Solar battery, manufacturing method the same, and power consumption device

Abstract

To provide a solar battery, a manufacturing method of the same, and a power consumption device.SOLUTION: A manufacturing method of a solar battery (10), includes: a step of providing a substrate (100) having a first front surface (101) and a second front surface (102) that is opposite to the first front surface (101); a step of forming a protection material layer to the first front surface (101) of the substrate (100), removing one protection material layer on a predetermined first dope region, and manufacturing a protection layer; and a step that is a step of manufacturing the substrate (100) containing the first dope region by performing first doping to the substrate (100) along the predetermined first dope region, in which a width of the first dope region is 15 to 30 μm.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] This application relates to the field of battery technology, and in particular to solar cells and methods of making same, as well as to power consuming devices. [Background technology]

[0002] At present, the mainstream PERC solar cells on the market are unable to meet the demand for higher energy conversion efficiency and output, so in 2013, the concept of TOPCon high-efficiency solar cells emerged. After continuous research and development, TOPCon cells have now become a relatively mature technology that combines both cost and efficiency. The large-scale mass production of TOPCon cells is considered to have opened the first year of industrialization of N-type batteries, and it is said that it will gradually replace the mainstream position of PERC batteries in the market. Regarding the effect of backside passivation contact technology, N-TOPCon batteries are said to have a higher market value than PERC batteries, have a higher theoretical conversion efficiency than PERC batteries, and are also close to PERC batteries in price. TOPCon batteries are less susceptible to the effects of weather, and especially in terms of spectral response, they show very good response to both long waves and short waves. Compared with PERC batteries, which are limited to shortwave response only, TOPCon batteries have great potential in spectral response, can ensure continuous output of power generation, and have the advantages of low attenuation, high bifacial ratio, and low temperature coefficient, which has a significant power generation gain effect in terminal power plants.

[0003] TOPCon cell is a tunnel oxide passivation contact solar cell technology based on the selective carrier principle, which on the one hand originates from the different potential well heights of the valence band and conduction band for holes and electrons, and on the other hand originates from the different effective masses of holes and electrons. By combining an ultra-thin tunnel oxide layer with a doped polysilicon layer, electron tunneling and hole blocking are realized, and excellent chemical passivation and field passivation are realized. Conventional TOPCon cells use an N-type silicon wafer as a substrate, realize full boron diffusion on the front side, form a PN junction on the front side of the cell, and realize the splitting of excitons into electron-hole pairs by building a built-in electric field. However, in this technical background, the full boron diffusion of the cell structure, even in combination with oxidation annealing, is difficult to avoid lattice loss on the front side of the cell, which forms a large number of recombination centers, thus causing the loss of the open circuit voltage of the cell and the decrease of the photoelectric conversion efficiency, which adversely affects the cell performance. Summary of the Invention

[0004] According to various embodiments of the present application, a solar cell and method for manufacturing the same, and a power consuming device are provided.

[0005] This application is providing a substrate having a first surface and a second surface opposite the first surface; forming a protective material layer on the first surface and removing a portion of the protective material layer on a predetermined first doped region to produce a protective layer; a step of performing a first doping on the substrate along the predetermined first doped region to manufacture a substrate including a first doped region, the first doped region having a width of 10 μm to 35 μm; removing the protective layer and fabricating a passivated contact structure on the second surface. In one embodiment, a method for manufacturing a solar cell is provided, further comprising the step of performing a texturing process on the substrate before forming the protective material layer.

[0006] In one embodiment, the method further includes performing a first cleaning process on the substrate including the protective layer after the protective layer is formed and before the substrate including the first doped region is formed; The conditions for the first cleaning treatment are as follows: the cleaning solution used in the first cleaning treatment contains, by mass percentage, 1 to 6% of a monobasic base, 0.5 to 2% of a texturing additive, and 93 to 98.5% of a first solvent; The duration of the first cleaning process is 150 to 350 seconds. The temperature for the first washing process is 60 to 80°C.

[0007] In one embodiment, the material of the protective layer includes one or more of silicon oxide, silicon nitride, and photosensitive adhesive.

[0008] In one embodiment, the method for removing the protective layer includes performing a second cleaning process on the substrate including the first doped region; The conditions for the second cleaning treatment include cleaning for 150 to 350 seconds using an aqueous solution of hydrofluoric acid having a mass percentage of 40 to 80%.

