance to the processing conditions of the organic compound film 103Rf, specifically, a film having a high etching selectivity with respect to the organic compound film 103Rf. The mask film 159Rf is made of a film having a high etching selectivity with respect to the sacrificial film 158Rf.

[0346] The sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the mask film 159Rf is typically 200° C. or less, preferably 150° C. or less, more preferably 120° C. or less, more preferably 100° C. or less, and further preferably 80° C. or less.

[0347] The sacrificial film 158Rf and the mask film 159Rf are preferably made of a film that can be removed by a wet etching method. By using the wet etching method, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using the dry etching method.

[0348] The sacrificial film 158Rf and the mask film 159Rf may be formed by, for example, a sputtering method, an ALD method (thermal ALD method, PEALD method), a CVD method, or a vacuum deposition method. Alternatively, the sacrificial film 158Rf and the mask film 159Rf may be formed by using the above-mentioned wet film formation method.

[0349] In addition, the sacrificial film 158Rf formed on and in contact with the organic compound film 103Rf is preferably formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, it is preferable to form the sacrificial film 158Rf using the ALD method or the vacuum deposition method rather than the sputtering method.

[0350] The sacrificial film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film, for example.

[0351] The sacrificial film 158Rf and the mask film 159Rf may be made of, for example, a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing the metal material. In particular, it is preferable to use a low melting point material such as aluminum or silver. By using a metal material capable of blocking ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf, irradiation of ultraviolet rays to the organic compound film 103Rf can be suppressed, and deterioration of the organic compound film 103Rf can be suppressed, which is preferable.

[0352] Furthermore, for the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used.

[0353] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0354] In addition, it is preferable to use a film containing a material having light-shielding properties against light, particularly ultraviolet light, as the sacrificial film and the mask film. As the material having light-shielding properties, various materials such as metals, insulators, semiconductors, and semimetals having light-shielding properties against ultraviolet light can be used, but since a part or all of the sacrificial film and the mask film are to be removed in a later process, it is preferable that the film be a film that can be processed by etching, and it is particularly preferable that the processability is good.

[0355] For the sacrificial film and the mask film, it is preferable to use a semiconductor material such as silicon or germanium, because it has a high affinity with the semiconductor manufacturing process. Alternatively, an oxide or nitride of the above semiconductor material can be used. Alternatively, a nonmetallic material such as carbon, or a compound thereof can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, aluminum, or alloys containing one or more of these can be used. Alternatively, an oxide containing the above metals, such as titanium oxide or chromium oxide, or a nitride such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0356] By using a film containing a material having a light-shielding property against ultraviolet rays for the sacrificial film and the mask film, it is possible to suppress irradiation of ultraviolet rays to the organic compound layer in, for example, an exposure process, and by suppressing damage to the organic compound layer caused by ultraviolet rays, it is possible to improve the reliability of the light-emitting device.

[0357] The same effect can be obtained when a film containing a material having a light blocking property against ultraviolet rays is used as the material of the inorganic insulating film 125f described later.

[0358] Moreover, various inorganic insulating films can be used for the sacrificial film 158Rf and the mask film 159Rf. In particular, oxide insulating films are preferable because they have higher adhesion to the organic compound film 103Rf than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf. For example, an aluminum oxide film can be formed as the sacrificial film 158Rf and the mask film 159Rf by using the ALD method. The ALD method is preferable because it can reduce damage to the underlayer (particularly the organic compound layer).

[0359] For example, the sacrificial film 158Rf may be an inorganic insulating film (e.g., an aluminum oxide film) formed using an ALD method, and the mask film 159Rf may be an inorganic film (e.g., an In-Ga-Zn oxide film, an aluminum film, or a tungsten film) formed using a sputtering method.

[0360] The same inorganic insulating film can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125 to be formed later. For example, an aluminum oxide film formed by the ALD method can be used for both the sacrificial film 158Rf and the inorganic insulating layer 125. Here, the same film-forming conditions may be applied to the sacrificial film 158Rf and the inorganic insulating layer 125, or different film-forming conditions may be applied to each of them. For example, by forming the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the sacrificial film 158Rf is a layer that is removed in most or all in a later process, it is preferable that it is easy to process. For this reason, it is preferable that the sacrificial film 158Rf is formed under conditions in which the substrate temperature during film formation is lower than that of the inorganic insulating layer 125.

[0361] An organic material may be used for one or both of the sacrificial film 158Rf and the mask film 159Rf. For example, a material that can be dissolved in a chemically stable solvent may be used as the organic material for at least the film located at the top of the organic compound film 103Rf. In particular, a material that can be dissolved in water or alcohol can be preferably used. When forming a film of such a material, it is preferable to apply the material by a wet film forming method in a state where the material is dissolved in a solvent such as water or alcohol, and then perform a heat treatment to evaporate the solvent. At this time, by performing the heat treatment under a reduced pressure atmosphere, the solvent can be removed at a low temperature in a short time, which is preferable because it reduces thermal damage to the organic compound film 103Rf.

[0362] The sacrificial film 158Rf and the mask film 159Rf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0363] For example, the sacrificial film 158Rf may be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 159Rf may be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0364] 6(C), a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0365] The resist mask 190R may be made of either a positive resist material or a negative resist material.