[0009] In one embodiment, the first doped region has a surface concentration of 10 19 ~3×10 20 , and the sheet resistance is 40 to 170 Ω.

[0010] In one embodiment, after manufacturing the passivation contact structure, the method further includes manufacturing a first passivation layer and a first anti-reflection layer laminated on the first surface, and manufacturing a second anti-reflection layer on the passivation contact structure.

[0011] In one embodiment, after manufacturing the first passivation layer, the first anti-reflection layer, and the second anti-reflection layer, the method further includes the steps of: manufacturing a first electrode penetrating the first passivation layer and the first anti-reflection layer and connected to the first doped region, and manufacturing a second electrode penetrating the second anti-reflection layer and connected to the passivation contact structure.

[0012] The present application further provides a solar cell manufactured according to the above manufacturing method.

[0013] The present application further provides a power consuming device comprising the above-mentioned solar cell as a power source.

[0014] The details of one or more embodiments of the application are set forth in the drawings and description below. Other features, objects, and advantages of the application will become apparent from the description, drawings, and claims. [Brief description of the drawings]

[0015] To better describe and explain the embodiments and / or examples of the invention disclosed herein, reference may be made to one or more drawings, in which additional details or examples for illustrating the drawings should not be considered as limiting the scope of the disclosed invention, either of the presently described embodiments and / or examples, or the best mode of these inventions as currently understood. [Figure 1] FIG. 2 is a schematic structural diagram of a solar cell according to a specific example of the present application. [Diagram 2] 1A and 1B are plan views of a first surface of a specific example of a passivation contact structure of the present application before fabrication, in which (a) is a first doped region having a suede structure, and (b) is a first surface having a suede structure. [Diagram 3] 1 is a structural schematic diagram of a solar cell and a power consumption device in an embodiment of the present application; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] In order to facilitate the understanding of the present application, the present application will now be described more fully with reference to the associated drawings, in which preferred embodiments of the present application are shown. However, the present application may be embodied in many different forms and is not limited to the embodiments set forth herein. On the contrary, the purpose of providing these embodiments is to provide a more thorough and comprehensive understanding of the present disclosure.

[0017] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood to indicate or imply the relative importance or number of the technical features indicated. This can indicate or imply that the feature defined by "first" and "second" includes at least one of the feature. In the description of the invention, "plurality" means at least two, e.g., two, three, etc., unless otherwise clearly and specifically limited. In the description of the present application, "some" means at least one, e.g., one, two, etc., unless otherwise clearly and specifically limited.

[0018] When a numerical range is disclosed herein, the range is considered to be continuous and includes the minimum and maximum values ​​of the range, as well as all values ​​between the minimum and maximum values. Furthermore, when a range refers to an integer, it includes all integers between the minimum and maximum values ​​of the range. Furthermore, when multiple ranges are provided to describe a feature or characteristic, the ranges can be combined. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges contained therein.

[0019] In describing positional relationships, unless otherwise specified, when an element, e.g., a layer, film, substrate, etc., is referred to as being "on" another film layer, it may be directly on the other film layer or may be present through an intermediate film layer. Further, when a layer is referred to as being "below" another layer, it may be directly below or may be present through one or more intermediate layers. Also, when a layer is referred to as being "between" two layers, it is understood that it may be the only layer between the two layers, or that there may be one or more intermediate layers.

[0020] The use of "including," "having," and "including" herein contemplates a non-exclusive inclusion, but allows for the addition of other components, unless a limiting term, such as "only" or "consisting of," is expressly used.

[0021] Unless stated to the contrary, singular terms may include plurals and the quantity is not to be understood as being one.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used in this specification are for the purpose of describing specific examples only and are not intended to be limiting of this application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0023] In this application: providing a substrate 100 having a first surface 101 and a second surface 102 opposite the first surface 101; forming a protective material layer on the first surface 101 and removing a portion of the protective material layer on a predetermined first doped region 103 to produce a protective layer; A step of performing a first doping on a substrate along a predetermined first doped region 103 to produce a substrate including the first doped region 103, the first doped region 103 having a width of 10 to 35 μm; removing the protective layer and fabricating a passivation contact structure 110 on the second surface 102.