[0366] The resist mask 190R is provided at a position overlapping with the conductive layer 152R. The resist mask 190R is preferably provided also at a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device. Note that the resist mask 190R does not necessarily have to be provided on the conductive layer 152C. Furthermore, the resist mask 190R is preferably provided so as to cover from an end of the organic compound film 103Rf to an end of the conductive layer 152C (an end on the organic compound film 103Rf side) as shown in the cross-sectional view between B1 and B2 in FIG. 6C.

[0367] 6(D), a resist mask 190R is used to remove a portion of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The mask layer 159R is used as a mask (also called a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0368] The sacrificial film 158Rf and the mask film 159Rf can be processed by a wet etching method or a dry etching method, respectively. The sacrificial film 158Rf and the mask film 159Rf are preferably processed by an isotropic etching method.

[0369] By using the wet etching method, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using the dry etching method. When using the wet etching method, it is preferable to use a chemical solution using, for example, a developer, a tetramethylammonium hydroxide solution (TMAH), dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these.

[0370] In processing the mask film 159Rf, the organic compound film 103Rf is not exposed, so the range of processing methods to be selected is wider than in processing the sacrificial film 158Rf. Specifically, even if a gas containing oxygen is used as an etching gas in processing the mask film 159Rf, deterioration of the organic compound film 103Rf can be further suppressed.

[0371] In addition, when a dry etching method is used in processing the sacrificial film 158Rf, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as an etching gas. When a dry etching method is used, it is preferable to use a gas containing a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He as an etching gas.

[0372] For example, when an aluminum oxide film formed by the ALD method is used as the sacrificial film 158Rf, a part of the sacrificial film 158Rf can be removed by a dry etching method using CHF3 and He, or CHF3, He and CH4. When an In-Ga-Zn oxide film formed by the sputtering method is used as the mask film 159Rf, a part of the mask film 159Rf can be removed by a wet etching method using diluted phosphoric acid. Alternatively, a part of the mask film 159Rf may be removed by a dry etching method using CH4 and Ar. Alternatively, a part of the mask film 159Rf can be removed by a wet etching method using diluted phosphoric acid. When a tungsten film formed by the sputtering method is used as the mask film 159Rf, a part of the mask film 159Rf can be removed by a dry etching method using SF6, CF4 and O2, or CF4, Cl2 and O2.

[0373] The resist mask 190R can be removed by the same method as the resist mask 191. For example, it can be removed by ashing using oxygen plasma. Alternatively, oxygen gas and a Group 18 element such as CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or He may be used. Alternatively, the resist mask 190R may be removed by wet etching. At this time, since the sacrificial film 158Rf is located on the outermost surface and the organic compound film 103Rf is not exposed, damage to the organic compound film 103Rf can be suppressed in the process of removing the resist mask 190R. In addition, the range of selection of the method for removing the resist mask 190R can be expanded.

[0374] 6(D), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a part of the organic compound film 103Rf to form the organic compound layer 103R.

[0375] 6D, a laminated structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. Also, the conductive layer 152G and the conductive layer 152B are exposed.

[0376] 6D shows an example in which the edge of the organic compound layer 103R is located outside the edge of the conductive layer 152R. With this structure, the aperture ratio of the pixel can be increased. Although not shown in FIG. 6D, the etching process may form a recess in a region of the insulating layer 175 that does not overlap with the organic compound layer 103R.

[0377] In addition, the organic compound layer 103R covers the upper surface and side surface of the conductive layer 152R, so that the subsequent steps can be performed without exposing the conductive layer 152R. If the end of the conductive layer 152R is exposed, corrosion may occur, for example, in an etching step. The product generated by the corrosion of the conductive layer 152R may be unstable, and may dissolve in a solution in the case of wet etching, or may scatter into the atmosphere in the case of dry etching. When the product dissolves in a solution or scatters into the atmosphere, the product may adhere to, for example, the surface to be processed and the side surface of the organic compound layer 103R, which may adversely affect the characteristics of the light-emitting device, or may form a leak path between multiple light-emitting devices. In addition, in the region where the end of the conductive layer 152R is exposed, the adhesion between the layers in contact with each other may decrease, and the organic compound layer 103R or the conductive layer 152R may easily peel off.

[0378] Therefore, by using a structure in which the organic compound layer 103R covers the upper surface and side surfaces of the conductive layer 152R, for example, it is possible to improve the yield and characteristics of the light-emitting device.

[0379] As described above, the resist mask 190R is preferably provided so as to cover the area between the dashed and dotted lines B1-B2 from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). As a result, as shown in FIG. 6D, the sacrificial layer 158R and the mask layer 159R are provided so as to cover the area between the dashed and dotted lines B1-B2 from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side). Therefore, for example, the insulating layer 175 can be prevented from being exposed between the dashed and dotted lines B1-B2. This can prevent the insulating layer 175, the insulating layer 174, and the insulating layer 173 from being partially removed by etching or the like, and the conductive layer 179 from being exposed. Therefore, it can be prevented that the conductive layer 179 is unintentionally electrically connected to another conductive layer. For example, it can be prevented that a short circuit occurs between the conductive layer 179 and the common electrode 155 formed in a later process.

[0380] The organic compound film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0381] When dry etching is used, deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as an etching gas.

[0382] Moreover, a gas containing oxygen may be used as the etching gas. When the etching gas contains oxygen, the etching speed can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching speed. This makes it possible to suppress damage to the organic compound film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0383] When using the dry etching method, it is preferable to use a gas containing one or more of H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3, or a group 18 element such as He or Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas. Specifically, for example, a gas containing H2 and Ar, or a gas containing CF4 and He can be used as the etching gas. Also, for example, a gas containing CF4, He, and oxygen can be used as the etching gas. Also, for example, a gas containing H2 and Ar, and a gas containing oxygen can be used as the etching gas.

[0384] As described above, in one embodiment of the present invention, the resist mask 190R is formed over the mask film 159Rf, and a part of the mask film 159Rf is removed using the resist mask 190R to form the mask layer 159R. Then, the organic compound film 103Rf is partly removed using the mask layer 159R as a hard mask to form the organic compound layer 103R. Thus, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using a lithography method. Note that a part of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may be removed.

[0385] Next, it is preferable to perform, for example, a hydrophobic treatment on the conductive layer 152G. When processing the organic compound film 103Rf, for example, the surface state of the conductive layer 152G may change to a hydrophilic state. For example, by performing a hydrophobic treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later process can be increased, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily required.

[0386] 7A, an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152B, the mask layer 159R, and the insulating layer 175. Then, as shown in FIG.

[0387] The organic compound film 103Gf can be formed by the same method as that used for forming the organic compound film 103Rf, and can have the same configuration as the organic compound film 103Rf.

[0388] 7(A), a sacrificial film 158Gf that will later become the sacrificial layer 158G and a mask film 159Gf that will later become the mask layer 159G are sequentially formed on the organic compound film 103Gf and the mask layer 159R. Then, a resist mask 190G is formed. The material and the forming method of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The material and the forming method of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0389] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0390] 7(B), a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The organic compound film 103Gf is then processed to form an organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0391] 7B, a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. Also, the mask layer 159R and the conductive layer 152B are exposed.

[0392] Next, it is preferable to perform, for example, a hydrophobic treatment on the conductive layer 152B. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B may change to a hydrophilic state. For example, by performing the hydrophobic treatment on the conductive layer 152B, for example, the adhesion between the conductive layer 152B and a layer (here, the organic compound layer 103B) formed in a later process can be improved, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily required.

[0393] 7C, an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layer 152B, the mask layer 159R, the mask layer 159G, and the insulating layer 175. Then, as shown in FIG.

[0394] The organic compound film 103Bf can be formed by the same method as that used for forming the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0395] 7(C), a sacrificial film 158Bf that will later become the sacrificial layer 158B and a mask film 159Bf that will later become the mask layer 159B are sequentially formed on the organic compound film 103Bf and the mask layer 159R. Then, a resist mask 190B is formed. The material and the forming method of the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The material and the forming method of the resist mask 190B are the same as those applicable to the resist mask 190R.

[0396] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0397] 7(D), a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. The resist mask 190B is then removed. The mask layer 159B is then used as a mask to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B. The organic compound film 103Bf is then processed to form an organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0398] 7D, a laminated structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. Also, the mask layers 159R and 159G are exposed.

[0399] It is preferable that the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are perpendicular or approximately perpendicular to the surface on which they are formed. For example, it is preferable that the angle between the surface on which they are formed and these side surfaces is 60 degrees or more and 90 degrees or less.

[0400] As described above, the distance between two adjacent ones of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B formed by the lithography method can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between two adjacent opposing ends of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In this way, by narrowing the distance between the island-shaped organic compound layers, a display device having high definition and a large aperture ratio can be provided. In addition, the distance between the first electrodes between adjacent light-emitting devices can also be narrowed, and can be, for example, 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Note that the distance between the first electrodes between adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0401] 8A, it is preferable to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. Depending on the subsequent process, the sacrificial layer 158R, the sacrificial layer 158G, the sacrificial layer 158B, the mask layer 159R, the mask layer 159G, and the mask layer 159B may remain in the display device. By removing the mask layer 159R, the mask layer 159G, and the mask layer 159B at this stage, it is possible to prevent the mask layer 159R, the mask layer 159G, and the mask layer 159B from remaining in the display device. For example, when a conductive material is used for the mask layer 159R, the mask layer 159G, and the mask layer 159B, it is possible to prevent the generation of a leak current and the formation of a capacitance due to the remaining mask layer 159R, the mask layer 159G, and the mask layer 159B by removing the mask layer 159R, the mask layer 159G, and the mask layer 159B in advance.

[0402] In the present embodiment, the case where the mask layers 159R, 159G, and 159B are removed will be described as an example, but the mask layers 159R, 159G, and 159B do not have to be removed. For example, when the mask layers 159R, 159G, and 159B contain the above-mentioned material having a light-shielding property against ultraviolet light, it is preferable to proceed to the next step without removing them, since the organic compound layer can be protected from ultraviolet light.

[0403] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B during the removal of the mask layer can be reduced compared to the case of using a dry etching method.

[0404] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0405] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, and water adsorbed on the surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced pressure atmosphere is preferable because it allows drying at a lower temperature.

[0406] Next, as shown in FIG. 8(B), an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0407] As described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. For this reason, it is preferable that the upper surface of the inorganic insulating film 125f has a high affinity with the material used for the insulating film (for example, a photosensitive resin composition containing an acrylic resin). In order to improve the affinity, it is preferable to perform a surface treatment to make the upper surface of the inorganic insulating film 125f hydrophobic (or to increase the hydrophobicity). For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By making the upper surface of the inorganic insulating film 125f hydrophobic in this way, the insulating film 127f can be formed with good adhesion. Note that the surface treatment may be the hydrophobization treatment described above.