[0024] Furthermore, the width of the first doped region may be, but is not limited to, 10 μm, 12 μm, 14 μm, 15 μm, 16 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 24 μm, 26 μm, 28 μm, 29 μm, 30 μm, 31 μm, 32 μm, 34 μm or 35 μm, and in one embodiment, the width of the first doped region is 15-30 μm.

[0025] In one particular example, the method further includes texturing the substrate before forming the protective material layer.

[0026] The texturing process on the substrate may be performed on one or both of the first and second surfaces of the substrate, but is not limited thereto, and preferably, the texturing process is performed on the first surface of the substrate.

[0027] As can be seen, the components of the texturing liquid include, by mass percentage, 0.6-2.0% monobasic base, 0.3-1.0% texturing additive, and 97-99% second solvent, the texturing time is 350-550 seconds, and the texturing temperature is 70-85°C.

[0028] In a specific example, the material of the protective layer includes one or more of silicon oxide, silicon nitride, and a photosensitive adhesive.

[0029] Specifically, the photosensitive adhesive may be one or more of, but is not limited to, ma-N400, NR9-6000PY, and N5735-L0 (N244).

[0030] As can be appreciated, the method of fabricating the protective layer can be, but is not limited to, one or more of wet oxygen, dry oxygen, LPCVD, or phosphorus diffusion tube.

[0031] Furthermore, the material of the protective layer is silicon oxide. Specifically, the method for producing silicon oxide is a phosphorus diffusion tube, the production temperature is 500-900°C, the production time is 1500-5000 seconds, the production pressure is 600-1024 mbar, and silicon oxide having a thickness of 5-20 nm is obtained.

[0032] Specifically, the thickness of the silicon oxide may be, but is not limited to, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, or 20 nm.

[0033] In a specific example, in the process of manufacturing the above silicon oxide as a protective layer material, the manufacturing temperature may be, but is not limited to, 500°C, 550°C, 600°C, 650°C, 700°C, 750°C, 800°C, 850°C or 900°C, the manufacturing time may be, but is not limited to, 1500s, 2000s, 2500s, 3000s, 3500s, 4000s, 4500s or 5000s, and the manufacturing pressure may be, but is not limited to, 600mbar, 700mbar, 800mbar, 900mbar, 1000mbar or 1024mbar.

[0034] The protective layer can effectively avoid the lattice distortion caused by doping the first surface of the substrate, effectively realize localized pattern doping, achieve excellent ohmic contact, lower recombination centers, and improve battery conversion efficiency.

[0035] In a specific example, a portion of the protective material layer on a predetermined first doped region is removed by a laser method, and the laser processing conditions are: rated power 15-45W, laser frequency 300-950KHz, light spot size 10-35μm, and virtual reality ratio 0.2:0.5-0.4:0.5.

[0036] Specifically, the rated power of the laser treatment may be, but is not limited to, 15w, 17w, 20w, 22w, 24w, 26w, 28w, 30w, 32w, 34w, 36w, 38w, 40w, 42w, or 45w, and the laser frequency may be 300KHz, 350KHz, 400KHz, 450KHz, 500KHz, 550KHz, 600KHz, 650KHz, 700KHz, 750KHz, 800KHz, 850KHz, 900KHz, or 950KHz. The laser may have a rated power of 20-40w, a laser frequency of 350-900KHz, and a light spot size of 15-30μm.

[0037] In a specific example, the method further includes performing a first cleaning process on the substrate including the protective layer after the protective layer is manufactured and before the substrate including the first doped region is manufactured.

[0038] In one specific example, the conditions for the first cleaning treatment are such that the components of the first cleaning solution contain, by mass percentage, 1-6% of a monobasic base, 0.5-2% of a texturing additive, and 93-98.5% of a first solvent, the time for the first cleaning treatment is 150-350 seconds, and the temperature for the first cleaning treatment is 65-75°C; in one embodiment, the components contain 1.4-5% of a monobasic base, 0.9-1.5% of a texturing additive, and 93.5-98% of a first solvent, the time for the first cleaning treatment is 200-300 seconds, and the temperature for the first cleaning treatment is 65-75°C.

[0039] Specifically, the time for the first cleaning process may be, but is not limited to, 200 s, 210 s, 220 s, 230 s, 240 s, 250 s, 260 s, 270 s, 280 s, 290 s or 300 s, and the temperature for the first cleaning process may be, but is not limited to, 65°C, 66°C, 67°C, 68°C, 69°C, 70°C, 71°C, 72°C, 73°C, 74°C or 75°C.