[0408] Subsequently, as shown in FIG. 8(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0409] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, it is preferably formed by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than the insulating film 127f.

[0410] The inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat-resistant temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, respectively. By increasing the substrate temperature during film formation, the inorganic insulating film 125f can be a film with a low impurity concentration and high barrier properties against at least one of water and oxygen, even if it is thin.

[0411] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or more, 80°C or more, 100°C or more, or 120°C or more, and 200°C or less, 180°C or less, 160°C or less, 150°C or less, or 140°C or less.

[0412] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0413] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. By using the ALD method, damage during film formation can be reduced, and a film with high coverage can be formed, which is preferable. As the inorganic insulating film 125f, for example, an aluminum oxide film is preferably formed by the ALD method.

[0414] Alternatively, the inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling a highly reliable display device to be manufactured with high productivity.

[0415] The insulating film 127f is preferably formed by using the above-mentioned wet film formation method. The insulating film 127f is preferably formed by using a photosensitive material, for example, by spin coating, and more specifically, is preferably formed by using a photosensitive resin composition containing an acrylic resin.

[0416] The insulating film 127f is preferably formed using a resin composition containing, for example, a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also called constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates an acid when irradiated with light and a compound that generates an acid when heated can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0417] Moreover, it is preferable to perform heat treatment (also referred to as pre-baking) after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably from 50° C. to 200° C., more preferably from 60° C. to 150° C., and further preferably from 70° C. to 120° C. This makes it possible to remove the solvent contained in the insulating film 127f.

[0418] Next, exposure is performed to expose a part of the insulating film 127f to visible light or ultraviolet light. When a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is applied to an area where the insulating layer 127 is not to be formed in a later step. The insulating layer 127 is formed in an area sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is applied to the conductive layers 152R, 152G, 152B, and 152C. When a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is applied to an area where the insulating layer 127 is to be formed.

[0419] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment, the insulating layer 127 is processed so as to have a portion overlapping with the upper surface of the conductive layer 151.

[0420] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0421] Here, by providing a barrier insulating layer against oxygen (for example, an aluminum oxide film, etc.) as one or both of the sacrificial layer 158 (the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B) and the inorganic insulating film 125f, it is possible to reduce the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an atmosphere containing oxygen, oxygen may be bonded to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0422] 9(A), development is performed to remove the exposed region of the insulating film 127f, forming an insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and in a region surrounding the conductive layer 152C. When an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as the developer.

[0423] Subsequently, residues from the development process (so-called scum) may be removed, for example by ashing using oxygen plasma.

[0424] In order to adjust the height of the surface of the insulating layer 127a, etching may be performed. The insulating layer 127a may be processed by ashing using oxygen plasma, for example. Even when a non-photosensitive material is used as the insulating film 127f, the height of the surface of the insulating film 127f can be adjusted by ashing, for example.

[0425] 9(B), an etching process is performed using the insulating layer 127a as a mask to remove a part of the inorganic insulating film 125f and to thin the thickness of the sacrificial layer 158R, the sacrificial layer 158G, and a part of the sacrificial layer 158B. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. In addition, the surfaces of the thin parts of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B are exposed. In the following, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0426] The first etching process can be performed by dry etching or wet etching. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the first etching process can be performed at once, which is preferable.

[0427] By performing etching using insulating layer 127a with tapered side surfaces as a mask, the side surfaces of inorganic insulating layer 125 and the upper end portions of the side surfaces of sacrificial layers 158R, 158G, and 158B can be tapered relatively easily.

[0428] When dry etching is performed, it is preferable to use a chlorine-based gas. As the chlorine-based gas, Cl2, BCl3, SiCl4, CCl4, etc. can be used alone or in a mixture of two or more gases. In addition, oxygen gas, hydrogen gas, helium gas, argon gas, etc. can be appropriately added alone or in a mixture of two or more gases to the chlorine-based gas. By using dry etching, the thin film regions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can be formed with good in-plane uniformity.

[0429] As the dry etching apparatus, a dry etching apparatus having a high density plasma source can be used. As the dry etching apparatus having a high density plasma source, for example, an inductively coupled plasma (ICP) etching apparatus can be used. Or, a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes can be used. The capacitively coupled plasma etching apparatus having parallel plate electrodes may be configured to apply a high frequency voltage to one of the parallel plate electrodes. Or, it may be configured to apply a plurality of different high frequency voltages to one of the parallel plate electrodes. Or, it may be configured to apply a high frequency voltage of the same frequency to each of the parallel plate electrodes. Or, it may be configured to apply a high frequency voltage of different frequencies to each of the parallel plate electrodes.

[0430] Furthermore, when dry etching is performed, by-products and the like generated by the dry etching may be deposited on the upper surface and side surfaces of the insulating layer 127a, etc. Therefore, components contained in the etching gas, components contained in the inorganic insulating film 125f, and components contained in the sacrificial layers 158R, 158G, and 158B may be contained in the insulating layer 127 after the display device is completed.

[0431] In addition, it is preferable to perform the first etching process by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to the case of using the dry etching method. For example, the wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, the wet etching can be performed by the paddle method. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the above-mentioned etching process can be performed at once, which is preferable.