[0040] In one specific example, the monobasic base may include, but is not limited to, one or more of potassium hydroxide and sodium hydroxide. The first and second solvents, each of which may be independently selected, may include, but are not limited to, water, which may be understood to be deionized water.

[0041] As can be seen, cleaning here can eliminate the grating losses caused by the laser.

[0042] In one specific example, the first doped region has a surface concentration of 1.5×10 19 ~2.5×10 20 , and the sheet resistance is 60 to 150 Ω.

[0043] Furthermore, the first doped region has a surface concentration of 10 19 ~3×10 20 , the sheet resistance is 40 to 170 Ω, and preferably, the surface concentration of the first doped region is 1.5×10 19 , 3×10 19 , 4.5×10 19 , 6×10 19 , 7.5×10 19 , 9×10 19 , 1.05×10 20 , 1.2×10 20 , 1.35×10 20 , 1.5×10 20 , 1.65×10 20 , 1.8×10 20 , 1.95×10 20 , 2.1×10 20 , 2.25×10 20 , 2.4×10 20or 2.5×10 20 The sheet resistance may be, but is not limited to, 60Ω, 70Ω, 80Ω, 90Ω, 100Ω, 110Ω, 120Ω, 130Ω, 140Ω, or 150Ω.

[0044] Furthermore, in the first doped region, the diffusion temperature is 900 to 1100° C., and the diffusion time is 300 to 700 s.

[0045] Specifically, the diffusion temperature may be, but is not limited to, 900°C, 950°C, 1000°C, 1050°C, or 1100°C, and the diffusion time may be, but is not limited to, 300s, 350s, 400s, 450s, 500s, 550s, 600s, 650s, or 700s.

[0046] Furthermore, the method for removing the protective layer includes a step of performing a second cleaning process on the substrate including the first doped region. In a specific example, the conditions for the second cleaning process include cleaning for 150 to 350 seconds using a hydrofluoric acid solution having a mass percentage of 40% to 80%, and in one embodiment, the conditions for the second cleaning process include cleaning for 180 to 300 seconds using a hydrofluoric acid solution having a mass percentage of 50% to 70%.

[0047] Specifically, the mass percentage of hydrofluoric acid in the aqueous hydrofluoric acid solution may be, but is not limited to, 50%, 55%, 60%, 65% or 70%, and the cleaning time may be, but is not limited to, 180 s, 200 s, 220 s, 240 s, 260 s, 280 s or 300 s.

[0048] As can be seen, the cleaning can not only clean the protective layer, but also simultaneously clean the glass layer resulting from the production of the first doped region.

[0049] In a specific example, after manufacturing the passivation contact structure, the method further includes manufacturing a first passivation layer and a first anti-reflection layer laminated on the first surface, and manufacturing a second anti-reflection layer on the passivation contact structure.

[0050] Furthermore, the material of the first passivation layer may be, but is not limited to, one or more of aluminum and gallium oxide, and the material of the first anti-reflective layer and the material of the second anti-reflective layer are each independently selected from one or more of silicon nitride, a silicon oxynitride layer, and a silicon oxide layer.

[0051] Moreover, the passivation contact structure includes a tunnel oxide layer and a doped polysilicon layer stacked in sequence, with the tunnel oxide layer in contact with the substrate.

[0052] In a specific example, after manufacturing the first passivation layer, the first antireflective layer, and the second antireflective layer, the method further includes the steps of manufacturing a first electrode penetrating the first passivation layer and the first antireflective layer and connected to the first doped region, and manufacturing a second electrode penetrating the second antireflective layer and connected to the passivation contact structure.

[0053] In this application, different from the conventional process of passivated contact solar cells, a method of optimizing the first surface of the substrate for the cell structure to fabricate a localized first doped region is provided, which realizes local diffusion of the first doping source in the substrate, thereby avoiding the lattice loss on the front side of the solar cell, realizing a higher power conversion rate of the cell, ensuring the short circuit current and fill factor, reducing the loss of open circuit voltage caused by the front lattice distortion, and improving the conversion efficiency of the cell.

[0054] Referring to FIG. 3, the present application further provides a solar cell manufactured according to the above manufacturing method.