[0432] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the film thickness becomes thin. In this way, by leaving the corresponding sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, it is possible to prevent the organic compound layers 103R, 103G, and 103B from being damaged in the subsequent process.

[0433] Next, the entire substrate is exposed to light, and it is preferable to irradiate the insulating layer 127a with visible light or ultraviolet light. The energy density of the exposure is 0 mJ / cm 2 Larger, 800mJ / cm 2 It is preferable to set the concentration to 0 mJ / cm or less. 2 Larger than 500mJ / cm 2 It is more preferable to set the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. In addition, the substrate temperature required for a heat treatment for transforming the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0434] Here, by providing the sacrificial layers 158R, 158G, and 158B with barrier insulating layers against oxygen (for example, an aluminum oxide film, etc.), it is possible to reduce the diffusion of oxygen into the organic compound layers 103R, 103G, and 103B. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer may be excited, and the reaction with oxygen contained in the atmosphere may be promoted. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an atmosphere containing oxygen, oxygen may be bonded to the organic compound contained in the organic compound layer. By providing the sacrificial layers 158R, 158G, and 158B on the island-shaped organic compound layer, it is possible to reduce the bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0435] Next, a heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having a tapered shape on the side surface (FIG. 9C). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere. The substrate temperature of the heat treatment in this step is preferably set higher than that of the heat treatment (pre-baking) after the formation of the insulating film 127f. This can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0436] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the sacrificial layers 158R, 158G, and 158B are left in a state where the film thickness is reduced, so that the organic compound layers 103R, 103G, and 103B can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0437] Depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of the post-bake, a concave curved shape may be formed on the side surface of the insulating layer 127. For example, the higher the temperature or the longer the time under the post-bake conditions, the more likely the shape of the insulating layer 127 is to change, and a concave curved shape may be formed.

[0438] 10(A), an etching process is performed using the insulating layer 127 as a mask to remove parts of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a part of the inorganic insulating layer 125 may also be removed. As a result, openings are formed in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, respectively, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Note that, hereinafter, the etching process using the insulating layer 127 as a mask may be referred to as a second etching process.

[0439] An end portion of the inorganic insulating layer 125 is covered with an insulating layer 127. Also, Fig. 10(A) shows an example in which a part of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127, and the tapered portion formed by the second etching process is exposed.

[0440] If the first etching process is not performed and the inorganic insulating layer 125 and the mask layer are etched together after post-baking, the inorganic insulating layer 125 and the mask layer under the end of the insulating layer 127 may disappear due to side etching, and a cavity may be formed. The cavity may cause unevenness on the surface on which the common electrode 155 is formed, and the common electrode 155 may be easily cut off. Even if the inorganic insulating layer 125 and the mask layer are side-etched in the first etching process and a cavity is formed, the insulating layer 127 can fill the cavity by performing post-baking thereafter. Then, the mask layer, which has become thinner, is etched in the second etching process, so the amount of side etching is small, and cavities are less likely to be formed, and even if cavities are formed, they can be made extremely small. This allows the surface on which the common electrode 155 is formed to be flatter.

[0441] The insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. Also, for example, the end of the insulating layer 127 may contact the upper surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, if the developed insulating layer 127a is not exposed to light, the shape of the insulating layer 127 may be easily changed.

[0442] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to the case of using the dry etching method. The wet etching can be performed using an alkaline solution such as TMAH.

[0443] On the other hand, when the second etching process is performed using a wet etching method, if there are gaps between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and at the interface between the organic compound layer 103 and the insulating layer 175 due to, for example, a problem of adhesion between the organic compound layer 103 and other layers, the chemical solution used in the second etching process may penetrate into the gaps and contact the pixel electrodes. Here, if the chemical solution contacts both the conductive layer 151 and the conductive layer 152, the conductive layer with the lower natural potential may corrode due to galvanic corrosion. For example, if aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, the conductive layer 152 may corrode. As a result of the above, the yield of the display device may decrease. In addition, the reliability of the display device may decrease.

[0444] As described above, when the conductive layer 152 is formed so as to cover the upper surface and the side surface of the conductive layer 151, it is possible to prevent the chemical solution from contacting the conductive layer 151 in the second etching process even when there is a gap between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and at the interface between the organic compound layer 103 and the insulating layer 175. This makes it possible to prevent corrosion of the pixel electrode, for example, corrosion of the conductive layer 152.

[0445] Furthermore, by forming the insulating layer 156 so as to have an area overlapping with the side surface of the conductive layer 151 and forming the conductive layer 152 so as to cover the conductive layer 151 and the insulating layer 156, it is possible to prevent the conductive layer 152 from being broken, and therefore it is possible to prevent, for example, a chemical solution from contacting the conductive layer 151 in the second etching process. This makes it possible to prevent corrosion of the pixel electrode, for example, corrosion of the conductive layer 152.

[0446] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to prevent connection failures caused by disconnected portions of the common electrode 155 between the light-emitting devices and an increase in electrical resistance caused by portions with locally thin thicknesses. As a result, the display device of one embodiment of the present invention can have improved display quality.