[0055] Referring to FIG. 3, there is further provided a power consuming device having the solar cell as a power source, and as can be understood, the power consuming device may include, but is not limited to, a transformer, a reactor, a capacitor, a composite device, a circuit breaker, a mutual inductor, a lightning arrester, a coupling capacitor, a power transmission line, a power cable, a grounding device, a generator, a capacitor, an electric motor, a sealed busbar, and a thyristor.

[0056] The solar cell and the manufacturing method thereof of the present application will be described in more detail below by providing specific examples. Unless otherwise specified, the raw materials related to the following specific embodiments may all be commercially available. EXAMPLES

[0057] In this embodiment, providing an N-type substrate; and performing a texture treatment on a first surface of the N-type substrate, the texture treatment being performed under conditions of a first texturing liquid containing, by mass percentage, 2.0% sodium hydroxide, 0.3% texturing additive, and 97.7% water, a texture treatment time of 550 seconds, and a texture treatment temperature of 85°C; Put the substrate into a phosphorus diffusion tube to grow a silicon oxide layer on both sides, setting the temperature at 900°C, the time at 5000 seconds, and the pressure at 1024 mbar to obtain a silicon oxide layer of 20 nm; A process of opening a window by a laser on a silicon wafer having an oxide layer grown thereon, and removing a part of a protective material layer on a predetermined first doped region, the process being performed with a laser rated power of 40W, a frequency of 900KHz, a light spot size of 30μm, and a virtual reality ratio of 0.3:0.5; A process of transferring the silicon wafer in which the window has been opened by the laser to a velvet manufacturing machine and performing a first cleaning, in which the cleaning solution has a mass percentage of sodium hydroxide of 5%, a mass percentage of a texturing additive of 1.4%, and a mass percentage of water of 93.6%, a reaction temperature of 75° C., a reaction time of 300 seconds, and the silicon wafer is cleaned with an HCl solution to remove residual alkaline cleaning solution; performing boron diffusion on the cleaned silicon wafer, the diffusion temperature being 1050° C., the diffusion time being 700 seconds, the surface concentration being 2.5e20, and the sheet resistance being controlled to 60Ω; A process of performing BSG and protective layer cleaning on the silicon wafer after boron diffusion and performing a second cleaning, the cleaning conditions including a 70% by mass HF aqueous solution and a time of 300 seconds; fabricating a passivation contact structure on a second surface of the N-type substrate; Producing aluminum as a first passivation layer and silicon nitride as a first anti-reflective layer on a first surface of an N-type substrate, and producing silicon nitride as a second anti-reflective layer on a second surface of the N-type substrate; fabricating, as a first electrode, a silver-aluminum electrode that penetrates the first passivation layer and the first anti-reflective layer and is connected to the first doped region, and fabricating, as a second electrode, a silver electrode that penetrates the second anti-reflective layer and is connected to the passivation contact structure. EXAMPLES

[0058] In this embodiment, providing an N-type substrate; and performing a texture treatment on a first surface of the N-type substrate, the texture treatment being performed under conditions of a first texturing liquid containing, by mass percentage, 0.6% sodium hydroxide, 1.0% texturing additive, and 98.4% water, a texture treatment time of 350 seconds, and a texture treatment temperature of 70°C; Put it into a phosphorus diffusion tube to grow a silicon oxide layer on both sides, setting the temperature at 500°C, the time at 1500 seconds, and the pressure at 600 mbar to obtain a silicon oxide layer of 5 nm; A process of opening a window by a laser on a silicon wafer having an oxide layer grown thereon, and removing a part of a protective material layer on a predetermined first doped region, the process being performed with a laser rated power of 20W, a frequency of 350KHz, a light spot size of 15μm, and a virtual reality ratio of 0.2:0.5; A process of transferring the silicon wafer in which the window has been opened by the laser to a velvet manufacturing machine and performing a first cleaning, in which the cleaning solution has a mass percentage of sodium hydroxide of 1.5%, a mass percentage of a texturing additive of 0.9%, and a mass percentage of water of 97.6%, a reaction temperature of 65°C, a reaction time of 200 seconds, and a process of cleaning with an HCl solution to remove residual alkaline cleaning solution; performing boron diffusion on the cleaned silicon wafer, the diffusion temperature being 950° C., the diffusion time being 300 seconds, the surface concentration being 1.5e19, and the sheet resistance being controlled to 150 Ω; A process of performing BSG and protective layer cleaning on the silicon wafer after boron diffusion and performing a second cleaning, the cleaning conditions including a 50% by mass HF aqueous solution and a time of 180 seconds; fabricating a passivation contact structure on a second surface of the N-type substrate; Producing aluminum as a first passivation layer and silicon nitride as a first anti-reflective layer on a first surface of an N-type substrate, and producing silicon nitride as a second anti-reflective layer on a second surface of the N-type substrate; fabricating, as a first electrode, a silver-aluminum electrode that penetrates the first passivation layer and the first anti-reflective layer and is connected to the first doped region, and fabricating, as a second electrode, a silver electrode that penetrates the second anti-reflective layer and is connected to the passivation contact structure. EXAMPLES

[0059] In this embodiment, providing an N-type substrate; and performing a texture treatment on a first surface of the N-type substrate, the texture treatment being performed under conditions of a first texturing liquid containing, by mass percentage, 1.4% sodium hydroxide, 0.4% texturing additive, and 98.2% water, a texture treatment time of 450 seconds, and a texture treatment temperature of 80°C; Put it in a phosphorus diffusion tube to grow a silicon oxide layer on both sides, setting the temperature at 700°C, the time at 3000 seconds, and the pressure at 800 mbar to obtain a silicon oxide layer of 12 nm; A process of opening a window by a laser on a silicon wafer having an oxide layer grown thereon, and removing a part of a protective material layer on a predetermined first doped region, the process being performed with a laser rated power of 20W, a frequency of 350KHz, a light spot size of 20μm, and a virtual reality ratio of 0.4:0.5; A process of transferring the silicon wafer in which the window has been opened by the laser to a velvet manufacturing machine and performing a first cleaning, in which the cleaning solution contains 3% by weight of sodium hydroxide, 1.1% by weight of texturing additive, and 95.9% by weight of water, the reaction temperature is 72°C, the reaction time is 250 seconds, and the silicon wafer is cleaned with an HCl solution to remove residual alkaline cleaning solution; performing boron diffusion on the cleaned silicon wafer, the diffusion temperature being 1050° C., the diffusion time being 500 seconds, the surface concentration being 7e19, and the sheet resistance being controlled to 100 Ω; A process of performing BSG and protective layer cleaning on the silicon wafer after boron diffusion and performing a second cleaning, the cleaning conditions including a 60% by mass HF aqueous solution and a time of 240 seconds; fabricating a passivation contact structure on a second surface of the N-type substrate; Producing aluminum as a first passivation layer and silicon nitride as a first anti-reflective layer on a first surface of an N-type substrate, and producing silicon nitride as a second anti-reflective layer on a second surface of the N-type substrate; fabricating, as a first electrode, a silver-aluminum electrode that penetrates the first passivation layer and the first anti-reflective layer and is connected to the first doped region, and fabricating, as a second electrode, a silver electrode that penetrates the second anti-reflective layer and is connected to the passivation contact structure.

[0060] <Comparative Example 1> In this comparative example, providing an N-type substrate; and performing a texture treatment on a first surface of the N-type substrate, the texture treatment being performed under conditions of a first texturing liquid containing, by mass percentage, 2.0% sodium hydroxide, 0.3% additive, and 97.7% water, a texture treatment time of 550 seconds, and a texture treatment temperature of 85°C; A step of performing boron diffusion on a silicon wafer, the diffusion temperature being 1050° C., the diffusion time being 700 seconds, the surface concentration being 2.5e20, and the sheet resistance being controlled to 60Ω; A process of performing BSG cleaning on the silicon wafer after boron diffusion, the cleaning conditions including a 70% by mass HF aqueous solution and a time of 300 seconds; fabricating a passivation contact structure on a second surface of the N-type substrate; Producing aluminum as a first passivation layer and silicon nitride as a first anti-reflective layer on a first surface of an N-type substrate, and producing silicon nitride as a second anti-reflective layer on a second surface of the N-type substrate; fabricating, as a first electrode, a silver-aluminum electrode that penetrates the first passivation layer and the first anti-reflective layer and is connected to the first doped region, and fabricating, as a second electrode, a silver electrode that penetrates the second anti-reflective layer and is connected to the passivation contact structure.