[0447] In addition, after exposing a part of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, a heat treatment is further performed. The heat treatment can remove water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, and the like. The heat treatment may also change the shape of the insulating layer 127. Specifically, the insulating layer 127 may spread so as to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0448] If the temperature of the heat treatment is too low, the water contained in each organic compound layer and the water adsorbed on the surface of each organic compound layer cannot be sufficiently removed. If the temperature of the heat treatment is too high, the organic compound layer 103 may deteriorate and the shape of the insulating layer 127 may change excessively. Therefore, the heat treatment should be performed at a temperature higher than the temperature at which water is desorbed from the organic compound layer 103 and at a temperature higher than the temperature at which the T of the organic compounds contained in the organic compound layer 103 is desorbed. g A lower temperature is preferable, and the T g A lower temperature is preferable. Specifically, the substrate temperature is preferably 80° C. or more and 130° C. or less, preferably 90° C. or more and 120° C. or less, more preferably 100° C. or more and 120° C. or less, and further preferably 100° C. or more and 110° C. or less. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere, but a reduced pressure atmosphere is preferable in order to prevent re-adsorption of water desorbed from the organic compound layer 103.

[0449] This heat treatment can sufficiently remove water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer without causing deterioration of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, and without causing excessive change in the shape of the insulating layer 127. This can prevent the characteristics of the light-emitting device from deteriorating.

[0450] 10(B), the common layer 104 and the common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by a method such as a sputtering method or a vacuum deposition method. The common layer 104 may be formed by a deposition method, and the common electrode 155 may be formed by a sputtering method.

[0451] 10C, the protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0452] Then, the substrate 120 is attached over the protective layer 131 using the resin layer 122, so that a display device can be manufactured. As described above, in a manufacturing method of a display device according to one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of the display device and suppress the occurrence of defects.

[0453] As described above, in the manufacturing method of the display device according to one embodiment of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103B are formed by forming a film on one surface and then processing it, instead of using a fine metal mask, so that the island-shaped layers can be formed with a uniform thickness. As a result, a high-definition display device or a display device with a high aperture ratio can be realized. Even if the definition or aperture ratio is high and the distance between the subpixels is extremely short, the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current can be prevented from occurring between the subpixels. As a result, crosstalk can be prevented, and a display device with extremely high contrast can be realized. Even in a display device including a tandem light-emitting device manufactured by a lithography method, a display device with good characteristics can be provided.

[0454] The configuration of this embodiment mode can be used in appropriate combination with the configurations of the other embodiments.

[0455] (Embodiment 5) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0456] The display device of the present embodiment can be a high-definition display device. Therefore, the display device of the present embodiment can be used for, for example, a display unit of a wristwatch-type or bracelet-type information terminal (wearable device), a VR device such as a head-mounted display (HMD), and a head-mounted wearable device such as a glasses-type AR device.

[0457] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0458] [Display module] 11A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290.

[0459] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 described later can be viewed.

[0460] 11(B) shows a perspective view that typically illustrates the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected to each other by a wiring portion 286 that is composed of a plurality of wirings.

[0461] The pixel section 284 has a plurality of pixels 284a arranged periodically. An enlarged view of one pixel 284a is shown on the right side of Fig. 11(B). The various configurations described in the previous embodiment can be applied to the pixel 284a. Fig. 11(B) shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in Fig. 3.

[0462] The pixel circuit section 283 has a plurality of pixel circuits 283a that are periodically arranged.

[0463] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitance for each light-emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active matrix display device.

[0464] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0465] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. In addition, an IC may be mounted on the FPC 290.

[0466] The display module 280 can be configured such that one or both of the pixel circuit section 283 and the circuit section 282 are laminated under the pixel section 284, so that the aperture ratio (effective display area ratio) of the display section 281 can be extremely high. For example, the aperture ratio of the display section 281 can be set to 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, so that the resolution of the display section 281 can be extremely high. For example, it is preferable that the pixels 284a are arranged in the display section 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0467] Such a display module 280 is extremely high-definition and can be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display unit 281, so that even if the display unit is enlarged with a lens, pixels are not visible, and a highly immersive display can be performed. In addition, the display module 280 is not limited to this, and can be suitably used in electronic devices having a relatively small display unit. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0468] [Display device 100A] The display device 100A shown in FIG. 12A includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240, and a transistor 310.

[0469] The substrate 301 corresponds to the substrate 291 in FIGS. 11A and 11B. The transistor 310 is a transistor having a channel formation region in the substrate 301. For example, a semiconductor substrate such as a single crystal silicon substrate can be used as the substrate 301. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0470] In addition, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0471] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0472] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0473] The conductive layer 241 is provided over the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0474] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B are provided on the insulating layer 175. FIG. 12(A) shows an example in which the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B have the laminated structure shown in FIG. 2(B). An insulator is provided in the region between the adjacent light emitting devices. For example, in FIG. 12(A), an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in the region.

[0475] An insulating layer 156R is provided to have a region overlapping with a side surface of the conductive layer 151R of the light emitting device 130R, an insulating layer 156G is provided to have a region overlapping with a side surface of the conductive layer 151G of the light emitting device 130G, and an insulating layer 156B is provided to have a region overlapping with a side surface of the conductive layer 151B of the light emitting device 130B. Further, a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided to cover the conductive layer 151B and the insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0476] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source or drain of the transistor 310 via the insulating layer 243, the insulating layer 255, the insulating layer 174, a plug 256 embedded in the insulating layer 175, the conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0477] Further, a protective layer 131 is provided on the light emitting devices 130R, 130G, and 130B. The substrate 120 is bonded onto the protective layer 131 by a resin layer 122. For details of the components from the light emitting devices 130 to the substrate 120, refer to the third embodiment. The substrate 120 corresponds to the substrate 292 in FIG. 11(A).