[0061] <Comparative Example 2> In this comparative example, providing an N-type substrate; and performing a texture treatment on a first surface of the N-type substrate, the texture treatment being performed under conditions of a first texturing liquid containing, by mass percentage, 0.6% sodium hydroxide, 1.0% additive, and 98.4% water, a texture treatment time of 350 seconds, and a texture treatment temperature of 70°C; A step of performing boron diffusion on a silicon wafer, the diffusion temperature being 950° C., the diffusion time being 300 seconds, the surface concentration being 1.5e19, and the sheet resistance being controlled to 150Ω; A process of performing BSG cleaning on the silicon wafer after boron diffusion, the cleaning conditions including a 50% HF aqueous solution by mass percent and a time of 180 seconds; fabricating a passivation contact structure on a second surface of the N-type substrate; Producing aluminum as a first passivation layer and silicon nitride as a first anti-reflective layer on a first surface of an N-type substrate, and producing silicon nitride as a second anti-reflective layer on a second surface of the N-type substrate; fabricating, as a first electrode, a silver-aluminum electrode that penetrates the first passivation layer and the first anti-reflective layer and is connected to the first doped region, and fabricating, as a second electrode, a silver electrode that penetrates the second anti-reflective layer and is connected to the passivation contact structure.

[0062] <Comparative Example 3> In this comparative example, providing an N-type substrate; and performing a texture treatment on a first surface of the N-type substrate, the texture treatment being performed under conditions of a first texturing liquid containing, by mass percentage, 1.2% sodium hydroxide, 0.5% texturing additive, and 98.2% water, a texture treatment time of 450 seconds, and a texture treatment temperature of 80°C; Put it in a phosphorus diffusion tube to grow a silicon oxide layer on both sides, setting the temperature at 700°C, the time at 3000 seconds, and the pressure at 800 mbar to obtain a silicon oxide layer of 12 nm; A process of opening a window by a laser on a silicon wafer having an oxide layer grown thereon, and removing a part of a protective material layer on a predetermined first doped region, the process being performed with a laser rated power of 20W, a frequency of 350KHz, a light spot size of 40μm, and a virtual reality ratio of 0.4:0.5; A process of transferring the silicon wafer with the laser window opening to a velvet manufacturing machine, in which the cleaning solution has a mass percentage of sodium hydroxide of 3%, a mass percentage of texturing additive of 1.1%, and a mass percentage of water of 95.9%, a reaction temperature of 72°C, a reaction time of 250 seconds, and a process of cleaning with an HCl solution to remove residual alkaline cleaning solution; performing boron diffusion on the cleaned silicon wafer, the diffusion temperature being 1050° C., the diffusion time being 500 seconds, the surface concentration being 7e19, and the sheet resistance being controlled to 100 Ω; A process for performing BSG and protective layer cleaning on the silicon wafer after boron diffusion, the cleaning conditions including a 60% HF aqueous solution by mass percent and a time of 240 seconds; fabricating a passivation contact structure on a second surface of the N-type substrate; Producing aluminum as a first passivation layer and silicon nitride as a first anti-reflective layer on a first surface of an N-type substrate, and producing silicon nitride as a second anti-reflective layer on a second surface of the N-type substrate; fabricating, as a first electrode, a silver-aluminum electrode that penetrates the first passivation layer and the first anti-reflective layer and is connected to the first doped region, and fabricating, as a second electrode, a silver electrode that penetrates the second anti-reflective layer and is connected to the passivation contact structure.

[0063] As shown in Fig. 1, the solar cell 10 structure provided in the embodiment includes a substrate 100, which includes a first doped region 103 formed on one side thereof, and a passivation contact structure 110 and a second anti-reflection layer 140 formed on one surface of the substrate 100 away from the first doped region 103, the passivation contact structure 110 includes a tunnel oxide layer 1101, a doped polysilicon layer 1102, a first passivation layer 120 and a first anti-reflection layer 130 formed on the other surface of the substrate 100, a first electrode 150 contacts the first doped region 103 of the substrate 100, and a second electrode 160 contacts the doped polysilicon layer 1102. As shown in Fig. 2, a plan view of the first surface 101 before the passivation contact structure 110 is manufactured is shown, in which Fig. 2(a) shows the first doped region 103 having a suede structure, and Fig. 2(b) shows the first surface 101 having a suede structure. After three batch experiments, the efficiency (Eta), short circuit current (Isc), open circuit voltage (Uoc) and fill factor (FF) of the final product battery cell of silicon wafer were tracked, see Table 1 below. JPEG2025054186000002.jpg53170

[0064] Referring to Table 1, the efficiency Eta of the embodiment is improved by 0.01 to 0.08 compared to the comparative example, and the main gain is improved by about 1.6 to 2.1 mV due to Uoc, but the fill factor FF is reduced by 0.06. In the present application, the method of optimizing the first surface of the substrate for the cell structure to manufacture a localized first doped region realizes local diffusion of the first doping source in the substrate, thereby avoiding lattice loss on the front surface of the solar cell, realizing a higher power conversion rate of the cell, ensuring the short circuit current and fill factor, reducing the loss of open circuit voltage due to front lattice distortion, and improving the conversion efficiency of the cell.

[0065] The technical features of the above embodiments can be combined in any combination, and for the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, any combination should be considered to be within the scope described in this specification.

[0066] The above examples only show some embodiments of the present application, so as to facilitate a concrete and detailed understanding of the technical solution of the present application, but should not be understood as limiting the scope of patent protection. It should be noted that those skilled in the art can make some further modifications and improvements without departing from the idea of ​​the present application, all of which are within the scope of protection of the present application. Those skilled in the art should understand that the technical solutions obtained through logical analysis, reasoning, or limited experiments based on the technical solution provided by the present application are included in the scope of the appended claims of the present application. Therefore, the scope of protection of the present patent application should be based on the scope of the appended claims, and the specification is used to explain the content of the claims. [Explanation of symbols]

[0067] 10. Solar Cells 100 Substrates 1101 Tunnel oxide layer 1102 doped polysilicon layer 110 Passivated contact structure 120 1st passivation layer 130 1st anti-reflection layer 140 Second anti-reflection layer 150 1st electrode 160 2nd electrode 101 1st surface 102 Second surface 103 First doped region 20 Power consumption equipment

Claims

1. providing a substrate having a first surface and a second surface opposite the first surface; forming a protective material layer on the first surface and removing a portion of the protective material layer on the predetermined first doped region to produce a protective layer; performing a first doping on the substrate along the first predetermined doped region to produce a substrate including a first doped region, the first doped region having a width of 10-35 μm; removing the protective layer and fabricating a passivated contact structure on the second surface. A method for producing a solar cell comprising the steps of:

2. The method further includes texturing the substrate prior to forming the protective material layer. The method according to claim 1 .

3. The method further includes a step of performing a first cleaning process on the substrate including the protective layer after the protective layer is formed and before the substrate including the first doped region is formed; The conditions for the first cleaning process are as follows: the cleaning solution used in the first cleaning process contains, by mass percentage, 1% to 6% of a monobasic base, 0.5% to 2% of a texturing additive, and 93% to 98.5% of a first solvent; The duration of the first cleaning process is 150 to 350 seconds. The temperature for the first cleaning process is 60 to 80° C. The method according to claim 1 .

4. The material of the protective layer includes one or more of silicon oxide, silicon nitride, and photosensitive adhesive. The method according to claim 1 .

5. The method for removing the protective layer includes performing a second cleaning process on the substrate including the first doped region, The second cleaning treatment conditions include cleaning for 150 to 350 seconds using a hydrofluoric acid solution having a mass percentage of 40 to 80%. The method according to claim 1 .

6. The first doped region has a surface concentration of 10 １９ ~3×10 ２０ , the sheet resistance is 40 to 170 Ω The method according to claim 1 .

7. After the passivation contact structure is manufactured, the method further includes the steps of manufacturing a first passivation layer and a first anti-reflection layer laminated on the first surface, and manufacturing a second anti-reflection layer on the passivation contact structure. The method according to any one of claims 1 to 6.

8. After the first passivation layer, the first anti-reflective layer, and the second anti-reflective layer are fabricated, a first electrode is fabricated through the first passivation layer and the first anti-reflective layer and connected to the first doped region, and a second electrode is fabricated through the second anti-reflective layer and connected to the passivation contact structure. The method according to claim 7 .

9. A solar cell comprising: Produced according to the production method of claim 8. A solar cell characterized by:

10. 1. A power consuming device, comprising: The solar cell according to claim 9 is provided as a power source.

1. A power consuming device comprising:

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