[0478] Fig. 12(B) is a modified example of the display device 100A shown in Fig. 12(A). The display device shown in Fig. 12(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area overlapping one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. In the display device shown in Fig. 12(B), the light-emitting device 130 can emit, for example, white light. Also, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0479] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in the case where a plurality of configuration examples are shown in one embodiment mode in this specification, the configuration examples can be combined as appropriate.

[0480] (Embodiment 6) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0481] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has high reliability and can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portion of various electronic devices.

[0482] Examples of electronic devices include electronic devices with relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and audio playback devices.

[0483] In particular, the display device of one embodiment of the present invention can be suitably used in electronic devices having a relatively small display area because it can increase the resolution. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices, glasses-type AR devices, and MR devices.

[0484] The display device of one embodiment of the present invention preferably has an extremely high resolution such as HD (1280×720 pixels), FHD (1920×1080 pixels), WQHD (2560×1440 pixels), WQXGA (2560×1600 pixels), 4K (3840×2160 pixels), or 8K (7680×4320 pixels). In particular, a resolution of 4K, 8K, or more is preferable. In addition, the pixel density (definition) of the display device of one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, more preferably 1000 ppi or more, more preferably 2000 ppi or more, more preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 7000 ppi or more. By using a display device having either or both of high resolution and high definition, it is possible to further improve the sense of realism and depth in electronic devices for personal use such as portable or home use. In addition, the screen ratio (aspect ratio) of the display device of one embodiment of the present invention is not particularly limited. For example, the display device can support various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0485] The electronic device of this embodiment may have a sensor (including a function of measuring force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substances, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0486] The electronic device of the present embodiment can have various functions, such as a function of displaying various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, time, etc., a function of executing various software (programs), a wireless communication function, a function of reading out a program or data recorded on a recording medium, etc.

[0487] An example of a wearable device that can be worn on the head will be described with reference to Figures 13(A) to 13(D). These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device have the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the user's sense of immersion.

[0488] Electronic device 700A shown in FIG. 13(A) and electronic device 700B shown in FIG. 13(B) each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0489] The display device of one embodiment of the present invention can be applied to the display panel 751. Thus, the electronic device can be highly reliable.

[0490] Each of the electronic devices 700A and 700B can project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Since the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, each of the electronic devices 700A and 700B is an electronic device capable of AR display.

[0491] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image of the front as an imaging unit. In addition, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to the orientation in the display area 756.

[0492] The communication unit has a wireless communication device and can supply, for example, a video signal through the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0493] Furthermore, the electronic device 700A and the electronic device 700B are provided with a battery, which can be charged wirelessly and / or wired.

[0494] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting that the outer surface of the housing 721 is touched. The touch sensor module detects a tap operation, a slide operation, or the like by the user, and can execute various processes. For example, a tap operation can execute a process such as pausing or resuming a video, and a slide operation can execute a process such as fast forwarding or rewinding. Furthermore, by providing a touch sensor module in each of the two housings 721, the range of operations can be expanded.

[0495] As the touch sensor module, various touch sensors can be applied. For example, various types of sensors can be adopted, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to apply a capacitance type or an optical type sensor to the touch sensor module.

[0496] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving element. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0497] Electronic device 800A shown in FIG. 13(C) and electronic device 800B shown in FIG. 13(D) each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0498] The display device of one embodiment of the present invention can be applied to the display portion 820. Thus, the electronic device can be made highly reliable.

[0499] Display unit 820 is provided inside housing 821 at a position that can be viewed through lens 832. Also, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0500] The electronic device 800A and the electronic device 800B can each be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0501] It is preferable that electronic device 800A and electronic device 800B each have a mechanism capable of adjusting the left-right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism for adjusting the focus by changing the distance between lens 832 and display unit 820.

[0502] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. For example, in Fig. 13(C), the mounting unit 823 is shaped like a pair of glasses (also called a joint or temple), but is not limited thereto. The mounting unit 823 may be shaped like a helmet or band, for example, as long as it can be worn by the user.

[0503] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. In addition, multiple cameras may be provided so as to be compatible with multiple angles of view, such as telephoto and wide angle.

[0504] Although an example having the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a distance image sensor such as LiDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the distance image sensor, more information can be obtained, enabling more accurate gesture operation.

[0505] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having the vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This makes it possible to enjoy video and audio by simply wearing the electronic device 800A without requiring a separate audio device such as headphones, earphones, or speakers.

[0506] The electronic device 800A and the electronic device 800B may each have an input terminal. The input terminal can be connected to a cable for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0507] The electronic device of one embodiment of the present invention may have a function of wireless communication with the earphone 750. The earphone 750 has a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 700A shown in FIG. 13A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, the electronic device 800A shown in FIG. 13C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0508] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 13(B) has earphone unit 727. For example, earphone unit 727 and a control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or mounting unit 723.

[0509] Similarly, electronic device 800B shown in Fig. 13(D) has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. A part of the wiring connecting earphone unit 827 and control unit 824 may be disposed inside housing 821 or wearing unit 823. In addition, earphone unit 827 and wearing unit 823 may have a magnet. This...

Claims

1. An organic compound represented by general formula (G1-1): 【Chemistry 1】 (In the general formula (G1-1), R ２ ~R ９ At least one of the groups represented by the general formula (R-1) or (R-2) represents a group, and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. １ represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R １１ ~R ２６ Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and each of p and q independently represents 0 or 1. １１ ~R １８ Any two of R may be bonded to each other to form a ring; １９ ~R ２６ Any two of R may be bonded to each other to form a ring; ２ ~R ９ When two or more of the groups are groups represented by general formula (R-1) or (R-2), they may be the same or different.

2. In claim 1, The R ４ and the R ７ or both of the above are groups represented by general formula (R-1) or (R-2).

3. An organic compound represented by general formula (G1-2): 【Chemistry 2】 (In the general formula (G1-2), R ２ ~R ９ At least one of the groups is a group represented by any one of general formulas (R-1) to (R-4), and the others each independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. １ represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same or different from each other, R １１ ~R ４６ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. １１ ~R １８ Any two of R may be bonded to each other to form a ring; １９ ~R ２６ Any two of R may be bonded to each other to form a ring; ２７ ~R ３６ Any two of R may be bonded to each other to form a ring; ３７ ~R ４６ Any two of R may be bonded to each other to form a ring; ２ ~R ９ When two or more of the groups are groups represented by any of the general formulae (R-1) to (R-4), they may be the same or different.

4. In claim 3, The R ４ and the R ７ or both of the above are groups represented by any one of general formulas (R-1) to (R-4).

5. An organic compound represented by general formula (G1-3): 【Chemistry 3】 (In the general formula (G1-3), R ２ ~R ９ At least one of the groups represented by any one of the general formulae (R-5) to (R-8) represents a group represented by any one of the general formulae (R-5) to (R-8), and the others each independently represent a hydrogen atom (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ５１ ~R ５４ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R １１ ~R ４６ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. １１ ~R １８ Any two of R may be bonded to each other to form a ring; １９ ~R ２６ Any two of R may be bonded to each other to form a ring; ２７ ~R ３６ Any two of R may be bonded to each other to form a ring; ３７ ~R ４６ Any two of R may be bonded to each other to form a ring; ２ ~R ９ When two or more of the groups are groups represented by any of the general formulae (R-5) to (R-8), they may be the same or different.

6. In claim 5, The R ４ and the R ７ or both of the above are groups represented by any one of general formulas (R-5) to (R-8).

7. An organic compound represented by general formula (G1-4): 【Chemistry 4】 (In the general formula (G1-4), R ２ ~R ９ At least one of the groups represented by any one of the general formulae (R-9) to (R-12) represents a group represented by any one of the general formulae (R-9) to (R-12), and the others each independently represent a hydrogen atom (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. ５１ ~R ５４ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R １１ ~R ４６ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer of 0 to 4, and t represents 0 or 1. １１ ~R １８ Any two of R may be bonded to each other to form a ring; １９ ~R ２６ Any two of R may be bonded to each other to form a ring; ２７ ~R ３６ Any two of R may be bonded to each other to form a ring; ３７ ~R ４６ Any two of R may be bonded to each other to form a ring; ２ ~R ９ When two or more of the groups are groups represented by any of the general formulae (R-9) to (R-12), they may be the same or different.

8. In claim 7, The R ４ and the R ７ or both of the above are groups represented by any one of general formulas (R-5) to (R-8).

9. An organic compound represented by general formula (G2): 【Chemistry 5】 (In the general formula (G2), R ２ , R ３ , R ５ , R ６ , R ８ , R ９ and R ５１ ~R ５８ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R １１ ~R １８ and R ６１ ~R ６８ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p, q, r, and s each independently represent 0 or 1.

10. An organic compound represented by general formula (G3): 【Chemistry 6】 (In the general formula (G3), R ２ , R ３ , R ５ , R ６ , R ８ , R ９ and R ５１ ~R ５８ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R １１ ~R １８ and R ６１ ~R ６８ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p, q, r, and s each independently represent 0 or 1.

11. An organic compound represented by general formula (G4): 【Chemistry 7】 (In the general formula (G4), R ２ , R ３ , R ５ , R ６ , R ８ , R ９ and R ５１ ~R ５８ each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms; R １１ ~R １８ and R ６１ ~R ６８ each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms.

12. In any one of claims 9 to 11, An organic compound in which the group bonded to the 4-position of a phenanthroline ring is the same as the group bonded to the 7-position.

13. An organic compound represented by structural formula (100) or structural formula (152). 【Chemistry 8】

14. A light-emitting device using the organic compound according to any one of claims 1 to 11 and 13.

15. A first electrode, a second electrode, and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer has a light-emitting layer and an electron injection layer, the electron injection layer is located between the light emitting layer and the second electrode; A light-emitting device, wherein the electron injection layer comprises an organic compound according to any one of claims 1 to 11 and 13.

16. A first electrode, a second electrode, and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer includes an intermediate layer, a first light-emitting layer, and a second light-emitting layer, the intermediate layer is located between the first light-emitting layer and the second light-emitting layer, A light-emitting device, wherein the intermediate layer comprises an organic compound according to any one of claims 1 to 11 and 13.

17. A light emitting apparatus comprising the light emitting device according to claim 14 and a transistor or a substrate.

18. 20. An electronic device comprising: the light-emitting device according to claim 17; and a detection unit, an input unit, or a communication unit.

Images